Gas transmission systems, gas supply equipment and gas transmission methods

Abstract

This invention discloses a gas transport system, a gas supply device, and a gas transport method. The gas transport system includes: a gas filling tank, with an inlet at its upper end connected to a gas source buffer tank and an outlet at its lower end connected to a reaction chamber; and a diffuser assembly disposed within the gas filling tank and rotated via a rotating shaft. The diffuser assembly includes a rotating body and a plurality of radially extending first blades on its upper surface, the width of the gas flow channel between each first blade increasing with its distance from the rotating shaft. This invention enables the continuous high-pressure ejection of gas from the gas filling tank during the deposition process, thereby adapting to the requirements of high aspect ratio trench coating and improving the thin film deposition quality.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor manufacturing, and specifically to a gas transport system, a gas supply device, and a gas transport method. Background Technology

[0002] In the gas delivery system of a thin film deposition equipment, multiple process gases need to be mixed and introduced into the reaction chamber for thin film deposition. Simultaneously, to meet the film quality requirements of high aspect ratio processes, a gas filling tank can be added at the front end of the reaction chamber to pressurize the process gases, allowing them to be ejected at high pressure and rapidly, filling the high aspect ratio trenches on the wafer surface to complete the coating.

[0003] However, during the deposition process within the reaction chamber, the pressure inside the filling tank drops and fluctuates as the process gas rapidly flows out. This prevents the gas from being injected into the reaction chamber at a constant high pressure, ultimately leading to defects in the thin film formed on the wafer surface or particulate contamination.

[0004] In order to solve the above-mentioned problems in the prior art, there is an urgent need in the field for a gas transport technology that can maintain the continuous high-pressure ejection of gas in the gas filling tank during the deposition process, so as to adapt to the requirements of high aspect ratio trench coating and improve the film deposition quality. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the prior art, the present invention provides a gas transmission system, a gas supply device, and a gas transmission method, which can maintain a continuous high-pressure ejection of gas from the gas filling tank during the deposition process, thereby adapting to the requirements of high aspect ratio trench coating and improving the quality of thin film deposition.

[0007] Specifically, the gas transmission system provided according to the first aspect of the present invention includes: an inflation tank, wherein an air inlet at its upper end is connected to a gas source buffer tank and an air outlet at its lower end is connected to a reaction chamber; and a diffuser assembly disposed within the inflation tank and driven to rotate via a rotating shaft, wherein the diffuser assembly includes a rotating body and a plurality of first blades extending radially on its upper surface, the width of the gas flow channel between each of the first blades increasing with the increase of its distance from the rotating shaft.

[0008] Furthermore, in some embodiments of the present invention, the pressure value of the outlet in the gas tank is positively correlated with the edge width of the gas flow channel between each of the first blades.

[0009] Furthermore, in some embodiments of the present invention, the gas transmission system includes a plurality of said diffuser components, which are longitudinally distributed to pressurize the gas flowing from the inlet to the outlet in stages.

[0010] Furthermore, in some embodiments of the present invention, the width of the first edge of the gas flow channel between each of the first blades in the lower diffuser assembly is greater than the width of the second edge of the gas flow channel between each of the first blades in the upper diffuser assembly.

[0011] Furthermore, in some embodiments of the present invention, second blades are circumferentially distributed on the side of the rotating body to help constrain the airflow direction toward the edge of the upper surface.

[0012] Furthermore, in some embodiments of the present invention, the gas transmission system further includes: a gas mixing assembly distributed above and / or below the diffuser assembly, the gas mixing assembly including multiple third blades, which are driven to rotate via the rotating shaft.

[0013] Furthermore, in some embodiments of the present invention, the first blade and / or the second blade and / or the third blade distributed circumferentially on the side of the rotating body are provided with heating wires.

[0014] Furthermore, in some embodiments of the present invention, the gas transmission system further includes: a pressure gauge located at the gas outlet to detect the pressure value of the gas outlet; and a controller configured to: adjust the rotational speed of the rotating shaft according to the pressure value of the gas outlet so as to ensure constant pressure output of gas from the gas outlet.

[0015] Furthermore, the gas supply device provided according to the second aspect of the present invention includes: at least one gas source buffer tank for providing process gas; and the gas transmission system provided according to the second aspect of the present invention, wherein the gas inlet is connected to the gas source buffer tank and the gas outlet is connected to the reaction chamber to transmit the process gas to the reaction chamber for deposition process.

[0016] Furthermore, in some embodiments of the present invention, the gas source buffer tank further includes a cleaning gas buffer tank, which provides cleaning gas to the gas filling tank in the gas transmission system for tank cleaning after the deposition process is completed in the reaction chamber.

[0017] Furthermore, the gas transmission method provided by the third aspect of the present invention, implemented via the gas supply device provided by the second aspect of the present invention, includes the following steps: supplying process gas to the gas filling tank of the gas transmission system; obtaining the pressure value of the gas outlet of the gas filling tank; and adjusting the rotational speed of the rotating shaft according to the pressure value of the gas outlet so that the gas at the gas outlet is output at a constant pressure. Attached Figure Description

[0018] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0019] Figure 1 A schematic diagram of a gas supply device according to some embodiments of the present invention is shown.

[0020] Figure 2 A schematic diagram of a gas transmission system provided according to some embodiments of the present invention is shown.

[0021] Figure 3 A schematic diagram of the structure of a diffuser assembly provided according to some embodiments of the present invention is shown.

[0022] Figure 4 A schematic diagram of the structure of a gas transmission system provided according to other embodiments of the present invention is shown.

[0023] Figure 5 A schematic diagram of the structure of a gas mixing assembly provided according to some embodiments of the present invention is shown.

[0024] Figure 6A A schematic diagram of the structure of a blade heating wire provided according to some embodiments of the present invention is shown.

[0025] Figure 6B A schematic diagram of the structure of a blade heating wire provided according to other embodiments of the present invention is shown.

[0026] Figure 7 A flowchart of a gas transport method provided according to some embodiments of the present invention is shown.

[0027] Figure 8 A flowchart of a controller provided according to some embodiments of the present invention is shown.

[0028] Figure label: 100 Gas supply equipment; 110 Gas source buffer tank; 111 First gas source buffer tank; 112 Second gas source buffer tank; 113 Third gas source buffer tank; 200 Gas transmission system; 210 Air tank; 211 Air intake; 212 Air outlet; 220 diffuser assembly; 221 Rotating body; 222, 412, 422 First blade; 223 Gas flow channel; 224 Second blade; 225 air vent; 230° Rotation axis; 240 Mixing assembly; 241 Third blade; 250 motor; 410 First diffuser assembly; 411 First rotating body; 420 Second diffuser assembly; 421 Second rotating body; 610, 620 heating wires; S710~S730 steps; 260 controller; 261. Memory; 262 processor. Detailed Implementation

[0029] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0030] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0031] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0032] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0033] As described above, during the deposition process in the reaction chamber, the pressure inside the gas filling tank decreases and fluctuates as the process gas rapidly flows out. This prevents the gas output from the filling tank from being injected into the reaction chamber at a constant high pressure, ultimately causing defects in the thin film formed on the wafer surface or resulting in particulate contamination.

[0034] To address the aforementioned problems in the prior art, this invention provides a gas transmission system, a gas supply device, and a gas transmission method, which can maintain a continuous high-pressure ejection of gas from the gas filling tank during the deposition process, thereby adapting to the requirements of high aspect ratio trench coating and improving the quality of thin film deposition.

[0035] In some non-limiting embodiments, the gas transmission system provided in the first aspect of the present invention can be used to implement the gas transmission method provided in the second aspect of the present invention.

[0036] The working principle of the above-described gas transmission system will be described below with reference to some embodiments of gas supply equipment and gas transmission methods. Those skilled in the art will understand that these embodiments of gas supply equipment and gas transmission methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all operating methods or functions of the gas transmission system. Similarly, this gas transmission system is also only one non-limiting implementation provided by the present invention, and does not limit other functional components in these gas supply equipment or the implementing entities of each step in the gas transmission method.

[0037] Please refer to Figure 1 . Figure 1 A schematic diagram of a gas supply device according to some embodiments of the present invention is shown.

[0038] like Figure 1 As shown, in some embodiments of the present invention, the gas supply device 100 mainly includes at least one gas source buffer tank 110 and a gas transmission system 200. The gas source buffer tank 110 is used to supply process gas. The gas transmission system 200 is located at the end of the gas source buffer tank 110, with its inlet connected to the gas source buffer tank 110 and its outlet connected to the reaction chamber (not shown in the figures), to transmit process gas to the reaction chamber for deposition process.

[0039] like Figure 1 As shown, in some embodiments, the gas source buffer tank 110 may include multiple buffer tanks for different gases. The ends of each buffer tank are controlled by valves (e.g., pneumatic valves). For example, in a deposition process, the gas source buffer tank 110 may include a first gas source buffer tank 111 and a second gas source buffer tank 112. The first gas source buffer tank 111 is used to provide a gaseous precursor source as the reactant gas. The second gas source buffer tank 112 is used to provide a dilution gas to appropriately dilute the reactant gas. By diluting the reactant gas, the flow and diffusion state of the reactant gas in complex structures (e.g., high aspect ratio trenches) can be optimized, enhancing step coverage and thus improving the uniformity of thin film deposition.

[0040] Optionally, the gas source buffer tank 110 may also include multiple buffer tanks for various precursor sources. For example, in atomic layer deposition (ALD) processes, two or more precursors are typically alternately introduced to the wafer surface. The first gas source buffer tank 111 in the gas source buffer tank 110 provides a first gaseous precursor. The second gas source buffer tank 112 provides an inert gas, used as a dilution gas and carrier gas. The third gas source buffer tank 113 provides a second gaseous precursor. In a single ALD cycle, the valves corresponding to both the first gas source buffer tank 111 and the second gas source buffer tank 112 are opened, allowing the first gaseous precursor and inert gas to be introduced into the gas delivery system 200 for mixing and delivery to the reaction chamber, forming a first film layer on the wafer surface. Afterward, the valve of the first gas source buffer tank 111 is closed, allowing only inert gas to be introduced to purge the wafer, ensuring that the concentration of the first gaseous precursor in the reaction chamber drops to a safe level. Subsequently, the valves corresponding to the third gas source buffer tank 113 and the second gas source buffer tank 112 are opened, allowing the second gaseous precursor and inert gas to be introduced into the gas transmission system 200 for mixing and delivery to the reaction chamber. The second gaseous precursor reacts with the first membrane layer to form the target membrane layer.

[0041] Those skilled in the art will understand that the above-described method of using an inert gas as a dilution gas is merely a non-limiting embodiment of the present invention, intended to clearly demonstrate the main concept of the invention, and not to limit the scope of protection of the invention. The dilution gas is not limited to inert gases. In other embodiments, for example, in some metal-organic chemical vapor deposition (MOCVD) processes, hydrogen can be used as the dilution gas, and in some nitride thin film deposition processes, ammonia, etc., can be used.

[0042] Next, please refer to Figure 2 and Figure 3 . Figure 2 A schematic diagram of a gas transmission system provided according to some embodiments of the present invention is shown. Figure 3 A schematic diagram of the structure of a diffuser assembly provided according to some embodiments of the present invention is shown.

[0043] like Figure 2 As shown, in some embodiments, the gas transmission system 200 in the gas supply device 100 mainly includes a gas filling tank 210 and a diffuser assembly 220. The upper inlet 211 of the gas filling tank 210 is connected to the gas source buffer tank 110, and its lower outlet is connected to the reaction chamber. The diffuser assembly 220 is located inside the gas filling tank 210 and is driven to rotate via a rotating shaft 230. Figure 3It is understood that the diffuser assembly 220 includes a rotating body 221 and a plurality of first blades 222 extending radially on its upper surface. The rotating body 221 may be a disk-shaped rotating component. The width A of the gas flow channel 223 between each first blade 222 increases with the distance r from it to the rotation axis 230. In this embodiment, the diffuser assembly 220 is driven to rotate at high speed by the rotation axis 230, which radially throws the gas flowing axially toward the diffuser assembly 220 out. With the radial width variation of the gas flow channel 223 in the diffuser assembly 220, the flow rate of the process gas can be rapidly reduced, thereby increasing the pressure and ultimately compensating for the pressure loss at the outlet 212 of the filling tank 210.

[0044] Specifically, combined Figure 2 and Figure 3 As shown, when the process gas enters the gas filling tank 210 through the inlet 211, the process gas flows through the diffuser assembly 220. The rotating body 221 rotates at high speed driven by the rotating shaft 230. The process gas flowing axially towards the center of the diffuser assembly 220 gains radial kinetic energy under the action of centrifugal force and begins to flow from the center of the rotating body 221 to the edge. Through multiple radially extending first blades 222 on the upper surface of the rotating body 221, the process gas is constrained to flow within multiple gas flow channels 223, thereby preventing radial turbulence or backflow of the airflow on the surface of the rotating body 221.

[0045] Furthermore, as the process gas flows from the center to the edge of the rotating body 221, the width (i.e., the flow area) of the gas channel 223 expands rapidly with increasing radial distance. According to the continuity equation in fluid dynamics, the velocity of the process gas decreases rapidly. Specifically, for steady flow (i.e., the gas flow state does not change with time), the mass of gas flowing through any cross-section of the channel per unit time is constant. The formula for the continuity equation is:

[0046] in, The mass flow rate (kg / s) remains constant throughout the gas flow path. Gas density (kg / m³) 3 In this scenario, density changes are negligible and approximate as constant. The flow area of ​​the gas channel (m²) 2 ), which is the channel area perpendicular to the gas flow direction, i.e., the width of the gas flow channel. The velocity of the gas is denoted as ρ (m / s).

[0047] like Figure 3As shown, the circumferential length of the gas flow channel 223 increases linearly (or non-linearly) with increasing radial position r (distance from the rotation axis 230). Since the circumference is 2πr, the circumferential gap between the first blades 222 (i.e., the width of the gas flow channel) increases with increasing r. Based on this, the flow area... It increases rapidly with increasing radial position r. According to the continuity equation... , constant Approximately unchanged, therefore and Inversely proportional. That is, when the process gas flows from the center to the edge of the upper surface of the rotating body 221, As the flow rate increases rapidly, the radial velocity v of the gas will inevitably decrease rapidly.

[0048] Then, applying Bernoulli's principle, the kinetic energy of the process gas is converted into pressure energy. Specifically, for steady flow of an ideal fluid, the total energy (total pressure) along the same streamline remains constant. The simplified Bernoulli equation is:

[0049] in, The static pressure (Pa) is the gas pressure that needs to be increased. Dynamic pressure (Pa) is the kinetic energy generated by the macroscopic flow velocity of a gas. The total pressure (Pa) is the sum of static and dynamic pressures, representing the total energy of the gas. In the application scenario of this embodiment, the gas mainly flows radially with minimal height difference, and the potential energy term is negligible. Therefore, the core issue is the inverse relationship between static and dynamic pressures.

[0050] like Figure 3 As shown in the simplified Bernoulli equation above, when the process gas is in the central region of the first blade 222, the width (i.e., flow area) A1 of the gas flow channel is small, and the flow velocity v1 is high. At this time, the dynamic pressure... The static pressure P is relatively low. However, as the process gas flows towards the edge, the width of the gas channel increases to A2, and correspondingly, the flow velocity decreases to v2. Dynamic pressure The dynamic pressure decreases accordingly. However, the reduced dynamic pressure does not disappear but is converted into the static pressure P of the gas. Therefore, the static pressure p increases as the flow velocity v decreases. Through the aforementioned diffuser assembly 220, deceleration and pressurization can be efficiently achieved within the gas tank 210, thereby completing single-stage diffuser operation.

[0051] Furthermore, continue as Figure 2 and Figure 3As shown, combining the continuity equation and the simplified Bernoulli equation, since the radial velocity v of the process gas in the gas channel 223 is negatively correlated with the width A of the gas channel 223 (i.e., A↑, v↓), and the static pressure P of the outlet 212 is also negatively correlated with the radial velocity v of the process gas in the gas channel 223 (i.e., v↑, P↓), the pressure value of the outlet 212 in the filling tank 210 is positively correlated with the edge width A2 of the gas channel 223 between each first blade 222. In other words, if it is desired to increase the pressure value of the outlet 212 in the filling tank 210, the edge width A2 of the gas channel 223 between each first blade 222 on the upper surface of the rotating body 221 can be increased, thereby improving the diffusion capacity of the diffuser assembly 220.

[0052] like Figure 2 As shown, in some embodiments, second blades 224 may be circumferentially distributed on the side of the rotating body 221 to help constrain the airflow direction flowing towards the edge of the upper surface. The second blades 224 on the circumferential side of the rotating body 221 can improve the problem of backflow and turbulence of process gas at the outer edge of the rotating body 221, thereby ensuring smooth airflow out of the diffuser assembly 220 and into the next stage structure.

[0053] Next, please combine Figure 4 A shared understanding. Figure 4 A schematic diagram of the structure of a gas transmission system provided according to other embodiments of the present invention is shown.

[0054] like Figure 2 and Figure 4 As shown, in some embodiments, a plurality of air guide holes 225 may be provided in the central region of the rotating body 221. The mixed process gas of reaction gas and dilution gas flows axially downward through the air guide holes 225, thereby enabling axial and radial separation and rectification of the process gas flowing toward the upper surface of the rotating body 221. Figure 4 (As indicated by the arrow in the image), this helps to reduce intake turbulence. The air guide 225 can be circular, elliptical, oblong, or a combination of various shapes. No limitation is imposed here.

[0055] In some alternative embodiments, the gas delivery system 200 may include a plurality of diffuser assemblies 220. The plurality of diffuser assemblies 220 are longitudinally distributed to progressively pressurize the process gas flowing from the inlet 211 to the outlet 212. Exemplarily, in Figure 4In the illustrated embodiment, the plurality of diffuser assemblies 220 may further include a first diffuser assembly 410 and a second diffuser assembly 420. The first diffuser assembly 410 and the second diffuser assembly 420 are longitudinally distributed at different positions on the rotation axis 230. The first diffuser assembly 410 includes a first rotating body 411 and a plurality of first blades 412 extending radially on its upper surface, and the width of the gas flow channel between each first blade 412 increases with its distance from the rotation axis 230. Similarly, the second diffuser assembly 420 includes a second rotating body 421 and a plurality of first blades 422 extending radially on its upper surface, and the width of the gas flow channel between each first blade 422 increases with its distance from the rotation axis 230.

[0056] When the rotating shaft 230 rotates, assuming the pressure (i.e., static pressure) inside the gas tank 210 above the first diffuser assembly 410 is P1, after primary diffusion by the first diffuser assembly 410, the pressure flowing below the first diffuser assembly 410 increases to P2. Further, the process gas continues to flow into the second diffuser assembly 420. After secondary diffusion by the second diffuser assembly 420, the pressure flowing below the second diffuser assembly 420 can further increase to P3. In this embodiment, the number of diffuser assemblies 220 is not limited to the illustrated embodiment. Those skilled in the art can configure one or more diffuser assemblies 220 inside the gas tank 210 according to the pressure requirements of the outlet 212 in different scenarios, so that the pressure value at the outlet 212 reaches the target pressure value.

[0057] Continue as Figure 4 As shown, in some optional embodiments, the first edge width of the gas flow channel between each first blade in the lower diffuser assembly (e.g., the second diffuser assembly 420) may be equal to the second edge width of the gas flow channel between each first blade in the upper diffuser assembly (e.g., the first diffuser assembly 410), so that the pressure boost of the two adjacent diffuser assemblies is equal. Constant. In this embodiment, the diffusion capacity of each stage of the diffuser is consistent along the axial flow direction of the process gas, but the gas pressure in the gas filling tank 210 still shows a gradual increase from the inlet 211 to the outlet 212.

[0058] Alternatively, in some embodiments, to further improve the diffusion effect of each stage of the diffuser assembly to compensate for the outlet pressure at the outlet 212 of the gas tank 210, the first edge width of the gas flow channel between each first blade in the lower diffuser assembly (e.g., the second diffuser assembly 420) may be greater than the second edge width of the gas flow channel between each first blade in the upper diffuser assembly (e.g., the first diffuser assembly 410), so that the pressure increase amplitude of adjacent two stages of diffuser assemblies is greater than that of the first blade in the lower diffuser assembly (e.g., the first diffuser assembly 410). The diffusion capacity increases progressively. In this embodiment, along the axial flow direction of the process gas, the diffusion capacity of each diffuser component increases sequentially, meaning that the diffusion capacity of a lower-level diffuser component is greater than that of its upper-level diffuser component.

[0059] Next, combined Figure 5 A shared understanding. Figure 5 A schematic diagram of the structure of a gas mixing assembly provided according to some embodiments of the present invention is shown.

[0060] In some embodiments of the present invention, the deposition process may require multiple process gases to be mixed and introduced into the reaction chamber together. For example, the reaction gas and dilution gas may be mixed and then introduced into the reaction chamber together. However, the prior art lacks a gas delivery structure that can uniformly mix multiple process gases. Traditional gas delivery structures present the challenge of flow resistance adaptation. If the overall flow resistance is too high, it will weaken the real-time response capability of the process gas supply. If the flow resistance is too low, the gas flow rate will be too fast, resulting in insufficient mixing of the multi-component gases, thus failing to guarantee the filling process quality of high aspect ratio trenches such as those in molybdenum (Mo) materials.

[0061] In this regard, combined with Figure 1 , Figure 2 and Figure 5 As shown, to improve the uniformity of the mixing concentration of the process gas in the filling tank 210, the gas transmission system 200 may further include a mixing assembly 240. The mixing assembly 240 may be distributed above and / or below the diffuser assembly 220. The mixing assembly 240 includes multiple third blades 241 and is driven to rotate via a rotating shaft 230. For example, as... Figure 1 As shown, the gas mixing assembly 240 can be distributed at least above the diffuser assembly 220. During the deposition process, multiple gas molecules are first deflected by the high-speed rotating multiple third blades 241, thereby accelerating their mixing and integration, and ensuring uniform mixing of multiple process gases (e.g., reactant gas and dilution gas). The uniformly mixed process gases are then pressurized by the diffuser assembly 220, thereby outputting uniformly mixed process gases that meet the target pressure value to the reaction chamber. The aforementioned gas mixing assembly 240 not only improves the gas mixing efficiency but also enhances the uniformity of film thickness in the thin film deposition process, thereby improving film quality.

[0062] Furthermore, such as Figure 2 and Figure 4 As shown, in some embodiments, the mixing component 240 can alternate with the diffuser component 220 in a multi-stage arrangement to further improve the full mixing of various process gases, and compensate for the pressure loss at the outlet 212 of the gas filling tank 210 by gradually increasing the pressure so that it reaches the target pressure value.

[0063] Furthermore, in some optional embodiments, the third blades 241 in the gas mixing assembly 240 are arranged circumferentially, with their outer edges maintaining a 2-3 mm gap from the inner wall of the tank. The number of third blades 241 can be odd or even. In the gas mixing assembly 240, at least two third blades 241 can be provided in a single layer to improve its effect on changing the gas flow direction.

[0064] Further, optionally, multiple gas mixing components 240 can be distributed longitudinally at equal or unequal intervals along the rotation axis 230. The outer diameter of the third blade 241 of each layer of gas mixing components 240 can be increased or decreased step by step, or arranged irregularly. With the assistance of pressure regulation by the gas mixing components 240, the mixed process gas can be discharged uniformly and stably within a preset time.

[0065] Continue as Figure 2 and Figure 4 As shown, in some embodiments, the diffuser assembly 220 and the mixing assembly 240 can be coaxially driven via a rotating shaft 230, and both rotate at the same speed. Optionally, the rotation of the diffuser assembly 220 and the mixing assembly 240 can be driven by an external motor 250. The external motor 250 driving method has lower cost and design difficulty, and is suitable for applications where pressure fluctuations at the outlet 212 are not sensitive, but where there are certain requirements for the uniformity of gas and temperature within the tank. Optionally, depending on external space limitations and requirements, the motor 250 can also be located inside the filling tank 210.

[0066] Alternatively, the diffuser assembly 220 and the mixing assembly 240 can also be driven without a motor, but instead by the high-pressure gas filling the tank, which drives the third blade 241 of the mixing assembly 240 to rotate. The rotation of the third blade 241 then further drives the diffuser assembly 220 located below it to rotate. This gas-driven blade rotation method offers high control precision and stable gas output, making it suitable for applications requiring constant pressure and minimal fluctuations at the outlet 212.

[0067] Alternatively, in some embodiments, the rotational speeds of the diffuser assembly 220 and the mixing assembly 240 may differ. This can be adjusted based on the specific process formulation and the actual performance of the equipment.

[0068] Next, please refer to Figure 6A and Figure 6B . Figure 6A A schematic diagram of the structure of a blade heating wire provided according to some embodiments of the present invention is shown. Figure 6B A schematic diagram of the structure of a blade heating wire provided according to other embodiments of the present invention is shown.

[0069] Since some precursor sources are solid or liquid at room temperature, they need to be heated / vaporized and then transported to the reaction chamber in a gaseous state. For example, metallic precursor sources such as molybdenum, tungsten, and zirconium are solid at room temperature. Silicon-based precursor sources such as silicon tetrachloride and organometallic precursor sources such as trimethylaluminum are liquid at room temperature. To prevent condensation of these non-gaseous precursor sources during their flow through the gas filling tank 210, existing technologies typically use aluminum blocks or similar materials to encase and heat them. However, for large-volume gas filling tanks, it is difficult to ensure uniform temperature in the central internal region due to the heating temperature of the outer surface. Therefore, there is a risk of localized condensation of gaseous precursors within the tank, resulting in particles and affecting film quality.

[0070] In some embodiments, heating wires may be provided within the first blade 222 and / or the second blade 224 of the diffuser assembly 220, and / or the third blade 241 of the mixing assembly 240. The heating wires may be embedded. Figure 6A As shown, taking the third blade 241 as an example, the heating wires 610 can be arranged in a fan shape along the blade. Figure 6B As shown, taking the third blade 241 as an example, the heating wires 620 can be arranged radially.

[0071] Furthermore, by continuously heating the heating wires arranged within the first blade 222, the second blade 224, and the third blade 241 simultaneously, the temperature within the filling tank 210 can be made uniform and stable. At this time, the partially vaporized liquid or solid precursor particles in the filling tank 210 are fully vaporized upon impacting the surface of the rapidly heated first blade 222, the second blade 224, or the third blade 241, thereby improving the filling efficiency of the high aspect ratio trenches by the process gas subsequently transported to the reaction chamber. In this embodiment, the high-speed rotating heating blades not only maintain a uniform and stable temperature within the filling tank 210 but also fully vaporize the partially vaporized liquid and solid precursor particles in contact with the blade surface, thereby improving the utilization rate of the reaction source and the film formation quality.

[0072] Furthermore, in some embodiments, the first blade 222 and / or the second blade 224 and / or the third blade 241 may be made of materials such as Hastelloy, nickel-chromium alloy, or aluminum alloy, which are resistant to corrosive elements such as Cl, F, and O. Alternatively, the corrosion resistance of the blades can be improved by plating the surfaces of the first blade 222 and / or the second blade 224 and / or the third blade 241 with nickel, an inorganic coating made by ALD process, or anodizing. This extends the service life of the blades inside the filling tank 210, reduces contamination, and ensures the cleanliness of the output gas.

[0073] Furthermore, returning to Figure 2As shown, in some embodiments of the present invention, the gas transmission system 200 may further include a pressure gauge and a controller. The pressure gauge may be located at the outlet 212 to detect the pressure value at the outlet 212. The controller is configured to adjust the rotational speed of the rotating shaft 230 according to the pressure value at the outlet 212, so that the gas output at the outlet 212 is at a constant pressure.

[0074] Specifically, it can be combined with Figure 7 A shared understanding. Figure 7 A flowchart of a gas transport method provided according to some embodiments of the present invention is shown.

[0075] like Figure 7 As shown, in some embodiments, the gas transport method may include steps S710 to S730.

[0076] Step S710 involves supplying process gas into the filling tank of the gas transfer system.

[0077] Combination Figures 1-3 As shown, in some embodiments, during the deposition process, multiple process gases are simultaneously or sequentially introduced into the filling tank 210 via the raw material supply pipeline through multiple gas source buffer tanks 110 and pressurized through the inlet 211. For example, the multiple process gases may include gaseous precursor sources (i.e., reactant gases) and dilution gases. At this time, the multiple third blades 241 of the mixing assembly 240 located in the filling tank 210 can be rotated by the motor 250. The gas molecules of the multiple process gases are changed by the high-speed rotating third blades 241, thereby helping to accelerate mixing and make the multiple process gases uniformly mixed. The uniformly mixed process gases are pressurized by the diffuser assembly 220.

[0078] like Figure 2 and Figure 4 As shown, the mixing component 240 can alternate with the diffuser component 220 in a multi-stage arrangement, thereby ensuring that various process gases are fully mixed and pressurized step by step.

[0079] Next, steps S720 and S730 can be executed. Step S720 involves obtaining the pressure value at the outlet of the gas filling tank. Step S730 involves adjusting the rotational speed of the rotating shaft according to the pressure value at the outlet to ensure a constant pressure output of gas from the outlet.

[0080] Specifically, combined Figure 2 and Figure 3It is understood that, in some embodiments, during the execution of steps S720 and S730, the operator can preset the target pressure value of the outlet 212 in the controller. This target pressure value can be determined based on the target injection velocity of the process gas entering the reaction chamber, or the target injection velocity entering the high aspect ratio trench. Assuming the target pressure value of the outlet 212 is P... target Under ideal conditions, the gas flow rate continuously introduced into the tank is Q. The rotational speed of the rotating shaft 230 driven by motor 250 is m. The target pressure value is P. target There is a certain relationship between the gas flow rate Q and the rotational speed m. In actual conditions, the pressure at the outlet 212 will fluctuate to some extent.

[0081] To address this, during the deposition process, the process gas is supplied to the reaction chamber via the gas supply device 100, and the real-time pressure value P at the outlet 212 of the gas filling tank 210 is collected by a pressure gauge. real If the pressure gauge detects the real-time pressure value P at outlet 212... real Less than the target pressure value P target At this time, in order to ensure that the pressure of the output process gas is stable at P target The controller can control motor 250 to increase the rotational speed of rotating shaft 230 from m to m1. If the pressure gauge detects the real-time pressure value P at outlet 212... real Greater than the target pressure value P target The controller can control the motor 250 to reduce the rotational speed of the rotating shaft 230 from m to m2. In this embodiment, the pressure value P is determined by a pressure gauge at the outlet 212 based on the real-time pressure value. real The motor speed is adjusted in the reverse direction at 250, which in turn adjusts the rotational shaft speed at 230 to keep the pressure at the outlet 212 stable, so that the process gas can be continuously ejected at a constant pressure and high speed.

[0082] In addition, such as Figure 1 and Figure 2 As shown, in some embodiments of the present invention, the gas source buffer tank 110 in the gas supply device 100 may further include a cleaning gas buffer tank. After the deposition process is completed in the reaction chamber, cleaning gas is supplied to the filling tank 210 through the cleaning gas buffer tank to clean the tank. In the prior art, the air inlet 211 and / or air outlet 212 of the filling tank 210 are generally located at the bottom or top of one side of the tank. Therefore, during the cleaning and purging process inside the tank, due to the excessively fast gas flow, it is difficult to clean thoroughly. Residual process gas flowing into the reaction chamber will react and generate particles, thereby affecting the cleanliness of the equipment and the yield of subsequent products.

[0083] In this embodiment, when the reaction source (including precursor source and / or reactant gas) in the reaction chamber is filled and the gas filling tank 210 is purged, the cleaning gas, driven by the multiple third blades 241 of the high-speed rotating mixing component 240, exhibits highly active gas molecules with extremely irregular movement directions, thus rapidly changing the flow direction of the cleaning gas. The cleaning gas can thoroughly purge every corner of the entire gas filling tank 210 (including dead zones), thereby shortening the purging time of the tank and improving the cleaning efficiency of the gas filling tank 210.

[0084] Next, please refer to Figure 8 . Figure 8 A flowchart of a controller provided according to some embodiments of the present invention is shown.

[0085] like Figure 8 As shown, in some embodiments, the controller 260 in the gas transmission system 200 may include a memory 261 and a processor 262.

[0086] Specifically, in some non-limiting embodiments, a computer-readable storage medium may store a computer program product thereon. This computer program product includes computer instructions. A processor 262 is connected to the memory 261 and can be configured to execute the computer instructions included in the computer program product to implement the gas transport method provided in the third aspect of the invention.

[0087] In summary, the present invention provides a gas transmission system, a gas supply device, and a gas transmission method, which can maintain a continuous high-pressure ejection of gas from the gas filling tank during the deposition process, thereby adapting to the requirements of high aspect ratio trench coating and improving the quality of thin film deposition.

[0088] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0089] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly illustrate this interchangeability between hardware and software, the various illustrative components, blocks, modules, circuits, and steps are described above in a generalized manner in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the invention.

[0090] The various illustrative logic modules and circuits described in conjunction with the embodiments disclosed herein may be implemented or performed using a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. The general-purpose processor may be a microprocessor, but in alternatives, it may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors cooperating with a DSP core, or any other such configuration.

[0091] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor such that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0092] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0093] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas transmission system, characterized in that, include: An air filling tank, with its upper air inlet connected to an air source buffer tank and its lower air outlet connected to a reaction chamber; and A diffuser assembly is disposed inside the gas tank and rotated via a rotating shaft. The diffuser assembly includes a rotating body and a plurality of first blades extending radially on its upper surface. The width of the gas flow channel between each first blade increases with the increase of its distance from the rotating shaft.

2. The gas transmission system as described in claim 1, characterized in that, The pressure value at the outlet of the gas tank is positively correlated with the edge width of the gas flow channel between each of the first blades.

3. The gas transmission system as described in claim 1, characterized in that, It includes multiple diffuser components, which are longitudinally distributed to progressively pressurize the gas flowing from the inlet to the outlet.

4. The gas transmission system as described in claim 3, characterized in that, The width of the first edge of the gas flow channel between each of the first blades in the lower diffuser assembly is greater than the width of the second edge of the gas flow channel between each of the first blades in the upper diffuser assembly.

5. The gas transmission system as described in claim 1, characterized in that, The rotating body has second blades distributed circumferentially on its side to help constrain the airflow direction toward the edge of the upper surface.

6. The gas transmission system as described in claim 1, characterized in that, Also includes: A mixing assembly is distributed above and / or below the diffuser assembly, the mixing assembly including multiple third blades, which are driven to rotate via the rotating shaft.

7. The gas transmission system as described in claim 6, characterized in that, Heating wires are provided in the first blade and / or the second blade and / or the third blade distributed circumferentially on the side of the rotating body.

8. The gas transmission system as described in claim 1, characterized in that, Also includes: A pressure gauge is installed at the air outlet to detect the pressure value at the air outlet. as well as The controller is configured to adjust the rotational speed of the rotating shaft according to the pressure value of the outlet, so as to ensure that the gas output from the outlet is at a constant pressure.

9. A gas supply device, characterized in that, include: At least one gas source buffer tank is provided for supplying process gas; as well as The gas transmission system according to any one of claims 1 to 8 has its inlet connected to the gas source buffer tank and its outlet connected to the reaction chamber to transmit the process gas to the reaction chamber for deposition process.

10. The gas supply equipment as described in claim 9, characterized in that, The gas source buffer tank also includes a cleaning gas buffer tank, which provides cleaning gas to the gas filling tank in the gas transmission system for tank cleaning after the deposition process is completed in the reaction chamber.

11. A gas transport method, characterized in that, Implemented via the gas supply equipment as described in claim 9 or 10, the gas transmission method includes the following steps: Provide process gas into the filling tank of the gas transmission system; Obtain the pressure value at the outlet of the air tank; and The rotational speed of the rotating shaft is adjusted according to the pressure value at the outlet to ensure a constant pressure output of gas from the outlet.

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