A Multi-Mode High-Efficiency Super-Space Atomic Layer Deposition Vacuum Interconnect Integration Method

Abstract

This invention discloses a multi-mode, high-efficiency, super-space atomic layer deposition (ALD) vacuum interconnect integration method, relating to the field of atomic layer deposition (ALD). It aims to address the problems of limited functionality, low deposition rates, and high operating costs in existing ALD equipment. The technical solution involves dividing the equipment into multiple reaction chambers connected by transition chambers. Different reactant supply facilities are installed in the reaction chambers, and purging facilities are installed in the transition chambers. This invention allows samples to be transferred between different reaction chambers in different sequences, thereby altering the preparation process and enabling multi-mode preparation. Precursor isolation is achieved through transfer valves, providing excellent isolation, and purging is only required during sample transfer between chambers, significantly reducing operating costs. This invention balances rapid preparation with device fabrication, enabling low-cost R&D testing and facilitating rapid iteration of semiconductor technology.

Description

Technical Field

[0001] This invention relates to the field of atomic layer deposition technology, specifically to a multi-mode, high-efficiency, super-space atomic layer deposition vacuum interconnection integration method. Background Technology

[0002] Traditional atomic layer deposition (ALD) technology faces two major technical barriers and challenges: First, ALD technology has a long growth cycle and an extremely slow deposition rate. Because each cycle requires two thorough inert gas purging processes to obtain a single-layer lattice of 0.04-0.25 nm, it is difficult to deposit a 25 nm thick layer. Taking a time of approximately two hours as an example, this severely restricts research and development efficiency. Secondly, ALD equipment has a single function, and the cost of equipping multiple different devices with universities and other research institutions is extremely high. Using ALD equipment with a single function makes it difficult for research institutions to take advantage of the multi-mode growth and deposition capabilities of ALD. Moreover, the fabrication of functional devices requires multiple different processes. During the transfer between different processing positions, the functional devices need to be removed from the equipment and exposed to a cleanroom environment. Each transfer carries the risk of potential contamination, so purification and purging are required after each transfer, greatly increasing research costs. Existing technologies for spatial ALD, developed to improve deposition rates, often use inert gas curtains to isolate precursors. Although this shortens purging time, the equipment structure is complex and the consumption of special gases is high, making it only suitable for large-scale industrial production and unsuitable for the low-cost requirements of university research. In addition, the research and development cycle of new semiconductor materials is long and the cost of trial and error is high. There is a lack of efficient and low-cost research and development platforms that integrate rapid deposition, device fabrication, and performance characterization, making it difficult to adapt to the rapid iteration of contemporary semiconductor technology. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to overcome the existing defects and provide a multi-mode, high-efficiency, super-space atomic layer deposition vacuum interconnect integration method, which can effectively solve the problems in the background technology.

[0004] To achieve the above objectives, this invention discloses a multi-mode, high-efficiency, super-space atomic layer deposition vacuum interconnection integration method. The technical solution adopted is to connect multiple reaction chambers with different built-in facilities through a transition chamber, and to set a transfer valve between the reaction chambers and the transition chambers to transfer the sample between the reaction chambers with different built-in facilities for the preparation of different ALD growth modes.

[0005] As a preferred embodiment of the present invention, the invention includes a preparation device and a sample stage. The preparation device comprises a transfer chamber and a reaction chamber, which are connected to a transition chamber via a transfer valve. The transfer chamber allows for the transfer of materials such as substrates to the transition chamber or the transfer of prepared samples out of the transition chamber. The sample stage is located within the reaction chamber. Multiple reaction chambers are provided within the preparation device, each containing an environmental control component and a reaction support component. An inert gas purging unit is provided in the transition chamber. A sample transfer component is included in the preparation device to transfer samples between the reaction chambers and the transition chambers. After the sample stage is loaded with a substrate, reactants are obtained in the reaction chambers. Different reaction chambers supply different reactants, which react on the substrate to form a thin film. This method eliminates the need to purchase multiple devices, reducing procurement costs. Furthermore, the preparation process is conducted in a closed system within the device, avoiding external contact and minimizing the risk of contamination, thus significantly reducing purification costs. This approach reduces research costs from multiple angles, from equipment to consumables.

[0006] The reaction chamber and the transition chamber can be arranged in various ways, including but not limited to linear arrangement and circular arrangement of the reaction chamber around the transition chamber.

[0007] As a preferred embodiment of the present invention, the number of reaction chambers is not less than the number of types of reaction precursors used, and each reaction chamber is connected to a different reaction precursor supply pipeline. During the preparation process, each chamber can be opened and closed independently through a transfer valve, thereby setting a different precursor atmosphere in the same chamber. This avoids the environmental pollution caused by switching precursors back and forth in the same chamber in traditional ALD, and ensures that the atmosphere in the same chamber is not disturbed. As a preferred technical solution of the present invention, the environment creation component includes a vacuum unit; when the upstream reaction chamber or transition chamber is sprayed with precursor or purged with inert gas, the downstream transition chamber or reaction chamber is simultaneously subjected to a preset vacuum operation. Compared with the traditional ALD, which can only be vacuumed after the precursor is sprayed or the inert gas is purged, the overall preparation time is greatly saved.

[0008] As a preferred embodiment of the present invention, the height of the transition chamber is no more than twice the thickness of the sample stage, thereby greatly reducing the inert gas loss caused by inert gas purging while improving the purging and vacuuming rates, and saving the overall preparation time.

[0009] As a preferred embodiment of the present invention, the sample stage has a heating unit that can heat the substrate for thermal deposition.

[0010] As a preferred embodiment of the present invention, it further includes an operating component located in the reaction chamber and / or the transition chamber.

[0011] As a preferred embodiment of the present invention, the operating components include at least one of a glove box, a robotic arm, and a sample trolley, wherein the sample trolley is located in the transfer chamber.

[0012] As a preferred embodiment of the present invention, it further includes a detection component, which is located in the reaction chamber and / or the transition chamber.

[0013] As a preferred embodiment of the present invention, the detection component is a residual gas detection unit. The residual gas detection unit can employ an in-situ mass spectrometer (QMS) to detect the signal of the adsorption reaction byproducts in the air in real time. When the byproduct signal decreases from its peak and tends to stabilize, it indicates that the reaction is complete. Considering that the adsorption reaction is extremely fast, the maximum precursor introduction time required to complete the adsorption can also be verified during process validation, and the reaction can be ensured to proceed fully by setting the time.

[0014] As a preferred embodiment of the present invention, the reaction protection component includes a raw material supply unit.

[0015] As a preferred embodiment of the present invention, the reaction protection component further includes a plasma source.

[0016] As a preferred technical solution of the present invention, it also includes a consultation module, which has a built-in AI large model. Through the AI ​​large model, the required parameters and precursors for the preparation process can be directly consulted, which facilitates the setting of parameters and preparation of precursors in the early stage of preparation.

[0017] Compared with existing technologies, the advantages of this invention are as follows: By setting up multiple reaction chambers with different facilities and connecting them through a transition chamber, this invention enables the transfer of samples between different reaction chambers in different sequences, thereby changing the preparation process and achieving multi-mode preparation. The precursor is isolated by a transfer valve, providing good isolation, and only requiring isolation purging during sample transfer between chambers, significantly reducing operating costs. This invention can balance rapid preparation and device fabrication, enabling low-cost R&D testing and facilitating rapid iteration of semiconductor technology. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the arrangement according to the first embodiment of the present invention; Figure 2 This is an electrical connection block diagram of the first embodiment of the present invention; Figure 3 This is a schematic diagram of the arrangement in the second embodiment of the present invention.

[0019] Among them, 1. First reaction chamber; 2. Second reaction chamber; 3. Third reaction chamber; 4. First transition chamber; 5. Second transition chamber. Detailed Implementation

[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] Example 1 like Figure 1 As shown, this invention discloses a multi-mode, high-efficiency, super-space atomic layer deposition vacuum interconnect integration method, and the technical solution adopted is as follows.

[0022] The equipment includes a main shell containing a control device with a microprocessor. The shell contains a first reaction chamber 1, a second reaction chamber 2, and a third reaction chamber 3. The first reaction chamber 1 and the second reaction chamber 2 are connected by a first transition chamber 4, and the second reaction chamber 2 and the third reaction chamber 3 are connected by a second transition chamber 5. Each transition chamber is equipped with a transfer valve at both ends, which can seal the transition chamber individually, connect it to one side of the reaction chamber individually, or connect it to both sides of the reaction chamber.

[0023] The first transition chamber 4 and the second transition chamber 5 are equipped with an inert gas purging mechanism and a vacuum pumping mechanism, which can realize gas replacement in the transition chamber and form a purging air curtain when the sample passes through.

[0024] Inside the outer shell is a sample stage that allows samples to be moved between the various reaction chambers and transition chambers.

[0025] The reaction chamber is connected to a precursor supply pipe and a vacuum pump, which can supply precursors to the reaction chamber. Different reaction chambers are connected to different precursor supply pipes, or the same reaction chamber is connected to different precursor supply pipes and vacuumed. All of these can deliver different precursors to the substrate, thereby providing conditions for spatial atomic layer deposition.

[0026] The reaction chamber and sample stage can be equipped with various condition initiation devices to provide different ALD deposition conditions, including but not limited to: A heating mechanism is installed on the sample stage to provide conditions for thermal atomic layer deposition; A plasma source is set up in the reaction chamber to enhance atomic layer deposition.

[0027] By transferring samples in different sequences between reaction chambers with different initiation devices, various ALD deposition modes can be combined to achieve multi-mode atomic layer deposition.

[0028] The parallel arrangement structure in this embodiment facilitates the operation of the system vacuum unit and gas path.

[0029] In order to guide the process design and parameter setting during the experiment, the control device is also equipped with a large AI model as a consultation module.

[0030] Example 2 like Figure 3 As shown, the difference between this embodiment and Embodiment 1 is that there is only one transition chamber, and reaction chambers equipped with different condition initiation devices are arranged in a ring array around the transition chamber, and an independent transmission valve is provided at the junction of the transition chamber and each reaction chamber.

[0031] The honeycomb arrangement in this embodiment relies on the sample stage rotating along the central axis to pass through the separated precursor gas chambers in sequence, which can bring convenience to multi-module design and expansion.

[0032] Example 3 like Figure 1 , Figure 2 As shown, this embodiment, based on Embodiment 1, includes fixed tracks in all three reaction chambers and transfer tracks in both transition chambers. The sample stage is positioned on both the fixed and transfer tracks and can move along them. For specific transfer methods, those skilled in the art can refer to Chinese Patent CN103290363B, "Integrated Device for Fabrication of Organic Thin Film Devices on Flexible Substrates," for technical inspiration. The movement of the sample stage is the same as the "slider" in existing patents. This structure enables sample turnover.

[0033] The sample stage is equipped with an electric heating wire, carbon brushes, and a rotating stage. The rotating stage is connected to the sample stage shaft, and the rotating stage gear set is connected to a rotary motor. The carbon brushes are connected to the electric heating wire and the rotary motor. Sliding contact lines are installed on the fixed track and the trolley track. The carbon brushes slide and make contact on the sliding contact lines. The sliding contact lines are electrically connected to an external control device. The heating wires generate heat to provide the necessary temperature environment for thermal atomic layer deposition. The rotary motor drives the rotating stage to rotate, causing the sample on the rotating stage to rotate and thus uniformly adsorb the precursor.

[0034] The first reaction chamber 1 is also connected to a first vacuum pump for creating a vacuum environment, a first precursor supply pipe for supplying the first precursor, and a QMS for detecting the composition of residual gas inside. The first precursor supply pipe is connected to the first precursor supply module, and a first control valve is installed at the front end of the first precursor supply pipe.

[0035] The first transition chamber 4 is connected to a first inert gas purging unit, a second vacuum pump, and a glove box. The inert gas blown out by the first inert gas purging unit enters the second vacuum pump to form a purging air curtain, which isolates the upper and lower precursors, forming airflow isolation and avoiding contamination.

[0036] The second reaction chamber 2 is equipped with a second precursor supply pipe, which connects the second precursor supply module and the first precursor supply module. A three-way valve is installed at the connection point, and a second control valve is installed at the front end of the second precursor supply pipe.

[0037] The second transition chamber 5 is connected to a second inert gas purging unit, a third vacuum pump, and a glove box. Inside, a sample trolley and a robotic arm are installed. The arrangement of the glove box and sample trolley can be referenced by those skilled in the art to Chinese Patent CN103290363B, "Integrated Device for Fabrication of Organic Thin Film Devices on Flexible Substrates," and Chinese Patent CN101838792A, "Vacuum Thermal Evaporation Equipment for Large-Area Thin Film Fabrication on Flexible Substrates." The robotic arm and its arrangement are existing technologies, such as the dual-axis ultra-high vacuum robotic arm (WSD) from Feimian Technology (Shanghai) Co., Ltd.

[0038] The third reaction chamber 3 is equipped with a plasma source and a third precursor supply pipe. The third precursor supply pipe is connected to the third precursor supply module. A third control valve is installed at the front end of the third precursor supply pipe, and a fourth control valve is installed on the plasma source.

[0039] In order to achieve physical isolation between adjacent compartments, transmission valves are installed at the hatches at both ends of the first transition compartment 4 and the second transition compartment 5. The transmission valves can be gate valves.

[0040] like Figure 2 As shown, in order to control the preparation process parameters, the following components are included: a transfer valve, a first inert gas purging unit, a second inert gas purging unit, a first control valve, a second control valve, a third control valve, a first vacuum pump, a second vacuum pump, a third vacuum pump, a sample carriage stepper motor, a robotic arm assembly, a sample stage electric heating wire, a fourth control valve, and a QMS electrical connection.

[0041] To guide the process design and parameter settings during the experiment, the control device also deploys a large AI model as a consultation module. The specific AI models selected are as follows: References: LLMs model: 1. Yanguas-Gil, A. et al. Benchmarking large language models for materials synthesis: the case of atomic layer deposition. Journal of Vacuum Science & Technology A 43, 032406 (2025). 2. Yanguas-Gil A, AI for ALD: Accelerating Process Development, Materials Discovery, and Scale up , ECS Meeting Abstracts, 2025. SevenNet model: Kang, S. et al. Evaluating Machine Learning Interatomic Potentials for Accurate and Scalable Modeling of Organometallic Precursors. ACS Appl. Mater. Interfaces 17, 57226–57239 (2025). CGformer model: CGformer: Transformer-enhanced crystal graph network with global attention for material property prediction, Matter, 2025. IDEAL model: Gu, B., Le, TN, Kim, W., Masroor, Z. & Lee, H.-B.-R. AI-drivenInverse Design of Complex Oxide Thin Films for Semiconductor Devices. Different model category selection windows are set on the human-computer interaction panel of the control device, and the corresponding large model is called by selecting the corresponding model category.

[0042] In this embodiment, the vacuum pump used is a VRD-4 type two-stage rotary vane vacuum pump with a pumping speed of 4m³ / s. 3 / h, the total volume of the reaction chamber and transition chamber of the preparation equipment is 50L.

[0043] This embodiment can realize spatial atomic layer deposition (S-ALD), plasma-enhanced atomic layer deposition (PE-ALD), and thermal atomic layer deposition (Thermal ALD).

[0044] S-ALD (alumina film as an example): Step 1, Pre-processing Open all transfer valves and start all vacuum pumps for 8 minutes to evacuate the preparation equipment and remove residual reactants, water, oxygen, etc. After the set vacuum pump running time, stop the vacuum pumps and close all transfer valves. Under clean environment conditions, transfer the substrate material from the transfer chamber (after the sample is placed in, the negative pressure is evacuated to no more than 10 mPa) to the second transition chamber 5. Place the substrate material on the sample trolley through the glove box, start the sample trolley stepper motor and robotic arm assembly, and transfer the substrate material to the rotating stage of the sample stage. During the transfer of the sample stage, start the inert gas purging unit and vacuum pump (currently the second inert gas purging unit and the third vacuum pump) of the current transition chamber or the transition chamber to be transferred to, to purge the surface of the substrate material and form an air curtain to ensure the cleanliness and stability of the substrate, while avoiding cross-contamination of precursors between adjacent reaction chambers. Open the air curtain between the current chamber and the target adjacent chamber. The transfer valve is operated from the glove box. The transfer track in the transition chamber is connected to the fixed track in the reaction chamber. The sample stage is pushed to move on the track. After moving to the adjacent chamber (currently the second reaction chamber 2), the transfer track is reset, and the transfer valve that has been passed (currently the transfer valve between the second reaction chamber 2 and the second transition chamber 5), the inert gas purging unit and the vacuum pump of the transition chamber are closed. If further transfer is required, the same steps are performed (currently, the transfer valve between the first transition chamber 4 and the second reaction chamber 2, the first inert gas purging unit and the second vacuum pump are opened, the transfer track in the first transition chamber 4 is extended and connected to the fixed track in the second reaction chamber 2, the sample stage is transferred to the first transition chamber 4, the transfer track is reset, and the transfer valve between the first transition chamber 4 and the second reaction chamber 2, the first inert gas purging unit and the second vacuum pump are closed). Finally, the sample stage is transferred to the first reaction chamber 1. Step 2, initial adsorption, After the first control valve is opened for 100ms and then closed, the first precursor material (e.g., trimethylaluminum) enters the first reaction chamber 1 and reacts rapidly with the hydroxyl groups on the substrate surface to form strong bonds and release methane, which is then adsorbed on the substrate surface. When the residual precursor content in the first reaction chamber reaches a stable level as detected by QMS, the initial adsorption is completed. Step 3, transfer and adsorption reaction, The sample stage is transferred to the first transition chamber 4 and then to the second reaction chamber 2 in accordance with the steps disclosed in step 1. While in the first transition chamber 4, the inert gas purge removes the excess (unstable adsorbed) first precursor material on the surface while forming an air curtain. The removed first precursor material is sucked into the second vacuum pump and finally collected by the dry adsorber to prevent it from falling off and causing pollution after entering the second reaction chamber 2. After the sample stage reaches the second reaction chamber 2, the transfer valve is closed, the second control valve is opened for 1 second and then closed, and the second precursor material (usually an oxidant, such as ozone) enters the second reaction chamber 2 and reacts with the first precursor material on the substrate surface to generate the target thin film material (alumina). Step 4, multiple depositions, After the reaction time is set, the sample stage is returned to the first reaction chamber 1, and steps 2 to 3 are repeated. After the set number of cycles, the target film thickness is achieved. Step 5, sample transfer. After the analysis is completed, the sample and substrate are transferred out of the transition chamber together, and sample testing and stripping are performed outside the preparation equipment.

[0045] Thermal Atomic Layer Deposition (ALD): The difference between this deposition method and S-ALD is that in step 2, the temperature is first raised to 300°C using an electric heating wire, and after a set heating time, steps 2 to 5 are continued.

[0046] In the above process, while the upstream compartment is carrying out operations, the downstream compartment is simultaneously preparing the environment (such as compartment purification and vacuuming) to shorten the preparation cycle.

[0047] Plasma-enhanced atomic layer deposition (PE-ALD): The difference between this deposition method and S-ALD is that the sample stage no longer enters the first reaction chamber 1. The precursor material transported in the second precursor tube in the second reaction chamber 2 is trimethylaluminum. After the substrate undergoes the first adsorption in the second reaction chamber 2, it is purged with inert gas in the second transition chamber 5, and then the sample stage is sent into the third reaction chamber 3. The third control valve and plasma source are opened and then closed after 1 second. The plasma (e.g., oxygen) enters the third reaction chamber 3 through the third precursor tube and reacts with the trimethylaluminum on the substrate surface under the discharge of the plasma source (RF power supply) to generate an alumina film. During the cyclic deposition process, when passing through the second transition chamber 5, inert gas purging removes byproducts and excess plasma.

[0048] The above preparation parameters are only examples of alumina thin film preparation and are not fixed parameters. In actual preparation, they can be adjusted according to the environmental conditions and the type of film.

[0049] Example 4 like Figure 3As shown, the difference between this embodiment and Embodiment 3 is that there is only one transition chamber, namely the first transition chamber 4. The first reaction chamber 1, the second reaction chamber 2, and the third reaction chamber 3 are arranged in a circular array around the first transition chamber 4, and an independent transfer valve is provided at the junction of the first transition chamber 4 and each reaction chamber. The facilities in the first transition chamber 4 and the second transition chamber 5 in Embodiment 1 are all concentrated in the first transition chamber 4 in Embodiment 2. The shuttle rail in the first transition chamber 4 is rotatably connected to the bottom surface of the first transition chamber 4 and is connected to an intermittent rotation mechanism, with each rotation angle being 120 degrees. This intermittent rotation mechanism is existing technology.

[0050] Example 5 The difference between this embodiment and embodiment 3 is that the second precursor supply pipe is only connected to the second precursor supply module. When the first precursor needs to be applied to the substrate, the substrate is sent into the first reaction chamber 1.

[0051] It should be noted that all operations performed through the glove box in this invention involve the preparation personnel manually inserting their hands into the gloves inside the glove box to operate or intervene in the samples or equipment inside the equipment from outside. For a single preparation mode, two reaction chambers are sufficient to meet the preparation requirements, while setting up three reaction chambers provides the conditions for introducing multiple different preparation modes in the same thin film preparation.

[0052] The circuits and mechanical connections involved in this invention are conventional methods used by those skilled in the art, and technical inspiration can be obtained through a limited number of experiments; they are common knowledge.

[0053] Components not described in detail in this article are existing technologies.

[0054] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A multi-mode, high-efficiency, super-space atomic layer deposition vacuum interconnect integration method, characterized in that: Multiple reaction chambers with different built-in facilities are connected by a transition chamber. A transfer valve is installed between the reaction chambers and the transition chamber to transfer samples between the reaction chambers with different built-in facilities for the preparation of different ALD growth modes.

2. The multi-mode high-efficiency super-space atomic layer deposition vacuum interconnect integration method according to claim 1, characterized in that: The apparatus includes a preparation device and a sample stage. The preparation device comprises a transfer chamber, a transition chamber, and a reaction chamber. The transfer chamber is connected to the transition chamber. The sample stage is located in the reaction chamber. The reaction chamber is equipped with an environment creation component and a reaction protection component. The transition chamber is equipped with an inert gas purging unit. The preparation device includes a sample transfer component, which transfers the sample between the reaction chamber and the transition chamber. After the sample stage is loaded with a substrate, reactants are obtained in the reaction chamber. Different reaction chambers supply different reactants, and the reactants react on the substrate to form a thin film.

3. The multi-mode high-efficiency super-space atomic layer deposition vacuum interconnect integration method according to claim 2, characterized in that: The number of reaction chambers is no less than the number of types of reaction precursors used, and each reaction chamber is connected to a one-type reaction precursor supply pipeline.

4. The multi-mode high-efficiency super-space atomic layer deposition vacuum interconnect integration method according to claim 2 or 3, characterized in that: The environmental creation component is a vacuum unit; while the upstream reaction chamber or transition chamber is supplying precursors or purging inert gas, the downstream transition chamber or reaction chamber simultaneously performs a preset vacuum operation.

5. The multi-mode high-efficiency super-space atomic layer deposition vacuum interconnect integration method according to claim 2, characterized in that: The height of the transition chamber is no more than twice the thickness of the sample stage.

6. The multi-mode high-efficiency super-space atomic layer deposition vacuum interconnect integration method according to claim 2 or 3, characterized in that: The sample stage contains a heating unit.

7. The multi-mode high-efficiency super-space atomic layer deposition vacuum interconnect integration method according to claim 2, characterized in that: It also includes an operating component and a detection component, wherein the operating component is located in the reaction chamber and / or the transition chamber, and the detection component is a residual gas detection unit.

8. The multi-mode high-efficiency super-space atomic layer deposition vacuum interconnect integration method according to claim 5, characterized in that: The operating components include at least one of a glove box, a robotic arm, and a sample trolley, wherein the sample trolley is located in the transfer chamber.

9. The multi-mode high-efficiency super-space atomic layer deposition vacuum interconnect integration method according to claim 2, characterized in that: The reaction support components include a raw material supply unit and / or a plasma source.

10. The multi-mode high-efficiency super-space atomic layer deposition vacuum interconnect integration method according to claim 2, characterized in that: It also includes a consultation module, which has a built-in large AI model.

Images