Substrate base assembly

Abstract

A base assembly suitable for various applications is disclosed. An exemplary base assembly includes a base plate having one or more cooling channels formed therein, an electrical isolation plate covering the base plate, a heater plate covering the electrical isolation plate, and a top plate covering the heater plate. The heater plate may be configured as a plasma power electrode.

Description

Technical Field

[0001] This disclosure generally relates to gas phase reactor systems and components thereof. More specifically, this disclosure relates to base assemblies for supporting a substrate and providing various functions during substrate processing in a gas phase reactor. Background Technology

[0002] Vapor phase reactors can be used in a variety of applications, such as chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), physical vapor deposition (PVD), atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), degassing, substrate pre-cleaning, and etching processes. For example, vapor phase reactors can be used to deposit materials, etch layers, and / or clean materials on substrates to form electronic devices, such as semiconductor devices, flat panel display devices, photovoltaic devices, and microelectromechanical systems (MEMS).

[0003] A typical gas-phase reactor system comprises one or more reactors, each including a reaction chamber, a pedestal assembly within the reaction chamber, and one or more gas sources fluidly connected to the reaction chamber. Typically, the design or configuration of the pedestal assembly used to support the substrate depends on the type of process. For example, pedestal assemblies used during pre-cleaning and / or degassing processes are often configured differently from those used in plasma-enhanced processes. Similarly, the configuration of pedestal assemblies used in CVD processes may differ from that used in PVD processes. While such dedicated pedestal design configurations are effective for many applications, using such dedicated pedestal designs can be relatively expensive and / or time-consuming when, for example, reconfiguring a gas-phase reactor for a different process. Furthermore, spare parts storage and / or replacement can be relatively expensive when using specially designed pedestals. Therefore, there is a need for improved pedestal designs that can be used in a variety of applications.

[0004] Any discussion of the problems and solutions described in this section is included in this disclosure and is only used to provide background to this disclosure, and should not be construed as an admission that any or all of the discussions are prior art or known at the time of making this invention. Summary of the Invention

[0005] Various embodiments of this disclosure relate to base assemblies and components suitable for use in gas-phase reactor apparatuses and systems, and to reactor systems including base assemblies. Exemplary base assemblies can be used during a variety of gas-phase processes and are relatively easy and inexpensive to maintain. While various embodiments of this disclosure address the disadvantages of existing base assemblies in more detail below, in general, various embodiments of this disclosure provide improved base assemblies that include various electrodes, heaters, and cooling channels, enabling the base to be used in different processes such as plasma-enhanced processes (e.g., PEALD or PECVD), PVD, pre-cleaning processes, degassing processes, etching processes, etc.

[0006] According to at least one embodiment of this disclosure, a base assembly includes a base plate having one or more cooling channels formed therein, an electrical isolation plate covering the base plate, a heater plate covering the electrical isolation plate, and a top plate covering the heater plate. Examples of these embodiments include the base plate and the electrical isolation plate having openings through the respective plates to allow conduits and various connectors, wires, thermocouples, and / or other devices to be inserted therein and to form part of the assembly. According to another example, the assembly may include a bellows assembly. The bellows assembly may be coupled to the base plate and / or ground plane. According to a further example, the base assembly includes a conductive conduit electrically coupled to the heater plate. The conductive conduit may be disposed within openings in the base plate and the isolation plate. The base assembly may further include a plasma power source electrically coupled to the conductive conduit. The conductive conduit may be or include a metal conduit and a silver coating thereon. As described in more detail below, various plates may be coupled to one or more adjacent plates. For example, a metal (e.g., a post-transition metal, such as indium, etc.) may be used to join the plates together. The top plate may include electrostatic clamping electrodes. At least one of the electrostatic electrodes may be electrically coupled to an electrostatic clamping power source. The electrostatic clamping power supply can be configured to apply a first electrostatic bias to the electrostatic electrode to clamp the substrate, and to apply a contrasting second electrostatic bias to the electrostatic electrode to release the substrate. The heater plate is configured as or used as a plasma power electrode. Alternatively or additionally, the heater plate may include one or more heaters at least partially embedded therein. A top plate may be removably attached to the heater plate. According to another example, the heater plate may include a heater plate opening therethrough. The heater plate opening may be fluidly coupled to a cooling gas source to provide cooling gas near the top plate.

[0007] According to another embodiment of this disclosure, a reactor system includes one or more reactors, wherein at least one of the one or more reactors includes a base assembly as described herein. The reactor system may additionally include one or more gas sources, vacuum sources, and controllers coupled to the one or more reactors.

[0008] These and other embodiments will be readily understood by those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings. The invention is not limited to any particular embodiment disclosed. Attached Figure Description

[0009] Exemplary embodiments of this disclosure can be more fully understood when considered in conjunction with the following illustrative drawings, and by referring to the detailed description and claims.

[0010] Figure 1 A reactor system according to at least one embodiment of the present disclosure is shown.

[0011] Figure 2 An exploded view of a base assembly according to an example of this disclosure is shown.

[0012] Figure 3 A cooling channel in a base plate according to an example of this disclosure is shown.

[0013] Figure 4 An electrostatic clamping electrode pattern according to an example of this disclosure is shown.

[0014] Figure 5 Another base component is shown as an example according to this disclosure.

[0015] Figure 6 A cross-sectional view of a base assembly according to an example of this disclosure is shown.

[0016] Figure 7 A top view of a base assembly according to an example of this disclosure is shown.

[0017] Figure 8 Examples according to this disclosure are shown. Figure 5 A bottom view of the base component.

[0018] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements may be exaggerated relative to other elements to aid in understanding the embodiments shown in this disclosure. Detailed Implementation

[0019] Although certain embodiments and examples are disclosed below, it should be understood that the invention extends beyond the specific embodiments and / or uses disclosed herein, as well as their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited to the specific embodiments described below.

[0020] This disclosure generally relates to base assemblies suitable for use with gas-phase reactor systems, and to reactor systems including base assemblies. Base assemblies and systems as described herein can be used to process substrates (such as semiconductor wafers) to form, for example, electronic devices.

[0021] The exemplary base assembly described herein can be used in various processes, such as CVD, ALD, plasma-enhanced processes, etching processes, cleaning processes, PVD, etc. In other words, the same base can be used for any combination of these or similar processes. This allows for relatively quick and inexpensive changes to reactor configurations and allows for relatively inexpensive storage of spare parts.

[0022] As used herein, the term substrate can refer to any one or more underlying materials, including and / or materials deposited thereon. Substrates can include bulk materials such as silicon (e.g., single-crystal silicon), other group IV materials (e.g., germanium), or compound semiconductor materials (e.g., GaAs), and can include one or more layers overlaid or under the bulk material. For example, a substrate can include a patterned stack of several layers covering the bulk material. The patterned stack can vary depending on the application. Furthermore, a substrate can include various gaps formed on the substrate surface, such as recesses, vias, spaces between lines, trenches, etc.

[0023] In this disclosure, the gas may include materials that are gaseous at normal temperature and pressure (NTP), evaporated solids and / or evaporated liquids, and may consist of a single gas or a mixture of gases, depending on the circumstances. Gases other than process gases, i.e., gases introduced without passing through gas distribution components, other gas distribution devices, etc., may be used, for example, to seal the reaction space, and may include sealing gases, such as rare gases.

[0024] In this disclosure, any two numbers of a variable may constitute a feasible range of the variable, and any range indicated may include or exclude endpoints. Additionally, in some embodiments, any value of the indicated variable (whether or not it is indicated by "about") may refer to an exact value or an approximate value and include equivalents, and may refer to an average, median, representative value, multi-value, etc. For example, the term "about" may refer to + / - 20%, 10%, 5%, 2%, or 1% of a value. Furthermore, in this disclosure, the terms "comprising," "including," "consisting of," and "having," and their equivalents, may independently refer in some embodiments to generally or broadly encompassing, substantially consisting of, or composed of. According to various aspects of this disclosure, the meaning of any definition of a term does not necessarily exclude the common and customary meaning of the term.

[0025] Now turn to the attached diagram. Figure 1A reactor system 100 according to at least one embodiment of the present disclosure is shown. The reactor system 100 includes a reactor 102, which includes a reaction chamber 104, a gas distribution device 106, a base assembly 108, gas sources 110-116, an exhaust source 118, a controller 120, a heater power supply 132, a plasma power supply 134, a cooling fluid source 136, and an electrostatic clamping power supply 138. Although shown as a single reactor 102 / reaction chamber 104, the reactor system 100 may include any suitable number of reaction chambers 104 and may optionally include one or more substrate processing systems.

[0026] Reactor 102 can be configured as a CVD reactor, a circulating deposition process reactor (e.g., a circulating CVD reactor), an ALD reactor, a PEALD reactor, a PVD reactor, a clean chamber, a degassing chamber, etc., any of which may include plasma equipment, such as direct and / or remote plasma equipment. Reaction chamber 104 can be formed of a suitable material, such as quartz, metal, etc., and can be configured to hold one or more substrates for processing. As described in more detail below, pedestal assembly 108 can be used in any such reactor configuration. Pedestal assembly 108 allows reactor 102 to be configured and easily reconfigured as needed (e.g., as a plasma or non-plasma reactor, with or without electrostatic clamping, with or without cooling, etc.).

[0027] The reaction chamber 104 includes an upper chamber portion 124 and a lower chamber portion 126. The upper chamber portion 124 and the lower chamber portion 126 may be separated by a partition plate 128. Alternatively, the upper chamber portion 124 may be above the top surface 130 of the base assembly 108, and / or the lower chamber portion 126 may be below the top surface 130 of the base assembly 108.

[0028] The gas distribution device 106 supplies gas from one or more gas sources 110-114 to the upper chamber portion 124. For example, the gas distribution device 106 may be or include an assembly containing a spray head device.

[0029] The base assembly 108 can support the substrate to be processed and can be positioned below the gas distribution device 106. The base assembly 108 can be coupled to a movable axis 109, which can move the base assembly 108 from the processing position to the loading / unloading position, as described below.

[0030] Gas sources 110-116 may each include a container and a reactant, precursor, or cooling gas stored within the respective container. For example, the first gas source 110 may include a container and a carrier gas; the second gas source 112 may include a container and a precursor for the deposition or etching process; the third gas source 114 may include a container and a reactant; and the fourth gas source 116 may include a container and a cooling gas, such as argon, helium, a mixture of hydrogen and helium, neon, etc.

[0031] Any of the gas sources 110-116 may be connected to the remote plasma unit (RPU) 122 and / or may bypass the RPU 122 and be connected to the gas distribution device 106 or the upper chamber section 124. Furthermore, although four gas sources 110-116 are shown, the exemplary system may include any suitable number of gas sources (e.g., four or more) connected to the reaction chamber 104.

[0032] Exhaust source 118 may include, for example, one or more vacuum sources. Exemplary vacuum sources include one or more dry vacuum pumps and / or one or more turbomolecular pumps.

[0033] Controller 120 can be configured to perform various functions and / or steps as described herein. Controller 120 may include one or more microprocessors, memory elements, and / or switching elements to perform various functions. Although shown as a single unit, controller 120 may alternatively include multiple devices. For example, controller 120 may be used to control gas flow from one or more gas sources 110-114 to reaction chamber 104 during a process; gas flow from cooling gas source 116, a portion of base assembly 108, etc. Additional functions of controller 120 are discussed in more detail below.

[0034] The baffle plate 128 can be used to control the gas flow between the upper chamber portion 124 and the lower chamber portion 126. The reactor 102 may also include one or more exhaust ports 140, 142 on the top surface 130 (above) and (below).

[0035] Figure 2 An exploded view of a base assembly 200 according to an example of this disclosure is shown. The base assembly 200 can be used as a base assembly 108—for example, within a reactor system 100.

[0036] In the illustrated example, the base assembly 200 includes a base plate 202, an electrical isolation plate 204, a heater plate 206, and a top plate 208. The base assembly 200 further includes a bellows assembly 210 and a grounding plate 211. As shown, the base assembly 200 may also include one or more of a heater power supply 212, a cooling gas source 214, a cooling fluid source 216, a plasma power supply 218, and an electrostatic clamping power supply 220.

[0037] The base plate 202 can be formed of any suitable material, such as a thermally conductive material. For example, the base plate 202 can suitably comprise or be formed of metal, such as aluminum, stainless steel, copper, etc. The base plate 202 may include one or more cooling channels 222 formed therein, such that cooling fluid (e.g., water, ethylene glycol-water mixture, etc.) from the cooling fluid source 216 can flow through the one or more cooling channels 222 to cool the base assembly 200. The base plate 202 includes a base plate opening 224 through which various conduits and / or wires can flow, as discussed in more detail below. The diameter or similar cross-sectional dimension of the base plate 202 can be from about 300 to about 400 mm. The height of the base plate 202 can be between about 5 and about 25 mm.

[0038] Figure 3 A cross-sectional view of an exemplary base plate 300 suitable for use as a base plate 202 is shown. In this example, the base plate 300 includes a single cooling channel 304, which includes an inlet 306 and an outlet 308.

[0039] Electrically insulating plate 204 is positioned to cover base plate 202. Electrically insulating plate 204 can be formed of any suitable electrically insulating and thermally conductive material. As an example, electrically insulating plate 204 may include or be formed of a ceramic material. Exemplary suitable ceramic materials include those having a thermal conductivity greater than 30 W / mK. Such materials include alumina, alumina composites, aluminum silicon carbide, aluminum nitride, etc.

[0040] According to an example of this disclosure, an electrical isolation plate 204 is bonded to a base plate 202. The electrical isolation plate 204 can be bonded to the base plate 202 using a thermally conductive bond (e.g., indium, polymer, aluminum, etc.). The bond allows for thermal conduction between the plates and provides vacuum integrity between them.

[0041] The electrical isolation plate 204 includes an isolation plate opening 226 passing through it. Similar to the base plate opening 224, the isolation plate opening 226 can be configured to receive various conductors and / or conduits and / or other peripheral devices therein. However, the isolation plate opening 226 can be smaller than the base plate opening 224 because the isolation plate opening 226 does not need to receive conduits for cooling fluid, which is received within the base plate opening 224. In some cases, the diameter or other similar cross-sectional dimensions of the electrical isolation plate 204 can be the same as or similar to the diameter or other similar cross-sectional dimensions of the base plate 202. The height of the electrical isolation plate 204 can be between about 5 mm and about 25 mm.

[0042] The heater plate 206 can be formed of any suitable thermally conductive material. For example, the heater plate 206 can be formed of metal or metallic materials (such as aluminum, stainless steel, etc.) or ceramic materials (such as alumina, alumina composites, etc.).

[0043] According to an example of this disclosure, heater plate 206 includes one or more (e.g., resistance) heaters 207 at least partially embedded therein or on it (e.g., in a groove on the back side). The heaters 207 may be formed of, for example, stainless steel, other grades of steel, tungsten, etc. According to an example of this disclosure, heater plate 206 will also serve as a plasma power electrode.

[0044] The heater plate 206 covers the electrical isolation plate 204 and can be (e.g., directly) bonded to the electrical isolation plate 204. Bonding can be accomplished using the techniques and / or (e.g., thermally conductive) materials described herein.

[0045] Heater plate 206 includes a heater plate opening 228 passing through it. Heater plate opening 228 can be configured to receive various conduits and / or other peripheral devices therein. Heater plate opening 228 can be smaller than isolation plate opening 226 because heater plate opening 228 does not need to receive various components, such as electrical conductors coupled to heater plate 206. In some cases, the diameter or other similar cross-sectional dimension of heater plate 206 can be the same as or smaller than the diameter or other similar cross-sectional dimension of electrical isolation plate 204. According to an example of this disclosure, heater plate opening 228 is fluidly coupled to a cooling gas source 214 to provide cooling fluid in the vicinity of top plate 208 (e.g., on its rear side).

[0046] The top plate 208 can similarly be formed of a thermally conductive ceramic material. Exemplary top plate materials include ceramics, such as alumina, aluminum nitride, etc.

[0047] Top plate 208 covers heater plate 206. Top plate 208 may be bonded to heater plate 206 using the bonding techniques and / or materials described herein. Alternatively, top plate 208 may be removably (e.g., mechanically) coupled to heater plate 206.

[0048] Figure 4 A top view of a top plate 400 suitable for use as a top plate 208 is shown. The top plate 400 includes a top surface 402 having electrostatic clamping electrodes 404 and 406. As shown, the electrostatic clamping electrodes 404 and 406, or at least a portion thereof, may be spaced apart by a substantially constant distance. Furthermore, the electrostatic clamping electrodes 404 and 406 may be formed in a generally spiral shape above the top surface 402. Additionally, as shown, the electrostatic clamping electrodes 404 and 406 may include interdigitated protrusions or fingers 408 and 410. The electrostatic clamping electrodes 404 and 406 may be formed of any suitable material, such as tungsten, chromium-rich steel, molybdenum, etc.

[0049] Refer again Figure 2The heater power supply 212 may include any suitable power source. For example, the heater power supply 212 may include an electric current source. The heater power supply 212 may include a controller or may be controlled by the controller 120. As shown, the heater power supply 212 may be electrically connected to one or more heaters 207 using wires 234 within openings 224 and 226.

[0050] Cooling gas source 214 may include container 215 and cooling gas therein. Exemplary cooling gases include inert gases such as argon, helium, mixtures of hydrogen and helium, neon, etc. Cooling gas from cooling gas source 214 may be provided, for example, through conduit 230 and opening 228 near top plate 208 (e.g., to the rear surface of top plate 208).

[0051] Cooling fluid source 216 may include a cooling fluid, such as water, ethylene glycol-water mixture, etc. Cooling fluid source 216 may include a container or may originate from a continuous supply. Cooling fluid source 216 may be fluidly connected to one or more cooling channels 222 to supply cooling fluid to one or more cooling channels 222, which may be the same as or similar to channel 304. Cooling fluid from cooling fluid source 216 may be supplied to the cooling fluid channel via conduit (e.g., pipe) 236. In some cases, one or more cooling channels 222 may form one or more flow loops, which may form one or more cooling zones within base plate 202.

[0052] Plasma power source 218 can be configured to provide suitable plasma power to heater plate 206, which can serve as a plasma power electrode. As shown, plasma power source 218 can be electrically connected to heater plate 206 and conductive tube 232. Conductive tube 232 can be formed of any suitable material, such as a metal conduit (e.g., copper tube) with a silver coating. Conductive tube 232 can be disposed within base plate opening 224 and within isolation plate opening 226 and bellows assembly 210.

[0053] The bellows assembly 210 can be configured to provide a basic gas seal between the base plate 202 and the ground plate 211. The bellows assembly 210 can be connected to the base plate 202 using mechanical fasteners such as bolts. The bellows assembly 210 can similarly be mechanically fastened to the ground plate 211, thereby electrically connecting the bellows assembly 210 to the ground plate 211.

[0054] The electrostatic clamping power supply 220 can be or includes any suitable power supply. For example, the electrostatic clamping power supply 220 is or includes a DC voltage power supply with polarity switching. According to examples of this disclosure, at least one electrostatic clamping electrode (e.g., electrostatic clamping electrodes 404 and / or 406) is electrically connected to the electrostatic clamping power supply 220, for example, using wire 238. In some cases, the electrostatic clamping power supply 220 is configured to apply a first electrostatic bias to the electrostatic electrodes to clamp the substrate and to apply a contrasting second electrostatic bias to the electrostatic electrodes to release the substrate.

[0055] Figures 5 to 8 Another base assembly 500 according to an example of this disclosure is shown. Base assembly 500 includes a base plate 502, an electrical isolation plate 504, and a heater plate 506. Base assembly 500 also includes a bellows assembly 508 and a grounding plate 510. Base assembly 500 may also include one or more of a heater power supply, a cooling gas source, a cooling fluid source, a plasma power supply, and an electrostatic clamping power supply, such as heater power supply 212, cooling gas source 214, cooling fluid source 216, plasma power supply 218, and electrostatic clamping power supply 220, as well as those described above. Figure 2 The corresponding pipes and conduits are described. In the example shown, the base assembly 500 also includes one or more thermocouples 612. The base assembly 200 may similarly include one or more thermocouples and / or a top plate, as described above. Figure 2 and Figure 4 As stated above.

[0056] The base plate 502, the corrugated pipe assembly 508, and the grounding plate 510 can be combined with the above. Figure 2 The base plate 202, bellows assembly 210, and ground plane 211 described are the same or similar. For example, the base plate 502 may include a cooling channel 614, which may be the same as or similar to the cooling channel 222, and the cooling channel 614 may be appropriately fluidly connected to the cooling fluid source 216 via a line (such as conduit 236).

[0057] Electrical isolation plate 504 can be formed of the same material as electrical isolation plate 204 and can be similar to electrical isolation plate 204, except that electrical isolation plate 504 includes a central portion 602 and an outer peripheral portion 604. The central portion 602 can have a diameter of about 300 to about 325 mm. The outer diameter of the outer peripheral portion 604 can be about 330 to about 400 mm; the inner diameter of the outer peripheral portion 604 can be the same as the diameter of the central portion 602. The height of the central portion 602 can be about 5 to about 15 mm. The height of the outer peripheral portion 604 can be about 5 to about 25 mm.

[0058] Heater plate 506 may be similar to heater plate 206 described above. For example, heater plate 506 may include one or more (e.g., resistive) heaters 607 at least partially embedded therein or on it (e.g., in a groove on the back side). Heater 607 may be the same as or similar to heater 207 described above. Furthermore, heater plate 506 may serve as a plasma power electrode. As shown, heater plate 506 may include conductive bumps 512. Conductive bumps 512 may be formed of any suitable conductive material, such as the conductive materials described herein. The diameter of conductive bumps 512 may be, for example, about 1.5 mm; the height of conductive bumps may be about 0.5 mm.

[0059] As described above, the base assembly 500 may include a top plate, such as the top plate 208 or 400 described above. The top plate may be placed on the conductive bump 512.

[0060] As stated above, the exemplary embodiments of this disclosure described above do not limit the scope of the invention, as these embodiments are merely examples of embodiments of the invention. In fact, various modifications to this disclosure, such as alternative useful combinations of the described elements, in addition to those shown and described herein, will become apparent to those skilled in the art from the description. These modifications and embodiments are also intended to fall within the scope of the appended claims.

Claims

1. A base assembly, comprising: A base plate having one or more cooling channels formed therein; An electrical isolation plate covering a base plate, the electrical isolation plate including an isolation plate opening therethrough; Heater plate, which is covered with an electrical isolation plate; and The top plate covers the heater plate.

2. The base assembly of claim 1 further includes a cooling fluid source fluidly connected to the one or more cooling channels.

3. The base assembly according to claim 1, wherein, The base plate is connected to the bellows assembly.

4. The base assembly according to claim 3, wherein, The bellows assembly is electrically connected to the ground plane.

5. The base assembly according to claim 1, further comprising: A conductive tube is disposed within the opening in the base plate and the opening in the isolation plate; as well as The plasma power source is electrically connected to a conductive tube.

6. The base assembly according to claim 5, wherein, The conductive tube comprises a metal conduit and a silver coating thereon.

7. The base assembly according to claim 1, wherein, The electrical isolation plate is bonded to the base plate using one or more of indium, polymer, or aluminum.

8. The base assembly according to claim 1, wherein, The heater plate is bonded to the electrical isolation plate using one or more of indium, polymer, or aluminum.

9. The base assembly according to claim 1, wherein, The top plate is attached to the heater plate.

10. The base assembly according to claim 1, wherein, The top plate includes electrostatic clamping electrodes, wherein at least one of the electrostatic electrodes is electrically connected to an electrostatic clamping power source.

11. The base assembly according to claim 10, wherein, The electrostatic clamping power supply is configured to apply a first electrostatic bias to the electrostatic electrode to clamp the substrate, and to apply a second electrostatic bias to the electrostatic electrode to release the substrate.

12. The base assembly according to claim 1, wherein, The heater plate is configured as a plasma power electrode.

13. The base assembly according to claim 1, wherein, The heater plate includes one or more heaters embedded therein.

14. The base assembly according to claim 1, wherein, The electrical isolation plate comprises a ceramic material.

15. The base assembly according to claim 14, wherein, The ceramic material is selected from one or more of alumina, silicon aluminum carbide, or aluminum nitride.

16. The base assembly according to claim 1, wherein, The base plate is made of metal.

17. The base assembly according to claim 1, wherein, The top plate is removably attached to the heater plate.

18. The base assembly according to claim 1, wherein, The heater plate includes a heater plate opening that passes through it.

19. The base assembly according to claim 18, wherein, The heater plate opening is fluidly connected to a cooling fluid source to provide cooling fluid near the top plate.

20. A reactor system comprising: A reactor, which includes a reaction chamber; The base assembly according to claim 1 within the reactor; as well as A vacuum source is connected to the reaction chamber.

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