A continuous high-temperature graphitization equipment for isostatic pressing of graphite for manufacturing large semiconductor silicon wafers.

Abstract

This invention relates to the field of graphitization equipment technology, and discloses a continuous high-temperature graphitization equipment for isostatic pressing graphite used in the manufacture of semiconductor large silicon wafers. The equipment includes a conveying mechanism installed on the inner wall of the tank, comprising a water outlet pipe; a diversion mechanism installed on the inner wall of the conveying mechanism, comprising a first tilting plate; and a turbulence mechanism installed on the inner wall of the conveying mechanism, comprising turbulence strips. When water cooling is complete, the second tilting plate returns to a horizontal position, allowing liquid to be discharged from the water inlet pipe. Impurities remain inside the distribution chamber. This prevents a large amount of impurities from remaining inside the water-cooling chamber during the reflux process after cooling, which would cause the impurities on the surface of the water-cooling chamber to be heated during the next heating process, resulting in uneven temperature distribution inside the tank and affecting the quality of the raw materials.

Description

Technical Field

[0001] This invention relates to the field of graphitization equipment technology, specifically to a continuous high-temperature graphitization equipment for isostatic pressing graphite used in the manufacture of large semiconductor silicon wafers. Background Technology

[0002] Graphitization is a key process in the preparation of isostatic graphite. It involves driving carbon atoms from a disordered arrangement to a three-dimensional ordered graphite lattice through a high temperature of 1800-3000℃, which directly determines the purity, density, thermal conductivity and thermal stability of the material, and thus affects the production yield and performance of large silicon wafers.

[0003] After the graphitization process enters the final cooling stage, due to the flow field characteristics inside the water-cooled jacket, solid impurities such as mud, rust, scale, and carbon powder are difficult to completely remove with the water flow. After the cooling operation stops, the water in the jacket flows back, and the remaining impurities are deposited at the bottom of the jacket or adhere to the inner wall surface due to gravity. When the equipment resumes heating, these accumulated impurities will continue to absorb heat, disrupting the normal heat transfer inside the furnace, causing uneven temperature distribution in the furnace and excessive local temperature differences, ultimately adversely affecting the overall performance and product quality of the isostatically pressed graphite product. Summary of the Invention

[0004] To solve the above-mentioned technical problems, the present invention provides an isostatic pressing graphite continuous high-temperature graphitization device for manufacturing large silicon wafers for semiconductors, including a placement rack, a tank fixedly connected to the top of the placement rack, a vacuum pump fixedly connected to the top of the placement rack, a gas delivery pump fixedly connected to the top of the placement rack, a crucible fixedly connected to the bottom of the inner wall of the tank, a heating wall fixedly connected to the inner wall of the tank, and several water-cooling chambers formed in the inner wall of the tank, and further including: A conveying mechanism is installed on the inner wall of the tank, and the conveying mechanism includes a water outlet pipe; A diversion mechanism is installed on the inner wall of the conveying mechanism, and the diversion mechanism includes a tilting plate. A flow-dispersing mechanism is installed on the inner wall of the conveying mechanism, and the flow-dispersing mechanism includes flow-dispersing strips; During graphitization, the operator first opens the top cover of the container, places the material inside the crucible, and then closes the container.

[0005] Preferably, the conveying mechanism further includes: Conveying assembly, which is installed on the inner wall of the tank; The flow distribution assembly is installed on the inner wall of the water-cooling cavity; During the cooling process, the operator opens the delivery assembly and delivers the liquid into the water-cooling chamber through it.

[0006] Preferably, the traffic diversion mechanism also includes: The diversion component is installed on the inner wall of the diversion component; A flow-blocking component is installed on the inner wall of the flow-dividing component; When liquid enters the flow distribution component, it is blocked by the flow baffle component, causing the fluid that was originally flowing towards the center to disperse to both sides.

[0007] Preferably, the turbulence-disrupting mechanism further includes: A rotating component is installed on the inner wall of the diversion component; A flow-dispersing component is installed on the outer wall of the rotating component. When the liquid flows out of the delivery component, it first comes into contact with the rotating component, causing the rotating component to be disturbed.

[0008] Preferably, the conveying assembly includes an inlet pipe fixedly connected to the outer wall of the tank near the bottom, and an outlet pipe whose outer wall is fixedly connected to the inner wall of the tank. During water cooling, the operator first opens the sealed outlet and inlet pipes, connects an external water pump, and allows water to flow into the water cooling chamber through the inlet pipe. As the water flow increases, the liquid eventually flows out through the outlet pipe.

[0009] Preferably, the diversion assembly includes a diversion cavity fixedly connected to the inner wall of the water-cooling cavity, and a plurality of guide plates are fixedly connected to the bottom of the diversion cavity, with a plurality of drainage grooves opened at the bottom of the guide plates; During water cooling, the liquid level inside the water cooling chamber rises, and the liquid on both sides comes into contact with the guide plate. Impurities on the liquid surface on both sides move closer to the center of the distribution chamber.

[0010] Preferably, the diversion assembly includes a plurality of flip plates 2 rotatably connected to the bottom of the diversion cavity, and the inner wall of the flip plate 1 is rotatably connected to the outer wall of the diversion cavity; Among them, the first flip plate is connected to the middle of the bottom of the diversion cavity, and there are two rotating second flip plates on each side of the first flip plate.

[0011] Preferably, the flow-blocking assembly includes a flow-inlet plate fixedly connected to the inner wall of the flow-dividing cavity, with baffles fixedly connected to both sides of the flow-inlet plate, and the end of the baffle away from the flow-inlet plate being fixedly connected to the top of the inner wall of the flow-dividing cavity. The top of the flow-dividing cavity has a plurality of outflow ports and a plurality of inflow ports. The flow plate has a notch in the middle. The liquid below the flow chamber pushes the flip plate to rotate and enter the flow chamber. At this time, the liquid will come into contact with the bottom of the flow plate and flow to both sides of the flow chamber, so that the liquid enters the side of the partition away from the flow plate.

[0012] Preferably, the rotating assembly includes a universal joint rotatably connected to the outer wall of the flow divider cavity, and a baffle strip is fixedly connected to the side of the universal joint away from the flow divider cavity; The length of the baffle strip is the same as the diameter of the outlet pipe. Multiple baffle strips are connected to each other by universal joints and multiple slots are opened on both the upper and lower sides of the baffle strip.

[0013] Preferably, the spoiler assembly includes counterweight plates fixedly connected to both ends of the spoiler strip, and slots are provided on the outer wall of the spoiler strip; When the water flow impacts the baffle strip, the baffle strip rotates randomly under the influence of the gravitational potential energy of the counterweight plate.

[0014] The present invention has the following beneficial effects: (1) By setting up a diversion cavity, when impurities on the liquid surface come into contact with the guide plate, the impurities on both sides will be driven by the liquid to push the flip plate two to flip and be gathered in the diversion cavity. The impurities will be discharged through the water outlet pipe driven by the water flow. When the water cooling ends, the flip plate two returns to the horizontal state, so that the liquid can be discharged from the water inlet pipe. The impurities are still left in the diversion cavity. In this way, it is prevented that after the cooling ends, the water in the water cooling cavity will still leave a large number of impurities in the water cooling cavity during the return process, so that when the next heating is carried out, the impurities on the surface of the water cooling cavity will also be heated at the same time, resulting in uneven temperature distribution inside the tank and affecting the quality of raw materials.

[0015] (2) By setting an inlet, when the liquid enters the distribution cavity, it will first contact the bottom of the flow plate, causing the liquid to flow along both sides of the flow plate. The liquid will enter the side of the side partitions away from the flow plate, and the liquid will flow out from the outlet to the top of the water cooling cavity. The liquid above the distribution cavity will flow back into the distribution cavity from the inlet and contact the upper surface of the flow plate. The liquid flowing on both sides will converge towards the middle of the flow plate and then flow out through the baffle strip and out of the water outlet pipe. In this way, it is prevented that when water cooling is performed, the liquid at the top cannot flow because the water outlet pipe is constantly discharging water, forming a dead zone, which would prevent the temperature at the top from being reduced in time.

[0016] (3) By setting up baffles, when liquid passes between multiple baffles, the baffles will rotate irregularly, which will cause the gap between multiple baffles to be large or small. As a result, more impurities flowing between the baffles will be dispersed by the rotation of the baffles, and more impurities will be divided into smaller impurities and discharged. In this way, it is prevented that the impurities that gather together will block the water outlet pipe and cause the device to fail to operate normally.

[0017] (4) By setting a counterweight plate, the present invention will cause the baffle strip in the middle of the outlet pipe to rotate laterally under the impact of the water flow, so that the baffle strip rotates to the same direction as the water flow. Under the flow of the liquid, the baffle strip will swing towards the inlet end of the outlet pipe. In this way, large impurities are prevented from accumulating at the inlet end of the outlet pipe, which will reduce the diameter of the outlet pipe and reduce the amount of water flowing out of the outlet pipe, thus greatly reducing the overall heat exchange efficiency of the device. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a cross-sectional view of the overall structure of the present invention; Figure 3 This is a schematic diagram of the overall structure of the flow divider cavity of the present invention; Figure 4 For the present invention Figure 3 Enlarged view of point A in the middle; Figure 5 This is a schematic diagram of the overall structure of the current splitter component of the present invention; Figure 6 For the present invention Figure 6 Enlarged view of point B in the middle; Figure 7 This is a schematic diagram of the overall structure of the flow-blocking component of the present invention; Figure 8 This is a schematic diagram of the overall structure of the drainage mechanism of the present invention.

[0020] The attached diagram lists the components represented by each number as follows: In the diagram: 12. Tank; 13. Vacuum pump; 14. Gas pump; 15. Placement rack; 16. Crucible; 17. Heating wall; 18. Water-cooled cavity; 2. Conveying mechanism; 21. Conveying assembly; 211. Water outlet pipe; 212. Water inlet pipe; 22. Diversion assembly; 221. Diversion cavity; 222. Guide plate; 223. Diversion channel; 3. Diversion mechanism; 31. Diversion assembly; 311. Tilting plate one; 312. Tilting plate two; 313. Restriction strip; 32. Baffle assembly; 321. Flow delivery plate; 322. Partition plate; 323. Outlet; 324. Inlet; 4. Flow disturbance mechanism; 41. Rotating assembly; 411. Flow disturbance strip; 412. Universal joint; 42. Flow disturbance assembly; 421. Counterweight plate; 422. Slot; Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] Example 1, please refer to Figures 1-7 This invention relates to a continuous high-temperature graphitization apparatus for isostatic pressing of graphite for manufacturing large semiconductor silicon wafers. The apparatus includes a placement rack 15, a tank 12 fixedly connected to the top of the rack 15, a vacuum pump 13 fixedly connected to the top of the rack 15, a gas delivery pump 14 fixedly connected to the top of the rack 15, a crucible 16 fixedly connected to the bottom of the inner wall of the tank 12, a heating wall 17 fixedly connected to the inner wall of the tank 12, and several water-cooling chambers 18 formed in the inner wall of the tank 12. The apparatus also includes: The conveying mechanism 2 is installed on the inner wall of the tank 12, and the conveying mechanism 2 includes a water outlet pipe 211; The diversion mechanism 3 is installed on the inner wall of the conveying mechanism 2, and the diversion mechanism 3 includes a flip plate 311; A flow-dispersing mechanism 4 is installed on the inner wall of the conveying mechanism 2, and the flow-dispersing mechanism 4 includes a flow-dispersing strip 411; During graphitization, the operator first opens the top cover of the tank 12, places the material inside the crucible 16, and then closes the tank 12.

[0023] Conveying mechanism 2 also includes: Conveying assembly 21 is installed on the inner wall of tank 12; The flow distribution assembly 22 is installed on the inner wall of the water-cooled cavity 18; During the cooling process, the operator opens the delivery assembly 21 and delivers the liquid into the water-cooled chamber 18 through the delivery assembly 21.

[0024] Example 2, please refer to Figures 2-8 This invention relates to a continuous high-temperature graphitization device for isostatic pressing of graphite for manufacturing large semiconductor silicon wafers. Based on Embodiment 1, the flow-guiding mechanism 3 further includes: The diversion component 31 is installed on the inner wall of the diversion component 22; The flow-blocking component 32 is installed on the inner wall of the flow-dividing component 22; When liquid enters the diversion component 22, it will be blocked by the flow-blocking component 32, causing the fluid that was originally flowing towards the center to disperse to both sides.

[0025] The spoiler mechanism 4 also includes: Rotating component 41 is installed on the inner wall of the diversion component 22; A flow-deflecting component 42 is installed on the outer wall of the rotating component 41. When the liquid flows out of the conveying component 21, it will first come into contact with the rotating component 41, causing the rotating component 41 to be disturbed.

[0026] The conveying assembly 21 includes an inlet pipe 212 fixedly connected to the outer wall of the tank 12 near the bottom, and an outlet pipe 211 whose outer wall is fixedly connected to the inner wall of the tank 12. When the operator performs water cooling, he first opens the sealed outlet pipe 211 and inlet pipe 212, connects an external water pump, and allows water to flow into the water cooling chamber 18 from the inlet pipe 212. As the water flow increases, the liquid will eventually flow out from the outlet pipe 211.

[0027] The diversion assembly 22 includes a diversion cavity 221 fixedly connected to the inner wall of the water-cooled cavity 18. Several guide plates 222 are fixedly connected to the bottom of the diversion cavity 221, and several diversion grooves 223 are opened at the bottom of the guide plates 222. During water cooling, the liquid level inside the water cooling chamber 18 rises, and the liquid on both sides comes into contact with the guide plate 222. Impurities on the liquid surface on both sides move closer to the center of the diversion chamber 221.

[0028] The drainage component 31 includes a number of flip plates 312 rotatably connected to the bottom of the diversion cavity 221. The inner wall of the flip plates 311 is rotatably connected to the outer wall of the diversion cavity 221. The first tilting plate 311 is connected to the middle of the bottom of the diversion cavity 221, and there are two rotating tilting plates 312 on each side of the first tilting plate 311. By setting the diversion cavity 221, when impurities on the liquid surface come into contact with the guide plate 222, the impurities on both sides will be driven by the liquid to push the second tilting plate 312 to tilt and be collected inside the diversion cavity 221. The impurities will be discharged through the water outlet pipe 211 driven by the water flow. When the water cooling ends, the second tilting plate 312 returns to the horizontal state, so that the liquid can be discharged from the water inlet pipe 212. The impurities are still left inside the diversion cavity 221. In this way, it is prevented that after the cooling is completed, a large number of impurities will still remain inside the water cooling cavity 18 during the return process. This would prevent the impurities on the surface of the water cooling cavity 18 from being heated at the same time during the next heating, resulting in uneven temperature distribution inside the tank 12 and affecting the quality of the raw materials.

[0029] The flow-blocking assembly 32 includes a flow-inlet plate 321 fixedly connected to the inner wall of the flow-dividing cavity 221. Two partition plates 322 are fixedly connected to both sides of the flow-inlet plate 321. The end of the partition plate 322 away from the flow-inlet plate 321 is fixedly connected to the top of the inner wall of the flow-dividing cavity 221. Several outlets 323 and several inlets 324 are opened at the top of the flow-dividing cavity 221. The flow plate 321 has a notch in the middle. The liquid below the flow chamber 221 pushes the flip plate 312 to rotate and enter the flow chamber 221. At this time, the liquid will come into contact with the bottom of the flow plate 321 and flow to both sides of the flow chamber 221, so that the liquid enters the side of the partition 322 away from the flow plate 321.

[0030] The rotating assembly 41 includes a universal joint 412 rotatably connected to the outer wall of the flow divider 221, and a baffle strip 411 is fixedly connected to the side of the universal joint 412 away from the flow divider 221. The length of the baffle 411 is the same as the diameter of the outlet pipe 211. Multiple baffles 411 are connected to each other by universal joints 412. Multiple slots are opened on both the upper and lower sides of the baffle 411. By setting the inlet 324, when the liquid enters the flow distribution chamber 221, it will first contact the bottom of the flow delivery plate 321, causing the liquid to flow along both sides of the flow delivery plate 321. The liquid will then enter the side of the side partitions 322 away from the flow delivery plate 321, and the liquid will flow out from the outlet 323. The liquid flowing out to the top of the water-cooling cavity 18 and above the distribution cavity 221 will flow back into the distribution cavity 221 from the inlet 324 and come into contact with the upper surface of the flow plate 321. The liquid flowing on both sides will converge towards the middle of the flow plate 321 and then flow out of the outlet pipe 211 through the baffle 411. In this way, it is prevented that when water cooling is performed, the liquid at the top cannot flow because the outlet pipe 211 is constantly discharging water, forming a dead zone, which would prevent the temperature at the top from being reduced in time.

[0031] The deflector assembly 42 includes counterweight plates 421 fixedly connected to both ends of the deflector strip 411, and slots 422 are provided on the outer wall of the deflector strip 411. When the water flow impacts the baffle 411, under the influence of the gravitational potential energy of the counterweight plate 421, the baffle 411 rotates irregularly. By setting the counterweight plate 421, under the impact of the water flow, the baffle 411 in the middle of the outlet pipe 211 will rotate laterally, so that the baffle 411 rotates to a state consistent with the direction of water flow. Under the flow of liquid, the baffle 411 will swing towards the inlet end of the outlet pipe 211. In this way, large impurities are prevented from accumulating at the inlet end of the outlet pipe 211, which leads to a reduction in the diameter of the outlet pipe 211 and a reduction in the amount of water flowing out of the outlet pipe 211, resulting in a significant decrease in the overall heat exchange efficiency of the device.

[0032] A specific application of this embodiment is as follows: At the start of the operation, the operator first seals the outlet pipe 211 and the inlet pipe 212, then opens the top cover of the tank 12, places the raw material into the crucible 16, closes the cover to seal the inside of the tank 12, and then starts the vacuum pump 13 to extract the air from the inside of the tank 12. When the inside of the tank 12 becomes a vacuum, the gas pump 14 is started to deliver inert gas into the inside of the tank 12. After the gas delivery is completed, the operator starts the heating wall 17 to heat the raw material inside the crucible 16. When the temperature inside the tank 12 reaches the rated value, the operator stops heating and keeps the inside of the tank 12 warm. When the warming time reaches the rated value, the operator allows the tank 12 to cool down by relying on furnace radiation and natural convection.

[0033] When tank 12 cools to a low temperature, the operator opens the outlet pipe 211 and inlet pipe 212, and simultaneously starts the external water pump to supply water to the water-cooling chamber 18. As the liquid level inside the water-cooling chamber 18 begins to rise, the old scale and remaining impurities on the outer wall of the water-cooling chamber 18 will rise with the liquid level. When the liquid levels on both sides contact the guide plate 222, the impurities on the liquid surface will adhere to the outer wall at the bottom of the guide plate 222, and some liquid will enter the drainage channel 22. In step 3, the impurities originally attached to the guide plate 222 are pushed again, causing them to move closer to the center of the diversion cavity 221. When the liquid flows to the area below the second flip plate 312 and the first flip plate 311, the liquid will push the second flip plate 312 and the first flip plate 311 to rotate, keeping the first flip plate 311 and the second flip plate 312 in a vertical state. At this time, the liquid will enter the diversion cavity 221. When the liquid contacts the bottom of the flow delivery plate 321, the liquid will flow to both sides of the flow delivery plate 321, towards the flow delivery... The liquid flowing on both sides of plate 321 will enter the chamber of partition 322 on the side away from the flow plate 321. At this time, the liquid will flow out from the two outlets 323 and enter from the inlet 324. When the liquid enters from the inlet 324, it will contact the outer wall of the flow plate 321. At this time, the liquid will flow along the outer wall of the flow plate 321 towards the center of the flow plate 321. Finally, the liquid will flow out from the middle of the flow plate 321 and contact the baffle 411 and the tilting plate 311. When the liquid comes into contact with the first tilting plate 311, it will return to a horizontal state, while the second tilting plate 312 will remain vertical. When the liquid comes into contact with the baffle strip 411, the impact of the liquid will cause the baffle strip 411 to shake, causing the gaps between the multiple baffle strips 411 to contract and expand. When the baffle strip 411 in the middle of the outlet pipe 211 is impacted by the water flow, it will rotate, thus causing the middle baffle strip 411 to rotate to a state in the same direction as the water flow. When the tank 12 has cooled down, the operator stops the external water pump, causing the water level inside the water-cooling chamber 18 to drop. At this time, the multiple tilting plates 312 will return to a horizontal state under the impact of the water flow. Then, the operator takes the raw material out of the crucible 16 through the valve cover of the tank 12 and performs performance testing on the raw material.

[0034] By setting up the diversion chamber 221, when impurities on the liquid surface come into contact with the guide plate 222, the impurities on both sides will be driven by the liquid to push the flip plate 312 to flip and be collected inside the diversion chamber 221. The impurities will be discharged through the outlet pipe 211 by the water flow. When the water cooling ends, the flip plate 312 returns to the horizontal state, so that the liquid can be discharged from the inlet pipe 212. The impurities are still left inside the diversion chamber 221. In this way, it is prevented that after the cooling is completed, a large number of impurities will still remain inside the water cooling chamber 18 during the return process. This would prevent the impurities on the surface of the water cooling chamber 18 from being heated at the same time during the next heating, resulting in uneven temperature distribution inside the tank 12 and affecting the quality of the raw materials.

[0035] By setting the inlet 324, when the liquid enters the distribution chamber 221, it will first contact the bottom of the flow plate 321, causing the liquid to flow along both sides of the flow plate 321. The liquid will then enter the side of the side partitions 322 away from the flow plate 321, and the liquid will flow out from the outlet 323 to the top of the water cooling chamber 18. The liquid above the distribution chamber 221 will flow back into the distribution chamber 221 from the inlet 324 and contact the upper surface of the flow plate 321. The liquid flowing on both sides will converge towards the middle of the flow plate 321, and then flow out through the baffle 411 and out of the water outlet pipe 211. In this way, it is prevented that when water cooling is performed, the liquid at the top cannot flow because the water outlet pipe 211 is constantly discharging water, forming a dead zone, which would prevent the temperature at the top from being reduced in time.

[0036] By setting up baffles 411, when liquid passes between multiple baffles 411, the baffles 411 will rotate irregularly. This will cause the gaps between the multiple baffles 411 to vary in size. As a result, more impurities flowing between the baffles 411 will be dispersed by the rotation of the baffles 411, and the more impurities will be divided into smaller impurities that will flow out. In this way, it is prevented that the impurities that have gathered together will block the outlet pipe 211, causing the device to malfunction.

[0037] By setting a counterweight plate 421, under the impact of water flow, the baffle 411 in the middle of the outlet pipe 211 will rotate laterally, so that the baffle 411 rotates to a state consistent with the direction of water flow. Under the flow of liquid, the baffle 411 will swing towards the inlet end of the outlet pipe 211. In this way, large impurities are prevented from accumulating at the inlet end of the outlet pipe 211, which would reduce the diameter of the outlet pipe 211 and reduce the amount of water flowing out of the outlet pipe 211, thus significantly reducing the overall heat exchange efficiency of the device.

[0038] The preferred embodiments of the present invention disclosed above are merely illustrative of the invention. These preferred embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to better understand and utilize the invention. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. A continuous high-temperature graphitization equipment for isostatic pressing graphite for manufacturing large semiconductor silicon wafers, comprising a placement rack (15), a tank (12) fixedly connected to the top of the placement rack (15), a vacuum pump (13) fixedly connected to the top of the placement rack (15), a gas delivery pump (14) fixedly connected to the top of the placement rack (15), a crucible (16) fixedly connected to the bottom of the inner wall of the tank (12), a heating wall (17) fixedly connected to the inner wall of the tank (12), and a plurality of water-cooled cavities (18) formed in the inner wall of the tank (12); characterized in that, Also includes: The conveying mechanism (2) is installed on the inner wall of the tank (12) and includes a water outlet pipe (211). The diversion mechanism (3) is installed on the inner wall of the conveying mechanism (2), and the diversion mechanism (3) includes a flip plate (311). A flow-disrupting mechanism (4) is installed on the inner wall of the conveying mechanism (2), and the flow-disrupting mechanism (4) includes a flow-disrupting strip (411). When the operator is graphitizing, he first opens the top cover of the tank (12), places the material inside the crucible (16), and then closes the tank (12).

2. The isostatic pressing graphite continuous high-temperature graphitization equipment for manufacturing large semiconductor silicon wafers according to claim 1, characterized in that: The conveying mechanism (2) further includes: A conveying assembly (21) is installed on the inner wall of the tank (12); The flow splitter assembly (22) is installed on the inner wall of the water-cooled cavity (18); During the cooling process, the operator opens the delivery assembly (21) and delivers the liquid through the delivery assembly (21) into the water-cooled chamber (18).

3. The isostatic pressing graphite continuous high-temperature graphitization equipment for manufacturing large semiconductor silicon wafers according to claim 2, characterized in that: The drainage mechanism (3) also includes: A drainage component (31) is installed on the inner wall of the diversion component (22); A flow-blocking assembly (32) is installed on the inner wall of the flow-dividing assembly (22); When the liquid enters the diversion component (22), it will be blocked by the flow-blocking component (32), causing the fluid that was originally flowing towards the middle to disperse to both sides.

4. The isostatic pressing graphite continuous high-temperature graphitization equipment for manufacturing large semiconductor silicon wafers according to claim 3, characterized in that: The turbulence-disrupting mechanism (4) further includes: Rotating assembly (41), the rotating assembly (41) is installed on the inner wall of the diversion assembly (22); A turbulence-disrupting assembly (42) is installed on the outer wall of the rotating assembly (41); When the liquid flows out from the delivery component (21), it will first come into contact with the rotating component (41), causing the rotating component (41) to be disturbed.

5. The isostatic pressing graphite continuous high-temperature graphitization equipment for manufacturing large semiconductor silicon wafers according to claim 4, characterized in that: The conveying assembly (21) includes an inlet pipe (212) fixedly connected to the outer wall of the tank (12) near the bottom, and the outer wall of the outlet pipe (211) is fixedly connected to the inner wall of the tank (12). When the operator performs water cooling, he first opens the sealed outlet pipe (211) and inlet pipe (212), connects an external water pump, and makes the water flow from the inlet pipe (212) into the water cooling chamber (18). As the water flow increases, the liquid will eventually flow out from the outlet pipe (211).

6. The isostatic pressing graphite continuous high-temperature graphitization equipment for manufacturing large semiconductor silicon wafers according to claim 5, characterized in that: The diversion assembly (22) includes a diversion cavity (221) fixedly connected to the inner wall of the water-cooled cavity (18). A number of guide plates (222) are fixedly connected to the bottom of the diversion cavity (221), and a number of diversion grooves (223) are opened at the bottom of the guide plates (222). During water cooling, the liquid level inside the water cooling chamber (18) rises, and the liquid on both sides comes into contact with the guide plate (222). Impurities on the liquid surface on both sides move closer to the middle of the diversion chamber (221).

7. The isostatic pressing graphite continuous high-temperature graphitization equipment for manufacturing large semiconductor silicon wafers according to claim 6, characterized in that: The drainage assembly (31) includes a plurality of flip plates (312) rotatably connected to the bottom of the diversion cavity (221), and the inner wall of the flip plate (311) is rotatably connected to the outer wall of the diversion cavity (221). Among them, the first flip plate (311) is connected to the middle of the bottom of the diversion cavity (221), and there are two rotating second flip plates (312) on each side of the first flip plate (311).

8. The isostatic pressing graphite continuous high-temperature graphitization equipment for manufacturing large semiconductor silicon wafers according to claim 7, characterized in that: The flow-blocking assembly (32) includes a flow-feeding plate (321) fixedly connected to the inner wall of the flow-dividing cavity (221). Two partitions (322) are fixedly connected to both sides of the flow-feeding plate (321). The end of the partition (322) away from the flow-feeding plate (321) is fixedly connected to the top of the inner wall of the flow-dividing cavity (221). The top of the flow-dividing cavity (221) has several outlets (323) and several inlets (324). The flow plate (321) has a notch in the middle. The liquid below the flow chamber (221) pushes the flip plate (312) to rotate and enter the flow chamber (221). At this time, the liquid will come into contact with the bottom of the flow plate (321) and flow to both sides of the flow chamber (221), so that the liquid enters the side of the partition plate (322) away from the flow plate (321).

9. The isostatic pressing graphite continuous high-temperature graphitization equipment for manufacturing large semiconductor silicon wafers according to claim 6, characterized in that: The rotating assembly (41) includes a universal joint (412) rotatably connected to the outer wall of the diversion cavity (221), and a baffle strip (411) is fixedly connected to the side of the universal joint (412) away from the diversion cavity (221). The length of the baffle strip (411) is the same as the diameter of the outlet pipe (211). Multiple baffle strips (411) are connected to each other by universal joint (412) and multiple slots are opened on both the upper and lower sides of the baffle strip (411).

10. The isostatic pressing graphite continuous high-temperature graphitization equipment for manufacturing large semiconductor silicon wafers according to claim 9, characterized in that: The turbulence assembly (42) includes counterweight plates (421) fixedly connected to both ends of the turbulence strip (411), and the outer wall of the turbulence strip (411) is provided with slots (422). When the water flow impacts the baffle strip (411), the baffle strip (411) rotates randomly under the influence of the gravitational potential energy of the counterweight plate (421).

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