Semiconductor ceramic sintering time control method and system

Abstract

The application provides a semiconductor ceramic sintering time control method and system, relates to the technical field of semiconductor ceramic sintering, and comprises the following steps: acquiring a system trigger signal; controlling a preset ventilation device to ventilate an atmosphere into a preset sintering device based on the system trigger signal, and acquiring an atmosphere starting signal; controlling the sintering device to heat up to a preset reference sintering temperature based on the atmosphere starting signal, and acquiring a heating-up completion signal; acquiring a key atmosphere concentration and a heating device current based on the heating-up completion signal; analyzing the key atmosphere concentration to determine a corrected holding time; analyzing the corrected holding time and the heating device current to determine an actual holding time and a fan moving path; and controlling the sintering device to sinter a preset ceramic green body according to the actual holding time, the fan moving path and preset ceramic sintering parameters, so as to generate a semiconductor ceramic finished product. The application has the effect of guaranteeing the reliability of the semiconductor ceramic finished product.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor ceramic sintering, and in particular to a method and system for controlling the sintering time of semiconductor ceramics. Background Technology

[0002] The semiconductor ceramic sintering time control method refers to the method of controlling the holding time during the semiconductor ceramic sintering process, with the aim of improving the reliability of the finished semiconductor ceramic product.

[0003] In related technologies, the sintering time control method for semiconductor ceramics typically involves starting the gas supply device to introduce an atmosphere into the sintering device at the same time as the sintering device begins to heat up. When the temperature reaches the preset holding temperature, the heating is stopped, and the holding stage begins. The holding time is set based on the operator's long-term production experience with the product. After the holding stage ends, the sample is cooled to room temperature at a set cooling rate, thereby completing the sintering of the semiconductor ceramic.

[0004] Regarding the aforementioned technologies, the holding time is set based on the operator's long-term production experience. However, if the heating device in the sintering apparatus malfunctions, the uniformity of the temperature field within the sintering apparatus will be affected. If the original holding time is still used for holding, the semiconductor ceramic will not be sintered sufficiently, resulting in a decrease in the reliability of the finished semiconductor ceramic product. There is still room for improvement. Summary of the Invention

[0005] To ensure the improved reliability of finished semiconductor ceramic products, this application provides a method and system for controlling the sintering time of semiconductor ceramics.

[0006] In a first aspect, this application provides a method for controlling the sintering time of semiconductor ceramics, employing the following technical solution: A method for controlling the sintering time of semiconductor ceramics includes: Obtain system trigger signals; Based on the system trigger signal, the preset ventilation device is controlled to introduce atmosphere into the preset sintering device, and the atmosphere start signal is obtained. The sintering apparatus is heated to a preset reference sintering temperature based on the atmosphere start signal, and a heating completion signal is obtained. The key atmosphere concentration and heating device current are obtained based on the heating completion signal; Analyze the key atmosphere concentrations to determine the corrected holding time; The corrected heat preservation time and heating device current are analyzed to determine the actual heat preservation time and fan movement path; The sintering device is controlled to sinter the preset ceramic green body according to the actual heat preservation time, the fan movement path and the preset ceramic sintering parameters to produce semiconductor ceramic finished products.

[0007] Optionally, the steps of analyzing the critical atmosphere concentration to determine the corrected holding time include: Calculate the absolute value of the difference between the critical atmosphere concentration and the preset atmosphere target concentration to generate the critical atmosphere deviation; Determine whether the critical atmosphere deviation is less than the preset standard atmosphere deviation; If it is less than the preset basic insulation time, then the corrected insulation time will be defined as the basic insulation time. If it is not less than, then the critical atmosphere deviation and the preset basic insulation time are analyzed to determine the corrected insulation time.

[0008] Optionally, the steps to analyze key atmosphere deviations and preset baseline insulation times to determine corrected insulation times include: Determine whether the critical atmosphere deviation is greater than the preset fault atmosphere deviation; If the value is greater than the preset leak warning message, output the preset leak warning message. If it is not greater than, then calculate the product of the critical atmosphere deviation and the preset leakage compensation coefficient to generate the atmosphere compensation time. Calculate the sum of the atmosphere compensation time and the basic insulation time to generate the corrected insulation time.

[0009] Optionally, the steps of analyzing the corrected heat preservation time and heating device current to determine the actual heat preservation time and fan movement path include: Get the current peak temperature and the current trough temperature; Analyze the current temperature peak and current temperature trough to determine the redundant insulation time; Determine whether the current of the heating device meets the preset normal operating current range; If the conditions are met, the difference between the corrected insulation time and the redundant insulation time is calculated to generate the actual insulation time, and the preset loop movement path is defined as the fan movement path. If it does not match, then obtain the position of the heating device corresponding to the heating device current; The redundant insulation time, heating device location, and corrected insulation time are analyzed to determine the actual insulation time and fan movement path.

[0010] Optionally, the steps of analyzing the current temperature peak and current temperature trough to determine the redundant insulation time include: Calculate the difference between the current temperature peak and the current temperature trough to generate the current temperature deviation; Calculate the difference between the current temperature deviation and the preset reference temperature deviation to generate a uniform temperature deviation; Calculate the product of the uniform temperature deviation and the preset rotation speed uniformity coefficient to generate redundant heat preservation time.

[0011] Optionally, the steps of analyzing redundant insulation time, heating device location, and corrected insulation time to determine the actual insulation time and fan movement path include: Calculate the sum of the corrected insulation time and the redundant insulation time to generate the actual insulation time; Determine whether the heating device is located at the preset side wall heating position or the preset top heating position; If it is a top heating position, the preset loop movement path will be defined as the fan movement path; If the heating element is located on the side wall, the position of the heating device is analyzed to determine the fan's movement path.

[0012] Optionally, the step of analyzing the location of the heating device to determine the fan's movement path includes: Determine whether the heating device is in a preset single heating position or a preset dual heating position; If it is a single heating position, the single-sided path of the fan is determined according to the position of the heating device and the preset single-sided movement correspondence. Associate the fan's single-sided path with the preset adjacent loop path to generate the fan's movement path; If there are two heating positions, then obtain the positional installation relationship of the heating device. Determine whether the installation position relationship is a preset opposing installation relationship or a preset adjacent installation relationship; If the installation is in a conflicting relationship, the preset loop movement path will be defined as the fan movement path. If the installations are adjacent, the fan movement path is determined based on the location of the heating device and the preset correspondence between adjacent single-sided movements.

[0013] Secondly, this application provides a semiconductor ceramic sintering time control system, which adopts the following technical solution: A semiconductor ceramic sintering time control system, comprising: The acquisition module is used to acquire system trigger signals, atmosphere start signals, heating completion signals, key atmosphere concentrations, and heating device current. A memory for storing a program for a semiconductor ceramic sintering time control method as described in any of the preceding claims; The processor and the program in the memory can be loaded and executed by the processor to implement a semiconductor ceramic sintering time control method as described in any of the above.

[0014] In summary, this application includes at least one of the following beneficial technical effects: 1. By controlling the ventilation device to introduce atmosphere into the sintering device, the sintering device is heated to the reference sintering temperature. After analyzing the key atmosphere concentration, the corrected holding time is determined. Then, after analyzing the corrected holding time and the current of the heating device, the actual holding time and the fan movement path are determined. Based on the actual holding time, the fan movement path and the ceramic sintering parameters, the sintering device is controlled to sinter the ceramic green body to produce semiconductor ceramic products. In the event of a heating device failure, the temperature field is uniformized by moving the fan to purge and correct the holding time. This eliminates the need to set the holding time based on the operator's long-term production experience, thereby ensuring the improved reliability of the semiconductor ceramic products. 2. After analyzing the current temperature peak and valley values, the redundant holding time is determined. If the heating device current is within the normal operating current range, the difference between the corrected holding time and the redundant holding time is calculated to generate the actual holding time, and the loop movement path is defined as the fan movement path. If not, the actual holding time and fan movement path are determined after analyzing the redundant holding time, the heating device position, and the corrected holding time. The fan movement and purging increase the uniformity rate of the temperature field, and the holding time is precisely controlled by the fan's influence on the uniformity of the temperature field, thereby ensuring the improvement of the reliability of the semiconductor ceramic product. 3. When the heating device is determined to be in a single heating position, the single-sided path of the fan is determined based on the correspondence between the heating device position and the single-sided movement. This is then used to generate the fan movement path by associating the single-sided path with the adjacent loop path. When the heating device is determined to be in a dual heating position, the positional installation relationship of the heating devices is obtained. If the positional installation relationship is an opposing installation relationship, the loop movement path is directly defined as the fan movement path. If the installation relationship is adjacent, the fan movement path is determined based on the correspondence between the heating device position and the adjacent single-sided movement. This allows the fan movement path to be determined based on the positional relationship of the malfunctioning heating device. Furthermore, when a heating device malfunctions, starting the fan and moving it along the corresponding movement path improves the uniformity of the temperature field, thereby enhancing the reliability of the semiconductor ceramic product. Attached Figure Description

[0015] Figure 1 This is a flowchart of a semiconductor ceramic sintering time control method according to an embodiment of this application.

[0016] Figure 2 This is a flowchart of the steps in this application embodiment to analyze the key atmosphere concentration to determine the corrected heat preservation time.

[0017] Figure 3 This is a flowchart of the steps in this application embodiment to analyze key atmosphere deviations and preset basic insulation time to determine the corrected insulation time.

[0018] Figure 4 This is a flowchart of the steps in this application embodiment to analyze the corrected heat preservation time and the current of the heating device to determine the actual heat preservation time and the fan movement path.

[0019] Figure 5 This is a flowchart of the steps in this application embodiment to analyze the current temperature peak and current temperature trough to determine the redundant heat preservation time.

[0020] Figure 6 This is a flowchart illustrating the steps in this application embodiment to analyze redundant heat preservation time, heating device location, and corrected heat preservation time to determine the actual heat preservation time and fan movement path.

[0021] Figure 7 This is a flowchart of the steps in this application embodiment to analyze the position of the heating device to determine the movement path of the fan. Detailed Implementation

[0022] To make the purpose, technical solution, and advantages of this application clearer, the following description is provided in conjunction with the appendix. Figures 1 to 7 The present application will be further described in detail below with reference to embodiments. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of the application.

[0023] This application discloses a method for controlling the sintering time of semiconductor ceramics. Specifically, it discloses a sintering apparatus, a heating apparatus, a ventilation apparatus, and a processing terminal. The processing terminal is communicatively connected to both the sintering apparatus and the ventilation apparatus to achieve data interaction and control. After receiving a system trigger signal, the processing terminal controls the ventilation apparatus to introduce an atmosphere into the sintering apparatus, thereby controlling the sintering apparatus to heat up to the reference sintering temperature. After analyzing the key atmosphere concentration, a corrected holding time is determined. Based on the corrected holding time and the current of the heating apparatus, the actual holding time and the fan movement path are determined. Thus, based on the actual holding time, the fan movement path, and the ceramic sintering parameters, the sintering apparatus is controlled to sinter the ceramic green body to produce the finished semiconductor ceramic product. In the event of a heating device malfunction, the temperature field is uniformized by moving the fan to purge and correct the holding time. This eliminates the need to set the holding time based on the operator's long-term production experience, thereby ensuring improved reliability of the finished semiconductor ceramic product.

[0024] Reference Figure 1 This application discloses a method for controlling the sintering time of semiconductor ceramics, including the following steps: Step S100: Obtain the system trigger signal.

[0025] Among them, the system trigger signal refers to the system's trigger signal, which is triggered by the operator to activate the system's start switch, thereby sending the level signal representing the system trigger signal to the processing terminal, and then providing the start-up conditions for the subsequent ventilation device.

[0026] Step S101: Based on the system trigger signal, control the preset ventilation device to introduce atmosphere into the preset sintering device, and obtain the atmosphere start signal.

[0027] In this process, after receiving the system trigger signal, the processing terminal responds to the system trigger signal by controlling the ventilation device to introduce atmosphere into the sintering device and obtaining the atmosphere start signal, thereby effectively regulating the reaction between materials during the sintering process. At the same time as the atmosphere is introduced, the temperature is increased, providing the start-up conditions for the subsequent control of the sintering device to heat up to the reference sintering temperature.

[0028] A ventilation device is a device used to introduce an atmosphere into a sintering apparatus. It consists of a high-purity gas source and a controller for regulating the gas flow rate. The ventilation device is connected to the sintering apparatus through a pipeline, thereby ensuring that the sintering process of semiconductor ceramics is carried out under stable atmospheric conditions, thus ensuring the reliability of the sintered semiconductor ceramic products.

[0029] A sintering apparatus is an device used for sintering semiconductor ceramics, consisting of a high-temperature resistant and well-insulated furnace body. Two fans are installed at the midpoint of the two adjacent edges of the top of the inner wall of the sintering apparatus, and a slide rail is provided at the centerline of each inner wall surface. The fans can move along the slide rail to improve the uniformity of the temperature field within the sintering apparatus. Note that the centerline of the side wall perpendicular to the horizontal plane refers to a centerline perpendicular to the horizontal plane, not a centerline parallel to the horizontal plane. The interior of the sintering apparatus is lined with refractory material and a ceramic fiber protective layer to protect the ceramic green body. Temperature sensors and gas sensors are also installed inside the sintering apparatus to detect temperature and atmosphere concentration, respectively. Heating devices are embedded around the perimeter and top of the inner wall of the sintering apparatus. These heating devices contain heating elements and current sensors. The heating elements control the temperature within the sintering apparatus, and the current sensors detect the current flowing through the heating elements.

[0030] The atmosphere start-up signal refers to the signal indicating that the ventilation device has begun to introduce atmosphere into the sintering unit. This signal is obtained by sending a voltage level representing the atmosphere start-up signal to the processing terminal after the ventilation device begins introducing atmosphere into the sintering unit. By determining the atmosphere start-up signal, it is confirmed that the ventilation device has begun to introduce atmosphere into the sintering unit, thus providing the necessary conditions for the subsequent heating of the sintering unit to the reference sintering temperature.

[0031] Step S102: Based on the atmosphere start signal, control the sintering device to heat up to the preset reference sintering temperature and obtain the heating completion signal.

[0032] In this process, after receiving the atmosphere start signal, the processing terminal responds to the atmosphere start signal by controlling the sintering device to heat up to the reference sintering temperature and obtaining the heating completion signal, thereby raising the temperature inside the sintering device to the holding temperature required for semiconductor ceramic sintering, so as to determine the correct holding time in the future.

[0033] The reference sintering temperature refers to the temperature required for sintering semiconductor ceramics under normal operating conditions, and is set in advance by the operator. By determining the reference sintering temperature, the temperature inside the sintering apparatus is raised to the required temperature for semiconductor ceramic sintering, providing a correction reference for determining the holding time during the subsequent sintering process. This effectively avoids the problem of low reliability of semiconductor ceramic products due to insufficient or excessive sintering.

[0034] The heating completion signal refers to the signal indicating that the sintering unit has raised the temperature to the reference sintering temperature. This signal is obtained by the sintering unit sending a signal representing the heating completion status to the processing terminal after reaching the reference sintering temperature. By confirming the heating completion signal, it is determined that the temperature within the sintering unit has reached the target, facilitating subsequent acquisition of key atmosphere concentrations and heating device current.

[0035] Step S103: Obtain the key atmosphere concentration and heating device current based on the heating completion signal.

[0036] In this process, after receiving the heating completion signal, the processing terminal responds to the heating completion signal by obtaining the key atmosphere concentration and the heating device current. The key atmosphere concentration is used to determine whether there is a gas leak in the sintering device, and the heating device current is used to determine whether there is a fault in the heating device in the sintering device. This effectively avoids unstable atmosphere or uneven temperature field during the sintering process, thereby ensuring the improvement of the reliability of semiconductor ceramic sintering.

[0037] The critical atmosphere concentration refers to the concentration of key components in the atmosphere introduced into the sintering apparatus by the gas supply device, which is read from the gas sensors in the sintering apparatus by the processing terminal. The selection of the critical atmosphere is strongly related to the chemical properties, crystal structure, and desired semiconductor characteristics of the ceramic green material. For example, when the sintered ceramic type is oxide ceramic, hydrogen or a mixture of hydrogen and nitrogen is usually introduced to generate oxygen vacancies and reduce metal ions, thereby giving the oxide ceramic semiconductor characteristics. When the sintered ceramic type is non-oxide semiconductor, an inert atmosphere such as argon or nitrogen is usually introduced to prevent oxidation and promote densification. The critical atmosphere concentration is strongly correlated with the quality of the sintered semiconductor ceramic product. When the critical atmosphere concentration deviates from the target concentration of the critical gas, it indicates that there is a leak in the sintering apparatus. In this case, the holding time should be extended to compensate for the incomplete sintering caused by the decrease in atmosphere concentration, thereby ensuring the effectiveness of improving the reliability of semiconductor ceramic sintering.

[0038] The heating device current refers to the current of the heating device in the sintering apparatus, which is read by the processing terminal from the current sensor inside the heating device. By determining the heating device current, it is possible to determine whether the current of the heating device is within the normal operating current range, thereby identifying whether there is a fault in the heating device and effectively preventing uneven temperature field within the sintering apparatus.

[0039] Step S104: Analyze the critical atmosphere concentration to determine the corrected holding time.

[0040] The corrected holding time refers to the time obtained after correcting the basic holding time based on whether the sintering unit leaks. This time is obtained by analyzing the critical atmosphere concentration at the processing terminal. Specific methods are detailed in [reference needed]. Figure 2 The steps are as follows. By determining the correction holding time, the basic holding time can be adjusted according to whether there is air leakage in the sintering device, thereby effectively avoiding insufficient sintering caused by unstable atmosphere in the sintering device.

[0041] Step S105: Analyze the corrected heat preservation time and the current of the heating device to determine the actual heat preservation time and the fan movement path.

[0042] The actual holding time refers to the actual holding time during the sintering of semiconductor ceramics. It is obtained by the processing terminal after analyzing the corrected holding time and the current of the heating device. The specific method is described in [reference needed]. Figure 4 The steps are as follows. By determining the actual holding time, the uneven temperature field within the sintering apparatus caused by heating device malfunctions can be effectively avoided, thus preventing the reliability of the sintered semiconductor ceramic products from being affected.

[0043] The fan movement path refers to the path the fan follows during the sintering process of semiconductor ceramics. It is obtained by the processing terminal after analyzing the corrected holding time and the heating device current. For specific methods, please refer to [reference needed]. Figure 4 The steps involve determining the fan's movement path to increase the uniformity of the temperature field when the heating device malfunctions, thereby ensuring improved reliability of the sintered semiconductor ceramic product.

[0044] Step S106: Control the sintering device to sinter the preset ceramic green body according to the actual heat preservation time, fan movement path and preset ceramic sintering parameters to generate semiconductor ceramic finished product.

[0045] Semiconductor ceramic finished products refer to the finished products produced after the sintering device sintersects the ceramic green blanks. The processing terminal controls the sintering device to sinter the ceramic green blanks according to the actual holding time, fan movement path and ceramic sintering parameters, thereby effectively avoiding insufficient sintering due to unstable atmosphere or uneven temperature field during the sintering process, and thus ensuring the improvement of the reliability of semiconductor ceramic sintering.

[0046] Ceramic sintering parameters refer to the parameters used during the sintering of semiconductor ceramics, including fan speed, sintering heating rate, and sintering cooling rate, which are preset by the operator. Fan speed provides diffusion force for the heat generated by the heating device, the sintering heating rate controls the rate of temperature increase during the heating phase, and the sintering cooling rate controls the rate of temperature decrease after the holding phase to room temperature. By determining these ceramic sintering parameters, the sintering process can be controlled to facilitate the subsequent production of finished semiconductor ceramic products.

[0047] Ceramic green bodies refer to the ceramic raw materials used to make finished semiconductor ceramic products. The specific type is determined in advance by the operator.

[0048] Reference Figure 2 The steps for analyzing key atmosphere concentrations to determine the corrected holding time include: Step S200: Calculate the absolute value of the difference between the critical atmosphere concentration and the preset atmosphere target concentration to generate the critical atmosphere deviation.

[0049] The critical atmosphere deviation refers to the deviation between the concentration of the critical atmosphere in the sintering unit and the target concentration. It is obtained by calculating the absolute value of the difference between the critical atmosphere concentration and the target atmosphere concentration at the processing terminal. By determining the critical atmosphere deviation, it is possible to determine whether there is a gas leak in the sintering unit. In the event of a gas leak, the basic holding time can be compensated to effectively avoid the situation where the performance of the semiconductor ceramic product is affected by the unstable atmosphere.

[0050] The target atmosphere concentration refers to the concentration of the critical atmosphere that should be achieved under normal sintering conditions, which is set in advance by the operator. By determining the target atmosphere concentration, a benchmark is provided for the critical atmosphere concentration, which facilitates the subsequent determination of the corrected holding time.

[0051] Step S201: Determine whether the critical atmosphere deviation is less than the preset standard atmosphere deviation.

[0052] The standard atmosphere deviation refers to the concentration deviation during normal fluctuations of the atmosphere concentration in the sintering unit, which is set in advance by the operator. By judging whether the critical atmosphere deviation is less than the standard atmosphere deviation, it can be determined whether there is a gas leak in the current sintering unit. When the critical atmosphere deviation deviates significantly from the standard atmosphere deviation, it indicates that there is a gas leak in the sintering unit, so as to determine the correct holding time in the future.

[0053] Step S2011: If it is less than, then the preset basic heat preservation time is defined as the corrected heat preservation time.

[0054] If the critical atmosphere deviation is less than the standard atmosphere deviation, it means that the current atmosphere concentration fluctuation in the sintering unit is within the normal fluctuation range and there is no gas leakage in the sintering unit. Therefore, the processing terminal directly defines the basic heat preservation time as the corrected heat preservation time, thereby providing data support for determining the actual heat preservation time in the future.

[0055] The basic holding time refers to the holding time required for sintering semiconductor ceramics under normal conditions of the sintering apparatus, and is set in advance by the operator. By determining the basic holding time, a benchmark for adjusting the sintering time based on the state of the sintering apparatus is established, thus providing data support for determining the basic holding time.

[0056] Step S2012: If it is not less than, analyze the key atmosphere deviation and the preset basic insulation time to determine the corrected insulation time.

[0057] If the critical atmosphere deviation is not less than the standard atmosphere deviation, it indicates that the current atmosphere concentration fluctuation of the sintering unit is no longer within the normal fluctuation range. At this time, the sintering unit has experienced gas leakage. Therefore, the processing terminal determines the corrected holding time after analyzing the critical atmosphere deviation and the basic holding time. The specific method is as follows: Figure 3 The steps involve determining a corrected holding time to compensate for the base holding time based on the concentration of the critical atmosphere in the event of gas leakage in the sintering apparatus. This effectively avoids incomplete sintering due to atmospheric instability, thereby ensuring improved reliability of the finished semiconductor ceramic product.

[0058] The basic insulation time in this step is the same as the basic insulation time in step S2011.

[0059] The corrected holding time in this step is the same as the corrected holding time in step S2011. The difference is that the corrected holding time in this step is obtained by the processing terminal after analyzing the critical atmosphere deviation and the basic holding time.

[0060] Reference Figure 3 The steps for analyzing key atmosphere deviations and preset basic insulation times to determine corrected insulation times include: Step S300: Determine whether the critical atmosphere deviation is greater than the preset fault atmosphere deviation.

[0061] Among them, the fault atmosphere deviation refers to the critical value of the atmosphere concentration deviation when a serious gas leak occurs in the sintering unit, which is set in advance by the operator. By judging whether the critical atmosphere deviation is greater than the fault atmosphere deviation, it is determined whether the current critical atmosphere deviation exceeds the fault atmosphere deviation, thereby determining whether a gas leak fault has occurred in the sintering unit, so as to improve the reliability of the sintered semiconductor ceramic products.

[0062] Step S3001: If the value is greater than the preset air leakage warning information, output the preset air leakage warning information.

[0063] If the critical atmosphere deviation is greater than the fault atmosphere deviation, it indicates that the sintering device has a serious gas leak and the atmosphere concentration fluctuates greatly, which is not conducive to the sintering of semiconductor ceramics. Therefore, the processing terminal directly outputs a gas leak warning message to remind the operator to check and repair the sintering device.

[0064] Gas leakage warning information refers to alerts indicating a serious gas leak in the sintering unit, which is stored by the operator in the processing terminal. By identifying gas leakage warning information, operators can be promptly alerted when a serious gas leak in the sintering unit is insufficient to support the current sintering process, thereby effectively preventing incomplete sintering of semiconductor ceramics.

[0065] Step S3002: If it is not greater than, calculate the product of the critical atmosphere deviation and the preset leakage compensation coefficient to generate the atmosphere compensation time.

[0066] If the critical atmosphere deviation is no greater than the fault atmosphere deviation, it indicates a slight gas leak in the sintering unit. The impact of atmospheric concentration fluctuations on the sintering process can be compensated for by extending the sintering time. Therefore, the processing terminal calculates the product of the critical atmosphere deviation and the leak compensation coefficient to generate the atmosphere compensation time. By determining the atmosphere compensation time, when a slight gas leak occurs in the sintering unit, extending the holding time can effectively avoid the impact of atmospheric fluctuations on the sintering process, thereby ensuring and improving the reliability of the sintered semiconductor ceramic products.

[0067] The leakage compensation coefficient measures how much additional holding time is needed per unit concentration difference. It reflects the sensitivity of ceramic materials to atmosphere concentration and is determined by operators through controlled experiments beforehand. The controlled experiment begins with sintering under ideal atmosphere conditions to obtain the desired semiconductor ceramic performance. A second sintering is then performed, this time with the critical atmosphere concentration reduced by fine-tuning the sealing, without extending the sintering time. The semiconductor performance of the sintered product is recorded. This experiment is repeated with the same reduced atmosphere concentration, but with the sintering time gradually increased. The semiconductor performance of the sintered product is recorded each time until it matches the expected performance. The additional holding time in the final experiment is recorded. The leakage compensation coefficient is obtained by calculating the quotient of the additional holding time and the reduced critical atmosphere concentration. By determining the leakage compensation coefficient, the basic holding time can be compensated, effectively preventing incomplete sintering of the semiconductor ceramic.

[0068] Atmosphere compensation time refers to the extended holding time required when a slight gas leak occurs in the sintering apparatus. It is obtained by calculating the product of the critical atmosphere deviation and the leakage compensation coefficient at the processing terminal. By determining the atmosphere compensation time, the impact of atmosphere fluctuations on the sintering process can be effectively avoided by extending the holding time, thereby ensuring and improving the reliability of the sintered semiconductor ceramic products.

[0069] Step S30021: Calculate the sum of the atmosphere compensation time and the basic insulation time to generate the corrected insulation time.

[0070] In this process, after determining the atmosphere compensation time, the processing terminal calculates the sum of the atmosphere compensation time and the basic heat preservation time to generate a corrected heat preservation time. This corrected heat preservation time is then used to compensate for the basic heat preservation time when a slight gas leak occurs in the sintering device, thereby effectively preventing insufficient sintering of semiconductor ceramics and improving the reliability of the finished semiconductor ceramic products.

[0071] Reference Figure 4 The steps for analyzing the corrected heat preservation time and heating device current to determine the actual heat preservation time and fan movement path include: Step S400: Obtain the current temperature peak value and the current temperature valley value.

[0072] The current peak temperature refers to the maximum temperature inside the sintering device, which is read by the processing terminal from the temperature sensor inside the sintering device.

[0073] The current temperature valley value refers to the minimum temperature inside the sintering device, which is read by the processing terminal from the temperature sensor inside the sintering device.

[0074] By determining the current temperature peak and the current temperature trough, the temperature difference within the sintering device can be determined. The larger the temperature difference within the sintering device, the worse the uniformity of the temperature field within the sintering device, which facilitates the subsequent determination of redundant holding time.

[0075] Step S401: Analyze the current temperature peak and current temperature trough to determine the redundant heat preservation time.

[0076] The redundant holding time refers to the time that is added or reduced during the sintering process based on the fan speed and the uniformity of the temperature field. It is obtained by analyzing the current temperature peak and valley values ​​at the processing terminal. For specific methods, please refer to [reference needed]. Figure 5 The steps are as follows. When the heating device in the sintering apparatus is functioning correctly, the moving and purging fan accelerates the uniformity of the temperature field. Therefore, the holding time during sintering can be reduced based on the redundant holding time to improve the sintering efficiency of semiconductor ceramics. When the heating device in the sintering apparatus malfunctions, the heat source decreases, thus reducing the uniformity of the temperature field. Therefore, the holding time during sintering can be increased based on the redundant holding time to effectively avoid incomplete sintering due to uneven temperature.

[0077] Step S402: Determine whether the current of the heating device meets the preset normal operating current range.

[0078] The normal operating current refers to the current of the heating device during normal operation. The range of the normal operating current is defined as the range within which the operator sets the current in advance. By determining whether the heating device current is within the range of the normal operating current, it is possible to determine whether the heating device has malfunctioned, which will then help determine the actual heat preservation time and the fan movement path.

[0079] Step S4021: If the conditions are met, calculate the difference between the corrected insulation time and the redundant insulation time to generate the actual insulation time, and define the preset loop movement path as the fan movement path.

[0080] If the heating device current is within the normal operating current range, it indicates that the heating device is not faulty. In this case, the moving and purging of the fan can improve the uniformity of the temperature field. If sintering continues with the corrected holding time, over-sintering will occur. Therefore, the processing terminal calculates the difference between the corrected holding time and the redundant holding time to generate the actual holding time, and defines the loop moving path as the fan moving path. Thus, under normal operating conditions of the heating device, the moving and purging of the fan can improve the uniformity of the temperature field in the sintering device, thereby improving the sintering efficiency of semiconductor ceramics.

[0081] The loop movement path refers to the closed-loop movement path of the fan, which is formed by connecting multiple single paths to create two closed-loop trajectories. For example, if the sintering device is square, the two closed-loop trajectories are perpendicular to each other and located on the rectangular closed-loop trajectory formed by the midpoints of the two sets of parallel sides of the sintering device. Each set of parallel sides includes four parallel sides of the sintering device, and these four parallel sides are parallel to the horizontal plane, not perpendicular to it. Two fans are installed at the midpoints of two adjacent edges at the top of the inner wall of the sintering device. The two fans move in a closed loop along a slide rail at the centerline of the inner wall of the sintering device, thereby uniformly distributing the temperature to different areas of the sintering device and improving the sintering efficiency of semiconductor ceramics. Note that the centerline of the side wall perpendicular to the horizontal plane refers to a centerline perpendicular to the horizontal plane, not a centerline parallel to it.

[0082] Step S4022: If it does not meet the requirements, then obtain the position of the heating device corresponding to the heating device current.

[0083] If the heating device current is outside the normal operating current range, it indicates that the heating device has malfunctioned. In this case, although the moving and blowing of the fan can improve the uniformity of the temperature field, the malfunction of the heating device will also increase the degree of non-uniformity of the temperature field. Therefore, it is necessary to extend the time to ensure that the semiconductor ceramic is fully sintered, and to determine different moving paths of the fan according to the location of the heating device malfunction in order to achieve a better uniform temperature field effect. Therefore, the processing terminal obtains the heating device position corresponding to the heating device current in order to determine the fan moving path in the future.

[0084] The heating device location refers to the position of the heating device corresponding to the heating device current, which is obtained by the processing terminal after determining the location of the current sensor corresponding to the source of the heating device current data. By determining the heating device location, the position of the faulty heating device within the sintering unit can be determined, and then the movement path of the fan can be determined based on the location of the fault, so as to better improve the uniformity of the temperature field within the sintering unit.

[0085] Step S40221: Analyze the redundant heat preservation time, the location of the heating device, and the corrected heat preservation time to determine the actual heat preservation time and the fan movement path.

[0086] In this process, after the processing terminal determines the location of the heating device, it analyzes the redundant heat preservation time, the location of the heating device, and the corrected heat preservation time to determine the actual heat preservation time and the fan movement path. The specific method is described in [reference needed]. Figure 6The steps involve determining the actual holding time and fan movement path to extend the holding time in case of heating device failure, effectively preventing insufficient sintering of semiconductor ceramics. Furthermore, adjusting the fan movement and purging path based on the location of the heating device failure further enhances the uniformity of the temperature field within the sintering apparatus, thereby improving the reliability of the finished semiconductor ceramic product.

[0087] The actual heat preservation time and fan movement path in this step are the same as those in step S4021. The difference is that the actual heat preservation time and fan movement path in this step are obtained by the processing terminal after analyzing the redundant heat preservation time, the position of the heating device, and the corrected heat preservation time.

[0088] Reference Figure 5 The steps for analyzing the current temperature peak and current temperature trough to determine the redundant insulation time include: Step S500: Calculate the difference between the current temperature peak and the current temperature trough to generate the current temperature deviation.

[0089] The current temperature deviation refers to the difference between the highest and lowest temperatures within the sintering unit, calculated by the processing terminal as the difference between the current temperature peak and the current temperature trough. A larger current temperature deviation indicates a poorer uniformity of the temperature field within the sintering unit, which facilitates subsequent determination of the uniform temperature deviation.

[0090] Step S501: Calculate the difference between the current temperature deviation and the preset reference temperature deviation to generate a uniform temperature deviation.

[0091] The uniform temperature deviation refers to the degree of deviation between the current temperature deviation within the sintering unit and the temperature deviation under uniform temperature conditions. It is obtained by calculating the difference between the current temperature deviation and the reference temperature deviation from the reference temperature deviation using the processing terminal. By determining the uniform temperature deviation, the degree of deviation between the current temperature deviation within the sintering unit and the temperature deviation under uniform temperature conditions is determined, thereby providing data support for subsequently determining the redundant holding time.

[0092] The reference temperature deviation refers to the deviation between the highest and lowest temperatures when the temperature field within the sintering apparatus is uniform, and it is pre-set by the operator. By determining the reference temperature deviation, the extent to which the temperature exceeds the reference temperature deviation when the temperature field is non-uniform can be determined, and time compensation can be performed on the excess portion to facilitate the subsequent determination of redundant holding time.

[0093] Step S502: Calculate the product of the uniform temperature deviation and the preset rotation speed uniformity coefficient to generate redundant heat preservation time.

[0094] In this process, after determining the uniform temperature deviation, the processing terminal calculates the product of the uniform temperature deviation and the rotation speed uniformity coefficient to generate a redundant holding time. Thus, when adjusting the holding time, the uniformity of the temperature field is considered, along with the gain effect brought by the fan movement and purging. This improves the control accuracy of the semiconductor ceramic sintering time and ensures the reliability of the finished semiconductor ceramic product.

[0095] The rotational speed uniformity coefficient measures the impact of each additional unit temperature deviation under the influence of fan movement on the sintering holding time. It is obtained through controlled experiments conducted by the operator beforehand. The controlled experiments first involve sintering at a preset fan speed in a sintering apparatus without malfunctions, recording the quality of the sintered product. Then, at the same rotational speed, control experiments are conducted by reducing the number of operating heating elements and increasing the sintering holding time, recording the quality of the sintered product after each experiment. A curve is then fitted using the sintered product quality and sintering holding time to find the sintering holding time corresponding to the target product quality. Finally, the rotational speed uniformity coefficient is determined based on the temperature deviation and sintering holding time in the control experiments corresponding to the target product quality. By determining the rotational speed uniformity coefficient, the required increase or decrease in holding time can be determined based on the uniformity of the temperature field and the gain effect of fan movement. The increase or decrease in holding time depends on whether the heating elements malfunction. When the heating device in the sintering apparatus is functioning correctly, the fan speed accelerates the uniformity of the temperature field. Therefore, the holding time during sintering can be reduced based on the redundant holding time to improve the sintering efficiency of semiconductor ceramics. When the heating device in the sintering apparatus malfunctions, the uniformity of the temperature field decreases. Therefore, the holding time during sintering can be increased based on the redundant holding time to effectively avoid incomplete sintering due to uneven temperature.

[0096] Reference Figure 6 The steps for analyzing redundant insulation time, heating device location, and corrected insulation time to determine the actual insulation time and fan movement path include: Step S600: Calculate the sum of the corrected insulation time and the redundant insulation time to generate the actual insulation time.

[0097] The processing terminal calculates the sum of the corrected holding time and the redundant holding time to generate the actual holding time. In the event of a malfunction in the heating device, extending the holding time during sintering can effectively prevent insufficient sintering of semiconductor ceramics, thereby ensuring and improving the reliability of the sintered semiconductor ceramic products.

[0098] Step S601: Determine whether the heating device is located at the preset side wall heating position or the preset top heating position.

[0099] The processing terminal determines the location of the heating device malfunction by judging whether the heating device is located on the side wall or at the top. Then, it determines different fan movement and purging paths based on the different locations to better accelerate the uniformity of the temperature field in the sintering device.

[0100] The side wall heating position refers to the location of the heating device on the side of the sintering unit, which is stored by the operator in the processing terminal.

[0101] The top heating position refers to the position of the heating device located at the top of the sintering unit, which is stored by the operator in the processing terminal.

[0102] By determining the sidewall heating position and the top heating position, different fan movement paths can be determined according to different locations of heating device failures, so as to better accelerate the uniformity rate of the temperature field in the sintering device, thereby ensuring and improving the reliability of semiconductor ceramic products.

[0103] Step S6011: If it is a top heating position, the preset loop movement path is defined as the fan movement path.

[0104] When the processing terminal determines that the heating device is the top heating device, the top heating device has already malfunctioned, leaving only the heating devices around the sintering device to work. Therefore, the processing terminal directly defines the loop movement path as the fan movement path, so that the two fans move in a closed loop along the slide rail at the center line of the inner wall of the sintering device to blow, thereby spreading the temperature evenly to different areas of the sintering device.

[0105] The loop movement path in this step is the same as the loop movement path in step S4021.

[0106] Step S6012: If it is a side wall heating position, analyze the position of the heating device to determine the fan movement path.

[0107] When the processing terminal determines that the heating device is located at the side wall heating position, the processing terminal analyzes the position of the heating device and determines the fan movement path. The specific method is described in [reference needed]. Figure 7 The steps involve determining the fan's movement path based on the positional relationship of the heating device on the side wall, thereby uniformly distributing the temperature to different areas of the sintering device to ensure improved reliability of the semiconductor ceramic product.

[0108] The fan movement path in this step is the same as that in step S6011. The difference is that the fan movement path in this step is obtained by the processing terminal after analyzing the position of the heating device.

[0109] Reference Figure 7 The steps for analyzing the location of the heating device to determine the fan's movement path include: Step S700: Determine whether the heating device position is a preset single heating position or a preset dual heating position.

[0110] The process involves determining whether the heating device is in a single-heating or dual-heating position to ascertain the number of malfunctioning sintering units on the side wall of the sintering unit. Based on this number, different fan movement paths are determined. Before sintering begins, operators inspect the sintering unit. If three or more heating devices malfunction, the sintering unit is insufficient to support the sintering process of the semiconductor ceramic. Therefore, this step only considers the case of one or two malfunctioning heating devices. If three malfunctioning sintering devices are detected, an alarm is immediately triggered to prompt the operator to inspect and repair the sintering unit.

[0111] A single heating location refers to a situation where only one heating device in the side wall of the sintering apparatus fails, and this is stored in the processing terminal by the operator. By identifying the single heating location, one of the fans is moved back and forth along the slide rail on the opposite side of the heating device location to blow away the heat generated by the opposite heating device, thereby transferring the heat generated by the opposite heating device to the faulty side and improving the reliability of the finished semiconductor ceramic product.

[0112] A dual-heating position refers to a situation where two heating devices on the side wall of the sintering unit malfunction, a condition stored by the operator in the processing terminal. By identifying the dual-heating position, the fan's purging path can be determined based on the positional relationship between the two heating devices, facilitating the subsequent determination of the fan's movement path.

[0113] Step S7001: If it is a single heating position, the single-sided path of the fan is determined according to the position of the heating device and the preset single-sided movement correspondence.

[0114] If the heating device is in a single heating position, it means that one of the heating devices on the side wall of the sintering device has malfunctioned. In this case, one of the fans is moved back and forth at the slide rail on the center line opposite the heating device to blow away the heat generated by the opposite heating device to the faulty side. Therefore, the processing terminal determines the single-sided path of the fan according to the correspondence between the heating device position and the single-sided movement, so as to facilitate the subsequent determination of the fan movement path.

[0115] The one-sided movement correspondence refers to the correspondence between the position of the heating device and the one-sided movement path. That is, when one of the heating devices on the side wall of the sintering device fails, the corresponding one-sided movement path is to move back and forth on the slide rail on the opposite side of the side where the failed heating device is located. For example, if the heating device on the left side of the sintering device fails, the fan moves on the slide rail at the center line of the right side wall to blow away the heat generated by the heating device on the right side wall to the left side. The operator will form a mapping table by matching the position of the heating device with the one-sided movement path.

[0116] A single-sided fan path refers to the path along which the fan moves and blows only on one side of the sintering apparatus during the sintering process. This path is determined by the processing terminal using a mapping table of single-sided movement correspondences based on the location of the heating devices. By determining the single-sided fan path, the heat generated by the heating device on the opposite side of the faulty side can be transferred to the faulty side, thereby improving the reliability of the finished semiconductor ceramic product.

[0117] Step S70011: Associate the fan single-sided path with the preset adjacent loop path to generate the fan movement path.

[0118] In this process, after determining the single-sided path of the fan, the processing terminal associates the single-sided path and the adjacent loop path to generate the fan movement path. This allows one fan to reciprocate along the slide rail on the opposite side of the heating device, thus transferring the heat generated by the opposite heating device to the faulty side. Meanwhile, the other fan continues its closed-loop movement along the slide rail, improving the reliability of the semiconductor ceramic product. For example, when the heating device on the left side of the sintering unit fails, one fan reciprocates along the slide rail on the center line of the right wall, while the other fan performs a closed-loop movement along the center lines of the front, lower, rear, and upper walls of the sintering unit.

[0119] The adjacent-side loop path refers to a closed-loop moving and blowing path on the inner wall adjacent to the location of the heating device failure. It is formed by connecting multiple single paths to create a closed-loop trajectory, which is pre-set by the operator. By determining the adjacent-side loop path, when one side of the heating device fails, another fan can perform cyclical moving and blowing on the adjacent side of the failure, thereby blowing the heat generated by the normal heating device on the adjacent side to different areas of the sintering device, thus improving the reliability of the semiconductor ceramic product.

[0120] Step S7002: If it is a dual heating position, then obtain the positional installation relationship of the heating device.

[0121] If the heating device is a dual heating position, it means that two heating devices on the side wall of the sintering device have failed. In this case, it is necessary to determine the movement and purging path of the fan based on the installation positions of the two failed heating devices. Therefore, the processing terminal directly obtains the position and installation relationship of the heating devices to facilitate the subsequent determination of the fan movement path.

[0122] The positional installation relationship refers to the positional relationship between two faulty heating devices, determined by the processing terminal based on the position of the heating device on the side wall of the sintering apparatus. By determining the positional installation relationship, it can be determined whether the two heating devices are installed opposite or adjacent to each other, and then the fan's movement and purging path can be determined based on the different positional relationships, in order to facilitate the subsequent determination of the fan's movement path.

[0123] Step S70021: Determine whether the installation position relationship is a preset opposing installation relationship or a preset adjacent installation relationship.

[0124] The processing terminal determines whether the installation relationship is opposing or adjacent, and then determines different fan movement paths based on the different positional relationships. This maximizes the spread of heat generated by the normal heating device to different areas of the sintering device, thereby effectively improving the uniformity of the temperature field within the sintering device.

[0125] Opposite installation relationship refers to the installation relationship of heating devices on two opposite sides of the sintering unit. For example, the faulty heating devices may be located on the left and right sides of the sintering unit, and this information is stored in the processing terminal by the operator. By determining the opposite installation relationship, different movement paths of the fan can be determined according to the different locations of the fault, thereby ensuring that the heat generated by the normal heating device is transferred to the faulty side.

[0126] Adjacent installation relationship refers to the installation relationship between heating devices on two adjacent sides of the sintering unit. For example, if a faulty heating device is located on the left or front side, this information is stored in the processing terminal by the operator. By determining the adjacent installation relationship, different movement paths of the fan can be determined according to the different locations of the fault, thereby ensuring that the heat generated by the normal heating device is distributed to different areas of the sintering unit.

[0127] Step S700211: If the installation relationship is opposing, the preset loop movement path is defined as the fan movement path.

[0128] If the installation position is opposite, it means that the heating device is installed on opposite sides, such as the left and right sides. In this case, the processing terminal directly defines the loop movement path as the fan movement path, so that the two fans move in a closed loop along the slide rail at the center line of the inner wall of the sintering device to blow, thereby spreading the temperature evenly to different areas of the sintering device, so as to improve the sintering efficiency of semiconductor ceramics and thus ensure the reliability of the finished semiconductor ceramic products.

[0129] The loop movement path in this step is the same as the loop movement path in step S4021.

[0130] Step S700212: If the installation is adjacent, the fan movement path is determined according to the position of the heating device and the preset adjacent single-sided movement correspondence.

[0131] If the installation positions are adjacent, the processing terminal determines the fan movement path based on the position of the heating device and the correspondence between adjacent single-sided movements. This allows the two fans to reciprocate and blow on the slide rails at the center line of the opposite sides of the two heating device positions, thereby maximizing the blowing of heat generated by the normal heating device to the fault side and ensuring improved reliability of the semiconductor ceramic product.

[0132] The correspondence between adjacent single-sided movements refers to the correspondence between the position of the heating device and the adjacent single-sided movement path. For example, if the heating device is located on the left and front sides, the two fans will move back and forth on the slide rails at the center line on the right and rear sides respectively to blow, thereby effectively spreading the heat generated by the normal heating device to the fault side. The operator will form a mapping table by matching the position of the heating device with the adjacent single-sided movement path.

[0133] The fan movement path in this step is the same as in step S700211. The difference is that in this step, the fan movement path is obtained by the processing terminal by looking up the mapping table of adjacent single-sided movement correspondences based on the position of the heating device.

[0134] Based on the same inventive concept, embodiments of this application provide a semiconductor ceramic sintering time control system, including: The acquisition module is used to acquire system trigger signals, atmosphere start signals, heating completion signals, key atmosphere concentrations, heating device current, current temperature peak value, current temperature valley value, heating device location, and location installation relationship. A memory for storing a program for controlling the sintering time of semiconductor ceramics; The processor can load and execute programs in memory to implement a method for controlling the sintering time of semiconductor ceramics.

[0135] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional modules is used as an example. In practical applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. The specific working process of the system, device, and unit described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0136] This application provides a computer-readable storage medium storing a computer program that can be loaded by a processor and executed as a method for controlling the sintering time of semiconductor ceramics.

[0137] Computer storage media include, for example, USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, optical disks, and other media that can store program code.

[0138] Based on the same inventive concept, embodiments of this application provide a smart terminal, including a memory and a processor, wherein the memory stores a computer program that can be loaded and executed by the processor to control the sintering time of semiconductor ceramics.

[0139] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional modules is used as an example. In practical applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. The specific working process of the system, device, and unit described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0140] The above are all preferred embodiments of this application and are not intended to limit the scope of protection of this application. Any feature disclosed in this specification (including the abstract and drawings) may be replaced by other equivalent or similar features unless specifically stated otherwise. That is, unless specifically stated otherwise, each feature is only one example of a series of equivalent or similar features.

Claims

1. A method for controlling the sintering time of semiconductor ceramics, characterized in that, include: Obtain system trigger signals; Based on the system trigger signal, the preset ventilation device is controlled to introduce atmosphere into the preset sintering device, and the atmosphere start signal is obtained. The sintering apparatus is heated to a preset reference sintering temperature based on the atmosphere start signal, and a heating completion signal is obtained. The key atmosphere concentration and heating device current are obtained based on the heating completion signal; Analyze the key atmosphere concentrations to determine the corrected holding time; The corrected heat preservation time and heating device current are analyzed to determine the actual heat preservation time and fan movement path; The sintering device is controlled to sinter the preset ceramic green body according to the actual heat preservation time, the fan movement path and the preset ceramic sintering parameters to produce semiconductor ceramic finished products. The steps for analyzing key atmosphere concentrations to determine the corrected holding time include: Calculate the absolute value of the difference between the critical atmosphere concentration and the preset atmosphere target concentration to generate the critical atmosphere deviation; Determine whether the critical atmosphere deviation is less than the preset standard atmosphere deviation; If it is less than the preset basic insulation time, then the corrected insulation time will be defined as the basic insulation time. If it is not less than, then the critical atmosphere deviation and the preset basic insulation time are analyzed to determine the corrected insulation time; The steps for analyzing key atmosphere deviations and preset baseline insulation times to determine corrected insulation times include: Determine whether the critical atmosphere deviation is greater than the preset fault atmosphere deviation; If the value is greater than the preset leak warning message, output the preset leak warning message. If it is not greater than, then calculate the product of the critical atmosphere deviation and the preset leakage compensation coefficient to generate the atmosphere compensation time. Calculate the sum of the atmosphere compensation time and the basic insulation time to generate the corrected insulation time; The steps for analyzing the corrected heat preservation time and heating device current to determine the actual heat preservation time and fan movement path include: Get the current peak temperature and the current trough temperature; Analyze the current temperature peak and current temperature trough to determine the redundant insulation time; Determine whether the current of the heating device meets the preset normal operating current range; If the conditions are met, the difference between the corrected insulation time and the redundant insulation time is calculated to generate the actual insulation time, and the preset loop movement path is defined as the fan movement path. If it does not match, then obtain the position of the heating device corresponding to the heating device current; The redundant insulation time, heating device location, and corrected insulation time are analyzed to determine the actual insulation time and fan movement path.

2. The method for controlling the sintering time of semiconductor ceramics according to claim 1, characterized in that, The steps for analyzing the current temperature peak and current temperature trough to determine the redundant insulation time include: Calculate the difference between the current temperature peak and the current temperature trough to generate the current temperature deviation; Calculate the difference between the current temperature deviation and the preset reference temperature deviation to generate a uniform temperature deviation; Calculate the product of the uniform temperature deviation and the preset rotation speed uniformity coefficient to generate redundant heat preservation time.

3. The method for controlling the sintering time of semiconductor ceramics according to claim 2, characterized in that, The steps for analyzing redundant insulation time, heating device location, and corrected insulation time to determine the actual insulation time and fan movement path include: Calculate the sum of the corrected insulation time and the redundant insulation time to generate the actual insulation time; Determine whether the heating device is located at the preset side wall heating position or the preset top heating position; If it is a top heating position, the preset loop movement path will be defined as the fan movement path; If the heating element is located on the side wall, the position of the heating device is analyzed to determine the fan's movement path.

4. The method for controlling the sintering time of semiconductor ceramics according to claim 3, characterized in that, The steps for analyzing the location of the heating device to determine the fan's movement path include: Determine whether the heating device is in a preset single heating position or a preset dual heating position; If it is a single heating position, the single-sided path of the fan is determined according to the position of the heating device and the preset single-sided movement correspondence. Associate the fan's single-sided path with the preset adjacent loop path to generate the fan's movement path; If there are two heating positions, then obtain the positional installation relationship of the heating device. Determine whether the installation position relationship is a preset opposing installation relationship or a preset adjacent installation relationship; If the installation is in a conflicting relationship, the preset loop movement path will be defined as the fan movement path. If the installations are adjacent, the fan movement path is determined based on the location of the heating device and the preset correspondence between adjacent single-sided movements.

5. A semiconductor ceramic sintering time control system, characterized in that, include: The acquisition module is used to acquire system trigger signals, atmosphere start signals, heating completion signals, key atmosphere concentrations, and heating device current. A memory for storing a program for controlling the sintering time of semiconductor ceramics as described in any one of claims 1 to 4; The processor and the program in the memory can be loaded and executed by the processor to implement the semiconductor ceramic sintering time control method as described in any one of claims 1 to 4.

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