Equipment for detecting surface defects in crystal ingots and methods for detecting and treating surface defects in crystal ingots

CN122567701APending Publication Date: 2026-08-14BYD CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-10-09
Publication Date
2026-08-14

AI Technical Summary

Technical Problem

[0006]本申请提供了一种晶锭表面缺陷检测设备及晶锭表面缺陷检测处理方法,以解决相关技术中对晶锭表面缺陷进行检测时容易漏检的技术问题

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN122567701A_ABST
    Figure CN122567701A_ABST
Patent Text Reader

Abstract

This application relates to a crystal ingot surface defect detection device and a crystal ingot surface defect detection and processing method. The crystal ingot surface defect detection device includes: a light source configured to emit a light beam toward a target detection position on the crystal ingot surface; and a light acquisition device configured to receive scattered light from the target detection position on the crystal ingot. The distance between the lens of the light acquisition device and the crystal ingot is not less than 100 mm, and the field of view of the lens on the crystal ingot surface is not less than 10 mm. The crystal ingot surface defect detection device of this application solves the technical problem of easy omission when detecting crystal ingot surface defects in related technologies.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This application relates to the field of crystal ingot surface defect detection technology, and in particular to a crystal ingot surface defect detection device and a crystal ingot surface defect detection and processing method. Background Technology

[0002] In chip manufacturing, ingot fabrication is a preliminary step before wafer production, and the quality of the ingot directly affects the quality of the subsequently produced wafers. Defects in the ingot will lead to defects in the diced wafers, thus impacting the performance of the final chip. For example, in SiC ingots, due to the high-temperature growth environment and the high rigidity and chemical stability of SiC, the grown ingots are prone to high-density crystals and surface defects. This results in poor quality substrates and subsequent epitaxial layers, affecting the quality of the processed wafers and chips.

[0003] In related technologies, when detecting defects on the surface of a crystal ingot, a light source can be used to illuminate the surface of the crystal ingot and collect the reflected light from the surface of the crystal ingot. The surface defects of the crystal ingot can be detected based on the reflected light. However, this detection method has poor accuracy in areas with large undulations and tilts on the surface of the crystal ingot, and it is easy to miss the detection, which will have an adverse effect on the quality of the wafers and chips processed in subsequent processes.

[0004] It is evident that the relevant technologies suffer from the technical problem of easily missing defects when detecting defects on the surface of crystal ingots, and no effective solution has yet been proposed to address this issue.

[0005] The information disclosed in the background section is only intended to enhance the understanding of the background art described herein. Therefore, the background art may contain information that would not be considered part of the prior art by those skilled in the art. Summary of the Invention

[0006] This application provides a crystal ingot surface defect detection device and a crystal ingot surface defect detection and processing method to solve the technical problem of easy omission when detecting crystal ingot surface defects in related technologies.

[0007] To achieve the above objectives, according to a first aspect of the present application, a crystal ingot surface defect detection device is provided. The crystal ingot surface defect detection device includes: a light source configured to emit a light beam toward a target detection position on the crystal ingot surface; and a light acquisition device configured to receive scattered light from the target detection position on the crystal ingot, wherein the distance between the lens of the light acquisition device and the crystal ingot is not less than 100 mm, and the field of view of the lens on the crystal ingot surface is not less than 10 mm.

[0008] Optionally, the light source is configured to emit beams from multiple directions toward the target detection location.

[0009] Optionally, the light source includes multiple light-emitting components, which are positioned at different locations, and the light emitted by each light-emitting component is directed toward the target detection position.

[0010] Optionally, the light source includes: a light-emitting component; a beam-splitting component configured to split light from the light-emitting component into two beams; and a reflective component reflecting at least one beam of light split by the beam-splitting component so that the two beams of light split by the beam-splitting component illuminate the target detection position from different directions.

[0011] Optionally, the structure of the light source satisfies at least one of the following: the light-emitting component is a laser; the light source includes a lens assembly and a shaping component, and the lens assembly, shaping component, and beam-splitting component are arranged sequentially along the light path direction emitted by the light-emitting component, wherein the lens assembly is configured to expand the light emitted by the light-emitting component, and the shaping component is configured to shape the beam obtained after beam expansion to increase the uniformity of brightness at various points in the beam; the light source includes an optical path transmission component, which is disposed between the reflector and the ingot, and at least one of the two beams split by the beam-splitting component passes through the optical path transmission component to adjust the transmission direction of the beam through the optical path transmission component.

[0012] Optionally, there are multiple light-collecting devices, which are configured to receive scattered light from the target detection location of the crystal ingot from multiple directions.

[0013] Optionally, the crystal ingot surface defect detection device includes: a first polarization component configured to polarize and modulate the light beam emitted by the light source so that the light beam directed toward the target detection position has a preset polarization direction; and a second polarization component configured to polarize and filter the light collected by the light acquisition device to filter out reflected light from the crystal ingot and retain scattered light from the crystal ingot.

[0014] Optionally, when the ingot surface defect detection device is the ingot surface defect detection device described above, the first polarization component and the beam splitting component are integrated into a single structure, which is a polarization beam splitting element. The polarization beam splitting element splits the light from the light-emitting component into two beams of light with different polarization directions. The light source also includes a phase retarder, and one beam of light split by the polarization beam splitting element passes through the phase retarder to adjust the polarization direction of the beam of light so that it is the same as the polarization direction of the other beam of light split by the polarization beam splitting element.

[0015] Optionally, the ingot surface defect detection equipment meets at least one of the following criteria: the ingot surface defect detection equipment includes a motion platform for carrying the ingot, the motion platform being movably set to change the target detection position of the ingot; the depth of field of the lens is not less than 1 mm; the ingot surface defect detection equipment includes a display device, the display device being communicatively connected to a light acquisition device, the display device being configured to display an image corresponding to the scattered light acquired by the light acquisition device; the ingot surface defect detection equipment includes a processor, the processor being communicatively connected to the light acquisition device, the processor being configured to determine the defect area and / or defect type on the surface of the ingot based on the scattered light acquired by the light acquisition device.

[0016] According to a second aspect of this application, a method for detecting and processing defects on the surface of a crystal ingot is also provided. The method includes: controlling a light source to emit a light beam toward a target detection position on the surface of the crystal ingot; and using a light acquisition device to receive scattered light from the target detection position on the crystal ingot, wherein the distance between the lens of the light acquisition device and the crystal ingot is not less than 100 mm, and the field of view of the lens on the surface of the crystal ingot is not less than 10 mm.

[0017] Optionally, the ingot surface defect detection method satisfies at least one of the following: controlling a light source to emit a light beam toward a target detection position on the ingot, including: controlling the light source to emit light beams toward the target detection position from multiple directions; using a light acquisition device to receive scattered light from the target detection position on the ingot, including: using multiple light acquisition devices to receive scattered light from the target detection position on the ingot from multiple directions; controlling the light source to emit a light beam toward the target detection position on the ingot, including: using a first polarization component to polarize the light beam emitted by the light source so that the light beam directed toward the target detection position has a preset polarization direction; using a light acquisition device to receive scattered light from the target detection position on the ingot. The method for detecting scattered light at a specific location includes: using a second polarization component to polarize and filter the light collected by the light acquisition device to filter out reflected light from the ingot and retain scattered light from the ingot; the method for detecting surface defects on the ingot also includes: controlling the movement of the motion platform carrying the ingot to change the target detection position of the ingot; the method for detecting surface defects on the ingot also includes: controlling the display device to display the image corresponding to the scattered light collected by the light acquisition device; the method for detecting surface defects on the ingot also includes: using preset judgment logic or machine learning technology to determine the defect area and / or defect type on the surface of the ingot based on the scattered light collected by the light acquisition device.

[0018] The ingot surface defect detection device of this application embodiment includes: a light source configured to emit a light beam toward a target detection position on the ingot surface; and a light acquisition device configured to receive scattered light from the target detection position on the ingot, wherein the distance between the lens of the light acquisition device and the ingot is not less than 100 mm, and the field of view of the lens on the ingot surface is not less than 10 mm. The ingot surface defect detection device with this structural design emits a light beam toward the target detection position on the ingot surface through the light source and acquires the scattered light from the ingot surface through the light acquisition device. The lens of the light acquisition device is configured such that the distance between it and the ingot is not less than 100 mm, and its field of view on the ingot surface is not less than 10 mm. Because the equipment uses scattered light for defect detection, even if the defects on the surface of the crystal ingot have large undulations or tilt angles, the scattered light will still scatter in all directions. With the lens of the above-mentioned observation distance and field of view, the scattered light from various defect locations on the crystal ingot can be effectively collected. Thus, the defects on the surface of the crystal ingot can be detected based on the scattered light, avoiding the omission of defects in locations with large undulations or tilt angles. This solves the technical problem of easy omission when detecting defects on the surface of crystal ingots in related technologies.

[0019] Other features and advantages of this application will be described in detail in the following detailed description section. Attached Figure Description To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0021] Figure 1 This is a schematic diagram of the structure of the crystal ingot surface defect detection device according to an embodiment of this application; Figure 2 This is a schematic diagram of the structure of one embodiment of the crystal ingot surface defect detection device of this application; Figure 3 This is a schematic diagram of another embodiment of the crystal ingot surface defect detection device of this application; Figure 4 This is a schematic flowchart of the crystal ingot surface defect detection and processing method according to an embodiment of this application.

[0022] Explanation of reference numerals in the attached figures: 1. Light source; 11. Light-emitting component; 12. Beam splitter; 13. Reflector; 14. Lens assembly; 15. Shaping component; 16. Optical path transmission component; 17. Phase retardation film; 2. Light-gathering device; 21. Lens; 3. First polarization component; 4. Second polarization component; 5. Exercise platform; 6. Display device; 7. Processor; 100. Crystal ingot. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0024] The structure of this application will be described in detail below with reference to the accompanying drawings.

[0025] See Figures 1 to 4 According to embodiments of this application, a crystal ingot surface defect detection device and a crystal ingot surface defect detection and processing method are provided.

[0026] The applicant's research found that the defect detection scheme based on reflected light from the crystal ingot surface in the relevant technology is prone to missing defects because the beam range of the reflected light is relatively concentrated. For defects with large undulations and large tilts (such as at the edge of the crystal ingot), since the solid angle of the lens collecting light is limited, the light reflected from the defects at these locations is easy to exceed the solid angle range of the lens collecting light, thus causing signal loss and missing detection. This makes the detection accuracy of crystal ingot surface defects poor.

[0027] like Figures 1 to 3 As shown, in order to solve the above-mentioned technical problems, the crystal ingot surface defect detection device of this application embodiment includes: a light source 1, which is configured to emit a light beam toward a target detection position on the surface of the crystal ingot 100; and a light acquisition device 2, which is configured to receive scattered light from the target detection position of the crystal ingot 100, wherein the distance between the lens 21 of the light acquisition device 2 and the crystal ingot 100 is not less than 100mm, and the field of view of the lens 21 on the surface of the crystal ingot 100 is not less than 10mm.

[0028] The crystal ingot surface defect detection device with this structural design emits a light beam from a light source 1 towards the target detection position on the surface of the crystal ingot 100, and collects the scattered light from the surface of the crystal ingot 100 through a light acquisition device 2. The lens 21 of the light acquisition device 2 is configured such that the distance between it and the crystal ingot 100 is not less than 100mm and its field of view on the surface of the crystal ingot 100 is not less than 10mm. Since the device uses scattered light for defect detection, even if the defects on the local position of the crystal ingot surface have large undulations or tilt angles, the scattered light will still scatter in all directions. With the lens 21 of the above-mentioned observation distance and field of view angle, the scattered light from various defect positions on the crystal ingot 100 can be effectively collected. Thus, the crystal ingot surface defects can be detected based on the scattered light, avoiding the omission of defects in positions with large undulations or tilt angles, and solving the technical problem of easy omission when detecting crystal ingot surface defects in related technologies.

[0029] Specifically, defects on the surface of ingot 100 may include, but are not limited to: scratches, cracks, chipping, pits, impurities, microtubes, stacking faults (SF), dislocations (TSD, TED, BPD), triangular defects, step clusters, carrot defects, etc. Due to the presence of these defects, the light irradiated onto the surface of ingot 100 will be scattered, resulting in differences in brightness at various locations captured by the light-collecting device 2. For example, the image area corresponding to a defect-free location will be darker, while the image area corresponding to a defective location will be brighter, thus allowing the location of the defect to be determined. Specifically, the type of light source 1 can be flexibly selected according to requirements; it can be white light, a broadband light source, or a laser of a specific wavelength (such as 405nm, 355nm, etc.). For example, it can be an LED light source or a laser light source. The light-collecting device 2 can also have various structures, as long as it can collect reflected light and thus detect defects. For example, in this embodiment, the light-collecting device 2 is a CCD camera.

[0030] In a preferred embodiment, in order to further optimize the capture effect of the lens 21 of the light acquisition device 2 on the scattered light, the lens 21 of the light acquisition device 2 is configured to be within a distance range of 100mm to 200mm from the crystal ingot 100, and its field of view width (the size of the area that can be covered perpendicular to the optical axis) on the surface of the crystal ingot 100 is 20 to 50mm.

[0031] As an optional embodiment, the light source 1 is configured to emit light beams from multiple directions toward the target detection location. Since defects at the target detection location may scatter light differently in different directions, illuminating the target detection location with multiple light beams from multiple directions avoids missed detections due to weaker scattering of light from certain directions by some defects, thus improving the accuracy of defect detection. Preferably, the polarization directions of the light beams emitted from multiple directions are the same, which eliminates the influence of different polarization directions on defect detection and improves the accuracy of defect detection.

[0032] Specifically, in order to enable light source 1 to emit beams from multiple different directions toward the target detection position, different implementation schemes are possible: like Figure 2 As shown, in one optional embodiment, the light source 1 includes multiple light-emitting components 11, which are positioned at different locations, and the light emitted by each light-emitting component 11 is directed towards the target detection position. That is, in this embodiment, by arranging multiple light-emitting components 11 at different positions in space, each light-emitting component 11 emits a beam of light in a specific direction, thereby achieving the effect of illuminating the target detection position from multiple directions. In a specific embodiment, the light-emitting component 11 is an LED surface light source, thereby better generating a beam of light that meets the detection requirements.

[0033] like Figure 3 As shown, in another optional embodiment, the light source 1 includes: a light-emitting component 11; a beam-splitting component 12 configured to split the light from the light-emitting component 11 into two beams; and a reflector 13 reflecting at least one beam of light split by the beam-splitting component 12, so that the two beams of light split by the beam-splitting component 12 illuminate the target detection position from different directions. In this embodiment, a single light-emitting component 11 is used. The light emitted by the light-emitting component 11 is split into two beams by using the beam-splitting component 12, and then the split beams are reflected by the reflector 13, thereby changing their direction, so that the two split beams illuminate the target detection position of the ingot 100 from different directions. Specifically, the beam-splitting component 12 can be selected in various ways depending on the actual situation, such as a polarizing beam-splitting element, a Granlin lens, a Granlin prism, a Wollaston prism, etc.

[0034] In some optional embodiments, the structure of the light source 1 satisfies the following: the light-emitting component 11 is a laser; the light source 1 includes a lens assembly 14 and a shaping component 15, arranged sequentially along the light path direction emitted by the light-emitting component 11, wherein the lens assembly 14 is configured to expand the light emitted by the light-emitting component 11, and the shaping component 15 is configured to shape the expanded beam to increase the uniformity of brightness at various points in the beam; the light source 1 includes an optical path transmission component 16, which is disposed between the reflector 13 and the ingot 100, at least one of the two beams split by the beam splitter 12 passes through the optical path transmission component 16 to adjust the transmission direction of the beam, and the reflector 13 adjusts the beam direction at a large angle, while the optical path transmission component 16 adjusts the beam angle within a small range, thereby effectively controlling the illumination angle of the beam and enabling the beam to more accurately illuminate the target detection position.

[0035] By using a laser as the light-emitting component 11, its high directionality, high monochromaticity, high brightness, and high coherence can improve the resolution and accuracy of surface defect detection in the ingot 100. In other optional embodiments, the light-emitting component 11 can be white light, a broadband light source, or a laser of a specific wavelength (such as 405nm, 355nm, etc.). The shorter the wavelength of the light emitted by the light-emitting component 11, the more obvious the scattering effect, and therefore the higher the detection resolution of surface defects in the ingot 100.

[0036] like Figure 1 and Figure 3 As shown, in some preferred embodiments, there are multiple light-collecting devices 2, which are configured to receive scattered light from the target detection position of the ingot 100 from multiple directions. By setting multiple light-collecting devices 2, scattered light can be collected from multiple directions (i.e., multiple directions and / or positions), similar to observing defects from multiple angles. This avoids the situation where scattered light from some defects is absent in certain directions, thus preventing missed detection and further improving the comprehensiveness of defect detection.

[0037] like Figures 1 to 3As shown, the ingot surface defect detection device of this embodiment further includes: a first polarization component 3, configured to polarize and modulate the light beam emitted by the light source 1 so that the light beam directed toward the target detection position has a preset polarization direction; and a second polarization component 4, configured to polarize and filter the light collected by the light acquisition device 2 to filter out reflected light from the ingot 100 and retain scattered light from the ingot 100. The first polarization component 3 is a polarizing component, and the second polarization component 4 is a polarization filtering component (e.g., a polarizer). The crystal ingot surface defect detection device of this embodiment introduces polarization control. By setting a first polarization component 3 and a second polarization component 4, the first polarization component 3 is used to modulate the polarization of the light beam, so that it has a preset polarization direction. When it irradiates the surface of the crystal ingot 100, it is reflected and scattered at the defect location. The scattering process changes the polarization direction of the light beam. The second polarization component 4 performs polarization filtering on the light collected by the light acquisition device 2, which can filter out the reflected light with the preset polarization direction and retain the scattered light. In this way, the interference of the reflected light on the defect detection can be avoided, and the scattered light at the defect location can be more easily identified.

[0038] like Figure 3 As shown, in this embodiment, the first polarization component 3 and the beam splitter component 12 of the crystal ingot surface defect detection device are integrated into a single structure. This integrated structure is a polarization beam splitter element, which combines the aforementioned beam splitting and polarization modulation functions. The polarization beam splitter element splits the light from the light-emitting component 11 into two beams with different polarization directions. The light source 1 also includes a phase retarder 17. One beam of light split by the polarization beam splitter element passes through the phase retarder 17 to adjust the polarization direction of the beam, making it the same as the polarization direction of the other beam split by the polarization beam splitter element. In this way, by integrating the first polarization component 3 and the beam splitter component 12 into one unit, the structure of the device is simplified. Moreover, by configuring the phase retarder 17 (e.g., a half-wave plate), the polarization directions of the two beams split by the polarization beam splitter element can be made the same, which can avoid the influence of different beam polarization directions on defect detection and ensure the accuracy of defect detection. Here, the polarization beam splitter element is PBS, which is called Polarizing Beam Splitter in English.

[0039] In some optional embodiments, the ingot surface defect detection device satisfies at least one of the following: The crystal ingot surface defect detection equipment includes a motion platform 5, which supports the crystal ingot 100. The motion platform 5 is movably configured to change the target detection position of the crystal ingot 100. Thus, by operating the motion platform 5, the detection position can be changed, facilitating defect detection at different locations on the surface of the crystal ingot 100. Specifically, to improve the flexibility of detection position switching, the motion platform 5 is movably configured in at least one of the following ways: the motion platform 5 is movable; the motion platform 5 is tiltable; or the motion platform 5 is rotatable about a preset axis, wherein the angle between the preset axis and the horizontal plane is an acute angle.

[0040] In this embodiment, the depth of field of lens 21 is not less than 1 mm. This allows for better observation of defects at different depths, improving the accuracy of defect detection. Preferably, lens 21 is a telecentric objective lens. By collecting signals through a telecentric objective lens, system distortion is reduced, enabling the detection equipment to achieve greater depth of field and better resolution while maintaining rapid detection over a wide field of view.

[0041] The ingot surface defect detection equipment includes a display device 6, which is communicatively connected to a light acquisition device 2. The display device 6 is configured to display an image corresponding to the scattered light acquired by the light acquisition device 2. The ingot surface defect detection equipment also includes a processor 7, which is communicatively connected to the light acquisition device 2. The processor 7 is configured to determine the defect area and / or defect type on the surface of the ingot 100 based on the scattered light acquired by the light acquisition device 2.

[0042] In addition, such as Figure 4 As shown in the embodiments of this application, a method for detecting and processing surface defects in a crystal ingot is also provided. This method includes: Step S102: Control the light source 1 to emit a beam of light towards the target detection position on the surface of the crystal ingot 100; Step S104: Use the light acquisition device 2 to receive the scattered light from the target detection position of the crystal ingot 100, wherein the distance between the lens 21 of the light acquisition device 2 and the crystal ingot 100 is not less than 100mm, and the field of view of the lens 21 on the surface of the crystal ingot 100 is not less than 10mm.

[0043] The crystal ingot surface defect detection method of this embodiment controls the light source 1 to emit a light beam towards the target detection position on the surface of the crystal ingot 100, and collects the scattered light from the surface of the crystal ingot 100 through the light acquisition device 2. The lens 21 of the light acquisition device 2 is configured such that the distance between it and the crystal ingot 100 is not less than 100 mm and its field of view on the surface of the crystal ingot 100 is not less than 10 mm. Since the device uses scattered light for defect detection, even if the defects at local positions on the crystal ingot surface have large undulations or tilt angles, their scattered light will scatter in all directions. With the lens 21 of the above-mentioned observation distance and field of view angle, the scattered light from various defect positions on the crystal ingot 100 can be effectively collected. Thus, the detection of crystal ingot surface defects can be achieved based on the scattered light, avoiding the omission of defects at positions with large undulations or tilt angles, and solving the technical problem of easy omission when detecting crystal ingot surface defects in related technologies.

[0044] In some optional embodiments, the ingot surface defect detection method satisfies the following: controlling the light source 1 to emit a light beam towards the target detection position of the ingot 100 includes controlling the light source 1 to emit light beams towards the target detection position from multiple directions. Since defects at the target detection position may scatter light differently in different directions, using multiple light beams to irradiate the target detection position from multiple directions can avoid missed detections due to weak scattering of light beams from a particular direction by some defects, thus improving the accuracy of defect detection. Preferably, the polarization directions of the light beams emitted from multiple directions are the same, which can eliminate the influence of factors with different polarization directions on defect detection and improve the accuracy of defect detection.

[0045] Receiving scattered light from the target detection position of the ingot 100 using a light-collecting device 2 includes: using multiple light-collecting devices 2 to receive scattered light from the target detection position of the ingot 100 from multiple directions. By using multiple light-collecting devices 2 to collect scattered light from multiple directions (i.e., multiple directions and / or positions), similar to observing defects from multiple angles, it is possible to avoid the situation where scattered light from some defects is absent in certain directions, thus leading to missed detection, and can further improve the comprehensiveness of defect detection. Preferably, controlling the light source 1 to emit a beam of light towards the target detection position of the ingot 100 includes: timing control of the beams in multiple directions so that the multiple beams illuminate the target detection position sequentially (not simultaneously).

[0046] Controlling the light source 1 to emit a light beam toward the target detection position of the ingot 100 includes: using a first polarizing component 3 to polarize the light beam emitted by the light source 1 so that the light beam directed toward the target detection position has a preset polarization direction; using a light acquisition device 2 to receive the scattered light from the target detection position of the ingot 100 includes: using a second polarizing component 4 to polarize and filter the light acquired by the light acquisition device 2 to filter out reflected light from the ingot 100 and retain scattered light from the ingot 100. By using the first polarizing component 3 to polarize and modulate the light beam so that it has a preset polarization direction, when it irradiates the surface of the ingot 100, it is reflected and scattered at the defect position. The scattering process changes the polarization direction of the light beam. By using the second polarizing component 4 to polarize and filter the light acquired by the light acquisition device 2, reflected light with the preset polarization direction can be filtered out, and scattered light can be retained. In this way, interference from reflected light on defect detection can be avoided, the contrast of scattered light can be improved, and the scattered light at the defect position can be more easily identified.

[0047] The method for detecting and processing defects on the surface of a crystal ingot further includes controlling the movement of a motion platform 5 that carries the crystal ingot 100 to change the target detection position of the crystal ingot 100. In this way, by operating the motion platform 5, the detection position can be changed, facilitating defect detection at different locations on the surface of the crystal ingot 100. Specifically, to improve the flexibility of switching detection positions, the motion platform 5 satisfies at least one of the following: the motion platform 5 is movably set, the motion platform 5 is tilted, or the motion platform 5 is rotatably set about a preset axis, wherein the angle between the preset axis and the horizontal plane is an acute angle.

[0048] The method for detecting and processing defects on the surface of a crystal ingot also includes: controlling the display device 6 to display the image corresponding to the scattered light collected by the light acquisition device 2; the method for detecting and processing defects on the surface of a crystal ingot also includes: using preset judgment logic or machine learning technology to determine the defect area and / or defect type on the surface of the crystal ingot 100 based on the scattered light collected by the light acquisition device 2.

[0049] Based on the above embodiments, it can be seen that the ingot surface defect detection device of this application has at least the following technical effects: The crystal ingot surface defect detection device of this application embodiment includes: a light source 1, configured to emit a light beam toward a target detection position on the surface of the crystal ingot 100; and a light acquisition device 2, configured to receive scattered light from the target detection position on the crystal ingot 100. The distance between the lens 21 of the light acquisition device 2 and the crystal ingot 100 is not less than 100 mm, and the field of view of the lens 21 on the surface of the crystal ingot 100 is not less than 10 mm. This crystal ingot surface defect detection device, with this structural design, emits a light beam toward the target detection position on the surface of the crystal ingot 100 through the light source 1 and acquires the scattered light from the surface of the crystal ingot 100 through the light acquisition device 2. The lens 21 of the light acquisition device 2 is configured such that the distance between it and the crystal ingot 100 is not less than 100 mm, and its field of view on the surface of the crystal ingot 100 is not less than 10 mm. Since the equipment uses scattered light for defect detection, even if the defects on the surface of the crystal ingot have large undulations or tilt angles, the scattered light will scatter in all directions. With the lens 21 with the above-mentioned observation distance and field of view, the scattered light from various defect locations on the crystal ingot 100 can be effectively collected. Thus, the surface defects of the crystal ingot can be detected based on the scattered light, avoiding the omission of defects in locations with large undulations or tilt angles. This solves the technical problem of easy omission when detecting defects on the surface of crystal ingots in related technologies.

[0050] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0051] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0052] The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0053] The above are merely preferred embodiments of this application and are not intended to limit this application in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this application without departing from the scope of the technical solution of this application shall still fall within the scope of the technical solution of this application.

Claims

1. A crystal ingot surface defect detection device, characterized in that, include: A light source (1) is configured to emit a light beam toward a target detection position on the surface of an ingot (100); A light-collecting device (2) is configured to receive scattered light from the target detection position of the ingot (100), wherein the distance between the lens (21) of the light-collecting device (2) and the ingot (100) is not less than 100 mm, and the field of view of the lens (21) on the surface of the ingot (100) is not less than 10 mm.

2. The ingot surface defect detection equipment according to claim 1, characterized in that, The light source (1) is configured to emit light beams from multiple directions toward the target detection location.

3. The ingot surface defect detection equipment according to claim 2, characterized in that, The light source (1) includes: Light-emitting component (11); Beam splitter (12), which is configured to split the light from the light-emitting component (11) into two beams; A reflective component (13) reflects at least one beam of light split by the beam splitter (12) so that the two beams of light split by the beam splitter (12) illuminate the target detection position from different directions.

4. The ingot surface defect detection equipment according to claim 3, characterized in that, The structure of the light source (1) satisfies at least one of the following: The light-emitting component (11) is a laser; The light source (1) includes a lens assembly (14) and a shaping component (15). Along the light path direction of the light emitted by the light-emitting component (11), the lens assembly (14), the shaping component (15), and the beam splitting component (12) are arranged in sequence. The lens assembly (14) is configured to expand the light emitted by the light-emitting component (11), and the shaping component (15) is configured to shape the beam obtained after beam expansion to increase the uniformity of brightness of the beam. The light source (1) includes an optical path transmission component (16), which is disposed between the reflector (13) and the ingot (100). At least one of the two beams split by the beam splitter (12) passes through the optical path transmission component (16) to adjust the transmission direction of the beam.

5. The ingot surface defect detection equipment according to claim 1, characterized in that, There are multiple light-collecting devices (2), and the multiple light-collecting devices (2) are configured to receive scattered light from the target detection position of the ingot (100) from multiple directions.

6. The crystal ingot surface defect detection device according to any one of claims 1 to 5, characterized in that, The ingot surface defect detection equipment includes: The first polarization component (3) is configured to polarize the light beam emitted by the light source (1) so that the light beam directed toward the target detection position has a preset polarization direction. The second polarization component (4) is configured to perform polarization filtering on the light collected by the light collection device (2) to filter out reflected light from the ingot (100) and retain scattered light from the ingot (100).

7. The ingot surface defect detection equipment according to claim 6, characterized in that, When the ingot surface defect detection device is the ingot surface defect detection device according to claim 4, the first polarization component (3) and the beam splitting component (12) are integrated into a single structure, the single structure being a polarization beam splitting element, which splits the light from the light-emitting component (11) into two beams of light with different polarization directions; the light source (1) further includes: A phase retarder (17) is used to adjust the polarization direction of a beam of light split by the polarization beam splitter so that it is the same as the polarization direction of another beam of light split by the polarization beam splitter.

8. The crystal ingot surface defect detection device according to any one of claims 1 to 5, characterized in that, The ingot surface defect detection equipment meets at least one of the following requirements: The crystal ingot surface defect detection device includes a motion platform (5), which is used to support the crystal ingot (100). The motion platform (5) is movably configured to change the target detection position of the crystal ingot (100). The depth of field of the lens (21) is not less than 1mm; The crystal ingot surface defect detection equipment includes a display device (6), which is communicatively connected to the light acquisition device (2). The display device (6) is configured to display the image corresponding to the scattered light acquired by the light acquisition device (2). The crystal ingot surface defect detection device includes a processor (7) which is communicatively connected to the light acquisition device (2). The processor (7) is configured to determine the defect area and / or defect type on the surface of the crystal ingot (100) based on the scattered light acquired by the light acquisition device (2).

9. A method for detecting and processing defects on the surface of a crystal ingot, characterized in that, include: Control the light source (1) to emit a beam of light toward the target detection position on the surface of the ingot (100); A light-collecting device (2) is used to receive scattered light from the target detection position of the ingot (100), wherein the distance between the lens (21) of the light-collecting device (2) and the ingot (100) is not less than 100 mm, and the field of view of the lens (21) on the surface of the ingot (100) is not less than 10 mm.

10. The method for detecting and processing surface defects of a crystal ingot according to claim 9, characterized in that, The ingot surface defect detection and treatment method satisfies at least one of the following: The control of the light source (1) to emit a light beam toward the target detection position of the ingot (100) includes: controlling the light source (1) to emit light beams toward the target detection position from multiple directions; The method of using a light-collecting device (2) to receive scattered light from the target detection position of the ingot (100) includes: using multiple light-collecting devices (2) to receive scattered light from the target detection position of the ingot (100) from multiple directions; The control light source (1) emits a light beam toward the target detection position of the ingot (100), including: using a first polarization component (3) to polarize the light beam emitted by the light source (1) so that the light beam directed toward the target detection position has a preset polarization direction; the use of a light acquisition device (2) to receive the scattered light from the target detection position of the ingot (100) includes: using a second polarization component (4) to polarize the light acquired by the light acquisition device (2) to filter out the reflected light from the ingot (100) and retain the scattered light from the ingot (100); The method for detecting and processing defects on the surface of a crystal ingot further includes: controlling the movement of a motion platform (5) that carries the crystal ingot (100) to change the target detection position of the crystal ingot (100); The method for detecting and processing defects on the surface of crystal ingots further includes: controlling the display device (6) to display the image corresponding to the scattered light collected by the light acquisition device (2); The method for detecting and processing defects on the surface of the crystal ingot further includes: determining the defect area and / or defect type on the surface of the crystal ingot (100) using a preset judgment logic or machine learning technology based on the scattered light collected by the light acquisition device (2).