A global scanning method with misalignment and a micro-display system

Abstract

This invention relates to a global scanning method with misalignment and a micro-display system. The global scanning method with misalignment includes: dividing multiple rows of micro-light-emitting diodes (LEDs) on a micro-display panel into multiple display groups, each display group including one or more rows of micro-LEDs; determining the scanning misalignment time between adjacent display groups; and sequentially scanning the multiple display groups of the micro-display panel according to the misalignment time. Using the global scanning method with misalignment of this invention, the number of micro-LEDs lit at the same time is reduced, the current distribution is more uniform in time and space, avoiding the problem of concentrated peak current areas, and the voltage drop generated during the scanning process is reduced, which can improve the service life of the micro-display panel and improve the stability of the display system.

Description

Technical Field

[0001] This invention relates to the field of micro light-emitting diode technology, and in particular to a global scanning method with misalignment and a micro-display system. Background Technology

[0002] Micro-LED (Micro Light Emitting Diode) is an emerging display technology that miniaturizes traditional light-emitting diodes to the micrometer level. As tiny, light-emitting semiconductor devices, micro-LEDs have advantages such as low power consumption, long lifespan, high brightness, and high contrast.

[0003] Currently, due to limitations in manufacturing processes, miniature light-emitting diodes (LEDs) cannot be mass-produced into color panels. Existing microdisplay panels composed of arrays of miniature LEDs are typically monochrome, meaning they can only emit light of one color. To display color images, it is necessary to assemble three microdisplay panels that can emit light of different colors together, forming a microdisplay system consisting of a red microdisplay panel, a green microdisplay panel, and a blue microdisplay panel.

[0004] When displaying color images, pulse width modulation (PWM) technology is used to control the illumination of relevant micro-LEDs. The current illumination method is full-screen illumination, scanning all rows simultaneously. That is, each row of micro-LEDs in the array lights up simultaneously, and then turns off simultaneously at the end of the scan. This illumination method leads to a significant voltage drop, thereby reducing the lifespan of the micro-display panel. Summary of the Invention

[0005] To address at least some of the problems mentioned above in the prior art, the present invention aims to provide a global scanning method with misalignment, comprising:

[0006] The micro-display panel is divided into multiple display groups, each display group consisting of one or more rows of micro-light-emitting diodes;

[0007] Determine the scan misalignment duration between display groups with adjacent scan times; and

[0008] The multiple display groups of the micro-display panel are scanned sequentially according to the misalignment duration.

[0009] Furthermore, one or more rows of miniature light-emitting diodes that are scanned using the same set of scanning signals are grouped into a display group.

[0010] Furthermore, each display group includes multiple rows of micro light-emitting diodes, which may or may not be adjacent in position.

[0011] Furthermore, the scanning misalignment time between adjacent display groups is determined based on the scanning cycle of a frame of image data, the number of display groups, and the duty cycle.

[0012] Furthermore, the scanning period T of one frame of image data satisfies the following relationship with the number of display groups M, the scanning misalignment time t, and the duty cycle D:

[0013] T≥(D*T)+t*(M-1),

[0014] Where M is a positive integer, t, T and D are positive numbers, and the scan misalignment time t and duty cycle D are fixed values.

[0015] Furthermore, the larger the duty cycle, the more display groups there are, and the smaller the maximum value of the scan misalignment time.

[0016] Furthermore, the duty cycle D is less than 1.

[0017] Furthermore, the scan time is the same for each display group.

[0018] Furthermore, the interval between the scan start time points of two adjacent display groups is equal to the scan misalignment duration.

[0019] Furthermore, the process of sequentially scanning multiple display groups of the micro-display panel according to the misalignment duration includes:

[0020] First, the first display group is scanned. After the first scan misalignment time, the second display group is scanned, and so on. After the (M-1)th scan misalignment time, the Mth display group is scanned.

[0021] Furthermore, a set of scan signals contains multiple bits of data.

[0022] Furthermore, during scanning, a set of scan signals is transmitted by multiple signal lines.

[0023] Furthermore, each signal line transmits one bit of data.

[0024] Furthermore, when a display group contains multiple rows of miniature light-emitting diodes, a set of scan signals contains multiple sub-signal groups, each containing multiple bits of data.

[0025] Furthermore, if a display group contains a row of miniature light-emitting diodes, during scanning, there is an interval between the start time points of the transmission of two adjacent bits of data.

[0026] Furthermore, if a display group contains multiple rows of miniature light-emitting diodes, during scanning, there is an interval between the start time points of the transmission of two adjacent bits of data in each sub-signal group.

[0027] Furthermore, the interval between the start times of transmission of two adjacent bits of data is equal to the pulse length of the previous bit's data transmission.

[0028] Furthermore, the pulse length of each bit of data increases sequentially.

[0029] Furthermore, the micro-display panel includes multiple micro-display panels, and each micro-display panel includes multiple display groups.

[0030] The present invention also provides a micro-display system, comprising:

[0031] One or more micro-display panels; and

[0032] The controller is configured to perform a global scan method with misalignment.

[0033] Furthermore, the microdisplay panel includes:

[0034] Miniature light-emitting diode chips, configured to emit light; and

[0035] A circuit board that is electrically connected to the micro LED chip.

[0036] Furthermore, the miniature light-emitting diode chip includes:

[0037] Drive backplane; and

[0038] Multiple miniature light-emitting diodes are arranged in an array on the drive backplane.

[0039] Furthermore, the miniature light-emitting diode includes:

[0040] Epitaxial layer;

[0041] A top conductive layer, the top conductive layer being located on the side and top surfaces of the light-emitting platform; and

[0042] A passivation barrier layer, the passivation barrier layer at least partially covering the side surface of the epitaxial layer, and the passivation barrier layer being located between the epitaxial layer and the top conductive layer.

[0043] Furthermore, the drive backplane includes:

[0044] substrate;

[0045] A driving circuit, located in the substrate, is configured to control the lighting and extinguishing of the micro LEDs;

[0046] The driving electrode is electrically connected to the driving circuit and the micro LED chip.

[0047] Furthermore, the micro LEDs are located on the driving electrodes, with each micro LED corresponding to one driving electrode.

[0048] Furthermore, the micro LED chip further includes a current spreading structure located between the micro LEDs, wherein the current spreading structure is arranged to surround the micro LEDs and is configured to electrically contact the micro LEDs and at least partially reflect the light emitted by the micro LEDs.

[0049] Furthermore, the micro LED chip also includes microlenses disposed on the micro LED, with adjacent microlenses connected together.

[0050] The present invention has at least the following beneficial effects:

[0051] (1) The method of global scanning with misalignment of the present invention is used to scan the micro LEDs of the micro display panel, which can reduce the number of micro LEDs lit at the same time, and make the current distribution more uniform in time and space, thus avoiding the problem of peak current concentration. At the same time, the voltage drop generated during the scanning process is reduced, which can improve the service life of the micro display panel and improve the stability of the display system.

[0052] (2) By using a global scanning method with misalignment to scan multiple micro-display panels, it is more conducive to the mixing of different colors and reduces color separation. Attached Figure Description

[0053] To further illustrate the above and other advantages and features of the various embodiments of the present invention, a more specific description of the embodiments of the invention will be presented with reference to the accompanying drawings. It is to be understood that these drawings depict only typical embodiments of the invention and are therefore not intended to limit its scope. In the drawings, identical or corresponding parts will be indicated by identical or similar reference numerals for clarity.

[0054] Figure 1 A schematic diagram of existing microdisplay panel row scan illumination is shown.

[0055] Figure 2 A schematic diagram of an existing microdisplay panel with full-screen illumination is shown.

[0056] Figure 3 A flowchart of a global scanning method with misalignment according to an embodiment of the present invention is shown.

[0057] Figure 4 A schematic diagram of a global scan with misalignment according to an embodiment of the present invention is shown.

[0058] Figure 5A schematic diagram of a global scan with misalignment at different duty cycles according to an embodiment of the present invention is shown.

[0059] Figure 6 A timing diagram with misaligned global scan is shown according to an embodiment of the present invention. Detailed Implementation

[0060] It should be noted that the components in the accompanying drawings may be shown exaggerated for illustrative purposes and may not be to scale.

[0061] In this invention, the various embodiments are merely intended to illustrate the solutions of the invention and should not be construed as limiting.

[0062] In this invention, unless otherwise specified, the quantifiers “a” and “one” do not exclude scenarios involving multiple elements.

[0063] It should also be noted that, in the embodiments of the present invention, only a portion of the parts or components may be shown for clarity and simplicity. However, those skilled in the art will understand that, under the teachings of the present invention, the required parts or components can be added as needed for specific scenarios.

[0064] It should also be noted that within the scope of this invention, the terms "same", "equal", and "equal to" do not mean that the two values ​​are absolutely equal, but allow for a certain reasonable error. In other words, the terms also cover "substantially the same", "substantially equal", and "substantially equal to".

[0065] It should also be noted that in the description of this invention, the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not explicitly or implicitly suggest that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0066] Furthermore, the embodiments of the present invention describe the process steps in a specific order. However, this is only for the convenience of distinguishing each step, and is not a limitation on the order of each step. In different embodiments of the present invention, the order of each step can be adjusted according to the process.

[0067] In this application, the term "configuration" refers to setting the shape, structure, material and / or function of a target object to achieve a desired technical effect. "Configuration" includes a variety of alternative technical means to achieve the technical effect, which become apparent from the teachings of this application.

[0068] In this application, the term "pixel row scanning" refers to lighting up or controlling the brightness of one or more pixels in a corresponding pixel row in the image according to the image display signal. In other words, pixel row scanning outputs a corresponding display signal to the pixel row, rather than necessarily lighting up all the pixels in the pixel row.

[0069] Figure 1 A schematic diagram of existing microdisplay panel row scan illumination is shown. Figure 2 A schematic diagram of an existing microdisplay panel with full-screen illumination is shown.

[0070] like Figure 1 As shown, the microdisplay panel includes multiple rows of micro-light-emitting diodes (LEDs) arranged in an array, with each row containing multiple LEDs arranged in an orderly manner. When displaying an image, the LEDs of the microdisplay panel are illuminated using a row scanning method. In the figure, "row" represents the total number of rows in the microdisplay panel. The scan signals SFx[0]-SFx[row-1] are mainly used to control the row scanning of the microdisplay panel to selectively illuminate the LEDs to display the image. The scan signal SFx[0] controls the first row scan, SFx[1] controls the second row scan, and so on, with SFx[row-1] controlling the row-th scan.

[0071] like Figure 2 As shown, currently, the display of micro-display panels requires PWM control to light up the relevant pixels, and the micro-LEDs of the micro-display panel are lit up in a full-screen lighting manner during display. The scanning signals SFx[0]-SFx[row-1] simultaneously control all rows of the micro-display panel to scan, and the micro-LEDs in each row of the micro-LED array are lit up at the same time, and they will turn off at the same time when the scan ends. During the scanning process, a large number of micro-LEDs are lit up at the same time, which will cause current concentration. When they are turned off, the current decreases sharply and the voltage drops suddenly, resulting in a large voltage drop, which will reduce the service life of the micro-display panel. In addition, the full-screen lighting method is prone to color separation when displaying color images. When displaying color images, the three micro-display panels are scanned at the same time, but the pixels (micro-LEDs) of each micro-display panel are different, the gray values ​​are different, and the internal system frequencies may also be different. The differences in the light-emitting characteristics of the three-color micro-LEDs (red, green, and blue), such as different response times and light-emitting efficiencies, may cause them to fail to reach the optimal color mixing state at the same time, resulting in uneven color mixing and thus color separation.

[0072] Figure 3 A flowchart of a global scanning method with misalignment according to an embodiment of the present invention is shown. Figure 4 A schematic diagram of a global scan with misalignment according to an embodiment of the present invention is shown.

[0073] like Figure 3 As shown, a global scanning method with misalignment includes:

[0074] Step 1: Divide the multi-row micro-light-emitting diodes of the micro-display panel into multiple display groups, each display group including one or more rows of micro-light-emitting diodes.

[0075] Step 2: Determine the scan misalignment duration between adjacent display groups.

[0076] Step 3, as follows Figure 4 As shown, multiple display groups of the micro-display panel are scanned sequentially according to the misalignment duration. The interval between the scanning start time points of two adjacent display groups is equal to the scanning misalignment duration. The first display group is scanned first, and the second display group is scanned after the first scanning misalignment duration, and so on. The Mth display group is scanned after the (M-1)th scanning misalignment duration, and the scanning of all display groups is completed in one frame of image data scanning cycle.

[0077] The number of micro-display panels is multiple, preferably three, and each micro-display panel includes multiple display groups. Multiple micro-display panels are scanned simultaneously using a global scanning method with misalignment.

[0078] The following section details the global scan method with misalignment.

[0079] In some embodiments, one or more rows of micro-light-emitting diodes (LEDs) scanned using the same set of scan signals are grouped into a display group. In some embodiments, each display group includes multiple rows of micro-light-emitting diodes, such as 2 rows, 3 rows, or 4 rows, etc., wherein the multiple rows of micro-light-emitting diodes may be adjacent or non-adjacent in position.

[0080] In some embodiments, during the scanning process, a set of scanning signals is used to scan a display group, while simultaneously scanning one or more rows of micro light-emitting diodes within a display group.

[0081] In some embodiments, the scan duration is the same for each display group.

[0082] In some embodiments, the scanning misalignment duration is determined based on the scanning period of a frame of image data, the number of display groups, and the duty cycle. The scanning period T of a frame of image data satisfies the following relationship with the number of display groups M, the scanning misalignment duration t, and the duty cycle D:

[0083] T≥(D*T)+t*(M-1),

[0084] Where M is a positive integer, t, T and D are positive numbers, and the scan misalignment time t and duty cycle D are fixed values.

[0085] Duty cycle and brightness are related. A higher duty cycle means a longer scan time for each display group, resulting in longer illumination time for the micro LEDs and higher brightness. The scan cycle for one frame of image data is fixed, and all display groups on the micro-display panel need to be scanned within that cycle. A higher duty cycle allows for more display groups and a smaller maximum scan misalignment time. Conversely, a lower duty cycle results in a larger maximum scan misalignment time and a wider range of selectable scan misalignment times.

[0086] Figure 5 A schematic diagram of a global scan with misalignment at different duty cycles according to an embodiment of the present invention is shown.

[0087] exist Figure 5 In the first row, the duty cycle D = 1 / 2, the scan misalignment time is set to the maximum value, and the total scan time of all display groups is equal to the scan cycle of one frame of image data.

[0088] exist Figure 5 The second row has a duty cycle of D = 1 / 4, and the scan misalignment time is the same as that of the first row. The total scan time of all display groups is less than the scan cycle of one frame of image data.

[0089] exist Figure 5 In the third line, the duty cycle D = 1, and the scanning time of each display group is equal to the scanning cycle of one frame of image data. At this time, all display groups start scanning at the same time, and there is no scanning misalignment time between display groups. This is a full-screen lighting scanning mode.

[0090] In some embodiments, such as Figure 5 As shown, the microdisplay panel loads display data before scanning a frame of image data. The display cycle of a frame includes at least the time for loading display data and the scanning cycle of a frame of image data. Typically, the display cycle of a frame is fixed. When the total scanning time of all display groups is small, there is idle time between the end of the scan and the loading of display data. The display cycle of a frame also includes idle time.

[0091] In some embodiments, a set of scan signals can describe the brightness, lighting sequence, and other characteristics of the miniature light-emitting diodes (pixels) in a display group. A set of scan signals contains 10 bits of data, transmitted via 10 signal lines (sf0-sfx), with each signal line transmitting 1 bit of data. These 10 bits of data can describe the brightness, lighting sequence, and other characteristics of the pixels in a display group. The 10 signal lines are treated as a group and data is transmitted sequentially according to a specific timing sequence to achieve line scanning.

[0092] During scanning, there is an interval between the start times of transmission of two adjacent bits of data in a set of scan signals corresponding to a display group. This interval is equal to the pulse length of the previous bit's data transmission.

[0093] In some embodiments, a display group includes a row of miniature light-emitting diodes (LEDs), and a set of scanning signals can describe the brightness, lighting sequence, and other characteristics of the row of LEDs. The scanning signal corresponding to a row of LEDs is transmitted by a set of SFx (sf0-sf9) signal lines, and there are N*10 signal lines for N rows.

[0094] During line scanning, one bit of data is transmitted in the form of pulse signals on each SF signal line in a specific order. The pulse signal transmitted on each SF signal line has a corresponding pulse length, and the pulse length of the pulse signal transmitted on each SF signal line = pulse unit length * brightness level.

[0095] Brightness levels refer to the number of different levels at which the brightness of a light-emitting device (such as a micro-display panel) can be adjusted. For example, a brightness level of 8 means that the brightness of the device can be adjusted at 8 different levels. The more levels there are, the more precise the brightness adjustment can be.

[0096] In many applications that control brightness using pulse width modulation (PWM), the brightness level is typically achieved by changing the duty cycle. Generally, a higher duty cycle corresponds to a higher brightness level, resulting in a brighter light output. For example, when the duty cycle increases from 10% to 50%, all other things being equal, the brightness will increase accordingly, meaning the brightness level will shift towards a brighter setting. This is because a larger duty cycle means a greater proportion of the time the device is powered on and emitting light per unit time, resulting in a higher luminous flux received by the human eye, which perceives a brighter image.

[0097] Table 1 shows the pulse unit length of the sf0-sf9 signal lines.

[0098]

[0099]

[0100] As shown in the table, the pulse unit length increases sequentially from sf0 to sf9. With the brightness level remaining constant, a larger pulse unit length results in a larger pulse length on the sf signal line. Therefore, the pulse length gradually increases from sf0 to sf9, with sf0 having the smallest and largest pulse length. This gradual increase in pulse length can serve as a basis for identification. The receiving end can follow this characteristic of progressively longer pulse lengths to receive each bit of data more systematically and accurately, reducing the complexity of data processing and the possibility of errors.

[0101] Figure 6 A timing diagram with misaligned global scan is shown according to an embodiment of the present invention.

[0102] Figure 6 The first four rows illustrate the transmission of pulse signals on the four signal lines of the first display group. The first display group contains a row of miniature light-emitting diodes. At the start of the scan cycle, the scan signal corresponding to the first display group controls the sf0 signal line to go high, transmitting a pulse signal, while the remaining signal lines go low. The scan start time of the first display group is the time when the sf0 signal line goes high. After the first pulse length, the sf0 signal line goes low, and simultaneously the sf1 signal line goes high, transmitting a pulse signal, while the remaining signal lines go low. After the second pulse length, the sf1 signal line goes low, and simultaneously the sf2 signal line goes high, transmitting a pulse signal, while the remaining signal lines go low. After the third pulse length, the sf2 signal line goes low, and simultaneously the sf3 signal line goes high, transmitting a pulse signal, while the remaining signal lines go low. This continues until the sf9 signal line goes low, at which point the first display group has completed its scan.

[0103] Figure 6 Lines 5 to 8 show the signal pulse lengths on the four signal lines of the second display group. The second display group contains a row of miniature light-emitting diodes. The scan signal corresponding to the second display group controls the sf0 signal line to go high, transmitting a pulse signal, while the other signal lines go low. After the first signal pulse length, the sf0 signal line goes low, and simultaneously the sf1 signal line goes high, transmitting a pulse signal, while the other signal lines go low. After the second signal pulse length, the sf1 signal line goes low, and simultaneously the sf2 signal line goes high, transmitting a pulse signal, while the other signal lines go low. After the third signal pulse length, the sf2 signal line goes low, and simultaneously the sf3 signal line goes high, transmitting a pulse signal, while the other signal lines go low. When the sf3 signal line goes low, it indicates that the first display group has completed scanning. The scan start time of the first display group is the time when the sf0 signal line goes high.

[0104] The scanning start time of the second display group is the time when the SF0 signal line goes high. The scanning misalignment time between the second and first display groups is the interval between the time when the SF0 signal line of the second display group goes high and the time when the SF0 signal line of the first display group goes high.

[0105] This process continues until one frame of the image is displayed. In general, the scanning signals alternately appear at high levels to scan all display groups one by one, completing the scan of all display groups within a full scan cycle. This continuous cycle, combined with the persistence of vision effect in the human eye, ensures that the observer sees a complete and stable image display.

[0106] When a display group contains two rows of miniature LEDs, the two rows of LEDs are controlled by a single scan signal. This scan signal contains two sub-signal groups, totaling 20 bits of data. Each row of LEDs corresponds to one sub-signal group, containing 10 bits of data. During scanning, both rows of LEDs are scanned simultaneously, and the two sub-signal groups corresponding to the two rows of LEDs are transmitted concurrently. The transmission method of the 10 bits of data in each sub-signal group is the same as when a display group contains only one row of LEDs.

[0107] When a display group contains three rows of miniature LEDs, the three rows of LEDs are controlled by a set of scan signals. This set of scan signals contains three sub-signal groups, totaling 30 bits of data. Each row of LEDs corresponds to one sub-signal group, containing 10 bits of data, and so on.

[0108] When scanning the micro-light-emitting diodes of a micro-display panel using the staggered global scanning method of the present invention, multiple rows of micro-light-emitting diodes are divided into multiple display groups, and the scanning is performed in staggered order on a display group basis. The scanning start time of each display group is different, and the number of micro-light-emitting diodes lit at the same time is reduced. The current distribution is more uniform in time and space, avoiding the problem of concentrated peak current areas. The voltage drop generated during the scanning process is reduced, which can improve the service life of the micro-display panel and improve the stability of the display system.

[0109] Different micro LEDs (red, green, and blue) have different light-emitting characteristics, such as response time and luminous efficiency. When using a full-screen scanning method, the lighting time of micro LEDs of different colors varies, which may lead to uneven color mixing. Multiple micro display panels use a global scanning method with misalignment, which is more conducive to the mixing of different colors and reduces color separation.

[0110] During scanning, there is an interval between the start times of two adjacent bits of data corresponding to each row of micro LEDs. The next data is transmitted only after the previous data is completed. This results in a smaller current flow at any given time and a smaller voltage drop during scanning, which can improve the lifespan of the microdisplay panel. When multiple microdisplay panels use this transmission method for scanning signals, it is more conducive to the mixing of different colors and reduces color separation.

[0111] The present invention also provides a micro-display system, comprising: one or more micro-display panels; and a controller configured to perform the above-described global scanning method with misalignment.

[0112] In one embodiment, the controller can be a register, a central processing unit (CPU), or the like.

[0113] In some embodiments, the microdisplay panel includes a micro light-emitting diode chip configured to emit light; and a circuit board electrically connected to the micro light-emitting diode chip.

[0114] In some embodiments, the circuit board may include a flexible circuit board and / or a rigid circuit board. The circuit board has an external interface configured to connect to an external power supply and / or control commands to power and / or control the micro LED chip.

[0115] In some embodiments, the micro LED chip includes a driving backplane; and a plurality of micro LEDs arranged in an array on the driving backplane.

[0116] In some embodiments, the size of each micro-LED chip does not exceed 1 cm, preferably not exceeding 20 micrometers. The micro-LED structures are formed in an array within the micro-LED chips, with resolutions such as 720*480, 640*480, 1920*1080, 1280*720, 2K, or 4K. The diameter of the micro-LED structures is in the nanometer range, for example, from 20 nm to 100 nm.

[0117] In some embodiments, the micro-LED array may comprise a single-layer micro-LED structure. In some embodiments, the spacing between the micro-LED arrays, i.e., the minimum center-to-center distance between the micro-LEDs, may be between about 2 micrometers and about 50 micrometers. In some embodiments, the number of pixels on the micro-LED chip may be between thousands and millions.

[0118] In some embodiments, micro-light-emitting diodes can be arranged in a regular or irregular manner on the driving backplane as pixels of the micro-light-emitting diode chip.

[0119] In some embodiments, the driving backplane can be electrically connected to each microLED in the microLED array via a separate metal interconnect. In some embodiments, each microLED can be electrically controlled individually by the driving backplane. In some embodiments, the driving backplane can be electrically connected to the electrodes of the microLED chip via a metal interconnect. In some embodiments, the driving backplane is an IC backplane.

[0120] In some embodiments, the driving backplane includes a substrate, a driving circuit, and driving electrodes. The driving circuit is located in the substrate and controls the lighting and extinguishing of the micro LEDs; the driving electrodes are located in the substrate, with at least their upper surfaces exposed, and are electrically connected to the driving circuit. Each micro LED corresponds to one driving electrode, and the micro LED is located on and electrically connected to the driving electrode.

[0121] In some embodiments, the driving electrode is made of one or more alloys of the following metals: Ni, Al, Ti, Cu, Pt, and Au. In some embodiments, the substrate is a Si substrate. In other embodiments, the substrate is a transparent substrate, such as a glass substrate. Examples of other substrates include GaAs, GaP, InP, SiC, ZnO, and sapphire substrates. In some embodiments, the substrate is approximately 700 micrometers thick. The driving circuitry forms individual pixel drivers to control the operation of individual pixel LED devices. The driving circuitry includes, for example, complementary metal oxide semiconductor (CMOS) devices or TFT devices. In some embodiments, a dielectric layer may be formed in the gaps between the micro-LEDs. In some embodiments, a dielectric layer may also be formed in the gaps between interconnects.

[0122] The driving method for miniature light-emitting diodes (LEDs) can be, for example, a passive matrix (PM) drive, in which the cathodes of all the LEDs in each array are connected to a common cathode line NL, while the LEDs with the same number in each array are connected to their respective anode lines PL. Thus, the on / off state and brightness of each LED can be individually controlled by adjusting the type of the corresponding cathode and anode lines.

[0123] In some embodiments, the micro-LEDs can be bonded to the surface of a driving backplane via a bonding layer. The driving electrode is electrically connected to the bonding layer, which includes a first metal layer and a second metal layer. In some embodiments, the first metal layer is made of one or more alloys of the following metals: Cr, Al, Ti, Ni, Pt, Au, and Sn; and / or the second metal layer is made of one or more alloys of the following metals: Cr, Al, Ti, Ni, Pt, Au, and Sn.

[0124] In some embodiments, the micro light-emitting diode includes: an epitaxial layer, an ohmic contact layer, a passivation barrier layer, and a top conductive layer.

[0125] For convenience, “upward” is used to indicate away from the drive backplate, “downward” indicates towards the drive backplate, and other directional terms such as top, bottom, above, below, directly below, and under are also explained accordingly.

[0126] In some embodiments, the micro light-emitting diode includes: an epitaxial layer, an ohmic contact layer, a top conductive layer, and a passivation barrier layer. The ohmic contact layer is located on and electrically connected to the bonding layer. The epitaxial layer is disposed on the ohmic contact layer. The passivation barrier layer at least partially covers the side surfaces of the epitaxial layer and is located between the epitaxial layer and the top conductive layer. The top conductive layer is located on the side surfaces and top surface of the epitaxial layer.

[0127] In some embodiments, the passivation barrier layer is made of, for example, a solid inorganic material or a plastic material. In some embodiments, the solid inorganic material includes SiO2, Al2O3, Si3N4, SiCN, HfO2, Ta2O5, TiO2, ZrO2, La2O3, MgO, phosphosilicate glass (PSG), borosilicate glass (BPSG), or any combination thereof. In some embodiments, the plastic material includes polymers such as SU-8, PermiNex, benzocyclobutene (BCB), or transparent plastics (resins) including spin-on glass (SOG), or combined with an adhesive microresist BCL-1200, or any combination thereof. The passivation barrier layer is transparent to light emitted by the epitaxial layer.

[0128] In some embodiments, the first metal layer of the bonding layer is in direct contact with the ohmic contact layer at the bottom of the epitaxial layer, and the second metal layer is located at the bottom layer of the bonding layer, away from the epitaxial layer, wherein the outline of the first metal layer is smaller than the outline of the second metal layer.

[0129] In some embodiments, the bottom lateral dimension of the epitaxial layer is larger than the top lateral dimension. In some embodiments, the optical platform is stepped or trapezoidal.

[0130] In some embodiments, the epitaxial layer is trapezoidal, not limited to an upright or inverted trapezoid. In some embodiments, the inclination angle of the sidewalls of the epitaxial layer ranges from 60° to 85°. In one embodiment, the lateral dimension of the bonding layer is larger than the lateral dimension of the bottom of the epitaxial layer.

[0131] In some embodiments, the epitaxial layer includes a first type epitaxial layer, a second type epitaxial layer, and a light-emitting layer located between the two. The first type epitaxial layer is located above the light-emitting layer and away from the driving backplane, while the second type epitaxial layer is located below the light-emitting layer and close to the driving backplane.

[0132] In some embodiments, the light-emitting layer is formed of a plurality of stacked quantum well layers, particularly superlattice stacked quantum well layers. Preferably, the superlattice stacked quantum well layers include multiple pairs of quantum well layers stacked with quantum barrier layers.

[0133] In one embodiment, the light-emitting layer includes a multi-quantum-well layer and an electron-blocking layer, wherein the multi-quantum-well layer is an InGaN / GaN multi-quantum-well layer, an InGaN / AlGaN multi-quantum-well layer, or an InGaAs / AlGaAs multi-quantum-well layer. In another embodiment, the first type of epitaxial layer may also be a P-type GaN layer or a P-type AlGaN layer, and the second type of epitaxial layer may be an N-type GaN layer or an N-type AlGaN layer.

[0134] In some embodiments, the first type epitaxial layer is a semiconductor material having a first type epitaxial layer and includes multiple semiconductor layers. The main substrate material of the first type epitaxial layer may be, but is not limited to, composed of at least two or more elements selected from Ga, N, As, P, In, and Al. Furthermore, the first type epitaxial layer may include, from top to bottom, a confinement layer and a waveguide layer; additionally, in some embodiments, an ohmic contact layer may be formed on the confinement layer.

[0135] In some embodiments, the second type of epitaxial layer is a semiconductor material having a second conductivity type and includes multiple semiconductor layers. The main substrate material of the second type of epitaxial layer may be, but is not limited to, materials such as Ga, N, As, P, In, or Al. Furthermore, the second type of epitaxial layer may, from top to bottom, include, but is not limited to, a waveguide layer, a confinement layer, a transition layer, and a window layer; additionally, an ohmic contact layer may be formed below the window layer.

[0136] In some embodiments, the first type of epitaxial layer is an N-type GaN layer or an N-type AlGaN layer, and the second type of epitaxial layer is a P-type GaN layer or a P-type AlGaN layer. That is, the material of the second type of epitaxial layer can be a material layer of the second conductivity type containing at least two or more of Ga, N, As, Al, In, and P elements, and the first type of epitaxial layer can be a material layer of the first conductivity type containing at least two or more of Ga, N, As, Al, In, and P elements.

[0137] In some embodiments, the light-emitting layer includes at least one quantum well layer. The thickness of the quantum well layer is between 20 nm and 40 nm, for example, 30 nm. In some embodiments, the material of the quantum well layer is GaInP / (Al x Ga 1-x ) y In 1-yP, where x ranges from 0.5 to 0.9 and y ranges from 0.3 to 0.5. For example, x is 0.8 and y is 0.5. In some embodiments, the relationship between x and y is that x is 1 to 2 times y. In some embodiments, the light-emitting layer is a multiple quantum well (MQW).

[0138] In some embodiments, one of the first type epitaxial layer and the second type epitaxial layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. In some embodiments, the N-type semiconductor layer further includes a doped N-type contact layer and an N-type cladding layer. The N-type cladding layer is formed on the doped N-type contact layer. The material of the N-type cladding layer is Al. x In 1-x P, where x ranges from 0.1 to 0.5, for example, x is 0.5. Furthermore, in these embodiments, the thickness of the N-type cladding layer is no greater than 350 nm, for example, the thickness of the N-type cladding layer is 320 nm. The doping concentration of the N-type cladding layer is 5e⁻¹. 17 cm -3 up to 1e 18 cm -3 In some embodiments, the N-type semiconductor layer further includes a doped N-type contact layer and an N-type cladding layer formed on the doped N-type contact layer. The material of the doped N-type contact layer is GaAs. In some embodiments, the thickness of the doped N-type contact layer is 10 nm to 30 nm. In some embodiments, the doping concentration of the doped N-type contact layer is 2e⁻¹. 18 cm -3 up to 1e 19 cm -3 In some embodiments, the N-type semiconductor layer further includes an N-type spacer layer formed on the N-type cladding layer. The material of the N-type spacer layer is (Al). x Ga 1-x ) y In 1-y P, where x ranges from 0.5 to 0.9 and y ranges from 0.1 to 0.5. For example, x is 0.8 and y is 0.5. In some embodiments, the relationship between x and y is that x is 1 to 2 times y. The thickness of the N-type spacer layer is 50 nm to 75 nm, for example, 65 nm. In some embodiments, the P-type semiconductor layer includes a P-type cladding layer and a doped P-type contact layer. The P-type cladding layer is formed on the light-emitting layer, and the doped P-type contact layer is formed on the P-type cladding layer.

[0139] In some embodiments, the material of the P-type coating is Al. x In 1-x P, where x is 0.3 to 0.5, for example, x is 0.5. In such an embodiment, the thickness of the P-type coating is no greater than 380 nm, for example, the thickness of the P-type coating is 360 nm.

[0140] In some embodiments, the material of the doped P-type contact layer is GaAs. The thickness of the doped P-type contact layer is 10 nm to 30 nm, for example, 20 nm.

[0141] In some embodiments, the P-type semiconductor layer further includes a P-type spacer layer formed under the P-type cladding layer, a first-doped P-type transition layer formed on the P-type cladding layer, and a second-doped P-type transition layer formed on the first-doped P-type transition layer. In some embodiments, the material of the P-type spacer layer is (Al). x Ga 1-x ) y In 1-y P, where x ranges from 0.5 to 0.9 and y ranges from 0.3 to 0.5. For example, x is 0.8 and y is 0.5. In some embodiments, the relationship between x and y is that x is 1 to 2 times y. In some embodiments, the thickness of the P-type spacer layer is 50 nm to 70 nm, for example, 65 nm.

[0142] In some embodiments, the material of the first doped P-type transition layer is (Al) x Ga 1-x ) y In 1-y P, where x ranges from 0.1 to 0.3 and y ranges from 0.3 to 0.5. For example, x is 0.17 and y is 0.5. In some embodiments, the relationship between x and y is that y is 1 to 5 times x. In some embodiments, the thickness of the first doped P-type transition layer is 20 nm to 40 nm, for example, 30 nm.

[0143] In some embodiments, the material of the second doped P-type transition layer is Al. x Ga 1-x As, where x ranges from 0.5 to 0.9, for example, x is 0.6. In some embodiments, the thickness of the second doped P-type transition layer is from 10 nm to 30 nm, for example, 20 nm.

[0144] In some embodiments, the doping concentration of the second-doped P-type transition layer is greater than the doping density of the first-doped P-type transition layer. The doping concentration of the doped P-type contact layer is 1 to 10 times that of the second-doped P-type transition layer.

[0145] In some embodiments, the doping concentration of the doped P-type contact layer is greater than the doping concentration of the second-doped P-type transition layer. Furthermore, in some embodiments, the doping concentration of the second-doped P-type transition layer is 2 to 4 times that of the first-doped P-type transition layer.

[0146] For example, the doping concentration of the first doped P-type transition layer is greater than 1e. 18 cm -3The doping density of the second-doped P-type transition layer is 2e 18 cm -3 -4e 18 cm -3 Within the range, the doping density of the doped P-type contact layer is greater than 5e 18 cm -3 In some embodiments, the electrode polarity of the ohmic contact layer is opposite to that of the top conductive layer. The ohmic contact layer may be, for example, a P-electrode or an anode electrode, and the top conductive layer may be an electrode with the opposite polarity to that of the ohmic contact layer, such as an N-electrode or a cathode electrode. In one embodiment, the ohmic contact layer, the top conductive layer, and their connecting components may be one or more combinations of graphene, indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), fluorine-doped tin oxide (FTO), or other transparent conductive oxides (TCO).

[0147] In one embodiment, adjacent top conductive layers are connected, and all top conductive layers are connected as a whole. In some embodiments, the top conductive layer can be shared by all micro-light-emitting diodes in the micro-LED array.

[0148] In some embodiments, the electrode polarity of the ohmic contact layer is opposite to that of the top conductive layer. The ohmic contact layer can be, for example, a P-electrode or an anode electrode, and the top conductive layer can be an electrode with the opposite polarity to that of the ohmic contact layer, such as an N-electrode or a cathode electrode. In one embodiment, the ohmic contact layer, the top conductive layer, and their connecting components can be one or more combinations of graphene, indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), fluorine-doped tin oxide (FTO), or other transparent conductive oxides (TCO).

[0149] In some embodiments, adjacent passivation layers are connected, and all passivation layers are connected as a whole. In one embodiment, the material of the passivation layer is one or more of silicon oxide, silicon oxynitride, aluminum oxide, and silicon nitride.

[0150] In some embodiments, the micro LED chip further includes a current spreading structure located between the micro LEDs, wherein the current spreading structure is arranged to surround the micro LEDs and is configured to electrically contact the micro LEDs and at least partially reflect the light emitted by the micro LEDs.

[0151] A current-spreading structure surrounds the miniature LED and is electrically connected to the miniature LED.

[0152] The current-spreading structure has light-reflecting capabilities on its surface facing the micro LED, for example, it is made of metal, enabling it to at least partially reflect the light emitted by the LED. The reflection process is as follows: light emitted from the LED's emissive layer passes through its transparent layer (e.g., the top conductive layer). A first portion of this light (with a sufficiently small exit angle to avoid hitting the side current-spreading structure, within a preset exit angle, such as ±20°) is emitted directly. A second portion of this light (with a sufficiently large exit angle to hit the side current-spreading structure) hits the current-spreading structure and is reflected before being emitted, changing the light path direction to within the preset exit angle, thereby effectively improving the light extraction efficiency. Preferably, the proportion of light reflected by the current-spreading structure to the light emitted by the LED can be, for example, 10% to 60%. By providing a current-spreading structure with light-reflecting capabilities, the amount of light absorbed by the sidewalls can be significantly reduced, thereby significantly increasing the total light output. Simultaneously, the current-spreading structure can also isolate light, preventing optical crosstalk between adjacent LEDs.

[0153] By arranging the current extension structure to surround the top conductive layer of the micro LED in an electrical contact manner, the electrical contact area between the current extension structure and the micro LED can be significantly increased, thereby enabling the active layer (light-emitting layer) of the micro LED to emit light more uniformly and effectively avoiding light emission only at or near the electrical contact area or excessively high brightness at or near the electrical contact area.

[0154] The bottom dimension of the current extension structure is larger than the top dimension. Because the bottoms of adjacent current extension structures are connected, the longitudinal cross-sections of two adjacent current extension structures exhibit a bifurcated peak shape.

[0155] The bottoms of adjacent current extension structures are connected, and all current extension structures are integrated into a single unit. For a micro-LED with a circular top view (i.e., cross-sectional shape), the top view of the overall current extension structure is the grid shape remaining after removing the circle. In other embodiments, the top view of the micro-LED may also be other suitable shapes, such as rectangles, squares, or regular polygons. The top view of the overall current extension structure can also be the shape remaining after removing other suitable shapes, such as the grid shape remaining after removing rectangles, squares, or polygons.

[0156] In an embodiment of the present invention, the bottom of the current extension structure is below the epitaxial layer of the micro light-emitting diode.

[0157] In embodiments of the present invention, the top of the current spreading structure may be higher than the top of the epitaxial layer; the top of the current spreading structure may also be flush with the top of the epitaxial layer; the top of the current spreading structure may also be lower than the top of the epitaxial layer (e.g., slightly lower than the top of the epitaxial layer by 0-1 micrometers). One, two, or three of the above situations may coexist in a single chip.

[0158] Preferably, the top of the current extension structure is higher than the top of the epitaxial layer of the micro-LED. By making the height of the top of the current extension structure greater than the height of the top plane of the epitaxial layer of the micro-LED, a higher current extension structure can be obtained, which further increases the chance of light reflection and increases the light extraction efficiency.

[0159] In other embodiments, the number of current extension structures can be 1 / 4 or 1 / 9 of the number of micro LEDs, with each current extension structure surrounding 4 or 9 micro LEDs, without limitation.

[0160] The current spreading structure increases the current spread between adjacent micro-LEDs, reduces the resistance between them, and decreases losses. It allows current to be spread quickly and evenly across all the micro-LEDs.

[0161] In embodiments of the present invention, the current spreading structure can be a multilayer structure, comprising one or more main metal layers. In embodiments of the present invention, the material of the main metal layer can be one or more of Pt, Au, Al, and Ag.

[0162] In some embodiments, the current spreading structure may further include: an isolation layer corresponding to each main metal layer; wherein the isolation layer and the main metal layer are staggered, and each main metal layer is located on the corresponding isolation layer.

[0163] By employing isolation layers that correspond one-to-one with each main metal layer, and by staggering these isolation layers with each main metal layer located on its corresponding isolation layer, the influence of electromigration within the current extension structure can be effectively suppressed. This is particularly beneficial in micro-LED display chips where the density of micro-LEDs is high, as the isolation layers allow for an increase in the height of the current extension structure, thereby further improving the light extraction efficiency. Furthermore, the isolation layer can include a titanium (Ti) metal layer. It should be noted that the isolation layer material can also include other suitable materials, such as titanium nitride (TiN).

[0164] In some embodiments, the current extension structure may further include: an adhesive layer located at the bottom of the current extension structure, with the isolation layer and the main metal layer located on top of the adhesive layer. Forming an adhesive layer between the micro-LEDs, with the isolation layer and the main metal layer located on top of the adhesive layer, can effectively improve the bottom stability of the current extension structure through the adhesive effect of the adhesive layer. Especially when the density of micro-LEDs in a micro-LED display chip is high, the adhesive layer can increase the height of the current extension structure, thereby further improving the light extraction efficiency through a higher current extension structure. Furthermore, the adhesive layer may include a chromium (Cr) metal layer. It should be noted that the material of the adhesive layer may also include other suitable materials, such as one or more of the following: titanium (Ti), titanium nitride (TiN), and tungsten (W).

[0165] In embodiments of the present invention, the current spreading structure may further include: anti-diffusion layers corresponding one-to-one with the isolation layers, with each isolation layer located on the corresponding anti-diffusion layer. By forming anti-diffusion layers corresponding one-to-one with the isolation layers, and with each isolation layer located on the corresponding anti-diffusion layer, the stability of the current spreading structure can be improved by utilizing the high hardness and good corrosion resistance of the anti-diffusion layers. Especially in micro-LED display chips with a high density of micro-LEDs, the height of the current spreading structure can be increased by setting the anti-diffusion layer, thereby further improving the light extraction efficiency through a higher current spreading structure. The anti-diffusion layer may include: a platinum (Pt) metal layer or a nickel (Ni) metal layer. It should be noted that the anti-diffusion layer may be a single platinum metal layer, a single nickel metal layer, or a stack of single platinum metal layers and single nickel metal layers.

[0166] In some embodiments, the micro-LED chip further includes a microlens array. The microlens array is disposed above the micro-LED array, wherein at least one microlens is disposed on the surface of the conductive layer on top of the micro-LED, and the horizontal profile of the microlens is larger than the maximum horizontal profile of the micro-LED. The microlens are mainly used to converge and / or collimate light rays; for example, the focal point of the microlens can be located in the epitaxial layer of the micro-LED by adjusting parameters such as the thickness and curvature of the microlens. In some embodiments, the microlenses of the microlens array correspond one-to-one with the epitaxial layer. In some embodiments, examples of microlenses include spherical microlenses, aspherical microlenses, Fresnal microlenses, and cylindrical microlenses.

[0167] In an embodiment of the invention, a gap exists between adjacent microlenses. In another embodiment, the bottom of the gap is higher than the top of the epitaxial layer. In yet another embodiment, the bottom of the gap is lower than the top of the epitaxial layer but higher than the bottom of the epitaxial layer. In yet another embodiment, the bottom of the gap is located above the current spreading structure. Specifically, the gap is located between two adjacent current spreading structures (i.e., between bifurcation peaks).

[0168] Furthermore, the microlens may also have air gaps inside. Each lens may have multiple air gaps, and the size and length of each air gap may be the same or different. Simultaneously, within the same chip, the number and / or location and / or size of air gaps in different microlenses may be the same or different. In some embodiments of the present invention, the air gaps are located at the edges of the microlens, specifically, for example, on both sides of the epitaxial layer, preferably between the epitaxial layer and the current spreading structure. In some embodiments, the top of the air gap is higher than the top of the epitaxial layer, and its bottom may be higher or lower than the top of the epitaxial layer. In some embodiments, the bottom of the air gap is higher than the top of the current spreading structure. In still other embodiments, the bottom of the air gap is lower than the top of the current spreading structure. It should be noted that in other embodiments of the present invention, the microlens may also have no air gaps inside.

[0169] In some embodiments, the micro LED chip includes a light-emitting region and a non-light-emitting region, wherein the micro LED, the current spreading structure, and the microlens array are located in the light-emitting region. The non-light-emitting region surrounds the light-emitting region.

[0170] In some embodiments, the non-light-emitting area of ​​the micro LED chip has wire bonding electrodes, which are electrically connected to a driving backplane. The wire bonding electrodes are used for electrical connection to a circuit board external to the chip.

[0171] While some embodiments of the present invention have been described in this application, those skilled in the art will understand that these embodiments are merely illustrative. Numerous variations, alternatives, and improvements will arise in those skilled in the art under the teachings of this invention without departing from its scope. The appended claims are intended to define the scope of the invention and thereby cover methods and structures within the scope of the claims themselves and their equivalents.

Claims

1. A global scanning method with misalignment, characterized in that, include: The micro-display panel is divided into multiple display groups, each display group consisting of one or more rows of micro-light-emitting diodes; Determine the scan misalignment duration between display groups with adjacent scan times; and The multiple display groups of the micro-display panel are scanned sequentially according to the misalignment duration.

2. The global scanning method with misalignment according to claim 1, characterized in that, One or more rows of miniature light-emitting diodes that are scanned using the same set of scanning signals are grouped into a display group.

3. The global scanning method with misalignment according to claim 1, characterized in that, Each display group includes multiple rows of miniature light-emitting diodes, which may or may not be adjacent in position.

4. The global scanning method with misalignment according to claim 1, characterized in that, The scanning misalignment time between adjacent display groups is determined based on the scanning cycle of a frame of image data, the number of display groups, and the duty cycle.

5. The global scanning method with misalignment according to claim 4, characterized in that, The scanning period T of a frame of image data is related to the number of display groups M, the scanning misalignment time t, and the duty cycle D by the following formula: T≥(D*T)+t*(M-1), Where M is a positive integer, t, T and D are positive numbers, and the scan misalignment time t and duty cycle D are fixed values.

6. The global scanning method with misalignment according to claim 5, characterized in that, The larger the duty cycle, the more display groups there are, and the smaller the maximum value of the scan misalignment time.

7. The global scanning method with misalignment according to claim 5, characterized in that, The duty cycle D is less than 1.

8. The global scanning method with misalignment according to claim 1, characterized in that, The scan time is the same for each display group.

9. The global scanning method with misalignment according to claim 1, characterized in that, The interval between the scan start time points of two adjacent display groups is equal to the scan misalignment duration.

10. The global scanning method with misalignment according to claim 9, characterized in that, The scanning of multiple display groups of the micro-display panel according to the misalignment duration includes: First, the first display group is scanned. After the first scan misalignment time, the second display group is scanned, and so on. After the (M-1)th scan misalignment time, the Mth display group is scanned.

11. The global scanning method with misalignment according to claim 2, characterized in that, A set of scan signals contains multiple bits of data.

12. The global scanning method with misalignment according to claim 11, characterized in that, During scanning, a set of scan signals is transmitted by multiple signal lines.

13. The global scanning method with misalignment according to claim 12, characterized in that, Each signal line transmits one bit of data.

14. The global scanning method with misalignment according to claim 13, characterized in that, When a display group contains multiple rows of miniature light-emitting diodes, a set of scan signals contains multiple sub-signal groups, and each sub-signal group contains multiple bits of data.

15. The global scanning method with misalignment according to claim 13, characterized in that, If a display group contains a row of miniature light-emitting diodes, during scanning, there is an interval between the start times of transmission of two adjacent bits of data.

16. The global scanning method with misalignment according to claim 14, characterized in that, If a display group contains multiple rows of miniature light-emitting diodes, during scanning, there is an interval between the start times of transmission of two adjacent bits of data in each sub-signal group.

17. The global scanning method with misalignment according to claim 15 or 16, characterized in that, The interval between the start times of transmission of two adjacent bits of data is equal to the pulse length of the previous bit's data transmission.

18. The global scanning method with misalignment according to claim 17, characterized in that, The pulse length of each bit of data increases sequentially.

19. The global scanning method with misalignment according to claim 10, characterized in that, The micro-display panel includes multiple micro-display panels, and each micro-display panel includes multiple display groups.

20. A micro-display system, characterized in that, include: One or more micro-display panels; as well as A controller configured to perform the global scan method with misalignment as described in any one of claims 1 to 19.

21. The microdisplay system according to claim 20, characterized in that, The micro-display panel includes: Miniature light-emitting diode chips, configured to emit light; and A circuit board that is electrically connected to the micro LED chip.

22. The microdisplay system according to claim 21, characterized in that, The miniature light-emitting diode chip includes: Drive backplane; and Multiple miniature light-emitting diodes are arranged in an array on the drive backplane.

23. The microdisplay system according to claim 22, characterized in that, The miniature light-emitting diode includes: Epitaxial layer; A top conductive layer, the top conductive layer being located on the side and top surfaces of the light-emitting platform; and A passivation barrier layer, the passivation barrier layer at least partially covering the side surface of the epitaxial layer, and the passivation barrier layer being located between the epitaxial layer and the top conductive layer.

24. The microdisplay system according to claim 22, characterized in that, The drive backplate includes: substrate; A driving circuit, located in the substrate, is configured to control the lighting and extinguishing of the micro LEDs; The driving electrode is electrically connected to the driving circuit and the micro LED chip.

25. The microdisplay system according to claim 24, characterized in that, The micro LEDs are located on the driving electrodes, and each micro LED corresponds to one driving electrode.

26. The microdisplay system according to claim 22, characterized in that, The micro LED chip further includes a current spreading structure located between the micro LEDs, wherein the current spreading structure is arranged to surround the micro LEDs and is configured to electrically contact the micro LEDs and at least partially reflect the light emitted by the micro LEDs.

27. The microdisplay system according to claim 22, characterized in that, The micro LED chip also includes microlenses disposed on the micro LED, with adjacent microlenses connected to each other.

Images