Heterogeneous stacked segmented compensated reconfigurable metasurface and design method

Abstract

This application provides a heterogeneous stacked segmented compensated reconfigurable metasurface and its design method, belonging to the field of metasurfaces. It includes: a plurality of arrayed metasurface units, each metasurface unit comprising a stacked patch layer, a heterogeneous stacked structure, and an active circuit layer; the patch layer includes a transmitting metal patch and a receiving metal patch; the active circuit layer includes a segmented compensation network, an active gain compensation module, and a bias control network; the input terminal of the active gain compensation module is connected to the receiving metal patch, and the output terminal of the bias control module is connected to the transmitting metal patch; the segmented compensation network is used to adjust the equivalent reactance, transmission phase, and center frequency offset under different reconfigurable states; the active gain compensation module is used to perform amplitude compensation on the RF signal of the receiving metal patch; the bias control network is used to provide DC bias for the controllable devices in the segmented compensation network and the active gain compensation module.

Description

Technical Field

[0001] This application belongs to the field of reconfigurable metasurfaces, and in particular relates to a heterogeneous stacked segmented compensating reconfigurable metasurface and its design method. Background Technology

[0002] Metasurfaces are two-dimensional artificial electromagnetic structures formed by the periodic or aperiodic arrangement of subwavelength artificial electromagnetic units. By adjusting the geometry of the units, the equivalent current path, the state of the loaded devices, and the array coding distribution, metasurfaces can achieve functions such as reflection phase modulation, beam deflection, beamforming, polarization control, and spatial coverage enhancement. Compared with traditional parabolic reflectors and large-scale phased arrays, reconfigurable metasurfaces have advantages such as low profile, easy integration, lightweight structure, and lower cost, making them suitable for future wireless communication, radar detection, and the construction of intelligent wireless environments.

[0003] However, traditional passive reconfigurable metasurfaces suffer from significant energy loss issues when operating at high frequencies. On one hand, controllable devices such as PIN diodes, varactor diodes, and MEMS switches introduce insertion loss and parasitic inductance / capacitance. On the other hand, multi-state phase switching typically relies on changes in microstrip delay lines, loading slots, or equivalent transmission paths. When the operating frequency is in the C-band or higher, path switching can lead to significant impedance disturbances and center frequency shifts. Especially in multi-state phase control, while one state may meet the target frequency, another state may experience resonant frequency shifts, phase spacing inaccuracies, or inconsistent amplitude responses, thereby reducing the accuracy of array beamforming.

[0004] In recent years, active metasurfaces have provided a new solution for improving system link margin by introducing RF amplification modules to compensate for spatial propagation loss, switching device loss, and microstrip network loss. However, the input / output matching, bias network, and packaging parasitic parameters of active devices further alter the equivalent electromagnetic boundary of the metasurface unit, making it more difficult to guarantee phase and amplitude consistency between different reconfigurable states. If a single delay line phase modulation structure is still used, it easily leads to problems such as increased network area, inter-state frequency drift, and difficulty in simultaneously satisfying active matching requirements.

[0005] Furthermore, C-band active metasurface units typically require the integration of radiating patches, microstrip matching networks, stub tuning structures, switching devices, active amplifier modules, and DC bias circuitry within a limited area. If a single dielectric material is used for both the upper and lower layers, a trade-off between electromagnetic performance and mechanical reliability can easily arise: low-dielectric-constant, low-loss materials are beneficial for radiation efficiency, but may lead to larger linewidths and a crowded layout in the high-density microstrip wiring of the lower layer; thicker substrates are beneficial for mechanical strength, but will complicate microstrip impedance control and parasitic coupling. Therefore, a novel reconfigurable metasurface structure is needed that can balance C-band electromagnetic performance, mechanical strength, active device carrying capacity, and multi-state phase consistency.

[0006] To address the aforementioned issues, this invention proposes a heterogeneous stacked spur-compensated reconfigurable metasurface. Instead of relying on traditional orthogonal slotted patches and fixed delay line phase shifters as the core, this approach utilizes an H-shaped multimode resonant patch to provide multi-path coupling degrees of freedom, a spur-compensated network to achieve state-dependent phase and frequency compensation, and a heterogeneous stacked dielectric structure to balance high-frequency electromagnetic performance and mechanical reliability. This approach distinguishes itself from existing active amplification reconfigurable metasurfaces. Summary of the Invention

[0007] This invention provides a heterogeneous stacked branch-compensated reconfigurable metasurface and its design method, which solves the problems of high insertion loss, center frequency shift between states, unstable phase spacing, large area occupied by microstrip delay lines, and insufficient mechanical strength of multilayer boards in existing passive or active reconfigurable metasurfaces.

[0008] In a first aspect, this application provides a heterogeneous stacked segmented compensated reconfigurable metasurface, comprising: A plurality of arrayed metasurface units, each metasurface unit comprising a stacked patch layer, a heterogeneous stacked structure and an active circuit layer; the patch layer comprising an emitting metal patch and a receiving metal patch; The active circuit layer includes a stub compensation network, an active gain compensation module, and a bias control network; the input terminal of the active gain compensation module is connected to the receiving metal patch, and the output terminal of the bias control module is connected to the transmitting metal patch. The stub compensation network is used to adjust the equivalent reactance, transmission phase, and center frequency offset under different reconfigurable states; the active gain compensation module is used to perform amplitude compensation on the RF signal received from the metal patch; and the bias control network is used to provide DC bias for the controllable devices in the stub compensation network and the active gain compensation module.

[0009] Optionally, the spur compensation network includes at least one phase compensation spur, which is selectively connected to the main transmission line used to transmit the radio frequency signal of the metal patch through a controllable switching device to adjust the transmission phase of the radio frequency signal.

[0010] Optionally, the phase compensation stub is one or more of the following: open-circuit stub, short-circuit stub, T-shaped stub, cross stub, radial stub, folded stub, or composite stub loaded with lumped capacitance / inductance.

[0011] Optionally, the spur compensation network is disposed between the receiving metal patch and the active gain compensation module; or, the spur compensation network is disposed between the transmitting metal patch and the active gain compensation module.

[0012] Optionally, the heterogeneous laminated structure includes a stacked first dielectric layer, a ground isolation layer, and a second dielectric layer, wherein the first dielectric layer and the second dielectric layer are configured with at least one of different dielectric materials, different dielectric constants, different thicknesses, different loss tangents, or different mechanical strengths.

[0013] Optionally, the transmitting metal patch and the receiving metal patch are H-shaped multimode resonant patches, and the transmitting metal patch and the receiving metal patch are arranged vertically on a plane.

[0014] Secondly, this application provides a design method for a heterogeneous stacked segmented compensated reconfigurable metasurface, including: Establish a simulation model of the metasurface unit; Based on the simulation model, the parameters of the patch layer, the support compensation network, and the heterogeneous stacked structure are jointly optimized by multiple objectives to obtain the design parameters of the metasurface unit, so that multiple reconfigurable states meet the preset phase spacing, amplitude consistency, and center frequency consistency requirements at the target frequency.

[0015] Optionally, the steps for establishing a simulation model of the metasurface element include: A three-dimensional electromagnetic model of the patch layer, heterogeneous stacked structure, and support compensation network is established, and the equivalent circuit model of the active gain compensation module and bias control network is introduced to obtain the simulation model of the metasurface unit.

[0016] Optionally, the objective function used in the multi-objective joint optimization process is:

[0017] In the formula: In the formula, to These are the weighting coefficients; For adjacent reconfigurable states at the target frequency Phase difference at; For target phase stepping; For the first The center frequency of a reconfigurable state; The target operating frequency; For the first A reconfigurable state at the target frequency The amplitude response at that point; It is the average value of the magnitude response of multiple reconfigurable states; and These represent the matching status of the input port and the output port, respectively. This indicates the stability metrics of the active gain compensation module. This section represents the process constraints corresponding to machining dimensions, component soldering, via spacing, trace spacing, and material thickness limitations. This indicates a penalty term introduced when port matching, active stability, or process constraints do not meet preset conditions.

[0018] Optionally, the optimization methods used in the multi-objective joint optimization process include genetic algorithms, particle swarm optimization, response surface optimization, and Bayesian optimization.

[0019] The beneficial effects of the technical solution provided in this application include: (1) Near the target frequency in the C-band, the coordinated adjustment of the H-shaped multimode resonant patch and the stub compensation network enables multiple reconfigurable states to have relatively stable phase differences and similar amplitude responses; the active gain compensation module cancels out the losses of switches, stubs, vias and dielectrics; and the heterogeneous dielectric stack structure improves the processing, welding and service stability of the active metasurface unit. The H-shaped multimode resonant patch provides higher structural control freedom. The two vertical arms and the middle crossbeam of the H-shaped patch form multiple surface current paths, and multiple resonant modes can be jointly adjusted by the arm length, gap, crossbeam position and feed point. Compared with ordinary rectangular patches or single slotted patches, it is more suitable for realizing multi-state impedance and phase adjustment within a limited unit area. The heterogeneous stack structure takes into account both electromagnetic performance and mechanical reliability. The radiating side dielectric layer uses low-loss materials to ensure C-band efficiency, and the circuit side dielectric layer uses materials with higher mechanical strength or higher thermal stability to support active devices and high-density microstrip networks, thereby reducing the impact of board warpage, welding stress and thermal deformation on electromagnetic performance.

[0020] (2) The stub compensation network reduces center frequency drift caused by state switching. This invention does not rely on simply extending the physical transmission line to obtain the phase difference, but instead uses switchable stubs to change the equivalent reactance and local resonance state, thereby simultaneously adjusting the phase, impedance, and center frequency. This method is beneficial for solving the problem of significant frequency shift in certain states during phase modulation of traditional delay lines. Active gain compensation and state consistency are designed in a coordinated manner. This invention optimizes the active gain compensation module, stub compensation network, and H-shaped patch in a unified way, so that amplifier port matching is no longer simply superimposed as an independent subsequent stage, but is coordinated and adjusted as part of the multi-state amplitude and phase response, which is beneficial for improving amplitude consistency in high-gain reconfigurable states.

[0021] (3) Suitable for expansion into array and multi-scenario beamforming. Multiple units form an array phase distribution through discrete coding or continuous tuning, and combined with active gain compensation, it can be used for blind zone coverage enhancement, reflection beam scanning, hotspot area signal enhancement and spatial channel reconstruction in future wireless communications. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0023] Figure 1 A schematic diagram of a heterogeneous stacked segmented compensated reconfigurable metasurface provided in an embodiment of this application; Figure 2 This is a top view of a heterogeneous stacked segmented compensated reconfigurable metasurface provided in an embodiment of this application; Figure 3 This is a schematic diagram of the structure of an active circuit layer provided in an embodiment of this application; Figure 4 A cross-sectional view of a heterogeneous laminated segmented compensating reconfigurable metasurface provided in an embodiment of this application; Figure 5 A schematic diagram of a spur compensation network provided in an embodiment of this application; Figure 6 A schematic diagram of an active gain compensation module provided in an embodiment of this application; Figure 7 A flowchart of a design method for a heterogeneous stacked segmented compensated reconfigurable metasurface provided in an embodiment of this application; Figure 8 A flowchart of field-road cooperative simulation provided in one embodiment of this application; Figure 9 This is a comparison diagram of multi-state phase response provided in an embodiment of this application; Figure 10 This is a multi-state amplitude compensation response diagram provided in an embodiment of this application. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0025] One embodiment of this application provides a heterogeneous stacked segmented compensated reconfigurable metasurface, comprising: Several arrayed metasurface units.

[0026] See Figures 1 to 4 Each of the metasurface units includes: The stacked patch layer 1, the heterogeneous stacked structure 2, and the active circuit layer 3.

[0027] The patch layer 1 is used to form a multimode resonant response in the target frequency band.

[0028] See Figure 2 In some examples provided in this application, the patch 1 includes an emitting metal patch 11 and a receiving metal patch 12, wherein the emitting metal patch 11 and the receiving metal patch 12 are H-shaped multimode resonant patches.

[0029] In some examples, the H-shaped multimode resonator patch provided in this application includes: The first metal arm 111 and the second metal arm 112 are parallel to each other, and the third metal arm 113 is disposed between the first metal arm and the second metal arm and is perpendicularly connected to the first metal arm and the second metal arm at both ends, respectively. The first metal arm, the second metal arm and the third metal arm together form at least two surface current paths that can participate in resonance.

[0030] In the embodiments provided in this application, the transmitting metal patch and the receiving metal patch are perpendicular to each other in the patch layer. Specifically, the extension line of the first metal arm of the transmitting metal patch is perpendicular to the extension line of the first metal arm of the receiving metal patch, the extension line of the second metal arm of the transmitting metal patch is perpendicular to the extension line of the second metal arm of the receiving metal patch, and the extension line of the third metal arm of the transmitting metal patch is perpendicular to the extension line of the third metal arm of the receiving metal patch.

[0031] In some examples, a feed point and a switch loading position are provided on the H-shaped multimode resonant patch. The feed point is located in a predetermined central region of the H-shaped multimode resonant patch and electrically connected to one end of an RF metallized via, used to realize RF signal transmission between the patch layer and the active circuit layer. The switch loading position is used to set a PIN diode or other lumped loading element, so that the equivalent current path, local reactance, and resonant frequency in different reconfigurable states can be controllably changed. In this embodiment, by adjusting the arm length, arm width, beam width, opening gap, feed position, and switch loading position of the H-shaped patch, multimode coupled resonance can be generated near the target C-band, which can improve the miniaturization, impedance matching, and multi-state phase response of the metasurface unit.

[0032] Miniaturization refers to utilizing an H-shaped structure to create a bent and coupled equivalent current path under conditions of limited target operating frequency and cell period, enabling the patch to achieve an equivalent resonant length that meets the target frequency requirements within a smaller planar projected area. Impedance matching refers to changing the current distribution ratio on the metal arms on both sides and the crossbeam in the middle of the H-shaped multimode resonant patch, the equivalent current path length, and the local capacitance / inductance loading state, so that the equivalent input impedance of the patch matches the equivalent impedance of the subsequent stub compensation network, active gain compensation module, or output coupling structure, thereby reducing reflection loss near the target frequency and improving RF energy coupling efficiency. Multi-state phase response refers to changing the equivalent current path, local resonance intensity, and coupling state with the stub compensation network of the H-shaped multimode resonant patch under different reconfigurable states, so that the metasurface cells form different transmission or reflection phases near the target frequency.

[0033] In this embodiment, the H-shaped patch can be used as a receiving resonant structure, a radiating resonant structure, or a transmitting-receiving composite resonant structure. When used as a radiating resonant structure, the H-shaped patch is a transmitting metal patch. When used as a receiving resonant structure, the H-shaped patch is a receiving metal patch.

[0034] In some examples, the heterogeneous stacked structure 2 provided in this application includes: The first dielectric layer 21, the grounding isolation layer 22, and the second dielectric layer 23 are stacked.

[0035] In this embodiment, the heterogeneous dielectric stack structure is used to improve the mechanical stability of the reconfigurable metasurface unit while maintaining its electromagnetic properties.

[0036] In some examples, the heterogeneous dielectric stack structure 2 includes a first dielectric layer and a second dielectric layer, wherein the first dielectric layer is used to carry or be adjacent to the H-shaped multimode resonant patch, and the second dielectric layer is used to carry the active circuit layer; the first dielectric layer and the second dielectric layer are configured with at least one of different dielectric materials, different dielectric constants, different thicknesses, different loss tangents, or different mechanical strengths.

[0037] In some examples, the first dielectric layer is a low-loss, high-frequency dielectric layer, and the second dielectric layer is a high-mechanical-strength or high-thermal-stability dielectric layer; the thickness of the second dielectric layer is greater than the thickness of the first dielectric layer, or the relative permittivity of the second dielectric layer is greater than the relative permittivity of the first dielectric layer, in order to improve the compactness of circuit layer wiring and the mechanical rigidity of multilayer boards.

[0038] In the heterogeneous laminated structure, the first dielectric layer preferably uses a low-loss, high-frequency stable dielectric material to improve the receiving and radiating efficiency of the H-shaped patch; the second dielectric layer preferably uses a dielectric material with high dielectric constant, high mechanical strength, and good thermal stability to support the support compensation network, active devices, and bias circuitry. Through the differentiated design of the first and second dielectric layers, the overall rigidity of the multilayer board is improved while maintaining the electromagnetic performance of the target frequency band, reducing the risk of warping during processing, welding, and service.

[0039] In some examples, the active circuit layer 3 provided in this application includes: The system comprises a spur compensation network 31, an active gain compensation module 32, and a bias control network 33. The spur compensation network 31 adjusts the equivalent reactance, transmission phase, and center frequency offset under different reconfigurable states. The active gain compensation module 32 performs amplitude compensation on the radio frequency signal. The bias control network 33 provides DC bias for the controllable devices in the spur compensation network 31 and the active gain compensation module 32.

[0040] In some examples, the spur compensation network 31 provided in this application includes: A phase compensation stub is used to adjust the transmission phase under different reconfigurable states.

[0041] In some examples, the phase compensation stub provided in this application includes: One or more of the following: open-circuit branch, short-circuit branch, T-shaped branch, cross branch, radial branch, folded branch, or composite branch with lumped capacitance / inductance.

[0042] In some examples, the stub compensation network 31 connects or disconnects different stubs through PIN diodes, varactor diodes, MEMS switches, RF switch chips or other controllable devices, so that the reconfigurable metasurface unit forms multiple discrete or continuously adjustable amplitude and phase states.

[0043] In some examples, the spur compensation network 31 is disposed between the H-shaped multimode resonant patch and the active gain compensation module 32, or between the active gain compensation module 32 and the output coupling structure, or distributed at multiple locations in the active circuit layer.

[0044] The stub compensation network includes at least one phase compensation stub. By adjusting the length of the short stub, the length of the long stub, the connection position of the stub to the main transmission line, and the equivalent parasitic parameters of the controllable switching device, a preset transmission phase difference can be obtained near the target frequency point for different reconfigurable states, and the center frequency drift and amplitude response differences caused by state switching can be reduced.

[0045] In some examples, the phase switching, by switching the access states of short and long branches, allows the branch compensation network 31 to form different equivalent reactance and equivalent susceptance states, thereby obtaining different transmission phases. For example, in a two-bit reconfigurable state, the target phase step between adjacent states can be set to approximately 90°.

[0046] Unlike traditional methods that rely on long physical delay lines to obtain a fixed phase difference, this invention adjusts the equivalent susceptance, local resonance, and impedance matching state of the circuit through a branch network. This enables the reconfigurable unit to not only obtain a preset phase difference in different states, but also reduce the center frequency drift caused by state switching.

[0047] See Figure 5 In one embodiment provided in this application, the spur compensation network 31 includes: The main transmission line, input terminal, output terminal, short stub Ls, long stub Ll, first controllable switch D4, second controllable switch D3, and two open terminals.

[0048] The short stub Ls and the long stub Ll are respectively connected to the same node or adjacent nodes of the main transmission line, and both of their ends are set as open circuit terminals. The short stub Ls is connected to the main transmission line through a first controllable switch device D4, and the long stub Ll is connected to the main transmission line through a second controllable switch device D3.

[0049] The first controllable switching device D4 and the second controllable switching device D3 can be PIN diodes, MEMS switches, RF switching chips, transistor switches or other controllable switching devices, used to control the connection or disconnection of short stub Ls and long stub Ll relative to the main transmission line.

[0050] When the first controllable switch D4 is turned on and the second controllable switch D3 is turned off, the short stub Ls is connected to the main transmission line, and the long stub L1 is in the off state. The stub compensation network 31 forms a first equivalent compensation state. In this state, the short stub Ls introduces a first equivalent susceptance and local resonance condition at the node of the main transmission line, thereby causing the radio frequency signal to form a first transmission phase or a first reflection phase response near the target frequency.

[0051] When the first controllable switch D4 is turned off and the second controllable switch D3 is turned on, the short stub Ls is in the open state, and the long stub Ll is connected to the main transmission line, forming a second equivalent compensation state in the stub compensation network 31. In this state, the long stub Ll, having a different physical length and equivalent electrical length than the short stub Ls, can introduce a second equivalent susceptance and local resonance conditions at the main transmission line node, thereby causing the radio frequency signal to form a second transmission phase or a second reflection phase response near the target frequency.

[0052] Because the short stub Ls and the long stub Ll have different lengths, they exhibit different equivalent reactances or equivalent susceptances at the target C-band frequency. By switching the conduction states of D4 and D3, the local loading conditions, impedance matching state, and phase response of the main transmission line can be changed, allowing the stub compensation network 31 to form different amplitude and phase responses under different reconfigurable states. By further adjusting the length of the short stub Ls, the length of the long stub Ll, the stub width, the stub connection position, and the equivalent on-resistance, off-resistance, and parasitic inductance of the controllable switching devices, a preset phase difference can be obtained near the target frequency under different states, and the center frequency shift and amplitude response differences caused by state switching can be reduced.

[0053] In some examples, D4 and D3 can also form an extended control state. For example, when both D4 and D3 are off, neither the short stub Ls nor the long stub Ll is connected to the main transmission line, and the main transmission line can be approximately in a reference transmission state, which can be used as a test state, calibration state, or non-operating state. When both D4 and D3 are on, both the short stub Ls and the long stub Ll are connected to the main transmission line, and the stub compensation network 31 can form a composite loading state. This state can be used to extend the phase compensation range, but whether it is used as an actual operating state should be determined according to the impedance matching, amplitude loss, and phase response requirements at the target frequency.

[0054] In some examples, the active gain compensation module 32 provided in this application includes: Radio frequency amplification devices, input matching branches, output matching branches, and bias introduction structures.

[0055] In some examples, the RF amplification device can be a low-noise amplifier, a power amplifier, a variable gain amplifier, a bidirectional amplification network, or an equivalent active two-port network, to perform amplitude compensation on the RF signal coupled via an H-shaped multimode resonant patch and compensated by the stub compensation network 31.

[0056] In some examples, the input matching branch includes one or more of the following: input microstrip line segment, series capacitor, parallel capacitor, series inductor, parallel inductor, open-circuit matching branch, short-circuit matching branch, stepped impedance line segment, DC blocking capacitor, or RF choke structure.

[0057] The input matching branch is positioned between the stub compensation network 31 and the input terminal of the RF amplifier device, and is used to transform the equivalent impedance at the output terminal of the stub compensation network 31 to the input matching range of the RF amplifier device. By adjusting the line length, stub length, stub connection position, or lumped element parameters of the input matching branch, the reflection loss between the stub compensation network 31 and the input terminal of the RF amplifier device can be reduced, and the input port matching consistency under different reconfigurable states can be improved.

[0058] In some examples, the output matching branch includes one or more of the following: output microstrip line segment, series capacitor, parallel capacitor, series inductor, parallel inductor, open-circuit matching branch, short-circuit matching branch, stepped impedance line segment, DC blocking capacitor, RF choke structure, or stabilizing damping network.

[0059] The output matching branch is placed between the output terminal of the RF amplifier device and the output coupling structure or transmitting metal patch, and is used to transform the output impedance of the RF amplifier device to the equivalent load impedance range required by the subsequent output coupling structure or transmitting metal patch. By adjusting the structural parameters of the output matching branch, the impedance matching, transmission gain, and operating stability of the RF amplifier device output terminal can be improved.

[0060] In some examples, the bias introduction structure includes a bias input, an RF choke element, a decoupling capacitor, a bypass capacitor, a DC blocking capacitor, and a ground terminal.

[0061] The bias input terminal is used to receive external DC power supply voltage or control voltage, and is connected to the power supply terminal or bias terminal of the RF amplifier device through an RF choke element, so that the RF amplifier device is in a preset operating state. The RF choke element can be an RF choke inductor, a high-impedance microstrip line, a quarter-wavelength high-impedance line, or a low-pass filter structure. It is used to introduce the external DC bias voltage into the active gain compensation module 32.

[0062] The decoupling capacitor and bypass capacitor are connected between the bias input terminal or the bias terminal of the RF amplifier device and the ground terminal to filter out DC power supply noise and provide a ground bypass for RF signals leaking to the bias line. The DC blocking capacitor is located on the input side and / or output side of the RF amplifier device to block DC bias voltage from entering the pre-stage stub compensation network 31 or the post-stage output coupling structure, while allowing the target frequency band RF signal to pass through.

[0063] In the embodiments provided in this application, the input matching branch and the output matching branch are not only used for impedance matching in a single state, but together with the stub compensation network 31, they constitute a state consistency compensation structure. Specifically, the stub compensation network 31 changes the equivalent reactance, equivalent susceptance, and local resonance conditions of the main RF transmission path under different switching states. The input matching branch and the output matching branch are used to compensate for the impedance changes at the amplifier input and output terminals caused by these changes, so that multiple reconfigurable states simultaneously meet the preset transmission phase difference, amplitude consistency, and port matching requirements near the target frequency.

[0064] See Figure 6 In some embodiments, the active gain compensation module 32 includes: This includes the input terminal, input-side DC blocking capacitor, RF amplification device, ground terminal, bias terminal, drain bias point, RF choke, bias resistor, power supply Vcc, bypass capacitor, output-side DC blocking capacitor, and output terminal.

[0065] The input terminal is used to receive radio frequency signals from the stub compensation network 31 or the front-end microstrip circuit. The input-side DC blocking capacitor is connected in series between the input terminal and the input terminal of the radio frequency amplification device to allow the target frequency band radio frequency signal to pass through, while blocking the leakage of DC bias voltage towards the front-end stub compensation network 31 or the H-shaped multimode resonant patch.

[0066] The input-side DC blocking capacitor can also work in conjunction with the input microstrip line segment or the input matching branch to improve the impedance matching at the input of the RF amplifier device.

[0067] The radio frequency (RF) amplifier device is used to compensate the amplitude of the input RF signal. It can be a low-noise amplifier, power amplifier, variable gain amplifier, transistor amplifier circuit, or equivalent active two-port network. The triangle symbol in the figure represents the RF amplifier device body; its input terminal is connected to the input-side DC blocking capacitor, and its output terminal is connected to the drain bias point. The ground terminal provides a DC reference potential and an RF return path for the RF amplifier device.

[0068] The drain bias point is located on the output side of the RF amplifier device, used to simultaneously connect the RF output path and the DC bias path. After the RF signal is output from the RF amplifier device, it is transmitted through the drain bias point to the DC blocking capacitor on the output side, and then output from the output terminal to the subsequent output coupling structure or the transmitting metal patch.

[0069] The output-side DC blocking capacitor is used to block the DC voltage at the drain bias point from entering the subsequent RF path or external port, while allowing the target frequency band RF signal to pass through.

[0070] The RF choke is connected between the drain bias point and the power supply Vcc to introduce the DC bias voltage into the drain or output bias terminal of the RF amplifier device. At the same time, it presents a high impedance to the RF signal in the target C-band, preventing the RF signal from leaking to the power supply terminal along the DC bias line.

[0071] The RF choke can be implemented using a lumped inductor, a high-impedance microstrip line, a quarter-wavelength high-impedance line, or an equivalent RF choke structure.

[0072] The bias resistor is positioned between the RF choke and the power supply Vcc or in the bias branch to limit the bias current, stabilize the bias operating point, or suppress low-frequency oscillations. The power supply Vcc provides the DC operating voltage to the RF amplification device.

[0073] The bypass capacitor is connected between the power supply Vcc or bias node and the ground terminal to filter out power supply noise and low-frequency ripple, and to provide a ground bypass for residual RF signals leaking into the bias line, thereby reducing the disturbance of the bias line to the main RF path.

[0074] Figure 6 The bias terminal is used to provide the required bias current or control voltage to the RF amplifier device, so that the RF amplifier device is in a preset amplification state. In the RF signal path, the RF signal passes sequentially through the input terminal, the input-side DC blocking capacitor, the RF amplifier device, the drain bias point, the output-side DC blocking capacitor, and the output terminal; in the DC bias path, the DC voltage is introduced from the power supply Vcc through the bias resistor and the RF choke to the drain bias point, and then applied to the bias terminal or power supply terminal of the RF amplifier device. Thus, the active gain compensation module 32 can separate the RF signal path and the DC bias path, providing RF gain compensation while reducing the impact of the DC bias network on the amplitude and phase response and port matching of the target frequency band.

[0075] In some examples, the bias control network 33 provided in this application includes: RF choke structure and DC blocking structure are used to reduce the impact of DC bias circuitry on the RF response of the target frequency band.

[0076] In some examples, the RF choke structure includes one or more of the following: RF choke inductor, high-impedance microstrip line, quarter-wavelength high-impedance line, radial open-circuit stub, narrow-line high-impedance segment, or other structures that exhibit high impedance characteristics in the target frequency band.

[0077] The RF choke structure is used to create RF isolation between the DC bias path and the RF signal path. It allows the DC bias voltage or control signal to pass through while preventing the target C-band RF signal from leaking along the bias trace.

[0078] In some examples, the DC blocking structure can be a series DC blocking capacitor, a coupling capacitor, a microstrip gap coupling structure, or an equivalent high-pass coupling structure. This DC blocking structure is used to block DC bias components from entering the RF pre- or post-amplitude circuits while allowing RF signals in the target frequency band to pass through.

[0079] In the embodiments provided in this application, when the bias control network 33 is deployed, the bias traces are preferably located in the region where the RF current is weak, and maintain a preset distance from the main RF transmission path, the spur compensation network 31 and the active gain compensation module 32. Through the bias control network 33, the state control of different phases can be achieved without significantly disturbing the amplitude and phase response of the target frequency band, thereby ensuring that the phase step, center frequency and amplitude response of multiple reconfigurable states have good consistency.

[0080] In some examples, the radio frequency current path of the heterogeneous stacked segmented compensated reconfigurable metasurface can be formed as follows: when an incident electromagnetic wave irradiates patch layer 1, the H-shaped multimode resonant patch on the receiving metal patch 12 is excited to generate a surface current. The surface current is mainly distributed along the first, second, and third metal arms of the H-shaped multimode resonant patch, forming a main resonant current path and an auxiliary resonant current path between the two side metal arms and the central crossbeam. By adjusting the arm length, arm width, crossbeam size, arm spacing, feed point position, and switch loading position of the H-shaped multimode resonant patch, the distribution ratio of the surface current and the equivalent resonant length can be changed, enabling the patch to form a multimode coupled resonant response that meets impedance matching requirements near the target frequency.

[0081] The radio frequency (RF) signal on the H-shaped multimode resonant patch is led out through the feed point or coupling connection position and transmitted to the bottom microstrip circuit in the active circuit layer 3 through the RF metallized via. The RF metallized via passes through the first dielectric layer 21, the ground isolation layer 22, and the second dielectric layer 23 along the stacking direction. When the RF metallized via passes through the ground isolation layer 22, the ground isolation layer 22 is provided with via clearance holes or insulation gaps at the corresponding positions to keep the RF metallized via electrically isolated from the ground isolation layer 22, thereby realizing the RF interconnection between the patch layer 1 and the active circuit layer 3.

[0082] After the radio frequency (RF) signal enters the active circuit layer 3, it is first transmitted to the stub compensation network 31. The stub compensation network 31 alters the equivalent susceptance and local resonance conditions at the main transmission line node through short stub Ls, long stub Ll, and the first controllable switch D4 and the second controllable switch D3. When D4 is on and D3 is off, short stub Ls is connected to the main transmission line, forming a first equivalent compensation path between the main transmission line and short stub Ls. When D4 is off and D3 is on, long stub Ll is connected to the main transmission line, forming a second equivalent compensation path between the main transmission line and long stub Ll. Because short stub Ls and long stub Ll have different equivalent electrical lengths and equivalent reactances, different stub connection states enable the RF signal to obtain different transmission phases and compensate for the center frequency offset caused by state switching.

[0083] The RF signal, regulated by the spur compensation network 31, is further transmitted to the active gain compensation module 32. The RF signal enters the RF amplifier device via the input matching branch and the input-side DC blocking capacitor. After amplitude compensation in the RF amplifier device, it is output to the subsequent output coupling structure or the transmitting metal patch 11 via the output matching branch and the output-side DC blocking capacitor. The input matching branch improves the impedance matching between the spur compensation network 31 and the input terminal of the RF amplifier device, and the output matching branch improves the impedance matching between the output terminal of the RF amplifier device and the subsequent output coupling structure or the transmitting metal patch 11, thereby reducing reflection loss and improving amplitude consistency under different reconfigurable states.

[0084] When the radio frequency signal is transmitted to the transmitting metal patch 11, the H-shaped multimode resonant structure on the transmitting metal patch 11 is excited again to form a surface current, and a radiation current path is formed through its two side metal arms and the central crossbeam. Through the coordinated design of the receiving metal patch 12, the spur compensation network 31, the active gain compensation module 32 and the transmitting metal patch 11, the radio frequency signal sequentially completes the processes of reception, interlayer transmission, phase compensation, gain compensation, impedance matching and re-radiation.

[0085] Meanwhile, the bias control network 33 forms a DC bias path independent of the main RF path. For the controllable switching devices in the stub compensation network 31, the bias control network 33 applies on / off or tuning control signals to D3, D4, or other controllable switching devices through the switch bias branch to control the connection state of the short stub Ls and the long stub Ll. For the active gain compensation module 32, the bias control network 33 provides operating voltage, bias current, or enable control signals to the RF amplifier through the active device bias branch. The DC bias path is equipped with an RF choke structure, a DC blocking structure, and a filtering structure, enabling the DC bias signal to enter the controllable switching devices and the RF amplifier while suppressing the leakage of the target frequency band RF signal along the bias line, thereby achieving separation of the RF signal path and the DC bias path.

[0086] The core of this invention is not simply changing the patch shape or adding an amplifier, but rather achieving frequency and amplitude consistency between reconfigurable states through the joint design of an H-shaped multimode resonant patch and a spur compensation network. For the first... A reconfigurable state is defined at the target frequency. The complex response at the location is The goal is to simultaneously satisfy multiple conditions: the phase difference is close to the preset phase step, the amplitude difference is within the allowable range, and the center frequency offset is less than the preset threshold.

[0087] In practical implementation, state consistency compensation can be achieved in the following ways: First, the receiving / radiating resonant mode is adjusted using multiple current paths of the H-shaped patch to bring the equivalent resonant frequency of the patch in different states closer to the target frequency. Second, state-related susceptance compensation is provided using a switchable stub to keep the input and output impedances in different states within a matchable range. Third, the frequency calibration stub is used to compensate for frequency drift caused by changes in parasitic parameters of switching devices, port impedance of active devices, and microstrip path. Fourth, the amplitude differences in different states are adjusted using an active gain compensation module and a matching stub.

[0088] In a preferred embodiment, four reconfigurable states S0, S1, S2, and S3 can be set to enable it to operate at the target frequency. A phase step of approximately 90° is formed in the vicinity; in other embodiments, two states, eight states, or continuously adjustable states can also be set. Therefore, the present invention is not limited to a fixed 2-bit state, but can be extended to a multi-state or multi-bit gain-compensated reconfigurable metasurface.

[0089] In the embodiments provided in this application, multiple reconfigurable metasurface units are arranged in a one-dimensional or two-dimensional array to form a metasurface. By controlling the state of the spur compensation network and the active gain compensation module of each unit, spatial beamforming, beam scanning, coverage enhancement, or wireless environment reconstruction can be achieved.

[0090] Figure 7 This application provides a design method for a heterogeneous, stacked, branch-compensated, reconfigurable metasurface, as an embodiment of the present application. See also... Figure 7 The design method includes the following steps: S101. Establish a simulation model of the metasurface unit.

[0091] A metasurface element model was established in 3D electromagnetic simulation software. The target frequency was set to the C-band. Centered on, for example 6.9GHz is acceptable. Cell cycle. Based on the target frequency free space wavelength The selection is based on the array scanning angle, typically less than... Or approach the half-wavelength level to reduce the risk of higher-order diffraction and grating lobes.

[0092] In some examples, step S101 includes: A three-dimensional electromagnetic model of the patch layer, heterogeneous stacked structure, and support compensation network is established, and the equivalent circuit model of the active gain compensation module and bias control network is introduced to obtain the simulation model of the metasurface unit.

[0093] In some embodiments, establishing a heterogeneous stacked structure specifically includes: The first dielectric layer is located below the H-shaped multimode resonant patch and is preferably made of a low-loss, high-frequency dielectric material. The second dielectric layer is located above the active circuit layer or in its carrier area and is preferably made of a dielectric material with a higher dielectric constant, higher mechanical strength, or higher thermal stability. A grounding isolation layer is provided between the two layers. The grounding layer may have necessary via clearance holes to ensure that the RF vias remain insulated from the grounding layer when passing through it.

[0094] In one embodiment, the first dielectric layer may employ a relative permittivity. Materials with lower loss tangents are used for radiation efficiency optimization, and the second dielectric layer employs materials with relatively low permittivity. Greater than Alternatively, materials with mechanical strength exceeding that of the first dielectric layer may be used to compress the dimensions of the underlying microstrips and increase the rigidity of the sheet. This material combination is not limited to specific commercial models.

[0095] The upper and lower dielectric layers are selected based on the requirements of C-band electromagnetic response and processing reliability. The first dielectric layer can prioritize low loss and radiation efficiency requirements; the second dielectric layer can prioritize compact microstrip wiring, active device mounting, thermal stability, and bending strength requirements.

[0096] In a preferred embodiment, the thickness of the second dielectric layer Greater than the thickness of the first dielectric layer And the dielectric constant of the second dielectric layer The dielectric constant is greater than that of the first dielectric layer. Higher It can shorten the equivalent wavelength of the underlying microstrip line to a certain extent, and reduce the area occupied by the stubs and matching network; larger A higher modulus of elasticity can improve the overall stiffness of multilayer boards and reduce warping during assembly and welding.

[0097] To avoid thermal expansion mismatch caused by heterogeneous materials, a material system compatible with copper layers, prepregs, and surface-mount devices should be selected in the actual fabrication process, and the resonant frequency drift and mechanical deformation under temperature changes should be verified through simulation or sample testing.

[0098] In some embodiments, a patch layer is designed on the surface of the first dielectric layer, specifically including: A receiving metal patch and a transmitting metal patch are formed on the surface of the first dielectric layer as a patch layer. Both the transmitting and receiving metal patches are H-shaped multimode resonant patches.

[0099] The H-shaped patch includes a first metal arm, a second metal arm, and a third metal arm connecting the first and second metal arms. The main parameters of the H-shaped patch include the lengths of the first and second metal arms. Width of the first metal arm and the second metal arm The length of the third metal arm Width of the third metal arm The arm spacing between the first metal arm and the second metal arm Feed point offset and optional tuning gap .

[0100] The initial dimensions of the H-shaped patch can be estimated based on the equivalent resonant length:

[0101] In the formula: The speed of light in a vacuum. For the target center frequency, is the equivalent dielectric constant of the layer where the patch is located. Subsequently, the arm length, beam position, and feed point of the H-shaped patch were optimized through full-wave simulation to enable it to form a main resonant mode and an auxiliary resonant mode near the target frequency band.

[0102] Unlike a single rectangular patch, the current in an H-shaped patch can be distributed along the two vertical arms and the central crossbeam. By placing controllable switches or loading elements at the ends of the vertical arms, in the middle of the crossbeam, or in the vicinity of the feed area, the equivalent current path and local resonance intensity can be changed, thereby providing greater tuning freedom for the subsequent support compensation network.

[0103] In some embodiments, the design of the spur compensation network, the design of the active gain compensation and port matching, and the bias control network are respectively performed.

[0104] In some examples, the branch compensation network design is as follows: A spur compensation network 31 is designed in the active circuit layer 3. The spur compensation network 31 includes at least one phase compensation spur and one frequency calibration spur. The phase compensation spur is used to change the transmission phase; the frequency calibration spur is used to adjust the center frequency offset caused by changes in switch state, H-type patch mode switching, or changes in the port impedance of active devices.

[0105] The stubs can be open-circuit microstrip stubs, short-circuit microstrip stubs, T-shaped stubs, radial stubs, folded stubs, or composite stubs with lumped capacitance / inductance. In the same state, the connection or disconnection of the stubs can be controlled by switching devices; in different states, stubs of different lengths, shapes, or loading parameters can be selected. Unlike traditional delay lines that directly rely on the difference in length between two transmission paths, this invention achieves phase compensation by changing the local susceptance and network equivalent impedance through stubs, thus allowing simultaneous control of phase and frequency within a smaller footprint.

[0106] During the design process, the support parameters can be... , , , Connection position between the branch and the main transmission line and switch equivalent The parameters are used as optimization variables. The optimization objective is to optimize multiple states in... The preset phase step is satisfied, and the center frequency of each state is made to be such that... As close as possible ,Right now Less than the preset threshold.

[0107] In one specific embodiment, the stub compensation network includes short stubs connected near the same node of the main transmission line. Hechang Branch Both the short and long stubs have open-circuit terminals. The short stub is connected to the main transmission line via a first controllable switch D4, and the long stub is connected to the main transmission line via a second controllable switch D3. When D4 is on and D3 is off, the short stub is connected to the main transmission line, forming the first phase state; when D4 is off and D3 is on, the long stub is connected to the main transmission line, forming the second phase state. By adjusting the lengths of the short and long stubs, the stub connection positions, and the equivalent parameters of the switches, the first and second phase states are synchronized at the target frequency. A preset phase difference is generated, for example, a phase difference of about 90°.

[0108] The branch control logic of a four-state embodiment can be set as shown in Table 1 below. The actual number of states and branch combinations can be expanded according to design needs.

[0109] Table 1: Four-State Branch Control Logic

[0110] In some examples, active gain compensation and port matching designs are specifically as follows: An active gain compensation module is placed in the RF transmission path between the H-pattern and the output coupling structure. This module can be a low-noise amplifier, a power amplifier, a variable gain amplifier, or its equivalent two-port network. To avoid multi-state response mismatch directly caused by active devices, the amplifier input / output impedance, the stub compensation network, and the equivalent impedance of the H-pattern should all be considered during the design.

[0111] In field-circuit co-simulation, the active device positions are first set as input and output ports in the 3D model, and the electromagnetic parameters of H-shaped patches, vias, stub networks, and matching lines are extracted. Then, the active gain module is imported into the circuit co-simulation environment. Parameters or equivalent models are used to jointly observe the amplitude, phase, input matching, output matching, and stability under multiple states.

[0112] The overall link gain can be expressed as:

[0113] In the formula: For active module gain, For switching losses, To reduce network losses, For via transmission loss, For dielectric and conductor losses, This represents the mismatch loss. The optimization objective is to make... The gain should be greater than a preset threshold near the target frequency, and the gain difference between different states should be less than the allowable range.

[0114] S102. Based on the simulation model, perform multi-objective joint optimization on the parameters of the patch layer, the support compensation network and the heterogeneous stacked structure to obtain the design parameters of the metasurface unit, so that multiple reconfigurable states meet the preset phase spacing, amplitude consistency and center frequency consistency requirements at the target frequency.

[0115] In full-wave electromagnetic simulation and circuit co-simulation, the parameters of the H-shaped patch, the parameters of the support network, the parameters of the distribution network, and the material thickness are used as optimization variables.

[0116] The parameters of the H-shaped patch include: The lengths of the first and second metal arms, the widths of the first and second metal arms, the length of the third metal arm, the width of the third metal arm, the arm spacing between the first and second metal arms, the feed point or coupling connection position, the tuning gap size, and the loading position of the switching device.

[0117] The parameters of the branch compensation network include: The length of the short branch, the length of the long branch, the branch width, the connection position of the branch to the main transmission line, the width of the main transmission line, the equivalent on-resistance of the first controllable switch device D4 and the second controllable switch device D3, the turn-off capacitance, the parasitic inductance, and the position of the open end of the branch.

[0118] The matching network parameters include: The parameters of the microstrip line length, microstrip line width, stepped impedance segment size, open-circuit matching branch length, short-circuit matching branch length, series capacitor, parallel capacitor, series inductor, parallel inductor, DC blocking capacitor, and stabilizing damping network in the input matching branch and output matching branch.

[0119] The material parameters include: The relative permittivity, loss tangent, thermal stability parameters, and mechanical strength parameters of the first dielectric layer 21 and the second dielectric layer 23.

[0120] The optimization objective can be set as follows: Objective 1: Multiple reconfigurable states at the target frequency It has a preset phase interval; Objective 2: Center frequency of each state and The deviation is minimal; Objective 3: The difference in amplitude response between different states is less than a preset threshold; Objective 4: The active gain compensation module remains stable within the operating frequency band and has sufficient gain margin; Objective 5: The heterogeneous laminated structure meets the requirements for processing thickness, device welding, thermal stability and mechanical strength.

[0121] Specifically, the following objective function can be used for joint optimization:

[0122] In the formula, to These are the weighting coefficients; For adjacent reconfigurable states at the target frequency Phase difference at; For target phase stepping; For the first The center frequency of a reconfigurable state; The target operating frequency; For the first A reconfigurable state at the target frequency The amplitude response at that point; It is the average value of the magnitude response of multiple reconfigurable states; and These represent the matching status of the input port and the output port, respectively. This indicates the stability metrics of the active gain compensation module. This section represents the process constraints corresponding to machining dimensions, component soldering, via spacing, trace spacing, and material thickness limitations. This indicates a penalty term introduced when port matching, active stability, or process constraints do not meet preset conditions.

[0123] The calculation process of the above objective function includes: The first step is to perform full-wave electromagnetic simulation or field-path co-simulation in each reconfigurable state to obtain scattering parameters, transmission phase, amplitude response and port matching results in the target frequency band. The second step involves extracting the transmission phase φn and amplitude response An for each state at the target frequency f0, performing continuous phase processing, and calculating the phase difference Δφn = φn + 1 between adjacent states. φn; The third step is to compare Δφn with the target phase step Δφtarget to obtain the phase interval error Σ|Δφn. Δφtarget|; Then, extract the center frequency point fn from the frequency response curve of each state, and calculate the offset Σ|fn of the center frequency point of each state relative to the target frequency f0. f0|; The fourth step is to calculate the average amplitude Aavg of multiple states at the target frequency f0, and obtain the amplitude consistency error Σ|An Aavg|; The fifth step involves calculating the penalty terms Penalty(S11,S22,Stability) and Penalty(Process) based on input port reflection, output port reflection, active stability, and process constraints. These are then weighted and summed according to weight coefficients w1 to w5 to obtain the overall evaluation function F. By comparing the F values ​​under different parameter combinations, the structural parameter combination that results in a smaller F value while satisfying the preset constraints is selected as the optimization result.

[0124] The specific optimization process is as follows: The first step is to establish an initial co-simulation model of the metasurface unit based on the target operating frequency f0, the unit period, the material parameters of the first dielectric layer 21 and the second dielectric layer 23, the structure of the ground isolation layer 22, the equivalent model of the controllable switching device, and the S-parameters or equivalent two-port model of the active gain compensation module 32.

[0125] The second step is to perform initial optimization on the H-shaped multimode resonant patch to enable it to form a main resonant mode and an auxiliary resonant mode near the target frequency f0, and to make the equivalent input impedance at the feed point or coupling connection position close to the impedance required by the bottom microstrip circuit.

[0126] The third step is to perform state-related optimization on the spur compensation network 31, and to calculate the phase, amplitude and center frequency of the short spur Ls access state, the long spur Ll access state and the optional extension state respectively, so that different states form a preset phase difference near the target frequency f0 and reduce the center frequency drift.

[0127] The fourth step involves introducing an active gain compensation module 32, an input matching branch, and an output matching branch to jointly optimize port matching, transmission gain, and stability, ensuring that the amplitude response differences under various states are within acceptable limits. Subsequently, a bias control network 33 is introduced to check the disturbances of the RF choke structure, DC blocking structure, bias traces, and filter structure to the amplitude and phase response at the target frequency. The influence of the bias network is reduced by adjusting the position of the bias traces, choke structure parameters, DC blocking capacitor parameters, and the position of the grounding vias.

[0128] The fifth step involves joint iterative optimization of the H-shaped multimode resonant patch, the spur compensation network 31, the active gain compensation module 32, the bias control network 33, the RF metallization via, and the heterogeneous stacked structure 2, until multiple reconfigurable states simultaneously meet the preset requirements for phase spacing, amplitude consistency, center frequency consistency, port matching, active stability, and fabrication reliability.

[0129] The optimization method adopted is: a hierarchical parameter scanning and multi-objective joint optimization method for field-path coordination.

[0130] Specifically, the electromagnetic responses of the H-shaped multimode resonant patch, RF metallized vias, spur compensation network 31, and heterogeneous stacked structure 2 are first obtained through full-wave electromagnetic simulation. Then, in the circuit co-simulation environment, equivalent models of controllable switching devices, S-parameter models or equivalent two-port models of active gain compensation modules 32, and equivalent circuit models of bias control networks 33 are introduced. Subsequently, a combination of parameter scanning, sensitivity analysis, local iterative optimization, and multi-objective evaluation functions is used to optimize and jointly correct the parameters of each structure step by step. The optimization method is not limited to specific numerical algorithms; in some examples, genetic algorithms, particle swarm optimization algorithms, response surface optimization algorithms, Bayesian optimization algorithms, or other multi-objective optimization algorithms can also be used to search for the above parameters.

[0131] S103. Arrange the optimized metasurface units in an array to obtain a reconfigurable metasurface.

[0132] In some examples, in step S103, the optimized metasurface units are arranged in a one-dimensional or two-dimensional array.

[0133] This array can be used for applications such as fixed beam enhancement, dynamic beam scanning, multi-user coverage reconstruction, blind spot filling in obstructed areas, and indoor / outdoor hotspot coverage enhancement. The specific controller can be an FPGA, MCU, shift register, or other programmable bias control circuit, but the core of this invention is not limited to a specific controller type.

[0134] Figure 8 A field-road cooperative simulation model diagram provided for an embodiment of this application. See also... Figure 8 The middle module is a three-dimensional full-wave electromagnetic simulation model of metasurface elements; the two sides are two-port network modules used to represent the equivalent circuit model or S-parameter model of the active gain compensation module. This two-port network can be a low-noise amplifier, power amplifier, variable gain amplifier, or other equivalent active two-port network. By connecting the output port of the three-dimensional full-wave electromagnetic model to the input port of the active two-port network, and connecting the output port of the active two-port network to the subsequent output coupling structure, the effects of patch structures, via interconnects, stub compensation networks, active devices, and matching networks on the overall amplitude and phase response can be considered simultaneously in the same simulation environment.

[0135] The purpose of this application is to demonstrate that it does not merely perform isolated simulations of H-patterns or active amplifiers, but rather employs a combination of full-wave electromagnetic simulation and circuit co-simulation to establish a complete link model encompassing "pattern-via-stub compensation network-active gain compensation module-output port". Through this field-circuit co-simulation model, the transmission phase, reflection phase, transmission gain, input matching, output matching, and center frequency offset under different reconfigurable states can be observed, thus providing a basis for the joint optimization of H-pattern parameters, stub network parameters, via positions, matching network parameters, and active module parameters.

[0136] Figure 9 The reflection phase response curves for four reconfigurable states provided in one embodiment of this application are shown. Figure 9 As shown, the horizontal axis represents frequency, the vertical axis represents reflection phase, and the four curves correspond to the four reconfigurable coding states: 00, 01, 10, and 11. Figure 9 It can be seen that the reflection phase of the four states exhibits different phase response trajectories as the frequency changes, indicating that by switching the state of the stub compensation network and the corresponding equivalent reactance / susceptance state, the metasurface unit can obtain different phase responses in the target frequency band.

[0137] At the target frequency of 6.9 GHz, the reflection phases corresponding to the four states are approximately: -56.46° for state 00, -154.80° for state 01, 118.55° for state 10, and 34.36° for state 11. Considering the 360° periodicity of the phase, the phase intervals between adjacent states can be converted to approximately 98.34°, 86.65°, 84.19°, and 90.82°, respectively. Therefore, the four states can form a phase step of approximately 90° near 6.9 GHz, satisfying the basic requirements of a two-bit reconfigurable metasurface for discrete phase encoding.

[0138] It should be noted that, in Figure 9 The middle section of the curve shows abrupt changes near +180° and -180°. This phenomenon is a phase wrapping phenomenon in phase display and does not indicate a discontinuity in the actual physical phase. In actual analysis, the phase curve can be expanded to obtain a continuous phase response.

[0139] The simulation results demonstrate that, through the synergistic effect of the H-shaped multimode resonant patch and the spur compensation network, multiple distinguishable phase states can be formed near the target frequency, and the phase difference between adjacent states can be made close to the preset phase step. This result can be used to support the technical effects of "multi-state phase response," "preset phase interval," and "two-bit reconfigurable state" in this application.

[0140] Figure 10The S-parameter response curve of an active gain compensation module provided in one embodiment of this application is shown. Figure 10 As shown, the horizontal axis represents frequency, and the vertical axis represents amplitude response. The curves represent the input reflection coefficient S11, forward transmission coefficient S21, and reverse transmission coefficient S12, respectively. This figure is used to characterize the input port matching, forward gain, and reverse isolation performance of the active gain compensation module near the target frequency band.

[0141] At the target frequency of 6.9 GHz, S11 is approximately -27.39 dB, indicating that the input reflection of the active gain compensation module is small and the input port matching is good. Generally, an S11 less than -10 dB is considered to indicate good input matching performance. The fact that S11 at 6.9 GHz is significantly lower than -10 dB in the figure shows that the RF signal can effectively enter the active gain compensation module, resulting in low input reflection loss.

[0142] At the target frequency of 6.9 GHz, S21 is approximately 14.82 dB, indicating that the active gain compensation module has a significant positive transmission gain near the target frequency. This gain can be used to compensate for H-pattern coupling loss, stub compensation network loss, switching device insertion loss, RF via loss, dielectric loss, and microstrip conductor loss, thereby improving the effective output amplitude of the metasurface unit. This result supports the technical effect of "active gain compensation module for amplitude compensation of RF signals" in this application.

[0143] At the target frequency of 6.9 GHz, S12 is approximately -23.71 dB, indicating that the active gain compensation module has weak reverse transmission and a certain degree of reverse isolation capability. The lower S12 helps reduce the impact of reverse coupling of the output signal to the input, thereby reducing the disturbance of output load changes to the preceding stub compensation network and the H-shaped patch. This result demonstrates that the active gain compensation module not only provides positive gain but also improves the directivity and operational stability of the active link to a certain extent.

[0144] comprehensive Figures 8 to 10 As can be seen, this application establishes a complete metasurface unit link model through field-path co-simulation, and verifies the phase response of multiple reconfigurable states and the amplitude response of the active gain compensation module under this model. Simulation results show that the metasurface unit can form a multi-state phase response with a phase step of nearly 90° near 6.9 GHz, while the active gain compensation module can provide approximately 14.82 dB of positive gain, good input matching, and a certain degree of reverse isolation capability. Therefore, the collaborative design between the H-shaped multimode resonant patch, the stub compensation network, and the active gain compensation module can improve the multi-state amplitude-phase consistency and provide a foundation for the array expansion and beamforming of active reconfigurable metasurfaces.

[0145] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A heterogeneous stacked segmented compensating reconfigurable metasurface, characterized in that, include: A plurality of arrayed metasurface units, each metasurface unit comprising a stacked patch layer, a heterogeneous stacked structure and an active circuit layer; the patch layer comprising an emitting metal patch and a receiving metal patch; The active circuit layer includes a stub compensation network, an active gain compensation module, and a bias control network; the input terminal of the active gain compensation module is connected to the receiving metal patch, and the output terminal of the bias control module is connected to the transmitting metal patch. The stub compensation network is used to adjust the equivalent reactance, transmission phase, and center frequency offset under different reconfigurable states; the active gain compensation module is used to perform amplitude compensation on the RF signal received from the metal patch; and the bias control network is used to provide DC bias for the controllable devices in the stub compensation network and the active gain compensation module.

2. The heterogeneous stacked segmented compensated reconfigurable metasurface according to claim 1, characterized in that, The spur compensation network includes at least one phase compensation spur, which is selectively connected to the main transmission line used to transmit the radio frequency signal of the metal patch through a controllable switching device, thereby adjusting the transmission phase of the radio frequency signal.

3. The heterogeneous stacked segmented compensated reconfigurable metasurface according to claim 1, characterized in that, The phase compensation stub is one or more of the following: open circuit stub, short circuit stub, T-shaped stub, cross stub, radial stub, folded stub, or composite stub with lumped capacitance / inductance.

4. The heterogeneous stacked segmented compensated reconfigurable metasurface according to claim 1, characterized in that, The spur compensation network is disposed between the receiving metal patch and the active gain compensation module; or, the spur compensation network is disposed between the transmitting metal patch and the active gain compensation module.

5. The heterogeneous stacked segmented compensated reconfigurable metasurface according to claim 1, characterized in that, The heterogeneous laminated structure includes a first dielectric layer, a ground isolation layer, and a second dielectric layer, wherein the first dielectric layer and the second dielectric layer are configured with at least one of different dielectric materials, different dielectric constants, different thicknesses, different loss tangents, or different mechanical strengths.

6. The heterogeneous stacked segmented compensated reconfigurable metasurface according to claim 1, characterized in that, The transmitting metal patch and the receiving metal patch are H-shaped multimode resonant patches, and the transmitting metal patch and the receiving metal patch are arranged perpendicularly on a plane.

7. A design method for a heterogeneous stacked segmented compensated reconfigurable metasurface, characterized in that, include: Establish a simulation model of the metasurface unit; Based on the simulation model, the parameters of the patch layer, the support compensation network, and the heterogeneous stacked structure are jointly optimized by multiple objectives to obtain the design parameters of the metasurface unit, so that multiple reconfigurable states meet the preset phase spacing, amplitude consistency, and center frequency consistency requirements at the target frequency.

8. The design method for heterogeneous stacked segmented compensated reconfigurable metasurfaces according to claim 7, characterized in that, The steps for establishing a simulation model of a metasurface element include: A three-dimensional electromagnetic model of the patch layer, heterogeneous stacked structure, and support compensation network is established, and the equivalent circuit model of the active gain compensation module and bias control network is introduced to obtain the simulation model of the metasurface unit.

9. The design method for heterogeneous stacked segmented compensated reconfigurable metasurfaces according to claim 7, characterized in that, The objective function used in the multi-objective joint optimization process is: In the formula: In the formula, to These are the weighting coefficients; For adjacent reconfigurable states at the target frequency Phase difference at; For target phase stepping; For the first The center frequency of a reconfigurable state; The target operating frequency; For the first A reconfigurable state at the target frequency The amplitude response at that point; It is the average value of the magnitude response of multiple reconfigurable states; and These represent the matching status of the input port and the output port, respectively. This indicates the stability metrics of the active gain compensation module. This section represents the process constraints corresponding to machining dimensions, component soldering, via spacing, trace spacing, and material thickness limitations. This indicates a penalty term introduced when port matching, active stability, or process constraints do not meet preset conditions.

10. The design method for heterogeneous stacked segmented compensated reconfigurable metasurfaces according to claim 7, characterized in that, The optimization methods used in the multi-objective joint optimization process include genetic algorithms, particle swarm optimization, response surface optimization, and Bayesian optimization.

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