Semiconductor devices and their manufacturing methods

Abstract

This disclosure relates to semiconductor devices and methods of manufacturing the same. A semiconductor device is provided. The semiconductor device includes a substrate, a source electrode on the substrate, a drain electrode on the substrate, a gate electrode between the source electrode and the drain electrode, and a multilayer gate field plate (GAFP). The GAFP includes a bottom layer having a sidewall adjacent to the drain electrode. The entire bottom section of the sidewall extends at an angle between about 50 degrees and about 130 degrees relative to the surface of the substrate. The bottom section of the sidewall spans at least about 25% of the vertical extent of the bottom layer.

Description

Technical Field

[0001] This disclosure relates to semiconductor devices and methods for manufacturing the same. Background Technology

[0002] Semiconductor devices are used in a variety of electronic devices, such as mobile phones, laptops, desktops, tablets, watches, gaming systems, and various other industrial, commercial, and consumer electronics. A semiconductor device typically consists of a semiconductor portion and wiring portions formed within the semiconductor portion. Summary of the Invention

[0003] According to one embodiment of this disclosure, a method for forming a semiconductor device is provided, comprising: forming an electrode layer over a first dielectric layer; performing a first etching operation to pattern the electrode layer and form: a gate electrode; a gate field plate (GAFP); a residual electrode layer adjacent to the GAFP and overlying the first dielectric layer; a first byproduct on the GAFP; and a second byproduct on the residual electrode layer; performing a second etching operation to remove the second byproduct from the residual electrode layer and remove a first portion of the first byproduct, wherein a second portion of the first byproduct remains on the GAFP after the second etching operation; and performing a third etching operation to remove the residual electrode layer.

[0004] According to one embodiment of this disclosure, a semiconductor device is provided, comprising: a substrate; a source electrode on the substrate; a drain electrode on the substrate; a gate electrode between the source electrode and the drain electrode; and a multilayer gate field plate (GAFP) including a bottom layer having a sidewall adjacent to the drain electrode, wherein a bottom section of the sidewall extends at an angle between about 50 degrees and about 130 degrees relative to the surface of the substrate, wherein the bottom section of the sidewall spans at least about 25% of the vertical extent of the bottom layer.

[0005] According to one embodiment of this disclosure, a method for forming a semiconductor device is provided, comprising: performing a first etching operation to pattern an electrode layer over a first dielectric layer and forming: a gate electrode; a gate field plate (GAFP); a residual electrode layer adjacent to the GAFP and overlying the first dielectric layer; a first byproduct on a sidewall of the GAFP; and a second byproduct on a surface of the residual electrode layer; performing a second etching operation to remove the second byproduct from the surface of the residual electrode layer and remove a first portion of the first byproduct, wherein a second portion of the first byproduct remains on the sidewall of the GAFP after the second etching operation; and performing a third etching operation to remove the residual electrode layer. Attached Figure Description

[0006] The various aspects of this disclosure can be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various features may be arbitrarily enlarged or reduced.

[0007] Figure 1 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0008] Figure 2 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0009] Figure 3 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0010] Figure 4 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0011] Figure 5 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0012] Figure 6A A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0013] Figure 6B A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0014] Figure 7 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0015] Figure 8 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0016] Figure 9 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0017] Figure 10 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0018] Figure 11 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0019] Figure 12A A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0020] Figure 12B A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0021] Figure 12C A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0022] Figure 12D A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0023] Figure 12E A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0024] Figure 12F A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0025] Figure 12G A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0026] Figure 13 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0027] Figure 14A A cross-sectional view of a gate field plate (GAFP) of a semiconductor device according to some embodiments is shown.

[0028] Figure 14B A cross-sectional view of a GAFP semiconductor device according to some embodiments is shown.

[0029] Figure 14C A cross-sectional view of a GAFP semiconductor device according to some embodiments is shown.

[0030] Figure 14D A cross-sectional view of a GAFP semiconductor device according to some embodiments is shown.

[0031] Figure 14E A cross-sectional view of a GAFP semiconductor device according to some embodiments is shown.

[0032] Figure 14F A cross-sectional view of a GAFP semiconductor device according to some embodiments is shown.

[0033] Figure 15 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0034] Figure 16 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0035] Figure 17 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0036] Figure 18 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0037] Figure 19 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0038] Figure 20 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0039] Figure 21 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0040] Figure 22 A cross-sectional view of a semiconductor device in the manufacturing stage is shown according to some embodiments.

[0041] Figure 23 An electrode arrangement associated with a semiconductor device is shown according to some embodiments. Detailed Implementation

[0042] The following disclosure provides several different embodiments or examples for implementing various features of the provided subject matter. To simplify this disclosure, specific examples of components and arrangements are described below. These are, of course, merely examples and not limiting. For example, in the following description, forming a first feature on or over a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature may be formed between the first and second features such that the first and second features may not be in direct contact. Furthermore, this disclosure may repeat reference numerals or letters in various examples. Such repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments or configurations discussed.

[0043] Furthermore, for ease of description, this document uses spatially relevant terms such as “below,” “under,” “down,” “above,” and “up” to describe the relationship of an element or feature as shown in the figure to other elements or features(s). In addition to the orientations shown in the figure, these spatially relevant terms are also intended to encompass different orientations of the device during use or operation. The device may be oriented in other directions (rotated 90 degrees or in other orientations), and the spatially relevant descriptors used herein can be interpreted similarly accordingly.

[0044] The term "overlapping" or similar terms can be used to describe an element or feature that coincides vertically with another element or feature and is at a higher height than the other element or feature. For example, if a first element is at a higher height than a second element and at least a portion of the first element coincides vertically with at least a portion of the second element, then the first element overlaps the second element.

[0045] The term "below" or similar terms can be used to describe an element or feature that coincides vertically with another element or feature and is at a lower height than the other element or feature. For example, if a first element is at a lower height than a second element and at least a portion of the first element coincides vertically with at least a portion of the second element, then the first element is below the second element.

[0046] The term "above" can be used to describe an element or feature that is at a higher height than another element or feature. For example, if the first element is at a higher height than the second element, then the first element is above the second element.

[0047] The term "below" can be used to describe an element or feature that is at a lower height than another element or feature. For example, if the first element is at a lower height than the second element, then the first element is below the second element.

[0048] In some embodiments, a semiconductor device is provided. The semiconductor device includes a substrate, a source electrode on the substrate, a drain electrode on the substrate, a gate electrode between the source and drain electrodes, and a gate field plate (GAFP) including a bottom layer having a sidewall adjacent to the drain electrode. According to some embodiments, the entire bottom section of the sidewall extends at an angle between about 50 degrees and about 130 degrees relative to the surface of the substrate. In some embodiments, the bottom section of the sidewall has no pin defects. At least one of the following provides at least one benefit: improved modulation or increased stability of the electric field in the semiconductor device (such as the electric field in the region between the GAFP and the drain electrode), enhanced breakdown voltage of the semiconductor device, improved reliability of the semiconductor device, increased chip probe (CP) yield, reduced failure rate, or other benefits.

[0049] Figures 1 to 22 Semiconductor devices 100 at various manufacturing stages according to some embodiments are shown. Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6A , Figure 6B , Figure 7 , Figure 8 , Figure 9 , Figure 10 , Figure 11 , Figure 12A , Figure 12B , Figure 12C , Figure 12D , Figure 12E , Figure 12F , Figure 12G , Figure 13 , Figure 14A , Figure 14B , Figure 14C , Figure 14D , Figure 14E , Figure 14F , Figure 15 , Figure 16 , Figure 17 , Figure 18 , Figure 19 , Figure 20 , Figure 21 and Figure 22 A cross-sectional view of a semiconductor device 100 is shown. In some embodiments, the semiconductor device 100 includes a power device, such as a power transistor. The power device includes a gallium nitride-based power device. The semiconductor device 100 (e.g., a power device) includes at least one of a field-effect transistor, a high electron mobility transistor (HEMT), a metal-oxide-semiconductor field-effect transistor (MOSFET), or other suitable devices. Other structures and / or configurations of the semiconductor device 100 are within the scope of this disclosure.

[0050] Figure 1 A semiconductor device 100 according to some embodiments is illustrated. In some embodiments, the semiconductor device 100 includes at least one of the following: a semiconductor substrate 102, a buffer layer 104 over the semiconductor substrate 102, a body layer 106 over the buffer layer 104, a channel layer 108 over the body layer 106, a barrier layer 110 over the channel layer 108, a source electrode 112 over the barrier layer 110, a drain electrode 114 over the barrier layer 110, a feature 120 over the barrier layer 110, a first barrier structure 118, a second barrier structure 122, or a dielectric layer over at least one of the source electrode 112, the drain electrode 114, a field plate 116, the first barrier structure 118, or the barrier layer 110. In some embodiments, the one or more dielectric layers include at least one of a first dielectric layer 128, a second dielectric layer 126 over the first dielectric layer 128, or a third dielectric layer 124 over the second dielectric layer 126.

[0051] In some embodiments, the semiconductor substrate 102 includes at least one of an epitaxial layer, a silicon-on-insulator (SOI) structure, a wafer, or a die formed from a wafer. In some embodiments, the semiconductor substrate 102 includes at least one of silicon, germanium, SiC, SiGe, GaN, or other suitable materials. The semiconductor substrate 102 includes single-crystal silicon and has <100> Crystalline silicon with crystal orientation <110> Crystalline silicon with crystal orientation <111> At least one of crystalline silicon or other suitable materials with crystal orientation. Other structures and / or configurations of the semiconductor substrate 102 are within the scope of this disclosure. In some embodiments, the semiconductor substrate 102 includes at least one region of one or more n-doped regions or one or more p-doped regions. In some embodiments, the semiconductor substrate 102 is formed by at least one of the following techniques: physical vapor deposition (PVD), sputtering, chemical vapor deposition (CVD), metal-organic CVD (MOCVD), plasma-enhanced CVD (PECVD), low-pressure CVD (LPCVD), atomic layer chemical vapor deposition (ALCVD), ultra-high vacuum CVD (UHVCVD), reduced pressure CVD (RPCVD), atomic layer deposition (ALD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), spin coating, growth, or other suitable techniques.

[0052] In some embodiments, the buffer layer 104 comprises at least one of AlN, AlGaN, GaN, or other suitable materials. In some embodiments, the buffer layer 104 is formed using at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The buffer layer 104 satisfies at least one of the following conditions: it is overlaid on the semiconductor substrate 102, in direct contact with the surface 132 of the semiconductor substrate 102, or indirectly in contact with the surface 132 of the semiconductor substrate 102. The buffer layer 104 differs from the semiconductor substrate 102, for example, by having a different material composition, such that an interface is defined between the buffer layer 104 and the semiconductor substrate 102. In some embodiments, the buffer layer 104 does not have a material composition different from that of the semiconductor substrate 102. However, an interface is defined between the buffer layer 104 and the semiconductor substrate 102 because the buffer layer 104 and the semiconductor substrate 102 are separate, distinct layers, etc. In some embodiments, the interface is defined by at least one of the following differences: discontinuity between the buffer layer 104 and the semiconductor substrate 102 (e.g., molecular discontinuity, process-induced discontinuity, etc.) and / or crystallinity, molecular structure, dopant concentration, etc. between the buffer layer 104 and the semiconductor substrate 102.

[0053] In some embodiments, body layer 106 comprises at least one of GaN, GaAs, InP, or other suitable materials. In some embodiments, body layer 106 comprises a bulk GaN layer. In some embodiments, body layer 106 comprises a dopant. In some embodiments, body layer 106 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. Body layer 106 satisfies at least one of the following conditions: it is overlying on buffer layer 104, in direct contact with the surface of buffer layer 104, or in indirect contact with the surface of buffer layer 104. Body layer 106 differs from buffer layer 104, for example, by having a different material composition, such that an interface is defined between body layer 106 and buffer layer 104. In some embodiments, body layer 106 does not have a material composition different from buffer layer 104. However, the interface is defined between the body layer 106 and the buffer layer 104 because the body layer 106 and the buffer layer 104 are separate, distinct layers, etc. In some embodiments, the interface is defined by a discontinuity between the body layer 106 and the buffer layer 104 (e.g., molecular discontinuity, process-induced discontinuity, etc.) and / or a difference in at least one of the following: crystallinity, molecular structure, dopant concentration, etc., between the body layer 106 and the buffer layer 104.

[0054] In some embodiments, the channel layer 108 comprises at least one of GaN (e.g., undoped GaN), GaAs, InP, or other suitable materials. In some embodiments, the channel layer 108 is undoped. In some embodiments, the channel layer 108 comprises an undoped GaN layer. In some embodiments, the channel layer 108 comprises a channel region of a power device. In some embodiments, the dopant concentration of the channel layer 108 is less than the dopant concentration of the body layer 106. In some embodiments, the channel layer 108 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The channel layer 108 satisfies at least one of the following conditions: it is overlaid on the body layer 106, in direct contact with the surface of the body layer 106, or indirectly in contact with the surface of the body layer 106. The channel layer 108 differs from the body layer 106, for example, by having a different material composition, such that an interface is defined between the channel layer 108 and the body layer 106. In some embodiments, the channel layer 108 does not have a material composition different from that of the body layer 106. However, the interface is defined between the channel layer 108 and the body layer 106 because the channel layer 108 and the body layer 106 are separate, distinct layers, etc. In some embodiments, the interface is defined by a difference in at least one of the following: discontinuity between the channel layer 108 and the body layer 106 (e.g., molecular discontinuity, process-induced discontinuity, etc.) and / or crystallinity, molecular structure, dopant concentration, etc., between the channel layer 108 and the body layer 106.

[0055] In some embodiments, the barrier layer 110 comprises at least one of AlGaN, InAlN, AlN, AlGaAs, InAlAs, InGaAs, or other suitable materials. In some embodiments, the barrier layer 110 comprises an AlGaN barrier layer. In some embodiments, the barrier layer 110 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The barrier layer 110 satisfies at least one of the following conditions: it is overlying the channel layer 108, in direct contact with the surface 134 of the channel layer 108, or indirect contact with the surface 134 of the channel layer 108. The barrier layer 110 differs from the channel layer 108, for example, by having a different material composition, such that an interface is defined between the barrier layer 110 and the channel layer 108. In some embodiments, the barrier layer 110 does not have a material composition different from that of the channel layer 108. However, the interface is defined between the barrier layer 110 and the channel layer 108 because the barrier layer 110 and the channel layer 108 are separate, distinct layers, etc. In some embodiments, the interface is defined by a difference in at least one of the following: discontinuity between the barrier layer 110 and the channel layer 108 (e.g., molecular discontinuity, process-induced discontinuity, etc.) and / or crystallinity, molecular structure, dopant concentration, etc., between the barrier layer 110 and the channel layer 108.

[0056] In some embodiments, the semiconductor device 100 includes an electronic layer (not shown) between a channel layer 108 and a barrier layer 110. In some embodiments, the electronic layer includes a two-dimensional electron gas (2DEG) layer. In some embodiments, the electronic layer is formed by charge accumulation at an interface between a surface 134 (e.g., the top surface) of the channel layer 108 and a surface 136 (e.g., the bottom surface) of the barrier layer 110. In some embodiments, the charge accumulation is at least in part due to a polarization difference between the channel layer 108 and the barrier layer 110. In some embodiments, the electronic layer provides high mobility conduction along a plane between the channel layer 108 and the barrier layer 110. In some embodiments, this plane is parallel to the surface 134 of the channel layer 108, the surface 136 of the barrier layer 110, the surface 132 of the semiconductor substrate 102, or the x-axis (e.g., the x-axis). Figure 1-23 At least one of (as shown).

[0057] In some embodiments, the source electrode 112 comprises at least one of Ti, TiN, TaN, Al, Cu, AlCu, NiSi, CoSi, Mo, W, Co, Zr, Pt, Au, or other suitable materials. In some embodiments, the source electrode 112 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The source electrode 112 satisfies at least one of the following conditions: it is coated on the barrier layer 110, in direct contact with the surface of the barrier layer 110, or indirect contact with the surface of the barrier layer 110.

[0058] In some embodiments, the drain electrode 114 comprises at least one of Ti, TiN, TaN, Al, Cu, AlCu, NiSi, CoSi, Mo, W, Co, Zr, Pt, Au, or other suitable materials. In some embodiments, the drain electrode 114 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The drain electrode 114 satisfies at least one of the following conditions: it is coated on the barrier layer 110, in direct contact with the surface of the barrier layer 110, or indirect contact with the surface of the barrier layer 110.

[0059] In some embodiments, feature 120 includes at least one of GaN, GaAs, InP, or other suitable features. In some embodiments, feature 120 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. Feature 120 includes a p-type dopant, and feature 120 is a p-type feature, such as a p-type GaN structure. Other configurations of feature 120 (e.g., n-type features or other types of features) are within the scope of this disclosure. Feature 120 satisfies at least one of the following conditions: it is overlaid on barrier layer 110, in direct contact with the surface of barrier layer 110, or indirect contact with the surface of barrier layer 110.

[0060] In some embodiments, the field plate 116 comprises at least one of TiN, Al, Ni, Au, Cu, Pt, or other suitable materials. In some embodiments, the field plate 116 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The field plate 116 satisfies at least one of the following conditions: it is overlaid on the second dielectric layer 126, in direct contact with the surface of the second dielectric layer 126, or in indirect contact with the surface of the second dielectric layer 126.

[0061] In some embodiments, the first barrier structure 118 comprises at least one of AlGaN, InAlN, AlN, AlGaAs, InAlAs, InGaAs, or other suitable materials. In some embodiments, the first barrier structure 118 comprises a first AlGaN-2 barrier structure. In some embodiments, the first barrier structure 118 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The first barrier structure 118 satisfies at least one of the following conditions: it is overlying the barrier layer 110, in direct contact with the surface of the barrier layer 110, or indirect contact with the surface of the barrier layer 110.

[0062] In some embodiments, the second barrier structure 122 comprises at least one of AlGaN, InAlN, AlN, AlGaAs, InAlAs, InGaAs, or other suitable materials. In some embodiments, the second barrier structure 122 comprises a second AlGaN-2 barrier structure. In some embodiments, the first barrier structure 122 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The second barrier structure 122 satisfies at least one of the following conditions: it is overlying the barrier layer 110, in direct contact with the surface of the barrier layer 110, or indirect contact with the surface of the barrier layer 110.

[0063] The first dielectric layer 128 comprises silicon nitride. Other materials for the first dielectric layer 128 (e.g., dielectric materials) are within the scope of this disclosure. In some embodiments, the first dielectric layer 128 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The first dielectric layer 128 satisfies at least one of the following conditions: it is overlying the source electrode 112, in direct contact with the surface of the source electrode 112, or indirectly in contact with the surface of the source electrode 112. The first dielectric layer 128 satisfies at least one of the following conditions: it is overlying the drain electrode 114, in direct contact with the surface of the drain electrode 114, or indirectly in contact with the surface of the drain electrode 114. The first dielectric layer 128 satisfies at least one of the following conditions: it is overlying the first barrier structure 118, in direct contact with the surface of the first barrier structure 118, or indirectly in contact with the surface of the first barrier structure 118. The first dielectric layer 128 satisfies at least one of the following conditions: it covers the second barrier structure 122 and is in direct contact with the surface of the second barrier structure 122, or is in indirect contact with the surface of the second barrier structure 122.

[0064] In some embodiments, the second dielectric layer 126 comprises a low-k dielectric material. As used herein, the term "low-k dielectric material" refers to a material with a dielectric constant k less than about 3.9. In some embodiments, the second dielectric layer 126 comprises at least one of SiO2, SiON, SiOC, SiOCN, or other suitable materials. In some embodiments, the second dielectric layer 126 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The second dielectric layer 126 satisfies at least one of the following conditions: it is overlying the first dielectric layer 128, in direct contact with the surface of the first dielectric layer 128, or indirectly in contact with the surface of the first dielectric layer 128. The second dielectric layer 126 satisfies at least one of the following conditions: it is overlying the barrier layer 110, in direct contact with the surface of the barrier layer 110, or indirectly in contact with the surface of the barrier layer 110. The second dielectric layer 126 satisfies at least one of the following conditions: it is overlying on feature 120, in direct contact with the surface of feature 120, or in indirect contact with the surface of feature 120.

[0065] In some embodiments, the third dielectric layer 124 comprises silicon nitride. Other materials for the third dielectric layer 124 (e.g., dielectric materials) are within the scope of this disclosure. In some embodiments, the third dielectric layer 124 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The thickness 130 of the third dielectric layer 124 is between about 700 angstroms and about 1300 angstroms. Other values ​​for the thickness 130 are within the scope of this disclosure. The third dielectric layer 124 satisfies at least one of the following conditions: it is overlying the second dielectric layer 126, in direct contact with the surface of the second dielectric layer 126, or indirectly in contact with the surface of the second dielectric layer 126. The third dielectric layer 124 satisfies at least one of the following conditions: it is overlying the field plate 116, in direct contact with the surface of the field plate 116, or indirectly in contact with the surface of the field plate 116.

[0066] Figure 2 A first mask layer 202 formed on a third dielectric layer 124 according to some embodiments is shown. The first mask layer 202 satisfies at least one of the following conditions: it covers the third dielectric layer 124, directly contacts the surface of the third dielectric layer 124, or indirectly contacts the surface of the third dielectric layer 124. The first mask layer 202 is formed by at least one of the following techniques: PVD, sputtering, CVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques.

[0067] In some embodiments, the first mask layer 202 comprises a photoresist having a photosensitive material, wherein the properties of the first mask layer 202 (such as solubility) are affected by light. In some embodiments, the first mask layer 202 is a negative photoresist or a positive photoresist. With a negative photoresist, when irradiated by a light source, the regions of the negative photoresist become insoluble, such that during a subsequent development stage, the application of a solvent to the negative photoresist removes the unirradiated regions of the negative photoresist. Thus, the pattern formed in the negative photoresist is a negative image of the pattern defined by the opaque regions of the template (e.g., a mask) between the light source and the negative photoresist. In a positive photoresist, the irradiated regions of the positive photoresist become soluble and are removed during development via the application of a solvent. Thus, the pattern formed in the positive photoresist is a positive image of the opaque regions of the template (e.g., a mask) between the light source and the positive photoresist.

[0068] Figure 3A first patterned mask layer 302 formed by a first mask layer 202 is shown according to some embodiments. In some embodiments, the first patterned mask layer 302 defines an opening that exposes a portion of a third dielectric layer 124. Even in Figure 3 An opening in the first patterned mask layer 302 is depicted, but any number of openings in the first patterned mask layer 302 can also be envisioned.

[0069] Figure 4 A first trench 402 is shown formed in one or more dielectric layers using a first patterned mask layer 302 according to some embodiments. In some embodiments, the first trench 402 exposes the surface of feature 120. The first trench 402 extends through at least one of a third dielectric layer 124 or a second dielectric layer 126. In some embodiments, a first etching process is performed to form the first trench 402, wherein openings in the first patterned mask layer 302 allow one or more etchants applied during the first etching process to remove portions of one or more first target layers above feature 120, while the first patterned mask layer 302 protects or shields portions of one or more first target layers covered by the first patterned mask layer 302 to form the first trench 402. In some embodiments, one or more first target layers (etched by the first etching process to create the first trench 402) include at least one of a third dielectric layer 124 or a second dielectric layer 126.

[0070] In some embodiments, the first etching process includes at least one of a dry etching process (e.g., reactive ion etching (RIE) or other suitable dry etching process), a wet etching process, an anisotropic etching process, an isotropic etching process, or other suitable etching process. The first etching process uses one or more first etching chemicals, including at least one of plasma, fluorine, hydrogen fluoride (HF), diluted HF, sulfur hexafluoride (SF6), chlorine compounds such as hydrogen chloride (HCl2), hydrogen sulfide (H2S), tetrafluoromethane (CF4), or other suitable materials. In some embodiments, the one or more first etching chemicals have etching selectivity, such that the first etching process removes and / or etches away portions of one or more first target layers while removing and / or etching away little or no feature 120.

[0071] Figure 5The removal of a first patterned mask layer 302 according to some embodiments is illustrated. In some embodiments, the first patterned mask layer 302 is removed after the formation of the first trench 402. The first patterned mask layer 302 is removed by at least one of the following techniques: performing a cleaning process to wash away the first patterned mask layer 302, stripping the first patterned mask layer 302, etching away the first patterned mask layer 302, chemical mechanical planarization (CMP), or other suitable techniques.

[0072] Figure 6A A first electrode layer 602 is shown, formed over a third dielectric layer 124 and / or in a first trench 402 according to some embodiments. The first electrode layer 602 satisfies at least one of the following conditions: it is overlying the third dielectric layer 124, in direct contact with the surface of the third dielectric layer 124, or indirect contact with the surface of the third dielectric layer 124. The first electrode layer 602 also satisfies at least one of the following conditions: it is overlying the feature 120, in direct contact with the surface of the feature 120 (e.g., exposed by the first trench 402), or indirect contact with the surface of the feature 120. The first electrode layer 602 is formed by at least one of the following techniques: PVD, sputtering, CVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The first electrode layer 602 comprises at least one of TiN, Ti, TiW, TaN, TiAlN, TaAlN, HfN, or other suitable materials. The thickness 604 of the first electrode layer 602 is between about 600 angstroms and about 1800 angstroms. Other values ​​for the thickness 604 are within the scope of this disclosure.

[0073] Figure 6B A portion 606 of the first electrode layer 602 according to some embodiments is shown (in...) Figure 6AAn enlarged view (shown as a dashed outline in the image). In some embodiments, the first electrode layer 602 includes at least one of a first layer 620, a second layer 618 above the first layer 620, or a third layer 616 above the second layer 618. The first layer 620 satisfies at least one of the following conditions: it is overlying the third dielectric layer 124, in direct contact with the surface of the third dielectric layer 124, or indirect contact with the surface of the third dielectric layer 124. The first layer 620 satisfies at least one of the following conditions: it is overlying the feature 120, in direct contact with the top surface of the feature 120, or indirect contact with the top surface of the feature 120. The first layer 620 is formed by at least one of the following techniques: PVD, sputtering, CVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The first layer 620 comprises TiN. In some embodiments, the first layer 620 additionally or alternatively comprises one or more other materials, such as at least one of Ti, TiW, TaN, TiAlN, TaAlN, HfN, or other suitable materials. The thickness 614 of the first layer 620 is between about 100 angstroms and about 500 angstroms. Other values ​​for the thickness 614 are within the scope of this disclosure.

[0074] The second layer 618 satisfies at least one of the following conditions: it overlies the first layer 620, directly contacts the top surface of the first layer 620, or indirectly contacts the top surface of the first layer 620. The second layer 618 is formed by at least one of the following techniques: PVD, sputtering, CVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The second layer 618 comprises Ti. In some embodiments, the second layer 618 additionally or alternatively comprises one or more other materials, such as at least one of TiN, TiW, TaN, TiAlN, TaAlN, HfN, or other suitable materials. The thickness 612 of the second layer 618 is between about 400 angstroms and about 800 angstroms. Other values ​​for the thickness 612 are within the scope of this disclosure. In some embodiments, the thickness 612 of the second layer 618 is controlled to control the Ti concentration of the first electrode layer 602. The second layer 618 differs from the first layer 620, for example, by having a different material composition, such that an interface is defined between the second layer 618 and the first layer 620. In some embodiments, the second layer 618 does not have a material composition different from the first layer 620. However, the interface is defined between the second layer 618 and the first layer 620 because the second layer 618 and the first layer 620 are separate, distinct layers, etc. In some embodiments, the interface is defined by a discontinuity between the second layer 618 and the first layer 620 (e.g., molecular discontinuity, process-induced discontinuity, etc.) and / or a difference in at least one of the following: crystallinity, molecular structure, dopant concentration, etc., between the second layer 618 and the first layer 620. In some embodiments, an alloy is formed between the second layer 618 and the first layer 620.

[0075] The third layer 616 satisfies at least one of the following conditions: it overlies the second layer 618, directly contacts the top surface of the second layer 618, or indirectly contacts the top surface of the second layer 618. The third layer 616 is formed by at least one of the following techniques: PVD, sputtering, CVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The third layer 616 comprises TiN. In some embodiments, the third layer 616 additionally or alternatively comprises one or more other materials, such as at least one of Ti, TiW, TaN, TiAlN, TaAlN, HfN, or other suitable materials. The thickness 610 of the third layer 616 is between about 100 angstroms and about 500 angstroms. Other values ​​for the thickness 610 are within the scope of this disclosure. The third layer 616 differs from the second layer 618, for example, by having a different material composition, such that an interface is defined between the third layer 616 and the second layer 618. In some embodiments, the third layer 616 does not have a material composition different from that of the second layer 618. However, the interface is defined between the third layer 616 and the second layer 618 because the third layer 616 and the second layer 618 are separate, distinct layers, etc. In some embodiments, the interface is defined by a discontinuity between the third layer 616 and the second layer 618 (e.g., molecular discontinuity, process-induced discontinuity, etc.) and / or a difference in at least one of the following: crystallinity, molecular structure, dopant concentration, etc., between the third layer 616 and the second layer 618. In some embodiments, an alloy is formed between the third layer 616 and the second layer 618.

[0076] Figure 7 A second electrode layer 702, formed over a first electrode layer 602 according to some embodiments, is shown. The second electrode layer 702 satisfies at least one of the following conditions: it overlies the first electrode layer 602, is in direct contact with the surface of the first electrode layer 602, or is in indirect contact with the surface of the first electrode layer 602. The second electrode layer 702 is formed by at least one of the following techniques: PVD, sputtering, CVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The second electrode layer 702 comprises AlCu. In some embodiments, the second electrode layer 702 additionally or alternatively comprises one or more other materials, such as at least one of Co, Al, Cu, Mo, Ru, W, Ta, or other suitable materials. The thickness 704 of the second electrode layer 702 is between about 1,000 angstroms and about 1,500 angstroms. Other values ​​for the thickness 704 are within the scope of this disclosure.

[0077] The second electrode layer 702 differs from the first electrode layer 602, for example, by having a different material composition, such that an interface is defined between the second electrode layer 702 and the first electrode layer 602. In some embodiments, the second electrode layer 702 does not have a material composition different from the first electrode layer 602. However, the interface is defined between the second electrode layer 702 and the first electrode layer 602 because the second electrode layer 702 and the first electrode layer 602 are separate, distinct layers, etc. In some embodiments, the interface is defined by a difference in at least one of the following: discontinuity between the second electrode layer 702 and the first electrode layer 602 (e.g., molecular discontinuity, process-induced discontinuity, etc.) and / or crystallinity, molecular structure, dopant concentration, etc., between the second electrode layer 702 and the first electrode layer 602.

[0078] Figure 8 A third electrode layer 802, formed on a second electrode layer 702 according to some embodiments, is shown. The third electrode layer 802 satisfies at least one of the following conditions: it overlies the second electrode layer 702, is in direct contact with the surface of the second electrode layer 702, or is in indirect contact with the surface of the second electrode layer 702. The third electrode layer 802 is formed by at least one of the following techniques: PVD, sputtering, CVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The third electrode layer 802 comprises TiN. In some embodiments, the third electrode layer 802 additionally or alternatively comprises one or more other materials, such as at least one of Ti, TiW, SiN, SiO2, Al2O3, AlN, TaN, TiAlN, or other suitable materials. The thickness 804 of the third electrode layer 802 is between about 800 angstroms and about 1300 angstroms. Other values ​​for the thickness 804 are within the scope of this disclosure.

[0079] The third electrode layer 802 differs from the second electrode layer 702, for example, by having a different material composition, such that an interface is defined between the third electrode layer 802 and the second electrode layer 702. In some embodiments, the third electrode layer 802 does not have a material composition different from the second electrode layer 702. However, the interface is defined between the third electrode layer 802 and the second electrode layer 702 because the third electrode layer 802 and the second electrode layer 702 are separate, distinct layers, etc. In some embodiments, the interface is defined by a discontinuity between the third electrode layer 802 and the second electrode layer 702 (e.g., molecular discontinuity, process-induced discontinuity, etc.) and / or a difference in at least one of the following: crystallinity, molecular structure, dopant concentration, etc., between the third electrode layer 802 and the second electrode layer 702. In some embodiments, the third electrode layer 802 serves as an anti-reflective coating.

[0080] Figure 9A second mask layer 902, formed on a third electrode layer 802 according to some embodiments, is shown. The second mask layer 902 satisfies at least one of the following conditions: it covers the third electrode layer 802, directly contacts the top surface of the third electrode layer 802, or indirectly contacts the top surface of the third electrode layer 802. The second mask layer 902 is formed by at least one of the following techniques: PVD, sputtering, CVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. In some embodiments, the second mask layer 902 includes a photosensitive material, wherein the properties of the second mask layer 902 (such as solubility) are affected by light. In some embodiments, the second mask layer 902 is a negative photoresist or a positive photoresist.

[0081] Figure 10 A second patterned mask layer 1002 formed by a second mask layer 902 is shown according to some embodiments. Figure 11 The illustration illustrates the use of a second patterning mask layer 1002 to pattern one or more second target layers to form a gate electrode 1106 and a gate field plate (GAFP) 1108, according to some embodiments. In some embodiments, the one or more second target layers include at least one of a third electrode layer 802, a second electrode layer 702, or a first electrode layer 602. In some embodiments, a second etching process is performed to pattern the one or more second target layers, wherein the second patterning mask layer 1002 does not cover a first portion of the one or more second target layers to allow one or more etchants applied during the second etching process to remove the first portion of the one or more second target layers, while the second patterning mask layer 1002 protects or shields a second portion of the one or more second target layers covered by the second patterning mask layer 1002.

[0082] In some embodiments, the second etching process includes multiple etching operations, including at least two of the following: a first etching operation (e.g., a main etching operation), a second etching operation following the first etching operation (e.g., a polymer cleaning operation), or a third etching operation following the second etching operation. In some embodiments, some or all of the multiple etching operations include the same type of etching process, such as at least one of dry etching, wet etching, anisotropic etching, isotropic etching, or other suitable etching processes. In some embodiments, some or all of the multiple etching operations include reactive ion etching (RIE). In some embodiments, one or more etching chemicals used by the second etching process have etching selectivity, such that the second etching process removes and / or etches away portions of one or more second target layers while removing and / or etching away little or no third dielectric layer 124.

[0083] In some embodiments, while the semiconductor device 100 is in the etching chamber of an etching tool (e.g., a single etching tool, such as a RIE tool or other suitable etching tool), one, some, or all of a plurality of etching operations are performed. In some embodiments, in response to transferring the semiconductor device 100 to the etching chamber, some or all of the plurality of etching operations are performed before the semiconductor device 100 is transferred out of the etching chamber. Embodiments in which multiple etching operations are performed using different etching tools are contemplated.

[0084] In some embodiments, GAFP 1108 includes at least one of a first GAFP electrode layer 1112, a second GAFP electrode layer 1114 above the first GAFP electrode layer 1112, or a third GAFP electrode layer 1116 above the second GAFP electrode layer 1114. In some embodiments, the third GAFP electrode layer 1116 is formed by a third electrode layer 802, the second GAFP electrode layer 1114 is formed by a second electrode layer 702, or the first GAFP electrode layer 1112 is formed by a first electrode layer 602. In some embodiments, gate electrode 1106 includes at least one of a first gate electrode layer 1132, a second gate electrode layer 1134 above the first gate electrode layer 1132, or a third gate electrode layer 1136 above the second gate electrode layer 1134. In some embodiments, the third gate electrode layer 1136 is formed by the third electrode layer 802, the second gate electrode layer 1134 is formed by the second electrode layer 702, or the first gate electrode layer 1132 is formed by the first electrode layer 602.

[0085] Figures 12A to 12G This illustrates a portion 1010 of a semiconductor device 100 in one or more stages of a second etching process according to some embodiments. Figure 10 and Figure 11 An enlarged cross-sectional view (shown as a dashed outline in the image). Figure 12A A portion 1010 prior to a second etching process is shown according to some embodiments.

[0086] Figure 12B A portion 1010 following a first etch operation in a second etch process, according to some embodiments, is shown. The first etch operation includes a first RIE operation. In some embodiments, the first etch operation additionally or alternatively includes one or more other types of etch operations. In some embodiments, the first etch operation is performed using at least one of the following parameters: a first halogen-containing gas, a first carrier gas, a first RF power, a first ion bombardment direction (e.g., bombardment tilt angle) in which ions are directed to the semiconductor device 100 during the first etch operation, or a first chamber pressure corresponding to the pressure in the etch chamber (e.g., in which the semiconductor device 100 undergoes the first etch operation).

[0087] In some embodiments, the first etching operation includes applying a first RF power to the electrodes of an etching tool to generate plasma from at least one of a first halogen-containing gas or a first carrier gas in an etching chamber. In some embodiments, at least one of the first halogen-containing gas or the first carrier gas is dissociated using an electric field generated by the first RF power to generate ions of the plasma. In some embodiments, ions are accelerated toward the semiconductor device 100 in a first ion bombardment direction, for example, this is at least in part due to a bias voltage induced by the first RF power. In some embodiments, the first ion bombardment direction is influenced by at least one of the orientation of the electric field or the pressure of the first chamber. In some embodiments, the first ion bombardment direction includes direction 1230 or other suitable direction. In some embodiments, the first ion bombardment direction is perpendicular to the surface 1238 of the third dielectric layer 124 or parallel to the z-axis (e.g., Figure 1-23 At least one of the directions shown.

[0088] In some embodiments, the first halogenated gas includes at least one of HF, HCl, HBr, Cl2, SF6, CHF3, BCl3, CF4, or other suitable gases. In some embodiments, the first carrier gas includes at least one of an inert gas, N2, Ar, He-O2, or other suitable gases. The first RF power satisfies at least one of the following conditions: greater than about 300 watts, or greater than about 900 watts. Other values ​​of the first RF power are within the scope of this disclosure. In some embodiments, the first RF power is controlled to control at least one of the ion dissociation rate, ion bombardment intensity, or etch rate of the first etch operation. In some embodiments, an increase in the first RF power results in an increase in at least one of the ion dissociation rate, ion bombardment intensity, or etch rate of the first etch operation. The first chamber pressure is between about 100 millitors (mmTorr) and about 300 mmTorr. Other values ​​of the first chamber pressure are within the scope of this disclosure.

[0089] In some embodiments, a first etching operation patternes at least one of a third electrode layer 802, a second electrode layer 702, or a first electrode layer 602 to form at least one of a GAFP 1108, a gate electrode 1106, a residual electrode layer 1224 adjacent to the GAFP 1108, a first byproduct 1220 on the GAFP 1108, or a second byproduct 1222 on the residual electrode layer 1224. In some embodiments, a first etching operation removes one or more portions of the third electrode layer 802 to form at least one of a third GAFP electrode layer 1116 or a third gate electrode layer 1136. In some embodiments, a first etching operation removes one or more portions of the second electrode layer 702 to form at least one of a second GAFP electrode layer 1114 or a second gate electrode layer 1134. In some embodiments, a first etching operation removes one or more portions of the first electrode layer 602 to form at least one of a residual electrode layer 1224, at least a portion of the first GAFP electrode layer 1112, or at least a portion of the second gate electrode layer 1134. In some embodiments, the first etching operation removes a first portion 1201 of the first electrode layer 602 (e.g., Figure 12A (As shown) to form a first portion 1112a of a first GAFP electrode layer 1112. In some embodiments, a residual electrode layer 1224 includes a portion of the first electrode layer 602 below the first portion 1201 of the first electrode layer 602 removed by a first etching operation. In some embodiments, a first byproduct 1220 is disposed on a first sidewall 1122 of the GAFP 1108. In some embodiments, a second byproduct 1222 is disposed on a surface 1226 (e.g., a top surface) of the residual electrode layer 1224. In some embodiments, the first sidewall 1122 of the GAFP 1108 includes a sidewall 1203 of a third GAFP electrode layer 1116, a sidewall 1205 of a second GAFP electrode layer 1114, or a sidewall 1207a of the first portion 1112a of the first GAFP electrode layer 1112.

[0090] In some embodiments, the first byproduct 1220 includes a first polymeric byproduct. In some embodiments, the first polymeric byproduct includes at least one of a carbon-based polymer, a metal-based polymer, or one or more other types of polymers. In some embodiments, the first byproduct 1220 includes a first metallic byproduct, such as at least one of TiN, Ti, TiW, TaN, TiAlN, TaAlN, HfN, AlCu, Co, Al, Cu, Mo, Ru, W, Ta, TiW, SiN, SiO2, Al2O3, AlN, TaN, TiAlN, or other metals. In some embodiments, the first byproduct 1220 (e.g., the first polymeric byproduct) includes residues from the second mask layer 902 (e.g., a photoresist), such as material transferred from the second patterned mask layer 1002 (e.g., a patterned photoresist) to the first sidewall 1122 of the GAFP 1108 during the first etching operation. In some embodiments, the first byproduct 1220 (e.g., a first metallic byproduct and / or a first polymeric byproduct) includes residues from at least one of the first electrode layer 602, the second electrode layer 702, or the third electrode layer 802, such as material transferred from at least one of the first electrode layer 602, the second electrode layer 702, or the third electrode layer 802 to the first sidewall 1122 of the GAFP 1108 during the first etching operation. In some embodiments, the first byproduct 1220 (e.g., the first polymeric byproduct) includes residues from the etching gas used in the first etching operation (e.g., at least one of a first halogenated gas or a first carrier gas). In some embodiments, the first byproduct 1220 (e.g., the first polymeric byproduct) includes residues from the etching tool, such as residues from the chamber wall defining the etching chamber. In some embodiments, the first byproduct 1220 (e.g., a first metallic byproduct and / or a first polymeric byproduct) comprises one or more products of one or more chemical reactions caused by the first etching operation, such as one or more reactions between the etching gas used in the first etching operation (e.g., at least one of a first halogenated gas or a first carrier gas) and at least one of the first electrode layer 602, the second electrode layer 702, or the third electrode layer 802. In some embodiments, the first byproduct 1220 (e.g., a first metallic byproduct and / or a first polymeric byproduct) comprises solid material retained on the first sidewall 1122 of the GAFP 1108 after the first etching operation is performed, such as solid material retained at least in part due to the volatility of the solid material being less than a threshold volatility.

[0091] In some embodiments, the second byproduct 1222 includes a second polymeric byproduct. In some embodiments, the second polymeric byproduct includes at least one of a carbon-based polymer, a metal-based polymer, or one or more other types of polymers. In some embodiments, the second byproduct 1222 includes a second metallic byproduct, such as at least one of TiN, Ti, TiW, TaN, TiAlN, TaAlN, HfN, AlCu, Co, Al, Cu, Mo, Ru, W, Ta, TiW, SiN, SiO2, Al2O3, AlN, TaN, TiAlN, or other metals. In some embodiments, the second byproduct 1222 (e.g., the second polymeric byproduct) includes residues from the second mask layer 902 (e.g., a photoresist), such as material transferred from the second patterned mask layer 1002 (e.g., a patterned photoresist) to the surface 1226 of the residual electrode layer 1224 during the first etching operation. In some embodiments, the second byproduct 1222 (e.g., a second metallic byproduct and / or a second polymeric byproduct) includes residues from at least one of the first electrode layer 602, the second electrode layer 702, or the third electrode layer 802, such as material transferred from at least one of the first electrode layer 602, the second electrode layer 702, or the third electrode layer 802 to the surface 1226 of the residual electrode layer 1224 during the first etching operation. In some embodiments, the second byproduct 1222 (e.g., a second polymeric byproduct) includes residues from the etching gas (e.g., at least one of a first halogenated gas or a first carrier gas) used in the first etching operation. In some embodiments, the second byproduct 1222 (e.g., a second polymeric byproduct) includes residues from the etching tool, such as residues from the chamber walls of the chamber (e.g., an etching chamber) defining the semiconductor device 100 in which the first etching operation is performed. In some embodiments, the second byproduct 1222 (e.g., a second metallic byproduct and / or a second polymeric byproduct) comprises one or more products of one or more chemical reactions caused by the first etching operation, such as one or more reactions between the etching gas used in the first etching operation (e.g., at least one of a first halogenated gas or a first carrier gas) and at least one of the first electrode layer 602, the second electrode layer 702, or the third electrode layer 802. In some embodiments, the second byproduct 1222 (e.g., a second metallic byproduct and / or a second polymeric byproduct) comprises solid material retained on the surface 1226 of the residual electrode layer 1224 after the first etching operation is performed, such as solid material retained at least in part due to its volatility being less than a threshold volatility.

[0092] In some embodiments, the first etching operation is performed such that the first thickness 1232 of the first byproduct 1220 on the GAFP 1108 is greater than the second thickness 1234 of the second byproduct 1222 on the residual electrode layer 1224. The ratio of the first thickness 1232 of the first byproduct 1220 on the GAFP 1108 to the second thickness 1234 of the second byproduct 1222 on the residual electrode layer 1224 is between at least one of the following ranges: about 1.5:1 to about 6.5:1, or about 3.5:1 to about 4.5:1. Other values ​​of the ratio are within the range of this disclosure. In some embodiments, the first thickness 1232 is greater than the second thickness 1234, which is at least in part due to the first ion bombardment intensity of the first etching operation at the first sidewall 1122 of the GAFP 1108 being less than the second ion bombardment intensity of the first etching operation at the surface 1226 of the residual electrode layer 1224. In some embodiments, during the first etching operation, the first ion bombardment intensity at the first sidewall 1122 is less than the second bombardment intensity because more ions are directed along the first ion bombardment direction toward one or more horizontal surfaces of the semiconductor device 100 (e.g., surface 1226 of the residual electrode layer 1224) rather than toward one or more vertical and / or tapered surfaces of the semiconductor device 100 (e.g., the first sidewall 1122). In some embodiments, the first ion bombardment intensity at the first sidewall 1122 of the GAFP 1108 during the first etching operation is less than the second ion bombardment intensity at the surface 1226 of the residual electrode layer 1224 during the first etching operation. This results in more efficient removal of byproducts on the surface 1226 of the residual electrode layer 1224 than on the first sidewall 1122 of the GAFP 1108, such that the first thickness 1232 is greater than the second thickness 1234.

[0093] In some embodiments, the first thickness 1232 of the first byproduct 1220 on the GAFP 1108 is greater than the second thickness 1234 of the second byproduct 1222 on the residual electrode layer 1224. This is at least in part because the first chemical reactivity at the first sidewall 1122 of the GAFP 1108 is less than the second chemical reactivity at the surface 1226 of the residual electrode layer 1224. In some embodiments, the lesser chemical reactivity at the first sidewall 1122 results in a greater rate of byproduct removal at the surface 1226 of the residual electrode layer 1224 (e.g., immediately upon formation) compared to the first sidewall 1122 of the GAFP 1108. Consequently, a greater amount of byproduct accumulates on the first sidewall 1122 of the GAFP 1108 without being removed compared to the surface 1226 of the residual electrode layer 1224.

[0094] In some embodiments, the first thickness 1232 of the first byproduct 1220 on the GAFP 1108 is greater than the second thickness 1234 of the second byproduct 1222 on the residual electrode layer 1224. This is at least in part due to the deposition of byproducts formed by the second patterned mask layer 1002 (e.g., photoresist material) on the first sidewall 1122 of the GAFP 1108 at a greater rate than on the surface 1226 of the residual electrode layer 1224. In some embodiments, the greater rate on the first sidewall 1122 than on the surface 1226 is due to at least one of the composition of the first carrier gas, the composition of the first carrier gas, the first etch pressure, or the first RF power. In some embodiments, the byproducts formed by the second patterned mask layer 1002 form a first local hard mask on the first sidewall 1122. In some embodiments, the first byproduct 1220 includes the first local hard mask.

[0095] Figures 12C to 12D Aspects of a second etching operation according to some embodiments are illustrated. In some embodiments, the second etching operation is performed in response to performing a first etching operation. The second etching operation includes a second RIE operation. In some embodiments, the second etching operation additionally or alternatively includes one or more other types of etching operations.

[0096] Figure 12C A portion 1010 is shown during a second etching operation of a second etching process according to some embodiments. Figure 12D A portion 1010 following the execution of a second etching operation is shown according to some embodiments. In some embodiments, the second etching operation is performed using at least one of the following parameters: a second etching gas, a second RF power, a second ion bombardment direction (e.g., bombardment tilt angle) that directs ions toward the semiconductor device 100 during the second etching operation, or a second chamber pressure corresponding to the pressure in the etching chamber (e.g., in which the semiconductor device 100 undergoes the second etching operation).

[0097] In some embodiments, the second etching operation includes applying a second RF power to the electrodes of an etching tool to generate plasma from a second etching gas in an etching chamber. In some embodiments, the second etching gas is dissociated by an electric field generated using the second RF power to generate ions of the plasma. In some embodiments, the ions are accelerated toward the semiconductor device 100 in a second bombardment direction, for example, this is at least in part due to a bias voltage induced by the second RF power. In some embodiments, the second ion bombardment direction is influenced by at least one of the orientation of the electric field or the pressure of the second chamber. In some embodiments, the second ion bombardment direction includes direction 1230 (e.g., Figure 12B(as shown) or other suitable directions. In some embodiments, the second ion bombardment direction is at least one of the directions perpendicular to the surface 1238 of the third dielectric layer 124 or parallel to the z-axis.

[0098] In some embodiments, the second etching gas includes at least one of N2, Ar, He-O2, HF, HCl, HBr, Cl2, F2, SF6, CHF3, BCl3, CF4, or other suitable gases. The second RF power is between about 300 watts and about 900 watts. Other values ​​of the second RF power are within the range of this disclosure. In some embodiments, the second RF power is less than the first RF power. In some embodiments, the second RF power is controlled to control at least one of the ion dissociation rate, ion bombardment intensity, or etching rate of the second etching operation. During the second etching operation, the etching rate of the electrode layer (e.g., at least one of the residual electrode layer 1224 or the first electrode layer 602) is less than about 500 angstroms / minute. Other values ​​of the etching rate are within the range of this disclosure. In some embodiments, an increase in the second RF power results in an increase in at least one of the ion dissociation rate, ion bombardment intensity, or etching rate of the second etching operation. In some embodiments, the second chamber pressure is less than the first chamber pressure. The second chamber pressure is between about 1 mmTorr and about 100 mmTorr. Other values ​​of the first chamber pressure are within the range of this disclosure. In some embodiments, a second chamber pressure between about 1 mmTorr and about 100 mmTorr is advantageous for physical bombardment during the second etching operation. In some embodiments, the second chamber pressure is lower than the first chamber pressure.

[0099] In some embodiments, the second etching gas has etching selectivity, such that the second etching process removes and / or etches away the second byproduct 1222, while removing and / or etching away little or no of at least one of the residual electrode layer 1224. In some embodiments, the second etching operation removes a first portion of the first byproduct 1220 from the GAFP 1108, wherein the second portion 1240 of the first byproduct 1220 (e.g., ...) Figure 12D (As shown) Remains on GAFP 1108 after the second etching operation (e.g., on the first sidewall 1122 of GAFP 1108). Figure 12C In some embodiments, the byproduct of the first portion of the first byproduct 1220 (removed during the second etching operation) is shown as a dashed line object, and the byproduct of the second portion 1240 of the first byproduct 1220 (retained on the GAFP 1108 after the second etching operation) is shown as a solid line object. In some embodiments, the first portion of the first byproduct 1220 is along one or more paths 1248 (in... Figure 12C(Seen as dashed arrows in the diagram) and / or one or more other paths are removed from the first sidewall 1122 of the GAFP 1108. In some embodiments, a second etching operation is performed such that at most a first threshold proportion of the first byproduct 1220 is removed from the first sidewall 1122 of the GAFP 1108 (e.g., a first portion of the first byproduct 1220 removed during the second etching operation constitutes at most a first threshold proportion of the first byproduct 1220). The first threshold proportion is between about 0% and about 50%. Other values ​​of the first threshold proportion are within the scope of this disclosure. In some embodiments, a second etching operation is performed such that at least a second threshold proportion of the first sidewall 1122 of the GAFP 1108 is covered by a second portion 1240 of the first byproduct 1220 remaining on the first sidewall 1122 of the GAFP 1108 after the second etching operation. The second threshold proportion is between about 80% and about 100%. Other values ​​of the second threshold proportion are within the scope of this disclosure. In some embodiments, a second portion 1240 of the first byproduct 1220 forms a second local hard mask on the first sidewall 1122, which protects the first sidewall 1122 during one or more subsequent etching operations.

[0100] In some embodiments, the second etching operation removes the second byproduct 1222 from the residual electrode layer 1224. In some embodiments, the second byproduct 1222 travels along one or more paths 1246 (in... Figure 12C (shown as dashed arrows in the diagram) and / or one or more other paths are removed from the residual electrode layer 1224. In some embodiments, the second etching operation removes only a first portion of the second byproduct 1222 from the residual electrode layer 1224, wherein the second portion 1242 of the second byproduct 1222 (as shown by dashed arrows in the diagram) and / or one or more other paths are removed from the residual electrode layer 1224. Figure 12D (As shown) Remains on the residual electrode layer 1224 after the second etching operation. In some embodiments, the second etching operation is performed such that a first removal rate of the first byproduct 1220 per unit length along the first sidewall 1122 of the GAFP 1108 during the second etching operation is less than a second removal rate of the second byproduct 1222 per unit length along the surface 1226 of the residual electrode layer 1224 during the second etching operation.

[0101] exist Figure 12CIn some embodiments, the byproduct of the first portion of the second byproduct 1222 (removed during the second etching operation) is shown as a dashed line object, and the byproduct of the second portion 1242 of the second byproduct 1222 (remaining on the residual electrode layer 1224 after the second etching operation) is shown as a solid line object. In some embodiments, the second etching operation is performed such that at least a third threshold percentage of the second byproduct 1222 is removed from the residual electrode layer 1224. The third threshold percentage is between about 50% and about 100%. Other values ​​of the third threshold percentage are within the scope of this disclosure. In some embodiments, the second etching operation is performed such that at most a fourth threshold percentage of the surface 1226 of the residual electrode layer 1224 is covered by the second portion 1242 of the second byproduct 1222 remaining on the residual electrode layer 1224 after the second etching operation (e.g., to allow for subsequent etching of the residual electrode layer 1224). The fourth threshold percentage is between about 0% and about 20%. Other values ​​of the fourth threshold percentage are within the scope of this disclosure. Embodiments in which the second etching operation removes all of the second byproduct 1222 are contemplated.

[0102] In some embodiments, one or more results achieved by the second etching operation (e.g., at least one of the following results): a first removal rate of the first byproduct 1220 on the first sidewall 1122 is less than a second removal rate of the second byproduct 1222 on the residual electrode layer 1224; at most a first threshold proportion of the first byproduct 1220 is removed from the first sidewall 1122 of the GAFP 1108 to leave a second portion 1240 of the first byproduct 1220; the second portion 1240 of the first byproduct 1220 covers the GAFP 1108 at least a second threshold ratio of the first sidewall 1122; at least a third threshold ratio of the second byproduct 1222 is removed from the residual electrode layer 1224 to remove all of the second byproduct 1222 or leave a second portion 1242 of the second byproduct 1222; the second portion 1242 of the second byproduct 1222 covers a surface 1226 of the residual electrode layer 1224 at most a fourth threshold ratio; a second local hard mask is formed on the first sidewall 1122 to protect the first sidewall 1122; or one or more other results) at least in part due to the first processing time of the second etching operation (e.g., the semiconductor device 100 being exposed to plasma and / or etchant in the second etching operation) being less than the first threshold processing time, GAFP The first thickness 1232 of the first byproduct 1220 on 1108 is greater than the second thickness 1234 of the second byproduct on the residual electrode layer 1224, the second chamber pressure is between about 1 mmTorr and 100 mmTorr, or the advantage of physical bombardment and / or the advantage of chemical interaction in the second etching operation is increased and / or reduced (e.g., this is facilitated by setting the second chamber pressure between about 1 mmTorr and about 100 mmTorr).

[0103] Configuring the first processing time of the second etching operation to be less than the first threshold processing time provides the removal of the second byproduct 1222 from the residual electrode layer 1224 while leaving a second portion 1240 of the first byproduct 1220 on the first sidewall 1122 of the GAFP 1108 (e.g., a second local hard mask). However, setting the first processing time to a duration greater than the first threshold processing time may result in the second portion 1240 of the first byproduct 1220 being removed during the etching operation, thereby leaving the first sidewall 1122 of the GAFP 1108 unprotected after the second etching operation.

[0104] In some embodiments, the third etching operation is performed in response to the second etching operation. In some embodiments, the third etching operation is performed to remove the residual electrode layer 1224. In some embodiments, removing the residual electrode layer 1224 extends the first sidewall 1122 of the GAFP 1108 such that the first sidewall 1122 is adjacent to or in contact with the third dielectric layer 124. In some embodiments, the third etching operation includes a multi-stage operation including a first etching stage (e.g., a high-polymerization operation) and a second etching stage (e.g., an over-etching operation).

[0105] Figures 12E to 12F Aspects of a first etching stage according to some embodiments are illustrated. In some embodiments, the first etching stage is performed in response to performing a second etching operation. The first etching stage includes a third RIE operation. In some embodiments, the first etching stage additionally or alternatively includes one or more other types of etching operations.

[0106] Figure 12E A portion 1010 is shown during the first etch stage of performing a third etch operation, according to some embodiments. Figure 12F A portion 1010 following the execution of a first etching stage is shown according to some embodiments. In some embodiments, the first etching stage is performed using at least one of the following parameters: a second halogen-containing gas, a second carrier gas, a third RF power, a third ion bombardment direction (e.g., bombardment tilt angle) in which ions are directed to the semiconductor device 100 during the first etching stage, or a third chamber pressure corresponding to the pressure in the etching chamber (e.g., in which the semiconductor device 100 undergoes the first etching stage).

[0107] In some embodiments, the first etching stage includes supplying a second halogen-containing gas and a second carrier gas into an etching chamber. In some embodiments, the first etching stage includes applying a third RF power to the electrodes of an etching tool to generate plasma from at least one of the second halogen-containing gas or the second carrier gas in the etching chamber. In some embodiments, at least one of the second halogen-containing gas or the second carrier gas is dissociated using an electric field generated by the third RF power to generate ions of the plasma. In some embodiments, ions are accelerated toward the semiconductor device 100 in a third ion bombardment direction, for example, at least in part due to a bias voltage induced by the third RF power. In some embodiments, the third ion bombardment direction is influenced by at least one of the orientation of the electric field or the pressure of the third chamber. In some embodiments, the third ion bombardment direction includes direction 1230 (e.g., Figure 12B (as shown) or other suitable directions. In some embodiments, the third ion bombardment direction is at least one of the directions perpendicular to the surface 1238 of the third dielectric layer 124 or parallel to the z-axis.

[0108] In some embodiments, the second halogenated gas includes at least one of HF, HCl, HBr, Cl2, F2, SF6, CHF3, BCl3, CF4, or other suitable gases. In some embodiments, the second carrier gas includes at least one of an inert gas, N2, Ar, He-O2, or other suitable gases. In some embodiments, the second halogenated gas used in the first etching stage of the third etching operation is the same as the first halogenated gas used in the first etching operation. The third RF power is between about 300 watts and about 900 watts. Other values ​​of the third RF power are within the scope of this disclosure. In some embodiments, the third RF power is approximately equal to the second RF power. In some embodiments, the third RF power is less than the first RF power. In some embodiments, the third RF power is controlled to control at least one of the ion dissociation rate, ion bombardment intensity, or etching rate of the first etching stage. In some embodiments, an increase in the third RF power results in an increase in at least one of the ion dissociation rate, ion bombardment intensity, or etching rate of the first etching stage. In some embodiments, the third chamber pressure is less than the first chamber pressure. The third chamber pressure is between about 1 mmTorr and about 100 mmTorr. Other values ​​of the third chamber pressure are within the scope of this disclosure. In some embodiments, the pressure in the third chamber is approximately equal to the pressure in the second chamber.

[0109] In some embodiments, the first etching stage removes the residual electrode layer 1224 to extend the first sidewall 1122 of the GAFP 1108, thereby contacting and exposing a portion 1270 of the third dielectric layer 124 (e.g., ...). Figure 12E and Figure 12FAs shown). In some embodiments, the residual electrode layer 1224 is removed to form a second portion 1112b of the first GAFP electrode layer 1112 (as shown). Figure 12E (As shown). In some embodiments, the first sidewall 1122 of the GAFP 1108 includes the sidewall 1207b of the second portion 1112b of the first GAFP electrode layer 1112 (as shown). Figure 12E (As shown). Therefore, according to some embodiments, the first GAFP electrode layer 1112 of GAFP 1108 has a sidewall 1207, which includes a sidewall 1207a of a first portion 1112a of the first GAFP electrode layer 1112 and a sidewall 1207b of a second portion 1112b of the first GAFP electrode layer 1112.

[0110] In some embodiments, the third byproduct 1260 (e.g.) Figure 12E and Figure 12F (As shown) Remains on the first sidewall 1122 after the first etching stage. In some embodiments, the third byproduct 1260 includes the amount (e.g., some or all) of the second portion 1240 of the first byproduct 1220 retained on the GAFP 1108 after the second etching operation. Figure 12D As shown). In some embodiments, the third byproduct 1260 includes the third polymer byproduct 1268 (in... Figure 12E and Figure 12F (Shown as a pattern-filled object). In some embodiments, the third byproduct 1260 forms a third local hard mask on the first sidewall 1122, which protects the first sidewall 1122 during one or more subsequent etching operations.

[0111] In some embodiments, the third polymer byproduct 1268 comprises at least one of a carbon-based polymer, a metal-based polymer, or one or more other types of polymers. In some embodiments, the third polymer byproduct 1268 comprises residues from the second mask layer 902 (e.g., a photoresist), such as material transferred from the second patterned mask layer 1002 (e.g., a patterned photoresist) to the first sidewall 1122 of the GAFP 1108 during the first etching stage of the third etching operation. In some embodiments, the third polymer byproduct 1268 comprises residues from the etching gas (e.g., at least one of a second halogenated gas or a second carrier gas) used in the first etching stage of the third etching operation. In some embodiments, the third polymer byproduct 1268 comprises residues from the etching tool, such as residues from the chamber walls defining the etching chamber. In some embodiments, the third polymer byproduct 1268 comprises one or more products of one or more chemical reactions caused by the first etching stage of the third etching operation, such chemical reactions being, for example, one or more reactions between an etching gas (e.g., at least one of a second halogenated gas or a second carrier gas) used in the first etching stage of the third etching operation and at least one of the residual electrode layer 1224 or the third dielectric layer 124. In some embodiments, the third polymer byproduct 1268 comprises solid material retained on the first sidewall 1122 of the GAFP 1108 after the first etching stage of the third etching operation, for example, this is at least in part due to the volatility of the solid material being less than a threshold volatility. In some embodiments, the third polymer byproduct 1268 does not include metals.

[0112] In some embodiments, the fourth polymer byproduct 1262 (such as...) Figure 12E(As shown) is formed on the third dielectric layer 124 during the first etching stage. In some embodiments, the fourth polymer byproduct 1262 comprises at least one of a carbon-based polymer, a metal-based polymer, or one or more other types of polymers. In some embodiments, the fourth polymer byproduct 1262 comprises residues from the second mask layer 902 (e.g., a photoresist), such as material transferred from the second patterned mask layer 1002 (e.g., a patterned photoresist) to the third dielectric layer 124 during the first etching stage of the third etching operation. In some embodiments, the fourth polymer byproduct 1262 comprises residues from the etching gas (e.g., at least one of a second halogenated gas or a second carrier gas) used in the first etching stage of the third etching operation. In some embodiments, the fourth polymer byproduct 1262 comprises residues from the etching tool, such as residues from the chamber wall defining the etching chamber. In some embodiments, the fourth polymer byproduct 1262 comprises one or more products of one or more chemical reactions caused by the first etching stage of the third etching operation, such chemical reactions being, for example, one or more reactions between an etching gas (e.g., at least one of a second halogenated gas or a second carrier gas) used in the first etching stage of the third etching operation and at least one of the residual electrode layer 1224 or the third dielectric layer 124. In some embodiments, the fourth polymer byproduct 1262 does not include metals.

[0113] In some embodiments, during the first etch phase of the third etch operation, the fifth polymer byproduct of the fourth polymer byproduct 1262 is removed from the third dielectric layer 124. In some embodiments, the fifth polymer byproduct includes some or all of the fourth polymer byproduct 1262. In some embodiments, some or all of the fifth polymer byproduct is carried along one or more paths 1272 (e.g., Figure 12E (As indicated by the dashed arrow in the diagram) and / or one or more other paths are transferred to the first sidewall 1122 of GAFP 1108. In some embodiments, the fourth polymer byproduct 1262 includes a sixth polymer byproduct 1274 (as shown by the dashed arrow in the diagram) retained on the third dielectric layer 124 after the first etching stage. Figure 12E and Figure 12F (As shown). In Figure 12E In the diagram, the fifth polymer byproduct (removed from the third dielectric layer 124 and / or transferred to the first sidewall 1122 or other locations of GAFP 1108 during the first etching stage) is shown as a dashed white-filled object, and the sixth polymer byproduct 1274 is shown as a solid-line pattern-filled object.

[0114] In some embodiments, the first etching stage of performing the third etching operation causes at most a fifth threshold proportion of the surface of the (exposed) portion 1270 of the third dielectric layer 124 to be retained on the third dielectric layer 124 after the first etching stage as a sixth polymer byproduct 1274 (such as...) Figure 12E and Figure 12F (As shown) coverage (e.g., to allow subsequent etching of the third dielectric layer 124). The fifth threshold ratio is between about 0% and about 20%. Other values ​​for the fifth threshold ratio are within the scope of this disclosure.

[0115] In some embodiments, the second etching stage of the third etching operation is performed in response to the first etching stage of the third etching operation. Figure 12G A portion 1010 is shown after a second etching stage in which a third etching operation is performed, according to some embodiments. In some embodiments, the second etching stage is performed using at least one of the following parameters: a third halogen-containing gas, a third carrier gas, a fourth RF power, a fourth ion bombardment direction (e.g., bombardment tilt angle) that directs ions to the semiconductor device 100 during the second etching stage, or a fourth chamber pressure corresponding to the pressure in the etching chamber (e.g., in which the semiconductor device 100 undergoes the second etching stage).

[0116] In some embodiments, the second etching stage includes supplying a third halogen-containing gas and a third carrier gas into the etching chamber. In some embodiments, a first flow rate ratio of the second halogen-containing gas to the second carrier gas supplied to the etching chamber during the first etching stage is greater than a second flow rate ratio of the third halogen-containing gas to the third carrier gas supplied to the etching chamber during the first etching stage. In some embodiments, the first flow rate ratio is between about 2 times and about 3 times the second flow rate ratio. In some embodiments, the second etching stage includes applying a fourth RF power to the electrodes of an etching tool to generate plasma from at least one of the third halogen-containing gas or the third carrier gas in the etching chamber. In some embodiments, at least one of the third halogen-containing gas or the third carrier gas is dissociated using an electric field generated by the fourth RF power to generate ions of the plasma. In some embodiments, ions are accelerated toward the semiconductor device 100 in a fourth ion bombardment direction, for example, at least in part due to a bias voltage induced by the fourth RF power. In some embodiments, the fourth ion bombardment direction is influenced by at least one of the orientation of the electric field or the pressure of the fourth chamber. In some embodiments, the fourth ion bombardment direction includes a direction 1230 (e.g., Figure 12B (as shown) or other suitable directions. In some embodiments, the fourth ion bombardment direction is at least one of the directions perpendicular to the surface 1238 of the third dielectric layer 124 or parallel to the z-axis.

[0117] In some embodiments, the third halogenated gas includes at least one of HF, HCl, HBr, Cl2, F2, SF6, CHF3, BCl3, CF4, or other suitable gases. In some embodiments, the third carrier gas includes at least one of an inert gas, N2, Ar, He-O2, or other suitable gases. In some embodiments, the third halogenated gas used in the second etching stage of the third etching operation is the same as at least one of the first halogenated gas used in the first etching operation or the second halogenated gas used in the first etching stage of the third etching operation. The fourth RF power satisfies at least one of the following conditions: less than about 900 watts or less than about 300 watts. Other values ​​of the fourth RF power are within the scope of this disclosure. In some embodiments, the fourth RF power is less than at least one of the first RF power, the second RF power, or the third RF power. The ratio of the third RF power to the fourth RF power is between about 2:1 and about 4:1. Other values ​​of the ratio are within the scope of this disclosure. In some embodiments, the fourth RF power is controlled to control at least one of the ion dissociation rate, ion bombardment intensity, or etching rate of the second etching stage. In some embodiments, the increase in the fourth RF power results in an increase in at least one of the ion dissociation rate, ion bombardment intensity, or etch rate of the second etching stage.

[0118] In some embodiments, the pressure in the fourth chamber is less than the pressure in the first chamber. The pressure in the fourth chamber is between about 1 mmTorr and about 100 mmTorr. Other values ​​for the pressure in the fourth chamber are within the scope of this disclosure. In some embodiments, the pressure in the fourth chamber is approximately equal to at least one of the pressure in the second chamber or the pressure in the third chamber.

[0119] In some embodiments, the second etching stage removes at least one of the third byproduct 1260, the sixth polymer byproduct 1274, or other byproducts (such as metal residues on the third dielectric layer 124). In some embodiments, the second etching stage removes a portion 1270 of the third dielectric layer 124 (such as metal residues on the third dielectric layer 124). Figure 12E and Figure 12F(As shown) a recess 1290 is formed in a third dielectric layer 124. In some embodiments, the recess 1290 is defined by a surface 1292 of the third dielectric layer 124 and a sidewall 1294 of the third dielectric layer 124 extending from the surface 1292 to a dielectric platform 1298 of the third dielectric layer 124. In some embodiments, the sidewall 1294 is tapered. The extension angle 1284 of the sidewall 1294 relative to at least one of the surface 1292, the surface 1238, or the x-axis is between about 120 degrees and about 160 degrees. The depth 1286 of the recess 1290 (e.g., a maximum depth) is between about 200 angstroms and about 500 angstroms. Other values ​​for the extension angle 1284 and the depth 1286 are within the scope of this disclosure. In some embodiments, the recess 1290 is formed such that the depth 1286 is not greater than a threshold depth (e.g., 500 angstroms) associated with the insufficient breakdown voltage. In some embodiments, forming the recess 1290 to a depth between about 200 angstroms and about 500 angstroms provides an increased breakdown voltage for the semiconductor device 100, for example, this is at least in part due to the dielectric constant of the third dielectric layer 124 being greater than that of the dielectric layer (e.g., ...). Figure 15 The dielectric constant of the fourth dielectric layer 1502 shown.

[0120] In some embodiments, the dielectric platform 1298 of the third dielectric layer 124 and the surface 1238 of the third dielectric layer 124 (below the first GAFP electrode layer 1112) are coplanar, such that a plane (e.g., a single plane) passes through the dielectric platform 1298 and the surface 1238 of the third dielectric layer 124. In some embodiments, this plane is parallel to the x-axis. In some embodiments, the height of the dielectric platform 1298 (relative to the z-axis) is approximately the same as the height of the surface 1238 (below the first GAFP electrode layer 1112). In some embodiments, the height of the dielectric platform 1298 is between about 10 angstroms and about 200 angstroms smaller than the height of the surface 1238 (below the first GAFP electrode layer 1112). The width 1296 of the dielectric platform 1298 is between about 20 nanometers and about 40 nanometers. Other values ​​for the width 1296 of the dielectric platform 1298 are within the scope of this disclosure. In some embodiments, the width 1296 corresponds to the distance along the x-axis between the first sidewall 1122 and the sidewall 1294 of the third dielectric layer 124 of the GAFP 1108.

[0121] The extension angle 1213 of the sidewall 1203 of the third GAFP electrode layer 1116 relative to at least one of surface 1292, surface 1238, or the x-axis satisfies at least one of the following conditions: at most about 50 degrees, at most about 88 degrees, or at most about 130 degrees. Other values ​​of the extension angle 1213 are within the scope of this disclosure. The extension angle 1215 of the sidewall 1205 of the second GAFP electrode layer 1114 relative to at least one of surface 1292, surface 1238, or the x-axis satisfies at least one of the following conditions: between about 50 degrees and about 130 degrees, or between about 50 degrees and about 88 degrees. Other values ​​of the extension angle 1215 are within the scope of this disclosure. In some embodiments, the extension angle 1215 of the sidewall 1205 of the second GAFP electrode layer 1114 is greater than or equal to the extension angle 1213 of the sidewall 1203 of the third GAFP electrode layer 1116. The extension angle 1217 of the sidewall 1207 of the first GAFP electrode layer 1112 relative to at least one of surface 1292, surface 1238, or the x-axis satisfies at least one of the following conditions: between about 70 degrees and about 120 degrees, greater than about 90 degrees, or greater than about 70 degrees. Other values ​​of the extension angle 1217 are within the scope of this disclosure. In some embodiments, the sidewall 1207 of the first GAFP electrode layer 1112 is tapered. In some embodiments, the sidewall 1207 of the first GAFP electrode layer 1112 has a vertical profile, and the extension angle 1217 is about 90 degrees.

[0122] Figure 13 The removal of a second patterned mask layer 1002 according to some embodiments is illustrated. In some embodiments, the second patterned mask layer 1002 is removed after one or more second target layers are patterned to form at least one of a gate electrode 1106 or a GAFP 1108. The second patterned mask layer 1002 is removed by at least one of the following techniques: performing a cleaning process to wash away the second patterned mask layer 1002, stripping the second patterned mask layer 1002, etching the second patterned mask layer 1002, CMP, or other suitable techniques.

[0123] In some embodiments, the GAFP 1108 has a first sidewall 1122 and a second sidewall 1124. In some embodiments, the second sidewall 1124 is formed by a second etching process, for example, simultaneously with the formation of the first sidewall 1122 and / or using one, some, or all of the techniques provided herein with respect to the formation of the first sidewall 1122 of the GAFP 1108. In some embodiments, the second sidewall 1124 has one, some, or all of the characteristics and / or features provided herein with respect to the first sidewall 1122 of the GAFP 1108. The second sidewall 1124 may be symmetrical or asymmetrical with respect to the first sidewall 1122.

[0124] In some embodiments, the gate electrode 1106 has a third sidewall 1126 and a fourth sidewall 1128. In some embodiments, the third sidewall 1126 is formed by a second etching process, for example, simultaneously with the formation of the first sidewall 1122 and / or using one or more of the techniques provided herein for forming the first sidewall 1122 of the GAFP 1108. In some embodiments, the third sidewall 1126 has one or more of the characteristics and / or features provided herein for the first sidewall 1122 of the GAFP 1108. In some embodiments, the fourth sidewall 1128 is formed by a second etching process, for example, simultaneously with the formation of the first sidewall 1122 and / or using one or more of the techniques provided herein for forming the first sidewall 1122 of the GAFP 1108. In some embodiments, the fourth sidewall 1128 has one or more of the characteristics and / or features provided herein for the first sidewall 1122 of the GAFP 1108. The fourth sidewall 1128 is symmetrical or asymmetrical with the third sidewall 1126.

[0125] Figures 14A to 14F Enlarged cross-sectional views of various versions of GAFP 1108 according to some embodiments are shown. Figures 14A to 14F The versions shown differ in sidewall dimensions, sidewall shapes, and / or sidewall angles. In some embodiments, GAFP 1108 has a trapezoidal shape. In some embodiments, the upper dimension 1492 of GAFP 1108 is smaller than the lower dimension 1494 of GAFP 1108.

[0126] In some embodiments, the second sidewall 1124 of GAFP 1108 includes the sidewall 1403 of the third GAFP electrode layer 1116, the sidewall 1405 of the second GAFP electrode layer 1114, or the sidewall 1407 of the first GAFP electrode layer 1112. The sidewall 1403 of the third GAFP electrode layer 1116 extends at an angle 1413 relative to at least one of surface 1292, surface 1238, or the x-axis (e.g., ...). Figures 14A to 14F (As shown) satisfies at least one of the following conditions: at most about 50 degrees, at most about 88 degrees, or at most about 130 degrees. Other values ​​for the extension angle 1413 are within the scope of this disclosure. In some embodiments, the extension angle 1413 is approximately equal to the extension angle 1213 of the sidewall 1203 of the third GAFP electrode layer 1116. In some embodiments, the slope of the sidewall 1403 of the third GAFP electrode layer 1116 is opposite in polarity to the slope of the sidewall 1203 of the third GAFP electrode layer 1116. The sidewall 1403 of the third GAFP electrode layer 1116 is symmetrical or asymmetrical with respect to the sidewall 1203 of the third GAFP electrode layer 1116.

[0127] The sidewall 1405 of the second GAFP electrode layer 1114 extends at an angle 1415 relative to at least one of the surfaces 1292, 1238, or the x-axis (e.g., ...). Figures 14A to 14F (As shown) satisfies at least one of the following conditions: between about 50 degrees and about 130 degrees, or between about 50 degrees and about 88 degrees. Other values ​​of the extension angle 1415 are within the scope of this disclosure. In some embodiments, the extension angle 1415 is approximately equal to the extension angle 1215 of the sidewall 1205 of the second GAFP electrode layer 1114. In some embodiments, the slope of the sidewall 1405 of the second GAFP electrode layer 1114 is opposite in polarity to the slope of the sidewall 1205 of the second GAFP electrode layer 1114. In some embodiments, the extension angle 1415 of the sidewall 1405 of the second GAFP electrode layer 1114 is greater than or equal to the extension angle 1413 of the sidewall 1403 of the third GAFP electrode layer 1116.

[0128] The sidewall 1407 of the first GAFP electrode layer 1112 extends at an angle 1417 relative to at least one of surface 1292, surface 1238, or the x-axis (in Figures 14A to 14F (As shown in the figure) satisfies at least one of the following conditions: between about 70 degrees and about 120 degrees, greater than about 90 degrees, or greater than about 70 degrees. Other values ​​for the extension angle 1417 are within the scope of this disclosure. In some embodiments, the sidewall 1407 of the first GAFP electrode layer 1112 is tapered. In some embodiments, the sidewall 1407 of the first GAFP electrode layer 1112 has a vertical profile and the extension angle 1417 is about 90 degrees. In some embodiments, the extension angle 1417 is approximately equal to the extension angle 1217 of the sidewall 1207 of the first GAFP electrode layer 1112. In some embodiments, the slope of the sidewall 1407 of the first GAFP electrode layer 1112 is opposite in polarity to the slope of the sidewall 1207 of the first GAFP electrode layer 1112.

[0129] Figure 14A A first version of GAFP 1108 according to some embodiments is shown. Figure 14B A second version of GAFP 1108 according to some embodiments is shown. According to some embodiments, in the second version of GAFP 1108, at least one of the following conditions is satisfied: the sidewall 1207 of the first GAFP electrode layer 1112 has a vertical profile, or the sidewall 1407 of the first GAFP electrode layer 1112 has a vertical profile.

[0130] Figure 14CA third version of GAFP 1108 according to some embodiments is shown. According to some embodiments, in the third version of GAFP 1108, the sidewall 1207 of the first GAFP electrode layer 1112 has a first bottom segment 1422 and a first raised segment 1424 above the first bottom segment 1422. The first bottom segment 1422 has an extension angle 1217, and the first raised segment 1424 has a first raised angle profile, the first raised angle profile having a first variable extension angle relative to at least one of surface 1292, surface 1238, or the x-axis. In some embodiments, at least a portion of the first bottom segment 1422 has a vertical profile (e.g., the extension angle 1217 is approximately 90 degrees). In some embodiments, at least a portion of the first bottom segment 1422 is tapered. In some embodiments, the extension angle 1217 is constant or varies along the first bottom segment 1422. In some embodiments, throughout the first bottom section 1422, the extension angle 1217 satisfies at least one of the following conditions: between about 70 degrees and about 120 degrees, greater than about 90 degrees, or greater than about 70 degrees. In some embodiments, the extension angle 1217 is constant throughout the first bottom section 1422. In some embodiments, relative to the first vertical range 1428 of the first GAFP electrode layer 1112 (e.g., along the z-axis), the first bottom section 1422 of the sidewall 1207 spans at least about 25% of the first vertical range 1428 of the first GAFP electrode layer 1112. In some embodiments, the first bottom section 1422 of the sidewall 1207 spans at least about 50% of the first vertical range 1428 of the first GAFP electrode layer 1112. In some embodiments, the first bottom section 1422 of the sidewall 1207 spans at least about 70% of the first vertical range 1428 of the first GAFP electrode layer 1112. In some embodiments, the first bottom segment 1422 of the sidewall 1207 spans approximately 75% of the first vertical extent 1428 of the first GAFP electrode layer 1112. In some embodiments, the length of the first vertical extent 1428 corresponds to the thickness 604 of the first electrode layer 602 (e.g., ...). Figure 6A (As shown).

[0131] In some embodiments, the first etching operation is configured to form a first raised segment 1424 of the sidewall 1207 with a first raised angle profile. In some embodiments, the first etching operation stops etching based on one or more endpoint signals detected during the first etching operation. In some embodiments, etching stops at a first point along a first transition region 1426 of the first sidewall 1122, the first point including a portion of the sidewall 1205 of the second GAFP electrode layer 1114 and at least a portion of the first bottom segment 1422. In some embodiments, the location of the interface between the second GAFP electrode layer 1114 and the first GAFP electrode layer 1112 is determined based on one or more endpoint signals, and the first point at which the first etching operation stops etching is determined based on the location of the interface. In some embodiments, at least one of the following conditions is met: the first bottom segment 1422 corresponds to the sidewall 1207a of the first portion 1112a of the first GAFP electrode layer 1112 (e.g., ...). Figure 12B As shown), or the first protruding segment 1424 corresponds to the sidewall 1207b of the second portion 1112b of the first GAFP electrode layer 1112 (as shown). Figure 12E (As shown). In some embodiments, the first raised section 1424 of the sidewall 1207 is formed to have a first raised angle profile at least in part due to the difference in etch rates between different locations of the semiconductor device 100. In some embodiments, at least one of a first halogen-containing gas, a first carrier gas, a first RF power, a first ion bombardment direction, or a first chamber pressure is selected, controlled, or adjusted (e.g., dynamically in situ adjusted) to achieve the first raised section 1424 of the sidewall 1207 having the first raised angle profile, for example by controlling byproducts to promote the formation of the first raised section 1424 of the sidewall 1207 having the first raised angle profile.

[0132] According to some embodiments, in a third version of GAFP 1108, the sidewall 1407 of the first GAFP electrode layer 1112 has a second bottom section 1432 and a second raised section 1434 above the second bottom section 1432. The second bottom section 1432 has an extension angle 1417, and the second raised section 1434 has a second raised angle profile with a second variable extension angle relative to at least one of surface 1292, surface 1238, or the x-axis. In some embodiments, at least a portion of the second bottom section 1432 has a vertical profile (e.g., the extension angle 1417 is about 90 degrees). In some embodiments, at least a portion of the second bottom section 1432 is tapered. In some embodiments, the extension angle 1417 is constant or varies along the second bottom section 1432. In some embodiments, the extension angle 1417 satisfies at least one of the following conditions throughout the second bottom section 1432: between about 70 degrees and about 120 degrees, greater than about 90 degrees, or greater than about 70 degrees. In some embodiments, the extension angle 1417 is constant throughout the second bottom section 1432. In some embodiments, the second bottom section 1432 of the sidewall 1407 spans at least about 25% of the second vertical range 1438 of the first GAFP electrode layer 1112 (e.g., along the z-axis). In some embodiments, the second bottom section 1432 of the sidewall 1407 spans at least about 50% of the second vertical range 1438 of the first GAFP electrode layer 1112. In some embodiments, the second bottom section 1432 of the sidewall 1407 spans at least about 70% of the second vertical range 1438 of the first GAFP electrode layer 1112. In some embodiments, the second bottom section 1432 of the sidewall 1407 spans about 75% of the second vertical range 1438 of the first GAFP electrode layer 1112. In some embodiments, the length of the second vertical range 1438 corresponds to the thickness 604 of the first electrode layer 602 (e.g., ...). Figure 6A (As shown). In some embodiments, the first etching operation uses one or more techniques provided herein for forming a first raised section 1424 of the sidewall 1207 with a first raised angle profile, and forms a second raised section 1434 of the sidewall 1407 with a second raised angle profile.

[0133] Figure 14DA fourth version of GAFP 1108 according to some embodiments is shown. According to some embodiments, in the fourth version of GAFP 1108, the sidewall 1207 of the first GAFP electrode layer 1112 has a third bottom segment 1442 and a first recessed segment 1444 above the third bottom segment 1442. The third bottom segment 1442 has an extension angle 1217, and the first recessed segment 1444 has a first recessed angle profile, the first recessed angle profile having a third variable extension angle relative to at least one of surface 1292, surface 1238, or the x-axis. In some embodiments, at least a portion of the third bottom segment 1442 has a vertical profile (e.g., the extension angle 1217 is approximately 90 degrees). In some embodiments, at least a portion of the third bottom segment 1442 is tapered. In some embodiments, the extension angle 1217 is constant or varies along the third bottom segment 1442. In some embodiments, throughout the third bottom section 1442, the extension angle 1217 satisfies at least one of the following conditions: between about 70 degrees and about 120 degrees, greater than about 90 degrees, or greater than about 70 degrees. In some embodiments, the extension angle 1217 is constant throughout the third bottom section 1442. In some embodiments, the third bottom section 1442 of the sidewall 1207 spans at least about 25% of the first vertical range 1428 of the first GAFP electrode layer 1112. In some embodiments, the third bottom section 1442 of the sidewall 1207 spans at least about 50% of the first vertical range 1428 of the first GAFP electrode layer 1112. In some embodiments, the third bottom section 1442 of the sidewall 1207 spans at least about 70% of the first vertical range 1428 of the first GAFP electrode layer 1112. In some embodiments, the third bottom section 1442 of the sidewall 1207 spans about 75% of the first vertical range 1428 of the first GAFP electrode layer 1112.

[0134] In some embodiments, the first etching operation is configured to form a first recessed segment 1444 of the sidewall 1207 with a first recessed angle profile. In some embodiments, the first etching operation stops etching based on one or more endpoint signals detected during the first etching operation. In some embodiments, etching stops at a first point along a first transition region 1426 of the first sidewall 1122, the first point including a portion of the sidewall 1205 of the second GAFP electrode layer 1114 and at least a portion of the third bottom segment 1442. In some embodiments, the location of the interface between the second GAFP electrode layer 1114 and the first GAFP electrode layer 1112 is determined based on one or more endpoint signals, and the first point at which the first etching operation stops etching is determined based on the location of the interface. In some embodiments, at least one of the following conditions is met: the third bottom segment 1442 corresponds to the sidewall 1207a of the first portion 1112a of the first GAFP electrode layer 1112 (e.g., ...). Figure 12B (as shown), or the first recessed section 1444 corresponds to the sidewall 1207b of the second portion 1112b of the first GAFP electrode layer 1112 (as shown). Figure 12E (As shown). In some embodiments, the first recessed segment 1444 of the sidewall 1207 is formed to have a first recessed angle profile at least in part due to the difference in etch rates between different locations of the semiconductor device 100. In some embodiments, at least one of a first halogen-containing gas, a first carrier gas, a first RF power, a first ion bombardment direction, or a first chamber pressure is selected, controlled, or adjusted (e.g., dynamically in situ adjusted) to achieve the first recessed segment 1444 of the sidewall 1207 having the first recessed angle profile, for example by controlling byproducts to promote the formation of the first recessed segment 1444 of the sidewall 1207 having the first recessed angle profile.

[0135] According to some embodiments, in a fourth version of GAFP 1108, the sidewall 1407 of the first GAFP electrode layer 1112 has a fourth bottom segment 1452 and a second recessed segment 1454 above the fourth bottom segment 1452. The fourth bottom segment 1452 has an extension angle 1417, and the second recessed segment 1454 has a second recessed angle profile with a fourth variable extension angle relative to at least one of surface 1292, surface 1238, or the x-axis. In some embodiments, at least a portion of the fourth bottom segment 1452 has a vertical profile (e.g., the extension angle 1417 is about 90 degrees). In some embodiments, at least a portion of the fourth bottom segment 1452 is tapered. In some embodiments, the extension angle 1417 is constant or varies along the fourth bottom segment 1452. In some embodiments, the extension angle 1417 satisfies at least one of the following conditions throughout the fourth bottom segment 1452: between about 70 degrees and about 120 degrees, greater than about 90 degrees, or greater than about 70 degrees. In some embodiments, the extension angle 1417 is constant throughout the fourth bottom section 1452. In some embodiments, the fourth bottom section 1452 of the sidewall 1407 spans at least about 25% of the second vertical range 1438 of the first GAFP electrode layer 1112. In some embodiments, the fourth bottom section 1452 of the sidewall 1407 spans at least about 50% of the second vertical range 1438 of the first GAFP electrode layer 1112. In some embodiments, the fourth bottom section 1452 of the sidewall 1407 spans at least about 70% of the second vertical range 1438 of the first GAFP electrode layer 1112. In some embodiments, the fourth bottom section 1452 of the sidewall 1407 spans about 75% of the second vertical range 1438 of the first GAFP electrode layer 1112. In some embodiments, the first etching operation uses one or more techniques provided herein for forming a first recessed segment 1444 of the sidewall 1207 with a first recessed angle profile, and forms a second recessed segment 1454 of the sidewall 1407 with a second recessed angle profile.

[0136] Figure 14E A fifth version of GAFP 1108 according to some embodiments is shown. According to some embodiments, in the fifth version of GAFP 1108, at least one of the following conditions is satisfied: the extension angle 1215 of the sidewall 1205 of the second GAFP electrode layer 1114 is greater than about 90 degrees, or the extension angle 1415 of the sidewall 1405 of the second GAFP electrode layer 1114 is greater than about 90 degrees. Figure 14FA sixth version of GAFP 1108 according to some embodiments is shown. According to some embodiments, in the sixth version of GAFP 1108, at least one of the following conditions is satisfied: the extension angle 1217 of the sidewall 1207 of the first GAFP electrode layer 1112 is greater than about 90 degrees, or the extension angle 1417 of the sidewall 1407 of the first GAFP electrode layer 1112 is greater than about 90 degrees.

[0137] Figure 15 A fourth dielectric layer 1502 is shown, formed over at least one of a third dielectric layer 124, a GAFP 1108, or a gate electrode 1106, according to some embodiments. In some embodiments, the fourth dielectric layer 1502 comprises a low-k dielectric material. In some embodiments, the fourth dielectric layer 1502 comprises at least one of SiO2, SiON, SiOC, SiOCN, or other suitable materials. In some embodiments, the fourth dielectric layer 1502 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The fourth dielectric layer 1502 satisfies at least one of the following conditions: it overlies the third dielectric layer 124, is in direct contact with the surface of the third dielectric layer 124, or is in indirect contact with the surface of the third dielectric layer 124. The fourth dielectric layer 1502 satisfies at least one of the following conditions: it covers GAFP 1108 and is in direct contact with GAFP 1108, or is in indirect contact with GAFP 1108. The fourth dielectric layer 1502 also satisfies at least one of the following conditions: it covers gate electrode 1106 and is in direct contact with gate electrode 1106, or is indirect contact with gate electrode 1106.

[0138] Figure 16 A fifth dielectric layer 1602 is shown formed on a fourth dielectric layer 1502 according to some embodiments. In some embodiments, the fifth dielectric layer 1602 comprises at least one of SiO2 or other suitable materials. In some embodiments, the fifth dielectric layer 1602 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The fifth dielectric layer 1602 satisfies at least one of the following conditions: it overlies the fourth dielectric layer 1502, is in direct contact with the surface of the fourth dielectric layer 1502, or is in indirect contact with the surface of the fourth dielectric layer 1502. In some embodiments, the fourth dielectric layer 1502 comprises at least one of an interlayer dielectric (ILD) layer or an intermetallic dielectric (IMD) layer.

[0139] The fifth dielectric layer 1602 differs from the fourth dielectric layer 1502, for example, by having a different material composition, such that an interface is defined between the fifth dielectric layer 1602 and the fourth dielectric layer 1502. In some embodiments, the fifth dielectric layer 1602 does not have a material composition different from the fourth dielectric layer 1502. However, the interface is defined between the fifth dielectric layer 1602 and the fourth dielectric layer 1502 because the fifth dielectric layer 1602 and the fourth dielectric layer 1502 are separate, distinct layers, etc. In some embodiments, the interface is defined by a discontinuity between the fifth dielectric layer 1602 and the fourth dielectric layer 1502 (e.g., molecular discontinuity, process-induced discontinuity, etc.) and / or a difference in at least one of the following: crystallinity, molecular structure, dopant concentration, etc., between the fifth dielectric layer 1602 and the fourth dielectric layer 1502.

[0140] Figure 17 A set of trenches formed in a fifth dielectric layer 1602 and a fourth dielectric layer 1502 according to some embodiments is shown. In some embodiments, the set of trenches is formed by at least one of photolithography, etching, or other suitable processes. In some embodiments, the set of trenches includes a first trench 1706, a second trench 1708, or a third trench 1710, wherein the first trench 1706 exposes a portion of the source electrode 112, the second trench 1708 exposes a portion of the gate electrode 1106, and the third trench 1710 exposes a portion of the drain electrode 114.

[0141] Figure 18 A conductive layer 1802 is shown formed on and / or in the set of trenches according to some embodiments. In some embodiments, the conductive layer 1802 includes at least one of a conductive material (e.g., one or more metals) or other suitable material. In some embodiments, the conductive layer 1802 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The conductive layer 1802 satisfies at least one of the following conditions: it is overlying the fifth dielectric layer 1602, in direct contact with the surface of the fifth dielectric layer 1602, or indirect contact with the surface of the fifth dielectric layer 1602. The conductive layer 1802 is in direct or indirect contact with at least one of the portions of the source electrode 112 exposed by the first trench 1706, the portions of the gate electrode 1106 exposed by the second trench 1708, or the portions of the drain electrode 114 exposed by the third trench 1710.

[0142] Figure 19A portion of conductive layer 1802 is shown being removed according to some embodiments to form a first set of vias. In some embodiments, the first set of vias includes via 1906, via 1908, or via 1910. In some embodiments, this portion of conductive layer 1802 is removed by at least one of CMP, etching, or other suitable techniques.

[0143] Figure 20 A sixth dielectric layer 2002 formed on a fifth dielectric layer 1602 according to some embodiments is shown. In some embodiments, the sixth dielectric layer 2002 comprises at least one of SiO2 or other suitable materials. In some embodiments, the sixth dielectric layer 2002 is formed by at least one of the following techniques: PVD, sputtering, CVD, MOCVD, PECVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. The sixth dielectric layer 2002 satisfies at least one of the following conditions: it overlies the fifth dielectric layer 1602, is in direct contact with the surface of the fifth dielectric layer 1602, or is in indirect contact with the surface of the fifth dielectric layer 1602. In some embodiments, the sixth dielectric layer 2002 comprises at least one of an ILD layer or an IMD layer.

[0144] The sixth dielectric layer 2002 differs from the fifth dielectric layer 1602, for example, by having a different material composition, such that an interface is defined between the sixth dielectric layer 2002 and the fifth dielectric layer 1602. In some embodiments, the sixth dielectric layer 2002 does not have a material composition different from the fifth dielectric layer 1602. However, the interface is defined between the sixth dielectric layer 2002 and the fifth dielectric layer 1602 because the sixth dielectric layer 2002 and the fifth dielectric layer 1602 are separate, distinct layers, etc. In some embodiments, the interface is defined by a discontinuity between the sixth dielectric layer 2002 and the fifth dielectric layer 1602 (e.g., molecular discontinuity, process-induced discontinuity, etc.) and / or a difference in at least one of the following: crystallinity, molecular structure, dopant concentration, etc., between the sixth dielectric layer 2002 and the fifth dielectric layer 1602.

[0145] Figure 21 The diagram illustrates the formation of a first set of conductors in a sixth dielectric layer 2002 according to some embodiments. In some embodiments, the first set of conductors includes conductor 2106, conductor 2108, or conductor 2110, with conductor 2106 covering via 1906, conductor 2108 covering via 1908, and conductor 2110 covering via 1910. In some embodiments, at least one of the first set of vias or the first set of conductors is formed by at least one of one or more dual damascene processes, one or more single damascene processes, or other suitable processes.

[0146] Figure 22 The diagram illustrates the formation of one or more dielectric layers 2292 above a sixth dielectric layer 2002 and conductive structures within those dielectric layers 2292. In some embodiments, the one or more dielectric layers 2292 include at least one of one or more ILD layers or one or more IMD layers. In some embodiments, the conductive structures include at least one of a second set of vias above a first set of conductors, a second set of conductors above a second set of conductors, a third set of vias above a second set of conductors, or a third set of conductors above a third set of conductors. The second set of vias includes at least one of vias 2206, 2208, or 2210. The second set of conductors includes at least one of conductors 2216, 2218, or 2220. The third set of vias includes at least one of vias 2226, 2228, or 2230. The third set of conductors includes at least one of conductors 2236, 2238, or 2240. Each of the conductive structures in one, some, or all of the conductive structures includes a conductive material, such as one or more metals, or other suitable materials. In some embodiments, the conductive structure is formed by at least one of one or more dual damascene processes, one or more single damascene processes, or other suitable processes.

[0147] In some embodiments, the work function energy of the gate electrode 1106 is between about 3 electron volts (eV) and about 5 eV. In some embodiments, a Schottky contact is formed between feature 120 (e.g., a p-type GaN structure) and the gate electrode 1106. In some embodiments, at least one of thickness 604, thickness 704, thickness 804, composition of the first electrode layer 602, composition of the second electrode layer 702, or composition of the third electrode layer 802 is selected and / or adjusted to adjust the work function energy. In some embodiments, the material (e.g., TiN) of the underlayer (e.g., the first gate electrode layer 1132) facilitates the formation of the Schottky contact. In some embodiments, feature 120 is configured to deplete the charge in the channel region of the semiconductor device 100. In some embodiments, to mitigate dielectric breakdown of one or more dielectric structures of the semiconductor device 100, the film scheme of one or more dielectric structures varies according to the electric field distribution in one or more dielectric structures during operation of the semiconductor device 100. In some embodiments, the first layer 620 (e.g., a p-type GaN structure) is selected and / or adjusted to adjust the work function energy. Figure 6B (As shown) is used as an adhesive layer to improve the adhesion between GAFP 1108 and the third dielectric layer 124.

[0148] Figure 23An electrode arrangement representation 2300 associated with a semiconductor device 100 according to some embodiments is shown. Electrode arrangement representation 2300 is a top view representation of a source electrode 112, a gate electrode 1106, a GAFP 1108, or a drain electrode 114 arranged relative to each other in a region 2302 of the semiconductor device 100. In some embodiments, the GAFP 1108 is arranged between the drain electrode 114 on a first side and the gate electrode 1106 and source electrode 112 on a second side.

[0149] In some embodiments, at least one of the GAFP 1108 or field plate 116 is configured to modulate or balance the electric field in the semiconductor device 100, such as the electric field in the region between the gate electrode 1106 and the drain electrode 114. The locations of the first sidewall 1122 of the GAFP 1108, the second sidewall 1124 of the GAFP 1108, the third sidewall 1126 of the gate electrode 1106, or the fourth sidewall 1128 of the gate electrode 1106 are shown as dashed outline regions. In some embodiments, the first sidewall 1122 satisfies at least one of the following conditions: facing or near the drain electrode 114. In some embodiments, at least one of the GAFP 1108 or field plate 116 is electrically connected to the source electrode 112, for example, through one or more conductive structures of at least one of a first set of vias, a first set of wires, a second set of vias, a second set of wires, a third set of vias, a third set of wires, or one or more other conductive structures.

[0150] In some systems, at least one of the first sidewall 1122, the second sidewall 1124, the third sidewall 1126, or the fourth sidewall 1128 is formed to have a foot defect, such as a protrusion extending horizontally from the sidewall 1207, which contributes to at least one of electric field congestion, an increase in electric field density (e.g., in the region between the foot defect and the drain electrode 114), electric field imbalance, etc. In some embodiments, forming at least one of the first sidewall 1122, the second sidewall 1124, the third sidewall 1126, or the fourth sidewall 1128 to have one or more characteristics disclosed herein (e.g., no foot defects at the bottom segment of the bottom layer of the GAFP 1108, such as the first GAFP electrode layer 1112) provides at least one of improved regulation or increased stability of the electric field in the semiconductor device 100, thereby providing at least one of the following: increased breakdown voltage of the semiconductor device 100, improved reliability of the semiconductor device 100, increased chip probe (CP) yield, reduced failure rate (e.g., less likely burn-out between the GAFP 1108 and the drain electrode 114), for example, at least in part due to the distance between the first sidewall 1122 and the drain electrode 114 of the GAFP 1108 along the y-axis (e.g., ... Figures 1 to 23The increased uniformity of the distance between the sidewall 1122 and the drain electrode 114 of the GAFP 1108, as shown in the figure, is in contrast to the implementation of a foot defect at the bottom of the first sidewall 1122, which results in a change in the distance between the sidewall 1122 and the drain electrode 114. This change leads to at least one of the following results: increased electric field congestion between the foot defect and the drain electrode 114, reduced breakdown voltage of the semiconductor device 100, reduced CP yield, reduced reliability, etc.

[0151] In some systems, the GAFP 1108 is formed with a bottom layer (e.g., a first GAFP electrode layer 1112) having a sidewall facing the drain electrode 114 and an extension angle less than a first threshold extension angle (e.g., 70 degrees), which adversely affects subsequent dielectric coverage (e.g., the coverage and / or contact of a fourth dielectric layer 1502 relative to the GAFP 1108). In some embodiments, forming the bottom layer of the GAFP 1108 (e.g., the first GAFP electrode layer 1112) with an extension angle 1217 greater than the first threshold extension angle (e.g., about 70 degrees) provides at least one of the following benefits: improved regulation or increased stability of the electric field in the semiconductor device 100, increased breakdown voltage of the semiconductor device 100, improved reliability of the semiconductor device 100, increased CP yield, and reduced failure rate (e.g., a lower likelihood of burn-out between the GAFP 1108 and the drain electrode 114).

[0152] In some systems, the GAFP 1108 is formed with a bottom layer (e.g., a first GAFP electrode layer 1112) having a sidewall facing the drain electrode 114 and an extension angle greater than a second threshold extension angle (e.g., 120 degrees), which adversely affects subsequent dielectric coverage (e.g., the coverage and / or contact of a fourth dielectric layer 1502 relative to the GAFP 1108). In some embodiments, forming the bottom layer of the GAFP 1108 (e.g., the first GAFP electrode layer 1112) with an extension angle 1217 greater than the second threshold extension angle (e.g., about 120 degrees) provides at least one of the following benefits: improved subsequent dielectric coverage in the semiconductor device 100, or improved regulation or increased stability of the electric field in the semiconductor device 100, increased breakdown voltage of the semiconductor device 100, improved reliability of the semiconductor device 100, increased CP yield, and reduced failure rate (e.g., a lower likelihood of burn-out between the GAFP 1108 and the drain electrode 114).

[0153] Embodiments are envisioned in which at least one of the gate electrode 1106 or GAFP 1108 is formed by a single electrode layer, two electrode layers, four electrode layers or other suitable number of electrode layers.

[0154] According to some embodiments, at least one of the following is important (e.g., critical): relative dimensions (e.g., the first thickness 1232 of the first byproduct 1220 on GAFP 1108 is greater than the second thickness 1234 of the second byproduct 1222 on the residual electrode layer 1224), etching techniques of the second etching process (e.g., one or more RF powers used in the second etching process, one or more etching process types associated with the etching operations and / or stages of the second etching process, one or more processing times associated with the etching operations and / or stages of the second etching process, etching chemicals used in the second etching process, etc.), or ratios and / or relationships between various etching operations and / or stages of the second etching operation and their RF powers, flow rate ratios, processing times, etc., because they contribute to achieving the desired sidewall profile of at least one of the first sidewall 1122, the second sidewall 1124, the third sidewall 1126, or the fourth sidewall 1128, which is at least in part, for example, due to the adequate protection of at least one of the first sidewall 1122, the second sidewall 1124, the third sidewall 1126, or the fourth sidewall 1128 in the second etching process.

[0155] In some embodiments, a method is provided. The method includes: forming an electrode layer over a first dielectric layer. The method includes: performing a first etch operation to pattern the electrode layer and form a gate electrode, a gate field plate (GAFP), a residual electrode layer adjacent to the GAFP and overlying the first dielectric layer, a first byproduct on the GAFP, and a second byproduct on the residual electrode layer. The method includes: performing a second etch operation to remove the second byproduct from the residual electrode layer and remove a first portion of the first byproduct, wherein a second portion of the first byproduct remains on the GAFP after the second etch operation. The method includes: performing a third etch operation to remove the residual electrode layer.

[0156] In some embodiments, the method includes: forming a drain electrode, and forming a second dielectric layer on the GAFP, wherein a portion of the second dielectric layer is between the GAFP and the drain electrode.

[0157] In some embodiments, performing a third etching operation includes: performing a first etching stage to remove a residual electrode layer, thereby exposing a portion of a first dielectric layer, wherein a second portion of a certain amount of a first byproduct remains on the GAFP after the first etching stage, and performing a second etching stage to remove the second portion of the certain amount of the first byproduct.

[0158] In some embodiments, performing the second etching stage includes removing a portion of the first dielectric layer.

[0159] In some embodiments, performing the first etching operation includes performing a first etching operation such that the first thickness of the first byproduct on the GAFP is greater than the second thickness of the second byproduct on the residual electrode layer.

[0160] In some embodiments, the method includes forming a mask layer over an electrode layer, wherein at least one of performing a first etching operation, performing a second etching operation, or performing a third etching operation is performed using the mask layer.

[0161] In some embodiments, at least one of the first byproduct or the second byproduct includes at least one of the following: residue from the mask layer, residue from the electrode layer, residue from the etching gas used in the first etching operation, residue from the etching tool used in the first etching operation, or one or more products of one or more chemical reactions caused by the first etching operation.

[0162] In some embodiments, forming an electrode layer includes forming a first layer over a first dielectric layer and forming a second layer over the first layer.

[0163] In some embodiments, performing a first etching operation includes: patterning a second layer to form a first GAFP electrode layer, and removing a first portion of the first layer to form a first portion of a second GAFP electrode layer beneath the first GAFP electrode layer. Performing a third etching operation includes: removing a residual electrode layer to form a second portion of a second GAFP electrode layer beneath the first portion of the second GAFP electrode layer, the residual electrode layer being the second portion of the first layer beneath the first portion of the first layer. The sidewalls of the GAFP include a first sidewall of the first GAFP electrode layer, a second sidewall of the first portion of the second GAFP electrode layer, and a third sidewall of the second portion of the second GAFP electrode layer.

[0164] In some embodiments, at least one of the following conditions is met: performing the first etching operation includes performing the first etching operation such that at least one of the first sidewall or the second sidewall is tapered; or performing the third etching operation includes performing the third etching operation such that the third sidewall is tapered.

[0165] In some embodiments, at least one of the following conditions is met: performing the first etching operation includes performing the first etching operation such that the first extension angle of the first sidewall relative to the surface of the first dielectric layer is between about 50 degrees and about 130 degrees; or performing the third etching operation includes performing the third etching operation such that the second extension angle of the third sidewall relative to the surface of the first dielectric layer is at least about 70 degrees.

[0166] In some embodiments, a semiconductor device is provided. The semiconductor device includes a substrate, a source electrode on the substrate, a drain electrode on the substrate, a gate electrode between the source and drain electrodes, and a multilayer gate field plate (GAFP) including a bottom layer having a sidewall adjacent to the drain electrode. The entire bottom section of the sidewall extends at an angle between about 50 degrees and about 130 degrees relative to the surface of the substrate, wherein the bottom section of the sidewall spans at least about 25% of the vertical extent of the bottom layer.

[0167] In some embodiments, the semiconductor device includes a gallium nitride layer between a substrate and at least one of a source electrode, a drain electrode, a gate electrode, or a multilayer GAFP.

[0168] In some embodiments, a multilayer GAFP includes a second layer above the bottom layer.

[0169] In some embodiments, the bottom layer comprises titanium nitride, and the second layer comprises aluminum copper.

[0170] In some embodiments, a multilayer GAFP includes a third layer above the second layer.

[0171] In some embodiments, the third layer comprises titanium nitride.

[0172] In some embodiments, a method is provided. The method includes: performing a first etching operation to pattern an electrode layer over a first dielectric layer and forming a gate electrode, a gate field plate (GAFP), a residual electrode layer adjacent to the GAFP and overlying the first dielectric layer, a first byproduct on the sidewall of the GAFP, and a second byproduct on the surface of the residual electrode layer. The method includes: performing a second etching operation to remove the second byproduct from the surface of the residual electrode layer and remove a first portion of the first byproduct, wherein a second portion of the first byproduct remains on the sidewall of the GAFP after the second etching operation. The method includes: performing a third etching operation to remove the residual electrode layer.

[0173] In some embodiments, performing a first etching operation includes applying a first radio frequency (RF) power to generate a first plasma, and performing a second etching operation includes applying a second RF power to generate a second plasma, wherein the second RF power is less than the first RF power.

[0174] In some embodiments, performing a third etching operation includes applying a third RF power to generate a third plasma, wherein the third RF power is less than the first RF power.

[0175] Although the subject matter has been described in language specific to structural features or methodological actions, it is to be understood that the subject matter of the appended claims is not necessarily limited to the specific features or actions described above. Rather, the specific features and actions described above are disclosed as exemplary forms for implementing at least some of the claims.

[0176] This document provides various operations for the embodiments. The order in which some or all of the operations are described should not be construed as implying that these operations are necessarily sequentially related. It will be understood that alternative orderings have the benefit of this specification. Furthermore, it should be understood that not all operations must exist in every embodiment provided herein. Additionally, it should be understood that in some embodiments, not all operations are necessary.

[0177] It should be understood that, for example, for the purposes of simplicity and ease of understanding, the layers, features, elements, etc., described herein are shown in specific dimensions (e.g., structural dimensions or orientations) relative to each other, and in some embodiments, their actual dimensions are substantially different from those shown herein. Furthermore, there are various techniques available for forming the layers, regions, features, elements, etc., mentioned herein, such as at least one of etching, planarization, implantation, doping, spin coating, sputtering, growth, or deposition techniques (e.g., chemical vapor deposition (CVD)).

[0178] Furthermore, the use of terms such as "exemplary" herein to indicate that something is used as an example, instance, illustration, etc., is not necessarily advantageous. As used in this application, "or" is intended to mean an inclusive "or" rather than an exclusive "or." Additionally, unless otherwise stated or clearly indicated from the context to refer to the singular form, "a" and "an" as used in this application and the appended claims are generally interpreted as meaning "one or more." Furthermore, at least one of A and B and / or the like generally refers to A or B or both A and B. Moreover, in the extent to which "comprising," "having," "having," "with," or variations thereof are used, such terms are intended to be inclusive in a manner similar to the term "comprising." Furthermore, unless otherwise stated, "first," "second," etc., are not intended to imply temporal, spatial, or sequential aspects. Rather, these terms are used only as identifiers, names, etc., of features, elements, items, etc. For example, a first element and a second element generally correspond to element A and element B, or two different or two similar elements, or the same element.

[0179] Furthermore, although this disclosure has been shown and described with respect to one or more implementations, equivalent changes and modifications will occur to those skilled in the art upon reading and understanding of this specification and the accompanying drawings. This disclosure includes all such modifications and variations and is limited only by the scope of the appended claims. In particular, for the various functions performed by the aforementioned components (e.g., elements, resources, etc.), unless otherwise stated, the terminology used to describe such components is intended to correspond to any component performing the specified function (e.g., functionally equivalent) of the described component, even if it is not structurally equivalent to the disclosed structure. Additionally, while specific features of this disclosure may have been disclosed only with respect to several implementations, such features may be combined with one or more other features of other implementations, which may be desirable and advantageous for any given or particular application.

[0180] Example 1 is a method of forming a semiconductor device, comprising: forming an electrode layer over a first dielectric layer; performing a first etch operation to pattern the electrode layer and form: a gate electrode; a gate field plate (GAFP); a residual electrode layer adjacent to the GAFP and overlying the first dielectric layer; a first byproduct on the GAFP; and a second byproduct on the residual electrode layer; performing a second etch operation to remove the second byproduct from the residual electrode layer and remove a first portion of the first byproduct, wherein a second portion of the first byproduct remains on the GAFP after the second etch operation; and performing a third etch operation to remove the residual electrode layer.

[0181] Example 2 is the method of Example 1, comprising: forming a drain electrode; and forming a second dielectric layer on the GAFP, wherein a portion of the second dielectric layer is between the GAFP and the drain electrode.

[0182] Example 3 is the method of Example 1, wherein performing the third etching operation includes: performing a first etching stage to remove the residual electrode layer, thereby exposing a portion of the first dielectric layer, wherein a second portion of a certain amount of the first by-product remains on the GAFP after the first etching stage; and performing a second etching stage to remove the second portion of the certain amount of the first by-product.

[0183] Example 4 is the method described in Example 3, wherein performing the second etching stage includes: removing the portion of the first dielectric layer.

[0184] Example 5 is the method of Example 1, wherein performing the first etching operation includes: performing the first etching operation such that the first thickness of the first byproduct on the GAFP is greater than the second thickness of the second byproduct on the residual electrode layer.

[0185] Example 6 is the method of Example 1, comprising: forming a mask layer over the electrode layer, wherein at least one of performing the first etching operation, performing the second etching operation, or performing the third etching operation is performed using the mask layer.

[0186] Example 7 is the method described in Example 6, wherein at least one of the first by-product or the second by-product includes at least one of the following: residue from the mask layer, residue from the electrode layer, residue from the etching gas used in the first etching operation, residue from the etching tool used in the first etching operation, or one or more products of one or more chemical reactions caused by the first etching operation.

[0187] Example 8 is the method described in Example 1, wherein forming the electrode layer includes: forming a first layer over the first dielectric layer; and forming a second layer over the first layer.

[0188] Example 9 is the method described in Example 8, wherein: performing the first etching operation includes: patterning the second layer to form a first GAFP electrode layer; and removing a first portion of the first layer to form a first portion of a second GAFP electrode layer below the first GAFP electrode layer; performing the third etching operation includes: removing the residual electrode layer to form a second portion of the second GAFP electrode layer below the first portion of the second GAFP electrode layer, the residual electrode layer including the second portion of the first layer below the first portion of the first layer; and the sidewalls of the GAFP include a first sidewall of the first GAFP electrode layer, a second sidewall of the first portion of the second GAFP electrode layer, and a third sidewall of the second portion of the second GAFP electrode layer.

[0189] Example 10 is the method of Example 9, wherein: performing the first etching operation includes: performing the first etching operation such that at least one of the first sidewall or the second sidewall is tapered; or performing the third etching operation includes: performing the third etching operation such that the third sidewall is tapered.

[0190] Example 11 is the method of Example 9, wherein: performing the first etching operation includes: performing the first etching operation such that a first extension angle of the first sidewall relative to the surface of the first dielectric layer is between about 50 degrees and about 130 degrees; or performing the third etching operation includes: performing the third etching operation such that a second extension angle of the third sidewall relative to the surface of the first dielectric layer is at least about 70 degrees.

[0191] Example 12 is a semiconductor device comprising: a substrate; a source electrode on the substrate; a drain electrode on the substrate; a gate electrode between the source electrode and the drain electrode; and a multilayer gate field plate (GAFP) including a bottom layer having a sidewall adjacent to the drain electrode, wherein the entire bottom section of the sidewall extends at an angle between about 50 degrees and about 130 degrees relative to the surface of the substrate, wherein the bottom section of the sidewall spans at least about 25% of the vertical extent of the bottom layer.

[0192] Example 13 is the semiconductor device described in Example 12, comprising: a gallium nitride layer between the substrate and at least one of the source electrode, the drain electrode, the gate electrode, or the multilayer GAFP.

[0193] Example 14 is the semiconductor device described in Example 12, wherein the multilayer GAFP includes a second layer on top of the bottom layer.

[0194] Example 15 is the semiconductor device described in Example 14, wherein: the bottom layer comprises titanium nitride; and the second layer comprises aluminum copper.

[0195] Example 16 is the semiconductor device described in Example 15, wherein the multilayer GAFP includes a third layer on top of the second layer.

[0196] Example 17 is the semiconductor device described in Example 16, wherein the third layer comprises titanium nitride.

[0197] Example 18 is a method of forming a semiconductor device, comprising: performing a first etching operation to pattern an electrode layer over a first dielectric layer and forming: a gate electrode; a gate field plate (GAFP); a residual electrode layer adjacent to the GAFP and overlying the first dielectric layer; a first byproduct on a sidewall of the GAFP; and a second byproduct on a surface of the residual electrode layer; performing a second etching operation to remove the second byproduct from the surface of the residual electrode layer and remove a first portion of the first byproduct, wherein a second portion of the first byproduct remains on the sidewall of the GAFP after the second etching operation; and performing a third etching operation to remove the residual electrode layer.

[0198] Example 19 is the method of Example 18, wherein: performing the first etching operation includes: applying a first radio frequency (RF) power to generate a first plasma; and performing the second etching operation includes: applying a second RF power to generate a second plasma, wherein the second RF power is less than the first RF power.

[0199] Example 20 is the method of Example 19, wherein performing the third etching operation includes: applying a third RF power to generate a third plasma, wherein the third RF power is less than the first RF power.

Claims

1. A method for forming a semiconductor device, comprising: An electrode layer is formed on top of the first dielectric layer; Perform a first etching operation to pattern the electrode layer and form: Gate electrode; Gate field plate (GAFP); A residual electrode layer is adjacent to the GAFP and overlying the first dielectric layer; The first byproduct is on the GAFP; as well as The second byproduct is on the residual electrode layer; A second etching operation is performed to remove the second byproduct from the residual electrode layer and remove a first portion of the first byproduct, wherein a second portion of the first byproduct remains on the GAFP after the second etching operation; as well as A third etching operation is performed to remove the residual electrode layer.

2. The method according to claim 1, comprising: Form the drain electrode; as well as A second dielectric layer is formed on the GAFP, wherein a portion of the second dielectric layer is between the GAFP and the drain electrode.

3. The method according to claim 1, wherein, Performing the third etching operation includes: A first etching stage is performed to remove the residual electrode layer, thereby exposing a portion of the first dielectric layer, wherein a certain amount of the second portion of the first byproduct remains on the GAFP after the first etching stage; and A second etching stage is performed to remove the second portion of the first byproduct.

4. The method according to claim 3, wherein, Performing the second etching stage includes: Remove the portion of the first dielectric layer.

5. The method according to claim 1, wherein, Performing the first etching operation includes: The first etching operation is performed such that the first thickness of the first byproduct on the GAFP is greater than the second thickness of the second byproduct on the residual electrode layer.

6. The method according to claim 1, comprising: A mask layer is formed on the electrode layer, wherein at least one of the first etching operation, the second etching operation, or the third etching operation is performed using the mask layer.

7. The method according to claim 6, wherein: At least one of the first by-product or the second by-product includes at least one of the following: residue from the mask layer, residue from the electrode layer, residue from the etching gas used in the first etching operation, residue from the etching tool used in the first etching operation, or one or more products of one or more chemical reactions caused by the first etching operation.

8. The method according to claim 1, wherein, Forming the electrode layer includes: A first layer is formed on top of the first dielectric layer; and A second layer is formed on top of the first layer.

9. A semiconductor device, comprising: Substrate; The source electrode is located on the substrate; The drain electrode is located on the substrate; A gate electrode is located between the source electrode and the drain electrode; as well as A multilayer gate field plate (GAFP) includes a substrate having a sidewall near the drain electrode, wherein the entire bottom section of the sidewall extends at an angle between 50 degrees and 130 degrees relative to the surface of the substrate, and wherein the bottom section of the sidewall spans at least 25% of the vertical extent of the substrate.

10. A method of forming a semiconductor device, comprising: Perform a first etching operation to pattern the electrode layer above the first dielectric layer, and form: Gate electrode; Gate field plate (GAFP); A residual electrode layer is adjacent to the GAFP and overlying the first dielectric layer; The first byproduct is on the sidewall of the GAFP; as well as The second byproduct is found on the surface of the residual electrode layer. A second etching operation is performed to remove the second byproduct from the surface of the residual electrode layer and remove a first portion of the first byproduct, wherein a second portion of the first byproduct remains on the sidewall of the GAFP after the second etching operation; as well as A third etching operation is performed to remove the residual electrode layer.

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