A silicon carbide power module for integrated packaging of air compressors and PTCs

Abstract

This invention discloses a silicon carbide power module for integrated packaging of an air compressor and a PTC (Power Transformer) circuit, comprising a copper-clad substrate, silicon carbide chips, an NTC resistor, a molding compound, and terminals. The copper-clad substrate houses the silicon carbide chips, NTC resistor, and terminals, providing electrical connections and mechanical support. The molding compound tightly encapsulates the copper-clad substrate, as well as the silicon carbide chips, NTC resistor, and some terminals on the substrate, providing mechanical strength support and sealing the silicon carbide power module. The silicon carbide chips comprise nine chips, forming a three-phase bridge topology circuit for the air compressor controller and the PTC heating controller. This invention employs a compact design, eliminating unnecessary space.

Description

Technical Field

[0001] This invention relates to the field of power electronic device technology, and in particular to a silicon carbide power module for integrated packaging of air compressors and PTCs. Background Technology

[0002] The thermal management system of new energy vehicles has the following main uses: 1. The battery of the electric vehicle needs to be used within a temperature range of -30°C to 55°C. Too low a temperature will cause the battery's electrochemical insensitivity, and too high a temperature will cause the battery's performance to degrade; 2. The temperature of the electric vehicle's main drive motor needs to be controlled to not exceed 70°C - 80°C. Overheating of the motor will lead to a decrease in efficiency and a reduction in the vehicle's range; 3. The temperature inside the passenger car needs to be kept at a suitable temperature of 20°C to 30°C. Although different people have different tolerances to temperature, it is not suitable for people to stay in the passenger car for a long time if it is too hot or too cold.

[0003] In recent years, the thermal management systems of new energy vehicles (passenger cars) have been rapidly evolving, with the core hardware—the air conditioning compressor and the PTC heater—developing towards miniaturization and higher pressure. To achieve miniaturization of the core hardware, automakers have integrated the previously separate air compressor controller and PTC heater controller into a single, two-in-one controller. Compared to the original two controllers, this two-in-one controller allows for the sharing of some internal hardware components (such as high and low voltage connectors, PCB boards, high-voltage filter circuits, high-voltage interlock circuits, bus capacitors, low-voltage filter circuits, communication circuits, MCU chips, and bus voltage detection circuits), reducing the number of hardware components and significantly lowering costs.

[0004] Existing technologies use TO-247-4 packaged IGBTs to manufacture integrated controllers. This approach currently has the following five problems: 1. The PTC-side IGBT is typically air-cooled and attached to the casing, resulting in poor heat dissipation; 2. Due to electrical insulation, the size of the integrated controller built with a single IGBT is difficult to further reduce; 3. The NTC resistor for detecting the junction temperature of the single IGBT is soldered onto the PCB board, which is far from the IGBT chip, leading to insufficient temperature detection sensitivity; 4. The circuit built with a single IGBT has a large parasitic inductance, resulting in a large controller area and making it prone to electromagnetic interference problems such as system resonance; 5. The single IGBT requires bending its leads during circuit construction, and the assembly process must also consider the electrical insulation of the fixing screws, making the entire assembly process quite complex. Summary of the Invention

[0005] Technical objective: To address the deficiencies in existing technologies, this invention provides a silicon carbide power module for integrated packaging of air compressors and PTCs. The PTC-side chip and the compressor-side chip are on the same ceramic copper-clad substrate, and the ceramic copper-clad substrate is directly attached to the refrigerant for heat dissipation. It adopts a compact design and eliminates unnecessary idle space.

[0006] Technical solution: To achieve the above technical objectives, the present invention adopts the following technical solution.

[0007] A silicon carbide power module for integrated packaging of an air compressor and a PTC (Power Transformer) includes a copper-clad substrate, silicon carbide chips, an NTC resistor, a molding compound, and terminals. The copper-clad substrate has silicon carbide chips, NTC resistors, and terminals disposed thereon, and serves to provide electrical connections and mechanical support. The molding compound tightly encapsulates the copper-clad substrate, as well as the silicon carbide chips, NTC resistors, and some terminals on the copper-clad substrate, to provide mechanical strength support and seal the silicon carbide power module. The silicon carbide chips include nine silicon carbide chips, which are used to form the circuits of the air compressor controller and the PTC heating controller in a three-phase bridge topology.

[0008] Preferably, the copper-clad substrate includes an upper conductive copper layer, an insulating ceramic plate, and a lower conductive copper layer, which are connected sequentially. The upper conductive copper layer provides electrical connection, and an insulating ceramic plate is disposed between the upper and lower conductive copper layers to achieve welding of the insulating ceramic plate.

[0009] Preferably, the upper conductive copper layer comprises several non-connected copper layers; each copper layer is provided with a silicon carbide chip or an NTC resistor, and each copper layer has a terminal lead-out.

[0010] Preferably, of the nine silicon carbide chips, six silicon carbide chips are used to form a three-phase bridge topology air compressor controller circuit to realize the compressor cooling function; three silicon carbide chips are used to form a PTC heating controller circuit to realize the PTC heating function; in the PTC heating controller circuit, one silicon carbide chip is used as the upper tube of the PTC heating controller for protection, and two silicon carbide chips are used as the lower tubes of the PTC heating controller to control one PTC resistor respectively.

[0011] Preferably, the three upper bridge chips in the air compressor controller circuit and the silicon carbide chip used as the upper tube of the PTC heating controller in the PTC heating controller circuit share a common drain and reuse a single terminal; each of the three intermediate phases in the air compressor controller circuit reuses a single power terminal.

[0012] Preferably, the NTC resistor includes two NTC resistors located at both ends of the upper conductive copper foil, used to detect the junction temperature of the silicon carbide chip in the air compressor controller circuit and the PTC heating controller circuit.

[0013] Preferably, the terminals include twelve power terminals and nineteen signal terminals; the twelve power terminals are the source or drain of the silicon carbide chip, and the nineteen signal terminals are the control terminals of the Kelvin source, gate, or NTC resistor of the silicon carbide chip.

[0014] Preferably, the dimensions of the injection molded body are 62mm×30mm×8mm, and the dimensions of the silicon carbide chip are less than or equal to 3.2mm*4.7mm.

[0015] Beneficial effects: In this invention, the PTC-side chip and the compressor-side chip are on the same ceramic copper-clad substrate, and the refrigerant is directly attached to the ceramic copper-clad substrate for heat dissipation; this invention adopts a compact design and there is no unnecessary idle space. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the copper-clad substrate structure according to an embodiment of the present invention; Figure 2 for Figure 1 Schematic diagram of the front structure of the copper-clad substrate; Figure 3 This is a schematic diagram of a silicon carbide chip and an NTC resistor structure on a copper-clad substrate. Figure 4 This is a schematic diagram of the terminal structure on a copper-clad substrate; Figure 5 This is a schematic diagram of the pin connections for a copper-clad laminate. Figure 6 This is a schematic diagram of the circuit structure of a silicon carbide power module used in an integrated package for air compressors and PTCs. Figure 7 for Figure 6 Schematic diagram of the PTC side circuit structure; Figure 8 This is a schematic diagram of a silicon carbide power module structure for integrated packaging of an air compressor and a PTC according to an embodiment of the present invention; Among them, 11. Upper conductive copper foil, 12. Insulating ceramic plate, 13. Lower conductive copper foil; 111. First copper layer, 112. Second copper layer, 113. Third copper layer, 114. Fourth copper layer, 115. Fifth copper layer, 116. Sixth copper layer, 117. Seventh copper layer, 118. Eighth copper layer, 119. Ninth copper layer, 1110. Tenth copper layer, 1111. Eleventh copper layer, 1112. Twelfth copper layer, 1113. Thirteenth copper layer, 1114. Fourteenth copper layer, 1115. Fifteenth copper layer, 1116. Sixteenth copper layer, 1120. Twentieth copper layer, 1121. Twenty-first copper layer. Layers; 1122, Twenty-second copper layer; 1123, Twenty-third copper layer; 1124, Twenty-fourth copper layer; 1125, Twenty-fifth copper layer; 1126, Twenty-sixth copper layer; 1127, Twenty-seventh copper layer; 1128, Twenty-eighth copper layer; 1129, Twenty-ninth copper layer; 1130, Thirtieth copper layer; 1131, Thirty-first copper layer; 1132, Thirty-second copper layer; 21, First silicon carbide chip; 22, Second silicon carbide chip; 23, Third silicon carbide chip; 24, Fourth silicon carbide chip; 25, Fifth silicon carbide chip; 26, Sixth silicon carbide chip; 27, Seventh silicon carbide chip; 2 8. Eighth silicon carbide chip; 29. ​​Ninth silicon carbide chip; 31. First NTC resistor; 32. Second NTC resistor; 4. Molded package; 501. First power terminal; 502. Second power terminal; 503. Third power terminal; 504. Fourth power terminal; 505. Fifth power terminal; 506. Sixth power terminal; 507. Seventh power terminal; 508. Eighth power terminal; 509. Ninth power terminal; 510. Tenth power terminal; 511. Eleventh power terminal; 512. Twelfth power terminal; 513. Thirteenth signal terminal; 514. Fourteenth signal terminal; 515. 516, 517, 518, 519, 510, 520, 521, 522, 523, 524, 525, 526, 527, 528, 529, 530, 531, 522, 523, 524, 525, 526, 527, 528, 529, 530, 531, 522, 522, 523, 524, 525, 526, 527, 528, 529, 520, 521, 522, 522, 523, 524, 525, 526, 527, 528, 529 ...2, 522, 523, 524, 525, 522, 522, 523, 524, 525, 522, 522, 523, 524, 525, 522, 522, 523, 524, 525, 522, 522, 523, Detailed Implementation

[0017] The present invention will be further explained and described below with reference to the accompanying drawings and embodiments.

[0018] The embodiments are for illustrative purposes only and do not constitute a limitation on the scope of the claims. Other alternative means that can be conceived by those skilled in the art are all within the scope of the claims of this invention.

[0019] Furthermore, in the description of this invention, it should be noted that the terms "central," "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0020] Example: As attached Figure 8 As shown, this embodiment of a silicon carbide power module for air compressor and PTC integrated packaging, as a DIP31 module, includes a copper-clad substrate, a silicon carbide chip, an NTC resistor, a molding compound 4, and terminals; the dimensions of the injection molded body are 62mm × 30mm × 8mm.

[0021] The copper-clad substrate is provided with a silicon carbide chip, an NTC resistor, and terminals. The copper-clad substrate provides electrical connections and mechanical support. The molding compound 4 tightly encapsulates the copper-clad substrate, the silicon carbide chip, the NTC resistor, and some terminals on the copper-clad substrate, providing mechanical strength support and sealing the silicon carbide power module. The silicon carbide chip is a 1200V 20mΩ chip, a 1200V 40mΩ chip, or a 1500V 40mΩ chip, with a size not exceeding 3.2mm*4.7mm. When using a 1200V 20mΩ chip, the size is 3.2mm*4.7mm; when using a 1200V 40mΩ chip, the size is 2.9mm*3.0mm; and when using a 2400V 40mΩ chip, the size is 2.9mm*3.9mm. The NTC resistor is selected according to the actual situation; in this embodiment, a surface-mount wire-bonded 10kΩ resistor is used.

[0022] As attached Figure 1 As shown, the copper-clad substrate is a ceramic copper-clad substrate, including an upper conductive copper foil 11, an insulating ceramic plate 12, and a lower conductive copper foil 13. The upper conductive copper foil 11, the insulating ceramic plate 12, and the lower conductive copper foil 13 are connected in sequence. The upper conductive copper foil 11 is used to provide electrical connection. An insulating ceramic plate 12 is disposed between the upper conductive copper foil 11 and the lower conductive copper foil 13 to realize the welding of the insulating ceramic plate 12. At the same time, the present invention encapsulates the insulating ceramic plate 12 in the power module, so that the ceramic copper-clad substrate of the power module of the present invention can be directly attached to the refrigerant for heat dissipation.

[0023] As attached Figure 2 - Appendix Figure 7As shown, the upper conductive copper layer 11 comprises several non-connected copper layers; each copper layer has a silicon carbide chip or an NTC resistor, and each copper layer has a terminal lead; the silicon carbide chip comprises nine silicon carbide chips, of which six silicon carbide chips are used to form a three-phase bridge topology air compressor controller circuit to realize the compressor cooling function; three silicon carbide chips are used to form a PTC heating controller circuit to realize the PTC heating function; in the PTC heating controller circuit, one silicon carbide chip is used as the upper transistor of the PTC heating controller for protection, and two silicon carbide chips are used as the lower transistors of the PTC heating controller, each controlling a PTC resistor. The silicon carbide chip corresponding to the upper bridge in the air compressor controller circuit and the silicon carbide chip corresponding to the upper transistor in the PTC heating controller circuit share a common drain, which reduces one power terminal in the entire power module, realizing a compact design of the module. Since the air compressor controller circuit and the PTC heating controller circuit implement the cooling and heating functions respectively, they will not be used simultaneously. Therefore, in the case of common drain, the silicon carbide chip can be controlled through other terminals. In other words, the present invention will not affect the overall circuit function while reducing the number of terminals.

[0024] The NTC resistor consists of two NTC resistors located at both ends of the upper conductive copper foil 11. It is used to detect the junction temperature of the silicon carbide chip in the air compressor controller circuit and the PTC heating controller circuit. In actual use, it is necessary to detect the junction temperature of the power chip during operation to ensure that the motor works normally. If the temperature is too high, it will change the control signal for safety. The NTC resistance decreases as the temperature increases. Generally, a 10kΩ NTC resistor is used to balance accuracy and cost.

[0025] The terminals include twelve power terminals and nineteen signal terminals; the twelve power terminals are the source or drain terminals of the silicon carbide chip, and the nineteen signal terminals are the control terminals of the Kelvin source, gate, or NTC resistor of the silicon carbide chip.

[0026] In this embodiment, the upper conductive copper layer 11 includes a first copper layer 111, a second copper layer 112, a third copper layer 113, a fourth copper layer 114, a fifth copper layer 115, a sixth copper layer 116, a seventh copper layer 117, an eighth copper layer 118, a ninth copper layer 119, a tenth copper layer 1110, an eleventh copper layer 1111, a twelfth copper layer 1112, a thirteenth copper layer 1113, a fourteenth copper layer 1114, a fifteenth copper layer 1115, and a tenth copper layer 1116. Sixth copper layer 1116, twentieth copper layer 1120, twenty-first copper layer 1121, twenty-second copper layer 1122, twenty-third copper layer 1123, twenty-fourth copper layer 1124, twenty-fifth copper layer 1125, twenty-sixth copper layer 1126, twenty-seventh copper layer 1127, twenty-eighth copper layer 1128, twenty-ninth copper layer 1129, thirtieth copper layer 1130, thirty-first copper layer 1131, thirty-second copper layer 1132; The silicon carbide chips include a first silicon carbide chip 21, a second silicon carbide chip 22, a third silicon carbide chip 23, a fourth silicon carbide chip 24, a fifth silicon carbide chip 25, a sixth silicon carbide chip 26, a seventh silicon carbide chip 27, an eighth silicon carbide chip 28, and a ninth silicon carbide chip 29. The first silicon carbide chip 21 is disposed on the second copper layer 112, the second silicon carbide chip 22 is disposed on the seventh copper layer 117, the third silicon carbide chip 23, the fourth silicon carbide chip 24, the fifth silicon carbide chip 25, and the sixth silicon carbide chip 26 are disposed on the ninth copper layer 119, the seventh silicon carbide chip 27 is disposed on the twentieth copper layer 1120, the eighth silicon carbide chip 28 is disposed on the twenty-first copper layer 1121, and the ninth silicon carbide chip 29 is disposed on the twenty-second copper layer 1122. All silicon carbide chips are soldered and fixed to the upper conductive copper layer 11 using Pb92.5Sn5Ag2.5 solder. The third silicon carbide chip 23, the fourth silicon carbide chip 24, the fifth silicon carbide chip 25, and the sixth silicon carbide chip 26 are all disposed together on the ninth copper layer 119, which facilitates the common connection of drains, thereby reducing one drain pin and making the power module smaller.

[0027] The NTC resistors include a first NTC resistor 31 and a second NTC resistor 32; the first NTC resistor 31 is disposed on the third copper layer 113, and the second NTC resistor 32 is disposed on the thirtieth copper layer 1132; all NTC resistors are soldered and fixed to the upper conductive copper layer 11 by Pb92.5Sn5Ag2.5 solder.

[0028] The power terminals include a first power terminal 501, a second power terminal 502, a third power terminal 503, a fourth power terminal 504, a fifth power terminal 505, a sixth power terminal 506, a seventh power terminal 507, an eighth power terminal 508, a ninth power terminal 509, a tenth power terminal 510, an eleventh power terminal 511, and a twelfth power terminal 512. The first power terminal 501 is positioned on and extends from the first copper layer 111; the second power terminal 502 is positioned on and extends from the second copper layer 112; the third power terminal 503 is positioned on and extends from the seventh copper layer 117; the fourth power terminal 504 is positioned on and extends from the eighth copper layer 118; the fifth power terminal 505 is positioned on and extends from the ninth copper layer 119; and the sixth power terminal 506... The seventh power terminal 507 is located on the twentieth copper layer 1120 and leads out from the twentieth copper layer 1120; the eighth power terminal 508 is located on the twentieth copper layer 1122 and leads out from the twentieth copper layer 1122; the ninth power terminal 509 is located on the twentieth copper layer 1123 and leads out from the twentieth copper layer 1123; the tenth power terminal 510 is located on the twentieth copper layer 1124 and leads out from the twentieth copper layer 1124; the eleventh power terminal 511 is located on the twentieth copper layer 1125 and leads out from the twentieth copper layer 1125; and the twelfth power terminal 512 is located on the fourth copper layer 114 and leads out from the fourth copper layer 114. All power terminals are soldered and fixed to the upper conductive copper layer 11 using Pb92.5Sn5Ag2.5 solder.

[0029] The signal terminals include the thirteenth signal terminal 513, the fourteenth signal terminal 514, the fifteenth signal terminal 515, the sixteenth signal terminal 516, the seventeenth signal terminal 517, the eighteenth signal terminal 518, the nineteenth signal terminal 519, the twentieth signal terminal 520, the twenty-first signal terminal 521, the twenty-second signal terminal 522, the twenty-third signal terminal 523, the twenty-fourth signal terminal 524, the twenty-fifth signal terminal 525, the twenty-sixth signal terminal 526, the twenty-seventh signal terminal 527, the twenty-eighth signal terminal 528, the twenty-ninth signal terminal 529, and the thirtieth signal terminal 520. Signal terminals 530, 531, and 513 are positioned on and led out from the fifth copper layer 115; signal terminal 519 is positioned on and led out from the twelfth copper layer 1112; signal terminal 531 is positioned on and led out from the thirteenth copper layer 1132; and signal terminals 513, 519, and 531 are fixed to the upper conductive copper layer 11 by soldering with Pb92.5Sn5Ag2.5 solder.

[0030] Signal terminals 514, 515, 516, 517, 518, 520, 521, 522, 523, 524, 525, 526, 527, 528, 529, and 530 are suspended above the copper-clad substrate.

[0031] In this embodiment, since the first silicon carbide chip 21 is disposed on the second copper layer 112, the second power terminal 502 is positioned on the second copper layer 112 and led out from the second copper layer 112, and the second power terminal 502 serves as the drain terminal of the first silicon carbide chip 21; the first silicon carbide chip 21 is connected to the first copper layer 111 through four 15mil aluminum wires, and since the first power terminal 501 is positioned on the first copper layer 111 and led out from the first copper layer 111, the first power terminal 501 serves as the source terminal of the first silicon carbide chip 21; the first silicon carbide chip 21 is connected to the sixth copper layer 116 through one 5mil aluminum wire, and the sixth copper layer 116 is connected to the fifteenth signal terminal 515 through one 15mil aluminum wire, and the fifteenth signal terminal 515 serves as the gate terminal of the first silicon carbide chip 21.

[0032] Since the second silicon carbide chip 22 is disposed on the seventh copper layer 117, the third power terminal 503 is positioned on the seventh copper layer 117 and led out from the seventh copper layer 117, and the third power terminal 503 serves as the drain terminal of the second silicon carbide chip 22; the second silicon carbide chip 22 is connected to the fourth copper layer 114 through four 15mil aluminum wires, and since the twelfth power terminal 512 is positioned on the fourth copper layer 114 and led out from the fourth copper layer 114, the twelfth power terminal 512 serves as the source terminal of the second silicon carbide chip 22; the second silicon carbide chip 22 is connected to the sixteenth signal terminal 516 through one 5mil aluminum wire, and the sixteenth signal terminal 516 serves as the gate terminal of the second silicon carbide chip 22.

[0033] Since the third silicon carbide chip 23 is disposed on the ninth copper layer 119, the fifth power terminal 505 is positioned on the ninth copper layer 119 and led out from the ninth copper layer 119, and the fifth power terminal 505 serves as the drain terminal of the third silicon carbide chip 23; since the third silicon carbide chip 23 is connected to the eighth copper layer 118 through four 15mil aluminum wires, the fourth power terminal 504 is positioned on the eighth copper layer 118 and led out from the eighth copper layer 118, and the fourth power terminal 504 serves as the source terminal of the third silicon carbide chip 23; since the third silicon carbide chip 23 is connected to the tenth copper layer 1110 through one 5mil aluminum wire, the tenth copper layer 1110 is connected to the seventeenth signal terminal 517 through one 15mil aluminum wire, and the seventeenth signal terminal 517 serves as the gate terminal of the third silicon carbide chip 23.

[0034] Since the fourth silicon carbide chip 24 is disposed on the ninth copper layer 119, the fifth power terminal 505 is positioned on and led out from the ninth copper layer 119, serving as the drain terminal of the fourth silicon carbide chip 24; since the fourth silicon carbide chip 24 is connected to the twentieth copper layer 1120 via four 15mil aluminum wires, the sixth power terminal 506 is positioned on and led out from the twentieth copper layer 1120, serving as the source terminal of the fourth silicon carbide chip 24; since the fourth silicon carbide chip 24 is disposed on the ninth copper layer 119, the fifth power terminal 505 ... ninth copper layer 119, serving as the source terminal of the fourth silicon carbide chip 24; since the fourth silicon carbide chip 24 is disposed on the ninth copper layer 119, the fifth power terminal 505 is positioned on and led out from the ninth copper layer 119, serving as the drain terminal of the fourth silicon carbide chip 24; since the fourth silicon carbide chip 24 is disposed on the ninth copper layer 119, the fifth power terminal 505 is positioned on and led out from the ninth copper layer 119, serving as the source terminal of the fourth silicon carbide chip 24; since the fourth silicon carbide chip 24 is disposed on the ninth copper layer 119, the fifth power terminal 505 is positioned on and led out from the ninth copper layer 119, serving as the source terminal of the fourth silicon carbide chip 24; since the fourth silicon carbide chip 24 is disposed on the ninth copper layer 119, the fifth power terminal 505 is positioned on and led out from the Chip 24 is connected to the eleventh copper layer 1111 via a 5mil aluminum wire. The eleventh copper layer 1111 is connected to the eighteenth signal terminal 518 via a 15mil aluminum wire. The eighteenth signal terminal 518 serves as the Kelvin source of the fourth silicon carbide chip 24. Since the fourth silicon carbide chip 24 is connected to the twelfth copper layer 1112 via a 5mil aluminum wire, the nineteenth signal terminal 519 is located on the twelfth copper layer 1112 and is led out from the twelfth copper layer 1112. The nineteenth signal terminal 519 serves as the gate terminal of the fourth silicon carbide chip 24.

[0035] Since the fifth silicon carbide chip 25 is disposed on the ninth copper layer 119, the fifth power terminal 505 is positioned on and led out from the ninth copper layer 119, serving as the drain terminal of the fifth silicon carbide chip 25; since the fifth silicon carbide chip 25 is connected to the twenty-first copper layer 1121 via four 15mil aluminum wires, the seventh power terminal 507 is positioned on and led out from the twenty-first copper layer 1121, serving as the source terminal of the fifth silicon carbide chip 25; since the fifth silicon carbide chip 25 is disposed on the ninth copper layer 119, the fifth power terminal 505 is disposed on and led out from the twenty-first copper layer 1121, serving as the source terminal of the fifth silicon carbide chip 25; since the fifth silicon carbide chip 25 is disposed on the ninth copper layer 119, the fifth power terminal 505 is disposed on and led out from the ninth copper layer 119, serving as the drain terminal of the fifth silicon carbide chip 25; since the fifth silicon carbide chip 25 is disposed on the ninth copper layer 119, the fifth power terminal 50 ... The silicon carbide chip 25 is connected to the thirteenth copper layer 1113 via a 5mil aluminum wire. The thirteenth copper layer 1113 is connected to the twentieth signal terminal 520 via a 15mil aluminum wire. The twentieth signal terminal 520 serves as the Kelvin source terminal of the fifth silicon carbide chip 25. Since the fifth silicon carbide chip 25 is connected to the fourteenth copper layer 1114 via a 5mil aluminum wire, the fourteenth copper layer 1114 is connected to the twenty-first signal terminal 521 via a 15mil aluminum wire. The twenty-first signal terminal 521 serves as the gate terminal of the fifth silicon carbide chip 25.

[0036] Since the sixth silicon carbide chip 26 is disposed on the ninth copper layer 119, the fifth power terminal 505 is positioned on and led out from the ninth copper layer 119, serving as the drain terminal of the sixth silicon carbide chip 26; since the sixth silicon carbide chip 26 is connected to the twenty-second copper layer 1122 via four 15mil aluminum wires, the eighth power terminal 508 is positioned on and led out from the twenty-second copper layer 1122, serving as the source terminal of the sixth silicon carbide chip 26; since the sixth silicon carbide chip 26 is disposed on the ninth copper layer 119, the fifth power terminal 505 is positioned on and led out from the twenty-second copper layer 1122, serving as the source terminal of the sixth silicon carbide chip 26; since the sixth silicon carbide chip 26 is disposed on the ninth copper layer 119, the fifth power terminal 505 is positioned on and led out from the ninth copper layer 119, serving as the drain ... The silicon chip 26 is connected to the fifteenth copper layer 1115 via a 5mil aluminum wire. The fifteenth copper layer 1115 is connected to the twenty-second signal terminal 522 via a 15mil aluminum wire. The twenty-second signal terminal 522 serves as the Kelvin source terminal of the sixth silicon carbide chip 26. Since the sixth silicon carbide chip 26 is connected to the sixteenth copper layer 1116 via a 5mil aluminum wire, the sixteenth copper layer 1116 is connected to the twenty-third signal terminal 523 via a 15mil aluminum wire. The twenty-third signal terminal 523 serves as the gate terminal of the sixth silicon carbide chip 26.

[0037] Since the seventh silicon carbide chip 27 is disposed on the twentieth copper layer 1120, the sixth power terminal 506 is positioned on and led out from the twentieth copper layer 1120, and the sixth power terminal 506 serves as the drain terminal of the seventh silicon carbide chip 27; since the seventh silicon carbide chip 27 is connected to the twentieth copper layer 1123 through four 15mil aluminum wires, the ninth power terminal 509 is positioned on and led out from the twentieth copper layer 1123, and the ninth power terminal 509 serves as the source terminal of the seventh silicon carbide chip 27; since the seventh silicon carbide chip 27 is disposed on the twentieth copper layer 1120, the sixth power terminal 506 serves as the drain ... The silicon carbide chip 27 is connected to the twenty-sixth copper layer 1126 via a 5mil aluminum wire. The twenty-sixth copper layer 1126 is connected to the twenty-fourth signal terminal 524 via a 15mil aluminum wire. The twenty-fourth signal terminal 524 serves as the Kelvin source terminal of the seventh silicon carbide chip 27. Since the seventh silicon carbide chip 27 is connected to the twenty-seventh copper layer 1127 via a 5mil aluminum wire, the twenty-seventh copper layer 1127 is connected to the twenty-fifth signal terminal 525 via a 15mil aluminum wire. The twenty-fifth signal terminal 525 serves as the gate terminal of the seventh silicon carbide chip 27.

[0038] Since the eighth silicon carbide chip 28 is disposed on the twenty-first copper layer 1121, the seventh power terminal 507 is positioned on and led out from the twenty-first copper layer 1121, and the seventh power terminal 507 serves as the drain terminal of the eighth silicon carbide chip 28; since the eighth silicon carbide chip 28 is connected to the twenty-fourth copper layer 1124 through four 15mil aluminum wires, the tenth power terminal 510 is positioned on and led out from the twenty-fourth copper layer 1124, and the tenth power terminal 510 serves as the source terminal of the eighth silicon carbide chip 28; since the... The eighth silicon carbide chip 28 is connected to the twenty-eighth copper layer 1128 via a 5mil aluminum wire. The twenty-eighth copper layer 1128 is connected to the twenty-sixth signal terminal 526 via a 15mil aluminum wire. The twenty-sixth signal terminal 526 serves as the Kelvin source terminal of the eighth silicon carbide chip 28. Since the eighth silicon carbide chip 28 is connected to the twenty-ninth copper layer 1129 via a 5mil aluminum wire, the twenty-ninth copper layer 1129 is connected to the twenty-seventh signal terminal 527 via a 15mil aluminum wire. The twenty-seventh signal terminal 527 serves as the gate terminal of the eighth silicon carbide chip 28.

[0039] Since the ninth silicon carbide chip 29 is disposed on the twenty-second copper layer 1122, the eighth power terminal 508 is positioned on and led out from the twenty-second copper layer 1122; the eighth power terminal 508 serves as the drain terminal of the ninth silicon carbide chip 29; since the ninth silicon carbide chip 29 is connected to the twenty-fifth copper layer 1125 through four 15mil aluminum wires; the eleventh power terminal 511 is positioned on and led out from the twenty-fifth copper layer 1125, and the eleventh power terminal 511 serves as the source terminal of the ninth silicon carbide chip 29; The ninth silicon carbide chip 29 is connected to the thirtieth copper layer 1130 via a 5mil aluminum wire. The thirtieth copper layer 1130 is connected to the twenty-eighth signal terminal 528 via a 15mil aluminum wire. The twenty-eighth signal terminal 528 serves as the Kelvin source terminal of the ninth silicon carbide chip 29. The ninth silicon carbide chip 29 is connected to the thirty-first copper layer 1131 via a 5mil aluminum wire. The thirty-first copper layer 1131 is connected to the twenty-ninth signal terminal 529 via a 15mil aluminum wire. The twenty-ninth signal terminal 529 serves as the gate terminal of the ninth silicon carbide chip 29.

[0040] As attached Figure 6 As shown, the three upper-bridge chips in the air compressor controller circuit, namely the fourth silicon carbide chip 24, the fifth silicon carbide chip 25, and the sixth silicon carbide chip 26, and the silicon carbide chip used as the upper tube of the PTC heating controller circuit, namely the third silicon carbide chip 23, share a common drain and reuse the fifth power terminal 505. The three intermediate phases in the air compressor controller circuit also each reuse a power terminal. For example, in the single-phase upper and lower bridge circuit composed of the fourth silicon carbide chip 24 and the seventh silicon carbide chip 27, the source of the fourth silicon carbide chip 24 is connected to the drain of the seventh silicon carbide chip 27, and the sixth power terminal 506 is reused as an intermediate phase; similarly, the seventh power terminal 507 and the eighth power terminal 508 also serve as intermediate phases.

[0041] In this embodiment, since the first NTC resistor 31 is disposed on the third copper layer 113, the third copper layer 113 and the fifth copper layer 115 are connected by a 15mil aluminum wire, the thirteenth signal terminal 513 is positioned on the fifth copper layer 115 and led out from the fifth copper layer 115, the thirteenth signal terminal 513 serves as one of the control terminals of the first NTC resistor 31; since the first NTC resistor 31 is connected to the fourteenth signal terminal 514 by a 5mil aluminum wire, the fourteenth signal terminal 514 serves as one of the control terminals of the first NTC resistor 31.

[0042] Since the second NTC resistor 32 is disposed on the thirty-second copper layer 1132, and the thirty-first signal terminal 531 is positioned on and led out from the thirty-second copper layer 1132, the thirty-first signal terminal 531 serves as one of the control terminals of the second NTC resistor 32. Since the second NTC resistor 32 is connected to the thirtieth signal terminal 530 via a 5mil aluminum wire, the thirtieth signal terminal 530 serves as one of the control terminals of the second NTC resistor 32. In other words, the thirtieth signal terminal 530 and the thirty-first signal terminal 531 at the thirty-second copper layer 1132 serve as two control terminals of the second NTC resistor 32.

[0043] In this embodiment, the first power terminal 501, the second power terminal 502, the third power terminal 503, the fourth power terminal 504, the fifth power terminal 505, the sixth power terminal 506, the seventh power terminal 507, the eighth power terminal 508, the ninth power terminal 509, the tenth power terminal 510, the eleventh power terminal 511, the twelfth power terminal 512, the thirteenth signal terminal 513, and the thirty-first signal terminal 531 are connected to the upper conductive copper foil 11, and the terminals below the bend are completely encapsulated in the plastic encapsulation 4.

[0044] This invention discloses a silicon carbide power module for integrated packaging of air compressors and PTC, used to replace single tubes in TO-247-4 packages, and manufactured as a two-in-one thermal management controller for new energy vehicles. The DIP31 module solves five problems mentioned in the prior art: 1. Within the DIP31 module, the PTC-side chips (i.e., the first silicon carbide chip 21, the second silicon carbide chip 22, and the third silicon carbide chip 23) and the compressor-side chips (i.e., the fourth silicon carbide chip 24, the fifth silicon carbide chip 25, the sixth silicon carbide chip 26, the seventh silicon carbide chip 27, the eighth silicon carbide chip 28, and the ninth silicon carbide chip 29) are on the same copper-clad ceramic substrate. The copper-clad ceramic substrate directly contacts the refrigerant for heat dissipation. Compared to the prior art single-tube solution where thermal grease is applied under the PTC-side single tube, followed by a ceramic plate, and then water channels for refrigerant heat dissipation, the DIP31 module of this invention encapsulates the insulating ceramic plate inside the power module, eliminating the need for additional ceramic plates during use, directly optimizing the heat dissipation path on the PTC side, resulting in better PTC-side heat dissipation; 2. The existing TO-247-4 package has a lot of unused space. The DIP31 module of this invention adopts a compact design and has no extra unused space. 3. The DIP31 module integrates two NTC resistors, which are used for junction temperature detection of the air compressor and PTC heater, respectively. The NTC is closer to the chip, making the junction temperature detection more sensitive. 4. The DIP31 module reduces the length and area of ​​the drive circuit and optimizes the parasitic inductance of the drive circuit. The two-in-one controller built using the DIP31 module has a small overall area and is less likely to cause system resonance. 5. When building the circuit, the DIP31 module can be directly fixed to the refrigerant using M3 screws and then connected to the PCB board by wave soldering. The assembly method is simple. The DIP31 module takes insulation and safety regulations into account in its design and can meet the application of devices with a voltage level of 1200V.

[0045] The DIP31 module proposed in this invention is an all-silicon carbide MOS module, which is the first module in this type of product to use an all-silicon carbide chip.

[0046] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A silicon carbide power module for integrated packaging of air compressors and PTCs, characterized in that, It includes a copper-clad substrate, silicon carbide chips, NTC resistors, a molding compound, and terminals; the copper-clad substrate has silicon carbide chips, NTC resistors, and terminals, and the copper-clad substrate is used to provide electrical connection and mechanical support; the molding compound tightly wraps the copper-clad substrate, as well as the silicon carbide chips, NTC resistors, and some terminals on the copper-clad substrate, and is used to provide mechanical strength support and complete the sealing of the silicon carbide power module; the silicon carbide chips include nine silicon carbide chips, which are used to form the circuits of the air compressor controller and the PTC heating controller in a three-phase bridge topology.

2. The silicon carbide power module for integrated packaging of air compressor and PTC according to claim 1, characterized in that: The copper-clad laminate includes an upper conductive copper layer, an insulating ceramic plate, and a lower conductive copper layer, which are connected sequentially. The upper conductive copper layer provides electrical connection, and an insulating ceramic plate is placed between the upper and lower conductive copper layers to enable welding of the insulating ceramic plate.

3. A silicon carbide power module for integrated packaging of air compressor and PTC according to claim 2, characterized in that: The upper conductive copper layer consists of several non-connected copper layers; each copper layer has a silicon carbide chip or an NTC resistor, and each copper layer has a lead-out terminal.

4. A silicon carbide power module for integrated packaging of air compressor and PTC according to claim 2, characterized in that: Of the nine silicon carbide chips, six are used to form a three-phase bridge topology air compressor controller circuit to realize the compressor's cooling function; three are used to form a PTC heating controller circuit to realize the PTC heating function; in the PTC heating controller circuit, one silicon carbide chip is used as the upper transistor of the PTC heating controller for protection, and two silicon carbide chips are used as the lower transistors of the PTC heating controller to control one PTC resistor respectively.

5. A silicon carbide power module for integrated packaging of air compressor and PTC according to claim 4, characterized in that: The three upper bridge chips in the air compressor controller circuit and the silicon carbide chip used as the upper tube of the PTC heating controller in the PTC heating controller circuit share a common drain and multiplex a terminal; the three intermediate phases in the air compressor controller circuit each multiplex a power terminal.

6. A silicon carbide power module for integrated packaging of air compressor and PTC according to claim 2, characterized in that: The NTC resistor consists of two NTC resistors located at both ends of the upper conductive copper foil. It is used to detect the junction temperature of the silicon carbide chip in the air compressor controller circuit and the PTC heating controller circuit.

7. A silicon carbide power module for integrated packaging of air compressor and PTC according to claim 2, characterized in that: The terminals include twelve power terminals and nineteen signal terminals; the twelve power terminals are the source or drain terminals of the silicon carbide chip, and the nineteen signal terminals are the control terminals of the Kelvin source, gate, or NTC resistor of the silicon carbide chip.

8. A silicon carbide power module for integrated packaging of air compressor and PTC according to claim 1, characterized in that: The dimensions of the injection molded body are 62mm×30mm×8mm, and the dimensions of the silicon carbide chip are less than or equal to 3.2mm*4.7mm.

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