Polarization ratio amplification photodetector based on nanowire array and its fabrication method

Abstract

This disclosure provides a polarization ratio amplification photodetector based on a nanowire array and its fabrication method. The polarization ratio amplification photodetector includes: a substrate; a nanowire array disposed on the substrate, the nanowire array being constructed of an in-plane anisotropic two-dimensional material, used to detect optical signals based on the low symmetry of the internal atomic structure arrangement to the response differences of light signals in the ultraviolet to near-infrared bands and the macroscopic asymmetry of the nanowire array arrangement to the absorption differences of light polarized in different directions, generating a polarization current signal; metal electrodes disposed on both sides of the nanowire array for outputting the polarization current signal; and a polarization ratio amplification circuit for converting the polarization current signal into a polarization voltage signal and amplifying it to improve the polarization ratio of the polarization current signal, outputting a target polarization current signal.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor device technology, and in particular to a polarization ratio amplification photodetector based on a nanowire array and its fabrication method. Background Technology

[0002] Polarization photodetectors, as an emerging photoelectric detection technology, can capture the polarization state information of light. Traditional polarization detection systems often rely on complex optical components such as waveplates and polarizing prisms. These complex optical components are not only large and expensive, but also difficult to be compatible with modern large-scale integrated circuit processes, which greatly limits the integration and miniaturization of polarization photodetectors. Summary of the Invention

[0003] In view of this, the present disclosure provides a polarization ratio amplification photodetector based on a nanowire array and its fabrication method, which at least partially solves the above-mentioned technical problems.

[0004] One embodiment of this disclosure provides a polarization ratio amplification photodetector based on a nanowire array, comprising: a substrate; a nanowire array disposed on the substrate, the nanowire array being constructed of an in-plane anisotropic two-dimensional material, used to detect optical signals based on the low symmetry of the internal atomic structure arrangement to the response differences of optical signals in the ultraviolet to near-infrared bands and the macroscopic asymmetry of the nanowire array arrangement to the absorption differences of polarized light in different directions, thereby generating a polarization current signal; metal electrodes disposed on both sides of the nanowire array for outputting the polarization current signal; and a polarization ratio amplification circuit for converting the polarization current signal into a polarization voltage signal and amplifying it to improve the polarization ratio of the polarization current signal, thereby outputting a target polarization current signal.

[0005] According to embodiments of this disclosure, the nanowire array is composed of multiple nanowires arranged periodically in a manner consistent with in-plane lattice arrangement.

[0006] According to embodiments of this disclosure, a polarization ratio amplification circuit includes: a first silicon transistor, the first gate of which is connected to a metal electrode on one side of a nanowire array, the first source of which is connected to an output power supply, and the first drain of which is used to output a signal; a metal electrode on the other side of the nanowire array is connected to an adjustable power supply, which is used to control the first silicon transistor to operate in the subthreshold region so that the first silicon transistor amplifies the polarization voltage signal; a second silicon transistor, the second gate of which is connected to the first gate, the second source of which is connected to a resistor-controlled power supply, and the second drain of which is used to ground; the second silicon transistor is used to convert a polarization current signal into a polarization voltage signal and input it to the first gate; the resistor-controlled power supply is used to linearly adjust the equivalent resistance of the second silicon transistor; a first resistor, one end of which is connected to the second source; a capacitor, one end of which is connected in series with the other end of the first resistor; and the other end of the capacitor is connected to the second drain; the first resistor and the capacitor serve as a protection circuit.

[0007] According to embodiments of this disclosure, the first resistor and capacitor are used for electrostatic protection and current limiting protection of the polarization ratio amplified photodetector.

[0008] According to an embodiment of this disclosure, the polarization ratio amplification circuit includes: a first silicon transistor, the first gate of the first silicon transistor being connected to a metal electrode on one side of the nanowire array, the first source being connected to an output power supply, the first drain being used to output a signal, and a metal electrode on the other side of the nanowire array being connected to an adjustment power supply, the adjustment power supply being used to control the first silicon transistor to operate in the subthreshold region so that the first silicon transistor amplifies the polarization voltage signal; and a second resistor, one end of which is connected to the first gate and the other end being grounded, the second resistor being used to convert the polarization current signal into a polarization voltage signal and input it to the first gate.

[0009] According to embodiments of this disclosure, the resistance of the second silicon transistor is on the same order of magnitude as the resistance of the nanowire array; the resistance of the second resistor is on the same order of magnitude as the resistance of the nanowire array; the second resistor is an adjustable rheostat, and the resistance of the second silicon transistor and the resistance of the second resistor are adjusted according to the resistance of the nanowire array.

[0010] According to embodiments of this disclosure, the regulating power supply, the output power supply, and the resistor-controlled power supply are all voltage-adjustable power supplies.

[0011] According to embodiments of this disclosure, the in-plane anisotropic two-dimensional material includes a group IV compound or a group VI compound; the work function of the metal electrode material is matched with the work function of the in-plane anisotropic two-dimensional material to form a good ohmic contact.

[0012] According to embodiments of this disclosure, the nanowire array, the first silicon transistor, the second silicon transistor, the first resistor, and the capacitor are connected by ultrasonic wedge soldering or soldering.

[0013] Another aspect of this disclosure provides a fabrication method for fabricating the polarization ratio amplified photodetector of this disclosure. The fabrication method includes: forming a two-dimensional nanosheet composed of an in-plane anisotropic two-dimensional material on a substrate based on chemical vapor transport combined with mechanical exfoliation, chemical vapor deposition, physical vapor deposition, or molecular beam epitaxy; subjecting the two-dimensional nanosheet to electron beam exposure and etching to form a nanowire array; fabricating metal electrodes at both ends of the nanowire array; and connecting the metal electrodes to a polarization ratio amplification circuit to obtain a polarization ratio amplified photodetector.

[0014] The polarization ratio amplification photodetector and its fabrication method based on nanowire arrays disclosed herein have at least the following technical advantages:

[0015] The core component of the photodetector unit of the polarization ratio amplification photodetector is a nanowire array constructed from an in-plane anisotropic two-dimensional material. Due to the asymmetric arrangement of the macroscopic structure and its consistency with the in-plane lattice arrangement, the nanowire array exhibits significant in-plane anisotropy. Its electrical properties, optical properties, and photoelectric response performance all show significant differences with the in-plane direction. Furthermore, the internal atomic structure arrangement has low symmetry, thus breaking through the polarization detection wavelength limitation of traditional semiconductor materials and meeting the requirements of multi-band integrated detection. At the same time, the anisotropic absorption characteristics enhance the photocurrent signal intensity and reduce the detection limit.

[0016] The polarization ratio amplifier circuit converts a weak polarization current signal into a voltage signal through current-to-voltage conversion. After amplification by a transistor-based amplifier circuit, the polarization contrast of the output signal is significantly enhanced, improving the accuracy of polarization state recognition. The polarization ratio amplifier circuit also suppresses common-mode interference such as ambient light and thermal noise, ensuring that the signal-to-noise ratio of the output target polarization current signal is superior to that of traditional detectors, making it suitable for complex electromagnetic environments.

[0017] Through the synergistic optimization of material innovation and circuit design, a comprehensive breakthrough has been achieved in the polarization detector in terms of sensitivity, polarization ratio, response speed and integration, providing high-performance and low-cost solutions for fields such as quantum technology, biomedicine and industrial automation. Attached Figure Description

[0018] The foregoing contents, as well as other objects, features, and advantages of this disclosure, will become clearer from the following description of embodiments with reference to the accompanying drawings, in which:

[0019] Figure 1 A schematic diagram of a polarization ratio amplification photodetector based on a nanowire array according to an embodiment of the present disclosure is shown.

[0020] Figure 2 A schematic diagram of an in-plane anisotropic two-dimensional nanowire array photodetector according to an embodiment of the present disclosure is shown.

[0021] Figure 3 A circuit diagram of a polarization ratio amplification photodetector based on a nanowire array according to an embodiment of the present disclosure is shown schematically.

[0022] Figure 4 A circuit diagram of a polarization ratio amplification photodetector based on a nanowire array according to another embodiment of the present disclosure is shown schematically.

[0023] Figure 5 A schematic flowchart illustrating a method for fabricating a polarization ratio amplified photodetector according to an embodiment of the present disclosure is shown.

[0024] Explanation of reference numerals in the attached figures:

[0025] 1—Silicon layer;

[0026] 2—Silicon oxide layer;

[0027] 3—Metal electrode;

[0028] 4-Nanowire array;

[0029] 5—Adjust the power supply;

[0030] 6—In-plane anisotropic two-dimensional nanowire array photodetector;

[0031] 7—Resistor-controlled power supply;

[0032] 8—First resistor;

[0033] 9—Capacitor;

[0034] 10—Output power supply;

[0035] 11—The first silicon transistor;

[0036] 12—Second silicon transistor;

[0037] 13—Semiconductor analyzer;

[0038] 14—GND;

[0039] 15—Second resistor. Detailed Implementation

[0040] The embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the present disclosure for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0041] In realizing this disclosure, it was discovered that in-plane anisotropic two-dimensional materials generally exhibit significant in-plane optical and electrical anisotropy due to the asymmetric lattice arrangement or oriented molecular arrangement in their crystal structure. Nanowire arrays fabricated based on these materials can significantly enhance the direction dependence of properties such as light absorption coefficient, carrier mobility, and photoelectric response speed by precisely controlling the diameter, aspect ratio, arrangement density, and orientation consistency of the nanowires. Ordered nanowires can induce changes in the optical and electric fields on and inside the device surface, enhancing its absorption of weak light and its in-plane anisotropy. Polarization photodetectors based on these materials and nanowire arrays can achieve efficient detection and accurate analysis of light polarization states through the synergistic interaction between light and material anisotropy. Compared to traditional isotropic materials, this combination of in-plane anisotropic materials and nanowire arrays not only possesses superior photoelectric response performance but also exhibits good compatibility with micro / nano fabrication processes, potentially overcoming the size and performance bottlenecks of traditional polarization detection systems.

[0042] In view of this, embodiments of the present disclosure provide a polarization ratio amplification photodetector based on a nanowire array, enabling high-contrast, high-resolution polarization imaging and detection in complex environments. Specific embodiments are described below.

[0043] Figure 1 A schematic diagram of a polarization ratio amplification photodetector based on a nanowire array according to an embodiment of the present disclosure is shown. Figure 2 A schematic diagram of an in-plane anisotropic two-dimensional nanowire array photodetector according to an embodiment of the present disclosure is shown.

[0044] like Figure 1 As shown, the polarization ratio amplification photodetector of this embodiment includes an in-plane anisotropic two-dimensional nanowire array photodetector and a polarization ratio amplification circuit.

[0045] like Figure 2 As shown, the in-plane anisotropic two-dimensional nanowire array photodetector includes a substrate composed of a silicon layer 1 and a silicon oxide layer 2, a metal electrode 3, and a nanowire array 4 composed of in-plane anisotropic two-dimensional materials. That is, the in-plane anisotropic two-dimensional nanowire array photodetector is a metal-semiconductor-metal (MSM) type two-dimensional photodetector.

[0046] The silicon oxide layer 2 is obtained by thermal oxidation of the silicon layer 1, and its thickness is on the order of hundreds of nanometers.

[0047] The nanowire array 4 is disposed on the substrate. The nanowire array 4 is constructed to detect optical signals and generate polarized current signals based on the difference in response to optical signals in the ultraviolet to near-infrared bands due to the low symmetry of the internal atomic structure arrangement and the difference in absorption of polarized light in different directions due to the macroscopic asymmetry of the nanowire array arrangement.

[0048] Metal electrodes 3 are disposed on both sides of nanowire array 4 and are used to output polarized current signals.

[0049] The polarization ratio amplifier circuit is used to convert the polarization current signal into a polarization voltage signal and amplify it to improve the polarization ratio of the polarization current signal, and output a target polarization current signal with a higher polarization ratio.

[0050] In some embodiments, the in-plane anisotropic two-dimensional material includes group IV or group VI compounds, such as GeSe, SnSe, GeS, etc. Figure 2 As shown, taking GeSe material as an example, it is crystallized in a highly anisotropic layered orthogonal manner (space group Pcmn-D). 2h The stacking direction is along the a-axis, the c-axis of GeSe is defined as the Armchair direction, and the b-axis is defined as the Zigzag direction.

[0051] In some embodiments, the nanowire array 4 is composed of multiple nanowires arranged periodically, with the arrangement conforming to the in-plane lattice arrangement. Due to the asymmetric arrangement of its macroscopic structure and its correspondence to its in-plane lattice arrangement, the nanowire array 4 exhibits significant in-plane anisotropy; its electrical properties, optical properties, and photoelectric response performance all show significant differences with variations in the in-plane direction. For example, a periodically arranged nanowire array consisting of nanowires / vacancies / nanowires / vacancies...

[0052] In some embodiments, the work function of the metal electrode 3 material is matched with the work function of the in-plane anisotropic two-dimensional material constituting the nanowire array to form a good ohmic contact, which can effectively avoid the Fermi pinning effect.

[0053] Figure 3 A circuit diagram of a polarization ratio amplification photodetector based on a nanowire array according to an embodiment of the present disclosure is shown schematically.

[0054] like Figure 3 As shown, the polarization ratio amplifier circuit includes: an adjustable power supply 5, a resistor-controlled power supply 7, a first resistor 8, a capacitor 9, an output power supply 10, a first silicon transistor 11, and a second silicon transistor 12.

[0055] The first gate of the first silicon transistor 11 is connected to the metal electrode 3 on one side of the nanowire array 4, the first source is connected to the output power supply 10, and the first drain is used to output the signal. The metal electrode 3 on the other side of the nanowire array 4 is connected to the regulating power supply 5, which is used to control the first silicon transistor 11 to operate in the subthreshold region so that the first silicon transistor 11 amplifies the polarization voltage signal.

[0056] The second gate of the second silicon transistor 12 is connected to the first gate, the second source is connected to the resistor-controlled power supply 7, and the second drain is used to ground GND 14. The second silicon transistor 12 is used to convert the polarized current signal into a polarized voltage signal and input it to the first gate. The resistor-controlled power supply 7 is used to linearly adjust the equivalent resistance of the second silicon transistor 12.

[0057] One end of the first resistor 8 is connected to the second source.

[0058] One end of capacitor 9 is connected in series with the other end of the first resistor 8, and the other end of capacitor 9 is connected to the second drain. The first resistor 8 and capacitor 9 are used as a protection circuit.

[0059] The first resistor 8 and capacitor 9 are used for electrostatic protection and current limiting protection of the polarization ratio amplification photodetector.

[0060] The semiconductor analyzer 13 tests the polarization ratio of the final polarization signal.

[0061] Figure 4 A circuit diagram of a polarization ratio amplification photodetector based on a nanowire array according to another embodiment of the present disclosure is shown schematically.

[0062] like Figure 4 As shown, the polarization ratio amplifier circuit includes: an adjustment power supply 5, an output power supply 10, a first silicon transistor 11, and a second resistor 15.

[0063] The first gate of the first silicon transistor 11 is connected to the metal electrode 3 on one side of the nanowire array 4, the first source is connected to the output power supply 10, and the first drain is used to output the signal. The metal electrode 3 on the other side of the nanowire array 4 is connected to the regulating power supply 5, which is used to control the first silicon transistor 11 to operate in the subthreshold region so that the first silicon transistor 11 amplifies the polarization voltage signal.

[0064] One end of the second resistor 15 is connected to the first gate, and the other end is used to ground GND 14. The second resistor 15 is used to convert the polarization current signal into a polarization voltage signal and then input it to the first gate. The resistance of the second resistor 15 in the polarization circuit should be large enough, and the capacitance should be small enough to achieve electrostatic protection and current limiting protection without interfering with the voltage divider logic of the circuit and avoiding circuit malfunction.

[0065] According to embodiments of this disclosure, an in-plane anisotropic two-dimensional nanowire array photodetector 6 receives light information with different polarization states and converts it into current signals of different magnitudes. When the polarization information of the light illuminating the in-plane anisotropic two-dimensional nanowire array photodetector 6 changes, the current signal changes. Due to the presence of the second silicon transistor 12 or the second resistor 15, the change in current signal is converted into a change in voltage signal. This voltage signal is connected to the gate of the first silicon transistor 11. The equivalent resistance of the second silicon transistor 12 can be linearly adjusted by adjusting the input voltage of the power supply 7. Adjusting the power supply 5 causes the first silicon transistor 11 to operate in the subthreshold region. The gate voltage change caused by the change in polarization light signal will significantly modulate the source-drain current output of the first silicon transistor 11 operating in the subthreshold region, thereby outputting a larger polarization current signal. Finally, an amplified polarization signal is output. The polarization signal is analyzed using a semiconductor analyzer to calculate the amplified polarization ratio.

[0066] In some embodiments, the resistance of the second silicon transistor 12 is on the same order of magnitude as the resistance of the nanowire array. The resistance of the second resistor 15 is also on the same order of magnitude as the resistance of the nanowire array. The second resistor 15 is an adjustable rheostat, and the resistances of the second silicon transistor 12 and the second resistor 15 are adjusted according to the resistance of the nanowire array. The first silicon transistor 11 needs to have a low subthreshold swing so that the polarization ratio amplifier circuit can amplify the polarization signal of the photodetector to a greater extent.

[0067] In some embodiments, the regulating power supply, the output power supply, and the resistor-controlled power supply are all voltage-adjustable power supplies.

[0068] In some embodiments, the nanowire array, the first silicon transistor, the second silicon transistor, the first resistor, and the capacitor are connected by ultrasonic wedge welding or soldering.

[0069] Embodiments of this disclosure also provide a preparation method for preparing the above-mentioned polarization ratio amplified photodetector.

[0070] Figure 5 A schematic flowchart illustrating a method for fabricating a polarization ratio amplified photodetector according to an embodiment of the present disclosure is shown.

[0071] like Figure 5 As shown, the preparation method includes operations S510 to S540.

[0072] In operation S510, two-dimensional nanosheets composed of in-plane anisotropic two-dimensional materials are formed on a substrate based on chemical vapor transport combined with mechanical exfoliation, chemical vapor deposition, physical vapor deposition, or molecular beam epitaxy.

[0073] For example, two-dimensional nanosheets prepared by chemical vapor transport combined with mechanical exfoliation or chemical vapor deposition are used as light absorption layers to construct MSM-type optoelectronic devices. Materials with stable in-plane anisotropy (GeSe, SnSe, GeS) are selected. Due to the asymmetric lattice arrangement in the crystal structure, the two-dimensional nanosheets exhibit significant in-plane anisotropy. Their electrical properties, optical properties and photoelectric response performance all show significant differences with the in-plane direction.

[0074] The chemical vapor transport method is employed: crystals with high crystallinity are prepared by controlling the growth temperature and growth cycle, and then mechanically exfoliated into two-dimensional nanosheets with nanometer-scale thickness. Finally, polydimethylsiloxane (PDMS) is used to transfer the two-dimensional nanosheets onto a substrate. Two-dimensional nanosheets can also be prepared by chemical vapor deposition: using elemental powder as a precursor, in a mixed atmosphere of inert and reactive gases, by precisely controlling the reaction temperature, gas flow rate, and substrate type, the precursor undergoes a gas-phase chemical reaction on the substrate surface and grows layer by layer to form two-dimensional nanosheets with uniform thickness and good crystallinity.

[0075] By operating the S520, two-dimensional nanosheets are subjected to electron beam exposure and etching to form a nanowire array.

[0076] Nanowire arrays can be fabricated using processes such as nanoimprinting, electron beam lithography (or traditional ultraviolet lithography) and etching.

[0077] Electron beam exposure combined with inductively coupled plasma etching is employed: an electron beam exposure resist is spin-coated onto a substrate containing two-dimensional nanosheet material to obtain a uniformly thick electron beam exposure resist film. The two-dimensional nanosheet material with the electron beam exposure resist spin-coated is then exposed using an electron beam exposure device. After a development process, a nanowire array structure electron beam exposure resist hard mask is obtained on the two-dimensional nanosheet. Then, an inductively coupled plasma etching device is used to etch the two-dimensional nanosheet and the substrate. After removing the residual electron beam exposure hard mask using chemical reagents, an in-plane anisotropic two-dimensional material nanowire array is obtained.

[0078] Using the S530, metal electrodes are fabricated at both ends of the nanowire array.

[0079] For example, electrodes are fabricated using electron beam exposure and metal evaporation: Electron beam exposure adhesive is spin-coated onto a substrate with an existing in-plane anisotropic two-dimensional nanowire array using a spin-coating method to obtain an electron beam exposure adhesive film of uniform thickness. Then, the two-dimensional nanosheet material with the spin-coated electron beam exposure adhesive is exposed using an electron beam exposure device. After a development process, an electron beam exposure adhesive hard mask is obtained with empty ends of the nanowire array. Then, metal is deposited onto the entire structure, and the thickness of the deposited metal is much smaller than the thickness of the electron beam exposure adhesive hard mask. Finally, chemical reagents are used to remove the electron beam exposure adhesive hard mask and the metal film on it to form an MSM-type two-dimensional nanowire array photodetector.

[0080] By operating S540, the metal electrode is connected to the polarization ratio amplification circuit to obtain a polarization ratio amplified photodetector.

[0081] The preparation method of this disclosure involves synthesizing crystals via chemical vapor deposition, preparing nanosheets via mechanical exfoliation, preparing nanowire arrays via electron beam exposure and etching, and preparing MSM-type photodetectors via electron beam exposure and metal evaporation. Combined with precise circuit component mounting, the device size can be significantly reduced. Furthermore, the leakage protection design of the substrate oxide layer, the subthreshold region operating state of the transistor, and the circuit protection design ensure the stable performance of the device after packaging. The standardized synthesis and welding process facilitates the large-scale fabrication of devices to achieve mass production.

[0082] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. The scope of this disclosure is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.

Claims

1. A polarization ratio amplification photodetector based on a nanowire array, characterized in that, include: Substrate; A nanowire array, disposed on the substrate, is constructed of an in-plane anisotropic two-dimensional material and is used to detect the optical signal based on the difference in response to optical signals in the ultraviolet to near-infrared bands due to the low symmetry of the internal atomic structure arrangement and the difference in absorption of polarized light in different directions due to the macroscopic asymmetry of the nanowire array arrangement, thereby generating a polarized current signal. Metal electrodes are disposed on both sides of the nanowire array for outputting the polarization current signal; A polarization ratio amplifier circuit is used to convert polarization current signals into polarization voltage signals. The signal is amplified to improve the polarization ratio of the polarized current signal, and the target polarized current signal is output.

2. The polarization ratio amplification photodetector according to claim 1, characterized in that, The nanowire array is composed of multiple nanowires arranged periodically, and the arrangement is consistent with the in-plane lattice arrangement.

3. The polarization ratio amplification photodetector according to claim 1, characterized in that, The polarization ratio amplification circuit includes: A first silicon transistor has a first gate connected to a metal electrode on one side of the nanowire array, a first source connected to an output power supply, and a first drain used for outputting a signal. A metal electrode on the other side of the nanowire array is connected to an adjustable power supply, which is used to control the first silicon transistor to operate in the subthreshold region so that the first silicon transistor amplifies the polarization voltage signal. The second silicon transistor has a second gate connected to the first gate, a second source connected to a resistor-controlled power supply, and a second drain grounded. The second silicon transistor is used to convert the polarized current signal into the polarized voltage signal and input it to the first gate. The resistor-controlled power supply is used to linearly adjust the equivalent resistance of the second silicon transistor. The first resistor has one end connected to the second source electrode. A capacitor is connected in series at one end with the other end of the first resistor, and the other end of the capacitor is connected to the second drain. The first resistor and the capacitor are used as a protection circuit.

4. The polarization ratio amplification photodetector according to claim 3, characterized in that, The first resistor and the capacitor are used to provide electrostatic protection and current limiting protection for the polarization ratio amplified photodetector.

5. The polarization ratio amplification photodetector according to claim 1, characterized in that, The polarization ratio amplification circuit includes: A first silicon transistor has a first gate connected to a metal electrode on one side of the nanowire array, a first source connected to an output power supply, and a first drain used for outputting a signal. A metal electrode on the other side of the nanowire array is connected to an adjustable power supply, which is used to control the first silicon transistor to operate in the subthreshold region so that the first silicon transistor amplifies the polarization voltage signal. The second resistor has one end connected to the first gate and the other end grounded. The second resistor is used to convert the polarized current signal into a polarized voltage signal and then input it into the first gate.

6. The polarization ratio amplification photodetector according to any one of claims 3 to 5, characterized in that, The resistance of the second silicon transistor is on the same order of magnitude as the resistance of the nanowire array; the resistance of the second resistor is on the same order of magnitude as the resistance of the nanowire array. The second resistor is an adjustable resistor, and the resistance values ​​of the second silicon transistor and the second resistor are adjusted according to the resistance value of the nanowire array.

7. The polarization ratio amplification photodetector according to claim 3, characterized in that, The regulating power supply, the output power supply, and the resistor-controlled power supply are all voltage-adjustable power supplies.

8. The polarization ratio amplification photodetector according to claim 1, characterized in that, The in-plane anisotropic two-dimensional material includes group IV or group VI compounds; the work function of the metal electrode material is matched with the work function of the in-plane anisotropic two-dimensional material to form a good ohmic contact.

9. The polarization ratio amplification photodetector according to claim 3, characterized in that, The nanowire array, the first silicon transistor, the second silicon transistor, the first resistor, and the capacitor are connected by ultrasonic wedge soldering or soldering.

10. A preparation method, characterized in that, The method for fabricating a polarization ratio amplification photodetector as described in any one of claims 1 to 9 comprises: Two-dimensional nanosheets composed of in-plane anisotropic two-dimensional materials are formed on a substrate by chemical vapor transport combined with mechanical exfoliation, chemical vapor deposition, physical vapor deposition, or molecular beam epitaxy. The two-dimensional nanosheets are subjected to electron beam exposure and etching to form a nanowire array; Metal electrodes are fabricated at both ends of the nanowire array; The metal electrode is connected to the polarization ratio amplification circuit to obtain a polarization ratio amplification photodetector.

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