A double-junction 940 nm infrared LED epitaxial wafer and a preparation method thereof

CN122579782BActive Publication Date: 2026-10-27NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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Patent Information

Application Number
CN202611072942.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2026-07-20
Publication Date
2026-10-27
Estimated Expiration
2046-07-20

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Abstract

The present application relates to the technical field of LED, in particular to a kind of double junction 940nm infrared LED epitaxial wafer and preparation method thereof, the double junction 940nm infrared LED epitaxial wafer starts from GaAs substrate by below and upwards in turn N type buffer layer, etching stop layer, N type ohmic contact layer, N type current spreading layer, first N type restriction layer, first multi-quantum well active layer, first P type restriction layer, first tunnel junction, parallel layer, second tunnel junction, substrate-like layer, second N type restriction layer, second multi-quantum well active layer, second P type restriction layer, P type current spreading layer, P type contact layer.The present application effectively improves the problem of insufficient brightness and high voltage of conventional double junction 940nm infrared LED under large current working state by structure optimization.
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