Light-emitting devices and display devices

Abstract

This invention relates to the field of semiconductor manufacturing technology, and particularly to a light-emitting device and a display device, comprising a driving substrate, light-emitting units, a first electrode, a second electrode, an insulating layer, and a non-polar metal structure. A first pad and a second pad are disposed on the driving substrate. Each light-emitting unit includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer disposed sequentially. The first electrode is electrically connected to the first semiconductor layer and the first pad, and the second electrode is electrically connected to the second semiconductor layer and the second pad. The insulating layer covers the light-emitting unit, forming a cavity between the insulating layer and the driving substrate. The non-polar metal structure is disposed within the cavity. This configuration effectively avoids solder ball interconnection problems between adjacent light-emitting units, prevents electrode crosstalk, and improves the accuracy of pixel control.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a light-emitting device and a display device. Background Technology

[0002] In recent years, light-emitting diodes (LEDs) have been widely used in commercial lighting applications. As a light source, LEDs have many advantages, including lower energy consumption, longer lifespan, smaller size, and faster switching speed. As a result, traditional lighting sources, such as incandescent lamps, are gradually being replaced by LED light sources.

[0003] Micro-LED display technology refers to a display technology that uses self-emissive, micrometer-sized LEDs as light-emitting pixel units, assembling them onto a driving panel to form a high-density LED array. Due to the small size, high integration, and self-emissive nature of Micro-LEDs, they have significant advantages over LCD and OLED in terms of brightness, resolution, contrast ratio, energy consumption, lifespan, response speed, and thermal stability. They can be applied in display fields such as AR / VR, wearable devices, automotive head-up displays (HUDs), micro-projection, and 3D printing.

[0004] With the industrialization of micro LED light-emitting array devices, applications such as AR glasses, uLED displays, wearable devices, and even uLED pixelated car lights are rapidly developing. In some monochrome or white light array pixel light-emitting devices, a common approach is to use a common-cathode flip-chip array, aligned and soldered onto CMOS elements. The periphery employs a common-cathode design, while each internal light-emitting unit is independently addressed and controlled by the CMOS element. Because the soldering process relies on high-precision alignment equipment and the reliable eutectic formation of solder materials at high temperatures, Au-Sn materials are typically used for soldering. Currently, in actual soldering processes, such as... Figure 1 As shown, excess Sn spheres at high temperatures can easily cause connections between cells (e.g., Figure 1 (Within the circled area) When this occurs, the anodes of connected units form an electrical connection. When the CMOS sends an on command to one of the units, the connected units will also emit light, leading to inaccurate pixel display and pixel interference. Therefore, how to solve this problem has become one of the technical challenges that urgently needs to be addressed by those skilled in the art.

[0005] It should be noted that the information disclosed in this background section is intended only to enhance the understanding of the overall background of the present invention, and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Summary of the Invention

[0006] The present invention provides a light-emitting device, which includes a driving substrate, a plurality of light-emitting units, a first electrode, a second electrode, an insulating layer, and a non-polar metal structure.

[0007] The driving substrate has a first pad and a second pad with different polarities, which are independently disposed. Each light-emitting unit includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, with the light-emitting layer located between the first semiconductor layer and the second semiconductor layer. The two ends of the first electrode are electrically connected to the first semiconductor layer and the first pad, respectively. The two ends of the second electrode are electrically connected to the second semiconductor layer and the second pad, respectively. An insulating layer covers a portion of the light-emitting unit, and a cavity is formed between the insulating layer and the driving substrate. A non-polar metal structure is disposed within the cavity.

[0008] The present invention also provides a display device, the display device comprising a light-emitting device as described in any of the preceding descriptions.

[0009] The present invention provides a light-emitting device and a display device. By setting a non-polar metal structure in the cavity, the excess solder balls generated during the welding process are adsorbed by the non-polar metal structure, so as to ensure that there is no crosstalk between the electrodes of each light-emitting unit, thereby improving the accuracy of pixel control. In addition, the added non-polar metal structure can also effectively support the overall epitaxy.

[0010] Other features and advantages of the present invention will be set forth in the following description, and some of the technical features and advantages may be apparent from the description or learned by practicing the invention. Attached Figure Description

[0011] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, some of the drawings in the following description are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0012] Figure 1 This is a schematic diagram showing the interconnection of Sn balls between light-emitting units in a traditional display device; Figure 2 This is a top view of the light-emitting device provided in the first embodiment of the present invention; Figure 3 This is a cross-sectional view of the light-emitting device provided in the first embodiment of the present invention; Figure 4 This is a top view of the light-emitting device provided in the second embodiment of the present invention; Figure 5 This is a cross-sectional view of the light-emitting device provided in the second embodiment of the present invention; Figure 6 This is a cross-sectional structural schematic diagram of the light-emitting device provided in the third embodiment of the present invention.

[0013] Figure label: 10-Driving substrate; 12-First electrode; 14-Second electrode; 141-Second connection electrode; 142-Second common electrode; 16-Insulating layer; 18-Non-polar metal structure; 20-First pad; 22-Second pad; 24-First semiconductor layer; 26-Light-emitting layer; 28-Second semiconductor layer; 30-Cavity; 32-Metal layer; S1-Spacing between first electrodes; L1-Side length of light-emitting unit. Detailed Implementation

[0014] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. The technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0015] In the description of this invention, it should be understood that the terms "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more. Additionally, the term "comprising" and any variations thereof mean "at least comprising."

[0016] First Embodiment Please see Figure 2 and Figure 3 , Figure 2 This is a top view of the light-emitting device provided in the first embodiment of the present invention. Figure 3This is a cross-sectional structural schematic diagram of the light-emitting device provided in the first embodiment of the present invention. It should be noted that... Figure 3 For illustrative purposes, the relationship of the non-polar metal structure 18 between three light-emitting units is shown to illustrate the arrangement of the non-polar metal structure 18 between the light-emitting units when there are three or more light-emitting units. To achieve at least one or more of the aforementioned advantages, an embodiment of the present invention provides a light-emitting device, as shown in the figure, which includes at least a driving substrate 10, a plurality of light-emitting units, a first electrode 12, a second electrode 14, an insulating layer 16, and a non-polar metal structure 18.

[0017] The driving substrate 10 has a first pad 20 and a second pad 22 with different polarities. For example, the first pad 20 is an anode pad, and the second pad 22 is a cathode pad. The first pad 20 and the second pad 22 are independently disposed. The second pad 22 can be a common cathode pad, meaning that all cathode pads on the driving substrate 10 share this common cathode pad. The driving substrate 10 can, for example, employ one or more of the following active designs: thin-film transistor (TFT), low-temperature polysilicon (LTPS), CMOS integrated circuit, high-mobility transistor (HEMT). In this embodiment, the driving substrate 10 employs a CMOS integrated circuit.

[0018] Each light-emitting unit includes a first semiconductor layer 24, a light-emitting layer 26, and a second semiconductor layer 28, with the light-emitting layer 26 located between the first semiconductor layer 24 and the second semiconductor layer 28. It should be noted that the number of light-emitting units can be two or more. For example, such as... Figure 2 The number of light-emitting units is four. However, this invention is not limited thereto. Depending on the actual design requirements, the number of light-emitting units can also be nine, sixteen, twenty-five, etc., to form a corresponding array arrangement.

[0019] The first semiconductor layer 24 can be a P-type semiconductor layer, which can provide holes to the light-emitting layer 26 under power. In some embodiments, the first semiconductor layer 24 includes a P-type doped nitride layer. The P-type doped nitride layer may include one or more P-type impurities. The P-type impurities may include one or a combination of Mg, Zn, and Be. The first semiconductor layer 24 can be a single-layer structure or a multi-layer structure with different compositions.

[0020] The light-emitting layer 26 can be a quantum well (QW) structure. In some embodiments, the light-emitting layer 26 can also be a multiple quantum well (MQW) structure, wherein the multiple quantum well structure includes multiple quantum well layers (Wells) and multiple quantum barrier layers (Barriers) arranged alternately in a repeating manner, such as a GaN / AlGaN, InAlGaN / InAlGaN, or InGaN / AlGaN multi-quantum well structure. Furthermore, the composition and thickness of the well layers within the light-emitting layer 26 determine the wavelength of the generated light. To improve the luminous efficiency of the light-emitting layer 26, this can be achieved by changing the depth of the quantum wells, the number of paired quantum wells and quantum barriers, the thickness, and / or other characteristics within the light-emitting layer 26.

[0021] The second semiconductor layer 28 can be an N-type semiconductor layer, which can provide electrons to the light-emitting layer 26 under the influence of a power source. In some embodiments, the second semiconductor layer 28 includes an N-type doped nitride layer. The N-type doped nitride layer may include N-type impurities. N-type impurities may include one or a combination of Si, Ge, and Sn. In some embodiments, the second semiconductor layers 28 of each light-emitting unit are interconnected.

[0022] In some embodiments, the first semiconductor layer 24, the light-emitting layer 26, and the second semiconductor layer 28 may be formed from materials such as aluminum gallium indium nitride, gallium nitride, aluminum gallium nitride, aluminum indium phosphide, aluminum gallium indium phosphide, gallium arsenide, or aluminum gallium arsenide. The first semiconductor layer 24 or the second semiconductor layer 28 includes a capping layer that provides electrons or holes and may include other layer materials, such as a current spreading layer, a window layer, or an ohmic contact layer, etc., configured as different multilayers depending on the doping concentration or composition content. The light-emitting layer 26 is the region that provides light radiation for electron-hole recombination, and different materials may be selected depending on the emission wavelength. The light-emitting layer 26 may be a periodic structure of a single quantum well or multiple quantum wells. By adjusting the composition ratio of the semiconductor materials in the light-emitting layer 26, it is desired to radiate light of different wavelengths.

[0023] The two ends of the first electrode 12 are electrically connected to the first semiconductor layer 24 and the first pad 20, respectively. As shown in the figure, the upper end of the first electrode 12 is electrically connected to the first semiconductor layer 24, and the lower end of the first electrode 12 is electrically connected to the first pad 20. The first electrode 12 may include a metallic material, and the first electrode 12 may be a single-layer or multi-layer metallic stack structure. Its material composition includes at least Au / Sn (gold / tin) metallic material, and preferably a metallic material with good soldering effect.

[0024] The two ends of the second electrode 14 are electrically connected to the second semiconductor layer 28 and the second pad 22, respectively. As shown in the figure, the upper end of the second electrode 14 is electrically connected to the second semiconductor layer 28, and the lower end of the second electrode 14 is electrically connected to the second pad 22. The second electrode 14 may include a metallic material, and the second electrode 14 may be a single-layer or multi-layer metallic stack structure, the material composition of which includes at least Au / Sn (gold / tin) metallic material, and preferably a metallic material with good welding effect. In some embodiments, the second electrode 14 includes a second connecting electrode 141 and a second common electrode 142. The second connecting electrode 141 has a mesh structure, and the second connecting electrode 141 may be a common cathode metal mesh. The second common electrode 142 is arranged around a plurality of light-emitting units, and the second connecting electrode 141 is electrically connected to the second pad 22 through the second common electrode 142. The material composition of the second common electrode 142 includes at least Au / Sn (gold / tin) metallic material, and preferably a metallic material with good welding effect. Thus, the second electrode 14 forms a common cathode pad, meaning that the cathodes of each light-emitting unit share the second electrode 14, and the second connection electrodes 141 of each light-emitting unit share the second common electrode 142.

[0025] The insulating layer 16 covers a portion of the light-emitting unit. The insulating layer 16 can be used to reduce short-circuit abnormalities, but this disclosure is not limited to this. The insulating layer 16 is made of a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material may include silicone. The dielectric material includes electrically insulating materials such as aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the insulating layer 16 may be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof. Such combinations may include, for example, a Bragg reflector (DBR) formed by repeatedly stacking two materials with different refractive indices. A cavity 30 is formed between the insulating layer 16 and the driving substrate 10. Specifically, refer to... Figure 3 As shown, the cavity 30 can be formed in the area enclosed by the insulating layer 16, the first electrode 12 and the first pad 20, the second electrode 14 and the second pad 22, and the driving substrate 10; alternatively, the cavity 30 can also be formed in the area enclosed by the insulating layer 16, the adjacent second electrode 14 and the second pad 22, and the driving substrate 10. The above structures are described in... Figure 3 The central part encloses four square cavities, each 30 cm in diameter.

[0026] A non-polar metal structure 18 is disposed within the cavity 30. By disposing of the non-polar metal structure 18 within the cavity 30, excess solder balls generated during the welding process are adsorbed, ensuring no crosstalk occurs between the electrodes of each light-emitting unit, thereby improving the accuracy of pixel control. Furthermore, the added non-polar metal structure 18 also provides effective support for the overall epitaxy. To further explain, although the non-polar metal structure 18 is made of a metallic material, which can effectively adsorb solder balls (e.g., Au, Al, Ti, Cu, Mo, or W), it does not participate in current conduction. Its purpose is to adsorb excess solder balls generated during the welding process, ensuring no crosstalk occurs between the electrodes of each light-emitting unit. In other words, the non-polar metal structure 18 is electrically isolated from the first semiconductor layer 24 and from the second semiconductor layer 28. Therefore, any structure capable of performing the above functions can be considered a non-polar metal structure 18 as described in this invention.

[0027] In some embodiments, the material of the nonpolar metal structure 18 has a melting point higher than that of tin (Sn), which can prevent it from being damaged by high temperature during the welding process, thereby ensuring its adsorption effect and ensuring that there is no crosstalk between the electrodes of each light-emitting unit, thereby improving the accuracy of pixel control.

[0028] In some embodiments, the thickness of the non-polar metal structure 18 is 50% to 90% of the sum of the thicknesses of the first electrode 12 and the first pad 20. That is, the non-polar metal structure 18 does not simultaneously connect the insulating layer 16 and the driving substrate 10, but is only disposed on one side of either the insulating layer 16 or the driving substrate 10, to ensure sufficient space is left for absorbing excess solder balls generated during the soldering process, thereby improving the accuracy of pixel control. Preferably, the thickness of the non-polar metal structure 18 is 50% to 70% of the sum of the thicknesses of the first electrode 12 and the first pad 20.

[0029] In some embodiments, the lower surface of the insulating layer 16 is located between the lower surface of the first semiconductor layer 24 and the lower surface of the first electrode 12. The upper and lower surfaces can be understood as the surfaces of each layer closest to the driving substrate 10. This effectively improves the insulation protection effect of the insulating layer 16 and allows sufficient space to be reserved on the lower surface of the insulating layer 16 for the non-polar metal structure 18, effectively avoiding problems such as current crosstalk. Furthermore, this arrangement allows for the insulation layer 16 to be covered by the first electrode 12 and / or the insulating layer 16 to be covered by the second electrode 14, thereby enhancing device performance.

[0030] In some embodiments, the light-emitting device is mainly used in micro light-emitting arrays, with a small overall size. The minimum side length of each light-emitting unit ranges from 10μm to 100μm, preferably from 30μm to 80μm, and the area of ​​each light-emitting unit ranges from 100μm. 2 Up to 10000μm 2 1000μm is preferred 2 Up to 7000μm 2 As shown in the diagram, each light-emitting unit is square with a side length of 30μm. However, this design is not limited to this; each light-emitting unit can also be rectangular, polygonal, or other shapes, and its overall size can be adjusted accordingly.

[0031] In some embodiments, the spacing S1 between the first electrodes 12 of two adjacent light-emitting units is 0.2 to 1.5 times or no more than 1.5 times the side length L1 of the light-emitting unit, to ensure sufficient space for setting the non-polar metal structure 18 and to allow the non-polar metal structure 18 sufficient space to absorb excess solder balls generated during the welding process. Further, the side length of the light-emitting unit can refer to the side length of the smallest side of the light-emitting unit, or the side length of the side parallel to the direction of the spacing S1 between the first electrodes 12. As shown in the figure, the side parallel to the direction of the spacing S1 between the left and right first electrodes 12 is the upper or lower side of the light-emitting unit.

[0032] In some embodiments, viewed from above, the nonpolar metal structure 18 includes multiple metal layers 32, which are spaced apart, meaning there is at least a gap greater than 0 between the multiple metal layers 32. In some embodiments, the multiple metal layers 32 are arranged in an array, resulting in better overall adsorption. Furthermore, as the number of metal layers 32 increases, the risk of crosstalk caused by excess Sn spheres connecting the metal layers 32 and subsequently connecting the light-emitting units can be reduced (specifically, when the number of metal layers 32 is sufficient, crosstalk can only occur if all metal layers 32 are connected to the light-emitting units). The metal layers 32 are insulated from each other, further preventing crosstalk.

[0033] In some embodiments, the minimum side length of each metal layer 32 ranges from 1 μm to 10 μm, or even from 5 μm to 10 μm. This allows the metal layer 32 to effectively absorb excess solder balls generated during the welding process, ensuring that there is no crosstalk between the electrodes of each light-emitting unit, thereby improving the accuracy of pixel control. It should be noted that... Figure 2 Since the middle metal layer 32 is relatively small, the size of the metal layer 32 can be understood by referring to the side length L1 of the light-emitting unit.

[0034] In some embodiments, the spacing between two adjacent metal layers 32 ranges from 1 to 10 μm, or even from 2 μm to 10 μm. This avoids wasting layout space and ensures that enough metal layers 32 can be set to effectively absorb excess solder balls generated during the welding process. Furthermore, it ensures sufficient spacing between each metal layer 32 to reduce the risk of crosstalk caused by excess Sn balls connecting the metal layers 32 and subsequently connecting the light-emitting units. This ensures that crosstalk does not occur between the electrodes of each light-emitting unit, thereby improving the accuracy of pixel control. It should be noted that... Figure 2 The spacing between the intermediate metal layers 32 is small, therefore it is not shown in the figure. Figure 2 For example, the spacing between two adjacent metal layers 32 can refer to the minimum spacing between any two of the top four metal layers 32 in the figure.

[0035] In some embodiments, viewed from above, at least two rows of independently arranged metal layer 32 arrays are provided between two adjacent light-emitting units. This ensures the overall adsorption effect while reducing the risk of crosstalk between light-emitting units caused by excess Sn balls connecting the metal layers 32. Figure 2 In this invention, four rows of independently arranged metal layers 32 are arranged between two adjacent light-emitting units, and each metal layer 32 has a block structure. However, the invention is not limited thereto. Depending on the actual design requirements, three, five, six, or eight rows of independently arranged metal layers 32 may also be arranged between two adjacent light-emitting units.

[0036] In some embodiments, the first pad 20 and the first electrode 12 are made of different materials, and the second pad 22 and the second electrode 14 are made of different materials.

[0037] In some embodiments, such as Figure 3 As shown, the first pad 20 and the second pad 22 are made of Au, the first electrode 12 and the second electrode 14 are made of Sn, and the non-polar metal structure 18 connects to the insulating layer 16. The non-polar metal structure 18 is made of a different material than the first electrode 12, and the non-polar metal structure 18 is made of a different material than the second electrode 14. This is because placing the non-polar metal structure 18 near the Sn metal side can more effectively adsorb excess Sn spheres generated during the soldering process, ensuring that there is no crosstalk between the electrodes of each light-emitting unit.

[0038] In some embodiments, the thickness of the first pad 20 ranges from 1 to 5 μm, and the thickness of the second pad 22 ranges from 1 to 5 μm. If the first pad 20 and the second pad 22 are too thin, the electrical conductivity will be weakened; if the first pad 20 and the second pad 22 are too thick, more solder balls will be generated during the soldering process, increasing the adsorption burden. That is, the thickness of the first pad 20 and / or the second pad 22 ranges from 1 to 5 μm.

[0039] In some embodiments, the thickness of the first electrode 12 ranges from 1 to 5 μm, and the thickness of the second electrode 14 ranges from 1 to 5 μm. If the first electrode 12 and the second electrode 14 are too thin, the electrical conductivity will be weakened; if the first electrode 12 and the second electrode 14 are too thick, more solder balls will be generated during the welding process, increasing the adsorption burden. That is, the thickness of the first electrode 12 and / or the second electrode 14 ranges from 1 to 5 μm.

[0040] Meanwhile, the first pad 20, the second pad 22, the first electrode 12, and the second electrode 14 have sufficient thickness to ensure that there is enough space between the insulating layer 16 and the driving substrate 10 to form a cavity 30, thereby ensuring that there is enough space for setting the non-polar metal structure 18, so that the non-polar metal structure 18 can have enough space to adsorb the excess solder balls generated during the welding process.

[0041] In some embodiments, such as Figure 3 As shown, a non-polar metal structure 18 is disposed within the cavity 30. Areas within the cavity 30 without the non-polar metal structure 18 can be filled with air. Since a metal circuit layer exists on the surface of the driving substrate 10, an insulating material is then applied to the surface, meaning the areas on the driving substrate 10 corresponding to the non-polar metal structure 18 are insulated. This also allows sufficient space for the non-polar metal structure 18 to be adsorbed, ensuring no crosstalk occurs between the electrodes of each light-emitting unit, thereby improving the accuracy of pixel control.

[0042] Second Embodiment Please see Figure 4 and Figure 5 , Figure 4 This is a top view schematic diagram of the light-emitting device provided in the second embodiment of the present invention. Figure 5 This is a cross-sectional structural schematic diagram of the light-emitting device provided in the second embodiment of the present invention. It should be noted that... Figure 5 For illustrative purposes, the relationship of the non-polar metal structures 18 between the three light-emitting units is shown. Compared to the light-emitting devices of other embodiments, the main difference in this embodiment is that the cavities 30 can be arranged around the first electrode 12 and the first pad 20. Furthermore, each cavity 30 is provided with a non-polar metal structure 18. That is, cavities 30 with non-polar metal structures 18 exist in the peripheral areas of the first electrode 12 and the first pad 20, so that the non-polar metal structures 18 arranged in the cavities 30 can more fully absorb excess solder balls generated during the soldering process, improving the accuracy of pixel control.

[0043] A non-polar metal structure 18 is also provided in the outer cavity 30 formed by the second common electrode 142, the second pad 22, the insulating layer 16, the first electrode 12, the first pad 20, and the driving substrate 10, so that the non-polar metal structure 18 provided in the cavity 30 can more fully adsorb the excess solder balls generated during the welding process and improve the accuracy of pixel control.

[0044] Third Embodiment Please see Figure 6 , Figure 6 This is a cross-sectional view of the light-emitting device provided in the third embodiment of the present invention. Compared to the light-emitting devices of other embodiments, the main differences in this embodiment are: the materials of the first pad 20 and the second pad 22 include Sn; the materials of the first electrode 12 and the second electrode 14 include Au; the non-polar metal structure 18 connects to the driving substrate 10; the non-polar metal structure 18 and the first pad 20 are made of different materials; and the non-polar metal structure 18 and the second pad 22 are made of different materials. This is because placing the non-polar metal structure 18 near the Sn metal side can more effectively adsorb excess Sn spheres generated during the soldering process, ensuring that there is no crosstalk between the electrodes of each light-emitting unit.

[0045] It should be noted that in some embodiments, the nonpolar metal structure 18 can also be disposed on the side away from the Sn metal, which can also achieve the same function of adsorbing excess Sn spheres generated during the welding process. However, it is a more preferable solution to dispose of the nonpolar metal structure 18 on the side closer to the Sn metal.

[0046] The present invention also provides a display device, the display device comprising a light-emitting device as described in any of the preceding descriptions.

[0047] In summary, the light-emitting device and display device provided by the present invention, by setting a non-polar metal structure 18 in the cavity 30, can adsorb excess solder balls generated during the welding process, thereby ensuring that there is no crosstalk between the electrodes of each light-emitting unit, and thus improving the accuracy of pixel control; in addition, the added non-polar metal structure 18 can also effectively support the overall epitaxy.

[0048] Furthermore, those skilled in the art should understand that although many problems exist in the prior art, each embodiment or technical solution of the present invention can be improved in only one or a few aspects, without necessarily solving all the technical problems listed in the prior art or the background art simultaneously. Those skilled in the art should understand that any content not mentioned in a claim should not be construed as a limitation on that claim.

[0049] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light-emitting device, characterized in that: The light-emitting device includes: A driving substrate, wherein a first pad and a second pad with different polarities are provided on the driving substrate, and the first pad and the second pad are provided independently of each other; Multiple light-emitting units, each light-emitting unit including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, wherein the light-emitting layer is located between the first semiconductor layer and the second semiconductor layer; The first electrode has its two ends electrically connected to the first semiconductor layer and the first pad, respectively. The second electrode has its two ends electrically connected to the second semiconductor layer and the second pad, respectively. An insulating layer, the light-emitting unit covered by the insulating layer, and a cavity formed between the insulating layer and the driving substrate; A nonpolar metal structure is disposed within the cavity.

2. The light-emitting device according to claim 1, characterized in that: The cavity is arranged around the first electrode and the first pad.

3. The light-emitting device according to claim 1, characterized in that: The nonpolar metal structure is electrically isolated from the first semiconductor layer, and the nonpolar metal structure is electrically isolated from the second semiconductor layer.

4. The light-emitting device according to claim 1, characterized in that: The thickness of the nonpolar metal structure is 50% to 90% of the sum of the thicknesses of the first electrode and the first pad.

5. The light-emitting device according to claim 1, characterized in that: The insulating layer covering the first electrode portion has its lower surface located between the first semiconductor layer and the lower surface of the first electrode.

6. The light-emitting device according to claim 1, characterized in that: The minimum side length of each of the light-emitting units ranges from 10μm to 100μm.

7. The light-emitting device according to claim 1, characterized in that: The spacing between the first electrodes of two adjacent light-emitting units is 0.2 to 1.5 times the side length of the light-emitting unit.

8. The light-emitting device according to claim 1, characterized in that: The nonpolar metal structure comprises multiple metal layers, which are spaced apart.

9. The light-emitting device according to claim 8, characterized in that: Viewed from above, the multiple metal layers are arranged in an array.

10. The light-emitting device according to claim 8, characterized in that: The minimum side length of each of the metal layers ranges from 1 μm to 10 μm.

11. The light-emitting device according to claim 8, characterized in that: The spacing between two adjacent metal layers ranges from 1 to 10 μm.

12. The light-emitting device according to claim 9, characterized in that: Viewed from above, at least two rows of independently arranged metal layer arrays are arranged between two adjacent light-emitting units.

13. The light-emitting device according to claim 1, characterized in that: The melting point of the material with the nonpolar metal structure is higher than that of tin.

14. The light-emitting device according to claim 1, characterized in that: The materials of the nonpolar metal structure include Au, Al, Ti, Cu, Mo, or W.

15. The light-emitting device according to claim 1, characterized in that: The first and second pads are made of Au, the first and second electrodes are made of Sn, the non-polar metal structure is connected to the insulating layer, and the non-polar metal structure is made of a different material than the first electrode and the second electrode.

16. The light-emitting device according to claim 1, characterized in that: The first and second pads are made of Sn, the first and second electrodes are made of Au, the non-polar metal structure is connected to the driving substrate, and the non-polar metal structure is made of a different material than the first and second pads.

17. The light-emitting device according to claim 1, characterized in that: The thickness of the first pad and / or the second pad is in the range of 1~5μm, and the thickness of the first electrode and / or the second electrode is in the range of 1~5μm.

18. The light-emitting device according to claim 1, characterized in that: The second semiconductor layers of each of the light-emitting units are interconnected.

19. The light-emitting device according to claim 1, characterized in that: The second electrode includes a second connecting electrode and a second common electrode. The second connecting electrode has a mesh structure, and the second common electrode is arranged around the plurality of light-emitting units. The second connecting electrode is electrically connected to the second pad through the second common electrode.

20. A display device, characterized in that: The display device includes a light-emitting device as described in any one of claims 1 to 19.

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