Display panel and display device

Abstract

This application provides a display panel and a display device. The display panel includes a substrate, a plurality of first thin-film transistors (TFTs), an isolation layer, a plurality of light-emitting units (LEDs), a plurality of second thin-film transistors (TFTs), and a plurality of lens groups. The plurality of second thin-film transistors are correspondingly arranged with the plurality of LEDs to detect the intensity of light emitted by the corresponding LEDs and convert it into an electrical signal. The plurality of lens groups are correspondingly arranged with the plurality of second thin-film transistors; each lens group includes a first lens and a second lens; the first lens is disposed on the side of the corresponding second thin-film transistor facing the LED, and the second lens is disposed on the side of the corresponding second thin-film transistor facing away from the LED. The first and second lenses are used to focus the light incident on the second thin-film transistors. This display panel improves photoelectric conversion efficiency, further enhances light intensity, effectively improves the accuracy of brightness detection of the LEDs, and significantly improves the compensation accuracy of the LEDs.

Description

Technical Field

[0001] This application relates to the field of display technology, and more particularly to a display panel and a display device. Background Technology

[0002] Organic light-emitting diode (OLED) display panels may experience color distortion and uneven brightness due to inconsistent decay rates of the red, green, and blue light-emitting efficiencies caused by the aging of organic light-emitting materials.

[0003] Existing technologies typically employ algorithms based on Material Life Databases (MDLs) for compensation, but relying on mass production experimental data cannot accurately match the real-time aging state of a single panel. Meanwhile, the photoelectric sensor and the thin-film transistor (TFT) driving the pixel are integrated on the same layer. Due to layout space limitations, the sensor size is small, the signal accuracy is low, and the photoelectric conversion efficiency is low. The generated induced current cannot meet the requirements of high-precision detection, resulting in insufficient compensation accuracy. Summary of the Invention

[0004] The display panel and display device provided in this application are intended to solve the problem of insufficient compensation accuracy in existing OLED display panels.

[0005] To solve the above-mentioned technical problems, one technical solution adopted in this application is: to provide a display panel, comprising: Substrate; Multiple first thin-film transistors are disposed on one side of the substrate; An isolation layer is disposed on the side of the first thin-film transistor facing away from the substrate; Multiple light-emitting units are disposed on the side of the isolation layer opposite to the first thin-film transistor; and the first thin-film transistor is electrically connected to the light-emitting units for controlling the light-emitting units to emit light. A plurality of second thin-film transistors are disposed on the isolation layer, and the plurality of second thin-film transistors are disposed corresponding to the plurality of light-emitting units; the second thin-film transistors are used to detect the intensity of the light emitted by the corresponding light-emitting unit and convert it into an electrical signal; Multiple lens groups are configured corresponding to multiple second thin-film transistors; each lens group includes a first lens and a second lens; the first lens is disposed on the side of the corresponding second thin-film transistor facing the light-emitting unit, and the second lens is disposed on the side of the corresponding second thin-film transistor away from the light-emitting unit; the first lens and the second lens are used to focus the light rays incident on the second thin-film transistor.

[0006] In one specific embodiment, the isolation layer has a first groove on the side facing the light-emitting unit, and a second groove on the side facing away from the light-emitting unit; The first lens is disposed in the first groove; the second lens is disposed in the second groove.

[0007] In one specific embodiment, the bottom surface of the first groove and the top surface of the second groove are both arc surfaces; and the bottom surface of the first groove is in contact with the lower surface of the first lens, and the top surface of the second groove is in contact with the upper surface of the second lens.

[0008] In one specific embodiment, the thickness of the first lens is greater than or equal to 500 nanometers and less than or equal to 800 nanometers; the thickness of the second lens is greater than or equal to 300 nanometers and less than or equal to 600 nanometers. The radius of curvature of the first lens is greater than or equal to 1.5 micrometers and less than or equal to 5 micrometers; the radius of curvature of the second lens is greater than or equal to 1 micrometer and less than or equal to 4 micrometers.

[0009] In one specific embodiment, the second thin-film transistor includes a photoelectric semiconductor layer disposed within the isolation layer; Both the first lens and the second lens include a first refractive layer and a second refractive layer stacked together; the first refractive layer is disposed between the second refractive layer and the photoelectric semiconductor layer; wherein the refractive index of the first refractive layer is greater than the refractive index of the second refractive layer.

[0010] In one specific embodiment, the difference between the refractive index of the first refractive layer and the refractive index of the second refractive layer is greater than or equal to 0.4 and less than or equal to 0.6.

[0011] In one specific embodiment, the first refractive layer is a silicon nitride layer; the second refractive layer is a silicon oxide layer.

[0012] In one specific embodiment, the projection of the second thin-film transistor onto the substrate along the stacking direction of the display panel at least partially overlaps with the projection of the corresponding first thin-film transistor onto the substrate along the stacking direction of the display panel.

[0013] In one specific embodiment, the distance between the projection of the second thin-film transistor on the substrate along the stacking direction of the display panel and the projection of the corresponding light-emitting unit on the substrate along the stacking direction of the display panel is greater than or equal to 1 micrometer and less than or equal to 10 micrometers. The width of the second thin-film transistor is greater than or equal to 10 micrometers and less than or equal to 50 micrometers.

[0014] To solve the above-mentioned technical problems, one technical solution adopted in this application is: to provide a display device, comprising: Display panel; the display panel is any of the display panels described above; A control unit; one end of the control unit is electrically connected to the second thin-film transistor of the display panel for acquiring the electrical signal of the second thin-film transistor; the other end of the control unit is electrically connected to the first thin-film transistor of the display panel for outputting a drive signal to the first thin-film transistor; the control unit is configured to adjust the drive signal output to the first thin-film transistor according to the electrical signal of the second thin-film transistor.

[0015] The beneficial effects of this application's embodiments: Unlike existing technologies, this application provides a display panel including a substrate, a plurality of first thin-film transistors (TFTs), an isolation layer, a plurality of light-emitting units, a plurality of second TFTs, and a plurality of lens groups. The plurality of TFTs are disposed on one side of the substrate; the isolation layer is disposed on the side of the TFTs facing away from the substrate; the plurality of light-emitting units are disposed on the side of the isolation layer facing away from the TFTs; and the TFTs are electrically connected to the light-emitting units for controlling the light emission of the light-emitting units. The plurality of second TFTs are disposed on the isolation layer, and are correspondingly disposed with the plurality of light-emitting units; the second TFTs are used to detect the intensity of light emitted by the corresponding light-emitting unit and convert it into an electrical signal. The plurality of lens groups are correspondingly disposed with the plurality of second TFTs; each lens group includes a first lens and a second lens; the first lens is disposed on the side of the corresponding second TFT facing the light-emitting unit, and the second lens is disposed on the side of the corresponding second TFT facing away from the light-emitting unit. The first and second lenses are used to focus the light incident on the second TFTs. By integrating multiple second thin-film transistors (TFTs) corresponding to multiple light-emitting units into the display panel, and enabling these TFTs to accurately detect the light intensity emitted by the corresponding light-emitting units, precise compensation can be made based on the real-time aging status of different light-emitting units. Furthermore, by placing lens groups on both sides of the second TFTs, the first lens on the front of the second TFT focuses forward light, increasing light intensity, while the second lens on the back of the second TFT refocuses and recovers unused light transmitted through the second TFT, improving photoelectric conversion efficiency and further enhancing light intensity. This results in a significant increase in induced current, effectively improving the accuracy of brightness detection for the light-emitting units and greatly enhancing the compensation accuracy for the light-emitting units. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of a display panel provided in one embodiment of this application; Figure 2 for Figure 1 The image shown is a magnified view of point A on the display panel. Figure 3 for Figure 1 The diagram shows the optical path of the second thin-film transistor detecting light in the display panel. Figure 4 This is a schematic diagram of the structure of a display device provided in an embodiment of this application.

[0017] Explanation of icon numbers: 100-Display panel; 200-Control unit; 1-Substrate; 2-First thin-film transistor; 3-Isolation layer; 4-Light-emitting unit; 5-Second thin-film transistor; 6-Lens group; 31-First groove; 32-Second groove; 51-Photonic semiconductor layer; 61-First lens; 62-Second lens; 601-First refractive layer; 602-Second refractive layer. Detailed Implementation

[0018] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0019] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0020] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0021] The present application will now be described in detail with reference to the accompanying drawings and embodiments.

[0022] See Figure 1 , Figure 1 This is a schematic diagram of the structure of a display panel provided in an embodiment of this application. This application provides a display panel 100, which can be an OLED display panel for displaying images. Specifically, the display panel 100 may include a substrate 1, a plurality of first thin-film transistors 2, an isolation layer 3, a plurality of light-emitting units 4, a plurality of second thin-film transistors 5, and a plurality of lens groups 6.

[0023] The substrate 1 can be a glass substrate 1, used to support the display panel 100. A plurality of first thin-film transistors 2 are disposed on one side of the substrate 1; specifically, the first thin-film transistors 2 can be disposed on the surface of one side of the substrate 1, and the first thin-film transistors 2 can include a source, a drain, a semiconductor active layer, a gate, and a gate insulating layer. The specific structure and function of these structures are the same as the structure of TFTs in the prior art, and can be referred to the prior art for details, which will not be repeated here.

[0024] An isolation layer 3 is disposed on the side of the first thin-film transistor 2 facing away from the substrate 1, while multiple light-emitting units 4 are disposed on the side of the isolation layer 3 facing away from the first thin-film transistor 2. Each light-emitting unit 4 includes a stacked anode, a light-emitting layer, and a cathode. The first thin-film transistor 2 is electrically connected to the light-emitting unit 4 to control the light emission of the light-emitting unit 4. Specifically, the source or drain of the first thin-film transistor 2 is electrically connected to the anode of the light-emitting unit 4. The first thin-film transistor 2 controls whether to transmit an electrical signal to the anode by controlling the conduction of the gate-controlled semiconductor active layer, thereby controlling whether the light-emitting unit 4 emits light.

[0025] Multiple second thin-film transistors 5 are disposed on the isolation layer 3, and the multiple second thin-film transistors 5 are correspondingly disposed with multiple light-emitting units 4. The second thin-film transistors 5 are used to detect the intensity of the light emitted by the corresponding light-emitting unit 4 and convert it into an electrical signal, so as to determine whether the light-emitting unit 4 needs brightness compensation based on the electrical signal. Specifically, the number of second thin-film transistors 5 can be the same as the number of light-emitting units 4, that is, one second thin-film transistor 5 is correspondingly disposed with one light-emitting unit 4, and one second thin-film transistor 5 is only used to detect the light intensity of the corresponding one light-emitting unit 4. Alternatively, in other embodiments, the number of second thin-film transistors 5 can also be different from the number of light-emitting units 4, that is, one second thin-film transistor 5 is correspondingly disposed with multiple light-emitting units 4, and one second thin-film transistor 5 can be used to detect the light intensity of multiple corresponding light-emitting units 4.

[0026] By integrating multiple second thin-film transistors 5 corresponding to multiple light-emitting units 4 in the display panel 100, and enabling the second thin-film transistors 5 to accurately detect the light intensity emitted by the corresponding light-emitting unit 4, accurate compensation can be made according to the real-time aging state of different light-emitting units 4.

[0027] Combination Figure 1 and Figure 2 Specifically, the second thin-film transistor 5 may include a photoelectric semiconductor layer 51 disposed within the isolation layer 3; by disposing of the isolation layer 3, the influence of the anode and cathode of the light-emitting unit 4 on the photoelectric semiconductor layer 51 when energized can be shielded.

[0028] Multiple lens groups 6 are correspondingly arranged with multiple second thin-film transistors 5; specifically, each second thin-film transistor 5 is correspondingly provided with a lens group 6. Each lens group 6 includes a first lens 61 and a second lens 62; the first lens 61 is disposed on the side of the corresponding second thin-film transistor 5 facing the light-emitting unit 4, and the second lens 62 is disposed on the side of the corresponding second thin-film transistor 5 away from the light-emitting unit 4; the first lens 61 and the second lens 62 are used to focus the light rays incident on the second thin-film transistor 5.

[0029] Specifically, the light emitted by the light-emitting unit 4 is reflected by the encapsulation layer or other film layers on the light-emitting side towards the first lens 61, and then focused by the first lens 61 onto the photoelectric semiconductor layer 51 of the second thin film transistor 5. It can be understood that these light rays cannot be completely absorbed by the photoelectric semiconductor layer 51, and some light rays will pass through the photoelectric semiconductor layer 51 and be directed to the substrate 1 or other film layers on the backlight side. These light rays are reflected by the substrate 1 or other film layers towards the second lens 62, and then focused again by the second lens 62 onto the photoelectric semiconductor layer 51.

[0030] Existing photoelectric sensors typically employ a planar light incident structure. Due to insufficient light intensity, they cannot effectively excite carriers, resulting in a small equivalent channel width and low carrier mobility. This application's embodiment utilizes a bidirectional secondary focusing structure to increase the effective light intensity irradiated onto the photoelectric semiconductor layer 51 by 4-6 times. This significantly excites photogenerated carriers, leading to an exponential increase in carrier concentration and a corresponding significant improvement in carrier mobility. The carrier conduction range is comprehensively expanded, resulting in a substantial increase in the equivalent photosensitive TFT channel width.

[0031] Based on the formula for calculating the saturation current of a photosensitive TFT: Where I is the induced current in the saturation region of the photosensitive TFT ( u is the carrier mobility of the photoelectric semiconductor ( ); Gate oxide capacitance ( W represents the width of the photosensitive TFT channel (μm); L represents the length of the photosensitive TFT channel (μm). Gate-source drive voltage (V); The threshold voltage (V) of the photosensitive TFT.

[0032] By simultaneously increasing the carrier mobility u of the optoelectronic semiconductor and the channel width W of the photosensitive TFT, the induced current I can be directly increased by multiples, significantly improving the detection signal strength and achieving high-precision, fast-response detection with pixel-level brightness.

[0033] Specifically, in the embodiments of this application, , , , Substituting the values ​​into the calculation, we can obtain the current. Compared to traditional planar structure foundation current... and single-focus structure current The induced current generated in this embodiment is significantly improved.

[0034] In this embodiment, lens groups 6 are provided on both sides of the second thin-film transistor 5. The first lens 61 on the front of the second thin-film transistor 5 focuses the forward light, thereby increasing the light intensity. At the same time, the second lens 62 on the back of the second thin-film transistor 5 refocuses the unused light transmitted through the second thin-film transistor 5, thereby improving the photoelectric conversion efficiency, further increasing the light intensity, and significantly increasing the induced current. This effectively improves the accuracy of brightness detection of the light-emitting unit 4 and greatly improves the accuracy of compensation for the light-emitting unit 4.

[0035] See Figure 2 , Figure 2 for Figure 1The image shows a partial enlarged view of point A in the display panel. In a specific embodiment, the isolation layer 3 has a first groove 31 on the side facing the light-emitting unit 4, and a second groove 32 on the side facing away from the light-emitting unit 4; wherein, the first lens 61 is disposed in the first groove 31, and the second lens 62 is disposed in the second groove 32. By providing the first groove 31 and the second groove 32 on both sides of the isolation layer 3 to accommodate the lens group 6, the first lens 61 and the second lens 62 are integrated on the isolation layer 3, which is beneficial for miniaturization of the photoelectric sensor and thinning of the display panel 100.

[0036] Specifically, the first groove 31 is disposed on the side surface of the isolation layer 3 facing the light-emitting unit 4 along the stacking direction Y of the display panel 100, and extends away from the light-emitting unit 4 along the stacking direction Y. The second groove 32 is disposed on the side surface of the isolation layer 3 away from the light-emitting unit 4 along the stacking direction Y, and extends closer to the light-emitting unit 4 along the stacking direction Y. The first groove 31 and the second groove 32 are spaced apart along the stacking direction Y.

[0037] Specifically, the dimensions of the first groove 31 and the second groove 32 along the first direction X perpendicular to the stacking direction Y are greater than or equal to the dimensions of the photoelectric semiconductor layer 51 along the first direction X, so as to focus a sufficient amount of light onto the photoelectric semiconductor layer 51. The projection of the photoelectric semiconductor layer 51 along the stacking direction Y onto the substrate 1 lies within the projection of the first groove 31 or the second groove 32 along the stacking direction Y onto the substrate 1.

[0038] In a specific embodiment, the bottom surface of the first groove 31 and the top surface of the second groove 32 are both arc surfaces; and the bottom surface of the first groove 31 is in contact with the lower surface of the first lens 61, and the top surface of the second groove 32 is in contact with the upper surface of the second lens 62, so as to avoid the existence of air gaps between the first lens 61 and the isolation layer 3 and between the second lens 62 and the isolation layer 3, which would affect the focusing effect of the first lens 61 and the second lens 62 on light and reduce the light intensity irradiated on the photoelectric semiconductor layer 51.

[0039] Specifically, the bottom surface of the first groove 31 is an arc surface that bulges towards the substrate 1, and the depth of the first groove 31 gradually increases along the direction from the edge to the center. The top surface of the second groove 32 is an arc surface that bulges towards the light-emitting unit 4, and the depth of the second groove 32 gradually increases along the direction from the edge to the center.

[0040] Both the first lens 61 and the second lens 62 are concave and convex lenses. Specifically, the lower surface of the first lens 61 is convex, and the upper surface is concave; and the curvature of the upper surface of the first lens 61 is less than the curvature of the lower surface of the first lens 61. The upper surface of the second lens 62 is convex, and the lower surface is concave; and the curvature of the lower surface of the second lens 62 is less than the curvature of the upper surface of the second lens 62.

[0041] In a specific embodiment, the thickness 'a' of the first lens 61 is greater than or equal to 500 nanometers and less than or equal to 800 nanometers, so that while integrating the first lens 61 onto the isolation layer 3, the first lens 61 has sufficient thickness so that the focal length of the first lens 61 is long enough to achieve the predetermined focusing effect.

[0042] Specifically, the thickness 'a' of the first lens 61 refers to the center thickness of the first lens 61; the thickness 'a' of the first lens 61 can be any value among 500 nanometers, 550 nanometers, 600 nanometers, 650 nanometers, 700 nanometers, 750 nanometers, and 800 nanometers.

[0043] The radius of curvature of the first lens 61 is greater than or equal to 1.5 micrometers and less than or equal to 5 micrometers; this allows the first lens 61 to have a longer focal length with a smaller thickness, thus meeting the requirements for focusing light. Specifically, the radius of curvature of the first lens 61 can be any value among 1.5 micrometers, 2 micrometers, 3 micrometers, 4 micrometers, and 5 micrometers.

[0044] The thickness b of the second lens 62 is greater than or equal to 300 nanometers and less than or equal to 600 nanometers; this ensures that while integrating the second lens 62 onto the insulating layer 3, the second lens 62 has sufficient thickness to achieve a sufficiently long focal length, thereby achieving the predetermined focusing effect. Specifically, the thickness b of the second lens 62 refers to the center thickness of the second lens 62; the thickness b of the second lens 62 can be any value among 300 nanometers, 350 nanometers, 400 nanometers, 450 nanometers, 500 nanometers, 550 nanometers, and 600 nanometers.

[0045] The radius of curvature of the second lens 62 is greater than or equal to 1 micrometer and less than or equal to 4 micrometers, so that the second lens 62 can have a long focal length with a small thickness dimension, thus meeting the requirements for focusing light. Specifically, the radius of curvature of the second lens 62 can be any value among 1 micrometer, 2 micrometers, 3 micrometers, and 4 micrometers.

[0046] Continue reading Figure 2 In a specific embodiment, the second thin-film transistor 5 includes a photoelectric semiconductor layer 51 and two detection circuits 52 electrically connected through the photoelectric semiconductor layer 51. The photoelectric semiconductor layer 51 is disposed within the isolation layer 3, and the two detection circuits 52 are respectively disposed on both sides of the photoelectric semiconductor layer 51.

[0047] The first lens 61 includes a first refractive layer 601 and a second refractive layer 602 stacked along the stacking direction Y of the display panel 100; the first refractive layer 601 is disposed between the second refractive layer 602 and the photoelectric semiconductor layer 51; wherein the refractive index of the first refractive layer 601 is greater than the refractive index of the second refractive layer 602. By setting the first lens 61 to a structure of stacked high-refractive-index material and low-refractive-index material, light is refracted again by the first refractive layer 601 with a higher refractive index after being refracted by the second refractive layer 602 with a lower refractive index. Utilizing the difference in refractive indices of the two materials, the diffused light is precisely focused onto the core region of the photosensitive channel of the photoelectric semiconductor layer 51 for the first time; thereby further improving the focusing effect of the first lens 61 on light and increasing the intensity of light illuminating the photoelectric semiconductor layer 51.

[0048] Specifically, the first refractive layer 601 of the first lens 61 is disposed on the bottom wall of the first groove 31, and the second refractive layer 602 of the first lens 61 is disposed in close contact with the upper surface of the first refractive layer 601.

[0049] The second lens 62 may also include a first refractive layer 601 and a second refractive layer 602 stacked along the stacking direction Y of the display panel 100, so that the light reflected back to the photoelectric semiconductor layer 51 by the substrate 1 is focused for the second time on the core region of the photosensitive channel of the photoelectric semiconductor layer 51 after two consecutive refractions, thereby further improving the focusing effect of the second lens 62 on the light.

[0050] Specifically, the first refractive layer 601 of the second lens 62 is disposed on the top wall of the second groove 32, and the second refractive layer 602 of the second lens 62 is disposed in close contact with the lower surface of the first refractive layer 601.

[0051] In a specific embodiment, the difference between the refractive index of the first refractive layer 601 and the refractive index of the second refractive layer 602 is greater than or equal to 0.4 and less than or equal to 0.6; this is to avoid the problem of insufficient refractive efficiency caused by too small a difference in refractive index, and at the same time, it can also avoid the problem of enhanced light scattering caused by too large a difference in refractive index.

[0052] Specifically, the difference between the refractive index of the first refractive layer 601 and the refractive index of the second refractive layer 602 can be any value among 0.4, 0.45, 0.5, 0.55, and 0.6.

[0053] In a specific embodiment, the first refractive layer 601 can be a silicon nitride layer; the second refractive layer 602 can be a silicon oxide layer. The refractive index of the silicon nitride layer is 2.0, and the refractive index of the silicon oxide layer is 1.5. By setting the difference between the refractive indices of the first refractive layer 601 and the second refractive layer 602 to 0.5, the light undergoes moderate and concentrated refraction, effectively focusing it onto the photosensitive channel region of the photoelectric semiconductor layer 51.

[0054] like Figure 1 As shown, in a specific embodiment, the second thin-film transistor 5 is layered with the first thin-film transistor 2, and the projection of the second thin-film transistor 5 onto the substrate 1 along the stacking direction Y of the display panel 100 at least partially overlaps with the projection of the corresponding first thin-film transistor 2 onto the substrate 1 along the stacking direction Y of the display panel 100. This reduces the layout conflict between the first thin-film transistor 2 and the second thin-film transistor 5 on a plane perpendicular to the display panel 100, thereby reducing the occupation of the display area and effectively improving the aperture ratio of the display panel 100. Simultaneously, by layering with the first thin-film transistor 2, the size restrictions on the second thin-film transistor 5 are relaxed, thereby improving the signal acquisition accuracy of the second thin-film transistor 5.

[0055] Specifically, the projection of the second thin-film transistor 5 onto the substrate 1 can completely overlap with the projection of the corresponding first thin-film transistor 2 onto the substrate 1.

[0056] like Figure 1 As shown, in a specific embodiment, the distance c between the projection of the second thin-film transistor 5 on the substrate 1 along the stacking direction Y of the display panel 100 and the projection of the corresponding light-emitting unit 4 on the substrate 1 along the stacking direction Y of the display panel 100 is greater than or equal to 1 micrometer and less than or equal to 10 micrometers; so that the light passing between the second thin-film transistor 5 and the light-emitting unit 4 is reflected by the substrate 1 and can be focused onto the photoelectric semiconductor layer 51 by the second lens 62, thereby improving the light utilization rate and further improving the light intensity irradiated on the photoelectric semiconductor layer 51, effectively improving the detection accuracy.

[0057] Combination Figure 1 and Figure 3 , Figure 3 for Figure 1The diagram shows the optical path of the second thin-film transistor in the display panel for detecting light. It can be understood that the light emitted by the light-emitting unit 4 is mainly emitted perpendicularly along the stacking direction Y, with some light rays obliquely incident on the film layers above the light-emitting unit 4, and some of these rays are reflected back into the display panel 100. Of these reflected rays, some directly illuminate the second thin-film transistor 5, thus being utilized by the second thin-film transistor 5 to detect the intensity of these rays; the remaining light rays pass through the gap between the second thin-film transistor 5 and the light-emitting unit 4, as well as through the side of the second thin-film transistor 5 away from the light-emitting unit 4 along the first direction X, and are therefore unusable.

[0058] During the simulation, the applicant discovered that if the distance c between the projection of the second thin-film transistor 5 on the substrate 1 and the projection of the corresponding light-emitting unit 4 on the substrate 1 is too large, that is, if the gap between the second thin-film transistor 5 and the light-emitting unit 4 is too wide, most of the reflected light will pass through the gap between the two and cannot be directly utilized by the second thin-film transistor 5. Even if the light that passes through the gap can be reflected back to the second thin-film transistor 5 by the film layer below, it will still cause light loss and greatly reduce the light utilization rate.

[0059] If the distance c between the projection of the second thin-film transistor 5 on the substrate 1 and the projection of the corresponding light-emitting unit 4 on the substrate 1 is too small, that is, the gap between the second thin-film transistor 5 and the light-emitting unit 4 is small, most of the light in the reflected light may pass through the side of the second thin-film transistor 5 away from the light-emitting unit 4 along the first direction X, and it will be difficult to be utilized by the second thin-film transistor 5, which will also greatly reduce the light utilization rate.

[0060] In this embodiment, the distance c between the projection of the second thin-film transistor 5 on the substrate 1 and the projection of the corresponding light-emitting unit 4 on the substrate 1 is controlled within a certain range. This ensures that most of the reflected light directly illuminates the second thin-film transistor 5, and most of the light that is not directly illuminated is reflected back to the second thin-film transistor 5 after passing through the gap between the second thin-film transistor 5 and the light-emitting unit 4. Only a very small amount of light passes through the second thin-film transistor 5 along the first direction X away from the light-emitting unit 4. In this way, the reflected light is utilized to the maximum extent, further improving the light intensity illuminating the photoelectric semiconductor layer 51 and effectively improving the detection accuracy.

[0061] Specifically, the distance c between the projection of the second thin-film transistor 5 along the stacking direction Y onto the substrate 1 and the projection of the corresponding light-emitting unit 4 along the stacking direction Y onto the substrate 1 can be any value among 1 micrometer, 2 micrometer, 5 micrometer, 8 micrometer, and 10 micrometer.

[0062] Specifically, the width d of the second thin-film transistor 5 is greater than or equal to 10 micrometers and less than or equal to 50 micrometers to receive more light. Specifically, the width d of the second thin-film transistor 5 can be any value among 10 micrometers, 20 micrometers, 30 micrometers, 40 micrometers, and 50 micrometers.

[0063] This application provides a display panel 100, including a substrate 1, a plurality of first thin-film transistors 2, an isolation layer 3, a plurality of light-emitting units 4, a plurality of second thin-film transistors 5, and a plurality of lens groups 6. The plurality of first thin-film transistors 2 are disposed on one side of the substrate 1; the isolation layer 3 is disposed on the side of the first thin-film transistors 2 facing away from the substrate 1; the plurality of light-emitting units 4 are disposed on the side of the isolation layer 3 facing away from the first thin-film transistors 2; and the first thin-film transistors 2 are electrically connected to the light-emitting units 4 for controlling the light-emitting units 4 to emit light. The plurality of second thin-film transistors 5 are disposed on the isolation layer 3, and the plurality of second thin-film transistors 5 are correspondingly disposed to the plurality of light-emitting units 4; the second thin-film transistors 5 are used to detect the intensity of the light emitted by the corresponding light-emitting unit 4 and convert it into an electrical signal. The plurality of lens groups 6 are correspondingly disposed to the plurality of second thin-film transistors 5; each lens group 6 includes a first lens 61 and a second lens 62; the first lens 61 is disposed on the side of the corresponding second thin-film transistor 5 facing the light-emitting unit 4, and the second lens 62 is disposed on the side of the corresponding second thin-film transistor 5 facing away from the light-emitting unit 4. The first lens 61 and the second lens 62 are used to focus the light incident on the second thin-film transistor 5. By integrating multiple second thin-film transistors 5 corresponding to multiple light-emitting units 4 into the display panel 100, and enabling the second thin-film transistors 5 to accurately detect the light intensity emitted by the corresponding light-emitting unit 4, accurate compensation can be made according to the real-time aging state of different light-emitting units 4. Furthermore, by setting lens groups 6 on both sides of the second thin-film transistors 5, the first lens 61 on the front of the second thin-film transistor 5 focuses the forward light, increasing the light intensity, while the second lens 62 on the back of the second thin-film transistor 5 refocuses and recovers unused light transmitted through the second thin-film transistor 5, improving photoelectric conversion efficiency, further increasing light intensity, and significantly increasing the induced current. This effectively improves the accuracy of brightness detection of the light-emitting unit 4 and greatly enhances the compensation accuracy of the light-emitting unit 4.

[0064] See Figure 4 , Figure 4This is a schematic diagram of a display device provided according to an embodiment of this application. This application provides a display device for displaying an image. The display device may include a display panel 100 and a control unit 200. The display panel 100 is the display panel 100 as described in any of the above embodiments; one end of the control unit 200 is electrically connected to a second thin-film transistor 5 of the display panel 100, for acquiring the electrical signal of the second thin-film transistor 5; the other end of the control unit 200 is electrically connected to a first thin-film transistor 2 of the display panel 100, for outputting a drive signal to the first thin-film transistor 2; the control unit 200 is configured to adjust the drive signal output to the corresponding first thin-film transistor 2 according to the electrical signal of the second thin-film transistor 5.

[0065] Thus, the brightness of the light emitted by the corresponding light-emitting unit 4 is detected by the second thin-film transistor 5, and the light signal is converted into an electrical signal and transmitted to the control unit 200. The control unit 200 adjusts the driving signal of the first thin-film transistor 2 in real time through a preset voltage compensation model, so that the actual light emission brightness of the light-emitting unit 4 is consistent with the target brightness, thereby achieving precise compensation for the light-emitting unit 4.

[0066] Specifically, the process of the second thin-film transistor 5 detecting the corresponding light-emitting unit 4 is strictly synchronized with the refresh rate of the display panel 100 to ensure that the acquired brightness data can reflect the light-emitting state of each pixel in the current frame in real time, providing a highly timely input for subsequent processing.

[0067] The specific workflow of the display device provided in this application embodiment is as follows: First, the control unit 200 compares the actual brightness data of each light-emitting unit 4 collected with the theoretical target brightness data corresponding to the input image signal pixel by pixel. Through a specific algorithm, the brightness deviation value of each light-emitting unit 4 is calculated, and based on this, a pixel-level aging deviation matrix covering the entire display area is constructed, which accurately quantifies the uneven degradation of the panel.

[0068] Then, based on the aging deviation matrix, the control unit 200 calls the preset voltage compensation model to perform real-time and independent fine-tuning of the driving voltage applied to each light-emitting unit 4 by the first thin-film transistor 2.

[0069] For light-emitting units 4 whose aging deviation exceeds a preset threshold, the control unit 200 uses a dynamic compensation algorithm to further optimize the driving voltage parameters, thereby effectively eliminating color deviation caused by different decay rates of light-emitting units 4 of different colors.

[0070] Specifically, to adapt to the long-term, slow degradation characteristics of OLED light-emitting materials over time, the control unit 200 periodically performs self-calibration and iterative updates on the parameters of the core voltage compensation model based on the accumulated aging monitoring data of the panel. This ensures that the compensation algorithm can continuously track the aging trend of the material, thereby maintaining a stable and consistent compensation effect throughout the entire life cycle of the panel.

[0071] The above are merely embodiments of this application and do not limit the scope of this patent application. Any equivalent structural or procedural changes made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A display panel, characterized in that, include: Substrate; Multiple first thin-film transistors are disposed on one side of the substrate; An isolation layer is disposed on the side of the first thin-film transistor facing away from the substrate; Multiple light-emitting units are disposed on the side of the isolation layer opposite to the first thin-film transistor; and the first thin-film transistor is electrically connected to the light-emitting units for controlling the light-emitting units to emit light. A plurality of second thin-film transistors are disposed on the isolation layer, and the plurality of second thin-film transistors are disposed corresponding to the plurality of light-emitting units; The second thin-film transistor is used to detect the intensity of the light emitted by the corresponding light-emitting unit and convert it into an electrical signal; Multiple lens groups are configured corresponding to multiple second thin-film transistors; each lens group includes a first lens and a second lens; the first lens is disposed on the side of the corresponding second thin-film transistor facing the light-emitting unit, and the second lens is disposed on the side of the corresponding second thin-film transistor away from the light-emitting unit; the first lens and the second lens are used to focus the light rays incident on the second thin-film transistor.

2. The display panel according to claim 1, characterized in that, The isolation layer has a first groove on the side facing the light-emitting unit, and a second groove on the side facing away from the light-emitting unit; The first lens is disposed in the first groove; the second lens is disposed in the second groove.

3. The display panel according to claim 2, characterized in that, The bottom surface of the first groove and the top surface of the second groove are both arc surfaces; and the bottom surface of the first groove is in contact with the lower surface of the first lens, and the top surface of the second groove is in contact with the upper surface of the second lens.

4. The display panel according to claim 2, characterized in that, The thickness of the first lens is greater than or equal to 500 nanometers and less than or equal to 800 nanometers; the thickness of the second lens is greater than or equal to 300 nanometers and less than or equal to 600 nanometers. The radius of curvature of the first lens is greater than or equal to 1.5 micrometers and less than or equal to 5 micrometers; the radius of curvature of the second lens is greater than or equal to 1 micrometer and less than or equal to 4 micrometers.

5. The display panel according to claim 1, characterized in that, The second thin-film transistor includes a photoelectric semiconductor layer disposed within the isolation layer; Both the first lens and the second lens include a first refractive layer and a second refractive layer stacked together; the first refractive layer is disposed between the second refractive layer and the photoelectric semiconductor layer; wherein the refractive index of the first refractive layer is greater than the refractive index of the second refractive layer.

6. The display panel according to claim 5, characterized in that, The difference between the refractive index of the first refractive layer and the refractive index of the second refractive layer is greater than or equal to 0.4 and less than or equal to 0.

6.

7. The display panel according to claim 6, characterized in that, The first refractive layer is a silicon nitride layer; the second refractive layer is a silicon oxide layer.

8. The display panel according to claim 1, characterized in that, The projection of the second thin-film transistor onto the substrate along the stacking direction of the display panel at least partially overlaps with the projection of the corresponding first thin-film transistor onto the substrate along the stacking direction of the display panel.

9. The display panel according to claim 1, characterized in that, The distance between the projection of the second thin-film transistor onto the substrate along the stacking direction of the display panel and the projection of the corresponding light-emitting unit onto the substrate along the stacking direction of the display panel is greater than or equal to 1 micrometer and less than or equal to 10 micrometers. The width of the second thin-film transistor is greater than or equal to 10 micrometers and less than or equal to 50 micrometers.

10. A display device, characterized in that, include: Display panel; The display panel is the display panel as described in any one of claims 1-9; Control unit; One end of the control unit is electrically connected to the second thin-film transistor of the display panel for acquiring the electrical signal of the second thin-film transistor; the other end of the control unit is electrically connected to the first thin-film transistor of the display panel for outputting a drive signal to the first thin-film transistor. The control unit is configured to adjust the drive signal output to the first thin-film transistor according to the electrical signal of the second thin-film transistor.

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