A method for low-temperature solution continuous preparation of perovskite-crystalline silicon tandem solar cells

Abstract

This invention discloses a low-temperature solution continuous fabrication method for perovskite-crystalline silicon tandem solar cells. The substrate continuously enters a low-temperature solution coating station to form a wet film layer. Online data acquisition is performed on the wet film layer to obtain changes in surface reflection, film surface flow, edge retraction, and drying uniformity, which are then converted into state characterization values. The film layer stability result is obtained through weighted calculation, and a dynamic control threshold is generated by combining factors such as transmission speed and effective dwell length. Based on this, release, retention, or delayed connection commands are output, and in-situ adjustment, retesting, and state reshaping are implemented for unstable regions. This method can determine the timing of process advancement based on the actual stable state of the film layer, reducing the inheritance and amplification of local fluctuations in continuous fabrication, and improving continuous film formation stability, connection consistency, and device performance.

Description

Technical Field

[0001] This invention relates to the field of continuous solar cell fabrication technology, and in particular to a low-temperature solution continuous fabrication method for perovskite-crystalline silicon tandem solar cells. Background Technology

[0002] In existing technologies, the fabrication of perovskite-silicon tandem solar cells typically aims to complete the deposition of the upper perovskite thin film without damaging the crystalline silicon substrate and its functional layers. Therefore, the low-temperature solution method has gradually become a more popular technical route. Under static preparation conditions in the laboratory, operators can gradually spread the precursor solution on the substrate surface, allow the solvent to evaporate, and solidify the film by slowing down the operation speed, extending the dwell time, or manually observing changes in the film. Therefore, even if there is a slight delay at a certain stage, there is often still a chance to recover to a relatively stable state before the next step of processing.

[0003] However, under continuous preparation conditions, the process is no longer determined by the actual state of a single sample, but by the continuous cycle of the entire production line. After the precursor solution is spread, it is continuously transported to the next station, and the process of the film layer changing from a wet state to a stable solid state must be completed within a limited time. As a result, a situation that is easily overlooked in the prior art arises: the surface of the film layer appears to have basically formed, but the solvent withdrawal, component distribution, and structural stabilization processes inside are not actually completed. If subsequent stations continue to transport, contact, or reprocess the film at this time, it is easy to further fix the originally temporary unstable state.

[0004] More seriously, this problem often does not only occur at one location in continuous preparation, but also repeatedly occurs in the preceding and following sections with the same operating cycle, causing small local deviations to gradually evolve into consistency problems throughout the entire process. It can be seen that the key deficiency of the existing technology is not just that the film layer itself is difficult to form, but that there is a lack of effective matching between the timing of process advancement and the actual stable state of the material.

[0005] Ultimately, the core problem can be summarized as follows: existing low-temperature solution continuous preparation methods mainly proceed with each process according to a preset rhythm, and cannot determine when to proceed to the next step based on whether the film layer has truly stabilized. This results in unstable film layers being sent to subsequent work stations prematurely, and gradually accumulating and amplifying into inconsistencies that affect the performance of tandem batteries during continuous transfer.

[0006] To address these issues, we propose a low-temperature solution-based continuous fabrication method for perovskite-crystalline silicon tandem solar cells. Summary of the Invention

[0007] The purpose of this invention is to address the problems in existing technologies where perovskite tandem wet films are prone to prematurely entering a state unsuitable for subsequent processing due to factors such as transport cycle time, local dwell conditions, and inherited fluctuations from previous processes. This leads to issues like residual flow within the film, edge shrinkage and expansion, uneven drying, accumulated film surface undulations, and repeated amplification of previous deviations in subsequent workstations. The invention proposes a low-temperature solution-based continuous preparation method for perovskite-crystalline silicon tandem solar cells. This method enables online identification, zoning, differentiated release, closed-loop adjustment, and state reshaping of the continuous wet film state, thereby improving the stability of continuous film formation and the consistency of subsequent workstation processes.

[0008] To achieve the above objectives, the present invention adopts the following technical solution: A method for continuous low-temperature solution preparation of perovskite-crystalline silicon tandem solar cells, characterized by comprising the following steps: S1. The substrate with the formed crystalline silicon bottom cell and its lower functional layer is continuously fed into the low temperature solution coating station at a preset transmission speed. The perovskite precursor liquid is continuously supplied to the substrate surface, and the perovskite precursor liquid is controlled to spread along the transmission direction on the substrate surface to form a continuous wet film layer. At the same time, the current transmission speed, the effective dwell length of the corresponding station and the initial formation position of the corresponding wet film layer are recorded. S2. When the wet film layer leaves the coating station and enters the state acquisition area, the wet film layer is acquired online to obtain the surface reflection change, film flow change, edge retraction change and drying uniformity change at the corresponding detection position. The surface reflection change, film flow change, edge retraction change and drying uniformity change are converted into state characterization values ​​that reflect the degree of wet film layer shaping. S3. The state characterization values ​​of each detection position are weighted and calculated to obtain the membrane stability result of the corresponding detection position. Among them, the state characterization values ​​with high membrane disturbance sensitivity are given higher weights, and the state characterization values ​​with low membrane disturbance sensitivity are given lower weights. The dynamic pipe connection threshold of the corresponding detection position is calculated based on the recorded current transmission speed and the effective dwell length of the corresponding station. S4. Compare the membrane stability result with the dynamic control threshold. If the membrane stability result is not lower than the dynamic control threshold, determine that the wet membrane at the corresponding detection position has reached the state of continuous processing and output a release command to allow the corresponding area to enter the next station. If the membrane stability result is lower than the dynamic control threshold, determine that the wet membrane at the corresponding detection position is in an unstable state and output a retention command to prevent the corresponding area from directly entering the next station. S5. Perform in-situ adjustment processing on the unstable region of the output retention command. The in-situ adjustment processing includes reducing the transmission speed per unit length of the unstable region to increase the actual residence time, and implementing controlled solvent removal operation and membrane surface gentle leveling operation on the unstable region to reduce solvent residue, suppress intra-membrane flow and reduce local surface undulations, so as to obtain the adjusted region to be retested. S6. For the area to be retested, online data acquisition, state characterization value conversion, weighted calculation, and dynamic control threshold comparison are performed again. When the obtained membrane stability result is not lower than the recalculated dynamic control threshold, a release command is output to allow the area to be retested to enter the next station. When the obtained membrane stability result is still lower than the recalculated dynamic control threshold, in-situ adjustment processing is continued until the area to be retested reaches a state that can be processed. S7. Before entering the next workstation, the region that has been issued a release command is subjected to state reshaping. State reshaping is used to reduce the inherited impact of previous local fluctuations on subsequent continuous preparation sections. The region after state reshaping is continuously sent to the subsequent functional layer construction workstation or the subsequent perovskite layer shaping workstation. The above detection, calculation, comparison, adjustment, retesting and release process is repeated until the continuous construction of the perovskite layer and its upper functional layer is completed, and the perovskite-crystalline silicon tandem solar cell is obtained.

[0009] Preferably, in step S1, the substrate can be input into the transmission mechanism and continuously moved according to the set transmission direction and preset transmission speed. The amount of precursor liquid supplied per unit time is calculated in combination with the target coating width and preset wet film thickness. Then, the perovskite precursor liquid is continuously output according to the amount of precursor liquid supplied per unit time to form a continuous liquid phase deposition zone. After applying a spreading action along the transmission direction to the continuous liquid phase deposition zone, the position where the foremost end reaches a continuous coverage state is determined as the current spreading front.

[0010] During the continuous movement of the substrate, the current spreading front is repeatedly collected and updated according to a preset update cycle or preset displacement increment; the initial formation time of the initial spreading boundary is taken as the initial formation time of the wet film, and the effective dwell length of each corresponding area is calculated by combining the preset transmission speed and the real-time spreading front update results; then, the continuous wet film layer is divided into multiple continuous partitions according to the set transmission direction, and partition coding information is generated based on the initial formation time of the wet film, the position of the initial spreading boundary, the position of the real-time spreading front, and the effective dwell length of each continuous partition, so that each continuous partition has a unique area identifier that corresponds one-to-one with its initial formation position.

[0011] Preferably, in step S2, the continuous wet film layer entering the state acquisition area can be divided into multiple continuous detection zones according to the set transmission direction, and the initial formation position information, current transmission speed and effective dwell length corresponding to each continuous detection zone can be read as the acquisition reference; the time interval or displacement interval between two adjacent online acquisitions can be set according to the current transmission speed, thereby determining the previous acquisition time and the current acquisition time.

[0012] At two acquisition times, membrane surface reflection state data, membrane surface flow trajectory data, membrane surface boundary state data, and membrane surface drying state data are acquired respectively. The changes in surface reflection, membrane surface flow, edge retraction, and drying uniformity are calculated by the time difference between the two acquisition times. The above changes are then matched with corresponding preset reference intervals. A first state value is assigned when the value falls into a stable or controlled interval, a second state value is assigned when the value falls into a transition interval, and a third state value is assigned when the value falls into an abnormal interval. The reflection state value, flow state value, retraction state value, and drying state value are then partitioned and correlated for output, so that each continuous detection partition forms a state value group corresponding to its initial formation position information.

[0013] Preferably, in step S2, the membrane surface reflection state data can be acquired using a line scan camera, an area scan camera, a reflected light intensity detection unit, or an equivalent optical detection unit; the membrane surface flow trajectory data can be acquired using feature texture tracking, marker point displacement detection, edge trajectory recognition, or equivalent displacement recognition; the membrane surface boundary state data can be acquired using image edge extraction, contour recognition, or equivalent boundary recognition; and the membrane surface drying state data can be acquired using infrared thermal response, grayscale distribution dispersion, scattering differences, local temperature field changes, or equivalent drying characterization signals. All types of detection signals are synchronously associated with the partition positions of the continuous detection zones to ensure the traceability of different partition state value groups.

[0014] Preferably, in step S3, the reflection state value, flow state value, retraction state value, and drying state value corresponding to each continuous detection zone can be read first, as well as the current transmission speed, effective dwell length, real-time spreading front position, and zone position of the corresponding continuous detection zone; then, the current dominant deviation type can be determined according to the combination relationship between the state value and the real-time spreading front position, effective dwell length, and zone position; then, the reflection weight, flow weight, retraction weight, and drying weight corresponding to each continuous detection zone can be determined according to the current dominant deviation type, and the sum of each weight can be kept at a preset total weight value; then, the reflection state value, flow state value, retraction state value, and drying state value are multiplied by the corresponding weight and accumulated to obtain the initial membrane stability value; finally, the initial membrane stability value is jointly corrected by combining the current transmission speed, effective dwell length, real-time spreading front position, and zone position to obtain the regional membrane stability result, and speed correction, dwell correction, front correction, and position correction are performed based on the preset basic access threshold to obtain the dynamic access threshold for each continuous detection zone.

[0015] Furthermore, in order to provide a clear calculation basis for the formation process of the membrane stability result and the dynamic nozzle threshold, for any continuous detection zone, let its reflection state value be A1, flow state value be A2, retraction state value be A3, and dry state value be A4, with corresponding reflection weights of B1, flow weights of B2, retraction weights of B3, and dry weights of B4, where the sum of B1, B2, B3, and B4 is 1. Then the initial membrane stability value S0 can be expressed as: S0 = A1 × B1 + A2 × B2 + A3 × B3 + A4 × B4.

[0016] In one embodiment, the first state value is 1.0, the second state value is 0.5, and the third state value is 0, so the value range of S0 is 0 to 1.

[0017] When at least one of the flow state value, dry state value, retraction state value, and reflection state value corresponds to a second or third state value, the dominant deviation type is identified by combining the effective residence length, real-time spreading front position, and partition position. Specifically, when the flow state value corresponds to a second or third state value and the real-time spreading front position is within the front fluctuation range, it can be determined that the flow deviation is dominant; when the dry state value corresponds to a second or third state value and the effective residence length is lower than the preset residence length lower limit, it can be determined that the dry deviation is dominant; when the retraction state value corresponds to a second or third state value and the partition position is within the preset boundary range on the edge side, it can be determined that the retraction deviation is dominant; when the reflection state value corresponds to a second or third state value and the flow state value, retraction state value, and dry state value are all first state values, it can be determined that the reflection deviation is dominant.

[0018] After identifying the dominant bias type, the weight of the dominant term is increased, and the weights of the remaining non-dominant terms are compressed proportionally. After adjustment, the total weight conservation condition is still satisfied.

[0019] Furthermore, after obtaining the initial membrane stability value S0, a velocity correction term C1, a dwell time correction term C2, a leading edge correction term C3, and a position correction term C4 can be introduced to jointly correct the initial membrane stability value, thereby obtaining the regional membrane stability result S, where: S=S0+C1+C2+C3+C4.

[0020] Among them, the velocity correction term C1 reflects the impact of the current transmission velocity on the evaluation of the film layer's shape retention; the dwell time correction term C2 reflects the compensating effect of the effective dwell time length on the film layer's stability; the leading edge correction term C3 reflects the fluctuation risk in the region adjacent to the real-time spreading leading edge; and the position correction term C4 reflects the difference risk between the edge-side zones, the central main film-forming zones, and the transition zones. These correction terms can be determined using piecewise functions, proportional functions, lookup table functions, or preset mapping relationships.

[0021] Corresponding to the regional membrane stability results, the dynamic control threshold T can be formed based on the basic control threshold T0: T = T0 + D1 + D2 + D3 + D4.

[0022] Among them, D1 is the velocity threshold correction term, D2 is the dwell time threshold correction term, D3 is the leading edge position threshold correction term, and D4 is the partition position threshold correction term. When the transmission speed increases, the effective dwell time decreases, or the continuously detected partition is located in the vicinity of the real-time spreading leading edge or in a high-risk position at the edge, the corresponding correction term takes a positive value to increase the dynamic takeover threshold. When the transmission speed decreases, the effective dwell time increases, or the partition is located in the central stable region, the corresponding correction term takes a zero or negative value to decrease the dynamic takeover threshold. Each correction term is limited within a preset floating range to keep the regional membrane stability results and the dynamic takeover threshold within a comparable range.

[0023] Preferably, the weight determination in step S3 may further include comparing the changes in surface reflection, membrane flow, edge retraction, and drying uniformity corresponding to each continuous detection zone with the corresponding preset sensitive reference intervals to determine the reflection sensitivity level, flow sensitivity level, retraction sensitivity level, and drying sensitivity level; determining the initial weights for reflection, flow, retraction, and drying based on each sensitivity level; jointly verifying the initial weights for flow and drying with the real-time spreading front position, the initial weights for drying with the effective residence length, the initial weights for retraction with the zone position, and the initial weights for reflection with the flow sensitivity level, retraction sensitivity level, and drying sensitivity level to obtain the correction weights for reflection, flow, retraction, and drying; finally, performing total weight constraint correction on each correction weight to obtain the final reflection weight, final flow weight, final retraction weight, and final drying weight that satisfy the total weight conservation condition, and feeding them back for calculating the regional membrane stability results.

[0024] Preferably, in step S4, the regional-level membrane stability result, dynamic connection threshold, partition position, real-time spreading front position, and comparison status of adjacent continuous detection partitions corresponding to each continuous detection partition can be read first; then, the difference between the regional-level membrane stability result and the dynamic connection threshold can be calculated for each continuous detection partition to obtain the stability judgment difference, and the continuous detection partitions can be divided into qualified partitions and unqualified partitions accordingly; for regions that are in a continuous arrangement and whose adjacent continuous detection partitions are all qualified partitions, when the difference between the regional-level membrane stability results of adjacent continuous detection partitions does not exceed the preset difference range, it is determined as a region that can be directly connected and a release command is output. For non-compliant zones, when the difference in regional membrane stability between the zone and the adjacent compliant zone exceeds a preset difference range or when the zone is located in the vicinity of the real-time spreading front, a retention instruction is output and the zone is marked as an area to be adjusted. For critical zones located between directly connectable zones and areas to be adjusted, when the regional membrane stability is not lower than the dynamic takeover threshold but the stability difference between the zone and the area to be adjusted exceeds a preset transition range, a delayed takeover instruction is output to keep the zone in the current station's pending takeover state. The release instruction, retention instruction, and delayed takeover instruction are then correlated and output according to the zone position corresponding to the continuously detected zones to form the zone release result of the current continuous wet membrane layer.

[0025] Preferably, in step S5, the release command, retention command, or delayed continuation command corresponding to each continuous detection partition can be read first, and the partition position, current transmission speed, and command status of adjacent continuous detection partitions corresponding to each continuous detection partition can be read; for continuous detection partitions corresponding to release commands, adjacent continuous detection partitions that continuously output release commands are merged into a release area, and the release area is controlled to continuously enter the next station at the current transmission speed; for continuous detection partitions corresponding to retention commands, their corresponding area is controlled to remain within the current station and stop entering the next station, and the current position and current partition boundary are locked, while marking it as a retention area and outputting it to the in-situ adjustment process; for continuous detection partitions corresponding to delayed continuation commands, their corresponding area is controlled to remain in the current station waiting-to-be-connected state and not directly enter the next station.

[0026] Furthermore, for each retention area, the regional membrane stability results, dynamic connection threshold, stability judgment difference, current unit length transmission speed, effective residence length, reflection state characterization value, flow state characterization value, retraction state characterization value, drying state characterization value, partition position, and real-time spreading front position are read. Based on the stability judgment difference and the comparison results of each state characterization value with the corresponding trigger reference interval, the deceleration trigger result, controlled desolvation trigger result, and membrane surface gentle leveling trigger result are generated respectively. When the deceleration trigger result corresponds to the stagnation area, the target deceleration range is calculated based on the stability judgment difference and the flow state characterization value. The unit length transmission speed is reduced in stages according to the target deceleration range. At the same time, the actual residence time is recalculated based on the reduced unit length transmission speed. The deceleration adjustment is stopped when the actual residence time reaches the preset delay requirement or the flow state characterization value enters the preset flow allowable range. When the controlled solvent removal trigger result corresponds to the stagnation area, the solvent removal intensity, solvent removal action length, and solvent removal action period are determined based on the drying state characterization value, effective residence length, and partition location. The controlled solvent removal operation is carried out along the transmission path of the stagnation area. The controlled solvent removal operation is stopped when the drying state characterization value enters the preset drying allowable range and the residual solvent removal degree reaches the preset removal requirement. When the membrane surface gentle leveling trigger result is obtained in the retention area, the leveling range, leveling intensity, and leveling sequence are determined based on the retraction state characterization value, reflection state characterization value, and partition location. For areas where local surface undulations exceed the preset leveling range or where edge retraction exceeds the preset retraction range, membrane surface gentle leveling is performed. The membrane surface gentle leveling operation stops when the retraction state characterization value enters the preset retraction allowable range and the membrane surface undulations corresponding to the reflection state characterization value enter the preset leveling allowable range. When two or more adjustment trigger results are simultaneously met in the same retention area, the combined adjustment is performed in the following order: first, deceleration adjustment; then, controlled solvent removal operation; and finally, membrane surface gentle leveling operation. After the adjustment is completed, the stagnant area is re-associated with the updated unit length transmission speed, updated actual residence time, updated area boundary, and the stopping results of each adjustment action. When the flow state characterization value, dry state characterization value, retraction state characterization value, and reflection state characterization value all fall within the corresponding allowable range, the stagnant area is determined as the area to be retested. When any state characterization value does not fall within the corresponding allowable range, the stagnant area is returned to the corresponding adjustment action to continue the in-situ adjustment process.

[0027] Preferably, in step S6, the partition position corresponding to the area to be retested, the adjusted area boundary, the updated unit length transmission speed, the updated actual dwell time, the previous in-situ adjustment processing result, and the current retesting round can be read first; online acquisition is re-executed for the area to be retested to obtain the membrane surface reflection state data, membrane surface flow trajectory data, membrane surface boundary state data, and membrane surface drying state data corresponding to the current retesting time, and the state data obtained at the current retesting time are compared with the state data corresponding to the previous acquisition time to obtain the surface reflection change, membrane surface flow change, edge retraction change, and drying uniformity change; Then, based on the above changes, the state value transformation is re-executed, and the weighted calculation is re-executed in combination with the updated unit length transmission speed and the updated actual dwell time to obtain the membrane stability result of the area to be retested; further, using the updated unit length transmission speed, the updated actual dwell time and the partition position corresponding to the area to be retested as input, the dynamic control threshold corresponding to the area to be retested is recalculated, and the re-obtained membrane stability result is compared with the recalculated dynamic control threshold. When the re-obtained membrane stability result is not lower than the recalculated dynamic control threshold, the corresponding release command for the area to be retested is output and the retesting cycle of the current area to be retested is terminated; when the re-obtained membrane stability result is lower than the recalculated dynamic control threshold, the retesting judgment difference corresponding to the area to be retested is calculated, and the non-compliant dominant state type is determined based on the retesting judgment difference and the reflection state characterization value, flow state characterization value, shrinkage state characterization value and dry state characterization value. When the current retesting cycle has not reached the preset cycle limit, the area to be retested is returned to the in-situ adjustment processing step corresponding to the non-compliant dominant state type to re-execute the adjustment, and the current retesting cycle is incremented and re-entered into the retesting process. When the current retesting cycle reaches the preset cycle limit and the re-obtained membrane stability result is still lower than the recalculated dynamic control threshold, the process of returning the area to be retested to the in-situ adjustment step is stopped, a cycle termination command is output, and the area to be retested is marked as the retesting termination area. Finally, the results of the areas to be retested that have output release command, returned to the in-situ adjustment step, or output cycle termination command are marked respectively, and the corresponding marked results are output for subsequent continuous processing, re-in-situ adjustment processing, or termination isolation processing.

[0028] Preferably, in step S7, the partition location, regional membrane stability result, dynamic takeover threshold, adjustment history information, retest result mark, and state difference information of adjacent regions corresponding to the region for which a release instruction has been issued can be read first to form a state reorganization input group; the stability difference value, boundary state difference value, and adjustment inheritance risk value between the region for which a release instruction has been issued and adjacent regions can be calculated based on the state reorganization input group; when at least one of the stability difference value, boundary state difference value, or adjustment inheritance risk value exceeds the corresponding preset reorganization threshold, the region is determined as the region to be reorganized; the region to be reorganized is subjected to state reorganization processing along the transmission direction according to the partition location. The state reorganization processing includes determining the membrane transition length based on the stability difference value, determining the boundary slow release range based on the boundary state difference value, and determining the surface homogenization intensity based on the adjustment inheritance risk value, so that the membrane state, boundary state, and surface state of the region to be reorganized along the transmission direction change from a local abrupt distribution to a continuous transition distribution, and the reorganized transition region is obtained; Then, the stability difference value and boundary state difference value between the reorganized transition region and its adjacent regions are re-collected, and the re-collected difference results are compared with the corresponding preset reorganization threshold. If the re-collected difference results do not exceed the corresponding preset reorganization threshold, the reorganized transition region is determined as a continuous input region. If the re-collected difference results still exceed the corresponding preset reorganization threshold, the state reorganization process continues until the continuous input condition is met. Finally, the continuously input area is continuously sent to the subsequent functional layer construction station or the subsequent perovskite layer shaping station according to the current continuous transmission direction, and then used as the area to be tested for the next round of online acquisition, state value conversion, weighted calculation, dynamic takeover threshold comparison, in-situ adjustment, retesting and release process, until the continuous construction of the perovskite layer and its upper functional layer is completed, and the perovskite-crystalline silicon tandem solar cell is obtained.

[0029] Furthermore, in order to mitigate the local mutation inheritance effect caused by the difference in prior regulation between the released area and the adjacent area, the state remodeling input group includes at least the regional-level membrane stability result difference ΔS, the boundary state difference value ΔE, and the regulation inheritance risk value R.

[0030] Wherein, ΔS is used to characterize the stability continuity between the current region and adjacent regions, ΔE is used to characterize the differences between the current region and adjacent regions in edge contour, edge retraction degree, or boundary flatness, and R is used to characterize the possibility that the previous adjustment action in the current region will have a inherited impact on subsequent continuous process sections. The adjustment inheritance risk value R can be obtained by weighting the previous adjustment action type, adjustment number, adjustment intensity, retest rounds, and state differences of adjacent regions.

[0031] When at least one of ΔS, ΔE, and R exceeds the corresponding preset reforming threshold, the region is identified as a region to be reformed. For the region to be reformed, the membrane transition length L1 is further determined based on ΔS, the boundary sustained-release range L2 is determined based on ΔE, and the surface homogenization intensity P is determined based on R.

[0032] Among them, the membrane transition length L1 is used to determine the length range of transition remodeling required along the transmission direction, the boundary mitigation range L2 is used to determine the width range of boundary mitigation treatment required on both sides of the partition boundary, and the surface homogenization intensity P is used to determine the execution intensity, number of executions, or duration of the remodeling action.

[0033] In one embodiment, the state remodeling process includes at least one of the following operations: performing a gradual transition process along the transport direction on the region to be remodeled to reduce the membrane stability gradient between the local region and the adjacent region; performing a boundary easing process on both sides of the boundary of the region to be remodeled to reduce the difference in local boundary contraction or membrane surface undulation; and performing a homogenization process on the surface of the region to be remodeled so that the surface state of the region changes from a local abrupt distribution to a continuous transition distribution.

[0034] The gradual transition treatment can be achieved by adjusting the local transport velocity gradient, local heat input gradient, local desolvation intensity gradient, or a combination thereof; the boundary mitigation treatment can be achieved by controlling the local evaporation rate, local flow inhibition intensity, local surface tension balance, or a combination thereof in the boundary adjacent region; the surface homogenization treatment can be achieved by mild leveling, micro-rebalancing, or local surface reconstruction. After reforming, ΔS and ΔE are detected again until both do not exceed the corresponding preset reforming threshold.

[0035] Beneficial effects Compared with existing technologies, the low-temperature solution continuous preparation method for perovskite-crystalline silicon tandem solar cells proposed in this invention has the following advantages: 1. This invention does not follow a fixed-rhythm mechanical continuous preparation process, but takes the actual state of the continuous wet film as the core basis. Through online acquisition, state value conversion, weight calculation and dynamic take-off threshold comparison, it realizes real-time determination of whether different zones have the conditions for continuation, thereby avoiding the premature transfer of unstable film layers to the next station.

[0036] 2. This invention enables differentiated evaluation of film stability results based on flow deviation, drying deviation, edge retraction deviation, and reflection anomaly deviation through a dominant deviation identification and weight adaptive allocation mechanism. Furthermore, it combines transport speed, effective residence length, spreading front position, and partition position to form a dynamic control threshold, thereby improving the accuracy and adaptability of state determination under continuous preparation conditions.

[0037] 3. This invention, through a zoned control mechanism of release, retention and delayed continuation, combined with speed reduction adjustment, controlled solvent removal treatment, membrane surface smoothing, retesting closed loop and state reorganization treatment, can effectively block the inheritance and amplification of local fluctuations in continuous preparation, and improve the continuity consistency of subsequent functional layer construction and subsequent shaping station.

[0038] 4. The present invention further sets up an abnormal working condition protection and self-recovery mechanism in the continuous preparation stage, which can identify, adjust and restore the re-offset state of the released area, the re-formed area or the finalized area in the subsequent work station, thereby forming a whole process control system covering the film formation control in the front stage and the final shaping protection in the back stage, which is conducive to improving the preparation stability, film consistency and final device performance of perovskite-crystalline silicon tandem solar cells. Attached Figure Description

[0039] Figure 1 This is a flowchart illustrating the overall steps of a low-temperature solution continuous preparation method for a perovskite-crystalline silicon tandem solar cell proposed in this invention. Detailed Implementation

[0040] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are all within the protection scope of the present invention.

[0041] Example 1 This embodiment provides a low-temperature solution continuous preparation method for perovskite-crystalline silicon tandem solar cells, which is applicable to the construction of perovskite functional layers on a continuous transport substrate. Its core lies in using the real-time state of the wet film as the criterion to achieve zonal control, dynamic takeover, in-situ adjustment, and closed-loop retesting, thereby ensuring the stability and consistency of the continuous preparation process.

[0042] Reference Figure 1 The specific implementation process is as follows: S1. Continuous coating, spreading front tracking and zoning coding establishment The substrate with the formed crystalline silicon bottom cell and its lower functional layer is placed on the transport mechanism and continuously moved at a preset transport speed in a set transport direction. The amount of precursor liquid supplied per unit time is calculated based on the target coating width and preset wet film thickness, and the liquid supply device is controlled to continuously output perovskite precursor liquid according to the supply amount, forming a continuous liquid phase deposition zone on the substrate surface.

[0043] The spreading unit applies a spreading effect along the transport direction to the liquid phase deposition zone, forming a continuous wet film layer, and the position where the front end reaches a continuous coverage state is determined as the spreading front. During the movement of the substrate, the spreading front is continuously collected and updated according to a preset time interval or displacement interval.

[0044] The time when the wet film first forms continuous coverage is taken as the starting formation time. Combined with the transmission speed and the update results of the spreading front, the transmission distance and effective dwell length at each location are calculated. The wet film is divided into multiple continuous partitions along the transmission direction. Based on the starting formation time, the starting boundary position, the real-time spreading front position and the effective dwell length, partition coding information is generated so that each partition has a unique identifier and corresponds to its formation history.

[0045] S2. State acquisition, change calculation and state value discretization Once the wet film enters the status acquisition area, each zone is identified according to its zone code, and its initial formation location information, current transmission speed, and effective dwell length are read as the acquisition reference.

[0046] Based on the transmission speed, the time interval or displacement interval between two adjacent acquisitions is set, and the membrane surface reflection state data, membrane surface flow trajectory data, membrane surface boundary state data, and membrane surface drying state data are acquired at the previous acquisition time and the current acquisition time, respectively.

[0047] Among them, membrane surface reflection state data can be obtained through line scan camera, area scan camera or reflected light intensity detection unit; membrane surface flow trajectory data can be obtained through feature texture tracking, marker point displacement detection or edge trajectory recognition; membrane surface boundary state data can be obtained through image edge extraction or contour recognition; and membrane surface drying state data can be obtained through infrared thermal response, grayscale distribution dispersion, scattering difference or local temperature field change.

[0048] The difference between the data before and after the time interval is calculated to obtain the changes in surface reflection, film flow, edge retraction, and drying uniformity. Each change is matched with a preset reference interval and uniformly converted into discrete state values. The stable or controlled interval is assigned the first state value, the transition interval is assigned the second state value, and the abnormal interval is assigned the third state value, thus forming a state value group for the corresponding partition.

[0049] S3. Dominant Deviation Identification, Stability Calculation, and Dynamic Threshold Generation Read the status value groups of each partition and combine them with transmission speed, effective dwell length, spreading front position and partition position for joint analysis to identify the dominant deviation type of the current partition.

[0050] In this embodiment, let the reflection state value be A1, the flow state value be A2, the retraction state value be A3, and the drying state value be A4; the corresponding reflection weights are B1, the flow weight is B2, the retraction weight is B3, and the drying weight is B4, where the sum of B1, B2, B3, and B4 is 1. The initial film stability value S0 can then be calculated as follows: S0 = A1 × B1 + A2 × B2 + A3 × B3 + A4 × B4.

[0051] In one embodiment, the first state value is 1.0, the second state value is 0.5, and the third state value is 0. When at least one of the flow state value, dry state value, retraction state value, and reflection state value corresponds to the second or third state value, the dominant deviation type is first identified by combining the effective residence length, the real-time spreading front position, and the partition position.

[0052] Specifically, when the flow state value corresponds to the second or third state value and the real-time spreading front position is within the front fluctuation range, it is determined that the flow deviation is dominant; when the dry state value corresponds to the second or third state value and the effective residence length is lower than the preset residence length, it is determined that the dryness deviation is dominant; when the retraction state value corresponds to the second or third state value and the partition is located within the preset boundary range on the edge side, it is determined that the retraction deviation is dominant; when the reflection state value corresponds to the second or third state value and the flow state value, retraction state value, and dry state value all correspond to the first state value, it is determined that the reflection deviation is dominant.

[0053] The reflection weight, flow weight, shrinkage weight, and drying weight are determined according to the dominant deviation type, and the sum of the weights is kept as a preset constant. Each state value is multiplied by its corresponding weight and then summed to obtain the initial film stability value.

[0054] The initial membrane stability value is further corrected by combining transmission speed, effective dwell length, real-time spreading front position, and partition position to obtain the regional membrane stability result. Let the speed correction term be C1, the dwell time correction term be C2, the front correction term be C3, and the position correction term be C4, then the regional membrane stability result S can be expressed as: S = S0 + C1 + C2 + C3 + C4.

[0055] Meanwhile, based on the preset basic takeover threshold T0, the dynamic takeover threshold T is obtained by linkage correction according to the transmission speed, effective dwell length, real-time deployment front position and partition position: T=T0+D1+D2+D3+D4.

[0056] Among them, D1 is the velocity threshold correction term, D2 is the dwell time threshold correction term, D3 is the leading edge position threshold correction term, and D4 is the zone position threshold correction term. This method ensures that both the regional membrane stability results and the dynamic overhaul threshold have clearly defined inputs, calculation processes, and outputs, improving the executability and repeatability of subsequent overhaul determinations.

[0057] S4. Partition determination, difference constraints and continuity control The regional membrane stability results are compared with the dynamic control threshold to calculate the stability judgment difference, and each zone is divided into qualified zones and unqualified zones accordingly.

[0058] For compliant zones that are arranged continuously and whose stability differences between adjacent zones are within a preset range, they are identified as connectable zones and a release command is output to allow them to enter the next work station. For non-compliant zones or zones located in the vicinity of the paving front, a stay command is output to keep them at the current work station. For zones that are between compliant and non-compliant zones and whose stability differences exceed the transition range, a delayed connection command is output to keep them in the waiting-to-connect state.

[0059] Various commands are output in association according to the partition location, forming the partition control result of continuous wet film.

[0060] S5. In-situ regulation of the stagnation area and multi-action coordinated control In-situ conditioning was performed on the stagnant area, and its stability judgment difference and state value group were read. The triggering conditions for deceleration, controlled desolvation treatment and membrane surface gentle leveling treatment were determined respectively.

[0061] When speed reduction regulation is triggered, the speed reduction magnitude is calculated based on the flow state value and stability difference, and the unit length transmission speed is reduced to increase the residence time. The speed reduction stops when the flow state enters the allowable range or reaches the preset delay condition. When controlled desolventizing is triggered, the desolventizing intensity and action time are determined based on the drying state value and effective residence length. The process stops when the solvent residue meets the requirements. When membrane surface gentle leveling is triggered, the leveling range and leveling intensity are determined based on the retraction and reflection state. The process stops when the membrane surface flatness meets the requirements.

[0062] When multiple adjustment conditions are met simultaneously in the same area, the process is carried out in the order of slowing down, desolvation, and leveling. The state parameters are updated after each adjustment step is completed until each state enters the allowable range, forming the area to be retested.

[0063] S6. Retesting Closed-Loop Control and Loop Termination Decision The status acquisition, change calculation and status value conversion of the area to be retested are performed again, and the membrane stability results and dynamic control threshold are recalculated in combination with the updated transmission speed and residence time.

[0064] When the stability result reaches the dynamic takeover threshold, a release command is output and the adjustment process ends; when the threshold is not reached, the corresponding adjustment step is returned to continue processing according to the dominant deviation type, and the number of retesting rounds is recorded.

[0065] When the number of retest rounds reaches the preset upper limit and still fails to meet the standard, a termination command is output and the area is marked as an abnormal region for subsequent isolation or removal processing, thus forming a complete closed-loop control.

[0066] S7. State Reconditioning and Continuous Process Integration Before a released area enters the next workstation, a status reorganization process is performed. The stability difference and boundary difference between the released area and the adjacent area are read, and the area is identified as a reorganization area when the difference exceeds a preset threshold.

[0067] In this embodiment, the state remodeling input group includes at least the regional-level membrane stability result difference ΔS, the boundary state difference value ΔE, and the adjustment inheritance risk value R.

[0068] Wherein, ΔS is used to characterize the stability continuity between the current region and adjacent regions, ΔE is used to characterize the differences between the current region and adjacent regions in edge contour, edge retraction degree, or boundary flatness, and R is used to characterize the possibility that the previous adjustment action in the current region will have a inherited impact on subsequent continuous process sections. The adjustment inheritance risk value R can be obtained by weighting the previous adjustment action type, adjustment number, adjustment intensity, retest rounds, and state differences of adjacent regions.

[0069] When at least one of ΔS, ΔE, and R exceeds the corresponding preset reforming threshold, the released region is identified as a region to be reformed. For the region to be reformed, the membrane transition length L1 is determined based on ΔS, the boundary sustained-release range L2 is determined based on ΔE, and the surface homogenization intensity P is determined based on R.

[0070] Among them, the membrane transition length L1 is used to determine the length range of transition remodeling required along the transmission direction; the boundary relief range L2 is used to determine the width range of boundary mitigation treatment required on both sides of the partition boundary; and the surface homogenization intensity P is used to determine the execution intensity, number of executions, or duration of the remodeling action.

[0071] In one embodiment, the state remodeling process includes at least one of the following operations: performing a gradual transition process along the transport direction on the region to be remodeled to reduce the membrane stability gradient between the local region and the adjacent region; performing a boundary easing process on both sides of the boundary of the region to be remodeled to reduce the difference in local boundary contraction or membrane surface undulation; and performing a homogenization process on the surface of the region to be remodeled so that the surface state of the region changes from a local abrupt distribution to a continuous transition distribution.

[0072] The gradual transition treatment can be achieved by adjusting the local transport speed gradient, the local heat input gradient, the local desolvation intensity gradient, or a combination thereof; the boundary easing treatment can be achieved by controlling the local evaporation rate, the local flow inhibition intensity, the local surface tension balance, or a combination thereof in the boundary adjacent region; and the surface homogenization treatment can be achieved by light leveling, micro-rebalancing, or local surface reconstruction.

[0073] After processing, ΔS and ΔE are checked again until the continuation conditions are met. Subsequently, the areas that meet the conditions are continuously sent to the subsequent functional layer construction station or perovskite layer shaping station, and the above steps are repeated until the continuous preparation of the perovskite layer and its upper functional layer is completed.

[0074] Through the above implementation methods, the continuous fabrication process is transformed from being driven by a fixed cycle to being dynamically controlled based on the actual state of the film layer, so that each zone can enter the next station only after reaching the conditions for continuity; at the same time, through in-situ adjustment, retesting closed loop and state reshaping mechanisms, the transmission and amplification of local fluctuations in continuous fabrication are effectively blocked, thereby significantly improving the film layer consistency and device stability.

[0075] Example 2 Based on the continuous preparation process of Example 1, this embodiment limits key parameters such as transmission speed, liquid supply volume, partition scale, state determination interval, weight allocation, and adjustment trigger threshold to ensure the repeatability and controllability of each step in actual production.

[0076] I. Continuous Coating and Zoning Scale Parameters In step S1, the transmission speed is preferably 0.1 m / min to 2.0 m / min, more preferably 0.3 m / min to 1.2 m / min; the preset wet film thickness is preferably 200 nm to 1500 nm, and the corresponding precursor liquid supply per unit time is determined according to the following relationship: the supply amount changes positively with the transmission speed and is proportionally matched with the target wet film thickness.

[0077] The preferred update cycle for the spreading front is 0.05s to 0.5s, or the corresponding displacement increment is 0.5mm to 5mm; the preferred partition length is 2mm to 20mm, so that the effective dwell time of each partition at the current transmission speed is 0.5s to 10s.

[0078] The partition coding information includes at least the initial formation time, the initial boundary position, and the current spreading front position, and allows the addition of the effective dwell length as a dynamically updated field.

[0079] II. Status Acquisition and Change Calculation Parameters In step S2, the time interval between two adjacent acquisitions is preferably 0.05s to 0.3s, or the displacement interval is 0.5mm to 3mm; the change in surface reflection is calculated by the difference in reflection intensity between the two acquisitions, the change in film flow is calculated by the displacement of the marker point or the change in texture, the change in edge retraction is calculated by the change in boundary position, and the change in drying uniformity is calculated by the difference in local grayscale or temperature distribution.

[0080] The reference intervals for each change are divided as follows: when the change is less than the first threshold, it is determined to be a stable interval; when the change is between the first threshold and the second threshold, it is determined to be a transition interval; when the change is greater than the second threshold, it is determined to be an abnormal interval.

[0081] The first threshold is preferably 0.5 to 1.2 times the historical average of the change, and the second threshold is preferably 1.5 to 3 times the historical average of the change.

[0082] III. State value assignment and stability calculation parameters During the state value transition process, the first state value is preferably set to 1.0, the second state value is preferably set to 0.5, and the third state value is preferably set to 0.

[0083] In step S3, the initial ranges of the four weights are as follows: reflection weight 0.1 to 0.4, flow weight 0.2 to 0.5, shrinkage weight 0.1 to 0.4, and drying weight 0.2 to 0.5, and the sum of the four is constant at 1.

[0084] When flow deviation is identified as dominant, the flow weight is increased to the range of 0.4–0.6; when drying deviation is identified as dominant, the drying weight is increased to the range of 0.4–0.6; when shrinkage deviation is identified as dominant, the shrinkage weight is increased to the range of 0.3–0.5; when reflection deviation is identified as dominant, the reflection weight is increased to the range of 0.3–0.5, while the remaining weights are proportionally compressed to satisfy the conservation of total weight.

[0085] The regional membrane stability result ranges from 0 to 1, and its calculation result is used for subsequent pipe fitting determination.

[0086] IV. Dynamic Takeover Threshold Range and Linkage Rules The basic takeover threshold is preferably 0.6 to 0.85. Based on this, a linkage correction is made according to the transmission speed and the effective dwell length: when the transmission speed increases or the effective dwell length decreases, the dynamic takeover threshold increases by 0.05 to 0.2; when the transmission speed decreases or the effective dwell length increases, the dynamic takeover threshold decreases by 0.05 to 0.2.

[0087] For zones near the paving front, an additional position correction term is applied, which increases the dynamic takeover threshold by an additional 0.02 to 0.1.

[0088] For partitions located in high-risk edge areas, an edge location correction term can be added to further increase the dynamic takeover threshold, thereby enhancing the sensitivity to identify edge retraction-type deviations.

[0089] V. Partition Determination and Difference Constraint Parameters In step S4, the stability determination difference is preferably the membrane stability result minus the dynamic pipe threshold, and its determination range is as follows: when the difference is greater than or equal to 0, it is determined to be a qualified zone; when the difference is less than 0, it is determined to be a non-qualified zone.

[0090] The allowable range for the stability difference between adjacent partitions is preferably 0.05 to 0.2; if it exceeds this range, delayed continuation or retention processing will be triggered.

[0091] VI. In-situ Adjustment Triggering and Execution Parameters In step S5, the triggering conditions for the three types of adjustment actions are as follows: when the flow state value is the third state value or the stability judgment difference is less than -0.1, a speed reduction adjustment is triggered, and the speed reduction range is preferably 10% to 50% of the current speed; when the drying state value is the third state value, a controlled desolventizing treatment is triggered, and the desolventizing time is preferably 0.5s to 5s; when the retraction or reflection state value is the third state value, a membrane surface gentle leveling treatment is triggered, and the leveling range preferably covers 50% to 100% of the length of the corresponding partition.

[0092] The preferred execution order for the three types of adjustment actions is deceleration, solvent removal, and leveling, with the state value being re-detected after each action.

[0093] VII. Retesting Cycle and Termination Rules In step S6, the upper limit of the number of retesting rounds is preferably 2 to 5 times; when the result of any retesting round meets the stability judgment condition, the test is immediately released.

[0094] When the number of retest rounds reaches the upper limit and the target is still not met, the partition is marked as an abnormal area and a termination command is output.

[0095] 8. State Renormalization Parameters In step S7, the stability difference threshold is preferably 0.05 to 0.15, and the boundary difference threshold is preferably 0.05 to 0.2; when any difference exceeds the corresponding threshold, state reorganization is triggered.

[0096] The membrane transition length is preferably 1 to 3 times the partition length, and the boundary sustained-release range is preferably 10% to 50% of the partition width; the difference is detected again after re-regulation until it is below the threshold.

[0097] The risk value of the adjustment inheritance can be classified according to the combination of the previous adjustment action type, adjustment number, adjustment intensity and retest rounds, and used as one of the bases for determining the surface homogenization intensity.

[0098] By limiting the parameter ranges mentioned above, each step has clear operational boundaries and adjustment space. Stable operation can be achieved through parameter selection under different equipment capabilities and material systems. At the same time, process drift caused by parameter uncertainty is avoided, thereby further improving the controllability and consistency of the continuous preparation process.

[0099] Example 3 Based on Examples 1 and 2, this embodiment further refines the key control parameters in the continuous preparation process into three-level gradient ranges, including preferred range, more preferred range, and most preferred range, in order to improve process repeatability and disclosure sufficiency.

[0100] I. Transmission Speed ​​and Partition Scale Three-Level Gradient Transmission speed Preferred speed range: 0.1 m / min to 2.0 m / min; A more preferred range is 0.3 m / min to 1.2 m / min; Optimal speed range: 0.5 m / min to 0.9 m / min; Within the optimal range, the film layer exhibits the best spreading stability and continuity, making it suitable for high-consistency preparation scenarios.

[0101] wet film thickness Preferred range: 200nm~1500nm; A more preferred range: 400nm~1000nm; Optimal selection range: 600nm~850nm; This range corresponds to the balance window between perovskite nucleation and grain growth.

[0102] Partition length Preferred range: 2mm~20mm; A more preferred range is 5mm to 15mm; Optimal range: 6mm~10mm; Within the optimal range, each partition has a more stable state evolution time window.

[0103] II. Three-level gradient for state acquisition and change determination Sampling time interval Preferred range: 0.05s~0.3s; A more preferred range is 0.08s to 0.2s; Optimal selection range: 0.1s~0.15s.

[0104] Sampling displacement interval Preferred range: 0.5mm~3mm; A more preferred range: 0.8mm to 2mm; Optimal range: 1mm~1.5mm.

[0105] Change threshold system First threshold Preferred value: 0.5 to 1.2 times the historical average; More preferably: 0.7 to 1.0 times; Optimal selection: 0.8 to 0.95 times.

[0106] Second threshold Preferred: 1.5 to 3 times the historical average; More preferably: 1.8 to 2.5 times; Optimal choice: 2.0 to 2.2 times.

[0107] III. Calculation of State Values ​​and Stability using the Third-Order Gradient State value mapping First state value: 1.0; Second state value: 0.5; Third state value: 0.

[0108] Weighting system Preferred range Reflection weight: 0.1–0.4; Flow weight: 0.2–0.5; Retraction weight: 0.1~0.4; Drying weight: 0.2 to 0.5.

[0109] More preferred range Reflection weight: 0.15~0.35; Flow weight: 0.25~0.45; Retraction weight: 0.15~0.35; Drying weight: 0.25~0.45.

[0110] Optimal range Reflection weight: 0.2–0.3; Flow weight: 0.3–0.4; Retraction weight: 0.2~0.3; Drying weight: 0.3 to 0.4.

[0111] In the optimal state, the weight distribution is more balanced, which helps to avoid misjudgment caused by a single factor.

[0112] IV. Three-level gradient system for dynamic takeover threshold Basic takeover threshold Preferred range: 0.6–0.85; A more preferred range is 0.65 to 0.8; Optimal range: 0.7 to 0.78.

[0113] Speed / Dwell Time Linkage Correction Range Preferred value: ±0.05~0.2; More preferably: ±0.08~0.15; Optimal selection: ±0.1~0.12.

[0114] Additional corrections to the leading edge position Preferred concentration: 0.02–0.1; More preferably: 0.03–0.08; Optimal value: 0.04~0.06.

[0115] Edge position additional correction Preferred concentration: 0.01–0.08; More preferably: 0.02–0.06; Optimal value: 0.03~0.05.

[0116] V. Three-level gradient for partition determination and tolerance system Stability Judgment Difference Tolerance Preferred: 0 or greater than or equal to 0 is considered acceptable; More preferably: a value greater than or equal to 0.02 is considered acceptable; Optimal selection: greater than or equal to 0.05 is considered acceptable.

[0117] Tolerance range of differences between adjacent partitions Preferred concentration: 0.05–0.2; More preferably: 0.08–0.15; Optimal selection: 0.1~0.12.

[0118] VI. In-situ Adjustment of Parameters in Three-Level Gradients speed reduction adjustment range Preferred: 10%–50%; More preferred: 15%–35%; Optimal selection: 20%–30%.

[0119] Solvent removal processing time Preferred time: 0.5s to 5s; More preferably: 1s to 3s; Optimal selection: 1.2s~2.5s.

[0120] Leveling range Preferred: 50%–100% partition length; More preferred: 60%–90%; Optimal selection: 70%–85%.

[0121] VII. Retesting and Termination Rules: Three-Level Gradient Optimal number of retests: 2-5; More preferably: 2 to 4 times; Optimal selection: 2-3 times.

[0122] 8. State Resetting Three-Level Gradient Difference trigger threshold Preferred concentration: 0.05–0.2; More preferably: 0.06–0.15; Optimal value: 0.08~0.12.

[0123] Transition length Preferred length: 1 to 3 times the partition length; More preferably: 1.2 to 2.5 times; Optimal choice: 1.5 to 2 times.

[0124] Sustained-release range Preferred: 10%–50%; More preferred: 15%–40%; Optimal selection: 20%–30%.

[0125] Surface homogenization intensity Preferred strength: Gradual progression from low to high strength; Better: Adjust the inheritance risk value in three progressive levels; Optimal choice: Start with low to medium intensity and gradually increase as needed.

[0126] Through the above three-level gradient parameter system, this invention not only provides a wide range of feasible process windows, but also further clarifies the optimization path under different stability requirements, different equipment capabilities and different material systems, enabling those skilled in the art to select implementation schemes based on clear parameter levels, thereby achieving controllable scale-up and stable replication of continuous preparation processes.

[0127] Example 4: Protection and Self-Recovery Mechanism for Abnormal Operating Conditions in the Post-Continuous Preparation Stage It should be noted that this embodiment is not an independent operating scheme separate from Embodiments 1 to 3, but rather serves as an extended protection mechanism for the continuous fabrication closed-loop control process in the subsequent functional layer construction, subsequent perovskite layer shaping, and post-shaping transition transport stages. Embodiments 1 to 3 primarily address the stability control issues of continuous wet films during the initial formation, splicing, adjustment, retesting, and state reorganization processes. This embodiment further provides anomaly identification, protection control, and recovery methods for regions that have completed the initial release or reorganization but may still deviate from the stable state due to environmental disturbances and internal hysteresis responses in the later stages. Therefore, this embodiment, together with Embodiments 1 to 3, constitutes a continuous fabrication process control system from initial wet film formation to subsequent shaping and protection.

[0128] Based on Examples 1 to 3, this embodiment further proposes an abnormal operating condition protection and self-recovery mechanism applicable to the later stage of continuous fabrication and the transition stage after shaping of perovskite-crystalline silicon tandem solar cells. This mechanism aims to solve the problem that the film layer region that has completed the connection process or entered the subsequent shaping stage during continuous fabrication may experience performance deviation, structural loosening, or interface instability due to damp heat disturbance, local photothermal fluctuation, interface charge imbalance, or enhanced ion migration.

[0129] During continuous fabrication, although some regions may have reached the conditions for continued processing at the previous stage, they may still be affected by environmental fluctuations, local energy input changes, and internal hysteresis responses after entering the subsequent functional layer construction stage, the subsequent perovskite layer shaping stage, or the online transition transport stage after shaping. This can cause a shift in the previously established stable state. If such shifts are not identified and corrected in time, they may be inherited and amplified through subsequent continuous transport and interlayer coupling processes, thereby affecting the overall consistency and final performance of the tandem solar cell.

[0130] Therefore, the abnormal working condition protection and self-recovery mechanism in this embodiment is preferably arranged after the subsequent functional layer construction station, in the subsequent perovskite layer shaping station, or in the online detection transition station after shaping is completed. It is used to re-monitor, determine abnormalities, and recover the released area, the reshaped area, or the shaped area, as a supplementary control mechanism in the later stage of the continuous preparation closed-loop process described in Embodiments 1 to 3.

[0131] S41 rear section multi-source status monitoring Multi-source state monitoring is conducted on the target areas that have entered the subsequent functional layer construction station, the subsequent perovskite layer shaping station, or the online transition station after shaping. The monitored parameters include film surface state parameters, local temperature parameters, local illumination parameters, interface electrical response parameters, and structural stability characterization parameters.

[0132] In one embodiment, the interface electrical response parameters may include at least one of open-circuit voltage Voc, short-circuit current Jsc, and fill factor FF, and the structural stability characterization parameters may include at least one of ion migration characteristic parameters, local defect evolution parameters, or interface charge distribution characteristic parameters.

[0133] S42 Abnormal Operating Condition Identification and Classification Based on the parameters obtained from the subsequent monitoring, the target area is determined to be in a first-level slight fluctuation state, a second-level performance deviation state, or a third-level structural instability warning state.

[0134] The threshold range used for determination is preferably set in association with the parameter range system in Embodiments 2 and 3, and is graded and corrected according to the current workstation type of the target area, the history of previous adjustments, and the degree of completion of the finalization.

[0135] S43 rear adaptive control response When the target area is determined to be in a Level 1 slight fluctuation state, a mild compensation adjustment is performed on it; when the target area is determined to be in a Level 2 performance deviation state, an enhanced post-stage correction process is performed on it; when the target area is determined to be in a Level 3 structural instability warning state, a process of restricting continued connection, isolating transport, or strengthening recovery is performed on it.

[0136] The control response may include at least one of local temperature rebalancing, interface energy level compensation regulation, ion migration suppression regulation, surface stress mitigation regulation, and light absorption state rebalancing regulation, in order to reduce the degree of damage to the prepared film state caused by subsequent anomalies.

[0137] S44 Structural Self-Healing Process After the abnormal operating conditions are suppressed, a self-recovery process is performed on the target region, including at least one of defect state passivation reconstruction, local lattice stress release, interface charge redistribution, surface structure rehomogenization, and carrier recombination path optimization, so that the target region gradually recovers from the abnormal offset state to a stable state that can continue to maintain subsequent shaping or enter the final output stage.

[0138] S45 Recovery Effect Assessment and Rear-End Lockdown The status monitoring is re-executed for the target area that has completed the self-recovery process, and the recovered key parameters are compared with the preset stable range of the corresponding downstream station. When the recovered key parameters meet the requirements of the corresponding stable range, the target area is identified as the recovery completed area and locked back to a stable output state. When the recovered key parameters still do not meet the requirements of the corresponding stable range, the target area is returned to the abnormal working condition identification step to re-execute the graded judgment and recovery adjustment, or the downstream termination isolation command is output.

[0139] This embodiment enables the regions where the initial control and state reorganization have been completed to remain under control during the subsequent functional layer construction, finalization, and online transport after finalization. This further reduces the risk of re-offset caused by subsequent disturbances and improves the stability and reliability of the entire continuous fabrication process of perovskite-crystalline silicon tandem solar cells.

[0140] The above are merely preferred embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A method for continuous low-temperature solution preparation of perovskite-crystalline silicon tandem solar cells, characterized in that, Includes the following steps: S1. The substrate with the formed crystalline silicon bottom cell and its lower functional layer is continuously fed into the low temperature solution coating station at a preset transmission speed. The perovskite precursor liquid is continuously supplied to the substrate surface, and the perovskite precursor liquid is controlled to spread along the transmission direction on the substrate surface to form a continuous wet film layer. At the same time, the current transmission speed, the effective dwell length of the corresponding station and the initial formation position of the corresponding wet film layer are recorded. S2. When the wet film layer leaves the coating station and enters the state acquisition area, the wet film layer is acquired online to obtain the surface reflection change, film flow change, edge retraction change and drying uniformity change at the corresponding detection position. The surface reflection change, film flow change, edge retraction change and drying uniformity change are converted into state characterization values ​​that reflect the degree of wet film layer shaping. S3. The state characterization values ​​of each detection position are weighted and calculated to obtain the membrane stability result of the corresponding detection position. Among them, the state characterization values ​​with high membrane disturbance sensitivity are given higher weights, and the state characterization values ​​with low membrane disturbance sensitivity are given lower weights. The dynamic pipe connection threshold of the corresponding detection position is calculated based on the recorded current transmission speed and the effective dwell length of the corresponding station. S4. Compare the membrane stability result with the dynamic control threshold. If the membrane stability result is not lower than the dynamic control threshold, determine that the wet membrane at the corresponding detection position has reached the state of continuous processing and output a release command to allow the corresponding area to enter the next station. If the membrane stability result is lower than the dynamic control threshold, determine that the wet membrane at the corresponding detection position is in an unstable state and output a retention command to prevent the corresponding area from directly entering the next station. S5. Perform in-situ adjustment processing on the unstable region of the output retention command. The in-situ adjustment processing includes reducing the transmission speed per unit length of the unstable region to increase the actual residence time, and implementing controlled solvent removal operation and membrane surface gentle leveling operation on the unstable region to reduce solvent residue, suppress intra-membrane flow and reduce local surface undulations, so as to obtain the adjusted region to be retested. S6. For the area to be retested, online data acquisition, state characterization value conversion, weighted calculation, and dynamic control threshold comparison are performed again. When the obtained membrane stability result is not lower than the recalculated dynamic control threshold, a release command is output to allow the area to be retested to enter the next station. When the obtained membrane stability result is still lower than the recalculated dynamic control threshold, in-situ adjustment processing is continued until the area to be retested reaches a state that can be processed. S7. Before the region that has been issued a release command enters the next station, a state reshaping process is performed. The state reshaping process is used to reduce the inherited impact of previous local fluctuations on subsequent continuous preparation sections. The region after state reshaping is continuously sent to the subsequent functional layer construction station or the subsequent perovskite layer shaping station. The above detection, calculation, comparison, adjustment, retesting and release process is repeated until the continuous construction of the perovskite layer and its upper functional layer is completed, and a perovskite crystalline silicon tandem solar cell is obtained.

2. A method for continuous low-temperature solution preparation of a perovskite-crystalline silicon tandem solar cell according to claim 1, characterized in that, The substrate with the formed crystalline silicon bottom cell and its lower functional layer is continuously fed into the low-temperature solution coating station at a preset transport speed. Perovskite precursor solution is continuously supplied to the substrate surface, and the perovskite precursor solution is controlled to spread along the transport direction on the substrate surface to form a continuous wet film layer. At the same time, the current transport speed, the effective residence length of the corresponding station, and the initial formation position of the corresponding wet film layer are recorded. The process includes the following steps: S11. Input the substrate with the formed crystalline silicon bottom cell and its lower functional layer into the transmission mechanism, drive the substrate to move continuously according to the set transmission direction and preset transmission speed, and read the target coating width and preset wet film thickness to obtain the continuously running substrate and target film formation parameters that enter the low temperature solution coating station. S12. Calculate the amount of precursor liquid supplied per unit time based on the preset transmission speed, target coating width and preset wet film thickness, and continuously output perovskite precursor liquid to the coating surface of the continuously running substrate according to the amount of precursor liquid supplied per unit time, to obtain a continuous liquid phase deposition zone. S13. Apply a spreading action along the set transport direction to the continuous liquid phase deposition zone to form a continuous wet film layer on the surface to be coated, and determine the position where the front end of the continuous wet film layer reaches a continuous coverage state as the current spreading front, and obtain the initial spreading boundary and the initial spreading front. S14. During the continuous movement of the continuously operating substrate, the current spreading front is repeatedly collected according to the preset update cycle or preset displacement increment, and the front position obtained in this collection is compared with the front position obtained in the previous collection. When the front position obtained in this collection continues to move forward along the set transmission direction, the boundary after the forward movement is updated as the new current spreading front. When the front position obtained in this collection does not meet the continuous coverage requirement, the front position obtained in the previous collection is kept as the current spreading front, so as to obtain the real-time spreading front update result of the continuous wet film layer. S15. Taking the moment when the initial spreading boundary is first formed as the moment when the wet film is first formed, and combining the preset transmission speed and the real-time spreading front update results, calculate the transmission distance of the continuous wet film layer from the initial spreading boundary to each corresponding area, and calculate the effective dwell length of each corresponding area in the low temperature solution coating station based on the transmission distance and the length of the low temperature solution coating station. S16. Divide the continuous wet film layer into multiple continuous partitions according to the set transmission direction, and generate corresponding partition coding information based on the wet film initial formation time, initial spreading boundary position, real-time spreading front position and effective dwell length of each continuous partition, so that each continuous partition has a unique region identifier that corresponds one-to-one with its initial formation position, and obtain the initial formation position information for subsequent regional-level film layer stability result calculation and dynamic pipe connection threshold calculation.

3. A method for continuous low-temperature solution preparation of a perovskite-crystalline silicon tandem solar cell according to claim 1, characterized in that, When the wet film layer leaves the coating station and enters the state acquisition area, online data is collected to obtain the changes in surface reflection, film flow, edge retraction, and drying uniformity at the corresponding detection locations. These changes are then converted into state characterization values ​​reflecting the degree of wet film layer stabilization. The process includes the following steps: S21. Divide the continuous wet film layer that leaves the coating station and enters the status acquisition area into multiple continuous detection zones according to the set transmission direction, and read the initial formation position information, current transmission speed and effective dwell length corresponding to each continuous detection zone to obtain the acquisition reference information. S22. Set the acquisition interval between two adjacent online acquisitions according to the current transmission speed. When the current transmission speed is within the preset speed range, repeat acquisition is performed using the preset time interval. When the current transmission speed exceeds the preset speed range, the preset time interval is converted into the corresponding displacement interval and repeat acquisition is performed according to the displacement interval, thereby determining the previous acquisition time and the current acquisition time corresponding to each continuous detection zone. S23. For each continuous detection zone, acquire membrane surface reflection state data, membrane surface flow trajectory data, membrane surface boundary state data, and membrane surface drying state data at the previous acquisition time and the current acquisition time, respectively. Subtract the membrane surface reflection state data at the current acquisition time from the membrane surface reflection state data at the previous acquisition time to obtain the surface reflection change. Subtract the membrane surface flow trajectory offset at the current acquisition time from the membrane surface flow trajectory offset at the previous acquisition time to obtain the membrane surface flow change. Subtract the membrane boundary contraction distance at the current acquisition time from the membrane boundary contraction distance at the previous acquisition time to obtain the edge contraction change. Subtract the local drying state dispersion of each acquisition point at the current acquisition time from the local drying state dispersion of each acquisition point at the previous acquisition time to obtain the drying uniformity change. S24. Match the changes in surface reflection, film flow, edge retraction and drying uniformity corresponding to each continuous detection zone with the corresponding preset reference intervals. Assign a first state value when it falls into the corresponding stable or controlled interval, assign a second state value when it falls into the corresponding transition interval, and assign a third state value when it falls into the corresponding abnormal interval. S25. Perform partitioned correlation output on the reflection state value, flow state value, retraction state value and drying state value corresponding to each continuous detection zone, so that each continuous detection zone forms a state value group corresponding to its initial formation position information, which is used for subsequent calculation of regional film stability results.

4. A method for continuous low-temperature solution preparation of a perovskite-crystalline silicon tandem solar cell according to claim 1, characterized in that, The state characterization values ​​at each detection location are weighted and calculated to obtain the membrane stability result at the corresponding detection location. The dynamic nozzle threshold at the corresponding detection location is then calculated based on the recorded current transmission speed and the effective dwell length at the corresponding station. This process includes the following steps: S31. Read the reflection state value, flow state value, retraction state value and drying state value corresponding to each continuous detection zone, as well as the current transmission speed, effective dwell length, real-time spreading front position and zone position of the corresponding continuous detection zone. S32. Determine the current dominant deviation type based on the state value, effective residence length, real-time spreading front position, and partition position corresponding to each continuous detection partition. Specifically, when the flow state value is the second or third flow state value and the real-time spreading front position is within the front fluctuation range, it is determined to be flow deviation dominant; when the dry state value is the second or third dry state value and the effective residence length is lower than the preset residence length, it is determined to be dry deviation dominant; when the retraction state value is the second or third retraction state value and the partition position is close to the wet film layer boundary area, it is determined to be retraction deviation dominant; when the reflection state value is the second or third reflection state value and the flow state value, retraction state value, and dry state value are all the first state value, it is determined to be reflection deviation dominant. S33. Determine the reflection weight, flow weight, shrinkage weight and drying weight corresponding to each continuous detection zone according to the current dominant deviation type, and keep the sum of the reflection weight, flow weight, shrinkage weight and drying weight at the preset total weight value. S34. For each continuous detection zone, multiply the reflection state value by the reflection weight to obtain the reflection weighted value, multiply the flow state value by the flow weight to obtain the flow weighted value, multiply the retraction state value by the retraction weight to obtain the retraction weighted value, and multiply the drying state value by the drying weight to obtain the drying weighted value. Then, accumulate the reflection weighted value, flow weighted value, retraction weighted value, and drying weighted value, and calculate the ratio with the preset total weight value to obtain the initial film stability value. S35. Based on the current transmission speed, effective dwell length, real-time spreading front position and partition position corresponding to each continuous detection partition, the initial membrane stability value is jointly corrected to obtain the regional membrane stability result. Then, based on the preset basic access threshold, speed correction, dwell correction and position correction are performed in combination with the current transmission speed, effective dwell length, real-time spreading front position and partition position to obtain the dynamic access threshold corresponding to each continuous detection partition.

5. A method for continuous low-temperature solution preparation of a perovskite-crystalline silicon tandem solar cell according to claim 4, characterized in that, The specific determination of reflection weight, flow weight, shrinkage weight, and drying weight includes the following steps: S36. Compare the changes in surface reflection, film flow, edge retraction, and drying uniformity corresponding to each continuous detection zone with the corresponding preset sensitive reference intervals, and determine the reflection sensitivity level, flow sensitivity level, retraction sensitivity level, and drying sensitivity level respectively. Each sensitivity level includes a first sensitivity level, a second sensitivity level, and a third sensitivity level. S37. Determine the initial weights of reflection, flow, shrinkage and drying according to the reflection sensitivity level, flow sensitivity level, shrinkage sensitivity level and drying sensitivity level corresponding to each continuous detection zone. Among them, the state characterization value corresponding to the higher sensitivity level is given a larger initial weight and the state characterization value corresponding to the lower sensitivity level is given a smaller initial weight. S38. Jointly verify the initial flow weight with the real-time spreading front position corresponding to the continuous detection zone, jointly verify the initial drying weight with the effective residence length corresponding to the continuous detection zone, jointly verify the initial retraction weight with the zone position corresponding to the continuous detection zone, and jointly verify the initial reflection weight with the flow sensitivity level, retraction sensitivity level and drying sensitivity level to obtain the reflection correction weight, flow correction weight, retraction correction weight and drying correction weight. S39. Perform total weight constraint correction on the reflection correction weight, flow correction weight, shrinkage correction weight and drying correction weight. When the sum of the four correction weights is higher than the preset total weight value, compress each correction weight proportionally. When the sum of the four correction weights is lower than the preset total weight value, compensate each correction weight proportionally. Obtain the final reflection weight, final flow weight, final shrinkage weight and final drying weight that meet the total weight conservation condition, and feed them back to calculate the regional-level film stability results for the corresponding continuous detection zone.

6. A method for continuous low-temperature solution preparation of a perovskite-crystalline silicon tandem solar cell according to claim 1, characterized in that, The membrane stability result is compared with the dynamic nozzle threshold. If the membrane stability result is not lower than the dynamic nozzle threshold, the wet membrane at the corresponding detection position is determined to be in a state where it can be processed continuously, and a release command is output to allow the corresponding area to enter the next station. If the membrane stability result is lower than the dynamic nozzle threshold, the wet membrane at the corresponding detection position is determined to be in an unstable state, and a retention command is output to prevent the corresponding area from directly entering the next station. The process includes the following steps: S41. Read the regional-level membrane stability results, dynamic control threshold, partition position, real-time spreading front position, and comparison status of adjacent continuous detection partitions corresponding to each continuous detection partition. S42. For each continuous detection zone, calculate the difference between the regional membrane stability result and the dynamic pipe connection threshold to obtain the stability judgment difference. When the stability judgment difference is greater than or equal to zero, the corresponding continuous detection zone is determined as a qualified zone. When the stability judgment difference is less than zero, the corresponding continuous detection zone is determined as a non-qualified zone. S43. Perform continuity verification on regions that are in a continuous arrangement and whose adjacent continuous detection zones are all qualified zones. When the difference in the regional membrane stability results between adjacent continuous detection zones does not exceed the preset difference range, the region is determined as a region that can be directly connected, and a release instruction is generated to allow the corresponding region to continuously enter the next station at the current transmission speed. S44. Perform a retention judgment on the area determined to be a non-compliant zone. When the difference between the regional membrane stability result of the non-compliant zone and its adjacent compliant zone exceeds the preset difference range, or when the non-compliant zone is located in the adjacent area of ​​the real-time spreading front, a retention instruction is generated and the non-compliant zone is marked as an area to be adjusted. S45. Perform a transition judgment on the critical partition located between the directly connectable area and the area to be adjusted. When the regional-level membrane stability result of the critical partition is not lower than the dynamic takeover threshold but the stability difference between it and the area to be adjusted exceeds the preset transition range, temporarily suspend the generation of the release command and output the delayed takeover command to keep the critical partition in the current station waiting-to-takeover state. S46. The release command, detention command and delayed continuation command are associated and output according to the partition position corresponding to the continuous detection partition to form the partition release result of the current continuous wet film layer.

7. A method for continuous low-temperature solution preparation of a perovskite-crystalline silicon tandem solar cell according to claim 6, characterized in that, The execution of release orders, detention orders, and delayed follow-up orders, as well as the triggering and execution of adjustments after the detention area enters the in-situ adjustment process, includes the following steps: S51. Read the release command, delay command or postponement command corresponding to each continuous detection partition, and read the partition position, current transmission speed and command status of adjacent continuous detection partitions corresponding to each continuous detection partition. S52. For continuous detection partitions corresponding to release commands, merge adjacent and continuously outputting release commands into a release area according to the partition position, and control the release area to continuously enter the next station while maintaining the current transmission speed; for continuous detection partitions corresponding to delay commands, control the corresponding area to remain within the current station and stop entering the next station, lock the current position and the current partition boundary, and mark it as a delay area and output it to the original position adjustment process; for continuous detection partitions corresponding to delayed continuation commands, control the corresponding area to remain in the current station waiting state and not directly enter the next station. S53. Read the regional-level membrane stability results, dynamic connection threshold, stability judgment difference, current unit length transmission speed, effective residence length, reflection state characterization value, flow state characterization value, retraction state characterization value, drying state characterization value, partition position and real-time spreading front position corresponding to each retention area, and generate the deceleration trigger result, controlled desolvation trigger result and membrane surface gentle leveling trigger result respectively based on the stability judgment difference and the comparison results of each state characterization value with the corresponding trigger reference interval; S54. When the deceleration trigger result corresponds to the stagnation zone, calculate the target deceleration range based on the stability judgment difference and the flow state characterization value, and reduce the unit length transmission speed of the stagnation zone in stages according to the target deceleration range. At the same time, recalculate the actual residence time based on the reduced unit length transmission speed. Stop the deceleration adjustment when the actual residence time reaches the preset delay requirement or the flow state characterization value enters the preset flow allowable range. When the controlled desolventizing trigger result corresponds to the stagnation zone, determine the desolventizing intensity, desolventizing action length, and desolventizing action period based on the drying state characterization value, effective residence length, and partition location, and implement it along the transmission path of the stagnation zone. The controlled solvent removal operation is stopped when the dry state characterization value enters the preset dry allowable range and the residual solvent removal degree reaches the preset removal requirement; when the membrane surface gentle leveling trigger result is corresponding to the retention area, the leveling action range, leveling action intensity and leveling action sequence are determined according to the shrinkage state characterization value, reflection state characterization value and partition position, and the membrane surface gentle leveling operation is implemented for areas where the local surface undulations exceed the preset leveling range or the edge shrinkage exceeds the preset shrinkage range. The membrane surface gentle leveling operation is stopped when the shrinkage state characterization value enters the preset shrinkage allowable range and the membrane surface undulations corresponding to the reflection state characterization value enter the preset leveling allowable range. S55. When two or more adjustment trigger results are met simultaneously in the same retention area, the combined adjustment is performed in the following order: first, the deceleration adjustment is performed; then, the controlled desolvation operation is performed; and finally, the membrane surface gentle leveling operation is performed. After the previous adjustment action is stopped, the corresponding state characterization value is reread. If the state characterization value corresponding to the next adjustment action has entered the corresponding allowable range, the next adjustment action is skipped. If the state characterization value corresponding to the next adjustment action has not entered the corresponding allowable range, the next adjustment action is performed. S56. After completing the deceleration adjustment, controlled desolvation operation, membrane surface gentle leveling operation, or combined adjustment, the stagnant area is re-associated with the updated unit length transmission speed, updated actual residence time, updated area boundary, and the stop results of each adjustment action. When the flow state characterization value, dry state characterization value, retraction state characterization value, and reflection state characterization value all fall within the corresponding allowable range, the stagnant area is identified as the area to be retested. When any state characterization value does not fall within the corresponding allowable range, the stagnant area is returned to the corresponding adjustment action to continue the in-situ adjustment process. The information of the released area, the stagnant area, the area to be continued, and the updated area execution boundary results are associated and output.

8. A method for continuous low-temperature solution preparation of a perovskite-crystalline silicon tandem solar cell according to claim 1, characterized in that, The process of re-performing online data acquisition, state representation value conversion, weighted calculation, and dynamic takeover threshold comparison for the area to be retested includes the following steps: S61. Read the partition location corresponding to the area to be retested, the adjusted area boundary, the updated unit length transmission speed, the updated actual dwell time, the previous in-situ adjustment processing result, and the current retest round. S62. Re-execute online data acquisition for the area to be retested, and obtain the membrane surface reflection state data, membrane surface flow trajectory data, membrane surface boundary state data, and membrane surface drying state data of the area to be retested at the current retest time. Compare the state data obtained at the current retest time with the state data of the area to be retested at the previous acquisition time to obtain the surface reflection change, membrane surface flow change, edge shrinkage change, and drying uniformity change of the area to be retested. S63. Based on the changes in surface reflection, film flow, edge retraction, and drying uniformity, re-execute the state value transformation, and combine the updated unit length transmission speed and the updated actual residence time to re-execute the weighted calculation to obtain the film stability result of the area to be retested. S64. Using the updated unit length transmission speed, the updated actual dwell time and the partition position corresponding to the area to be retested as input, recalculate the dynamic control threshold corresponding to the area to be retested, and compare the newly obtained membrane stability result with the recalculated dynamic control threshold. When the newly obtained membrane stability result is not lower than the recalculated dynamic control threshold, output the release command for the corresponding area to be retested and terminate the retesting cycle of the current area to be retested. S65. When the obtained membrane stability result is lower than the recalculated dynamic control threshold, calculate the retest judgment difference corresponding to the area to be retested, and determine the non-compliant dominant state type based on the retest judgment difference, reflection state characterization value, flow state characterization value, shrinkage state characterization value and dry state characterization value. When the current retest cycle has not reached the preset cycle limit, return the area to be retested to the in-situ adjustment processing step corresponding to the non-compliant dominant state type and re-execute the adjustment, and increment the current retest cycle before re-entering the retest process. S66. When the current retesting cycle reaches the preset cycle limit and the re-obtained membrane stability result is still lower than the recalculated dynamic control threshold, stop the step of returning the area to be retested to the original position for adjustment, output the cycle termination command, and mark the area to be retested as the retesting termination area. S67. Mark the results of the areas to be retested for the output release command, return to original position adjustment processing step, or output loop termination command, and output the corresponding marked results for subsequent continuous processing, re-in-situ adjustment processing, or termination isolation processing.

9. A method for continuous low-temperature solution preparation of a perovskite-crystalline silicon tandem solar cell according to claim 1, characterized in that, Before a region that has already issued a release command enters the next workstation, a status reorganization process is performed, including the following steps: S71. Read the partition location, regional membrane stability result, dynamic control threshold, adjustment history information, retest result mark and state difference information of adjacent areas corresponding to the area where the release instruction has been output, and form a state resetting input group. S72. Calculate the stability difference value, boundary state difference value, and adjustment inheritance risk value between the region that has issued a release instruction and the adjacent region according to the state reorganization input group, and determine the region that has issued a release instruction as the region to be reorganized when at least one of the stability difference value, boundary state difference value, or adjustment inheritance risk value exceeds the corresponding preset reorganization threshold. S73. Perform state remodeling processing on the region to be remodeled along the transmission direction according to the partition location. The state remodeling processing includes determining the membrane transition length based on the stability difference value, determining the boundary slow release range based on the boundary state difference value, and determining the surface homogenization intensity based on the adjustment inheritance risk value, so that the membrane state, boundary state and surface state of the region to be remodeled along the transmission direction are transformed from a local abrupt distribution to a continuous transition distribution, and the remodeled transition region is obtained. S74. Re-collect the stability difference value and boundary state difference value between the reorganized transition region and its adjacent regions, and compare the re-collected difference results with the corresponding preset reorganization threshold. If the re-collected difference results do not exceed the corresponding preset reorganization threshold, the reorganized transition region is determined as a continuous input region. If the re-collected difference results still exceed the corresponding preset reorganization threshold, continue to perform state reorganization processing until the continuous input condition is met. S75. The continuous input area is continuously sent to the subsequent functional layer construction station or the subsequent perovskite layer shaping station according to the current continuous transmission direction.

10. A method for continuous low-temperature solution preparation of a perovskite-crystalline silicon tandem solar cell according to claim 9, characterized in that, The continuous input areas in the subsequent functional layer construction station or the subsequent perovskite layer shaping station are re-inputted as the areas to be tested in the next round of online acquisition, state value conversion, weighted calculation, dynamic takeover threshold comparison, in-situ adjustment, retesting, release and state reorganization process, until the continuous construction of the perovskite layer and its upper functional layer is completed, and the perovskite-crystalline silicon tandem solar cell is obtained.

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