An interconnect structure, integrated circuit, and electrical device

Abstract

This application provides an interconnect structure, integrated circuit, and electrical device, relating to the field of semiconductor technology. The interconnect structure includes a metal layer and a first via layer; the thickness direction of the first via layer is a first direction, and a metal layer is disposed on at least one side of the first via layer along the first direction; the metal layer includes at least one metal line embedded within the metal layer, and the first via layer includes at least one first via structure embedded within the first via layer; each first via structure extends along the first direction, and at least one end of each first via structure along the first direction is electrically connected to a metal line on the corresponding side; the first via structure is configured to switch between on and off states. Adjustments to the interconnect structure connections in this application can be achieved simply by switching the on and off states of the first via structures, without changing the physical layout of the interconnect structure. Therefore, the circuit connections of the interconnect structure can be adjusted without re-fabrication and the creation of new photomasks, reducing the cost of the interconnect structure.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to an interconnect structure, integrated circuit, and electrical device. Background Technology

[0002] Integrated circuits include device layers, metal layers, and via layers, with the metal layers and via layers stacked together to form an interconnect structure. In this interconnect structure, both the metal layers and via layers are fabricated using back-end of line (BEOL) processes, and during the BEOL process, each layer of the metal layer and via layer needs to be shaped using a corresponding photomask.

[0003] As integrated circuits are iterated and upgraded, the circuit connections required by their internal interconnect structures also need to be updated and adjusted accordingly. However, once the existing interconnect structure is fabricated, the internal connection relationships are fixed and cannot be changed. When new connection requirements need to be met, the original interconnect structure cannot be used, and a new interconnect structure must be fabricated, which increases the cost of the interconnect structure. Summary of the Invention

[0004] This application aims to provide an interconnect structure, integrated circuit, and electrical device that at least solves the problem that when new connection requirements need to be adapted, the original interconnect structure cannot continue to be used and a new interconnect structure can only be fabricated by re-tasking, which leads to an increase in the cost of the interconnect structure.

[0005] To solve the above-mentioned technical problems, this application is implemented as follows: In a first aspect, embodiments of this application propose an interconnect structure, the interconnect structure comprising: a metal layer and a first via layer; The thickness direction of the first via layer is a first direction, and the metal layer is provided on at least one side of the first via layer along the first direction; The metal layer includes at least one metal wire embedded in the metal layer, and the first via layer includes at least one first via structure embedded in the first via layer; each first via structure extends along the first direction, and at least one end of each first via structure along the first direction is electrically connected to one of the metal wires on the corresponding side. The first via structure is configured to switch between on and off states.

[0006] Optionally, the first via structure is configured to be able to melt, so that the first via structure can switch from a conducting state to a blocking state.

[0007] Optionally, the first via structure is configured to melt under an electrical signal of a preset power.

[0008] Optionally, the first via structure is cylindrical in shape; The extension direction of each of the metal wires is perpendicular to the first direction, and the cross-sectional area of ​​the first via structure perpendicular to the first direction is smaller than the cross-sectional area of ​​the metal wire perpendicular to its own extension direction.

[0009] Optionally, the power value of the electrical signal is positively correlated with the cross-sectional area of ​​the first via structure perpendicular to the first direction.

[0010] Optionally, the first via structure includes a fusible portion and a connecting portion; The connecting portion is provided on both sides of the fuse portion along the first direction, and the connecting portion is electrically connected to the fuse portion and the metal wire at both ends along the first direction, respectively. The extension direction of each of the metal wires is perpendicular to the first direction, and the cross-sectional area of ​​the fused portion perpendicular to the first direction is smaller than the cross-sectional area of ​​the metal wire perpendicular to its own extension direction; the cross-sectional area of ​​the fused portion perpendicular to the first direction is smaller than the cross-sectional area of ​​the connecting portion perpendicular to the first direction.

[0011] Optionally, the power value of the electrical signal is positively correlated with the cross-sectional area of ​​the fuse portion perpendicular to the first direction.

[0012] Optionally, the material of the first via structure is the same as the material of the metal wire.

[0013] Optionally, the melting point of the material of the first via structure is lower than the melting point of the material of the metal wire.

[0014] Optionally, the power value of the electrical signal is positively correlated with the melting point of the material of the first via structure.

[0015] Optionally, the first via structure has a first resistive state and a second resistive state, wherein the resistance value of the first resistive state is less than the resistance value of the second resistive state; in the first resistive state, the first via structure is in a conductive state; in the second resistive state, the first via structure is in a blocked state. The first via structure is configured to switch between the first resistive state and the second resistive state.

[0016] Optionally, the first via structure is configured to switch between a first resistive state and a second resistive state according to the polarity of the electrical signal.

[0017] Optionally, the material of the first via structure is a resistive switching material; The polarity of the electrical signal is either a first polarity or a second polarity, the second polarity being opposite to the first polarity; under the first polarity, the first via structure has the first resistive state; under the second polarity, the first via structure has the second resistive state.

[0018] Optionally, the number of the first via layers is at least two, and the on / off control methods of the first via structures in different first via layers are set independently. The on / off control method of the first via structure in each first via layer is one of the following: melting and resistance switching.

[0019] Optionally, the interconnect structure further includes a second via layer; The second via layer has the metal layer on at least one side along the first direction. The second via layer includes at least one second via structure embedded in the second via layer. Each second via structure extends along the first direction, and each second via structure is electrically connected to the metal line on the corresponding side along at least one side of the first direction. The on / off state of the second via structure is fixed.

[0020] Optionally, the number of the first via layers is at least two, and a second via layer is provided between at least two partially adjacent first via layers.

[0021] Optionally, the second via layer is disposed on one side of the interconnect structure along the first direction, and the first via layer is disposed on the other side of the interconnect structure along the first direction.

[0022] Optionally, the first via layer further includes a dielectric substrate; The dielectric substrate has at least one through hole extending through the dielectric substrate along the first direction, and each through hole is correspondingly provided with a first via structure, the first via structure being embedded in the through hole.

[0023] In a second aspect, embodiments of this application provide an integrated circuit including the interconnect structure as described in any one of the first aspects.

[0024] Thirdly, embodiments of this application provide an electrical device including an integrated circuit as described in the second aspect.

[0025] In the embodiments of this application, a metal layer is provided on at least one side of the first via layer along the first direction, thereby enabling connection within the same metal layer using metal lines embedded in the metal layer, and connecting the metal lines on the corresponding side using a first via structure embedded in the first via layer and extending along the first direction. Based on this, the on / off state of the first via structure can be switched, allowing flexible control of the electrical connection of the metal lines; furthermore, the adjustment of the interconnection structure connection relationship can be achieved simply by switching the on / off state of the first via structure, without changing the physical layout of the interconnection structure. Therefore, the circuit connection relationship of the interconnection structure can be adjusted without re-fabrication and fabrication of new masks, reducing the cost of the interconnection structure. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the accompanying drawings used in the description of the embodiments will be briefly introduced below, wherein: Figure 1 This is a schematic diagram of an interconnection structure provided in one embodiment of this application; Figure 2 A front view of an interconnection structure provided in one embodiment of this application; Figure 3 This is a schematic diagram illustrating the principle of a cylindrical first through-hole structure with a relatively small cross-sectional area, provided in one embodiment of this application. Figure 4 A schematic diagram illustrating the principle of a relatively small cross-sectional area of ​​the fuse portion provided in one embodiment of this application; Figure 5 A schematic diagram illustrating the principle of first via structure melting in one embodiment of this application; Figure 6 A schematic diagram illustrating the principle of the first step in fusing the first via structure to reconstruct the interconnect structure according to an embodiment of this application; Figure 7 A schematic diagram illustrating the principle of the second step of fusing the first via structure to reconstruct the interconnect structure according to an embodiment of this application; Figure 8 This is a schematic diagram illustrating the principle of switching the resistance state of a first via structure to conduct the first via structure according to an embodiment of this application. Figure 9 This is a schematic diagram illustrating the principle of switching the resistance state of the first via structure to block the first via structure according to an embodiment of this application. Figure 10 A schematic diagram of an interconnect structure that simultaneously includes a first via structure and a second via structure, provided in one embodiment of this application; Figure 11 This is a schematic diagram illustrating the principle of a second via layer between two adjacent first via layers provided in one embodiment of this application. Figure 12 A schematic diagram illustrating the principle that the first via layer and the second via layer are respectively disposed on opposite sides of the interconnect structure according to an embodiment of this application; Figure 13 This is a schematic diagram of the structure of the first via layer provided in one embodiment of this application.

[0027] Figure label: 100: Metal layer; 110: Metal wire; 200: First via layer; 210: First via structure; 211: Fuse section; 212: Connecting section; 220: Dielectric substrate; 220a: Through hole; 300: Second via layer; 310: Second via structure; 400: Power supply; Z: First direction; X: Second direction; Y: Third direction. Detailed Implementation

[0028] The embodiments of this application will now be described in detail. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0029] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0030] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0031] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0032] To clearly understand the technical solution of this application, the application scenarios of interconnection structures, integrated circuits, and electrical equipment will be explained first.

[0033] Integrated circuits include device layers, metal layers, and via layers. The metal layer and the first via layer can be configured as a single layer or multiple layers as required. When there is a single metal layer, the first via layer is directly connected to the metal layer. When there are multiple metal layers, the metal layer and the first via layer are stacked alternately. Both schemes can form an interconnect structure.

[0034] In this interconnect structure, both the metal layer and the via layer are fabricated using back-end processes. These back-end processes are used to build metal interconnect layers on the device layer to achieve electrical connections. During these back-end processes, each layer of the metal layer and via layer needs to be shaped using a corresponding photomask. The photomask, as the master template in the integrated circuit photolithography process, is used to transfer the circuit patterns on it to the surface of the integrated circuit. The photomask pattern directly determines the final connection shape of the interconnect structure.

[0035] As integrated circuit functions iterate and application scenarios upgrade, the circuit connections required by their internal interconnect structures also need to be updated and adjusted accordingly. However, once the existing interconnect structure is fabricated, the internal connection relationships are fixed and cannot be changed; when new connection requirements need to be met, the original interconnect structure cannot be used, and a new interconnect structure must be fabricated.

[0036] Meanwhile, the device layer is fabricated using front-end (FEOL) processes, which are used to manufacture transistors and other components on silicon wafers. If the device layer architecture remains consistent, the same masks can be reused for production in the front-end process. However, changes to the interconnect relationships can only be achieved through back-end processes. Even if only a few metal layer or via layer connections need to be modified, new masks for the corresponding layers still need to be fabricated. Therefore, each re-fabrication requires the design and fabrication of new metal layer and via layer masks. However, with current integrated circuit technology, the manufacturing cost of masks is extremely high, and frequent mask updates directly increase the cost of the interconnect structure and even the integrated circuit itself.

[0037] Furthermore, integrated circuit manufacturing lines have fixed production schedules. Re-fabrication and mask fabrication consume a significant amount of additional production time, resulting not only in substantial time costs but also delays in integrated circuit functional upgrades and iterative applications. Even with Engineering Change Orders (ECOs), where only minor wiring modifications to metal and via layers are made without re-fabricating device layers, all metal layers, and via layers, the economic pressure and time consumption from mask fabrication and re-fabrication remain unavoidable in scenarios requiring large-scale, high-frequency changes to interconnect relationships. This ultimately hinders the efficiency of rapid iterative upgrades in integrated circuits.

[0038] Therefore, embodiments of this application provide an interconnect structure, integrated circuit, and electrical device to solve some or all of the technical problems existing in the prior art. The interconnect structure, integrated circuit, and electrical device provided in this application will be described in detail below with reference to the accompanying drawings and specific embodiments and application scenarios.

[0039] like Figure 1 and Figure 2 As shown, according to some embodiments of this application, the interconnect structure includes a metal layer 100 and a first via layer 200; the thickness direction of the first via layer 200 is a first direction Z, and the metal layer 100 is provided on at least one side of the first via layer 200 along the first direction Z; the metal layer 100 includes at least one metal wire 110 embedded in the metal layer 100, and the first via layer 200 includes at least one first via structure 210 embedded in the first via layer 200; each first via structure 210 extends along the first direction Z, and at least one end of each first via structure 210 along the first direction Z is electrically connected to a metal wire 110 on the corresponding side; the first via structure 210 is configured to switch between on and off states.

[0040] In the embodiments of this application, a metal layer 100 is provided on at least one side of the first via layer 200 along the first direction Z, thereby enabling connection within the same metal layer 100 using metal lines 110 embedded in the metal layer 100, and connecting the metal lines 110 on the corresponding side using a first via structure 210 embedded in the first via layer 200 and extending along the first direction Z. Based on this, the on / off state of the first via structure 210 can be switched, allowing flexible control of the electrical connection of the metal lines 110; furthermore, the adjustment of the interconnection structure connection relationship can be achieved simply by switching the on / off state of the first via structure 210, without changing the physical layout of the interconnection structure. Therefore, the circuit connection relationship of the interconnection structure can be adjusted without re-fabrication and fabrication of a new mask, reducing the cost of updating the interconnection structure.

[0041] Specifically, the interconnect structure is arranged above the device layer of the integrated circuit to enable electrical signal conduction between components in the device layer, as well as between components in the device layer and external circuits.

[0042] The interconnect structure includes a metal layer 100 and a first via layer 200. The metal layer 100 is a conductor layer made of metal material in the interconnect structure. The metal layer 100 can be a sheet-like layer, a plate-like layer, or a wiring carrier layer, etc. The first via layer 200 is a through-hole structure layer. The first via layer 200 is filled with conductive material to complete the interlayer signal and power conduction.

[0043] The thickness direction of the first via layer 200 is the first direction Z, which is perpendicular to the stacking surface of the metal layer 100 and the first via layer 200. The first direction Z can be a vertical direction, a direction perpendicular to the wafer surface, or the thickness direction of the integrated circuit. The number of metal layers 100 is at least one, and the number of first via layers 200 can be adaptively set. Along the first direction Z, the metal layer 100 and the first via layer 200 are directly connected or alternately stacked, so that the first via layer 200 has metal layers 100 on one side or opposite sides along the first direction Z.

[0044] For example, if there is one metal layer 100 and one first via layer 200, the first via layer 200 has a metal layer 100 on one side along the first direction Z and a pad or bump on the other side. The pad and bump are used to connect external pins, leads, or for packaging. As another example, if there are two metal layers 100 and two first via layers 200, one of the first via layers 200 has a metal layer 100 on one side along the first direction Z and a pad or bump on the other side, while the other first via layer 200 has metal layers 100 on both sides along the first direction Z.

[0045] The metal layer 100 includes an insulating dielectric layer and at least one metal wire 110 embedded therein. The insulating dielectric layer of the metal layer 100 wraps around the outer periphery of the metal wire 110 to achieve electrical isolation and support positioning between adjacent metal wires 110. The metal layer 100 is used to achieve electrical interconnection within the same metal layer 100 to transmit electrical signals or electrical energy.

[0046] The metal wire 110 may extend partially or entirely along a direction perpendicular to the first direction Z. The metal wire 110 is a linear conductor made of copper, aluminum, tungsten, or a conductive alloy. The shape of the metal wire 110 may be straight, broken, curved, or grid-like.

[0047] Correspondingly, the first via layer 200 includes an insulating dielectric layer and at least one first via structure 210 embedded therein. The insulating dielectric layer of the first via layer 200 wraps around the outer periphery of the first via structure 210 to achieve electrical isolation and support positioning between adjacent first via structures 210. The first via structure 210 is used to provide a conductive carrier in the first direction Z to realize the layout of the electrical connection channel.

[0048] Each first via structure 210 extends along the first direction Z. The first via structure 210 is a linear conductor made of conductive metals such as copper, aluminum, tungsten, or alloys. The shape of the first via structure 210 can be cylindrical, square, conical, or elongated. One or both ends of each first via structure 210 along the first direction Z are electrically connected to a metal wire 110 on the corresponding side. The connection method between the first via structure 210 and the metal wire 110 can be contact conduction, welding conduction, or bonding conduction.

[0049] The first via structure 210 is configured to switch between on and off states. This switching can be a unidirectional switch from a conducting state to a blocking state, which can be achieved by melting, laser burning, or mechanical crushing. Alternatively, the switching can be a unidirectional switch from a blocking state to a conducting state, which can be achieved by dielectric breakdown conduction, metal diffusion conduction, or solder melting conduction. Furthermore, the switching can be a free switch between the two states, which can be achieved by resistance switching or controllable switch switching.

[0050] In one possible embodiment, the number of first via layers 200 is at least two. The on / off control methods of the first via structures 210 in different first via layers 200 can be set independently, or some can be the same while others are different, or all can be the same. In addition, the via structures of all via layers can be configured to switch on / off states, or the via structures of some via layers can be configured to switch on / off states.

[0051] Furthermore, the adjustment of the interconnection relationship is achieved simply by switching the on / off state of the first via structure 210, without changing the physical layout of the interconnection structure. Therefore, there is no need to re-fabricate and make a new mask, which can overcome the limitations of small-scale ECO modifications, avoid the economic costs and time losses caused by mask making and re-fabrication, and thus improve the efficiency of integrated circuit iteration and upgrade.

[0052] Optionally, the first via structure 210 is configured to be fused to allow the first via structure 210 to switch from a conducting state to a blocking state.

[0053] In the embodiments of this application, by configuring the first via structure 210 as fusible, the irreversible nature of the fusing process enables the first via structure 210 to switch unidirectionally from a conducting state to a blocking state, thereby realizing the adjustment of the circuit connection relationship of the interconnection structure.

[0054] Specifically, the first via structure 210 is configured to be fusible. Fusibility refers to the irreversible melting, burning, or cracking of the conductive portion of the first via structure 210 by applying electrical, thermal, or optical excitation, thereby breaking the conductive path. Specifically, the fusibility can be achieved by high-current Joule heating, laser irradiation, or localized heating. The first via structure 210 can be entirely fusible, or only a portion of it can be fusible. When only a portion of it is fusible, this fusible area can be located in the middle or at the end of the body of the first via structure 210.

[0055] After being triggered to melt, the first via structure 210 can permanently disconnect its own conductive path, thereby reliably switching the first via structure 210 from the conducting state to the blocking state, and thus realizing the unidirectional adjustment of the interconnection structure circuit connection relationship.

[0056] Optionally, the first via structure 210 is configured to melt under an electrical signal of a preset power.

[0057] In the embodiments of this application, by configuring the first via structure 210 to be able to melt under a preset power electrical signal, the first via structure 210 can be triggered to melt when the preset power electrical signal is applied, so that the first via structure 210 switches from the conducting state to the blocking state, thereby improving the accuracy and controllability of the interconnection structure circuit connection relationship adjustment.

[0058] Specifically, the first via structure 210 is configured to fuse under a preset power electrical signal. The preset power electrical signal refers to an electrical signal that has been pre-set and can accurately trigger the fuse to break. This electrical signal can be a constant DC signal, an alternating current signal, a transient impulse current signal, or a pulse signal, etc.

[0059] In practical applications, a corresponding electrical signal with a preset power can be applied between the two metal wires 110 that need to be disconnected to burn off the first via structure 210 connecting the two metal wires 110. The preset power of the electrical signal is positively correlated with the conductive cross-sectional area of ​​the first via structure 210 and also positively correlated with the melting point of the material of the first via structure 210. Those skilled in the art can set the corresponding electrical signal power according to the adaptability of the cross-sectional area of ​​the first via structure 210 and the melting point of the material.

[0060] Optionally, such as Figure 1 and Figure 3 As shown, the first via structure 210 is cylindrical in shape; the extension direction of each metal line 110 is perpendicular to the first direction Z, and the cross-sectional area of ​​the first via structure 210 perpendicular to the first direction Z is smaller than the cross-sectional area of ​​the metal line 110 perpendicular to its own extension direction.

[0061] In the embodiments of this application, the first via structure 210 is cylindrical in shape, and the extension direction of each metal wire 110 is perpendicular to the first direction Z. Based on this structure, the cross-sectional area of ​​the first via structure 210 perpendicular to the first direction Z is smaller than the cross-sectional area of ​​the metal wire 110 perpendicular to its own extension direction. This makes the first via structure 210 more prone to heating and melting than the metal wire 110 under the action of a preset power electrical signal, while protecting the metal wire 110 from damage, thereby reliably realizing the switching of the first via structure 210 from the conducting state to the blocking state.

[0062] Specifically, the first via structure 210 is cylindrical in shape. A cylindrical shape refers to a three-dimensional structure with a regular outline along its extension direction. Therefore, the cross-sectional shape of the first via structure 210 perpendicular to the first direction Z can be circular, elliptical, or polygonal, such as triangular, rectangular, or square. At the same time, due to the characteristics of subsequent processes, the cross-sectional area of ​​the first via structure 210 perpendicular to the first direction Z is usually equal everywhere.

[0063] The metal lines 110 in the interconnect structure can adopt various routing methods, including parallel routing, diagonal routing, and orthogonal routing. In all routing methods, the extension direction of each metal line 110 is perpendicular to the first direction Z. Specifically, parallel routing refers to the metal lines 110 in the same metal layer 100 extending in the same direction; diagonal routing refers to the metal lines 110 extending at a certain angle to the wafer orientation; and orthogonal routing refers to the metal lines 110 in adjacent metal layers 100 extending in mutually perpendicular directions.

[0064] Taking orthogonal routing as an example, within the metal layer 100 along the first direction Z of the first via structure 210, the extension direction of the metal line 110 is the second direction X; within the metal layer 100 along the other side of the first direction Z of the first via structure 210, the extension direction of the metal line 110 is the third direction Y, and the first direction Z, the second direction X, and the third direction Y are all perpendicular to each other. The cross-sectional shape of the metal line 110 perpendicular to its own extension direction can be rectangular.

[0065] The cross-sectional area of ​​the first via structure 210 perpendicular to the first direction Z is smaller than the cross-sectional area of ​​the metal wire 110 perpendicular to its own extension direction. This size configuration allows the first via structure 210 to have a higher current density and more concentrated heat generation under the same electrical signal. As a result, the first via structure 210 is more likely to overheat and melt under the action of an electrical signal of preset power compared to the metal wire 110.

[0066] Optionally, the power value of the electrical signal is positively correlated with the cross-sectional area of ​​the first via structure 210 perpendicular to the first direction Z.

[0067] In the embodiments of this application, by setting the power value of the electrical signal to be positively correlated with the cross-sectional area of ​​the first via structure 210 perpendicular to the first direction Z, it can be ensured that the first via structure 210 stably achieves melting and switches from the conducting state to the blocking state under the action of the corresponding power electrical signal.

[0068] Optionally, such as Figure 1 and Figure 4 As shown, the first via structure 210 includes a fusing portion 211 and a connecting portion 212; the fusing portion 211 has connecting portions 212 on both opposite sides along the first direction Z, and the two opposite ends of the connecting portions 212 along the first direction Z are electrically connected to the fusing portion 211 and the metal wire 110 respectively; the extension direction of each metal wire 110 is perpendicular to the first direction Z, the cross-sectional area of ​​the fusing portion 211 perpendicular to the first direction Z is smaller than the cross-sectional area of ​​the metal wire 110 perpendicular to its own extension direction; the cross-sectional area of ​​the fusing portion 211 perpendicular to the first direction Z is smaller than the cross-sectional area of ​​the connecting portion 212 perpendicular to the first direction Z.

[0069] In the embodiments of this application, the fuse portion 211 of the first via structure 210 is provided with connecting portions 212 on both sides of the first direction Z. The connecting portions 212 are electrically connected to the fuse portion 211 and the metal wire 110 at their respective ends along the first direction Z. At the same time, the extension direction of each metal wire 110 is perpendicular to the first direction Z. Based on this structure, the cross-sectional area of ​​the fuse portion 211 perpendicular to the first direction Z is smaller than the cross-sectional area of ​​the metal wire 110 perpendicular to its own extension direction. The cross-sectional area of ​​the fuse portion 211 perpendicular to the first direction Z is smaller than the cross-sectional area of ​​the connecting portion 212 perpendicular to the first direction Z. This makes the fuse portion 211 more likely to heat up and melt under the action of a preset power electrical signal than the metal wire 110 and the connecting portion 212. At the same time, it can protect the connecting portion 212 and the metal wire 110 from damage, thereby reliably realizing the switching of the first via structure 210 from the conducting state to the blocking state.

[0070] Specifically, the first via structure 210 includes a fusing portion 211 and a connecting portion 212. Both the fusing portion 211 and the connecting portion 212 are cylindrical conductive structures extending along the first direction Z. The cross-sectional shape of both perpendicular to the first direction Z can be circular, elliptical, or polygonal, such as triangular, rectangular, or square. Furthermore, due to the characteristics of subsequent processes, the cross-sectional area of ​​the fusing portion 211 perpendicular to the first direction Z is generally equal everywhere, and the cross-sectional area of ​​the connecting portion 212 perpendicular to the first direction Z is also generally equal everywhere.

[0071] In the back-end fabrication process of the interconnect structure, the fused portion 211 and the connecting portion 212 can be integrally formed using processes such as deposition, etching, or dual damascene. Exemplarily, the fused portion 211 and the connecting portion 212 can be formed through stepwise deposition, cyclic photolithography, and filling; specifically, they are formed sequentially using a three-cycle process: the first cycle performs photolithography and fills conductive material within the first via layer 200 to form the connecting portion 212 on one side; the second cycle performs photolithography and fills conductive material between the already formed connecting portions 212 to form the fused portion 211, ensuring that the cross-sectional area of ​​the fused portion 211 perpendicular to the first direction Z is smaller than the cross-sectional area of ​​the connecting portion 212 perpendicular to the first direction Z; the third cycle performs photolithography and fills conductive material on the other side of the fused portion 211 to form the connecting portion 212 on the other side. The connecting portion 212 and the fused portion 211 are electrically connected through direct contact, ultimately forming a complete first via structure 210.

[0072] The wiring method of the metal line 110 in the interconnection structure can be referred to the aforementioned embodiment, and will not be repeated here.

[0073] The cross-sectional area of ​​the fuse portion 211 perpendicular to the first direction Z is smaller than the cross-sectional area of ​​the metal wire 110 perpendicular to its own extension direction, and the cross-sectional area of ​​the fuse portion 211 perpendicular to the first direction Z is smaller than the cross-sectional area of ​​the connecting portion 212 perpendicular to the first direction Z. This size configuration allows the fuse portion 211 to have a higher current density and more concentrated heat generation under the same electrical signal. As a result, the fuse portion 211 is more likely to heat up and melt under the action of an electrical signal of preset power than the metal wire 110 and the connecting portion 212.

[0074] Furthermore, during the melting process, the melting part 211 can protect the connection part 212 and the metal wire 110 from being damaged by overheating, thereby ensuring the structural integrity and conductivity reliability of the metal wire 110 and preventing the normal operation of other conductive paths in the interconnection structure from being affected by damage to the metal wire 110.

[0075] Optionally, the power value of the electrical signal is positively correlated with the cross-sectional area of ​​the fuse portion 211 perpendicular to the first direction Z.

[0076] In the embodiments of this application, by setting the power value of the electrical signal to be positively correlated with the cross-sectional area of ​​the fuse part 211 perpendicular to the first direction Z, it can be ensured that the fuse part 211 stably achieves fusing and switches from the conducting state to the blocking state under the action of the corresponding power electrical signal.

[0077] Optionally, the material of the first via structure 210 is the same as that of the metal wire 110.

[0078] In the embodiments of this application, by setting the material of the first via structure 210 to be the same as that of the metal line 110, the types of materials in the subsequent process can be reduced, the process switching steps between different materials can be eliminated, thereby simplifying the subsequent fabrication process of the interconnect structure and reducing the complexity of the process implementation, while also ensuring the reliability of the electrical connection between the first via structure 210 and the metal line 110.

[0079] Specifically, the first via structure 210 and the metal wire 110 are made of the same material, which are both conductive materials commonly used in subsequent processes. Specifically, copper (Cu), tungsten (W), or aluminum (Al) can be selected. For example, when the metal wire 110 in the metal layer 100 is made of copper (Cu), the first via structure 210 in the first via layer 200 is also made of copper (Cu). The two are only differentiated by structural shaping. That is, by utilizing the structural feature of the first via structure 210 or the smaller cross-sectional area of ​​the fuse part 211 therein, it is easier to burn off under the action of a preset power electrical signal, thereby realizing the fuse function.

[0080] For example, when a first via structure 210 is melted, such as Figure 5 As shown, the first via structure 210 is electrically connected between two metal wires 110. At this time, the first via structure 210 is in a conductive state, which can realize the transmission of electrical signals between the two metal wires 110.

[0081] The positive and negative terminals of a power supply 400 are electrically connected to the two metal wires 110 respectively. The power supply 400 is configured to output an electrical signal with a preset power. When the power supply 400 outputs an electrical signal, the current flows through the first via structure 210, causing the first via structure 210 to be melted, thereby switching from a conducting state to a blocking state and disconnecting the electrical connection between the two metal wires 110.

[0082] In one embodiment of this application, when it is necessary to reconfigure the interconnect structure, such as Figure 6 and Figure 7 As shown, in two adjacent metal layers 100 arranged along the first direction Z, one metal layer 100 has four embedded metal lines 110, namely a, b, c, and d; the other metal layer 100 has four embedded metal lines 110, namely h, i, j, and k. Among the above eight metal lines 110, the metal lines 110 of different layers are paired in pairs and electrically connected through a first via structure 210. Each first via structure 210 is initially in a conductive state, which can realize the transmission of electrical signals between the corresponding metal lines 110; wherein, the first via structure 210 in the conductive state is represented by a circle.

[0083] When it is necessary to melt the first via structure 210 between metal wire a and metal wire i, the positive and negative terminals of the power supply 400 are electrically connected to metal wire a and metal wire i, respectively. After the power supply 400 outputs an electrical signal with a preset power, the current flows through the first via structure 210 between metal wire a and metal wire i, causing the first via structure 210 to melt due to heat, switching from a conducting state to a blocking state, thereby disconnecting the electrical connection between metal wire a and metal wire i. The first via structure 210 in the blocking state is represented by a fork shape.

[0084] Accordingly, when it is necessary to fuse the first via structure 210 between metal wire b and metal wire j, the positive and negative terminals of the power supply 400 are electrically connected to metal wire b and metal wire j respectively, and the same fuse control method is used to achieve the fuse of the first via structure 210.

[0085] It is understandable that a single power supply 400 can be used to sequentially fuse each of the first via structures 210 to be fused, or multiple power supplies 400 can be set so that each power supply 400 fuses one first via structure 210 respectively, thereby achieving synchronous fusing of multiple first via structures 210 and improving the efficiency of adjusting the interconnection relationship.

[0086] Optionally, the melting point of the material of the first via structure 210 is lower than that of the material of the metal wire 110.

[0087] In the embodiments of this application, the melting point of the material of the first via structure 210 is set to be lower than that of the material of the metal wire 110, so that the first via structure 210 is more likely to heat up and melt under the action of an electrical signal of preset power than the metal wire 110, thereby reliably realizing the switching of the first via structure 210 from the conducting state to the blocking state.

[0088] Specifically, the melting point of the material of the first via structure 210 is lower than that of the material of the metal wire 110. Since the melting point is the minimum temperature required for a material to melt, the two materials differ, therefore the materials of the first via structure 210 and the metal wire 110 must be different. The first via structure 210 can be made of a low-melting-point material, such as lead (Pb), lead alloys, silver alloys, or aluminum (Al); correspondingly, the metal wire 110 can be made of a conductive material with a relatively high melting point, such as copper (Cu), tungsten (W), gold (Au), aluminum (Al), nickel (Ni), or palladium (Pd). When a pulse signal of a certain voltage is applied between the two metal wires 110 to be disconnected, the current flowing through the first via structure 210 will generate heat. Due to its lower melting point, it can preferentially reach the melting temperature and be burned off.

[0089] Optionally, the power value of the electrical signal is positively correlated with the melting point of the material of the first via structure 210.

[0090] In the embodiments of this application, by setting the power value of the electrical signal to be positively correlated with the melting point of the material of the first via structure 210, it can be ensured that the first via structure 210 stably achieves melting and switches from the conducting state to the blocking state under the action of the corresponding power electrical signal.

[0091] Optionally, the first via structure 210 has a first resistance state and a second resistance state, the resistance value of the first resistance state being less than the resistance value of the second resistance state; in the first resistance state, the first via structure 210 is in a conducting state; in the second resistance state, the first via structure 210 is in a blocking state; the first via structure 210 is configured to switch between the first resistance state and the second resistance state.

[0092] In the embodiments of this application, the first via structure 210 is made to have a first resistive state with a smaller resistance value and corresponding to the conducting state, and a second resistive state with a larger resistance value and corresponding to the blocking state, and the first via structure 210 is made to be able to switch between the two resistive states, thereby enabling the first via structure 210 to switch between the first resistive state and the second resistive state, thereby realizing the adjustment of the circuit connection relationship of the interconnection structure.

[0093] Specifically, the first via structure 210 has a first resistance state and a second resistance state. The first resistance state is a low resistance state with a small resistance value. In the first resistance state, the first via structure 210 is in a conducting state, which can realize the transmission of electrical signals between the metal lines 110 on both sides. The second resistance state is a high resistance state with a large resistance value. In the second resistance state, the first via structure 210 is in a blocking state, which cannot realize the transmission of electrical signals between the metal lines 110 on both sides.

[0094] The first via structure 210 is configured to switch between a first resistive state and a second resistive state. The resistance state switching of the first via structure 210 can be achieved in various ways, such as switching based on different polarities of the applied electrical signal, switching based on different voltage amplitudes or pulse widths of the applied electrical signal, or switching based on the lattice state transition of the resistive switching material inside the first via structure 210.

[0095] Therefore, the first via structure 210 can flexibly switch between the conducting state and the blocking state according to actual usage requirements, thereby realizing the adjustment and reconfiguration of the internal circuit connection relationship of the interconnect structure, and improving the flexibility and applicability of the interconnect structure.

[0096] Optionally, the first via structure 210 is configured to switch between a first resistive state and a second resistive state according to the polarity of the electrical signal.

[0097] In the embodiments of this application, by configuring the first via structure 210 to switch between a first resistive state and a second resistive state according to the polarity of the electrical signal, the switching control method of the first via structure between the conducting state and the blocking state can be simplified, and the convenience and controllability of the state change can be improved.

[0098] Specifically, the first via structure 210 is configured to switch between resistive states according to the polarity of the electrical signal, that is, by changing the positive or negative direction of the electrical signal applied to both ends of the first via structure 210, it can be controlled to switch between the first resistive state and the second resistive state.

[0099] For example, applying a positive voltage signal to the first via structure 210 can maintain or switch it to a first resistive state of low resistance conduction; applying a reverse voltage signal will switch it to a second resistive state of high resistance blocking. Alternatively, the correspondence can be reversed according to actual control requirements, i.e., the reverse voltage corresponds to the first resistive state, and the positive voltage corresponds to the second resistive state.

[0100] This configuration simplifies the switching control of the first via structure 210 between the on and off states. The state change can be achieved simply by adjusting the polarity of the electrical signal, without the need for complex control circuits or multi-parameter adjustments, thereby improving the convenience and controllability of the state change of the first via structure 210.

[0101] It is important to understand that in the second resistance state, the first via structure 210 exhibits a high-resistance blocking state. This blocking is not a mechanical disconnection in terms of physical structure, but rather a high-resistance characteristic formed by the electrical state change of the internal material, which prevents the current from being effectively transmitted, thereby achieving electrical isolation in terms of circuit function.

[0102] Optionally, the material of the first via structure 210 is a resistive switching material; the polarity of the electrical signal is a first polarity or a second polarity, the second polarity being opposite to the first polarity; under the first polarity, the first via structure 210 has a first resistive state; under the second polarity, the first via structure 210 has a second resistive state.

[0103] In the embodiments of this application, the first via structure 210 is made of resistive switching material, and the first polarity and the second polarity electrical signals with opposite polarities correspond to the first resistive state and the second resistive state, respectively. By relying on the inherent characteristics of the resistive switching material, the resistive state can be switched controllably with the polarity of the electrical signal, thereby realizing the flexible adjustment of the interconnection structure circuit connection relationship.

[0104] Specifically, the first via structure 210 is made of a resistive switching material, which can achieve a reversible change in resistance state under the action of an applied electrical signal. Specifically, this type of resistive switching material is compatible with complementary metal-oxide-semiconductor (CMOS) technology, and can be materials such as hafnium oxide, tantalum oxide, titanium dioxide, nickel oxide, zinc oxide, aluminum oxide, zirconium dioxide, tungsten oxide, or gallium oxide. The resistance state switching is mainly achieved through the formation and breakage of oxygen vacancy conductive filaments, or through interface barrier modulation.

[0105] The electrical signal applied to the first via structure 210 has two polarities: a first polarity and a second polarity opposite to the first polarity. Under the action of the first polarity electrical signal, the first via structure 210 exhibits a first resistive state with a lower resistance and is in a conducting state; under the action of the second polarity electrical signal, the first via structure 210 exhibits a second resistive state with a higher resistance and is in a blocking state.

[0106] For example, when switching the resistance state of the first via structure 210 to change its on / off state, the first via structure 210 is electrically connected between the two metal wires 110. Figure 8 As shown, the first via structure 210 is in the second resistance state at this time, corresponding to the blocking state (the first via structure 210 is disconnected in the figure to indicate its blocking state), and the electrical connection between the two metal wires 110 is broken.

[0107] The positive terminal of the power supply 400 is electrically connected to the metal wire 110 located in the upper metal layer 100 of the two metal wires 110, and the negative terminal of the power supply 400 is electrically connected to the metal wire 110 located in the lower metal layer 100 of the two metal wires 110. When the power supply 400 outputs a first polarity electrical signal, the first via structure 210 switches from the second resistance state to the first resistance state, corresponding to the conduction state, which can realize the transmission of electrical signals between the two metal wires 110.

[0108] Accordingly, such as Figure 9 As shown, the negative terminal of the power supply 400 is electrically connected to the metal wire 110 located in the upper metal layer 100 of the two metal wires 110, and the positive terminal of the power supply 400 is electrically connected to the metal wire 110 located in the lower metal layer 100 of the two metal wires 110. When the power supply 400 outputs a second polarity electrical signal, the first via structure 210 switches from the first resistive state to the second resistive state, corresponding to the blocking state, which can disconnect the electrical signal transmission between the two metal wires 110.

[0109] Optionally, there are at least two first via layers 200, and the on / off control methods of the first via structures 210 in different first via layers 200 are set independently; the on / off control method of the first via structure 210 in each first via layer 200 is one of melting and resistance switching.

[0110] In the embodiments of this application, by setting the number of first via layers 200 to at least two, the on / off control of the first via structures 210 in different first via layers 200 is made independent of each other, and the first via structure 210 in each first via layer 200 can be selected from either fuse or resistance switching on / off control mode. This allows for flexible configuration of the on / off control mode of different first via layers 200, thereby improving the flexibility and adaptability of the overall control scheme of the interconnect structure.

[0111] Specifically, the number of first via layers 200 is set to at least two, and the on / off control methods of the first via structures 210 in different first via layers 200 are independent of each other. That is, the on / off control of the first via structures 210 in each first via layer 200 does not affect or interfere with each other, and can be implemented independently.

[0112] Among them, the fusing method can be divided into two categories: one is to achieve fusing by reducing its own cross-sectional area, and the other is to achieve fusing by using a low melting point material; therefore, the on / off control method of the first via structure 210 in each first via layer 200 is one of the following: fusing by reducing cross-sectional area, fusing by low melting point material, and switching of resistance state.

[0113] For example, the interconnect structure may include three first via layers 200, the first via structure 210 in the first first via layer 200 adopts a reduced cross-sectional area fusing method, the first via structure 210 in the second first via layer 200 adopts a low melting point material fusing method, and the first via structure 210 in the third first via layer 200 adopts a resistive state switching method.

[0114] Optionally, such as Figure 10 As shown, the interconnect structure also includes a second via layer 300; the second via layer 300 has a metal layer 100 on at least one side along the first direction Z, the second via layer 300 includes at least one second via structure 310 embedded in the second via layer 300, each second via structure 310 extends along the first direction Z, and each second via structure 310 is electrically connected to the metal line 110 on the corresponding side along at least one side along the first direction Z; the on / off state of the second via structure 310 is fixed.

[0115] In the embodiments of this application, by adding a second via layer 300 to the interconnect structure, the second via layer 300 is provided with a metal layer 100 on at least one side along the first direction Z, and the second via layer 300 includes at least one second via structure 310 embedded in the second via layer 300. At the same time, the second via structure 310 extends along the first direction Z and is electrically connected to the metal line 110 on the corresponding side along at least one side of the first direction Z, so that the second via structure 310 can provide a fixed conductive path with a constant on / off state for the interconnect structure, thereby ensuring the stability of the basic electrical connection of the interconnect structure.

[0116] The second via layer 300 can be understood with reference to the first via layer 200, and the second via structure 310 can be understood with reference to the first via structure 210. The difference is that the second via structure 310 cannot switch between on and off states; its on and off states are fixed.

[0117] Optionally, such as Figure 11 As shown, the number of first via layers is at least two, and a second via layer 300 is provided between at least two adjacent first via layers 200.

[0118] In the embodiments of this application, by setting the number of first via layers 200 to at least two and providing a second via layer 300 between at least partially adjacent first via layers 200, fixed conductive paths can be flexibly arranged in a multilayer interconnect structure, achieving reconfigurable connections while maintaining stable basic electrical connections, thereby improving the flexibility of interconnect structure layout and application.

[0119] For example, the interconnect structure includes multiple first via layers 200 and at least one second via layer 300. The second via layer 300 may be provided between two adjacent first via layers 200, or the second via layer 300 may be provided in only a portion of two adjacent first via layers 200, and the second via layer 300 may not be provided in the remaining portion.

[0120] Furthermore, the on / off control methods of the first via structures 210 in different first via layers 200 are set independently. For example, the metal layer 100, the first via layer 200, and the second via layer 300 can be arranged in an alternating multi-layer layout, forming a stacked structure as follows: metal layer 100, first via layer 200 using a reduced cross-sectional area fusing method, metal layer 100, second via layer 300, metal layer 100, first via layer 200 using a low melting point material fusing method, and metal layer 100. Similarly, in interconnect structures with more layers, the first via layer 200 and the second via layer 300 can continue to be arranged alternately or as needed between the metal layers 100, thereby realizing a multi-level, flexibly configured interlayer electrical connection layout.

[0121] Optionally, such as Figure 12As shown, the second via layer 300 is disposed on one side of the interconnect structure along the first direction Z, and the first via layer 200 is disposed on the other side of the interconnect structure along the first direction Z.

[0122] In the embodiments of this application, by placing the second via layer 300 on one side of the interconnect structure along the first direction Z and placing the first via layer 200 on the other side of the interconnect structure along the first direction Z, the first via layer 200 and the second via layer 300 are arranged in a partitioned and concentrated manner, thereby simplifying the processing flow of the interconnect structure and facilitating processing, manufacturing and mass production.

[0123] Optionally, such as Figure 13 As shown, the first via layer 200 also includes a dielectric substrate 220; the dielectric substrate 220 has at least one through hole 220a extending through the dielectric substrate 220 along the first direction Z, and each through hole 220a is correspondingly provided with a first via structure 210, and the first via structure 210 is embedded in the through hole 220a.

[0124] In the embodiments of this application, by making the first via layer 200 include a dielectric substrate 220, and forming at least one through hole 220a extending along the first direction Z in the dielectric substrate 220, the first via structures 210 are embedded one-to-one in the through holes 220a, which can position and fix each first via structure 210, while making adjacent first via structures 210 electrically insulated from each other.

[0125] Specifically, the first via layer 200 includes a dielectric substrate 220 and a first via structure 210. The dielectric substrate 220 is the main supporting structure of the first via layer 200, mainly serving as insulation and load-bearing. The dielectric substrate 220 has through holes 220a, which penetrate the dielectric substrate 220 along the first direction Z. There is at least one through hole 220a, used to accommodate the first via structure 210.

[0126] Each through hole 220a is provided in a one-to-one correspondence with a first via structure 210. The first via structure 210 is embedded in the corresponding through hole 220a and extends along the first direction Z to realize the electrical connection between the metal wires 110 on both sides.

[0127] The dielectric substrate 220 can be made of one of silicon dioxide, silicon nitride, or epoxy resin-based dielectric materials; the cross-sectional shape of the through hole 220a can be circular, elliptical, or square, etc.; and the first via structure 210 can be formed by filling the through hole 220a with conductive materials such as copper, aluminum, or doped polycrystalline silicon.

[0128] The structure of the metal layer 100 and the second via layer 300 is similar to that of the first via layer 200. The metal layer 100 and the second via layer 300 can be understood with reference to the first via layer 200, and will not be described again here.

[0129] This application also provides an integrated circuit, which includes the interconnect structure described in the above embodiments.

[0130] In embodiments of this application, the integrated circuit includes interconnect structures, such as... Figure 1 and Figure 2 As shown, in an integrated circuit, a metal layer 100 is provided on at least one side of the first via layer 200 along the first direction Z, thereby enabling connections within the same metal layer 100 using metal lines 110 embedded within the metal layer 100, and connecting the corresponding metal lines 110 using a first via structure 210 embedded within the first via layer 200 and extending along the first direction Z. Based on this, the on / off state of the first via structure 210 can be switched, allowing flexible control of the electrical connection of the metal lines 110; furthermore, the adjustment of the interconnection structure connection relationship can be achieved simply by switching the on / off state of the first via structure 210, without changing the physical layout of the interconnection structure. Therefore, the circuit connection relationship of the interconnection structure can be adjusted without re-fabrication and fabrication of new masks, reducing the cost of the interconnection structure.

[0131] The integrated circuit also includes a device layer and a contact (CT) layer; the device layer is located on one side of the metal layer 100 along the first direction Z, and the contact layer is located between the device layer and the metal layer close to the device layer. The contact holes in the contact layer are used to realize the electrical connection between the components in the device layer and the metal line 110; through the device layer, the contact layer, the metal layer 100 and the first via layer 200, the complete circuit signal conduction inside the integrated circuit is realized.

[0132] The integrated circuit described in this application is applicable to large-model-fixed integrated circuit applications. Specifically, a large-model-fixed integrated circuit refers to an integrated circuit in which the network structure and weight parameters of a large model, such as a large language model or neural network model, are directly embedded in the internal interconnects of the integrated circuit. This type of integrated circuit allows weight multiplication operations to no longer rely on software scheduling, but rather to directly implement model calculation functions based on the inherent hardware interconnects. In practical applications, in partially hard-wired large-model-fixed integrated circuits manufactured using integrated circuit technology, the entire large model is not fully hardware-fixed; only the circuit modules corresponding to weight multiplication operations are set as fixed hardware interconnects, while other computational stages still rely on software or algorithms.

[0133] Specifically, large-model solidified integrated circuits typically embed the model weights directly within the integrated circuit. Because large models are frequently iterated and updated, the weight configuration within the integrated circuit also needs to be modified synchronously; however, in related technologies, modifying the weights requires changing the interconnect relationships of the metal layers, necessitating re-fabrication to create new interconnect structures.

[0134] In specific embodiments, the large-model solid-state integrated circuit of this application can realize the following two applications.

[0135] An application is provided for monolithic large-scale solid-state integrated circuits. Using the integrated circuit of this application, a general-purpose pre-fabricated integrated circuit can be pre-fabricated, and subsequent weight configuration is completed by switching the on / off state of the first via structure 210. Specifically, the first via structure 210 employing a reduced cross-sectional area fusing method or a low-melting-point material fusing method can achieve one-time weight configuration, allowing replacement of the pre-fabricated integrated circuit when updating the large model; the first via structure 210 employing a resistance-state switching method can achieve multiple interconnect reconstructions, enabling direct reconfiguration of weights on the original integrated circuit.

[0136] Another application is for modular, large-scale solid-state integrated circuits. In the integrated circuit solution of this application, only one type of general-purpose prefabricated sub-integrated circuit needs to be manufactured. By reconstructing the on / off state of the first via structure 210 on-chip, it can be configured as a sub-integrated circuit with different weights, thereby reducing the number of photomasks and the cost of repeated tape-out.

[0137] Therefore, the integrated circuit of this application can adjust the interconnection relationship of the metal layer by changing the electrical conduction characteristics of the first via structure 210. After the integrated circuit is fabricated, the weights of the solidified model can be directly modified on the chip. Only the weights of the pre-fabricated integrated circuit need to be reconstructed before it can be put into use, without the need for re-fabrication, thereby effectively saving R&D funds and production cycle.

[0138] Furthermore, the integrated circuit of this application is also applicable to traditional application-specific integrated circuits (ASICs) and their post-tape-out engineering change instructions. The implementation principles of the above two types of scenarios are similar to those of large-scale solid-state integrated circuits. The specific implementation process can be referred to the corresponding description above, and will not be repeated here.

[0139] This application also provides an electrical device, which includes the integrated circuit described in the above embodiments.

[0140] In embodiments of this application, the electrical equipment includes an interconnection structure, such as... Figure 1 and Figure 2As shown, in an integrated circuit, a metal layer 100 is provided on at least one side of the first via layer 200 along the first direction Z, thereby enabling connections within the same metal layer 100 using metal lines 110 embedded within the metal layer 100, and connecting the corresponding metal lines 110 using a first via structure 210 embedded within the first via layer 200 and extending along the first direction Z. Based on this, the on / off state of the first via structure 210 can be switched, allowing flexible control of the electrical connection of the metal lines 110; furthermore, the adjustment of the interconnection structure connection relationship can be achieved simply by switching the on / off state of the first via structure 210, without changing the physical layout of the interconnection structure. Therefore, the circuit connection relationship of the interconnection structure can be adjusted without re-fabrication and fabrication of new masks, reducing the cost of the interconnection structure.

[0141] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0142] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. An interconnection structure, characterized in that, The interconnect structure includes: a metal layer (100) and a first via layer (200); The thickness direction of the first via layer (200) is the first direction (Z), and the metal layer (100) is provided on at least one side of the first via layer (200) along the first direction (Z). The metal layer (100) includes at least one metal wire (110) embedded in the metal layer (100), and the first via layer (200) includes at least one first via structure (210) embedded in the first via layer (200); each first via structure (210) extends along the first direction (Z), and at least one end of each first via structure (210) along the first direction (Z) is electrically connected to one of the metal wires (110) on the corresponding side; The first via structure (210) is configured to switch on / off states.

2. The interconnection structure according to claim 1, characterized in that, The first via structure (210) is configured to be fused so that the first via structure (210) can switch from a conducting state to a blocking state.

3. The interconnection structure according to claim 2, characterized in that, The first via structure (210) is configured to melt under an electrical signal of a preset power.

4. The interconnection structure according to claim 3, characterized in that, The first via structure (210) is cylindrical in shape; The extension direction of each of the metal wires (110) is perpendicular to the first direction (Z), and the cross-sectional area of ​​the first via structure (210) perpendicular to the first direction (Z) is smaller than the cross-sectional area of ​​the metal wire (110) perpendicular to its own extension direction.

5. The interconnection structure according to claim 4, characterized in that, The power value of the electrical signal is positively correlated with the cross-sectional area of ​​the first via structure (210) perpendicular to the first direction (Z).

6. The interconnection structure according to claim 3, characterized in that, The first via structure (210) includes a fuse portion (211) and a connecting portion (212). The fuse (211) is provided with the connecting part (212) on both sides of the first direction (Z), and the connecting part (212) is electrically connected to the fuse (211) and the metal wire (110) at both ends of the first direction (Z). The extension direction of each of the metal wires (110) is perpendicular to the first direction (Z). The cross-sectional area of ​​the fused portion (211) perpendicular to the first direction (Z) is smaller than the cross-sectional area of ​​the metal wire (110) perpendicular to its own extension direction. The cross-sectional area of ​​the fused portion (211) perpendicular to the first direction (Z) is smaller than the cross-sectional area of ​​the connecting portion (212) perpendicular to the first direction (Z).

7. The interconnection structure according to claim 6, characterized in that, The power value of the electrical signal is positively correlated with the cross-sectional area of ​​the fuse (211) perpendicular to the first direction (Z).

8. The interconnection structure according to any one of claims 3-7, characterized in that, The material of the first via structure (210) is the same as that of the metal wire (110).

9. The interconnection structure according to claim 3, characterized in that, The melting point of the material of the first via structure (210) is lower than that of the material of the metal wire (110).

10. The interconnection structure according to claim 9, characterized in that, The power value of the electrical signal is positively correlated with the melting point of the material of the first via structure (210).

11. The interconnection structure according to claim 1, characterized in that, The first via structure (210) has a first resistance state and a second resistance state, the resistance value of the first resistance state is less than the resistance value of the second resistance state; in the first resistance state, the first via structure (210) is in a conductive state; In the second resistive state, the first via structure (210) is in a blocked state; The first via structure (210) is configured to switch between the first resistive state and the second resistive state.

12. The interconnection structure according to claim 11, characterized in that, The first via structure (210) is configured to switch between the first resistive state and the second resistive state according to the polarity of the electrical signal.

13. The interconnection structure according to claim 12, characterized in that, The material of the first via structure (210) is a resistive switching material; The polarity of the electrical signal is either a first polarity or a second polarity, wherein the second polarity is opposite to the first polarity; Under the first polarity, the first via structure (210) has the first resistance state; under the second polarity, the first via structure (210) has the second resistance state.

14. The interconnection structure according to claim 1, characterized in that, The number of the first via layer (200) is at least two, and the on / off control methods of the first via structure (210) in different first via layers (200) are set independently to each other; The on / off control mode of the first via structure (210) in each of the first via layers (200) is one of the following: melting and resistance switching.

15. The interconnection structure according to claim 1, characterized in that, The interconnect structure also includes a second via layer (300). The second via layer (300) has the metal layer (100) provided on at least one side along the first direction (Z). The second via layer (300) includes at least one second via structure (310) embedded in the second via layer (300). Each second via structure (310) extends along the first direction (Z). Each second via structure (310) is electrically connected to the metal wire (110) on the corresponding side along at least one side of the first direction (Z). The on / off state of the second via structure (310) is fixed.

16. The interconnection structure according to claim 15, characterized in that, The number of the first via layers (200) is at least two, and a second via layer (300) is provided between at least two adjacent first via layers (200).

17. The interconnection structure according to claim 15, characterized in that, The second via layer (300) is disposed on one side of the interconnect structure along the first direction (Z), and the first via layer (200) is disposed on the other side of the interconnect structure along the first direction (Z).

18. The interconnection structure according to claim 1, characterized in that, The first via layer (200) further includes a dielectric substrate (220); The dielectric substrate (220) has at least one through hole (220a) extending through the dielectric substrate (220) along the first direction (Z). Each through hole (220a) is correspondingly provided with a first via structure (210), and the first via structure (210) is embedded in the through hole (220a).

19. An integrated circuit, characterized in that, Including the interconnect structure as described in any one of claims 1-18.

20. An electrical appliance, characterized in that, Including the integrated circuit as described in claim 19.

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