Semiconductor devices

Abstract

This invention discloses a semiconductor device comprising: a molding compound; a substrate; and a driver-side pin frame. A longitudinal centerline is defined as the longitudinal centerline of the molding compound. Low-side driver chips and high-side driver chips are spaced apart on the side of the longitudinal centerline facing a first boundary. Jumper pads are electrically connected to the high-side driver chips and the high-side power chips, respectively. A support portion extends longitudinally, with one end connected to the jumper pad portion and the other end extending to a third boundary. This allows the high-side and low-side driver chips to utilize the space on the side of the longitudinal centerline facing the first boundary as much as possible, thereby enabling the high-side jumper pins to utilize the space on the side of the longitudinal centerline facing the second boundary without excessively increasing the lateral dimension of the driver-side pin frame. Furthermore, the extension of the support portion to the third boundary also improves the electrical safety of the semiconductor device.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a semiconductor device. Background Technology

[0002] Electronic control boards for devices such as air conditioners and washing machines can incorporate semiconductor devices like smart power blocks. In existing smart power modules, the signal connection between the IC driver chip and the IGBT power chip requires bonding via electrical connection wires. When there is a significant height difference between the solder joints on the IC driver chip and the IGBT power chip, the arc length of the electrical connection wire between them will be large. This not only causes wire breakage during the molding process due to the flow of molding compound, leading to internal short circuits in the smart power block, but also causes arc deformation and solder joint breakage due to vibrations during subsequent transportation.

[0003] In addition, in some semiconductor devices, jumper pins are used to electrically connect the IC driver chip and the IGBT power chip. However, the use of jumper pins will increase the size of the pin frame in the horizontal or vertical direction, which is not conducive to the miniaturization of semiconductor devices. Summary of the Invention

[0004] The present invention aims to at least solve one of the technical problems existing in the prior art. To this end, one object of the present invention is to provide a semiconductor device that not only makes the electrical connection between the power chip and the driver chip more stable, but also keeps the semiconductor device miniaturized.

[0005] According to a semiconductor device of the present invention, the semiconductor device includes: a molding compound having a lateral direction, a longitudinal direction, and a vertical direction, the lateral direction, the longitudinal direction, and the vertical direction being perpendicular to each other; a substrate at least partially disposed within the molding compound, the substrate having low-side power pads and high-side power pads spaced apart in the lateral direction, a low-side power chip disposed on the low-side power pads, and a high-side power chip disposed on the high-side power pads, wherein the two lateral boundaries of the molding compound are defined as a first boundary and a second boundary, respectively, and in the lateral direction, the low-side power chip is closer to the first boundary, and the high-side power chip... The chip is closer to the second boundary; a drive-side pin frame, which is at least partially disposed within the molding compound and spaced apart on the side of the substrate longitudinally away from the power-side pin, is provided with a drive-side ground pin, and a low-side drive pad and a high-side drive pad are provided on the drive-side ground pin, which are interconnected. A low-side drive chip is disposed on the low-side drive pad, and a high-side drive chip is disposed on the high-side drive pad. The boundary of the low-side drive chip longitudinally toward the substrate is defined as the low-side drive boundary, and the boundary of the high-side drive chip longitudinally away from the substrate is defined as the high-side drive chip. The boundary is the high-side driving boundary, and the low-side driving boundaries are spaced apart on the side of the high-side driving boundary that faces away from the substrate along the longitudinal direction. The orthographic projection of the low-side driving chip in the lateral direction is defined as the low-side driving chip projection, and the orthographic projection of the high-side driving chip in the lateral direction is defined as the high-side driving chip projection. The low-side driving chip projections are spaced apart on the side of the high-side driving chip projection that faces away from the substrate along the longitudinal direction. The centerline extending longitudinally of the molding compound is defined as the longitudinal centerline. Both the low-side driving chip and the high-side driving chip are spaced apart on the side of the longitudinal centerline facing the first boundary. The low-side power chip is electrically connected, and the driver-side pin frame also includes a high-side jumper pin. The high-side jumper pin is at least partially located on the side of the longitudinal centerline facing the second boundary and includes a jumper pad portion and a support portion. The jumper pad portion is electrically connected to the high-side driver chip and the high-side power chip, respectively. The two longitudinal boundaries of the molding compound are set as the third boundary and the fourth boundary, respectively. In the longitudinal direction, the driver-side pin frame is closer to the third boundary, and the substrate is closer to the fourth boundary. The support portion extends in the longitudinal direction and one end is connected to the jumper pad portion, and the other end extends to the third boundary.

[0006] The specific advantages or beneficial effects of the above scheme are as follows: While ensuring a stable electrical connection between the high-side jumper pins and the high-side power chip and driver chip, the high-side and low-side driver chips utilize the space along the vertical centerline towards the first boundary as much as possible, thus freeing up the space required for the high-side jumper pins. This allows the high-side jumper pins to utilize the space along the vertical centerline towards the second boundary without excessively increasing the lateral dimension of the driver-side pin frame. Furthermore, the support extends to the third boundary, so the vertical dimension of the driver-side pin frame is not increased due to the high-side jumper pins. While ensuring stable high-side jumper pin placement and reliable jumper electrical connection, the structure of the driver-side pin frame can be made more compact, optimizing the structural layout of the semiconductor device. In addition, this also improves the electrical safety of the semiconductor device.

[0007] In some embodiments of the present invention, the driver-side pin frame further includes a high-side driver floating power supply ground pin and a high-side driver floating power supply voltage pin. The high-side power chip includes an emitter pad and a gate pad. The high-side jumper pin is electrically connected to the gate pad and the high-side driver chip, respectively. The high-side driver floating power supply ground pin is electrically connected to the emitter pad and the high-side driver chip, respectively. A bootstrap chip is disposed on the high-side driver floating power supply voltage pin, and the bootstrap chip is electrically connected to the high-side driver chip. There are three high-side power chips, namely a first high-side power chip, a second high-side power chip, and a third high-side power chip. The high-side jumper pin... The device has three high-side jumper pins: a first high-side jumper pin, a second high-side jumper pin, and a third high-side jumper pin. The first high-side jumper pin is electrically connected to the gate pad of the first high-side power chip and the high-side driver chip, respectively. The second high-side jumper pin is electrically connected to the gate pad of the second high-side power chip and the high-side driver chip, respectively. The third high-side jumper pin is electrically connected to the gate pad of the third high-side power chip and the high-side driver chip, respectively. The device also has three high-side driver floating power supply / ground pins: a first high-side driver floating power supply / ground pin, a second high-side driver floating power supply / ground pin, and a third high-side driver floating power supply / ground pin. The high-side drive floating power supply voltage pins are all three, and are respectively a first high-side drive floating power supply voltage pin, a second high-side drive floating power supply voltage pin, and a third high-side drive floating power supply voltage pin spaced laterally. At least a portion of the first high-side drive floating power supply ground pin is spaced laterally between the first high-side drive floating power supply voltage pin and the second high-side drive floating power supply voltage pin. At least a portion of the second high-side drive floating power supply ground pin is spaced laterally between the second high-side drive floating power supply voltage pin and the third high-side drive floating power supply voltage pin. At least a portion of the third high-side drive floating power supply ground pin is spaced laterally between the first high-side drive floating power supply voltage pin and the second high-side drive floating power supply voltage pin. The support portion of the first high-side jumper pin is laterally spaced between the first high-side drive floating power supply ground pin and the second high-side drive floating power supply voltage pin; the support portion of the second high-side jumper pin is laterally spaced between the second high-side drive floating power supply ground pin and the third high-side drive floating power supply voltage pin; and the support portion of the third high-side jumper pin is laterally spaced on the side of the third high-side drive floating power supply ground pin that is opposite to the third high-side drive floating power supply voltage pin.

[0008] In some examples of the present invention, the first high-side drive floating power supply ground pin includes a first pin segment, a second pin segment, and a third pin segment. The first pin segment and the second pin segment both extend longitudinally. The second pin segment is connected to one end of the first pin segment longitudinally toward the substrate. One end of the third pin segment is connected between the first pin segment and the second pin segment and extends laterally toward the low-side drive pad. The first high-side drive floating power supply voltage pins are spaced apart on the side of the first pin segment laterally toward the first boundary, and spaced apart on the side of the third pin segment longitudinally away from the substrate. The second pin segments are spaced apart on the side of the high-side drive pad laterally toward the second boundary. The second pin segment is connected to the emitter of the first high-side power pad. The pads are electrically connected, and the third pin segment is electrically connected to the high-side driver chip. The support portion and the jumper pad portion of the first high-side jumper pin are respectively defined as a first support portion and a first jumper pad portion. The first support portion is spaced apart on the side of the first pin segment and the second pin segment facing the second boundary laterally. The first jumper pad portion is spaced apart on the side of the first high-side driver floating power supply ground pin facing the substrate laterally. The high-side driver pad includes a first high-side pad portion and a second high-side pad portion. The second high-side pad portion is disposed on the side of the first high-side pad portion facing the second boundary laterally. The first high-side pad portion protrudes at least partially in the longitudinal direction relative to the side of the second high-side pad portion facing the substrate to form a first clearance groove. The first jumper pad portion extends at least partially into the first clearance groove.

[0009] In some examples of the present invention, the second high-side drive floating power supply ground pin includes a fourth pin segment, a fifth pin segment, and a sixth pin segment. The fourth pin segment extends longitudinally and is laterally spaced on the side of the second high-side drive floating power supply voltage pin opposite to the first high-side drive floating power supply voltage pin. The fifth pin segment extends laterally, with one end connected to the end of the fourth pin segment longitudinally adjacent to the substrate. The fifth pin segment is spaced on the side of the second high-side drive floating power supply voltage pin longitudinally facing the substrate. The sixth pin segment is connected to the other end of the fifth pin segment and extends longitudinally towards the substrate. The sixth pin segment is spaced on the side of the first support portion laterally opposite to the high-side drive pad. The end of the sixth pin segment longitudinally adjacent to the substrate is electrically connected to the emitter pad of the second high-side power chip, and the end of the sixth pin segment longitudinally away from the substrate is electrically connected to the high-side drive chip. A second high-side jumper pin is configured. The support portion and the jumper pad portion are respectively the second support portion and the second jumper pad portion. The second jumper pad portion includes a first jumper pad pin segment, a second jumper pad pin segment, and a third jumper pad pin segment. The first jumper pad pin segment extends laterally and one end is connected to the second support portion. The first jumper pad pin segment is spaced apart from the fifth pin segment on the side facing the substrate longitudinally. The second jumper pad pin segment is connected to the other end of the first jumper pad pin segment and extends longitudinally towards the substrate. The second jumper pad pin segment is spaced apart from the sixth pin segment on the side facing away from the high-side drive pad laterally. The third jumper pad pin segment is spaced apart from the sixth pin segment on the side facing the substrate longitudinally. One end of the second jumper pad pin segment facing the substrate longitudinally is electrically connected to the gate pad of the second high-side power pad. One end of the third jumper pad pin segment moving laterally away from the second jumper pad pin segment is electrically connected to the high-side drive chip.

[0010] In some examples of the present invention, the first jumper pad portion includes a fourth jumper pad pin segment and a fifth jumper pad pin segment. The fourth jumper pad pin segment is connected between the fifth jumper pad pin segment and the first support portion. At least a portion of the fifth jumper pad pin segment protrudes longitudinally toward the substrate relative to the fourth jumper pad pin segment to form the second clearance groove. The gate pad of the first high-side power chip is electrically connected to the fifth jumper pad pin segment, and the high-side driver chip is electrically connected to the fifth jumper pad pin segment.

[0011] In some examples of the present invention, the third high-side drive floating power supply ground pin includes a seventh pin segment, an eighth pin segment, and a ninth pin segment. The seventh pin segment extends longitudinally and is laterally spaced on the side of the third high-side drive floating power supply voltage pin opposite to the second high-side drive floating power supply voltage pin. The ninth pin segment extends laterally and is laterally spaced on the side of the seventh pin segment facing the substrate and longitudinally spaced on the side of the seventh pin segment facing the first boundary. The eighth pin segment connects the seventh pin segment and the ninth pin segment and is electrically connected to the emitter pad of the third high-side power chip. The end of the ninth pin segment laterally away from the eighth pin segment is electrically connected to the high-side drive chip. The third jumper pad portion includes a sixth jumper pad pin segment, the seventh jumper pad pin segment, and an eighth jumper pad pin segment. The seventh jumper pad pin segment extends laterally and is laterally spaced... The seventh jumper pad pin segment is positioned on the side of the third support portion facing the substrate. It is laterally spaced on the side of the third support portion facing the first boundary. The seventh jumper pad pin segment is also spaced on the side of the ninth pin segment facing the substrate in the longitudinal direction. The sixth jumper pad pin segment connects the third support portion and the seventh jumper pad pin segment. At least partially, one end of the seventh jumper pad pin segment laterally away from the sixth jumper pad pin segment extends into the second clearance groove. The seventh jumper pad pin segment is longitudinally spaced on the side of the third jumper pad pin segment facing the substrate. The eighth jumper pad pin segment is connected to the end of the seventh jumper pad pin segment laterally away from the sixth jumper pad pin segment. The eighth jumper pad pin segment extends longitudinally away from the substrate. The eighth jumper pad pin segment is located in the second clearance groove and is laterally spaced between the first high-side pad portion and the third jumper pad pin segment.

[0012] In some embodiments of the present invention, the drive-side pin frame further includes high-side drive power pins, which are laterally spaced between the low-side drive pad and the first high-side drive floating power supply voltage pin, and longitudinally spaced on the side of the high-side drive pad facing away from the substrate. The high-side drive power pins include a first power pin segment, a second power pin segment, and a third power pin segment. The first power pin segment and the third power pin segment both extend longitudinally. Compared to the third power pin segment, the first power pin segment is laterally closer to the low-side drive pad. The second power pin segment extends laterally and connects to the first power pin segment and the third power pin segment. Between the ends of the source pin segment adjacent to the high-side drive pad along the longitudinal direction, the first power pin segment extends to the third boundary at one end of the first power pin segment away from the high-side drive pad in the longitudinal direction, and the third power pin segment is spaced apart from the third boundary at one end of the third power pin segment away from the high-side drive pad in the longitudinal direction; a first bootstrap chip, a second bootstrap chip, and a third bootstrap chip are respectively disposed on the first high-side drive floating power ground pin, the second high-side drive floating power ground pin, and the third high-side drive floating power ground pin, the third bootstrap chip and the second bootstrap chip are electrically connected, the second bootstrap chip and the first bootstrap chip are electrically connected, the first bootstrap chip and the third power pin segment are electrically connected, and the high-side drive chip is electrically connected to the second power pin segment.

[0013] In some examples of the present invention, the first power supply pin segment, the second power supply pin segment, and the third power supply pin segment form a third clearance groove. The high-side signal input pin is disposed in the third clearance groove and extends longitudinally. The high-side signal input pin is electrically connected to the high-side driver chip. The high-side signal input pin is laterally spaced between the low-side driver pad and the first high-side driver floating power supply voltage pin. The high-side signal input pin is also spaced on the side of the second power supply pin segment that is longitudinally away from the high-side driver pad. There are three high-side signal input pins, which are laterally spaced and each is electrically connected to the high-side driver chip and the low-side driver chip, respectively.

[0014] In some embodiments of the present invention, the low-side drive pad is at least partially convex relative to the high-side drive pad in the longitudinal direction toward the side away from the substrate. The drive-side ground pin includes a first support pin extending laterally. One end of the first support pin is connected to the high-side drive pad in the lateral direction toward the first boundary, and the other end of the first support pin extends to the first boundary. The first support pin is located at one end of the high-side drive pad in the longitudinal direction adjacent to the substrate. The first support pins are spaced apart on the side of the low-side drive pad in the longitudinal direction toward the substrate. The first support pin, the low-side drive pad, and the... The high-side drive pads form a fourth clearance groove; the drive-side pin frame also includes low-side jumper pins, which are electrically connected to the low-side power chip and the low-side drive chip respectively. The low-side jumper pins are disposed in the fourth clearance groove and are longitudinally spaced from the low-side drive pads and the first support pin respectively. The low-side jumper pins extend laterally, with one end extending to the third boundary and the other end being laterally spaced from the high-side drive pads. There are three low-side jumper pins, which are longitudinally spaced from each other in the second clearance groove. The three low-side jumper pins are electrically connected to the three low-side power chips respectively.

[0015] In some examples of the present invention, the drive-side ground pin further includes a second support pin, one end of which is connected to the low-side drive pad laterally toward the first boundary, and the other end of which extends to the third boundary; and / or the drive-side ground pin further includes a third support pin, one end of which is connected to the low-side drive pad laterally toward the third boundary, and the other end of which extends to the third boundary.

[0016] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0017] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the driver-side pin frame according to an embodiment of the present invention; Figure 3 This is a partial schematic diagram of the driver-side pin frame according to an embodiment of the present invention; Figure 4This is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.

[0018] Figure label: 100. Semiconductor devices; 10. Molded body; 11. First boundary; 12. Second boundary; 13. Third boundary; 14. Fourth boundary; 15. Longitudinal centerline; 20. Substrate; 21. High-side power pad; 211. High-side power chip; 2111. First high-side power chip; 2112. Second high-side power chip; 2113. Third high-side power chip; 22. Low-side power pad; 221. Low-side power chip; 2211. First low-side power chip; 2212. Second low-side power chip; 2213. Third low-side power chip; 30. Driver-side pin frame; 31. Driver-side ground pin; 32. High-side driver pad; 321. High-side driver chip; 322. First high-side pad portion; 323. Second high-side pad portion; 324. First clearance slot; 3211. Gate pad; 3212. Emitter pad; 33. Low-side driver pad; 331. Low-side driver chip; 34. First support pin; 35. Second support pin; 36. Third support pin; 37. Fourth clearance slot; 38. Low-side jumper pin; 40. High-side jumper pin; 41. First high-side jumper pin; 411. First support portion; 412. First jumper pad portion; 4121. Fourth jumper pad pin segment; 4122. Fifth jumper pad pin segment; 4123. Second clearance groove; 42. Second high-side jumper pin; 421. Second support portion; 422. Second jumper pad portion; 4221. First jumper pad pin segment; 4222. Second jumper pad pin segment; 4223. Third jumper pad pin segment; 43. Third high-side jumper pin; 431. Third support portion; 432. Third jumper pad portion; 4321. Sixth jumper pad pin segment; 4322. Seventh jumper pad pin segment; 4323. Eighth jumper pad pin segment; 50. First high-side drive floating power supply ground pin; 501. First pin segment; 502. Second pin segment; 503. Third pin segment; 51. Second high-side drive floating power supply ground pin; 511. Fourth pin segment; 512. Fifth pin segment; 513. Sixth pin segment; 52. Third high-side drive floating power supply ground pin; 521. Seventh pin segment; 522. Eighth pin segment; 523. Ninth pin segment; 60. First high-side drive floating power supply voltage pin; 601. First bootstrap chip; 61. Second high-side drive floating power supply voltage pin; 611. Second bootstrap chip; 62. Third high-side drive floating power supply voltage pin; 621. Third bootstrap chip; 70. High-side drive power supply pin; 71. First power supply pin segment; 72. Second power supply pin segment; 73. Third power supply pin segment; 74. Third clearance slot; 75. High-side signal input pin. Detailed Implementation

[0019] The following is for reference. Figures 1-4 A semiconductor device 100 according to an embodiment of the present invention is described. The semiconductor device 100 can be applied to a circuit board assembly, the circuit board assembly can be applied to an electrical control box, and the electrical control box can be applied to an electrical device.

[0020] Combination Figures 1-4 As shown, the semiconductor device 100 according to the present invention may mainly include: a molding compound 10, a substrate 20, and a drive-side pin frame 30. The substrate 20 is at least partially disposed within the molding compound 10. The substrate 20 may be completely encapsulated by the molding compound 10, or it may be partially encapsulated by the molding compound 10 and partially exposed on the surface of the molding compound 10. The drive-side pin frame 30 is at least partially disposed within the molding compound 10 and partially extends out of the molding compound 10 for electrical connection with external components. The molding compound 10 can protect the substrate 20 and the drive-side pin frame 30 within the semiconductor device 100 to ensure their stable placement and provide electrical insulation from the outside, thereby guaranteeing the structural reliability of the semiconductor device 100.

[0021] It should be noted that the pins of the drive-side pin frame 30 are spaced apart to ensure electrical isolation between the pins of the drive-side pin frame 30, and the lengths of the pins of the drive-side pin frame 30 extending out of the plastic package 10 are not consistent in the longitudinal direction, which will not be elaborated here.

[0022] It should be noted that, in one embodiment of the present invention, a small portion of the drive-side pin frame 30 extends longitudinally and is connected to the substrate 20, while the majority of the drive-side pin frame 30 is longitudinally spaced apart from the substrate 20.

[0023] In another embodiment of the present invention, a small portion of the substrate 20 extends longitudinally into the drive-side pin frame 30, while the majority of the substrate 20 is longitudinally spaced apart from the drive-side pin frame 30.

[0024] In another embodiment of the present invention, the substrate 20 and the drive-side pin frame 30 are completely separated from each other in the longitudinal direction.

[0025] It should be noted that the encapsulated body 10 has a horizontal, vertical and a longitudinal direction, and the horizontal, vertical and a longitudinal direction are perpendicular to each other.

[0026] Furthermore, the substrate 20 includes power pads on which power chips are disposed. The drive-side pin frame 30 has drive-side ground pins 31 on which drive-side ground pins 31 are disposed. The drive-side ground pins 31 have drive pads on which drive chips are disposed. The signal connection between the power chip and the drive chip needs to be soldered and fixed to the corresponding pads on the power chip and the drive chip respectively through electrical connection lines. Due to the structural design of the semiconductor device 100, the drive-side pin frame 30 needs to be vertically positioned higher than the substrate 20 so that the drive chip is away from the high-temperature area of ​​the power chip, thereby improving the heat dissipation effect. At the same time, it increases the electrical clearance and creepage distance, reduces the risk of high voltage interference and crosstalk, and improves the stability of drive control and system safety.

[0027] Furthermore, the substrate 20 is provided with low-side power pads 22 and high-side power pads 21 spaced apart in the lateral direction. A low-side power chip 221 is disposed on the low-side power pads 22, and a high-side power chip 211 is disposed on the high-side power pads 21. The two lateral boundaries of the molding compound 10 are defined as a first boundary 11 and a second boundary 12, respectively. Laterally, the low-side power chip 221 is closer to the first boundary 11, and the high-side power chip 211 is closer to the second boundary 12. A drive-side pin frame 30 is at least partially disposed within the molding compound 10 and spaced apart on the longitudinal side of the substrate 20 away from the power-side pins. A drive-side ground pin 31 is disposed on the drive-side pin frame 30. The ground pin 31 is provided with a low-side driving pad 33 and a high-side driving pad 32 that are connected to each other. The low-side driving pad 33 is provided with a low-side driving chip 331, and the high-side driving pad 32 is provided with a high-side driving chip 321. The orthographic projection of the low-side driving chip 331 in the horizontal direction is defined as the low-side driving chip projection, and the orthographic projection of the high-side driving chip 321 in the horizontal direction is defined as the high-side driving chip projection. The low-side driving chip projection is spaced apart on the side of the high-side driving chip projection that is away from the substrate 20 in the longitudinal direction. The centerline of the molding compound 10 extending in the longitudinal direction is defined as the longitudinal centerline 15. The low-side driving chip 331 and the high-side driving chip 321 are both spaced apart on the side of the longitudinal centerline 15 facing the first boundary 11.

[0028] Specifically, when the substrate 20 is provided with a low-side power chip 221 and a high-side power chip 211, and the drive-side pin frame 30 is provided with a high-side drive chip 321 and a low-side drive chip 331, it is necessary to electrically connect the low-side power chip 221 and the low-side drive chip 331, and to electrically connect the high-side power chip 211 and the high-side drive chip 321.

[0029] Furthermore, the driving side ground pin 31 is provided with a low-side driving pad 33 and a high-side driving pad 32 that are connected to each other. The orthographic projection of the low-side driving chip 331 in the horizontal direction is defined as the low-side driving chip projection, and the orthographic projection of the high-side driving chip 321 in the horizontal direction is defined as the high-side driving chip projection. The low-side driving chip projection is spaced apart on the side of the high-side driving chip projection that is away from the substrate 20 in the longitudinal direction. The centerline of the molding compound 10 extending in the longitudinal direction is defined as the longitudinal centerline 15. The low-side driving chip 331 and the high-side driving chip 321 are both spaced apart on the side of the longitudinal centerline 15 facing the first boundary 11.

[0030] With this configuration, the interconnection between the low-side drive pad 33 and the high-side drive pad 32 can make the layout of the drive pads more compact. On this basis, the low-side drive chip 331 and the high-side drive chip 321 are both spaced apart on the side of the longitudinal center line 15 facing the first boundary 11. This allows the low-side drive chip 331 and the high-side drive chip 321 to occupy only the space on the side of the longitudinal center line 15 facing the first boundary 11, thus allowing for extra space on the side of the longitudinal center line 15 facing the second boundary 12.

[0031] Combination Figure 4 As shown, in some embodiments of the present invention, the side of the high-side driving chip 321 that is vertically opposite to the high-side driving pad 32 is designated as the upper side of the high-side driving chip, and the side of the high-side power chip 211 that is vertically opposite to the high-side power pad 21 is designated as the upper side of the high-side power chip. If the two ends of the electrical connection wire are directly soldered to the upper side of the high-side driving chip and the upper side of the high-side power chip respectively, the electrical connection wire will form a curved arc shape. If the height difference between the upper side of the high-side driving chip and the upper side of the high-side power chip is set to d in the vertical direction, when d > 2.3 mm, the arc length of the electrical connection wire will be large. Not only will the vibration during transportation after the electrical connection is completed cause the electrical connection wire to deform and the solder joint of the electrical connection wire to break, but the flow of the molding compound during the molding process will also cause the electrical connection wire to break, thereby causing a short circuit inside the semiconductor device 100.

[0032] Therefore, by providing a high-side jumper pin 40 on the drive-side pin frame 30, with the high-side jumper pin 40 at least partially located on the side of the longitudinal centerline 15 facing the second boundary 12, the high-side jumper pin 40 can fully utilize the available space on the side of the longitudinal centerline 15 facing the second boundary 12, without increasing the lateral space of the drive-side pin frame 30, thus preventing an increase in the lateral space of the molding compound 10, which is beneficial for the miniaturization of the semiconductor device 100. Furthermore, the high-side jumper pin 40 includes a jumper pad portion and a support portion. The jumper pad portion is electrically connected to the high-side driver chip 321 and the high-side power chip 211, respectively. This makes the wire bonding electrical connection between the high-side driver chip 321 and the jumper pad portion more stable and reliable, and also makes the wire bonding electrical connection between the high-side power chip 211 and the jumper pad portion more stable and reliable.

[0033] Furthermore, the two longitudinal boundaries of the molding compound 10 are defined as the third boundary 13 and the fourth boundary 14, respectively. In the longitudinal direction, the drive-side pin frame 30 is closer to the third boundary 13, the substrate 20 is closer to the fourth boundary 14, and the support extends in the longitudinal direction with one end connected to the jumper pad and the other end extending to the third boundary 13.

[0034] In this way, by extending the support from the third boundary 13, the support of the high-side jumper pin 40 will not increase the longitudinal dimension of the drive-side pin frame 30, thus not increasing the longitudinal dimension of the plastic package 10, which can facilitate the miniaturization of the semiconductor device 100.

[0035] Furthermore, it should be noted that the embodiments of the present invention optimize the structural layout of the driver-side pin frame 30 to ensure that the dimensions of the driver-side pin frame 30 in both the horizontal and vertical directions do not increase, thereby achieving miniaturization of the semiconductor device 100, while ensuring the normal and stable setting of the high-side jumper pin 40. The present invention does not reduce the vertical dimension of the substrate 20 when increasing the vertical dimension of the driver-side pin frame 30 in order to ensure the miniaturization of the semiconductor device 100. The embodiments of the present invention can ensure the normal setting and normal operation of the power chip on the substrate 20, and the semiconductor device 100 of the embodiments of the present invention has higher reliability.

[0036] Combination Figure 1 and Figure 2 As shown, in some embodiments of the present invention, the length dimension of the molding compound 10 in the lateral direction is set to L1, and the width dimension of the molding compound 10 in the longitudinal direction is set to L2. L1 and L2 satisfy the following relationships: 35mm < L1 < 40mm, 20mm < L13 < 26mm. By setting the lateral and longitudinal dimensions of the molding compound 10 within a small range, it is possible to ensure the miniaturization of the semiconductor device 10 while ensuring that the molding compound 10 encapsulates at least a portion of the substrate 20, at least a portion of the drive-side pin frame 30, the drive chip, and the power chip.

[0037] Furthermore, the boundary of the low-side driving chip 331 along the longitudinal direction toward the substrate 20 is defined as the low-side driving boundary, and the boundary of the high-side driving chip 321 along the longitudinal direction away from the substrate 20 is defined as the high-side driving boundary. The low-side driving boundary is spaced apart from the high-side driving boundary along the longitudinal direction away from the substrate 20.

[0038] It should be noted that, since the layout of the longitudinal centerline 15 toward the second boundary 12 is relatively compact and the wiring is difficult, setting the low-side driving boundary interval on the side of the high-side driving boundary away from the substrate 20 in the longitudinal direction can make the high-side driving chip 321 closer to the substrate 20 in the longitudinal direction, that is, closer to the high-side power chip 211. This can reduce the wiring difficulty between the high-side driving chip 321 and the high-side power chip 211, and can reduce the difficulty of setting the high-side jumper pin 40. This facilitates the layout of the high-side jumper pin 40, the high-side driving floating power supply ground pin, and the high-side driving floating power supply voltage pin on the side of the longitudinal centerline 15 toward the second boundary 12, and can optimize the structural layout of the semiconductor device 100.

[0039] In addition, there are relatively few pins associated with the low-side driver chip 331. Therefore, even though the low-side driver chip 331 is farther from the substrate 20 than the high-side driver chip 321, a stable electrical connection between the low-side power chip 221 and the low-side driver chip 331 can be achieved with proper pin layout through the low-side jumper pin 38.

[0040] In some embodiments of the present invention, the low-side driving chip 331 is spaced apart from the high-side driving chip 321 on the side that is laterally opposite to the longitudinal centerline 15.

[0041] Therefore, while ensuring a stable electrical connection between the high-side jumper pin 40 and the high-side power chip 211 and the high-side driver chip 321, the high-side driver chip 321 and the low-side driver chip 331 utilize the space on the side of the vertical centerline 15 toward the first boundary 11 as much as possible. This frees up the space required for the high-side jumper pin 40, allowing it to utilize the space on the side of the vertical centerline 15 toward the second boundary 12 without excessively increasing the lateral dimension of the driver-side pin frame 30. Furthermore, the support extends to the third boundary 13, so the vertical dimension of the driver-side pin frame 30 is not increased due to the arrangement of the high-side jumper pin 40. While ensuring the stability of the high-side jumper pin 40 and the reliable electrical connection of the jumper, the structure of the driver-side pin frame 30 can be made more compact, thus optimizing the structural layout of the semiconductor device 100.

[0042] Combination Figures 1-3As shown, the driver-side pin frame 30 also includes a high-side driver floating power supply ground pin and a high-side driver floating power supply voltage pin. The high-side power chip 211 includes an emitter pad 3212 and a gate pad 3211. The high-side jumper pin 40 is electrically connected to the gate pad 3211 and the high-side driver chip 321, respectively. The high-side driver floating power supply ground pin is electrically connected to the emitter pad 3212 and the high-side driver chip 321, respectively. A bootstrap chip is disposed on the high-side driver floating power supply voltage pin, and the bootstrap chip is electrically connected to the high-side driver chip 321. There are three high-side power chips 211, namely the first high-side power chip 2111, the second high-side power chip 2112, and the third high-side power chip 2113. There are three high-side jumper pins 40, namely a first high-side jumper pin 41, a second high-side jumper pin 42, and a third high-side jumper pin 43. The first high-side jumper pin 41 is electrically connected to the gate pad 3211 of the first high-side power chip 2111 and the high-side driver chip 321, respectively. The second high-side jumper pin 42 is electrically connected to the gate pad 3211 of the second high-side power chip 2112 and the high-side driver chip 321, respectively. The third high-side jumper pin 43 is electrically connected to the gate pad 3211 of the third high-side power chip 2113 and the high-side driver chip 321, respectively. There are three high-side driver floating power supply ground pins, namely a first high-side driver floating power supply ground pin 50, a second high-side driver floating power supply ground pin 50, and a third high-side driver floating power supply ground pin 50. Pin 51 and the third high-side drive floating power supply ground pin 52, and three high-side drive floating power supply voltage pins, are respectively a first high-side drive floating power supply voltage pin 60, a second high-side drive floating power supply voltage pin 61, and a third high-side drive floating power supply voltage pin 62 spaced laterally. At least a portion of the first high-side drive floating power supply ground pin 50 is spaced laterally between the first high-side drive floating power supply voltage pin 60 and the second high-side drive floating power supply voltage pin 61. At least a portion of the second high-side drive floating power supply ground pin 51 is spaced laterally between the second high-side drive floating power supply voltage pin 61 and the third high-side drive floating power supply voltage pin 62. The third high-side drive floating power supply ground pin 51... At least a portion of the floating power supply ground pin 52 is laterally spaced on the side of the third high-side drive floating power supply voltage pin 62 away from the second high-side drive floating power supply voltage pin 61; the support portion of the first high-side jumper pin 41 is laterally spaced between the first high-side drive floating power supply ground pin 50 and the second high-side drive floating power supply voltage pin 61; the support portion of the second high-side jumper pin 42 is laterally spaced between the second high-side drive floating power supply ground pin 51 and the third high-side drive floating power supply voltage pin 62; and the support portion of the third high-side jumper pin 43 is laterally spaced on the side of the third high-side drive floating power supply ground pin 52 away from the third high-side drive floating power supply voltage pin 62.

[0043] Specifically, when there are three high-side power chips 211, three high-side jumper pins 40 need to be set accordingly, that is, a first high-side jumper pin 41, a second high-side jumper pin 42, and a third high-side jumper pin 43 need to be set. The support portion of the first high-side jumper pin 41 is horizontally spaced between the first high-side drive floating power supply ground pin 50 and the second high-side drive floating power supply voltage pin 61. The support portion of the second high-side jumper pin 42 is horizontally spaced between the second high-side drive floating power supply ground pin 51 and the third high-side drive floating power supply voltage pin 62. The support portion of the third high-side jumper pin 43 is horizontally spaced on the side of the third high-side drive floating power supply ground pin 52 away from the third high-side drive floating power supply voltage pin 62. This makes the structure between the high-side jumper pins 40, the high-side drive floating power supply ground pin, and the high-side drive floating power supply voltage pin more compact, so that the horizontal dimension of the drive-side pin frame 30 will not increase excessively.

[0044] In the prior art, the end of the high-side jumper pin 40 can extend to the second boundary of the molded body 10 to achieve support with the molded body 10. The drive-side ground pin 31 can also be provided with a support pin extending to the second boundary 12 to achieve support with the molded body 10. The high-side jumper pin 40 is a high-voltage pin. There is a high voltage between two adjacent high-side jumper pins 40 and the support pins of the drive-side ground pin 31 at the second boundary 12. It is necessary to insulate the ends of the three high-side jumper pins 40 and the support pins of the drive-side ground pin 31 extending to the second boundary 12 during the semiconductor device 100 manufacturing process in order to ensure the electrical safety of the molded body 10 at the second boundary 12.

[0045] In this embodiment of the invention, the support portion of the high-side jumper pin 40 extends to the third boundary 13, and the end of the high-side drive floating power supply ground pin itself extends to the third boundary 13. The ends of the three high-side jumper pins 40 extending to the third boundary 13 are respectively arranged in a horizontal direction adjacent to the three high-side drive floating power supply ground pins. This makes the voltage between the high-side jumper pin 40 and the high-side drive floating power supply ground pin at the third boundary 13 smaller, and does not require additional insulation treatment for the ends of the high-side jumper pins 40 extending to the third boundary. This simplifies the processing and production process and steps while ensuring the electrical safety of the semiconductor device 100.

[0046] Furthermore, in this embodiment of the invention, the support portions of the three high-side jumper pins 40 all extend to the third boundary 13, and the drive-side ground pin 31 is not provided with support pins extending to the second boundary 12. This does not increase the vertical dimension of the drive-side pin frame 30, and the space occupied by the drive-side pin frame 30 is small, and the wiring resources are less. It should be noted that if the vertical dimension of the drive-side pin frame 30 is increased, in order to miniaturize the semiconductor device 100, the vertical dimension of the substrate 20 needs to be reduced accordingly.

[0047] Therefore, with this configuration, the longitudinal space saved by the drive-side pin frame 30 can ensure the area of ​​the substrate 20, thereby reducing the thermal resistance of the power chip on the substrate 20 and improving the heat dissipation performance of the power chip on the substrate 20.

[0048] It should be noted that in the prior art, when the support pins of the three high-side jumper pins 40 and the drive-side ground pin 31 all extend to the second boundary 12, the voltage between two adjacent support pins of the three high-side jumper pins 40 and the drive-side ground pin 31 at the second boundary 12 will reach more than 600V. However, in the embodiment of the present invention, the voltage between the end of the support portion of the high-side jumper pin 40 extending to the third boundary 13 and the end of the adjacent high-side drive floating power supply ground pin extending to the third boundary 13 is about 15V.

[0049] Combination Figures 1-3As shown, the first high-side drive floating power supply ground pin 50 includes a first pin segment 501, a second pin segment 502, and a third pin segment 503. The first pin segment 501 and the second pin segment 502 both extend longitudinally. The second pin segment 502 is connected to one end of the first pin segment 501 longitudinally toward the substrate 20. One end of the third pin segment 503 is connected between the first pin segment 501 and the second pin segment 502 and extends laterally toward the low-side drive pad 33. The first high-side drive floating power supply voltage pins 60 are spaced apart on the side of the first pin segment 501 laterally toward the first boundary 11, and spaced apart on the side of the third pin segment 503 longitudinally away from the substrate 20. The second pin segment 502 is spaced apart on the side of the high-side drive pad 32 laterally toward the second boundary 12. The second pin segment 502 is electrically connected to the emitter pad 3212 of the first high-side power pad 21. The third pin segment 503 is electrically connected to the high-side driver chip 321. The support portion and jumper pad portion of the first high-side jumper pin 41 are set as the first support portion 411 and the first jumper pad portion 412, respectively. The first support portion 411 is spaced apart on the side of the first pin segment 501 and the second pin segment 502 facing the second boundary 12 laterally. The first jumper pad portion 412 is spaced apart on the side of the first high-side driver floating power supply ground pin 50 facing the substrate 20 laterally. The high-side driver pad 32 includes a first high-side pad portion 322 and a second high-side pad portion 323. The second high-side pad portion 323 is disposed on the side of the first high-side pad portion 322 facing the second boundary 12 laterally. The first high-side pad portion 322 protrudes at least partially in the longitudinal direction relative to the side of the second high-side pad portion 323 facing the substrate 20 to form a first clearance groove 324. The first jumper pad portion 412 extends at least partially into the first clearance groove 324.

[0050] Specifically, the first support portion 411 is spaced apart on the side of the first pin segment 501 and the second pin segment 502 facing the second boundary 12 laterally. The first jumper pad portion 412 is spaced apart on the side of the first high-side drive floating power supply ground pin 50 facing the substrate 20 laterally. The first high-side pad portion 322 protrudes at least partially in the longitudinal direction relative to the side of the second high-side pad portion 323 facing the substrate 20 to form a first clearance groove 324. The first jumper pad portion 412 extends at least partially into the first clearance groove 324. With this arrangement, the structure between the first high-side jumper pin 41, the first high-side drive floating power supply ground pin 50, and the high-side drive pad 32 is more compact, provided that the first high-side power chip 2111 and the high-side drive chip 321 are stably wired to the first high-side jumper pin 41.

[0051] Combination Figures 1-3As shown, the second high-side drive floating power supply ground pin 51 includes a fourth pin segment 511, a fifth pin segment 512, and a sixth pin segment 513. The fourth pin segment 511 extends vertically and is laterally spaced on the side of the second high-side drive floating power supply voltage pin 61 away from the first high-side drive floating power supply voltage pin 60. The fifth pin segment 512 extends laterally, and one end of the fifth pin segment 512 is connected to the end of the fourth pin segment 511 that is vertically adjacent to the substrate 20. The fifth pin segment 512 is spaced along the second high-side drive floating power supply voltage pin 61. On the side facing the substrate 20 longitudinally, the sixth pin segment 513 is connected to the other end of the fifth pin segment 512 and extends longitudinally toward the substrate 20. The sixth pin segment 513 is spaced apart on the side of the first support portion 411 that is laterally away from the high-side drive pad 32. The end of the sixth pin segment 513 that is longitudinally adjacent to the substrate 20 is electrically connected to the emitter pad 3212 of the second high-side power chip 2112, and the end of the sixth pin segment 513 that is longitudinally away from the substrate 20 is electrically connected to the high-side drive chip 321. The support portion and jumper pad portion of the second high-side jumper pin 42 are configured. The second support portion 421 and the second jumper pad portion 422 are respectively designated as the second support portion 421 and the second jumper pad portion 422. The second jumper pad portion 422 includes a first jumper pad pin segment 4221, a second jumper pad pin segment 4222, and a third jumper pad pin segment 4223. The first jumper pad pin segment 4221 extends laterally and one end is connected to the second support portion 421. The first jumper pad pin segment 4221 is spaced apart from the fifth pin segment 512 on the side facing the substrate 20 longitudinally. The second jumper pad pin segment 4222 is connected to the other end of the first jumper pad pin segment 4221 and extends longitudinally towards the substrate 20. Extending from one side of the substrate 20, the second jumper pad pin segment 4222 is spaced apart from the side of the sixth pin segment 513 laterally away from the high-side drive pad 32, and the third jumper pad pin segment 4223 is spaced apart from the side of the sixth pin segment 513 longitudinally facing the substrate 20. The end of the second jumper pad pin segment 4222 longitudinally facing the substrate 20 is electrically connected to the gate pad 3211 of the second high-side power pad 21, and the end of the third jumper pad pin segment 4223 laterally away from the second jumper pad pin segment 4222 is electrically connected to the high-side drive chip 321.

[0052] Combination Figures 1-3As shown, the first jumper pad portion 412 includes a fourth jumper pad pin segment 4121 and a fifth jumper pad pin segment 4122. The fourth jumper pad pin segment 4121 is connected between the fifth jumper pad pin segment 4122 and the first support portion 411. At least a portion of the fifth jumper pad pin segment 4122 protrudes longitudinally toward the substrate 20 relative to the fourth jumper pad pin segment 4121 to form a second clearance groove 4123. The gate pad 3211 of the first high-side power chip 2111 is electrically connected to the fifth jumper pad pin segment 4122, and the high-side drive chip 321 is electrically connected to the fifth jumper pad pin segment 4122.

[0053] Combination Figures 1-3As shown, the third high-side drive floating power supply ground pin 52 includes a seventh pin segment 521, an eighth pin segment 522, and a ninth pin segment 523. The seventh pin segment 521 extends vertically and is laterally spaced on the side of the third high-side drive floating power supply voltage pin 62 away from the second high-side drive floating power supply voltage pin 61. The ninth pin segment 523 extends laterally and is laterally spaced on the side of the seventh pin segment 521 facing the substrate 20 and vertically spaced on the side of the seventh pin segment 521 facing the first boundary 11. The eighth pin segment 522 is connected between the seventh pin segment 521 and the ninth pin segment 523. The eighth pin segment 522 is electrically connected to the emitter pad 3212 of the third high-side power chip 2113. The end of the ninth pin segment 523 that is laterally away from the eighth pin segment 522 is electrically connected to the high-side driver chip 321. The third jumper pad portion 432 includes the sixth jumper pad pin segment 4321, the seventh jumper pad pin segment 4322, and the eighth jumper pad pin segment 4323. The seventh jumper pad pin segment 4322 extends laterally and is spaced longitudinally from the eighth pin segment 521. The third support portion 431 faces the substrate 20. The seventh jumper pad pin segment 4322 is laterally spaced on the side of the third support portion 431 facing the first boundary 11. The seventh jumper pad pin segment 4322 is also spaced on the side of the ninth pin segment 523 facing the substrate 20 in the longitudinal direction. The sixth jumper pad pin segment 4321 connects the third support portion 431 and the seventh jumper pad pin segment 4322. At least partially, one end of the seventh jumper pad pin segment 4322, laterally opposite to the sixth jumper pad pin segment 4321, extends into the second clearance groove 41. 23. The seventh jumper pad pin segment 4322 is longitudinally spaced on the side of the third jumper pad pin segment 4223 facing the substrate 20. The eighth jumper pad pin segment 4323 is connected to the end of the seventh jumper pad pin segment 4322 that is laterally away from the sixth jumper pad pin segment 4321. The eighth jumper pad pin segment 4323 extends longitudinally away from the substrate 20. The eighth jumper pad pin segment 4323 is located in the second clearance groove 4123 and is laterally spaced between the first high side pad portion 322 and the third jumper pad pin segment 4223.

[0054] Combination Figures 1-3As shown, the drive-side pin frame 30 also includes high-side drive power pins 70. The high-side drive power pins 70 are laterally spaced between the low-side drive pad 33 and the first high-side drive floating power supply voltage pin 60. The high-side drive power pins 70 are also longitudinally spaced on the side of the high-side drive pad 32 facing away from the substrate 20. The high-side drive power pins 70 include a first power pin segment 71, a second power pin segment 72, and a third power pin segment 73. Both the first power pin segment 71 and the third power pin segment 73 extend longitudinally. Compared to the third power pin segment 73, the first power pin segment 71 is laterally closer to the low-side drive pad 33. The second power pin segment 72 extends laterally and connects the first power pin segment 71 and the third power pin segment 73 along the longitudinal direction adjacent to the high-side drive pad 33. Between the ends of the side drive pads 32, the first power pin segment 71 extends longitudinally away from the high side drive pad 32 to the third boundary 13, and the third power pin segment 73 is spaced apart from the third boundary 13 at the end of the third power pin segment 73 that is longitudinally away from the high side drive pad 32. A first bootstrap chip 601, a second bootstrap chip 611, and a third bootstrap chip 621 are respectively provided on the first high side drive floating power supply ground pin 50, the second high side drive floating power supply ground pin 51, and the third high side drive floating power supply ground pin 52. The third bootstrap chip 621 and the second bootstrap chip 611 are electrically connected, the second bootstrap chip 611 and the first bootstrap chip 601 are electrically connected, the first bootstrap chip 601 and the third power pin segment 73 are electrically connected, and the high side drive chip 321 is electrically connected to the second power pin segment 72.

[0055] Specifically, by wire-connecting the third bootstrap chip 621 and the second bootstrap chip 611, wire-connecting the second bootstrap chip 611 and the first bootstrap chip 601, and then wire-connecting the first bootstrap chip 601 to the third power supply pin segment 73, the first bootstrap chip 601, the second bootstrap chip 611, and the third bootstrap chip 621 can be electrically connected to the high-side drive power supply pin 70. Compared to wire-connecting the first bootstrap chip 601, the second bootstrap chip 611, and the third bootstrap chip 621 to the high-side drive power supply pin 70 separately, this not only reduces the difficulty of wire bonding but also reduces the size of the high-side drive power supply pin 70, thereby reducing the space occupied by the high-side drive power supply pin 70 and providing as much usable space as possible for the setting of the high-side jumper pin 40.

[0056] Furthermore, this also allows the high-side drive power pin 70 to avoid interference with the high-side jumper pin 40, thus improving the stability of the high-side jumper pin 40 setting.

[0057] Combination Figures 1-3As shown, the first power supply pin segment 71, the second power supply pin segment 72, and the third power supply pin segment 73 form a third clearance groove 74. The high-side signal input pin 75 is disposed in the third clearance groove 74 and extends vertically. The high-side signal input pin 75 is electrically connected to the high-side driver chip 321. The high-side signal input pin 75 is horizontally spaced between the low-side driver pad 33 and the first high-side driver floating power supply voltage pin 60. The high-side signal input pin 75 is also spaced on the side of the second power supply pin segment 72 that is vertically away from the high-side driver pad 32. There are three high-side signal input pins 75, which are horizontally spaced and electrically connected to the high-side driver chip 321 and the low-side driver chip 331, respectively.

[0058] Specifically, by forming a third clearance slot 74 by the first power supply pin segment 71, the second power supply pin segment 72 and the third power supply pin segment 73, the three high-side signal input pins 75 are all set in the third clearance slot 74, which makes the structure between the three high-side signal input pins 75 and the high-side drive power supply pins 70 more compact.

[0059] Furthermore, the high-side driver chip 321 and the low-side driver chip 331 are electrically connected, which can achieve interlocking between the high-side driver chip 321 and the low-side driver chip 331, preventing the high-side driver chip 321 and the low-side driver chip 331 from being turned on at the same time, thus avoiding short circuit and tube explosion from the root cause.

[0060] Combination Figures 1-3As shown, the low-side drive pad 33 protrudes at least partially relative to the high-side drive pad 32 in the longitudinal direction toward the side away from the substrate 20. The drive-side ground pin 31 includes a first support pin 34, which extends laterally. One end of the first support pin 34 is connected to the side of the high-side drive pad 32 in the lateral direction toward the first boundary 11, and the other end of the first support pin 34 extends to the first boundary 11. The first support pin 34 is located at the end of the high-side drive pad 32 in the longitudinal direction adjacent to the substrate 20. The first support pin 34 is spaced apart from the side of the low-side drive pad 33 in the longitudinal direction toward the substrate 20. The first support pin 34, the low-side drive pad 33, and the high-side drive pad 32 surround... The fourth clearance slot 37 is formed; the drive-side pin frame 30 also includes a low-side jumper pin 38, which is electrically connected to the low-side power chip 221 and the low-side driver chip 331 respectively. The low-side jumper pin 38 is disposed in the fourth clearance slot 37 and is longitudinally spaced from the low-side driver pad 33 and the first support pin 34 respectively. The low-side jumper pin 38 extends laterally, with one end extending to the third boundary 13 and the other end being laterally spaced from the high-side driver pad 32. There are three low-side jumper pins 38, which are longitudinally spaced from each other in the second clearance slot 4123. The three low-side jumper pins 38 are electrically connected to the three low-side power chips 221 respectively.

[0061] Specifically, by setting the low-side jumper pin 38 and making the low-side jumper pin 38 wire-connected to the low-side driver chip 331 and the low-side power chip 221 respectively, the wire-connection between the low-side driver chip 331 and the low-side jumper pin 38 can be made more stable, and the wire-connection between the low-side power chip 221 and the low-side jumper pin 38 can also be made more stable.

[0062] Furthermore, one end of the first support pin 34 is connected to the high-side drive pad 32 along the side facing the first boundary 11 in the lateral direction, and the other end of the first support pin 34 extends to the first boundary 11. The first support pin 34 is located at one end of the high-side drive pad 32 along the longitudinal direction adjacent to the substrate 20. The first support pin 34 is spaced apart on the side of the low-side drive pad 33 along the longitudinal direction facing the substrate 20. The first support pin 34, the low-side drive pad 33 and the high-side drive pad 32 form a fourth clearance groove 37, and three low-side jumper pins 38 are disposed in the fourth clearance groove 37.

[0063] In this way, not only can the first support pin 34 improve the stability of the drive-side ground pin 31, but the structure between the low-side jumper pin 38 and the drive-side ground pin 31 can also be made more stable.

[0064] Combination Figures 1-3As shown, the drive-side ground pin 31 also includes a second support pin 35, one end of which is connected to the low-side drive pad 33 laterally toward the first boundary 11, and the other end of which extends to the third boundary 13; and / or the drive-side ground pin 31 also includes a third support pin 36, one end of which is connected to the low-side drive pad 33 laterally toward the third boundary 13, and the other end of which extends to the third boundary 13.

[0065] Specifically, the first support pin 34 extends to the first boundary 11, which can improve the stability of the drive-side ground pin 31 in the lateral direction. One end of the second support pin 35 is connected to the low-side drive pad 33 in the lateral direction toward the first boundary 11, and the other end of the second support pin 35 extends to the third boundary 13, which can improve the stability of the drive-side ground pin 31 in the lateral direction. Furthermore, the extension of the other end of the second support pin 35 to the third boundary 13 does not increase the vertical dimension of the drive-side pin frame 30.

[0066] Furthermore, the drive-side ground pin 31 also includes a third support pin 36. One end of the third support pin 36 is connected to the low-side drive pad 33 along the side facing the third boundary 13 in the lateral direction, and the other end of the third support pin 36 extends to the third boundary 13, which can improve the stability of the drive-side ground pin 31 in the longitudinal direction.

[0067] It should be noted that because the horizontal dimension of the drive-side ground pin 31 is larger than its vertical dimension, the number of support pins that improve the stability of the drive-side ground pin 31 in the horizontal direction is greater than the number of support pins that improve the stability of the drive-side ground pin 31 in the vertical direction, while limiting the number of support pins as much as possible, can make the layout of the support pins more reasonable.

[0068] In some embodiments of the present invention, by setting the thickness L3 of the substrate 20 in the vertical direction to be less than 1.2 mm, the thickness of the substrate 20 can be reduced, which is beneficial for heat dissipation of the substrate 20, thereby improving the current carrying capacity of the semiconductor device 100.

[0069] It should be noted that the power chip can be composed of an insulated gate bipolar transistor (IGBT) and a freewheeling diode (FRD), or it can be a metal-oxide-semiconductor field-effect transistor (MOS), or it can be a reverse-conducting IGBT that integrates the IGBT and the freewheeling diode into a single chip, etc.

[0070] In some embodiments of the present invention, the semiconductor material of the power chip may be silicon.

[0071] In other embodiments of the present invention, the semiconductor material of the power chip may also be a wide-bandgap semiconductor, such as SiC and GaN.

[0072] In some embodiments of the present invention, the substrate 20 may include pads and an insulating heat dissipation layer disposed below the pads. The insulating heat dissipation layer is mainly formed by sequentially stacking an insulating resin sheet and a copper layer, or by sequentially stacking an insulating resin sheet and an aluminum layer. The main material of the pads is copper or aluminum. In this case, most of the substrate 20 is encapsulated by the molding compound 10, and the outer surface of the copper layer or the outer surface of the aluminum layer in the insulating heat dissipation layer of the substrate 20 is exposed from the outer surface of the molding compound 10. Alternatively, the substrate 20 may include pads, an insulating layer, and a heat dissipation layer formed by sequentially stacking. The main material of the pads is a copper layer or an aluminum layer, the main material of the insulating layer is an ALN, or AL, or SiN, or a ceramic insulating layer composed of several materials, and the main material of the heat dissipation layer is a copper layer or an aluminum layer. In this case, most of the substrate 20 is encapsulated by the molding compound 10, and the outer surface of the heat dissipation layer of the substrate 20 is exposed from the outer surface of the molding compound 10. Alternatively, the substrate 20 may include pads and an insulating layer disposed below the pads. The main material of the insulating layer is an ALN ​​ceramic insulating layer, or an AL... The substrate 20 may be constructed with a ceramic insulating layer or a SiN ceramic insulating layer, in which case most of the substrate 20 is encapsulated by the molding compound 10, and the outer surface of the insulating layer of the substrate 20 is exposed from the outer surface of the molding compound 10; alternatively, the substrate 20 may be formed solely of solder pads, in which case the substrate 20 is disposed within the molding compound 10, and the molding compound 10 completely encapsulates the substrate 20. The specific structural form of the substrate 20 can be adjusted according to the specific requirements and application environment of the semiconductor device 100.

[0073] In some embodiments of the present invention, the semiconductor device 100 can withstand a voltage of 600V-1200V and a current carrying capacity of 30-50A.

[0074] In some embodiments of the present invention, when the substrate 2020 is composed of an insulating layer and copper layers on both vertical sides, the thickness of the insulating layer along the vertical direction can be 0.38 mm, and the thickness of the copper layer along the vertical direction can be 0.3 mm.

[0075] It should be noted that the power chip can be composed of an insulated gate bipolar transistor (IGBT) and a freewheeling diode (FRD), or it can be a metal-oxide-semiconductor field-effect transistor (MOS), or it can be a reverse-conducting IGBT that integrates the IGBT and the freewheeling diode into a single chip, etc.

[0076] In some embodiments of the present invention, the electrical connection between the high-side driving chip 321 and the high-side driving floating power supply ground pin is a gold-copper wire, the electrical connection between the high-side driving chip 321 and the high-side jumper pin 40 is a gold-copper wire, the electrical connection between the gate pad 3211 of the high-side power chip 211 and the high-side jumper pin 40 is an aluminum wire, and the electrical connection between the emitter pad 3212 of the high-side power chip 211 and the high-side driving floating power supply ground pin is an aluminum wire.

[0077] In some embodiments of the present invention, the diameter of the aluminum wire is 5 mil, which is larger than that of the gold-copper wire. This can further reduce the risk of wire arc deformation and molding failure caused by vibration.

[0078] The circuit board assembly according to the present invention may mainly include the semiconductor device 100 described above. Specifically, since the semiconductor device 100 has a more reliable structure and higher reliability and stability, applying the semiconductor device 100 to the circuit board assembly can prevent short circuits in the circuit board assembly and improve the working performance of the circuit board assembly.

[0079] The electrical control box according to the present invention may mainly include the aforementioned circuit board assembly. Specifically, since the circuit board assembly has a more reliable structure and good working performance, applying the circuit board assembly to the electrical control box can improve the working performance of the electrical control box and extend its service life.

[0080] The electrical device according to the present invention may mainly include: the aforementioned electrical control box. Specifically, because the electrical control box has a more reliable structure and good working performance, applying the electrical control box to electrical devices can improve the working performance and quality of the electrical devices. In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0081] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0082] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A semiconductor device, characterized in that, The semiconductor device includes: A molding compound (10) having a horizontal, a vertical and a longitudinal dimension, wherein the horizontal, the longitudinal and the vertical dimensions are perpendicular to each other; A substrate (20) is at least partially disposed within the molding compound (10). The substrate (20) is provided with low-side power pads (22) and high-side power pads (21) spaced apart in the lateral direction. A low-side power chip (221) is disposed on the low-side power pads (22), and a high-side power chip (211) is disposed on the high-side power pads (21). The two lateral boundaries of the molding compound (10) are defined as a first boundary (11) and a second boundary (12), respectively. In the lateral direction, the low-side power chip (221) is closer to the first boundary (11), and the high-side power chip (211) is closer to the second boundary (12). A driving-side pin frame (30) is at least partially disposed within the molding compound (10) and spaced longitudinally from the substrate (20). A driving-side ground pin (31) is disposed on the driving-side pin frame (30). A low-side driving pad (33) and a high-side driving pad (32) are disposed on the driving-side ground pin (31). A low-side driving chip (331) is disposed on the low-side driving pad (33), and a high-side driving chip (321) is disposed on the high-side driving pad (32). The boundary of the low-side driving chip (331) facing the substrate (20) longitudinally is defined as the low-side driving boundary, and the boundary of the high-side driving chip (321) facing away from the substrate (20) longitudinally is defined as the high-side driving boundary. The low-side driving boundary is spaced apart from the high-side driving boundary facing away from the substrate (20) longitudinally. The orthographic projection of the low-side driving chip (331) in the horizontal direction is set as the low-side driving chip projection, and the orthographic projection of the high-side driving chip (321) in the horizontal direction is set as the high-side driving chip projection. The low-side driving chip projection is spaced apart on the side of the high-side driving chip projection that is longitudinally away from the substrate (20). The centerline of the molding compound (10) extending longitudinally is set as the longitudinal centerline (15). The low-side driving chip (331) and the high-side driving chip (321) are both spaced apart on the side of the longitudinal centerline (15) facing the first boundary (11). The low-side driver chip (331) and the low-side power chip (221) are electrically connected. The driver-side pin frame (30) also includes a high-side jumper pin (40). The high-side jumper pin (40) is at least partially located on the side of the longitudinal centerline (15) facing the second boundary (12) and includes a jumper pad portion and a support portion. The jumper pad portion is electrically connected to the high-side driver chip (321) and the high-side power chip (211) respectively. The two longitudinal boundaries of the molding compound (10) are set as the third boundary (13) and the fourth boundary (14) respectively. In the longitudinal direction, the driver-side pin frame (30) is closer to the third boundary (13), and the substrate (20) is closer to the fourth boundary (14). The support portion extends in the longitudinal direction and one end is connected to the jumper pad portion, and the other end extends to the third boundary (13).

2. The semiconductor device according to claim 1, characterized in that, The driving-side pin frame (30) further includes a high-side driving floating power supply ground pin and a high-side driving floating power supply voltage pin. The high-side power chip (211) includes an emitter pad (3212) and a gate pad (3211). The high-side jumper pin (40) is electrically connected to the gate pad (3211) and the high-side driving chip (321) respectively. The high-side driving floating power supply ground pin is electrically connected to the emitter pad (3212) and the high-side driving chip (321) respectively. A bootstrap chip is provided on the high-side driving floating power supply voltage pin. The bootstrap chip is electrically connected to the high-side driving chip (321). The high-side power chip (211) consists of three chips, namely a first high-side power chip (2111), a second high-side power chip (2112), and a third high-side power chip (2113). The high-side jumper pin (40) consists of three chips, namely a first high-side jumper pin (41), a second high-side jumper pin (42), and a third high-side jumper pin (43). The first high-side jumper pin (41) is electrically connected to the gate pad (3211) of the first high-side power chip (2111) and the high-side driver chip (321), respectively. The second high-side jumper pin (42) is electrically connected to the gate pad (3211) of the second high-side power chip (2112) and the high-side driver chip (321), respectively. The third high-side jumper pin (43) is electrically connected to the gate pad (3211) of the third high-side power chip (2113) and the high-side driver chip (321), respectively. The high-side drive floating power supply ground pins are three in number, namely a first high-side drive floating power supply ground pin (50), a second high-side drive floating power supply ground pin (51), and a third high-side drive floating power supply ground pin (52). The high-side drive floating power supply voltage pins are also three in number, namely a first high-side drive floating power supply voltage pin (60), a second high-side drive floating power supply voltage pin (61), and a third high-side drive floating power supply voltage pin (62) spaced laterally. At least a portion of the first high-side drive floating power supply ground pin (50) is spaced laterally from the first high-side drive floating power supply ground pin (51). Between a high-side drive floating power supply voltage pin (60) and a second high-side drive floating power supply voltage pin (61), at least a portion of the second high-side drive floating power supply ground pin (51) is laterally spaced between the second high-side drive floating power supply voltage pin (61) and the third high-side drive floating power supply voltage pin (62), and at least a portion of the third high-side drive floating power supply ground pin (52) is laterally spaced on the side of the third high-side drive floating power supply voltage pin (62) away from the second high-side drive floating power supply voltage pin (61); The support portion of the first high-side jumper pin (41) is laterally spaced between the first high-side drive floating power supply ground pin (50) and the second high-side drive floating power supply voltage pin (61). The support portion of the second high-side jumper pin (42) is laterally spaced between the second high-side drive floating power supply ground pin (51) and the third high-side drive floating power supply voltage pin (62). The support portion of the third high-side jumper pin (43) is laterally spaced on the side of the third high-side drive floating power supply ground pin (52) away from the third high-side drive floating power supply voltage pin (62).

3. The semiconductor device according to claim 2, characterized in that, The first high-side drive floating power supply ground pin (50) includes a first pin segment (501), a second pin segment (502), and a third pin segment (503). The first pin segment (501) and the second pin segment (502) both extend longitudinally. The second pin segment (502) is connected to one end of the first pin segment (501) longitudinally toward the substrate (20). One end of the third pin segment (503) is connected between the first pin segment (501) and the second pin segment (502) and extends laterally toward the low-side drive pad (33). The first high-side drive floating power supply voltage pin ( 60) The first high-side drive floating power supply voltage pin (60) is spaced apart on the side of the first pin segment (501) facing the first boundary (11) in the lateral direction. The first high-side drive floating power supply voltage pin (60) is spaced apart on the side of the third pin segment (503) facing away from the substrate (20) in the longitudinal direction. The second pin segment (502) is spaced apart on the side of the high-side drive pad (32) facing the second boundary (12) in the lateral direction. The second pin segment (502) is electrically connected to the emitter pad (3212) of the first high-side power pad (21). The third pin segment (503) is electrically connected to the high-side drive chip (321). The support portion and the jumper pad portion of the first high-side jumper pin (41) are respectively defined as the first support portion (411) and the first jumper pad portion (412). The first support portion (411) is spaced apart on one side of the first pin segment (501) and the second pin segment (502) facing the second boundary (12) laterally. The first jumper pad portion (412) is spaced apart on one side of the first high-side drive floating power supply ground pin (50) facing the substrate (20) laterally. The high-side drive pad (32) The first high-side pad portion (322) includes a first high-side pad portion (322) and a second high-side pad portion (323). The second high-side pad portion (323) is disposed on the side of the first high-side pad portion (322) facing the second boundary (12) in the lateral direction. The first high-side pad portion (322) is at least partially protruding in the longitudinal direction relative to the side of the second high-side pad portion (323) facing the substrate (20) to form a first clearance groove (324). The first jumper pad portion (412) extends at least partially into the first clearance groove (324).

4. The semiconductor device according to claim 3, characterized in that, The second high-side drive floating power supply ground pin (51) includes a fourth pin segment (511), a fifth pin segment (512), and a sixth pin segment (513). The fourth pin segment (511) extends longitudinally and is spaced laterally on the side of the second high-side drive floating power supply voltage pin (61) away from the first high-side drive floating power supply voltage pin (60). The fifth pin segment (512) extends laterally, and one end of the fifth pin segment (512) is connected to the end of the fourth pin segment (511) longitudinally adjacent to the substrate (20). The fifth pin segment (512) is spaced apart from the second high-side drive floating power supply voltage pin (61). The pin (61) faces the substrate (20) longitudinally. The sixth pin segment (513) is connected to the other end of the fifth pin segment (512) and extends longitudinally toward the substrate (20). The sixth pin segment (513) is spaced apart from the first support portion (411) on the side that is laterally away from the high-side drive pad (32). The end of the sixth pin segment (513) that is longitudinally adjacent to the substrate (20) is electrically connected to the emitter pad (3212) of the second high-side power chip (2112). The end of the sixth pin segment (513) that is longitudinally away from the substrate (20) is electrically connected to the high-side drive chip (321). The support portion and the jumper pad portion of the second high-side jumper pin (42) are respectively defined as the second support portion (421) and the second jumper pad portion (422). The second jumper pad portion (422) includes a first jumper pad pin segment (4221), a second jumper pad pin segment (4222), and a third jumper pad pin segment (4223). The first jumper pad pin segment (4221) extends laterally and one end is connected to the second support portion (421). The first jumper pad pin segment (4221) is spaced apart on the side of the fifth pin segment (512) facing the substrate (20) longitudinally. The second jumper pad pin segment (4222) is on the other side of the first jumper pad pin segment (4221). The second jumper pad pin segment (4222) is spaced apart from the sixth pin segment (513) on the side that is laterally away from the high-side drive pad (32). The third jumper pad pin segment (4223) is spaced apart from the sixth pin segment (513) on the side that is longitudinally towards the substrate (20). One end of the second jumper pad pin segment (4222) facing the substrate (20) is electrically connected to the gate pad (3211) of the second high-side power pad (21). One end of the third jumper pad pin segment (4223) away from the second jumper pad pin segment (4222) is electrically connected to the high-side drive chip (321).

5. The semiconductor device according to claim 4, characterized in that, The first jumper pad portion (412) includes a fourth jumper pad pin segment (4121) and a fifth jumper pad pin segment (4122). The fourth jumper pad pin segment (4121) is connected between the fifth jumper pad pin segment (4122) and the first support portion (411). At least a portion of the fifth jumper pad pin segment (4122) protrudes longitudinally toward the substrate (20) relative to the fourth jumper pad pin segment (4121) to form the second clearance groove (4123). The gate pad (3211) of the first high-side power chip (2111) is electrically connected to the fifth jumper pad pin segment (4122), and the high-side driver chip (321) is electrically connected to the fifth jumper pad pin segment (4122).

6. The semiconductor device according to claim 5, characterized in that, The third high-side drive floating power supply ground pin (52) includes a seventh pin segment (521), an eighth pin segment (522), and a ninth pin segment (523). The seventh pin segment (521) extends longitudinally and is laterally spaced on the side of the third high-side drive floating power supply voltage pin (62) away from the second high-side drive floating power supply voltage pin (61). The ninth pin segment (523) extends laterally and is laterally spaced on the side of the seventh pin segment (521) facing the third high-side drive floating power supply voltage pin (61). The substrate (20) is disposed on one side of the seventh pin segment (521) facing the first boundary (11) in the longitudinal direction. The eighth pin segment (522) is connected between the seventh pin segment (521) and the ninth pin segment (523). The eighth pin segment (522) is electrically connected to the emitter pad (3212) of the third high-side power chip (2113). The end of the ninth pin segment (523) that is laterally away from the eighth pin segment (522) is electrically connected to the high-side driver chip (321). The third jumper pad portion (432) includes a sixth jumper pad pin segment (4321), a seventh jumper pad pin segment (4322), and an eighth jumper pad pin segment (4323). The seventh jumper pad pin segment (4322) extends laterally and is spaced longitudinally on the side of the third support portion (431) facing the substrate (20). The seventh jumper pad pin segments (4322) are spaced laterally on the side of the third support portion (431) facing the first boundary (11). The seventh jumper pad pin segments (4322) are spaced longitudinally on the side of the ninth pin segment (523) facing the substrate (20). The sixth jumper pad pin segment (4321) is connected between the third support portion (431) and the seventh jumper pad pin segment (4322). The end of the line pad pin segment (4322) that is laterally opposite to the sixth jumper pad pin segment (4321) extends at least partially into the second clearance groove (4123). The seventh jumper pad pin segment (4322) is longitudinally spaced on the side of the third jumper pad pin segment (4223) facing the substrate (20). The eighth jumper pad pin segment (4323) is connected to the end of the seventh jumper pad pin segment (4322) that is laterally opposite to the sixth jumper pad pin segment (4321). The eighth jumper pad pin segment (4323) extends longitudinally away from the substrate (20). The eighth jumper pad pin segment (4323) is located in the second clearance groove (4123) and is laterally spaced between the first high-side pad portion (322) and the third jumper pad pin segment (4223).

7. The semiconductor device according to claim 2, characterized in that, The driving-side pin frame (30) also includes a high-side driving power pin (70), which is laterally spaced between the low-side driving pad (33) and the first high-side driving floating power supply voltage pin (60), and is longitudinally spaced on the side of the high-side driving pad (32) away from the substrate (20). The high-side drive power pin (70) includes a first power pin segment (71), a second power pin segment (72), and a third power pin segment (73). The first power pin segment (71) and the third power pin segment (73) both extend longitudinally. Compared to the third power pin segment (73), the first power pin segment (71) is more laterally adjacent to the low-side drive pad (33). The second power pin segment (72) extends laterally and connects the ends of the first power pin segment (71) and the third power pin segment (73) that are longitudinally adjacent to the high-side drive pad (32). The end of the first power pin segment (71) that is longitudinally away from the high-side drive pad (32) extends to the third boundary (13). The end of the third power pin segment (73) that is longitudinally away from the high-side drive pad (32) is spaced apart from the third boundary (13). A first bootstrap chip (601), a second bootstrap chip (611), and a third bootstrap chip (621) are respectively provided on the first high-side drive floating power supply ground pin (50), the second high-side drive floating power supply ground pin (51), and the third high-side drive floating power supply ground pin (52). The third bootstrap chip (621) and the second bootstrap chip (611) are electrically connected. The second bootstrap chip (611) and the first bootstrap chip (601) are electrically connected. The first bootstrap chip (601) and the third power supply pin segment (73) are electrically connected. The high-side drive chip (321) is electrically connected to the second power supply pin segment (72).

8. The semiconductor device according to claim 7, characterized in that, The first power pin segment (71), the second power pin segment (72), and the third power pin segment (73) form a third clearance groove (74). The high-side signal input pin (75) is disposed in the third clearance groove (74) and extends longitudinally. The high-side signal input pin (75) is electrically connected to the high-side driver chip (321). The high-side signal input pin (75) is spaced laterally between the low-side driver pad (33) and the first high-side driver floating power supply voltage pin (60). The high-side signal input pin (75) is spaced laterally on the side of the second power pin segment (72) that is longitudinally away from the high-side driver pad (32). There are three high-side signal input pins (75), which are spaced apart in the horizontal direction and are electrically connected to the high-side driving chip (321) and the low-side driving chip (331) respectively.

9. The semiconductor device according to claim 8, characterized in that, The low-side drive pad (33) is at least partially protruding longitudinally toward the side away from the substrate (20) relative to the high-side drive pad (32). The drive-side ground pin (31) includes a first support pin (34) that extends laterally. One end of the first support pin (34) is connected to the side of the high-side drive pad (32) laterally toward the first boundary (11). The other end of the first support pin (34) extends to the first boundary (11). The first support pin (34) is located at one end of the high-side drive pad (32) longitudinally adjacent to the substrate (20). The first support pins (34) are spaced apart on the side of the low-side drive pad (33) longitudinally toward the substrate (20). The first support pin (34), the low-side drive pad (33), and the high-side drive pad (32) form a fourth clearance groove (37). The driving-side pin frame (30) also includes a low-side jumper pin (38), which is electrically connected to the low-side power chip (221) and the low-side driving chip (331) respectively. The low-side jumper pin (38) is disposed in the fourth clearance slot (37) and is longitudinally spaced from the low-side driving pad (33) and the first support pin (34) respectively. The low-side jumper pin (38) extends laterally. One end of the low-side jumper pin (38) extends to the third boundary (13) and the other end is laterally spaced from the high-side driving pad (32). The low-side jumper pins (38) are three in number and are spaced apart longitudinally in the second clearance slot (4123). The three low-side jumper pins (38) are electrically connected to the three low-side power chips (221) respectively.

10. The semiconductor device according to claim 9, characterized in that, The drive-side ground pin (31) further includes a second support pin (35), one end of which is connected to the low-side drive pad (33) laterally toward the first boundary (11), and the other end of which extends to the third boundary (13); and / or The drive-side ground pin (31) also includes a third support pin (36), one end of which is connected to the side of the low-side drive pad (33) laterally toward the third boundary (13), and the other end of which extends to the third boundary (13).

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