Quantum dot composites, quantum dot compositions comprising quantum dot composites, and electronic devices comprising quantum dot composites.

Abstract

The embodiments provide quantum dot complexes. The quantum dot complexes include quantum dots and first and second ligands, each coordinated to the surface of the quantum dots. The first ligand is a chain-like bidentate ligand comprising an ethylene glycol group (-OCH2CH2O-), and the second ligand is a ligand comprising an acryloyl group (CH2=CHC(=O)-) and an ethylene glycol group.

Description

Technical Field

[0001] The embodiments relate to quantum dot composites, quantum dot compositions including quantum dot composites, electronic devices including quantum dot composites, and electronic equipment including quantum dot composites. Background Technology

[0002] Quantum dots are nanocrystals of semiconductor materials and exhibit quantum confinement effects. When a quantum dot receives light from an excitation source and reaches an excited state, it emits energy according to its corresponding band gap. Quantum dots of the same material can emit light of different wavelengths depending on their size. Accordingly, the size of the quantum dot can be adjusted to obtain light within a desired wavelength range and exhibit properties such as excellent color purity and high luminous efficiency. Therefore, quantum dots are suitable for a wide variety of devices.

[0003] Quantum dots can be used as materials to perform various optical functions (e.g., light conversion) in optical components. Quantum dots are nanoscale semiconductor nanocrystals, and different band gaps can be achieved by controlling the size and composition of the nanocrystals, thereby emitting light of various wavelengths.

[0004] Optical components incorporating such quantum dots can be in thin-film form, for example, a thin-film form patterned for each sub-pixel. Such optical components can also be used as color conversion components in devices incorporating various light sources.

[0005] However, quantum dots are easily oxidized by moisture and oxygen, and their efficiency decreases when they are oxidized.

[0006] This problem can be addressed by coordinating reactive ligands around the quantum dots. However, due to ligand desorption and rearrangement, it is difficult to effectively prevent the oxidation of the quantum dots. Summary of the Invention

[0007] Technical issues

[0008] Embodiments include quantum dot composites with improved photostability, quantum dot compositions comprising quantum dot composites, electronic devices comprising quantum dot composites, and electronic equipment comprising quantum dot composites.

[0009] Solution to the problem

[0010] According to an embodiment, the quantum dot complex may include: a quantum dot; and a first ligand and a second ligand, each coordinated on the surface of the quantum dot, wherein:

[0011] The first ligand may be a chain-like bidentate ligand including an ethylene glycol group (-OCH2CH2O-), and the second ligand may be a ligand including an acryloyl group (CH2=CHC(=O)-) and an ethylene glycol group.

[0012] In this implementation, the first ligand can be represented by Equation 1:

[0013] [Formula 1]

[0014] .

[0015] In Equation 1,

[0016] R1 can be a C1-C2 alkyl group.

[0017] R2 can be hydrogen or C1-C2 alkyl, each independently.

[0018] a1 can be an integer selected from 2 to 4.

[0019] a2 can be an integer selected from 0 to 3, and

[0020] a3 can be an integer of 1 or 2.

[0021] In the embodiments, R1 may be methyl; and R2 may each be hydrogen or methyl independently.

[0022] In the embodiments, R1 may be methyl; and R2 may each be hydrogen.

[0023] In this embodiment, R1 and R2 may each be a methyl group.

[0024] In the implementation, a1 can be 2 or 3.

[0025] In the implementation, a2 can be 3; and a3 can be 1.

[0026] In this embodiment, the first ligand may be selected from the following compounds:

[0027] .

[0028] In an embodiment, the second ligand may further include a carboxyl group (-C(=O)OH); and the second ligand may be coordinated to the surface of the quantum dot via the carboxyl group.

[0029] In this embodiment, the second ligand may be one of the following compounds:

[0030] .

[0031] In an implementation, the total amount of the first and second ligands can range from about 15 wt% to about 25 wt%, based on the total weight of the quantum dot complex.

[0032] In an implementation, the molar ratio of the first ligand to the second ligand can range from about 0.3:1 to about 0.8:1.

[0033] In implementations, quantum dots may include: group II-VI semiconductor compounds; group III-V semiconductor compounds; group III-VI semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; group IV elements or compounds; or combinations thereof.

[0034] In some implementations, a quantum dot may include a core and a shell covering the core.

[0035] In some embodiments, the quantum dot may include a copper indium gallium sulfide (CIGS) core and a ZnS shell.

[0036] According to an embodiment, the quantum dot composition may include a quantum dot composite and a solvent.

[0037] According to an embodiment, the electronic device may include a quantum dot composite.

[0038] In an embodiment, the electronic device may further include a color filter and / or a color conversion layer, wherein the color filter and / or color conversion layer may include a quantum dot composite.

[0039] In an embodiment, the electronic device may further include a light source, wherein the light source may be a light-emitting device, the light-emitting device including a first electrode, a second electrode facing the first electrode, and an emitting layer between the first electrode and the second electrode.

[0040] According to the embodiments, electronic equipment may include electronic devices, which may be flat panel displays, curved displays, computer monitors, medical monitors, televisions, billboards, indoor lights, outdoor lights, signal lights, head-up displays, fully transparent displays, partially transparent displays, flexible displays, rollable displays, foldable displays, retractable displays, laser printers, telephones, mobile phones, tablet computers, tablet PCs, personal digital assistants (PDAs), wearable devices, laptop computers, digital cameras, video cameras, viewfinders, microdisplays, three-dimensional (3D) displays, virtual reality displays, augmented reality displays, vehicles, video walls comprising multiple displays spliced ​​together, theater screens, stadium screens, light therapy devices, or signs.

[0041] Beneficial effects of the invention

[0042] The quantum dot composite according to the embodiments has improved lightfastness due to the introduction of a first ligand and a second ligand on the surface of the quantum dots, thereby improving the efficiency and lifespan of electronic devices using the quantum dot composite. Attached Figure Description

[0043] Figure 1 This is a schematic cross-sectional view of the light-emitting device according to an embodiment.

[0044] Figure 2 and Figure 3 Each is a schematic cross-sectional view of an electronic device according to an embodiment.

[0045] Figure 4 The graphs show the change in the light conversion efficiency of the quantum dot composites of Experimental Examples 1 to 7 over time.

[0046] Figure 5 A graph showing the change in light conversion efficiency over time for the quantum dot composites of Examples 1 to 3 and Comparative Examples 1 to 3.

[0047] Figure 6 A graph showing the change in light conversion efficiency over time for the quantum dot composites of Examples 4 to 6 and Comparative Examples 4 to 6.

[0048] Figure 7 Thermogravimetric analysis (TGA) diagrams of the CIGS quantum dot composites obtained in Experimental Examples 1 and 4, Examples 2 and 5, and Comparative Example 5 are shown. Detailed Implementation

[0049] Because this disclosure allows for various modifications and numerous embodiments, illustrative embodiments will be set forth in the accompanying drawings and described in the written description. The effects and features of this disclosure, as well as methods for implementing them, will be explained with reference to the embodiments described in detail below with reference to the accompanying drawings. However, this disclosure is not limited to the embodiments described below and can be embodied in various forms.

[0050] In the specification, expressions used in the singular such as “a”, “an”, and “the” are intended to include the plural form as well, unless the context clearly indicates otherwise.

[0051] It will be understood that the terms “comprise,” “comprising,” “include,” and / or “including” as used herein indicate the presence of a feature or element of the narrative, but do not preclude the addition of one or more other features or elements.

[0052] It will be further understood that when a layer, zone, or element is referred to as being "on" another layer, zone, or element, it can be directly or indirectly on that other layer, zone, or element. That is, for example, an intermediary layer, zone, or element may exist.

[0053] One or more embodiments will now be described in more detail with reference to the accompanying drawings. Regardless of the drawing numbers, those components that are the same or corresponding to each other are given the same reference numerals, and redundant explanations are omitted.

[0054] For ease of explanation, the dimensions of the elements in the accompanying drawings may be enlarged or reduced. As an example, for the sake of convenience of description, the dimensions and thicknesses of each element shown in the drawings are arbitrarily represented, and therefore, this disclosure is not necessarily limited thereto.

[0055] In this specification, the term "quantum dot complex" may refer to a material comprising quantum dots and ligands coordinated to the quantum dots. A quantum dot may include a core and a shell surrounding the core.

[0056] In the specification, the term "photoconversion efficiency (PCE)" refers to the ratio of fluorescent photons to excitation photons.

[0057] [Quantum dot complex]

[0058] According to an embodiment, the quantum dot complex may include: quantum dots; and a first ligand and a second ligand, each coordinated to the surface of the quantum dots. The first ligand may be a chain-like bidentate ligand including an ethylene glycol group (-OCH2CH2O-), and the second ligand may be a ligand including an acryloyl group (CH2=CHC(=O)-) and an ethylene glycol group.

[0059] Quantum dot ligands protect quantum dots and allow them to be uniformly dispersed in a solvent. To achieve these effects, quantum dot ligands according to embodiments may include two types of ligands with different structures.

[0060] In this implementation, the first ligand can be represented by Equation 1:

[0061] [Formula 1]

[0062] .

[0063] In Equation 1,

[0064] R1 can be a C1-C2 alkyl group.

[0065] R2 can be hydrogen or C1-C2 alkyl, each independently.

[0066] a1 can be an integer selected from 2 to 4.

[0067] a2 can be an integer selected from 0 to 3, and

[0068] a3 can be an integer of 1 or 2.

[0069] In an embodiment, R1 may be methyl or ethyl, and R2 may each be hydrogen or methyl independently. For example, in an embodiment, R1 may be methyl, and R2 may each be hydrogen or methyl independently.

[0070] In an embodiment, R1 may be methyl or ethyl, and R2 may each be hydrogen. For example, in an embodiment, R1 may be methyl, and R2 may each be hydrogen.

[0071] In this embodiment, R1 and R2 may each be a methyl group.

[0072] In the implementation, a1 can be 2 or 3.

[0073] In the implementation, a2 can be 3.

[0074] In the implementation method, a3 can be 1.

[0075] For example, in an implementation, a1 can be 2 or 3, a2 can be 3, and a3 can be 1.

[0076] In this embodiment, the first ligand may be selected from the following compounds:

[0077]

[0078]

[0079] .

[0080] The first ligand has a chain structure including an ethylene glycol group (-OCH2CH2O-), thereby increasing the solubility of the quantum dot in hydrophilic solvents and minimizing contact between the quantum dot and an external source that can oxidize the quantum dot. The first ligand can form a more stable bond with the quantum dot by coordinating to the quantum dot at two sites. For the first ligand, due to the inclusion of a short alkoxy group at the end of the chain, it can acquire greater polarity than ligands with aryloxy or long alkoxy groups at the end of the chain. In embodiments, the hydrogen atom in the ethylene glycol group of the first ligand can be substituted with a short alkyl group.

[0081] The second ligand, comprising acryloyl (CH2=CHC(=O)-) and ethylene glycol groups, increases the dispersibility of the quantum dot complex in hydrophilic solvents. When the quantum dot complex is uniformly dispersed in the solvent, light-induced stress is also dispersed, which improves the lightfastness of the quantum dot complex film.

[0082] In an embodiment, the second ligand may further include a carboxyl group (-C(=O)OH), and the second ligand may be coordinated to the surface of the quantum dot via the carboxyl group. The second ligand may improve photostability by coordinating the carboxyl group to the surface of the quantum dot.

[0083] In an embodiment, the second ligand may include the following compounds:

[0084] .

[0085] Because it includes both the first and second ligands, the quantum dot complex according to the embodiments may have improved lightfastness. This is believed to be due to a balance achieved between enhancing the binding of the ligand to the quantum dot and improving the dispersibility of the ligand in the solvent.

[0086] In embodiments, the total amount of the first and second ligands in the quantum dot complex can range from about 15 wt% to about 25 wt%, based on the total weight of the quantum dot complex. For example, in the quantum dot complex, the sum of the total amount of the first and second ligands can range from about 15 wt% to about 25 wt%, based on the total weight of the quantum dot complex. When the total amount of the first and second ligands is within the above range, the lightfastness of the quantum dot complex can be improved. The first and second ligands can be introduced into the quantum dot complex by exchanging with natural ligands. In embodiments, the natural ligands of the quantum dot complex may include, for example, oleic acid, lauric acid, or stearic acid, but embodiments are not limited to these.

[0087] In embodiments, the molar ratio of the first ligand to the second ligand can range from about 0.3:1 to about 0.8:1. When the molar ratio of the first ligand to the second ligand is within this range, the lightfastness of the quantum dot complex can be improved. In embodiments, the quantum dots can have a core-shell structure comprising a core containing a semiconductor compound and a shell containing a semiconductor compound.

[0088] In implementation, quantum dots may include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or combinations thereof.

[0089] Examples of group II-VI semiconductor compounds may include: binary compounds, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS; ternary compounds, such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, or MgZnS; quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe; or combinations thereof.

[0090] Examples of Group III-V semiconductor compounds may include: binary compounds, such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and InSb; ternary compounds, such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and InPSb; quaternary compounds, such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; or any combination thereof. In embodiments, the Group III-V semiconductor compounds may further include Group II elements. Examples of group III-V semiconductor compounds that further include group II elements may include InZnP, InGaZnP, InAlZnP, etc.

[0091] Examples of group III-VI semiconductor compounds may include: binary compounds, such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, or InTe; ternary compounds, such as InGaS3 or InGaSe3; or combinations thereof.

[0092] Examples of group I-III-VI semiconductor compounds may include: ternary compounds, such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, or AgAlO2; quaternary compounds, such as AgInGaS or AgInGaS2; or combinations thereof.

[0093] Examples of group IV-VI semiconductor compounds may include: binary compounds, such as SnS, SnSe, SnTe, PbS, PbSe, or PbTe; ternary compounds, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; quaternary compounds, such as SnPbSSe, SnPbSeTe, or SnPbSTe; or combinations thereof.

[0094] Examples of Group IV elements or compounds may include: single-element materials, such as Si or Ge; binary compounds, such as SiC or SiGe; or combinations thereof.

[0095] Each element in a compound, such as a binary, ternary, or quaternary compound, may exist in the particles at a uniform or non-uniform concentration.

[0096] In embodiments, examples of semiconductor compounds included in the shell may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or combinations thereof.

[0097] In some embodiments, the quantum dot may include a copper indium gallium sulfide (CIGS) core and a ZnS or GaS shell.

[0098] In implementation, quantum dots may be in the form of spherical particles, cone particles, multi-armed particles, cubic nanoparticles, nanotube particles, nanowire particles, nanofiber particles, or nanoplate particles.

[0099] Because the band gap can be controlled by adjusting the size of the quantum dots, light-emitting devices that emit light of various wavelengths can be implemented by using quantum dots of different sizes. For example, the size of the quantum dots can be selected to emit red or green light. In one embodiment, the size of the quantum dots can be configured to emit white light through a combination of various colors of light.

[0100] [Quantum dot composition]

[0101] According to an embodiment, the quantum dot composition may include a quantum dot complex.

[0102] In some embodiments, the quantum dot composition may include a quantum dot complex, a crosslinkable monomer, and an initiator.

[0103] Crosslinkable monomers may be, for example, acrylic monomers. Crosslinkable monomers may include, for example, 1,6-hexanediol diacrylate, 2-ethylhexyl(meth)acrylate, ethyl(meth)acrylate, methyl(meth)acrylate, n-propyl(meth)acrylate, isopropyl(meth)acrylate, pentyl(meth)acrylate, n-octyl(meth)acrylate, isooctyl(meth)acrylate, isononyl(meth)acrylate, n-butyl(meth)acrylate, isobutyl(meth)acrylate, n-hexyl(meth)acrylate, n-nonyl(meth)acrylate, isopentyl(meth)acrylate, n-decyl(meth)acrylate, isodecanyl(meth)acrylate, dodecyl(meth)acrylate, isobornyl(meth)acrylate, cyclohexyl(meth)acrylate, phenyl(meth)acrylate, benzyl(meth)acrylate, isostearyl(meth)acrylate, 2-methylbutyl(meth)acrylate, or combinations thereof.

[0104] Initiators may include, for example, diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide, 4-acryloyloxybenzophenone, 2,2-dimethoxy-2-phenylacetophenone, 2-hydroxy-2-methyl-1-phenyl-1-prop-1-one, ethyl(2,4,6-trimethylbenzoyl)phenylphosphine ester, bisacylphosphine oxide, or combinations thereof.

[0105] In embodiments, in addition to crosslinkable monomers and initiators, the quantum dot composition may further include additives. Additives may include, for example, materials for increasing the photostability, thermal stability, or storage stability of the quantum dot composite. Additives may include, for example, ultraviolet (UV) stabilizers, thermal stabilizers, or reaction inhibitors.

[0106] In some embodiments, the quantum dot composition may include a quantum dot composite and a solvent.

[0107] In this embodiment, the solvent may be hydrophobic or hydrophilic.

[0108] In embodiments, the hydrophobic solvent may include at least one of an aliphatic hydrocarbon system and an aromatic hydrocarbon system.

[0109] For example, hydrophobic solvents may include at least one of the following: alkanes, such as n-pentane, n-hexane, n-heptane, n-octane, n-nonane, n-decane, dodecane, hexadecane, and oxane; haloalkanes, such as dichloromethane, 1,2-dichloroethane, and 1,1,2-trichloroethane; cycloalkanes, such as cyclohexane, methylcyclohexane, etc.; aromatic hydrocarbons, such as toluene, xylene, mesitylene, ethylbenzene, n-hexylbenzene, cyclohexylbenzene, trimethylbenzene, and tetrahydronaphthalene; and aryl halides, such as chlorobenzene, o-dichlorobenzene, and p-dichlorobenzene.

[0110] In embodiments, the hydrophilic solvent may include at least one of alcohol, ether, ketone and ester groups.

[0111] For example, the hydrophilic solvent may include at least one of the following: alkylene glycol alkyl ethers, such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, and propylene glycol methyl ethyl ether; diethylene glycol dialkyl ethers, such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, and diethylene glycol dibutyl ether; alkylene glycol alkyl ether acetates, such as ethylene glycol methyl ether acetate, ethylene glycol ethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and propylene glycol monoethyl ether acetate. Alcohol monopropyl ether acetate; alkoxyalkyl acetate, such as methoxybutyl acetate and methoxypentyl acetate; aromatic hydrocarbons, such as benzene, toluene, xylene and mesitylene; ketones, such as methyl ethyl ketone, acetone, methyl pentyl ketone, methyl isobutyl ketone and cyclohexanone; alcohols, such as ethanol, propanol, butanol, hexanol, cyclohexanol, ethylene glycol and glycerol; esters, such as ethyl 3-ethoxypropionate, methyl 3-methoxypropionate and ethyl 3-phenylpropionate; cyclic esters, such as γ-butyrolactone; and methoxybenzene (anisole).

[0112] In embodiments, the viscosity (@25°C) of the quantum dot composition can range from about 2 cP to about 30 cP.

[0113] When the viscosity is within this range, the quantum dot composition according to the embodiments may be suitable for forming a layer using solution processes (e.g., by spin coating or inkjet printing).

[0114] [Light-emitting device]

[0115] [ Figure 1 [Description]

[0116] Figure 1 This is a schematic cross-sectional view of the light-emitting device 10 according to an embodiment. The light-emitting device 10 may include a first electrode 110, a sandwich layer 130, and a second electrode 150.

[0117] The following text will refer to Figure 1 The structure and manufacturing method of the light-emitting device 10 according to the embodiment are described.

[0118] [First Electrode 110]

[0119] exist Figure 1 The substrate may be further included below the first electrode 110 or on the second electrode 150. The substrate may be a glass substrate or a plastic substrate. In embodiments, the substrate may be a flexible substrate and may include plastics with excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0120] The first electrode 110 can be formed, for example, by depositing or sputtering a material for forming the first electrode 110 on a substrate. When the first electrode 110 is an anode, the material for forming the first electrode 110 can be a high work function material that facilitates hole injection.

[0121] The first electrode 110 may be a reflective electrode, a transmissive-reflective electrode, or a transmissive electrode. When the first electrode 110 is a transmissive electrode, the material used to form the first electrode 110 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In embodiments, when the first electrode 110 is a transmissive-reflective electrode or a reflective electrode, the material used to form the first electrode 110 may include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0122] The first electrode 110 may have a structure consisting of a single layer or a structure comprising multiple layers. In an embodiment, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0123] [Mezzanine 130]

[0124] The interlayer 130 may be disposed above the first electrode 110. The interlayer 130 may include an emission layer.

[0125] The interlayer 130 may further include a hole transport region between the first electrode 110 and the emitter layer and an electron transport region between the emitter layer and the second electrode 150.

[0126] In addition to various organic materials, the interlayer 130 may further include metal compounds (such as organometallic compounds) or inorganic materials (such as quantum dots).

[0127] In an embodiment, the interlayer 130 may include two or more emitting units stacked between the first electrode 110 and the second electrode 150, and at least one charge generating layer between adjacent units in the two or more emitting units. When the interlayer 130 includes two or more emitting units and at least one charge generating layer as described above, the light-emitting device 10 may be a series light-emitting device.

[0128] [Hole transport region in interlayer 130]

[0129] Hole transport regions can have a structure consisting of layers (composed of a single material), a structure consisting of layers comprising different materials, or a structure comprising multiple layers (comprising different materials).

[0130] The hole transport region may include a hole injection layer, a hole transport layer, an emission assist layer, an electron blocking layer, or any combination thereof.

[0131] In an embodiment, the hole transport region may have a multi-layer structure, including a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission auxiliary layer structure, a hole injection layer / emission auxiliary layer structure, a hole transport layer / emission auxiliary layer structure, or a hole injection layer / hole transport layer / electron blocking layer structure, wherein the layers of each structure may be stacked from the first electrode 110 in the order described therein, but the structure of the hole transport region is not limited to this.

[0132] In an implementation, the hole transport region may include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:

[0133] [Formula 201]

[0134]

[0135] [Formula 202]

[0136] .

[0137] In equations 201 and 202,

[0138] L 201 To L 204 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic group,

[0139] L 205 It can be *-O-*', *-S-*', or *-N(Q) 201 )-*', unsubstituted or by at least one R 10a Replacement C1-C 20 Alkylene, unsubstituted, or with at least one R 10a Replacement C2-C 20 alkenyl, unsubstituted, or with at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic group,

[0140] xa1 to xa4 can each be an integer selected from 0 to 5 independently.

[0141] xa5 can be an integer selected from 1 to 10.

[0142] R 201 To R204 and Q 201 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic group,

[0143] R 201 and R 202 Optionally via a single bond, unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups are linked together to form an unsubstituted or substituted compound with at least one R group. 10a Replacement C8-C 60 Polycyclic groups (e.g., carbazole group) (e.g., see compound HT16),

[0144] R 203 and R 204 Optionally via a single bond, unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups are linked together to form an unsubstituted or substituted compound with at least one R group. 10a Replacement C8-C 60 Polycyclic groups, and

[0145] na1 can be an integer selected from 1 to 4.

[0146] In embodiments, the compound represented by formula 201 and the compound represented by formula 202 may each independently include at least one of the groups represented by formulas CY201 to CY217:

[0147] .

[0148] In equations CY201 to CY217, R 10b and R 10c Each can be independently compared with reference R. 10a The descriptions are the same, CY ring 201 To CY 204 Each can be independently C3-C 20 Carbocyclic or C1-C 20 Heterocyclic group, and at least one hydrogen in formulas CY201 to CY217 may be unsubstituted or R as described herein. 10a replace.

[0149] In the implementation, in formulas CY201 to CY217, the ring CY201 To CY 204 Each can be independently phenyl, naphthyl, phenanthryl or anthracene.

[0150] In embodiments, the compound represented by formula 201 and the compound represented by formula 202 may each independently include at least one of the groups represented by formulas CY201 to CY203.

[0151] In an embodiment, the compound represented by formula 201 may include at least one of the groups represented by formulas CY201 to CY203 and at least one of the groups represented by formulas CY204 to CY217.

[0152] In the implementation, in formula 201, xa1 can be 1, R 201 It can be a group represented by one of the formulas CY201 to CY203, xa2 can be 0, and R 202 It can be a group represented by one of the formulas CY204 to CY207.

[0153] In an embodiment, the compound represented by formula 201 and the compound represented by formula 202 may each not include the groups represented by formulas CY201 to CY203.

[0154] In an embodiment, the compound represented by formula 201 and the compound represented by formula 202 may each not include the groups represented by formulas CY201 to CY203, and may each independently include at least one of the groups represented by formulas CY204 to CY217.

[0155] In embodiments, the compounds represented by formula 201 and the compounds represented by formula 202 may each not include the groups represented by formulas CY201 to CY217.

[0156] In embodiments, the hole transport region may include one of compounds HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiroTPD, spiroNPB, methylated NPB, TAPC, HMTPD, 4,4',4''-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), or any combination thereof:

[0157]

[0158]

[0159]

[0160]

[0161]

[0162]

[0163]

[0164]

[0165]

[0166]

[0167]

[0168]

[0169]

[0170]

[0171]

[0172]

[0173]

[0174]

[0175] .

[0176] The thickness of the hole transport region can range from about 50 Å to about 10,000 Å. For example, the thickness of the hole transport region can range from about 100 Å to about 4,000 Å. When the hole transport region includes a hole injection layer, a hole transport layer, or a combination thereof, the thickness of the hole injection layer can range from about 50 Å to about 9,000 Å, and the thickness of the hole transport layer can range from about 50 Å to about 2,000 Å. For example, the thickness of the hole injection layer can range from about 100 Å to about 1,000 Å. For example, the thickness of the hole transport layer can range from about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within the above ranges, satisfactory hole transport characteristics can be obtained without significantly increasing the driving voltage.

[0177] The emission assist layer can increase luminous efficiency by compensating for the optical resonant distance of the wavelength of light emitted by the emission layer, and the electron blocking layer can block the leakage of electrons from the emission layer to the hole transport region. Materials that may be included in the hole transport region may be included in both the emission assist layer and the electron blocking layer.

[0178] [p-dopant]

[0179] In addition to these materials, the hole transport region may further include charge-generating materials for improving conduction properties. The charge-generating materials may be (e.g., in the form of a single layer composed of charge-generating materials) uniformly or non-uniformly dispersed in the hole transport region.

[0180] The charge-generating material can be, for example, a p-doped agent.

[0181] For example, the lowest unoccupied molecular orbital (LUMO) level of a p-doped agent can be equal to or less than about -3.5 eV.

[0182] In embodiments, p-dopersive agents may include quinone derivatives, cyano-containing compounds, compounds comprising elements EL1 and EL2, or combinations thereof.

[0183] Examples of quinone derivatives may include TCNQ and F4-TCNQ.

[0184] Examples of cyano-containing compounds may include HAT-CN and compounds represented by formula 221:

[0185]

[0186] [Equation 221]

[0187] .

[0188] In Equation 221,

[0189] R 221 To R 223 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups, and

[0190] R 221 To R 223 At least one of them can be independently replaced by C3-C respectively. 60 Carbocyclic or C1-C 60Heterocyclic groups: cyano; -F; -Cl; -Br; -I; C1-C substituted with cyano, -F, -Cl, -Br, -I or any combination thereof 20 Alkyl groups; or combinations thereof.

[0191] In a compound that includes elements EL1 and EL2, element EL1 may be a metal, a metalloid, or a combination thereof, and element EL2 may be a nonmetal, a metalloid, or a combination thereof.

[0192] Examples of metals may include: alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt. (Co, Rhodium (Rh), Iridium (Ir), Nickel (Ni), Palladium (Pd), Platinum (Pt), Copper (Cu), Silver (Ag), Gold (Au), etc.); Post-transition metals (e.g., Zinc (Zn), Indium (In), Tin (Sn), etc.); and Lanthanides (e.g., Lanthanum (La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Lutetium (Lu), etc.).

[0193] Examples of metalloids may include silicon (Si), antimony (Sb), and tellurium (Te).

[0194] Examples of nonmetals may include oxygen (O) and halogens (e.g., F, Cl, Br, I, etc.).

[0195] Examples of compounds including elements EL1 and EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), quasi-metal halides (e.g., quasi-metal fluorides, quasi-metal chlorides, quasi-metal bromides, quasi-metal iodides, etc.), metal tellurides, or combinations thereof.

[0196] Examples of metal oxides may include tungsten oxides (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxides (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxides (e.g., MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.) and rhenium oxides (e.g., ReO3, etc.).

[0197] Examples of metal halides may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, and lanthanide metal halides.

[0198] Examples of alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, and CsI.

[0199] Examples of alkaline earth metal halides may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, and BaI2.

[0200] Examples of transition metal halides may include titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), and tantalum halides (e.g., TaF3, TaCl3, Ta...). Br3, TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReBr...). 2. ReI2, etc.), iron halides (e.g., FeF2, FeCl2, FeBr2, FeI2, etc.), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2, etc.), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2, etc.), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2, etc.), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2, etc.), iridium halides (e.g., IrF2, IrCl2, Ir... Nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2), palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2), platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2), copper halides (e.g., CuF, CuCl, CuBr, CuI), silver halides (e.g., AgF, AgCl, AgBr, AgI), and gold halides (e.g., AuF, AuCl, AuBr, AuI).

[0201] Examples of post-transition metal halides may include zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (e.g., InI3, etc.) and tin halides (e.g., SnI2, etc.).

[0202] Examples of lanthanide metal halides may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, and SmI3.

[0203] Examples of quasi-metal halides may include antimony halides (e.g., SbCl5, etc.).

[0204] Examples of metal tellurides may include alkali metal tellurides (e.g., Li₂Te, Na₂Te, K₂Te, Rb₂Te, Cs₂Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), and transition metal tellurides (e.g., TiTe₂, ZrTe₂, HfTe₂, V₂Te₃, Nb₂Te₃, Ta₂Te₃, Cr₂Te₃, Mo₂Te₃, W₂Te₃, MnTe, TcTe, ReTe, F₂Te, etc.). (eTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.) and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.).

[0205] [Emitting layer in interlayer 130]

[0206] When the light-emitting device 10 is a full-color light-emitting device, the emitting layer can be patterned as a red emitting layer, a green emitting layer, and / or a blue emitting layer according to the sub-pixels. In an embodiment, the emitting layer may have a stacked structure of two or more layers selected from the red, green, and blue emitting layers, wherein the two or more layers may be in contact with each other or may be separated from each other to emit white light. In an embodiment, the emitting layer may include two or more materials selected from the red, green, and blue emitting materials, wherein the two or more materials may be mixed with each other in a single layer to emit white light.

[0207] The emitting layer may include a host and a dopant. The dopant may include phosphorescent dopant, fluorescent dopant, or any combination thereof.

[0208] Based on 100 parts by weight of the host, the amount of dopant in the emitter layer can range from about 0.01 parts by weight to about 15 parts by weight.

[0209] In an implementation, the emission layer may include the aforementioned quantum dot composite (hereinafter also referred to as "quantum dot").

[0210] In one embodiment, the emission layer may include a delayed fluorescence material. The delayed fluorescence material may be used as a host or dopant in the emission layer.

[0211] The thickness of the emitting layer can range from about 100 Å to about 1,000 Å. For example, the thickness of the emitting layer can range from about 200 Å to about 600 Å. When the thickness of the emitting layer is within any of the above ranges, excellent light emission characteristics can be obtained without significantly increasing the driving voltage.

[0212] [Quantum dot]

[0213] The emission layer may include quantum dots.

[0214] In the specification, quantum dots can be crystals of semiconductor compounds and can include any material capable of emitting light of various wavelengths depending on the size of the crystal. Quantum dots can emit light of various wavelengths by adjusting the proportions of elements in the quantum dot compound.

[0215] The diameter of a quantum dot can range, for example, from about 1 nm to about 10 nm.

[0216] Quantum dots can be synthesized through wet chemical processes, metal-organic chemical vapor deposition, molecular beam epitaxy, or any similar process.

[0217] Wet chemistry processes involve mixing precursor materials with organic solvents and growing quantum dot crystals. During crystal growth, the organic solvent naturally acts as a dispersant on the surface of the quantum dot crystals and controls their growth. Consequently, the growth of quantum dot particles can be controlled through processes that are less costly and easier to perform than vapor deposition methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

[0218] Quantum dots may include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or combinations thereof.

[0219] Examples of group II-VI semiconductor compounds may include: binary compounds, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS; ternary compounds, such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, or MgZnS; quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe; or combinations thereof.

[0220] Examples of Group III-V semiconductor compounds may include: binary compounds, such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and InSb; ternary compounds, such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and InPSb; quaternary compounds, such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; or combinations thereof. In embodiments, the Group III-V semiconductor compounds may further include Group II elements. Examples of group III-V semiconductor compounds that further include group II elements may include InZnP, InGaZnP, InAlZnP, etc.

[0221] Examples of group III-VI semiconductor compounds may include: binary compounds, such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, or InTe; ternary compounds, such as InGaS3 or InGaSe3; or combinations thereof.

[0222] Examples of group I-III-VI semiconductor compounds may include: ternary compounds, such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, or AgAlO2; quaternary compounds, such as AgInGaS or AgInGaS2; or combinations thereof.

[0223] Examples of group IV-VI semiconductor compounds may include: binary compounds, such as SnS, SnSe, SnTe, PbS, PbSe, or PbTe; ternary compounds, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; quaternary compounds, such as SnPbSSe, SnPbSeTe, or SnPbSTe; or combinations thereof.

[0224] Examples of Group IV elements or compounds may include: single-element materials, such as Si or Ge; binary compounds, such as SiC or SiGe; or combinations thereof.

[0225] Each element in a compound, such as a binary, ternary, or quaternary compound, may exist in the quantum dot particles in a uniform or non-uniform concentration.

[0226] In implementations, quantum dots may have a single structure in which the concentration of each element in the quantum dot is uniform, or quantum dots may have a core-shell structure. For example, the materials included in the core and the materials included in the shell may be different from each other.

[0227] The shell of a quantum dot can serve as a protective layer to prevent chemical denaturation of the nucleus and maintain its semiconductor properties, and / or as a charge layer to impart electrophoretic properties to the quantum dot. The shell can be a single layer or multiple layers. The interface between the nucleus and the shell can have a concentration gradient, where the concentration of elements present in the shell decreases towards the nucleus.

[0228] The shell of a quantum dot can include metal oxides, quasi-metal oxides, non-metal oxides, semiconductor compounds, or combinations thereof. Examples of metal oxides, quasi-metal oxides, or non-metal oxides can include: binary compounds, such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO; ternary compounds, such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4; or combinations thereof.

[0229] Examples of semiconductor compounds described herein may include: Group II-VI semiconductor compounds; Group III-V semiconductor compounds; Group III-VI semiconductor compounds; Group I-III-VI semiconductor compounds; Group IV-VI semiconductor compounds; and combinations thereof. For example, semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or combinations thereof.

[0230] The full width at half maximum (FWHM) of the emission spectrum of quantum dots can be equal to or less than about 45 nm. For example, the FWHM of the emission spectrum of quantum dots can be equal to or less than about 40 nm. For example, the FWHM of the emission spectrum of quantum dots can be equal to or less than about 30 nm. Within any of these ranges, color purity or color reproducibility can be improved. Light emitted by quantum dots can be emitted in all directions to improve wide viewing angles.

[0231] In implementation, quantum dots may be in the form of spherical particles, cone particles, multi-armed particles, cubic nanoparticles, nanotube particles, nanowire particles, nanofiber particles, or nanoplate particles.

[0232] Because the band gap can be tuned by controlling the size of the quantum dots, light with various wavelength bands can be obtained from the quantum dot emitting layer. Accordingly, by using quantum dots of different sizes, light-emitting devices that emit light of various wavelengths can be implemented. In one embodiment, the size of the quantum dots can be adjusted to emit red, green, and / or blue light. In another embodiment, the size of the quantum dots can be configured to emit white light through a combination of various colors of light.

[0233] [Electron transport region in interlayer 130]

[0234] The electron transport region may have a structure consisting of layers (composed of a single material), a structure consisting of layers including different materials, or a structure including multiple layers (including different materials).

[0235] The electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or a combination thereof.

[0236] In an implementation, the electron transport region may have a structure including an electron transport layer / electron injection layer structure or a hole blocking layer / electron transport layer / electron injection layer structure, wherein the layers of each structure may be stacked from the emission layer in the order described herein, but the structure of the electron transport region is not limited thereto.

[0237] The electron transport region (e.g., a hole-blocking layer or electron transport layer within the electron transport region) may include a metal-free compound comprising at least one π-electron-deficient nitrogen-containing C1-C. 60 Cyclic groups.

[0238] In an embodiment, the electron transport region may include a compound represented by formula 601:

[0239] [Formula 601]

[0240] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21 .

[0241] In Equation 601,

[0242] Ar 601 and L 601 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic group,

[0243] xe11 can be 1, 2, or 3.

[0244] xe1 can be 0, 1, 2, 3, 4, or 5.

[0245] R 601 It can be unsubstituted or by at least one R 10a Replacement C3-C 60 Carbocyclic group, unsubstituted with at least one R 10a Or replace C1-C 60 Heterocyclic groups, -Si(Q) 601 (Q) 602 (Q) 603 -C(=O)(Q) 601 -S(=O)2(Q) 601 ) or -P(=O)(Q 601 (Q) 602 ),

[0246] Q 601 To Q 603 Each can be independently identical to the description in reference Q1.

[0247] xe21 can be 1, 2, 3, 4, or 5, and

[0248] Ar 601 L601 and R 601 At least one of them can be independently unsubstituted or by at least one R. 10a Substituted π-electron-deficient nitrogen-containing C1-C 60 Cyclic groups.

[0249] In an implementation, in formula 601, when xe11 is 2 or greater, two or more Ar 601 They can be connected together with a single key.

[0250] In the implementation, in formula 601, Ar 601 It can be a substituted or unsubstituted anthracene group.

[0251] In an embodiment, the electron transport region may include a compound represented by formula 601-1:

[0252] [Formula 601-1]

[0253] .

[0254] In Equation 601-1,

[0255] X 614 It can be N or C(R) 614 ), X 615 It can be N or C(R) 615 ), X 616 It can be N or C(R) 616 ), and X 614 To X 616 At least one of them can be N,

[0256] L 611 To L 613 Each can be independently compared with reference L 601 The descriptions are the same.

[0257] xe611 to xe613 can each be independently identical to the description with reference to xe1.

[0258] R 611 To R 613 Each can be independently compared with reference R. 601 The descriptions are the same, and

[0259] R 614 To R 616 Each can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 20 Alkyl, C1-C 20 Alkyl, unsubstituted, or with at least one R 10a Replacement C3-C 60The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic group.

[0260] In the implementation, in formulas 601 and 601-1, xe1 and xe611 to xe613 can each be 0, 1 or 2 independently.

[0261] In embodiments, the electron transport region may include one of compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:

[0262]

[0263]

[0264]

[0265]

[0266]

[0267]

[0268]

[0269]

[0270]

[0271]

[0272]

[0273]

[0274] .

[0275] The thickness of the electron transport region can range from about 100 Å to about 5,000 Å. For example, the thickness of the electron transport region can range from about 160 Å to about 4,000 Å. When the electron transport region includes a hole blocking layer, an electron transport layer, or a combination thereof, the thickness of the hole blocking layer can range from about 20 Å to about 1,000 Å, and the thickness of the electron transport layer can range from about 100 Å to about 1,000 Å. For example, the thickness of the hole blocking layer can range from about 30 Å to about 300 Å. For example, the thickness of the electron transport layer can range from about 150 Å to about 500 Å. When the thicknesses of the hole blocking layer, the electron transport layer, and / or the electron transport region are within the above ranges, satisfactory electron transport characteristics can be obtained without significantly increasing the driving voltage.

[0276] In addition to the materials mentioned above, the electron transport region (e.g., the electron transport layer in the electron transport region) may further include metallic materials.

[0277] Metal-containing materials may include alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The metal ions in alkali metal complexes may be Li ions, Na ions, K ions, Rb ions, or Cs ions, and the metal ions in alkaline earth metal complexes may be Be ions, Mg ions, Ca ions, Sr ions, or Ba ions.

[0278] The ligands coordinated to the metal ions of alkali metal complexes or alkaline earth metal complexes may independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthridine, cyclopentadiene, or any combination thereof.

[0279] In this embodiment, the metal-containing material may include a Li complex. The Li complex may include, for example, compound ET-D1 (LiQ) or compound ET-D2:

[0280] .

[0281] The electron transport region may include an electron injection layer that facilitates the injection of electrons from the second electrode 150. The electron injection layer may be in direct contact with the second electrode 150.

[0282] The electron injection layer can have a structure consisting of layers (composed of a single material), a structure consisting of layers including different materials, or a structure including multiple layers (including different materials).

[0283] The electron injection layer may include alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof.

[0284] The alkali metals may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metals may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metals may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0285] The alkali metal compounds, alkaline earth metal compounds, and rare earth metal compounds may include oxides of alkali metals, alkaline earth metals, and rare earth metals, halides (e.g., fluorides, chlorides, bromides, iodides, etc.), or tellurides, or any combination thereof.

[0286] The alkali metal compounds may include: alkali metal oxides, such as Li2O, Cs2O, or K2O; alkali metal halides, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, or KI; or any combination thereof. The alkaline earth metal compounds may include alkaline earth metal oxides, such as BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying 0 < x < 1) or Ba x Ca 1-x O (where x is a real number satisfying 0 < x < 1). The rare earth metal compounds may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In an embodiment, the rare earth metal compounds may include lanthanide metal tellurides. Examples of lanthanide metal tellurides may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, and Lu2Te3.

[0287] The alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes may include: alkali metal ions, alkaline earth metal ions, or rare earth metal ions; and ligands bonded to the metal ions (e.g., hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof).

[0288] In embodiments, the electron injection layer may consist of alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof as described above. In embodiments, the electron injection layer may further comprise organic materials (e.g., compounds represented by Formula 601).

[0289] In embodiments, the electron-injected layer may be composed of an alkali metal compound (e.g., an alkali metal halide); or the electron-injected layer may be composed of an alkali metal compound (e.g., an alkali metal halide) and alkali metals, alkaline earth metals, rare earth metals, or combinations thereof. For example, the electron-injected layer may be a KI:Yb co-deposition layer or an RbI:Yb co-deposition layer, etc.

[0290] When the electron injection layer further includes organic materials, alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof may be uniformly or non-uniformly dispersed in the matrix including the organic materials.

[0291] The thickness of the electron injection layer can range from about 1 Å to about 100 Å. For example, the thickness of the electron injection layer can range from about 3 Å to about 90 Å. When the thickness of the electron injection layer is within any of the above ranges, satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0292] [Second electrode 150]

[0293] The second electrode 150 is disposed on the interlayer 130. The second electrode 150 may be a cathode serving as an electron injection electrode. When the second electrode 150 is a cathode, the material used to form the second electrode 150 may include a material having a low work function, such as a metal, alloy, conductive compound, or any combination thereof.

[0294] The second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 150 may be a transmission electrode, a transmission-reflection electrode, or a reflection electrode.

[0295] The second electrode 150 may have a single-layer structure or a multi-layer structure.

[0296] [Capping layer]

[0297] The light-emitting device 10 may include a first capping layer disposed outside the first electrode 110 and / or a second capping layer disposed outside the second electrode 150. In an embodiment, the light-emitting device 10 may have a structure in which the first capping layer, the first electrode 110, the interlayer 130, and the second electrode 150 are stacked in the described order, or in a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are stacked in the described order, or in a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are stacked in the described order.

[0298] Light generated in the emitting layer of the interlayer 130 of the light-emitting device 10 can be extracted to the outside through a first electrode 110, which can serve as a transmissive or reflective electrode, and through a first capping layer. Light generated in the emitting layer of the interlayer 130 of the light-emitting device 10 can be extracted to the outside through a second electrode 150, which can serve as a transmissive or reflective electrode, and through a second capping layer.

[0299] The first and second capping layers can each increase the external emission efficiency based on the principle of constructive interference. Accordingly, the light extraction efficiency of the light-emitting device 10 can be increased, thereby improving the luminous efficiency of the light-emitting device 10.

[0300] The first capping layer and the second capping layer may each comprise a material having a refractive index equal to or greater than about 1.6 (relative to a wavelength of about 589 nm).

[0301] The first capping layer and the second capping layer can each be independently an organic capping layer including organic materials, an inorganic capping layer including inorganic materials, or an organic-inorganic composite capping layer including both organic and inorganic materials.

[0302] At least one of the first and second capping layers may independently comprise a carbocyclic compound, a heterocyclic compound, an amino-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthyl phthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, heterocyclic compound, and amino-containing compound may optionally be substituted with substituents including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof.

[0303] In an embodiment, at least one of the first capping layer and the second capping layer may each independently include an amine-containing compound.

[0304] In an embodiment, at least one of the first capping layer and the second capping layer may each independently comprise a compound represented by formula 201, a compound represented by formula 202, or any combination thereof.

[0305] In an embodiment, at least one of the first capping layer and the second capping layer may each independently comprise one of compounds HT28 to HT33, one of compounds CP1 to CP6, β-NPB, or any combination thereof:

[0306]

[0307] .

[0308] [Electronic Devices]

[0309] Light-emitting devices can be included in various electronic devices. For example, electronic devices that include light-emitting devices can be light-emitting devices or authentication devices, etc.

[0310] In addition to the light-emitting device, the electronic device (e.g., the light-emitting device) may further include a color filter, a color conversion layer, or a color filter and a color conversion layer. The color filter and / or the color conversion layer may be disposed in at least one direction of travel of the light emitted from the light-emitting device. For example, the light emitted from the light-emitting device may be blue light or white light. Further description of the light-emitting device may be the same as described above.

[0311] An electronic device may include a substrate. The substrate may include sub-pixels, color filters may include color filter areas corresponding to the sub-pixels, and color conversion layers may include color conversion areas corresponding to the sub-pixels.

[0312] Pixel delimiting layers can be set between subpixels to delimit each subpixel.

[0313] The color filter may further include a color filter area and a light-blocking pattern disposed between the color filter areas, and the color conversion layer may further include a color conversion area and a light-blocking pattern disposed between the color conversion areas.

[0314] The color filter region (or color conversion region) may include a first region emitting a first color light, a second region emitting a second color light, and / or a third region emitting a third color light, and the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In embodiments, the color filter region (or color conversion region) may include quantum dots. For example, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. Further description of quantum dots may be the same as described herein. The first region, the second region, and / or the third region may each further include a scatterer.

[0315] The region including quantum dots can be formed using a quantum dot composition including a quantum dot complex, depending on the implementation method.

[0316] In one embodiment, the light-emitting device can emit first light, a first region can absorb the first light to emit first-first-color light, a second region can absorb the first light to emit second-first-color light, and a third region can absorb the first light to emit third-first-color light. The first-first-color light, the second-first-color light, and the third-first-color light can have different maximum emission wavelengths. For example, the first light can be blue light, the first-first-color light can be red light, the second-first-color light can be green light, and the third-first-color light can be blue light.

[0317] In addition to the light-emitting device described above, the electronic device may further include a thin-film transistor (TFT). The thin-film transistor may include a source electrode, a drain electrode, and an active layer, wherein either the source electrode or the drain electrode may be electrically connected to either the first electrode or the second electrode of the light-emitting device.

[0318] TFTs may further include gate electrodes and gate insulating films, etc.

[0319] The active layer may include crystalline silicon, amorphous silicon, organic semiconductors, or oxide semiconductors, etc.

[0320] The electronic device may further include an encapsulation portion that seals the light-emitting device. The encapsulation portion may be disposed between the color filter and / or color conversion layer and the light-emitting device. The encapsulation portion allows light from the light-emitting device to be emitted to the outside while simultaneously preventing ambient air and moisture from penetrating into the light-emitting device. The encapsulation portion may be an encapsulation substrate comprising a transparent glass substrate or a plastic substrate. The encapsulation portion may be a thin-film encapsulation layer comprising at least one of an organic layer and / or an inorganic layer. When the encapsulation portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0321] In addition to color filters and / or color conversion layers, various functional layers may be further included on the package, depending on the application of the electronic device. Examples of functional layers may include a touchscreen layer and a polarization layer. The touchscreen layer may be a resistive touchscreen layer, a capacitive touchscreen layer, or an infrared touchscreen layer. The authentication device may be, for example, a biometric authentication device that authenticates an individual using biometric information from a living body (e.g., fingertip, pupil, etc.).

[0322] In addition to the aforementioned light-emitting device, the authentication device may further include a biometric information collection unit.

[0323] Electronic devices can be used in a variety of displays, light sources, illuminators, personal computers (e.g., laptop computers), mobile phones, digital cameras, electronic notebook computers, electronic dictionaries, video game consoles, medical devices (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram display devices, ultrasound diagnostic devices, or endoscopic display devices), fish finders, various measuring devices, instruments (e.g., instruments for vehicles, airplanes, or ships), or projectors, etc.

[0324] [ Figure 2 and Figure 3 [Description]

[0325] Figure 2 This is a schematic cross-sectional view of an electronic device according to an embodiment.

[0326] Figure 2 The electronic device may include a substrate 100, a thin-film transistor (TFT), a light-emitting device, and a package 300 that seals the light-emitting device.

[0327] The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be disposed on the substrate 100. The buffer layer 210 can prevent the penetration of impurities through the substrate 100 and can provide a flat surface on the substrate 100.

[0328] The TFT may be disposed on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0329] The active layer 220 may include inorganic semiconductors (such as silicon or polysilicon), organic semiconductors or oxide semiconductors, and may include source regions, drain regions and channel regions.

[0330] The gate insulating film 230 may be disposed on the active layer 220 so that the active layer 220 is insulated from the gate electrode 240, and the gate electrode 240 may be disposed on the gate insulating film 230.

[0331] The interlayer insulating film 250 may be disposed on the gate electrode 240. The interlayer insulating film 250 may be disposed between the gate electrode 240 and the source electrode 260 and between the gate electrode 240 and the drain electrode 270, so as to insulate the gate electrode 240 from the source electrode 260 and from the drain electrode 270.

[0332] The source electrode 260 and the drain electrode 270 may be disposed on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source region and drain region of the active layer 220, and the source electrode 260 and the drain electrode 270 may respectively contact the exposed portions of the source region and drain region of the active layer 220.

[0333] The TFT can be electrically connected to a light-emitting device to drive the light-emitting device, and can be covered and protected by a passivation layer 280. The passivation layer 280 may include an inorganic insulating layer, an organic insulating layer, or a combination thereof. The light-emitting device may be provided on the passivation layer 280. The light-emitting device may include a first electrode 110, a sandwich layer 130, and a second electrode 150.

[0334] The first electrode 110 may be disposed on the passivation layer 280. The passivation layer 280 may not completely cover the drain electrode 270 and may expose a region of the drain electrode 270. The first electrode 110 may be configured to be connected (e.g., electrically connected) to the exposed region of the drain electrode 270.

[0335] A pixel defining film 290, including insulating material, may be disposed on the first electrode 110. The pixel defining film 290 may expose an area of ​​the first electrode 110, and an interlayer 130 may be formed on the exposed area of ​​the first electrode 110. The pixel defining film 290 may be a polyimide organic film or a polyacrylic acid organic film. Although in Figure 2 Not explained in the text, but at least a portion of the interlayer 130 may extend to the upper part of the pixel defining film 290, provided in the form of a common layer.

[0336] The second electrode 150 may be disposed on the interlayer 130, and the capping layer 170 may be further included on the second electrode 150. The capping layer 170 may be formed to cover the second electrode 150.

[0337] The encapsulation portion 300 may be disposed on the capping layer 170. The encapsulation portion 300 may be disposed on the light-emitting device to protect the light-emitting device from moisture and / or oxygen. The encapsulation portion 300 may include: an inorganic film, including silicon nitride (SiN). x ), silicon dioxide (SiO) x Indium tin oxide, indium zinc oxide, or combinations thereof; organic membranes, including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate or polyacrylic acid), epoxy resins (e.g., aliphatic glycidyl ether (AGE)), or combinations thereof; or combinations of inorganic and organic membranes.

[0338] Figure 3 This is a schematic cross-sectional view of an electronic device according to another embodiment.

[0339] Figure 3 Electronic devices can be with Figure 2The difference in the electronic device lies at least in that the package portion 300 further includes a light-blocking pattern 500 and a functional region 400. The functional region 400 may be a color filter region, a color conversion region, or a combination of a color filter region and a color conversion region. At least a portion of the functional region 400 may be formed using a quantum dot composition comprising a quantum dot composite according to an embodiment.

[0340] According to the implementation method, it includes Figure 3 The light-emitting device in an electronic device can be a series light-emitting device.

[0341] [Manufacturing Method]

[0342] Various methods (such as vacuum deposition, spin coating, casting, Langmuir-Brokett (LB) process, inkjet printing, laser printing, and laser-induced thermal imaging (LITI)) can be used to form each layer, including the hole transport region, the emission layer, and each layer, including the electron transport region, in selected areas.

[0343] Color filter areas and color conversion areas can be formed in selected areas using spin coating, casting, or inkjet printing.

[0344] When each layer comprising the hole transport region, the emitter layer, and each layer comprising the electron transport region are each formed by vacuum deposition, taking into account the materials included in the layers to be formed and the structure of the layers to be formed, vacuum deposition can be performed at deposition temperatures ranging from about 100˚C to about 500˚C, and within a range of about 10 -8 To about 10 -3 The deposition was carried out at vacuum levels ranging from approximately 0.01 Å / sec to approximately 100 Å / sec.

[0345] When each layer included in the hole transport region, the emitter layer, and each layer included in the electron transport region are each formed by spin coating, taking into account the materials included in the layers to be formed and the structure of the layers to be formed, spin coating can be performed at a coating rate ranging from about 2,000 revolutions per minute (rpm) to about 5,000 rpm and a heat treatment temperature ranging from about 80˚C to about 200˚C.

[0346] The quantum dot compositions according to the embodiments can be used in solution processes including spin coating or inkjet printing.

[0347] [Terminology limitations]

[0348] As used in this article, the term "C3-C" 60 A "carbocyclic group" can be a cyclic group consisting of 3 to 60 carbon atoms, with carbon atoms as the only cyclic atom. As used herein, the term "C1-C" is also relevant. 60A "heterocyclic group" can be a cyclic group having 1 to 60 carbon atoms, and further comprising at least one heteroatom as a cyclic atom in addition to the carbon atoms. (C3-C) 60 Carbocyclic groups and C1-C 60 The heterocyclic group can be a monocyclic group consisting of a single ring or a polycyclic group in which two or more rings are fused together. In the embodiments, C1-C 60 The number of cyclic atoms in a heterocyclic group can be from 3 to 61.

[0349] As used herein, the term "cyclic group" may refer to C3-C 60 Carbocyclic or C1-C 60 Heterocyclic group.

[0350] As used in this article, “π-electron-rich C3-C” 60 A "cyclic group" can be a cyclic group having 3 to 60 carbon atoms and may not include *-N=*' as a cyclic moiety. For example, the term "π-electron-deficient nitrogen-containing C1-C" as used herein... 60 The "cyclic group" may be a heterocyclic group having 1 to 60 carbon atoms and may include *-N=*' as the cyclic moiety.

[0351] In the implementation,

[0352] C3-C 60 The carbocyclic group can be a T1 group or a group in which two or more T1 groups are fused together (e.g., cyclopentadienyl, adamantyl, norbornel, phenyl, pentabenyl, naphthyl, azulel, indarabenyl, acenaphthel, phenanthyl, anthracene, fluoranyl, triphenylene, pyrene, 1,2-benzophenantyl, perylene, penfenyl, heptabenyl, tetraphenyl, framyl, hexaphenyl, pentaphenyl, rubiginyl, keratyl, ovoleyl, indole, fluorenyl, spirodifluorenyl, benzofluorenyl, indophenantyl, or indoanthrayl).

[0353] C1-C 60The heterocyclic group can be a T2 group, a group in which two or more T2 groups are fused together, or a group in which at least one T2 group and at least one T1 group are fused together (e.g., pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiophene, benzofuranyl, carbazole, dibenzothiophene, dibenzofuranyl, dibenzocarbazole, indocarbazole, indolecarbazole, benzofuranocarbazole, benzothiophenecarbazole, benzothiophenecarbazole, benzoindocarbazole, benzocarbazole, benzonaphthofuranyl, benzonaphthophene, benzonaphthothiophene, benzofuranodibenzofuranyl, benzofuranodibenzothiophene). Fenyl, benzothiophene, dibenzothiophene, pyrazolyl, imidazole, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiazolyl, benzopyrazolyl, benzimidazolyl, benzooxazolyl, benzoisooxazolyl, benzothiazolyl, benzoisothiazolyl, pyridyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinoline Phinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cenolinyl, phthalazinyl, naphthidyl, imidazopyridyl, imidazopyrimidyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazoyl, azafluorenyl, azadibenzothiophenyl, azadibenzofuranyl, etc.

[0354] C3-C rich in π electrons 60 The cyclic group may be a T1 group, a group in which two or more T1 groups are fused together, a T3 group, a group in which two or more T3 groups are fused together, or a group in which at least one T3 group and at least one T1 group are fused together (e.g., C3-C). 60 Carbocyclic, 1H-pyrrole, thiorrole, borocyclopentadienyl, 2H-pyrrole, 3H-pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiorrole, benzothiophene, benzofuranyl, carbazole, dibenzothiorrole, dibenzothiophene, dibenzofuranyl, indole-carbazole, indole-carbazole, benzofuran-carbazole, benzothiophene-carbazole, benzothiorrole-carbazole, benzoindole-carbazole, benzocarbazole, benzonaphthofuranyl, benzonaphthophene, benzonaphthorrole, benzofuran-dibenzofuranyl, benzofuran-dibenzothiophene or benzothiophene-dibenzothiophene, etc.

[0355] Nitrogen-containing C1-C lacking π electrons 60The cyclic group may be a T4 group, a group in which two or more T4 groups are fused together, a group in which at least one T4 group and at least one T1 group are fused together, a group in which at least one T4 group and at least one T3 group are fused together, or a group in which at least one T4 group, at least one T1 group and at least one T3 group are fused together (e.g., pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl). Benzisoxazolyl, benzothiazolyl, benzoisothiazolyl, pyridinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinel, cenolinyl, phthalazinyl, naphridinyl, imidazopyridinyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorenyl, azadibenzothiophene, azadibenzothiophene, and azadibenzofuranyl, etc., among which:

[0356] The T1 group can be cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, cyclobutenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cyclohexadienyl, cycloheptenyl, adamantyl, norbornyl (or bicyclo[2.2.1]heptane), norbornyl, bicyclo[1.1.1]pentane, bicyclo[2.1.1]hexane, bicyclo[2.2.2]octane, or phenyl.

[0357] The T2 group can be furanyl, thiophene, 1H-pyrrolyl, thiophene, borocyclopentadienyl, 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azathiazolyl, azaboracyclopentadienyl, pyridinyl, pyrimidinyl, pyrazinyl, pyrazinyl, triazinyl, tetraazinyl, pyrrolylalkyl, imidazolyl, dihydropyrrolyl, piperidinyl, tetrahydropyridinyl, dihydropyridinyl, hexahydropyrimidinyl, tetrahydropyrimidinyl, dihydropyrimidinyl, piperazinyl, tetrahydropyrazinyl, dihydropyrazinyl, tetrahydropyrazinyl, or dihydropyrazinyl.

[0358] The T3 group can be furanyl, thiophene, 1H-pyrrole, thiophene, or borocyclopentadienyl, and

[0359] The T4 group can be 2H-pyrrole, 3H-pyrrole, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiazolyl, azirthiolyl, aziboranecyclopentadienyl, pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, or tetraazinyl.

[0360] Based on the structure of the formula using the corresponding terminology, such as the terms "cyclic group" and "C3-C" used in this document. 60 "Carbocyclic group", "C1-C" 60 Heterocyclic groups, π-electron-rich C3-C 60 "Cyclic groups" and "nitrogen-containing C1-C groups lacking π electrons" 60 The term "cyclic group" can be any group fused with any cyclic group, monovalent group, or polyvalent group (e.g., divalent group, trivalent group, tetravalent group, etc.). For example, "phenyl" can be benzo[a], phenyl, or phenylene, etc., as can be readily understood by those skilled in the art based on the inclusion of "phenyl" in the structure of the formula.

[0361] Unit price C3-C 60 Carbocyclic group or monovalent C1-C 60 Examples of heterocyclic groups may include C3-C 10 cycloalkyl, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkenyl, C1-C 10 Heterocyclic alkenyl, C6-C 60 Aryl, C1-C 60 Heteroaryl groups, monovalent non-aromatic fused polycyclic groups, and monovalent non-aromatic fused heterocyclic groups. Divalent C3-C 60 Carbocyclic or divalent C1-C 60 Examples of heterocyclic groups may include C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkenyl, C6-C 60 aryl, C1-C 60 Hypoaryl, divalent non-aromatic fused polycyclic groups and divalent non-aromatic fused heterocyclic groups.

[0362] As used in this article, the term "C1-C" 60 "alkyl" can be a monovalent group of a straight-chain or branched aliphatic hydrocarbon having 1 to 60 carbon atoms, and examples may include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodel, sec-decyl, and tert-decyl. The term "C1-C" as used herein... 60 "alkylene" can be C1-C 60 Alkyl groups have the same structure as divalent groups.

[0363] As used in this article, the term "C2-C" 60 "Alkenyl" can be in C2-C 60 The alkyl group has at least one carbon-carbon double bond at its middle or end, and examples may include vinyl, propenyl, and butenyl groups. As used herein, the term "C2-C" is used... 60 "Alkenyl" can be C2-C 60 Alkenes are divalent groups with the same structure.

[0364] As used in this article, the term "C2-C" 60 "Alkyne group" can be at C2-C 60 The alkyl group has at least one monovalent hydrocarbon group with a carbon-carbon triple bond in the middle or at the end, and examples may include ethynyl and propynyl groups. As used herein, the term "C2-C" is used... 60 "Isynyl group" can be related to C2-C 60 Alkynes are divalent groups with the same structure.

[0365] As used in this article, the term "C1-C" 60 "Alkoxy" can be composed of -O(A 101 (where A) 101 Can be C1-C 60 Alkyl groups are monovalent groups, and examples of them may include methoxy, ethoxy, and isopropoxy.

[0366] As used in this article, the term "C3-C" 10 "Cycloalkyl" can be a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and examples of it may include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornel (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, and bicyclo[2.2.2]octyl, etc. The term "C3-C" as used herein... 10 "Cycloalkylene" can be C3-C 10 Cycloalkyl groups have the same divalent structure.

[0367] As used in this article, the term "C1-C" 10 "Heterocyclic alkyl" can be a monovalent cyclic group having 1 to 10 carbon atoms and further comprising at least one heteroatom as a cyclic atom in addition to the carbon atoms, and examples may include 1,2,3,4-oxatriazolyl, tetrahydrofuranyl, and tetrahydrophenylthioyl. The term "C1-C" as used herein is also used. 10 "Heterocyclic alkyl" can be C1-C 10 Heterocyclic alkyl groups have the same divalent structure.

[0368] As used in this article, the term "C3-C"10 "Cycloalkenyl" can be a monovalent cyclic group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring structure and being non-aromatic, and examples may include cyclopentenyl, cyclohexenyl, and cycloheptenyl. As used herein, the term "C3-C" is also used. 10 "Iridylene" can be related to C3-C 10 Cycloalkenyl groups are divalent groups with the same structure.

[0369] As used in this article, the term "C1-C" 10 "Heterocyclic alkenyl" can be a monovalent cyclic group having 1 to 10 carbon atoms, further including at least one heteroatom as a cyclic atom in addition to carbon atoms, and having at least one double bond in its ring structure. C1-C 10 Examples of heterocyclic alkenyl groups may include 4,5-dihydro-1,2,3,4-oxarizolyl, 2,3-dihydrofuranyl, and 2,3-dihydrophenylthiol. As used herein, the term "C1-C..." 10 "Heterocyclic alkenyl" can be C1-C 10 Heterocyclic alkenyl groups are divalent groups with the same structure.

[0370] As used in this article, the term "C6-C" 60 "Aryl" can be a monovalent group having a carbocyclic aromatic system with 6 to 60 carbon atoms, and as used herein in the term "C6-C". 60 "Arylene" can be a divalent group in a carbocyclic aromatic system with 6 to 60 carbon atoms. (C6-C) 60 Examples of aryl groups may include phenyl, pentanenyl, naphthyl, azulel, indole, acenaphthel, phenanthyl, anthrayl, fluoranthyl, triphenylene, pyrene, 1,2-benzophenanthryl, perylene, pentanenyl, heptanenyl, tetraphenyl, framyl, hexaphenyl, pentaphenyl, rubiginyl, myristyl, and ovoleyl. When C6-C 60 Aryl and C6-C 60 When each of the aryl groups comprises two or more rings, the corresponding two or more rings may fused together.

[0371] As used in this article, the term "C1-C" 60 "Heteroaryl" can be a monovalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms and further including at least one heteroatom as a cyclizing atom in addition to carbon atoms. The term "C1-C" is used herein. 60 "Hypo-heteroaryl" can be a divalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms and further including at least one heteroatom as a cyclic atom in addition to carbon atoms. C1-C 60Examples of heteroaryl groups may include pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzo[a]quinolinyl, isoquinolinyl, benzo[a]isoquinolinyl, quinoxalinyl, benzo[a]quinoxalinyl, quinazolinyl, benzo[a]quinazolinyl, cyclolinyl, phenanthrolinel, phthalazinyl, and naphthidyl. When C1-C 60 heteroaryl and C1-C 60 When each heteroaryl group comprises two or more rings, the corresponding two or more rings can fused together.

[0372] As used herein, the term "monovalent nonaromatic fused polycyclic group" can refer to a monovalent group having two or more rings fused together, with only carbon atoms (e.g., 8 to 60 carbon atoms) as cyclic atoms, and generally lacking aromaticity in its molecular structure. Examples of monovalent nonaromatic fused polycyclic groups may include indenyl, fluorenyl, spirodifluorenyl, benzo[a]fluorenyl, indo[a]phenanthryl, and indo[a]anthrayl. As used herein, the term "divalent nonaromatic fused polycyclic group" can refer to a divalent monovalent group having the same structure as a nonaromatic fused polycyclic group.

[0373] As used herein, the term "monovalent nonaromatic fused heterocyclic group" can be a monovalent group having two or more rings fused together, further including at least one heteroatom as a cyclic atom in addition to carbon atoms (e.g., 1 to 60 carbon atoms), and generally not having aromaticity in its molecular structure. Examples of monovalent non-aromatic fused heterocyclic groups may include pyrrole, phenylthio, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiol, benzobenzenethio, benzofuranyl, carbazole, dibenzothiol, dibenzobenzenethio, dibenzofuranyl, azacarbazole, azafluorenyl, azadibenzothiol, azadibenzobenzenethio, azadibenzofuranyl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, oxadiazolyl, and thiadiazolyl. Benzopyrazolyl, benzoimidazolyl, benzooxazolyl, benzothiazolyl, benzooxadiazolyl, benzothiadiazolyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, indolecarbazolyl, indolocarbazolyl, benzofuranocarbazolyl, benzothiophenecarbazolyl, benzothiophenecarbazolyl, benzoindolocarbazolyl, benzocarbazolyl, benzonaphthuryl, benzonaphthiophene, benzofuranodibenzofuranyl, benzofuranodibenzophenethyl, and benzothiophene dibenzophenethyl. As used herein, the term "divalent nonaromatic fused heteropolycyclic group" can refer to a divalent group having the same structure as a monovalent nonaromatic fused heteropolycyclic group.

[0374] As used in this article, the term "C6-C" 60 "Aryloxy group" can be composed of -O(A102 (where A) 102 It can be C6-C 60 Aryl) group, and as used herein by the term "C6-C 60 "Arylthio" can be formed by -S(A 103 (where A) 103 It can be C6-C 60 (aryl) represents a group.

[0375] As used in this article, the term "C7-C" 60 "Aryl" can be composed of -(A 104 (A) 105 (where A) 104 Can be C1-C 54 Alkylene, and A 105 It can be C6-C 59 Aryl) group, and as used herein by the term "C2-C 60 "Heteroarylene" can be composed of -(A 106 (A) 107 (where A) 106 Can be C1-C 59 Alkylene, and A 107 Can be C1-C 59 (Heteroaryl) represents a group.

[0376] In the specification, the group "R" 10a "Can be:

[0377] Deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano or nitro;

[0378] Each of the unsubstituted or substituted C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl or C1-C 60 Alkoxy groups: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl alkyl, C2-C 60 Heteroaryl, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q)11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 ) or any combination thereof;

[0379] Each of the unsubstituted or substituted C3-Cs as described below 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl or C2-C 60 Heteroalkyl groups: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 Alkyne group, C1-C 60 Alkoxy, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl alkyl, C2-C 60 Heteroaryl, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 ) or any combination thereof; or

[0380] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ).

[0381] In the instruction manual, Q1 to Q3, Q 11 To Q 13 Q21 To Q 23 and Q 31 To Q 33 Each can be independently represented as: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkyne group; C1-C 60 Alkoxy groups; or each group may be oxidized by deuterium, -F, cyano, or C1-C. 60 Alkyl, C1-C 60 C3-C substituted with alkoxy, phenyl, biphenyl or a combination thereof 60 Carbocyclic group, C1-C 60 Heterocyclic group, C7-C 60 Aryl or C2-C 60 Heteroaryl alkyl groups.

[0382] As used herein, the term "heteroatom" can refer to any atom other than carbon and hydrogen. Examples of heteroatoms may include O, S, N, P, Si, B, Ge, Se, and any combination thereof.

[0383] In the specification, examples of "transition metals in the third row" may include hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), and gold (Au).

[0384] In the specification, the term "Ph" refers to phenyl, the term "Me" refers to methyl, the term "Et" refers to ethyl, and the terms "tert-Bu" and "Bu" are used interchangeably. t Each refers to tert-butyl, and the term "OMe" refers to methyl methacrylate (MMA).

[0385] As used herein, the term "biphenyl" can mean "phenyl substituted with a phenyl group." For example, "biphenyl" can refer to a phenyl group having a C6-C2 configuration. 60 Aryl groups are substituted phenyl groups.

[0386] As used herein, the term "terphenyl" can mean "phenyl substituted with biphenyl." For example, "terphenyl" can be a phenyl compound with a C6-C substituted molecule. 60 Aryl-substituted C6-C 60 Aryl groups are substituted phenyl groups.

[0387] In the above definition of substituents, the maximum number of carbon atoms in the definition of a substituent is only listed as an example. For example, in C1-C 60 In the definition of alkyl, the number 60, as the maximum number of carbon atoms, is merely an example, and the definition of alkyl can also be applied to C1-C. 20 Alkyl groups. The same applies to other cases.

[0388] In this specification, unless otherwise specified, the symbols * and *' as used herein refer to the bonding sites with adjacent atoms in the corresponding formula or part.

[0389] The compounds and light-emitting devices according to the embodiments will be described in detail below with reference to the following examples.

[0390] [Example]

[0391] Experimental Example 1 (Natural Ligands)

[0392] CuI, GaI3, and InI3 were added to a three-necked flask in a molar ratio of 2:5:4, and oleylamine (OLA) and trioctylamine (TOA), serving as solvent and ligand respectively, were added in a 1:1 ratio and stirred (first solution). The first solution was degassed under vacuum at 120°C for 30 minutes. Separately, a 1M precursor solution (S-OLA solution) was prepared by dissolving sulfur (S) powder in OLA. The prepared S-OLA solution was injected into the first solution at 120°C under N2 conditions. In this respect, the total amount of S precursor injected was three times the proportion of Ga. The temperature of the mixed solution was increased to 230°C, and the reaction was carried out for 2 hours to synthesize the CIGS core.

[0393] At 120°C and under a N2 atmosphere, a zinc oleate (ZnOA) solution dissolved in TOA and a TOP-S solution were each added to the synthesized CIGS core in amounts 1.5 times the amount of Group III elements (In+Ga) added during CIGS core synthesis. The reaction was allowed to proceed for 1 hour after the temperature was raised to 260°C. The surface of the quantum dots was post-treated with dodecyl mercaptan (DDT) and trioctylphosphine (TOP) solutions, and the reaction was terminated. Ethanol was added to the CIGS / ZnS quantum dot solution and centrifuged at 9,000 rpm. The centrifuged quantum dots were dispersed in toluene, ethanol was added again, and the mixture was centrifuged once more, dried, and dissolved in cyclohexyl acetate (CHA).

[0394] Experimental Example 2 (Ligand Exchange)

[0395] At 80 °C under a nitrogen atmosphere, a CIGS quantum dot solution (1.0 g in 2.36 mL of cyclohexyl acetate) synthesized in Example 1, in which oleic acid is used as a natural ligand, was mixed with compound MAS (0.23 g, 1 mmol) and stirred vigorously for 3.5 h to allow ligand exchange. Hexane was added to the quantum dot solution in an amount 10 times its weight, and the mixture was centrifuged (9,500 rpm, 3 min). The resulting precipitate was then vacuum dried to obtain the quantum dot complex.

[0396] Experiments 3 to 7 (ligand exchange)

[0397] The quantum dot complex was obtained using the same method as in Example 1, except that compounds L1 to L5 were used instead of 0.23 g of compound MAS as the ligand exchange compound in the amounts shown in Table 1 (corresponding to 1 mmol).

[0398] To assess lightfastness, the photoconversion efficiency (PCE) of each quantum dot composite in Examples 1 through 7 was measured over time. The results are shown in Table 1 and Figure 4 PCE was measured using an Otsuka Electronics QE-2100 instrument on a sample with dimensions of 20 mm × 20 mm and a 460 nm light source. PCE is expressed as a percentage of the PCE at the moment the light source begins to illuminate the quantum dot layer (0 hr).

[0399] [Table 1]

[0400]

[0401]

[0402]

[0403]

[0404] Refer to Table 1 and Figure 4 In Experimental Examples 6 and 7, where compounds L4 and L5 were used as ligand exchange materials, the PCE of the quantum dot complex decreased the most over time.

[0405] Example 1

[0406] At 80°C under a nitrogen atmosphere, a CIGS / ZnS quantum dot solution synthesized in Example 1, in which oleic acid was used as a natural ligand (1.0 g in 2.36 mL of cyclohexyl acetate), was mixed with compound MAS (0.23 g, 1 mmol) and vigorously stirred for 3.5 h to carry out the first ligand exchange. At 80°C under a nitrogen atmosphere, compound L1 (0.25 g, 0.7 mmol) was added to the quantum dot solution after the first ligand exchange, and vigorously stirred for 3.5 h to carry out the second ligand exchange. Hexane was added to the quantum dot solution in an amount 10 times the weight of the solution and centrifuged (9,500 rpm, 3 min). The resulting precipitate was then vacuum dried to obtain the quantum dot complex.

[0407] Example 2

[0408] The quantum dot complex was obtained in the same manner as in Example 1, except that compound L2 (0.22 g, 0.7 mmol) was used instead of compound L1.

[0409] Example 3

[0410] The quantum dot complex was obtained in the same manner as in Example 1, except that compound L3 (0.28 g, 0.7 mmol) was used instead of compound L1.

[0411] Comparative Example 1

[0412] Quantum dot complexes were obtained using the same method as in Experimental Example 1, without ligand exchange.

[0413] Comparative Example 2

[0414] The quantum dot complex was obtained in the same manner as in Example 1, except that compound L4 (0.28 g, 0.7 mmol) was used instead of compound L1.

[0415] Comparative Example 3

[0416] The quantum dot complex was obtained in the same manner as in Example 1, except that compound L5 (0.31 g, 0.7 mmol) was used instead of compound L1.

[0417] To assess lightfastness, the PCE of the quantum dot composites of Examples 1 to 3 and Comparative Examples 1 to 3 was measured over time using the method described above. The results are shown in Table 2 and... Figure 5 middle.

[0418] [Table 2]

[0419]

[0420] Refer to Table 2 and Figure 5 The decrease in light conversion efficiency over time of the quantum dot composites of Examples 1 to 3 was less than that of the quantum dot composites of Comparative Examples 1 to 3. As a result, it is evident that using compounds L1 to L3 as bidentate ligands (second ligands) is more beneficial for improving the lightfastness of the quantum dot layer than using compounds L4 or L5.

[0421] Example 4

[0422] The quantum dot complex was obtained in the same manner as in Example 1, except that compound L1 (0.13 g, 0.37 mmol) was used instead of compound L1.

[0423] Example 5

[0424] The quantum dot complex was obtained in the same manner as in Example 1, except that compound L2 (0.11 g, 0.35 mmol) was used instead of compound L1.

[0425] Example 6

[0426] The quantum dot complex was obtained in the same manner as in Example 1, except that compound L3 (0.14 g, 0.35 mmol) was used instead of compound L1.

[0427] Comparative Example 4

[0428] The quantum dot complex was obtained in the same manner as in Example 1, except that compound L1 (0.38 g, 1 mmol) was used instead of compound L2.

[0429] Comparative Example 5

[0430] The quantum dot complex was obtained in the same manner as in Example 1, except that compound L2 (0.33 g, 1 mmol) was used instead of compound L1.

[0431] Comparative Example 6

[0432] The quantum dot complex was obtained in the same manner as in Example 1, except that compound L3 (0.42 g, 1 mmol) was used instead of compound L1.

[0433] To evaluate lightfastness, the light conversion efficiency (PCE) of the quantum dot composites of Examples 4 to 6 and Comparative Examples 4 to 6 over time was measured using the methods described above. The results are shown in Table 3 and... Figure 6 middle.

[0434] [Table 3]

[0435]

[0436] Refer to Table 3 and Figure 4 The decrease in light conversion efficiency over time of the quantum dot composites of Examples 4 to 6 was smaller than that of the quantum dot composites of Comparative Examples 4 to 6.

[0437] Thermogravimetric analysis (TGA)

[0438] The CIGS quantum dot complexes obtained in Experimental Examples 1 and 4, Examples 2 and 5, and Comparative Example 5 were subjected to TGA. Figure 7Thermogravimetric analysis (TGA) plots of the CIGS quantum dot composites obtained in Experimental Examples 1 and 4, Examples 2 and 5, and Comparative Example 5 are shown. (Reference) Figure 7 The TGA shows that, based on the total weight of 100 wt% of the CIGS quantum dot complexes obtained in Experimental Examples 1 and 4, Examples 2 and 5 and Comparative Example 5, the organic ligands account for about 30 wt% to about 34 wt%.

[0439] Thermogravimetric analysis showed that the combined weight ratio of MAS ligand and compound L2 ligand to the weight of natural ligand in the CIGS quantum dot complexes of Examples 2 and 5 and Comparative Example 5 was 77:23, 62:38 and 86:14, respectively, and the weight ratio of compound L2 to the weight of natural ligand in the CIGS quantum dot complex of Experimental Example 4 was about 81:19.

Claims

1. A quantum dot composite, comprising: quantum dots; as well as The first ligand and the second ligand are each coordinated on the surface of the quantum dot, wherein: The first ligand is a chain-like bidentate ligand comprising an ethylene glycol group (-OCH2CH2O-), and The second ligand is a ligand comprising an acryloyl group (CH2=CHC(=O)-) and an ethylene glycol group.

2. The quantum dot complex according to claim 1, wherein the first ligand is represented by formula 1: Formula 1 In Equation 1, R1 is a C1-C2 alkyl group. R2 is either hydrogen or a C1-C2 alkyl group. a1 is an integer selected from 2 to 4. a2 is an integer selected from 0 to 3, and a3 is an integer of 1 or 2.

3. The quantum dot composite according to claim 2, wherein: R1 is methyl, and R2 can be either hydrogen or methyl.

4. The quantum dot composite according to claim 2, wherein: R1 is methyl, and R2 is hydrogen in each of its components.

5. The quantum dot complex according to claim 2, wherein R1 and R2 are each methyl groups.

6. The quantum dot composite according to claim 2, wherein a1 is 2 or 3.

7. The quantum dot composite according to claim 2, wherein: a2 is 3, and a3 is 1.

8. The quantum dot complex according to claim 1, wherein the first ligand is selected from the following compounds: 。 9. The quantum dot composite according to claim 1, wherein: The second ligand further comprises a carboxyl (-C(=O)OH) group, and The second ligand is coordinated to the surface of the quantum dot via the carboxyl group.

10. The quantum dot complex of claim 1, wherein the second ligand comprises the following compounds: 。 11. The quantum dot complex of claim 1, wherein the total amount of the first ligand and the second ligand ranges from 15 wt% to 25 wt% based on the total weight of the quantum dot complex.

12. The quantum dot complex according to claim 1, wherein the molar ratio of the first ligand to the second ligand is in the range of 0.3:1 to 0.8:

1.

13. The quantum dot composite of claim 1, wherein the quantum dots comprise: Group II-VI semiconductor compounds; Group III-V semiconductor compounds; Group III-VI semiconductor compounds; Group I-III-VI semiconductor compounds; Group IV-VI semiconductor compounds; Group IV elements or compounds; or combinations thereof.

14. The quantum dot composite of claim 1, wherein the quantum dots comprise: nuclear; and A shell covering the core.

15. The quantum dot composite of claim 1, wherein the quantum dots comprise: Copper indium gallium sulfide (CIGS) core; and ZnS shell.

16. A quantum dot composition comprising: Quantum dot composites according to any one of claims 1 to 15; and Solvent.

17. An electronic device comprising the quantum dot composite according to claim 1.

18. The electronic device of claim 17, further comprising: Color filters and / or color conversion layers, wherein: The color filter and / or the color conversion layer includes the quantum dot composite.

19. The electronic device of claim 18, further comprising: Light source, of which: The light source is a light-emitting device, which includes: First electrode; The second electrode facing the first electrode; and An emission layer between the first electrode and the second electrode.

20. An electronic device, comprising: The electronic device according to claim 19, wherein: The electronic devices include flat panel displays, curved displays, computer monitors, medical monitors, televisions, billboards, indoor lights, outdoor lights, signal lights, head-up displays, fully transparent displays, partially transparent displays, flexible displays, rollable displays, foldable displays, retractable displays, laser printers, telephones, mobile phones, tablet computers, tablet PCs, personal digital assistants (PDAs), wearable devices, laptop computers, digital cameras, camcorders, viewfinders, microdisplays, three-dimensional (3D) displays, virtual reality displays, augmented reality displays, vehicles, video walls including multiple displays spliced ​​together, theater screens, stadium screens, light therapy devices, or signs.

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