Finned dielectric deposition ring for physical vapor deposition

Abstract

This document provides methods and apparatus for processing a substrate. In some embodiments, a processing kit for a substrate support includes: a dielectric plate having a lower surface configured to cover a support surface of the substrate support and an upper surface configured to support the substrate; and a dielectric deposition ring surrounding the dielectric plate and configured to cover a portion of the substrate support disposed radially outward from the support surface.

Description

Technical Field

[0001] The embodiments of this disclosure generally relate to a semiconductor processing apparatus and processing. Background Technology

[0002] The inventors have observed arcing defects in some high-power physical vapor deposition (PVD) processes for depositing metal on warped substrates. Specifically, the inventors have observed that warped substrates exhibit arcing defects when a gap is created between the substrate edge and a grounded substrate support. This gap allows metal to deposit on the substrate support and causes an arc when the substrate and substrate support are short-circuited.

[0003] Therefore, the inventors have provided embodiments of improved apparatus and techniques for processing substrates. Summary of the Invention

[0004] This document provides methods and apparatus for processing a substrate. In some embodiments, a processing kit for a substrate support includes: a dielectric plate having a lower surface configured to cover a support surface of the substrate support and an upper surface configured to support the substrate; and a dielectric deposition ring surrounding the dielectric plate and configured to cover a portion of the substrate support disposed radially outward from the support surface.

[0005] In some embodiments, the apparatus for processing a substrate includes: a substrate support having a support surface and an outer flange disposed outwardly from the support surface, wherein the support surface is raised relative to the outer flange; and a processing kit disposed on top of the substrate support. This processing kit may include: a dielectric plate having a lower surface covering the support surface and an upper surface configured to support the substrate; and a dielectric deposition ring surrounding the dielectric plate and covering the outer flange.

[0006] In some embodiments, a physical vapor deposition chamber includes: a chamber body; a cover assembly coupled to the chamber body and configured to support one or more targets for depositing one or more materials onto a substrate during use; a substrate support disposed within the chamber body opposite the cover assembly, the substrate support having a support surface and an outer flange disposed outwardly from the support surface, wherein the support surface is raised relative to the outer flange; and a processing kit disposed on top of the substrate support, the processing kit including: a dielectric plate having a lower surface covering the support surface and an upper surface configured to support the substrate; and a dielectric deposition ring surrounding the dielectric plate and covering the outer flange.

[0007] Other and further embodiments of this disclosure are described below. Attached Figure Description

[0008] The embodiments of this disclosure, which have been briefly summarized above and discussed in more detail below, can be understood by referring to the illustrative embodiments depicted in the accompanying drawings. However, the drawings only show typical embodiments of this disclosure and should therefore not be considered as limiting the scope, as other equivalent embodiments of this disclosure are permissible.

[0009] Figure 1 This is a schematic diagram of a physical vapor deposition system with a processing kit according to an embodiment of this disclosure.

[0010] Figure 2 This is a schematic side view of a portion of a substrate support and processing kit according to an embodiment of this disclosure.

[0011] Figure 3 This is a schematic side view of a portion of a substrate support and processing kit according to an embodiment of this disclosure.

[0012] Figure 4 This is a schematic side view of a portion of a substrate support and processing kit according to an embodiment of this disclosure.

[0013] Figure 5 This is a schematic side view of a portion of a substrate support and processing kit according to an embodiment of this disclosure.

[0014] Figure 6 This is a schematic side view of a portion of a substrate support and processing kit according to an embodiment of this disclosure.

[0015] Figure 7 This is a schematic side view of a portion of a substrate support and processing kit according to an embodiment of this disclosure.

[0016] For ease of understanding, the same reference numerals are used where possible to denote common elements in the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0017] This document provides embodiments of methods and apparatus for processing substrates.

[0018] Figure 1 It is applicable according to certain implementation methods Figure 1 A side cross-sectional view of the PVD chamber 100 of a substrate processing system. In some embodiments, the PVD chamber 100 may be a deposition chamber as part of a multi-chamber substrate processing system. In some embodiments, the PVD chamber 100 may be a separate deposition chamber. Although referenced... Figure 1Specific details of the PVD chamber are described, but other PVD chambers may be appropriately modified based on the teachings disclosed herein.

[0019] A PVD chamber 100 typically includes a chamber body 102, a cover assembly 104 coupled to the chamber body 102, a magnetron 108 coupled to the cover assembly 104, a substrate support 110 disposed within the chamber body 102, and one or more targets 112 disposed between the magnetron 108 and the substrate support 110. Although Figure 1 The figure shows a target 112, and multiple targets 112 may be provided within the PVD chamber 100. For example, other embodiments of the PVD chamber suitable for modification according to the teachings disclosed herein are described in co-owned U.S. Patent Application Publication No. 2023 / 0130947 A1, published April 27, 2023, entitled “Tilted PVD Source with Rotating Base”.

[0020] During processing, the interior of the PVD chamber 100 or the processing area 118 is maintained under vacuum pressure. The processing area 118 is generally defined by the chamber body 102 and the cover assembly 104, such that the processing area 118 is mainly located between the target 112 and the substrate support surface of the substrate support 110.

[0021] Power supply 106 is electrically connected to target 112 to apply a negative bias voltage to target 112. In some embodiments, power supply 106 is a direct DC-mode source or a pulsed DC-mode source. However, other types of power supplies, such as radio frequency (RF) sources, are also conceivable.

[0022] Target 112 includes a target material and a backplate, and is part of cover assembly 104. The front surface of the target material of target 112 defines a portion of processing area 118. The backplate is disposed between magnetron 108 and the target material of target 112. Electrical short circuits between the backplate and the support plate 113 of grounded cover assembly 104 are prevented by electrically insulating the backplate from the support plate 113 of cover assembly 104 using an electrical insulator. In some embodiments, the backplate may have one or more cooling channels configured to receive coolant (e.g., DI water) passing through it to cool or control the temperature of target 112.

[0023] A magnetron 108 is disposed above a portion of the target 112 and in the region of the cap assembly 104 maintained at atmospheric pressure. The magnetron 108 includes a plurality of magnets 111 attached to a shunt plate 109. The magnetron is used to confine plasma near the target 112 to facilitate the sputtering of material to be deposited on a substrate disposed on a substrate support 110 during processing from the target 112.

[0024] The substrate support 110 has a support surface 114 to support the substrate 116. In some embodiments, the substrate support 110 may be configured to support the substrate by gravity; for example, the substrate support does not include a vacuum chuck or an electrostatic chuck. In some embodiments, the support surface 114 of the substrate support is conductive, such as being made of metal.

[0025] A processing kit 124 (described in more detail below) is disposed above the support surface 114 and serves to support the substrate 116 and protect the substrate support 110 during processing. In some embodiments, the processing kit 124 is mechanically operated. For example, the weight of the processing kit 124 may secure it in place on the substrate support. In some embodiments, the processing kit 124 may be lifted relative to the substrate support 110 to contact its bottom surface.

[0026] The temperature of the substrate 116 can be controlled using a temperature control system 132. In some embodiments, the temperature control system 132 has an external cooling source that supplies coolant to the substrate support 110. In some embodiments, an RF bias source 134 is electrically coupled to the substrate support 110 to apply a bias voltage to the substrate 116 during the sputtering process. Alternatively, the substrate support 110 may be grounded, floated, or biased using only a DC or RF voltage source. Applying a bias voltage to the substrate 116 can improve one or more of the following on the substrate surface: film density, adhesion, step coverage, and / or material reactivity.

[0027] Shaft 121 is coupled to the bottom surface of substrate support 110. Rotary joint 119 is coupled to the lower end of shaft 121 to provide rotary fluid coupling to temperature control system 132 and rotary electrical coupling to RF bias source 134. Rotary joint 119 includes a magnetic fluid rotary seal mechanism (also known as a "Ferrofluidic® seal") for vacuum rotary feedthrough.

[0028] In some embodiments, substrate 116 is a panel. In some embodiments, the support surface 114 of substrate support 110 is adapted to a single square or rectangular panel substrate with a side length of approximately 500 mm or greater, such as 510 mm by 515 mm or 600 mm by 600 mm. However, the apparatus and methods of this disclosure can be implemented with many different types and sizes of substrates, including circular wafers or rectangular panels with other dimensions.

[0029] In some embodiments, the substrate support 110 is rotatable about an axis (e.g., a vertical axis) perpendicular to at least a portion of the support surface 114 of the substrate support 110. In some embodiments, a motor 131 is provided to drive the substrate support 110 to rotate continuously relative to the target 112 to improve film uniformity. A separate motor 115 (e.g., an electric linear actuator) is provided to raise and lower the substrate support 110. A bellows 117 surrounds the shaft 121 and forms a seal between the chamber body 102 and the motor 131 during the raising and lowering of the substrate support 110.

[0030] The bottom surface of target 112 is defined by the surface of the target material, which faces the support surface 114 of substrate support 110 and the front surface of substrate 116. In some embodiments, the target material of target 112 is formed of metal for sputtering a corresponding film composition onto substrate 116. In one example, the target material may include a pure material or alloy containing an element selected from the group consisting of copper (Cu), molybdenum (Mo), nickel (Ni), titanium (Ti), tantalum (Ta), aluminum (Al), cobalt (Co), gold (Au), silver (Ag), manganese (Mn), and silicon (Si). As an example, the material deposited on substrate 116 may include pure metals, doped metals, metal alloys, metal nitrides, metal oxides, metal carbides containing such elements, and silicon-containing oxides, nitrides, or carbides.

[0031] The inventors discovered that during processing, the substrate sometimes warps and cannot be laid flat on the substrate support. In this case, the inventors further discovered that metal from the deposition process deposits and accumulates on the back side of the substrate and / or the substrate support surface, resulting in arcing when the substrate short-circuits to the substrate support. Furthermore, the inventors observed that the edges of the substrate need to be sufficiently spaced from sharp edges to prevent bipolar arcing. While electrostatic chucks or clamps may be used in other applications with warped substrates, the inventors have observed that this solution is not suitable for certain applications, such as high-power (e.g., above approximately 10 kWh) PVD deposition of metallic materials on substrates with through-holes, or in other configurations where the metallic material can be deposited directly on the substrate support (e.g., through open through-holes).

[0032] Typically, the back side of the substrate is in direct contact with the support surface 114 of the substrate support 110. For example, the entire back side of the substrate may be in electrical and thermal contact with the support surface of the substrate support, which may be made of metal. Therefore, the inventors provide a substrate support and processing kit as described above to advantageously reduce or overcome the aforementioned problems.

[0033] Despite Figures 2 to 7Several embodiments are described in the figure, and any aspect shown in any figure can be combined or integrated with any other embodiment described in the figure. In one illustrative example, Figure 2 A schematic side view depicting a portion of a substrate support and processing kit according to an embodiment of this disclosure is shown. The substrate support 110 includes a support surface 202 (e.g., Figure 1 The support surface 202 has a support surface 114 and an outer flange 204 extending outward from the support surface 202. The support surface 202 is raised relative to the outer flange 204. The dimensions of the support surface 202 are smaller than a given dimension of the substrate 116 to be supported, such that the outer edge 212 of the substrate 116 extends beyond the outer edge of the support surface 202. The support surface is substantially planar and can be held horizontally by the shaft 121 (see, for example, see...). Figure 1 The outer flange 204 may also be substantially planar and disposed parallel to the support surface 202. Sidewalls extend between the support surface 202 and the outer flange 204. The sidewalls may be substantially perpendicular to the support surface 202 and the outer flange 204 (e.g., vertical). In some embodiments, the support surface 202 and the outer flange 204 may be made of metal to facilitate grounding and thermal control of the substrate 116 during processing.

[0034] Processing kit 124 includes a dielectric plate 206 and a dielectric deposition ring 208. The dielectric plate 206 and the dielectric deposition ring 208 may be made entirely of a processing-compatible dielectric material, or such a material may be coated at least along their upper surface or on all exposed surfaces of their processing volumes (e.g., the upper surface and sidewalls). Making the dielectric plate 206 and the dielectric deposition ring 208 entirely of a dielectric material, or coating the dielectric plate 206 and the dielectric deposition ring 208 with a dielectric material, advantageously reduces the risk of short circuits between the substrate 116 and the substrate support 110 when depositing metal material on the substrate 116. Furthermore, processing kit 124 facilitates deposition on warped substrates without the need for edge jigs to flatten the substrate, thereby facilitating edge-to-edge deposition and deposition along the outer edges of the substrate, which is desirable in certain applications, for example, to prevent delamination of the deposited metal layer. The inventors have further observed that using the apparatus disclosed herein also improves deposition uniformity near the edges on warped substrates. Furthermore, by limiting or preventing material deposition on the substrate support 110, the device of this disclosure further advantageously extends the tool's uptime by extending the processing time before preventative maintenance is required to replace the processing kit.

[0035] The dielectric plate 206 has a shape corresponding to the shape of the support surface 202 of the substrate support (e.g., the dielectric plate may be circular for a circular support surface, rectangular for a rectangular support surface, etc.). The dielectric plate 206 has a lower surface configured to cover the support surface 202 of the substrate support 110 and an upper surface configured to support the substrate 116. For example, the lower surface of the dielectric plate 206 has dimensions substantially similar to the dimensions of the support surface 202 of the substrate support 110. In some embodiments, the upper surface of the dielectric plate 206 has dimensions substantially similar to the dimensions of the support surface 202 of the substrate support 110. In some embodiments, the dielectric plate 206 has no through holes. In some embodiments, the dielectric plate 206 has only through holes configured to allow a lifting rod from the substrate support 110 to pass through, so as to allow the substrate 116 to be raised and lowered relative to the upper surface of the dielectric plate 206.

[0036] The dielectric deposition ring 208 has a central opening sized such that the dielectric deposition ring 208 surrounds the dielectric plate 206. As used herein, the term "ring" is intended to include circular and non-circular (e.g., polygonal) shapes surrounding the dielectric plate 206. For example, the shape of the central opening may be the same as the shape of the dielectric plate 206. The dielectric deposition ring 208 is configured to cover a portion (e.g., an outer flange 204) of a substrate support 110 disposed radially outward from the support surface 202.

[0037] Dielectric deposition ring 208 includes one or more fins 210 extending from the upper surface of dielectric deposition ring 208. Figures 2 to 7 The illustrative illustration shows multiple fins 210. One or more fins 210 advantageously increase the amount of material that can be captured by the dielectric deposition ring 208 before preventative maintenance is required to replace and clean it. The innermost fins 214 of the one or more fins 210 may be positioned along the edge of the central opening of the dielectric deposition ring 208. In some embodiments, the innermost fins 214 of the one or more fins 210 extend to a height above the upper surface of the dielectric plate 206. The innermost fins 214 extending above the upper surface of the dielectric plate 206 advantageously limit or prevent the deposition of material on the upper surface of the dielectric plate 206 during processing.

[0038] In embodiments having a plurality of fins 210, including any of the embodiments described herein, the individual fins of the plurality of fins 210 may be uniformly spaced or non-uniformly spaced. Furthermore, each fin of the plurality of fins 210 may have an independent geometry compared to the other fins of the plurality of fins 210. For example, each fin may have one or more independent lengths, widths, spacings, or angles compared to any other fin of the plurality of fins 210. Thus, in some embodiments, at least one fin of the plurality of fins has at least one different height or width than another fin of the plurality of fins. In some embodiments, each fin of the plurality of fins has a progressively decreasing height from the innermost fin 214 to each subsequent fin moving in a radially outward direction. In some embodiments, when the substrate 116 is positioned on top of the processing kit 124, the length of the fin is selected to be at least a predetermined distance from the outer edge 212 of the substrate 116 to advantageously avoid arcing during processing. For example, in some implementations, there is a distance of about 5 mm between any fin and the outer edge 212, although other distances may be used depending on the processing conditions.

[0039] In some embodiments, including any of the embodiments described herein, each of the one or more fins 210 may be arranged parallel to the vertical central axis of the processing kit 124, which is orthogonal to the extension of the dielectric deposition ring 208 (e.g., perpendicular to the general plane of the dielectric deposition ring 208). In some embodiments, including any of the embodiments described herein, and as Figure 3 As depicted, each of the one or more fins 210 may be arranged non-parallel to the vertical central axis. In some embodiments, including any of the embodiments described herein, at least one fin of the one or more fins 210 is arranged non-parallel to the vertical central axis of the processing kit. In some embodiments having multiple fins 210, including any of the embodiments described herein, each of the multiple fins 210 may be arranged at the same angle (e.g., parallel to each other). In some embodiments having multiple fins 210, including any of the embodiments described herein, at least one fin of the multiple fins 210 may be arranged at a different angle than at least one other fin of the multiple fins 210 (e.g., non-parallel to each other).

[0040] The inner sidewall of the dielectric deposition ring 208 defines the central opening of the dielectric deposition ring 208. In some embodiments, the innermost fin 214 of the plurality of fins 210 at least partially forms the inner sidewall (see, for example...). Figures 2 to 5 The size of the central opening of the dielectric deposition ring 208 is typically closely matched to the outer periphery of the dielectric plate 206. This configuration advantageously reduces the risk of deposition in any gaps between the dielectric deposition ring 208 and the dielectric plate 206.

[0041] In some embodiments, grooves may be provided along the edge of the processing kit 124, adjacent to individual components of the processing kit 124 or the substrate support 110, to reduce or prevent material deposition across adjacent components to form a continuous layer. For example, as... Figures 2 to 4 As depicted, in some embodiments, the groove 216 may be provided along the lower outer edge of the dielectric plate 206 (e.g., in the lower surface of the dielectric plate 206 adjacent to the support surface 202 of the substrate support 110). Alternatively or in combination, and as... Figures 2 to 4 As depicted, the groove 218 may be provided along the lower inner edge of the dielectric deposition ring 208 (e.g., in the lower surface of the dielectric deposition ring 208 adjacent to the outer flange 204 of the substrate support 110). In some embodiments, and as shown... Figure 4 As depicted, a similar groove 402 may be formed along the lower outer edge of the dielectric deposition ring 208. The groove 402 may advantageously reduce or prevent material deposition to form a continuous layer from the dielectric deposition ring 208 to the substrate support 110.

[0042] In some implementations, and such as Figure 5 As depicted, the dielectric deposition ring 208 and dielectric plate 206 can be configured to overlap to further reduce any gaps and / or provide a more complex path (e.g., no line of sight) between the dielectric deposition ring 208 and dielectric plate 206. The overlapping and spiraling path between the dielectric deposition ring 208 and dielectric plate 206 further reduces the risk of deposition occurring on the substrate support 110 at locations between the dielectric deposition ring 208 and dielectric plate 206. For example, as... Figure 5 As shown, the dielectric plate 206 further includes an outer wall 502 extending downward from its lower surface and a flange 504 extending outward from the lower portion of the outer wall 502. The dielectric deposition ring 208 further includes a groove 506 disposed along the lower inner edge of the dielectric deposition ring 208. The flange 504 is at least partially disposed within the groove 506. The innermost fin 214 of the plurality of fins 210 may be configured to contact the outer wall 502, or as... Figure 5 As shown, a gap may exist between the innermost fin 214 and the outer wall 502. Although Figure 5 The diagram is not shown, but a groove 224 can be provided along the lower outer edge of the dielectric deposition ring 208.

[0043] In some implementations, and such as Figure 6 As depicted, the dielectric deposition ring 208 and dielectric plate 206 can be manufactured as a single unit or a single component (e.g., made from a single piece of material, or from separate pieces bonded or otherwise coupled together to eliminate any gaps between the dielectric deposition ring 208 and dielectric plate 206). This monolithic construction eliminates the risk of deposition occurring on the substrate support 110 in the location between the dielectric deposition ring 208 and dielectric plate 206.

[0044] In some implementations, and such as Figure 2 , Figure 3 , Figure 6 and Figure 7 As depicted, the processing kit 124 may further include a shadow clamp 220 configured to rest on top of the dielectric deposition ring 208. The shadow clamp 220 advantageously secures the dielectric deposition ring 208 (or an integrated dielectric deposition ring 208 and dielectric plate 206) to the substrate support 110 by gravity without bolts or clamps. The shadow clamp 220 further advantageously restricts or prevents material deposition on the dielectric deposition ring 208 (or the combination of dielectric plate 206 and dielectric deposition ring 208) from accumulating along the outer edge of the dielectric deposition ring 208 and short-circuiting to the underlying substrate support 110. The shadow clamp 220 has a central opening larger than the inner portions of the dielectric plate 206 and dielectric deposition ring 208. The shadow clamp 220 has a lower surface configured to rest on the outer surface of the dielectric deposition ring 208. In some embodiments, the shadow clamp 220 has a width such that the outer edge of the shadow clamp 220 extends beyond the outer edge of the dielectric deposition ring 208. In some embodiments, the shadow clamp 220 includes a groove 222 disposed along the lower inner edge of the shadow clamp 220. In some embodiments, the shadow clamp 220 further includes a groove 224 disposed along the lower outer edge of the shadow clamp 220 between the shadow clamp 220 and the dielectric deposition ring 208. Although Figure 5 Not shown in the diagram, the shadow clamp 220 may also be provided in this embodiment.

[0045] In some implementations, and such as Figure 2 , Figure 3 and Figure 6 As depicted, the radially inward upper edge 226 of the shaded fixture 220 may be rounded to reduce or prevent any electric arcing during processing, which could occur if a sharper edge is provided. In some embodiments, including any disclosed herein, and as... Figure 7As illustrated in the illustration, the shadow fixture 220 may include an inwardly extending lip 702. The inwardly extending lip 702 may define an innermost diameter or size of the shadow fixture 220 that is smaller than the corresponding diameter or size of the substrate 116. The inwardly extending lip 702 is generally sufficiently spaced from the outer edge 212 of the substrate 116 (e.g., disposed above it and measured as the shortest straight-line distance between any edge of the inwardly extending lip 702 and the outer edge 212 of the substrate 116) to minimize or prevent arcing during processing. The inwardly extending lip 702 may also include a rounded innermost edge 704 to reduce or prevent arcing during processing. Typically, the configuration of the shadow fixture 220 relative to the dielectric deposition ring 208 and the substrate 116 may be selected to minimize material accumulation on the dielectric deposition ring 208.

[0046] The processing kit 124 is configured to completely or substantially completely cover at least the upper surface of the substrate support 110 (e.g., support surface 202 and outer flange 204). In some embodiments, the dielectric plate 206 and the dielectric deposition ring 208 together completely or substantially completely cover at least the upper surface of the substrate support 110. In some embodiments, the dielectric plate 206, the dielectric deposition ring 208, and the shadowing fixture together completely or substantially completely cover at least the upper surface of the substrate support 110.

[0047] In some embodiments, the upper surfaces of one or both of the dielectric deposition ring 208 or the shadow fixture 220 may be textured to increase surface roughness, thereby enhancing the adhesion of the material to the dielectric deposition ring 208 and / or the shadow fixture 220. The selected surface roughness may be achieved through appropriate texturing or coating techniques, such as shot peening, plasma spraying, etc.

[0048] While the foregoing describes an implementation of this disclosure, other and further implementations of this disclosure may be designed without departing from its basic scope.

Claims

1. A processing kit for a substrate support, the processing kit comprising: A dielectric plate having a lower surface configured to cover a support surface of the substrate support and an upper surface configured to support the substrate. and A dielectric deposition ring surrounds the dielectric plate and is configured to cover a portion of the substrate support disposed radially outward from the support surface.

2. The processing kit of claim 1, wherein the dielectric deposition ring further comprises: Multiple fins extending from the upper surface of the dielectric deposition ring.

3. The processing kit of claim 2, wherein the innermost fin of the plurality of fins extends to a height above the upper surface of the dielectric plate.

4. The processing kit of claim 2, wherein at least one of the plurality of fins has at least one of a height or width different from that of another of the plurality of fins.

5. The processing suite as claimed in claim 2, wherein, In the direction of radial outward movement, each of the plurality of fins has a progressively decreasing height.

6. The processing kit of claim 2, wherein the fins in the plurality of fins are not uniformly spaced.

7. The processing kit of claim 2, wherein at least one of the plurality of fins is configured not to be parallel to the vertical central axis of the processing kit.

8. The processing suite as claimed in any one of claims 1 to 7, wherein the processing suite further comprises at least one of the following: A groove, the groove being provided along the lower outer edge of the dielectric plate; or A groove is provided along the lower inner edge of the dielectric deposition ring.

9. The processing suite of any one of claims 1 to 7, wherein the processing suite further comprises: A shadow fixture having a central opening larger than the interior of the dielectric plate and the dielectric deposition ring, the shadow fixture having a lower surface configured to rest on the exterior of the dielectric deposition ring, and the shadow fixture further having a width such that the outer edge of the shadow fixture extends beyond the outer edge of the dielectric deposition ring.

10. The processing suite of claim 9, further comprising: A groove is provided along the lower inner edge of the shadow clamp.

11. The processing kit of any one of claims 1 to 7, wherein the dielectric plate further includes an outer wall extending downward from the lower surface and a flange extending outward from the lower portion of the outer wall, wherein the dielectric deposition ring further includes a groove disposed along the lower inner edge of the dielectric deposition ring, and wherein the flange is at least partially disposed within the groove.

12. The processing kit of any one of claims 1 to 7, wherein the dielectric plate and the dielectric deposition ring are a single component.

13. An apparatus for processing a substrate, the apparatus comprising: A substrate support member having a support surface and an outwardly disposed flange extending outwardly from the support surface, wherein the support surface is raised relative to the outwardly disposed flange; and A processing kit, disposed on top of the substrate support, comprises: A dielectric plate having a lower surface covering the supporting surface and an upper surface configured as a supporting substrate; and A dielectric deposition ring surrounds the dielectric plate and covers the outer flange.

14. The apparatus of claim 13, wherein the dielectric deposition ring further comprises a plurality of fins extending from the upper surface of the dielectric deposition ring, and wherein at least one of the following: The innermost fin of the plurality of fins extends to a height above the upper surface of the dielectric plate; At least one of the plurality of fins has at least one different height or width from another of the plurality of fins; In the direction of radial outward movement, each of the plurality of fins has a progressively decreasing height; The fins in the plurality of fins are not evenly spaced; or At least one of the plurality of fins is configured not to be parallel to the vertical central axis of the processing kit.

15. The apparatus of any one of claims 13 or 14, wherein the apparatus further comprises at least one of the following: A groove, the groove being provided along the lower outer edge of the dielectric plate; or A groove is provided along the lower inner edge of the dielectric deposition ring.

16. The apparatus of any one of claims 13 or 14, wherein the apparatus further comprises: A shadow fixture having a central opening larger than the interior of the dielectric plate and the dielectric deposition ring, the shadow fixture having a lower surface configured to rest on the exterior of the dielectric deposition ring, and the shadow fixture further having a width such that the outer edge of the shadow fixture extends beyond the outer edge of the dielectric deposition ring.

17. The apparatus of claim 16, further comprising: A groove is provided along the lower inner edge of the shadow clamp.

18. The apparatus of any one of claims 13 or 14, wherein the dielectric plate further comprises an outer wall extending downward from the lower surface and a flange extending outward from the lower portion of the outer wall, wherein the dielectric deposition ring further comprises a groove disposed along the lower inner edge of the dielectric deposition ring, and wherein the flange is at least partially disposed within the groove.

19. The apparatus of any one of claims 13 or 14, wherein the dielectric plate and the dielectric deposition ring are a single component.

20. A physical vapor deposition chamber, the physical vapor deposition chamber comprising: The main body of the chamber; A cover assembly coupled to the chamber body and configured to support one or more targets for depositing one or more materials onto a substrate during use; A substrate support member disposed within the chamber body opposite the cover assembly, the substrate support member having a supporting surface and an outwardly extending flange from the supporting surface, wherein the supporting surface is raised relative to the outwardly extending flange; and A processing kit disposed on top of the substrate support, the processing kit being as described in any one of claims 1 to 7.

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