Microscanner system, methods and stacks for manufacturing it, and image projection device

Abstract

This invention relates to a microscanner system for projecting electromagnetic radiation onto an observation field, particularly a microscanner system for projecting electromagnetic radiation onto an observation field via imaging. The microscanner system comprises a substrate stack having multiple substrate layers stacked on top of each other along a stacking direction. A radiation source for generating electromagnetic radiation, particularly one or more laser beams, is disposed in or on a first substrate layer of the substrate stack. A second substrate layer of the substrate stack includes a microelectromechanical system (MEMS) having at least one deflection element disposed in the radiation path of the electromagnetic radiation and suspended in a manner capable of oscillating about at least one oscillation axis for variable deflection of at least one electromagnetic beam emitted by the radiation source. The microscanner system is manufactured by dicing from a stack configured as a substrate stack or layer arrangement, allowing for fabrication steps prior to dicing of multiple microscanner systems at the stack level, particularly at the wafer stack level. The image projection device comprises multiple multi-beam microscanner systems.

Description

Technical Field

[0001] This invention relates to a microscanner system for projecting electromagnetic radiation onto an observation field, particularly a single-beam or multi-beam microscanner system, and especially a microscanner system for projecting electromagnetic radiation onto an observation field via imaging. The invention also relates to methods for manufacturing multiple such microscanner systems and substrate stacks that appear as intermediate products in the corresponding methods. Background Technology

[0002] A microscanner, also specifically referred to in technical terms as a "MEMS scanner," "MEMS mirror," or "micromirror," or in English as a "microscanner," "micro-scanning mirror," or "MEMS mirror," is a microelectromechanical system (MEMS), more specifically a micro-opto-electromechanical system (MOEMS), derived from a category of micromirror actuators used for the dynamic modulation of electromagnetic radiation, particularly visible light. Depending on the structural type, the modulation motion of a single mirror can be translation or rotation about at least one axis. In the first case, a phase-shifting effect is achieved; in the second case, incident electromagnetic radiation is deflected to a direction dependent on the current orientation of the mirror. Furthermore, microscanners in which the modulation motion of a single mirror is at least rotational are also considered. Compared to mirror arrays (where the modulation of incident light is achieved via the cooperation of multiple mirrors on a single MEMS component), modulation in a microscanner is typically generated via a single mirror for each MEMS component (microscanner).

[0003] Therefore, microscanners can be used to deflect electromagnetic radiation to modulate electromagnetic beams, particularly laser beams, which are incident on a deflecting element (“mirror”) relative to its deflection direction. This can be particularly used to achieve lissajous projection of the beam into an observation field. In this way, sensory imaging tasks can be achieved, or display functions can be realized. Additionally, such microscanners can be used to advantageously irradiate materials, particularly for processing them. Other possible applications are in the fields of lighting or illuminating certain open or enclosed spaces or areas of space using electromagnetic radiation, such as in the realm of headlamp applications.

[0004] In many cases, the microscanner consists of a mirror plate (deflector plate) laterally suspended on a spring that can be elastically extended. Distinctions are made between single-axis, dual-axis, and multi-axis mirrors. A single-axis mirror should preferably be suspended only so that it can rotate about a single axis, wherein the rotation, particularly rotational oscillation, can rotate about a corresponding number of different axes (oscillation axes), particularly simultaneously about a corresponding number of different axes.

[0005] Therefore, microscanner systems for deflecting electromagnetic beams can particularly have biaxial microscanners, i.e., microscanners with two different, non-parallel, and in particular, mutually orthogonal oscillation axes. However, microscanner systems can also have combinations of two or more individual microscanners, particularly single-axis microscanners, arranged, especially in series, such that the incident beam can be continuously deflected by the individual microscanners of the microscanner system to produce two-dimensional deflection patterns, such as raster scanning or Lissajous figures. In microscanner systems with combinations of two or three single-axis microscanners, their non-parallel oscillation axes can be orthogonal to each other, particularly in pairs.

[0006] In the case of imaging sensors and display functions, multi-axis microscanner systems are used to deflect electromagnetic radiation from any other electromagnetic radiation source, such as laser beams or shaping beams, at least in two dimensions (e.g., horizontally and vertically), thereby scanning or illuminating the surface of an object within the observation field. Specifically, this can be accomplished by scanning a laser beam across a rectangular surface projected onto the observation field. Therefore, in these applications, microscanner systems with at least one dual-axis microscanner or with multiple, particularly two, single-axis or multi-axis microscanners connected in series in the optical path are employed.

[0007] A microscanner system can also have multiple microscanners, which can be single-axis or multi-axis, especially if these microscanners are not connected in series as defined above, but are individually designed to deflect their own associated bundles. For example, a microscanner system can have multiple microscanners that can operate simultaneously, particularly multi-axis, and can operate independently or in a coordinated manner according to a defined scheme, each deflecting its own associated bundle. Such a microscanner system is referred to herein as a "multi-bundle microscanner system".

[0008] In principle, the wavelength range of the radiation to be deflected can be selected from the entire spectrum of shortwave UV radiation, through the VIS range, NIR range, IR range, FIR range to longwave terahertz and radar radiation. In particular, the radiation source for electromagnetic radiation, or each radiation source itself, can be a component of a multi-beam microscanner system, which is partly within the scope of the present invention.

[0009] For many different applications of microscanners, particularly in the so-called "wearable" field—electronics worn on the body—very compact and inexpensive laser projectors are required. A key construction for this purpose includes one or more microscanners for beam deflection and one or more laser sources. Potential wearables include, in particular, virtual reality (VR) glasses, augmented reality (AR) glasses, mixed reality (MR) glasses, and other wearable imaging devices. The colors of the light generated by the light source can be, in particular, primary colors of a color model for a color space within the optical range of the spectrum, and, for example, in the case of the RGB color model, can be provided by three laser sources, one each for red, yellow, and blue light.

[0010] In some known configurations of microscanner systems, the laser components of different colors from a multicolor laser source (multiple individual lasers of corresponding different colors) are hermetically encapsulated in their own color-separated TO packages. Because these packages are typically large and expensive, only a limited degree of miniaturization can be achieved.

[0011] In the conventional production of microscanner systems, all components of the microscanner system are assembled individually to form the system. This even applies to components such as integrated semiconductor circuits, which have previously been processed and produced in parallel batches on semiconductor substrates. Here, they are first diced into chips and then precisely mounted at the chip level to be placed onto the common carrier components of the microscanner system. Therefore, in addition to MEMS mirrors or multiple MEMS mirrors, components of a microscanner system may specifically include heat sinks, secondary carriers, optics, and laser chips, all of which must be handled, aligned, mounted, contacted, and secured individually within the scope of microscanner system production. Summary of the Invention

[0012] The object of this invention is, in particular, with respect to its efficient production capabilities and / or miniaturization capabilities, to provide improved single-beam and multi-beam microscanner systems and methods for their respective production.

[0013] The solution to this objective is achieved based on the teachings of the independent claims. Various embodiments and extensions of the solution are the subject of the dependent claims.

[0014] The first aspect of the solution proposed in this paper relates to a microscanner system for projecting electromagnetic radiation, particularly by imaging, into an observation field, specifically in a spatial angle originating from the microscanner system. The microscanner system comprises a substrate stack having multiple substrate layers stacked on top of each other along a stacking direction. In or on the first substrate layer of the substrate stack, N radiation sources, particularly laser radiation sources, are arranged, each having one or more lasers for generating electromagnetic radiation, such as one or more, particularly different colored laser beams, where N ≥ 1. For simplicity, in some of the following paragraphs, the cases of N = 1 and N > 1 are treated separately: - In the case of N=1, the second substrate layer of the substrate stack includes a microelectromechanical system (MEMS) having at least one deflection element arranged in the radiation path of electromagnetic radiation and suspended about at least one oscillation axis in a rotational oscillation manner for variable deflection of at least one electromagnetic beam emitted by the radiation source.

[0015] - In the case where N>1, the microscanner system is multi-beam and the substrate stack is monolithic. N radiation sources are respectively configured to emit corresponding electromagnetic beams (130-i) as radiation components of electromagnetic radiation (130). For each radiation source (120), the second substrate layer (112) of the substrate stack includes an associated MEMS having at least one deflection element (112a) arranged in the radiation path of the electromagnetic beam (130i) of the corresponding radiation source and suspended about at least one oscillation axis in a rotational oscillating manner for deflection of the electromagnetic beam emitted by the corresponding radiation source (120) in a variable direction.

[0016] As used herein, the term "substrate layer" refers to a homogeneous or heterogeneous material layer. Within the temperature range intended for use in the microscanner system, the material layer is typically in a solid state. In particular, it can have a plate-like shape, at least segmented, and depending on its function, it can be made, in particular, of a semiconductor wafer or of a material that is at least partially optically transparent in the wavelength range used for projection in the microscanner system, such as a glass wafer or a plastic wafer that is at least partially transparent.

[0017] As used herein, the term "radiation source" refers to an electromagnetic radiation source to be deflected, and in particular scanned, by a microscanner system. Specifically, it can be a laser radiation source. Theoretically, the wavelength range of the radiation can be selected from the entire spectrum of short-wave UV radiation, through the VIS, NIR, IR, and FIR ranges, to long-wave terahertz and radar radiation. As used herein, the term "deflecting element" specifically refers to a body having a reflective surface (mirror surface) that is sufficiently smooth to maintain the parallelism of reflected electromagnetic radiation (e.g., visible light) under the law of reflection and thus allow for image formation. For this purpose, the roughness of the mirror surface must be less than approximately half the wavelength of the electromagnetic radiation. Specifically, a roughness with an average roughness value Ra ≤ 1000 nm, preferably Ra ≤ 100 nm, and more preferably Ra < 5 nm is suitable. Here, the average roughness value represents the average distance from the measurement point on the surface to the centerline. Therefore, the average roughness value corresponds to the arithmetic mean of the absolute deviations from the centerline, and is specifically defined in the DIN EN ISO 4287:2010 standard. The deflecting element may be specifically designed as or comprise a mirror plate having at least one mirror surface. In particular, the mirror surface itself may be made of a material different from the rest of the deflecting element, for example, of a deposited metal.

[0018] As used herein, the term "monosome," in relation to a bulk (particularly a substrate stack), refers to a bulk that is monolithic, such that the various substrates or layers of the stack are firmly connected to each other, thereby forming a unit cell. Components formed in the substrate stack where necessary, particularly radiation sources and MEMS, are in this case integrally formed with or part of the substrate stack, specifically such that the substrate stack completely defines these components. In particular, all MEMS associated with each radiation source can also be combined into a single monolithic MEMS, wherein an associated deflection element is formed for each radiation source.

[0019] As may be used herein, the terms “comprising,” “including,” “containing,” “having,” “with,” “or any other variation thereof” are intended to cover non-exclusive inclusion. For example, a method or apparatus that includes or has a series of elements is not necessarily limited to those elements, but may include other elements not expressly listed or inherent to the method or apparatus.

[0020] Furthermore, unless explicitly stated to the contrary, "or" refers to an inclusive "or" rather than an exclusive "or". For example, conditions A or B satisfy one of the following conditions: A is true (or exists) and B is false (or does not exist), A is false (or does not exist) and B is true (or exists), and both A and B are true (or exist).

[0021] As used herein, the terms “a” or “an” are defined as meaning “one or more”. The terms “another” and “additional” and any other variations thereof should be understood to mean “at least one additional”.

[0022] The term “multiple” as used in this article should be understood to mean “two or more”.

[0023] The terms “first,” “second,” “third,” and similar terms used in the specification and claims are used to distinguish similar or otherwise equivalent elements and do not necessarily describe a sequence, spatial, or temporal order. It should be understood that such terms are interchangeable where appropriate, and embodiments of the apparatus for achieving the objectives of the invention described herein may also operate in sequences different from those described or shown herein.

[0024] The terms "configuration" or "setting" as used herein to perform a specific function (and its corresponding modifications) should be understood to mean that the corresponding device or its components are already provided in the design or setup to perform the function, or that it is at least settable (i.e., configurable) so that it can perform the function after it has been set accordingly. For example, configuration can be performed by setting parameters of the processing flow or by switches for activating or deactivating functions or settings. In particular, the device may have several predetermined configurations or operating modes, such that the configuration can be performed by selecting one of these configurations or operating modes.

[0025] - In the case of N=1, particularly due to its stacked structure, microscanner systems according to the first aspect can be advantageously produced in a parallel processing procedure, wherein a substrate stack is assembled from substrates corresponding to the substrate layers of the microscanner system, thereby forming multiple microscanner systems simultaneously and side-by-side by assembling the substrate stack and from which multiple microscanner systems can be obtained by subsequent dicing. Therefore, microscanner systems can be produced, in particular, in a “wafer-level” parallel processing procedure, wherein a portion or at least a significant portion of a corresponding individual component of the microscanner system is formed in the layered structure of the substrate stack, particularly as a single substrate or its substrate layer. This also eliminates the need for individual packaging of components before integrating them into the microscanner system, thus achieving space savings and therefore a particularly compact configuration and production efficiency (especially in terms of integration level). This also eliminates the need for individual packaging of individual components of the microscanner system (such as laser sources).

[0026] - When N>1, especially due to its stacked structure, multi-beam microscanner systems according to the first aspect can be advantageously produced in a parallel processing procedure, wherein a layer arrangement is assembled from substrates corresponding to the substrate layer of the multi-beam microscanner system, so that multiple multi-beam microscanner systems can be simultaneously and side-by-side formed by assembling the layer arrangement and obtained therefrom by subsequent dicing. Therefore, multi-beam microscanner systems can be produced, in particular, in a “wafer-level” parallel processing procedure, wherein all or, in any case, subsets of the corresponding individual components of the multi-beam microscanner system are formed in the layered structure of the layer arrangement. This also eliminates the need for individual packaging of components before integrating them into the multi-beam microscanner system, thus achieving space savings and therefore a particularly compact configuration and production efficiency (especially in terms of integration level). This also eliminates the need for individual packaging of individual components (such as laser sources) of the multi-beam microscanner system. Since, when N>1, a multi-beam microscanner system can generate multiple electromagnetic beams, especially multiple electromagnetic beams simultaneously, and deflect them individually or in a coordinated manner, it is possible to realize microprojectors with particularly high radiation power and thus highly variable radiation patterns.

[0027] In the following text, regarding the case where N>1, the term "layer arrangement" is used for a stack of substrates in which multiple microscanner systems are formed, each in a multi-bundle configuration. A layer arrangement can be created, in particular, by stacking substrates on top of each other, each of which is fabricated from a wafer, particularly (at least primarily) from a semiconductor material such as silicon. However, the term "layer arrangement" also includes arrangements resulting from dividing, and in particular dicing, such a stack of substrates, where, after dicing, such an arrangement comprises two or more microscanner systems. For example, rectangular portions can be cut from a wafer stack having a circular cross-section (perpendicular to the stacking direction), each comprising multiple microscanner systems. By arranging multiple such blocks in a grid pattern, such rectangular portions are particularly suitable as "blocks" of a modular image projection device. This allows for the efficient creation of image projection devices, especially those with large areas of their own.

[0028] Here, in contrast to the term "layer arrangement," the term "substrate stack" is specifically used for the layer structure within a single microscanner system. In the aforementioned parallel processing at the "wafer level," before obtaining multiple microscanner systems from them through dicing, for example, a sawing process, a layer arrangement can first be generated, whose corresponding layer structures form their respective substrate stacks, which in turn are obtained from substrates that are segments of the layer arrangements obtained during the dicing process, stacked one another.

[0029] Various exemplary embodiments of the microscanner system are described below. In each case, unless explicitly excluded or technically impossible, these exemplary embodiments may be combined with each other as needed, and with other aspects of the apparatus for achieving the objectives of the invention, as will be described below. Unless otherwise specified, the embodiments are applicable to both N=1 and N>1 cases.

[0030] In some embodiments: - With N=1, the radiation source is configured to emit the electromagnetic radiation it generates, at least primarily as a collimated beam with a beam direction deviating from the stacking direction of the substrate stack by an angle of at most 10°. The beam direction can approximately, at least substantially, coincide with the stacking direction, particularly deviating from it by no more than 1°. This allows for a particularly compact configuration, as the entire radiation path within the corresponding microscanner system traverses the stacked structure. Therefore, the stacked structure, based on its design, particularly through possible integration of optical elements, can also be used for targeted beam guiding and beam shaping; - When N>1, at least one of the multi-beam microscanner systems (100) or radiation sources (120) is configured to emit electromagnetic radiation generated therefrom, at least primarily as a collimated beam having a beam direction deviating from the stacking direction (101) of the substrate stack by an angle of at most 10°, particularly no more than 1°. Furthermore, in this way, particularly when the multi-beam microscanner system is configured as a whole to emit electromagnetic radiation generated therefrom, at least primarily as a collimated beam, particularly high radiation intensity can be achieved, and in the case of radiation of different colors from two or more radiation sources, a collimated beam with corresponding mixed colors can also be generated.

[0031] In some embodiments, the substrate stack includes at least one additional substrate layer, in or on the substrate layer.

[0032] - In the case of N=1, a beam-shaping optical unit is formed for beam shaping, specifically for diffraction or refraction, which is configured to shape, in particular collimate, the at least one electromagnetic beam before and / or after it is deflected by a deflection element.

[0033] - In the case of N>1, for each radiation source, a beam-shaping optical unit, particularly for diffraction or refraction, is formed in association with it individually or together with at least one other radiation source for beam shaping. It is configured to shape, in particular collimate, the electromagnetic beam (130-i) of the corresponding radiation source (120) before and / or after it is deflected by a deflection element (112a) associated with the corresponding radiation source.

[0034] Providing one or more beam-shaping layers within the substrate stack allows for the fulfillment of any requirements regarding the beam distribution of electromagnetic radiation projected into the observation field by the microscanner system through the substrate stack, particularly through components belonging to and therefore to the microscanner system itself, thus eliminating the need for external optics for this purpose. This also reduces overall space requirements and thus enables miniaturization of the projection scheme. Furthermore, this allows beam shaping to be performed in close spatial proximity (i.e., at short distance) to the respective radiation sources, which can be particularly used to improve the optical properties of the radiation from the microscanner system itself or that can be projected into the observation field. According to a variation, in the case of N>1, two or more radiation sources can share a common beam-shaping optical unit, meaning that the beams of these radiation sources pass through the same beam-shaping optical unit. This eliminates the need to provide a separate beam-shaping optical unit associated with each radiation source. In particular, these radiation sources can be selected such that they differ in color or wavelength and span a color space, for example, the RGB color space.

[0035] In some embodiments, the substrate stack, as one such additional substrate layer, includes at least one third substrate layer having

[0036] - In the case of N=1: a first beam-shaping optical unit is formed therein for beam shaping, wherein the first beam-shaping optical unit is configured to shape the at least one electromagnetic beam before the at least one electromagnetic beam is deflected by the deflection element; and

[0037] - In the case of N>1: For each radiation source (120), a first beam-shaping optical unit is formed therein for beam-shaping alone or together with at least one other radiation source, wherein the first beam-shaping optical unit is configured to shape the electromagnetic beam (130-i) of the corresponding associated radiation source (120) before it is deflected by the deflection element (112a) associated with the corresponding radiation source (120).

[0038] In some embodiments, in addition to or instead of at least one third substrate layer, the substrate stack as one such additional substrate layer includes at least one fourth substrate layer, said at least one fourth substrate layer having

[0039] - In the case of N=1: a second beam-shaping optical unit is formed therein for beam shaping, wherein the second beam-shaping optical unit is configured to shape the at least one electromagnetic beam after the at least one electromagnetic beam has been deflected by a deflecting element; and

[0040] - In the case of N>1: For each radiation source (120), a second beam-shaping optical unit (116a, 118) is formed therein for beam shaping, wherein the second beam-shaping optical unit (116a, 118) is respectively configured to shape the electromagnetic beam (130) of the corresponding associated radiation source after being deflected by a deflection element (112a) associated with the corresponding radiation source (120).

[0041] In both of the above embodiments (third / fourth substrate layers), and particularly in the case of a combination of at least one third substrate layer and at least one fourth substrate layer, beam shaping may specifically include collimating (corresponding) beams. This allows for optimization of the imaging properties of the microscanner system, particularly the achievable image sharpness.

[0042] In some embodiments, - In the case of N=1, at least one of the beam-shaping optical units has an axial prism, a parabolic mirror, and / or a plane deflector for at least partial beam shaping of the electromagnetic beam; and - In the case of N>1, at least one of the beam-shaping optical units associated with the corresponding radiation source (120) has an axicon, a parabolic mirror and / or a plane deflector, respectively, for at least partial beam shaping of the electromagnetic beam emitted by the associated radiation source (120).

[0043] When using at least one axial prism, the corresponding axial prism can be specifically designed as a reflecting axial prism. In all cases mentioned, the corresponding beam-shaping optical unit can be arranged such that it guides radiation generated by or emitted by the corresponding radiation source to the deflecting element by means of mirror reflection at the beam-shaping optical unit, particularly to the mirror surface of the deflecting element, which is arranged on the side of the deflecting element opposite to the radiation source (when it is in a non-deflected, stationary position). Specifically, the deflecting element can have a central opening through which the beam emitted by the associated radiation source can at least partially pass to the beam-shaping optical unit, where it is transformed and guided onto the mirror surface of the deflecting element. In particular, beam shaping can include generating an annular beam cross-section. Thus, on the one hand, a desired beam shape can be generated using one or more combinations of beam-shaping optical units of the types described above, and / or on the other hand, a particularly compact configuration can be achieved using one or more combinations of beam-shaping optical units of the types described above, since the beam does not necessarily need to be guided laterally around the deflecting element. However, alternatively, a beam feedthrough can be provided in the substrate forming the deflection element at a location different from the deflection element, through which a beam from the associated radiation source can at least partially reach the radiation optics without first passing through or impacting the deflection element.

[0044] One or more beam-shaping optical units in a beam-shaping optical unit can also be configured as collimators. Collimators can be specifically designed to collimate only along a single spatial dimension perpendicular to the beam direction; that is, for example, transforming a circular beam cross-section into a linear, particularly straight, beam cross-section. This can be particularly used to achieve corresponding collimation of each oscillation axis of the deflection element. In another variation, the collimator can be designed to transform a diverging elliptical beam into a collinear beam with a circular beam cross-section.

[0045] In some embodiments, the substrate stack includes at least one fifth substrate layer, wherein driver circuitry is configured therein or on it.

[0046] - In the case of N=1: electrical control of the radiation source, and / or driver circuitry for controlling the rotational oscillating motion of the deflection element about at least one oscillation axis; and

[0047] - In the case of N>1: electrical control for one or more of the radiation sources (120), and / or at least one driver circuit (102a) for one or more drives to control the rotational oscillating motion of one or more of the deflection elements (112a) about at least one of their respective oscillation axes.

[0048] Specifically, the fifth substrate layer, or each fifth substrate layer, can be a semiconductor substrate, in which (one or more) driver circuits are designed as integrated circuits. The fifth substrate layer can be directly interconnected and wired to, in particular, the first substrate layer, either directly or indirectly via an interconnect stage that serves as another substrate layer, such that the spatial distance between the radiation source or corresponding radiation source and the driver circuit or corresponding driver circuit used to control it, and therefore the resistance and / or electromagnetic interference (from external sources or through induction, etc.), can be kept very low. Here, in the case where N>1, in particular at least one driver circuit can be divided into driver circuits for multiple, in particular all, radiation sources or drivers, for example, divided into integrated circuits, or divided into separate circuits for each radiation source or driver, in particular also by means of separate integrated circuits that are separate from each other.

[0049] In some embodiments, viewed along the stacking direction, the first substrate layer is arranged between the fifth substrate layer and the second substrate layer. In particular, the emission direction of electromagnetic radiation can therefore be defined as pointing away from the first and fifth substrate layers, such that the normally opaque fifth substrate layer (especially in the case of semiconductor materials) does not interfere with the radiation path.

[0050] Specifically, in some variations of these embodiments, - In the case of N=1: (i) the fifth substrate layer includes a driver circuit for driving the oscillating motion of the deflection element; (ii) the second substrate layer includes at least one actuator for driving the oscillating motion of the deflection element; and (iii) the first substrate layer includes wires passing through it for direct or indirect electrical connection between the actuator and the driver circuit for controlling the drive; and - In the case of N>1: (i) for each deflection element, the fifth substrate layer includes an associated driver circuit for driving the oscillating motion of the respective deflection element; (ii) for each deflection element, the second substrate layer includes at least one actuator for driving the oscillating motion of the respective deflection element; and (iii) for each actuator, the first substrate layer includes a wire passing through it for direct or indirect electrical connection of the actuator to the driver circuit for controlling the drive.

[0051] In both cases, the lines can be specifically formed as so-called "vias," for example, as silicon vias (TSVs) in the case of one or more silicon layers in a substrate stack, or as glass vias (TGVs) in the case of one or more glass layers in a stack. These variations also facilitate compact designs, particularly in the lateral direction (i.e., in the layer plane), since the lines pass through the first substrate layer.

[0052] In some embodiments, the substrate stack includes at least one sixth substrate layer, through which...

[0053] - In the case of N=1: the first cavity formed in the substrate stack is hermetically sealed; and

[0054] - In the case of N>1: In the substrate stack, for each deflection element, a first cavity (112b) is formed associated with it and it is hermetically sealed.

[0055] Specifically, in both cases, the deflection elements, particularly at least one of them, can be arranged within a hermetically sealed first cavity and suspended in a manner capable of oscillating and rotating about at least one oscillation axis. Thus, the corresponding deflection elements are well protected from undesirable external influences, such as chemical or mechanical effects or interference radiation, and this design also facilitates a particularly compact configuration of the microscanner system. In particular, the cavity can be evacuated and thus used as a vacuum seal to reduce or minimize, depending on the quality of the vacuum, the air frictional resistance that would otherwise occur during the oscillating motion, and in particular, to at least substantially completely avoid them.

[0056] In some embodiments, - In the case of N=1: the radiation source is at least partially arranged within a second cavity formed in the first substrate layer; and - In the case of N>1: at least one of the radiation sources is arranged at least partially in the second cavity, which is formed individually or together for each of the radiation sources in the first substrate layer.

[0057] This allows for the same or similar advantages to those of the first cavity with respect to the corresponding radiation source.

[0058] Specifically, in some of these embodiments, a surface portion of the sidewall of the second cavity or at least one second cavity includes at least one conductive layer, particularly a metal layer, for generating a corresponding electrical connection for the radiation source or at least one radiation source disposed at least partially within the respective second cavity. This also allows for particularly space-saving electrical connections for the radiation source.

[0059] The term "electrical conductivity" (and its variations) is used to refer to the physical quantity that indicates the strength of an electric current a material can conduct. The terms "conductive" or "electrically conductive" in this document refer to a conductivity of at least 10. 6 Conductivity in S / m (at 25°C).

[0060] In some embodiments, - In the case of N=1: either the first or second chamber is evacuated, or the first and / or second chamber contains gas at a pressure lower than normal, the gas being at least primarily composed of a protective gas; and - In the case of N>1: at least one first chamber or second chamber is evacuated or contains gas at a pressure lower than normal, the gas being at least primarily composed of a protective gas.

[0061] Therefore, the corresponding first and / or second cavities can be evacuated, i.e., containing a pressure of 10 Pa (10 -4 The gas pressure is either 1 bar or lower (no true vacuum is entirely acceptable). In the first chamber, this is particularly advantageous in achieving oscillations of the deflecting element with as little gas friction as possible, and therefore with minimal losses. Conversely, the second chamber focuses on other advantages such as corrosion resistance and prevention of radiation source contamination. In particular, it is also possible for one of the two chambers (e.g., the first chamber) to be evacuated, while the other chamber (e.g., the second chamber) is filled with a protective gas (especially at a pressure below normal).

[0062] In some embodiments, the microscanner system further includes: (i) a seventh layer and (ii) projection optics for imaging an intermediate image into the observation field.

[0063] - In the case of N=1: The seventh layer is arranged in the radiation path of the radiation source and is formed as a scattering screen or a matte screen, such that when the beam from the radiation source irradiates the seventh layer, an intermediate image is produced on the seventh layer; and

[0064] - In the case of N>1: The seventh layer is arranged in the corresponding radiation paths of at least two radiation sources and is formed as a scattering screen or a matte screen, such that when the seventh layer is irradiated with the beams of these at least two radiation sources, an intermediate image is produced on the seventh layer.

[0065] The seventh layer may be arranged along one or more radiation paths following one or more corresponding deflection elements, such that the intermediate image on the seventh layer is produced by a beam incident on the deflection elements or by an incident beam previously deflected at the associated deflection element. Subsequently, projection optics, particularly including projection lenses, are arranged such that they project the intermediate image created on the seventh layer onto the observation field in a transmission or reflection manner (i) directly or (ii) indirectly through one or more additional layers of the substrate stack.

[0066] In some embodiments, - In the case of N=1: the radiation source used to at least partially generate electromagnetic radiation has one or more of the following radiation emitters: edge-emitting laser, surface-emitting laser (vertical cavity surface-emitting laser, VCSEL), superluminescent diode (SLED), mini-LED, micro-LED; and - In the case of N>1: at least one of the radiation sources used to at least partially generate its corresponding electromagnetic beam has one or more of the following radiation emitters: edge-emitting laser, surface-emitting laser, superluminescent diode, Mini-LED, Micro-LED.

[0067] These radiation emitters can be applied or introduced onto a first substrate layer, such as a silicon substrate or another mechanically suitable support substrate, through a suitable transfer process.

[0068] In some embodiments, - In the case of N=1: the deflecting element has rotational symmetry with respect to an axis of symmetry extending parallel to the stacking direction, and the radiation source is configured such that the electromagnetic beam generated by it during its operation extends along the axis of symmetry of the deflecting element and passes through an opening therein; and - In the case of N>1: at least one deflecting element has rotational symmetry with respect to an axis of symmetry extending parallel to the stacking direction, and the radiation source associated with the corresponding deflecting element is configured such that the electromagnetic beam generated by it during its operation extends along the axis of symmetry of the associated deflecting element and passes through an opening therein.

[0069] Because the beam deflection around (one or more) of the respective deflection elements can be omitted, this design can also be used to implement particularly compact configurations. Furthermore, this also allows for configurations with overall high symmetry.

[0070] In some embodiments, - In the case of N=1: The microscanner system is configured such that during operation of the radiation source, the electromagnetic beam (130) generated therefrom passes through a deflection element and an opening in the second substrate layer to reach a reflective surface, where the beam is deflected onto the deflection element so as to be reflected there; and - In the case of N>1: The microscanner system is configured such that, for at least one radiation source, during its operation, the electromagnetic beam generated by it passes through an opening in a second substrate layer through an associated deflection element to a reflective surface, where the beam is deflected onto the deflection element so as to be reflected there.

[0071] This can include various advantages, particularly when the deflection element is in a stationary position, causing an incident angle other than 90° for a beam incident on the deflection element from the reflective surface, thereby specifically counteracting the occurrence of undesirable ghosting and / or glare effects. In some embodiments, one or more substrate layers, such as a first substrate layer and / or a second substrate layer, each include at least one alignment mark by which at least two substrate layers of the microscanner system are aligned with each other in a dimension extending laterally to the stacking direction. This allows for increased accuracy in the relative orientation of the different substrate layers, particularly regarding achieving high-precision alignment, where optical interference caused by misalignment (e.g., aberrations) is reduced to at least a negligible level.

[0072] In some embodiments, one or more substrate layers, such as a first substrate layer and / or a second substrate layer, each include at least one alignment accuracy feature, by which the accuracy of the relative alignment of at least two substrate layers of the microscanner system with respect to at least one spatial dimension (particularly orthogonal and / or along the stacking direction) can be determined. By means of said at least one alignment accuracy feature, the quality of the microscanner system or its precursor can be evaluated, particularly before the substrate stack or layer arrangement is partitioned into individual microscanner systems. This can also be particularly used to select such stacks or (after partitioning) such microscanner systems that do not meet predetermined quality criteria as demonstrated by the evaluation. This improves manufacturing efficiency because the selected substrate stacks or microscanner systems do not require further processing. It also ensures that products with misalignment are not shipped to the market undetected. As a quality criterion (e.g., permissible tolerance range), tolerances of up to 5 µm, preferably up to 1 µm, or even better, up to only 0.3 µm have proven effective, particularly for lateral accuracy (i.e., laterally, particularly orthogonal to the stacking direction). In the dimension along the stacking direction, tests have shown that a distance accuracy of up to 100 µm, preferably up to 10 µm, and more preferably up to 1 µm between consecutive substrate layers (or corresponding substrates arranged in layers prior to splitting) in a substrate stack has proven to be a quality standard.

[0073] In some embodiments, the microscanner system further includes one or more cooling elements that extend into or through at least two substrate layers and are formed of a material having increased thermal conductivity relative to its respective immediate environment within the substrate stack. Depending on the type of substrate layers used, the cooling elements may, in particular, have a metallic material filling in so-called silicon vias (TSVs) or glass vias (TGVs) as heat sinks. This allows heat, especially heat generated by radiation sources during operation, to be effectively dissipated within the microscanner system along the heat transfer path defined by the cooling elements, without requiring external stack cooling elements.

[0074] In some embodiments, for N>1, at least one of the radiation sources is configured to emit its corresponding electromagnetic beam in a wavelength range that is at least partially different from the wavelength range of the beam from at least one radiation source, particularly in a wavelength range that does not overlap with the wavelength range of the beam from at least one radiation source. This allows for the implementation of a multi-beam microscanner system that can present different colors in a time-dependent manner and / or as a mixture of colors, depending on the control of the radiation sources.

[0075] Specifically, for the case where N>1, the microscanner system can include at least two monochromatic radiation sources whose emission wavelengths are selected differently, such that they jointly cover at least a two-dimensional color space and thus extend across different colors. Subsequently, individual colors of the color space can be specifically selected, for example, by appropriately controlling the individual radiation sources and / or the MEMS of the microscanner system. Thus, such a multi-beam microscanner system forms a microprojector capable of presenting different colors in its projection area, particularly a microprojector with temporal and / or spatial variability. In this way, the multi-beam microscanner system can be designed, for example, as an RGB module, to at least partially present a color space based on the RGB color model.

[0076] In some embodiments, for N>1, the radiation sources are formed such that the beam directions of their respective collimated beams are parallel and adjacent to each other, such that the collimated beams of the radiation sources can be perceived in the observation field as adjacent, color-different sub-pixels of a pixel as a whole. Similar to LCD or LED displays, multi-color pixels can be generated during projection, where the pixel color perceptible to the observer is achieved through the cooperation of adjacent sub-pixels of different wavelengths or colors. Individual monochromatic sub-pixels, in particular the radiation sources and any associated optics, can be optimized in terms of their respective wavelengths, while the entire pixel can have multi-color capabilities due to the different wavelengths of its sub-pixels. However, it is also conceivable that sub-pixels share elements or are identical to each other, and are designed for broadband rather than just monochromatic wavelength ranges, which can also facilitate manufacturing. This can be applied to anti-reflective coatings (“AR coatings”) or so-called high-reflective coatings (“HR coatings”), where the sub-pixel-specific design will be quite challenging from a manufacturing perspective. Conversely, subpixel-specific designs for monochromatic wavelength optimization can be particularly applied to diffraction (grid-like) structures used for beam shaping, since these can often be produced side-by-side without problems (even during parallel processing) and only require adaptation of the corresponding subpixel wavelengths relative to the "grid constant".

[0077] In some embodiments, for the case where N>1, all radiation sources are configured to emit their respective electromagnetic beams, in particular (relative to radiation intensity I). ) at wavelength The radiation source emits monochromatic radiation primarily or even uniquely within a wavelength range of at most 100 nm, particularly at most 50 nm, that is the same for all radiation sources, or at the same wavelength for all radiation sources. This makes it possible to realize a projector powered by all radiation sources, thus having high radiant power over a specific narrow wavelength range. In particular, high radiant intensity can be achieved in the case of the collimated beam described above. In particular, the wavelength range can lie within the spectral range of a single primary color, i.e., within the spectral range of the spectrum, and is limited in such a way that all individual colors within that spectral range belong to the same primary color, such as blue, green, yellow, or red. For example, all radiation sources can emit their respective radiation within a single, common, narrowly defined wavelength range (e.g., green: for example 515 nm … 525 nm, blue: for example 415 nm … 435 nm, or red: for example 625 nm … 700 nm).

[0078] A second aspect of the apparatus for achieving the purpose of the invention relates to a stack having a plurality of substrates stacked on top of each other along a stacking direction, wherein, depending on the material of the substrates, the substrates are fastened to each other at respective interfaces of the respective adjacent substrates by corresponding bonding connections, such as wafer bonding connections, anodic bonding connections or eutectic bonding connections.

[0079] - In the case of N=1: the stack is a substrate stack, wherein multiple, particularly identical, microscanner systems according to the first aspect (for the case of N=1) are formed adjacent to each other, such that the microscanner systems can be obtained separately from the substrate stack by slicing (particularly by sawing or laser cutting). In each microscanner system, the corresponding substrate stack of the substrate layer contains or is formed by an associated segment of the substrate stack, wherein the substrates of the substrate stack respectively form one of the substrate layers; and

[0080] - In the case of N>1: The stack is a layer arrangement in which a plurality of corresponding multi-beam microscanner systems according to the first aspect (for the case of N>1) are formed adjacent to each other, such that the multi-beam microscanner systems can be obtained from the layer arrangement individually or in the form of at least two sets of two or more mutually adjacent microscanner systems by slicing (especially sawing or laser cutting). Each multi-beam microscanner system comprises a corresponding segment of the layer arrangement, such that the substrate region of the layer arrangement contained in the corresponding segment and stacked on top of each other is formed in one of the substrate layers of the microscanner system formed in the corresponding segment.

[0081] As with the already defined term "substrate layer," the term "substrate" as used herein refers to a homogeneous or heterogeneous material layer. Within the temperature range intended for use in the microscanner system, the material layer typically exists in a solid state. It may, in particular, have at least a partially plate-like shape. The term "substrate" as used herein refers to such a material layer, which is also part of multiple microscanner systems (especially all microscanner systems) in a substrate stack (in the case of n=1) or layer arrangement (in the case of n>1). Conversely, the term "substrate layer" is used to refer to such a material layer, which, after being separated from the substrate stack or layer arrangement, is only a part of one of the microscanner systems. Separation can be performed, in particular, using known methods for separating chips from semiconductor substrates, such as sawing or laser cutting. Specifically, separation can be achieved by separating the substrate stack or layer arrangement along a cutting line extending transversely to, and in particular orthogonally to, the stacking direction.

[0082] The term "substrate" can specifically refer to a wafer, such as a wafer made of semiconductor material or a material that is at least partially transparent (such as glass or plastic) in the wavelength range used for projection by a microscanner system. The shape of the main surface of the substrate (especially the wafer) can be particularly circular or rectangular, but other shapes are not excluded. In particular, a substrate stack (in the case of n=1) or layer arrangement (in the case of n>1) can comprise one or more semiconductor substrates and one or more glass substrates (the same applies to substrate stacks of multi-beam microscanner systems with respect to their substrate layers). Furthermore, it is possible, in addition to or in place of one or more glass substrates, to include a plastic substrate that is at least partially transparent in the relevant wavelength range in the substrate stack or layer arrangement. Such plastic substrates can be particularly formed as plastic optical wafers, i.e., containing one or more imaging optics. Such plastic substrates are generally more cost-efficient to manufacture than glass substrates. Advantageously, these can be arranged in substrate stacks or layer arrangements, especially where hermeticity requirements do not need to be met and subsequent high-temperature steps are not required during the fabrication process of the substrate stack or layer arrangement. Subsequently, one or more substrates made of plastic materials with additional optical functions, such as "relay optics" or "beam-expanding optics," can be connected downstream of the MEMS(s) in the corresponding radiation path in a cost-effective manner. Such downstream optics can be useful, particularly when a particular augmented reality waveguide (e.g., spectacle lenses in the case of eyeglasses applications) requires a specific magnification of the beam cross-section to suppress parasitic artifacts that would otherwise occur.

[0083] A third aspect of the apparatus for achieving the object of the invention relates to an image projection apparatus for projecting an image into a projection field, wherein, for the case N>1, the image projection apparatus comprises a plurality of multi-beam microscanner systems according to a first aspect of the apparatus for achieving the object of the invention, the multi-beam microscanner systems being configured to each represent an image point of the image to be projected. Thus, the projection field is generated by superimposing the individual observation fields of the individual microscanner systems, wherein these observation fields may overlap or separate from each other. A combination of these two alternatives is also conceivable, particularly for obtaining image representations in which color-variable and monochrome image regions can be found. In some embodiments, the image projection apparatus comprises one or more layer arrangements according to a second aspect, wherein a corresponding number of microscanner systems of at least two of the microscanner systems of the image projection apparatus are contained in each of the layer arrangements. In this way, even large image projection apparatuses, particularly those with various projection field profiles, can be manufactured particularly efficiently. This can be achieved, in particular, by assembling the image projection device in a block-like manner (see above), wherein the image projection device is assembled by a grid-like arrangement of multiple layers (and possibly additional individual microscanner systems), which in this case are used as “blocks”.

[0084] A fourth aspect of the apparatus for achieving the object of the present invention relates to a method for producing a plurality of microscanner systems according to the first aspect, wherein the method comprises: - In the case of N=1: (i) multiple substrates are stacked together along the stacking direction to produce a stack formed as a substrate stack according to the second aspect, wherein the substrates that are respectively adjacent to each other are fastened together in the substrate stack at the interface between them, in particular by means of corresponding bonding connections; and (ii) at least two microscanner systems are split from the substrate stack to obtain a single microscanner system; and - In the case of N>1: (i) stacking multiple substrates together along the stacking direction to produce a stack formed as a layer arrangement according to the second aspect, wherein the substrates that are respectively adjacent to each other are fastened together in the layer arrangement at the interface between them, in particular by means of corresponding bonding connections; and (ii) dividing at least two microscanner systems from the layer arrangement individually or in at least two groups of two or more microscanner systems that are respectively adjacent to each other, to obtain a single microscanner system or multiple units associated with a group, each having multiple microscanner systems.

[0085] In particular, in order to achieve exceptionally high manufacturing efficiencies of 100 or higher, especially even 1,000, 10,000 or higher, the microscanner system can be segmented from the substrate stack or layer arrangement, which for this purpose then contains at least that number of microscanner systems.

[0086] Therefore, the substrate stack or layer arrangement according to the second aspect can be specifically understood as an intermediate product in parallel manufacturing according to the method of the multiple microscanner systems according to the first aspect.

[0087] In this paper, the term "stack" for substrate refers to any form of layer arrangement in which a substrate stack (in the case of N=1) or a continuous layer of material is generated along a stacking direction, wherein the material layers are referred to as "substrates" respectively. Therefore, this may particularly involve the stacking of solid substrates (such as wafers). Depending on the material, the deposition of layers, such as by liquid deposition followed by drying or curing, sputtering or gas deposition methods (such as chemical vapor deposition, CVD), or hybrid forms are also conceivable.

[0088] In some embodiments of this method, substrate stacking includes forming at least two partial substrate stacks (in the case of N=1) or partial layer arrangements (in the case of N>1) by stacking two or more substrates of each partial substrate stack or partial layer arrangement respectively. Here, in each partial substrate stack or each partial layer arrangement, the respective adjacent substrates are fastened to each other at their interfaces, particularly by means of corresponding bonding connections (particularly by wafer bonding). Subsequently, the partial substrate stacks or partial layer arrangements and optionally other substrates are stacked to each other and fastened to each other at the interfaces, particularly again by corresponding bonding connections, so as to form a substrate stack or layer arrangement as a whole. In particular, the substrates and / or partial stacks to be bonded can be aligned very precisely to achieve optimal mating. Submicron precision is particularly advantageous and achievable here. Furthermore, the formation of a package for a micro-scanner system can be performed on a stacked basis, i.e., prior to dicing. This can be achieved, in particular, in the so-called wafer-level packaging (WLP) as with pure semiconductor wafers.

[0089] Optionally, one or more additional substrates may be arranged between partial substrate stacks or partial layer arrangements, such that the stacking of partial substrate stacks or partial layer arrangements can be carried out not only directly but also indirectly, i.e., including one or more additional substrates located between partial substrate stacks or partial layer arrangements.

[0090] Forming partial substrate stacks or partial layer arrangements can be particularly advantageous for achieving process parallelization, where two or more partial substrate stacks or partial layer arrangements are produced simultaneously, thereby increasing throughput. For example, different stacking stations can be used in the production line to produce various partial substrate stacks or partial layer arrangements before these, and optionally additional, substrates are assembled as a whole into a substrate stack or partial layer arrangement. This also makes it easy to achieve manufacturing variations, such as different individual processes or process controls for a single partial substrate stack or partial layer arrangement, without having to consider other partial substrate stacks or partial layer arrangements or their manufacturing, for example, in terms of available process or temperature or pressure ranges.

[0091] In some embodiments, - In the case of N=1: Alignment marks are generated in or on at least one selected substrate layer, and during the formation of the substrate stack, at least one other substrate layer is aligned with respect to its relative position to the selected substrate layer by means of the corresponding alignment marks; and - In the case of N>1: For each multi-beam microscanner system formed in the layer arrangement, a radiation source associated therewith is mounted as a pre-manufactured component in or on the first substrate of the layer arrangement, each radiation source having one or more radiation emitters, which are formed in the field or individually or in combination; during the production of the substrate stack, the first substrate equipped with the radiation sources of the multi-beam microscanner system is aligned as a whole with respect to the second substrate.

[0092] In particular, all substrate layers or substrates can be aligned on one or more other substrate layers or substrates using such alignment marks. This allows for high-precision alignment of substrate layers or substrates with each other, and therefore, high optical quality, especially for microscanner systems.

[0093] In some embodiments, before segmentation: - In the case of N=1: For each microscanner system formed in the substrate stack, a radiation source with one or more radiation emitters, respectively, is formed in-situ or mounted as a pre-fabricated component in or on the first substrate layer of the substrate stack, particularly for all microscanner systems of the substrate stack to be formed or mounted simultaneously (and therefore efficiently). During the production of the substrate stack, the first substrate layer equipped with the radiation sources of the microscanner systems is aligned as a whole with respect to the second substrate layer, particularly by using alignment marks on the individual substrate layers involved in the alignment; and - In the case of N>1: In or on the first substrate of the layered arrangement, for each multi-beam microscanner system formed in the layered arrangement, a radiation source associated therewith is installed as a pre-manufactured component, each radiation source having one or more radiation emitters, which are formed in the field or individually or in combination; during the production of the substrate stack, the first substrate equipped with the radiation sources of the multi-beam microscanner system is aligned as a whole with respect to the second substrate.

[0094] Alignment may specifically include (i) activating corresponding radiation sources of at least two microscanner systems that are not directly adjacent in a substrate stack or layer arrangement, preferably far apart from each other, and (ii) aligning a first substrate layer or first substrate with at least one other substrate layer (or vice versa) or first substrate (or vice versa) by means of a radiation pattern generated as a whole by the activated radiation sources. The more far apart the activated radiation sources are from each other, the higher the alignment accuracy can generally be obtained.

[0095] In some embodiments, the method further includes: (i) measuring the thickness of the produced stack prior to splitting; (ii) comparing the measured thickness with tolerance standards defined therein; (iii) selecting the stack and omitting splitting if the measured thickness has a value that exceeds the allowable value as defined by the tolerance standards; and (iv) otherwise performing splitting. This method also allows for the evaluation of the quality of the microscanner system or its precursors and improves the efficiency of the manufacturing process while ensuring quality.

[0096] The features and advantages explained in the first aspect of the apparatus for achieving the object of the present invention also apply accordingly to other aspects of the apparatus for achieving the object of the present invention. Attached Figure Description

[0097] Other advantages, features, and possible applications of this device for achieving the objectives of the invention will become apparent from the following more detailed description taken in conjunction with the accompanying drawings.

[0098] In the diagram: Figure 1 The schematic diagram shows a cross-sectional view through the microscanner system according to an exemplary embodiment for the case of N=1; Figure 2 The illustration shows, for example, according to Figure 1 An exemplary embodiment of a substrate stack for multiple microscanner systems; Figure 3 A flowchart is shown, illustrating the process of manufacturing multiple, for example, according to Figure 1 Exemplary embodiments of the method for a microscanner system; Figure 4A and Figure 4BCross-sectional views of a single MEMS projector within a microscanner system in the case of N>1 are schematically shown according to two exemplary embodiments, as well as a multi-beam microscanner system assembled therefrom; Figure 5 The illustration shows, for example, according to Figure 4A or Figure 4B An exemplary embodiment of a layered arrangement of multiple microscanner systems, wherein the multiple microscanner systems are multi-beam; Figure 6 A flowchart is shown, the description of which is used for production, for example, according to Figure 4A or Figure 4B Exemplary embodiments of the method for multiple microscanner systems; Figure 7 A schematic diagram of an image projection device with a projection unit based on a multi-beam microscanner system is shown when N>1. Figure 8 It shows Figure 7 A top view of a first embodiment of the projection unit, wherein MEMS projectors of different colors are provided for each micro-scanner system; and Figure 9 It shows Figure 7 A top view of a second embodiment of the projection unit, wherein each microscanner system itself has only a MEMS projector of the same color. Detailed Implementation

[0099] In the accompanying drawings, the same reference numerals denote the same, similar, or corresponding elements. Elements depicted in the drawings are not necessarily shown to scale. Rather, the various elements shown in the drawings are represented in a manner that will allow those skilled in the art to understand their function and general purpose. Unless otherwise explicitly stated, the connections and couplings between functional units and elements shown in the drawings may also be implemented as indirect connections or couplings.

[0100] Figure 1 Along Figure 2 The cross-sectional view shown, with section line AA passing through the substrate stack 200, illustrates the microscanner system 100 in the case of N=1 according to an exemplary embodiment.

[0101] The microscanner system 100 includes a stack of substrate layers 102 to 118 stacked together along a stacking direction 101, each having at least approximately or partially a plate-like shape. Any adjacent substrate layers are mechanically connected to each other, depending on the material of the substrate layers to be connected, and can be achieved in particular by known wafer bonding methods such as direct bonding, anodic bonding, eutectic bonding, glass paste bonding, or adhesive bonding.

[0102] The base substrate of the substrate stack is a plate-shaped semiconductor substrate layer 102, particularly a semiconductor chip having at least one integrated circuit. In this example, on one hand, the semiconductor substrate layer 102 includes: a first driver circuit 102a for a driving device having at least one actuator (e.g., a piezoelectric actuator) for driving the oscillating motion of the deflection element 112a of the microscanner system 100; and a second driver circuit 102b configured as a driver circuit for the laser device 120 of the microscanner system 100 as a radiation source.

[0103] Laser device 120 may include one or more lasers, particularly laser diodes, as radiation emitters 120a. In the case of multiple radiation emitters, these emitters may be different, particularly regarding the wavelength of the laser radiation 130 that can be emitted. For example, three lasers may be provided, each representing a primary color of a color model in a color space, such as the primary colors of the RGB color model: red (R), green (G), and blue (B), so that various colors from the color space can be represented by superimposing their laser radiation. The lasers may be integrated in a common component representing laser device 120. In particular, such laser device 120 may also be designed to induce beam combining (e.g., a single beam of R, G, B superimposed at a point). For this purpose, laser device 120 may particularly include waveguides 120b. Radiation emitters 120a and waveguides 120b may also be integrated together in a photonic integrated circuit (PIC) (and possibly with additional components such as filters, e.g., tunable filters). As radiation emitters, the following types are particularly suitable: edge-emitting lasers, surface-emitting lasers, superluminescent diodes, Mini-LEDs, and Micro-LEDs. Thus, the radiation emitters 120a of the laser device 120 can be selected to be of the same or different types. It is also conceivable that the aforementioned beam combining does not occur already within the laser device 120, but only in the subsequent regions of the radiation paths of the individual beams from the respective radiation emitters. Therefore, the substrate stack can be designed such that the radiation paths of the respective radiation sources initially travel separately before merging in the regions of one or more layers following the laser device 120. For this purpose, optically efficient substrate layers with appropriate configurations can be particularly provided.

[0104] In the substrate stack, following substrate layer 102 is another substrate layer 104, wherein a connection layer having electrical contacts 124a to 124c is located between these two layers. These electrical contacts are used to electrically connect the terminals of driver circuits 102a and 102b to wires 126 and 122, respectively, for connection to the driving device for deflection element 112a and laser device 120, respectively. Laser device 120 is at least partially encapsulated in cavity 104a of substrate layer 104. Here, substrate layer 104 therefore corresponds to the aforementioned "first" substrate layer.

[0105] The interconnect layers can be continuous, for example, as a continuous wiring plane, or exist in certain locations, particularly in the form of electrical contacts 124a to 124c, which can be formed specifically by soldering or via eutectic bonding. Specifically, one or more of these connections can be specifically designed to function as both mechanical connections (with hermetic seals if necessary) and electrical connections. In addition to the electrical contacts 124a to 124c, an electrically insulating material, particularly a so-called underfill (not shown), may be present to reinforce the mechanical connection between substrate layers 102 and 104, for example, during material bonding (adhesive bonding) processes. Specifically, the underfill can also be designed to at least partially compensate for the difference in the coefficients of thermal expansion between the two substrate layers 102 and 104, in order to increase the temperature resistance of the substrate stack and thus increase the reliability of the microscanner system 100.

[0106] Furthermore, for cooling purposes, one or more cooling elements 136 can be arranged in one or more substrate layers of the substrate stack, particularly in substrate layer 104. Specifically, these can be designed to be filled with channels of a highly thermally conductive material, particularly metals, such as TSV or TGV types, so that they can function as heat sinks facing outwards. Their paths can be aligned parallel to the stack direction 101. Additionally, they can be thermally connected to another, more powerful heat sink, such as a coolant (not shown), to better dissipate the heat absorbed by it.

[0107] In another arrangement of the substrate stack, substrate 104 is followed by another substrate 106, which is made of a material that is at least partially transparent within the wavelength range of the laser source 120 (or, in the case of multiple lasers, within their total used wavelength range), particularly glass or transparent plastic. Substrate 106 is configured to collimate or focus the electromagnetic radiation emitted by the laser source 120 by a beam-shaping optics unit (e.g., by means of fast axis collimation, FAC), specifically in a radiation plane spanned by the stacking direction and a direction orthogonal to it, in which the (first) oscillation axis of the deflection element 112a extends. In a microscanner system including two oscillation axes for the deflection element, the first oscillation axis may be particularly selected such that its associated natural frequency and / or resonant frequency is greater than the natural frequency and / or resonant frequency of the other oscillation axis. In particular, substrate 106 may be designed such that it forms the aforementioned optically effective substrate for beam combining.

[0108] Another substrate layer 108 serves as a spacer and has a central opening through which the radiation path of the radiation 130, collimated by substrate layer 106, passes. This other substrate layer 108 is followed by another substrate layer 110 in the stacked structure. Like substrate layer 106, the other substrate layer 110 is made of a material that is at least partially transparent within the wavelength range of the laser source 120, particularly glass or transparent plastic. It is used to further collimate or focus the radiation 130 in another radiation plane spanned by the stacking direction and a direction orthogonal to it, by a beam-shaping optical unit (e.g., by a slow-axis collimator SAC), wherein the second oscillation axis of the deflection element 112a extends orthogonally to the first oscillation axis. By combining substrate layers 106 and 110, the radiation can thus be collimated over its entire cross-section, such that after passing through substrate layer 110, it can be described as a parallel beam. Here, substrate layers 106 and 110 thus correspond respectively to the aforementioned “third” substrate layer. However, it is also possible to omit the stacked structure in which substrate layers 108 and 110 are omitted.

[0109] In the stacked structure, there is another substrate layer 112, in which a cavity 112b is formed centrally, and a deflection element 112a is located in the cavity. Figure 1 The diagram shows three different positions, with the middle position, indicated by a black bar, corresponding to the rest position of the deflection element 112a. The deflection element 112a has an annular shape, specifically a circular annular shape, such that it includes a central opening 112d through which radiation 130 from the substrate layer 110 can pass, as shown below. Figure 1As shown. Here, substrate 112 therefore corresponds to the aforementioned "second" substrate. In particular, the deflection element 112a may have rotational symmetry with respect to the axis of symmetry 112c extending parallel to the stacking direction 101, such as circular symmetry or n-fold rotational symmetry.

[0110] To generate, in particular, multidimensional projections, the deflection element 112a is suspended by one or more springs and fastened to a frame-shaped segment surrounding the substrate layer 112, enabling it to simultaneously perform rotational oscillations about each oscillation axis. Here, the suspension can be configured such that, when each of the rotational oscillations occurs as a free oscillation, it is resonant over an angular range up to the maximum deflection angle, i.e., the restoring force of the spring relative to the corresponding oscillation axis obeys Hooke's law at least to a good approximation. It is also conceivable that the suspension is configured such that the deflection element 112a, with its suspension, forms a Duffing-Oszillator.

[0111] To drive the oscillation, a driving device (not shown) is provided on the deflection element 112a. Specifically, the driving device may have one or more piezoelectric actuators, which are mounted, for example, on one or more springs, to deform them by applying force when the driver circuit 102a is controlled accordingly. This deformation can cause the deflection element 112a to deflect from its rest position to initiate and / or continuously continue one-dimensional or multi-dimensional oscillations of the deflection element 112a. In the case described above where substrates 108 and 110 are omitted, substrate 112 may be directly following substrate 106 in the stacked structure.

[0112] The drive unit is electrically connected to the driver circuit 102a via a connection line passing through the lower portion of the substrate stack. Figure 1 Only one of the connecting lines 126 is shown by way of example. Conductive, particularly metallic, terminal bonding connections 128 are provided at the interfaces between adjacent substrate layers in the portion of the substrate stack through which the connecting line passes, so as to achieve good conductivity as a whole along the line or each line 126.

[0113] For the terminal bonding connections 128, metal eutectic bonding such as gold-tin connections or direct metal bonding methods such as gold-gold connections are particularly conceivable. For the vertical wire segments of (one or more) lines 126 in the substrate stack, conductive through-contacts are introduced into the respective substrate layer, for example, into so-called glass vias (TGVs) in the case of glass substrates, or into so-called silicon vias (TSVs) in the case of silicon substrates. Attached to the wires, including the wires 126 of the respective associated terminal bonding connections 128, can also be used for heat dissipation, which is particularly important for the substrate layer 104 having a typical heat-generating laser device 120.

[0114] Following substrate layer 112 is another substrate layer 114, which, together with substrate layers 110 and 112, hermetically seals cavity 112b on all sides with deflection element 112a. Thus, cavity 112b can be evacuated or at least filled with gas under negative pressure, making gas friction losses during the oscillation of deflection element 112a (almost) completely avoided or at least significantly reduced. One or more, and in particular all, other cavities that may exist in the substrate stack can also be hermetically sealed and evacuated or placed under negative pressure. This is particularly applicable to cavities between collimator substrate layers 106 and 110 and / or cavity 104a in substrate layer 104 where laser device 120 is located.

[0115] In the stacked structure, substrate layer 114 is followed by another bundle of shaping substrate layers 116, in which a transmission axis prism 116a is formed with a central reflective surface 116b applied thereon, the central reflective surface 116b serving as an additional reflective axis prism. However, it is also conceivable that substrate layers 114 and 116 overlap, i.e., forming a single substrate layer structured to form an axis prism.

[0116] In both cases, such as Figure 1 As shown, another substrate layer 118 may be present on top, serving as a cover layer and simultaneously as a transmission axial prism or converging lens. Subsequently, an axial prism 116a with a reflective surface 116b is arranged such that during operation of the microscanning system 100, radiation 130 from layer 114 passes through the axial prism 116a, strikes the reflective surface 116b, and is reflected from there onto the side of the deflecting element 112a facing away from the laser device 120, where the mirror surface of the deflecting element 112a is located. At this mirror surface of the deflecting element 112a, the radiation is reflected again to be projected through the cavity between substrate layer 114, axial prism 116a, and substrate layers 116 and 118, and finally through substrate layer 118 as a beam collimated by the latter, entering the observation field.

[0117] Therefore, substrates 114, 116, and 118, at least in the region of the radiation path of radiation 130, are each made of a material that is at least partially transparent within the wavelength range of laser source 120 (except for reflective surfaces 116a and 116b). The material can be glass or transparent plastic, and the materials of the various substrates 114 to 118 mentioned above can also be different from each other. Here, substrates 116 and 118 therefore correspond to the aforementioned "fourth" substrate, respectively.

[0118] Instead of the axial prism, other beam-shaping optical units, such as parabolic mirrors or plane deflecting mirrors, can also be envisioned.

[0119] The substrate 114 can also be specifically designed as a matte screen or a diffuse screen, so that when irradiated with rays deflected by deflection elements, an intermediate image is formed on it, which is then projected into the observation field through the substrates 116 and 118, which serve as projection optics.

[0120] The stacked structure of the microscanner system 100 may also include rewiring (not shown) for electrical connections, wherein the rewiring may be specifically designed to be in or near the interface between adjacent substrate layers, particularly in or on substrate layers 102, 104 and / or 112.

[0121] In particular, multiple, especially or even all, of the substrate layers of a microscanner system can exhibit rotational symmetry with respect to the axis of symmetry 112c, such as circular rotational symmetry, or, in the case of a square basic plane, fourth-order rotational symmetry.

[0122] Please refer to later Figure 2 and Figure 3 Discuss the additional reference numerals WS1 to WS3 and 200.

[0123] Figure 2 A schematic illustration shows a system with multiple microscanners, for example, according to Figure 1 An exemplary embodiment of the substrate stack 200, particularly the wafer stack, of the microscanner system 100. The microscanner system is formed laterally side-by-side, similar to a semiconductor chip on a semiconductor wafer. Substrates stacked on top of each other in the substrate stack 200 are respectively partially formed as substrate layers of each of the substrate layers 102 to 118 formed in the substrate stack. Figure 1 The cross-section shown can be obtained, for example, at the dashed line AA.

[0124] Figure 3 A flowchart is shown to illustrate the multiple microscanner systems used to generate the case of N=1 (e.g., also referenced below according to...). Figure 1 Exemplary embodiment 300 of the method of the microscanner system 100).

[0125] In method 300, the product is first produced in processes 305 to 320 according to... Figure 2 The substrate stack 200. In each of processes 305 to 315, only a portion of the substrate stack 200 is produced as a precursor, namely a corresponding partial substrate stack WS1, WS2, or WS3. These partial substrate stacks WS1, WS2, and WS3 are produced together with the substrate stack 200 in... Figure 1As shown, they are each used in part in a single microscanner system 100. For example, each of processes 305 to 320 can be performed in a specially designed manufacturing station or production line. In particular, process 315, as well as one or both of processes 305 and 310, can be performed concurrently in time, i.e., at least partially simultaneously. However, it is also conceivable to perform the processes sequentially, particularly by means of a single production line. Here, the order of processes 310 and 315 is freely selectable.

[0126] Specifically, in process 305, a partial substrate stack WS1 is produced by interconnecting the substrates corresponding to substrate layers 106 to 110. This can be specifically performed in a vacuum or negative pressure chamber, such that the corresponding chamber hermetically sealed by substrate layers 106 to 110 in each resulting microscanner system 100 is later evacuated or negatively pressurized. Process 305 may also include the production of these substrates if they are not yet ready for delivery. The partial substrate stack WS1 forms a collimator or focusing optical unit for radiation 130 for each microscanner system 100 to be formed in the substrate stack 200, as referenced above. Figure 1 As explained in detail.

[0127] In process 310, partial substrate stack WS1 is supplemented by substrates corresponding to substrate layers 112 and 114 having deflection elements 112a to form partial substrate stack WS2. Process 310 may also include the production of these substrates if and only if these substrates are not yet ready for delivery.

[0128] In process 315, a partial substrate stack WS3 is produced, wherein layer 104, which has been structured as a precursor, is specifically equipped with a radiation source 120. Furthermore, substrates corresponding to substrate layers 102 and 104, including the connecting layer 124, are bonded together. Process 315 may also include the production of these substrates (as precursors) if or as long as they are not yet ready for delivery as precursors. The radiation source is contacted by means of the connecting layer 124.

[0129] In process 320, to form the entire substrate stack 200, previously produced partial stacks WS2 and WS3 are assembled and supplemented by substrates corresponding to substrate layers 116 and 118. To connect the respective adjacent substrates, and subsequently the partial substrate stacks WS1, WS2, or WS3, as well as the overall substrate stack 200, various wafer bonding methods mentioned above can be used, depending on the type of substrates to be connected. To align the substrate layers to be connected of the respective partial stacks WS1 to WS3 before or during the respective connection process, and subsequently align partial stacks WS2 and WS3, alignment marks 132 can be provided on one or more substrate layers. Furthermore, to increase alignment accuracy and / or for subsequent evaluation of the resulting substrate stack or the microscanner system 100 segmented therefrom, one or more alignment accuracy features 134, for example, formed on or pre-formed on the relevant substrate layers, such as those shown on substrate layer 104, can be formed on or pre-formed on the relevant substrate layers.

[0130] Alignment may alternatively or additionally include activating at least two microscanner systems that are not directly adjacent in the substrate stack, wherein, The first substrate layer, and therefore the radiation source 120, is aligned with at least one, and in particular all, of the other substrate layers by means of a radiation pattern generated by the radiation source being activated as a whole. This is an advantageous method, particularly with regard to the mutual orientation of the partial stacks WS1 to WS3, to achieve exceptionally high alignment accuracy.

[0131] Once the substrate stack is complete, it can be tested as a whole during test procedure 325. For this purpose, its thickness, particularly its maximum thickness, is measured and compared to pre-defined tolerance standards, such as permissible tolerance ranges for thickness. If the tolerance standards are not met (330 – No), the substrate stack as a whole is selected as a defect (350).

[0132] Otherwise (330 – yes), the method continues with test process 335, in which the microscanner system 100 formed in the substrate stack is tested individually, but preferably simultaneously, at the substrate stack level (i.e., at the wafer level in the case of a wafer). Here, if defects are detected in some of the microscanner systems 100, these defects can be specifically marked as faulty and / or classified as defects in the associated data structure.

[0133] Subsequently, in the dicing process 340, the completed substrate stack 200 is diced into individual, tested microscanner systems 100 contained within it. This can be accomplished, in particular, using a sawing process. Such a sawing process, for example using a diamond-coated saw, specifically corresponds to sawing processes known from semiconductor technology for dicing semiconductor wafers into individual chips.

[0134] Subsequently, in the subsequent selection process 345, microscanner systems that were previously flagged or classified as defective can be individually selected, and in particular rejected.

[0135] Figure 4A and 4B As based on the path associated with the MEMS projector 100a Figure 5 The cross-sectional view of the section of the layer arrangement 200 shown by the section line AA shows that, for the case where N>1 according to the corresponding exemplary embodiment, a microscanner system 100 including – for example three – individual MEMS projectors is shown in the lower part of them, and an individual MEMS projector of these MEMS projectors 100a is shown in the upper part of the figure.

[0136] The MEMS projector 100a (in part) includes a substrate stack consisting of a plurality of substrate layers 102 to 118 stacked together along a stacking direction 101, each of the plurality of substrate layers having at least approximately or partially a plate-like shape. Any adjacent substrate layers are mechanically connected to each other, depending on the material of the substrate layers to be connected, and in particular can be achieved by known wafer bonding methods, such as direct bonding, anodic bonding, eutectic bonding, glass paste bonding, or adhesive bonding.

[0137] The base substrate of the substrate stack is a plate-shaped semiconductor substrate layer 102, particularly a semiconductor chip having integrated circuitry therein (specifically one for each MEMS projector). In this example, on one hand, the semiconductor substrate layer 102 includes: a first driver circuit 102a for a driving device having at least one actuator (e.g., a piezoelectric actuator) for driving the oscillating motion of the deflection element 112a of the MEMS projector 100a; and a second driver circuit 102b configured as a driver circuit for a laser device 120 of the MEMS projector 100a as a radiation source.

[0138] Laser device 120 may include a laser ( Figure 4A ) or multiple lasers ( Figure 4BIn particular, a laser diode serves as the radiating emitter 120a. In the case of multiple radiating emitters, these emitters may differ or coincide in wavelength, particularly with respect to the wavelength of the radiation emitted by the laser 130. For example, three lasers may be provided, representing the primary colors of a color model in a color space, such as the primary colors of the RGB color model: red (R), green (G), and blue (B), so that various colors from the color space can be represented by the laser radiation already superimposed by the laser device 120 itself or thus by a single MEMS projector. The lasers may be integrated in a common component representing the laser device 120. In particular, such a laser device 120 may also be designed to induce beam combining (e.g., superimposing a single beam of R, G, and B at a single point). For this purpose, the laser device 120 may particularly include a waveguide 120b. The radiating emitter 120a and the waveguide 120b (waveguide) may also be integrated together (and, if necessary, with additional components such as filters, e.g., tunable filters) in a photonic integrated circuit (PIC). As radiation emitters, the following types are particularly suitable: edge-emitting lasers, surface-emitting lasers, superluminescent diodes, Mini-LEDs, and Micro-LEDs. Thus, the radiation emitters 120a of the laser device 120 can be selected to be of the same or different types. It is also conceivable that the aforementioned beam combining does not occur within the laser device 120, but only in the subsequent regions of the radiation paths of the individual beams from the respective radiation sources. Therefore, the substrate stack can be accordingly designed such that the radiation paths of the respective radiation sources initially travel separately before merging in the regions of one or more layers following the laser device 120; for this purpose, optically efficient substrate layers of a corresponding configuration can be provided.

[0139] In the substrate stack, following substrate layer 102 is another substrate layer 104, wherein a connection layer having electrical contacts 124a to 124c is located between these two layers. These electrical contacts are used to electrically connect the terminals of driver circuits 102a and 102b to wires 126 and 122, respectively, for connection to a drive device for a deflection element and a laser device 120, respectively. The laser device 120 is at least partially encapsulated in a cavity 104a of substrate layer 104. Here, substrate layer 104 therefore corresponds to the aforementioned "first" substrate layer.

[0140] The connection layers can be continuous, for example, as a continuous wiring plane, or exist in certain locations, particularly only in the form of electrical contacts 124a to 124c, which can be formed, in particular, by soldering or via eutectic bonding. Specifically, one or more of these connections can be specifically designed to function both as mechanical connections (with hermetic seals if necessary) and as electrical connections. In addition to the electrical contacts 124a to 124c, an electrically insulating material, particularly a so-called underfill (not shown), may be present to reinforce the mechanical connection between substrate layers 102 and 104, for example, during material bonding (adhesive bonding) processes. Specifically, the underfill can also be designed to at least partially compensate for the difference in the coefficients of thermal expansion between the two substrate layers 102 and 104, in order to increase the temperature resistance of the substrate stack and thus increase the reliability of the microscanner system 100.

[0141] Furthermore, for cooling purposes, one or more cooling elements 136 can be arranged in one or more substrate layers of the substrate stack, particularly in substrate layer 104. Specifically, the cooling elements can be designed to fill channels with a highly thermally conductive material, particularly metal, such as TSV or TGV type, so that they can function as heat sinks facing outwards. Their paths can be aligned parallel to the stack direction 101. Additionally, they can be thermally connected to another, more powerful heat sink, such as a dissipator (not shown), to better dissipate the heat absorbed thereby.

[0142] In another arrangement of the substrate stack, substrate 104 is followed by another substrate 106, which is made of a material that is at least partially transparent within the wavelength range of the laser source 120 (or, in the case of multiple lasers, the entire wavelength range utilized), particularly glass or transparent plastic. Substrate 106 is configured to collimate or focus the electromagnetic radiation emitted by the laser source 120 by a beam-shaping optical unit (e.g., by fast axis collimation, FAC), particularly in a radiation plane spanned by the stacking direction and a direction orthogonal to it, in which the (first) oscillation axis of the deflection element 112a extends. In a microscanner system including two oscillation axes for the deflection element, the first oscillation axis may be particularly selected such that its associated natural frequency and / or resonant frequency is greater than the natural frequency and / or resonant frequency of the other oscillation axis. In particular, substrate 106 may be designed such that it forms the aforementioned optically effective substrate for beam combining.

[0143] In the stacked structure, another substrate layer 108, serving as a spacer and having a central opening, is followed by another substrate layer 110 through which the radiation path of the radiation 130, collimated by substrate layer 106, passes. Like substrate layer 106, the other substrate layer 110 is made of a material that is at least partially transparent within the wavelength range of the laser source 120, particularly glass or transparent plastic. It is used to further collimate or focus the radiation 130 in another radiation plane spanned by the stacking direction and a direction orthogonal to it, via a beam-shaping optical unit (e.g., via a slow-axis collimator SAC), wherein the second oscillation axis of the deflection element 112a extends orthogonally to the first oscillation axis. By combining substrate layers 106 and 110, the radiation can thus be collimated over its entire cross-section, such that after passing through substrate layer 110, it can be described as a parallel beam. Here, substrate layers 106 and 110 thus correspond respectively to the aforementioned “third” substrate layer. However, it is also possible to omit the substrate layers 108 and 110 in the stacked structure.

[0144] In the stacked structure, there is another substrate layer 112, in which a cavity 112b is formed centrally, and a deflection element 112a is located in the cavity. Figure 4A and Figure 4B The diagram shows three different positions, with the middle position, indicated by a black bar, corresponding to the rest position of the deflection element 112a. The deflection element 112a has an annular shape, specifically a circular annular shape, such that it includes a central opening 112d through which radiation 130 from the substrate layer 110 can pass, as shown below. Figure 4A and Figure 4B As shown. Here, substrate 112 therefore corresponds to the "second" substrate layer described above. In particular, the deflection element 112a may have rotational symmetry with respect to the axis of symmetry 112c extending parallel to the stacking direction 101, such as circular symmetry or n-fold rotational symmetry.

[0145] To generate, in particular, multidimensional projections, the deflection element 112a is secured to a frame-shaped segment surrounding the substrate 112 via suspension by one or more springs, enabling it to simultaneously perform rotational oscillations about each oscillation axis. Here, the suspension can be configured such that, when each of the rotational oscillations occurs as a free oscillation, it resonates within an angular range up to the maximum deflection angle, i.e., the restoring force of the spring relative to the corresponding oscillation axis obeys Hooke's law at least to a good approximation. It is also conceivable that the suspension is configured such that the deflection element 112a forms a Davin oscillator using its suspension.

[0146] To drive the oscillation, a driving device (not shown) is provided on the deflection element 112a. Specifically, the driving device may have one or more piezoelectric actuators, which are mounted, for example, on one or more springs, to deform them by applying force when the driver circuit 102a is controlled accordingly. This deformation can cause the deflection element 112a to deflect from its rest position to initiate and / or continuously continue one-dimensional or multi-dimensional oscillations of the deflection element 112a. In the case described above where substrates 108 and 110 are omitted, substrate 112 may be directly following substrate 106 in the stacked structure. Substrate 112 forms a MEMS together with the driving device, and the MEMS, in turn, forms an integral part of the MEMS projector.

[0147] The drive unit is electrically connected to the driver circuit 102a via a connection line passing through the lower portion of the substrate stack. Figure 4A and Figure 4B Only one of the connecting lines 126 is shown by way of example. Conductive, particularly metallic, terminal bonding connections 128 are provided at the interfaces between adjacent substrate layers in the portion of the substrate stack through which the connecting line passes, so as to achieve good conductivity as a whole along the line or each line 126.

[0148] For the terminal bonding connections 128, metal eutectic bonding such as gold-tin connections or direct metal bonding methods such as gold-gold connections are particularly conceivable. For the vertical wire segments of (one or more) lines 126 in the substrate stack, conductive through-contacts are introduced into the respective substrate layer, for example, into so-called glass vias (TGVs) in the case of glass substrates, or into so-called silicon vias (TSVs) in the case of silicon substrates. Attached to the wires, including the wires 126 of the respective associated terminal bonding connections 128, can also be used for heat dissipation, which is particularly important for the substrate layer 104 having a typical heat-generating laser device 120.

[0149] Following substrate layer 112 is another substrate layer 114, which, together with substrate layers 110 and 112, hermetically seals cavity 112b on all sides with deflection element 112a. Thus, cavity 112b can be evacuated or at least filled with gas under negative pressure, making gas friction losses during the oscillation of deflection element 112a (almost) completely avoided or at least significantly reduced. One or more, and in particular all, other cavities that may exist in the substrate stack can also be hermetically sealed and evacuated or placed under negative pressure. This is particularly applicable to cavities between collimator substrate layers 106 and 110 and / or cavity 104a in substrate layer 104 where laser device 120 is located.

[0150] In the stacked structure, substrate layer 114 is followed by another bundle of shaping substrate layers 116, where a transmission axis prism 116a is formed with a central reflective surface 116b applied thereon, which serves as an additional reflective axis prism. However, it is also conceivable that substrate layers 114 and 116 overlap, i.e., forming a single substrate layer configured to form an axis prism.

[0151] In both cases, such as Figure 4A and Figure 4B As shown, another substrate layer 118 may be present on top, serving as a cover layer and simultaneously as a transmission axial prism or converging lens. Subsequently, an axial prism 116a with a reflective surface 116b is arranged such that during operation of the microscanning system 100, radiation 130 from layer 114 passes through the axial prism 116a, strikes the reflective surface 116b, and is reflected from there onto the side of the deflection element 112a facing away from the laser device 120, where the mirror surface of the deflection element 112a is located. At this mirror surface of the deflection element 112a, the radiation is reflected again to be projected through the cavity between substrate layer 114, axial prism 116a, and substrate layers 116 and 118, and finally through substrate layer 118 as a beam collimated by the latter, entering the observation field.

[0152] Therefore, substrates 114, 116, and 118, at least in the region of the radiation path of radiation 130, are each made of a material that is at least partially transparent within the wavelength range of laser source 120 (except for reflective surfaces 116a and 116b). The material can be glass or transparent plastic, and the materials of the various substrates 114 to 118 mentioned above can also be different from each other. Here, substrates 116 and 118 therefore correspond to the aforementioned "fourth" substrate, respectively.

[0153] Instead of the axial prism, other beam-shaping optical units, such as parabolic mirrors or plane deflecting mirrors, can also be envisioned.

[0154] The substrate 114 can also be specifically designed as a matte screen or a diffuse screen, so that when irradiated with rays deflected by deflection elements, an intermediate image is formed on it, which is then projected into the observation field through the substrates 116 and 118, which serve as projection optics.

[0155] The stacked structure of the MEMS projector 100a may also include rewiring (not shown) for electrical connections, wherein the rewiring may be specifically designed to be in or near the interface between adjacent substrate layers, particularly in or on substrate layers 102, 104 and / or 112.

[0156] In particular, multiple, especially all, of the substrate layers of the MEMS projector 100a can exhibit rotational symmetry with respect to the axis of symmetry 112c, such as circular rotational symmetry, or, in the case of a square basic plane, fourth-order rotational symmetry.

[0157] Please refer to later Figure 5 and Figure 6 Discuss other figures 201 to 203 and 200.

[0158] Figure 5 An exemplary embodiment of the layer arrangement 200, particularly a wafer stack, is schematically shown, having multiple microscanner systems, such as according to Figure 4A or Figure 4B Each of the multiple beams of the microscanner system 100. The microscanner systems are formed laterally side-by-side, similar to semiconductor chips on a semiconductor wafer. The stacked substrates of the layer arrangement 200 are respectively partially formed as substrate layers of each microscanner system 100 formed in the layer arrangement, and thus also as substrate layers of their MEMS projectors 100a. For example, it can be obtained at the dashed line AA. Figure 4A and Figure 4B The cross-sections of the corresponding microscanner system 100 shown are each partially used for only one MEMS projector.

[0159] Figure 6 A flowchart is shown illustrating the process for manufacturing multiple microscanner systems, for example, according to... Figure 4A An exemplary embodiment 300 of the method of a microscanner system 100 of or 4B.

[0160] In method 300, the product is first produced in processes 305 to 320 according to... Figure 2 In each of processes 305 to 315, only a portion of layer arrangement 200 is produced as a precursor for a corresponding partial layer arrangement 201, 202, or 203. These partial layer arrangements 201, 202, and 203, as well as layer arrangement 200, are respectively targeted at… Figure 4A and Figure 4B A single MEMS projector 100a is partially shown. For example, each of processes 305 to 320 can be performed in a specially designed manufacturing station or production line. In particular, process 315, and one or both of processes 305 and 310, can be performed in overlapping time, i.e., at least partially simultaneously. However, it is also conceivable to perform the processes sequentially, particularly by means of a single production line. Here, the order of processes 310 and 315 is freely selectable.

[0161] Specifically, in process 305, partial substrate stacks 201 are produced by interconnecting the substrates corresponding to substrate layers 106 to 110. This can be done, in particular, in a vacuum or negative pressure chamber, such that later in each resulting microscanner system 100, for each MEMS projector 100a, the corresponding chamber hermetically sealed by substrate layers 106 to 110 is evacuated or negatively pressured. Process 305 may also include the production of these substrates if they are not yet ready for delivery. The partial layer arrangement 201 forms collimators or focusing optics for radiation 130 for each microscanner system 100 to be formed in the layer arrangement 200, as referenced above. Figure 4A and Figure 4B As explained in detail.

[0162] In process 310, partial layer arrangement 201 is supplemented by substrates corresponding to substrate layers 112 and 114 having deflection element 112a to form partial layer arrangement 202. Process 310 may also include the production of these substrates if and only if these substrates are not yet ready for delivery.

[0163] In process 315, a partial layer arrangement 203 is produced, wherein layer 104, which has been structured as a precursor, is specifically equipped with a radiation source 120. Furthermore, substrates corresponding to substrate layers 102 and 104, including the connecting layer 124, are bonded together. Process 315 may also include the production of these substrates (as precursors) if or as long as they are not yet ready for delivery as precursors. The radiation source is contacted by means of the connecting layer 124.

[0164] In process 320, to form the entire layer arrangement 200, previously produced partial stacks 202 and 203 are assembled and supplemented by substrates corresponding to substrate layers 116 and 118. Various wafer bonding methods already mentioned above can be used to connect the respective adjacent substrates, and subsequently, the partial layer arrangements 201, 202, or 203, as well as the entire layer arrangement 200, depending on the type of substrates to be connected. Alignment marks 132 can be provided on one or more substrates to align the substrate layers to be connected of the respective partial stacks 201 to 203 before or during the respective connection process, and subsequently, to align partial layer arrangements 202 and 203. Furthermore, to increase alignment accuracy and / or for subsequent evaluation of the resulting layer arrangement or the microscanner system 100 segmented therefrom, one or more alignment accuracy features 134, for example, scaled up, can be formed or pre-formed on the relevant substrate layer, such as those shown on substrate layer 104.

[0165] Alignment may alternatively or additionally include at least two microscanner systems in the active layer arrangement that are not directly adjacent, wherein the (“first”) substrate corresponds to the first substrate layer, and thus to the radiation source 120 having at least one, and in particular all, other substrates, by means of a radiation pattern generated as a whole by the active radiation source. This is an advantageous method, particularly with regard to the mutual orientation of partial stacks WS1 to WS3, to achieve particularly high alignment accuracy.

[0166] Once the layer arrangement is complete, it can be tested as a whole in test procedure 325. For this purpose, its thickness, particularly its maximum thickness, is measured and compared with pre-defined tolerance standards, such as permissible tolerance ranges for thickness. If the tolerance standards are not met (330 – No), the layer arrangement is selected as a defect (350).

[0167] Otherwise (330 – yes), the method continues with test process 335, in which the microscanner system 100 formed in the layer arrangement is tested individually, but preferably simultaneously, at the layer arrangement level (i.e., at the wafer level in the case of a wafer). Here, if defects are detected in some of the microscanner systems 100, these defects can be specifically marked as faulty and / or classified as defects in the associated data structure.

[0168] Subsequently, in the dicing process 340, the completed layer arrangement 200 is diced into individual, tested microscanner systems 100 contained within it. This can be accomplished, in particular, using a sawing process. Such a sawing process, for example using a diamond-coated saw, specifically corresponds to sawing processes known from semiconductor technology for dicing semiconductor wafers into individual chips.

[0169] Subsequently, in the subsequent selection process 345, microscanner systems that were previously flagged or classified as defective can be individually selected, and in particular rejected.

[0170] Figure 7 An image projection device 400 is schematically illustrated having a projection unit 405 based on a plurality of multi-beam microscanner systems 100 according to various embodiments (comparative). Figure 8 and Figure 9 In addition to the projection unit 405, the image projection device 400 also includes a signal processing unit 415 in a common package 410, which can process the image to be projected by the projection unit into the projection field 420, such as a still image or a moving image (e.g., video or animation), based on the associated image data of the image, such as for rendering or further image processing procedures, such as filtering, color adjustment, resolution adjustment, etc. Furthermore, the image projection device 400 may include additional components ( Figure 7(not shown), such as a communication interface for receiving data representing the image to be projected, or a power supply unit, such as a battery, for supplying energy to the image projection device 400.

[0171] Figure 8 It shows Figure 7 In a first embodiment 500 of the projection unit 405, a MEMS projector of different colors is provided for each microscanner system 100. In the projection unit 405, for example according to... Figure 1 A plurality of multi-beam microscanner systems 100 are arranged in a grid pattern. In this example, each microscanner system 100 has three different MEMS projectors 100a. Specifically, they can be selected such that they collectively cover the RGB color space, such that each microscanner system 100 includes MEMS projectors 100a-R for “red”, MEMS projectors 100a-G for “yellow”, and MEMS projectors 100a-B for “blue”, which together can project pixels (image points) of variable color. The colors of the individual MEMS projectors can be variably determined by how they are controlled by superimposing their respective emission beams, particularly in a time-dependent manner. Thus, the corresponding intensity of the radiation emitted by the MEMS projectors can be adjusted through this control. Due to their individual design, the microscanner systems 100 form “blocks” respectively, and these blocks are assembled together in a grid-like arrangement as a “stitching”. Therefore, each block can be understood as a source of color-variable "pixels," and each MEMS projector 100a within it can be understood as a source of a sub-pixel with a sub-pixel color corresponding to the emitted color of the MEMS projector 100a. Instead... Figure 5 The 3 x 3 concatenation shown can also be achieved using other concatenations, such that n, m ∈ The n×m arrangement of a matrix shape is possible. Furthermore, non-matrix arrangements are also conceivable. Each MEMS projector 100a can be configured to emit only monochromatic radiation. Conversely, it is also possible to emit radiation, at least primarily, from a wavelength range limited to one color (e.g., red, yellow, or blue in this case).

[0172] Figure 9 It shows Figure 7 The second embodiment 600 of the projection unit, wherein each microscanner system 100 has only a MEMS projector 100a of the same color, which may additionally correspond to Figure 8 The first embodiment 500. Therefore, each block provides only one "color".

[0173] In both embodiments 500 and 600, a single microscanner system 100 may exist as a single component, and they may be combined to form an assembly-related arrangement. However, it is also possible that all or at least a subset of two or more microscanner systems 100 may still be monolithically integrated within the layer arrangement 200, i.e., without being separated therefrom.

[0174] List of reference numerals

[0175] 100 Micro Scanner System

[0176] 100a MEMS projector

[0177] 100a-R MEMS projector for emitting red light radiation

[0178] 100a-G MEMS projector for emitting yellow light radiation

[0179] 100a-B MEMS projector for emitting blue light radiation

[0180] 102 Substrate layer with driver circuitry

[0181] 102a Driver circuit for driving deflection elements

[0182] 102b Driver circuit for laser devices

[0183] 104 The “first” substrate layer with laser device

[0184] 104a Cavity for receiving laser devices

[0185] 106 A substrate layer having a collimator for the first oscillation axis

[0186] 108 Substrate layer as spacer layer

[0187] 110 A substrate layer having a collimator for the second oscillation axis

[0188] 112 "Second" substrate layer with deflection element

[0189] 112a Deflection element

[0190] 112b Cavity for receiving deflection elements

[0191] 112c axis of symmetry

[0192] Opening in the 112d deflection element

[0193] 114 serves as the substrate layer for the cover, which is designed for a cavity with a deflection element.

[0194] 116 Substrate layer with first and second axial prisms

[0195] 118. Substrate layer with a third-axis prism or converging lens

[0196] 120 Radiation sources, especially laser devices

[0197] 120A radiation emitters, especially laser diodes

[0198] 120b photoconductor

[0199] 122 Wires for connecting laser devices

[0200] 124A-C electrical contacts

[0201] 126 Wires for connecting the drive unit for the deflection element

[0202] 128 Conductive terminal bonding connection

[0203] 130 Electromagnetic radiation, especially (laser) beams

[0204] 130-i Electromagnetic beam of the i-th radiation source

[0205] 132 Alignment Mark

[0206] 134 Alignment accuracy features

[0207] 136 Cooling Element

[0208] 200 substrate stack or layer arrangement, especially wafer stack

[0209] Layout of some floors 201-203

[0210] 300 Method for producing a microscanner system having a substrate stack or layer arrangement as an intermediate product

[0211] 305-350 The process within the process of method 300

[0212] 400 Image Projection Device

[0213] 405 Projection Unit

[0214] Various embodiments of projection unit 405, 405a, b

[0215] 410 package

[0216] 415 Signal Processing Unit

[0217] 420 Projection field, superposition of the observation field of a single microscanner system of an image projection device.

[0218] First embodiment of projection unit 405 500

[0219] A second embodiment of the 600 projection unit 405.

Claims

1. A microscanner system (100) for projecting electromagnetic radiation (130) into an observation field, wherein: The microscanner system (100) includes a substrate stack having multiple substrate layers stacked on top of each other along a stacking direction (101); N radiation sources (120) are arranged in or on the first substrate layer (104) of the substrate stack to generate the electromagnetic radiation (130), wherein N≥1; in: When N=1, The second substrate layer (112) of the substrate stack includes a MEMS having at least one deflection element (112a), the at least one deflection element being arranged in the radiation path of the electromagnetic radiation (130) and suspended in a manner capable of rotatably oscillating about at least one oscillation axis, for deflection of at least one electromagnetic beam that can be directionally varied by the radiation source (120); and When N>1, The micro-scanner system is multi-beam; The substrate stack is monolithic; The N radiation sources are respectively configured to emit corresponding electromagnetic beams (130-i) as radiation components of the electromagnetic radiation (130); and For each radiation source (120), the second substrate layer (112) of the substrate stack includes an associated MEMS having at least one deflection element (112a) arranged in the radiation path of the electromagnetic beam (130i) of the corresponding radiation source and suspended in a manner that allows for rotational oscillation about at least one oscillation axis, for deflection of the direction of the electromagnetic beam emitted by the corresponding radiation source (120).

2. The microscanner system (100) according to claim 1, wherein, When N=1: The radiation source (120) is configured to emit electromagnetic radiation generated therefrom, at least primarily as a collimated beam, the collimated beam having a beam direction deviating from the stacking direction (101) of the substrate stack by an angle of up to 10°; and When N>1: At least one of the multi-beam microscanner system (100) or the radiation source (120) is configured to emit electromagnetic radiation generated therefrom, at least primarily as a collimated beam, the collimated beam having a beam direction that deviates from the stacking direction (101) of the substrate stack by an angle of up to 10°.

3. The microscanner system (100) according to any one of the preceding claims, wherein, The substrate stack includes at least one additional substrate layer (106; 110; 116; 118), in or on the substrate layer When N=1: A beam-shaping optical unit is formed for beam shaping, which is configured to shape the at least one electromagnetic beam (130) before and / or after it is deflected by the deflection element (112a); and When N>1: For each radiation source, a beam-shaping optical unit is formed individually or together with at least one other radiation source for beam shaping, which is configured to shape the electromagnetic beam (130-i) of the corresponding radiation source (120) before and / or after the deflection element (112a) associated with the corresponding radiation source deflects the electromagnetic beam.

4. The microscanner system (100) according to claim 3, wherein, The substrate stack includes at least one third substrate layer (106; 110) as each of these additional substrate layers, the at least one third substrate layer having: When N=1: A first beam-shaping optical unit is formed therein for beam shaping, wherein the first beam-shaping optical unit is configured to shape the at least one electromagnetic beam (130) before the at least one electromagnetic beam (112a) is deflected by the deflecting element (112a); and When N>1: For each radiation source (120), a first beam-shaping optical unit is formed therein, the first beam-shaping optical unit being used alone or together with at least one other radiation source for beam shaping, wherein the first beam-shaping optical unit is configured to shape the electromagnetic beam (130-i) of the corresponding associated radiation source (120) before it is deflected by the deflection element (112a) associated with the corresponding radiation source (120).

5. The microscanner system (100) according to claim 3 or 4, wherein, The substrate stack includes at least one fourth substrate layer (116; 118) as each of these additional substrate layers, the at least one fourth substrate layer having: When N=1: A second beam-shaping optical unit (116a, 118) is formed therein for beam shaping, wherein the second beam-shaping optical unit (116a, 118) is configured to shape the at least one electromagnetic beam (130) after it has been deflected by the deflecting element (112a); and When N>1: For each radiation source (120), a second beam-shaping optical unit (116a, 118) is formed therein for beam shaping, wherein the second beam-shaping optical unit (116a, 118) is respectively configured to shape at least one electromagnetic beam (130) of the corresponding associated radiation source after being deflected by the deflection element (112a) associated with the corresponding radiation source (120).

6. The microscanner system (100) according to any one of claims 3 to 5, wherein, When N=1: The beam-shaping optical unit or at least one of the beam-shaping optical units has an axial prism, a parabolic mirror and / or a plane deflector for at least partial beam-shaping of the electromagnetic beam; as well as When N>1: At least one of the beam-shaping optical units associated with the corresponding radiation source (120) has an axial prism, a parabolic mirror and / or a plane deflector for at least partial beam shaping of the electromagnetic beam emitted by the associated radiation source (120).

7. The microscanner system (100) according to any one of the preceding claims, wherein, The substrate stack includes at least one fifth substrate layer (102), wherein a driver circuit (102b) is formed therein or on it. When N=1: The driver circuit is used to electrically control the radiation source (120), and / or the driver circuit (102a) is used to control the rotational oscillation motion of the deflection element (112a) around the at least one oscillation axis. as well as When N>1: The driver circuit is used to electrically control one or more of the radiation sources (120), and / or at least one driver circuit (102a) is used to control one or more rotational oscillations of one or more of the deflection elements (112a) about their respective at least one oscillation axis.

8. The microscanner system (100) according to claim 7, wherein, Viewed along the stacking direction (101), the first substrate layer (104) is arranged to lie flat between the fifth substrate layer (102) and the second substrate layer (112).

9. The microscanner system (100) according to claim 8, wherein: When N=1: The fifth substrate layer (102) includes a driver circuit (102a) for driving the oscillating motion of the deflection element (112a). The second substrate layer (112) includes at least one actuator for driving the oscillating motion of the deflection element (112a); as well as The first substrate layer (104) includes wires extending therethrough for direct or indirect electrical connections from the actuator to the driver circuitry (102a) for controlling the drive; and When N>1: For each deflection element, the fifth substrate layer (102) includes an associated driver circuit (102a) for driving the oscillating motion of the corresponding deflection element (112a). For each deflection element, the second substrate layer (112) includes at least one actuator for driving the oscillating motion of the corresponding deflection element (112a); as well as For each actuator, the first substrate layer (104) includes wires extending through it for direct or indirect electrical connections from the actuator to the driver circuit (102a) for controlling the drive.

10. The microscanner system (100) according to any one of the preceding claims, wherein, The substrate stack includes at least one sixth substrate layer (114), through which the sixth substrate layer When N=1: The first cavity (112b) formed in the substrate stack is hermetically sealed; and When N>1: In the substrate stack, for each deflection element, a first cavity (112b) is formed associated with it and the first cavity is hermetically sealed.

11. The microscanner system (100) according to claim 10, wherein, When N=1: The deflecting element (112a) or at least one of the deflecting elements is arranged in a hermetically sealed first cavity (112b) and suspended therein in a manner capable of rotating and oscillating about the at least one oscillation axis; and When N>1: Each of these deflection elements is arranged in its associated corresponding first cavity (112b) and is suspended therein in a manner that allows it to oscillate about the at least one oscillation axis.

12. The microscanner system (100) according to any one of the preceding claims, wherein, When N=1: The radiation source (120) is at least partially disposed within a second cavity (104a) formed in the first substrate layer (104); and When N>1: At least one of the radiation sources (120) is arranged at least partially within a second cavity (104a), which is formed individually for each radiation source or together for multiple radiation sources in the first substrate layer (104).

13. The microscanner system (100) according to claim 12, wherein, When N=1: The surface portion of the sidewall of the second cavity (104a) includes at least one conductive layer for generating a corresponding electrical connection to the radiation source (120); and When N>1: The surface portion of the sidewall of at least one second cavity (104a) includes at least one conductive layer for generating a corresponding electrical connection for at least one radiation source (120) arranged at least partially in the respective second cavity.

14. The microscanner system (100) according to any one of claims 10 to 13, wherein, When N=1: The first cavity (112b) and / or the second cavity (104a) contain gas at a pressure lower than normal, the gas being at least primarily composed of a protective gas or being evacuated; When N>1: At least one first chamber (112b) or second chamber (104a) is evacuated or contains gas at a pressure lower than the normal pressure, the gas being at least primarily a protective gas.

15. The microscanner system (100) according to any one of the preceding claims further includes: The seventh layer, the seventh layer When N=1: Arranged in the radiation path of the radiation source and formed as a scattering screen or a matte screen, such that when the seventh layer is irradiated by the beam of the radiation source, an intermediate image is generated on the seventh layer; When N>1: Arranged in the respective radiation paths of at least two of the radiation sources and formed as a scattering screen or a matte screen, such that when the seventh layer is irradiated with the beams of these at least two radiation sources, an intermediate image is generated on the seventh layer; as well as Projection optics for imaging the intermediate image onto the observation field.

16. The microscanner system (100) according to any one of the preceding claims, wherein, When N=1: The radiation source (120) for at least partially generating the electromagnetic radiation (130) has one or more of the following radiation emitters: edge-emitting laser, surface-emitting laser, superluminescent diode, Mini-LED, Micro-LED; and When N>1: At least one of the radiation sources (120) used to at least partially generate its corresponding electromagnetic beam (130-i) has one or more of the following radiation emitters (120a): edge-emitting laser, surface-emitting laser, superluminescent diode, Mini-LED, Micro-LED.

17. The microscanner system (100) according to any one of the preceding claims, wherein, When N=1: The deflecting element (112a) has rotational symmetry with respect to an axis of symmetry (112c) extending parallel to the stacking direction (101), and the radiation source (120) is configured such that the electromagnetic beam (130) generated therein during its operation extends along the axis of symmetry (112c) of the deflecting element (112a) and passes through an opening (112d); and When N>1: At least one deflection element (112a) has rotational symmetry with respect to an axis of symmetry (112c) extending parallel to the stacking direction (101), and the radiation source (120) associated with the respective deflection element is configured such that the electromagnetic beam (130) generated therefrom during its operation extends along the axis of symmetry (112c) of the associated deflection element (112a) and passes through an opening (112d) therein.

18. The microscanner system (100) according to any one of claims 1 to 16, wherein, When N=1: The microscanner system is configured such that during operation of the radiation source, an electromagnetic beam (130) generated therefrom extends through the deflection element through an opening in the second substrate layer to a reflective surface, where the beam is deflected onto the deflection element so as to be reflected there; as well as When N>1: The microscanner system is configured such that, for at least one radiation source, during its operation, an electromagnetic beam generated therefrom extends through an opening in the second substrate layer via the deflection element associated with it to a reflective surface, where the beam is deflected onto the deflection element so as to be reflected there.

19. The microscanner system (100) according to any one of the preceding claims, wherein, One or more of the substrates each include at least one alignment mark (132) according to which at least two substrates of the microscanner system (100) are aligned with each other in a dimension extending laterally to the stacking direction (101).

20. The microscanner system (100) according to any one of the preceding claims, wherein, One or more of the substrate layers each include at least one alignment accuracy feature (134), based on which the accuracy of the relative alignment of at least two of the substrate layers of the microscanner system (100) with respect to at least one spatial dimension can be determined.

21. The microscanner system (100) according to any one of the preceding claims further includes one or more cooling elements (136) extending into or through at least two of the substrate layers and formed of a material having increased thermal conductivity relative to its respective immediate environment in the substrate stack.

22. The microscanner system (100) according to any one of the preceding claims, wherein, for the case N>1, At least one of the radiation sources (120) is configured to emit its corresponding electromagnetic beam (130-i) within a wavelength range that is at least partially different from the wavelength range of the beam (130-i) of at least one radiation source (120).

23. The microscanner system (100) according to claim 22, wherein, The microscanner system includes at least two monochromatic radiation sources (120) whose emission wavelengths are selected differently, such that they together cover at least a two-dimensional color space.

24. The microscanner system (100) according to claim 22 or 23 in connection with claim 2, wherein, The radiation sources (120) are configured such that the beam directions of their respective collimated beams are parallel to each other and adjacent to each other, such that the collimated beams of the radiation sources (120) can be perceived in the observation field as mutually adjacent, color-different sub-pixels of pixels formed by the sub-pixel as a whole.

25. The microscanner system (100) according to any one of the preceding claims, wherein, for the case N>1, All radiation sources (120) are configured to emit their electromagnetic beams (130-i) over a wavelength range of at most 100 nm, particularly at most 50 nm, for all radiation sources, or to emit their electromagnetic beams (130-i) monochromatic for all radiation sources (120) at the same wavelength.

26. A stack (200) having a plurality of substrates stacked together along a stacking direction (101), the substrates being fastened together at respective interfaces of the respective adjacent substrates by means of corresponding bonding connections; in, When N=1: The stack is a substrate stack (200) in which a plurality of microscanner systems (100) according to any one of the preceding claims are formed adjacent to each other, such that the microscanner systems can be obtained from the substrate stack (200) by slicing; and In each of the microscanner systems (100), a corresponding substrate stack of the microscanner system, comprising substrate layers, includes an associated segment of the substrate stack (200), wherein the substrates of the substrate stack (200) respectively form one of the substrate layers; and When N>1: The stack is a layered arrangement (200) in which a plurality of corresponding, multi-bundle microscanner systems (100) according to any one of the preceding claims are formed adjacent to each other, such that the multi-bundle microscanner systems can be obtained from the layered arrangement (200) separately or in at least two groups consisting of two or more mutually adjacent microscanner systems; and Each of the multiple-beam microscanner systems (100) includes a corresponding segment of the layer arrangement (200), such that regions of the substrate of the layer arrangement (200) contained in the corresponding segment and stacked on top of each other are respectively formed in one of the substrate layers of the microscanner system (100) formed in the corresponding segment.

27. An image projection apparatus (400) for projecting an image into a projection field (420), wherein, For the case where N>1, the image projection device (400) includes a plurality of multi-beam microscanner systems (100) according to any one of claims 1 to 25, the microscanner systems being configured to represent a pixel of the image to be projected.

28. The image projection apparatus (400) according to claim 27, for the case where N>1, includes one or more layer arrangements (200) according to claim 25. in, At least two microscanner systems of a corresponding number in the microscanner system (100) of the image projection device (400) are included in each of the layer arrangement (200).

29. A method (300) for producing a plurality of microscanner systems (100) according to any one of claims 1 to 25, wherein, The method (300) includes: When N=1: Multiple substrates are stacked (305, ..., 320) along a stacking direction (101) to produce a stack according to claim 25, the stack being formed as a substrate stack (200), wherein adjacent substrates are fastened to each other at interfaces between them in the substrate stack (200); and At least two of the microscanner systems are split (330) from the substrate stack; and When N>1: Multiple substrates are stacked together along a stacking direction to produce a stack according to claim 26, the stack being formed as a layer arrangement wherein substrates that are respectively adjacent to each other are fastened together in the layer arrangement at the interface between them, in particular by means of corresponding bonding connections; and (iii) at least two of the microscanner systems are separated from the layer arrangement individually or in at least two groups consisting of two or more mutually adjacent microscanner systems to obtain a single microscanner system, or a unit associated with the group, the unit having multiple microscanner systems respectively.

30. The method (300) according to claim 29, wherein, The stack (305, ..., 320) includes: At least two partial substrate stacks (WS1, ..., WS3) are formed by stacking two or more substrates from each partial substrate stack (WS1, ..., WS3), wherein, in each partial substrate stack (200), adjacent substrates are fastened to each other at their interfaces by means of corresponding bonding connections; and The partial substrate stacks (WS1, ..., WS3) and selective other substrates are stacked and fastened together to form the substrate stack (200) as a whole.

31. The method (300) according to claim 29 or 30, wherein, When N=1: Alignment marks (132) are generated in or on at least one selected substrate layer (104), and during the formation of the substrate stack, at least one other substrate layer (106) is aligned with respect to its relative position with respect to one or more selected substrate layers (104) by means of the corresponding alignment marks (132); and When N>1: For each of the multiple microscanner systems (100) formed in the layer arrangement (200), a radiation source (120) associated therewith is mounted as a pre-manufactured component in or on a first substrate of the layer arrangement (200), each radiation source having one or more radiation emitters (120a), which are formed in-situ, individually, or in combination; and During the production of the substrate stack, the first substrate, which is equipped with the radiation source (120) of the microscanner system (100) with multiple beams, is aligned as a whole with respect to the second substrate.

32. The method (300) according to any one of claims 29 to 31, wherein, Before the segmentation (340): When N=1: In or on the first substrate layer of the substrate stack (200), for each of the microscanner systems (100) formed in the substrate stack (200), the radiation source (120) having one or more radiation emitters (120a) associated with the microscanner system is formed in the field or installed as a pre-manufactured component. as well as During the production of the substrate stack, the first substrate layer (104) equipped with the radiation source (120) of the microscanner system (100) is aligned as a whole with respect to the second substrate layer (112); as well as When N>1: In or on the first substrate of the layer arrangement (200), for each of the multiple microscanner systems (100) formed in the layer arrangement (200), a radiation source (120) having one or more radiation emitters (120a) respectively associated with the microscanner system is mounted as a pre-manufactured component, which is formed in the field, individually, or in combination; and During the production of the substrate stack, the first substrate, which is equipped with the radiation source (120) of the microscanner system (100) with multiple beams, is aligned as a whole with respect to the second substrate.

33. The method (300) according to claim 32, wherein, The alignment includes: When N=1: Activate the corresponding radiation sources of at least two microscanner systems, wherein the at least two microscanner systems are not directly adjacent in the substrate stack; and Based on the radiation pattern generated as a whole by the activated radiation source, the first substrate layer is aligned with at least one additional substrate layer among a plurality of substrate layers; and When N>1: Activate the corresponding radiation sources of at least two microscanner systems, wherein the at least two microscanner systems are not directly adjacent in the layer arrangement; and The first substrate is aligned with at least one of a plurality of other substrates according to the radiation pattern generated as a whole by the activated radiation source.

34. The method (300) according to any one of claims 29 to 33, further comprising: The thickness of the produced stack is measured (325) prior to the splitting; The measured thickness was compared with the tolerance standards defined in this regard (330); If the measured thickness has a value exceeding the allowable value as classified by the tolerance standard, then the stack (350) is selected and the segmentation (340) is omitted; and Otherwise, perform the segmentation (340).

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