Display devices and electronic equipment

Abstract

A display device with high light extraction efficiency and low color shift is provided. The display device, as a display element, includes a light-emitting element, which includes a light-transmitting insulating layer and a plano-convex lens with a circular or oblong shape when viewed from above. The circular plano-convex lens has a radius r, and the oblong plano-convex lens is an oblong shape with curvature of radius r at both ends. The height of each plano-convex lens is in the range of 0.25r or more and r less. The thickness of the insulating layer is in the range of 1 μm or more and 4 μm less. When the angle between the axis perpendicular to the display surface of the display device is 0°, the device satisfies Δu'v'=0.02 or less when displaying white within the range of -30° to +30°.

Description

Technical Field

[0001] One aspect of the present invention relates to a display device and an electronic device.

[0002] Note that one aspect of the present invention is not limited to the aforementioned technical fields. The technical field of one aspect of the invention disclosed in this specification relates to an object, method, or manufacturing method. Furthermore, one aspect of the present invention relates to a process, machine, manufacture, or composition of matter. Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, energy storage devices, memory devices, imaging devices, methods of operating these devices, or methods of manufacturing these devices.

[0003] Note that in this specification, etc., a semiconductor device refers to any device capable of operating by utilizing the characteristics of semiconductors. A transistor and a semiconductor circuit are types of semiconductor devices. Additionally, storage devices, display devices, imaging devices, and electronic devices sometimes include semiconductor devices. Background Technology

[0004] As electronic devices targeting XR (a general term for virtual reality (VR), augmented reality (AR), or mixed reality (MR), goggle-type devices and glasses-type devices have been developed.

[0005] Furthermore, as display panels that can be applied to these electronic devices, typical examples include display devices that include liquid crystal elements, display devices that include organic EL (Electroluminescence) elements or light-emitting diodes (LEDs).

[0006] Since display devices that include organic EL elements do not require a backlight as needed for liquid crystal displays, they can achieve thin, lightweight, high-contrast, and low-power display devices. For example, Patent Document 1 discloses an example of a display device using organic EL elements.

[0007] [Preliminary Technology Documents]

[0008] [Patent Literature]

[0009] [Patent Document 1] Japanese Patent Application Publication No. 2018-107444 Summary of the Invention

[0010] The technical problem that the invention aims to solve

[0011] Because reflective and refractive optical systems used in VR devices utilize selective reflection of polarized light, their light utilization efficiency is insufficient. Furthermore, AR devices require high visibility even in strong ambient light. Therefore, XR devices necessitate increased display brightness. However, increasing display brightness leads to increased power consumption and decreased reliability of the display device. Therefore, a display device with high light extraction efficiency is required.

[0012] Therefore, one objective of this invention is to provide a display device with high light extraction efficiency. Another objective of this invention is to provide a display device with high color rendering performance. Another objective of this invention is to provide a low-power display device. Another objective of this invention is to provide a display device with high visibility. Another objective of this invention is to provide an electronic device including the display device. Another objective of this invention is to provide a novel electronic device.

[0013] Note that the description of these objectives does not preclude the existence of other objectives. Note that one embodiment of the invention does not necessarily require achieving all of the above objectives. Note that objectives other than those described above can be understood and extracted from the description, drawings, claims, etc.

[0014] means of solving technical problems

[0015] One aspect of the present invention relates to a display device with high light extraction efficiency and low color shift.

[0016] One aspect of the present invention is a display device, which includes a first light-emitting element, a second light-emitting element, and a third light-emitting element, each emitting a different color, in a pixel. A first plano-convex lens is disposed on the first light-emitting element through an insulating layer, a second plano-convex lens is disposed on the second light-emitting element through an insulating layer, and a third plano-convex lens is disposed on the third light-emitting element through an insulating layer. The first and second plano-convex lenses are circular in shape with radius r when viewed from above, and the third plano-convex lens is an elongated oval in shape with circular ends and curvature of radius r when viewed from above. The height of the first to third plano-convex lenses is in the range of 0.25r or more and r less, and the thickness of the insulating layer is in the range of 1μm or more and 4μm less. When the angle of the axis perpendicular to the display surface of the display device is 0°, the white display satisfies Δu'v'=0.02 or less within the range of -30° or more and +30°.

[0017] It is preferable to set the pixel size to be above 2000ppi and below 10000ppi.

[0018] The insulating layer may contain the same material as the first to third plano-convex lenses.

[0019] The refractive index of the insulating layer is preferably greater than that of the first to third plano-convex lenses.

[0020] The height of the first or second plano-convex lens may also be different from the height of the third plano-convex lens.

[0021] The first to third plano-convex lenses can also be joined together.

[0022] Preferably, one of the first and second light-emitting elements emits red light, the other of the first and second light-emitting elements emits green light, and the third light-emitting element emits blue light.

[0023] The first and second light-emitting elements can be approximately square in shape when viewed from above, and the third light-emitting element can be approximately rectangular in shape when viewed from above.

[0024] One aspect of the present invention is an electronic device in which the aforementioned display device is used as a light source, and a reflective and refractive optical system is provided on one side of the display surface of the display device.

[0025] Invention Effects

[0026] According to one aspect of the present invention, a display device with high light extraction efficiency can be provided. Additionally, according to one aspect of the present invention, a display device with high color rendering performance can be provided. Furthermore, according to one aspect of the present invention, a low-power display device can be provided. Furthermore, according to one aspect of the present invention, a display device with high visibility can be provided. Furthermore, according to one aspect of the present invention, an electronic device including the display device can be provided. Furthermore, according to one aspect of the present invention, a novel electronic device can be provided.

[0027] Note that the description of these effects does not preclude the existence of other effects. One aspect of the invention does not necessarily require all of the aforementioned effects. Effects other than those described above can be extracted from the specification, drawings, and claims. Attached Figure Description

[0028] Figure 1 This is a diagram illustrating the pixels of a display device.

[0029] Figure 2A and Figure 2B It is a diagram illustrating the pixels of a display device.

[0030] Figures 3A to 3E This is a diagram illustrating the S-shaped arrangement of pixels.

[0031] Figure 4A and Figure 4BThis is a diagram illustrating the simulation model.

[0032] Figure 5 This is a diagram illustrating the simulation model.

[0033] Figure 6A and Figure 6B This is a graph illustrating the simulation results.

[0034] Figure 7A and Figure 7B This is a diagram illustrating the angles from which chromaticity shift should be suppressed.

[0035] Figure 8A and Figure 8B This is a graph illustrating the simulation results.

[0036] Figure 9A and Figure 9B This is a graph illustrating the simulation results.

[0037] Figure 10A and Figure 10B This is a graph illustrating the simulation results.

[0038] Figure 11A and Figure 11B This is a graph illustrating the simulation results.

[0039] Figure 12A and Figure 12B This is a graph illustrating the simulation results.

[0040] Figures 13A to 13C It is a diagram illustrating the simulation.

[0041] Figure 14A and Figure 14B It is a diagram illustrating the simulation.

[0042] Figure 15 This is a diagram illustrating the simulation model.

[0043] Figure 16A and Figure 16B This is a graph illustrating the simulation results.

[0044] Figure 17A and Figure 17B This is a graph illustrating the simulation results.

[0045] Figure 18A and Figure 18B This is a graph illustrating the simulation results.

[0046] Figure 19A and Figure 19B This is a graph illustrating the simulation results.

[0047] Figure 20A and Figure 20B This is a graph illustrating the simulation results.

[0048] Figure 21A and Figure 21B This is a diagram illustrating a display device.

[0049] Figures 22A to 22E This is a diagram illustrating the lens manufacturing process.

[0050] Figures 23A to 23C This is a diagram illustrating a display device.

[0051] Figures 24A to 24E This is a diagram illustrating the display panel.

[0052] Figures 25A to 25C This is a diagram illustrating an eyeglass-type device.

[0053] Figure 26A and Figure 26B This is a diagram illustrating an example of the structure of a display panel.

[0054] Figure 27 This is a diagram illustrating an example of the structure of a display panel.

[0055] Figure 28 This is a diagram illustrating an example of the structure of a display panel.

[0056] Figure 29 This is a diagram illustrating an example of the structure of a display panel.

[0057] Figure 30 This is a diagram illustrating an example of the structure of a display panel.

[0058] Figure 31 This is a diagram illustrating an example of the structure of a display panel.

[0059] Figure 32 This is a diagram illustrating an example of the structure of a display panel.

[0060] Figure 33A and Figure 33B This is a diagram illustrating a transistor.

[0061] Figure 34A and Figure 34B This is an SEM image of the manufactured lens. Detailed Implementation

[0062] The embodiments will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and those skilled in the art will readily understand that its methods and details can be varied in many ways without departing from the spirit and scope of the invention. Therefore, the present invention should not be construed as limited only to the contents described in the embodiments shown below. Note that in the structure of the invention described below, the same reference numerals are used in different drawings to denote the same parts or parts having the same function, and repeated descriptions are omitted. Note that sometimes the shading of the same constituent elements is appropriately omitted or changed in different drawings.

[0063] Furthermore, even if something is considered a single element on a circuit diagram, it can be constructed using multiple elements if there are no functional problems. For example, multiple transistors used as switches can sometimes be connected in series or parallel. Additionally, capacitors are sometimes segmented and configured in multiple locations.

[0064] Furthermore, sometimes a single conductor serves multiple functions, such as wiring, electrodes, and terminals; therefore, multiple names may be used for the same element in this specification. Additionally, even when elements are shown as directly connected in a circuit diagram, they may actually be connected by more than one conductor; this configuration is also included in the scope of direct connections in this specification.

[0065] In this specification, "connection" includes, for example, "electrical connection." Note that sometimes "electrical connection" is used to describe the connection relationship of circuit elements as an object. Furthermore, "electrical connection" includes both "direct connection" and "indirect connection." "A and B directly connected" means that A and B are connected without any circuit elements (e.g., transistors, switches, etc. Note that wiring is not a circuit element). On the other hand, "A and B indirectly connected" means that A and B are connected through more than one circuit element.

[0066] For example, assuming a circuit including A and B is operating, if there are opportunities during circuit operation where electrical signals are exchanged or potentials interact between A and B, such a circuit can be defined as "A and B are indirectly connected". Furthermore, even if there are times during circuit operation where no electrical signals are exchanged or potentials interact between A and B, the opportunity where electrical signals are exchanged or potentials interact between A and B can still be defined as "A and B are indirectly connected".

[0067] An example of "A and B being indirectly connected" is a case where A and B are connected through the source and drain of more than one transistor. On the other hand, an example where "A and B being indirectly connected" cannot be said is a case where there is an insulator in the path from A to B. Specifically, this includes cases where a capacitor is connected between A and B, and cases where there is a gate insulating film of a transistor between A and B. Therefore, it cannot be said that "the gate (A) of a transistor is indirectly connected to the source or drain (B) of the transistor."

[0068] As another example where it cannot be said that "A and B are indirectly connected", there is the following situation: multiple transistors are connected through the source and drain along the path from A to B, and a fixed potential V is supplied from the power supply, GND, etc. to the nodes between the transistors and other transistors.

[0069] (Implementation Method 1)

[0070] This embodiment describes a display device and electronic device according to one aspect of the present invention.

[0071] One aspect of the present invention is a display device with high light extraction efficiency. The display device includes a light-emitting element (also called a light-emitting device) as the display element, and the light-emitting element includes a first insulating layer with light transmittance and a plano-convex lens that is circular or oblong when viewed from above.

[0072] While placing plano-convex lenses on the light-emitting elements can improve the brightness of the display device from the front, it also increases the viewing angle dependence of the display quality. In particular, in pixel arrangements with different shapes for each sub-pixel, such as S-stripes, color shifts corresponding to the viewing angle are more likely to occur.

[0073] Therefore, in one aspect of the present invention, a combination is proposed that is less prone to chromaticity shift in various aspects of the light-emitting element, the first insulating layer, and the plano-convex lens.

[0074] By using the combination of the light-emitting element, the first insulating layer, and the plano-convex lens as provided in this invention, the light emitted by the light-emitting element can be efficiently emitted in the front direction, thereby improving the light extraction efficiency of the display device. Therefore, the voltage applied to the light-emitting element can be suppressed, thereby improving the reliability of the light-emitting element and suppressing its power consumption.

[0075] Furthermore, by using a combination of various light-emitting elements, a first insulating layer, and a plano-convex lens as proposed in this invention, the angle dependence of chromaticity shift can be reduced, thereby improving the visibility of XR devices and the like.

[0076] Figure 1This is an example of a perspective view of a display device according to one aspect of the present invention, showing an example of a lens 102 (lens 102R, 102G, 102B) disposed on a light-emitting element included in the stack 100, separated by an insulating layer 103. Pixel 101 includes a sub-pixel 105R having a light-emitting element emitting red light, a sub-pixel 105G having a light-emitting element emitting green light, and a sub-pixel 105B having a light-emitting element emitting blue light. Lens 102R is disposed on sub-pixel 105R, lens 102G is disposed on sub-pixel 105G, and lens 102B is disposed on sub-pixel 105B. Note that the stack 100 includes the constituent elements of pixel 101.

[0077] Lens 102 is a plano-convex lens, and because its size is tiny, corresponding to the size of a pixel, it is also called a microlens. In addition, a structure in which plano-convex lenses are regularly arranged on a surface is also called an MLA (microlens array).

[0078] The insulating layer 103 is disposed between the light-emitting element and the lens 102, and is transparent to visible light. Since the insulating layer 103 is located in the optical path, it interacts with the light emitted by the light-emitting element through the lens 102.

[0079] One aspect of the plano-convex lens of the present invention has a structure that separates sub-pixels. Therefore, this plano-convex lens is easily applied to situations where the sub-pixels included in a pixel have different shapes. Note that in this embodiment, a typical example of pixels using an S-striped arrangement is given as an example of sub-pixel shapes being different, but other examples are also included. Figure 2A In addition to the stripe arrangement shown, Delta arrangement, zigzag arrangement, Pentile arrangement, Diamond arrangement, etc. can also be used, and there are no restrictions on the shape of the sub-pixels.

[0080] In addition, this plano-convex lens can also be used for pixels that include light-receiving elements. Figure 2B This is an example including sub-pixels 105R, 105G, 105B, and 105S. Note that although in Figure 2B The diagram shows a method of adding subpixel 105S to pixels arranged in an S-stripe pattern, but subpixel 105S can also be added to pixels arranged in other ways as described above.

[0081] Subpixel 105S includes a light-receiving element, on which a lens 102S is disposed. The light-receiving element can be used for functions such as scanners, fingerprint, palm print, and face recognition, touch sensors, blink detection, and gaze detection. By including the lens 102S, light incident from the outside or reflected light emitted by the subpixel including the light-emitting element can be efficiently extracted, thereby improving the sensitivity of the aforementioned functions.

[0082] Here, the S-striped arrangement is described. Each pixel in the S-striped arrangement includes a first sub-pixel to a third sub-pixel with different emission colors. The first and second sub-pixels are arranged adjacent to each other in a first direction, and the third sub-pixel is arranged adjacent to both the first and second sub-pixels in a second direction perpendicular to the first direction.

[0083] S-shaped stripe arrangements, for example, can reduce the area between sub-pixels compared to stripe structures, thus making it easier to increase the aperture ratio and giving them an advantage in achieving high brightness in display panels.

[0084] Figure 3A This is an example of a top view of S-shaped stripe arrangement of pixels, showing the layout of pixels 101 that can be used in a display panel with 5009 ppi. Pixel 101 includes sub-pixels 105R with light-emitting elements emitting red light (e.g., wavelengths from 625 nm to 780 nm), sub-pixels 105G with light-emitting elements emitting green light (e.g., wavelengths from 500 nm to 565 nm), and sub-pixels 105B with light-emitting elements emitting blue light (e.g., wavelengths from 450 nm to 485 nm).

[0085] The lifespan of a light-emitting element is related to the current density during light emission. Therefore, reducing the size of sub-pixels, which include highly reliable light-emitting elements, decreases the occupied area (element area) within the pixel, allowing for an increase in current density to achieve the desired brightness. Conversely, using sub-pixels with less reliable light-emitting elements increases the occupied area within the pixel, allowing for a decrease in current density to achieve the desired brightness.

[0086] For example, when the reliability of the blue light-emitting element is the lowest and the reliability of the red light-emitting elements and the green light-emitting elements are of equal quality, such as Figure 3A As shown, sub-pixel 105B occupies the largest area. Furthermore, sub-pixels 105R and 105G occupy approximately the same area. Thus, it is preferable to achieve an overall long lifespan by varying the area of ​​the sub-pixels according to their emission color.

[0087] Because reflective and refractive optical systems used in VR devices utilize selective reflection of polarized light, their light utilization efficiency is insufficient. Furthermore, AR devices require high visibility even in strong ambient light. Additionally, display panels for XR devices are required to have a resolution of 2000 ppi or higher to avoid the screen-door effect. On the other hand, as pixel size decreases, aperture ratio decreases. Therefore, when the current density flowing through the light-emitting element remains constant, the amount of light incident on the optical system becomes insufficient. Consequently, higher brightness is required for the display panel.

[0088] To improve the brightness of the front of a display panel, it is effective to place a convex lens on the light-emitting element. A portion of the light emitted by the light-emitting element is emitted at an angle and cannot be extracted to the outside due to total internal reflection by the interface within the display panel or reflection or absorption by the structure. By placing a convex lens, the light emitted from the light-emitting element at an angle can be refracted towards the top surface of the display panel. In other words, the brightness of the front can be improved.

[0089] Notice, Figure 3A An example is shown where the size of lens 102 (equivalent to the area of ​​one side of the plane of a plano-convex lens) is larger than the size of the sub-pixel (equivalent to the area of ​​the opening from which light is emitted from the light-emitting element). The lens 102 is circular or oblong when viewed from above, and this structure is effective in that it allows light emitted from the light-emitting element to be efficiently incident on the lens.

[0090] Note that a circle is not limited to a perfect circle; it can also have multiple curvatures around its circumference. Additionally, an oblong shape is a form that is modified by having the first side of a quadrilateral and the second side opposite to it having the same curvature.

[0091] The relationship between the size of the subpixel and the size of the lens is not limited to Figure 3A As shown. For example, as Figure 3B As shown, the end of the lens can also be provided in a manner that connects to the sub-pixel. Alternatively, as... Figure 3C As shown, a portion of a subpixel can also be positioned on the outer side of the lens end. Sometimes, due to pixel size or manufacturing process limitations, even... Figure 3A The design shown has also become Figure 3B or Figure 3C The structure shown. In Figure 3B In the middle, one can obtain the same as Figure 3A The same level of effect. Additionally, in Figure 3C In this process, most of the light emitted from the light-emitting element is incident on the lens 102, thus the effect of the lens 102 can be fully received.

[0092] also, Figures 3A to 3CThis example illustrates that subpixel 105R and subpixel 105G have the same size, and lens 102R and lens 102G have the same size, but it is not limited to this. For example, as... Figure 3D As shown, the size of sub-pixel 105R can also be smaller than the size of sub-pixel 105G, and the size of lens 102R can be smaller than the size of lens 102G.

[0093] In addition, Figures 3A to 3D In the image, sub-pixels 105R and 105G appear to be approximately square when viewed from above, but are not limited to this shape. For example, as shown... Figure 3E As shown, sub-pixels 105R and 105G can also be approximately rectangular in shape when viewed from above. In this case, lenses 102R and 102G can be oval in shape when viewed from above.

[0094] Note that an approximate square refers to a shape formed by combining squares, shapes deformed with the corners of a square having curvature, and shapes deformed with one or more sides of a square having curvature. Similarly, an approximate rectangle refers to a shape formed by combining rectangles, shapes deformed with the corners of a rectangle having curvature, and shapes deformed with one or more sides of a rectangle having curvature. Additionally, approximate squares and approximate rectangles can also be referred to as approximate squares. Furthermore, the shape of a sub-pixel when viewed from above is not limited to an approximate square; it can also be a circle or an oblong. By using circles or oblong shapes, the lens can act more efficiently on the light emitted by the light-emitting element.

[0095] Figure 3D and Figure 3E The structure can be used, for example, in cases where the reliability of the light-emitting element included in subpixel 105G is lower than that of the light-emitting element included in subpixel 105R.

[0096] Here is an example of the simulation results of the front brightness of a display panel with lenses placed on sub-pixels.

[0097] like Figure 4A As shown, the simulation model consists of S-shaped stripe pixels. The top-view shapes of lenses 102R and 102G are the size inscribed in a square that divides the square pixel into four equal parts. The top-view shape of lens 102B is the size inscribed in a rectangle that divides the square pixel into two equal parts. Furthermore, the radius of curvature of the curved region of lens 102B is the same as that of lenses 102R and 102G. Additionally, in the model, the sub-pixel size is the size inscribed in the top-view shape of lens 102.

[0098] In the above model, when lenses 102R and 102G are circular in shape when viewed from above, and the radius of the circle is r, then sub-pixels 105R and 105G are squares with one side of 2r / √2 when viewed from above. Furthermore, when lens 102B is an oblong shape when viewed from above, and the radius of curvature of the curved portion of the oblong is r, then sub-pixel 105B is a rectangle with a short side of 2r / √2 and a long side of 2r(1+1 / √2) when viewed from above.

[0099] In addition, such as Figure 4B As shown in the perspective view, lenses 102R and 102G, which are located on sub-pixels 105R and 105G respectively, are hemispherical lenses HL (height r) with a circular shape of radius r when viewed from above. Lens 102B, which is located on sub-pixel 105B, is a cylindrical lens SL (height r) with an elongated oval shape with curvature of radius r at both ends when viewed from above.

[0100] Figure 5 This is a model illustrating the positional relationships of the constituent elements used in the calculation and the refractive index n of each constituent element. Lens 102 is located on a transparent insulating layer 103 disposed on the light-emitting surface LS of the light-emitting element included in the sub-pixel. A transparent insulating layer 104 is disposed on lens 102 and insulating layer 103. Furthermore, a thin film FLM is disposed on insulating layer 104. Additionally, a light-receiving surface LR is disposed on the thin film FLM, assuming air is present between them.

[0101] The refractive index n of insulating layer 103 and lens 102 is 1.58, the refractive index of insulating layer 104 is 1.41, the refractive index n of thin film FLM is 1.5, and the refractive index n of air is 1. Furthermore, the distance between the top surface of thin film FLM and the light-receiving surface LR is 350 mm.

[0102] Figure 6A The results are the calculated front brightness of the display panel using the above model. The front brightness multiplier of the lensless display panel is shown separately for each resolution when the front brightness is 1.

[0103] The calculations were performed using LightTools, a lighting analysis simulator manufactured by Synopsys. Furthermore, assuming that the light source for each sub-pixel is an organic EL element, the emission spectrum and orientation pattern of the actual element structure were calculated using Setofos, an organic EL device simulator manufactured by Fluxim.

[0104] like Figure 6AAs shown, it can be seen that placing a convex lens on the sub-pixel can improve the brightness of the front side. Note that there is a tendency for higher sharpness to result in a higher magnification of the front brightness. This is because as the pixel size decreases, the lens size also decreases, and the curvature increases, which allows light to be refracted more strongly towards the front side.

[0105] To improve the brightness of the front side of the display panel, lenses with high curvature, such as hemispherical lenses that are expected to refract light significantly, are preferred. In lenses with high curvature, the force of light emitted from the light-emitting element in the oblique direction is strong, thus easily improving the brightness of the front side.

[0106] However, in S-shaped stripe arrangements, due to the non-uniformity of the size and lens shape of each sub-pixel, and the low symmetry of the sub-pixel configuration, the balance of light emitted from the light-emitting elements of each sub-pixel varies according to direction. Therefore, color shift easily occurs when viewing the display panel from an angle. In XR devices, in addition to light traveling straight from the display panel, light traveling to a certain extent in an angled direction is also incident on the reflective and refractive optical system and utilized. Therefore, it is necessary to suppress color shift of the light within the utilized angle.

[0107] Figure 6B It is shown Figure 4A , Figure 4B and Figure 5 The diagram shows the angle dependence of the chromaticity shift when the model is displayed in white, where the horizontal axis represents the angle and the vertical axis represents the distance between coordinates (Δu'v') in the u'v' chromaticity diagram.

[0108] like Figure 6B As shown, when taking light emitted directly in front (angle 0°) as the reference, the larger the angle, the larger Δu'v'. As for Δu'v', the industry specification stipulates that the allowable range of chromaticity shift is 0.02, which needs to be below Δu'v' within the angle range utilized by the XR equipment.

[0109] The angle at which chromatic aberration should be suppressed varies depending on the specifications of the display panel and the combined reflective and refractive optical system. When the angle of the axis perpendicular to the display surface of the display panel is set to 0°, for example, when using a 3000ppi display panel with a viewing angle (FOV) of 70°, it is preferable to satisfy Δu'v'=0.02 or less within a range of at least -20° to +20°. Furthermore, when using a 5000ppi display panel with a viewing angle (FOV) of 70°, it is preferable to satisfy Δu'v'=0.02 or less within a range of -30° to +30°. Moreover, these are more preferred conditions; display panels that do not meet the above ranges can also be used to manufacture products such as XR devices.

[0110] like Figure 7A and Figure 7B As shown, the entire 360° area, including both the x-direction (the direction where lens 102R and lens 102B are adjacent) and the y-direction (the direction where lens 102R and lens 102G are adjacent) and the tilt direction, must satisfy the condition Δu'v'=0.02 or less within the aforementioned angle range. Note that at angles outside the aforementioned range, since no image is formed in the eye, Δu'v'=0.02 or more can also be satisfied.

[0111] To explore the condition that Δu'v' = 0.02 or less is satisfied within the range of -30° and +30° in both the x and y directions, under the conditions shown in Table 1, the height (t) of lens 102 is changed. 102 ) and the thickness of insulating layer 103 (t) 103 Simulation (refer to) Figure 5 ).

[0112] [Table 1]

[0113] When the height of the hemispherical lens (equivalent to the radius r) is set to h, the height of lens 102 (t) 102 The conditions are h, 0.75h, 0.5h, and 0.25h. Additionally, the thickness (t) of the insulating layer 103... 103 The conditions are 1.0 μm, 2.0 μm, 3.0 μm, 3.4 μm, and 4.0 μm. Other parameters of the model used for simulation are... Figure 4A , Figure 4B and Figure 5 The explanation is the same.

[0114] Figure 8A , Figures 8B to 12A , Figure 12B The simulation results of chromaticity shift when displaying white under the conditions shown in Table 1 are presented. Figure 13A As shown in the figures (A), each figure schematically illustrates the state of color shift when the display panel is viewed at angles from -90° to +90° in the x and y directions, respectively. Figure 13B This diagram shows an example of a small color shift; a weaker display of shading indicates a smaller color shift. Additionally, Figure 13C This is a diagram showing an example of a large chromaticity shift; a stronger display of shading indicates a larger chromaticity shift.

[0115] in addition, Figure 8A , Figures 8B to 11A , Figure 11B The figures (B) in the diagram are represented by simple numerical values. Figure 14A and Figure 14BThe graph of the simulation results shows that the condition Δu'v'=0.02 is satisfied at least when the absolute value is 30° as "≥30°", the condition Δu'v'=0.02 is satisfied when the absolute value is greater than 20° and less than 30° as "<30°", and the condition Δu'v'=0.02 is satisfied when the absolute value is less than 20° as "<20°". Figure 14A and Figure 14B The t value shows the chromaticity shift in a 5009ppi display panel. 103 Thickness dependence, Figure 14A Indicates the x-direction, Figure 14B The y-direction is shown. Additionally, the simulation results of the front brightness magnification (with a display panel without a lens as 1) under the conditions shown in Table 1 are shown in parentheses.

[0116] exist Figure 8A and Figure 8B As shown in the 2000ppi case, the differences within the simulation conditions are small, and the temperature is "≥30°" under all conditions.

[0117] It can be said that the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 The higher the value of ), the better the front brightness ratio.

[0118] according to Figure 8B In order to achieve the effect of satisfying Δu'v'=0.02 or less within the range of -30° to +30° and improving the front brightness in a display panel with a resolution of 2000ppi, it is preferable to adjust the height (t) of lens 102. 102 The thickness (t) of the insulating layer 103 is set to below h. 103 The value is set to below 4.0 μm.

[0119] exist Figure 9A and Figure 9B In the case of 3207pi shown, at the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 The value of ) is "<30°" under most conditions, and the condition of chromaticity shift is less than 2000ppi.

[0120] It can be said that the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 The higher the value of ), the better the front brightness magnification, but at the lens height (t) 102 The thickness of the insulating layer 103 is 0.5h or more (t) 103 When the value is above 3.0 μm, it tends to be basically saturated.

[0121] according to Figure 9BIn order to achieve the effect of improving front brightness while satisfying Δu'v'=0.02 within the range of -30° to +30° on a display panel with a resolution of 3207ppi, it is preferable to adjust the height (t) of lens 102. 102 The thickness (t) of the insulating layer 103 is set to below h. 103 The height (t) of lens 102 is set to 3.0 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 3.0 μm or less. 102 The thickness (t) of the insulating layer 103 is set to below 0.75h. 103 The height (t) of lens 102 is set to 3.4 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 3.4 μm or less. 102 The thickness of the insulating layer 103 (t) is set to below 0.5h. 103 The value is set to below 4.0 μm.

[0122] exist Figure 10A and Figure 10B In the case of 5009ppi shown, at the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 The result of "<20°" is obtained when the value of ) is large, which satisfies the condition of chromaticity shift of less than 3207ppi.

[0123] It can be said that the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 The higher the value of ), the better the front brightness magnification, but at the lens height (t) 102 The thickness of the insulating layer 103 is 0.5h or more (t) 103 When the value is above 2.0 μm, it exhibits a tendency to become basically saturated.

[0124] according to Figure 10B In order to achieve the effect of improving front brightness while satisfying Δu'v'=0.02 within the range of -30° to +30° on a display panel with a resolution of 5009ppi, it is preferable to adjust the height (t) of lens 102. 102 The thickness (t) of the insulating layer 103 is set to below h. 103 The height (t) of lens 102 is set to 2.0 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 2.0 μm or less. 102 The thickness (t) of the insulating layer 103 is set to below 0.25h. 103 The value is set to below 4.0 μm.

[0125] exist Figure 11A and Figure 11B In the case of 7056ppi shown, with the thickness of insulating layer 103 (t) 103When the value of ) is large, the results of "<20°" account for the majority, and the cases that meet the chromaticity shift condition are less than 5009ppi.

[0126] It can be said that the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 The higher the value of ), the better the front brightness magnification, but at the lens height (t) 102 The thickness of the insulating layer 103 is 0.5h or more (t) 103 When the value is above 2.0 μm, it exhibits a tendency to become basically saturated.

[0127] according to Figure 11B In order to achieve the effect of improving front brightness while satisfying Δu'v'=0.02 within the range of -30° to +30° on a display panel with a resolution of 7056ppi, it is preferable to adjust the height (t) of lens 102. 102 The thickness (t) of the insulating layer 103 is set to below 0.75h. 103 The height (t) of lens 102 is set to 1.0 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 1.0 μm or less. 102 The thickness of the insulating layer 103 (t) is set to below 0.5h. 103 The height (t) of lens 102 is set to 2.0 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 2.0 μm or less. 102 The thickness (t) of the insulating layer 103 is set to below 0.25h. 103 The value is set to below 4.0 μm.

[0128] exist Figure 12A and Figure 12B In the case of 10000ppi shown, at the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 When the value of ) is small, the chromaticity shift increases.

[0129] It can be said that the thickness of the insulating layer 103 (t) 103 When the lens height (t) is 1.0μm and 2.0μm, the lens height (t) 102 The higher the value of ), the better the front brightness ratio. In the thickness of the insulating layer 103 (t... 103 When the value is 3.0 μm or higher, the lens height (t) 102 The value is above 0.25h, indicating a saturation tendency.

[0130] according to Figure 12B In order to achieve the effect of satisfying Δu'v'=0.02 or less within the range of -30° to +30° and improving the front brightness in a display panel with a resolution of 10000ppi, it is preferable to adjust the height (t) of lens 102. 102The thickness (t) of the insulating layer 103 is set to below 0.75h. 103 The height (t) of lens 102 is set to 1.0 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 1.0 μm or less. 102 The thickness (t) of the insulating layer 103 is set to below 0.25h. 103 The value is set to below 2.0μm.

[0131] Based on the above results, the conditions in Table 2 are preferred. Note that although the sharpness is shown in range format, the simulation results with the highest values ​​are applied. That is, the minimum conditions are shown, but in practice, t can sometimes be set within a wider range. 102 and t 103 .

[0132] [Table 2]

[0133] Furthermore, the above condition is based on Δu'v'=0.02 or less within the range of -30° to +30°, while Table 3 is based on Δu'v'=0.02 or less within the range of -20° to +20°.

[0134] [Table 3]

[0135] Note that, as Figure 4A As shown, the above simulation results are obtained using a model inscribed in the shape of the sub-pixels and the shape of the lens 102 when viewed from above. However, as... Figure 3A As shown, sometimes the sub-pixel's shape is smaller than the lens 102's shape due to design reasons or manufacturing processes. As an example, such as... Figure 15 The diagram illustrates the simulation results when using a model where the sub-pixel shape is a square with a side length of lens 102 and a radius r when viewed from above. The dimensions of the light-emitting elements are shown in Table 4.

[0136] [Table 4]

[0137] In addition, with Figure 4A Similarly, the simulation model consists of S-shaped stripe pixels. When viewed from above, the shapes of lenses 102R and 102G are the size inscribed in a square that divides the square pixels into four equal parts. The shape of lens 102B, when viewed from above, is the size inscribed in a rectangle that divides the square pixels into two equal parts. Furthermore, the radius of curvature of the curved region in lens 102B is the same as that in lenses 102R and 102G.

[0138] In the above model, when lenses 102R and 102G are circular in shape with a radius of r when viewed from above, sub-pixels 105R and 105G are squares with one side of radius r when viewed from above. Furthermore, when lens 102B is an oblong shape in shape when viewed from above, and the radius of curvature of the curved portion of the oblong shape is r, sub-pixel 105B is a rectangle with a shorter side of radius r and a longer side of radius 3r when viewed from above.

[0139] Figure 16A , Figures 16B to 20A , Figure 20B The simulation results above are shown. Note that under the conditions in Table 2, there is a tendency for the frontal brightness magnification to increase compared to the conditions in Table 1. This is because the ratio of the light-emitting element area to the lens area is reduced, making it easier for the light emitted by the light-emitting element to enter the lens. Under the conditions in Table 2, the area of ​​the light-emitting element is smaller than that under the conditions in Table 1, therefore the frontal brightness is not necessarily greater than that under the conditions in Table 1.

[0140] exist Figure 16A and Figure 16B The difference within the simulation conditions is small at the 2000ppi level shown, and at t 102 For h and t 103 The value is "<30°" for 4.0 μm, and "≥30°" for all other conditions.

[0141] It can be said that the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 The higher the value of ), the better the front brightness ratio.

[0142] according to Figure 16B In order to achieve the effect of satisfying Δu'v'=0.02 or less within the range of -30° to +30° and improving the front brightness in a display panel with a resolution of 2000ppi, it is preferable to adjust the height (t) of lens 102. 102 The thickness (t) of the insulating layer 103 is set to below h. 103 The height (t) of lens 102 is set to 3.4 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 3.4 μm or less. 102 The thickness (t) of the insulating layer 103 is set to below 0.75h. 103 The value is set to below 4.0 μm.

[0143] exist Figure 17A and Figure 17B In the case of 3207pi shown, the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 The larger the value of ), the more conditions for "<30°" are met, and the fewer cases where the chromaticity shift is less than 2000ppi.

[0144] It can be said that the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 The higher the value of ), the better the front brightness ratio.

[0145] according to Figure 17B In order to achieve the effect of improving front brightness while satisfying Δu'v'=0.02 within the range of -30° to +30° on a display panel with a resolution of 3207ppi, it is preferable to adjust the height (t) of lens 102. 102 The thickness (t) of the insulating layer 103 is set to below h. 103 The height (t) of lens 102 is set to 2.0 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 2.0 μm or less. 102 The thickness (t) of the insulating layer 103 is set to below 0.75h. 103 The height (t) of lens 102 is set to 3.0 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 3.0 μm or less. 102 The thickness of the insulating layer 103 (t) is set to below 0.5h. 103 The height (t) of lens 102 is set to 3.4 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 3.4 μm or less. 102 The thickness (t) of the insulating layer 103 is set to below 0.25h. 103 The value is set to below 4.0 μm.

[0146] exist Figure 18A and Figure 18B In the case of 5009ppi shown, at the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 The result of "<20°" is obtained when the value of ) is large, which satisfies the condition of chromaticity shift of less than 3207ppi.

[0147] It can be said that the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 The higher the value of ), the better the front brightness magnification, but at the lens height (t) 102 The thickness of the insulating layer 103 is 0.75h or more (t) 103 When the value is above 3.0 μm, it tends to be basically saturated.

[0148] according to Figure 18B In order to achieve the effect of improving front brightness while satisfying Δu'v'=0.02 within the range of -30° to +30° on a display panel with a resolution of 5009ppi, it is preferable to adjust the height (t) of lens 102. 102 The thickness (t) of the insulating layer 103 is set to below h. 103The height (t) of lens 102 is set to 1.0 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 1.0 μm or less. 102 The thickness (t) of the insulating layer 103 is set to below 0.75h. 103 The height (t) of lens 102 is set to 2.0 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 2.0 μm or less. 102 The thickness of the insulating layer 103 (t) is set to below 0.5h. 103 The value is set to below 3.0μm.

[0149] exist Figure 19A and Figure 19B In the case of 7056ppi shown, with the thickness of insulating layer 103 (t) 103 When the value of ) is large, the results of "<20°" account for the majority, and the cases that meet the chromaticity shift condition are less than 5009ppi.

[0150] It can be said that the thickness of the insulating layer 103 (t) 103 When the lens height (t) is 1.0μm and 2.0μm, the lens height (t) 102 The higher the value of ), the better the front brightness ratio. In the thickness of the insulating layer 103 (t... 103 When the thickness is 3.0 μm to 4.0 μm, relative to the lens height (t) 102 Extreme values ​​appear.

[0151] according to Figure 19B In order to achieve the effect of improving front brightness while satisfying Δu'v'=0.02 within the range of -30° to +30° on a display panel with a resolution of 7056ppi, it is preferable to adjust the height (t) of lens 102. 102 The thickness (t) of the insulating layer 103 is set to below h. 103 The height (t) of lens 102 is set to 1.0 μm or less. Alternatively, preferably, the height (t) of lens 102 is set to 1.0 μm or less. 102 The thickness (t) of the insulating layer 103 is set to below 0.25h. 103 The value is set to below 2.0μm.

[0152] exist Figure 20A and Figure 20B In the case of 10000ppi shown, at the lens height (t) 102 ) and the thickness (t) of the insulating layer 103 103 When the value of ) is small, the chromaticity shift increases.

[0153] It can be said that the thickness of the insulating layer 103 (t) 103 When the lens height (t) is 1.0 μm, 102 The higher the value of ), the better the front brightness ratio. In the thickness of the insulating layer 103 (t...103 When the thickness is between 2.0 μm and 4.0 μm, relative to the lens height (t) 102 Extreme values ​​appear.

[0154] according to Figure 20B In order to achieve the effect of satisfying Δu'v'=0.02 or less within the range of -30° to +30° and improving the front brightness in a display panel with a resolution of 10000ppi, it is preferable to adjust the height (t) of lens 102. 102 The thickness of the insulating layer 103 (t) is set to below 0.5h. 103 The value is set to below 1.0 μm.

[0155] Based on the above results, the conditions in Table 5 are preferred. Note that although sharpness is shown in range format, simulation results with the highest sharpness value are applied. That is, the minimum conditions are shown, but in practice, t can sometimes be set within a wider range. 102 and t 103 .

[0156] [Table 5]

[0157] Furthermore, the above condition is based on Δu'v'=0.02 or less within the range of -30° to +30°, while Table 6 is based on Δu'v'=0.02 or less within the range of -20° to +20°.

[0158] [Table 6]

[0159] As described above, by using a display panel employing the conditions shown in Tables 2, 3, 5, or 6, light emitted by the light-emitting element can be efficiently emitted in the forward direction, thereby improving the light extraction efficiency of the display device. Therefore, the voltage applied to the light-emitting element can be suppressed, thereby improving the reliability of the light-emitting element and reducing its power consumption. Furthermore, the angle dependence of color shift can be reduced, thereby improving the visibility of XR devices and the like.

[0160] One embodiment of the present invention preferably employs an MML (Metal Mask Less) structure, where the light-emitting layer is formed by photolithography without using an FMM (Fine Metal Mask). Compared to light-emitting elements manufactured using an FMM, MML structure light-emitting elements can achieve a higher aperture ratio, thereby enabling high brightness or low power consumption light emission. Another embodiment of the present invention combines an MML structure light-emitting element with a convex lens to further improve light extraction efficiency.

[0161] Figure 21A It is equivalent to Figure 21B The diagram shows a cross-sectional view of pixel 101 along line A1-A2. Pixel 101 includes subpixels 105R, 105G, and 105B; however, the description of subpixel 105R is omitted here, and only subpixels 105G and 105B will be described. For information on subpixel 105R, please refer to the descriptions of subpixels 105G and 105B.

[0162] The light-emitting element 110G included in sub-pixel 105G and the light-emitting element 110B included in sub-pixel 105B are disposed on substrate 161. In addition to the support, substrate 161 also includes the constituent elements of pixel circuits.

[0163] As light-emitting elements 110G and 110B, OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) are preferably used, for example. In addition to organic compounds, inorganic compounds (quantum dot materials, etc.) can also be used as the light-emitting material contained in the EL element.

[0164] Light-emitting element 110G includes a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113. Light-emitting element 110B includes a pixel electrode 111B, an organic layer 112B, a common layer 114, and a common electrode 113. Light-emitting elements 110G and 110B share the common layer 114 and the common electrode 113.

[0165] The organic layer 112G included in the light-emitting element 110G contains a light-emitting organic compound that emits at least green light. The organic layer 112B included in the light-emitting element 110B contains a light-emitting organic compound that emits at least blue light. Organic layers 112G and 112B may each be referred to as EL layers, and each includes at least a layer (light-emitting layer) containing a light-emitting material.

[0166] When describing the common elements between light-emitting element 110G and light-emitting element 110B, they will sometimes be referred to as light-emitting element 110. Similarly, when describing the common elements between constituent elements such as organic layer 112G and organic layer 112B that are distinguished by letters, symbols with omitted letters will sometimes be used.

[0167] The organic layer 112 and the common layer 114 may each independently include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 112 has a stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer stacked from the pixel electrode 111 side, and the common layer 114 includes an electron injection layer.

[0168] Pixel electrodes 111G and 111B are both provided in each light-emitting element. Additionally, the common electrode 113 and common layer 114 are a single layer shared by all light-emitting elements. One of the pixel electrodes and the common electrode 113 uses a conductive film that is transparent to visible light, while the other uses a reflective conductive film. By making each pixel electrode transparent and the common electrode 113 reflective, a bottom-emitting type (bottom-emitting structure) display device can be realized; conversely, by making each pixel electrode reflective and the common electrode 113 transparent, a top-emitting type (top-emitting structure) display device can be realized. Furthermore, by making both the pixel electrode and the common electrode 113 transparent, a double-sided emitting type (double-sided emitting structure) display device can also be realized.

[0169] A protective layer 121 is provided on the common electrode 113 to cover the light-emitting elements 110G and 110B. The protective layer 121 has the function of preventing water and other impurities from diffusing from above to each light-emitting element.

[0170] The end of the pixel electrode 111 preferably has a tapered shape. When the end of the pixel electrode 111 has a tapered shape, the organic layer 112 disposed along the end of the pixel electrode 111 may also have an inclined portion. By making the end of the pixel electrode 111 tapered, the coverage of the organic layer 112 disposed across the end of the pixel electrode 111 can be improved. In addition, by making the side of the pixel electrode 111 tapered, foreign matter (e.g., dust or particles) from the manufacturing process can be easily removed by washing or other processes, which is therefore preferred.

[0171] Note that in this specification, a tapered shape refers to a shape in which at least a portion of the side surface of a constituent element is inclined relative to the substrate surface. For example, it is preferable to have a region where the angle (also called the cone angle) formed by the inclined side surface and the substrate surface is less than 90°.

[0172] The organic layer 112 is processed into an island shape, for example, using a resist mask formed by photolithography. Therefore, the organic layer 112 has a shape at its ends where the angle between the top surface and the side surface is close to 90°. On the other hand, the thickness of organic films formed using FMM (Fine Metal Mask) tends to decrease towards the ends, for example, its top surface is formed in a slope within a range of 1 μm to 10 μm from the ends, making it difficult to distinguish between the top surface and the side surface.

[0173] The space between two adjacent light-emitting elements includes an insulating layer 124, an insulating layer 125, and a resin layer 126.

[0174] Between two adjacent light-emitting elements, the sides of each organic layer 112 are separated by a resin layer 126. The resin layer 126 is located between the two adjacent light-emitting elements and is disposed in such a way that it fills the ends of each organic layer 112 and the area between the two organic layers 112. The top surface of the resin layer 126 has a smooth convex shape, and a common layer 114 and a common electrode 113 are disposed to cover the top surface of the resin layer 126.

[0175] The resin layer 126 is used as a planarization film to fill the step between two adjacent light-emitting elements. By providing the resin layer 126, the common electrode 113 can be prevented from being insulated on the organic layer 112 due to the phenomenon of the step being broken at the end of the organic layer 112 (also known as disconnection).

[0176] Furthermore, the resin layer 126 insulates each of the organic layers 112 included in adjacent light-emitting elements 110. This reduces leakage current through the organic layers 112 between adjacent light-emitting elements, thereby suppressing unwanted light emission caused by crosstalk.

[0177] As resin layer 126, an insulating layer containing organic materials can be suitable. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of the above resins can be used as resin layer 126. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can also be used as resin layer 126.

[0178] Alternatively, a photosensitive resin can be used as the resin layer 126. A photoresist can also be used as the photosensitive resin. The photosensitive resin can be either a positive or negative material.

[0179] The resin layer 126 may also contain materials that absorb visible light. For example, the resin layer 126 itself may be composed of materials that absorb visible light, and the resin layer 126 may also contain pigments that absorb visible light. As the resin layer 126, for example, resins that can be used as color filters that transmit red, blue, or green light and absorb other light; or resins that contain carbon black as pigments and are used as black matrices; etc.

[0180] By absorbing light emitted from the light-emitting element in an inclined direction through the resin layer 126, light leakage (stray light) from the light-emitting element through the resin layer 126 to adjacent light-emitting elements can be suppressed. Therefore, the display quality of the display device can be improved. In addition, the display quality can be improved even without using a polarizer in the display device, so it is possible to achieve a lighter and thinner display device.

[0181] The insulating layer 125 is in contact with the side surface of the organic layer 112. Additionally, the insulating layer 125 covers the upper end of the organic layer 112. Furthermore, a portion of the insulating layer 125 is in contact with the top surface of the substrate 161.

[0182] An insulating layer 125 is located between the resin layer 126 and the organic layer 112 and serves as a protective film to prevent the resin layer 126 from contacting the organic layer 112. When the organic layer 112 comes into contact with the resin layer 126, the organic layer 112 may be dissolved due to organic solvents or the like used in forming the resin layer 126. Therefore, by providing an insulating layer 125 between the organic layer 112 and the resin layer 126, the sides of the organic layer 112 can be protected.

[0183] The insulating layer 125 can be an insulating layer containing inorganic materials. Inorganic insulating films such as oxide insulating films, nitride insulating films, oxynitride insulating films, and oxynitride insulating films can be used as the insulating layer 125. The insulating layer 125 can be a single-layer structure or a multilayer structure. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. In particular, by using inorganic insulating films such as alumina films, hafnium oxide films, silicon nitride films, and silicon oxide films formed by the ALD method as insulating layer 125, an insulating layer 125 with fewer pinholes and excellent protection of the EL layer can be formed.

[0184] In this specification, etc., "oxynitride" refers to a material in which the oxygen content is greater than the nitrogen content in its composition, while "nitrogen oxide" refers to a material in which the nitrogen content is greater than the oxygen content in its composition. For example, when described as "silicon oxynitride", it refers to a material in which the oxygen content is greater than the nitrogen content in its composition, while when described as "silicon oxynitride", it refers to a material in which the nitrogen content is greater than the oxygen content in its composition.

[0185] The insulating layer 125 can be formed using sputtering, CVD, PLD, ALD, or other methods. The insulating layer 125 is preferably formed using the ALD method, which provides good coverage.

[0186] Alternatively, a reflective film (e.g., a metal film selected from one or more of silver, palladium, copper, titanium, and aluminum) can be provided between the insulating layer 125 and the resin layer 126 to reflect the light emitted by the light-emitting layer. This can further improve the light extraction efficiency.

[0187] The insulating layer 124 is a residual portion of a protective layer (also called a mask layer or sacrificial layer) used to protect the organic layer 112 during etching. The insulating layer 124 can be made of the same material as the aforementioned insulating layer 125. In particular, it is preferable that both the insulating layer 124 and the insulating layer 125 are made of the same material, thereby allowing the use of the same processing equipment.

[0188] In particular, inorganic insulating films such as alumina films, hafnium oxide films, silicon nitride films, and silicon oxide films formed by the ALD method have fewer pinholes, thus providing excellent protection for the EL layer. Therefore, they are suitable for use in insulating layers 125 and 124.

[0189] The protective layer 121 may, for example, have a single-layer structure or a multilayer structure comprising at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide films, silicon oxynitride films, silicon oxynitride films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films. Alternatively, semiconductor or conductive materials such as indium gallium oxide, indium zinc oxide, indium tin oxide, and indium gallium zinc oxide may be used as the protective layer 121.

[0190] Additionally, an insulating layer 103 is provided on the protective layer 121. For example, an organic material suitable for the resin layer 126 can be used as the insulating layer 103. By forming the insulating layer 103, the influence of the uneven shape of the underlying structure can be mitigated, thereby facilitating the formation of structures such as lens arrays. Note that the structure from the substrate 161 to the insulating layer 103 corresponds to... Figure 1 The stacked body 100 shown.

[0191] Lenses 102 (lenses 102G, 102B) serving as plano-convex lenses are disposed on insulating layer 103, overlapping with light-emitting element 110. Furthermore, insulating layer 104 is disposed on lens 102. Lenses 102 are disposed in pairs with light-emitting elements 110. In other words, one lens 102 is disposed for each sub-pixel.

[0192] Lens 102 is positioned above the light-emitting element 110 (in the direction of light emission). Because the light emitted by the light-emitting element 110 has a certain degree of diffusion, light that cannot be extracted to the outside of the display device is lost. Therefore, it is preferable to improve the front brightness of the display device. Since lens 102 has a convex lens shape, it can be made to operate in the direction of focused light. In other words, since the divergence of the light emitted by the light-emitting element can be suppressed, the light extraction efficiency of the display device can be improved. Lens 102 can be manufactured using the same material and process as resin layer 126.

[0193] Figures 22A to 22E This diagram illustrates the manufacturing process of forming the lens 102 on the insulating layer 103.

[0194] First, a photosensitive resin is coated onto the insulating layer 103 and pre-baked to form the resin layer 102a (see reference). Figure 22A As the photosensitive resin, for example, the material used to form the resin layer 126 shown in Embodiment 1 can be used. Furthermore, while an example using a positive photosensitive resin is described here, a negative photosensitive resin can also be used.

[0195] Next, using a photomask 145, the area forming the lens 102 is blocked to expose the resin layer 102a (see reference). Figure 22B When using a negative photosensitive resin, a photomask is used to block the area where the lens 102 does not form.

[0196] Next, a developing process is performed to remove unwanted areas of resin layer 102a, thereby forming resin layer 102b (see reference). Figure 22C Here, since the resin layer 102b is not yet exposed, unreacted components may remain and cause coloring. The visible light transmittance of the lens 102 to which the object is formed is preferably high, so when the lens is colored, the resin layer 102b is exposed to promote the reaction.

[0197] By promoting the reaction, a resin layer 102c with improved permeability can be formed (see reference). Figure 22D Additionally, by performing this exposure after the developing process, the post-baking temperature of the resin layer 102c in subsequent processes can sometimes be reduced. Note that if the resin layer 102b is not colored, the exposure after the developing process can also be omitted.

[0198] Next, the resin layer 102c is reflowed and cured by post-baking, thereby forming lens 102. Figure 22E ).

[0199] Figure 34A and Figure 34B This means that the above manufacturing method is used to form together Figure 3D SEM images of examples of the lens 102 (lens 102R, 102G, 102B) shown. Figure 34A These are planar SEM images, cross-sectional SEM images of B1-B2, and cross-sectional SEM images of C1-C2. Figure 34B This is an aerial SEM image taken with lens 102.

[0200] In actual measurements, it can be seen that: lens 102R is approximately 0.9μm, lens 102G is approximately 1.0μm, and lens 102B is approximately 0.95μm. By using the above manufacturing method to form them together, the lens heights can be made to be approximately the same.

[0201] The insulating layer 104 disposed on the lens 102 is an adhesive layer disposed between it and the substrate 163, and is preferably made of an organic material. For example, an optical adhesive having a refractive index close to that of the glass or thin film that can be used as the substrate 163 can be used.

[0202] The above is an explanation of examples of light-emitting elements and their surrounding structures.

[0203] Notice, Figure 21A An example is shown where lens 102G and lens 102B have the same height, but this is not a limitation. For example, as... Figure 23A As shown, the height of lens 102G can be different from that of lens 102B. The shape of a sub-pixel when viewed from above sometimes varies depending on the emitted color; therefore, a lens of appropriate shape can be set to correspond to the light emitted by each sub-pixel.

[0204] In addition, such as Figure 23B As shown, lenses 102G and 102B can also be joined near their respective ends. To prevent stray light, adjacent lenses are preferably separated from each other; however, by joining adjacent lenses, the width of the lenses is increased, thus increasing the amount of light incident from the light-emitting element 110 onto lens 102. Therefore, the light extraction efficiency of the display panel can be improved. Note that to suppress stray light, the height of the joining portion of the lenses is preferably minimized as much as possible.

[0205] In addition, such as Figure 23CAs shown, the insulating layer 103 and the lens 102 can also be formed using materials with the same refractive index. For example, by using the same resin material to form the insulating layer 103 and the lens 102, the adhesion of the interface can be improved. In addition, by using the same material and standardizing the manufacturing apparatus, manufacturing costs can be reduced.

[0206] In addition, Figure 21A In the structure shown, a structure in which the refractive index of the insulating layer 103, lens 102, and insulating layer 104, which form the path of the light emitted by the light-emitting element 110, decreases sequentially can also be used. Regarding straight-passing light that does not refract, by setting steps where the refractive index decreases sequentially in the direction of light propagation, the refractive index steps at each interface can be reduced, thereby reducing interface reflection. Therefore, the extraction efficiency of straight-passing light can be improved. This effect can be derived from the Flyner formula.

[0207] In addition, appropriate combinations can be made. Figure 21A as well as Figures 23A to 23C The structure shown.

[0208] While it has been shown so far that placing a lens according to one aspect of the present invention on the light-emitting element can improve the light extraction efficiency from the display panel, using a light-emitting element with higher luminous efficiency is also effective in improving the front brightness of the display panel. In principle, tandem organic EL elements increase brightness according to the number of overlapping stages at the same current density, and two tandem organic EL elements can achieve twice the brightness of a single-element light-emitting element.

[0209] Furthermore, since the lifespan of organic EL devices depends on current density, even if the brightness of a series-connected organic EL device is twice that of a single-type organic EL device, its lifespan is equal to that of a single-type organic EL device, provided the current density is the same. In other words, series-connected organic EL devices can be considered an effective technology for increasing the brightness and reliability of organic EL devices.

[0210] Figure 24A This is a block diagram illustrating one aspect of a display device according to the present invention. The display device 20 includes a pixel array 74, circuitry 75, and circuitry 76. The pixel array 74 includes pixels 40 arranged in the column direction and the row direction.

[0211] Pixel 40 may include multiple sub-pixels 71. Sub-pixels 71 have the function of emitting light for display. By making the light emitted by sub-pixels 71 have colors such as R (red), G (green), and B (blue), color display can be performed.

[0212] Sub-pixel 71 includes a light-emitting device that emits unpolarized visible light. As the light-emitting device, EL elements such as OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) are preferably used. Examples of light-emitting materials included in the EL element include fluorescent materials, phosphorescent materials, materials exhibiting thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (quantum dot materials, etc.). Furthermore, LEDs such as Micro LEDs can also be used as the light-emitting device.

[0213] Circuits 75 and 76 are driving circuits used to drive sub-pixel 71. Circuit 75 can be used as a source driving circuit, and circuit 76 can be used as a gate driving circuit. For example, shift register circuits can be used as circuits 75 and 76.

[0214] Note that the display device 20 can be divided into multiple regions, and pixels can be driven in each of the divided regions.

[0215] For example, such as Figure 24B As shown, circuits 75 and 76 can be separately arranged under pixel array 74. In this case, display device 20 has a stacked structure of layers 77 and 78, in which multiple circuits 75 and multiple circuits 76 are respectively arranged, and pixel array 74 is arranged in layer 78 in a manner that overlaps with them.

[0216] By segmenting configuration circuits 75 and 76, the pixel array 74 can be driven by segmented regions. For example, the pixel array 74 can be operated at a different frame rate for a portion of its components. The pixel array 74 can be displayed at a different resolution for a portion of its components, or it can be rendered corresponding to a foveated point.

[0217] Furthermore, by placing the driving circuitry in the lower layer of the pixel array 74, the wiring length can be shortened and the wiring capacitance reduced. This allows for a display device capable of high-speed and low-power operation. Additionally, a narrow bezel design for the display device 20 can be achieved.

[0218] Notice, Figure 24B The configuration and area of ​​circuits 75 and 76 shown are merely examples and can be appropriately modified. Furthermore, a portion of circuits 75 and 76 can also be formed in the same layer as the pixel array 74. Additionally, layer 77 can also house circuits such as storage circuits, arithmetic circuits, and communication circuits.

[0219] In this structure, for example, layer 77 can be disposed on a single-crystal silicon substrate, circuits 75 and 76 can be formed using transistors with silicon contained in the channel formation region (hereinafter referred to as Si transistors), and the pixel circuits included in the pixel array 74 disposed in layer 78 can be formed using transistors with metal oxide contained in the channel formation region (hereinafter referred to as OS transistors). OS transistors can be thin films and stacked on Si transistors.

[0220] Note that, as Figure 24C As shown, a layer 79, in which OS transistors are disposed, may also be included between layer 77 and layer 78. OS transistors forming part of the pixel circuitry included in the pixel array 74 may be disposed in layer 79. Alternatively, OS transistors forming part of circuits 75 and 76 may be disposed. Alternatively, OS transistors forming part of circuits such as storage circuits, arithmetic circuits, and communication circuits that can be disposed in layer 77 may be disposed.

[0221] Furthermore, the shape of the display device 20 when viewed from above is not limited to a rectangle; it can also be, for example... Figure 24D The circle shown. Or, it could be as follows: Figure 24E The octagon and other polygons shown.

[0222] Figure 25A This diagram illustrates an example of a spectacle-type device that includes a display device and optical equipment according to one aspect of the present invention. Here, the combination of the display device 20 and the optical equipment 21 is shown as a display unit 60 and is indicated by dashed lines. Figure 25C This is a diagram illustrating the constituent elements of the display unit 60.

[0223] The user's eyes can see the image displayed on the display device 20 by approaching the optical device 21 located near the display surface of the display device 20. The user sees the image with a widened viewing angle through the optical device 21, thereby gaining a sense of immersion and realism.

[0224] The linear polarizer 62 and the phase retardation plate 63 can be attached to the display surface of the display device 20. The optical device 21 may include, for example, a semi-reflective mirror 64, a lens 65, a phase retardation plate 66, a reflective polarizer 67, and a lens 68.

[0225] The optical device 21 converts the light emitted by the display device 20 into linearly polarized or circularly polarized light, and selective reflection and transmission can be achieved using elements arranged in the optical path. This allows for ensuring the optical path length within a limited space and shortens the focal distance of the optical device. This optical system is called a reflective-refractive optical system. Additionally, due to its thin shape, it is sometimes called a pancake lens.

[0226] Two sets of display units 60 are mounted in the frame 30 with the surface of the lens 68 exposed on the inside. One display unit 60 is a right-eye display unit, and the other display unit 60 is a left-eye display unit. By displaying images corresponding to parallax using each display unit 60, the user can perceive the stereoscopic effect of the image.

[0227] Alternatively, the housing 30 or the retaining tool 35 may also be provided with input terminals and output terminals. Cables supplying image signals from image output devices or power for charging batteries can be connected to the input terminals. The output terminals may be used, for example, as audio output terminals, and can be connected to headphones or headsets. However, if audio data can be output wirelessly or if audio is output from an external image output device, this audio output terminal may not be required.

[0228] Additionally, the frame 30 or the holding tool 35 may also house a wireless communication module and a storage module. Content can be downloaded and stored wirelessly via the wireless communication module. This allows users to watch downloaded content offline at any time.

[0229] In addition, such as Figure 25B As shown, a gaze detection sensor 41 can also be installed inside the frame 30. The gaze detection sensor 41 detects the gaze position by reading changes in reflected light caused by iris movement, using light emitted from a light source 42 installed inside the frame 30. Near-infrared light with extremely low visual sensitivity is preferably used as the light source 42. For example, operation buttons such as power on, power off, sleep, volume adjustment, channel change, menu display, selection, confirmation, and return, as well as operation buttons such as video play, stop, pause, fast forward, and rewind, can be displayed to the user so that they can perform various operations. Additionally, the user's fatigue level can be detected by factors such as blink count, and an alarm can be displayed accordingly.

[0230] By using a display device according to one aspect of the present invention in an eyeglass-type device, an electronic device with low power consumption and high reliability can be realized.

[0231] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0232] (Implementation Method 2)

[0233] In this embodiment, an example of the structure of a display panel of a display device that can be used in one aspect of the present invention is described.

[0234] The display panel in this embodiment is a high-definition display panel, which is particularly suitable for display sections of wearable devices that can be worn on the head, such as head-mounted displays for VR and glasses-type AR devices.

[0235] [Display Module]

[0236] Figure 26A A perspective view of display module 280 is shown. Display module 280 includes display panel 200A and FPC 290. Note that the display panel included in display module 280 is not limited to display panel 200A, but may be any of display panels 200B to 200G, which will be described later.

[0237] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display section 281. The display section 281 is an area for displaying images.

[0238] Figure 26B A perspective view of one side of the structure of substrate 291 is shown. A circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291. Furthermore, a terminal section 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 is connected to the circuit section 282 via a wiring section 286 composed of multiple wirings.

[0239] The pixel unit 284 includes a plurality of pixels 284a arranged periodically. Figure 26B The right side shows an enlarged view of pixel 284a. Pixel 284a includes a light-emitting element 110R that emits red light, a light-emitting element 110G that emits green light, and a light-emitting element 110B that emits blue light.

[0240] The pixel circuit section 283 includes a plurality of pixel circuits 283a arranged periodically. One pixel circuit 283a controls the light emission of three light-emitting devices included in one pixel 284a. One pixel circuit 283a may include three circuits controlling the light emission of one light-emitting device. For example, the pixel circuit 283a may have a structure that includes at least one selection transistor, one current control transistor (driving transistor), and a capacitor element for each light-emitting device. In this case, the gate of the selection transistor is input with a gate signal, and the source is input with a source signal. Thus, an active matrix display panel can be realized.

[0241] The circuit section 282 includes circuitry for driving each pixel circuit 283a of the pixel circuit section 283. For example, it preferably includes one or both of a gate line driving circuit and a source line driving circuit. Furthermore, it may include at least one of an arithmetic circuit, a storage circuit, and a power supply circuit. Additionally, transistors disposed in the circuit section 282 may also constitute part of the pixel circuit 283a. That is, the pixel circuit 283a may be constituted by transistors included in the pixel circuit section 283 and transistors included in the circuit section 282.

[0242] The FPC290 is used for wiring to supply video signals or power potentials, etc., from the outside to the circuit section 282. Additionally, ICs can be mounted on the FPC290.

[0243] The display module 280 can have a structure in which one or both of the pixel circuit section 283 and circuit section 282 are stacked on the lower side of the pixel section 284, so that the display section 281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and less than 95%, more preferably 60% or more and less than 95%. In addition, the pixels 284a can be arranged in an extremely high density, thereby enabling the display section 281 to have an extremely high pixel density. For example, the display section 281 preferably has pixels 284a arranged in a pixel density of 2000 ppi or more, more preferably 3000 ppi or more, further preferably 5000 ppi or more, and even more preferably 6000 ppi or more and less than 20000 ppi or less or less than 30000 ppi.

[0244] This display module 280 is extremely clear, making it suitable for VR-oriented devices such as head-mounted displays or AR-oriented glasses. For example, because the display module 280 has a highly sharp display section 281, even when the display section is magnified through a lens, the user cannot see any pixels, thus achieving a highly immersive display. Furthermore, the display module 280 can also be applied to electronic devices with relatively small display sections. For example, it is suitable for display sections in wearable electronic devices such as watches.

[0245] [Display Panel 200A]

[0246] Figure 27 The display panel 200A shown includes a substrate 301, light-emitting elements 110R, 110G, 110B, a capacitor 240, and a transistor 310.

[0247] Substrate 301 is equivalent to Figure 26A and Figure 26B Substrate 291 in the middle.

[0248] Transistor 310 is a transistor having a channel formation region in substrate 301. Substrate 301 can be, for example, a semiconductor substrate such as a single-crystal silicon substrate. Transistor 310 includes a portion of substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. Conductive layer 311 serves as the gate electrode. Insulating layer 313 is located between substrate 301 and conductive layer 311 and serves as the gate insulating layer. Low-resistance region 312 is a region in substrate 301 doped with impurities and serves as one of the source and drain electrodes. Insulating layer 314 covers the sides of conductive layer 311.

[0249] In addition, a component separation layer 315 is provided between two adjacent transistors 310 in a manner embedded in the substrate 301.

[0250] In addition, an insulating layer 261 is provided to cover the transistor 310, and a capacitor 240 is provided on the insulating layer 261.

[0251] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 serves as one electrode of the capacitor 240, the conductive layer 245 serves as the other electrode of the capacitor 240, and the insulating layer 243 serves as the dielectric of the capacitor 240.

[0252] A conductive layer 241 is disposed on an insulating layer 261 and embedded in an insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain terminals of the transistor 310 via a connector 271 embedded in the insulating layer 261. An insulating layer 243 is disposed covering the conductive layer 241. A conductive layer 245 is disposed in the region where it overlaps with the conductive layer 241, separated by the insulating layer 243.

[0253] The cover capacitor 240 is provided with an insulating layer 255a, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b.

[0254] Inorganic insulating films can be appropriately used for insulating layers 255a, 255b, and 255c. For example, it is preferable to use silicon oxide films as insulating layers 255a and 255c, and silicon nitride films as insulating layer 255b. Thus, insulating layer 255b can be used as an etching protective film. Although an example is shown in this embodiment where a portion of insulating layer 255c is etched to form a recess, it is also possible not to form a recess in insulating layer 255c.

[0255] Light-emitting elements 110G and 110B are disposed on the insulating layer 255c. The structure of light-emitting elements 110G and 110B can be referred to Embodiment 1.

[0256] The display panel 200A forms light-emitting elements for each light-emitting color separately, resulting in minimal chromaticity variation between low-brightness and high-brightness emission. Furthermore, the organic layers 112G and 112B are separated from each other, thus suppressing crosstalk between adjacent sub-pixels even when using a high-definition display panel. Therefore, a high-definition display panel with high display quality can be achieved.

[0257] An insulating layer 125 and a resin layer 126 are provided in the area between adjacent light-emitting elements.

[0258] The pixel electrodes 111G and 111B of the light-emitting element are electrically connected to one of the source and drain electrodes of the transistor 310 via a plug 256 embedded in insulating layers 255a, 255b, and 255c, a conductive layer 241 embedded in insulating layer 254, and a plug 271 embedded in insulating layer 261. The height of the top surface of insulating layer 255c is the same as or approximately the same as the height of the top surface of plug 256. Various conductive materials can be used as plugs.

[0259] In addition, a protective layer 121 is provided on the light-emitting elements 110G and 110B. A substrate 163 is attached to the protective layer 121 by an insulating layer 104 used as an adhesive layer.

[0260] No insulating layer covering the top end of the pixel electrode 111 is provided between two adjacent pixel electrodes 111. Therefore, the spacing between adjacent light-emitting elements can be very small. Thus, a high-definition or high-resolution display panel can be realized.

[0261] [Display Panel 200B]

[0262] Figure 28 The display panel 200B shown has a structure in which transistors 310A and 310B, respectively forming channels in a semiconductor substrate, are stacked. Note that in the following description of the display panel, parts that are the same as those described previously are sometimes omitted.

[0263] The display panel 200B has the following structure: a substrate 301B on which transistors 310B, capacitors 240 and light-emitting devices are bonded together, and a substrate 301A on which transistors 310A are disposed.

[0264] Here, an insulating layer 345 is disposed on the bottom surface of substrate 301B, and an insulating layer 346 is disposed on the insulating layer 261 disposed on substrate 301A. Insulating layers 345 and 346 are insulating layers used as protective layers, which can suppress the diffusion of impurities to substrates 301B and 301A. As insulating layers 345 and 346, inorganic insulating films that can be used for protective layer 121 can be used.

[0265] A plug 343 is provided in the substrate 301B, passing through the substrate 301B and the insulating layer 345. Here, it is preferable that an insulating layer 344, serving as a protective layer, is provided on the side covering the plug 343.

[0266] Furthermore, a conductive layer 342 is disposed on the underside of the insulating layer 345 in the substrate 301B. The conductive layer 342 is embedded in the insulating layer 335, and the bottom surfaces of the conductive layer 342 and the insulating layer 335 are planarized. In addition, the conductive layer 342 is electrically connected to the plug 343.

[0267] On the other hand, a conductive layer 341 is provided on the insulating layer 346 of the substrate 301A. The conductive layer 341 is embedded in the insulating layer 336, and the top surfaces of the conductive layer 341 and the insulating layer 336 are planarized.

[0268] The same conductive material is preferably used for both conductive layers 341 and 342. For example, a metal film containing elements selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) containing the aforementioned elements can be used. Copper is particularly preferred for both conductive layers 341 and 342. This allows for the use of Cu-Cu (copper-copper) direct bonding technology (a technology that enables electrical conduction by connecting Cu (copper) pads to each other).

[0269] [Display Panel 200C]

[0270] Figure 29 The display panel 200C shown has a structure in which conductive layers 341 and 342 are joined by bumps 347.

[0271] like Figure 29 As shown, by providing a bump 347 between conductive layer 341 and conductive layer 342, conductive layer 341 and conductive layer 342 can be electrically connected. The bump 347 can be formed, for example, using a conductive material containing gold (Au), nickel (Ni), indium (In), tin (Sn), etc. Furthermore, solder is sometimes used as the bump 347. Additionally, an adhesive layer 348 can be provided between insulating layer 345 and insulating layer 346. Furthermore, when providing the bump 347, insulating layers 335 and 336 may not be provided.

[0272] [Display Panel 200D]

[0273] Figure 30 The main difference between the display panel 200D and the display panel 200A is the structure of the transistors.

[0274] Transistor 320 is a transistor (OS transistor) that uses metal oxide (also known as oxide semiconductor) in the semiconductor layer that forms the channel.

[0275] Transistor 320 includes a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0276] Substrate 331 is equivalent to Figure 26A and Figure 26B Substrate 291 in the middle.

[0277] An insulating layer 332 is disposed on the substrate 331. The insulating layer 332 serves as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from escaping from the semiconductor layer 321 towards the insulating layer 332. As the insulating layer 332, for example, a film that is less susceptible to hydrogen or oxygen diffusion than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.

[0278] A conductive layer 327 is disposed on the insulating layer 332, and an insulating layer 326 is disposed to cover the conductive layer 327. The conductive layer 327 serves as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 serves as a first gate insulating layer. The portion of the insulating layer 326 that contacts the semiconductor layer 321 is preferably an oxide insulating film such as silicon oxide. The top surface of the insulating layer 326 is preferably planarized.

[0279] A semiconductor layer 321 is disposed on an insulating layer 326. The semiconductor layer 321 preferably contains a metal oxide (also known as an oxide semiconductor) film exhibiting semiconductor properties. A pair of conductive layers 325 are in contact with the semiconductor layer 321 and serve as source and drain electrodes.

[0280] An insulating layer 328 is provided to cover the top and side surfaces of a pair of conductive layers 325 and the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 serves as a barrier layer to prevent impurities such as water or hydrogen from diffusing from the insulating layer 264 to the semiconductor layer 321 and to prevent oxygen from detaching from the semiconductor layer 321. The same insulating film as the insulating layer 332 described above can be used as the insulating layer 328.

[0281] An opening is provided in insulating layer 328 and insulating layer 264 to reach semiconductor layer 321. An insulating layer 323 and a conductive layer 324, which are in contact with the top surface of semiconductor layer 321, are embedded inside the opening. The conductive layer 324 is used as a second gate electrode, and the insulating layer 323 is used as a second gate insulating layer.

[0282] The top surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are all the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0283] Insulating layers 264 and 265 are used as interlayer insulating layers. Insulating layer 329 is used as a barrier layer to prevent impurities such as water or hydrogen from diffusing from insulating layer 265 to transistor 320. Insulating layer 329 can use the same insulating film as insulating layers 328 and 332 described above.

[0284] A plug 274, electrically connected to one of the pair of conductive layers 325, is embedded in insulating layers 265, 329, and 264. Preferably, the plug 274 has a conductive layer 274a covering the side surfaces of the openings of each of the insulating layers 265, 329, 264, and 328, and a portion of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, a conductive material that does not readily diffuse hydrogen and oxygen is preferably used as the conductive layer 274a.

[0285] There are no particular limitations on the structure of the transistors included in the display panel of this embodiment. For example, planar transistors, interleaved transistors, or anti-interleaved transistors can be used. In addition, top-gate or bottom-gate transistor structures can also be used. Alternatively, gates can be provided above and below the semiconductor layer forming the channel.

[0286] Transistor 320 employs a structure in which a semiconductor layer forming a channel is sandwiched between two gates. Alternatively, the two gates can be connected, and the transistor can be driven by supplying the same signal to both gates. Alternatively, the threshold voltage of the transistor can be controlled by applying a potential to one of the two gates to control the threshold voltage and applying a potential to the other to drive it.

[0287] There are no particular restrictions on the crystallinity of the semiconductor material used in the semiconductor layer of the transistor; amorphous semiconductors, single-crystal semiconductors, or crystalline semiconductors other than single-crystal semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors with crystalline regions in a portion thereof) can be used. When using single-crystal semiconductors or crystalline semiconductors, the degradation of transistor characteristics can be suppressed, so they are preferred.

[0288] The bandgap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. By using a metal oxide with a wider bandgap, the off-state current of the OS transistor can be reduced.

[0289] The metal oxide preferably contains at least indium or zinc, and more preferably contains both indium and zinc. For example, the metal oxide preferably contains indium, M (M is selected from one or more of gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium and cobalt) and zinc.

[0290] Alternatively, the semiconductor layer of a transistor can also contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polycrystalline silicon, monocrystalline silicon, etc.).

[0291] Examples of metal oxides suitable for use in semiconductor layers include indium oxide, gallium oxide, and zinc oxide. Furthermore, the metal oxide preferably comprises two or three elements selected from indium, element M, and zinc. Element M is selected from one or more of gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. In particular, element M is preferably selected from one or more of aluminum, gallium, yttrium, and tin.

[0292] Note that when using metal oxides as semiconductor layers, the metal oxides are preferably formed using sputtering or ALD (Alternating Current Deposition). Sputtering increases productivity and film density, while ALD improves film coverage.

[0293] In particular, as the metal oxide used for the semiconductor layer, an oxide containing indium, gallium, and zinc (also denoted as IGZO) is preferred. Alternatively, an oxide containing indium, tin, and zinc (also denoted as ITZO (registered trademark)) is preferred. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferred. Alternatively, an oxide containing indium, aluminum, and zinc (also denoted as IAZO) is preferred. Alternatively, an oxide containing indium, aluminum, gallium, and zinc (also denoted as IAGZO) is preferred.

[0294] When the metal oxide used for the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably greater than or equal to the atomic ratio of M. Examples of such atomic ratios of the metal elements in the In-M-Zn oxide include: In:M:Zn = 1:1:1 or similar; In:M:Zn = 1:1:1.2 or similar; In:M:Zn = 1:3:2 or similar; In:M:Zn = 1:3:4 or similar; In:M:Zn = 2:1:3 or similar; In:M:Zn = 3:1:2 or similar; In:M: Compositions with Zn = 4:2:3 or similar, In:M:Zn = 4:2:4.1 or similar, In:M:Zn = 5:1:3 or similar, In:M:Zn = 5:1:6 or similar, In:M:Zn = 5:1:7 or similar, In:M:Zn = 5:1:8 or similar, In:M:Zn = 6:1:6 or similar, In:M:Zn = 5:2:5 or similar. Note that "simultaneous" composition includes a range of ±30% of the desired atomic number ratio.

[0295] Gallium or tin is preferably used as element M. Furthermore, multiple of the above elements can be combined as element M. Additionally, In:M:Zn = 40:1:10 and nearby metal oxides are preferably used as the semiconductor layer. Specifically, In:Sn:Zn = 40:1:10 and nearby metal oxides can be suitably used.

[0296] For example, when the atomic number ratio is described as In:Ga:Zn = 4:2:3 or similar, the following cases are included: when In is 4, Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. Furthermore, when the atomic number ratio is described as In:Ga:Zn = 5:1:6 or similar, the following cases are included: when In is 5, Ga is greater than 0.1 and 2 or less, and Zn is 5 or more and 7 or less. Moreover, when the atomic number ratio is described as In:Ga:Zn = 1:1:1 or similar, the following cases are included: when In is 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0297] The semiconductor layer may also comprise two or more metal oxide layers with different compositions. For example, a stacked structure may be suitable, consisting of a first metal oxide layer with an In:M:Zn ratio of 1:3:4 or similar, and a second metal oxide layer disposed on the first metal oxide layer with an In:M:Zn ratio of 1:1:1 or similar. Furthermore, gallium or aluminum is particularly preferred as element M.

[0298] Alternatively, for example, a stacked structure selected from any one of indium oxide, indium gallium oxide and IGZO and any one of IAZO, IAGZO and ITZO (registered trademark) may also be used.

[0299] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0300] Compared to transistors using amorphous silicon, OS transistors have a very high field-effect mobility. Furthermore, the source-drain leakage current (also known as off-state current) of an OS transistor in the off state is extremely low, allowing it to retain the charge stored in the capacitor connected in series with the transistor for extended periods. Additionally, using OS transistors can reduce the power consumption of display panels.

[0301] Furthermore, to increase the luminous brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the current flowing through the light-emitting device. For this purpose, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Because the source-drain breakdown voltage of an OS transistor is higher than that of a Si transistor, a higher voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, the current flowing through the light-emitting device can be increased, thereby improving the luminous brightness of the light-emitting device.

[0302] Furthermore, when the transistor operates in the saturation region, the source-drain current change of an OS transistor with respect to changes in the gate-source voltage is much smaller compared to a Si transistor. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, the current flowing through the source-drain can be determined in detail based on the change in the gate-source voltage, thus controlling the amount of current flowing through the light-emitting device. This allows for an increase in the grayscale value of the pixel circuit.

[0303] Furthermore, regarding the saturation characteristics of the current flowing through a transistor when operating in the saturation region, compared to a Si transistor, an OS transistor can maintain a stable current (saturation current) even when the source-drain voltage is gradually increased. Therefore, by using an OS transistor as a driving transistor, a stable current can flow through the light-emitting device even if the current-voltage characteristics of, for example, EL devices become non-uniform. In other words, when an OS transistor operates in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the brightness of the light-emitting device.

[0304] As described above, by using OS transistors as driving transistors included in pixel circuits, it is possible to achieve "reduction in power consumption", "increase in luminous brightness", "multi-grayscale conversion", and "suppression of non-uniformity of light-emitting devices".

[0305] [Display Panel 200F]

[0306] exist Figure 31 The display panel 200F shown has transistors 310 with channels formed on substrate 301 and transistors 320 with metal oxide semiconductor layers forming the channels stacked on it.

[0307] An insulating layer 261 is provided to cover transistor 310, and a conductive layer 251 is provided on the insulating layer 261. Furthermore, an insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. Both conductive layers 251 and 252 are used for wiring. Additionally, insulating layers 263 and 332 are provided to cover the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. Furthermore, an insulating layer 265 is provided to cover transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 is electrically connected to the transistor 320 via a connector 274.

[0308] Transistor 320 can be used as a transistor constituting a pixel circuit. Furthermore, transistor 310 can be used as a transistor constituting a pixel circuit or as a transistor constituting a driving circuit (gate line driving circuit, source line driving circuit) used to drive the pixel circuit. Additionally, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0309] With this structure, not only pixel circuits but also driving circuits can be formed directly under the light-emitting device. Therefore, compared with setting the driving circuits around the display area, the display panel can be miniaturized.

[0310] [Display Panel 200G]

[0311] Figure 32 The display panel 200G shown uses transistor 320A (vertical transistor) instead of Figure 31 The structure of transistor 320 in the display panel 200F is shown. Alternatively, a structure using transistor 320A instead of transistor 320 can also be used. Figure 30 The display panel shown is 200D.

[0312] Figure 33A This is a cross-sectional view of the XZ plane of transistor 320A. Furthermore, Figure 33B It is a cross-sectional view of the XY plane including the wiring 440.

[0313] Transistor 320A includes an oxide semiconductor 470, an insulator 430, and a conductor 420. The oxide semiconductor 470 serves as a semiconductor layer, the insulator 430 serves as a gate insulator, and the conductor 420 serves as a gate electrode. Furthermore, wiring 450 has a region serving as one of the source and drain electrodes of transistor 320A. Additionally, wiring 440 has a region serving as the other of the source and drain electrodes of transistor 320A.

[0314] An opening 490 is provided to reach the wiring 450 through the wiring 440 and the insulator 480. The top surface of the opening 490 is a nearly circular cylindrical shape. By adopting this structure, miniaturization or high integration of the memory cells can be achieved. Note that the side surface of the opening 490 is preferably perpendicular to the top surface of the wiring 450.

[0315] At least a portion of the oxide semiconductor 470 is disposed in the opening 490. The oxide semiconductor 470 has a region in the opening 490 that contacts the top surface of the wiring 450, a region that contacts the side surface of the wiring 440, and a region that contacts the side surface of the insulator 480.

[0316] The insulator 430 is configured such that at least a portion of it covers the opening 490. The conductor 420 is configured such that at least a portion of it is located in the opening 490. Note that the conductor 420 is preferably disposed in a manner that is embedded in the opening 490, and to improve integration, its shape when viewed from above is preferably approximately circular.

[0317] like Figure 33A As shown, the oxide semiconductor 470 has region 470i, region 470na and region 470nb disposed in a manner that sandwiches region 470i.

[0318] Region 470na is a region in the oxide semiconductor 470 that contacts wiring 450. At least a portion of region 470na is used as one of the source and drain regions of transistor 320A. Region 470nb is a region in the oxide semiconductor 470 that contacts wiring 440. At least a portion of region 470nb is used as the other of the source and drain regions of transistor 320A. Figure 33B As shown, wiring 440 contacts the entire outer periphery of oxide semiconductor 470. Therefore, the other of the source and drain regions of transistor 320A may be formed on the entire outer periphery of the portion of oxide semiconductor 470 formed in the same layer as wiring 440.

[0319] Region 470i is the region between regions 470na and 470nb in the oxide semiconductor 470. At least a portion of region 470i is used as the channel formation region of transistor 320A. That is, the channel formation region of transistor 320A is formed in a portion of the oxide semiconductor 470 located between wiring 450 and wiring 440. Alternatively, it can be said that the channel formation region of transistor 320A is located in or near the region of oxide semiconductor 470 that contacts insulator 480.

[0320] The channel length of transistor 320A is the distance between the source and drain regions. In other words, the channel length of transistor 320A can be said to be determined by the thickness of the insulator 480 on the wiring 450. Figure 33A In the diagram, the channel length L of transistor 320A is indicated by a dashed double arrow. In cross-section, the channel length L is the distance between the end of the region where the oxide semiconductor 470 and the wiring 450 contact each other and the end of the region where the oxide semiconductor 470 and the wiring 440 contact each other. That is, the channel length L is equivalent to the length of the side surface of the insulator 480 on the opening 490 side in cross-section.

[0321] In planar transistors, the channel length is limited by the exposure limit of photolithography, making further miniaturization difficult. However, in one aspect of the present invention, the channel length can be set according to the thickness of the insulator 480. Therefore, the channel length of transistor 320A can be set to a very fine structure below the exposure limit of photolithography (e.g., below 60 nm, below 50 nm, below 40 nm, below 30 nm, below 20 nm, or below 10 nm and above 1 nm or above 5 nm). This increases the on-state current of transistor 320A.

[0322] Furthermore, as described above, a channel forming region, a source region, and a drain region can be formed in the opening 490. Therefore, compared to existing transistors that have the channel forming region, source region, and drain region respectively located on the XY plane, the occupied area of ​​transistor 320A can be reduced. This, in turn, can increase pixel density.

[0323] Thus, a transistor with a channel forming region along the side of the insulator 480 in the opening 490 is also called a longitudinal transistor.

[0324] Additionally, on the XY plane of the channel formation region including the oxide semiconductor 470, and... Figure 33B Similarly, the oxide semiconductor 470, insulator 430, and conductor 420 are arranged in a concentric circle. Therefore, the side of the conductor 420 located at the center faces the side of the oxide semiconductor 470 across the insulator 430. In other words, the entire outer periphery of the oxide semiconductor 470 forms the channel formation region when viewed from above. At this time, for example, the channel width of the transistor 320A is determined by the length of the outer periphery of the oxide semiconductor 470. That is to say, the channel width of the transistor 320A can be said to be determined by the size of the maximum width of the opening 490 (the maximum diameter if the opening 490 is circular when viewed from above). Figure 33A and Figure 33B In the diagram, a double-headed arrow with a double-dotted line represents the maximum width D of the opening at 490 degrees. Figure 33BIn the diagram, the channel width W of transistor 320A is represented by a double-headed dotted arrow. By increasing the maximum width D of the opening 490, the channel width per unit area can be increased, thereby increasing the on-state current.

[0325] When the opening 490 is formed using photolithography, the maximum width D of the opening 490 is limited by the exposure limit of the photolithography method. Furthermore, the maximum width D of the opening 490 is determined based on the thicknesses of the oxide semiconductor 470, insulator 430, and conductor 420 disposed in the opening 490. The maximum width D of the opening 490 is preferably, for example, 5 nm or more, 10 nm or more, or 20 nm or more and less than 100 nm, 60 nm or less, 50 nm or less, 40 nm or less, or 30 nm or less. Note that when the shape of the opening 490 in top view is circular, the maximum width D of the opening 490 is equivalent to the diameter of the opening 490, and the channel width W can be calculated as "D×π".

[0326] Furthermore, in one embodiment of the memory device of the present invention, the channel length L of transistor 320A is preferably at least smaller than the channel width W of transistor 320A. In one embodiment of the present invention, the channel length L of transistor 320A is at least 0.1 times and less than 0.99 times the channel width W of transistor 320A, preferably at least 0.5 times and less than 0.8 times. By employing this structure, transistors with good electrical characteristics and high reliability can be realized.

[0327] Furthermore, by forming the opening 490 in a nearly circular manner when viewed from above, the oxide semiconductor 470, insulator 430, and conductor 420 are arranged in a concentric circle. As a result, the distance between the conductor 420 and the oxide semiconductor 470 is approximately uniform, so a gate electric field can be applied to the oxide semiconductor 470 in a substantially uniform manner.

[0328] In the channel formation region of a transistor using oxide semiconductors as the semiconductor layer, it is preferable to have fewer oxygen vacancies or lower concentrations of impurities such as hydrogen, nitrogen, and metal elements compared to the source and drain regions. For example, the aluminum concentration in the channel formation region of the oxide semiconductor is preferably 1 × 10⁻⁶. 22 atoms / cm 3 Hereinafter, 1×10 is more preferred. 21 atoms / cm 3 Hereinafter, 1×10 is more preferred. 20 atoms / cm 3 The following is more preferably 5×10 19 atoms / cm 3 Hereinafter, 1×10 is more preferred. 19 atoms / cm 3 The following is more preferably 5×1018 atoms / cm 3 Hereinafter, 1×10 is more preferred. 18 atoms / cm 3 the following.

[0329] In addition, hydrogen near oxygen vacancies sometimes forms defects where hydrogen enters the oxygen vacancy (hereinafter sometimes referred to as V). O H) generates electrons that become charge carriers, so V is generated in the channel formation region. O H is also preferably reduced. Thus, the channel formation region of the transistor is a high-resistivity region with low carrier concentration. Therefore, the channel formation region of the transistor can be described as i-type (intrinsic) or substantially i-type.

[0330] Furthermore, the source and drain regions of transistors using oxide semiconductors as semiconductor layers are as follows: Due to the higher number of oxygen vacancies compared to the channel formation region, V... O High concentrations of impurities such as hydrogen, nitrogen, and metals increase carrier concentration, resulting in lower resistance. In other words, compared to the channel region, the source and drain regions of a transistor are n-type regions with higher carrier concentration and lower resistance.

[0331] Note that in Figure 33A In some embodiments, the opening 490 is provided such that the side of the opening 490 is perpendicular to the top surface of the wiring 450, but the present invention is not limited thereto. For example, the side of the opening 490 may also be tapered.

[0332] At least a portion of this embodiment can be implemented in combination with other embodiments and examples described in this specification.

[0333] [Symbol Explanation]

[0334] 20: Display device; 21: Optical equipment; 30: Frame; 35: Holding tool; 40: Pixel; 41: Eye-tracking sensor; 42: Light source; 60: Display unit; 62: Linear polarizer; 63: Phase retardation plate; 64: Semi-reflective mirror; 65: Lens; 66: Phase retardation plate; 67: Reflective polarizer; 68: Lens; 71: Sub-pixel; 74: Pixel array; 75: Circuit; 76: Circuit; 77: Layer; 78: Layer; 79: Layer; 100: Stack; 101: Pixel; 102: Lens; 102a: Resin layer; 102B: Lens; 102b: Resin layer; 102c: Resin layer; 102G: Lens; 102R: Lens; 102S: Lens; 103: Insulating layer; 104 105B: Insulating layer; 105G: Subpixel; 105R: Subpixel; 105S: Subpixel; 110: Light-emitting element; 110B: Light-emitting element; 110G: Light-emitting element; 110R: Light-emitting element; 111: Pixel electrode; 111B: Pixel electrode; 111G: Pixel electrode; 112: Organic layer; 112B: Organic layer; 112G: Organic layer; 113: Common electrode; 114: Common layer; 121: Protective layer; 124: Insulating layer; 125: Insulating layer; 126: Resin layer; 145: Photomask; 161: Substrate; 163: Substrate; 200A: Display panel; 200B: Display panel; 200C: Display panel; 200D: Display panel; 200 F: Display panel; 200G: Display panel; 240: Capacitor; 241: Conductive layer; 243: Insulating layer; 245: Conductive layer; 251: Conductive layer; 252: Conductive layer; 254: Insulating layer; 255a: Insulating layer; 255b: Insulating layer; 255c: Insulating layer; 256: Plug; 261: Insulating layer; 262: Insulating layer; 263: Insulating layer; 264: Insulating layer; 265: Insulating layer; 271: Plug; 274: Plug; 274a: Conductive layer; 274b: Conductive layer; 280: Display module; 281: Display section; 282: Circuit section; 283: Pixel circuit section; 283a: Pixel circuit; 284: Pixel section; 284a: Pixel; 285: Terminal section; 28 6: Wiring section; 290: FPC; 291: Substrate; 292: Substrate; 301: Substrate; 301A: Substrate; 301B: Substrate; 310: Transistor; 310A: Transistor; 310B: Transistor; 311: Conductive layer; 312: Low resistance region; 313: Insulating layer; 314: Insulating layer; 315: Component separation layer; 320: Transistor; 320A: Transistor; 321: Semiconductor layer; 323: Insulating layer; 324: Conductive layer; 325: Conductive layer; 326: Insulating layer; 327: Conductive layer; 328: Insulating layer; 329: Insulating layer; 331: Substrate; 332: Insulating layer; 335: Insulating layer; 336: Insulating layer; 341: Conductive layer; 342: Conductive layer.343: Plug; 344: Insulating layer; 345: Insulating layer; 346: Insulating layer; 347: Bump; 348: Adhesive layer; 420: Conductor; 430: Insulator; 440: Wiring; 450: Wiring; 470: Oxide semiconductor; 470i: Area; 470na: Area; 470nb: Area; 480: Insulator; 490: Opening.

Claims

1. A display device comprising, in pixels: A first light-emitting element, a second light-emitting element, and a third light-emitting element, each emitting a different color. In this embodiment, a first plano-convex lens is disposed on the first light-emitting element through an insulating layer. A second plano-convex lens is disposed on the second light-emitting element through the insulating layer. A third plano-convex lens is disposed on the third light-emitting element, separated by the insulating layer. The first and second plano-convex lenses are circular in shape with radius r when viewed from above. The third plano-convex lens, when viewed from above, has an elongated oval shape with curvature at both ends equal to the radius r of the circle. The heights of the first to third plano-convex lenses are in the range of 0.25r or more and r or less. The thickness of the insulating layer is in the range of 1 μm or more and 4 μm or less. Furthermore, when the angle of the axis perpendicular to the display surface of the display device is 0°, the white display within the range of -30° to +30° satisfies Δu'v'=0.02 or less.

2. The display device according to claim 1, The pixels are set in a manner that is above 2000ppi and below 10000ppi.

3. The display device according to claim 1, The insulating layer contains the same material as the first to third plano-convex lenses.

4. The display device according to claim 1, The refractive index of the insulating layer is greater than that of the first to third plano-convex lenses.

5. The display device according to claim 1, The height of the first or second plano-convex lens is different from the height of the third plano-convex lens.

6. The display device according to claim 1, The first to third plano-convex lenses are joined together.

7. The display device according to claim 1, One of the first and second light-emitting elements emits red light. The first light-emitting element and the other of the second light-emitting elements emit green light. Furthermore, the third light-emitting element emits blue light.

8. The display device according to claim 1, The first and second light-emitting elements are approximately square in shape when viewed from above. Furthermore, the third light-emitting element has an approximately rectangular shape when viewed from above.

9. An electronic device, The display device described in any one of claims 1 to 8 is used as the light source, and a reflective and refractive optical system is provided on one side of the display surface of the display device.

Images