Radioactive batteries and power devices

Abstract

This application can provide a radioactive battery comprising: a plurality of radioactive cell elements, each including an electrode having a first electrode and a second electrode; a radioactive source disposed between the first electrode and the second electrode; and an energy conversion layer disposed between the first electrode and the second electrode and not overlapping with the radioactive source when viewed in a first direction perpendicular to the upper surface of the electrode; and a connector disposed in at least a portion of the gaps between any adjacent radioactive cell elements to electrically connect the electrodes of the adjacent radioactive cell elements to each other.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0129039, filed on September 24, 2024, and Korean Patent Application No. 10-2025-0137432, filed on September 23, 2025, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] Exemplary embodiments relate to a radioactive battery and an electrical device comprising the radioactive battery. Background Technology

[0004] A radioactive isotope is an element that decays into a stable isotope while emitting radiation. Alpha decay, beta decay, and gamma decay are the known decay modes of radioactive isotopes. In other words, depending on the type of radioactive isotope, it emits alpha, beta, or gamma rays. Simultaneously, the time required for the radioactive content of a radioactive isotope to decrease to half of its initial amount during decay is called its half-life. The type of radiation emitted during decay and the half-life can be determined by the specific type of radioactive isotope.

[0005] A radioactive cell or isotope cell (or radioactive battery or isotope battery) is a battery that converts the nuclear fission energy of a decaying radioactive isotope into electrical energy for use as a power source. For example, a betavoltaic cell is a battery that utilizes beta rays emitted by a decaying radioactive isotope. These beta rays are absorbed by a PN junction semiconductor, thereby forming electron-hole pairs in the depletion region, and the resulting electrons and holes can be used as a power source. Summary of the Invention

[0006] Technical issues

[0007] One aspect provides a radioactive battery and power device that can be applied to electronic products requiring high power by generating high-density electricity.

[0008] Technical solution

[0009] According to one aspect, a radioactive battery includes: a plurality of radioactive cell elements, each comprising: an electrode including a first electrode and a second electrode; a radioactive source disposed between the first electrode and the second electrode; and an energy conversion layer disposed between the first electrode and the second electrode, wherein the energy conversion layer does not overlap with the radioactive source when viewed in a first direction perpendicular to the upper surface of the electrode; and a connector disposed in at least a portion of a gap between any adjacent radioactive cell elements in the plurality of radioactive cell elements, and electrically connecting the respective electrodes of the adjacent radioactive cell elements.

[0010] In an exemplary embodiment of a radioactive battery, the connector may include a first connector electrically connecting each first electrode of the adjacent radioactive cell and a second connector electrically connecting each second electrode of the adjacent radioactive cell.

[0011] The radioactive battery of the exemplary embodiment may further include an insulating layer disposed in at least a portion of the gaps between any adjacent radioactive cell elements in the plurality of radioactive cell elements, wherein the connector penetrates the insulating layer.

[0012] In an exemplary embodiment of a radioactive battery, in at least a portion of the plurality of radioactive cell units, the energy conversion layer may surround at least a portion of the first electrode, the radiation source may surround at least a portion of the energy conversion layer, and the second electrode may surround at least a portion of the radiation source.

[0013] In an exemplary embodiment of a radioactive battery, the energy conversion layer may comprise an N-type semiconductor and a P-type semiconductor, the N-type semiconductor surrounding at least a portion of the P-type semiconductor, and the P-type semiconductor surrounding at least a portion of the first electrode.

[0014] In an exemplary embodiment of a radioactive battery, the radioactive cell may further include a hole transport layer disposed between the first electrode and the N-type semiconductor.

[0015] In a radioactive battery of an exemplary embodiment, in at least a portion of the plurality of radioactive cell elements, the energy conversion layer may be in contact with at least a portion of the radioactive source.

[0016] In an exemplary embodiment of a radioactive battery, in at least a portion of the plurality of radioactive cell elements, the first electrode and the second electrode may include through holes extending along a first direction perpendicular to the upper surface of the electrodes, and the connector may include a region disposed in at least a portion of the through holes.

[0017] In the exemplary embodiment of the radioactive battery, at least a portion of the plurality of radioactive cell cells may further include a dielectric layer surrounding at least a portion of the first electrode.

[0018] The radioactive battery in the exemplary embodiment may also include a shielding member that houses the plurality of radioactive cell elements and the connector.

[0019] In an exemplary embodiment of a radioactive battery, in at least a portion of the plurality of radioactive cell units, the radioactive source may surround at least a portion of the first electrode, the energy conversion layer may surround at least a portion of the radioactive source, and the second electrode may surround at least a portion of the energy conversion layer.

[0020] In an exemplary embodiment of a radioactive battery, in at least a portion of the plurality of radioactive cell units, the energy conversion layer may include a first energy conversion layer and a second energy conversion layer, the radioactive source may surround at least a portion of the first energy conversion layer, and the second energy conversion layer may surround at least a portion of the radioactive source.

[0021] According to another aspect, a radioactive battery includes: a plurality of radioactive cell elements, each comprising: an electrode including a first electrode and a second electrode, an energy conversion layer disposed between the first electrode and the second electrode, and a radiation source disposed on at least one of the first electrode and the second electrode; and a connector disposed in at least a portion of the gaps between any adjacent radioactive cell elements in the plurality of radioactive cell elements, and electrically connecting the respective electrodes of the adjacent radioactive cell elements.

[0022] In an exemplary embodiment of a radioactive battery, in at least a portion of the plurality of radioactive cell elements, the radiation source may not penetrate the first electrode or the second electrode in a first direction perpendicular to the upper surface of the electrode.

[0023] In an exemplary embodiment of a radioactive battery, in at least a portion of the plurality of radioactive cell elements, the energy conversion layer may be in contact with at least a portion of the radioactive source, at least a portion of the first electrode, and at least a portion of the second electrode.

[0024] In an exemplary embodiment of a radioactive battery, in at least a portion of the plurality of radioactive cell units, the energy conversion layer may comprise an N-type semiconductor and a P-type semiconductor, the N-type semiconductor may surround at least a portion of the P-type semiconductor, the P-type semiconductor may surround at least a portion of the first electrode, and the radiation source may be disposed on the second electrode, but may not penetrate the second electrode in a first direction perpendicular to the upper surface of the electrode.

[0025] In an exemplary embodiment of a radioactive battery, in at least a portion of the plurality of radioactive cell elements, when viewed in a first direction perpendicular to the upper surface of the electrode, the radioactive source may have an extended shape extending in a direction away from the energy conversion layer.

[0026] In the exemplary embodiment of the radioactive cell, the extended shape may be one of a plurality of extended shapes, and the plurality of extended shapes may not overlap each other when viewed in the first direction.

[0027] In an exemplary embodiment of a radioactive battery, in at least a portion of the plurality of radioactive cell elements, the radioactive source may include a first radioactive source disposed on the first electrode and a second radioactive source disposed on the second electrode, and the first radioactive source and the second radioactive source may not overlap each other based on the radiation direction outward from the center of the radioactive battery.

[0028] According to another aspect, an electrical device includes a radioactive battery and a load that receives power generated by the radioactive battery via a wire. Furthermore, the radioactive battery includes: a plurality of radioactive cell elements, each comprising: an electrode including a first electrode and a second electrode; a radioactive source disposed between the first electrode and the second electrode; and an energy conversion layer disposed between the first electrode and the second electrode, wherein the energy conversion layer does not overlap with the radioactive source when viewed in a first direction perpendicular to the upper surface of the electrode; and a connector disposed in at least a portion of the gaps between any adjacent radioactive cell elements and electrically connecting the respective electrodes of the adjacent radioactive cell elements, the connector comprising a first connector electrically connecting each first electrode of the adjacent radioactive cell elements and a second connector electrically connecting each second electrode of the adjacent radioactive cell elements, the wire comprising a first wire electrically connected to the first connector and a second wire electrically connected to the second connector, and the load being configured to be electrically connected to the first wire and the second wire.

[0029] The power device in the exemplary embodiment may further include: an energy storage device that receives power generated by the radioactive battery via the conductor; and a switching device that connects the conductor to the load or the energy storage device.

[0030] Beneficial effects

[0031] According to an exemplary embodiment, a radioactive battery and power device can be provided that can be applied to electronic products requiring high power by generating high-density electricity. Attached Figure Description

[0032] Figure 1 This is a perspective view showing at least a portion of a radioactive battery according to an exemplary embodiment of the present invention.

[0033] Figure 2This is a perspective view showing a portion of an adjacent radioactive cell in a radioactive battery according to an exemplary embodiment of the present invention.

[0034] Figure 3 This is a plan view illustrating at least a portion of a radioactive cell according to an exemplary embodiment of the present invention.

[0035] Figure 4a , Figure 4b , Figure 4c , Figure 4d and Figure 4e yes Figure 3 An enlarged view of the P section, and a plan view showing the interface between the radiation source and the energy conversion layer.

[0036] Figure 5a , Figure 5b , Figure 5c , Figure 5d and Figure 5e yes Figure 3 An enlarged view of the Q portion, and a plan view showing the interface between the N-type semiconductor and the P-type semiconductor.

[0037] Figures 6 to 9 Each is a plan view illustrating at least a portion of a radioactive cell according to an exemplary embodiment of the present invention.

[0038] Figure 10 This is a perspective view showing a portion of an adjacent radioactive cell in a radioactive battery according to an exemplary embodiment of the present invention.

[0039] Figure 11 This is a plan view illustrating at least a portion of a radioactive cell according to an exemplary embodiment of the present invention.

[0040] Figure 12 This is a perspective view that partially illustrates at least a portion of a radioactive cell according to an exemplary embodiment of the present invention.

[0041] Figure 13 The structure of an electric device according to an exemplary embodiment of the present invention is illustrated schematically.

[0042] Figures 14 to 16 Each is a plan view illustrating at least a portion of a radioactive cell according to another exemplary embodiment of the present invention. Detailed Implementation

[0043] Before describing this invention, the terms or expressions used herein and in the claims should not be construed as having their ordinary or dictionary meanings. Furthermore, in accordance with the principle that inventors can best describe their disclosures, inventors may appropriately define the concepts of terms, and terms should be interpreted in a manner consistent with the technical spirit of the invention. The exemplary embodiments described in this specification and the structures shown in the accompanying drawings are merely the most exemplary embodiments of the invention and may not represent all the technical spirit of the invention. Therefore, as of the date of this filing, various equivalents and modifications may exist that can replace them.

[0044] The reference numerals or symbols described in the accompanying drawings of this specification may indicate parts or components that perform substantially the same function. For ease of description and understanding, the same reference numerals or symbols may be used in descriptions even in different exemplary embodiments. That is, even if components with the same reference numerals are shown in multiple drawings, it does not necessarily mean that all multiple drawings represent the same embodiment.

[0045] The accompanying drawings provided in this invention are based on exemplary embodiments of the invention, and the proportions of the width, length, or thickness (or height) of the components are provided for the purpose of describing the invention in detail and may differ from actual dimensions. Furthermore, in the coordinate system shown in the drawings, axes may be perpendicular to each other, arrows may indicate positive directions, and directions opposite to the arrows (directions rotated 180 degrees) may be negative directions.

[0046] In the following description, unless the context clearly indicates otherwise, the singular form is intended to include the plural form. It will be further understood that the terms “comprising” or “constituting” as used in this specification indicate the presence of the described feature, step, operation, component, part, or combination thereof, and do not exclude the presence or addition of more than one other feature, number, step, operation, component, part, or combination thereof.

[0047] Furthermore, in the following description, terms such as upper side, upper part, lower side, lower part, side, front and back are based on the orientation shown in the accompanying drawings, and they may be expressed in different ways when the orientation of the object changes.

[0048] Furthermore, terms including ordinal numbers such as "first" and "second" may be used in this specification and claims to distinguish components. Such ordinal numbers are used to differentiate identical or similar components from one another, and the meaning of the terms should not be limited by such ordinal numbers. For example, the order of use or arrangement of components combined with an ordinal number should not be limited by that number. If necessary, the ordinal numbers may be interchanged.

[0049] In the following, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the spirit of the present invention is not limited to the exemplary embodiments presented. For example, those skilled in the art who understand the spirit of the present invention may propose other exemplary embodiments falling within the scope of the present invention by adding, modifying, or removing components, and these exemplary embodiments are also considered to fall within the scope of the present invention. For clarity, the shapes and sizes of components in the drawings may be exaggerated.

[0050] Figure 1 This is a perspective view showing at least a portion of a radioactive battery 10 according to an exemplary embodiment of the present invention. Figure 2 This is a perspective view showing a portion of adjacent radioactive cell cells 100A and 100B in a radioactive battery 10 according to an exemplary embodiment of the present invention. Figure 3 This is a plan view showing at least a portion of a radioactive cell 100 according to an exemplary embodiment of the present invention.

[0051] The present invention can provide a radioactive battery 10, which can be applied to high-power electronic products by generating high-density energy. High-power electronic products can include all products, such as semiconductor memories like DRAM or NAND flash memory, processors, mobile devices, automobiles, drones, and computers.

[0052] A radioactive battery 10 according to an exemplary embodiment of the present invention may include radioactive cell 100. In one example, the radioactive battery 10 may include multiple radioactive cell 100s, and the radioactive cell 100s may be electrically connected. In one example, the radioactive battery 10 can benefit from generating high-density energy by electrically connecting multiple radioactive cell 100s.

[0053] In one exemplary embodiment of the present invention, a radioactive cell 100 may include an electrode 110. The electrode 110 may include an anode for providing electrons and a cathode for receiving electrons.

[0054] In one example, electrode 110 may include a first electrode 111 and a second electrode 112. The second electrode 112 may be the counter electrode of the first electrode 111. That is, when the first electrode 111 is the anode, the second electrode 112 may be the cathode, and when the first electrode 111 is the cathode, the second electrode 112 may be the anode. In one example, the first electrode 111 may be the cathode, and the second electrode 112 may be the anode.

[0055] In one example, the electrode 110 may include a current collector. The electrode 110 is not particularly limited in type, size, and shape as long as it has conductivity and does not undergo physical or chemical changes with other components within the radioactive battery 10. For example, the electrode 110 may be cylindrical, tetrahedral, hexahedral, or annular. Additionally, the electrode 110 may have a form with a hollow center. Further, for example, the electrode 110 may include metallic materials such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), may include transparent oxides such as fluorine (F)-doped tin oxide (FTO) or indium tin oxide (ITO, In 2-x Sn x O3, 0 < x < 2), or may include carbon-based compounds such as carbon nanotubes, graphene, or graphene oxide.

[0056] The radioactive unit cell 100 of an exemplary embodiment of the present invention may include a radiation source 120. The radiation source 120 may be disposed between the first electrode 111 and the second electrode 112.

[0057] In one example, the radiation source 120 may include a radioactive isotope. The radioactive isotope is not particularly limited as long as it decays to emit radiation. Examples of radioactive isotopes may include isotopes that emit alpha rays, and isotopes that emit alpha rays include those selected from the group consisting of americium-241 ( 241 Am), americium-243 ( 243 Am), polonium-209 ( 209 Po), polonium-210 ( 210 Po), plutonium-238 ( 238 Pu), plutonium-239 ( 239 Pu), curium-242 ( 242 Cm), curium-244 ( 244 Cm), curium-249 ( 249 Cm), promethium-147 ( 147 Pm), uranium-238 ( 238 U), thorium-232 ( 232 Th), radium-226 ( 226 Ra), bismuth-210 ( 210 Bi), neptunium-237 ( 237 Np), europium-152 ( 152 Eu), francium-223 ( 223 Fr), astatine-210 ( 210 At), protactinium-231 ( 231 Pa), einsteinium-253 ( 253 Es), californium-252 ( 252 Cf), and berkelium-249 (249 One or more from the group consisting of (Bk). In another example, radioactive isotopes may include isotopes that emit beta rays, including isotopes selected from tritium (Bk). 3 H), Calcium-45 ( 45 Ca), Nickel-63 ( 63 Ni), Copper-67 ( 67 Cu), Strontium-90 ( 90 Sr), Promethium-147 147 Pm), Osmium-194 194 OS), Thulium-171 171 Tm), Tantalum-179 ( 179 Ta), Cadmium-109 109 Cd), germanium-68( 68 Ge), Cerium-159 159 Ce) and tungsten-181 181 One or more from the group consisting of W). In another example, the radioactive isotope may include isotopes that emit gamma rays, including cobalt-60 (W). 60 Co), Cesium-137 137 Cs), Iodine-131 131I Gallium-67 ( 67 Ga) and thallium-201( 201 One or more of the following: Tl). The radioactive isotopes contained in the radioactive source (120) may include isotopes that emit alpha rays. The radioactive isotopes contained in the radioactive source (120) may include isotopes that emit beta rays. The radioactive isotopes contained in the radioactive source (120) may include one or more of the following: isotopes that emit alpha rays and isotopes that emit beta rays. The radioactive isotopes contained in the radioactive source (120) may include one or more of the following: isotopes that emit alpha rays, isotopes that emit beta rays, and isotopes that emit gamma rays.

[0058] In one instance, the radioactive source 120 can be manufactured by more than one of, for example, electroplating, electroless plating, and chemical vapor deposition (CVD), but is not limited thereto. Electroplating may be suitable, taking into account radiation shielding and worker safety.

[0059] In one example, the radioactive source 120 can be manufactured into an electroplating solution. For example, in the case of nickel-63 ( 63 When Ni is used as a radioactive source, it can be obtained by irradiating nickel-62 with neutrons. 62 Ni) to manufacture nickel-63 ( 63 Ni), then nickel-63 ( 63 Ni) chlorination to produce63 NiCl2, thus producing nickel-63 ( 63 Ni) electroplating solution. Alternatively, nickel-62 ( 62 Ni) chlorination to produce 62 NiCl2, then irradiated with neutrons to produce a product containing 63 Nickel-63 in NiCl2 ( 63 Ni) electroplating solution, but not limited to this.

[0060] In one instance, the electroplating solution may also contain additives such as pH adjusters and pH stabilizers, which can help to uniformly form the radiation source 120 by controlling the electroplating speed or growth rate.

[0061] In an exemplary embodiment of the present invention, the radioactive cell 100 may include an energy conversion layer 130 disposed between a first electrode 111 and a second electrode 112, but not overlapping with the radiation source 120 when viewed in the first direction D1. The first direction D1 is perpendicular to the upper surface 100US, which is the surface of the radioactive cell 100 in the first direction D1. Simultaneously, the upper surface 100US (the surface of the radioactive cell 100 in the first direction D1) may be disposed on the same plane as the upper surface 110US (the surface of the electrode 110 in the first direction D1). Furthermore, the lower surface 100BS (the surface opposite to the upper surface 100US of the radioactive cell 100 relative to the first direction D1) may be disposed on the same plane as the lower surface 110BS (the surface opposite to the upper surface 110US of the electrode 110).

[0062] Furthermore, the first direction D1 perpendicular to the upper surface 100US of the radioactive cell 100 is the same as the first direction D1 perpendicular to the upper surface 110US of the electrode 110. In this specification, the first direction D1 perpendicular to the upper surface 100US of the radioactive cell 100 can be used with the same meaning as the first direction D1 perpendicular to the upper surface 110US of the electrode 110. That is, the energy conversion layer 130 can be disposed between the first electrode 111 and the second electrode 112, but it may not overlap with the radiation source 120 when viewed from the first direction D1 perpendicular to the upper surface 110US of the electrode 110.

[0063] In one example, multiple radial cell 100s can be stacked in one direction. That is, the stacking direction of the multiple radial cell 100s can refer to, for example, a first direction D1. The structure formed by stacking multiple radial cell 100s is advantageous in terms of yield and scalability.

[0064] Unless specifically defined herein, the first direction D1 may refer to a direction perpendicular to the upper surface 100US of the radioactive cell 100. The second direction D2 may refer to a direction intersecting (e.g., perpendicular to) the first direction D1 and parallel to the upper surface 100US of the radioactive cell 100. The third direction D3 may intersect (e.g., perpendicular to) the first direction D1 and the second direction D2, and may refer to a direction parallel to the upper surface 100US of the radioactive cell 100.

[0065] In one example, the energy conversion layer 130 can form electron-hole pairs through radiation emitted from the radiation source 120. In another example, the energy conversion layer 130 can be an inorganic layer, an organic layer, an organic-inorganic hybrid layer, a dye-sensitized layer, or a combination thereof, and can generate electrical energy by forming electron-hole pairs through radiation.

[0066] In one instance, the inorganic layer may comprise an inorganic material that receives light and generates electrical energy. The inorganic material may include, but is not limited to, one or more of the following: silicon, monocrystalline silicon, polycrystalline silicon, amorphous silicon, InGaSe, CuSe, InSe, InGaP, GaAs, chalcopyrite compounds, perovskite compounds, and zinc styrene compounds.

[0067] InGaSe can include one or more substances or mixtures of In, In4Se3, InSe, In2Se3, GaSe, Ga2Se3, and Se; CuSe can include one or more substances or mixtures of Cu, Cu2Se, CuSe2, and Se; and InSe can include one or more substances or mixtures of In, In4Se3, InSe, In2Se3, and Se. Examples of chalcopyrite compounds can include one of CuAlS2, CuAlSe2, CuAlTe2, CuGaS2, CuGaSe2, CuGaTe2, CuInS2, CuInSe2, CuInTe2, AgAlS2, AgAlSe2, AgAlTe2, AgGaS2, AgGaSe2, AgGaTe2, AgInS2, AgInSe2, and AgInTe2. Examples of perovskite compounds can include one or more of SrTiO3 and CaTiO3. Examples of zinc stud mineral compounds may include group I2-II-IV-VI4 zinc stud mineral compounds, and specifically may include one or more of Cu2ZnSnS4, Cu2ZnSnSe4, Cu2ZnGeS4, Cu2ZnGeSe4, Cu2MnSnS4, Cu2MnSnSe4, Cu2MnGeS4, Cu2MnGeSe4, Ag2ZnSnS4, Ag2ZnSnSe4, Ag2ZnGeS4, Ag2ZnGeSe4, Ag2MnSnS4, Ag2MnSnSe4, Ag2MnGeS4, and Ag2MnGeSe4.

[0068] The organic layer can include organic materials that receive light and generate electrical energy. Inorganic materials are not particularly limited, but may include, for example, fullerenes (C... 60 Compounds, phenanthrene derivatives (e.g., 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrene (BCP)), phenylpyridine derivatives (e.g., 4,6-bis(3,5-di-4-pyridylphenyl)-2-methylpyrimidine (B4PymPm) or tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane (3TPYMB)), thiophene derivatives (e.g., poly(3-hexylthiophene-2,5-diyl)(P3HT)), phthalocyanine derivatives, porphyrin derivatives, triarylamine derivatives, carbazole derivatives, and oligothiophenes are one or more of these.

[0069] The organic-inorganic hybrid layer may include organic-inorganic hybrid materials that receive light and generate electrical energy. These organic-inorganic hybrid materials may include, but are not limited to, organic-inorganic perovskite compounds, such as halide-based organic-inorganic perovskite compounds. Examples of organic-inorganic hybrid materials include CH3NH3PbI3, CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3SnI3, CH3NH3SnBr3, CH3NH3SnCl3, and CH3NH3PbI... (3-x) Cl x CH3NH3PbI (3-x) Br x CH3NH3PbBr (3-x) Cl x CH3NH3Pb (1-y) SnyI3、CH3NH3Pb (1-y) Sn y Br3, CH3NH3Pb (1-y) Sn y Cl3, CH3NH3Pb (1-y) Sn y I (3-x) Cl x CH3NH3Pb (1-y) Sn y I (3-x) Br x and CH3NH3Pb (1-y) Sn y Br (3-x) Cl x (0≤x≤3, 0≤y≤1) and may include compounds in which CFH2NH3, CF2HNH3, CF3NH3 or NH2CH=NH2 are used instead of CH3NH3.

[0070] The dye-sensitized layer may include a dye that receives light to generate electrical energy. There are no particular limitations on the dye, but it may include one or more of ruthenium complexes, indoline organic dyes, and natural dyes. Examples of ruthenium complexes may include one or more of N3 and N719. Examples of indoline organic dyes may include D149. Natural dyes may be extracted from fruits or vegetables and may include one or more of, for example, anthocyanins, chlorophyll, β-carotene, curcumin, betalain, and rosmarinic acid.

[0071] In one instance, the energy conversion layer 130 may include a scintillator that absorbs the energy of radiation generated from the radiation source 120 and converts the radiated energy into light or electrical energy.

[0072] For example, the energy conversion layer 130 may contain at least a scintillator internally. In another example, the energy conversion layer 130 may contain a thin film layer containing a scintillator disposed on at least one surface.

[0073] In one instance, the scintillator may include, but is not limited to, one or more inorganic and organic compounds. Examples of inorganic compounds may include one or more of NaI(Tl), CsI(Tl), GoS, CsI(Tl), CsI(Na), CsI(pure), CsF, KI(Tl), LiI(Eu), BGO, BaF2, CaF2(Eu), ZnS(Ag), CaWO4, CdWO4, YAG(Ce)(Y3Al5O12(Ce)), GSO, LSO, GAGG:Ce, ZnO(Ga), LaCl3(Ce), and LaBr3(Ce). Examples of organic compounds may include one or more of anthracene, stilbene, naphthalene, and polyethylene naphthalate.

[0074] In one example, the power conversion layer 130 may comprise an N-type semiconductor 131 and a P-type semiconductor 132. In one example, the N-type semiconductor 131 may be silicon or diamond doped with elements of Group 15 of the periodic table (nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb)), or it may be a compound semiconductor doped with elements of Group 15 of the periodic table (nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb)). In this specification, a compound semiconductor refers to a semiconductor composed of two or more elements, and examples of compound semiconductors may include silicon carbide (SiC), silicon oxide (SiO2), aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs), and gallium nitride (GaN). In this specification, examples of the P-type semiconductor 132 may be silicon or diamond doped with elements of Group 13 of the periodic table (boron (B), aluminum (Al), gallium (Ga) or indium (In)), or may be compound semiconductors doped with elements of Group 13 of the periodic table (boron (B), aluminum (Al), gallium (Ga) or indium (In)).

[0075] In one example, the N-type semiconductor 131 and the P-type semiconductor 132 may each independently comprise a metal oxide with the chemical formula AMO3. Here, A may be selected from La, Ba, Sr, and K, and M may be selected from Al, In, Ga, Ti, Sn, Hf, Ta, and Zr. In some cases, the N-type semiconductor 131 and the P-type semiconductor 132 may each independently comprise multiple different types of metal oxides. Different types may refer to different elements A or M. In one example, the N-type semiconductor 131 and the P-type semiconductor 132 may form a homojunction with each other.

[0076] For example, N-type semiconductor 131 and P-type semiconductor 132 can each independently include BaSnO3, BaHfO3, BaZrO3, and BaHfO3. 1-x Ti x O3 (where 0 < x < 1), Ba 1-x La x SnO3 (where 0 < x < 1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1- x Ga x O3 (where 0 < x < 1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x (where 0 < x < 1) and one or more of LaAlO3. In one example, the electrode 110 and the energy conversion layer 130 can be fabricated by, for example, deposition or epitaxial growth, but are not limited thereto. Here, the deposition can be one or more of physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD).

[0077] In an exemplary embodiment of the present invention, a radioactive battery 10 has an energy conversion layer 130 surrounding at least a portion of a first electrode 111 in at least a portion of a plurality of radioactive cell 100. Additionally, a radiation source 120 may surround at least a portion of the energy conversion layer 130. Furthermore, a second electrode 112 may surround at least a portion of the radiation source 120. In another embodiment of the radioactive battery 10, the energy conversion layer 130 may be located within the cross-section of the radioactive cell 100 (e.g., in...). Figure 1 (on the plane from D2 to D3 direction), spaced apart from the first electrode 111 and the second electrode 112.

[0078] In one example, the energy conversion layer 130 may surround the side of the first electrode 111. Additionally, the radiation source 120 may surround the side of the energy conversion layer 130. Furthermore, the second electrode 112 may surround the side of the radiation source 120. In this specification, the side of the radioactive cell 100, electrode 110, radiation source 120, or energy conversion layer 130 may refer to surfaces other than the upper surface 100US and the lower surface 100BS (the surfaces in the first direction D1).

[0079] In one example, the energy conversion layer 130 may be in contact with at least a portion of the first electrode 111. Additionally, the radiation source 120 may be in contact with at least a portion of the energy conversion layer 130. Furthermore, the second electrode 112 may be in contact with at least a portion of the radiation source 120.

[0080] In one example, the N-type semiconductor 131 may be located on one side of the P-type semiconductor 132 in the plane from the D2 direction to the D3 direction (e.g., between the P-type semiconductor 132 and the second electrode 112). Thus, the P-type semiconductor 132 may be located on one side of the N-type semiconductor 131 (e.g., between the N-type semiconductor 131 and the first electrode 111).

[0081] In one example, the N-type semiconductor 131 may surround at least a portion of the P-type semiconductor 132. Additionally, the N-type semiconductor 131 may surround the sidewalls of the P-type semiconductor 132. In one example, the surface area of ​​the N-type semiconductor 131 may be larger than the surface area of ​​the P-type semiconductor 132. Furthermore, the first electrode 111 may be an anode, and the second electrode 112 may be a cathode.

[0082] In one example, the P-type semiconductor 132 may surround at least a portion of the first electrode 111. Additionally, the P-type semiconductor 132 may surround the sidewalls of the first electrode 111. Meanwhile, the first electrode 111 may be a cathode, and the second electrode 112 may be an anode.

[0083] In one example, the energy conversion layer 130 may be in contact with at least a portion of the radiation source 120. For instance, by setting the energy conversion layer 130 and the radiation source 120 in contact, radiation generated from the radiation source 120 can easily reach the depletion region of the energy conversion layer 130, which facilitates the formation of electron-hole pairs.

[0084] In an exemplary embodiment of the present invention, the radioactive unit cell 100 may include a connector 200, which is disposed in at least a portion of the gaps between any adjacent radioactive unit cells 100A and 100B among the plurality of radioactive unit cells 100, and electrically connected to the electrodes 110 of the adjacent radioactive unit cells 100A and 100B respectively.

[0085] In one example, the connector 200 may comprise a conductive material. In this case, examples of conductive materials may include one or more selected from the group consisting of tin (Sn), indium (In), bismuth (Bi), antimony (Sb), copper (Cu), silver (Ag), zinc (Zn), and lead (Pb). The number, spacing, arrangement, and shape of the connectors 200 are not limited to those shown in the figures and may be varied according to the design. (Refer to...) Figure 1 The connector 200 may have a solder ball or solder bump shape.

[0086] Reference Figure 2 In one example, the connector 200 may include a first connector 210 and a second connector 220, wherein the first connector 210 is electrically connected to the first electrodes 111A and 111B of adjacent radioactive unit cells 100A and 100B, and the second connector 220 is electrically connected to the second electrodes 112A and 112B of adjacent radioactive unit cells 100A and 100B.

[0087] In one example, adjacent radioactive cell elements 100A and 100B may include a first radioactive cell element 100A and a second radioactive cell element 100B. The specific structures included in each of the radioactive cell elements 100A and 100B can be referenced to the descriptions above or below, provided they are not contradictory. The first radioactive cell element 100A may include an electrode 110A, a first radioactive source 120A, and a first energy conversion layer 130A. Electrode 110A includes a first-1 electrode 111A and a first-2 electrode 112A. The second radioactive cell element 100B may include an electrode 110B, a second radioactive source 120B, and a second energy conversion layer 130B. Electrode 110B includes a second-1 electrode 111B and a second-2 electrode 112B.

[0088] In one example, the first connector 210 may contact the first-1 electrode 111A and the second-1 electrode 111B respectively to electrically connect the first-1 electrode 111A and the second-1 electrode 111B to each other. The second connector 220 may contact the first-2 electrode 112A and the second-2 electrode 112B respectively to electrically connect the first-2 electrode 112A and the second-2 electrode 112B to each other.

[0089] Reference Figure 1 In one example, at least one connector 200 may be disposed between each of the plurality of radioactive cell 100, and thereby all the first electrodes 111 of each radioactive cell 100 in the plurality of radioactive cell 100 may be electrically connected to the first connector 210, and all the second electrodes 112 may be electrically connected to the second connector 220. With this structure, the radioactive cell 100 can generate high-density energy.

[0090] A radioactive battery 10 according to an exemplary embodiment of the present invention may include an insulating layer 300 disposed in at least a portion of the gaps between any adjacent radioactive unit cells 100A and 100B among a plurality of radioactive unit cells 100 stacked along a first direction D1. In one example, the insulating layer 300 may be disposed between adjacent radioactive unit cells 100 provided with connectors 200. Simultaneously, the insulating layer 300 can prevent short circuits due to contact between electrodes. The insulating layer 300 can prevent accidental damage caused by the transmission of beta rays generated by the radiation source 120 of each radioactive unit cell 100 to other radioactive unit cells 100. Relatedly, the insulating layer 300 may be made of or contain a material or combination of materials that shield against beta rays, and such materials may include shielding materials described herein or known in the art. For example, the insulating layer 300 may include a composite material such as a beta ray shielding material, and the composite material may be surrounded by an outer layer containing an electrically insulating material. Such an outer layer may, for example, be located above or below the beta-ray shielding material along the first direction D1, and around the connector 200 in the plane from the second direction D2 to the third direction D3 (i.e., between each connector 200 and the beta-ray shielding material).

[0091] In one instance, the insulating layer 300 is not particularly limited, as long as it is made of a material with electrical insulating properties, but may include one or more of the following: silicates (e.g., TEOS), silicon nitride (SiN), hafnium oxide, hafnium silicon oxide, aluminum hafnium oxide, lanthanum oxide, aluminum lanthanum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, and aluminum oxide.

[0092] In one example, the connector 200 may extend through the insulating layer 300. Specifically, the connector 200 may include regions exposed from both surfaces of the insulating layer (300) and regions embedded in the insulating layer 300.

[0093] In one example, connector 200 can electrically connect the electrodes 110A and 110B of adjacent radioactive cell cells 100A and 100B through areas exposed from the two surfaces of insulating layer 300. Alternatively, in another example, connector 200 can be fixed in position within a region embedded in insulating layer 300 while stably electrically connecting the electrodes 110 of adjacent radioactive cell cells 100.

[0094] In one instance, refer to Figure 2The width LT of the radioactive cell 100 can be greater than the thickness TH of the radioactive cell 100. Here, the width LT of the radioactive cell 100 can refer to the width in the second direction D2 or the third direction D3, and the thickness TH of the radioactive cell 100 can refer to the width in the first direction D1. Thus, the radioactive cell 100 can form a more compact stacked structure.

[0095] In one example, the ratio of the thickness TH of the radioactive cell 100 to its width LT, TH / LT, can be 0.005 to 0.01, 0.0055 to 0.015, or 0.006 to 0.02. This allows the radioactive cell 100 to form a more compact stacked structure. Additionally, the width LT of the radioactive cell 100 can be, for example, 1 cm to 50 cm, 5 cm to 30 cm, or 10 cm to 20 cm. Furthermore, the thickness TH of the radioactive cell 100 can be, for example, 10 μm to 300 μm, 50 μm to 250 μm, or 100 μm to 200 μm.

[0096] Figure 4a , Figure 4b , Figure 4c , Figure 4d and Figure 4e yes Figure 3 This is an enlarged view of the P portion and a plan view showing the interface between the radiation source 120 and the energy conversion layer 130. Figure 5a , Figure 5b , Figure 5c , Figure 5d and Figure 5e yes Figure 3 An enlarged view of the Q portion, and a plan view showing the interface between the N-type semiconductor and the P-type semiconductor.

[0097] In a radioactive cell 100 of an exemplary embodiment of the present invention, high output is advantageous when radiation generated from the radiation source 120 is incident on the energy conversion layer 130 over a relatively wide area. For example, as described above, the energy conversion layer 130 and the radiation source 120 may contact each other in at least a partial area to form an interface, and specifically, the radiation source 120 may form an interface with the N-type semiconductor 131. As the contact area between the radiation source 120 and the N-type semiconductor 131 increases, the amount of electron-hole pairs formed per unit time increases, thus improving the efficiency of the radioactive cell 10.

[0098] In one example, the radiation source 120 and the N-type semiconductor 131 can define a boundary extending perpendicular to the direction in which the radiation source 120 and the N-type semiconductor 131 are separated from each other. For example, when the radiation source 120 and the N-type semiconductor 131 are side by side in the cross-section of the radioactive cell 10 (e.g., in a plane from the D2 direction to the D3 direction), the boundary can be flat to form a parallel interface (see [link to documentation]). Figure 4a Alternatively, if the radiation source 120 and the N-type semiconductor 131 are concentric with each other (e.g., a cylindrical radioactive cell 100), the interface may extend from the central axis of the radioactive cell 100 by a fixed radius. In another example, the radiation source 120 and the N-type semiconductor 131 may have various types of interfaces to increase the surface area of ​​contact with each other. For example, a portion of the interface may extend along a direction in which the radiation source 120 and the N-type semiconductor 131 are spaced apart from each other (e.g., the radial direction of the cylindrical radioactive cell 100). Specifically, the interface may have an uneven shape, such as a square or rectangular wave (see...). Figure 4b ), concave triangle (see Figure 4c ), wavy (see) Figure 4d ), stepped triangle (see) Figure 4e Or, a non-flat shape such as a sine wave (not shown), and the non-flat shape may have a pattern. However, this is merely an example, and there are no particular limitations as long as the interface shape increases the contact surface area.

[0099] Reference Figures 4b to 4e In the stacking direction of the radiation source 120 and the N-type semiconductor 131, the distance between the low and high points of the uneven shape of the interface can be referred to as the first height h1. In one example, the stacking direction of the radiation source 120 and the N-type semiconductor 131 can be a second direction D2 or a third direction D3. Figures 4b to 4e In this configuration, the stacking direction of the radiation source 120 and the N-type semiconductor 131 can point to a third direction D3. In one example, the first height h1 can be, but is not limited to, 0.01% to 90%, 0.01% to 80%, 0.01% to 70%, 0.01% to 60%, or 0.01% to 50% of the width of the radiation source 120 or the N-type semiconductor 131. Here, the width of the radiation source 120 or the N-type semiconductor 131 can refer to, for example, [reference to...]. Figure 3 The width in the second direction D2 or the third direction D3.

[0100] Reference Figures 4b to 4e In a direction perpendicular to the first height h1 of the uneven shape (e.g., third direction D3) (e.g., second direction D2), the uneven shape may have a pattern of a first width d1. The first width d1 may be, but is not limited to, 10 times the width of the radiation source 120 or the N-type semiconductor 131. -5 % to 30%, 10-4 % to 30%, 10 -3 % to 30% or 10 -2 % to 30%.

[0101] In one instance, the surface area formed by the uneven shape at the interface is the second area S. B The area of ​​the interface between the radiation source 120 and the N-type semiconductor 131, cut into a flat shape without any irregularities in a direction perpendicular to the stacking direction, is the first area S. A The second area S B With the first area S A The ratio of S B / S A The area can be, but is not limited to, 1.1 to 4, 1.1 to 3.5, 1.1 to 3, or 1.1 to 2.5. Therefore, the contact area between the radiation source 120 and the N-type semiconductor 131 is wider, and as the surface area increases, the amount of electron-hole pairs formed per unit time increases, thus improving the efficiency of the radioactive battery 10. In another example, the first area S... A It can be defined as follows Figure 4a The surface area of ​​the interface with a smooth shape (i.e., no irregular shape) between the radiation source 120 and the N-type semiconductor 131 is shown. Second area S B It can be defined as follows Figures 4b to 4e The surface area of ​​the interface with an uneven shape between the radiation source 120 and the N-type semiconductor 131 is shown.

[0102] In a radioactive cell 100 of an exemplary embodiment of the present invention, the N-type semiconductor 131 and the P-type semiconductor 132 of the energy conversion layer 130 can contact each other and form an interface. Furthermore, since the N-type semiconductor 131 and the P-type semiconductor 132 are in contact over a wider area, the number of electron-hole pairs generated per unit time increases with the increase in contact surface area, thereby improving the efficiency of the radioactive cell 10.

[0103] In one example, N-type semiconductor 131 and P-type semiconductor 132 can define a boundary extending perpendicular to the direction in which they are separated from each other. For example, when N-type semiconductor 131 and P-type semiconductor 132 are side-by-side in the cross-section of the radioactive cell 10 (e.g., in a plane from the D2 direction to the D3 direction), the boundary can be flat and form a parallel interface (see [link to relevant documentation]). Figure 5aAlternatively, if the N-type semiconductor 131 and the P-type semiconductor 132 are concentric with each other (e.g., a cylindrical radiating cell 100), the interface may extend from the central axis of the radiating cell 100 by a fixed radius. In another example, the N-type semiconductor 131 and the P-type semiconductor 132 may have various types of interfaces to increase the surface area of ​​contact with each other. For example, a portion of the interface may extend along a direction in which the N-type semiconductor 131 and the P-type semiconductor 132 are spaced apart from each other (e.g., the radial direction of the cylindrical radiating cell 100). Specifically, the interface may have a rough shape, such as a square or rectangular wave-shaped concave shape (see...). Figure 5b ), concave triangle (see Figure 5c ), wavy waveform (see) Figure 5d ), stepped triangle (see) Figure 5e (or a sine wave (not shown), and irregular shapes can form patterns. However, this is merely an example, and there are no particular limitations as long as the interface shape increases the contact surface area.)

[0104] Reference Figures 5b to 5e In the stacking direction of N-type semiconductor 131 and P-type semiconductor 132, the distance between the low and high points of the uneven shape of the interface can be referred to as the second height h2. In one example, the stacking direction of N-type semiconductor 131 and P-type semiconductor 132 can be either the second direction D2 or the third direction D3. Figures 5b to 5e In this configuration, the stacking direction of the N-type semiconductor 131 and the P-type semiconductor 132 can point to a third direction D3. In one example, the second height h2 can be, but is not limited to, 0.01% to 90%, 0.01% to 80%, 0.01% to 70%, 0.01% to 60%, or 0.01% to 50% of the width of the N-type semiconductor 131 or the P-type semiconductor 132. Here, the width of the N-type semiconductor 131 or the P-type semiconductor 132 can refer to, for example, [reference needed]. Figure 3 The width in the second direction D2 or the third direction D3.

[0105] Reference Figures 5b to 5e In a direction perpendicular to the direction of the second height h2 of the uneven shape (e.g., the third direction D3) (e.g., the second direction D2), the uneven shape may have a pattern with a second width d2. The second width d2 may be, but is not limited to, 10 times the width of the N-type semiconductor 131 or the P-type semiconductor 132. -5 % to 30%, 10 -4 % to 30%, 10 -3 % to 30% or 10 -2 % to 30%.

[0106] In one instance, the fourth area S is formed by the uneven shape at the interface. DThe third area S is when the interface between the N-type semiconductor 131 and the P-type semiconductor 132 is cut into a flat shape without any unevenness in a direction perpendicular to the stacking direction. C The fourth area S D With the third area S C The ratio of surface area S D / S C The area can be, but is not limited to, 1.1 to 4, 1.1 to 3.5, 1.1 to 3, or 1.1 to 2.5. Thus, the N-type semiconductor 131 and the P-type semiconductor 132 are in contact over a wider range, and the amount of electron-hole pairs formed per unit time increases with increasing surface area, thereby improving the efficiency of the radioactive cell 10. In another example, the third area S... C It can be defined as follows Figure 5a The surface area of ​​the interface with a smooth shape (i.e., no irregular shape) between the N-type semiconductor 131 and the P-type semiconductor 132 shown. Fourth area S D It can be defined as follows Figures 5b to 5e The surface area of ​​the interface with an uneven shape between the N-type semiconductor 131 and the P-type semiconductor 132 shown.

[0107] In a radioactive cell 100 of an exemplary embodiment of the present invention, the energy conversion layer 130 may include an intrinsic semiconductor between an N-type semiconductor 131 and a P-type semiconductor 132. The intrinsic semiconductor may be disposed between the N-type semiconductor 131 and the P-type semiconductor 132 to further extend the depletion region. Furthermore, the intrinsic semiconductor may be in contact with both the N-type semiconductor 131 and the P-type semiconductor 132, and the interface between the intrinsic semiconductor and the N-type semiconductor 131, and the interface between the intrinsic semiconductor and the P-type semiconductor 132, may be formed in a manner that allows them to contact each other over a wide range as described above.

[0108] In one example, the uneven shapes formed at the interfaces between the radiation source 120 and the N-type semiconductor 131, and between the N-type semiconductor 131 and the P-type semiconductor 132, can be achieved by forming microstructures using printing processes such as CLICHÉ, etching processes such as wet etching or dry etching, or photolithography. CLICHÉ can be a metal plate with uneven surfaces. Specifically, for example, when the first height h1, the first width d1, the second height h2, and the second width d2 are 1 μm or more and less than 1,000 μm, the uneven shapes can be manufactured by wet etching. Alternatively, specifically, for example, when the first height h1, the first width d1, the second height h2, and the second width d2 are 1 nm or more and less than 1,000 nm, the uneven shapes can be manufactured by dry etching.

[0109] Figure 6This is a plan view showing at least a portion of a radioactive cell 100 according to an exemplary embodiment of the present invention. Figure 7 This is a plan view showing at least a portion of a radioactive cell 100 according to an exemplary embodiment of the present invention.

[0110] In one instance, refer to Figure 6 The radioactive cell 100 may include a hole transport layer (HTL) 140 between the first electrode 111 and the P-type semiconductor 132. Additionally, in one example, refer to... Figure 7 The radioactive cell 100 may include an electron transport layer (ETL) 150 between the second electrode 112 and the radiation source 120. Simultaneously, although not shown in the figures, the radioactive cell 100 may include an electron transport layer 150 without including a hole transport layer 140. The hole transport layer 140 or the electron transport layer 150 may assist in the transport of holes or electrons. Furthermore, the first electrode 111 may be a cathode, and the second electrode 112 may be an anode.

[0111] In one example, the hole transport layer 140 may contain materials used in hole transport layers in the fields of perovskite solar cells or organic light-emitting diodes (OLEDs). For example, the hole transport layer 140 may contain PEDOT:PSS (poly(3,4-ethylenedioxythiophene)), NiO, etc. x (where x is greater than 0 and less than 1 or greater than 0 and less than 0.3), Spiro-OMeTAD (2,2',7,7'-tetra(N,N-di-p-methoxyaniline)-9,9'-spirodifluorene), N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB or NPD), 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), and PTAA (polytriarylamine), but not limited to these.

[0112] In one example, electron transport layer 150 may comprise materials used in electron transport layers in the fields of perovskite solar cells or organic light-emitting diodes (OLEDs). For example, electron transport layer 150 may comprise one or more of, but is not limited to, titanium dioxide, tin oxide, zinc oxide, Alq3 (tris(8-hydroxyquinoline)aluminum), BPhen (4,7-diphenyl-1,10-phenanthroline), TPBi (2,2',2''-(1,3,5-phenyltriyl)-tris(1-phenyl-1-H-benzimidazole)), TmPyPB (1,3,5-tris(m-pyridin-3-ylphenyl)benzene), and fullerenes and their derivatives (e.g., PCBM).

[0113] Figure 8 This is a plan view showing at least a portion of a radioactive cell 100 according to an exemplary embodiment of the present invention.

[0114] In one example, the radioactive cell 100 may include a dielectric layer 115 surrounding at least a portion of the first electrode 111. That is, the radioactive cell 100 may include a dielectric layer 115 disposed on one surface of the first electrode 111 with respect to the spacing direction between the first electrode 111 and other components of the radioactive cell 100. For example, as... Figure 8 As shown, the dielectric layer 115 can be concentrically arranged inside the first electrode 111 within a cross-section (e.g., in a plane from the D2 direction to the D3 direction).

[0115] In one example, dielectric layer 115 may comprise a dielectric material. In one example, the dielectric material is not particularly limited, as long as it is used in the art. Dielectric layer 115 can optimize the arrangement of the radiation source 120 and can further improve electrical stability by minimizing leakage current.

[0116] In one example, dielectric layer 115 may comprise a low-k dielectric with a dielectric constant less than 3.9. There are no particular limitations on the low-k dielectric, as long as it is used in the art, but it may include one or more of the following: fluorinated tetraethyl orthosilicate (FTEOS), silsesquioxane (HSQ), dibenzocyclobutene (BCB), tetramethoxysilane (TMOS), octamethylcyclotetrasiloxane (OMCTS), hexamethyldisiloxane (HMDS), trimethylsilyl borate (TMSB), diacetoxyditert-butoxysilane (DADBS), trimethylsilyl phosphate (TMSP), polytetrafluoroethylene (PTFE), TonensilaZen (TOSZ), fluorosilicate glass (FSG), polyimide nanofoam, polypropylene oxide, carbon-doped silica (CDO), organosilicon glass (OSG), SiLK, amorphous fluorocarbons, silica aerogel, silica dry gel, and mesoporous silica. When the dielectric layer 115 contains a low-k dielectric, leakage current can be minimized, and for example, radiation generated from the radiation source 120 can be efficiently transferred to the energy conversion layer 130.

[0117] In one example, dielectric layer 115 may comprise a high-k dielectric with a dielectric constant of 3.9 or higher. There are no particular limitations on the high-k dielectric, as long as it is used in the art; however, examples of high-k dielectrics may include, but are not limited to, one or more selected from the group consisting of boron nitride, hafnium oxide, hafnium silicon oxide, aluminum hafnium oxide, lanthanum oxide, aluminum lanthanum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. When dielectric layer 115 comprises a high-k dielectric, leakage current can be minimized, and a radioactive cell 10 with high integration density can be designed.

[0118] Figure 9 This is a plan view that partially illustrates at least a portion of a radioactive cell 100 according to an exemplary embodiment of the present invention. Figure 10 This is a perspective view showing a portion of adjacent radioactive cell cells 100A and 100B in a radioactive battery 10 according to an exemplary embodiment of the present invention.

[0119] In a radioactive cell 100 according to an exemplary embodiment of the present invention, at least one of the first electrode 111 and the second electrode 112 may include through holes 111H and 112H extending along a first direction D1 perpendicular to the upper surface 110US of the electrode 110. Through holes 111H and 112H may extend through the first electrode 111 and the second electrode 112 along the first direction D1, respectively. The first electrode 111 may include a through hole 111H extending along the first direction D1. The second electrode 112 may include a through hole 112H extending along the first direction D1. Through holes 111H and 112H may be formed in the first electrode 111 and the second electrode 112.

[0120] In one instance, vias 111H and 112H can be manufactured by, for example but not limited to, physical via methods (e.g., using tools such as drill bits), wet etching, dry etching, or photolithography.

[0121] In one example, the connector 200 may include a region disposed in at least a portion of the through holes 111H and 112H. That is, at least a portion of the connector 200 may be disposed in the through holes 111H and 112H. In one example, the connector 200 disposed in at least a portion of the through holes 111H and 112H may be manufactured by coating a paste containing conductive material or by a printing method. Meanwhile, the connector 200 may include a region not disposed in at least a portion of the through holes 111H and 112H, which may be embedded in the insulating layer 300.

[0122] In one example, the first connector 210 may include a region disposed in at least a portion of the through hole 111H formed in the first electrode 111. The second connector 220 may include a region disposed in at least a portion of the through hole 112H formed in the second electrode 112.

[0123] In one example, through-hole 111HA can be formed in the first-1 electrode 111A of the first radioactive unit cell 100A, and through-hole 112HA can also be formed in the first-2 electrode 112A. Additionally, through-hole 111HB can be formed in the second-1 electrode 111B of the second radioactive unit cell 100B, and through-hole 112HB can also be formed in the second-2 electrode 112B.

[0124] In one example, the first connector 210 may include a region disposed in at least a portion of the through hole 111HA formed in the first electrode 111A and the through hole 111HB formed in the second electrode 111B. The second connector 220 may include a region disposed in at least a portion of the through hole 112HA formed in the first electrode 112A and the through hole 112HB formed in the second electrode 112B.

[0125] Figure 11 This is a plan view that partially illustrates at least a portion of a radioactive cell 100 according to an exemplary embodiment of the present invention. Figure 12 This is a perspective view showing at least a portion of a radioactive cell 100 according to an exemplary embodiment of the present invention. Figure 11 and Figure 12 These are exemplary embodiments of the radiation source 120 with different shapes, and descriptions of other configurations can be made with reference to the foregoing, provided they do not contradict each other.

[0126] In one embodiment of the radioactive battery 10 of the present invention, the radioactive cell 100 may include an electrode 110, which includes a first electrode 111 and a second electrode 112. Additionally, the radioactive cell 100 may include an energy conversion layer 130 disposed between the first electrode 111 and the second electrode 112. Furthermore, the radioactive cell 100 may include a radioactive source 120 disposed on at least one of the first electrode 111 and the second electrode 112.

[0127] Reference Figure 11 The radiation source 120 may be disposed on the second electrode 112. Although not shown in the figures, the radiation source 120 may be disposed on the first electrode 111 instead of the second electrode 112. Refer to the following description. Figure 16 The radiation source 120 can be independently disposed on the first electrode 111 and the second electrode 112 respectively.

[0128] In one example, at least a portion of the plurality of radioactive cell cores 100 may have a radiation source 120 that does not penetrate the first electrode 111 or the second electrode 112 in the first direction D1. Furthermore, the radiation source 120 may not be located along a cross-section that is not spaced apart from the first electrode 111 and the second electrode 112 (i.e., in...). Figure 11 The radiation source 120 can be embedded in the first electrode 111 or the second electrode 112 in a direction that separates the first electrode 111 or the second electrode 112 from each other, and the radiation source 120 can be configured as independent portions that are spaced apart from each other in the lateral direction of the direction in which the first electrode 111 or the second electrode 112 is spaced apart from each other. For example, in Figure 11 In the cylindrical radioactive cell 100 shown, when the first electrode 111 and the second electrode 112 are spaced apart from each other in the radial direction, the independent portions of the radioactive source 120 can be spaced apart from each other in the circumferential direction, while partially penetrating the second electrode 112 in the radial direction.

[0129] In one example, the energy conversion layer 130 may be in contact with at least a portion of the radiation source 120, at least a portion of the first electrode 111, and at least a portion of the second electrode 112. Thus, electrons in electron-hole pairs formed in the energy conversion layer 130 can migrate directly along the contacted second electrode 112.

[0130] In one example, the first electrode 111 can be a cathode, and the second electrode 112 can be an anode. Here, the radiation source 120 can be embedded in the second electrode 112. Thus, the radiation source 120 can provide radiation to the energy conversion layer 130 more efficiently.

[0131] In one example, in at least a portion of a plurality of radioactive cell 100, the energy conversion layer 130 comprises an N-type semiconductor 131 and a P-type semiconductor 132 as described above. Here, the N-type semiconductor 131 may surround at least a portion of the P-type semiconductor 132. Additionally, the P-type semiconductor 132 may surround at least a portion of the first electrode 111. Here, the first electrode 111 may be a cathode, and the second electrode 112 may be an anode. Furthermore, a radiation source 120 may be disposed on and embedded in the second electrode 112. That is, the radiation source 120 may not be located along a cross-section where the first electrode 111 and the second electrode 112 are spaced apart from each other (i.e., in...). Figure 11 The second electrode 112 is penetrated in the plane from the D2 direction to the D3 direction.

[0132] In one example, in at least a portion of the plurality of radioactive cell cores 100, when viewed in a first direction D1 perpendicular to the upper surface 110US of the electrode, the radioactive source 120 may have an extended shape ES extending in a direction away from the energy conversion layer 130. Here, the direction away from the energy conversion layer 130 may include, for example... Figure 11 The radiation directions shown are towards the outside of the radioactive cell 10 and towards the center of the radioactive cell 10.

[0133] In one instance, there can be multiple extended shapes ES. When viewed in the first direction D1, the multiple extended shapes ES may not overlap with each other. This structure can minimize the amount of isotopes contained in the radioactive source 120.

[0134] In one example, the multiple extended shapes ES can have a specific arrangement. For example, the multiple extended shapes ES can be arranged in a manner that is substantially the same distance from the center of the radioactive cell 10. Alternatively, for example, when viewed in the first direction D1, the multiple extended shapes ES can be arranged in a manner that has a symmetrical structure based on a specific axis passing through the center of the radioactive cell 10. However, this is merely an example and is not a limitation.

[0135] In one instance, the shape of the extended shape ES is not particularly limited, but the width of the extended shape ES can decrease as it moves away from the energy conversion layer 130. (See reference...) Figure 11 The width of the extended shape ES can gradually decrease as it moves away from the energy conversion layer 130. In addition, at least a portion of the end of the extended shape ES can be circular, but is not limited to this. Figure 13 The structure of an electric device 1 according to an exemplary embodiment of the present invention is shown schematically.

[0136] A radioactive battery 10 of an exemplary embodiment of the present invention may include a shielding member 15 that accommodates a plurality of radioactive cell 100 and a connector 200.

[0137] The shielding member 15 may comprise a material capable of shielding or reflecting radiation. For example, the radiation described above may be emitted from the radiation source 120 (e.g., alpha, beta, and / or gamma rays). For example, the shielding member 15 may comprise one or more of metallic materials such as copper, silver, and aluminum, and polymeric materials such as polyolefins, polyesters, and poly(meth)acrylates. Polyolefins may include, but are not limited to, one or more of polyethylene, polypropylene, and ethylene-propylene copolymers. Polyesters may include, but are not limited to, polyethylene terephthalate. Poly(meth)acrylates may include, but are not limited to, ethylene-(meth)acrylate copolymers. If the radiation source 120 contains an isotope that emits gamma rays, the shielding member 15 may, for example, comprise one or more of lead (Pb) and concrete.

[0138] The shielding component 15 can minimize electromagnetic interference, parasitic loops, or power loss caused by driving multiple radioactive unit cells 100 and connectors 200.

[0139] In one exemplary embodiment of the present invention, the power device 1 may include a load 30 electrically connected to the radioactive battery 10 via a conductor 20. Meanwhile, the conductor 20 may include a first conductor 21 electrically connected to a first connector 210 and a second conductor 22 electrically connected to a second connector 220.

[0140] In one example, the first wire 21 can pass through the shielding member 15 and be electrically connected to a load 30 disposed outside the radioactive battery 10. Additionally, the second wire 22 can pass through the shielding member 15 and be electrically connected to the load 30 disposed outside the radioactive battery 10.

[0141] In one example, the power unit 1 may include an energy storage device 40 electrically connected to the radioactive battery 10 via a conductor 20. The energy storage device 40 is not particularly limited, as long as it can store electricity, and can be, for example, a capacitor or a backup power supply device for an uninterruptible power supply system.

[0142] In one example, the power device 1 may include a switching device 50 that connects the conductor 20 to a load 30 or an energy storage device 40. The switching device 50 can connect the conductor 20 to the load 30 or to the energy storage device 40 according to an electrical signal. In one example, the switching device 50 may be a component device that includes a metal-oxide-semiconductor field-effect transistor (MOSFET) structure.

[0143] In one example, when wire 20 is connected to load 30 via switch device 50, the electrical connection between radioactive battery 10 and energy storage device 40 can be interrupted. Similarly, when wire 20 is connected to energy storage device 40 via switch device 50, the electrical connection between radioactive battery 10 and load 30 can be interrupted. As a result, the power flow of the radioactive battery 10, which continuously generates electricity, can be controlled.

[0144] Figures 14 to 16 This is a plan view showing at least a portion of a radioactive cell 100 according to one embodiment of this application. Figures 14 to 16 The description can be found here. Figures 1 to 13 The descriptions are acceptable as long as they do not contradict each other.

[0145] Reference Figure 14In a radioactive battery 10 according to one embodiment of this application, a radioactive source 120 surrounds at least a portion of a first electrode 111 in at least a portion of a plurality of radioactive cell 100. Additionally, an energy conversion layer 130 may surround at least a portion of the radioactive source 120. Furthermore, a second electrode 112 may surround at least a portion of the energy conversion layer 130. This structure is advantageous in minimizing the amount of isotope contained in the radioactive source 120 and maximizing the efficiency of the radioactive battery 10.

[0146] In one example, the radiation source 120 may surround the side of the first electrode 111. Additionally, the energy conversion layer 130 may surround the side of the radiation source 120. Furthermore, the second electrode 112 may surround the side of the energy conversion layer 130.

[0147] In one example, the radiation source 120 may be in contact with at least a portion of the first electrode 111. Additionally, the energy conversion layer 130 may be in contact with at least a portion of the radiation source 120. Furthermore, the second electrode 112 may be in contact with at least a portion of the energy conversion layer 130.

[0148] Reference Figure 15 In a radioactive battery 10 according to one embodiment of this application, in at least a portion of a plurality of radioactive cell 100, an energy conversion layer 130 includes a first energy conversion layer 130-1 and a second energy conversion layer 130-2. In one example, a radioactive source 120 may surround at least a portion of the first energy conversion layer 130-1. Additionally, the second energy conversion layer 130-2 may surround at least a portion of the radioactive source 120. Furthermore, the first energy conversion layer 130-1 may surround at least a portion of the first electrode 111. Additionally, the second electrode 112 may surround at least a portion of the second energy conversion layer 130-2.

[0149] In one example, the radiation source 120 may surround the sides of the first energy conversion layer 130-1. Additionally, the second energy conversion layer 130-2 may surround the sides of the radiation source 120. Furthermore, the first energy conversion layer 130-1 may surround the sides of the first electrode 111. Additionally, the second electrode 112 may surround the sides of the second energy conversion layer 130-2. This structure increases the surface area of ​​the interface between the radiation source 120 and the energy conversion layer 130, as well as the interface within the energy conversion layer 130, thereby increasing the amount of electron-hole pairs formed per unit time.

[0150] In one example, the radiation source 120 may be in contact with at least a portion of the first energy conversion layer 130-1. Additionally, the second energy conversion layer 130-2 may be in contact with at least a portion of the radiation source 120. Furthermore, the first energy conversion layer 130-1 may be in contact with at least a portion of the first electrode 111. Additionally, the second electrode 112 may be in contact with at least a portion of the second energy conversion layer 130-2.

[0151] In one example, the first energy conversion layer 130-1 may include a first N-type semiconductor 131-1 and a first P-type semiconductor 132-1. The second energy conversion layer 130-2 may include a second N-type semiconductor 131-2 and a second P-type semiconductor 132-2. The first N-type semiconductor 131-1 and the second N-type semiconductor 131-2 can be referred to the description of the N-type semiconductor 131 above, and the first P-type semiconductor 132-1 and the second P-type semiconductor 132-2 can be referred to the description of the P-type semiconductor 132 above.

[0152] Reference Figure 16 In a radioactive battery 10 according to one embodiment of the present application, in at least a portion of a plurality of radioactive cell 100, a radioactive source 120 includes a first radioactive source 120-1 disposed on a first electrode 111 and a second radioactive source 120-2 disposed on a second electrode 112.

[0153] In one example, when viewed in a first direction D1 perpendicular to the upper surface 110US of the electrode, the first radiation source 120-1 may have a first extended shape ES-1 extending in a direction away from the energy conversion layer 130. When viewed in the first direction D1 perpendicular to the upper surface 110US of the electrode, the second radiation source 120-2 may have a second extended shape ES-2 extending in a direction away from the energy conversion layer 130. Here, the direction away from the energy conversion layer 130 may include, for example... Figure 16 The diagram shows the radiation direction of the energy conversion layer 130 toward the outside of the radioactive battery 10 and the radiation direction toward the center of the radioactive battery 10.

[0154] In one example, the first extended shape ES-1 may extend in a direction toward the center of the radioactive cell 10. The second extended shape ES-2 may extend in a direction toward the outside of the radioactive cell 10.

[0155] In one example, based on the radiation direction outward from the center of the radioactive cell 10, the first radioactive source 120-1 and the second radioactive source 120-2 may not overlap each other. Also, in one example, the first radioactive source 120-1 and the second radioactive source 120-2 may be located at different corner points around the central axis. Therefore, the radii passing through discrete locations of the first radioactive source 120-1 may not pass through any discrete location of the second radioactive source 120-2. In one example, as... Figure 16 As shown, radial lines passing through discrete locations of the first radioactive source 120-1 can be located at the midpoint of the angle between adjacent second radioactive sources 120-2. Thus, the radioactive sources 120 can be efficiently arranged in space to minimize the amount of isotopes contained within the radioactive sources 120, while minimizing the shadowed areas at the interfaces where radiation does not reach the interior of the energy conversion layer 130, thereby improving the efficiency of the radioactive cell 10.

[0156] In one example, there can be multiple first extension shapes ES-1 and second extension shapes ES-2 independently. When viewed from the first direction D1, the multiple first extension shapes ES-1 can be non-overlapping with each other. When viewed from the first direction D1, the multiple second extension shapes ES-2 can be non-overlapping with each other. This structure can minimize the amount of isotopes contained in the radioactive source 120.

[0157] In one example, the first extended shape ES-1 and the second extended shape ES-2 can each have a specific arrangement independently. The specific arrangement can be referenced, for example... Figure 11 The content of the extended shape ES described herein. In one example, as the first extended shape ES-1 and the second extended shape ES-2 extend away from the energy conversion layer 130, their widths can each decrease independently. In addition, at least a portion of the ends of the first extended shape ES-1 and the second extended shape ES-2 can each be circular independently, but are not limited thereto.

[0158] Although various exemplary embodiments of the invention have been shown and described above, it will be apparent to those skilled in the art that modifications and changes can be made without departing from the scope of the invention as defined by the appended claims. Furthermore, exemplary embodiments can be implemented by removing some components from the above-described exemplary embodiments, and the embodiments can be implemented in combination with each other.

[0159] [Explanation of reference numerals in the attached figures]

[0160] 1...electrical equipment

[0161] 10...Radioactive batteries

[0162] 100...Radioactive unit cell

[0163] 110...electrode

[0164] 120...radioactive source

[0165] 130... Energy Conversion Layer

[0166] 200...connector

[0167] 300... insulation layer

Claims

1. A radioactive battery comprising: Multiple radioactive cell units, including: An electrode comprising a first electrode and a second electrode, a radiation source disposed between the first electrode and the second electrode, and an energy conversion layer disposed between the first electrode and the second electrode, wherein the energy conversion layer does not overlap with the radiation source when viewed in a first direction perpendicular to the upper surface of the electrode; as well as A connector is disposed in at least a portion of the gaps between any adjacent radioactive unit cells in the plurality of radioactive unit cells, and is electrically connected to the electrodes of the respective adjacent radioactive unit cells.

2. The radioactive battery as claimed in claim 1, wherein, The connector includes a first connector electrically connecting the first electrode of each of the adjacent radioactive unit cells and a second connector electrically connecting the second electrode of each of the adjacent radioactive unit cells.

3. The radioactive battery of claim 1, further comprising: An insulating layer is disposed in at least a portion of the gaps between any adjacent radioactive unit cells in the plurality of radioactive unit cells, wherein, The connector penetrates the insulating layer.

4. The radioactive battery as claimed in claim 1, wherein, In at least a portion of the plurality of radioactive cell units, the energy conversion layer surrounds at least a portion of the first electrode, the radiation source surrounds at least a portion of the energy conversion layer, and the second electrode surrounds at least a portion of the radiation source.

5. The radioactive battery as described in claim 4, wherein, The energy conversion layer comprises an N-type semiconductor and a P-type semiconductor, wherein the N-type semiconductor surrounds at least a portion of the P-type semiconductor, and the P-type semiconductor surrounds at least a portion of the first electrode.

6. The radioactive battery as claimed in claim 5, wherein, The radioactive cell also includes a hole transport layer disposed between the first electrode and the P-type semiconductor.

7. The radioactive battery as claimed in claim 1, wherein, In at least a portion of the plurality of radioactive cell elements, the energy conversion layer is in contact with at least a portion of the radioactive source.

8. The radioactive battery as claimed in claim 1, wherein, In at least a portion of the plurality of radioactive cell elements, at least one of the first electrode and the second electrode includes a through-hole extending along a first direction perpendicular to the upper surface of the electrode, and The connector includes a region disposed in at least a portion of the through hole.

9. The radioactive battery as claimed in claim 1, wherein, At least a portion of the plurality of radioactive unit cells further includes a dielectric layer surrounding at least a portion of the first electrode.

10. The radioactive battery of claim 1, further comprising: A shielding member that houses the plurality of radioactive cell cores and the connector.

11. The radioactive battery as claimed in claim 1, wherein, In at least a portion of the plurality of radioactive cell units, the radioactive source surrounds at least a portion of the first electrode, the energy conversion layer surrounds at least a portion of the radioactive source, and the second electrode surrounds at least a portion of the energy conversion layer.

12. The radioactive battery as claimed in claim 1, wherein, In at least a portion of the plurality of radioactive cell units, the energy conversion layer comprises a first energy conversion layer and a second energy conversion layer, the radioactive source surrounds at least a portion of the first energy conversion layer, and the second energy conversion layer surrounds at least a portion of the radioactive source.

13. A radioactive battery comprising: Multiple radioactive cell units, including: An electrode comprising a first electrode and a second electrode, an energy conversion layer disposed between the first electrode and the second electrode, and a radiation source disposed on at least one of the first electrode and the second electrode; as well as A connector is disposed in at least a portion of the gaps between any adjacent radioactive unit cells in the plurality of radioactive unit cells, and is electrically connected to the electrodes of the respective adjacent radioactive unit cells.

14. The radioactive battery as claimed in claim 13, wherein, In at least a portion of the plurality of radioactive cell elements, the radioactive source does not penetrate the first electrode or the second electrode along a first direction perpendicular to the upper surface of the electrode.

15. The radioactive battery as claimed in claim 13, wherein, In at least a portion of the plurality of radioactive cell elements, the energy conversion layer is in contact with at least a portion of the radioactive source, at least a portion of the first electrode, and at least a portion of the second electrode.

16. The radioactive battery of claim 15, wherein, In at least a portion of the plurality of radioactive cell units, the energy conversion layer comprises an N-type semiconductor and a P-type semiconductor, the N-type semiconductor surrounding at least a portion of the P-type semiconductor, and the P-type semiconductor surrounding at least a portion of the first electrode. The radiation source is disposed on the second electrode, but does not penetrate the second electrode in a first direction perpendicular to the upper surface of the electrode.

17. The radioactive battery of claim 13, wherein, In at least a portion of the plurality of radioactive cell elements, when viewed in a first direction perpendicular to the upper surface of the electrode, the radioactive source has an extended shape extending in a direction away from the energy conversion layer.

18. The radioactive battery of claim 17, wherein, The extended shape is one of a plurality of extended shapes, and When viewed in the first direction, the plurality of extended shapes do not overlap with each other.

19. The radioactive battery of claim 17, wherein, In at least a portion of the plurality of radioactive cell elements, the radioactive source includes a first radioactive source disposed on the first electrode and a second radioactive source disposed on the second electrode. Based on the radiation direction emanating outward from the center of the radioactive battery, the first and second radioactive sources do not overlap.

20. An electrical device comprising a radioactive battery and a load electrically connected to the radioactive battery via wires. in, The radioactive battery comprises: A plurality of radioactive cell elements, comprising: an electrode including a first electrode and a second electrode; a radioactive source disposed between the first electrode and the second electrode; and an energy conversion layer disposed between the first electrode and the second electrode, wherein the energy conversion layer does not overlap with the radioactive source when viewed in a first direction perpendicular to the upper surface of the electrode; and A connector is disposed in at least a portion of the gaps between any adjacent radioactive unit cells among the plurality of radioactive unit cells, and electrically connects to the electrodes of each of the adjacent radioactive unit cells. The connector includes a first connector electrically connecting the first electrode of each of the adjacent radioactive unit cells and a second connector electrically connecting the second electrode of each of the adjacent radioactive unit cells. The conductor includes a first conductor electrically connected to the first connector and a second conductor electrically connected to the second connector, and The load is configured to be electrically connected to the first conductor and the second conductor.

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