Evaporation source, method for coating at least two layers on a substrate, and OLED device

Abstract

A vapor deposition source for depositing at least two layers on a substrate is described, comprising: a first vapor distribution conduit having a row of first nozzles for depositing a first material onto the substrate; a second vapor distribution conduit having a row of second nozzles for depositing a second material onto the substrate; and a third vapor distribution conduit having a plurality of third nozzles for depositing a third material onto the substrate, wherein the row of first nozzles is configured to guide the first material onto a first region in a plane of the substrate, the row of second nozzles is configured to guide the second material onto a second region in the plane of the substrate that does not substantially overlap with the first region, and the plurality of third nozzles is configured to guide the third material onto a third region in the plane of the substrate that substantially covers both the first region and the second region.

Description

Technical Field

[0001] Embodiments of this disclosure relate to methods and apparatus for coating a substrate using a stack of layers. More specifically, embodiments of this disclosure relate to evaporation sources for depositing materials for an OLED layer stack on a substrate. The organic layers of the OLED layer stack can be deposited on the substrate. Embodiments of this disclosure specifically relate to evaporation sources and methods for manufacturing OLED displays by thermal evaporation. Embodiments of this disclosure relate to OLED devices. Embodiments of this disclosure specifically relate to a dual-emitting-layer OLED device. Background Technology

[0002] Organic light-emitting diodes (OLEDs) are light-emitting diodes in which the electroluminescent layer is a film of organic compound, emitting light in response to an electric current. Because OLEDs emit light directly without backlighting or color filters, OLED displays can achieve a wider color gamut and viewing angle than traditional LCD displays. Furthermore, OLEDs can be manufactured on flexible substrates, and therefore, they can be used in a variety of applications. OLEDs are used to manufacture television screens, computer monitors, mobile phones, and other handheld devices for displaying information. OLEDs can also be used for general spatial lighting. OLED displays may, for example, include layers of organic material deposited on a substrate between two electrodes to facilitate the formation of a matrix display panel with individually excitable pixels.

[0003] Organic materials are deposited onto a substrate in a vacuum processing chamber for OLED manufacturing. The material to be deposited is vaporized using a vapor deposition source, and the vaporized material is guided onto the substrate through a nozzle. Organic materials are typically vaporized in the vapor deposition source at temperatures between 250°C and 500°C. OLED performance can be improved by using a bilayer emitter layer consisting of two stacked co-deposited layers.

[0004] Organic vapor deposition equipment can be used to produce organic light-emitting diodes (OLEDs). Furthermore, other applications utilize vapor deposition equipment to deposit organic layers, for example, onto large-area substrates. OLED displays may, for example, include multiple layers of organic material located between two electrodes.

[0005] In view of the above, improved vapor deposition sources and device manufacturing methods suitable for OLED manufacturing would be beneficial. Summary of the Invention

[0006] In view of the foregoing, the independent claims provide a vapor deposition source, a method for depositing at least two layers on a substrate using the vapor deposition source, and an OLED display device. Further aspects, benefits, and features of this disclosure will be apparent from the claims, description, and drawings.

[0007] According to one aspect, a vapor deposition source is provided for depositing at least two layers on a substrate that moves relative to the vapor deposition source in a substrate plane. The vapor deposition source includes: a first vapor distribution conduit having a row of first nozzles for depositing a first material onto the substrate; a second vapor distribution conduit having a row of second nozzles for depositing a second material onto the substrate; and a third vapor distribution conduit having a plurality of third nozzles for depositing a third material onto the substrate, wherein the row of first nozzles is configured to guide the first material onto a first region in the substrate plane, the row of second nozzles is configured to guide the second material onto a second region in the substrate plane that does not substantially overlap with the first region, and the plurality of third nozzles is configured to guide the third material onto a third region in the substrate plane that substantially covers both the first and second regions.

[0008] Specifically, the first vapor distribution pipe, the second vapor distribution pipe, and the third vapor distribution pipe can be configured to deposit a first mixed material layer comprising a first material and a third material onto a substrate that is moved through a vapor deposition source, and to deposit a second mixed material layer comprising a second material and a third material onto top of the first mixed material layer.

[0009] In some embodiments, a plurality of third nozzles are provided as a single row of third nozzles arranged between a row of first nozzles and a row of second nozzles, the single row of third nozzles being configured to guide third material into a third region in the substrate plane that substantially covers both the first region and the second region.

[0010] In some embodiments, the vapor deposition source includes a shielding device configured to laterally restrict vapor plumes emitted from at least one of the first nozzle, second nozzle, and third nozzle. The shielding device may be arranged and shaped to reduce or prevent overlap between the first and second regions in the substrate plane and / or ensure that the third region overlaps or covers both the first and second regions in the substrate plane.

[0011] According to another aspect, a method is provided for depositing at least two layers on a substrate using a vapor deposition source. The vapor deposition source includes a first vapor distribution conduit having a row of first nozzles, a second vapor distribution conduit having a row of second nozzles, and a third vapor distribution conduit having a plurality of third nozzles. The method includes: transporting a substrate in a substrate plane through the vapor deposition source while guiding a first material from the first nozzles toward the substrate, guiding a second material from the second nozzles toward the substrate, and guiding a third material from the third nozzles toward the substrate; wherein the row of first nozzles guides the first material onto a first region in the substrate plane, the row of second nozzles guides the second material onto a second region in the substrate plane that does not substantially overlap with the first region, and the plurality of third nozzles guide the third material onto a third region in the substrate plane that substantially covers both the first and second regions, such that a first mixed material layer comprising the first material and the third material and a second mixed material layer comprising the second material and the third material are deposited stacked on top of each other on the substrate.

[0012] The first, second, and / or third materials may include or be composed of organic materials. The third material may be a dopant material. The first and / or second materials may be or include a host material.

[0013] According to another aspect, an OLED device is provided, particularly an OLED device manufactured according to any of the embodiments described herein. The OLED display device includes a substrate on which a plurality of pixels are formed. Each of the plurality of pixels includes an anode layer, a cathode layer, and a co-deposited bilayer emitter layer between the anode layer and the cathode layer, consisting of two stacked co-deposited layers. The bilayer emitter layer includes: a first mixed material layer comprising a first host material and a first dopant material; and a second mixed material layer directly on top of the first mixed material layer, comprising a second host material and a first dopant material.

[0014] The embodiments also relate to apparatus for carrying out the disclosed methods, and include apparatus portions for performing each described method aspect. These method aspects can be performed by hardware components, a computer programmed with suitable software, any combination of the two, or in any other manner. Furthermore, the embodiments relate to methods for operating the described apparatus. Methods for operating the described apparatus include method aspects for performing each function of the apparatus. The embodiments also relate to methods for manufacturing processed substrates, particularly coated substrates, in the vacuum deposition system described herein, and substrates manufactured according to these methods and / or using the systems described herein, such as OLED substrates, particularly OLED displays. Other devices besides OLED displays can also be manufactured using the apparatus and methods described herein. Attached Figure Description

[0015] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained by referring to the embodiments. The accompanying drawings relate to embodiments of this disclosure and are described below:

[0016] Figure 1 A schematic diagram of a vacuum deposition system with a vapor deposition source according to an embodiment is shown;

[0017] Figure 2 A schematic diagram of the vapor deposition source according to an embodiment is shown in a vertical cross-sectional plane;

[0018] Figure 3 A schematic diagram of the vapor deposition source according to an embodiment is shown in a horizontal cross-sectional plane;

[0019] Figure 4 A schematic diagram of the vapor deposition source according to an embodiment is shown in a horizontal cross-sectional plane;

[0020] Figure 5 A schematic diagram of the vapor deposition source according to an embodiment is shown in a horizontal cross-sectional plane;

[0021] Figure 6 A schematic diagram of the vapor deposition source according to an embodiment is shown in a horizontal cross-sectional plane;

[0022] Figure 7 A schematic diagram of the vapor deposition source according to an embodiment is shown in a horizontal cross-sectional plane; and

[0023] Figure 8 A schematic diagram of a layer deposited by a vapor deposition source according to an embodiment is shown in a vertical cross-sectional plane. Detailed Implementation

[0024] Reference will now be made in detail to various implementation examples, one or more examples of these embodiments are illustrated in each of the accompanying drawings. Each example is provided in an illustrative manner and is not intended to be limiting. For example, features shown or described as part of one embodiment may be used in or in combination with any other embodiment to produce further embodiments. This disclosure is intended to include such modifications and variations. In the following description of the drawings, the same element symbols refer to the same or similar parts. Generally, only differences relative to individual embodiments are described. Unless otherwise indicated, a description of a part or aspect in one embodiment may also be applied to a corresponding part or aspect in another embodiment.

[0025] Figure 1A schematic top view illustrates a vacuum deposition system 1000 having a vapor deposition source 101 according to an embodiment described herein. The vacuum deposition system 1000 includes a first vacuum chamber 1001 housing the vapor deposition source 101, and optionally includes one or more additional vacuum chambers housing one or more additional vapor deposition sources, such as a second vapor deposition source 102 and / or a third vapor deposition source 103. The vacuum deposition system 1000 may include at least five or at least ten vapor deposition sources for coating a substrate with multiple layers. The vapor deposition sources may be configured to coat a vertically or substantially vertically oriented substrate 10 transported on a substrate transport track 1013. Various materials may be successively deposited onto the substrate to provide layer stacks, particularly OLED layer stacks, on the substrate. These materials may include one or more inorganic materials, such as, for example, metals, and one or more organic materials. For example, the vacuum deposition system 1000 may include ten or more vapor deposition sources for coating a substrate with multiple layers.

[0026] In this disclosure, "vacuum deposition system" will be understood as a system or arrangement configured for vacuum deposition of material onto a substrate. "Vacuum chamber" or "vacuum processing chamber" will be understood as a chamber configured for vacuum deposition. As used herein, the term "vacuum" can be understood to mean a technical vacuum having a vacuum pressure of less than, for example, 10 mbar. Typically, the pressure in a vacuum chamber as described herein can be 10 mbar. -5 millibars and about 10 -8 Between millibars, especially at 10 -5 millibars and 10 -7 Between milligrams.

[0027] The vacuum deposition system 1000 may include a substrate transport track 1013 configured to move the substrate 10 along a substrate transport path T past a vapor deposition source 101 and optionally past another vapor deposition source. The substrate transport track 1013 may extend at least partially through a first vacuum chamber 1001 and optionally through another vacuum chamber, and may include a substrate transport system configured for substrate transport, such as a roller conveyor system, one or more linear motors, and / or a magnetic levitation system adapted to move the substrate relative to and past the vapor deposition source. During transport and / or deposition, the substrate may be carried by a substrate carrier 1020. The surface of the substrate, particularly the surface facing the vapor deposition source, and more particularly the surface facing the vapor deposition source 101, may be in the substrate plane 1010.

[0028] Therefore, an inline system is provided that allows multiple layers to be deposited sequentially on the substrate as it is moved through the vacuum deposition system 1000 and passes through multiple evaporation sources.

[0029] The embodiments described herein specifically relate to the deposition of materials, such as for display fabrication on large-area substrates. According to some embodiments, the large-area substrate or the carrier supporting one or more substrates may have a diameter of 0.5 m. 2 Or larger, especially 1m 2 Or even larger. For example, the deposition system can be adapted to process large-area substrates, such as GEN 4.5 substrates, which correspond to approximately 0.67m. 2 The substrate (0.73m × 0.92m); GEN 5, which corresponds to approximately 1.4m. 2 The substrate (1.1m × 1.3m); GEN6, which corresponds to approximately 2.7m. 2 (1.5m × 1.8m); GEN 7.5, which corresponds to approximately 4.29m. 2 The substrate (1.95m × 2.2m); GEN 8.5, which corresponds to approximately 5.7m. 2 The substrate (2.2m × 2.5m); or even GEN 10, which corresponds to approximately 8.7m. 2 The substrate (2.85m × 3.05m) can be used. Similarly, even larger generations (such as GEN 11 and GEN 12) and corresponding substrate areas can be achieved. According to another implementation, half the size of the aforementioned substrate generations can be processed. Alternatively or additionally, semiconductor wafers can be processed and coated using the deposition system according to this disclosure.

[0030] Figure 2 A vapor deposition source 101 according to an embodiment described herein is shown in a vertical cross-sectional plane. The vapor deposition source 101 may have a crucible 112 configured to vapor deposit the same or different source materials onto a substrate, and a vapor distribution conduit configured to guide the vapor-deposited source material toward the substrate through multiple nozzles. For example, a vapor distribution tube or conduit may provide a line source with multiple nozzles arranged in a row (or “line array”) along the longitudinal direction of the vapor distribution conduit. A row of nozzles may be arranged along the longitudinal direction of the vapor distribution conduit (typically a substantially vertical direction) to provide a substantially vertical line source. Each vapor distribution conduit may have multiple nozzles, such as a row of nozzles, particularly suitable for coating a substrate with a substantially vertical orientation, either a single nozzle row or multiple nozzle rows. Figure 2 Not shown in the text but Figure 4 and Figure 7 In some embodiments illustrated exemplary, at least one vapor distribution conduit has multiple rows of nozzles, particularly suitable for coating two vertical rows of nozzles having a substantially vertical orientation on a substrate. The multiple rows of nozzles may be parallel to each other. Each vapor distribution conduit is configured to coat the substrate using vapor-deposited source material (e.g., host material or dopant material) deposited in an associated vapor deposition crucible.

[0031] As used in this article, "generally vertical direction" refers to a direction that corresponds to the direction of gravity or deviates from the direction of gravity by less than 10°.

[0032] For example, the source material to be deposited can be an organic material used in the production of organic light-emitting diodes (OLEDs). The organic material can be a host material or a dopant material. The host material and the dopant material can form an emission layer, particularly a bilayer emission layer. The bilayer emission layer can include a first bilayer emission layer and a second bilayer emission layer. The first bilayer emission layer can form a recombination region, and the second bilayer emission layer can form a triplet-triplet fusion region of the bilayer emission layer. In the operation of the OLED, light is emitted. Light emission can include delayed emission in the triplet-triplet fusion region.

[0033] The host material may be anthracene derivative, benzonitrile derivative, acridine derivative, triazine derivative, fluorene derivative, thiophene derivative, and / or diphenylsilane derivative. The dopant material may be anthracene derivative, perylene derivative, carbazole derivative, fluorene derivative, triazine derivative, aniline derivative, styrene derivative, and / or oxygen-bridged boron derivative.

[0034] like Figure 2 As schematically depicted, the vapor deposition source 101 includes a first vapor distribution conduit 110. Further vapor distribution conduits for the vapor deposition source are not shown. Figure 2 In the vertical section view, but shown in, for example Figure 3 In a horizontal cross-sectional view, the first vapor distribution conduit 110 has a row of first nozzles 111, which can be arranged along the longitudinal direction of the first vapor distribution conduit 110, for example, arranged vertically in a substantially vertical linear array. The vapor deposition source 101 can be, for example, a line source for coating a substrate in a substantially vertical orientation. The vapor deposition source 101 can be configured to deposit at least three materials onto the substrate using three or more vapor distribution conduits arranged adjacent to each other.

[0035] A row of first nozzles 111 includes multiple nozzles, particularly twenty or more nozzles. Each nozzle has a main vapor deposition direction. The "main vapor deposition direction" of a nozzle can be understood as the direction defined by the nozzle opening and the nozzle channel of the nozzle (typically corresponding to the direction of the nozzle channel). The substantially conical vapor plume emitted from the nozzle is generally centered on the main vapor deposition direction of the nozzle, for example, where the maximum amount of vapor particles in the plume propagates along the main vapor deposition direction. Specifically, the vapor plume emitted from the nozzle is defined by the main vapor deposition direction and the opening angle of the plume. The vapor plume may be rotationally symmetrical with respect to the main vapor deposition direction, and / or the vapor plume may be shaped by a shaping device to be symmetrical or asymmetrical with respect to the main vapor deposition direction or with respect to the nozzle axis.

[0036] A row of first nozzles 111 provides a first main evaporation direction M1 relative to the substrate surface if the nozzle channels of the nozzles in this row are substantially parallel to each other and arranged vertically. Figure 2 The diagram schematically depicts a parallel vapor plume propagating along the first main vapor deposition direction M1. Therefore, a row of first nozzles 111 is characterized by the (common) main vapor deposition direction of the nozzles. Figure 2 The first row of nozzles 111 has a first main vapor deposition direction M1. The other rows of nozzles described herein are defined by a common main vapor deposition direction between the nozzles in the respective rows.

[0037] The vapor deposition source 101 may further include a rotary driver 113 for rotating the vapor deposition source 101 about a rotation axis R1. Additionally, a controller 114 may be provided for controlling the rotational movement of the vapor deposition source 101.

[0038] Figure 3A schematic diagram of the vapor deposition source 101 of the embodiment described herein is shown in horizontal cross-sectional plane. The vapor deposition source 101 includes a first vapor distribution conduit 110 having a row of first nozzles 111, a second vapor distribution conduit 120 having a row of second nozzles 121, and a third vapor distribution conduit 130 having a plurality of third nozzles 131, particularly a row of third nozzles 131. The first vapor distribution conduit 110 with the row of first nozzles 111 is configured to emit a first vapor plume 31 guided toward the substrate plane 1010, particularly onto a first region 21 of the substrate plane 1010. The second vapor distribution conduit 120 with the row of second nozzles 121 is configured to emit a second vapor plume 32 guided toward the substrate plane 1010, particularly onto a second region 22 of the substrate plane 1010. The third vapor distribution conduit 130 with the plurality of third nozzles 131 is configured to emit a third vapor plume 33 guided toward the substrate plane 1010, particularly onto a third region of the substrate plane 1010. A third region of the substrate plane 1010 substantially covers the first region 21 and the second region 22. Specifically, the third region may substantially include both the first and second regions in the substrate plane, but is not substantially larger than the combined first and second regions. Specifically, the third region of the substrate plane 1010 may substantially overlap with a deposition region defined as the region in the substrate plane composed of the first and second regions. The overlap area between the third region and the deposition region may be at least 80%, 90%, 95%, or 99% of the third region. The third region may not substantially extend beyond the deposition region. The first region 21 and the second region 22 may not substantially overlap, and in particular, may be substantially different from each other. Specifically, the overlap area between the first region 21 and the second region 22 may be less than 20%, 15%, 12%, 10%, 8%, 5%, 2%, or 1% of the first region 21. The overlapping area of ​​the first region 21 and the second region 22 may be less than 20%, 15%, 12%, 10%, 8%, 5%, 2% or 1% of the second region 22. The overlapping area of ​​the first region 21 and the second region 22 may be less than 20%, 15%, 12%, 10%, 8%, 5%, 2% or 1% of the total area of ​​the first region 21 and the second region 22.

[0039] like Figure 3As depicted, as the substrate moves along the substrate transport path T, a first mixing layer is formed in a first region 21 of the substrate plane 1010. This first mixing layer includes a first material emitted from a first vapor distribution pipe 110 and a third material emitted from a third vapor distribution pipe 130. A second mixing layer is formed in a second region 22. This second mixing layer includes a second material emitted from a second vapor distribution pipe 120 and a third material emitted from a third vapor distribution pipe 130.

[0040] The third material may be a doped material. The doped material may act as an emitter in the first and / or second mixed layers. The concentration of the third material in the first mixed layer may not exceed 20%, 18%, 15%, 12%, 11%, 10%, 9%, 8%, 7%, 6%, 5%, 2%, or 1%. The concentration of the third material in the second mixed layer may not exceed 20%, 18%, 15%, 12%, 11%, 10%, 9%, 8%, 7%, 6%, 5%, 2%, or 1%. The concentration of the third material in the first mixed layer may differ from the concentration of the third material in the second mixed layer.

[0041] The first vapor distribution pipe 110, the second vapor distribution pipe 120, and the third vapor distribution pipe 130 may be mounted on the source body 301 to rotate together with the source body 301 about a rotation axis R1. In some embodiments, the first vapor distribution pipe 110, the second vapor distribution pipe 120, and the third vapor distribution pipe 130 are mounted adjacent to each other to provide a front side 60 of the vapor deposition source 101, which includes a nozzle array and can be rotated to... Figure 3 The deposition locations shown in the example are guided toward the substrate for coating the substrate.

[0042] A third steam distribution conduit 130 may be arranged between the first steam distribution conduit 110 and the second steam distribution conduit 120. For example, the third steam distribution conduit 130 may be installed between the first steam distribution conduit 110 and the second steam distribution conduit 120, such that a plurality of third nozzles 131 can act as a central row of nozzles arranged between two rows of nozzles arranged in the first and second steam distribution conduits. The distance between the first nozzle 111 and the third nozzle 131 may be 30 cm or less, particularly 10 cm or less, to improve the overlap ratio between the first and third materials. The distance between the second nozzle 121 and the third nozzle 131 may be 30 cm or less, particularly 10 cm or less, to improve the overlap ratio between the second and third materials.

[0043] Each vapor distribution pipe may be in fluid communication with a corresponding vapor deposition crucible, i.e., may have a vapor path from the corresponding vapor deposition crucible configured to vapor deposit the corresponding source material. The vapor deposition crucible may be mounted at the vapor deposition source 101 so as to rotate together with the source body 301.

[0044] The front side 60 of the vapor deposition source used herein includes a first row, a second row, and a third row of nozzles arranged adjacent to each other. During material deposition onto the substrate, the front side 60 of the vapor deposition source typically faces the substrate. For example, the front side 60 of the vapor deposition source may be defined as extending along a connecting line along the geometric center of a vapor distribution conduit connecting the vapor deposition source in a horizontal cross-sectional plane.

[0045] A row of first nozzles 111 and a row of second nozzles 121 can be tilted, such that the steam plumes emitted from the first steam distribution pipe and the second steam distribution pipe overlap with the third steam plume emitted from the third steam distribution pipe, so as to form a first mixed material layer and a second mixed material layer on the substrate 10, respectively.

[0046] The embodiments described herein may include a shielding device having an idle shield 202 and an additional shaper shield 201 connected to, and particularly integrated with, the idle shield 202 to form a continuous shielding surface that partially surrounds the vapor deposition source 101. A rotary driver is configured to rotate the vapor deposition source relative to both the idle shield 202 and the shaper shield 201. In other words, instead of being mounted at the vapor deposition source to rotate with it, the shaper shield 201 is connected to the idle shield 202 to form a rotationally stationary portion of the shielding device relative to the vapor deposition source. The shaper shield 201 may include (at least) a first slit oriented substantially vertically. Figures 3 to 7 In the illustrated embodiment, the opening angle of the first vapor plume 31 is limited by an edge of the shaper shield 201, and the opening angle of the second vapor plume 32 is limited by another edge of the shaper shield 201. The shaper shield 201 may define the lateral edges of the first region 21 and / or the lateral edges of the second region 22, particularly by limiting the opening angles of the first vapor plume and / or the second vapor plume.

[0047] The third nozzle 131 may be arranged such that the vapor plume emitted by the third nozzle 131 at least substantially or completely overlaps with the vapor plumes emitted by the first and second nozzles in the plane of the substrate. In particular, the opening angle of the third vapor plume 33 may be wider in the lateral direction than the opening angle of the first vapor plume 31 and / or the opening angle of the second vapor plume 32. As used herein, the lateral direction is generally a horizontal direction parallel to the substrate transport direction T along which the substrate moves relative to and past the vapor deposition source.

[0048] The smaller opening angle of the first and / or second steam plumes compared to the third steam plume 33 can be ensured, for example, by a shielding device configured to laterally limit the first and / or second steam plumes, such as by... Figure 3The shaper shield 201 shown ensures that the opening angle of the first vapor plume 31 and / or the second vapor plume 32 in the lateral direction may be less than 90°, 75°, 60°, 50°, 40°, or 30°, particularly when considering shielding devices that can limit the opening angle of the first or second vapor plume, and / or may exceed 5°, 10°, 20°, or 25°. The opening angle of the third vapor plume in the lateral direction may be less than 100°, 90°, 75°, 60°, or 45°, and may exceed 5°, 10°, 20°, or 25°. The first vapor plume 31, the second vapor plume 32, and / or the third vapor plume 33 may optionally have different opening angles. The opening angle of the third vapor plume 33 in the lateral direction may be greater than the opening angles of the first and second vapor plumes.

[0049] According to the embodiments described herein, a vapor deposition source is configured to coat a substrate with at least two stacked layers by moving the substrate, particularly along a transport path T, through the vapor deposition source. These two layers are hybrid material layers, each containing at least one material, particularly a host material, and a common additional material, particularly a dopant material. Each hybrid material layer is co-deposited through at least two vapor distribution channels. Compact and space-saving vacuum deposition systems are available, and fewer vapor deposition sources are required to coat the substrate with two hybrid layers (e.g., a bilayer emitter layer), as exemplarily used in OLED layer stacks. The interval between depositing the first hybrid material layer and the second hybrid material layer can be shortened. Short intervals between the deposition of hybrid material layers reduce interface contamination between hybrid material layers, particularly between layers of a bilayer emitter layer. Interface contamination between hybrid material layers can be particularly due to outgassing from the vacuum deposition system. In a vacuum system, plastic portions of the vacuum system may release plasticizers, for example, dioctyl phthalate (DOP) or diisononyl phthalate. In some embodiments, fluorocarbon compounds from the grease, O-rings, and / or PTFE portions may contaminate the interface between the hybrid material layers. In some embodiments, silicone from the grease, O-rings, and / or adhesives may contaminate the interface between the hybrid material layers. According to the embodiments described herein, since the two hybrid material layers are deposited (co-)using a single vapor deposition source using a shared vapor distribution channel, the two hybrid material layers are deposited adjacent to each other. Therefore, contamination at the interface between the two hybrid material layers can be reduced, and a high-quality OLED display device can be provided.

[0050] Figure 4 Another embodiment of the vapor deposition source as described herein is shown. Figure 4In this configuration, the third steam distribution conduit 130 includes a plurality of third nozzles 131 provided as two adjacent rows of nozzles. A first row of third nozzles 132 and a second row of third nozzles 133 are arranged between a row of first nozzles 111 and a row of second nozzles 121. The first row of third nozzles 132 is configured to guide a third material onto a first portion of the third region that substantially overlaps or substantially superimposes with the first region 21. The second row of third nozzles 133 is configured to guide the third material onto a second portion of the third region that substantially overlaps or substantially superimposes with the second region 22. The first portion and the second portion of the third region may not substantially overlap.

[0051] According to some embodiments, the amount or flux of the third material deposited by the first row of third nozzles 132 may differ from the amount or flux of the third material deposited by the second row of third nozzles 133. Specifically, the concentration of the third material in the first mixing layer may differ from the concentration of the third material in the second mixing layer. For some materials, the predetermined concentration of the third material may differ between the first and second mixing layers. The opening angle of the first third vapor plume 34 of the first row of third nozzles 132 in the lateral direction may be similar to the opening angle of the first vapor plume 31. The opening angle of the second third vapor plume 35 of the second row of third nozzles 133 in the lateral direction may be similar to the opening angle of the second vapor plume 32.

[0052] In such Figure 5In some embodiments shown that can be combined with other embodiments described herein, the vapor deposition source 101 further includes a shaping device 203 configured to limit the opening angle of vapor plumes emitted by at least one of the first row of nozzles, the second row of nozzles, and the third row of nozzles. For example, the shaping device 203 may be arranged in front of a row of first nozzles and / or a row of second nozzles and may be configured to reduce or prevent overlap between vapor plumes emitted from the first nozzles and vapor plumes emitted from the second nozzles onto the substrate. Specifically, the shaping device may be arranged between a first vapor plume propagation space of the first vapor plume and a second vapor plume propagation space of the second vapor plume. The vapor plume propagation space can be understood as the space through which the vapor plume propagates after being emitted from the respective nozzle. Alternatively or additionally, the shaping device 203 may be arranged in front of a row of first nozzles and a plurality of third nozzles and may be configured to ensure that a third vapor plume emitted from the third nozzle 131 covers the first region 21 defined by the first vapor plume 31 in the substrate plane 1010. Alternatively or additionally, the shaping device 203 may be arranged in front of a row of second nozzles 121 and a plurality of third nozzles 131, and may be configured to ensure that a third vapor plume emitted by the third nozzles 131 covers a second region 22 in the substrate plane 1010 defined by the second vapor plume 32. In particular, the shaping device 203 and / or the shaping shield 201 may define a first region 21, a second region 22, and / or a third region in the substrate plane 1010 by laterally limiting the first vapor plume, the second vapor plume, and / or the third vapor plume emitted by the first vapor distribution conduit, the second vapor distribution conduit, and the third vapor distribution conduit.

[0053] The opening angle of the steam plume can be limited and / or shaped by a shaping device 203, which can be arranged in front of one or more rows of nozzles, such as... Figures 5 to 7 This is illustrated schematically. For example, one or more shaping devices 203 may be arranged upstream of the vapor distribution duct for shaping a vapor plume emitted from a first row of nozzles, for shaping a vapor plume emitted from a second row of nozzles, and / or for shaping a vapor plume emitted from a third nozzle. In some embodiments, the vapor plumes may be shaped to be asymmetrical with respect to the main vapor deposition direction of the respective row of nozzles. Figure 5 and Figure 6 In the middle, the shaping device limits the opening angle of the first steam plume 31, the second steam plume 32 and the third steam plume 33.

[0054] In some embodiments, the shaping device 203 may be mounted on the front side of one or more vapor distribution pipes so that it can rotate together with the vapor deposition source 101. For example, in Figures 5 to 7In the illustrated embodiment, a shaping device 203, protruding from the vapor distribution conduit to limit the opening angle of the steam plumes emitted from each row of nozzles, is mounted at the vapor deposition source 101. The shaping device 203 may include a shaping surface extending along the longitudinal direction of the vapor distribution conduit between adjacent rows of nozzles. The shaping device 203 may include a shaping surface with a bent structure, particularly for limiting the opening angle of the steam plumes from two adjacent rows. According to some embodiments, the shaping device 203 may limit the opening angle of the first steam plume 31 and / or the second steam plume 32 to a maximum angle, for example, 50°, or 40° or less. Optionally, the shaping device 203 may limit the maximum opening angle of the first steam plume 31 to a different maximum opening angle than the opening angle of the second steam plume 32.

[0055] In some embodiments, the vapor deposition source 101 may include an idle shield 202 that partially surrounds the vapor deposition source 101 at an angle of 90° or greater, or 120° or greater, wherein a rotary driver is configured to rotate the vapor deposition source 101 relative to the idle shield 202 to an idle position in which a first row of nozzles, a second row of nozzles, and a third row of nozzles are guided toward the idle shield 202.

[0056] In some embodiments, the shaping device 203 may include a second shielding plate 204 configured to shape the third vapor plume 33 such that the third region does not substantially cover the intermediate region between the first region 21 and the second region 22. The intermediate region may be, in particular, the region in the substrate plane 1010 between the first region 21 and the second region 22 or at the interface between the first region 21 and the second region.

[0057] exist Figure 6 In the illustrated embodiment, the second shielding plate 204 divides the third vapor plume 33 into two laterally spaced plume portions, wherein the central region in the substrate plane is not covered by either of the two plume portions of the third vapor plume. One portion of the third vapor plume 33 substantially overlaps with the first vapor plume 31 in the substrate plane 1010, particularly for forming a first mixing layer. Another portion of the third vapor plume 33 substantially overlaps with the second vapor plume 32 in the substrate plane 1010, particularly for forming a second mixing material layer. The area of ​​the third vapor plume covered by the second shielding plate 204 may correspond to an opening angle of at least 1°, 3°, 5° and at most 8°, 10°, 15° or 20°.

[0058] In some embodiments, the second shielding plate 204 is connected to the idle shielding member 202. Specifically, the second shielding plate 204 is non-rotatable, while the dispensing conduit may optionally be rotatable. In some embodiments, the shaping device 203 includes the second shielding plate 204. Specifically, rotation of the vapor deposition source 101 may cause the shaping device 203 with the second shielding plate 204 to rotate.

[0059] When no substrate is being transported past the vapor deposition source 101, the vapor deposition source 101 can be rotated to an idle position to avoid stray coating on, for example, the chamber surface. In the idle position, the first, second, and third materials can be guided toward the inner surface of the idle shield 202, which can act as a gate to block the vapor propagation path of the nozzle array. Optionally, the idle shield 202 can be at least partially cooled so that vapor material impacting the inner surface of the idle shield 202 condenses on and accumulates thereon without substantially reflecting.

[0060] In some embodiments that can be combined with other embodiments described herein, a row of first nozzles, a row of second nozzles, and a plurality of third nozzles each comprise twenty or more nozzles arranged vertically in a substantially vertical nozzle array, and the first vapor distribution conduit, the second vapor distribution conduit, and the third vapor distribution conduit may be configured as vertical sources arranged adjacent to each other on a common rotatable source body of the vapor deposition source. A third vapor distribution conduit 130 may be arranged between a second vapor distribution conduit 120 and a first vapor distribution conduit 110, and a row of third nozzles 131 may be arranged between a row of second nozzles 121 and a row of first nozzles 111.

[0061] Figure 7 This is a schematic diagram of the vapor deposition source 101 in a horizontal cross-section according to the embodiments described herein. The configuration of the vapor nozzles is similar to... Figure 4 The illustrated embodiment. Specifically, the third steam distribution conduit 130 includes a first row of third nozzles 132 and a second row of third nozzles 133. A shaping device 203, attachable to the third steam distribution conduit, can be positioned between the first row of third nozzles 132 and the second row of third nozzles 133. The shaping device 203 can protrude from the third steam distribution conduit 130. The shaping device 203 ensures that the steam plume from the first row of third nozzles 132 is separated from the steam plume from the second row of third nozzles 133.

[0062] Specifically, the shaping device 203 can limit the opening angle of the steam plume from the first row of third nozzles 132 and the second row of third nozzles 133. The opening angle of the steam plumes from the first row of third nozzles 132 and the second row of third nozzles 133 can be further limited by an additional shaping device, similar to... Figure 5 and Figure 6In some embodiments, these additional shaping devices protrude from the steam distribution conduit, particularly between a row of first nozzles 111 and a row of third nozzles 132 and / or between a row of second nozzles 121 and a row of third nozzles 133. Figure 7 In the first row of third nozzles 132 and the second row of third nozzles 133, the opening angle of the vapor plumes is limited by the second shielding plate 204. Specifically, the second shielding plate 204 shields the vapor plumes emitted by the first row of third nozzles 132 and the second row of third nozzles 133, such that the third region does not substantially cover the intermediate region between the first region and the second region in the substrate plane 1010.

[0063] For example, the vapor plume from the first row of third nozzles 132 substantially covers the first region 21 in the substrate plane, and the vapor plume from the second row of third nozzles 133 substantially covers the second region 22 in the substrate plane 1010. The shaping device 203 and the second shielding plate 204 prevent the vapor plumes from the first row of third nozzles 132 and the second row of third nozzles 133 from overlapping in the substrate plane 1010. Alternatively or additionally, the shaper shield 201, the shaping device 203, and / or the second shielding plate 204 may be configured to ensure that vapor plumes emitted from a row of first nozzles 111 and a row of first third nozzles 132 overlap in the substrate plane 1010 and / or ensure that vapor plumes emitted from a row of second nozzles 121 and a row of second third nozzles 133 overlap in the substrate plane 1010.

[0064] In some embodiments, the vapor deposition source 101 includes a shielding arrangement that partially surrounds the vapor deposition source 101 and includes an idle shield 202 and a shaper shield 201. A rotary driver is configured to rotate the vapor deposition source 101 relative to the shielding arrangement between an idle position and a deposition position. In the idle position, a first row of nozzles, a second row of nozzles, and a third row of nozzles are guided toward the idle shield 202. In the deposition position, at least one of the first row of nozzles, the second row of nozzles, and the third row of nozzles is aligned with one or more openings provided in the shaper shield 201. The one or more openings provided in the shaper shield 201 may be configured as one or more vertical slit openings.

[0065] In some embodiments, the height of the vapor deposition source 101 and the shielding arrangement is 150 cm or more, particularly 200 cm or more, and the inner shielding surface of the shielding arrangement guided toward the vapor deposition source can be 1 m. 2 Or larger, especially 2m 2 Or larger.

[0066] The idle shield 202 can surround the vapor deposition source in a cylindrical or tubular manner at an angle of 90° or greater and 270° or less, such that rotation of the vapor deposition source about the rotation axis R1 causes the nozzle array to move through the inner surface of the idle shield. The curvature of the idle shield can be adapted to the curvature of the movement trajectory of the nozzle array during source rotation.

[0067] exist Figure 8 The diagram illustrates a schematic layer structure deposited on a substrate 10. A first layer 11 and a second layer 12 are deposited on the substrate 10. The first layer 11 may be the first layer of a double-emitting layer, and the second layer 12 may be the second layer of a double-emitting layer, particularly the second layer of an OLED double-emitting layer structure. The substrate may include additional layers of the OLED layer stack, which may be deposited prior to the deposition of the double-emitting layer. Specifically, the substrate may include an anode layer and a cathode layer on opposite sides of the double-emitting layer. The OLED layer stack may, for example, include an anode layer, an optional hole injection layer (HIL), one or more organic layers (e.g., including a double-emitting layer), an optional electron injection layer (EIL), and / or a cathode layer. The second layer 12 is deposited directly on the first layer 11. Specifically, there may be no intermediate layer between the first layer 11 and the second layer 12.

[0068] The substrate 10 can be transported along a transport path, specifically passing through a first region and then a second region. The substrate, or a portion or region of the substrate, can be transported from the first region to the second region in a maximum of one second, 0.5s, 0.2s, or 0.1s. The short time interval between the deposition of the first layer 11 and the second layer 12 can improve the quality of the bilayer emitter layer and can particularly reduce the risk of contamination or the formation of an intermediate layer.

[0069] The first layer 11 may consist of a first mixed material layer comprising a co-deposited first material and a third material (and optionally additional materials). The second layer 12 may consist of a second mixed material layer comprising a co-deposited second material and a third material (and optionally additional materials). The first and second materials may comprise organic materials, particularly organic semiconductor materials. In some embodiments, the first and second materials may consist of organic materials, particularly organic semiconductor materials. The first and second materials may be host materials. The third material may be a dopant material. In particular, when incorporated into the first and / or second materials, the third material may be a material that acts as an emitter in the host material, particularly in the first and / or second materials. The dopant material may be an organic material.

[0070] According to some embodiments, the concentration of the third material in the first and / or second mixing layer may not exceed 15%, 12%, 10%, 8%, 5%, 2%, or 1%. The concentration of the third material in the first and second mixing layers may be substantially similar.

[0071] OLED devices, particularly OLED devices manufactured by the methods described herein, include a substrate and a plurality of pixels. Each pixel includes an anode layer and a cathode layer. For emitting light, the OLED device includes a double-layer emitting layer between the anode layer and the cathode layer, and particularly electrically connected to the anode layer and the cathode layer.

[0072] The bilayer emitter layer is co-deposited and comprises two stacked co-deposited layers. The co-deposited layers can be deposited, in particular, using a vapor deposition source as described herein and / or a method as described herein for depositing at least two layers. The co-deposited layers comprise a first mixed material layer and a second mixed material layer. The second mixed material layer is deposited directly on top of the first mixed material layer. In particular, there is no intermediate layer between the first and second mixed material layers. The co-deposited layers advantageously avoid interface contamination between the first and second mixed material layers, particularly ensuring that there are no contaminating molecules between the first and second mixed material layers. The co-deposited layers comprise two or more materials deposited substantially simultaneously, particularly using a vapor deposition source with several vapor distribution channels as described herein.

[0073] The first mixed material layer may include a first host material and a first dopant material, or be composed of the latter. The second mixed material layer may include a second host material and a first dopant material, or be composed of the latter. The concentration of contaminants in the bilayer emitter layer may remain substantially constant throughout the bilayer emitter layer. In particular, the variation in the contaminant concentration in the bilayer emitter layer may be less than 10%, 5%, 2%, or 1%. The variation in contaminant concentration may be a variation in the area or thickness of the bilayer emitter layer. In some embodiments, the interface between the first and second mixed material layers is contaminant-free.

[0074] According to some embodiments, the first and second mixed material layers are deposited one after another (for example, in less than 1 second) from the same vapor deposition source to provide a contaminant-free interface between the first and second mixed material layers.

[0075] The concentration of the first dopant material in the first mixed material layer and / or the second mixed material layer may not exceed 15%, particularly not exceeding 10%. The average concentration of the first dopant material in the first mixed layer may be 10% or less. The average concentration of the first dopant material in the second mixed material layer may be 10% or less.

[0076] In some embodiments, instead of a double-layer emitter layer, another stack of two co-deposited layers may be deposited on a substrate according to the methods and / or apparatus described herein. The two co-deposited layers comprise at least one material, particularly a dopant material, emitted from a shared vapor distribution channel of a vapor deposition source.

[0077] Specifically, the following embodiments are described herein:

[0078] Example 1: A vapor deposition source for depositing at least two layers on a substrate moving in a substrate plane relative to the vapor deposition source, comprising: a first vapor distribution conduit having a row of first nozzles for depositing a first material onto the substrate; a second vapor distribution conduit having a row of second nozzles for depositing a second material onto the substrate; and a third vapor distribution conduit having a plurality of third nozzles for depositing a third material onto the substrate, wherein the row of first nozzles is configured to guide the first material onto a first region in the substrate plane, the row of second nozzles is configured to guide the second material onto a second region in the substrate plane that does not substantially overlap with the first region, and the plurality of third nozzles is configured to guide the third material onto a third region in the substrate plane that substantially covers both the first region and the second region.

[0079] Example 2: The vapor deposition source as described in Example 1, wherein the first vapor distribution pipe, the second vapor distribution pipe and the third vapor distribution pipe are configured to deposit a first mixed material layer comprising the first material and the third material onto the substrate being moved through the vapor deposition source, and to deposit a second mixed material layer comprising the second material and the third material on top of the first mixed material layer.

[0080] Example 3: The vapor deposition source as described in any one of Examples 1 to 2, wherein the first region and the second region are substantially different from each other, and in particular, wherein the overlap area between the first region and the second region is less than 10% of the first region and less than 10% of the second region.

[0081] Example 4: A vapor deposition source as described in any one of Examples 1 to 3, wherein the third region substantially overlaps with the deposition region composed of the first region and the second region, and in particular, wherein the overlap area between the third region and the deposition region is 90% or more of the third region and 90% or more of the deposition region.

[0082] Example 5: A vapor deposition source as described in any one of Examples 1 to 4, wherein the first vapor distribution pipe is in fluid communication with a first host material crucible, the first host material crucible being configured to vapor deposit a first host material; the second vapor distribution pipe is in fluid communication with a second host material crucible, the second host material crucible being configured to vapor deposit a second host material; and the third vapor distribution pipe is in fluid communication with a dopant material crucible, the dopant material crucible being configured to vapor deposit a dopant material.

[0083] Example 6: A vapor deposition source as described in any one of Examples 1 to 5, wherein the plurality of third nozzles are provided as a single row of third nozzles arranged between the row of first nozzles and the row of second nozzles, the single row of third nozzles being configured to guide the third material onto the third region in the substrate plane that substantially covers both the first region and the second region.

[0084] Example 7: A vapor deposition source as described in any one of Examples 1 to 5, wherein the plurality of third nozzles includes a first row of third nozzles and a second row of third nozzles arranged between the first row of first nozzles and the second row of second nozzles, the first row of third nozzles being configured to guide the third material onto a first portion of the third region that substantially overlaps with the first region, and the second row of third nozzles being configured to guide the third material onto a second portion of the third region that substantially overlaps with the second region.

[0085] Example 8: The vapor deposition source as described in any one of Examples 1 to 7 further includes a shielding device configured to restrict the vapor plume emitted by at least one of the first nozzle, the second nozzle, and the third nozzle in the lateral direction.

[0086] Example 9: A vapor deposition source as described in Example 8, wherein the shielding device is configured to limit the vapor plumes emitted by the first nozzle and the second nozzle in the lateral direction to a maximum opening angle of 60° or less.

[0087] Example 10: A vapor deposition source as described in any one of Examples 8 to 9, wherein the shielding device is configured to laterally restrict a first vapor plume emitted from the first nozzle and a second vapor plume emitted from the second nozzle from substantially not overlapping each other in the substrate plane, and in particular, wherein the shielding device includes at least one first shielding plate arranged in front of at least one of the first vapor distribution pipe, the second vapor distribution pipe and the third vapor distribution pipe between the first vapor plume propagation space and the second vapor plume propagation space.

[0088] Example 11: A vapor deposition source as described in any one of Examples 8 to 10, wherein the shielding device includes at least one second shielding plate, the at least one second shielding plate being configured to shape a third vapor plume emitted from the plurality of third nozzles such that the third region does not substantially cover the intermediate region between the first region and the second region in the substrate plane.

[0089] Example 12: A vapor deposition source as described in any one of Examples 1 to 11, wherein the first material and the second material comprise organic materials, particularly organic semiconductor materials.

[0090] Example 13: A vapor deposition source as described in any one of Examples 1 to 12, wherein the first vapor distribution pipe, the second vapor distribution pipe and the third vapor distribution pipe are mounted on a source body that can rotate about a rotation axis.

[0091] Example 14: The vapor deposition source as described in Example 13 further includes a shielding arrangement that partially surrounds the source body and includes an idle shield and a shaper shield. The source body is rotatable relative to the shielding arrangement between an idle position and a deposition position. In the idle position, the first nozzle, the second nozzle, and the third nozzle are guided toward the idle shield. In the deposition position, at least one of the first nozzle, the second nozzle, and the third nozzle is aligned with one or more slits in the shaper shield, the one or more slits being configured to laterally restrict a vapor plume emitted by at least one of the first nozzle, the second nozzle, and the third nozzle.

[0092] Example 15: A method for depositing at least two layers on a substrate using a vapor deposition source comprising a first vapor distribution conduit having a row of first nozzles, a second vapor distribution conduit having a row of second nozzles, and a third vapor distribution conduit having a plurality of third nozzles, the method comprising: transporting the substrate in a substrate plane through the vapor deposition source while guiding a first material from the first nozzles toward the substrate, guiding a second material from the second nozzles toward the substrate, and guiding a third material from the third nozzles toward the substrate; wherein the row of first nozzles guides the first material onto a first region in the substrate plane, the row of second nozzles guides the second material onto a second region in the substrate plane that does not substantially overlap with the first region, and the plurality of third nozzles guide the third material onto a third region in the substrate plane that substantially covers both the first region and the second region, such that a first mixed material layer comprising the first material and the third material and a second mixed material layer comprising the second material and the third material are deposited stacked on the substrate.

[0093] Example 16: The method as described in Example 15, wherein the first region and the second region are defined by a shielding device that restricts a first vapor plume emitted from the first nozzle and a second vapor plume emitted from the second nozzle in a lateral direction.

[0094] Example 17: The method as described in any one of Examples 15 to 16, wherein the first material, the second material and the third material are organic materials.

[0095] Example 18: The method of any one of Examples 15 to 17, wherein the first mixed material layer is a first double-layer emission layer of an organic light-emitting diode (OLED), and the second mixed material layer is a second double-layer emission layer of the OLED, and wherein the third material is a dopant material.

[0096] Example 19: The method of any one of Examples 15 to 18, wherein the substrate is transported from the first region to the second region in at most 1 second.

[0097] Example 20: The method as described in any one of Examples 15 to 19, wherein the concentration of the third material in the first mixed material layer and the second mixed material layer does not exceed 15%.

[0098] Example 21: An OLED display device, particularly an OLED display device manufactured by the method of any one of Examples 15 to 20, includes: a substrate; a plurality of pixels, each including: an anode layer, a cathode layer, and a co-evaporated double-layer emission layer between the anode layer and the cathode layer, wherein the double-layer emission layer includes: a first mixed material layer including a first host material and a first dopant material; and a second mixed material layer, directly on top of the first mixed material layer, including a second host material and the first dopant material.

[0099] Example 22: The OLED display device as described in Example 21, wherein the first mixed material layer is composed of the first host material and the first dopant material; and the second mixed material layer is composed of the second host material and the first dopant material.

[0100] Example 23: An OLED display device as described in any one of Examples 21 to 22, wherein the concentration of contaminants remains substantially constant throughout the entire double-layer emitting layer, and in particular, the interface between the first mixed material layer and the second mixed material layer is free of contaminants.

[0101] Example 24: An OLED display device as described in any one of Examples 21 to 23, wherein the first mixed material layer and the second mixed material layer are deposited one after another in close proximity from the same evaporation source to provide a contaminant-free interface between the first mixed material layer and the second mixed material layer.

[0102] Example 25: An OLED display device as described in any one of Examples 21 to 23, wherein the concentration of the first dopant material in the first mixed material layer and / or the second mixed material layer does not exceed 15%, particularly not more than 10%.

[0103] Example 26: An OLED display device as described in any one of Examples 21 to 25, wherein the average concentration of the first dopant material in the first mixed layer is 10% or less, and the average concentration of the first dopant material in the second mixed material layer is 10% or less.

[0104] Example 27: An OLED display device as described in any one of Examples 21 to 26, wherein at least one of the first host material and the second host material includes at least one of anthracene derivative, benzonitrile derivative, acridine derivative, triazine derivative, fluorene derivative, thiophene derivative and diphenylsilane derivative.

[0105] Example 28: An OLED display device as described in any one of Examples 21 to 27, wherein the first dopant material includes at least one of anthracene derivative, perylene derivative, carbazole derivative, fluorene derivative, triazine derivative, aniline derivative, styrene derivative, and boron oxy-bridged derivative.

[0106] Therefore, in view of the embodiments described herein, improved evaporation sources and improved deposition methods are provided, particularly for the deposition of OLED bilayer emitter layers. Improved OLED devices are provided, particularly OLED devices manufactured according to the improved deposition methods described herein. The embodiments described herein provide improved quality and integrate the deposition process into a single evaporation source.

[0107] While the foregoing describes embodiments of this disclosure, other and further embodiments of this disclosure may be conceived without departing from the basic scope of this disclosure, and the scope of this disclosure is defined by the appended claims.

[0108] In particular, this written description uses examples to disclose the contents of this disclosure, including best practices, and also enables any person skilled in the art to practice the described subject matter, including making and using any apparatus or system and performing any incorporated methods. While various specific embodiments have been disclosed for the foregoing, the non-mutually exclusive features of the embodiments described above can be combined with each other. The patentable scope is defined by the claims, and other examples are intended to be included within the scope of the claims if the claims have structural elements that are not different from the literal language of the claims, or if the claims include equivalent structural elements that are not substantially different from the literal language of the claims.

Claims

1. A vapor deposition source for depositing at least two layers on a substrate that moves relative to the vapor deposition source in a substrate plane, comprising: A first vapor distribution conduit has a row of first nozzles for depositing a first material onto the substrate; The second vapor distribution conduit has a row of second nozzles for depositing a second material onto the substrate; and a third vapor distribution conduit having multiple third nozzles for depositing a third material onto the substrate, wherein The row of first nozzles is configured to guide the first material onto a first region in the plane of the substrate. The row of second nozzles is configured to guide the second material into a second region in the substrate plane that does not substantially overlap with the first region. The plurality of third nozzles are configured to guide the third material into a third region in the substrate plane that substantially covers both the first region and the second region.

2. The vapor deposition source of claim 1, wherein the first vapor distribution conduit, the second vapor distribution conduit, and the third vapor distribution conduit are configured to deposit a first mixed material layer comprising the first material and the third material onto the substrate being moved through the vapor deposition source, and to deposit a second mixed material layer comprising the second material and the third material on top of the first mixed material layer.

3. The vapor deposition source as claimed in claim 1, wherein the first region and the second region are substantially different from each other, and in particular, wherein the overlap area between the first region and the second region is less than 10% of the first region and less than 10% of the second region.

4. The vapor deposition source of claim 1, wherein the third region substantially overlaps with the deposition region consisting of the first region and the second region, and in particular, wherein the overlap area between the third region and the deposition region is 90% or more of the third region and 90% or more of the deposition region.

5. The vapor deposition source as described in any one of claims 1, wherein - The first vapor distribution pipe is in fluid communication with the first host material crucible, which is configured to vapor deposit the first host material; - The second vapor distribution conduit is in fluid communication with the second host material crucible, which is configured to vapor deposit the second host material; and - The third vapor distribution pipe is in fluid communication with the dopant material crucible, which is configured to vapor-deposit dopant material.

6. The vapor deposition source of claim 1, wherein the plurality of third nozzles are provided as a single row of third nozzles arranged between the row of first nozzles and the row of second nozzles, the single row of third nozzles being configured to guide the third material onto the third region in the substrate plane that substantially covers both the first region and the second region.

7. The vapor deposition source of claim 1, wherein the plurality of third nozzles includes a first row of third nozzles and a second row of third nozzles disposed between the row of first nozzles and the row of second nozzles, the first row of third nozzles being configured to guide the third material onto a first portion of the third region that substantially overlaps with the first region, and the second row of third nozzles being configured to guide the third material onto a second portion of the third region that substantially overlaps with the second region.

8. The vapor deposition source of claim 1, further comprising a shielding device configured to restrict, in a lateral direction, a vapor plume emitted by at least one of the first nozzle, the second nozzle, and the third nozzle.

9. The vapor deposition source of claim 8, wherein the shielding device is configured to limit the vapor plumes emitted by the first nozzle and the second nozzle to a maximum opening angle of 60° or less in the lateral direction.

10. The vapor deposition source of claim 8, wherein the shielding device is configured to laterally restrict the first vapor plume emitted from the first nozzle and the second vapor plume emitted from the second nozzle from substantially not overlapping each other in the substrate plane, and in particular wherein the shielding device includes at least one first shielding plate disposed in front of at least one of the first vapor distribution pipe, the second vapor distribution pipe and the third vapor distribution pipe between the first vapor plume propagation space and the second vapor plume propagation space.

11. The vapor deposition source of claim 8, wherein the shielding device includes at least one second shielding plate, the at least one second shielding plate being configured to shape a third vapor plume emitted from the plurality of third nozzles such that the third region does not substantially cover the intermediate region between the first region and the second region in the plane of the substrate.

12. The vapor deposition source of claim 1, wherein the first material and the second material comprise organic materials, particularly organic semiconductor materials.

13. The vapor deposition source of claim 1, wherein the first vapor distribution pipe, the second vapor distribution pipe and the third vapor distribution pipe are mounted on a source body rotatable about a rotation axis.

14. The vapor deposition source of claim 13, further comprising a shielding arrangement partially surrounding the source body and including an idle shield and a shaper shield, the source body being rotatable relative to the shielding arrangement between an idle position and a deposition position, wherein in the idle position the first nozzle, the second nozzle, and the third nozzle are directed toward the idle shield, and in the deposition position at least one of the first nozzle, the second nozzle, and the third nozzle is aligned with one or more slits in the shaper shield, the one or more slits being configured to laterally restrict a vapor plume emitted by at least one of the first nozzle, the second nozzle, and the third nozzle.

15. A method for depositing at least two layers on a substrate using a vapor deposition source comprising a first vapor distribution conduit having a first row of first nozzles, a second vapor distribution conduit having a second row of second nozzles, and a third vapor distribution conduit having a plurality of third nozzles, the method comprising: The substrate is transported in the substrate plane through the vapor deposition source, while a first material is guided from the first nozzle toward the substrate, a second material is guided from the second nozzle toward the substrate, and a third material is guided from the third nozzle toward the substrate. The row of first nozzles guides the first material onto a first region in the plane of the substrate. The row of second nozzles guides the second material to a second region in the substrate plane that does not substantially overlap with the first region, and The plurality of third nozzles guide the third material into a third region in the substrate plane that substantially covers both the first region and the second region. A first mixed material layer comprising the first material and the third material and a second mixed material layer comprising the second material and the third material are stacked and deposited on the substrate.

16. The method of claim 15, wherein the first region and the second region are defined by a shielding device that laterally restricts a first vapor plume emitted from the first nozzle and a second vapor plume emitted from the second nozzle.

17. The method of any one of claims 15, wherein the first material, the second material and the third material are organic materials.

18. The method of any one of claims 15, wherein the first mixed material layer is a first double-layer emitting layer of an organic light-emitting diode (OLED), and the second mixed material layer is a second double-layer emitting layer of the OLED, and wherein the third material is a dopant material.

19. The method of any one of claims 15, wherein the substrate is transported from the first region to the second region in at most 1 second.

20. The method of any one of claims 15, wherein the concentration of the third material in the first mixed material layer and the second mixed material layer does not exceed 15%.

21. An OLED display device, comprising: substrate; Multiple pixels, including: An anode layer, a cathode layer, and a co-evaporated bilayer emission layer comprising two stacked co-evaporated layers between the anode layer and the cathode layer, wherein the bilayer emission layer comprises: The first hybrid material layer includes a first host material and a first dopant material; The second hybrid material layer, directly on top of the first hybrid material layer, includes the second host material and the first dopant material.

22. The OLED display device of claim 21, wherein... The first hybrid material layer comprises the first host material and the first dopant material; and The second hybrid material layer comprises the second host material and the first dopant material.

23. The OLED display device of claim 21, wherein the concentration of contaminants remains substantially constant throughout the bilayer emitting layer, and in particular, the interface between the first hybrid material layer and the second hybrid material layer is free of contaminants.

24. The OLED display device of claim 21, wherein the first mixed material layer and the second mixed material layer are deposited one after another, stacked closely together, from the same evaporation source to provide a contaminant-free interface between the first mixed material layer and the second mixed material layer.

25. The OLED display device of claim 21, wherein the concentration of the first dopant material in the first mixed material layer and / or the second mixed material layer does not exceed 15%, particularly not more than 10%.

26. The OLED display device of claim 21, wherein the average concentration of the first dopant material in the first mixed layer is 10% or less, and the average concentration of the first dopant material in the second mixed material layer is 10% or less.

27. The OLED display device of claim 21, wherein at least one of the first host material and the second host material comprises at least one of anthracene derivative, benzonitrile derivative, acridine derivative, triazine derivative, fluorene derivative, thiophene derivative and diphenylsilane derivative.

28. The OLED display device of claim 21, wherein the first dopant material comprises at least one selected from anthracene derivative, perylene derivative, carbazole derivative, fluorene derivative, triazine derivative, aniline derivative, styrene derivative, and boron oxide derivative.

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