A method for etching the surface of a ceramic material based on ion beam technology

Abstract

The application discloses a ceramic material surface etching method based on ion beam technology and relates to the technical field of ceramic material surface treatment. The low-energy high-charge-state heavy ion is used to transfer charges above the near surface of the ceramic material, instantaneously deposit potential energy carried in a small volume to the ceramic material surface, cause Coulomb explosion and ion sputtering, etch the ceramic material surface, and will not introduce additional damage and impurities to the underlying matrix material. The kind, energy, charge state, incident angle and dose of the ion are adjusted, the multi-dimensional performance characteristics of the ion are synchronously adjusted, the depth of the material etching pit is accurately controlled, the roughness is small, impurities are avoided, and the etching quality and quality of the etching area are improved.

Description

Technical Field

[0001] This invention relates to the field of ceramic material surface treatment technology, and in particular to a method for etching ceramic material surfaces based on ion beam technology. Background Technology

[0002] Ceramic materials, with their high melting point, high hardness, excellent chemical stability, wear resistance, and diverse optoelectronic properties, have carried the progress of human civilization, bringing us into the convenient and fast information age. They are the cornerstone materials of the modern electronic information age. From our mobile phones, computers, and cars to spacecraft exploring the universe, all contain a large number of ceramic components (filters, capacitors, sensors, heat sinks, signal receivers and transmitters, etc.). For ceramic components to connect with other parts or adjust their optoelectronic properties, surface etching is an essential and crucial step. Because ceramic materials have strong chemical bonds between atoms...

[0003] Traditional etching methods mainly include inductively coupled plasma etching, reactive ion beam etching, and focused ion beam etching. These etching methods all rely on the kinetic energy of ions to elastically collide with the atoms on the surface of ceramic materials, knocking the ceramic material atoms away from the surface. The kinetic energy of ions is greater than the potential energy of atoms in the material lattice, and the control precision of ion kinetic energy is not high. It is easy to etch too deeply or create a frame, which can damage the non-etched areas of the substrate material, form defects or amorphous layers, and even introduce other impurity atoms, reducing its optical, electrical and thermal properties. Summary of the Invention

[0004] The purpose of this invention is to address the problem that existing etching methods for ceramic materials rely on the collision of ion kinetic energy with atoms on the material surface, which can easily lead to etching beyond the boundaries and causing damage, defects, or amorphous layers in the non-etched areas of the substrate material. This invention provides a method for etching the surface of ceramic materials based on ion beam technology.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0006] A method for etching the surface of ceramic materials based on ion beam technology includes the following steps:

[0007] S1. Clean the ceramic material substrate and the metal mask; the surface of the ceramic material substrate includes etched areas and non-etched areas; the metal mask is provided with etch holes that match the etched areas;

[0008] S2. Fix the dried metal mask onto the cleaned ceramic material substrate, and then cover the etched area of ​​the cleaned ceramic material substrate with the perforated metal mask to form a sample to be irradiated.

[0009] S3. Place the sample to be irradiated in the target chamber, and set or adjust the ion type, ion kinetic energy, charge state q+, dose, and incident angle of the ion beam; the ion type is an inert gas ion; the ion kinetic energy is 300keV~990keV, and the charge state q+ is at least greater than 11;

[0010] S4. Irradiate the etched area of ​​the sample to be irradiated with the ion beam to obtain the etched ceramic material product.

[0011] The ceramic material surface etching method based on ion beam technology described in this invention uses inert gas heavy ions as the ion beam type, combined with a suitable low-energy ion kinetic energy of 300keV~990keV, and sets the charge state q of the ion beam to be at least greater than 11 as a high-charge state ion. This allows for the irradiation of the etched area of ​​the ceramic material with a low-energy, high-charge state heavy ion beam. Compared to the traditional method that relies on ion kinetic energy to bombard the material surface atoms, the low-energy, high-charge state heavy ions of this invention carry a larger charge energy. The charge neutralization effect of these ions releases a huge potential energy in the etched area and deposits it on the material surface of the etched area. It can be instantly deposited on the surface of ceramic materials in a very small volume, triggering Coulomb explosion and ion sputtering. This causes the atoms on the material surface to undergo the Coulomb explosion effect, forming etch pits. The low-energy, high-charge heavy ions interact with the surface of the etched area, and their low kinetic energy makes it difficult for them to penetrate into the interior of the material and cause lattice damage. This reduces the damage and defects of the ceramic material surface etching and improves the etching quality. Furthermore, by adjusting the type, energy, charge state, incident angle, and dosage of ions, the multi-dimensional performance characteristics of the ions can be adjusted simultaneously, allowing for more precise control of the depth of the etch pits. This also results in lower roughness, avoids the introduction of impurities, and improves the etching quality and grade of the etched area.

[0012] Preferably, in the ceramic material surface etching method based on ion beam technology of the present invention, the ion type is Ar ion. q+ , ion Kr q+ ions Xe q+ One of them, q+ represents the charge state of the corresponding ion.

[0013] As a preferred embodiment of the present invention, by employing Ar q+ 、 Kr q+ 、 Xe q+ While avoiding the introduction of impurities, the method aims to achieve a high degree of matching for heavy ions, thereby further improving the controllable precision of etching depth.

[0014] Preferably, in the ceramic material surface etching method based on ion beam technology described in this invention, the ion Ar... q+ The charge state q+ ≥ 11; the ion Kr q+The charge state q+ ≥ 15; the ion Xe q+ The charge state q+ ≥ 20.

[0015] As a preferred embodiment of the present invention, by setting a specific charge state that matches the type of ion, it is beneficial to more accurately control the uniformity of the ion beam spot or the energy and charge state stability of the ion beam, thereby further reducing the etching roughness.

[0016] Preferably, in the ceramic material surface etching method based on ion beam technology described in this invention, the dose of the ion beam is set to 1 x 10⁻⁶. 14 ions / cm 2 ~1x10 17 ions / cm 2 .

[0017] As a preferred embodiment of the present invention, the etching depth and roughness are adjusted by setting the dosage, thereby further precisely adjusting the depth of the pits on the surface of the ceramic material and further improving the etching quality.

[0018] Preferably, in the ceramic material surface etching method based on ion beam technology of the present invention, the incident angle of the ion beam is set to one of 0°, 15°, 30°, 45°, 60°, and 75°.

[0019] As a preferred embodiment of the present invention, by setting a specific incident angle for the ion incident angle, the incident angle and the etching depth are better matched, thereby meeting the requirements of the etching depth and further reducing the roughness.

[0020] Preferably, in the ceramic material surface etching method based on ion beam technology of the present invention, the metal mask is one or more of Al foil, Ni foil, Ta foil, and TiW foil.

[0021] As a preferred embodiment of the present invention, by specifically setting the type of metal mask, the protection effect on the non-etched area can be further improved.

[0022] Preferably, in the ceramic material surface etching method based on ion beam technology of the present invention, the aperture of the etched hole is 10nm~5mm.

[0023] As a preferred embodiment of the present invention, by setting the etching holes to match the selection of the etching area, the width of the etching pits can be controlled more precisely, etching damage can be reduced, and etching quality can be further improved.

[0024] Preferably, in the ceramic material surface etching method based on ion beam technology of the present invention, the ceramic material matrix is ​​one of oxides, carbides, nitrides, and fluorides.

[0025] As a preferred embodiment of the present invention, it is applicable to etching treatment of ceramic material surfaces, and is a micro-nano etching process for ceramic materials with high melting point, corrosion resistance, and poor toughness.

[0026] In summary, due to the adoption of the above technical solution, the beneficial effects of the present invention are:

[0027] By using low-energy, high-charge heavy ions carrying a large charge energy, the charge neutralization of these ions releases enormous potential energy in the etching zone and deposits on the surface of the material. This causes a Coulomb explosion effect on the material surface, forming etching pits. The low-energy, high-charge heavy ions interact with the surface of the etching zone material, but their kinetic energy is relatively low, making it difficult for them to penetrate into the material's interior and cause lattice damage. This reduces the damage and defects in the etching of ceramic materials, improving etching quality. Furthermore, by adjusting the type, energy, charge state, incident angle, and dosage of ions, the multi-dimensional performance characteristics of the ions can be adjusted simultaneously, allowing for more precise control of the depth of the etching pits. This also results in lower roughness, avoids the introduction of impurities, and improves the etching quality and grade of the etching zone. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the etching process of the sample to be irradiated according to the present invention;

[0029] Figure 2 This is a schematic diagram of the structure of the ceramic material matrix after etching according to the present invention;

[0030] Figure 3 This is a morphological diagram of the ceramic material etching product of Embodiment 2 of the present invention;

[0031] Figure 4 This is a statistical diagram of the etching depth of the ceramic material etched product in Embodiment 2 of the present invention;

[0032] Figure 5 This is a morphological diagram of the ceramic material etching product of Embodiment 3 of the present invention;

[0033] Figure 6 This is a statistical diagram of the etching depth of the ceramic material etching product in Embodiment 3 of the present invention;

[0034] Figure 7 This is a morphological diagram of the etched ceramic material product of Embodiment 4 of the present invention;

[0035] Figure 8 This is a statistical diagram of the etching depth of the ceramic material etched product in Embodiment 4 of the present invention;

[0036] Figure 9 This is a morphological diagram of the ceramic material etching product of Embodiment 5 of the present invention;

[0037] Figure 10This is a schematic diagram showing the etching depth of the ceramic material etching product in Embodiment 5 of the present invention;

[0038] Figure 11 This is a morphological diagram of the etched ceramic material product of Embodiment 6 of the present invention;

[0039] Figure 12 This is a schematic diagram showing the etching depth of the ceramic material etching product in Embodiment 6 of the present invention;

[0040] Figure 13 This is a topographic image of the ceramic material etching product of Embodiment 7 of the present invention;

[0041] Figure 14 This is a statistical diagram of the etching depth of the ceramic material etched product in Embodiment 7 of the present invention;

[0042] Figure 15 This is a morphological diagram of the etched ceramic material product of Embodiment 8 of the present invention;

[0043] Figure 16 This is a statistical diagram of the etching depth of the ceramic material etched product in Embodiment 8 of the present invention;

[0044] Figure 17 This is a morphological diagram of the etched ceramic material product of Embodiment 9 of the present invention;

[0045] Figure 18 This is a statistical diagram of the etching depth of the ceramic material etched product in Embodiment 9 of the present invention;

[0046] icon:

[0047] 1. Ceramic material substrate; 2. Metal mask; 21. Etched holes; 3. Ion beam; 4. Etching pits. Detailed Implementation

[0048] The present invention will now be described in detail with reference to the accompanying drawings.

[0049] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0050] Example 1:

[0051] refer to Figures 1 to 18 As shown in this embodiment, a method for etching the surface of ceramic materials based on ion beam technology is disclosed, including the following steps:

[0052] S1. Clean the ceramic material substrate 1 and the metal mask 2; the surface of the ceramic material substrate 1 includes etched areas and non-etched areas; the metal mask is provided with etch holes 21 that match the etched areas; for example, put the ceramic material sample to be etched and the metal mask 2 into alcohol and clean them with ultrasonic waves.

[0053] S2. Fix the dried metal mask 2 onto the cleaned ceramic material substrate 1, and then cover the etched area of ​​the cleaned ceramic material substrate 1 with the perforated metal mask 2 to form a sample to be irradiated; for example, take out the ceramic material sample and the metal mask 2 from the alcohol, place them on filter paper with the surface facing up, let them air dry naturally, and fix the metal mask 2 on the surface of the ceramic sample to distinguish the etched area from the non-etched area.

[0054] S3. Place the sample to be irradiated in the target chamber, and set or adjust the ion type, ion kinetic energy, charge state q+, dose, and incident angle of the ion beam 3; the ion type is an inert gas heavy ion; the ion kinetic energy is 300keV~990keV, and the charge state q+ is at least greater than 11; for example, the depth and roughness of the pit 4 can be adjusted by controlling the type, kinetic energy, charge state, dose, and incident angle of the low-energy, high-charge-state heavy ions; the shape, size, and distribution of the pit 4 on the surface of the ceramic sample can be adjusted by changing the shape, size, and distribution of the holes in the metal mask 2.

[0055] S4. Irradiate the etched area of ​​the sample to be irradiated with the ion beam 3 to obtain the etched ceramic material. (Reference) Figure 2 As shown, for example, a ceramic sample with a mask is placed in a vacuum target chamber and irradiated with low-energy, high-charge heavy ions, forming etch pits 4 on the surface of the ceramic sample that are not covered by the mask. After irradiation, the ceramic sample is removed from the vacuum target chamber, the metal mask on the surface is removed, and the etched ceramic material is obtained.

[0056] It should be noted that the suitable low-energy ion beam 3 described in this invention is understood as an ion beam 3 for etching with an ion kinetic energy of 300keV~990keV. By adjusting the accelerating voltage, setting the voltage value of the main accelerating power supply, and adjusting the bias voltage or lens voltage to fine-tune the final energy of the ion beam 3, the energy of the ion beam 3 can be stabilized in the range of 300~990keV.

[0057] The etching hole 21 described in this invention is understood to be a hole with a substantially equal shape and size for each etch pit 4 to be etched in the etching area.

[0058] The type of ion described in this invention can be reasonably selected according to the depth requirements of the etch pit 4, without specific limitations. In this embodiment, the preferred type of ion is Ar ion. q+ , ion Kr q+ ions Xe q+One of them, q+ represents the charge state of the corresponding ion.

[0059] The charge state q+ of the ions described in this invention is at least greater than 11, and can be reasonably selected according to ion type matching or etching requirements, without specific limitations. In this embodiment, the preferred ion is Ar. q+ The charge state q+ ≥ 11; the ion Kr q+ The charge state q+ ≥ 15; the ion Xe q+ The charge state q+ ≥ 20.

[0060] The dosage of the ion beam 3 described in this invention can be reasonably selected according to the depth requirements of the etch pit 4, without specific limitations. In this preferred embodiment, the dosage of the ion beam 3 is set to 1 x 10⁻⁶. 14 ions / cm 2 ~1x10 17 ions / cm 2 .

[0061] The incident angle of the ion beam 3 described in this invention can be reasonably selected according to the requirements of the depth and roughness of the etch pit 4, without specific limitations. In this embodiment, the incident angle of the ion beam 3 is preferably set to one of 0°, 15°, 30°, 45°, 60°, and 75°.

[0062] The metal mask 2 described in this invention matches the ion type and protects the non-etched areas from etching. It can be designed according to the design and layout requirements of the etching pits 4 of the ceramic material, without specific limitations. In this embodiment, the metal mask 2 is preferably one or more of Al foil, Ni foil, Ta foil, and TiW foil. More specifically, the metal mask 2 of this invention also includes transmission electron microscopy (TEM) copper meshes of different mesh counts. Higher mesh counts result in smaller, denser holes and narrower linewidths. Typically, a 200-mesh copper mesh has approximately 100 μm holes and a grid linewidth of approximately 30 μm. The mask must be metallic because metallic materials contain a large number of free electrons, and the potential energy effect of low-energy, high-charge heavy ions will hardly cause severe damage such as Coulomb explosions. The specifications of the metal mask 2 are selected according to the shape, size, and distribution of the required etching pits 4 of the ceramic sample, and its thickness is typically from several hundred nanometers to tens of micrometers. The metal mask 2 has at least one hole with a diameter between tens of nanometers and millimeters. In this embodiment, the preferred diameter of the etched hole 21 is 10 nm to 5 mm, and the etching forms a micro-nano-level pit structure 4.

[0063] In this preferred embodiment, the ceramic material matrix 1 is one of oxides, carbides, nitrides, and fluorides. More specifically, the ceramic material matrix 1 of the present invention is an alumina ceramic material.

[0064] This invention utilizes the unique effect of low-energy, high-charge-state heavy ion potential energy deposition for etching processes on ceramic material surfaces, adding options for micro- and nano-etching of high-melting-point, corrosion-resistant, and poor-toughness ceramic materials. In addition to the materials listed in the specification, any ceramic material that has been experimentally demonstrated to be etched by low-energy, high-charge-state heavy ion beam irradiation can be micro- and nano-etched using the method of this invention. The potential energy carried by the low-energy, high-charge-state heavy ions is deposited only near the material surface, and the cumulative effect of the dose causes almost no damage or doping to the underlying substrate material. Ion irradiation is carried out in a vacuum, causing no contamination to the ceramic material surface.

[0065] The depth and roughness of the etch pit 4 are controlled by adjusting the type, energy, charge state, incident angle and dose of ions; the shape, size and distribution of the etch pit 4 are adjusted by changing the shape, size and distribution of the holes in the metal mask 2.

[0066] Practice has shown that the method of this invention produces very smooth etch pits 4 after irradiation, with low surface roughness in the etched area, enabling fine processing. By selecting a suitable metal mask, large-area micro / nano etch pit structures 4 can be formed in one step. This method is simple, fast, and low-cost, and has good application prospects. Most importantly, this invention cleverly utilizes the special effect of low-energy, high-charge state heavy ion potential energy deposition, which induces ion sputtering and etching on the ceramic material surface without etching the metal mask 2 material.

[0067] Furthermore, this invention differs fundamentally from existing traditional micro-nano etching techniques. Its competitive advantage lies in the absence of introducing chemical etchants and other substances onto the ceramic material surface. Instead, it utilizes the potential energy sputtering effect induced by low-energy, high-charge-state heavy ion irradiation to precisely control the micro-nano etching pit structure on the surface. Therefore, this method not only saves raw materials and energy but also offers significant advantages such as cleanliness, no additives, no pollution, and high preparation efficiency.

[0068] Reference Figures 2 to 18 In Examples 2 to 9 of the present invention, different doses and charge states of 600 keV Xe can be selected. 22+ Surface morphology images of Al₂O₃ crystals etched under two irradiation directions: vertical and 60° angle. Etching depth and roughness analysis were also presented. Etching depth analysis involved drawing lines from the non-etched area to the etched area, so the vertical distances were all negative, and their magnitude represented the etching depth. Under the same dose and charge state, the etching depth at the 60° angle was greater than the vertical etching depth. Roughness Rq represents the root mean square roughness; the roughness of the etched area etched by high-charge-state heavy ion potential energy sputtering was lower than that of the non-etched area.

[0069] Example 2:

[0070] Based on Example 1, the ceramic material surface etching method based on ion beam technology disclosed in this example preferably has a dose of 1x10⁻¹⁰. 14 Xe 22+ / cm 2 Ion beam 3 was used for irradiation etching at an incident angle of 0°, meaning the incident angle of ion beam 3 was perpendicular to the surface of the ceramic material substrate 1. All other steps and conditions were the same as in Example 1. (Reference) Figure 3 and Figure 4 As shown, 1x10 14 Xe 22+ / cm 2 After vertical etching of Al2O3 crystals, the average etching depth is about 2.3 nm, and the surface roughness is reduced from 1.45 nm to 1.16 nm.

[0071] Example 3:

[0072] Based on Example 2, this embodiment discloses a ceramic material surface etching method based on ion beam technology, preferably with an incident angle of 60°, while other steps and conditions are the same as in Example 2. (Reference) Figure 5 and Figure 6 As shown, 1x10 14 Xe 22+ / cm 2 The average etching depth of the Al2O3 crystal at a tilt angle of 60° is about 3.6 nm, and the surface roughness decreases from 1.10 nm to 1.06 nm.

[0073] Example 4:

[0074] Based on Example 1, the ceramic material surface etching method based on ion beam technology disclosed in this example preferably has a dose of 1x10⁻¹⁰. 15 Xe 22+ / cm 2 Ion beam 3 was used for irradiation etching at an incident angle of 0°, i.e., the incident angle of ion beam 3 was perpendicular to the surface of the ceramic material substrate 1. All other steps and conditions were the same as in Example 1. (Reference) Figure 7 and Figure 8 As shown, when the dose is increased to 1x10 15 Xe 22+ / cm 2 At that time, the average depth of vertical etching was about 5.3 nm, and the surface roughness decreased from 1.72 nm to 1.69 nm.

[0075] Example 5:

[0076] Based on Example 4, this embodiment discloses a ceramic material surface etching method based on ion beam technology, preferably with an incident angle of 60°, while other steps and conditions are the same as in Example 4. (Reference) Figure 9 and Figure 10 As shown, 1x10 15 Xe 22+ / cm 2 The average etching of Al2O3 crystals at a tilt angle of 60° is approximately 9.6 nm, and the surface roughness decreases from 1.81 nm to 1.65 nm.

[0077] Example 6:

[0078] Based on Example 1, the ceramic material surface etching method based on ion beam 3 disclosed in this example preferably has a dose of 1x10. 14 Xe 26+ / cm 2 Ion beam 3 was used for irradiation etching at an incident angle of 0°, meaning the incident angle of ion beam 3 was perpendicular to the surface of the ceramic material substrate 1. All other steps and conditions were the same as in Example 1. (Reference) Figure 11 and Figure 12 As shown, 1x10 14 Xe 26+ / cm 2 The average vertical etching depth of the Al2O3 crystal was approximately 4.2 nm, and the surface roughness was reduced from 2.75 nm to 2.67 nm.

[0079] Example 7:

[0080] Based on embodiment 6, the ceramic material surface etching method based on ion beam technology disclosed in this embodiment preferably has an incident angle of 60°, and all other steps and conditions are the same as in embodiment 6. (Reference) Figure 13 and Figure 14 As shown, 1x10 14 Xe 26+ / cm 2 The average etching depth of the Al2O3 crystal at a tilt angle of 60° is about 5.1 nm, and the surface roughness decreases from 1.09 nm to 0.78 nm.

[0081] Example 8:

[0082] Based on Example 1, the ceramic material surface etching method based on ion beam technology disclosed in this example preferably has a dose of 1x10⁻¹⁰. 15 Xe 26+ / cm 2 Ion beam 3 was used for irradiation etching at an incident angle of 0°, meaning the incident angle of ion beam 3 was perpendicular to the surface of the ceramic material substrate 1. All other steps and conditions were the same as in Example 1. (Reference) Figure 15 and Figure 16 As shown, 1x10 15 Xe 26+ / cm 2The average vertical etching depth of the Al2O3 crystal was approximately 11.3 nm, and the surface roughness decreased from 1.49 nm to 0.62 nm.

[0083] Example 9:

[0084] Based on embodiment 8, the ceramic material surface etching method based on ion beam technology disclosed in this embodiment preferably has an incident angle of 60°, and other steps and conditions are the same as in embodiment 8. Figure 17 and Figure 18 As shown, 1x10 15 Xe 26+ / cm 2 The average etching of Al2O3 crystal at a tilt angle of 60° is approximately 19.4 nm, and the surface roughness decreases from 0.64 nm to 0.52 nm.

[0085] The above description is only a preferred embodiment of the present invention and does not limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for etching the surface of ceramic materials based on ion beam technology, characterized in that, Includes the following steps: S1. Clean the ceramic material substrate (1) and the metal mask (2); the surface of the ceramic material substrate (1) includes etched areas and non-etched areas; the metal mask is provided with etch holes (21) matching the etched areas. S2. Fix the dried metal mask (2) onto the cleaned ceramic material substrate (1), and then cover the etched area of ​​the cleaned ceramic material substrate (1) with the perforated metal mask (2) to form a sample to be irradiated. S3. Place the sample to be irradiated in the target chamber, and set or adjust the ion type, ion kinetic energy, charge state q+, dose and incident angle of the ion beam (3); the ion type is an inert gas heavy ion; the ion kinetic energy is 300keV~990keV, and the charge state q+ is at least greater than 11; S4. Irradiate the etched area of ​​the sample to be irradiated with the ion beam to obtain the etched ceramic material product.

2. The method for etching the surface of ceramic materials based on ion beam technology according to claim 1, characterized in that, The ion type is Ar ion. q+ , ion Kr q+ ions Xe q+ One of them, q+ represents the charge state of the corresponding ion.

3. The method for etching the surface of ceramic materials based on ion beam technology according to claim 1, characterized in that, The Ar ion q+ The charge state q+ ≥ 11; the ion Kr q+ The charge state q+ ≥ 15; the ion Xe q+ The charge state q+ ≥ 20.

4. The method for etching the surface of ceramic materials based on ion beam technology according to claim 1, characterized in that, The dose of the ion beam (3) is set to 1x10. 14 ions / cm 2 ~1x10 17 ions / cm 2 .

5. The method for etching the surface of ceramic materials based on ion beam technology according to claim 1, characterized in that, The incident angle of the ion beam (3) is set to one of 0°, 15°, 30°, 45°, 60°, or 75°.

6. The method for etching the surface of ceramic materials based on ion beam technology according to any one of claims 1-5, characterized in that, The metal mask (2) is one or more of Al foil, Ni foil, Ta foil, and TiW foil.

7. The method for etching the surface of ceramic materials based on ion beam technology according to any one of claims 1-5, characterized in that, The aperture of the etched hole (21) is 10nm~5mm.

8. The method for etching the surface of ceramic materials based on ion beam technology according to any one of claims 1-5, characterized in that, The ceramic material matrix (1) is one of oxides, carbides, nitrides, and fluorides.

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