X-ray sensor, method of manufacture and touch screen

Abstract

This invention discloses a method for fabricating an X-ray sensor, comprising the following steps: S1, providing a touchscreen carrier; S2, fabricating a first film layer on the touchscreen carrier, measuring the thickness of the first film layer, and obtaining a first film thickness distribution map; S3, based on the first film thickness distribution map, fabricating a second film layer on the side of the first film layer away from the touchscreen carrier, measuring the total thickness of the first and second film layers, and obtaining a second film thickness distribution map; S4, based on the second film thickness distribution map, fabricating a third film layer on the side of the second film layer away from the touchscreen carrier, measuring the total thickness of the first, second, and third film layers, and obtaining a third film thickness distribution map. The X-ray sensor fabrication method of this invention can generate a film thickness distribution map after each film layer deposition, and adjust process parameters according to the defect region of the previous layer during the deposition of the next layer, which can effectively improve the film thickness uniformity of amorphous silicon and improve the electrical properties of amorphous silicon. This invention also discloses an X-ray sensor and a touchscreen.

Description

Technical Field

[0001] This invention belongs to the field of touch screen technology. Specifically, this invention relates to an X-ray sensor, a preparation method thereof, and a touch screen. Background Technology

[0002] Amorphous silicon (a-Si), also known as non-crystalline silicon, is an amorphous form of silicon. Compared to crystalline silicon, it has a lower melting point, density, and hardness. The structural characteristics of amorphous silicon lie in its short-range order and long-range disorder. Its standard tetrahedral molecular structure generates numerous defects during deformation, such as dangling bonds and voids. Amorphous silicon has wide applications in various fields, including solar cells, thin-film transistors, sensors, and microelectronic devices. It is typically used as a semiconductor layer between the source and drain electrodes, with the gate voltage controlling the current flow.

[0003] In the manufacturing process of X-ray sensors and electronic paper circuits, amorphous silicon undergoes hydrogenation to passivate dangling bonds, reduce defect states, and thus improve electrical performance. In the off state, its leakage current is extremely low (reaching the picoampere level), which helps maintain high image contrast. However, hydrogenated amorphous silicon films prepared using traditional PECVD (Plasma-Enhanced Chemical Vapor Deposition) methods often exhibit thickness uniformity exceeding 5%, and this poor thickness uniformity directly affects material properties and application performance.

[0004] An improved method for fabricating an X-ray sensor is provided, particularly concerning how to effectively improve the film thickness uniformity of amorphous silicon and enhance its electrical properties. Summary of the Invention

[0005] The present invention aims to at least solve one of the technical problems existing in the prior art. To this end, the present invention provides a method for fabricating an X-ray sensor, the purpose of which is to effectively improve the film thickness uniformity of amorphous silicon and enhance its electrical properties.

[0006] To achieve the above objectives, the technical solution adopted by this invention is: a method for preparing an X-ray sensor, comprising the following steps:

[0007] S1. Provide a touch screen carrier;

[0008] S2. Fabricate a first film layer on the touch screen carrier, measure the thickness of the first film layer, and obtain a first film thickness distribution map;

[0009] S3. Based on the first film thickness distribution map, a second film layer is fabricated on the side of the first film layer away from the touch screen carrier. The total thickness of the first film layer and the second film layer is measured to obtain the second film thickness distribution map.

[0010] S4. Based on the second film thickness distribution map, a third film layer is fabricated on the side of the second film layer away from the touch screen carrier. The total thickness of the first film layer, the second film layer and the third film layer is measured to obtain the third film thickness distribution map.

[0011] In step S2, the first film layer is fabricated using PECVD process, with the radio frequency power set to 1500W, the deposition pressure set to 1500mtoor, and the spacing set to 1250mils.

[0012] In step S3, the second film layer is fabricated using PECVD technology, and the process parameters are adjusted according to the first film thickness distribution map during deposition.

[0013] In step S4, the third film layer is fabricated using PECVD technology, and the process parameters are adjusted according to the second film thickness distribution map during deposition.

[0014] In step S2, the thickness of the first film layer is measured using an ellipsometer polarization measurement method, and the maximum thickness of the first film layer is: Minimum value is Film thickness uniformity is 5.6%.

[0015] In step S3, the thickness of the first and second films is measured using an ellipsometer polarization measurement method, and the maximum total thickness of the first and second films is [value missing]. Minimum value Film thickness uniformity 4%.

[0016] In step S3, the thicknesses of the first, second, and third films are measured using an ellipsometer polarization measurement method. The maximum total thickness of the first, second, and third films is [value missing]. Minimum value Film thickness uniformity is 3.3%.

[0017] The first, second, and third films are made of amorphous silicon.

[0018] The present invention also provides an X-ray sensor, including a touch screen carrier, and further including a first film layer disposed on the touch screen carrier, a second film layer disposed on the side of the first film layer away from the touch screen carrier, and a third film layer disposed on the side of the second film layer away from the touch screen carrier, wherein the thickness of the first film layer, the second film layer and the third film layer decreases sequentially, and the touch screen carrier is made of glass.

[0019] The present invention also provides a touch screen including the aforementioned X-ray sensor.

[0020] The X-ray sensor fabrication method of the present invention can generate a film thickness distribution map after each film layer is deposited, and adjust the process parameters according to the defect area of ​​the previous layer when depositing the next layer. This can effectively improve the film thickness uniformity of amorphous silicon, ensure that the thickness uniformity exceeds 5%, and improve the electrical properties of amorphous silicon. Attached Figure Description

[0021] This manual includes the following figures, which illustrate the following:

[0022] Figure 1 This is a flowchart of the method for preparing the X-ray sensor of the present invention;

[0023] Figure 2 This is a schematic diagram of the structure of the X-ray sensor of the present invention;

[0024] The diagram is marked as follows:

[0025] 1. First film layer; 2. Second film layer; 3. Third film layer; 4. Touch screen carrier. Detailed Implementation

[0026] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings, in order to help those skilled in the art to have a more complete, accurate and in-depth understanding of the concept and technical solutions of the present invention, and to facilitate its implementation.

[0027] It should be noted that in the following embodiments, the terms "first," "second," and "third" do not represent an absolute distinction in structure and / or function, nor do they represent the order of execution; they are merely for the convenience of description.

[0028] Firstly, such as Figure 1 As shown, this embodiment of the invention provides a method for fabricating an X-ray sensor, comprising the following steps:

[0029] S1. Provide a touch screen carrier;

[0030] S2. Fabricate a first film layer on the touch screen carrier, measure the thickness of the first film layer, and obtain a first film thickness distribution map;

[0031] S3. Based on the first film thickness distribution map, a second film layer is fabricated on the side of the first film layer away from the touch screen carrier. The total thickness of the first film layer and the second film layer is measured to obtain the second film thickness distribution map.

[0032] S4. Based on the second film thickness distribution map, a third film layer is fabricated on the side of the second film layer away from the touch screen carrier. The total thickness of the first film layer, the second film layer, and the third film layer is measured to obtain the third film thickness distribution map.

[0033] Specifically, in this embodiment of the invention, the touchscreen carrier is made of glass, and the first, second, and third films are made of amorphous silicon. The total thickness of the first, second, and third films is [missing information]. will The membrane is divided into three layers: the first layer, the second layer, and the third layer are designed with thicknesses of [missing information]. like Figure 1 As shown;

[0034] In this embodiment of the invention, based on film thickness and improved film deposition rate, a first film layer is first deposited on the touch screen carrier using a rapid film deposition process, and the film thickness at multiple points, including the middle and edge positions, on the entire touch screen carrier is measured using an ellipsometry.

[0035] In this embodiment of the invention, the process conditions of the second film layer are adjusted according to the film thickness distribution of the first film layer to ensure that the film thickness distribution trend and film stress of the second film layer under the process conditions are opposite to those of the first film layer. After the second film layer is coated, the film thickness is measured and analyzed.

[0036] In this embodiment of the invention, the process conditions of the third film layer are adjusted according to the film thickness distribution of the first and second film layers. In order to ensure the flatness of the overall film layer, the coating is carried out at a low speed to ensure the density of the film layer and to provide micro-compensation for the film thickness of the underlying first and second film layers.

[0037] In this embodiment of the invention, in step S1 above, the size of the touch screen carrier is 620*750mm and the thickness of the touch screen carrier is 0.5mm.

[0038] In this embodiment of the invention, in step S2 above, a first film layer is deposited on the touchscreen carrier using PECVD process, and the deposition time is calculated based on the deposition rate to control the film thickness of the first film layer. The process parameters for fabricating the first film layer are as follows:

[0039] Set the RF power to 1500W, the deposition pressure to 1500mtoor, the spacing to 1250mils, the SIH4 gas flow rate to 700sccm, and the H2 gas flow rate to 3750sccm.

[0040] In this embodiment of the invention, in step S2 above, the thickness of the first film layer is measured using an ellipsometer polarization measurement method, and the maximum thickness of the first film layer is... Minimum value is The film thickness uniformity was 5.6%. Based on the collected data, a first film thickness distribution map was created and film thickness data analysis was performed.

[0041] In this embodiment of the invention, in step S3 above, a second film layer is deposited on the first film layer using a PECVD process. During deposition, process parameters are adjusted according to the first film thickness distribution map to control the film thickness of the second film layer. If the edges of the first film layer are too thick, the deposition rate in the edge region is reduced during the deposition of the second film layer to achieve overall uniformity through "peak smoothing and valley filling". The process parameters for fabricating the second film layer are as follows:

[0042] Set the RF power to 350W, the deposition pressure to 1600mtoor, the spacing to 550mils, the SIH4 gas flow rate to 600sccm, and the H2 gas flow rate to 2400sccm.

[0043] In this embodiment of the invention, in step S3 above, the thickness of the first film layer and the second film layer is measured using an ellipsometer polarization measurement method, and the maximum total thickness of the first film layer and the second film layer is: Minimum value Film thickness uniformity was 4%. Based on the collected data, a second film thickness distribution map was created and film thickness data analysis was performed.

[0044] In this embodiment of the invention, in step S4 above, a third film layer is fabricated using PECVD technology. During deposition, process parameters are adjusted according to the second film thickness distribution map to control the film thickness of the third film layer. The process parameters for fabricating the third film layer are as follows:

[0045] Set the RF power to 110W, the deposition pressure to 1600mtoor, the spacing to 550mils, the SIH4 gas flow rate to 600sccm, and the H2 gas flow rate to 2400sccm.

[0046] In this embodiment of the invention, in step S3 above, the thicknesses of the first, second, and third films are measured using an ellipsometer polarization measurement method. The maximum total thickness of the first, second, and third films is [value missing]. Minimum value Film thickness uniformity was 3.3%. Based on the collected data, a third film thickness distribution map was created and film thickness data analysis was performed.

[0047] During the fabrication process, the first film layer exhibits a thinner center and thicker periphery. Therefore, when fabricating the second and third films, the energy carried by the SI and H plasmas is gradually reduced by decreasing the radio frequency power, thereby reducing the free movement path of the plasma and decreasing the probability of the central plasma moving towards the edges. Simultaneously, the distance between the electrode and the glass substrate is reduced, and the angle of gas diffusion is changed to reduce the diffusion of silane (SiH4) and hydrogen (H2) molecules towards the edges. By reducing the deposition rate at the edges of the substrate in the above ways, the uniformity of the film thickness is improved.

[0048] In summary, the method for improving the uniformity of amorphous silicon film thickness provided by the embodiments of the present invention can effectively correct the thickness of the underlying film by changing the spacing, radio frequency power, deposition pressure, and the flow ratio of silane (SiH4) and hydrogen (H2) in the deposition process. By optimizing the process parameters, the deposition rate control between the center and the edge of the film layer can be achieved. The thickness of the underlying film layer is compensated and improved by a step-by-step film deposition method (the first layer has a thinner center and thicker edges; the second and third layers reduce the energy carried by the Si and H plasmas by gradually reducing the radio frequency power, reducing the free movement path of the plasma, reducing the probability of the plasma moving from the center to the edge, simultaneously reducing the spacing between the electrode and the glass carrier, changing the gas diffusion angle to reduce the diffusion of silane (SiH4) and hydrogen (H2) molecules to the edge, and reducing the deposition rate at the edge of the carrier to improve the uniformity of film thickness through the above methods). The flatness of the film layer can be optimized, which can improve the uniformity of the thickness of the amorphous silicon film layer to 3.3%, providing broad prospects for the material properties and applications of amorphous silicon.

[0049] In this embodiment of the invention, an innovative three-step film deposition technique is employed to precisely compensate for and improve the thickness of the underlying film layer. This method effectively solves the problem of achieving film thickness uniformity exceeding 5% when depositing hydrogenated amorphous silicon films using PECVD technology. This technique can improve film thickness uniformity to 3.8%, significantly enhancing the uniformity of the hydrogenated amorphous silicon coating and the flatness of the film structure. This improvement not only enhances the stability and reliability of TFT (thin-film transistor) driving but also has significant implications for improving the performance and lifespan of the entire display device.

[0050] Secondly, such as Figure 2 As shown, this embodiment of the invention also provides an X-ray sensor prepared by the above-described preparation method, comprising a touch screen carrier, a first film layer disposed on the touch screen carrier, a second film layer disposed on the side of the first film layer away from the touch screen carrier, and a third film layer disposed on the side of the second film layer away from the touch screen carrier. The thicknesses of the first film layer, the second film layer, and the third film layer decrease sequentially. The touch screen carrier is made of glass.

[0051] Thirdly, embodiments of the present invention also provide a touch screen including an X-ray sensor with the above-described structure.

[0052] The present invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the inventive concept and technical solution; or the direct application of the inventive concept and technical solution to other situations without modification, are all within the protection scope of the present invention.

Claims

1. A method for fabricating an X-ray sensor, characterized in that, Including the following steps: S1. Provide a touch screen carrier; S2. Fabricate a first film layer on the touch screen carrier, measure the thickness of the first film layer, and obtain a first film thickness distribution map; S3. Based on the first film thickness distribution map, a second film layer is fabricated on the side of the first film layer away from the touch screen carrier. The total thickness of the first film layer and the second film layer is measured to obtain the second film thickness distribution map. S4. Based on the second film thickness distribution map, a third film layer is fabricated on the side of the second film layer away from the touch screen carrier. The total thickness of the first film layer, the second film layer and the third film layer is measured to obtain the third film thickness distribution map.

2. The method for preparing an X-ray sensor according to claim 1, characterized in that, In step S2, the first film layer is fabricated using PECVD process, with the radio frequency power set to 1500W, the deposition pressure set to 1500mtoor, and the spacing set to 1250mils.

3. The method for preparing an X-ray sensor according to claim 1, characterized in that, In step S3, the second film layer is fabricated using PECVD technology, and the process parameters are adjusted according to the first film thickness distribution map during deposition.

4. The method for preparing an X-ray sensor according to any one of claims 1 to 3, characterized in that, In step S4, the third film layer is fabricated using PECVD technology, and the process parameters are adjusted according to the second film thickness distribution map during deposition.

5. The method for preparing an X-ray sensor according to any one of claims 1 to 3, characterized in that, In step S2, the thickness of the first film layer is measured using an ellipsometer polarization measurement method, and the maximum thickness of the first film layer is: Minimum value is Film thickness uniformity is 5.6%.

6. The method for preparing an X-ray sensor according to any one of claims 1 to 3, characterized in that, In step S3, the thickness of the first and second films is measured using an ellipsometer polarization measurement method, and the maximum total thickness of the first and second films is [value missing]. Minimum value Film thickness uniformity 4%.

7. The method for preparing an X-ray sensor according to any one of claims 1 to 3, characterized in that, In step S3, the thicknesses of the first, second, and third films are measured using an ellipsometer polarization measurement method. The maximum total thickness of the first, second, and third films is [value missing]. Minimum value Film thickness uniformity is 3.3%.

8. The method for preparing an X-ray sensor according to any one of claims 1 to 3, characterized in that, The first, second, and third films are made of amorphous silicon.

9. An X-ray sensor prepared by any one of the preparation methods according to claims 1 to 8, comprising a touch screen carrier, characterized in that, It also includes a first film layer disposed on the touch screen carrier, a second film layer disposed on the side of the first film layer away from the touch screen carrier, and a third film layer disposed on the side of the second film layer away from the touch screen carrier, wherein the thickness of the first film layer, the second film layer and the third film layer decreases sequentially.

10. A touchscreen, characterized in that, Including the X-ray sensor as described in claim 9.

Images