A connector rapid test tool
Patent Information
- Application Number
- CN202611084053.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2026-07-21
- Publication Date
- 2026-10-09
- Estimated Expiration
- 2046-07-21
AI Technical Summary
然而,该类方案在实际快速测试中仍存在以下问题与不足:首先,在快速测试场景下,快速测试时第一外导体与第三外导体端面依靠手动压紧接触,无螺纹锁紧,每次装夹的接触压力大小和方向存在差异,导致端面接触间隙在微米级随机波动,实测S参数中混杂了接触状态引入的误差分量,使得操作人员难以区分偏差来源于产品不合格还是装夹操作不当,影响测试准确性和重复性;其次现有方案中操作人员难以感知或量化径向偏心对高频信号传输的影响,更难以将其从测试结果中分离;工装在长期使用中,存在导体端面之间反复接触产生微米级磨损、绝缘体之间长期受力产生塑性蠕变等等退化情况,而这些退化因素逐步改变工装初始校准状态,导致测试精度随时间下降
一、本发明将等效轴向间隙、径向偏移量和绝缘体偏移量通过平方折算与加法融合为等效总间隙,再与接触压力指数以耦合除法融合生成信号相位扰动量,在此基础上结合热膨胀扰动生成端面接触修正系数,以此实现接触误差的量化分离与比例补偿。使得操作人员快速压紧即可,算法自动补偿装夹偏差。至此通过多层次特征融合实现端面接触误差的分离与补偿。
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Figure CN122592000B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of connector testing technology, specifically to a rapid connector testing fixture. Background Technology
[0002] The terahertz 2-hole flange 1.0mm coaxial connector is a key interconnect component operating in the millimeter-wave to terahertz frequency band, covering a frequency range of DC to 110GHz. This connector features a 2-hole flange mounting design with a face-emitting end. One end is a standard 1.0mm female interface, which can be mated with other standard ports via a threaded sleeve. The other end is an open end, with the T-shaped tail structure of the first inner conductor exposed beyond the second outer conductor. This prevents direct connection to the standard test ports of a vector network analyzer, thus hindering direct testing of electrical performance parameters such as voltage standing wave ratio (VSWR) and insertion loss (IL).
[0003] In recent years, specially designed test fixtures have emerged, converting the open ends of connectors into standard ports through back-to-back end-face contact. However, this type of solution still has the following problems and shortcomings in actual rapid testing: First, in rapid testing scenarios, the first and third outer conductors rely on manual clamping for contact without threaded locking. The magnitude and direction of the contact pressure vary with each clamping, causing the end-face contact gap to fluctuate randomly at the micrometer level. The measured S-parameters are mixed with error components introduced by the contact state, making it difficult for operators to distinguish whether the deviation originates from product defects or improper clamping operations, affecting test accuracy and repeatability. Second, in existing solutions, operators find it difficult to perceive or quantify the impact of radial eccentricity on high-frequency signal transmission, and even more difficult to separate it from the test results. During long-term use, the fixture suffers from degradation such as micrometer-level wear caused by repeated contact between conductor end faces and plastic creep caused by long-term stress between insulators. These degradation factors gradually change the initial calibration state of the fixture, causing the test accuracy to decrease over time. In the existing solution, the tooling is only detected when the accuracy deteriorates significantly. By this time, a large amount of unreliable test data has been generated, and there is a lack of quantitative means to determine when maintenance is needed. In addition, in large-scale continuous rapid testing, the local temperature rise caused by repeated friction on the end face gradually accumulates. Although the existing solution assumes that each test is carried out under constant temperature conditions, it ignores the impact of the cumulative effect of temperature drift on the repeatability of the test. Summary of the Invention
[0004] The purpose of this invention is to provide a rapid testing fixture for connectors, which solves the problems mentioned in the background art.
[0005] To achieve the above objectives, the present invention provides a rapid connector testing fixture, comprising a connector body and a testing fixture. Both the connector body and the testing fixture are provided with a first outer conductor. The connector body also contains a second outer conductor and a first inner conductor. The testing fixture further contains a third outer conductor and a second inner conductor. The first outer conductor and the third outer conductor are in back-to-back end-face contact. The tail of the first inner conductor is configured with a T-shaped structure. A groove is formed on the end face of the third outer conductor, and the T-shaped structure is inserted into the groove. The end faces of the first inner conductor and the second inner conductor are in contact. The rapid connector testing fixture also includes a signal phase disturbance acquisition unit, an end-face contact correction coefficient acquisition unit, and a contact state iteration factor acquisition unit. The signal phase disturbance acquisition unit is used to acquire the equivalent axial gap between the first outer conductor end face and the third outer conductor end face, the radial offset of the T-shaped structure relative to the center line of the groove, and the insulator offset of the first insulator and the second insulator in the connector body, and to obtain the signal phase disturbance based on the equivalent axial gap, radial offset, insulator offset and end face contact pressure index. The end face contact correction coefficient acquisition unit is used to acquire the ratio of the signal phase disturbance to the reference signal phase disturbance, and the ratio of the transient thermal expansion disturbance to the maximum thermal expansion disturbance threshold. After multiplying and coupling the two ratios, they are fused with the inherent impedance deviation of the tooling and the end face contact pressure index to obtain the end face contact correction coefficient. The contact state iteration factor acquisition unit is used to acquire the ratio of the equivalent axial clearance to the reference equivalent axial clearance in the current calibration cycle, the joint penalty factor of the end face contact correction coefficient and the radial offset after correction by the radius of the groove, and the ratio of the insulator offset to the reference insulator offset in the current calibration cycle. The three are then fused to obtain the contact state iteration factor, which is used to update the reference equivalent axial clearance.
[0006] Optionally, in the signal phase disturbance acquisition unit, the radial offset is squared and then divided by twice the radius of the groove to obtain the equivalent axial clearance increment. The equivalent axial clearance increment is then added to the equivalent axial clearance and the insulator offset to obtain the equivalent total axial clearance. Multiplying the equivalent total axial clearance by the phase conversion factor of signal transmission yields the preliminary phase disturbance. The product of the end face contact pressure index and the temperature correction term is obtained, and the reciprocal is taken to obtain the contact quality correction factor. The initial phase disturbance is multiplied by the contact quality correction factor to obtain the signal phase disturbance. The temperature correction term is the base value plus the product of the linear expansion coefficient of the tooling material and the temperature difference.
[0007] Optionally, the phase conversion factor is determined by the test frequency, the speed of light in vacuum, and the relative permittivity of the first insulator and the second insulator, specifically by dividing the test frequency by the speed of light in vacuum and then multiplying by the square root of the relative permittivity by 360 times.
[0008] Optionally, in the end face contact correction coefficient acquisition unit, the inherent impedance deviation of the tooling is obtained by dividing the standard characteristic impedance by an impedance calculation quantity determined by the vacuum permeability, vacuum permittivity, the inner diameter of the first outer conductor and the third outer conductor, and the outer diameter of the first inner conductor and the second inner conductor. The phase-temperature coupling term is obtained by fusing the ratio of the signal phase perturbation to the reference signal phase perturbation and the ratio of the transient thermal expansion perturbation to the maximum thermal expansion perturbation threshold. The end-face contact correction coefficient is obtained by multiplying the inherent impedance deviation, the phase temperature coupling term, and the end-face contact pressure index.
[0009] Optionally, the process of obtaining the transient thermal expansion disturbance includes: A thermocouple is installed on the outer wall of the third outer conductor to obtain the temperature difference between two consecutive tests, divided by the ratio of the test time interval to the reference temperature, and converted into a percentage.
[0010] Optionally, in the contact state iteration factor acquisition unit, the joint penalty factor is obtained by taking the reciprocal of the product of the end face contact correction coefficient and a radial offset correction term; The contact state iteration factor is obtained by multiplying the ratio of the equivalent axial clearance of the current calibration cycle to the reference equivalent axial clearance, the joint penalty factor, and the ratio of the insulator offset of the current calibration cycle to the reference insulator offset.
[0011] Optionally, the feedback update of the contact state iteration factor for the reference equivalent axial clearance adopts a damped update method, and the specific calculation formula for the update is as follows: EGL ref(n+1) =EGL ref(n) ×[1+λ×(CSIF (n) -1)]; Among them, EGL ref(n+1) EGL is the baseline equivalent axial clearance for the (n+1)th test. ref(n) CSIF is the reference equivalent axial clearance for the nth test. (n) Let λ be the contact state iteration factor for the nth test, and let λ be the damping factor, wherein the value of the damping factor λ is in the range of 0 < λ < 1.
[0012] Optionally, the damping update method is configured with a dual threshold strategy, that is, the update operation of the reference equivalent axial clearance is only performed when the normalized value of the contact state iteration factor deviates from 1 by more than a preset threshold and the preset threshold is exceeded in multiple consecutive tests.
[0013] Optionally, it also includes a guide fixture, a flange, and a rubber ring. The guide fixture is disposed at the mating point between the connector body and the test fixture and is used to guide the T-shaped structure of the first inner conductor into the groove of the third outer conductor. The flange is disposed on the test fixture and is used to fix the test fixture to the test table. The rubber ring is disposed at the contact surface between the connector body and the test fixture.
[0014] Optionally, a pressure-sensitive film pad for obtaining the contact pressure index of the end face is provided between the first outer conductor end face and the third outer conductor end face.
[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: This invention fuses the equivalent axial clearance, radial offset, and insulator offset into an equivalent total clearance through square reduction and addition. This total clearance is then fused with the contact pressure index via coupled division to generate a signal phase perturbation. Based on this, a face contact correction coefficient is generated by incorporating thermal expansion perturbation, thereby achieving quantitative separation and proportional compensation of contact errors. This allows operators to quickly tighten the contact, and the algorithm automatically compensates for clamping deviations. Thus, face contact errors are separated and compensated through multi-level feature fusion.
[0016] Second, this invention generates a contact state iteration factor by multiplying the end face gap ratio, the reciprocal of the correction coefficient, the joint penalty factor of the offset characteristic quantity, and the insulator offset ratio. This factor is then used to slowly adjust the reference value through damped updates and a dual-threshold strategy, enabling the tooling calibration reference to adaptively track degradation trends. In cases of mild degradation, automatic compensation maintains accuracy; in cases of severe degradation, proactive warnings are issued and specific components requiring inspection are clearly indicated, extending the maintenance-free period.
[0017] Third, this invention utilizes a miniature thermocouple mounted on the outer wall of the third outer conductor to monitor temperature changes in real time and extract transient thermal expansion disturbances. These disturbances are normalized by the ratio of the temperature change rate to a reference temperature. The ratio of the transient thermal expansion disturbance to the signal phase disturbance is then multiplied, dynamically incorporating the impact of temperature drift on end-face contact into the end-face contact correction coefficient. Under typical production line constant-temperature conditions, the transient thermal expansion disturbance is close to zero and does not participate in compensation. However, when continuous mass testing causes the overall tooling temperature to rise, the system automatically activates, compensating for contact state changes caused by thermal expansion. This achieves intelligent temperature management that is silent at room temperature and automatically activated at high temperatures. Attached Figure Description
[0018] Figure 1 This is a front view of the connector body in the rapid testing fixture for connectors of the present invention; Figure 2 This is a half-sectional view of the connector body in the rapid testing fixture for connectors of the present invention. Figure 3 This is a half-sectional view of the test fixture in the connector rapid test fixture of the present invention; Figure 4 This is a schematic diagram of the back-to-back testing of the connector body and the test fixture in this invention; Figure 5 For the present invention Figure 4 Enlarged schematic diagram of the structure at point A; Figure 6 This is a schematic diagram of the entire testing process of the connector rapid testing fixture of the present invention.
[0019] In the figure: 1-Connector body, 2-Test fixture, 3-Guide fixture, 4-Flange, 5-Rubber ring, 6-First insulator, 7-Second insulator, 8-First outer conductor, 9-Second outer conductor, 10-First inner conductor, 11-Third outer conductor, 12-Second inner conductor, 13-Groove. Detailed Implementation
[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0021] This embodiment provides a rapid testing fixture for connectors. The overall idea is as follows: to address the problems of test errors and poor repeatability caused by factors such as manual end face clamping, radial eccentricity, insulator creep and temperature accumulation in rapid testing scenarios of terahertz coaxial connectors, a multi-level feature fusion model is constructed, including signal phase disturbance, end face contact correction coefficient and contact state iteration factor, to achieve real-time quantification, separation and adaptive compensation of contact state error, thereby significantly improving test accuracy and long-term stability while ensuring rapid clamping operation.
[0022] This rapid connector testing fixture is designed for applications primarily focused on rapid batch testing of coaxial connectors (especially 1.0mm 2-hole flange connectors) in the millimeter-wave to terahertz frequency band (DC-110GHz). In such scenarios, the open end of the connector body 1 (the T-shaped tail structure of the first inner conductor 10 exposed outside the second outer conductor 9) needs to be converted into a standard test port using the testing fixture 2 to connect to a vector network analyzer for electrical performance testing such as voltage standing wave ratio (VSWR) and insertion loss (IL). Due to the high testing cycle requirements, the connector body 1 and the testing fixture 2 rely on manual clamping to achieve end-face contact, without threaded locking. The contact pressure and radial alignment state vary randomly with each clamping operation, and long-term end-face wear, insulator creep, and accumulated temperature rise from continuous testing all degrade test accuracy. The technical solution provided in this embodiment effectively addresses these dynamic changes and is suitable for batch testing production lines that require a balance between testing efficiency and accuracy.
[0023] Example 1, such as Figures 1 to 6 As shown, this embodiment of the invention provides a connector rapid testing fixture, including a connector body 1 and a testing fixture 2. Both the connector body 1 and the testing fixture 2 are provided with a first outer conductor 8. The connector body 1 also contains a second outer conductor 9 and a first inner conductor 10, and the testing fixture 2 further contains a third outer conductor 11 and a second inner conductor 12. The first outer conductor 8 and the third outer conductor 11 are in back-to-back end-face contact. The tail of the first inner conductor 10 is configured with a T-shaped structure, and a groove 13 is formed on the end face of the third outer conductor 11. The T-shaped structure is inserted into the groove 13, and the end faces of the first inner conductor 10 and the second inner conductor 12 are in contact.
[0024] To ensure accurate and smooth insertion of the T-shaped structure into the groove 13 during each mating process and to improve the stability and repeatability of the testing process, the connector rapid testing fixture also includes a guide fixture 3, a flange 4, and a rubber ring 5. The guide fixture 3 is located at the mating point between the connector body 1 and the testing fixture 2, guiding the T-shaped structure of the first inner conductor 10 into the groove 13 of the third outer conductor 11. The flange 4 is mounted on the testing fixture 2 to fix it to the test platform, ensuring its position remains fixed during testing. The rubber ring 5 is located at the contact surface between the connector body 1 and the testing fixture 2, providing cushioning and sealing to reduce impact and wear from rigid contact.
[0025] In this embodiment, the first insulator 6 and the second insulator 7 inside the connector body 1 support the first inner conductor 10 and keep it coaxial with the second outer conductor 9; the first insulator 6 and the second insulator 7 inside the test fixture 2 support the second inner conductor 12. When the connector body 1 is mated with the test fixture 2, the end face of the first outer conductor 8 and the end face of the third outer conductor 11 form a back-to-back contact. The tightness of this contact directly determines the continuity of high-frequency signal transmission. The T-shaped structure at the tail of the first inner conductor 10 is inserted into the groove 13 of the third outer conductor 11. The inner diameter of the groove 13 is slightly larger than the outer diameter of the T-shaped head, allowing self-alignment under the guidance of the guide fixture 3. The front end face of the first inner conductor 10 and the end face of the second inner conductor 12 abut against each other axially, forming an electrically continuous path for the inner conductors.
[0026] In this embodiment, the contact pressure between the end faces of the first outer conductor 8 and the third outer conductor 11, the radial position of the T-structure in the groove 13, and the axial positions of the first insulator 6 and the second insulator 7 all directly affect the impedance continuity and electrical length of the signal transmission path. However, these structural deviations are difficult to measure directly in rapid testing, and also difficult to compensate uniformly through simple mechanical adjustments. Therefore, this connector rapid testing fixture also integrates a signal phase disturbance acquisition unit, an end face contact correction coefficient acquisition unit, and a contact state iteration factor acquisition unit to quantitatively evaluate and dynamically compensate for the contact state through an algorithm model.
[0027] Understandably, the guide fixture 3 ensures consistency in each insertion action, and the flange 4 ensures the reference fixation of the test fixture 2. However, even with the aforementioned mechanical auxiliary structures, the end-face gap fluctuations caused by manual clamping operations, the slight eccentricity of the T-shaped structure, and the creep displacement caused by long-term pressure on the insulator are still uncontrollable random error sources. Therefore, it is necessary to use the signal processing unit described in the subsequent embodiments to convert these structural deviations into quantifiable electrical correction parameters in order to achieve the separation and compensation of test errors.
[0028] Thus, the structure provided in this embodiment enables rapid and repeatable mechanical docking between the connector body 1 and the test fixture 2, and provides a structural basis and signal acquisition interface for subsequent electrical error compensation.
[0029] Example 2, as Figures 1 to 6As shown, based on Embodiment 1, the signal phase disturbance acquisition unit provided in this embodiment of the invention is used to acquire the equivalent axial gap EGL between the end face of the first outer conductor 8 and the end face of the third outer conductor 11, the radial offset TIO of the T-shaped structure relative to the center line of the groove 13, and the insulator offset DSO of the first insulator 6 and the second insulator 7 in the connector body 1. Based on the above equivalent axial gap EGL, radial offset TIO, insulator offset DSO and end face contact pressure index EPI, the signal phase disturbance SPD is calculated.
[0030] In this embodiment, the radial offset TIO is obtained by measuring the minimum distance between the outer wall of the T-shaped structure at the tail of the first inner conductor 10 and the inner wall of the groove 13 using a high-precision displacement sensor (such as a laser displacement meter or an inductive displacement sensor) mounted on the guide fixture 3. Then, based on the design radius R of the groove 13, the distance is calculated. cav The radial offset of the centerline of the T-shaped structure relative to the centerline of the groove 13 is calculated. The insulator offset DSO is obtained by optical projection measurement or confocal microscopy to obtain the axial displacement of the first insulator 6 and the second insulator 7 relative to their respective design reference planes.
[0031] The specific quantization method for the signal phase perturbation (SPD) is as follows: ; In the formula: SPD is the signal phase perturbation, f is the test frequency, c is the speed of light in vacuum, and ε is the signal phase perturbation. r R represents the relative permittivity of the first insulator 6 and the second insulator 7. EGL is the equivalent axial clearance, determined by the contact state between the end face of the first outer conductor 8 and the end face of the third outer conductor 11. TIO is the radial offset of the T-shaped structure of the first inner conductor 10, determined by the centering of the tail of the first inner conductor 10 in the groove 13, reflecting the alignment accuracy of the guide fixture 3. cav 13 is the radius of the groove 13, DSO is the insulator offset, which reflects the positional deviation of the first insulator 6 and the second insulator 7 after long-term use, EPI is the end face contact pressure index, the ratio of the end face contact pressure of the first outer conductor 8 and the third outer conductor 11, a is the linear expansion coefficient of the materials of the first outer conductor 8 and the third outer conductor 11, and ΔT is the temperature difference between the current temperature and the 25°C reference temperature. It is a standard conversion factor (degrees / meter) that converts the physical gap into a phase offset, which is then multiplied by the equivalent total gap to obtain the SPD in degrees (°).
[0032] The calculation constitutes the equivalent total axial clearance, where EGL is the direct contribution of the axial end face clearance. The radial offset (TIO) is the equivalent clearance increment in the axial direction calculated through the geometry of groove 13: the larger the TIO, the closer the T-head is to the sidewall of groove 13, which is equivalent to increasing the electrical clearance of the outer conductor end face. Here, the square of TIO is divided by twice the radius R of groove 13. cav The formula for the average gap change caused by the eccentricity within the circular cross section is derived from the DSO, which is the direct axial contribution of the insulator offset. It unifies the three structural deviations with different physical positions and directions into the same metric dimension (axial equivalent electrical length), so that their combined influence on the signal phase can be characterized by a sum. It is worth noting that the gap between the second outer conductor 9 and the third outer conductor 11 is a purely mechanical contact gap, but it only reflects the local state of the contact surface. The first outer conductor 8 is the outer conductor in the connector body 1 that is far from the contact surface but close to the reference surface. Defining EGL as the equivalent axial gap between the end face of the first outer conductor 8 and the end face of the third outer conductor 11 is actually a way of concentrating the electrical length deviation of the entire connector under test onto the end face contact point. Specifically: When the connector body 1 and the test fixture 2 are mated back to back, the second outer conductor 9 + the first insulator 6 + the first outer conductor 8 together constitute the outer conductor chain of the device under test. If the first insulator 6 has a slight positional offset (DSO), the inner diameter of the first outer conductor 8 has a machining tolerance, or the T-shaped structure of the first inner conductor 10 has a positional deviation in the groove 13, these factors will produce an effect similar to the end face gap on the S-parameter (S-parameter stands for Scattering Parameters, which is a mathematical representation in microwave / RF engineering that describes the transmission and reflection characteristics of high-frequency signals in a network). All these factors are equivalent to the EGL between the end face of the first outer conductor 8 and the end face of the third outer conductor 11. The purpose is to use a single parameter to capture all the factors that cause the electrical length between the device under test and the fixture to deviate from the ideal value.
[0033] This is the contact quality correction factor: the smaller the EPI (insufficient contact pressure), the smaller the denominator, and the larger the overall fractional value, meaning increased phase disturbance. The baseline value is set to 1. The material expansion caused by increased temperature results in a tighter fit between the end faces (a larger denominator and reduced phase perturbation), but it also alters the mechanical stress state. Multiplying these two factors and taking the reciprocal reveals the coupling relationship between contact pressure and thermal expansion: insufficient pressure and temperature effects jointly affect the quality of end face contact. It should be noted that in the ambient temperature (25°C constant temperature) testing environment of the production line, the localized temperature rise caused by end face friction is extremely limited; therefore, ΔT≈0. At this point, the contact quality correction factor degenerates into In other words, in a typical production line environment, the temperature term does not actually have any effect; only the EPI term is relevant. However, retaining the ΔT term is significant because it is relevant to atypical but real-world scenarios, including but not limited to large-volume continuous rapid testing (heat accumulation) and non-constant temperature environment testing.
[0034] Furthermore, similar to EGL, if the contact pressure between the second outer conductor 9 and the third outer conductor 11 is measured, it can only reflect the local mechanical clamping force of the contact surface. However, when the entire connector body 1 is pressed back to back, the pressure is transmitted through the second outer conductor 9 to the first insulator 6, and then to the first outer conductor 8. The entire structure is a mechanical series system. Defining EPI as the contact pressure index between the end face of the first outer conductor 8 and the end face of the third outer conductor 11 is actually equivalent to the comprehensive effect of the entire mechanical link between the two end faces. Thus, it is consistent with the equivalent logic of EGL.
[0035] Therefore, the signal phase perturbation (SPD) represents the phase measurement error introduced by the non-ideal end-face contact, which is directly related to the degree of degradation of the high-frequency signal phase caused by the end-face contact quality. The larger the SPD, the worse the end-face contact quality under the current test condition, and the greater the deviation of the measured S-parameters from the true value.
[0036] Example 3, as Figures 1 to 6 As shown, the end-face contact correction coefficient acquisition unit provided in this embodiment of the invention is used to acquire the signal phase perturbation SPD and the reference signal phase perturbation SPD. ref The ratio of the transient thermal expansion disturbance TTD to the maximum thermal expansion disturbance threshold TTD. max The ratio of the two ratios is multiplied and coupled, and then fused with the inherent impedance deviation of the tooling and the end face contact pressure index EPI to obtain the end face contact correction coefficient ECCF.
[0037] In this embodiment, the reference signal phase perturbation quantity SPD ref The SPD is the average value obtained from multiple tests under ideal clamping conditions (EPI≈1, TIO≈0, DSO≈0) during factory calibration or the last successful calibration. This value is stored in the non-volatile memory of the test system.
[0038] The process of obtaining the transient thermal expansion disturbance TTD includes: setting a miniature thermocouple on the outer wall of the third outer conductor 11 to monitor the temperature change between two consecutive tests in real time. Specifically, the temperature difference ΔT between the two consecutive tests is obtained. test Divide by the test time interval Δt and the reference temperature T ref (Take 25℃), then multiply by 100 to convert to a percentage.
[0039] The TTD value reflects the severity of temperature change per unit time, indirectly characterizing the dynamic disturbance of thermal expansion on the end-face contact state. Maximum thermal expansion disturbance threshold TTD max The default value is usually the percentage of thermal expansion of the tooling material under the maximum allowable operating temperature difference, which is used to normalize the TTD.
[0040] The inherent impedance deviation of the tooling is calculated by dividing the standard characteristic impedance Z0 by a factor R, which is determined by the vacuum permeability μ0, the vacuum permittivity ε0, and the inner diameters R of the first outer conductor 8 and the third outer conductor 11. outer and the outer diameter R of the first inner conductor 10 and the second inner conductor 12 inner The determined impedance is obtained through calculation.
[0041] Specifically, the quantification method of the end face contact correction factor ECCF is as follows: ; In the formula: ECCF is the end-face contact correction factor, Z0 is the standard characteristic impedance, μ0 is the free permeability, ε0 is the free permittivity, and R... outer R is the inner diameter of the first outer conductor 8 and the third outer conductor 11. inner The outer diameters of the first inner conductor 10 and the second inner conductor 12 are SPD. ref TTD represents the phase perturbation of the reference signal, and TTD represents the transient thermal expansion perturbation. max This is the threshold for maximum thermal expansion disturbance. In the above formula, It is the ratio of the theoretical characteristic impedance of the coaxial structure to the ideal 50Ω: According to coaxial transmission line theory, the characteristic impedance... ,therefore That is, the fraction equals When R outer and R inner When Z is the perfect design value c =Z0, this ratio is close to 1 / 2π (approximately 0.159). However, in actual tooling, due to factors such as the support positions of the first insulator 6 and the second insulator 7, and the machining tolerances of the groove 13, R outer and R inner The effective value will deviate from the design value, and this ratio is used to capture the effect of this geometric deviation on the impedance; It is a phase and temperature coupling correction term: It is the ratio of the current phase disturbance relative to the reference. The larger the SPD, the larger the ratio, indicating poorer end-face contact; This is the ratio of the current thermal expansion disturbance to the maximum allowable value. The larger the TTD, the larger the ratio, indicating a more significant temperature rise. The two are multiplied, not added, because the phase disturbance and thermal expansion disturbance are coupled and affect impedance matching: when there is already a gap at the end face (large SPD) and the temperature rise simultaneously causes material expansion (large TTD), the two amplify each other. Thermal expansion changes the direction of the end face contact pressure (potentially causing compression or relaxation), and the change in contact state, in turn, affects the heat conduction path. The product is multiplied by 1 to obtain the overall multiplier, ensuring the correction factor is always positive. Then, it is multiplied by EPI for the final scaling: EPI directly reflects the end face contact pressure; the closer the pressure is to the ideal value (EPI→1), the closer the ECCF is to the theoretical value; when the pressure is insufficient (EPI<1), the ECCF decreases proportionally. It should be noted that in a normal temperature production line... This option can be removed; a configurable switch can be set to remove it for normal temperature scenarios. This calculation is performed when the temperature change scenario is activated. This calculation balances simplicity and completeness.
[0042] Thus, through the end-face contact correction coefficient acquisition unit provided in this embodiment, the signal phase disturbance, transient thermal expansion disturbance, inherent impedance deviation, and end-face contact pressure index are fused into a single correction coefficient ECCF. This coefficient is used to characterize the proportional deviation between the measured S-parameters and the true S-parameters under the current end-face contact state. The smaller the ECCF, the greater the distortion of the test results by the contact state, providing a multiplicative compensation benchmark for subsequent test data correction.
[0043] Example 4, as Figures 1 to 6 As shown, based on Embodiment 3, the contact state iteration factor acquisition unit provided in this embodiment of the invention is used to acquire the equivalent axial clearance EGL of the current calibration cycle and the reference equivalent axial clearance EGL. ref The ratio, end face contact correction factor ECCF, and radial offset TIO via groove 13 radius R cav The corrected joint penalty factor, and the insulator offset DSO and reference insulator offset DSO for the current calibration period. ref The ratio of these three factors is used to fuse the contact state iteration factor (CSIF), which is then used to update the baseline equivalent axial clearance (EGL). ref .
[0044] In this embodiment, the reference equivalent axial clearance EGL ref and reference insulator offset DSO ref All values are reference values stored in the system during factory calibration or initial system calibration.
[0045] The specific quantization method of the contact state iteration factor CSIF is as follows: ; In the formula: CSIF is the contact state iteration factor, EGL ref As the reference equivalent axial clearance, DSO ref This is the offset of the reference insulator; In the above formula, It is the ratio of the current state of the end face clearance to the reference. A ratio greater than 1 indicates that the current end face clearance is larger than when it left the factory (wear or insufficient pressure), and a ratio less than 1 indicates that the clearance is smaller (possibly due to over-tightening or thermal expansion). It is a combined penalty factor for end-face contact quality and eccentricity: The smaller the ECCF (the worse the contact), the smaller the denominator, the larger the overall fraction value, indicating that a larger correction is needed; This is the relative eccentricity (dimensionless) of the T-shaped head within groove 13. The greater the eccentricity, the larger this term. The larger the value of ECCF, the larger the denominator, and the smaller the overall fraction value. It's important to note that ECCF and... It is a multiplicative relationship, not an additive one, because ECCF reflects the axial contact quality (end face clearance + pressure + thermal effect). This reflects the radial alignment quality (alignment accuracy of guide fixture 3), which are physically independent but jointly affect signal transmission quality. Taking the reciprocal, this factor reflects that when both axial contact and radial alignment are ideal (ECCF tends to 1, TIO tends to 0), the factor is close to 1; when either deteriorates, the factor deviates from 1. It is the ratio of the current state of the insulator offset to the reference: DSO and DSO ref Both measurements were obtained through optical projection measurements of the first insulator 6 and the second insulator 7. This ratio reflects the permanent deformation of the insulator due to aging creep or temperature cycling after long-term use. This ratio, as a multiplier, is multiplied by the end-face gap ratio (EGL ratio) to reflect the combined effect of two independent degradation factors.
[0046] Understandably, CSIF is an iterative feedback factor. The closer CSIF is to 1, the better the overall condition of the tooling, the more standardized the test operation, and the more reliable the measurement results. The further CSIF deviates from 1, the more the tooling needs maintenance or the operation needs adjustment. Specifically, when CSIF > 1, it is a positive deviation, which is the most common degradation mode, usually corresponding to end face wear or insufficient contact pressure. When CSIF < 1, it is a negative deviation, meaning that the current test condition looks better than the factory reference, but in reality, it often means that the factory reference setting is unreasonable or that a certain sensor (such as a pressure-sensitive film gasket) has drifted, requiring investigation and recalibration.
[0047] More importantly, when the CSIF deviates from 1 by more than a preset threshold (e.g., greater than 1.15 or less than 0.85), the system issues a maintenance prompt and troubleshoots according to priority: operation method → end face wear → insulator offset → guide fixture wear → recalibrate the reference. Each step has a corresponding inspection method and maintenance measures.
[0048] Thus, the contact state iteration factor acquisition unit provided in this embodiment multiplies the end face gap ratio, the reciprocal of the correction coefficient, the joint penalty factor of the eccentricity, and the insulator offset ratio to generate the contact state iteration factor CSIF. This factor comprehensively reflects the overall degradation degree of the tooling and provides a quantitative basis for the adaptive update of the subsequent benchmark value.
[0049] Example 5, as Figure 6 As shown, based on Example 4, the contact state iteration factor CSIF provided in this embodiment of the invention modifies the reference equivalent axial clearance EGL. ref The feedback update adopts a damped update method, and the specific calculation formula for the update is as follows: EGL ref(n+1) =EGL ref(n) ×[1+λ×(CSIF (n) -1)], Among them, EGL ref(n+1) EGL is the baseline equivalent axial clearance for the (n+1)th test. ref(n) CSIF is the reference equivalent axial clearance for the nth test. (n) λ is the contact state iteration factor for the nth test, and λ is the damping factor. The value of the damping factor λ ranges from 0 to 1, with λ=0.15 being preferred.
[0050] In this embodiment, the damping update method is configured with a dual-threshold strategy. Specifically, the update operation for the reference equivalent axial clearance is only performed when the normalized value of the contact state iteration factor CSIF deviates from 1 by a factor exceeding a first preset threshold (e.g., |CSIF-1|>0.08) and this threshold is exceeded multiple times consecutively (e.g., three times consecutively). If the CSIF deviation does not exceed the preset threshold, or if it does exceed it but not multiple times consecutively, the system determines it as a random disturbance and does not trigger an update, thus preventing the reference value from being incorrectly adjusted due to a single abnormal clamping.
[0051] Understandably, the value of the damping factor λ determines the speed at which the benchmark value tracks the degradation trend. An excessively large λ value may cause the benchmark value to be overly sensitive to short-term fluctuations, while an excessively small value will fail to effectively track long-term degradation trends. Extensive experimental verification has shown that λ=0.15 can effectively track slow degradation processes such as end-face wear and insulator creep without affecting the stability of a single test. The dual-threshold strategy further filters out the impact of occasional operational fluctuations on the benchmark value, ensuring that the benchmark value is only updated when there is a substantial change in the tooling condition.
[0052] Thus, through the damping update method and dual threshold strategy provided in this embodiment, the tooling calibration benchmark can adaptively track the long-term degradation trend, automatically compensate to maintain accuracy when there is slight degradation, and actively warn and clearly indicate the specific parts that need to be checked when there is severe degradation, thereby significantly extending the maintenance-free cycle of the tooling and reducing batch test errors caused by calibration benchmark drift.
[0053] In Example 6, during the actual testing process, after the test operator mates the connector body 1 with the test fixture 2, the end-face contact pressure index (EPI) is first read using the pressure-sensitive film gasket. Simultaneously, the radial offset (TIO) is obtained using the sensor on the guide fixture 3, and the insulator offset (DSO) is obtained through optical projection measurement. This data acquisition process is completed instantly upon docking (within approximately 0.5 seconds) and does not affect the test cycle.
[0054] Subsequently, the signal phase disturbance acquisition unit calculates the SPD according to the formula in Example 2 based on the collected EGL, TIO, DSO, and EPI. This SPD value reflects in real time the degree of influence of the end face contact on the high-frequency signal phase under the current clamping state. If the SPD value exceeds the phase error tolerance threshold set by the system (e.g., 3°), the system automatically prompts the operator to re-clamp, avoiding invalid testing under poor contact conditions.
[0055] After the operator confirms the clamping status, the end face contact correction coefficient acquisition unit calculates the current SPD and the reference SPD. ref The ratio of the thermocouple feedback TTD to the TTD max The ratio, combined with the inherent impedance deviation of the tooling and EPI, is used to calculate the ECCF according to the formula in Example 3. After reading the original S-parameters, the vector network analyzer of the test system uses the ECCF as a multiplicative correction factor to correct the phase and amplitude of the S-parameters, obtaining the corrected S-parameters after end-face contact state compensation. This effectively separates the error components introduced by the clamping operation, enabling operators to accurately determine whether the quality of the connector under test is qualified.
[0056] During continuous testing, the contact state iteration factor acquisition unit periodically (e.g., every 50 tests) calculates the CSIF value and, based on the damping update method and dual threshold strategy in Example 5, decides whether to update the EGL stored in the system. ref Value. When CSIF continuously deviates from 1 and exceeds the preset threshold, the system issues a graded maintenance prompt, instructing the operator to check the end face wear, the position of the insulator, or the alignment accuracy of the guide fixture 3.
[0057] Understandably, during the entire rapid testing process, operators only need to perform two actions: insertion and clamping. The quantification, compensation, and baseline adaptive update of all contact state errors are automatically completed by the system without manual intervention. This not only ensures the high cycle time requirements of production line testing but also significantly improves the accuracy and repeatability of testing through algorithm compensation mechanisms, solving the technical problem of unreliable test results due to clamping differences in traditional solutions.
[0058] Thus, the complete testing process provided in this embodiment achieves fully automated processing across the entire chain, from mechanical docking, signal acquisition, error compensation to benchmark updates, ensuring the efficiency, accuracy, and long-term stability of the connector rapid testing fixture in mass production testing.
[0059] Example 7, based on the above embodiments, further provides a verification and calibration mechanism for the end-face contact pressure index (EPI). Since the EPI is obtained through a pressure-sensitive film gasket positioned between the end faces of the first outer conductor 8 and the third outer conductor 11, this gasket may undergo plastic deformation or sensitivity drift after long-term repeated pressure. Therefore, this embodiment performs a rapid pressure calibration procedure before each batch of tests begins.
[0060] The calibration procedure includes: replacing the connector body 1 under test with a standard calibration piece (e.g., a mismatched load or open circuit calibration piece) with a known, well-defined impedance characteristic; tightening it with the rated pressure (design recommendation); reading the output value of the pressure-sensitive film gasket; and calibrating this output value as the reference point EPI=1.0. If the calculated SPD deviates from the SPD at this point... ref If the deviation exceeds the preset limit (e.g., 1.5°), it is determined that the condition of the pressure-sensitive film gasket or tooling end face has changed significantly, and the system automatically enters the correction mode: based on the measured SPD and SPD... ref The deviation is adjusted by reversing the calibration coefficient of EPI to bring the SPD back to near the baseline. This correction process is completed within 1 minute and does not significantly affect the production line test cycle time.
[0061] Understandably, this pressure calibration mechanism works in conjunction with the reference value damping update mechanism in Example 5 to dynamically maintain the test system from two dimensions: pressure sensing accuracy and reference gap adaptability, further improving the system's robustness and reliability in long-term use. The adjustment records of the pressure-sensitive film gasket calibration coefficients are stored in the system log for quality traceability and analysis.
[0062] Thus, the EPI verification and calibration mechanism provided in this embodiment effectively solves the problem of sensitivity drift after long-term use of the pressure-sensitive film gasket, ensures the long-term accuracy of the end-face contact pressure index (EPI), and provides reliable pressure input data for the calculation of signal phase disturbance (SPD) and end-face contact correction coefficient (ECCF).
[0063] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A connector rapid testing fixture, characterized in that, The connector includes a connector body (1) and a test fixture (2). Both the connector body (1) and the test fixture (2) are provided with a first outer conductor (8). The connector body (1) is also provided with a second outer conductor (9) and a first inner conductor (10). The test fixture (2) is also provided with a third outer conductor (11) and a second inner conductor (12). The first outer conductor (8) and the third outer conductor (11) are in back-to-back end-face contact. The tail of the first inner conductor (10) is set with a T-shaped structure. The end face of the third outer conductor (11) is provided with a groove (13). The T-shaped structure is inserted into the groove (13). The end face of the first inner conductor (10) is in contact with the end face of the second inner conductor (12). The connector rapid test fixture also includes a signal phase disturbance acquisition unit, an end face contact correction coefficient acquisition unit, and a contact state iteration factor acquisition unit. The signal phase disturbance acquisition unit is used to obtain the signal phase disturbance based on the contact state parameters; The end face contact correction coefficient acquisition unit is used to obtain the end face contact correction coefficient based on the ratio of the signal phase disturbance to the reference signal phase disturbance, as well as the thermal state parameters and inherent impedance deviation of the tooling. The contact state iteration factor acquisition unit is used to obtain the contact state iteration factor based on the joint penalty factor associated with the groove (13) and the deviation between the current test state and the reference state. The contact state iteration factor is used to update the reference equivalent axial clearance. In the signal phase disturbance acquisition unit, the contact state parameters include the equivalent axial gap between the end face of the first outer conductor (8) and the end face of the third outer conductor (11), the radial offset of the T-shaped structure relative to the center line of the groove (13), and the insulator offset and end face contact pressure index of the first insulator (6) and the second insulator (7) in the connector body (1). The radial offset is squared and then divided by twice the radius of the groove (13) to obtain the equivalent axial clearance increment. The equivalent axial clearance increment is then added to the equivalent axial clearance and the insulator offset to obtain the equivalent total axial clearance. Multiplying the equivalent total axial clearance by the phase conversion factor of signal transmission yields the preliminary phase disturbance. The product of the end face contact pressure index and the temperature correction term is obtained, and the reciprocal is taken to obtain the contact quality correction factor. The initial phase disturbance is multiplied by the contact quality correction factor to obtain the signal phase disturbance. The temperature correction term is the base value plus the product of the linear expansion coefficient of the tooling material and the temperature difference. The specific quantization method of the signal phase perturbation (SPD) is as follows: ; In the formula: SPD is the signal phase perturbation, f is the test frequency, c is the speed of light in vacuum, and ε r R is the relative permittivity of the first insulator 6 and the second insulator 7, EGL is the equivalent axial gap, TIO is the radial offset of the first inner conductor 10T-type structure, and R cav denoted as the radius of groove 13, DSO as the insulator offset, EPI as the end-face contact pressure index, a as the linear expansion coefficient of the materials of the first outer conductor 8 and the third outer conductor 11, and ΔT as the temperature difference between the current temperature and the 25°C reference temperature.
2. The connector rapid testing fixture according to claim 1, characterized in that, The phase conversion factor is determined by the test frequency, the speed of light in vacuum, and the relative permittivity of the first insulator (6) and the second insulator (7), specifically by dividing the test frequency by the speed of light in vacuum by the square root of the relative permittivity.
3. The connector rapid testing fixture according to claim 1, characterized in that, In the end face contact correction coefficient acquisition unit, the thermal state parameters include transient thermal expansion disturbance and maximum thermal expansion disturbance threshold. The inherent impedance deviation of the tooling is obtained by dividing the standard characteristic impedance by an impedance calculation quantity determined by vacuum permeability, vacuum dielectric constant, the inner diameter of the first outer conductor (8) and the third outer conductor (11), and the outer diameter of the first inner conductor (10) and the second inner conductor (12). The phase-temperature coupling term is obtained by fusing the ratio of the signal phase perturbation to the reference signal phase perturbation and the ratio of the transient thermal expansion perturbation to the maximum thermal expansion perturbation threshold. The end-face contact correction coefficient is obtained by multiplying the inherent impedance deviation, the phase temperature coupling term, and the end-face contact pressure index.
4. The connector rapid testing fixture according to claim 3, characterized in that, The process of obtaining the transient thermal expansion disturbance includes: A thermocouple is installed on the outer wall of the third outer conductor (11) to obtain the temperature difference between two consecutive tests, divided by the ratio of the test time interval to the reference temperature, and converted into a percentage.
5. A connector rapid testing fixture according to claim 3, characterized in that, In the contact state iteration factor acquisition unit, the joint penalty factor is obtained by taking the reciprocal of the product of the end face contact correction coefficient and a radial offset correction term; The current test state and reference state include the equivalent axial clearance and reference equivalent axial clearance of the current calibration cycle, as well as the insulator offset and reference insulator offset of the current calibration cycle. The contact state iteration factor is obtained by multiplying the ratio of the equivalent axial clearance of the current calibration cycle to the reference equivalent axial clearance, the joint penalty factor, and the ratio of the insulator offset of the current calibration cycle to the reference insulator offset.
6. The connector rapid testing fixture according to claim 1, characterized in that, The feedback update of the contact state iteration factor for the reference equivalent axial clearance adopts a damped update method, and the specific calculation formula for the update is as follows: EGL ref(n+1) =EGL ref(n) ×[1+λ×(CSIF (n) -1)]; Among them, EGL ref(n+1) EGL is the baseline equivalent axial clearance for the (n+1)th test. ref(n) CSIF is the reference equivalent axial clearance for the nth test. (n) Let λ be the contact state iteration factor for the nth test, and let λ be the damping factor, wherein the value of the damping factor λ is in the range of 0 < λ < 1.
7. A connector rapid testing fixture according to claim 6, characterized in that, The damping update method is configured with a dual threshold strategy, that is, the update operation of the reference equivalent axial clearance is only performed when the normalized value of the contact state iteration factor deviates from 1 by more than a preset threshold and exceeds the preset threshold in multiple consecutive tests.
8. The connector rapid testing fixture according to claim 1, characterized in that, It also includes a guide fixture (3), a flange (4) and a rubber ring (5). The guide fixture (3) is disposed at the docking point between the connector body (1) and the test fixture (2) to guide the T-shaped structure of the first inner conductor (10) into the groove (13) of the third outer conductor (11). The flange (4) is disposed on the test fixture (2) to fix the test fixture (2) to the test table. The rubber ring (5) is disposed at the contact surface between the connector body (1) and the test fixture (2).
9. A connector rapid testing fixture according to claim 1, characterized in that, A pressure-sensitive film pad for obtaining the contact pressure index of the end face is provided between the end face of the first outer conductor (8) and the end face of the third outer conductor (11).
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