Method for processing well test data for thin reservoirs with thief zones

Abstract

The application discloses a well test data processing method for a thief zone-containing thin-layer oil reservoir, and the method comprises the following steps: establishing a first percolation model of the non-thief zone and a second percolation model of the thief zone, wherein the percolation models are used for describing percolation mechanisms of the thief zone and the non-thief zone; performing equation coefficient standardization processing to obtain a first standardized percolation model and a second standardized percolation model; performing Laplace transformation to obtain a first transformed percolation model and a second transformed percolation model; simplifying based on the generalized coordinate formula to obtain a first simplified percolation model and a second simplified percolation model; and establishing an equivalent model of the thin-layer oil reservoir based on initial pressure, initial conditions, a first boundary condition, a second boundary condition, the first simplified percolation model and the second simplified percolation model. The technical scheme provided by the application can improve the rationality of theoretical percolation parameters of the thief zone-containing thin-layer oil reservoir.

Description

Technical Field

[0001] This application belongs to the field of development technology of thin-layer oil reservoirs containing burrows, and particularly relates to a method for processing well test data of thin-layer oil reservoirs containing burrows. Background Technology

[0002] The thin-layer reservoirs containing thieves exhibit strong heterogeneity. When water injection is performed on these reservoirs using horizontal wells, the presence of the thieves significantly alters the flow field of the surrounding thin-layer reservoirs. Consequently, the actual distribution of the seepage field around the horizontal well differs considerably from the theoretical distribution derived from well test data analysis. Therefore, it is difficult to adjust and guide water injection development of the horizontal wells based on the theoretical distribution of the seepage field. Consequently, improving the rationality of the theoretical seepage parameters for thin-layer reservoirs containing thieves is a pressing technical problem that needs to be solved. Summary of the Invention

[0003] The embodiments of this application provide a well test data processing method for thin-layer reservoirs containing burrowing layers, which can improve the rationality of theoretical seepage parameters for thin-layer reservoirs containing burrowing layers.

[0004] Other features and advantages of this application will become apparent from the following detailed description, or may be learned in part from practice of this application.

[0005] According to a first aspect of the embodiments of this application, a method for processing well test data of a thin-layer reservoir containing a "thief layer" is provided. The method comprises: acquiring well test data of horizontal wells in the thin-layer reservoir; dividing the thin-layer reservoir into a non-thief layer and a thief layer based on the well test data; establishing a first seepage model for the non-thief layer and a second seepage model for the thief layer, the seepage models being used to describe the seepage mechanisms of the thief layer and the non-thief layer; standardizing the equation coefficients of the first seepage model and the second seepage model respectively to obtain a first standardized seepage model for the non-thief layer and a second standardized seepage model for the thief layer; performing Laplace transforms on the first standardized seepage model and the second standardized seepage model respectively to obtain a first transformed seepage model for the non-thief layer and a second transformed seepage model for the thief layer; and constructing a generalized... The coordinate formula is used to simplify the first transformed seepage model and the second transformed seepage model based on the generalized coordinate formula, respectively, to obtain the first simplified seepage model of the non-thief layer and the second simplified seepage model of the thief layer. The generalized coordinate formula is used to transform the thief layer into a homogeneous reservoir of equivalent thickness. The initial pressure of the thin-layer reservoir is obtained, and the initial conditions of the first seepage model and the second seepage model, the first boundary conditions of the top and bottom of the thin-layer reservoir, and the second boundary conditions of the interface between the thief layer and the non-thief layer are determined. Based on the initial pressure, the initial conditions, the first boundary conditions, the second boundary conditions, the first simplified seepage model and the second simplified seepage model, an equivalent model of the thin-layer reservoir is established. The equivalent model is used to calculate the theoretical seepage parameters of the thin-layer reservoir.

[0006] In some embodiments of this application, based on the foregoing scheme, the method further includes: determining the theoretical seepage parameters of the thin-layer reservoir based on the equivalent model; obtaining the actual seepage parameters of the thin-layer reservoir and determining the error value between the theoretical seepage parameters and the actual seepage parameters; if the error value is greater than a preset error value, updating the equivalent model using a preset algorithm tool to obtain an optimized equivalent model, using the optimized equivalent model as a new equivalent model, and performing the step of determining the theoretical seepage parameters of the horizontal well based on the equivalent model until the error value is less than the preset error value; using the finally obtained theoretical seepage parameters as guiding seepage parameters, which are used to guide the actual production of the horizontal well in the thin-layer reservoir.

[0007] In some embodiments of this application, based on the foregoing scheme, the first seepage model is:

[0008]

[0009] The second seepage model is:

[0010]

[0011] Where p1 represents the formation pressure within the non-thief layer, p2 represents the formation pressure within the thief layer, and k h1 k represents the horizontal permeability of the non-thief layer. h2 k represents the horizontal permeability of the thief layer. v1 k represents the vertical permeability of the non-thief layer. v2 This indicates the vertical permeability of the burial layer. The value represents reservoir porosity, μ represents fluid viscosity, and C represents the viscosity of the fluid. t t represents the overall compression coefficient, and t represents time.

[0012] In some embodiments of this application, based on the foregoing scheme, the first standardized seepage model is:

[0013]

[0014] The second standardized seepage model is:

[0015]

[0016] in,

[0017]

[0018] p1 represents the formation pressure within the non-thief layer, p2 represents the formation pressure within the thief layer, and k h1 k represents the horizontal permeability of the non-thief layer. h2 This indicates the horizontal permeability of the thief layer. The value represents reservoir porosity, μ represents fluid viscosity, and C represents the viscosity of the fluid. t The coefficient of compressibility is represented by η, t represents time, η1 represents the pressure conductivity coefficient of the non-burrowing layer, η2 represents the pressure conductivity coefficient of the burrowing layer, β represents the ratio of vertical permeability to horizontal permeability, and z represents the overall compressibility coefficient. * This represents the normalized ordinate.

[0019] In some embodiments of this application, based on the foregoing scheme, the first transformed seepage model is:

[0020]

[0021] The second transformation seepage model is:

[0022]

[0023] in, This represents the reservoir pressure within the non-pirate layer after the transformation. The transformed reservoir pressure is represented by η1, where η1 represents the pressure conductivity coefficient of the non-seized layer, η2 represents the pressure conductivity coefficient of the seized layer, and z represents the pressure conductivity coefficient of the seized layer.* represents the normalized ordinate, and s represents the Laplace variable.

[0024] In some embodiments of this application, based on the foregoing scheme, the generalized coordinate formula is:

[0025]

[0026]

[0027] Wherein, η1 represents the pressure conductivity coefficient of the non-thief layer, η2 represents the pressure conductivity coefficient of the thief layer, z0 represents the thickness from the bottom of the thin-layer reservoir to the interface between the thief layer and the non-thief layer, and h represents the initial formation thickness of the thin-layer reservoir.

[0028] In some embodiments of this application, based on the foregoing scheme, the first simplified seepage model is:

[0029]

[0030] The second simplified seepage model is:

[0031]

[0032] in, This represents the reservoir pressure within the non-pirate layer after the transformation. represents the transformed reservoir pressure within the stratum, and s represents the Laplace variable.

[0033] In some embodiments of this application, based on the foregoing scheme, determining the initial conditions of the first seepage model and the second seepage model, the first boundary conditions of the top and bottom of the thin-layer reservoir, and the second boundary conditions of the interface between the thief layer and the non-thief layer includes:

[0034] The initial conditions for the first seepage model and the second seepage model are as follows:

[0035] p1(x,y,z,t=0)=p2(x,y,z,t=0)=p0

[0036] p1(x→∞,y→∞,z,t)=p2(x→∞,y→∞,z,t)=p0

[0037] The first boundary conditions for the top and bottom of the thin-layer reservoir are:

[0038]

[0039] (z=0∪z=h)

[0040] The second boundary condition of the interface between the thief layer and the non-thief layer is:

[0041] p1(x,t,z=z0,t)=p2(x,y,z=z0,t)

[0042]

[0043] Where p1 represents the formation pressure within the non-thief layer, p2 represents the formation pressure within the thief layer, p0 represents the initial pressure of the thin-layer reservoir, and k v1 k represents the vertical permeability of the non-thief layer. v2 z0 represents the vertical permeability of the burrowing layer, z0 represents the thickness from the bottom of the thin reservoir to the interface between the burrowing layer and the non-burrowing layer, h represents the initial formation thickness of the thin reservoir, t represents time, μ1 represents the fluid viscosity of the non-burrowing layer, and μ2 represents the fluid viscosity of the burrowing layer.

[0044] In some embodiments of this application, based on the foregoing scheme, the equivalent model of the thin-layer reservoir is as follows:

[0045]

[0046] Where p represents the formation pressure at any point in the thin-layer reservoir, p0 represents the initial pressure of the thin-layer reservoir, and L represents the length of the horizontal well.

[0047] In some embodiments of this application, based on the foregoing scheme, the method further includes: determining whether the well test data is reasonable; if the well test data is reasonable, then performing the steps of establishing the first seepage model of the non-thief layer and the second seepage model of the thief layer respectively.

[0048] According to a second aspect of the embodiments of this application, a computer program product is provided, the computer program product including computer instructions stored in a computer-readable storage medium and adapted to be read and executed by a processor to cause a computer device having the processor to perform an operation as described in any of the embodiments of the first aspect above.

[0049] According to a third aspect of the embodiments of this application, a computer-readable storage medium is provided, the computer-readable storage medium storing at least one computer program instruction, the at least one computer program instruction being loaded and executed by a processor to perform the operation performed by the method described in any of the embodiments of the first aspect above.

[0050] According to a fourth aspect of the present application, an electronic device is provided, the electronic device including one or more processors and one or more memories, the one or more memories storing at least one computer program instruction, the at least one computer program instruction being loaded and executed by the one or more processors to perform the operation performed by the method as described in any of the embodiments of the first aspect above.

[0051] Based on the technical solution proposed in this application, firstly, by analyzing well test data from horizontal wells in thin-layer reservoirs, the thin-layer reservoirs can be divided into non-thief layers and thief layers, and a first seepage model and a second seepage model can be established respectively. This helps to more accurately describe and understand the seepage mechanism in different regions, thereby improving the accuracy and rationality of the seepage model. Secondly, by standardizing the equation coefficients of the first and second seepage models, the seepage model can be made more versatile, which helps to simplify subsequent mathematical calculations and model solution processes, further improving the rationality of the seepage model. Then, through By constructing a generalized coordinate formula to transform the burrowing layer in the thin-layer reservoir into a homogeneous reservoir of equivalent thickness, the difficulty of data processing can be further reduced, and the rationality of the theoretical seepage parameters of the thin-layer reservoir containing the burrowing layer can be improved. Finally, by using the initial pressure, the initial conditions, the first boundary conditions, the second boundary conditions, the first simplified seepage model, and the second simplified seepage model, an equivalent model of the thin-layer reservoir can be established. In this way, by considering comprehensive boundary conditions and seepage models, the accuracy and practicality of establishing the equivalent model can be effectively improved, thereby improving the rationality of the theoretical seepage parameters of the thin-layer reservoir containing the burrowing layer.

[0052] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0053] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings:

[0054] Figure 1 A flowchart of a well test data processing method for a thin-layer oil reservoir containing a burrowing layer, according to one embodiment of this application, is shown.

[0055] Figure 2 This illustration shows a schematic diagram of a horizontal well in a thin-layered reservoir containing a burrowing layer, located in a simplified model, according to one embodiment of this application.

[0056] Figure 3 This invention illustrates a schematic diagram of the flow field distribution within a thin-layer reservoir when the horizontal well is located in a non-thief layer, according to one embodiment of this application.

[0057] Figure 4 A schematic diagram is shown in one embodiment of this application, illustrating the transformation of a thief layer into a homogeneous reservoir of equivalent thickness.

[0058] Figure 5 A comparison graph showing measured data, an equivalent model, and a conventional homogeneous model in one embodiment of this application is illustrated.

[0059] Figure 6 A schematic diagram of the structure of an electronic device according to one embodiment of this application is shown. Detailed Implementation

[0060] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0061] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0062] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically independent entities. That is, these functional entities can be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processor devices and / or microcontroller devices.

[0063] The flowcharts shown in the accompanying drawings are merely illustrative and do not necessarily include all content and operations / steps, nor do they necessarily have to be performed in the described order. For example, some operations / steps can be broken down, while others can be combined or partially combined; therefore, the actual execution order may change depending on the specific circumstances.

[0064] It should also be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such uses of these terms can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described.

[0065] To enable those skilled in the art to better understand this application, the following will briefly explain the thief layer and the non-thief layer proposed in this application.

[0066] The thin-layer reservoir containing the thief layer exhibits strong heterogeneity. When water injection is performed on the thin-layer reservoir containing the thief layer using horizontal wells, the presence of the thief layer significantly alters the flow field of the nearby thin-layer reservoir. Consequently, the actual distribution of the seepage field around the horizontal well differs considerably from the theoretical distribution obtained through well test data analysis. Therefore, it is difficult to adjust and guide the horizontal well for water injection development based on the theoretical distribution of the seepage field. Based on this, this application proposes a well test data processing method for thin-layer reservoirs containing the thief layer to improve the rationality of the theoretical seepage parameters of thin-layer reservoirs containing the thief layer.

[0067] Next, we will combine Figure 1 This application provides a detailed description of the well test data processing method for thin-layer oil reservoirs containing burrowing layers.

[0068] See Figure 1 This document illustrates a flowchart of a well test data processing method for a thin-layered reservoir containing a burrowing layer, according to one embodiment of this application. The method can be executed by a device with computational processing capabilities, such as... Figure 1 As shown, the method may include at least steps 110 to 160:

[0069] Step 110: Obtain well test data of horizontal wells in the thin-layer reservoir. Based on the well test data, divide the thin-layer reservoir into non-thief layers and thief layers, and establish a first seepage model for the non-thief layers and a second seepage model for the thief layers. The seepage models are used to describe the seepage mechanism of the thief layers and the non-thief layers.

[0070] Step 120: Standardize the equation coefficients of the first seepage model and the second seepage model respectively to obtain the first standardized seepage model of the non-thief layer and the second standardized seepage model of the thief layer.

[0071] Step 130: Perform Laplace transform on the first standardized seepage model and the second standardized seepage model respectively to obtain the first transformed seepage model of the non-thief layer and the second transformed seepage model of the thief layer.

[0072] Step 140: Construct a generalized coordinate formula, and based on the generalized coordinate formula, simplify the first transformed seepage model and the second transformed seepage model respectively to obtain the first simplified seepage model of the non-thief layer and the second simplified seepage model of the thief layer. The generalized coordinate formula is used to transform the thief layer into a homogeneous reservoir of equivalent thickness.

[0073] Step 150: Obtain the initial pressure of the thin-layer reservoir, and determine the initial conditions of the first seepage model and the second seepage model, the first boundary conditions of the top and bottom of the thin-layer reservoir, and the second boundary conditions of the interface between the thief layer and the non-thief layer.

[0074] Step 160: Based on the initial pressure, the initial conditions, the first boundary conditions, the second boundary conditions, the first simplified seepage model, and the second simplified seepage model, establish an equivalent model of the thin-layer reservoir. The equivalent model is used to calculate the theoretical seepage parameters of the thin-layer reservoir.

[0075] Please refer to the following in this application: Figure 2 and Figure 3 ,like Figure 2 As shown, a simplified model of a horizontal well in a thin reservoir containing a burrowing layer is illustrated in one embodiment of this application; wherein, Figure a) shows a simplified model of a horizontal well test in a burrowing layer, and Figure b) shows a simplified model of a horizontal well test outside of a burrowing layer, as shown. Figure 3 The figure shows a schematic diagram of the flow field distribution in the thin reservoir when the horizontal well is located in a non-thief layer in one embodiment of this application. It can be seen from the figure that the flow field distribution in the high-permeability layer (i.e., the thief layer) is more concentrated than the flow field distribution in the non-thief layer.

[0076] In this application, firstly, by analyzing well test data from horizontal wells in thin-layer reservoirs, the reservoirs can be divided into non-thief layers and thief layers, and a first seepage model and a second seepage model can be established respectively. This helps to more accurately describe and understand the seepage mechanism in different regions, thereby improving the accuracy and rationality of the seepage models. Secondly, by standardizing the equation coefficients of the first and second seepage models, the seepage models can be made easier to process, which helps to simplify subsequent mathematical calculations and model solution processes, further improving the rationality of the seepage models. Then, by constructing a generalized... The coordinate formula transforms the burrowing layer in the thin-layer reservoir into a homogeneous reservoir of equivalent thickness, which can further reduce the difficulty of data processing and improve the rationality of the theoretical seepage parameters of the thin-layer reservoir containing the burrowing layer. Finally, through the initial pressure, the initial conditions, the first boundary conditions, the second boundary conditions, the first simplified seepage model, and the second simplified seepage model, an equivalent model of the thin-layer reservoir is established. In this way, by considering comprehensive boundary conditions and seepage models, the accuracy and practicality of establishing the equivalent model can be effectively improved, thereby improving the rationality of the theoretical seepage parameters of the thin-layer reservoir containing the burrowing layer.

[0077] In the technical solution proposed in this application, the method can also be performed according to the following steps 210 to 240:

[0078] Step 210: Based on the equivalent model, determine the theoretical seepage parameters of the thin-layer reservoir.

[0079] Step 220: Obtain the actual seepage parameters of the thin-layer reservoir and determine the error value between the theoretical seepage parameters and the actual seepage parameters.

[0080] Step 230: If the error value is greater than the preset error value, the equivalent model is updated using a preset algorithm tool to obtain an optimized equivalent model. The optimized equivalent model is used as the new equivalent model, and the step of determining the theoretical seepage parameters of the horizontal well based on the equivalent model is executed until the error value is less than the preset error value.

[0081] Step 240: The final theoretical seepage parameters are used as guiding seepage parameters, which are used to guide the actual production of the horizontal wells in the thin-layer reservoir.

[0082] In this application, the preset algorithm tool may specifically be the Levenberg-Marquardt algorithm, or other algorithms with optimized model fitting parameters, depending on actual needs. This application does not make any specific limitations on this.

[0083] In this application, the theoretical seepage parameters of the thin-layer reservoir are determined through the equivalent model, and the error value between the theoretical seepage parameters and the actual seepage parameters is determined. Based on this, it can be determined whether the theoretical seepage parameters are reasonable, and thus whether the equivalent model is reasonable. If the error value is greater than the preset error value, it indicates that the theoretical seepage parameters are unreasonable, that is, the equivalent model is not perfect. The equivalent model can be optimized through the preset algorithm tool to improve the rationality of the theoretical seepage parameters obtained through the equivalent model, so as to more accurately guide the actual production of the horizontal wells in the thin-layer reservoir through the theoretical seepage parameters.

[0084] In step 110 above, the first seepage model (1) can specifically be:

[0085]

[0086] The second seepage model (2) can specifically be:

[0087]

[0088] Where p1 represents the formation pressure within the non-thief layer, p2 represents the formation pressure within the thief layer, and k h1 k represents the horizontal permeability of the non-thief layer. h2 k represents the horizontal permeability of the thief layer. v1 k represents the vertical permeability of the non-thief layer. v2 This indicates the vertical permeability of the burial layer. The value represents reservoir porosity, μ represents fluid viscosity, and C represents the viscosity of the fluid. t t represents the overall compression coefficient, and t represents time.

[0089] In this application, the first seepage model and the second seepage model are specifically based on the actual situation of thin-layer oil reservoirs containing thieves, dividing the thin-layer oil reservoir into thieves and non-thieves layers, and then respectively based on... Figure 1 The horizontal well seepage model was established based on the well test data shown.

[0090] In this application, by establishing a first seepage model and a second seepage model, it is helpful to more accurately describe and understand the seepage mechanism in different regions, thereby improving the rationality of the theoretical seepage parameters for the thin-layer oil reservoir containing the burrow.

[0091] In step 120 above, the first standardized seepage model (3) is:

[0092]

[0093] The second standardized seepage model (4) is:

[0094]

[0095] in,

[0096]

[0097] p1 represents the formation pressure within the non-thief layer, p2 represents the formation pressure within the thief layer, and k h1 k represents the horizontal permeability of the non-thief layer. h2 This indicates the horizontal permeability of the thief layer. The value represents reservoir porosity, μ represents fluid viscosity, and C represents the viscosity of the fluid. t The coefficient of compressibility is represented by η, t represents time, η1 represents the pressure conductivity coefficient of the non-burrowing layer, η2 represents the pressure conductivity coefficient of the burrowing layer, β represents the ratio of vertical permeability to horizontal permeability, and z represents the overall compressibility coefficient. * This represents the normalized ordinate.

[0098] In this application, let

[0099]

[0100] Substituting equations (7) and (8) into the first seepage model (1) and the second seepage model (2), and performing equation coefficient standardization, we can obtain the first standardized seepage model (3) and the second standardized seepage model (4).

[0101] In this application, by standardizing the equation coefficients of the first seepage model and the second seepage model, a first standardized seepage model and a second standardized seepage model are obtained. This makes the seepage models easier to process and more universal, which helps to simplify subsequent mathematical operations and model solution processes, thereby effectively improving the rationality of the theoretical seepage parameters of the thin-layer oil reservoir containing the burrow.

[0102] In step 130 above, the first transformed seepage model (9) is:

[0103]

[0104] The second transformation seepage model (10) is:

[0105]

[0106] in, This represents the reservoir pressure within the non-criminal layer after the transformation; The transformed reservoir pressure is represented by η1, where η1 represents the pressure conductivity coefficient of the non-seized layer, η2 represents the pressure conductivity coefficient of the seized layer, and z represents the pressure conductivity coefficient of the seized layer. * represents the normalized ordinate, and s represents the Laplace variable.

[0107] In this application, by performing Laplace transform on the first standardized seepage model and the second standardized seepage model, the first transformed seepage model and the second transformed seepage model can be obtained. In this way, the accuracy of data processing can be further improved, thereby effectively improving the rationality of the theoretical seepage parameters of the thin-layer reservoir containing the burrow.

[0108] In step 140 above, the generalized coordinate formula can specifically include the following formulas (11) to (13).

[0109]

[0110] Wherein, η1 represents the pressure conductivity coefficient of the non-thief layer, η2 represents the pressure conductivity coefficient of the thief layer, z0 represents the thickness from the bottom of the thin-layer reservoir to the interface between the thief layer and the non-thief layer, and h represents the initial formation thickness of the thin-layer reservoir.

[0111] Please refer to the following in this application: Figure 4 The diagram illustrates how a thief layer is transformed into a homogeneous reservoir of equivalent thickness in one embodiment of this application. The generalized coordinate formula can transform the thief layer in the thin-layer reservoir containing the thief layer into a homogeneous reservoir of equivalent thickness. This can improve the accuracy of the analysis of the thief layer and reduce the difficulty of the analysis, thereby effectively improving the accuracy of data processing and, consequently, improving the rationality of the theoretical seepage parameters of the thin-layer reservoir containing the thief layer.

[0112] In step 140 above, the first simplified seepage model (14) is:

[0113]

[0114] The second simplified seepage model (15) is as follows:

[0115]

[0116] in, This represents the reservoir pressure within the non-criminal layer after the transformation; represents the transformed reservoir pressure within the stratum, and s represents the Laplace variable.

[0117] In this application, by simplifying the first variable seepage model and the second transformed seepage model according to the generalized coordinate formula, a first simplified seepage model and a second simplified seepage model are obtained. This can effectively improve the efficiency and accuracy of the data processing process, and at the same time improve the accuracy of the final equivalent model, thereby improving the rationality of the theoretical seepage parameters of the thin-layer oil reservoir containing the burrow.

[0118] In step 150 above, determining the initial conditions of the first and second seepage models, the first boundary conditions of the top and bottom of the thin reservoir, and the second boundary conditions of the interface between the thief layer and the non-thief layer can specifically include:

[0119] The initial conditions for the first seepage model and the second seepage model are as follows:

[0120] p1(x,y,z,t=0)=p2(x,y,z,t=0)=p0 (16)

[0121] p1(x→∞,y→∞,z,t)=p2(x→∞,y→∞,z,t)=p0 (17)

[0122] The first boundary conditions for the top and bottom of the thin-layer reservoir are:

[0123]

[0124] (z=0∪z=h) (19)

[0125] The second boundary condition of the interface between the thief layer and the non-thief layer is:

[0126] p1(x,t,z=z0,t)=p2(x,y,z=z0,t) (20)

[0127]

[0128] Where p1 represents the formation pressure within the non-thief layer, p2 represents the formation pressure within the thief layer, p0 represents the initial pressure of the thin-layer reservoir, and k v1 k represents the vertical permeability of the non-thief layer. v2 z0 represents the vertical permeability of the burrowing layer, z0 represents the thickness from the bottom of the thin reservoir to the interface between the burrowing layer and the non-burrowing layer, h represents the initial formation thickness of the thin reservoir, t represents time, μ1 represents the fluid viscosity of the non-burrowing layer, and μ2 represents the fluid viscosity of the burrowing layer.

[0129] In this application, the initial conditions of the first and second seepage models, the first boundary conditions of the top and bottom of the thin reservoir, and the second boundary conditions of the interface between the thief layer and the non-thief layer can more comprehensively consider various constraints in the data processing process, effectively improve the accuracy and practicality of the equivalent model establishment, and thus improve the rationality of the theoretical seepage parameters of thin reservoirs containing thief layers.

[0130] In step 160 above, the equivalent model of the thin-layer reservoir is:

[0131]

[0132] In this application, the equivalent model can specifically be a pressure expression at any point in the formation, or, depending on actual needs, an expression for formation permeability. This application does not impose any specific limitations on this.

[0133] In this application, the theoretical seepage parameters of the thin-layer reservoir containing the burrowing layer are determined by the equivalent model, which can effectively improve the accuracy of well test data processing for the thin-layer reservoir containing the burrowing layer. In turn, the theoretical seepage parameters can be used to accurately guide the water injection development of the reservoir containing the burrowing layer, thereby improving the rationality of the theoretical seepage parameters.

[0134] In the technical solution proposed in this application, the method may further perform the following step 101:

[0135] Step 101: Determine whether the well test data is reasonable. If the well test data is reasonable, then execute the steps of establishing the first seepage model of the non-thief layer and the second seepage model of the thief layer respectively.

[0136] In this application, by determining whether the well test data is reasonable, unreasonable data can be effectively avoided from affecting the determination of parameters of the subsequent equivalent model, thereby improving the accuracy of data processing and thus improving the rationality of the theoretical seepage parameters.

[0137] Next, we will combine Figure 5 The method proposed in this application will be described with reference to a specific embodiment.

[0138] like Figure 5 As shown, a comparison chart is presented between measured data, an equivalent model, and a conventional homogeneous model in one embodiment of this application.

[0139] from Figure 5 It can be concluded that the simulation results of the conventional homogeneous model differ significantly from the measured data in a short period of time, while the simulation results of the equivalent model can fit the measured data well throughout the entire simulation. This indicates that the equivalent model can effectively improve the rationality of the calculation of theoretical seepage parameters for the thin-layered reservoir containing the burrow.

[0140] Specifically, please refer to Table 1, which shows the theoretical seepage parameter results of a conventional homogeneous model and an equivalent model in one embodiment of this application.

[0141] Theoretical seepage parameters Conventional mean model Equivalent model Epidermal coefficient -3.66 0.21 Effective horizontal well section length (feet) 299.2 2624.67 Horizontal permeability of oil reservoir (millidarcy) 1.53 4.87 Vertical / lateral permeability ratio 1 1

[0142] Combination Figure 5 As shown in Table 1, the simulation results of the equivalent model can provide more accurate guidance for the horizontal well water injection development of the thin-layered oil reservoir containing the burrowing layer.

[0143] Based on the technical solution proposed in this application, firstly, by analyzing the well test data of horizontal wells in thin-layer reservoirs, the thin-layer reservoirs can be divided into non-thief layers and thief layers, and a first seepage model and a second seepage model can be established respectively. This helps to more accurately describe and understand the seepage mechanism in different regions, thereby improving the accuracy and rationality of the seepage model. Secondly, by standardizing the equation coefficients of the first and second seepage models, the seepage models can be made easier to process, which helps to simplify subsequent mathematical calculations and model solution processes, further improving the rationality of the seepage model. Then, by constructing... By establishing a generalized coordinate formula to transform the burrowing layer in the thin-layer reservoir into a homogeneous reservoir of equivalent thickness, the difficulty of data processing can be further reduced, and the rationality of the theoretical seepage parameters of the thin-layer reservoir containing the burrowing layer can be improved. Finally, by using the initial pressure, the initial conditions, the first boundary conditions, the second boundary conditions, the first simplified seepage model, and the second simplified seepage model, an equivalent model of the thin-layer reservoir can be established. In this way, by considering comprehensive boundary conditions and seepage models, the accuracy and practicality of establishing the equivalent model can be effectively improved, thereby improving the rationality of the theoretical seepage parameters of the thin-layer reservoir containing the burrowing layer.

[0144] Based on the same inventive concept, embodiments of this application provide a computer program product, the computer program product including computer instructions stored in a computer-readable storage medium and adapted to be read and executed by a processor to cause a computer device having the processor to perform the operations performed as described above.

[0145] Based on the same inventive concept, embodiments of this application provide a computer-readable storage medium storing at least one computer program instruction, which is loaded and executed by a processor to perform the operations described above.

[0146] Figure 6 A schematic diagram of the structure of an electronic device according to one embodiment of this application is shown.

[0147] Based on the same inventive concept, embodiments of this application also provide an electronic device. (Reference) Figure 6 The diagram shows a schematic of the structure of an electronic device according to an embodiment of this application. The electronic device includes one or more memories 604, one or more processors 602, and at least one computer program (program code) stored in the memory 604 and executable on the processor 602. When the processor 602 executes the computer program, it implements the method described above.

[0148] Among them, Figure 6In this document, a bus architecture (represented by bus 600) is used. Bus 600 may include any number of interconnected buses and bridges, linking various circuits including one or more processors represented by processor 602 and memory represented by memory 604. Bus 600 may also link various other circuits such as peripheral devices, voltage regulators, and power management circuits, which are well known in the art and therefore will not be described further herein. Bus interface 605 provides an interface between bus 600 and receiver 601 and transmitter 603. Receiver 601 and transmitter 603 may be the same element, i.e., a transceiver, providing a unit for communicating with various other devices over a transmission medium. Processor 602 is responsible for managing bus 600 and general processing, while memory 604 can be used to store data used by processor 602 during operation.

[0149] The functions described herein may be implemented in hardware, software executed by a processor, firmware, or any combination thereof. If implemented in software executed by a processor, the functions may be stored as one or more instructions or codes on or transmitted via a computer-readable medium. Other examples and embodiments are within the scope and spirit of this application and the appended claims. For example, due to the nature of software, the functions described above may be implemented using software executed by a processor, hardware, firmware, hardwired, or any combination thereof. Furthermore, the functional units may be integrated into a single processing unit, or each unit may exist physically separately, or two or more units may be integrated into a single unit.

[0150] In the several embodiments provided in this application, it should be understood that the disclosed technical content can be implemented in other ways. The device embodiments described above are merely illustrative; for example, the division of units can be a logical functional division, and in actual implementation, there may be other division methods. For instance, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the displayed or discussed mutual coupling, direct coupling, or communication connection may be through some interfaces; the indirect coupling or communication connection between units or modules may be electrical or other forms.

[0151] The units described as separate components may or may not be physically separate. Similarly, the components of the control device may or may not be physical units; they may be located in one place or distributed across multiple units. Some or all of the units can be selected to achieve the purpose of this embodiment, depending on actual needs.

[0152] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as a USB flash drive, read-only memory (ROM), random access memory (RAM), portable hard drive, magnetic disk, or optical disk.

[0153] The above description is merely an embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A method for processing well test data in a thin-layer oil reservoir containing a burrowing layer, characterized in that, The method includes: Obtain well test data of horizontal wells in the thin-layer reservoir, divide the thin-layer reservoir into non-thief layer and thief layer based on the well test data, and establish a first seepage model for the non-thief layer and a second seepage model for the thief layer. The seepage models are used to describe the seepage mechanism of the thief layer and the non-thief layer. The equation coefficients of the first seepage model and the second seepage model are standardized to obtain the first standardized seepage model of the non-thief layer and the second standardized seepage model of the thief layer. The first standardized seepage model and the second standardized seepage model are subjected to Laplace transform to obtain the first transformed seepage model of the non-thief layer and the second transformed seepage model of the thief layer. A generalized coordinate formula is constructed, and based on the generalized coordinate formula, the first transformed seepage model and the second transformed seepage model are simplified respectively to obtain the first simplified seepage model of the non-thief layer and the second simplified seepage model of the thief layer. The generalized coordinate formula is used to transform the thief layer into a homogeneous reservoir of equivalent thickness. The initial pressure of the thin-layer reservoir is obtained, and the initial conditions of the first and second seepage models, the first boundary conditions of the top and bottom of the thin-layer reservoir, and the second boundary conditions of the interface between the thief layer and the non-thief layer are determined. Based on the initial pressure, the initial conditions, the first boundary conditions, the second boundary conditions, the first simplified seepage model, and the second simplified seepage model, an equivalent model of the thin-layer reservoir is established. The equivalent model is used to calculate the theoretical seepage parameters of the thin-layer reservoir.

2. The method according to claim 1, characterized in that, The method further includes: Based on the equivalent model, the theoretical seepage parameters of the thin-layer reservoir are determined; Obtain the actual seepage parameters of the thin-layer reservoir and determine the error value between the theoretical seepage parameters and the actual seepage parameters; If the error value is greater than the preset error value, the equivalent model is updated using a preset algorithm tool to obtain an optimized equivalent model. The optimized equivalent model is then used as the new equivalent model, and the step of determining the theoretical seepage parameters of the horizontal well based on the equivalent model is executed until the error value is less than the preset error value. The final theoretical seepage parameters are used as guiding seepage parameters, which are used to guide the actual production of horizontal wells in the thin-layer reservoir.

3. The method according to claim 1, characterized in that, The first seepage model is: The second seepage model is: Where p1 represents the formation pressure within the non-thief layer, p2 represents the formation pressure within the thief layer, and k h1 k represents the horizontal permeability of the non-thief layer. h2 k represents the horizontal permeability of the thief layer. v1 k represents the vertical permeability of the non-thief layer. v2 This indicates the vertical permeability of the burial layer. The value represents reservoir porosity, μ represents fluid viscosity, and C represents the viscosity of the fluid. t t represents the overall compression coefficient, and t represents time.

4. The method according to claim 1, characterized in that, The first standardized seepage model is: The second standardized seepage model is: in, p1 represents the formation pressure within the non-thief layer, p2 represents the formation pressure within the thief layer, and k h1 k represents the horizontal permeability of the non-thief layer. h2 This indicates the horizontal permeability of the thief layer. The value represents reservoir porosity, μ represents fluid viscosity, and C represents the viscosity of the fluid. t The coefficient of compressibility is represented by η, t represents time, η1 represents the pressure conductivity coefficient of the non-burrowing layer, η2 represents the pressure conductivity coefficient of the burrowing layer, β represents the ratio of vertical permeability to horizontal permeability, and z represents the overall compressibility coefficient. * This represents the normalized ordinate.

5. The method according to claim 1, characterized in that, The first transformation seepage model is: The second transformation seepage model is: in, This represents the reservoir pressure within the non-criminal layer after the transformation; The transformed reservoir pressure is represented by η1, where η1 represents the pressure conductivity coefficient of the non-seized layer, η2 represents the pressure conductivity coefficient of the seized layer, and z represents the pressure conductivity coefficient of the seized layer. * represents the normalized ordinate, and s represents the Laplace variable.

6. The method according to claim 1, characterized in that, The generalized coordinate formula is: Wherein, η1 represents the pressure conductivity coefficient of the non-thief layer, η2 represents the pressure conductivity coefficient of the thief layer, z0 represents the thickness from the bottom of the thin-layer reservoir to the interface between the thief layer and the non-thief layer, and h represents the initial formation thickness of the thin-layer reservoir.

7. The method according to claim 1, characterized in that, The first simplified seepage model is: The second simplified seepage model is: in, This represents the reservoir pressure within the non-criminal layer after the transformation; represents the transformed reservoir pressure within the stratum, and s represents the Laplace variable.

8. The method according to claim 1, characterized in that, The determination of the initial conditions for the first and second seepage models, the first boundary conditions for the top and bottom of the thin-layer reservoir, and the second boundary conditions for the interface between the thief layer and the non-thief layer includes: The initial conditions for the first seepage model and the second seepage model are as follows: p1(x,y,z,t=0)=p2(x,y,z,t=0)=p0 p1(x→∞,y→∞,z,t)=p2(x→∞,y→∞,z,t)=p0 The first boundary conditions for the top and bottom of the thin-layer reservoir are: (z=0∪z=h) The second boundary condition of the interface between the thief layer and the non-thief layer is: p1(x,t,z=z0,t)=p2(x,y,z=z0,t) Where p1 represents the formation pressure within the non-thief layer, p2 represents the formation pressure within the thief layer, p0 represents the initial pressure of the thin-layer reservoir, and k v1 k represents the vertical permeability of the non-thief layer. v2 z0 represents the vertical permeability of the burrowing layer, z0 represents the thickness from the bottom of the thin reservoir to the interface between the burrowing layer and the non-burrowing layer, h represents the initial formation thickness of the thin reservoir, t represents time, μ1 represents the fluid viscosity of the non-burrowing layer, and μ2 represents the fluid viscosity of the burrowing layer.

9. The method according to claim 1, characterized in that, The equivalent model of the thin-layer reservoir is: Where p represents the formation pressure at any point in the thin-layer reservoir, p0 represents the initial pressure of the thin-layer reservoir, and L represents the length of the horizontal well.

10. The method according to claim 1, characterized in that, The method further includes: Determine whether the well test data is reasonable. If the well test data is reasonable, then execute the steps of establishing the first seepage model of the non-thief layer and the second seepage model of the thief layer respectively.

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