Large frequency ratio substrate integrated waveguide filter cross-over and method

Abstract

The application belongs to the field of multi-band wireless communication systems, and discloses a large-frequency-ratio substrate integrated waveguide filter cross-connector and method, which comprises layered metal layers and dielectric substrates, forms a substrate integrated waveguide through metallized via holes, converts a microstrip line as an input port and a waveguide, and is composed of multiple resonant cavities, wherein a common cavity and other resonant cavities adopt a non-adjacent resonant mode instead of a traditional adjacent mode combination. The cross-connector effectively breaks through the narrow limitation of the frequency ratio of the traditional dual-mode resonant cavity scheme, realizes a wide-range adjustable large-frequency-ratio filter cross-connection function, can meet the urgent needs of the next generation of wireless communication systems for large frequency difference and wide frequency band coverage, and meanwhile maintains high isolation and low stray response between channels.

Description

Technical Field

[0001] This invention belongs to the technical field of multi-band wireless communication systems, and particularly relates to a high frequency ratio substrate integrated waveguide filter jumper and method. Background Technology

[0002] With the rapid iteration and integration of multi-band wireless communication systems such as satellite communication and radar detection, radio frequency (RF) front-end systems are accelerating their evolution towards multi-frequency, integrated, and miniaturized designs. Dual-channel dual-band filter jumpers, as core RF components enabling parallel transmission and path isolation of signals across different frequency bands, directly determine the communication quality, spectral efficiency, and integration density of multi-band systems. Substrate-integrated waveguide structures combine the advantages of traditional metal waveguides (high quality factor, low insertion loss, high power capacity) with the ease of integration, low cost, and fabrication of planar circuits, making them the mainstream topology for current filter jumper designs. Substrate-integrated waveguide filter jumpers with flexible dual-channel frequency ratio configuration capabilities are particularly crucial components for achieving high-performance, compact, and highly integrated multi-band RF front-end systems.

[0003] Currently, publicly reported designs for substrate-integrated waveguide filter jumpers are mainly based on dual-mode resonant cavity structures. These structures use adjacent orthogonal resonant modes, such as TE102 / TE201, to excite two working channels, leveraging the inherent orthogonality between modes to ensure high isolation between channels. This approach is simple to design, offers excellent mode orthogonality, and provides good fabrication consistency, making it the mainstream technology in the current field of substrate-integrated waveguide filter jumpers. However, all of these existing technologies strictly rely on the combination of adjacent resonant modes, meaning there is no harmonic relationship between the two working modes. This inherent characteristic fundamentally limits the frequency spacing range of the dual channels, resulting in a very limited improvement in the dual-channel frequency ratio. The mode frequency ratio is confined to a narrow theoretical range, failing to meet the urgent needs of next-generation multi-band wireless communication systems for large frequency difference and wide-band coverage filtering jumper functions.

[0004] Therefore, it is evident that overcoming the fundamental limitation imposed by adjacent resonant modes on the dual-channel frequency ratio of substrate integrated waveguide filter jumpers, and achieving a wide-range adjustable, spurious-response-free high-frequency ratio substrate integrated waveguide filter jumper, is a core technical problem that urgently needs to be solved. Summary of the Invention

[0005] This invention provides a high-ratio substrate integrated waveguide filter jumper and method. Using this filter jumper can overcome the fundamental limitation of adjacent resonant modes on the dual-channel frequency ratio of the substrate integrated waveguide filter jumper, and can realize a wide-range adjustable, spurious-response-free high-ratio substrate integrated waveguide filter jumper.

[0006] To achieve the above objectives, the present invention employs the following technical content: A high frequency ratio substrate integrated waveguide filter jumper includes a second metal layer, a first dielectric substrate, and a first metal layer arranged in layers from bottom to top; The first metal layer, the first dielectric substrate, and the second metal layer are all formed with multiple rows of metallized vias; every two rows of metallized vias form a substrate integrated waveguide structure; Multiple microstrip lines serving as input ports for filter jumpers and a dual-channel filter jumper are formed on the first metal layer. The microstrip line and the substrate integrated waveguide structure on the first metal layer constitute a microstrip line to substrate integrated waveguide structure. The microstrip line to substrate integrated waveguide structure is connected to the dual-channel filter jumper. The dual-channel filter jumper is based on multiple resonant cavities; one of the resonant cavities serves as the common cavity of the dual-channel filter jumper, and the other resonant cavities are connected to the common cavity to form two filter paths; All other resonant cavities use the same resonant mode; the resonant cavity that serves as a common cavity uses a non-adjacent resonant mode with other resonant cavities.

[0007] Furthermore, the common cavity operates in dual-mode, while all other resonant cavities operate in fundamental mode.

[0008] Furthermore, the resonant cavity, serving as a common cavity, operates in TE101 / TE401, TE101 / TE201, TE102 / TE201, or TE101 / TE701.

[0009] Furthermore, the number of other resonant cavities in the two filtering paths is the same, which together with the resonant cavity serving as a common cavity form a dual-channel filter jumper with a higher-order filtering response.

[0010] Furthermore, the dual-channel filter bridge includes a first square resonant cavity, a second square resonant cavity, a rectangular resonant cavity, a third square resonant cavity, a fourth square resonant cavity, a fifth square resonant cavity, a sixth square resonant cavity, a seventh square resonant cavity, and an eighth square resonant cavity; The first square resonant cavity, the second square resonant cavity, the rectangular resonant cavity, the third square resonant cavity, and the fourth square resonant cavity are connected in sequence to form the first filtering path; The fifth square resonant cavity, the sixth square resonant cavity, the rectangular resonant cavity, the seventh square resonant cavity, and the eighth square resonant cavity are connected in sequence to form the second filtering path.

[0011] Furthermore, a first microstrip line, a second microstrip line, a third microstrip line, and a fourth microstrip line are integrated on the first metal layer; The first microstrip line is connected to the first square resonant cavity; the second microstrip line is connected to the fifth square resonant cavity; the third microstrip line is connected to the fourth square resonant cavity; and the fourth microstrip line is connected to the seventh square resonant cavity.

[0012] Furthermore, the first dielectric substrate is made of Rogers 5880 substrate; the first metal layer and the second metal layer are made of copper.

[0013] A method for manufacturing a high frequency ratio substrate integrated waveguide filter jumper includes: Provide a first dielectric substrate; A second metal layer is formed on the lower surface of the first dielectric substrate, and a first metal layer is formed on the upper surface; Multiple rows of metallized vias are fabricated on the first metal layer, the first dielectric substrate, and the second metal layer, respectively; every two rows of metallized vias form a substrate integrated waveguide structure; Multiple microstrip lines serving as input ports for filter jumpers and dual-channel filter jumpers are formed on the first metal layer; The microstrip line is connected to the substrate integrated waveguide structure on the first metal layer to form a microstrip line to substrate integrated waveguide structure. By connecting a microstrip line to a substrate integrated waveguide structure with a dual-channel filter jumper, a high-ratio substrate integrated waveguide filter jumper is obtained. The dual-channel filter jumper is based on multiple resonant cavities; one resonant cavity serves as the common cavity of the dual-channel filter jumper, and the other resonant cavities are connected to the common cavity to form two filter paths; all other resonant cavities adopt the same resonant mode; the resonant cavity serving as the common cavity adopts a non-adjacent resonant mode with other resonant cavities.

[0014] Furthermore, the common cavity operates in dual-mode, while all other resonant cavities operate in fundamental mode.

[0015] Furthermore, the dual-channel filter bridge includes a first square resonant cavity, a second square resonant cavity, a rectangular resonant cavity, a third square resonant cavity, a fourth square resonant cavity, a fifth square resonant cavity, a sixth square resonant cavity, a seventh square resonant cavity, and an eighth square resonant cavity; The first square resonant cavity, the second square resonant cavity, the rectangular resonant cavity, the third square resonant cavity, and the fourth square resonant cavity are connected in sequence to form the first filtering path; The fifth square resonant cavity, the sixth square resonant cavity, the rectangular resonant cavity, the seventh square resonant cavity, and the eighth square resonant cavity are connected in sequence to form the second filtering path.

[0016] Compared with the prior art, the present invention has the following beneficial effects: This invention provides a high-ratio substrate integrated waveguide filter bridge, comprising layered metal layers and a dielectric substrate. A substrate integrated waveguide is formed through metallized vias. A microstrip line serves as the input port and waveguide conversion. The dual-channel filter bridge consists of multiple resonant cavities, where the common cavity and other resonant cavities employ non-adjacent resonant modes, rather than a traditional combination of adjacent modes. This structure breaks the inherent constraint of relying on adjacent resonant modes by utilizing the adjustable frequency spacing between non-adjacent modes, significantly expanding the frequency ratio between the common cavity and the path resonant cavity, thus allowing for free adjustment of the dual-channel frequency difference in the design. This bridge effectively overcomes the narrow frequency ratio limitation of traditional dual-mode resonant cavity schemes, achieving a wide-range adjustable high-ratio filter bridge function. It can meet the urgent needs of next-generation wireless communication systems for large frequency differences and wide-band coverage, while maintaining high isolation and low spurious response between channels.

[0017] This invention also provides a method for manufacturing a high-ratio substrate integrated waveguide filter bridge. This method forms a substrate integrated waveguide structure by stacking dielectric substrates and metal layers and processing metallized vias. A microstrip line and a dual-channel filter bridge composed of multiple resonant cavities are integrated on the surface. All path resonant cavities use the same resonant mode, while the common cavity uses a non-adjacent resonant mode. This method breaks the constraint of traditional designs that rely on adjacent resonant modes. By selecting non-adjacent mode combinations, the frequency ratio between the common cavity and the path resonant cavities is no longer limited by the narrow interval between adjacent modes, thus theoretically achieving a wide range of free adjustment of the dual-channel frequency ratio. This method overcomes the bottleneck of limited dual-channel frequency ratio improvement in existing technologies, enabling the manufacture of filter bridges suitable for scenarios with large frequency differences and wide frequency band coverage, while maintaining high isolation characteristics and good filtering performance between channels. This meets the urgent needs of next-generation wireless communication systems for high performance and flexible filter bridge design. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of a high frequency ratio substrate integrated waveguide filter jumper provided in an embodiment of the present invention; Figure 2 The reflection coefficient and isolation diagrams of the first and second ports of the high frequency ratio substrate integrated waveguide filter jumper provided for the embodiment of the present invention; Figure 3 The reflection coefficient and isolation diagram of the high frequency ratio substrate integrated waveguide filter jumper provided in the embodiment of the present invention in TE102 / TE201 mode; Figure 4 The reflection coefficient and isolation diagram of the high frequency ratio substrate integrated waveguide filter jumper provided in the embodiment of the present invention in the TE101 / TE201 mode simulation.

[0019] Figure label: 1. First metal layer; 2. First dielectric substrate; 3. Second metal layer; 4. First microstrip line; 5. Second microstrip line; 6. Third microstrip line; 7. Fourth microstrip line; 8. First square resonant cavity; 9. Second square resonant cavity; 10. Rectangular resonant cavity; 11. Third square resonant cavity; 12. Fourth square resonant cavity; 13. Fifth square resonant cavity; 14. Sixth square resonant cavity; 15. Seventh square resonant cavity; 16. Eighth square resonant cavity. Detailed Implementation

[0020] To make the technical problems solved by the present invention, the technical solutions, and the beneficial effects clearer, the following specific embodiments provide a further detailed description of the present invention. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of the invention.

[0021] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0022] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0023] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0024] As mentioned in the background technology, existing solutions for dual-channel dual-frequency filter jumpers all rely on the combination of adjacent modes, that is, there are no harmonics between the two operating modes, which cannot break through the frequency interval bottleneck, and the improvement of the dual-channel frequency ratio is limited, and the mode frequency ratio is limited to a narrow theoretical range.

[0025] The technical terms involved in this invention are explained below: The TE101 mode is the fundamental transverse electric mode in a rectangular resonant cavity. Its electromagnetic field exhibits a half-wave standing wave distribution along the length of the cavity, and it has the lowest resonant frequency and the simplest field distribution.

[0026] The TE401 mode is a higher-order transverse electric mode in a rectangular resonant cavity. Its electromagnetic field is distributed in four half-wave standing waves along the length of the cavity, and it has a higher resonant frequency than the TE101 mode.

[0027] Both TE201 and TE102 are high-order transverse electric modes in a rectangular resonant cavity. The TE201 mode forms two half-wave field distributions along the length of the cavity, while the TE102 mode forms two half-wave field distributions along the width of the cavity.

[0028] The TE701 mode is a high-order transverse electric mode in a rectangular resonant cavity. Its electromagnetic field has seven half-wave standing wave distributions along the length of the cavity and maintains the fundamental mode distribution along the width.

[0029] To address the aforementioned issues, this embodiment provides a high frequency ratio substrate integrated waveguide filter jumper. This filter jumper can significantly expand the achievable dual-channel frequency ratio range while maintaining good isolation between the two channels, thereby meeting the requirements of high frequency ratio dual-band wireless communication systems.

[0030] For example, this embodiment provides a high frequency ratio substrate integrated waveguide filter jumper. The core idea of ​​this filter jumper is: firstly, select two non-adjacent resonant modes as the working modes, that is, there are one or more intermediate spurious modes between the two working modes, and use the inherent large frequency ratio between the non-adjacent modes to obtain a frequency ratio that far exceeds the current theoretical upper limit of dual-channel frequency ratio.

[0031] The high frequency ratio substrate integrated waveguide filter jumper provided in this embodiment will be further described below with reference to the accompanying drawings: like Figure 1 As shown, this embodiment provides a high-ratio substrate-integrated waveguide filter jumper, including a second metal layer 3, a first dielectric substrate 2, and a first metal layer 1 arranged in layers from bottom to top. Multiple rows of metallized vias are formed in each of the first metal layer 1, the first dielectric substrate 2, and the second metal layer 3, with each pair of rows of metallized vias forming a substrate-integrated waveguide structure. Compared to multilayer substrate solutions, this layered stacked single-layer dielectric substrate structure eliminates the need for complex interlayer alignment and bonding processes, significantly reducing processing difficulty and production costs. Furthermore, the substrate-integrated waveguide structure combines the advantages of low waveguide transmission loss and excellent shielding performance with the small size and easy integration of microstrip circuits, making it suitable for the integrated design of high-frequency microwave communication systems.

[0032] Specifically, multiple microstrip lines serving as input ports for filter jumpers and a dual-channel filter jumper are formed on the first metal layer 1. The microstrip lines and the substrate integrated waveguide structure on the first metal layer 1 constitute a microstrip line-to-substrate integrated waveguide structure, which is connected to the dual-channel filter jumper. This microstrip line-to-substrate integrated waveguide structure achieves efficient impedance matching between the planar microstrip circuit and the substrate integrated waveguide resonant cavity, reduces port reflection loss, ensures stable signal transmission, and facilitates the cascading integration of the filter jumper with other planar microwave circuits.

[0033] In this embodiment, the dual-channel filter jumper is based on multiple resonant cavities. One resonant cavity serves as the common cavity of the dual-channel filter jumper. The other resonant cavities are connected to the common cavity to form two filter paths. All other resonant cavities adopt the same resonant mode, while the resonant cavity serving as the common cavity adopts a non-adjacent resonant mode with other resonant cavities. By sharing a common resonant cavity to achieve dual-channel filtering, the number of resonant cavities in the overall circuit is effectively reduced, and the physical size of the device is minimized. At the same time, the non-adjacent resonant mode of the common cavity with other resonant cavities can significantly increase the operating frequency interval of the two filter paths, achieving a high frequency ratio dual-channel filtering characteristic and meeting the requirements for simultaneous transmission and filtering of signals in different frequency bands.

[0034] In another preferred embodiment, the common cavity operates in dual-mode, while all other resonant cavities operate in fundamental mode. By using the two different resonant modes of the common cavity to couple the two filter paths respectively, frequency separation of the two channels can be achieved without adding additional resonant cavities, further improving the integration of the device. At the same time, the dual-mode operation mode allows for flexible adjustment of the center frequencies of the two paths, facilitating the achievement of different frequency ratio requirements.

[0035] Explained, the resonant cavity, serving as a common cavity, can operate in combinations of TE101 / TE401, TE101 / TE201, TE102 / TE201, or TE101 / TE701 modes. By selecting different dual-mode combinations, a wide range of frequency ratio requirements, from 1.5 times to over 7 times, can be covered, adapting to the differentiated requirements of various communication systems for multi-band operation, thus improving the versatility and applicability of the device. It should be noted that TE101 / TE401 refers to TE101 mode and TE401 mode, and other combination modes are explained in the same way as TE101 / TE401, and will not be elaborated further here.

[0036] In this embodiment, the number of other resonant cavities in the two filtering paths is the same, forming a dual-channel filter jumper with a higher-order filtering response together with the resonant cavity serving as a common cavity. Using the same number of resonant cavities in both paths ensures that the two filtering paths have symmetrical amplitude-frequency response characteristics and similar insertion losses. Simultaneously, the higher-order filtering response effectively improves out-of-band rejection capability, suppresses unwanted harmonics and spurious signals, and enhances filtering performance.

[0037] Specifically, the dual-channel filter bridge includes a first square resonant cavity 8, a second square resonant cavity 9, a rectangular resonant cavity 10, a third square resonant cavity 11, a fourth square resonant cavity 12, a fifth square resonant cavity 13, a sixth square resonant cavity 14, a seventh square resonant cavity 15, and an eighth square resonant cavity 16. The first square resonant cavity 8, the second square resonant cavity 9, the rectangular resonant cavity 10, the third square resonant cavity 11, and the fourth square resonant cavity 12 are sequentially connected to form the first filter path, and the fifth square resonant cavity 13, the sixth square resonant cavity 14, the rectangular resonant cavity 10, the seventh square resonant cavity 15, and the eighth square resonant cavity 16 are sequentially connected to form the second filter path. This embodiment employs a structure of eight square resonant cavities and one rectangular common cavity. Each filter path contains five resonant cavities, enabling a fifth-order Chebyshev filter response. While ensuring flatness within the passband, it achieves out-of-band rejection exceeding 40dB, effectively isolating signals from different frequency bands and avoiding mutual interference between signals.

[0038] Specifically, a first microstrip line 4, a second microstrip line 5, a third microstrip line 6, and a fourth microstrip line 7 are integrated on the first metal layer 1. The first microstrip line 4 is connected to the first square resonant cavity 8, the second microstrip line 5 is connected to the fifth square resonant cavity 13, the third microstrip line 6 is connected to the fourth square resonant cavity 12, and the fourth microstrip line 7 is connected to the seventh square resonant cavity 15. By using four microstrip line ports as the input and output ports of the two filtering paths respectively, independent input and output of the dual-channel signals are achieved. The high isolation between the ports ensures the independence of the two paths. Simultaneously, the microstrip line ports facilitate soldering connections to external circuits, improving the engineering practicality of the device.

[0039] In another preferred embodiment, the first dielectric substrate 2 is made of Rogers 5880 substrate with a dielectric constant of 2.2 and a thickness of 0.508 mm. The first metal layer 1 and the second metal layer 3 are made of copper with a thickness of 0.018 mm. All metallized vias have a diameter of 0.6 mm, and the spacing between adjacent metallized vias is 1 mm. The Rogers 5880 substrate has the characteristics of low dielectric constant and low loss tangent, exhibiting excellent transmission performance in the high-frequency band and effectively reducing device insertion loss. The copper metal layers have good conductivity, further reducing conductor loss. Simultaneously, the precise metallized via dimensions and spacing parameters ensure stable transmission characteristics of the substrate-integrated waveguide structure, improving device consistency and reliability.

[0040] Therefore, this embodiment provides a high-ratio substrate integrated waveguide filter jumper. By changing the operating mode sequence of the common cavity, i.e., by adjusting the cavity aspect ratio, the originally adjacent operating mode combination is transformed into a non-adjacent mode combination, thus overcoming the theoretical limitation of traditional adjacent mode schemes that the dual-channel frequency ratio is less than 1.32. This filter jumper can achieve flexible and wide-range high-ratio characteristics while maintaining good isolation between the two channels. Furthermore, this embodiment is based on a single-layer substrate integrated waveguide structure, eliminating the need for multi-layer dielectric substrates or three-dimensional structures required by traditional methods, resulting in significant low-cost advantages and low-loss characteristics.

[0041] This embodiment also provides a method for manufacturing a high frequency ratio substrate integrated waveguide filter jumper, including the following steps: First, a second metal layer 3 is formed on the lower surface of the first dielectric substrate 2, and a first metal layer 1 is formed on the upper surface. Then, multiple rows of metallized vias are processed on the first metal layer 1, the first dielectric substrate 2, and the second metal layer 3, respectively. Every two rows of metallized vias form a substrate integrated waveguide structure. Then, multiple microstrip lines as input ports of the filter jumper and a dual-channel filter jumper are formed on the first metal layer 1. The microstrip lines are then connected to the substrate integrated waveguide structure on the first metal layer 1 to form a microstrip line to substrate integrated waveguide structure. Finally, the microstrip line to substrate integrated waveguide structure is connected to the dual-channel filter jumper to obtain a high frequency ratio substrate integrated waveguide filter jumper.

[0042] Explained, in the above manufacturing method, the dual-channel filter jumper is based on multiple resonant cavities. One resonant cavity serves as the common cavity of the dual-channel filter jumper. The other resonant cavities are connected to the common cavity to form two filter paths. All other resonant cavities adopt the same resonant mode, while the resonant cavity serving as the common cavity adopts a non-adjacent resonant mode with the other resonant cavities. By pre-designing the size and coupling structure of the resonant cavities during the manufacturing process, the resonant modes and coupling strength of the common cavity and other resonant cavities can be precisely controlled, thereby accurately realizing the center frequency, bandwidth, and filtering characteristics of the two filter paths and ensuring the repeatability of device performance.

[0043] As another preferred embodiment, in the above manufacturing method, the resonant cavity serving as the common cavity operates in a dual-mode state, while all other resonant cavities operate in a fundamental mode state. By adjusting the geometric dimensions of the common cavity, the frequencies of its two resonant modes can be precisely controlled, thereby flexibly adjusting the frequency ratio of the two filtering paths to meet the needs of different systems. At the same time, the square resonant cavity operating in fundamental mode is simple to manufacture, has stable performance, and is easy to mass-produce.

[0044] Specifically, in the above manufacturing method, the dual-channel filter bridge includes a first square resonant cavity 8, a second square resonant cavity 9, a rectangular resonant cavity 10, a third square resonant cavity 11, a fourth square resonant cavity 12, a fifth square resonant cavity 13, a sixth square resonant cavity 14, a seventh square resonant cavity 15, and an eighth square resonant cavity 16. The first square resonant cavity 8, the second square resonant cavity 9, the rectangular resonant cavity 10, the third square resonant cavity 11, and the fourth square resonant cavity 12 are sequentially connected to form a first filter path, and the fifth square resonant cavity 13, the sixth square resonant cavity 14, the rectangular resonant cavity 10, the seventh square resonant cavity 15, and the eighth square resonant cavity 16 are sequentially connected to form a second filter path. The standardized square and rectangular resonant cavity structures facilitate precise processing through photolithography and etching processes. Simultaneously, the symmetrical path structure ensures the performance consistency of the two filter paths, reducing the workload of later debugging and improving production efficiency. Furthermore, by changing the size of the rectangular resonant cavity 10, different frequency ratio ranges can be achieved.

[0045] As can be seen, this manufacturing method effectively integrates filtering capabilities while also achieving an adjustable frequency ratio. The filter jumper manufactured using this method requires only a single-layer dielectric substrate and is easily integrated with other passive circuits.

[0046] A specific simulation experiment was also conducted on the high frequency ratio substrate integrated waveguide filter jumper provided in this embodiment, and the results are as follows: like Figure 2As shown, the effect simulation of the high frequency ratio substrate integrated waveguide filter jumper was carried out. In the experiment, the rectangular resonant cavity 10 operated in the TE101 / TE401 mode; the frequency ratio reached 2.35, and the harmonics between the two passbands were suppressed to below 20dB, and the in-band isolation reached 27dB.

[0047] like Figure 3 As shown, the frequency ratio range achievable by using the TE102 / TE201 mode combination is smaller than that of the TE101 / TE401 mode combination. The rectangular resonator 10 operates in the TE102 / TE201 mode, with a frequency ratio of 1.45, which breaks through the theoretical frequency ratio of 1.32 in the current analysis of the TE102 and TE201 modes. Furthermore, the harmonics between the two passbands are suppressed to below 30dB, and the in-band isolation reaches 50dB.

[0048] like Figure 4 As shown, using the mode combination TE101 / TE201, the frequency ratio range that can be achieved is between the range achieved by the TE101 / TE401 mode and the range of TE102 / TE201. The operating mode of the rectangular resonant cavity 10 is TE101 / TE201, the frequency ratio reaches 1.85, and the harmonics between the two passbands are suppressed to below 35dB, and the in-band isolation reaches 50dB.

[0049] It should be noted that, Figures 2-4 In the diagram, dashed lines represent simulations, solid lines represent measurements, and the vertical axis S-parameters represent scattering parameters; S ij This represents the ratio of the emitted wave (output signal) at port i to the incident wave (input signal) at port j when all ports except port j are connected to matched loads, where i and j are both positive integers, and in this embodiment, the values ​​of i and j are both positive integers from 1 to 4; for example: S 11 This represents the self-reflection coefficient of port 1.

[0050] In summary, this invention provides a high frequency ratio substrate integrated waveguide filter jumper and method, which has the following advantages compared with existing filter jumpers: First, this invention adopts a non-adjacent mode combination and combines it with harmonic suppression technology to break through the inherent bottleneck of dual-channel frequency ratio, and can achieve a wider range of dual-channel frequency ratios to meet the wide frequency spacing requirements of multi-band wireless communication systems. By using harmonic suppression technology, harmonics between the two passbands are suppressed, so there is no intermediate spurious mode interference, which improves the signal transmission quality.

[0051] Secondly, the design concept of this invention is simple, which avoids increasing the complexity of the design and the requirements of the manufacturing process, and fundamentally solves the core problem of the limited frequency ratio of dual channels. It takes into account the requirements of high integration, low loss and high frequency ratio, and is more practical.

[0052] The above embodiments are merely one of the implementation methods for achieving the technical solution of the present invention. The scope of protection claimed by the present invention is not limited to this embodiment, but also includes any variations, substitutions and other implementation methods that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention.

Claims

1. A high frequency ratio substrate integrated waveguide filter jumper, characterized in that, It includes a second metal layer (3), a first dielectric substrate (2), and a first metal layer (1) arranged in layers from bottom to top; The first metal layer (1), the first dielectric substrate (2), and the second metal layer (3) are all formed with multiple rows of metallized vias; every two rows of metallized vias form a substrate integrated waveguide structure; Multiple microstrip lines serving as input ports for filter jumpers and a dual-channel filter jumper are formed on the first metal layer (1); The microstrip line and the substrate integrated waveguide structure on the first metal layer (1) constitute a microstrip line to substrate integrated waveguide structure. The microstrip line to substrate integrated waveguide structure is connected to the dual-channel filter jumper. The dual-channel filter jumper is based on multiple resonant cavities; one of the resonant cavities serves as the common cavity of the dual-channel filter jumper, and the other resonant cavities are connected to the common cavity to form two filter paths; All other resonant cavities use the same resonant mode; the resonant cavity that serves as a common cavity uses a non-adjacent resonant mode with other resonant cavities.

2. The high frequency ratio substrate integrated waveguide filter jumper according to claim 1, characterized in that, The common cavity resonator operates in dual-mode, while all other resonators operate in fundamental mode.

3. The high frequency ratio substrate integrated waveguide filter jumper according to claim 2, characterized in that, The resonant cavity, serving as a common cavity, operates in TE101 / TE401, TE101 / TE201, TE102 / TE201, or TE101 / TE701.

4. The high frequency ratio substrate integrated waveguide filter jumper according to claim 1, characterized in that, The two filter paths have the same number of other resonant cavities, which together with the resonant cavity that serves as a common cavity form a dual-channel filter jumper with a higher-order filter response.

5. A high frequency ratio substrate integrated waveguide filter jumper according to claim 1, characterized in that, The dual-channel filter bridge includes a first square resonant cavity (8), a second square resonant cavity (9), a rectangular resonant cavity (10), a third square resonant cavity (11), a fourth square resonant cavity (12), a fifth square resonant cavity (13), a sixth square resonant cavity (14), a seventh square resonant cavity (15), and an eighth square resonant cavity (16). The first square resonant cavity (8), the second square resonant cavity (9), the rectangular resonant cavity (10), the third square resonant cavity (11), and the fourth square resonant cavity (12) are connected in sequence to form the first filtering path; The fifth square resonant cavity (13), the sixth square resonant cavity (14), the rectangular resonant cavity (10), the seventh square resonant cavity (15), and the eighth square resonant cavity (16) are connected in sequence to form the second filtering path.

6. A high frequency ratio substrate integrated waveguide filter jumper according to claim 5, characterized in that, The first metal layer (1) is integrated with a first microstrip line (4), a second microstrip line (5), a third microstrip line (6) and a fourth microstrip line (7). The first microstrip line (4) is connected to the first square resonant cavity (8); the second microstrip line (5) is connected to the fifth square resonant cavity (13); the third microstrip line (6) is connected to the fourth square resonant cavity (12); and the fourth microstrip line (7) is connected to the seventh square resonant cavity (15).

7. A high frequency ratio substrate integrated waveguide filter jumper according to claim 1, characterized in that, The first dielectric substrate (2) is made of Rogers 5880 material; the first metal layer (1) and the second metal layer (3) are made of copper.

8. A method for manufacturing a high frequency ratio substrate integrated waveguide filter jumper, characterized in that, include: A first dielectric substrate (2) is provided; A second metal layer (3) is formed on the lower surface of the first dielectric substrate (2), and a first metal layer (1) is formed on the upper surface. Multiple rows of metallized vias are fabricated on the first metal layer (1), the first dielectric substrate (2), and the second metal layer (3); each pair of metallized vias forms a substrate integrated waveguide structure. Multiple microstrip lines and a dual-channel filter jumper are formed on the first metal layer (1) as input ports of the filter jumper; Connect the microstrip line to the substrate integrated waveguide structure on the first metal layer (1) to form a microstrip line to substrate integrated waveguide structure; By connecting a microstrip line to a substrate integrated waveguide structure with a dual-channel filter jumper, a high-ratio substrate integrated waveguide filter jumper is obtained. The dual-channel filter jumper is based on multiple resonant cavities; one resonant cavity serves as the common cavity of the dual-channel filter jumper, and the other resonant cavities are connected to the common cavity to form two filter paths; all other resonant cavities adopt the same resonant mode; the resonant cavity serving as the common cavity adopts a non-adjacent resonant mode with other resonant cavities.

9. A method for manufacturing a high frequency ratio substrate integrated waveguide filter jumper according to claim 8, characterized in that, The common cavity resonator operates in dual-mode, while all other resonators operate in fundamental mode.

10. A method for manufacturing a high frequency ratio substrate integrated waveguide filter jumper according to claim 8, characterized in that, The dual-channel filter bridge includes a first square resonant cavity (8), a second square resonant cavity (9), a rectangular resonant cavity (10), a third square resonant cavity (11), a fourth square resonant cavity (12), a fifth square resonant cavity (13), a sixth square resonant cavity (14), a seventh square resonant cavity (15), and an eighth square resonant cavity (16). The first square resonant cavity (8), the second square resonant cavity (9), the rectangular resonant cavity (10), the third square resonant cavity (11), and the fourth square resonant cavity (12) are connected in sequence to form the first filtering path; The fifth square resonant cavity (13), the sixth square resonant cavity (14), the rectangular resonant cavity (10), the seventh square resonant cavity (15), and the eighth square resonant cavity (16) are connected in sequence to form the second filtering path.

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