Coupler and method of manufacturing the same, transceiver module and communication device

Abstract

The application provides a coupler and a preparation method thereof, a transceiver module and a communication device. It relates to the technical field of radio frequency devices. The coupler comprises a first insulating layer, a glass layer and a second insulating layer which are arranged in layers; the coupler further comprises a first transmission line and a second transmission line, the first transmission line is arranged in the first insulating layer, and the second transmission line is arranged in the second insulating layer; a projection of the first transmission line on the glass layer at least partially overlaps a projection of the second transmission line on the glass layer; or the coupler comprises a glass layer, a first transmission line and a second transmission line, the first transmission line and the second transmission line are both arranged on the same surface of the glass layer, and the first transmission line and the second transmission line are arranged in a spaced manner. The coupler provided by the application can improve the coupling performance and reduce the coupling signal loss.

Description

Technical Field

[0001] This application relates to the field of radio frequency device technology, and in particular to a coupler and its fabrication method, a transceiver module and a communication device. Background Technology

[0002] With the rapid development of communication technology, wireless communication, data transmission, satellite communication and other fields have placed increasingly higher demands on the quality and efficiency of signal transmission. Among them, couplers, as key electronic devices in various communication fields, are widely used in signal distribution, synthesis, isolation and power monitoring. They can realize the effective transmission and conversion of signals between different transmission lines and are an indispensable part of ensuring the stable operation and efficient transmission of communication systems.

[0003] In communication systems, the performance of couplers directly affects signal transmission quality and overall system efficiency. Therefore, achieving low coupling signal loss is crucial for couplers. Low loss means the signal retains higher energy during coupling, ensuring signal integrity and accuracy during transmission. This is significant for improving communication system coverage, enhancing signal stability, and reducing system energy consumption. However, most existing couplers suffer from significant signal loss between coupling lines. Summary of the Invention

[0004] This application provides a coupler, its fabrication method, a transceiver module, and a communication device. The aim is to improve coupling performance and reduce coupling signal loss.

[0005] To achieve the above objectives, the embodiments of this application adopt the following technical solutions:

[0006] On one hand, this application provides a coupler comprising a first insulating layer, a glass layer, and a second insulating layer stacked together; the coupler also includes a first transmission line and a second transmission line, the first transmission line being disposed within the first insulating layer and the second transmission line being disposed within the second insulating layer; the projection of the first transmission line onto the glass layer at least partially overlaps with the projection of the second transmission line onto the glass layer. Alternatively, the coupler comprises a glass layer, a first transmission line, and a second transmission line, both the first and second transmission lines being disposed on the same surface of the glass layer, and the first and second transmission lines being spaced apart.

[0007] This application provides two types of couplers. In one coupler, a first transmission line is disposed within a first insulating layer, and a second transmission line is disposed within a second insulating layer, with the first insulating layer, glass layer, and second insulating layer stacked. This arrangement, placing the first and second transmission lines in different layers, enables wide-side coupling between them, thereby increasing the coupling area, improving coupling strength, and expanding the coupler's operating bandwidth. Furthermore, the layer between the first and second transmission lines is a glass layer. Glass has high resistivity, reducing current leakage; moreover, as a low-loss material, glass has a low loss tangent, meaning that it absorbs and scatters electromagnetic waves less during propagation. Therefore, signal transmission within the glass layer reduces signal loss, improves coupling performance, and lowers insertion loss.

[0008] In another type of coupler, by placing both the first and second transmission lines on the same surface of the glass layer, narrow-edge coupling of the first and second transmission lines can be achieved. Because narrow-edge coupling has a compact structure, is relatively simple to design, and has low manufacturing costs, this coupler is suitable for applications with simple network structures and small data transmission volumes, meeting basic transmission requirements at a low cost. Furthermore, in this coupler, since both the first and second transmission lines are placed on the same surface of the glass layer, the high resistivity of glass reduces current leakage, and glass is a low-loss material with a low loss tangent. Therefore, this coupler can also reduce the loss of the coupled signal, improve coupling performance, and reduce insertion loss.

[0009] In one possible implementation, the surface of the first transmission line near the glass layer is bonded to the glass layer, and the surface of the first transmission line near the glass layer is flush with the surface of the first insulating layer near the glass layer; the surface of the second transmission line near the glass layer is bonded to the glass layer, and the surface of the second transmission line near the glass layer is flush with the surface of the second insulating layer near the glass layer.

[0010] This application reduces the distance between the first and second transmission lines by having the surfaces of the first and second transmission lines near the glass layer respectively adhere to opposite sides of the glass layer, thereby improving their coupling performance. Furthermore, this application aligns the surfaces of the first and second transmission lines near the glass layer with the surfaces of the first and second insulating layers near the glass layer, effectively embedding the first and second transmission lines within the first and second insulating layers. This reduces the height difference between the surfaces of the first and second transmission lines near the glass layer and the first and second insulating layers, respectively. Consequently, during the fabrication of the glass layer between the first and second insulating layers, the flatness of the glass layer adheres to both layers is improved, reducing the risk of glass layer cracking.

[0011] In one feasible approach, both the materials of the first insulating layer and the second insulating layer comprise glass.

[0012] Because glass has high resistivity, it can reduce current leakage; and as a low-loss material, glass has a low loss tangent, thus its absorption and scattering of electromagnetic waves are minimal during propagation. Therefore, both the first and second insulating layers of this application are made of glass, which reduces signal loss when the signal is transmitted between the coupler and other devices or modules.

[0013] In one feasible approach, the thickness of both the first and second transmission lines is 4μm-20μm.

[0014] In this application, the thickness of both the first transmission line and the second transmission line is set to 4μm-20μm. When the first insulating layer and the second insulating layer include glass, the thickness of both the first transmission line and the second transmission line is less than or equal to 20μm, which facilitates etching of the first insulating layer and the second insulating layer to form grooves for embedding the corresponding transmission lines, thereby improving the machinability of the first insulating layer and the second insulating layer. The thickness of both the first transmission line and the second transmission line is greater than or equal to 4μm, which can reduce the material loss of the first transmission line and the second transmission line.

[0015] In one possible implementation, both the materials of the first insulating layer and the second insulating layer comprise silicon.

[0016] Due to its high chemical stability and resistance to reaction with most chemicals, silicon maintains stable performance even in harsh environments. Therefore, this application enables the coupler to achieve long-term stable operation by including silicon in both the first and second insulating layers. Furthermore, the abundant reserves of silicon provide a sufficient raw material guarantee for the large-scale mass production and application of the coupler, helping to ensure continuous production and supply.

[0017] In one possible implementation, the first insulating layer includes a first dielectric layer and a first adhesive layer stacked together, the first adhesive layer being located between the first dielectric layer and the glass layer, and the first transmission line being located within the first adhesive layer; the second insulating layer includes a second dielectric layer and a second adhesive layer stacked together, the second adhesive layer being located between the second dielectric layer and the glass layer, and the second transmission line being located within the second adhesive layer.

[0018] With the above-described configuration, during coupler fabrication, the corresponding transmission line can be fabricated on one side of the corresponding dielectric layer. Then, a corresponding adhesive layer is spin-coated onto the dielectric layer, surrounding the transmission line, such that the surface of the adhesive layer facing away from the dielectric layer is flush with the surface of the transmission line facing away from the dielectric layer. This adhesive layer effectively fills the gap between the dielectric layer and the glass layer, improving the flatness of the insulating layer and its corresponding transmission line, thereby reducing the risk of cracking during glass layer fabrication.

[0019] In one possible implementation, the materials of the first dielectric layer and the second dielectric layer comprise silicon; and / or, the materials of the first adhesive layer and the second adhesive layer both comprise semi-cured adhesive.

[0020] This application, by setting the materials of the first dielectric layer and the second dielectric layer to include silicon, enables the resulting coupler to maintain stable performance even in harsh environments, facilitating long-term stable operation. Furthermore, it provides a raw material guarantee for the large-scale mass production of the coupler, contributing to its continuous production and supply. This application also utilizes a semi-cured adhesive to fill the gap between the dielectric layer and the glass layer, effectively leveraging the fluidity and plasticity of the semi-cured adhesive before curing to achieve effective gap filling. After curing, the semi-cured adhesive forms a high-strength adhesive layer, further improving the structural stability and reliability of the coupler.

[0021] In one possible implementation, the coupler further includes a first matching stub and a second matching stub, the first matching stub being connected to one end of a first transmission line and the second matching stub being connected to one end of a second transmission line; one end of the first transmission line connected to the first matching stub and the other end of the second transmission line connected to the second matching stub serve as the signal input terminal of the coupler, and the other as the isolation terminal of the coupler. The first matching stub includes a first portion and a second portion, the first portion being connected between the second portion and the first transmission line; the dimension of the first portion along a first direction is smaller than the dimension of the second portion along the first direction. The second matching stub includes a third portion and a fourth portion, the third portion being connected between the fourth portion and the second transmission line; the dimension of the third portion along the first direction is smaller than the dimension of the fourth portion along the first direction. The arrangement directions of the first and second insulating layers, the arrangement directions of the first and second portions, and the first direction are arranged perpendicularly to each other.

[0022] This application sets matching stubs at the signal input and isolation ends of the coupler, and designs the matching stubs to be narrower and wider from the direction away from the corresponding transmission line. This allows the matching stubs to exhibit capacitive characteristics electrically, equivalent to a parallel capacitor. This helps to compensate for the inductive component in the coupler, achieve good matching over a wider frequency band, thereby improving the directivity of signal transmission and enhancing the isolation effect of the isolation end.

[0023] In one possible implementation, the first transmission line and the second transmission line are each a bent strip structure; the dimension of the first transmission line along the first direction is greater than the dimension of the first transmission line along the second direction, and the dimension of the second transmission line along the first direction is greater than the dimension of the second transmission line along the second direction; the arrangement directions of the first insulating layer and the second insulating layer, the first direction and the second direction are arranged perpendicularly to each other.

[0024] This application increases the coupling area of ​​the first transmission line along the first direction by making its dimension larger than its dimension along the second direction, and vice versa. Thus, the length directions of both the first and second transmission lines are the same. Furthermore, by configuring the first and second transmission lines as bent strip structures, the coupling area of ​​the first and second transmission lines can be increased, thereby improving the coupling efficiency between them.

[0025] In one possible implementation, the coupler further includes a third insulating layer disposed on the side of the glass layer near the first and second transmission lines, and the third insulating layer covers the first and second transmission lines.

[0026] The coupler of this application, through the above-described configuration, has corresponding layers on both sides of the first and second transmission lines (one side being a glass layer and the other side a third insulating layer). This results in a more symmetrical distribution of the electromagnetic field around the first and second transmission lines. This symmetry helps reduce electromagnetic wave radiation and leakage, improving the electromagnetic compatibility performance of the transmission lines. Furthermore, having corresponding layers on both sides of the first and second transmission lines facilitates integration and connection with other circuit components, simplifying manufacturing and processing, and reducing production costs and complexity.

[0027] On the other hand, this application provides a transceiver module, which includes a circuit board and a coupler in any of the above-described possible implementations, the coupler and the circuit board being electrically connected.

[0028] The transceiver module provided in this application uses a glass layer in its coupler. Since glass has a high resistivity, it can reduce current leakage. Moreover, as a low-loss material, glass has a low loss tangent. Therefore, when the signal of the transceiver module is transmitted in the glass layer of the coupler, the loss of the coupled signal can be reduced, the coupling performance can be improved, and the insertion loss can be reduced.

[0029] In another aspect, this application also provides a communication device, which includes a processor and the aforementioned transceiver module, wherein the transceiver module and the processor are electrically connected.

[0030] Since the communication device includes the aforementioned transceiver module, it has at least the same technical effect as the transceiver module, which can improve coupling performance and reduce coupling signal loss.

[0031] In another aspect, this application provides a method for fabricating a coupler, the method comprising: forming a first transmission line in a first insulating layer; bonding the first insulating layer and a glass layer; thinning the side of the glass layer away from the first insulating layer; forming a second transmission line in a second insulating layer; and bonding the second insulating layer and the glass layer such that the second insulating layer is located on the side of the glass layer away from the first insulating layer.

[0032] The coupler prepared by the above method has two advantages. First, the first transmission line and the second transmission line are located in different layers, which enables wide-side coupling of the first and second transmission lines. Compared with narrow-side coupling, this increases the coupling area, improves the coupling strength, and expands the working bandwidth of the coupler. Second, the layer between the first and second transmission lines is made of glass. Because glass has high resistivity, it can reduce current leakage. Moreover, glass has a low loss tangent, which reduces the absorption and scattering of electromagnetic waves during electromagnetic wave propagation. This reduces the loss of the coupled signal when the signal is transmitted within the glass layer, improves the coupling performance, and reduces insertion loss.

[0033] In one feasible manner, forming a first transmission line within a first insulating layer includes: forming a first groove on one side of the first insulating layer; depositing a metallic material on the side of the first insulating layer having the first groove; and removing the metallic material outside the first groove to obtain a first transmission line located within the first groove. Forming a second transmission line within a second insulating layer includes: forming a second groove on one side of the second insulating layer; depositing a metallic material on the side of the second insulating layer having the second groove; and removing the metallic material outside the second groove to obtain a second transmission line located within the second groove.

[0034] By forming a first transmission line in the first insulating layer and a second transmission line in the second insulating layer using the above-described preparation method, the surface flatness of the transmission line and the corresponding insulating layer can be improved. This facilitates the subsequent bonding of the first and second insulating layers to the opposite sides of the glass layer, reducing the risk of glass layer cracking and improving the yield of coupler fabrication.

[0035] In one feasible approach, both the first and second insulating layers are made of glass. Because glass has high resistivity, it reduces current leakage; and because glass has a low loss tangent, its absorption and scattering of electromagnetic waves are minimal during propagation. Therefore, using glass as the material for both the first and second insulating layers in the coupler reduces signal loss when transmitting signals between the coupler and other devices or modules.

[0036] In one feasible approach, both the first insulating layer and the second insulating layer are made of silicon. Silicon has high chemical stability and can maintain stable performance in harsh environments. Therefore, by including silicon in both the first and second insulating layers, this application enables the fabricated coupler to achieve long-term stable operation. Furthermore, the abundant reserves of silicon provide a sufficient raw material guarantee for the large-scale mass production of the coupler.

[0037] In one feasible manner, forming a first transmission line within a first insulating layer includes: forming the first transmission line on one side of a first dielectric layer; and spin-coating an adhesive material onto the side of the first dielectric layer having the first transmission line to form a first adhesive layer, wherein the first adhesive layer and the first dielectric layer form a first insulating layer. Forming a second transmission line within a second insulating layer includes: forming the second transmission line on one side of a second dielectric layer; and spin-coating an adhesive material onto the side of the second dielectric layer having the second transmission line to form a second adhesive layer, wherein the second adhesive layer and the second dielectric layer form a second insulating layer.

[0038] Through the above-described preparation process, this application can also achieve a flush surface between the adhesive layer and the corresponding dielectric layer, and between the transmission line and the corresponding dielectric layer. The formation of the adhesive layer effectively fills the gap between the corresponding dielectric layer and the glass layer, improving the flatness of the insulating layer and its corresponding transmission line, thereby reducing the risk of cracking during glass layer fabrication. Attached Figure Description

[0039] Figure 1 This is a schematic diagram of the structure of a communication device provided in an embodiment of this application;

[0040] Figure 2 This is a schematic diagram of the transceiver module provided in an embodiment of this application;

[0041] Figure 3 This is one of the schematic diagrams of a coupler applied to a reflective MEMS phase shifter according to an embodiment of this application;

[0042] Figure 4 A second schematic diagram illustrating the application of the coupler provided in this application to a reflective MEMS phase shifter;

[0043] Figure 5A This is one of the structural schematic diagrams of the coupler provided in the embodiments of this application;

[0044] Figure 5B This is a second schematic diagram of the coupler provided in the embodiments of this application;

[0045] Figure 6A This is the third schematic diagram of the coupler provided in the embodiments of this application;

[0046] Figure 6B Fourth schematic diagram of the coupler provided in the embodiments of this application;

[0047] Figure 7 A schematic diagram of the structure of the first transmission line and the first matching stub of the coupler provided in the embodiments of this application;

[0048] Figure 8 A schematic diagram of the structure of the second transmission line and the second matching stub of the coupler provided in the embodiments of this application;

[0049] Figure 9 One of the schematic flowcharts for the fabrication method of the coupler provided in the embodiments of this application;

[0050] Figures 10 to 18 One of the structural schematic diagrams obtained after completing the corresponding steps in fabricating the coupler provided in the embodiments of this application;

[0051] Figure 19 A second schematic flowchart illustrating the method for fabricating the coupler provided in this application embodiment;

[0052] Figure 20 The third schematic flowchart illustrates the method for fabricating the coupler provided in this application embodiment;

[0053] Figures 21 to 26 The second schematic diagram shows the structure obtained after completing the corresponding steps in preparing the coupler provided in the embodiments of this application.

[0054] Figure label:

[0055] 01-Communication equipment; 100-Transceiver module; 200-Processor;

[0056] 10-Coupler; 11-First insulating layer; 111-First dielectric layer; 112-First adhesive layer; 113-First groove; 12-Glass layer; 13-Second insulating layer; 131-Second dielectric layer; 132-Second adhesive layer; 133-Second groove; 14-First transmission line; 15-Second transmission line; 16-First matching stub; 161-First section; 162-Second section; 17-Second matching stub; 171-Third section; 172-Fourth section; 18-Metallic material; 19-Third insulating layer;

[0057] 20 - Circuit board;

[0058] 300 - MEMS switch; 400 - load. Detailed Implementation

[0059] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0060] The terms "first," "second," and similar terms used in this article do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, "one" or similar terms do not indicate a quantity limitation, but rather indicate the existence of at least one.

[0061] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design solutions. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a specific manner. In the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more.

[0062] Figure 1 This is a schematic diagram of the structure of the communication device 01 provided in an embodiment of this application. The communication device 01 can be applied to various fields, such as mobile communication, satellite communication, wireless local area networks, and the Internet of Things. The communication device 01 can be a terminal product such as a mobile phone, tablet computer, or drone; alternatively, the communication device 01 can also be a communication device such as a base station, routing equipment, server, or vehicle-mounted equipment.

[0063] Please refer to Figure 1 In one example, the communication device 01 may include a processor 200 and a transceiver module 100, wherein the processor 200 may be electrically connected to the transceiver module 100. The transceiver module 100 can serve as the window for information exchange between the communication device 01 and the outside world, and is responsible for receiving and transmitting signals. The processor 200 can be used to process signals to perform data decoding, encoding, and communication protocol management. For example, the processor 200 can be used to parse the signals received by the transceiver module 100, convert them into recognizable data, and perform corresponding processing according to the communication protocol. The processor 200 can also be used to encode the data to be transmitted into signals and send them out through the transceiver module 100.

[0064] In some examples, the communication device 01 may include many other components besides the processor 200 and transceiver module 100. These include, for example, a memory, a power supply module, and an interface module. The memory can be used to store data during communication for subsequent processing or retrieval; the power supply module is responsible for providing a stable power supply to the entire communication device 01, ensuring its continuous operation; and the interface module provides an interface for connecting with other devices or networks, enabling interconnection and communication between the communication device 01 and other devices.

[0065] Figure 2 This is a schematic diagram of the transceiver module 100 provided in an embodiment of this application. Please refer to... Figure 2 The transceiver module 100 may include a circuit board 20 and a coupler 10. The coupler 10 and the circuit board 20 are electrically connected. The circuit board 20 can be used to carry various electronic components and circuit connections to realize signal transmission and processing. The coupler 10 can be used to couple signals from one transmission medium to another to achieve signal transmission.

[0066] For example, circuit board 20 can be a rigid circuit board, a flexible circuit board, or a rigid-flex circuit board. Circuit board 20 can use FR-4 dielectric board, Rogers dielectric board, or a hybrid dielectric board of FR-4 and Rogers, etc. FR-4 is a designation for a flame-retardant material grade. Rogers dielectric board is a high-frequency board.

[0067] In addition to circuit board 20 and coupler 10, transceiver module 100 may also include other components such as amplifiers, filters, and mixers. Amplifiers can be used to enhance signal power, ensuring the signal can resist attenuation and interference during transmission; filters can be used to remove noise and clutter from the signal, improving signal purity; mixers can be used to perform frequency conversion of the signal to meet the needs of communication in different frequency bands. These components work together to enable transceiver module 100 to efficiently process various complex signals, ensuring smooth communication.

[0068] Since the performance of the coupler 10 directly affects the signal transmission quality and the overall system efficiency, achieving low coupling signal loss is crucial for the coupler 10. However, many couplers 10 suffer from significant coupling signal loss between the coupling lines. Therefore, this application provides a novel coupler 10 and its fabrication method, which can improve coupling performance and reduce coupling signal loss.

[0069] In some examples, the coupler 10 provided in this application can be applied in a phase shifter or other base station devices. This application does not limit this application. When the coupler 10 of this application is applied in a phase shifter, for example, it can be applied to a reflective micro-electro-mechanical system phase shifter (RF MEMS phase shifter). The reflective micro-electro-mechanical system phase shifter can also be called a reflective MEMS phase shifter, hereinafter referred to as a reflective MEMS phase shifter.

[0070] Figure 3 This is one of the structural schematic diagrams of a coupler applied to a reflective MEMS phase shifter according to an embodiment of this application. Figure 4 The second schematic diagram of the coupler applied to a reflective MEMS phase shifter according to the embodiments of this application is shown below. Figure 3 and Figure 4The reflective MEMS phase shifter may include a 3dB bridge (3dB Hybrid Coupler) and a MEMS switch (MEMS switch 300). The 3dB bridge, as a type of coupler, can adopt the coupler structure design of this application. The output and coupling terminals of the 3dB bridge can be connected to the input terminals of one MEMS switch 300, and the output terminals of the MEMS switch 300 can be connected to a load 400. That is, the output terminal of the 3dB bridge can be connected to one load 400 through the MEMS switch 300, and the coupling terminal of the 3dB bridge can be connected to another load 400 through the MEMS switch 300, thus forming two independent signal paths. When the MEMS switch 300 is in the ON state, the signal will flow to the corresponding load 400.

[0071] Reflective MEMS phase shifters typically use a MEMS switch 300 to change the reflected phase of a signal. When the MEMS switch 300 is in different states (such as on and off states), the phase of the reflected signal changes, thereby achieving phase modulation.

[0072] The coupler 10 provided in this application can adopt a wide-side coupling form or a narrow-side coupling form, and this application does not impose any limitation on this. For example, when the coupler 10 adopts a wide-side coupling form, Figure 5A This is one of the structural schematic diagrams of the coupler 10 provided in the embodiments of this application. Figure 5B This is a second schematic diagram of the structure of the coupler 10 provided in the embodiments of this application, which can be referred to as... Figure 5A and Figure 5B As shown.

[0073] The following section will describe in detail the structure and fabrication method of the coupler 10 when it adopts a wide-side coupling form, with reference to the relevant accompanying drawings.

[0074] Please refer to Figure 5A or Figure 5B This application provides a coupler 10, which may include a first insulating layer 11, a glass layer 12 and a second insulating layer 13 stacked together.

[0075] In some embodiments of this application, the stacking of the first insulating layer 11, the glass layer 12, and the second insulating layer 13 means that the glass layer 12 is located between the first insulating layer 11 and the second insulating layer 13, that is, the glass layer 12 is located on the first insulating layer 11, and the second insulating layer 13 is located on the side of the glass layer 12 away from the first insulating layer 11.

[0076] The coupler 10 of this application may further include a first transmission line 14 and a second transmission line 15, wherein the first transmission line 14 is disposed within the first insulating layer 11 and the second transmission line 15 is disposed within the second insulating layer 13.

[0077] In this way, the first transmission line 14 is located on one side of the glass layer 12, and the second transmission line 15 is located on the other side of the glass layer 12. The first transmission line 14 and the second transmission line 15 can avoid direct contact through the glass layer 12.

[0078] The specific state or position of the first transmission line 14 within the first insulating layer 11 is not limited in this application. For example, in some embodiments, the first transmission line 14 can be completely wrapped by the first insulating layer 11, that is, all surfaces of the first transmission line 14 are in contact with the first insulating layer 11; or, for another example, the side of the first transmission line 14 near the glass layer 12 can be exposed outside the first insulating layer 11, that is, the side of the first transmission line 14 near the glass layer 12 can be in direct contact with the glass layer 12.

[0079] The specific state or position of the second transmission line 15 within the second insulating layer 13 is not limited in this application. For example, in some embodiments, the second transmission line 15 can be completely wrapped by the second insulating layer 13, that is, all surfaces of the second transmission line 15 are in contact with the second insulating layer 13; or, for another example, the side of the second transmission line 15 near the glass layer 12 can be exposed outside the second insulating layer 13, that is, the side of the second transmission line 15 near the glass layer 12 can be in direct contact with the glass layer 12.

[0080] The coupler 10 provided in this application arranges the first transmission line 14 within the first insulating layer 11 and the second transmission line 15 within the second insulating layer 13, with the first insulating layer 11, glass layer 12, and second insulating layer 13 stacked. In this way, the first transmission line 14 and the second transmission line 15 are located in different layers, which can realize wide-side coupling of the first transmission line 14 and the second transmission line 15. Compared with narrow-side coupling, this application can increase the coupling area, improve the coupling strength, and expand the operating bandwidth of the coupler 10.

[0081] In some embodiments, the coupler 10 may further include a first reference ground layer and a second reference ground layer. For example, the first reference ground layer may be located on the side of the first insulating layer 11 away from the glass layer 12, and the second reference ground layer may be located on the side of the second insulating layer 13 away from the glass layer 12.

[0082] The first and second reference ground layers can be metallic layers, serving as electrical reference planes for signals. The arrangement of the first and second reference ground layers helps improve the stability and consistency of signals during transmission. Furthermore, the first and second reference ground layers also act as shielding, reducing the impact of external electromagnetic interference on the performance of the coupler 10. By using the first and second reference ground layers, the coupler 10 can provide stable electrical reference and shielding functions, contributing to improved reliability in various application environments.

[0083] When the coupler 10 includes a first reference ground layer, the first insulating layer 11 can achieve electrical insulation between the first reference ground and the first transmission line 14, avoiding direct contact between the first reference ground and the first transmission line 14.

[0084] When the coupler 10 includes a second reference ground layer, the second insulating layer 13 can achieve electrical insulation between the second reference ground and the second transmission line 15, avoiding direct contact between the second reference ground and the second transmission line 15.

[0085] In some embodiments, the projection of the first transmission line 14 onto the glass layer 12 at least partially overlaps with the projection of the second transmission line 15 onto the glass layer 12. By making the projections of the first transmission line 14 and the second transmission line 15 onto the glass layer 12 at least partially coincide, this application can increase the coupling area of ​​the coupler 10, more effectively utilize the electromagnetic field interaction between the first transmission line 14 and the second transmission line 15, thereby improving the coupling performance of the coupler 10, reducing insertion loss, and contributing to better signal transmission and power distribution.

[0086] For example, the projections of the first transmission line 14 onto the glass layer 12 and the second transmission line 15 onto the glass layer 12 can partially or completely overlap, depending on the specific application requirements. For instance, when a higher coupling effect is needed, the projections of the first transmission line 14 onto the glass layer 12 can be completely overlapped; when a lower coupling level is needed, the projections of the first transmission line 14 onto the glass layer 12 can be partially overlapped.

[0087] The coupler 10 of this application uses a glass layer 12 in the layer between the first transmission line 14 and the second transmission line 15. Because glass has a high resistivity, it can reduce current leakage; moreover, as a low-loss material, glass has a low loss tangent, which means that the absorption and scattering of electromagnetic waves by the glass are small during electromagnetic wave propagation. Therefore, when the signal is transmitted in the glass layer 12, the loss of the coupled signal can be reduced, the coupling performance can be improved, and the insertion loss can be reduced.

[0088] Please continue to refer to this. Figure 5A or Figure 5B In one possible implementation, the surface of the first transmission line 14 near the glass layer 12 is in contact with the glass layer 12, and the surface of the first transmission line 14 near the glass layer 12 is flush with the surface of the first insulating layer 11 near the glass layer 12.

[0089] That is, the surface of the first transmission line 14 near the glass layer 12 and the surface of the first insulating layer 11 near the glass layer 12 are coplanar, and the surfaces of the first transmission line 14 near the glass layer 12 and the first insulating layer 11 near the glass layer 12 are both in contact with the glass layer 12.

[0090] This application reduces the distance between the first transmission line 14 and the second transmission line 15 by making the surface of the first transmission line 14 near the glass layer 12 adhere to the glass layer 12, which is beneficial to improving the coupling performance of the first transmission line 14 and the second transmission line 15. This application also aligns the surface of the first transmission line 14 near the glass layer 12 with the surface of the first insulating layer 11 near the glass layer 12, effectively embedding the first transmission line 14 into the first insulating layer 11. This reduces the height difference between the side of the first transmission line 14 near the glass layer 12 and the side of the first insulating layer 11 near the glass layer 12, resulting in better flatness and adhesion between the glass layer 12 and the first insulating layer 11 and the first transmission line 14 respectively when fabricating the glass layer 12 on the first transmission line 14 and the first insulating layer 11, thus reducing the risk of the glass layer 12 cracking.

[0091] In one feasible approach, please refer to [the relevant documentation / reference]. Figure 5A or Figure 5B The surface of the second transmission line 15 near the glass layer 12 is in contact with the glass layer 12, and the surface of the second transmission line 15 near the glass layer 12 is flush with the surface of the second insulating layer 13 near the glass layer 12.

[0092] That is, the surface of the first transmission line 14 near the glass layer 12 and the surface of the first insulating layer 11 near the glass layer 12 are coplanar, and the surfaces of the first transmission line 14 near the glass layer 12 and the first insulating layer 11 near the glass layer 12 are both in contact with the glass layer 12.

[0093] This application reduces the distance between the first transmission line 14 and the second transmission line 15 by making the surface of the second transmission line 15 near the glass layer 12 adhere to the glass layer 12, which is beneficial to improving the coupling performance of the first transmission line 14 and the second transmission line 15. This application also aligns the surface of the second transmission line 15 near the glass layer 12 with the surface of the second insulating layer 13 near the glass layer 12, effectively embedding the second transmission line 15 into the second insulating layer 13. This reduces the height difference between the surface of the second transmission line 15 near the glass layer 12 and the surface of the second insulating layer 13 near the glass layer 12, resulting in better flatness and adhesion between the glass layer 12 and the second insulating layer 13 and the second transmission line 15 when fabricating the glass layer 12 on the second transmission line 15 and the second insulating layer 13, thus reducing the risk of cracking of the glass layer 12.

[0094] In this embodiment, the coplanarity and flush arrangement of the two surfaces mentioned can be either absolutely coplanar or relatively coplanar (relative coplanar and flush means that a certain degree of error is allowed). For example, the surface of the second transmission line 15 near the glass layer 12 is flush with the surface of the second insulating layer 13 near the glass layer 12, which can be either absolutely flush or relatively flush.

[0095] For example, when the surface of the first transmission line 14 near the glass layer 12 is relatively flush with the surface of the first insulating layer 11 near the glass layer 12, the flatness of the surface of the first transmission line 14 near the glass layer 12 and the surface of the first insulating layer 11 near the glass layer 12 can be less than 100 nm; when the surface of the second transmission line 15 near the glass layer 12 and the surface of the second insulating layer 13 near the glass layer 12 are relatively flush, the flatness of the surface of the second transmission line 15 near the glass layer 12 and the surface of the second insulating layer 13 near the glass layer 12 can be less than 100 nm. That is, a certain degree of error is allowed, for example, if the flatness of the two surfaces is less than 100 nm, the two surfaces can be considered to be flush or coplanar.

[0096] Furthermore, the surface of the first transmission line 14 near the glass layer 12 refers to the surface of the first transmission line 14 that is closest to the glass layer 12 among its two opposing surfaces; it can also be referred to as the surface of the first transmission line 14 that faces or is oriented towards the glass layer 12 among its two opposing surfaces. The same principle applies to the surfaces of the first insulating layer 11, the second transmission line 15, and the second insulating layer 13 near the glass layer 12. To avoid redundancy, this application will not repeat the explanation.

[0097] For ease of understanding, Figure 5A Taking the orientation shown as an example, the surface of the first transmission line 14 near the glass layer 12 is the lower surface of the first transmission line 14, the surface of the first insulating layer 11 near the glass layer 12 is the lower surface of the first insulating layer 11, the surface of the second transmission line 15 near the glass layer 12 is the upper surface of the second transmission line 15, and the surface of the second insulating layer 13 near the glass layer 12 is the upper surface of the second insulating layer 13.

[0098] This application does not limit the specific materials of the first insulating layer 11 and the second insulating layer 13, which can be determined according to actual application requirements. For example, the first insulating layer 11 and the second insulating layer 13 can both be dielectric layers, or both can be glass layers 12, or one insulating layer can be a dielectric layer and the other insulating layer can be a glass layer 12. Several typical scenarios will be illustrated below. It should be understood that the following scenarios are only examples of some of the various situations in this application and do not represent all feasible solutions of this application.

[0099] For example, in one possible implementation, the materials of the first insulating layer 11 and the second insulating layer 13 both include glass.

[0100] Because glass has a high resistivity, it can reduce current leakage; moreover, as a low-loss material, glass has a low loss tangent, which means that glass has a small absorption and scattering effect on electromagnetic waves during propagation. Therefore, the first insulating layer 11 and the second insulating layer 13 of this application are both made of glass, which can reduce signal loss and insertion loss when the signal is transmitted between the coupler 10 and other devices.

[0101] In one possible implementation, the thickness of the first transmission line 14 and the thickness of the second transmission line 15 are both 4μm-20μm. For example, the thickness of the first transmission line 14 can be 4μm, 5μm, 8μm, 10μm, 15μm, or 20μm, and the thickness of the second transmission line 15 can be 4μm, 5μm, 8μm, 10μm, 15μm, or 20μm, etc.

[0102] In this embodiment, the thickness of the first transmission line 14 and the thickness of the second transmission line 15 can be the same or different. The specific thickness can be determined according to the actual application scenario of the coupler 10, and this application does not impose any restrictions.

[0103] In this application, the thickness of the first transmission line 14 and the thickness of the second transmission line 15 are both set to 4μm-20μm. Thus, when the first insulating layer 11 and the second insulating layer 13 include glass, the thickness of the first transmission line 14 and the thickness of the second transmission line 15 are both less than or equal to 20μm, which facilitates etching of the first insulating layer 11 and the second insulating layer 13 to form grooves for embedding the corresponding transmission lines, thereby improving the machinability of the first insulating layer 11 and the second insulating layer 13. The thickness of the first transmission line 14 and the thickness of the second transmission line 15 are both greater than or equal to 4μm, which can reduce the material loss of the first transmission line 14 and the second transmission line 15, improve the metal conductivity, and reduce insertion loss.

[0104] In another possible implementation, the materials of the first insulating layer 11 and the second insulating layer 13 both include dielectric materials, for example, the materials of the first insulating layer 11 and the second insulating layer 13 both include silicon.

[0105] The first insulating layer 11 and the second insulating layer 13 of this application both contain silicon. Because silicon has high chemical stability and does not readily react with most chemicals, it maintains stable performance even in harsh environments, enabling the coupler 10 to operate stably for extended periods. Furthermore, the abundant reserves of silicon provide a sufficient raw material guarantee for the large-scale mass production of the coupler 10, helping to ensure its continuous production and supply.

[0106] In another possible implementation, the first insulating layer 11 of this application may include not only a dielectric layer but also an adhesive layer, for example, please refer to Figure 5B The first insulating layer 11 may include a first dielectric layer 111 and a first adhesive layer 112 stacked together, the first adhesive layer 112 being located between the first dielectric layer 111 and the glass layer 12, and the first transmission line 14 being located within the first adhesive layer 112.

[0107] That is, when the first insulating layer 11 includes the first dielectric layer 111 and the first adhesive layer 112, the first transmission line 14 can be embedded in the first adhesive layer 112.

[0108] The first insulating layer 11 of this application includes a first dielectric layer 111 and a first adhesive layer 112. The first adhesive layer 112 is located between the first dielectric layer 111 and the glass layer 12, and the first transmission line 14 is located within the first adhesive layer 112. Thus, when fabricating the coupler 10, the first transmission line 14 can be fabricated on one side surface of the first dielectric layer 111, and then the first adhesive layer 112 can be spin-coated onto the first dielectric layer 111 to surround the first transmission line 14, so that the surface of the first adhesive layer 112 facing away from the first dielectric layer 111 is flush with the surface of the first transmission line 14 facing away from the first dielectric layer 111. The presence of the first adhesive layer 112 effectively fills the gap between the first dielectric layer 111 and the glass layer 12, improving the flatness of the first insulating layer 11 and the first transmission line 14, thereby reducing the risk of cracking during the fabrication of the glass layer 12 to a certain extent.

[0109] In some examples, the second insulating layer 13 includes a stacked second dielectric layer 131 and a second adhesive layer 132, the second adhesive layer 132 being located between the second dielectric layer 131 and the glass layer 12, and the second transmission line 15 being located within the second adhesive layer 132.

[0110] That is, when the second insulating layer 13 includes the second dielectric layer 131 and the second adhesive layer 132, the second transmission line 15 can be embedded in the second adhesive layer 132.

[0111] The second insulating layer 13 of this application includes a second dielectric layer 131 and a second adhesive layer 132. The second adhesive layer 132 is located between the second dielectric layer 131 and the glass layer 12, and the second transmission line 15 is located within the second adhesive layer 132. Thus, when fabricating the coupler 10, the second transmission line 15 can be fabricated on one side surface of the second dielectric layer 131, and then the second adhesive layer 132 can be spin-coated onto the second dielectric layer 131 to surround the second transmission line 15, so that the surface of the second adhesive layer 132 facing away from the second dielectric layer 131 and the surface of the second transmission line 15 facing away from the second dielectric layer 131 are flush. The placement of the second adhesive layer 132 effectively fills the gap between the second dielectric layer 131 and the glass layer 12, improving the flatness of the second insulating layer 13 and the second transmission line 15, thereby reducing the risk of cracking during the fabrication of the glass layer 12.

[0112] Due to the high chemical stability of silicon, it can maintain stable performance in harsh environments, which is beneficial for the long-term stable operation of coupler 10. Furthermore, silicon is abundant, providing sufficient raw material for the large-scale mass production of coupler 10, thus facilitating its continuous production and supply. Therefore, in one possible implementation, the materials of the first dielectric layer 111 and the second dielectric layer 131 may include silicon.

[0113] In some examples, the materials of the first adhesive layer 112 and the second adhesive layer 132 may both include semi-cured adhesives.

[0114] Because semi-cured adhesives have a certain degree of fluidity and plasticity before curing, they are easy to apply and position. Therefore, this application can effectively fill the gap between the corresponding dielectric layer and glass layer 12 by using semi-cured adhesives; and after curing, the semi-cured adhesives can form a high-strength adhesive layer, which can also improve the structural stability and reliability of the coupler 10.

[0115] For example, the semi-cured adhesive can be epoxy resin adhesive, polyurethane adhesive, etc. Of course, the types of semi-cured adhesives described above are merely examples and should not be considered as limitations on this application.

[0116] In one feasible approach, please refer to the following references. Figure 5A , Figure 7 and Figure 8 As shown, the coupler 10 may further include a first matching stub 16 and a second matching stub 17. The first matching stub 16 is connected to one end of the first transmission line 14, and the second matching stub 17 is connected to one end of the second transmission line 15. One of the ends of the first transmission line 14 connected to the first matching stub 16 and the second transmission line 15 connected to the second matching stub 17 is the signal input terminal of the coupler 10, and the other is the isolation terminal of the coupler 10.

[0117] That is, the coupler 10 of this application may further include a first matching branch 16 and a second matching branch 17, wherein one of the first matching branch 16 and the second matching branch 17 is connected to the signal input terminal of the coupler 10, and the other is connected to the isolation terminal of the coupler 10. For example, the first matching branch 16 is connected to the signal input terminal of the coupler 10, and the second matching branch 17 is connected to the isolation terminal of the coupler 10.

[0118] Matching stubs are provided at the signal input and isolation terminals of coupler 10. The impedance of the corresponding port of coupler 10 can be adjusted by these matching stubs to match the characteristic impedance of the transmission line. For example, when a matching stub is connected to the signal input terminal, this stub can reduce signal reflection, thereby reducing return loss and improving signal transmission efficiency. Furthermore, the matching stub can help optimize the electromagnetic field distribution inside coupler 10, allowing more signal energy to be coupled to the output terminal instead of leaking to other ports or generating unnecessary radiation.

[0119] Connecting a matching stub to the isolation terminal can further enhance the isolation performance of coupler 10. The isolation terminal is the port in coupler 10 where no signal output is desired. By connecting a matching stub, signals leaking from this port can be absorbed or reflected, thereby reducing interference to other circuits or devices.

[0120] In some examples, please refer to Figure 7 The first matching stub 16 may include a first portion 161 and a second portion 162, with the first portion 161 connected between the second portion 162 and the first transmission line 14. The dimension of the first portion 161 along the first direction is smaller than the dimension of the second portion 162 along the first direction.

[0121] That is, the first matching branch 16 may include a first part 161 and a second part 162 connected to each other, wherein the first part 161 is located between the second part 162 and the first transmission line 14, and the two ends of the first part 161 are respectively connected to the second part 162 and the first transmission line 14.

[0122] The dimension of the first part 161 along the first direction is smaller than the dimension of the second part 162 along the first direction, wherein the first direction is... Figure 7 The horizontal direction shown in the diagram. That is, the first matching stub 16 widens from the first transmission line 14 away from the first transmission line 14. The narrow-to-wide design of the first matching stub 16 makes it electrically exhibit capacitive characteristics, equivalent to a parallel capacitor, which helps to compensate for the inductive component in the coupler 10, achieve good matching over a wider frequency band, thereby improving the directivity of signal transmission and enhancing the isolation effect at the isolation end.

[0123] In some examples, please refer to Figure 8 The second matching stub 17 may include a third part 171 and a fourth part 172, the third part 171 being connected between the fourth part 172 and the second transmission line 15; the dimension of the third part 171 along the first direction is smaller than the dimension of the fourth part 172 along the first direction.

[0124] That is, the second matching branch 17 may include a third part and a fourth part 172 connected together, wherein the third part 171 is located between the fourth part 172 and the second transmission line 15, and the two ends of the third part 171 are respectively connected to the fourth part 172 and the second transmission line 15.

[0125] The dimension of the third part 171 along the first direction is smaller than the dimension of the fourth part 172 along the first direction, wherein the third direction is... Figure 8 The horizontal direction shown in the diagram. That is, the second matching stub 17 widens from the second transmission line 15 in a direction away from the second transmission line 15. The narrow-to-wide design of the second matching stub 17 makes it electrically exhibit capacitive characteristics, equivalent to a parallel capacitor, which can compensate for the inductive component in the coupler 10, achieve good matching over a wider frequency band, improve the directivity of signal transmission, and enhance the isolation effect at the isolation end.

[0126] In some examples, the arrangement directions of the first insulating layer 11 and the second insulating layer 13, the arrangement directions of the first portion 161 and the second portion 162, and the first direction are arranged perpendicularly to each other. That is, the arrangement directions of the first insulating layer 11 and the second insulating layer 13 are perpendicular to the arrangement directions of the first portion 161 and the second portion 162, the arrangement directions of the first insulating layer 11 and the second insulating layer 13 are perpendicular to the first direction, and the arrangement directions of the first portion 161 and the second portion 162 are perpendicular to the first direction.

[0127] In one feasible approach, please refer to the following: Figure 7 and Figure 8 As shown, the first transmission line 14 and the second transmission line 15 are both strip structures with a bent shape. That is, the first transmission line 14 and the second transmission line 15 are both strip structures, and the strip structures are arranged in a bent shape. For example, the strip structure can be a broken line shape, or the strip structure can be a smoothly transitioned curve shape.

[0128] By setting the first transmission line 14 and the second transmission line 15 as a bent strip structure, the coupling area of ​​the first transmission line 14 and the second transmission line 15 can be increased within the limited coupler size, achieving the effect of wide-side tight coupling and reducing device insertion loss.

[0129] The dimension of the first transmission line 14 along the first direction is larger than the dimension of the first transmission line 14 along the second direction, and the dimension of the second transmission line 15 along the first direction is larger than the dimension of the second transmission line 15 along the second direction. The arrangement directions of the first insulating layer 11 and the second insulating layer 13, the first direction, and the second direction are arranged perpendicularly to each other.

[0130] The first direction is the length direction of the first transmission line 14 or the second transmission line 15, the second direction is the width direction of the first transmission line 14 or the second transmission line 15, and the arrangement direction of the first insulating layer 11 and the second insulating layer 13 is the thickness direction of the first transmission line 14 or the second transmission line 15.

[0131] The dimension of the first transmission line 14 along the first direction is larger than its dimension along the second direction, and the dimension of the second transmission line 15 along the first direction is larger than its dimension along the second direction. This means that the length direction of the first transmission line 14 is the first direction, and the length direction of the second transmission line 15 is also the first direction, meaning that the length directions of the first transmission line 14 and the second transmission line 15 are the same. Thus, by configuring the first transmission line 14 and the second transmission line 15 as bent strip structures, the coupling area of ​​the first transmission line 14 and the second transmission line 15 can be increased.

[0132] In one possible implementation, the dimension of the first transmission line 14 along the second direction can be 100μm-200μm, where the second direction is the width direction of the first transmission line 14 or the second transmission line 15. For example, the dimension of the first transmission line 14 along the second direction can be 100μm, 120μm, 150μm, 180μm, or 200μm, etc.

[0133] The dimension of the second transmission line 15 along the second direction can be 100μm-200μm, where the second direction is the width direction of the first transmission line 14 or the second transmission line 15. For example, the dimension of the second transmission line 15 along the second direction can be 100μm, 120μm, 150μm, 180μm, or 200μm, etc.

[0134] The dimensions of the first transmission line 14 and the second transmission line 15 along the second direction can be the same or different. For example, the dimensions of the first transmission line 14 and the second transmission line 15 along the second direction can be the same, for example, the dimensions of the first transmission line 14 and the second transmission line 15 along the second direction can both be 150μm.

[0135] The dimensions of the first transmission line 14 along the second direction are 100μm-200μm, and the dimensions of the second transmission line 15 along the second direction are 100μm-200μm. In this way, the first transmission line 14 and the second transmission line 15 can meet the impedance matching requirements, reduce transmission loss, and improve the current carrying capacity of the transmission lines.

[0136] In some examples, the thickness of glass layer 12 can be 10 μm to 100 μm. For example, the thickness of glass layer 12 can be 10 μm, 20 μm, 30 μm, 50 μm, 80 μm, or 100 μm, etc. For example, the thickness of glass layer 12 can be 20 μm to 30 μm. For example, the thickness of glass layer 12 is 25 μm.

[0137] In this application, the thickness of the glass layer 12 is set between 10 μm and 100 μm. On the one hand, this can reduce the coupling distance between the first transmission line 14 and the second transmission line 15, shorten the coupling path, and reduce the loss of the coupled signal. On the other hand, it can reduce the thickness of the coupler 10 and achieve miniaturization of the coupler 10.

[0138] In one possible implementation, the thickness of the first insulating layer 11 can be 300μm-1000μm. For example, the thickness of the first insulating layer 11 can be 300μm, 400μm, 500μm, 700μm, or 1000μm, etc.

[0139] In one possible implementation, the thickness of the second insulating layer 13 can be 300 μm to 1000 μm. For example, the thickness of the second insulating layer 13 can be 300 μm, 400 μm, 500 μm, 700 μm, or 1000 μm, etc.

[0140] The thickness of the first insulating layer 11 and the thickness of the second insulating layer 13 can be the same or different. When the thickness of the first insulating layer 11 and the thickness of the second insulating layer 13 are the same, for example, the thickness of the first insulating layer 11 and the thickness of the second insulating layer 13 can be 450 μm each.

[0141] This application sets the thickness of the first insulating layer 11 and the thickness of the second insulating layer 13 to between 300μm and 1000μm respectively, which can reduce the thickness of the coupler 10 and facilitate the miniaturization of the coupler 10.

[0142] Figure 9 This is one of the schematic flowcharts illustrating the fabrication method of the coupler 10 provided in the embodiments of this application. Figures 10 to 18 For one of the structural schematic diagrams obtained after completing the corresponding steps in fabricating the coupler 10 provided in this embodiment, please refer to... Figures 9 to 18 This application also provides a method for fabricating a coupler 10, which includes steps S100-S500.

[0143] S100, A first transmission line 14 is formed within the first insulating layer 11.

[0144] See Figure 12In step S100, a first transmission line 14 needs to be formed in the first insulating layer 11. The first transmission line 14 can be a metal layer with thickness. This application does not limit the specific values ​​of the length, width and thickness of the first transmission line 14, but can refer to the above description.

[0145] The material of the first insulating layer 11 may include glass; or, the material of the first insulating layer 11 may include a dielectric, such as silicon.

[0146] The first insulating layer 11 may contain only one material or may include multiple materials. For example, the first insulating layer 11 may include two materials, such as a dielectric layer and an adhesive layer.

[0147] The first transmission line 14 can be flush with one side surface of the first insulating layer 11, such as Figure 12 As shown, the first transmission line 14 can be embedded in the first insulating layer 11, and one side surface of the first transmission line 14 is flush with one side surface of the first insulating layer 11.

[0148] The flushness of one side surface of the first transmission line 14 with one side surface of the first insulating layer 11 can be achieved through a chemical mechanical planarization (CMP) process. For example, a polishing pad can be placed on a polishing disc, and the first insulating layer 11 can be fixed below the polishing pad, so that the first transmission line 14 is directly opposite the polishing pad. Then, polishing slurry is added between the first insulating layer 11 and the polishing pad. Under a certain pressure, the polishing pad is rotated, and the polishing slurry is uniformly coated between the polishing pad and the first insulating layer 11 under the rotational action. The surface of the first insulating layer 11 is planarized through the alternating action of chemical and mechanical removal. By optimizing the polishing selectivity ratio of the polishing slurry to the first insulating layer 11 and the first transmission line 14, the surface flatness of the first insulating layer 11 and the first transmission line 14 can be controlled to achieve a surface flatness of less than 100 nm.

[0149] That is, this application can achieve the flush setting of one side surface of the first transmission line 14 with one side surface of the first insulating layer 11 by CMP process. The flush setting can be absolute or allow for a certain error. For example, the surface flatness of one side surface of the first transmission line 14 and one side surface of the first insulating layer 11 is less than 100nm, which can be considered as a flush setting.

[0150] S200, the first insulating layer 11 and the glass layer 12 are bonded together.

[0151] S300, The side of the glass layer 12 facing away from the first insulating layer 11 is thinned.

[0152] See Figure 13 After step S100 is completed, the glass layer 12 can be bonded to one side of the first insulating layer 11.

[0153] The thickness of the glass layer 12 and the thickness of the first insulating layer 11 can be referred to the foregoing description, and this application does not impose any limitations on them. In addition, all relevant parameters of all layers involved in the preparation method of this application can be referred to the foregoing description unless there is contradiction. To avoid repetition, the same content will not be repeated in the preparation method section.

[0154] In step S200, to ensure better reliability and reduce the risk of glass layer 12 cracking, the thickness of glass layer 12 in step S200 can initially be selected to be greater than 200 μm. This glass layer 12 can then be thinned in subsequent step S300. Selecting a glass layer 12 with a thickness greater than 200 μm for bonding with the first insulating layer 11 can improve the reliability of the fabrication process and reduce the risk of glass layer 12 cracking during bonding. Performing the thinning process in step S300 after step S200 can reduce the device thickness and achieve device miniaturization.

[0155] In step S300, after thinning the side of the glass layer 12 away from the first insulating layer 11, the thinned glass layer 12 can be polished.

[0156] S400, a second transmission line 15 is formed within the second insulating layer 13.

[0157] See Figure 17 The second transmission line 15 can be a metal layer with a certain thickness.

[0158] The material of the second insulating layer 13 may include glass; or, the material of the second insulating layer 13 may include a dielectric, such as silicon.

[0159] The second insulating layer 13 may contain only one material or may include multiple materials. For example, the second insulating layer 13 may include two materials, such as a dielectric layer and an adhesive layer.

[0160] The second transmission line 15 can be flush with one side surface of the second insulating layer 13, such as Figure 17 As shown, the second transmission line 15 can be embedded in the second insulating layer 13, and one side surface of the second transmission line 15 is flush with one side surface of the second insulating layer 13.

[0161] The flush alignment of one side surface of the second transmission line 15 with one side surface of the second insulating layer 13 can be achieved using a CMP process. This alignment can be absolute or allow for some degree of error; for example, a surface flatness of less than 100 nm between the two sides is considered a flush alignment.

[0162] By making the surface of the first transmission line 14 close to the glass layer 12 and the surface of the second transmission line 15 close to the glass layer 12, the distance between the first transmission line 14 and the second transmission line 15 can be reduced, which is beneficial to improving the coupling performance of the first transmission line 14 and the second transmission line 15.

[0163] By aligning the surface of the first transmission line 14 near the glass layer 12 with the surface of the first insulating layer 11 near the glass layer 12, and aligning the surface of the second transmission line 15 near the glass layer 12 with the surface of the second insulating layer 13 near the glass layer 12, it is equivalent to embedding the first transmission line 14 and the second transmission line 15 into the corresponding insulating layers. This reduces the height difference between the side of the transmission line near the glass layer 12 and the side of the corresponding insulating layer near the glass layer 12. Consequently, when bonding the glass layer 12 is required, the flatness of the glass layer 12 with the second insulating layer 13 and the first insulating layer 11 is improved, reducing the risk of glass layer 12 cracking.

[0164] S500, the second insulating layer 13 and the glass layer 12 are bonded together so that the second insulating layer 13 is located on the side of the glass layer 12 away from the first insulating layer 11.

[0165] That is, the second insulating layer 13 is bonded to the side of the glass layer 12 opposite to the first insulating layer 11, such as... Figure 18 As shown.

[0166] The coupler 10 prepared by the above-described method has the following advantages: First, the first transmission line 14 and the second transmission line 15 are located in different layers, which enables wide-side coupling of the first transmission line 14 and the second transmission line 15. Compared with narrow-side coupling, this increases the coupling area, improves the coupling strength, and expands the operating bandwidth of the coupler 10. Second, the layer between the first transmission line 14 and the second transmission line 15 is a glass layer 12. Because glass has a high resistivity, it can reduce current leakage. Moreover, the loss tangent of glass is low, and its absorption and scattering of electromagnetic waves during electromagnetic wave propagation are small. This reduces the loss of the coupled signal when the signal is transmitted in the glass layer 12, improves the coupling performance, and reduces insertion loss.

[0167] The formation of the first transmission line 14 in step S100 above can be achieved in various ways. Two of these methods will be illustrated below. In the first method... Figure 19 This is the second schematic flowchart illustrating the fabrication method of the coupler 10 provided in this application embodiment. Please refer to [reference needed]. Figure 19 as well as Figures 10 to 14 Step S100, forming the first transmission line 14 within the first insulating layer 11, may include steps S11A-S13A; in a second possible implementation, Figure 20 This is the third schematic flowchart illustrating the fabrication method of the coupler 10 provided in this application embodiment. Please refer to [reference needed]. Figures 20 to 26 The above step S100, forming the first transmission line 14 within the first insulating layer 11, may include steps S11B-S12B. Examples of the two methods described above will be provided below.

[0168] For example, in the first possible implementation, please refer to [reference needed]. Figure 19 as well as Figures 10 to 14 Step S100, forming a first transmission line 14 within the first insulating layer 11, may include steps S11A-S13A.

[0169] S11A, A first groove 113 is formed on one side of the first insulating layer 11.

[0170] See Figure 10 The first groove 113 is formed on one side of the first insulating layer 11. The first groove 113 can be formed by etching, for example, by using an etching process to form the first groove 113 on one side of the first insulating layer 11.

[0171] The depth, width, and length of the first groove 113 can be determined according to the relevant dimensions of the transmission line formed in the first groove 113 as needed later.

[0172] S12A, depositing a metallic material 18 on one side of the first insulating layer 11 having a first groove 113.

[0173] S13A, Remove the metal material 18 outside the first groove 113 to obtain the first transmission line 14 located in the first groove 113.

[0174] Combined with reference Figures 11 to 12 After depositing metal material 18 on the side of the first insulating layer 11 with the first groove 113, the metal material 18 outside the first groove 113 can be removed to obtain the first transmission line 14 located within the first groove 113. Removing the metal material 18 outside the first groove 113 can improve the surface flatness of the first transmission line 14 and the first insulating layer 11, thereby facilitating subsequent bonding processes.

[0175] The surface of the first transmission line 14 exposed outside the first insulating layer 11 can be flush with one side surface of the first insulating layer 11. This improves the surface flatness of the first insulating layer 11 and the first transmission line 14.

[0176] When step S100, forming the first transmission line 14 within the first insulating layer 11, including steps S11A-S13A, see... Figure 13 Step S200, bonding the first insulating layer 11 and the glass layer 12, can be done by bonding the side of the first insulating layer 11 closest to the first transmission line 14 to the glass layer 12.

[0177] After bonding the side of the first insulating layer 11 closest to the first transmission line 14 to the glass layer 12, the glass layer 12 can be thinned, such as... Figure 14 As shown.

[0178] Please refer to the reference. Figures 15 to 19 In some examples, step S400, forming the second transmission line 15 within the second insulating layer 13, may include steps S41A-S43A.

[0179] S41A, a second groove 133 is formed on one side of the second insulating layer 13.

[0180] See Figure 15 The second groove 133 is formed within the second insulating layer 13. For example, the second groove 133 located within the second insulating layer 13 can be formed by an etching process.

[0181] The dimensional parameters such as the depth, width, and length of the second groove 133 can be determined according to the relevant dimensions of the transmission line formed in the second groove 133 as needed later.

[0182] S42A, depositing a metallic material 18 on the side of the second insulating layer 13 having the second groove 133, such as Figure 16 As shown.

[0183] S43A, Remove the metal material 18 outside the second groove 133 to obtain the second transmission line 15 located inside the second groove 133.

[0184] Combined with reference Figures 15 to 17 After depositing metal material 18 on the side of the second insulating layer 13 with the second groove 133, the metal material 18 outside the second groove 133 can be removed, thereby obtaining the second transmission line 15 located within the second groove 133. Removing the metal material 18 outside the second groove 133 can improve the surface flatness of the second transmission line and the second insulating layer 13, thus facilitating subsequent bonding processes.

[0185] The surface of the second transmission line 15 exposed outside the second insulating layer 13 can be flush with one side surface of the second insulating layer 13, thereby improving the surface flatness of the second transmission line 15 and the second insulating layer 13.

[0186] When step S400, forming the second transmission line 15 within the second insulating layer 13, including steps S41A-S43A, please refer to... Figure 18 Step S500, bonding the second insulating layer 13 and the glass layer 12, can be done by bonding the side of the second insulating layer 13 closest to the second transmission line 15 to the glass layer 12.

[0187] This application uses the above steps S11A-S13A to form the first transmission line 14 in the first insulating layer 11 and steps S41A-S43A to form the second transmission line 15 in the second insulating layer 13. This can improve the surface flatness of the transmission line and the corresponding insulating layer, thereby reducing the risk of glass layer 12 cracking when the first insulating layer 11 and the second insulating layer 13 are bonded to the opposite sides of the glass layer 12, and improving the yield of coupler 10 fabrication.

[0188] For example, in the second possible implementation method, Figures 21 to 26 This is the second schematic diagram of the structure obtained after completing the corresponding steps in preparing the coupler 10 provided in this embodiment. Please refer to the attached diagram. Figures 20 to 23 The above step S100, forming the first transmission line 14 in the first insulating layer 11, may include steps S11B-S12B.

[0189] S11B, A first transmission line 14 is formed on one side of the first dielectric layer 111.

[0190] See Figure 21 The first transmission line 14 is formed on one side surface of the first dielectric layer 111. For example, the first transmission line 14 can be obtained by depositing a metal layer on one side surface of the first dielectric layer 111 and patterning it.

[0191] S12B, spin-coating an adhesive material onto the side of the first dielectric layer 111 having the first transmission line 14 to form a first adhesive layer 112, the first adhesive layer 112 and the first dielectric layer 111 forming a first insulating layer 11.

[0192] That is, see Figure 22 In step S12B, the first adhesive layer 112 can be obtained by spin-coating adhesive material around the outer periphery of the first transmission line 14. By forming the first adhesive layer 112, the height difference between the first transmission line 14 and the first dielectric layer 111 can be filled, improving the surface flatness of the device and facilitating subsequent bonding processes. For example, see... Figure 23When bonding the glass layer 12 to the first adhesive layer 112 and the first transmission line 14, the surface of the glass layer 12 can be bonded to the first adhesive layer 112 and the first transmission line 14 respectively due to the setting of the first adhesive layer 112, resulting in better bonding and reducing the risk of cracking when bonding the glass layer 12.

[0193] Please refer to the reference. Figure 20 , Figures 24 to 26 In some examples, step S400 above, forming the second transmission line 15 within the second insulating layer 13, may include steps S41B-S42B.

[0194] S41B, A second transmission line 15 is formed on one side of the second dielectric layer 131.

[0195] See Figure 24 The second transmission line 15 is formed on one side surface of the second dielectric layer 131. For example, the second transmission line 15 can be obtained by depositing a metal layer on one side surface of the second dielectric layer 131 and patterning it.

[0196] S42B, spin-coating an adhesive material onto the side of the second dielectric layer 131 having the second transmission line 15 to form a second adhesive layer 132, the second adhesive layer 132 and the second dielectric layer 131 forming a second insulating layer 13.

[0197] That is, see Figure 25 The second adhesive layer 132 in step S42B can be obtained by applying an adhesive layer material to the outer periphery of the second transmission line 15. Forming the second adhesive layer 132 can fill the height difference between the second transmission line 15 and the second dielectric layer 131, improving the surface flatness of the device. For example, see... Figure 26 When bonding the glass layer 12 to the second adhesive layer 132 and the second transmission line 15, the surface of the glass layer 12 can be bonded to the second adhesive layer 132 and the first transmission line 14 respectively due to the setting of the second adhesive layer 132, which can reduce the risk of cracking when bonding the glass layer 12.

[0198] This application forms a first transmission line 14 within the first insulating layer 11 through steps S11B-S12B and a second transmission line 15 within the second insulating layer 13 through steps S41B-S42B. This allows the corresponding transmission lines to be fabricated on one side of the corresponding dielectric layer, ensuring that the adhesive layer and the transmission lines are flush with each other. The formation of the adhesive layer effectively fills the gap between the dielectric layer and the glass layer 12, improving the flatness of the insulating layer and its corresponding transmission lines, thereby reducing the risk of cracking during the fabrication of the glass layer 12.

[0199] In one feasible approach, both the materials of the first insulating layer 11 and the second insulating layer 13 can comprise glass. Glass has a high resistivity, which reduces current leakage; furthermore, glass has a low loss tangent, resulting in minimal absorption and scattering of electromagnetic waves during propagation. Therefore, using glass as the material for both the first insulating layer 11 and the second insulating layer 13 in the coupler 10 reduces signal loss during transmission between the coupler 10 and other devices or modules.

[0200] In one feasible implementation, both the first insulating layer 11 and the second insulating layer 13 are made of silicon. Silicon has high chemical stability and is not easily reacted with most chemicals, enabling it to maintain stable performance even in harsh environments. Therefore, by including silicon in both the first insulating layer 11 and the second insulating layer 13, this application enables the coupler 10 to achieve long-term stable operation. Furthermore, silicon is abundant, providing sufficient raw material for the large-scale mass production of the coupler 10 and helping to ensure its continuous production and supply.

[0201] For example, when coupler 10 adopts a narrow-side coupling form, Figure 6A This is the third schematic diagram of the coupler provided in the embodiments of this application. Figure 6B The fourth schematic diagram of the coupler provided in the embodiments of this application can be referred to. Figure 6A and Figure 6B As shown.

[0202] The structure of the coupler 10 when it adopts a narrow-side coupling form will be described in detail below with reference to the relevant accompanying drawings.

[0203] Please refer to Figure 6A This application provides a coupler 10, which may include a glass layer 12, a first transmission line 14 and a second transmission line 15. The first transmission line 14 and the second transmission line 15 are both disposed on the same surface of the glass layer 12 and are spaced apart.

[0204] That is, in this coupler 10, by placing both the first transmission line 14 and the second transmission line 15 on the same surface of the glass layer 12, narrow-edge coupling of the first transmission line 14 and the second transmission line 15 can be achieved. Because the narrow-edge coupling structure is compact, the design is relatively simple, and the manufacturing cost is low, the coupler 10 can be applied to situations with simple network structures and small data transmission volumes, and can meet basic transmission requirements at a low cost.

[0205] In addition, in this coupler 10, the first transmission line 14 and the second transmission line 15 are both located on the same surface of the glass layer 12. Since glass has a high resistivity, it can reduce current leakage. Moreover, glass is a low-loss material with a low loss tangent. Therefore, this coupler 10 can also reduce the loss of the coupled signal, improve the coupling performance, and reduce insertion loss.

[0206] The specific parameters and shapes of the first transmission line 14, the second transmission line 15 and the glass layer 12 of the coupler 10 can be referenced from the relevant descriptions when the coupler 10 adopts wide-side coupling. As long as the two do not contradict each other, they can be referenced in the coupler 10.

[0207] Please refer to Figure 6B In one possible implementation, the coupler 10 may further include a third insulating layer 19 disposed on the side of the glass layer 12 near the first transmission line 14 and the second transmission line 15, and the third insulating layer 19 covers the first transmission line 14 and the second transmission line 15.

[0208] With the above-described configuration, the first transmission line 14 and the second transmission line 15 can each have corresponding layers on opposite sides (one side being a glass layer 12 and the other side being a third insulating layer 19). This results in a more symmetrical distribution of the electromagnetic field around the first transmission line 14 and the second transmission line 15. This symmetry helps reduce electromagnetic wave radiation and leakage, improving the electromagnetic compatibility performance of the transmission lines. Furthermore, having corresponding layers on opposite sides of the first transmission line 14 and the second transmission line 15 facilitates integration and connection with other circuit components, simplifying manufacturing and processing, and reducing production costs and complexity.

[0209] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples. The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A coupler, characterized in that, It includes a first insulating layer, a glass layer, and a second insulating layer that are stacked together; The coupler further includes a first transmission line and a second transmission line, wherein the first transmission line is disposed within the first insulating layer and the second transmission line is disposed within the second insulating layer; The projection of the first transmission line onto the glass layer overlaps at least partially with the projection of the second transmission line onto the glass layer; Alternatively, the coupler may include a glass layer, a first transmission line, and a second transmission line, both of which are disposed on the same surface of the glass layer and are spaced apart.

2. The coupler according to claim 1, characterized in that, The surface of the first transmission line near the glass layer is in contact with the glass layer, and the surface of the first transmission line near the glass layer is flush with the surface of the first insulating layer near the glass layer; The surface of the second transmission line near the glass layer is in contact with the glass layer, and the surface of the second transmission line near the glass layer is flush with the surface of the second insulating layer near the glass layer.

3. The coupler according to claim 1 or 2, characterized in that, Both the first insulating layer and the second insulating layer are made of glass.

4. The coupler according to claim 3, characterized in that, The thickness of both the first transmission line and the second transmission line is 4μm-20μm.

5. The coupler according to claim 1 or 2, characterized in that, Both the first insulating layer and the second insulating layer are made of silicon.

6. The coupler according to claim 1 or 2, characterized in that, The first insulating layer includes a first dielectric layer and a first adhesive layer stacked together, the first adhesive layer being located between the first dielectric layer and the glass layer, and the first transmission line being located within the first adhesive layer; The second insulating layer includes a stacked second dielectric layer and a second adhesive layer, the second adhesive layer being located between the second dielectric layer and the glass layer, and the second transmission line being located within the second adhesive layer.

7. The coupler according to claim 6, characterized in that, The materials of the first dielectric layer and the second dielectric layer include silicon; And / or, the materials of the first adhesive layer and the second adhesive layer both include semi-cured adhesive.

8. The coupler according to any one of claims 1-7, characterized in that, The coupler further includes a first matching stub and a second matching stub, wherein the first matching stub is connected to one end of the first transmission line and the second matching stub is connected to one end of the second transmission line. One end of the first transmission line connected to the first matching stub and one end of the second transmission line connected to the second matching stub are the signal input terminal of the coupler, and the other end is the isolation terminal of the coupler; The first matching stub includes a first part and a second part, the first part being connected between the second part and the first transmission line; the dimension of the first part along the first direction is smaller than the dimension of the second part along the first direction; The second matching stub includes a third part and a fourth part, the third part being connected between the fourth part and the second transmission line; the dimension of the third part along the first direction is smaller than the dimension of the fourth part along the first direction; The arrangement directions of the first insulating layer and the second insulating layer, the arrangement directions of the first portion and the second portion, and the first direction are arranged perpendicularly to each other.

9. The coupler according to any one of claims 1-8, characterized in that, The first transmission line and the second transmission line are both strip structures in the form of bends; The dimension of the first transmission line along the first direction is larger than the dimension of the first transmission line along the second direction; The dimension of the second transmission line along the first direction is larger than the dimension of the second transmission line along the second direction; The first insulating layer and the second insulating layer are arranged in a perpendicular arrangement, with the first direction and the second direction being perpendicular to each other.

10. The coupler according to claim 1, characterized in that, The coupler further includes a third insulating layer disposed on the side of the glass layer near the first transmission line and the second transmission line, and the third insulating layer covers the first transmission line and the second transmission line.

11. A transceiver module, characterized in that, include: Circuit board; The coupler as described in any one of claims 1-10, wherein the coupler and the circuit board are electrically connected.

12. A communication device, characterized in that, include: processor; The transceiver module as described in claim 11, wherein the transceiver module and the processor are electrically connected.

13. A method for fabricating a coupler, characterized in that, include: A first transmission line is formed within the first insulating layer; Bond the first insulating layer and the glass layer together; The side of the glass layer facing away from the first insulating layer is thinned. A second transmission line is formed within the second insulating layer; The second insulating layer and the glass layer are bonded such that the second insulating layer is located on the side of the glass layer opposite to the first insulating layer.

14. The method for fabricating the coupler according to claim 13, characterized in that, A first transmission line is formed within a first insulating layer, including: A first groove is formed on one side of the first insulating layer; A metallic material is deposited on the side of the first insulating layer that has the first groove; Remove the metal material outside the first groove to obtain a first transmission line located inside the first groove; A second transmission line is formed within the second insulating layer, including: A second groove is formed on one side of the second insulating layer; A metallic material is deposited on the side of the second insulating layer that has the second groove; Remove the metal material outside the second groove to obtain a second transmission line located inside the second groove.

15. The method for fabricating the coupler according to claim 13 or 14, characterized in that, Both the first insulating layer and the second insulating layer are made of glass.

16. The method for fabricating the coupler according to claim 13 or 14, characterized in that, Both the first insulating layer and the second insulating layer are made of silicon.

17. The method for fabricating the coupler according to claim 13 or 14, characterized in that, A first transmission line is formed within a first insulating layer, including: A first transmission line is formed on one side of the first dielectric layer; A first adhesive layer is formed by spin-coating an adhesive material onto one side of the first dielectric layer having the first transmission line, and the first adhesive layer and the first dielectric layer form the first insulating layer. A second transmission line is formed within the second insulating layer, including: A second transmission line is formed on one side of the second dielectric layer; A spin-coating material is applied to one side of the second dielectric layer having the second transmission line to form a second adhesive layer, and the second adhesive layer and the second dielectric layer form the second insulating layer.

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