Opto-electronic negative ion module and applications thereof

Abstract

The application discloses a photoelectric negative ion module, which utilizes the photoelectric effect of a photodiode, utilizes infrared excitation of multiple PN nodes, and releases required high voltage through linear superposition to realize a high-voltage output photoelectric inverter module. The module body is composed of linear superposition of a plurality of working units, and each working unit is composed of a p-type semiconductor and an n-type semiconductor distributed on both sides of a pn junction.

Description

Technical Field

[0001] This invention relates to the field of negative ion technology, and in particular to a photoelectric negative ion module and its application. Background Technology

[0002] Piezoelectric ceramic transformers are commonly used in negative ion generators. However, in certain scenarios, such piezoelectric ceramic transformers are severely inadequate and cannot effectively meet the needs of instruments that are extremely sensitive to electromagnetic fields (such as radio telescopes and nuclear magnetic resonance equipment) or equipment with strict EMC requirements. Summary of the Invention

[0003] The purpose of this invention is to provide a photoelectric negative ion module and its application.

[0004] To address the aforementioned technical problems, embodiments of the present invention provide a photoelectric negative ion module, which utilizes the photoelectric effect of photodiodes, uses infrared to excite multiple PN nodes, and releases the required high voltage through linear superposition, thereby realizing a high-voltage output photoelectric inverter module.

[0005] The photoelectric negative ion module provided by the present invention includes a module body, which is composed of a number of working units linearly stacked. Each working unit is composed of p-type semiconductors and n-type semiconductors distributed on both sides of the pn junction.

[0006] As mentioned above, the photoelectric negative ion module is used in negative ion generating devices.

[0007] Compared with existing technologies, the entire conversion process of this invention does not involve any changes in electric or magnetic fields, making it particularly suitable for the following scenarios: 1. Instruments that are extremely sensitive to electromagnetic fields, such as radio telescopes and nuclear magnetic resonance equipment; 2. Equipment with strict EMC requirements; 3. High-voltage power supply reference sources, capable of generating high-precision, low-ripple high-voltage power supply signals to provide reference signals for precision instruments; 4. Scenarios requiring vibration resistance, such as environments that need to withstand severe vibrations and harsh conditions, where the optoelectronic module can withstand an ultra-wide operating temperature range of -40 to 125 degrees Celsius, such as satellite launches; 5. Applications requiring ultra-high isolation voltage, and communication applications with particularly high electrical safety requirements, such as isolated communication. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of the working unit in the photoelectric negative ion module of Example 1.

[0009] Figure 2 This is a performance comparison table between the present invention and the prior art in Example 1.

[0010] Figure 3 This is a high-voltage waveform diagram of a piezoelectric ceramic negative ion module.

[0011] Figure 4 This is a high-voltage waveform diagram of the negative ion module of the coil transformer.

[0012] Figure 5 This is a high-voltage waveform diagram of the photoelectric negative ion module.

[0013] Figure 6 This is a test diagram of the electromagnetic radiation of a piezoelectric ceramic negative ion module.

[0014] Figure 7 This is a test diagram of the electromagnetic radiation of the negative ion module of the coil transformer.

[0015] Figure 8 This is a test diagram of the electromagnetic radiation of the photoelectric negative ion module.

[0016] Figure 9 This is a schematic diagram of the photoelectric negative ion module applied to the negative ion generating device in the second embodiment.

[0017] Figure 10 This is a schematic diagram of a single boost circuit. Detailed Implementation

[0018] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below with reference to specific embodiments.

[0019] Example 1: A photoelectric negative ion module that utilizes the photoelectric effect of photodiodes, uses infrared to excite multiple PN nodes, and releases the required high voltage through linear superposition, thereby realizing a high-voltage output photoelectric inverter module.

[0020] See Figure 1 The photoelectric negative ion module provided by the present invention includes a module body, which is composed of a number of working units linearly stacked. Each working unit is composed of p-type semiconductors and n-type semiconductors distributed on both sides of the pn junction.

[0021] The aforementioned photoelectric negative ion module is applied in a negative ion generator to effectively replace the piezoelectric ceramic negative ion module.

[0022] exist Figure 2 As can be seen from the comparison of relevant parameters (performance) between this invention and traditional technologies such as electromechanical inverted ultrasonic transformer inverters and electromagnetic coil transformer inverters, the photoelectric inverter provided by this invention has excellent characteristics such as no electromagnetic interference and no electric field interference, and has unique advantages in the following scenarios:

[0023] First, instruments that are extremely sensitive to electromagnetic fields, such as radio telescopes and nuclear magnetic resonance imaging (NMR).

[0024] Second, equipment with strict EMC requirements.

[0025] Third, a high-voltage power supply reference source. This can generate high-precision, low-ripple high-voltage power supply signals, providing reference signals for precision instruments.

[0026] Fourth, in scenarios where vibration is a concern, such as harsh environments requiring the ability to withstand severe vibrations, the optoelectronic module can withstand an ultra-wide operating temperature range of -40 to 125 degrees Celsius, such as in satellite launches.

[0027] Fifth, applications requiring ultra-high isolation voltage, such as communication applications with particularly high electrical safety requirements. For example, isolated communication.

[0028] This photoelectric negative ion module, when applied to negative ion generators, can effectively replace piezoelectric ceramic negative ion modules and has overwhelming advantages in electrical performance such as high voltage ripple and electromagnetic radiation.

[0029] from Figure 3 It can be seen that the ripple voltage of the piezoelectric ceramic negative ion module is 66.4V. Figure 4 The ripple of the main coil negative ion module is 59.2V, while the ripple of the photoelectric negative ion module provided by this invention is only 0.9V (see...). Figure 5 ).

[0030] exist Figure 6 It can be seen that piezoelectric ceramics have two significant radiation frequencies: one is the resonant frequency of the piezoelectric ceramic at 150 kHz-160 kHz, and the other is... Figure 7 It can be observed that the negative ion module of the coil transformer exhibits very severe low-frequency electric field radiation near 8kHz, while... Figure 8 It can be observed that the photoelectric negative ion module does not emit any electromagnetic radiation at any frequency or location.

[0031] Example 2: This example provides a photoelectric negative ion module applied to a negative ion generator. See [link to example]. Figure 9 The figure shows the schematic diagram of the photoelectric negative ion module installed in the negative ion generator, while the schematic diagram of a single boost circuit can be found in [reference needed]. Figure 10 The photovoltaic coupler U1 of the single boost circuit adopts TLP3910, and is matched with the negative ion generator through N interconnected photovoltaic negative ion modules (e.g., N=120).

[0032] Those skilled in the art will understand that the above embodiments are specific examples of implementing the present invention, and in practical applications, various changes in form and detail may be made without departing from the spirit and scope of the present invention.

Claims

1. A photoelectron negative ion module characterized by, It utilizes the photoelectric effect of photodiode, utilizes infrared excitation multiple PN nodes, and releases the required high voltage through linear superposition to realize high-voltage output photoelectric inversion module.

2. The optoelectronic negative ion module according to claim 1, comprising a module body, characterized in that The module body is composed of several working units in linear superposition, and each working unit is composed of p-type semiconductor and n-type semiconductor distributed on both sides of the pn junction.

3. The application of the photoelectric negative ion module according to any one of claims 1-2 in a negative ion generating device.

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