High power transceiver assembly

Abstract

This application relates to a high-power transceiver component, comprising: an RF transmit link, an RF receive link, an amplitude-phase multifunction chip, and a non-standard circulator; the transmit link connects to the amplitude-phase multifunction chip and the non-standard circulator, and is used to amplify a first signal received from the amplitude-phase multifunction chip at high power before transmission; the interconnection interface impedance between the output port of the RF transmit link and the first port of the non-standard circulator is a first impedance lower than the standard impedance; the receive link connects to the amplitude-phase multifunction chip and the non-standard circulator, and is used to amplify a second signal received from the non-standard circulator at low noise before transmission; the interconnection interface impedance between the input port of the receive link and the second port of the non-standard circulator is a second impedance matching the optimal noise impedance of the non-standard low-noise amplifier in the receive link, and the second impedance is lower than the standard impedance. This application solves the problem of narrow operating bandwidth in high-power microwave transceiver components in related technologies.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and in particular to high-power transceiver components. Background Technology

[0002] High-power microwaves refer to electromagnetic pulses with an average power in the kilowatt range, a peak pulse power in the megawatt range or higher, and a frequency range of 0.5-300 GHz. Radar transceiver components are the "retinal cells" of a radar system; their performance directly determines the radar's operational specifications, size, weight, and cost. High-power microwave transceiver components integrate high-power microwave technology with the core functions of radar transceiver components, making them a key component in radar systems. Developing high-performance high-power microwave transceiver components has significant engineering application value.

[0003] In existing technologies, high-power microwave transceiver components are designed based on standard impedance systems, which presents significant performance bottlenecks and results in narrow operating bandwidths.

[0004] Currently, no effective solution has been proposed to address the issue of narrow operating bandwidth in high-power microwave transceiver components in related technologies. Summary of the Invention

[0005] This application provides a high-power transceiver component to at least solve the problem of narrow operating bandwidth in high-power microwave transceiver components in related technologies.

[0006] In a first aspect, embodiments of this application provide a high-power transceiver component, the component comprising: a radio frequency transmit link, a radio frequency receive link, an amplitude-phase multifunction chip, and a non-standard circulator;

[0007] The radio frequency transmission link is connected to the amplitude-phase multifunction chip and the non-standard circulator, and is used to amplify the first signal received from the amplitude-phase multifunction chip with high power and then send it to the non-standard circulator; the interconnection interface impedance between the output port of the radio frequency transmission link and the first port of the non-standard circulator is a first impedance; the first impedance is lower than a preset standard impedance.

[0008] The radio frequency receiving link is connected to the amplitude-phase multifunction chip and the non-standard circulator, and is used to amplify the second signal received from the non-standard circulator with low noise before sending it to the amplitude-phase multifunction chip; the interconnection interface impedance between the input port of the radio frequency receiving link and the second port of the non-standard circulator is a second impedance; the second impedance matches the optimal noise impedance of the non-standard low noise amplifier in the radio frequency receiving link, and the second impedance is lower than the standard impedance.

[0009] In some embodiments, the radio frequency transmit link includes a driver amplifier, an isolator, and a non-standard impedance power amplifier;

[0010] The drive amplifier is connected to the amplitude-phase multifunction chip and to the isolator;

[0011] The non-standard impedance power amplifier is connected to the isolator and to the first port of the non-standard circulator; the interconnection interface impedance between the output port of the non-standard impedance power amplifier and the first port of the non-standard circulator is the first impedance.

[0012] In some embodiments, the non-standard impedance power amplifier includes a first impedance matching circuit; the first impedance matching circuit includes a first inductor, a second inductor, a first capacitor, and a second capacitor;

[0013] The first inductor is connected to the die output terminal of the non-standard impedance power amplifier, and is also connected to one end of the second inductor and the first capacitor; the other end of the first capacitor is grounded.

[0014] The second inductor is also connected to the first port of the non-standard circulator and one end of the second capacitor; the other end of the second capacitor is grounded.

[0015] The first impedance matching circuit is used to match the die output impedance of the non-standard impedance power amplifier to the first impedance.

[0016] In some embodiments, the high-power transceiver assembly further includes a first test fixture;

[0017] One end of the first test fixture is connected to the input and output terminals of the non-standard impedance power amplifier, and the other end of the first test fixture is connected to the test equipment. The first test fixture is used to convert the inherent impedance of the test equipment and the first impedance so that the test equipment can perform performance verification on the non-standard impedance power amplifier.

[0018] In some embodiments, the high-power transceiver assembly further includes an antenna;

[0019] The antenna is connected to the third port of the non-standard circulator; the interconnection interface impedance between the third port of the non-standard circulator and the antenna port is a third impedance; the third impedance is higher than the standard impedance.

[0020] In some embodiments, the antenna contains multiple quarter-wavelength impedance transformation lines;

[0021] The multi-section quarter-wavelength impedance transformation line is used to transform the spatial characteristic impedance of the antenna to the third impedance.

[0022] In some embodiments, the high-power transceiver assembly further includes a second test fixture;

[0023] The second test fixture is connected to the third port of the non-standard circulator and to the test equipment, and is used to convert the inherent impedance of the test equipment and the third impedance so that the test equipment can perform performance verification on the third port of the non-standard circulator.

[0024] In some embodiments, the radio frequency receiving link includes a non-standard low-noise amplifier;

[0025] The non-standard low-noise amplifier is connected to the amplitude-phase multifunction chip and to the second port of the non-standard circulator; the interconnection interface impedance between the input port of the non-standard low-noise amplifier and the second port of the non-standard circulator is the second impedance.

[0026] In some embodiments, the non-standard low-noise amplifier includes a second impedance matching circuit;

[0027] The second impedance matching circuit is used to match the die input impedance of the non-standard low-noise amplifier to the second impedance.

[0028] In some embodiments, the non-standard circulator includes a first port, a second port, and a third port; the impedance of the first port is the first impedance; the impedance of the second port is the second impedance; and the impedance of the third port is the third impedance.

[0029] Compared to related technologies, the high-power transceiver component provided in this application includes: an RF transmit link, an RF receive link, an amplitude-phase multifunction chip, and a non-standard circulator; the RF transmit link is connected to both the amplitude-phase multifunction chip and the non-standard circulator, and is used to amplify a first signal received from the amplitude-phase multifunction chip at high power before transmitting it to the non-standard circulator; the interconnection interface impedance between the output port of the RF transmit link and the first port of the non-standard circulator is a first impedance; the first impedance is lower than a preset standard impedance; the RF receive link is connected to both the amplitude-phase multifunction chip and the non-standard circulator, and is used to amplify a second signal received from the non-standard circulator at low noise before transmitting it to the amplitude-phase multifunction chip; the interconnection interface impedance between the input port of the RF receive link and the second port of the non-standard circulator is a second impedance; the second impedance matches the optimal noise impedance of the non-standard low-noise amplifier in the RF receive link, and the second impedance is lower than the standard impedance. This solves the problem of narrow operating bandwidth in high-power microwave transceiver components in related technologies.

[0030] Details of one or more embodiments of this application are set forth in the following drawings and description to make other features, objects and advantages of this application more readily apparent. Attached Figure Description

[0031] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments of this application and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0032] Figure 1 This is a structural block diagram of a first high-power transceiver component according to an embodiment of this application;

[0033] Figure 2 The simulation results are of the matching circuit for matching the output port impedance of the X-band RF transmission link to 50 ohms according to the embodiments of this application.

[0034] Figure 3 The simulation results are of the matching circuit for matching the output port impedance of the X-band RF transmission link to 10 ohms according to the embodiments of this application.

[0035] Figure 4 This is a structural block diagram of a second high-power transceiver component according to an embodiment of this application;

[0036] Figure 5 This is a schematic diagram of a first impedance matching circuit according to an embodiment of this application;

[0037] Figure 6 This is a structural simulation diagram of the first test fixture according to an embodiment of this application;

[0038] Figure 7 This is a simulation result diagram of the port impedance of the first test fixture according to an embodiment of this application;

[0039] Figure 8 This is a simulation result diagram of the performance of the first test fixture according to an embodiment of this application;

[0040] Figure 9 This is a structural block diagram of a third high-power transceiver component according to an embodiment of this application;

[0041] Figure 10 This is a structural simulation diagram of the second test fixture according to an embodiment of this application;

[0042] Figure 11 This is a simulation result diagram of the port impedance of the second test fixture according to an embodiment of this application;

[0043] Figure 12 This is a simulation result diagram of the performance of the second test fixture according to an embodiment of this application;

[0044] Figure 13 This is a structural block diagram of a fourth high-power transceiver component according to an embodiment of this application;

[0045] Figure 14 It is the noise figure circle of the X-band low-noise amplifier according to the embodiments of this application;

[0046] Figure 15 This is a schematic diagram of the X-band non-standard circulator port design according to an embodiment of this application. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of this application clearer, the application is described and illustrated below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the application. All other embodiments obtained by those skilled in the art based on the embodiments provided in this application without inventive effort are within the scope of protection of this application. Furthermore, it is understood that although the efforts made in such a development process may be complex and lengthy, for those skilled in the art related to the content disclosed in this application, modifications to design, manufacturing, or production based on the technical content disclosed in this application are merely conventional technical means and should not be construed as insufficient disclosure of the content of this application.

[0048] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment that is mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application may be combined with other embodiments without conflict.

[0049] Unless otherwise defined, the technical or scientific terms used in this application shall have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms “a,” “an,” “an,” “the,” and similar words used in this application do not indicate quantity limitation and may indicate singular or plural. The terms “comprising,” “including,” “having,” and any variations thereof used in this application are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or device that includes a series of steps or modules (units) is not limited to the listed steps or units, but may also include steps or units not listed, or may include other steps or units inherent to these processes, methods, products, or devices. The terms “connected,” “linked,” “coupled,” and similar words used in this application are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. “Multiple” used in this application means two or more. “And / or” describes the relationship between related objects, indicating that three relationships may exist; for example, “A and / or B” can represent: A alone, A and B simultaneously, and B alone. The terms “first,” “second,” “third,” etc., used in this application are merely to distinguish similar objects and do not represent a specific ordering of the objects.

[0050] High-power microwaves refer to electromagnetic pulses with an average power in the kilowatt range, a peak pulse power in the megawatt range or higher, and a frequency range of 0.5-300 GHz. Radar transceiver components are the "retinal cells" of a radar system; their performance directly determines the radar's operational specifications, size, weight, and cost. High-power microwave transceiver components integrate high-power microwave technology with the core functions of radar transceiver components, making them a key component in radar systems. Developing high-performance high-power microwave transceiver components has significant engineering application value.

[0051] Traditional X-band high-power microwave components have a narrow operating bandwidth, primarily due to the relatively narrow operating bandwidth of the final-stage gallium nitride (GaN) power amplifier, typically less than 1 GHz. This is because high-power GaN bare dies have low output impedance, resulting in a high inter-stage impedance transformation ratio and complex matching network when matched to 50 ohms, thus limiting the operating bandwidth of high-power GaN power amplifiers. From the perspective of insertion loss and bandwidth, for high-power amplifiers, a lower load impedance is desirable, while for low-noise amplifiers, a higher input impedance is preferred, and for antennas, an input / output impedance close to 377 ohms is ideal.

[0052] To address the aforementioned issues, this embodiment provides a high-power transceiver component. Figure 1 This is a structural block diagram of a first high-power transceiver component according to an embodiment of this application, as shown below. Figure 1As shown, the component includes: an RF transmit link 11, an RF receive link 12, an amplitude-phase multifunction chip 13, and a non-standard circulator 14;

[0053] The radio frequency transmission link 11 is connected to the amplitude-phase multifunction chip 13 and the non-standard circulator 14. It is used to amplify the first signal received from the amplitude-phase multifunction chip 13 with high power and then send it to the non-standard circulator 14. The interconnection interface impedance between the output port of the radio frequency transmission link 11 and the first port of the non-standard circulator 14 is a first impedance. The first impedance is lower than the preset standard impedance.

[0054] The RF receiving link 12 is connected to the amplitude-phase multifunction chip 13 and the non-standard circulator 14. It is used to amplify the second signal received from the non-standard circulator 14 with low noise and then send it to the amplitude-phase multifunction chip 13. The interconnection interface impedance between the input port of the RF receiving link 12 and the second port of the non-standard circulator 14 is the second impedance. The second impedance matches the optimal noise impedance of the non-standard low-noise amplifier in the RF receiving link 12 and is lower than the standard impedance.

[0055] Among them, the amplitude and phase multi-function chip 13 is responsible for the generation, processing and interaction of signals, and is the signal hub of the radio frequency transmission link and the radio frequency reception link; the non-standard circulator 14 is a common core device of the transmission and reception link, realizing the isolation and directional transmission of the transmitted signal and the received signal, and becoming a key node connecting the transmission link, the reception link and the external antenna.

[0056] The signal input terminal of the RF transmit link 11 is connected to the amplitude-phase multifunction chip 13, while the signal output terminal is directionally connected to the first port of the non-standard circulator 14. Its core function is to perform high-power amplification of the first electrical signal received from the amplitude-phase multifunction chip 13 in stages, converting the low-power baseband / IF signal into a high-power RF signal that meets the transmission requirements, and accurately transmitting the amplified signal to the non-standard circulator 14. To overcome the performance bottleneck of traditional standard impedance design, the interconnection interface between the output port of the RF transmit link 11 and the first port of the non-standard circulator 14 is designed as the first impedance. The value of this first impedance is lower than the 50-ohm standard impedance preset in the RF field, adapting to the low-impedance operating characteristics of the final stage power amplifier of the transmit link.

[0057] The signal input terminal of the RF receiving link 12 is connected to the second port of the non-standard circulator 14, and the signal output terminal is connected back to the amplitude-phase multifunction chip 13. This primarily enables low-noise amplification of the received external signal: the non-standard circulator 14 transmits the received second RF signal directionally to the RF receiving link 12, where the low-noise amplification device amplifies the weak received signal while suppressing noise interference to the maximum extent. The processed signal is then transmitted to the amplitude-phase multifunction chip 13 for subsequent demodulation and analysis. The interconnection interface between the input port of the RF receiving link 12 and the second port of the non-standard circulator 14 is designed as a second impedance. This second impedance is not arbitrarily chosen but is matched to the optimal noise impedance of the non-standard low-noise amplifier inside the RF receiving link 12. Furthermore, this second impedance is also lower than the standard impedance of 50 ohms, thus meeting the noise optimization requirements of the low-noise amplifier.

[0058] Figure 2 This is a simulation result of the matching circuit for the output port impedance of the X-band RF transmit link, according to an embodiment of this application, to be matched to 50 ohms. The horizontal axis represents frequency (in GHz), and the vertical axis represents reflection coefficient / transmission coefficient (in dB). The red curve represents the reflection coefficient, and the black curve represents the transmission coefficient. This simulation result visually presents the RF performance of the power amplifier under the traditional standard impedance matching mode: in the frequency range of 9.3 GHz-11.7 GHz, its transmission coefficient S21 ≥ -0.41 dB and reflection coefficient S11 ≤ -10 dB. This means that under the traditional 50-ohm matching method, the signal experiences a certain insertion loss during transmission, and the operating bandwidth only covers the 9.3 GHz-11.7 GHz range, limiting the bandwidth. Furthermore, to achieve matching from low die impedance to the 50-ohm standard impedance, the matching circuit in this mode requires additional inductors and capacitors, introducing a multi-stage matching circuit design, resulting in a complex circuit structure. This not only increases the design and manufacturing cost of the components but also increases the probability of device failure.

[0059] Figure 3 This is a simulation result of the matching circuit for the output port impedance of the X-band RF transmit link matched to 10 ohms according to an embodiment of this application. The horizontal axis represents frequency (in GHz), and the vertical axis represents reflection coefficient / transmission coefficient (in dB). The red curve represents the reflection coefficient S11, and the black curve represents the transmission coefficient S21. This is a performance verification of a low-impedance matching scheme designed to address the shortcomings of traditional matching methods. It achieves excellent performance of S21 ≥ -0.21 dB and S11 ≤ -10 dB in the frequency range of 8.9 GHz to 11.7 GHz. Compared to... Figure 2The 50-ohm matching results show that the transmission coefficient S21 of the 10-ohm non-standard impedance matching is closer to 0dB, significantly reducing insertion loss and greatly improving signal transmission efficiency. Simultaneously, the operating bandwidth is extended from 9.3GHz-11.7GHz to 8.9GHz-11.7GHz, effectively extending the low-frequency operating range and achieving a significant expansion of the power amplifier's operating bandwidth. Furthermore, when matching to a low impedance of 10 ohms, complex matching components are unnecessary, directly simplifying the overall structure of the matching circuit and eliminating the need for the multi-stage circuit design required for traditional high-conversion-ratio matching.

[0060] pass Figure 2 and Figure 3 The simulation results clearly demonstrate the significant technical advantages of using a non-standard low-impedance matching design. Firstly, it significantly expands bandwidth by matching the power amplifier die to a smaller 10-ohm non-standard impedance, breaking the bandwidth limitation of the traditional 50-ohm standard impedance and effectively broadening the operating frequency range of the power amplifier, meeting the core requirement of X-band high-power transceivers for wide-band operation. Secondly, it improves signal transmission efficiency. Low impedance matching significantly reduces insertion loss during impedance transformation, allowing more signals to be transmitted effectively and improving the power amplifier's power output efficiency. Thirdly, it simplifies the matching circuit design. Low impedance matching eliminates the need for complex multi-stage matching components, simplifying the circuit structure. This not only reduces the design, manufacturing, and debugging costs of the components but also reduces the failure rate caused by circuit components, improving the stability and reliability of the power amplifier and the entire transceiver assembly. Fourthly, it leverages the inherent characteristics of the adapter device. This design aligns with the inherent operating characteristics of gallium nitride power amplifier dies—high current, low impedance, and high power—avoiding the performance degradation caused by traditional high impedance transformation ratios and fully utilizing the device's optimal performance.

[0061] The high-power transceiver components in the above embodiments effectively solve the core problem of narrow operating bandwidth in traditional high-power microwave transceiver components designed based on a 50-ohm standard impedance. On the one hand, the RF transmitting link 11 adopts a first impedance design lower than the standard impedance, matching the inherent characteristics of the low output impedance of the high-power amplifier die, significantly reducing the impedance transformation ratio, simplifying the impedance matching network design of the power amplifier, and avoiding the problems of complex matching networks and large signal insertion loss caused by high transformation ratios. This effectively broadens the operating bandwidth of the transmitting link and improves signal transmission efficiency. On the other hand, the RF receiving link 12 designs the interconnect interface impedance as a second impedance that matches the optimal noise impedance of the low-noise amplifier. Without the need for an additional standard impedance matching network, it directly achieves the minimum noise figure operating state of the low-noise amplifier. While ensuring the amplification gain of the received signal, it significantly optimizes the noise performance of the receiving link and improves the component's ability to receive weak signals. Meanwhile, the differentiated port impedance design of the non-standard circulator allows the impedance requirements of the transmit and receive link ports to be met simultaneously, realizing the integrated impedance matching design of the entire transceiver component. This not only reduces the overall size and design complexity of the component, but also further improves the overall operating bandwidth and RF performance of the component, enabling high-power transceiver components to have better working performance and engineering application value in RF application scenarios such as radar.

[0062] In some embodiments, a second high-power transceiver component is provided. Figure 4 This is a structural block diagram of a second type of high-power transceiver component according to an embodiment of this application, such as... Figure 4 As shown, the radio frequency transmission link 11 includes a driver amplifier 111, an isolator 112, and a non-standard impedance power amplifier 113;

[0063] The driver amplifier 111 is connected to the amplitude-phase multifunction chip 13 and to the isolator 112;

[0064] A non-standard impedance power amplifier 113 is connected to an isolator 112 and to the first port of a non-standard circulator 14; the interconnection interface impedance between the output port of the non-standard impedance power amplifier 113 and the first port of the non-standard circulator 14 is a first impedance.

[0065] The radio frequency transmission link 11 includes three core functional units: a driver amplifier 111, an isolator 112, and a non-standard impedance power amplifier 113. These units are connected in a cascaded manner to form a standardized and detachable transmission signal processing link, enabling precise division of labor between the signal amplification, isolation, and high-power output functions of the radio frequency transmission link.

[0066] The driver amplifier 111 serves as the first-end amplification unit of the RF transmission link 11. Its signal input terminal is directionally connected to the amplitude-phase multifunction chip 13, receiving the initial RF signal generated and output by the amplitude-phase multifunction chip 13. The core of the driver amplifier 111 is to perform pre-amplification processing on the low-power initial signal, providing the basic signal gain for subsequent high-power amplification. The signal output terminal of the driver amplifier 111 is connected to the input terminal of the isolator 112, transmitting the pre-amplified signal to the isolator 112.

[0067] As a signal isolation unit in the transmission link, isolator 112 can effectively suppress the reverse reflection signal generated by the subsequent power amplification unit while realizing the forward transmission of the signal, so as to avoid the reflected signal from being transmitted back to the driver amplifier 111 and the amplitude-phase multi-function chip 13 and causing damage to the devices, thus ensuring the working stability of the front-end devices in the transmission link.

[0068] The non-standard impedance power amplifier 113 is the final high-power amplification unit of the RF transmission link 11. Its signal input is connected to the output of the isolator 112, receiving the pre-amplified signal after isolation and amplifying it to a high power level that meets the actual transmission requirements. The signal output of the non-standard impedance power amplifier 113 is directly interconnected with the first port of the non-standard circulator 14. The interconnection interface impedance between the output port of the non-standard impedance power amplifier 113 and the first port of the non-standard circulator 14 is set to a first impedance (e.g., 10 ohms). This impedance value is a non-standard impedance adapted to the operating characteristics of the power amplifier, breaking the design limitation of the traditional 50-ohm standard impedance. The final stage matching of a high-power microwave amplifier inherently has the characteristics of large current, low impedance, and high power. Combined with the relationship formula between bandwidth and impedance... Setting the load impedance of the final stage power amplifier to a sufficiently small value can achieve a larger bandwidth. This is the core design basis for setting the interconnect interface impedance to a low-value first impedance in this design. In the above formula, BW is the relative bandwidth, f0 is the center frequency, and R... opt For the optimal operating impedance of the power amplifier transistor chip, R L This is the load impedance.

[0069] In the above embodiment, on the one hand, the RF transmission link 11 is divided into three independent units: a driver amplifier 111, an isolator 112, and a non-standard impedance power amplifier 113. This achieves precise matching and division of labor among the functions. The addition of the isolator 112 effectively blocks the interference of the reverse reflected signal, significantly reducing the mutual interference problem of components within the transmission link and improving the stability and reliability of the entire transmission link. At the same time, the modular structure facilitates subsequent component replacement, debugging, and maintenance, reducing maintenance costs in engineering applications. On the other hand, the interconnection interface between the non-standard impedance power amplifier 113 and the non-standard circulator 14 is designed as the first impedance, which adapts to the inherent characteristics of the low output impedance of the non-standard impedance power amplifier die. There is no need to design an additional transformation network from low impedance to 50 ohms standard impedance, directly reducing the insertion loss generated during impedance transformation and improving the signal transmission efficiency of the transmission link. At the same time, the low impedance matching design significantly reduces the impedance transformation ratio, simplifies the output matching circuit design of the non-standard impedance power amplifier 113, effectively widens the operating bandwidth of the power amplifier and even the entire RF transmission link, and solves the technical bottleneck of narrow transmission link bandwidth under traditional standard impedance design.

[0070] In some embodiments, a first impedance matching circuit for a non-standard impedance power amplifier is also provided. Figure 5 This is a schematic diagram of a first impedance matching circuit according to an embodiment of this application; the first impedance matching circuit includes a first inductor, a second inductor, a first capacitor, and a second capacitor;

[0071] The first inductor is connected to the die output terminal of the non-standard impedance power amplifier, and is also connected to one end of the second inductor and the first capacitor; the other end of the first capacitor is grounded.

[0072] The second inductor is also connected to the first port of the non-standard circulator and one end of the second capacitor; the other end of the second capacitor is grounded.

[0073] The first impedance matching circuit is used to match the die output impedance of the non-standard impedance power amplifier to the first impedance.

[0074] The aforementioned first impedance matching circuit is specifically designed for use with non-standard impedance power amplifiers. This circuit is a core component of the non-standard impedance power amplifier and primarily considers the low impedance characteristics of the amplifier die and the ease of engineering implementation. Its specific structure consists of four core passive components: a first inductor, a second inductor, a first capacitor, and a second capacitor. These components are precisely connected in a topological manner to form a complete impedance transformation path. The first inductor, as the core input-side component, has one end directly connected to the output terminal of the non-standard impedance power amplifier die, receiving the RF signal output from the die. The other end is simultaneously connected to the input terminal of the second inductor and one end of the first capacitor via a common node. The other end of the first capacitor is directly grounded, forming an RF grounding path, which can effectively filter out spurious components in the die's output signal. The second inductor, serving as an intermediate transmission and impedance transformation device in the circuit, has its input terminal connected to the first inductor at a common node, while its output terminal is connected to both the first port of the non-standard circulator and one end of the second capacitor, enabling directional signal transmission to the non-standard circulator. The other end of the second capacitor is also directly grounded, forming a grounding filter structure in conjunction with the first capacitor, further optimizing the impedance characteristics of signal transmission. This first impedance matching circuit, as a dedicated matching module for the non-standard impedance power amplifier, has the core function of precisely transforming the low output impedance of the gallium nitride die itself to a preset first impedance value, achieving seamless impedance matching between the die and the first port of the non-standard circulator, thus creating an impedance-matched interconnect between the output of the non-standard impedance power amplifier and the input of the non-standard circulator.

[0075] In the above embodiments, the first impedance matching circuit, with its simple topology and precise device connection design, achieves efficient transformation from die impedance to the first impedance. Firstly, this circuit completes impedance matching using only four passive components. Compared to the complex multi-stage circuits required for traditional 50-ohm standard impedance matching, this significantly simplifies the matching network structure, reduces the number of components in the circuit, and lowers the difficulty and cost of circuit design, fabrication, and debugging. Secondly, the design of two inductors in series and two capacitors grounded in the circuit can effectively filter the RF signal while achieving impedance transformation, suppressing spurious interference during signal transmission, improving signal transmission purity, and ensuring the quality of the signal after power amplification. Thirdly, this matching circuit can accurately match the die impedance to the first impedance, ensuring that the output impedance of the non-standard impedance power amplifier perfectly matches the input impedance of the first port of the non-standard circulator. This eliminates signal reflection problems caused by impedance mismatch, significantly reduces insertion loss at the interconnect interface, and improves the overall signal transmission efficiency of the RF transmission link. Fourthly, the design of this matching circuit is fully adapted to the operating characteristics of gallium nitride die, which has high current, low impedance, and high power. It enables the non-standard impedance power amplifier to always operate at the optimal load impedance state, giving full play to the power amplification performance of the device. At the same time, with the low impedance matching design, it effectively broadens the operating bandwidth of the power amplifier and breaks through the technical bottleneck of narrow bandwidth under traditional standard impedance matching.

[0076] In some embodiments, the high-power transceiver component further includes a first test fixture;

[0077] One end of the first test fixture is connected to the input and output terminals of the non-standard impedance power amplifier, respectively, and the other end of the first test fixture is connected to the test equipment. The first test fixture is used to convert the inherent impedance of the test equipment and the first impedance so that the test equipment can perform performance verification on the non-standard impedance power amplifier.

[0078] Specifically, to accommodate the non-standard impedance testing requirements of non-standard impedance power amplifiers, the high-power transceiver module is also equipped with a first test fixture (see [link]). Figure 6 This fixture, serving as a core component for adapting and converting non-standard impedance to standard test equipment, employs a dual-port docking design to achieve precise connection with the device under test and the test equipment. The non-standard impedance end of the first test fixture is... Figure 6 The two wide-side ports are respectively connected to the input and output terminals of the non-standard impedance power amplifier, forming a complete test signal path, which can accurately acquire the RF signal parameters during the operation of the non-standard impedance power amplifier; its standard impedance terminal is... Figure 6 The two narrow-sided ports are connected to external standard test equipment, adapting to the interface connection requirements of conventional test instruments, enabling standard test equipment to directly test the performance of non-standard impedance power amplifiers.

[0079] The core design of the first test fixture is an integrated impedance transformation network. This network is customized to address the differences in characteristics between the first impedance and the inherent standard impedance of the test equipment, enabling efficient and low-loss conversion between the two impedances. During actual testing, the fixture can accurately convert the first impedance RF signal output by the non-standard impedance power amplifier into a standard impedance signal recognizable by the test equipment. Simultaneously, it can convert the standard impedance excitation signal emitted by the test equipment into a first impedance signal adapted to the non-standard impedance power amplifier, achieving seamless transmission of test signals between different impedance systems and providing stable and accurate test conditions for the performance verification of non-standard impedance power amplifiers.

[0080] Figure 7 This is a simulation result diagram of the port impedance of the first test fixture according to the embodiment of this application. The horizontal axis is the frequency (in GHz), covering the core frequency band of the X-band; the vertical axis is the real part of the impedance (in Ω). The two curves in the figure correspond to the two ports of the fixture, where the black curve is the real part of the 10-ohm port impedance when the fixture is connected to the non-standard impedance power amplifier, and the red curve is the real part of the 50-ohm port impedance when the fixture is connected to the standard 50-ohm test equipment. The trend of the curves intuitively reflects the stability of the real parts of the two port impedances at different frequencies, verifying that the fixture can stably achieve 10-ohm and 50-ohm port impedance characteristics in the X-band without obvious deviation.

[0081] Figure 8 The figure shows the simulation results of the performance of the first test fixture according to the embodiment of this application. The horizontal axis represents the frequency (in GHz), and the vertical axis represents the reflection coefficient / transmission coefficient (in dB). The red curve represents the transmission coefficient S21, and the black curve represents the reflection coefficient S11. The simulation results show that S11≤-20dB and S21≥-0.21dB in the X-band, indicating excellent matching performance and extremely low transmission loss. Low reflection and low loss impedance transformation is achieved in the X-band.

[0082] In the above embodiments, the design and application of the first test fixture provide a professional and efficient solution for the performance testing of non-standard impedance power amplifiers. On one hand, this fixture overcomes the technical limitation that standard test equipment cannot directly interface with non-standard impedance devices. Through impedance transformation, it achieves compatibility between general-purpose test instruments and customized non-standard devices, eliminating the need for separate development of dedicated test equipment and significantly reducing the testing cost and R&D investment for non-standard impedance components. On the other hand, the impedance transformation network inside the fixture adopts a low-loss design, minimizing signal loss and distortion during signal transmission while completing impedance transformation. This ensures the integrity and accuracy of the test signal, allowing the parameters acquired by the test equipment to truly reflect the actual operating performance of the non-standard impedance power amplifier, thus improving the accuracy of performance verification.

[0083] In some embodiments, a third high-power transceiver component is provided. Figure 9 This is a structural block diagram of a third type of high-power transceiver component according to an embodiment of this application, such as... Figure 9 As shown, the high-power transceiver assembly also includes an antenna 15;

[0084] Antenna 15 is connected to the third port of non-standard circulator 14; the interconnection interface impedance between the third port of non-standard circulator 14 and the port of antenna 15 is the third impedance; the third impedance is higher than the standard impedance.

[0085] Among them, antenna 15 is the core component for radiating and transmitting signals and receiving external radio frequency signals. The input port of antenna 15 is directionally connected to the third port of non-standard circulator 14. The impedance value of the interconnection interface between the two is set as the third impedance. This third impedance is a non-standard impedance that is different from the 50-ohm radio frequency standard impedance and has a higher resistance value than the 50-ohm standard impedance. For example, it is set to 110 ohms to meet the impedance matching requirements of the antenna and the non-standard circulator.

[0086] In the above embodiments, the interconnection interface between the third port of the non-standard circulator 14 and the antenna 15 is designed to have a third impedance higher than the standard impedance. This not only matches the impedance characteristics of the antenna 15 and the non-standard circulator 14, but also achieves impedance optimization for the interaction between the transceiver components and external signals. This design allows the antenna 15 to achieve efficient docking with the non-standard circulator 14 without the need for an additional complex low-impedance matching network. It significantly reduces the impedance transformation ratio between the antenna and the circulator, reduces signal insertion loss during impedance transformation, and improves the radiation efficiency of the transmitted signal and the acquisition efficiency of the received signal.

[0087] In some embodiments, the antenna contains multiple quarter-wavelength impedance transformation lines;

[0088] Multi-section quarter-wavelength impedance transformation lines are used to transform the spatial characteristic impedance of an antenna to a third impedance.

[0089] The aforementioned quarter-wavelength impedance serves as the core impedance matching structure of the antenna. Based on the design principle of broadband impedance transformation, the number of sections and parameters are customized. One end connects to the radiating element of the antenna, receiving the inherent 377-ohm spatial characteristic impedance of the antenna itself. The other end connects to the input port of the antenna. Through a stepped transition method of multi-section impedance transformation, the 377-ohm spatial characteristic impedance can be smoothly and efficiently transformed step by step to a third impedance (such as 110 ohms) that is compatible with the third port of the non-standard circulator, thereby achieving precise matching between the internal characteristic impedance of the antenna and the external interconnect interface impedance.

[0090] In the above embodiments, the transformation line achieves broadband impedance matching from 377 ohms to the third impedance through a multi-stage stepped impedance transition. Compared with the traditional single-stage transformation structure, this effectively broadens the frequency range of impedance matching, ensuring impedance matching performance across the entire X-band and meeting the broadband operating requirements of high-power transceiver components. The stepped, step-by-step transformation significantly reduces signal reflection caused by impedance abrupt changes, reduces signal insertion loss at the antenna-circuit interconnect interface, and improves the radiation efficiency of the transmitted signal and the acquisition efficiency of the received signal, allowing more RF signals to be efficiently transmitted between the antenna and the circuit. Furthermore, the transformation line is directly integrated inside the antenna or in the feed network, eliminating the need for an additional impedance matching network outside the antenna. This simplifies the structural design of the entire transceiver component, reduces its overall size and layout complexity, and also reduces device losses and failure probability caused by external matching networks.

[0091] In some embodiments, the high-power transceiver assembly further includes a second test fixture;

[0092] The second test fixture is connected to the third port of the non-standard circulator and to the test equipment. It is used to convert the inherent impedance and the third impedance of the test equipment so that the test equipment can verify the performance of the third port of the non-standard circulator.

[0093] Specifically, the high-power transceiver unit is also equipped with a second test fixture (see [link]). Figure 10 This fixture serves as a dedicated impedance conversion component for adapting the third port of a non-standard circulator to standard test equipment. Its non-standard impedance end ( Figure 10 The left end of the circuit is connected to the third port of the non-standard circulator, and the standard impedance end ( Figure 10 The right end of the circuit connects to external general-purpose RF test equipment. The core uses an internally integrated customized impedance transformation network to achieve efficient conversion between the inherent standard impedance of the test equipment and the third impedance of the third port of the non-standard circulator, thereby enabling the standard test equipment to perform comprehensive performance verification tests on the third port of the non-standard circulator.

[0094] Figure 11 This is a simulation result diagram of the port impedance of the second test fixture according to the embodiment of this application. The horizontal axis is the frequency (in GHz), covering the core frequency band of the X-band; the vertical axis is the real part of the impedance (in Ω). The two curves in the figure correspond to the two ports of the fixture respectively. The red curve is the real part of the impedance when the fixture is connected to the 110-ohm non-standard port, and the black curve is the real part of the impedance when the fixture is connected to the 50-ohm standard port. The trend of the curves intuitively reflects the stability of the port impedance at different frequencies, verifying that the fixture can stably achieve the port impedance characteristics of 110Ω and 50Ω in the X-band without obvious deviation.

[0095] Figure 12The figure shows the simulation results of the second test fixture according to the embodiments of this application. The horizontal axis represents the frequency (in GHz), and the vertical axis represents the reflection coefficient / transmission coefficient (in dB). The red curve represents the transmission coefficient S21, and the black curve represents the reflection coefficient S11. The simulation results show that S21 ≥ -0.4 dB and S11 ≤ -15 dB in the X-band, indicating good matching performance and low transmission loss, which ensures low reflection and low loss signal transmission in the X-band.

[0096] The design and application of the second test fixture in the above embodiments effectively solves the technical problem that the high impedance characteristics of the third port of a non-standard circulator prevent direct connection with standard test equipment. Through precise impedance transformation, this fixture allows general-purpose standard test equipment to directly test key RF indicators such as transmission and reflection characteristics of the third port of the non-standard circulator, eliminating the need for separate development of dedicated test devices and significantly reducing the testing and development costs and equipment investment for the components. Its internal impedance transformation network adopts a low-loss design, minimizing signal transmission loss and distortion while completing impedance transformation, ensuring that the test data accurately reflects the actual working performance of the third port of the non-standard circulator, and improving the accuracy and reliability of performance verification. Simultaneously, the modular docking structure of this fixture makes the test link setup convenient and efficient, allowing for rapid connection with non-standard circulators and test equipment, shortening the component testing cycle, improving the overall R&D and production debugging efficiency of high-power transceiver components, and providing reliable measured data support for the design optimization and performance improvement of non-standard circulators.

[0097] In some embodiments, a fourth high-power transceiver component is provided. Figure 13 This is a structural block diagram of a fourth high-power transceiver component according to an embodiment of this application, as shown below. Figure 13 As shown, the radio frequency receiving link 12 includes a non-standard low noise amplifier 121;

[0098] The non-standard low-noise amplifier 121 is connected to the amplitude-phase multifunction chip 13 and to the second port of the non-standard circulator 14; the interconnection interface impedance between the input port of the non-standard low-noise amplifier 121 and the second port of the non-standard circulator 14 is the second impedance.

[0099] In this high-power transceiver component, the core configuration of the RF receiving link 12 is a non-standard low-noise amplifier 121. The signal output of this amplifier is directionally connected to the amplitude-phase multifunction chip 13, while its signal input is precisely connected to the second port of the non-standard circulator 14. This forms a stable RF signal transmission path. The interconnection interface between the input port of the non-standard low-noise amplifier 121 and the second port of the non-standard circulator 14 is set to a second impedance (e.g., 35 ohms). This impedance value precisely matches the optimal noise impedance characteristics of the non-standard low-noise amplifier 121, becoming the core impedance design parameter for achieving low-noise signal amplification in the receiving link. The theoretical basis for this impedance matching design stems from the noise figure calculation formula for low-noise amplifiers, F = + 2 Where F is the actual noise figure, F min For the minimum noise figure, R n G is the equivalent noise resistance. s For source conductivity, Y s For source admittance, Y opt This represents the optimal noise admittance. From the above formula, we can see that the input admittance (i.e., the source admittance Y) is... s The closer to the optimal noise admittance Y opt The lower the system noise, the better. Based on this principle, this design precisely matches the interconnect interface impedance to the amplifier's optimal noise impedance to achieve the minimum noise figure.

[0100] Figure 14 This diagram shows the noise figure circle of the X-band low-noise amplifier according to an embodiment of this application. Its core function is to determine the optimal noise impedance of the low-noise amplifier, providing a simulation basis for the design of the 35-ohm interconnect interface impedance of the transceiver link. In the diagram, the blue circle represents the noise figure circle, the red circle represents the gain coefficient circle, m5 is the optimal noise figure point, and m6 is the optimal gain point. The optimal noise impedance obtained from the simulation at point m5 is 35.344 - j × 10.465 ohms. Taking its real part of 35 ohms as the design value (second impedance) of the interconnect interface impedance between the non-standard circulator and the non-standard low-noise amplifier, it provides a crucial simulation-based quantitative basis for determining the 35-ohm non-standard impedance of the receiving link.

[0101] In the above embodiments, the interconnection interface impedance between the core component of the RF receiving link, the non-standard low-noise amplifier, and the second port of the non-standard circulator is designed as the second impedance to match the optimal noise impedance of the amplifier, achieving precise and efficient impedance matching of the receiving link. This design eliminates the need for an additional 50-ohm standard impedance matching network for the non-standard low-noise amplifier, allowing it to directly achieve impedance matching with the non-standard circulator. This significantly simplifies the circuit structure of the receiving link, reduces the number of components and layout complexity, and avoids signal insertion loss caused by an additional matching network, thereby improving the transmission efficiency of the received signal. Furthermore, the precise matching of the second impedance with the optimal noise source impedance of the amplifier ensures that the non-standard low-noise amplifier always operates in its optimal state with the minimum noise figure, maximizing the suppression of noise interference during signal amplification. This significantly improves the component's ability to receive and amplify weak external RF signals, optimizing the overall RF performance of the receiving link.

[0102] In some of these embodiments, the non-standard low-noise amplifier includes a second impedance matching circuit;

[0103] The second impedance matching circuit is used to match the die input impedance of the non-standard low-noise amplifier to the second impedance.

[0104] The non-standard low-noise amplifier integrates a customized second impedance matching circuit. This circuit serves as the core impedance transformation module that adapts the low-noise amplifier die to the external interconnection interface. It is specifically designed based on the inherent input impedance characteristics of the non-standard low-noise amplifier die and the preset second impedance parameters. It can accurately and efficiently transform the input impedance of the non-standard low-noise amplifier die itself to a second impedance (such as 35 ohms) that matches the second port of the non-standard circulator. This achieves precise matching between the die's input impedance and the external interconnection interface impedance, allowing the input port of the non-standard low-noise amplifier to form an impedance-matched signal transmission interface with the second port of the non-standard circulator.

[0105] In the above embodiments, the design and integration of the second impedance matching circuit provides core technical support for the non-standard low-noise amplifier to achieve optimal noise figure operation. This circuit accurately transforms the die input impedance to the second impedance, ensuring a high degree of match between the input impedance of the non-standard low-noise amplifier and the optimal noise source impedance. This guarantees that the amplifier always operates at its optimal state with the lowest noise figure, maximizing the suppression of noise interference during signal amplification and significantly improving the component's ability to receive and amplify weak radio frequency signals. Simultaneously, this matching circuit is directly integrated inside the non-standard low-noise amplifier, eliminating the need for an additional impedance matching network outside the amplifier. This simplifies the overall structure of the radio frequency receiving link, reduces signal insertion loss from external components, and improves the transmission efficiency of the received signal.

[0106] In some embodiments, the non-standard circulator includes a first port, a second port, and a third port; the impedance of the first port is a first impedance; the impedance of the second port is a second impedance; and the impedance of the third port is a third impedance.

[0107] The aforementioned non-standard circulator is a customized three-port RF device. Its three ports are designed as the first port, the second port, and the third port, respectively. Each port is customized with different impedances according to the impedance requirements of the connected link. The impedance value of the first port is precisely matched to the first impedance (e.g., 10 ohms) for interconnection with the output of the RF transmit link. The impedance value of the second port is set to the second impedance (e.g., 35 ohms) to connect with the input of the RF receive link. The third port is configured with the third impedance (e.g., 110 ohms) as a dedicated port for connecting to the antenna. The non-standard impedance design of the three ports is matched with the optimal operating impedance of the corresponding interconnect device, forming a core interconnect device that adapts to the non-standard impedance system of the entire transceiver assembly.

[0108] Figure 15 This is a schematic diagram of the X-band non-standard circulator port design according to an embodiment of this application. The port impedance connected to the non-standard circulator and the non-standard impedance power amplifier is a non-standard impedance of 10 ohms, and the optimal load impedance of the non-standard impedance power amplifier is matched to 10 ohms through a matching circuit; the port impedance connected to the non-standard circulator and the non-standard low-noise amplifier is a non-standard impedance of 35 ohms, and the optimal noise impedance of the non-standard low-noise amplifier is matched to 35 ohms through a matching circuit; the port impedance connected to the non-standard circulator and the antenna is a non-standard impedance of 110 ohms, and the characteristic impedance of the antenna of 377 ohms is matched to the port impedance of the high-power non-standard circulator through multiple quarter-wavelength lines.

[0109] In the above embodiments, the differentiated three-port impedance design of the non-standard circulator breaks through the design limitations of the traditional circulator's uniform standard impedance, becoming the core connecting component of the entire non-standard impedance system. Firstly, the impedance of each port is precisely matched with the optimal operating impedance of the corresponding link and device, allowing seamless interconnection between the transmit link, receive link, antenna, and circulator without the need for additional impedance matching networks. This significantly reduces insertion loss caused by impedance transformation, improves the signal transmission efficiency of the entire component, and simplifies the overall structure, reducing size and design complexity. Secondly, the customized impedance design of the three ports respectively meets the different requirements of low impedance for the transmit link, optimal noise impedance for the receive link, and high impedance for the antenna, allowing the characteristics of the power amplifier, low-noise amplifier, and antenna to be fully utilized. This enables the collaborative operation of each device under optimal working conditions, effectively improving the overall RF performance of the component. Thirdly, this design allows the non-standard impedance system of the entire transceiver component to form a complete closed loop, enabling the impedance design of the transmit and receive links and the impedance transformation of the antenna to work in synergy. This further ensures the wideband operating characteristics of the component in the X-band, solves the technical bottleneck of narrow bandwidth of the component under the traditional standard impedance design, and improves the compatibility and working stability between the various modules of the component.

[0110] Those skilled in the art should understand that the technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments have been described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0111] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A high-power transceiver component, characterized in that, include: RF transmit link, RF receive link, amplitude and phase multifunction chip and non-standard circulator; The radio frequency transmission link is connected to the amplitude-phase multifunction chip and the non-standard circulator, and is used to amplify the first signal received from the amplitude-phase multifunction chip with high power and then send it to the non-standard circulator; the interconnection interface impedance between the output port of the radio frequency transmission link and the first port of the non-standard circulator is a first impedance; the first impedance is lower than a preset standard impedance. The radio frequency receiving link is connected to the amplitude-phase multifunction chip and the non-standard circulator, and is used to amplify the second signal received from the non-standard circulator with low noise before sending it to the amplitude-phase multifunction chip; the interconnection interface impedance between the input port of the radio frequency receiving link and the second port of the non-standard circulator is a second impedance; the second impedance matches the optimal noise impedance of the non-standard low noise amplifier in the radio frequency receiving link, and the second impedance is lower than the standard impedance.

2. The high-power transceiver component according to claim 1, characterized in that, The radio frequency transmission link includes a driver amplifier, an isolator, and a non-standard impedance power amplifier; The drive amplifier is connected to the amplitude-phase multifunction chip and to the isolator; The non-standard impedance power amplifier is connected to the isolator and to the first port of the non-standard circulator; the interconnection interface impedance between the output port of the non-standard impedance power amplifier and the first port of the non-standard circulator is the first impedance.

3. The high-power transceiver component according to claim 2, characterized in that, The non-standard impedance power amplifier includes a first impedance matching circuit; the first impedance matching circuit includes a first inductor, a second inductor, a first capacitor, and a second capacitor; The first inductor is connected to the die output terminal of the non-standard impedance power amplifier, and is also connected to one end of the second inductor and the first capacitor; the other end of the first capacitor is grounded. The second inductor is also connected to the first port of the non-standard circulator and one end of the second capacitor; the other end of the second capacitor is grounded. The first impedance matching circuit is used to match the die output impedance of the non-standard impedance power amplifier to the first impedance.

4. The high-power transceiver component according to claim 2, characterized in that, The high-power transceiver assembly also includes a first test fixture; One end of the first test fixture is connected to the input and output terminals of the non-standard impedance power amplifier, and the other end of the first test fixture is connected to the test equipment. The first test fixture is used to convert the inherent impedance of the test equipment and the first impedance so that the test equipment can perform performance verification on the non-standard impedance power amplifier.

5. The high-power transceiver component according to claim 1, characterized in that, The high-power transceiver assembly also includes an antenna; The antenna is connected to the third port of the non-standard circulator; the interconnection interface impedance between the third port of the non-standard circulator and the antenna port is a third impedance; the third impedance is higher than the standard impedance.

6. The high-power transceiver component according to claim 5, characterized in that, The antenna contains multiple quarter-wavelength impedance transformation lines. The multi-section quarter-wavelength impedance transformation line is used to transform the spatial characteristic impedance of the antenna to the third impedance.

7. The high-power transceiver component according to claim 5, characterized in that, The high-power transceiver assembly also includes a second test fixture; The second test fixture is connected to the third port of the non-standard circulator and to the test equipment, and is used to convert the inherent impedance of the test equipment and the third impedance so that the test equipment can perform performance verification on the third port of the non-standard circulator.

8. The high-power transceiver component according to claim 1, characterized in that, The radio frequency receiving link includes a non-standard low-noise amplifier; The non-standard low-noise amplifier is connected to the amplitude-phase multifunction chip and to the second port of the non-standard circulator; the interconnection interface impedance between the input port of the non-standard low-noise amplifier and the second port of the non-standard circulator is the second impedance.

9. The high-power transceiver component according to claim 8, characterized in that, The non-standard low-noise amplifier includes a second impedance matching circuit. The second impedance matching circuit is used to match the die input impedance of the non-standard low-noise amplifier to the second impedance.

10. The high-power transceiver component according to claim 1, characterized in that, The non-standard circulator includes a first port, a second port, and a third port; the impedance value of the first port is the first impedance; the impedance value of the second port is the second impedance; and the impedance value of the third port is the third impedance.

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