A photovoltaic glass for reducing color difference of a BC photovoltaic module, a preparation method thereof, and a photovoltaic module

Abstract

The application provides a photovoltaic glass for reducing color difference of a BC photovoltaic module, a preparation method thereof and a photovoltaic module, and relates to the field of photovoltaic modules. The photovoltaic glass comprises a substrate layer and, in sequence from the direction away from the substrate layer, an inner layer anti-reflection coating layer, an outer layer spectrum regulation layer and a surface functional layer. The photovoltaic glass for reducing color difference of a BC photovoltaic module provided by the application combines four mechanisms of diffuse reflection, refractive index matching, spectrum filtering and low-reflection surface to reduce the spectrum deviation of reflected light and further regulate the color difference.

Description

Technical Field

[0001] This application relates to the field of photovoltaic modules, and more particularly to a photovoltaic glass for reducing color difference in BC photovoltaic modules, a method for preparing the same, and a photovoltaic module thereof. Background Technology

[0002] In the field of photovoltaic modules, reducing light reflection loss on the glass surface and increasing light transmittance are key requirements for improving device performance and visual effects. Double-layer anti-reflective coated glass is a common technical solution to meet this need. This technology typically involves depositing two optical thin films with different refractive indices sequentially on the surfaces of two glass substrates using processes such as physical vapor deposition (PVD) and chemical vapor deposition (CVD).

[0003] However, existing double-layer antireflective coating technology has the following significant drawbacks, limiting its application effectiveness. Firstly, its spectral control capability is limited and singular, with optimization primarily focused on minimizing average reflectance or increasing average transmittance within a specific wavelength range. This design makes it difficult to achieve precise control over the shape of the transmission spectrum. Its core deficiency lies in its inability to effectively balance or compensate for differences in light transmission characteristics across different wavelength bands, particularly the inability to selectively absorb or suppress specific harmful or tunable wavelengths. Secondly, due to the lack of effective control over the spectral shape, the transmission spectrum of double-layer coated glass may exhibit uneven transmittance across different wavelength regions. When applied to scenarios requiring high color consistency, even minor fluctuations in the coating process can easily cause shifts in its reflectance or transmission spectra. These spectral shifts manifest as noticeable color differences to the human eye, affecting not only the uniformity and aesthetics of the product's appearance but, in the photovoltaic field, severe color differences can even lead to module downgrading or scrapping due to customer complaints, resulting in economic losses. Summary of the Invention

[0004] The purpose of this application is to provide a photovoltaic glass for reducing color difference in BC photovoltaic modules, a method for preparing the same, and a photovoltaic module thereof, in order to solve the above-mentioned problems.

[0005] To achieve the above objectives, this application adopts the following technical solution:

[0006] This application provides a photovoltaic glass for reducing color difference in BC photovoltaic modules, comprising a substrate layer and an inner antireflective coating layer, an outer spectral modulation layer, and a surface functional layer sequentially disposed in a direction away from the substrate layer.

[0007] Optionally, the material of the substrate layer includes patterned glass, wherein the light transmittance of the patterned glass is not less than 91.5%.

[0008] Optionally, the embossed glass surface is provided with a micron-level pyramid texture, the height of which is 5-15μm and the spacing is 20-50μm.

[0009] Optionally, the inner antireflective coating layer includes a MgF2 layer and a SiO2 layer disposed sequentially in the direction away from the substrate layer.

[0010] Optionally, the refractive index of the MgF2 layer is 1.37-1.39, and the thickness of the MgF2 layer is 40-70 nm.

[0011] Optionally, the refractive index of the SiO2 layer is 1.45-1.47, and the thickness of the SiO2 layer is 50-80 nm.

[0012] Optionally, the outer spectral modulation layer includes Fe-doped layers. 2+ and Co 2+ SiN x Thin film, the Fe 2+ With the Co 2+ The doping molar ratio is 3-5:1, and the doping concentration is not higher than 0.5wt%.

[0013] Optionally, the surface functional layer includes a nanoporous SiO2 layer, with nanopores having a pore size of 5-20 nm, a porosity of 23-27%, and a refractive index of 1.18-1.38.

[0014] Optionally, the thickness of the substrate layer is 3.1-3.3 mm.

[0015] Optionally, the thickness of the inner antireflective coating is 80-130 nm.

[0016] Optionally, the thickness of the outer spectral modulation layer is 50-80 nm.

[0017] Optionally, the thickness of the surface functional layer is 30-50 nm.

[0018] This application also provides a method for preparing the photovoltaic glass for reducing color difference in BC photovoltaic modules, the method comprising:

[0019] After cutting the ultra-white glass sheet, the micron-level pyramid texture is applied to the surface; an anti-reflective coating is applied to the inner layer of the patterned glass surface; an outer spectral modulation layer is applied to the surface of the inner anti-reflective coating; a surface functional layer is applied to the surface of the outer spectral modulation layer; and the photovoltaic glass that reduces the color difference of BC photovoltaic modules is obtained after annealing.

[0020] Optionally, the embossed texture of the substrate layer is prepared by a hot pressing process, with a mold temperature of 680-720℃ and a pressure of 10-15MPa.

[0021] Optionally, the inner antireflective coating layer includes the MgF2 layer and the SiO2 layer disposed sequentially;

[0022] The deposition conditions for the MgF2 layer were as follows: a mixed gas atmosphere of SiH4, NF3, and Ar with a volume ratio of 1:0.5:10, a deposition temperature of 200-220℃, a chamber pressure of 150-200Pa, a radio frequency power of 300-350W, and a deposition rate of 0.8-1.0nm / s.

[0023] The deposition conditions for the SiO2 layer are as follows: a mixed gas atmosphere of SiH4, O2, and NH3 with a volume ratio of 1:2:0.3, a deposition temperature of 230-250℃, a chamber pressure of 250-300Pa, a radio frequency power of 400-450W, and a deposition rate of 1.2-1.5nm / s.

[0024] Optionally, the outer spectral modulation layer is set by reactive magnetron sputtering, with the target material composition being Si3N4, Fe3O4, and CoO in a mass ratio of 95-97:2-3:1-2; the DC pulse sputtering power being 380-420W, the duty cycle being 70%, the gas atmosphere being a mixture of Ar and N2 with a volume ratio of 20:1, the chamber pressure being 0.45-0.55Pa, and the deposition rate being 0.45-0.55nm / s;

[0025] Optionally, the conditions for sputtering to prepare the surface functional layer are: sputtering power of 280-330W, argon flow rate of 45-55sccm, and oxygen flow rate of 8-15sccm.

[0026] Optionally, the annealing conditions are: N2 atmosphere, annealing temperature of 400-500℃, and annealing time of 28-40min.

[0027] This application also provides a photovoltaic module, including the photovoltaic glass that reduces the color difference of the BC photovoltaic module.

[0028] Compared with the prior art, the beneficial effects of this application include:

[0029] The photovoltaic glass for reducing chromatic aberration in BC photovoltaic modules provided in this application utilizes micron-level textured diffuse reflection in the substrate layer to weaken the chromatic aberration sensitive angle; a gradient antireflection layer reduces interface reflected light interference through refractive index matching; a spectral modulation layer selectively absorbs the blue light band to balance the color temperature difference between cells; and a nanoporous layer suppresses specular reflection through a low-refractive-index surface. This combination of diffuse reflection, refractive index matching, spectral filtering, and a low-reflection surface—four mechanisms—reduces the reflection spectral shift, thereby controlling chromatic aberration.

[0030] All coating steps in the preparation method provided in this application can be upgraded from existing photovoltaic glass production lines without the need for additional equipment. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation on the scope of this application.

[0032] Figure 1 A schematic diagram of the structure of photovoltaic glass for reducing color difference in BC photovoltaic modules provided in this embodiment;

[0033] Figure 2 This is a photograph of the photovoltaic glass used to reduce color difference in BC photovoltaic modules, prepared as an example.

[0034] The main label information in the attached figure is as follows:

[0035] 100 - Substrate layer; 101 - Inner antireflection coating layer; 1011 - MgF2 layer; 1012 - SiO2 layer; 103 - Outer spectral modulation layer; 104 - Surface functional layer. Detailed Implementation

[0036] As used in this article:

[0037] "Prepared from" is synonymous with "comprising". The terms "comprising", "including", "having", "containing", or any other variations thereof as used herein are intended to cover non-exclusive inclusion. For example, a composition, step, method, article, or apparatus that includes the listed elements is not necessarily limited to those elements, but may include other elements not expressly listed or elements inherent to such composition, step, method, article, or apparatus.

[0038] The conjunction "composed of..." excludes any unspecified elements, steps, or components. If used in a claim, this phrase makes the claim closed, excluding materials other than those described, except for associated conventional impurities. When the phrase "composed of..." appears in a clause of the body of a claim rather than immediately following it, it limits only the elements described in that clause; other elements are not excluded from the claim as a whole.

[0039] When a quantity, concentration, or other value or parameter is expressed as a range, a preferred range, or a range defined by a series of upper and lower preferred values, this should be understood as specifically disclosing all ranges formed by any pair of any upper or preferred value with any lower or preferred value, regardless of whether the range is disclosed individually. For example, when the range “1–5” is disclosed, the described range should be interpreted as including ranges “1–4”, “1–3”, “1–2”, “1–2 and 4–5”, “1–3 and 5”, etc. When numerical ranges are described herein, unless otherwise stated, the range is intended to include its endpoints and all integers and fractions within that range.

[0040] In these embodiments, unless otherwise specified, the portions and percentages are all by weight.

[0041] "Parts by mass" refers to the basic unit of measurement that expresses the mass ratio of multiple components. One part can represent any unit mass, such as 1g or 2.689g. If we say that component A has "a" parts by mass and component B has "b" parts by mass, it means the ratio of the mass of component A to the mass of component B is a:b. Alternatively, it can mean that the mass of component A is aK and the mass of component B is bK (K is any number representing a multiplier). It is important to understand that, unlike the number of parts by mass, the sum of the mass parts of all components is not limited to 100 parts.

[0042] "And / or" is used to indicate that one or both of the described situations may occur, for example, A and / or B includes (A and B) and (A or B).

[0043] To better explain the technical solution provided in this application, the technical solution will be described in its entirety before proceeding with specific implementation methods.

[0044] In a first aspect, this application provides a photovoltaic glass for reducing color difference in BC photovoltaic modules, comprising a substrate layer and an inner antireflective coating layer, an outer spectral modulation layer, and a surface functional layer sequentially disposed in a direction away from the substrate layer.

[0045] Specifically, the substrate layer, serving as the light incident interface, has a surface texture structure that reduces incident light reflection loss. The inner antireflection coating reduces interface reflection over a wide spectral range by precisely controlling the film's refractive index and thickness. The outer spectral modulation layer suppresses transmittance fluctuations in specific wavelength regions through the selective light absorption of doped ions. The surface functional layer reduces the surface refractive index through its nanoporous structure while protecting the underlying film system from environmental corrosion. These functional layers work synergistically to form a composite optical modulation system, enabling active control of the transmission spectrum morphology.

[0046] In an optional embodiment, the substrate layer is made of patterned glass with a light transmittance of not less than 91.5%.

[0047] Optionally, the light transmittance of the patterned glass can be 91.5%, 92%, 92.5%, 93%, 93.5%, 94%, 94.5%, 95%, 95.5%, 96%, 96.5%, 97%, 97.5%, 98%, 98.5%, 99%, 99.5%, 100%, or any value not less than 91.5%.

[0048] When patterned glass is used as a substrate layer, it can reduce the absorption loss of incident light. The microstructure formed on the patterned surface can guide the light propagation path through changes in refractive index gradient, reducing interface reflection. The patterned texture can maintain mechanical strength while causing light to refract multiple times within the glass, thereby improving overall light transmittance. When the light transmittance reaches 91.5% or higher, it can provide a higher intensity of incident light flux for subsequent coating layers, reducing spectral modulation deviations caused by insufficient light transmittance of the substrate.

[0049] In one optional embodiment, the embossed glass surface is provided with a micron-level pyramid texture, the height of which is 5-15 μm and the spacing is 20-50 μm.

[0050] Optionally, the height of the micron-scale pyramid structure texture can be 5μm, 6μm, 7μm, 8μm, 9μm, 10μm, 11μm, 12μm, 13μm, 14μm, 15μm, or any value between 5 and 15μm; the spacing can be 20μm, 25μm, 30μm, 35μm, 40μm, 45μm, 50μm, or any value between 20 and 50μm.

[0051] Micrometer-scale pyramid textures refer to a regularly arranged array of three-dimensional conical structures. This structure enhances light scattering by altering the reflection path of incident light, thereby reducing surface reflectivity. By controlling the height and spacing of the pyramid textures, a balance can be struck between light scattering efficiency and structural mechanical strength, preventing surface damage due to excessive height. Furthermore, the spacing ensures multiple reflections between adjacent structures, preventing uneven coating coverage due to insufficient spacing. Additionally, this structure works synergistically with the inner anti-reflection coating. When light is incident, the pyramid texture first scatters and refracts the incident light, reducing direct reflection loss; subsequently, the anti-reflection coating further optimizes the uniformity of the transmission spectrum. This composite structure design effectively disperses transmission paths of different wavelengths, reducing spectral shifts caused by coating thickness fluctuations, thus suppressing chromatic aberration.

[0052] In an optional embodiment, the inner antireflective coating layer includes a MgF2 layer and a SiO2 layer disposed sequentially in the direction away from the substrate layer.

[0053] In an optional embodiment, the refractive index of the MgF2 layer is 1.37-1.39, wherein the thickness of the MgF2 layer is 40-70 nm.

[0054] Optionally, the refractive index of the MgF2 layer can be 1.37, 1.375, 1.38, 1.385, 1.39, or any value between 1.37 and 1.39; the thickness of the MgF2 layer can be 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, or any value between 40 and 70 nm.

[0055] In one optional embodiment, the refractive index of the SiO2 layer is 1.45-1.47, and the thickness of the SiO2 layer is 50-80 nm.

[0056] Optionally, the refractive index of the SiO2 layer can be 1.45, 1.455, 1.46, 1.465, 1.47, or any value between 1.45 and 1.47; the thickness of the SiO2 layer can be 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, or any value between 50 and 80 nm.

[0057] By constructing a bilayer structure with a specific refractive index gradient, incident light undergoes multiple reflections and interferences as it passes through the interfaces of different film layers. When the refractive index difference and optical thickness of the two layers satisfy a specific relationship, destructive interference occurs between the reflected light from each interface, thereby reducing the overall reflectivity. Simultaneously, the combination of bilayer structures can cover a wider spectral range. By adjusting the refractive index and thickness parameters of each layer, differences in transmission characteristics across different wavelengths can be balanced, suppressing chromatic aberration caused by abrupt changes in transmittance in local wavelengths.

[0058] In one optional embodiment, the outer spectral modulation layer comprises Fe-doped layers. 2+ and Co 2+ SiN x Thin film, the Fe 2+ With the Co 2+ The doping molar ratio is 3-5:1, and the doping concentration is not higher than 0.5wt%.

[0059] Optionally, the Fe 2+ With the Co 2+ The doping molar ratio can be 3:1, 4:1, 5:1, or any value between 3 and 5:1; the doping concentration can be SiN x The content of the thin film is 0.1 wt%, 0.15 wt%, 0.2 wt%, 0.25 wt%, 0.3 wt%, 0.35 wt%, 0.4 wt%, 0.45 wt%, or 0.5 wt% of the total mass of the thin film, or not higher than that of SiN. x Any value of 0.5 wt% of the total mass of the film.

[0060] In an optional embodiment, the surface functional layer comprises a nanoporous SiO2 layer, wherein the pore size is 5-20 nm, the porosity is 23-27%, and the refractive index is 1.18-1.38.

[0061] Optionally, the pore size of the nanoporous SiO2 layer can be 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm, or 20nm, or any value between 5nm and 20nm; the porosity can be 23%, 24%, 25%, 26%, or 27%, or any value between 23% and 27%; the refractive index can be 1.18, 1.19, 1.2, 1.21, 1.22, 1.23, 1.24, 1.25, 1.26, 1.27, 1.28, 1.29, 1.3, 1.31, 1.32, 1.33, 1.34, 1.35, 1.36, 1.37, or 1.38, or any value between 1.18 and 1.38.

[0062] In one optional embodiment, the thickness of the substrate layer is 3.1-3.3 mm.

[0063] Optionally, the thickness of the substrate layer can be 3.1nm, 3.15nm, 3.2nm, 3.25nm, 3.3nm, or any value between 3.1 and 3.3nm.

[0064] In one optional embodiment, the thickness of the inner antireflective coating is 80-130 nm.

[0065] Optionally, the thickness of the inner antireflective coating can be 80nm, 85nm, 90nm, 95nm, 100nm, 105nm, 110nm, 115nm, 120nm, 125nm, 130nm, or any value between 80-130nm.

[0066] In one optional embodiment, the thickness of the outer spectral modulation layer is 50-80 nm.

[0067] Optionally, the thickness of the outer spectral modulation layer can be 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, or any value between 50-80nm.

[0068] In one optional implementation, the thickness of the surface functional layer is 30-50 nm.

[0069] Optionally, the thickness of the surface functional layer can be 30nm, 35nm, 40nm, 45nm, 50nm, or any value between 30-50nm.

[0070] This application also provides a method for preparing the photovoltaic glass for reducing color difference in BC photovoltaic modules, the method comprising:

[0071] After cutting the ultra-white glass sheet, the micron-level pyramid texture is applied to the surface; an anti-reflective coating is applied to the inner layer of the patterned glass surface; an outer spectral modulation layer is applied to the surface of the inner anti-reflective coating; a surface functional layer is applied to the surface of the outer spectral modulation layer; and the photovoltaic glass that reduces the color difference of BC photovoltaic modules is obtained after annealing.

[0072] Through the above technical solution, this application solves the problem that traditional double-layer coating technology cannot balance the differences in transmittance across different wavelengths, significantly reducing color difference caused by fluctuations in coating thickness. The sequential stacking of functional layers during the fabrication process forms a complementary optical control mechanism, enabling the final product to maintain high transmittance while achieving stability in the reflectance spectrum. The porous structure of the surface functional layer further reduces interface reflection, allowing the photovoltaic module to maintain uniform appearance over a long period in outdoor environments.

[0073] In one optional embodiment, the embossed texture of the substrate layer is prepared by a hot pressing process, with a mold temperature of 680-720°C and a pressure of 10-15 MPa.

[0074] Optionally, the mold temperature can be 680℃, 685℃, 690℃, 695℃, 700℃, 705℃, 710℃, 715℃, 720℃, or any value between 680℃ and 720℃; the mold pressure can be 10MPa, 11MPa, 12MPa, 13MPa, 14MPa, 15MPa, or any value between 10MPa and 15MPa.

[0075] In an optional embodiment, the inner antireflective coating layer includes the MgF2 layer and the SiO2 layer disposed sequentially.

[0076] The deposition conditions for the MgF2 layer were as follows: a mixed gas atmosphere of SiH4, NF3, and Ar with a volume ratio of 1:0.5:10, a deposition temperature of 200-220℃, a chamber pressure of 150-200Pa, a radio frequency power of 300-350W, and a deposition rate of 0.8-1.0nm / s.

[0077] Optionally, the deposition temperature of the MgF2 layer can be 200℃, 205℃, 210℃, 215℃, 220℃, or any value between 200℃ and 220℃; the chamber pressure can be 150Pa, 155Pa, 160Pa, 165Pa, 170Pa, 175Pa, 180Pa, 185Pa, 190Pa, 195Pa, 200Pa, or any value between 150Pa and 200Pa. One value; the RF power can be 300W, 305W, 310W, 315W, 320W, 325W, 330W, 335W, 340W, 345W, 350W, or any value between 300-350W; the deposition rate can be 0.8nm / s, 0.85nm / s, 0.9nm / s, 0.95nm / s, 1nm / s, or any value between 0.8-1nm / s.

[0078] The deposition conditions for the SiO2 layer are as follows: a mixed gas atmosphere of SiH4, O2, and NH3 with a volume ratio of 1:2:0.3, a deposition temperature of 230-250℃, a chamber pressure of 250-300Pa, a radio frequency power of 400-450W, and a deposition rate of 1.2-1.5nm / s.

[0079] Optionally, the deposition temperature of the SiO2 layer can be 230℃, 235℃, 240℃, 245℃, 250℃, or any value between 230℃ and 250℃; the strong pressure can be 250Pa, 255Pa, 260Pa, 265Pa, 270Pa, 275Pa, 280Pa, 285Pa, 290Pa, 295Pa, 300Pa, or any value between 250℃ and 300Pa; the RF power can be... 400W, 405W, 410W, 415W, 420W, 425W, 430W, 435W, 440W, 445W, 450W, or any value between 400-450W; the deposition rate can be 1.2nm / s, 1.25nm / s, 1.3nm / s, 1.35nm / s, 1.4nm / s, 1.45nm / s, 1.5nm / s, or any value between 1.2-1.5nm / s.

[0080] In one optional embodiment, the outer spectral modulation layer is formed by reactive magnetron sputtering. The target material composition is Si3N4, Fe3O4, and CoO in a mass ratio of 95-97:2-3:1-2. The sputtering power of the DC pulse is 380-420W, the duty cycle is 70%, the gas atmosphere is a mixture of Ar and N2 with a volume ratio of 20:1, the chamber pressure is 0.45-0.55Pa, and the deposition rate is 0.45-0.55nm / s.

[0081] Optionally, the mass ratio of Si3N4, Fe3O4, and CoO can be 95:2:1, 95:3:1, 95:3:2, 96:2:1, 96:3:1, 96:3:2, 97:2:1, 97:3:1, 97:3:2, or any value between 95 and 97:2-3:1-2; the DC pulse power can be 380W, 385W, 390W, 395W, 400W, 405W, 410W, 415W, 420W, or any value between 380 and 420W; the chamber pressure can be 0.45Pa, 0.46Pa, 0. The pressure can be 0.47 Pa, 0.48 Pa, 0.49 Pa, 0.5 Pa, 0.51 Pa, 0.52 Pa, 0.53 Pa, 0.54 Pa, 0.55 Pa, or any value between 0.45 and 0.55 Pa; the deposition rate can be 0.45 nm / s, 0.46 nm / s, 0.47 nm / s, 0.48 nm / s, 0.49 nm / s, 0.5 nm / s, 0.51 nm / s, 0.52 nm / s, 0.53 nm / s, 0.54 nm / s, 0.55 nm / s, or any value between 0.45 and 0.55 nm / s.

[0082] In one optional embodiment, the conditions for sputtering to prepare the surface functional layer are: sputtering power of 280-330W, argon flow rate of 45-55sccm, and oxygen flow rate of 8-15sccm.

[0083] Optionally, the power output can be 280W, 285W, 290W, 295W, 300W, 305W, 310W, 315W, or 320W, or any value between 280W and 300W; the argon flow rate can be 45sccm, 46sccm, 47sccm, 48sccm, 49sccm, 50sccm, 51sccm, 52sccm, 53sccm, 54sccm, or 55sccm, or any value between 45 and 55sccm; the oxygen flow rate can be 8sccm, 9sccm, 10sccm, 11sccm, 12sccm, 13sccm, 14sccm, or 15sccm, or any value between 8 and 15sccm.

[0084] In one optional embodiment, the annealing conditions are: N2 atmosphere, annealing temperature of 400-500℃, and time of 28-40min.

[0085] Optionally, the annealing temperature can be 400℃, 410℃, 420℃, 430℃, 440℃, 450℃, 460℃, 470℃, 480℃, 490℃, 500℃, or any value between 400℃ and 500℃; the annealing time can be 28min, 29min, 30min, 31min, 32min, 33min, 34min, 35min, 36min, 37min, 38min, 39min, 40min, or any value between 28min and 40min.

[0086] This application also provides a photovoltaic module, including the photovoltaic glass that reduces the color difference of the BC photovoltaic module.

[0087] The implementation schemes of this application will be described in detail below with reference to specific embodiments. However, those skilled in the art will understand that the following embodiments are only for illustrating this application and should not be regarded as limiting the scope of this application. Unless otherwise specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Reagents or instruments used without specified manufacturers are all conventional products that can be purchased commercially.

[0088] Example 1

[0089] This embodiment provides a photovoltaic glass for reducing color difference in BC photovoltaic modules, as shown in the schematic diagram below. Figure 1 As shown, the specific structure is as follows:

[0090] Substrate layer 100: Patterned glass (Xinyi Solar DG-3.2): The height of the micron-level pyramid texture on the surface is 13μm, the spacing is 35μm, and the light transmittance is 92.1%.

[0091] It also includes those arranged sequentially away from the patterned glass:

[0092] Inner anti-reflective coating layer 101: In the direction away from the patterned glass, there are MgF2 layer 1011 and SiO2 layer 1012 in sequence; MgF2 layer 1011 has a thickness of 50nm and a refractive index of 1.38; SiO2 layer 1012 has a thickness of 70nm and a refractive index of 1.46.

[0093] Outer spectral modulation layer 102: 60 nm thick.

[0094] Surface functional layer 103: is a nanoporous SiO2 layer with a thickness of 40nm, a porosity of 25%, a pore size of 10nm, and a refractive index of 1.28.

[0095] This embodiment also provides a method for preparing photovoltaic glass to reduce color difference in BC photovoltaic modules, the specific steps of which are as follows:

[0096] After cutting the original patterned glass sheet, a micron-level pyramid texture is rolled onto the surface of the patterned glass using a patterning mold at a temperature of 690℃ and a pressure of 12MPa.

[0097] Using PlasmaPro 1000 and the PECVD method, a MgF2 layer was deposited. The deposition process is as follows:

[0098] Step 1: Substrate pretreatment: Place the ultra-white patterned glass substrate with micron-level pyramid texture (preheated to 200℃) into the PECVD chamber carrier; purge the chamber with argon (Ar) gas (flow rate 500 sccm, 5 minutes) to remove residual particles.

[0099] Step 2: Introduce the reaction gas; start the mixed gas: silane (SiH4): 20 sccm; nitrogen trifluoride (NF3): 10 sccm; argon (Ar): 200 sccm; gas volume ratio: SiH4:NF3:Ar = 1:0.5:10;

[0100] Step 3: Plasma excitation and deposition; RF power: 320W (13.56MHz, matching impedance 50Ω); Chamber pressure: 180Pa (vacuum pump speed maintained constant); Substrate temperature: 210℃ (thermocouple closed-loop temperature control ±3℃); Deposition time: 60 seconds (real-time laser interferometer monitoring, terminated at 50±5nm);

[0101] Step 4: After in-situ annealing deposition, the temperature is raised to 250°C in a nitrogen atmosphere and held for 10 minutes to eliminate film stress.

[0102] The SiO2 layer deposition process is as follows:

[0103] Step 1: Switch the reaction gas:

[0104] Turn off SiH4 / NF3, and introduce:

[0105] Silane (SiH4): 30 sccm;

[0106] Oxygen (O2): 60 sccm;

[0107] Ammonia (NH3): 9 sccm;

[0108] Gas volume ratio: SiH4:O2:NH3 = 1:2:0.3;

[0109] Step 2: Plasma Deposition:

[0110] RF power: 420W (pulse mode, 80% duty cycle);

[0111] Chamber pressure: 280 Pa;

[0112] Substrate temperature: 240℃ (to ensure film densification);

[0113] Deposition time: 50 seconds (optical emission spectrum monitoring of Si*288nm peak, terminated at 70±5nm);

[0114] Step 3: Post-processing

[0115] After deposition, pure oxygen (100 sccm, 5 minutes) is introduced to fill the silicon dangling bonds;

[0116] Gradual cooling to 100℃ (rate 5℃ / min) to prevent film cracking.

[0117] The fabrication process of the infrared spectral modulation layer is as follows:

[0118] The outer spectral modulation layer was magnetron sputtered using a Leybold Optics SYRUSpro 710 on the surface of the inner antireflection coating layer. The target material was Si3N4, Fe3O4, and CoO with a mass ratio of 95:3:2. The sputtering power of the DC pulse was 400W, the duty cycle was 70%, the gas atmosphere was a mixture of Ar and N2 with a volume ratio of 20:1, the chamber pressure was 0.5Pa, and the deposition rate was 0.5nm / s.

[0119] The surface functional layer fabrication process is as follows:

[0120] A nanoporous SiO2 layer was sputtered using a Leybold Optics SYRUSpro 710 with a sputtering power of 300W, an argon flow rate of 50 sccm, and an oxygen flow rate of 10 sccm.

[0121] Annealing was performed using Leybold Optics SYRUSpro 710, held at 450°C for 30 minutes in a N2 atmosphere.

[0122] The photovoltaic glass produced reduces color difference in BC photovoltaic modules, such as Figure 2 As shown.

[0123] Example 2

[0124] This embodiment provides a photovoltaic glass for reducing color difference in BC photovoltaic modules, with the following structure:

[0125] Substrate layer 100: Patterned glass (Xinyi Solar DG-3.2): The height of the micron-level pyramid texture on the surface is 13μm, the spacing is 35μm, and the light transmittance is 92.1%.

[0126] It also includes those arranged sequentially away from the patterned glass:

[0127] Inner anti-reflective coating layer 101: MgF2 layer 1011 and SiO2 layer 1012 are arranged sequentially in the direction away from the patterned glass; MgF2 layer 1011 has a thickness of 55nm and a refractive index of 1.39; SiO2 layer 1012 has a thickness of 75nm and a refractive index of 1.47.

[0128] Outer spectral modulation layer 102: 60 nm thick.

[0129] Surface functional layer 103: is a nanoporous SiO2 layer with a thickness of 40nm, a porosity of 25%, a pore size of 10nm, and a refractive index of 1.30.

[0130] This embodiment also provides a method for preparing photovoltaic glass to reduce color difference in BC photovoltaic modules, the specific steps of which are as follows:

[0131] Using PlasmaPro 1000 and the PECVD method, a MgF2 layer was deposited. The deposition process is as follows:

[0132] Step 1: Substrate pretreatment: Place the ultra-white patterned glass substrate with micron-level pyramid texture (preheated to 200℃) into the PECVD chamber carrier; purge the chamber with argon (Ar) gas (flow rate 500 sccm, 5 minutes) to remove residual particles.

[0133] Step 2: Introduce the reaction gas; start the mixed gas: silane (SiH4): 20 sccm; nitrogen trifluoride (NF3): 10 sccm; argon (Ar): 200 sccm; gas volume ratio: SiH4:NF3:Ar = 1:0.5:10;

[0134] Step 3: Plasma excitation and deposition; RF power: 320W (13.56MHz, matching impedance 50Ω); Chamber pressure: 180Pa (vacuum pump speed maintained constant); Substrate temperature: 210℃ (thermocouple closed-loop temperature control ±3℃); Deposition time: 63 seconds (real-time laser interferometer monitoring, terminated at 55±5nm);

[0135] Step 4: After in-situ annealing deposition, the temperature is raised to 250°C in a nitrogen atmosphere and held for 10 minutes to eliminate film stress.

[0136] The SiO2 layer deposition process is as follows:

[0137] Step 1: Switch the reaction gas:

[0138] Turn off SiH4 / NF3, and introduce:

[0139] Silane (SiH4): 30 sccm;

[0140] Oxygen (O2): 60 sccm;

[0141] Ammonia (NH3): 9 sccm;

[0142] Gas volume ratio: SiH4:O2:NH3 = 1:2:0.3;

[0143] Step 2: Plasma Deposition:

[0144] RF power: 420W (pulse mode, 80% duty cycle);

[0145] Chamber pressure: 280 Pa;

[0146] Substrate temperature: 240℃ (to ensure film densification);

[0147] Deposition time: 52 seconds (optical emission spectrum monitoring of Si*288nm peak, terminated at 75±5nm).

[0148] Step 3: Post-processing:

[0149] After deposition, pure oxygen (100 sccm, 5 minutes) is introduced to fill the silicon dangling bonds;

[0150] Gradual cooling to 100℃ (rate 5℃ / min) to prevent film cracking.

[0151] The fabrication process of the infrared spectral modulation layer is as follows:

[0152] A Leybold Optics SYRUSpro 710 magnetron sputtering method was used on the surface of the inner antireflection coating layer to deposit the outer spectral modulation layer. The target material was Si3N4, Fe3O4, and CoO with a mass ratio of 95:3:2. The sputtering conditions were set as follows: DC pulse sputtering power of 400W, duty cycle of 70%, gas atmosphere of Ar and N2 mixed gas with a volume ratio of 20:1, chamber pressure of 0.5Pa, and deposition rate of 0.5nm / s.

[0153] The surface functional layer fabrication process is as follows:

[0154] A nanoporous SiO2 layer was sputtered using a Leybold Optics SYRUSpro 710 with a sputtering power of 300W, an argon flow rate of 50 sccm, and an oxygen flow rate of 10 sccm.

[0155] Annealing was performed using Leybold Optics SYRUSpro 710, held at 450°C for 30 minutes in a N2 atmosphere.

[0156] Example 3

[0157] This embodiment provides a photovoltaic glass for reducing color difference in BC photovoltaic modules, with the following structure:

[0158] Substrate layer 100: Patterned glass (Xinyi Solar DG-3.2): The height of the micron-level pyramid texture on the surface is 13μm, the spacing is 35μm, and the light transmittance is 92.1%.

[0159] It also includes those arranged sequentially away from the patterned glass:

[0160] Inner anti-reflective coating layer 101: MgF2 layer 1011 and SiO2 layer 1012 are arranged sequentially in the direction away from the patterned glass; MgF2 layer 1011 has a thickness of 45nm and a refractive index of 1.38; SiO2 layer 1012 has a thickness of 65nm and a refractive index of 1.46.

[0161] Outer spectral modulation layer 102: 60 nm thick.

[0162] Surface functional layer 103: is a nanoporous SiO2 layer with a thickness of 40nm, a porosity of 21%, a pore size of 10nm, and a refractive index of 1.27.

[0163] This embodiment also provides a method for preparing photovoltaic glass to reduce color difference in BC photovoltaic modules, the specific steps of which are as follows:

[0164] Using PlasmaPro 1000 and the PECVD method, a MgF2 layer was deposited. The deposition process is as follows:

[0165] Step 1: Substrate pretreatment: Place the ultra-white patterned glass substrate with micron-level pyramid texture (preheated to 200℃) into the PECVD chamber carrier; purge the chamber with argon (Ar) gas (flow rate 500 sccm, 5 minutes) to remove residual particles.

[0166] Step 2: Introduce the reaction gas; start the mixed gas: silane (SiH4): 20 sccm; nitrogen trifluoride (NF3): 10 sccm; argon (Ar): 200 sccm; gas volume ratio: SiH4:NF3:Ar = 1:0.5:10;

[0167] Step 3: Plasma excitation and deposition; RF power: 320W (13.56MHz, matching impedance 50Ω); Chamber pressure: 180Pa (vacuum pump speed maintained constant); Substrate temperature: 210℃ (thermocouple closed-loop temperature control ±3℃); Deposition time: 56 seconds (real-time laser interferometer monitoring, terminated at 45±5nm);

[0168] Step 4: After in-situ annealing deposition, the temperature is raised to 250°C in a nitrogen atmosphere and held for 10 minutes to eliminate film stress.

[0169] The SiO2 layer deposition process is as follows:

[0170] Step 1: Switch the reaction gas:

[0171] Turn off SiH4 / NF3, and introduce:

[0172] Silane (SiH4): 30 sccm;

[0173] Oxygen (O2): 60 sccm;

[0174] Ammonia (NH3): 9 sccm;

[0175] Gas volume ratio: SiH4:O2:NH3=1:2:0.3.

[0176] Step 2: Plasma Deposition:

[0177] RF power: 420W (pulse mode, 80% duty cycle);

[0178] Chamber pressure: 280 Pa;

[0179] Substrate temperature: 240℃ (to ensure film densification);

[0180] Deposition time: 46 seconds (optical emission spectrum monitoring of Si*288nm peak, terminated at 65±5nm).

[0181] Step 3: Post-processing:

[0182] After deposition, pure oxygen (100 sccm, 5 minutes) is introduced to fill the silicon dangling bonds;

[0183] Gradual cooling to 100℃ (rate 5℃ / min) to prevent film cracking.

[0184] The fabrication process of the infrared spectral modulation layer is as follows:

[0185] The outer spectral modulation layer was magnetron sputtered on the surface of the inner antireflection coating using a Leybold Optics SYRUSpro 710. The target material was Si3N4, Fe3O4, and CoO with a mass ratio of 95:3:2. The sputtering conditions were set as follows: DC pulse sputtering power of 400W, duty cycle of 70%, gas atmosphere of Ar and N2 mixed gas with a volume ratio of 20:1, chamber pressure of 0.5Pa, and deposition rate of 0.5nm / s.

[0186] The surface functional layer fabrication process is as follows:

[0187] A nanoporous SiO2 layer was sputtered using a Leybold Optics SYRUSpro 710 with a sputtering power of 300W, an argon flow rate of 50 sccm, and an oxygen flow rate of 10 sccm.

[0188] Annealing was performed using Leybold Optics SYRUSpro 710, held at 450°C for 30 minutes in a N2 atmosphere.

[0189] Comparative Example 1

[0190] This comparative example is a commercially available double-layer coated photovoltaic glass, manufactured by Xinyi Glass Holdings Limited.

[0191] Comparative Example 2

[0192] This comparative example provides a photovoltaic glass for BC photovoltaic module chromatic difference, with the following structure:

[0193] Patterned glass (Xinyi Solar DG-3.2): The surface has a micron-level pyramid texture with a height of 3μm and a spacing of 4μm, and a light transmittance of 92.1%.

[0194] It also includes those arranged sequentially away from the patterned glass:

[0195] Inner anti-reflective coating layer: SiO2 layer with a thickness of 65nm and a refractive index of 1.46.

[0196] Outer spectral modulation layer: 60nm thick.

[0197] Surface functional layer: a 40nm thick nanoporous SiO2 layer with a porosity of 21%, a pore size of 10nm, and a refractive index of 1.27.

[0198] This comparative example also provides a method for preparing photovoltaic glass with chromatic aberration in BC photovoltaic modules, the specific steps of which are as follows:

[0199] Substrate pretreatment: Place the ultra-white patterned glass substrate with micron-level pyramid texture (preheated to 200℃) into the PECVD chamber carrier; purge the chamber with argon (Ar) gas (flow rate 500 sccm, 5 minutes) to remove residual particles.

[0200] The SiO2 layer deposition process is as follows:

[0201] Step 1: Switch the reaction gas:

[0202] Turn off SiH4 / NF3, and introduce:

[0203] Silane (SiH4): 30 sccm;

[0204] Oxygen (O2): 60 sccm;

[0205] Ammonia (NH3): 9 sccm;

[0206] Gas volume ratio: SiH4:O2:NH3 = 1:2:0.3;

[0207] Step 2: Plasma Deposition:

[0208] RF power: 420W (pulse mode, 80% duty cycle);

[0209] Chamber pressure: 280 Pa;

[0210] Substrate temperature: 240℃ (to ensure film densification);

[0211] Deposition time: 46 seconds (optical emission spectrum monitoring of Si*288nm peak, terminated at 65±5nm).

[0212] Step 3: Post-processing:

[0213] After deposition, pure oxygen (100 sccm, 5 minutes) is introduced to fill the silicon dangling bonds;

[0214] Gradual cooling to 100℃ (rate 5℃ / min) to prevent film cracking.

[0215] The fabrication process of the infrared spectral modulation layer is as follows:

[0216] The outer spectral modulation layer was magnetron sputtered using a Leybold Optics SYRUSpro 710 on the surface of the inner antireflection coating layer. The target material was Si3N4, Fe3O4, and CoO with a mass ratio of 95:3:2. The sputtering power of the DC pulse was 400W, the duty cycle was 70%, the gas atmosphere was a mixture of Ar and N2 with a volume ratio of 20:1, the chamber pressure was 0.5Pa, and the deposition rate was 0.5nm / s.

[0217] The surface functional layer fabrication process is as follows:

[0218] A nanoporous SiO2 layer was sputtered using a Leybold Optics SYRUSpro 710 with a sputtering power of 300W, an argon flow rate of 50 sccm, and an oxygen flow rate of 10 sccm.

[0219] Annealing was performed using Leybold Optics SYRUSpro 710, held at 450°C for 30 minutes in a N2 atmosphere.

[0220] Comparative Example 3

[0221] This comparative example provides a photovoltaic glass for BC photovoltaic module chromatic difference, with the following structure:

[0222] Patterned glass (Xinyi Solar DG-3.2): The surface has a micron-level pyramid texture with a height of 13μm and a spacing of 35μm, and a light transmittance of 92.1%.

[0223] It also includes those arranged sequentially away from the patterned glass:

[0224] Inner antireflective coating layer: MgF2 layer with a thickness of 80nm and a refractive index of 1.37.

[0225] Outer spectral modulation layer: 60nm thick.

[0226] Surface functional layer: a 40nm thick nanoporous SiO2 layer with a porosity of 25%, a pore size of 10nm, and a refractive index of 1.28.

[0227] This comparative example also provides a method for preparing photovoltaic glass with chromatic aberration in BC photovoltaic modules, the specific steps of which are as follows:

[0228] After cutting the original patterned glass sheet, a micron-level pyramid texture is rolled onto the surface of the patterned glass using a patterning mold at a temperature of 690℃ and a pressure of 12MPa.

[0229] Using PlasmaPro 1000 and the PECVD method, a MgF2 layer was deposited. The deposition process is as follows:

[0230] Step 1: Substrate pretreatment: Place the ultra-white patterned glass substrate with micron-level pyramid texture (preheated to 200℃) into the PECVD chamber carrier; purge the chamber with argon (Ar) gas (flow rate 500 sccm, 5 minutes) to remove residual particles.

[0231] Step 2: Introduce the reaction gas; start the mixed gas: silane (SiH4): 20 sccm; nitrogen trifluoride (NF3): 10 sccm; argon (Ar): 200 sccm; gas volume ratio: SiH4:NF3:Ar = 1:0.5:10;

[0232] Step 3: Plasma excitation and deposition; RF power: 320W (13.56MHz, matching impedance 50Ω); Chamber pressure: 180Pa (vacuum pump speed maintained constant); Substrate temperature: 210℃ (thermocouple closed-loop temperature control ±3℃); Deposition time: 60 seconds (real-time laser interferometer monitoring, terminated at 50±5nm);

[0233] Step 4: After in-situ annealing deposition, the temperature is raised to 250°C in a nitrogen atmosphere and held for 10 minutes to eliminate film stress.

[0234] The fabrication process of the infrared spectral modulation layer is as follows:

[0235] The outer spectral modulation layer was magnetron sputtered using a Leybold Optics SYRUSpro 710 on the surface of the inner antireflection coating layer. The target material was Si3N4, Fe3O4, and CoO with a mass ratio of 95:3:2. The sputtering power of the DC pulse was 400W, the duty cycle was 70%, the gas atmosphere was a mixture of Ar and N2 with a volume ratio of 20:1, the chamber pressure was 0.5Pa, and the deposition rate was 0.5nm / s.

[0236] The surface functional layer fabrication process is as follows:

[0237] A nanoporous SiO2 layer was sputtered using a Leybold Optics SYRUSpro 710 with a sputtering power of 300W, an argon flow rate of 50 sccm, and an oxygen flow rate of 10 sccm.

[0238] Annealing was performed using Leybold Optics SYRUSpro 710, held at 450°C for 30 minutes in a N2 atmosphere.

[0239] Comparative Example 4

[0240] This comparative example provides a photovoltaic glass for BC photovoltaic module chromatic difference, with the following structure:

[0241] Patterned glass (Xinyi Solar DG-3.2): The surface has a micron-level pyramid texture with a height of 13μm and a spacing of 35μm, and a light transmittance of 92.1%.

[0242] It also includes those arranged sequentially away from the patterned glass:

[0243] Inner anti-reflective coating layer: MgF2 layer and SiO2 layer in sequence in the direction away from the patterned glass; MgF2 layer has a thickness of 50nm and a refractive index of 1.38; SiO2 layer has a thickness of 70nm and a refractive index of 1.46.

[0244] Outer spectral modulation layer: 20nm thick.

[0245] Surface functional layer: a 40nm thick nanoporous SiO2 layer with a porosity of 25%, a pore size of 10nm, and a refractive index of 1.28.

[0246] This comparative example also provides a method for preparing photovoltaic glass with chromatic aberration in BC photovoltaic modules, the specific steps of which are as follows:

[0247] After cutting the original patterned glass sheet, a micron-level pyramid texture is rolled onto the surface of the patterned glass using a patterning mold at a temperature of 690℃ and a pressure of 12MPa.

[0248] Using PlasmaPro 1000 and the PECVD method, a MgF2 layer was deposited. The deposition process is as follows:

[0249] Step 1: Substrate pretreatment: Place the ultra-white patterned glass substrate with micron-level pyramid texture (preheated to 200℃) into the PECVD chamber carrier; purge the chamber with argon (Ar) gas (flow rate 500 sccm, 5 minutes) to remove residual particles.

[0250] Step 2: Introduce the reaction gas; start the mixed gas: silane (SiH4): 20 sccm; nitrogen trifluoride (NF3): 10 sccm; argon (Ar): 200 sccm; gas volume ratio: SiH4:NF3:Ar = 1:0.5:10;

[0251] Step 3: Plasma excitation and deposition; RF power: 320W (13.56MHz, matching impedance 50Ω); Chamber pressure: 180Pa (vacuum pump speed maintained constant); Substrate temperature: 210℃ (thermocouple closed-loop temperature control ±3℃); Deposition time: 60 seconds (real-time laser interferometer monitoring, terminated at 50±5nm);

[0252] Step 4: After in-situ annealing deposition, the temperature is raised to 250°C in a nitrogen atmosphere and held for 10 minutes to eliminate film stress.

[0253] The SiO2 layer deposition process is as follows:

[0254] Step 1: Switch the reaction gas:

[0255] Turn off SiH4 / NF3, and introduce:

[0256] Silane (SiH4): 30 sccm;

[0257] Oxygen (O2): 60 sccm;

[0258] Ammonia (NH3): 9 sccm;

[0259] Gas volume ratio: SiH4:O2:NH3 = 1:2:0.3;

[0260] Step 2: Plasma Deposition:

[0261] RF power: 420W (pulse mode, 80% duty cycle);

[0262] Chamber pressure: 280 Pa;

[0263] Substrate temperature: 240℃ (to ensure film densification);

[0264] Deposition time: 50 seconds (optical emission spectrum monitoring of Si*288nm peak, terminated at 70±5nm);

[0265] Step 3: Post-processing

[0266] After deposition, pure oxygen (100 sccm, 5 minutes) is introduced to fill the silicon dangling bonds;

[0267] Gradual cooling to 100℃ (rate 5℃ / min) to prevent film cracking.

[0268] The fabrication process of the infrared spectral modulation layer is as follows:

[0269] The outer spectral modulation layer was magnetron sputtered using a Leybold Optics SYRUSpro 710 on the surface of the inner antireflection coating layer. The target material was Si3N4 and CoO with a mass ratio of 95:2. The sputtering power of the DC pulse was 400W, the duty cycle was 70%, the gas atmosphere was a mixture of Ar and N2 with a volume ratio of 20:1, the chamber pressure was 0.5Pa, and the deposition rate was 0.5nm / s.

[0270] The surface functional layer fabrication process is as follows:

[0271] A nanoporous SiO2 layer was sputtered using a Leybold Optics SYRUSpro 710 with a sputtering power of 300W, an argon flow rate of 50 sccm, and an oxygen flow rate of 10 sccm.

[0272] Annealing was performed using Leybold Optics SYRUSpro 710, held at 450°C for 30 minutes in a N2 atmosphere.

[0273] The above embodiments and comparative examples were used to package BC battery cells of the same batch, and the maximum ΔE*ab value between different battery cells was tested as follows:

[0274] ΔE*ab represents the Euclidean distance between two color points (such as a standard color and a test color) in Lab color space:

[0275] ΔE*ab=[(ΔL*) 2 +(Δa*) 2 +(Δb*) 2 ] 1 / 2 ;

[0276] ΔL*: Difference in brightness (test color L* - standard color L*);

[0277] Δa*, Δb*: Color difference (the a* and b* differences between the test color and the standard color).

[0278] L* axis (brightness): Represents the brightness of a color, ranging from 0 (pure black) to 100 (pure white).

[0279] a* axis (red-green axis): positive values ​​represent red, and negative values ​​represent green.

[0280] b* axis (yellow-blue axis): positive values ​​represent yellow, and negative values ​​represent blue.

[0281] The criteria for determining the value of ΔE*ab are shown in Table 1:

[0282] Table 1. Criteria for determining the value of ΔE*ab

[0283] ΔE*ab range Human eye perception 0-0.5 Almost no difference (difficult for professionals to detect). 0.5-1.5 Extremely minute differences (visible under strict control) 1.5-3.0 Noticeable differences (visible to ordinary observers) ＞3.0 Obvious differences (identifiable without comparison)

[0284] Table 2 shows the maximum ΔE*ab values ​​among BC solar cells of the same batch with different glass encapsulations:

[0285] Table 2. Maximum ΔE*ab values ​​among BC solar cells of the same batch with different glass packaging.

[0286]

[0287]

[0288] As shown in Table 2, after the same batch of BC batteries were packaged using Examples 1, 2, and 3, and Comparative Examples 1, 2, 3, and 4, the ΔE*ab between the battery cells in each package was tested. For Examples 1, 2, and 3, ΔE*ab < 1.5 (the color difference is extremely small), while for Comparative Examples 1, 2, 3, and 4, ΔE*ab > 3 (the color difference is clearly noticeable).

[0289] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

[0290] Furthermore, those skilled in the art will understand that although some embodiments herein include certain features included in other embodiments but not others, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the foregoing claims, any of the claimed embodiments can be used in any combination. The information disclosed in this background section is intended only to enhance the understanding of the general background of this application and should not be construed as an admission or in any way implying that such information constitutes prior art known to those skilled in the art.

Claims

1. A photovoltaic glass for reducing color difference in BC photovoltaic modules, characterized in that, It includes a substrate layer and an inner antireflective coating layer, an outer spectral modulation layer, and a surface functional layer, which are sequentially disposed in a direction away from the substrate layer.

2. The photovoltaic glass for reducing color difference in BC photovoltaic modules according to claim 1, characterized in that, The substrate layer is made of patterned glass, and the light transmittance of the patterned glass is not less than 91.5%.

3. The photovoltaic glass for reducing color difference in BC photovoltaic modules according to claim 2, characterized in that, The embossed glass surface is provided with a micron-level pyramid texture, the height of which is 5-15μm and the spacing is 20-50μm.

4. The photovoltaic glass for reducing color difference in BC photovoltaic modules according to claim 1, characterized in that, The inner antireflective coating layer comprises a MgF2 layer and a SiO2 layer sequentially disposed in the direction away from the substrate layer, and satisfies at least one of the following conditions: a. The refractive index of the MgF2 layer is 1.37-1.39, wherein, The thickness of the MgF2 layer is 40-70 nm; b. The refractive index of the SiO2 layer is 1.45-1.47, and the thickness of the SiO2 layer is 50-80 nm.

5. The photovoltaic glass for reducing color difference in BC photovoltaic modules according to claim 1, characterized in that, The outer spectral modulation layer includes Fe-doped layers. 2+ and Co 2+ SiN x Thin film, the Fe 2+ With the Co 2+ The doping molar ratio is 3-5:1, and the doping concentration is not higher than that of the SiN. x 0.5 wt% of the total film mass.

6. The photovoltaic glass for reducing color difference in BC photovoltaic modules according to claim 1, characterized in that, The surface functional layer includes a nanoporous SiO2 layer with nanopores having a pore size of 5-20 nm, a porosity of 23-27%, and a refractive index of 1.18-1.

38.

7. The photovoltaic glass for reducing color difference in BC photovoltaic modules according to any one of claims 1-6, characterized in that, At least one of the following conditions must be met: c. The thickness of the substrate layer is 3.1-3.3 mm; d. The thickness of the inner antireflective coating is 80-130 nm; e. The thickness of the outer spectral modulation layer is 50-80 nm; f. The thickness of the surface functional layer is 30-50 nm.

8. A method for preparing photovoltaic glass for reducing color difference in BC photovoltaic modules according to any one of claims 1-7, characterized in that, include: After cutting the patterned glass sheet, the micron-level pyramid texture described above is applied to the surface; An anti-reflective coating is applied to the inner layer of the patterned glass surface. An outer spectral modulation layer is disposed on the surface of the inner antireflective coating layer; a surface functional layer is disposed on the surface of the outer spectral modulation layer; and the photovoltaic glass that reduces the color difference of the BC photovoltaic module is obtained after annealing.

9. The preparation method according to claim 8, characterized in that, At least one of the following conditions must be met: A. The embossed texture of the substrate layer is prepared by a hot pressing process, with a mold temperature of 680-720℃ and a pressure of 10-15MPa. B. The inner antireflective coating layer comprises a MgF2 layer and a SiO2 layer sequentially disposed thereon; The deposition conditions for the MgF2 layer were as follows: a mixed gas atmosphere of SiH4, NF3, and Ar with a volume ratio of 1:0.5:10, a deposition temperature of 200-220℃, a chamber pressure of 150-200Pa, a radio frequency power of 300-350W, and a deposition rate of 0.8-1.0nm / s. The deposition conditions for the SiO2 layer are as follows: a mixed gas atmosphere of SiH4, O2, and NH3 with a volume ratio of 1:2:0.3, a deposition temperature of 230-250℃, a chamber pressure of 250-300Pa, a radio frequency power of 400-450W, and a deposition rate of 1.2-1.5nm / s. C. The outer spectral modulation layer is set by reactive magnetron sputtering. The target material composition is Si3N4, Fe3O4, and CoO, with a mass ratio of 95-97:2-3:1-2. The sputtering power of the DC pulse is 380-420W, the duty cycle is 70%, the gas atmosphere is a mixture of Ar and N2 with a volume ratio of 20:1, the chamber pressure is 0.45-0.55Pa, and the deposition rate is 0.45-0.55nm / s. D. The conditions for sputtering to prepare the surface functional layer are: sputtering power of 280-330W, argon flow rate of 45-55sccm, and oxygen flow rate of 8-15sccm; E. The annealing conditions are: N2 atmosphere, annealing temperature of 400-500℃, and annealing time of 28-40min.

10. A photovoltaic module, characterized in that, The photovoltaic glass for reducing color difference in BC photovoltaic modules as described in any one of claims 1-7.

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