Transparent electrode pixel detector and method of manufacture

Abstract

The application discloses a transparent electrode pixel detector and a preparation method, relates to the technical field of photoelectric detection, and comprises a substrate layer, an epitaxial wafer and a transparent electrode assembly comprising a first electrode array, a second electrode array, an interdigital electrode, a dielectric layer and a cross-connection conductor. The method comprises the following steps: epitaxially growing and etching the epitaxial wafer on the substrate layer in sequence, growing a heavy boron doped diamond and etching a main structure of the transparent electrode assembly, depositing silicon oxide, etching and annealing to form the dielectric layer, and finally preparing the cross-connection conductor connected with the breakpoint. The application can use the heavy boron doped diamond as the transparent electrode, avoid the shielding of incident light to increase the effective photosensitive area, and use the high-resistance nitrogen-doped substrate to completely isolate the adjacent pixel signal crosstalk, greatly improve the detection sensitivity and support the pixel miniaturization, and meet the high-resolution imaging requirement.

Description

Technical Field

[0001] This invention relates to the field of photoelectric detection technology, and in particular to a transparent electrode pixel detector and its fabrication method. Background Technology

[0002] The solar-blind ultraviolet band (200-280nm) is almost absent in the solar spectrum at the Earth's surface due to strong absorption by the ozone layer, forming a natural "dark background." This characteristic gives it extremely low noise interference and false alarm rate when detecting weak ultraviolet signals. This band is widely used for monitoring non-natural hazard signals, such as gunfire, explosives, flames, and corona discharge from high-voltage transmission lines; it also covers the detection of abnormal meteorological events, such as strong lightning. Therefore, solar-blind ultraviolet imaging technology has important application value in military early warning, industrial safety, environmental monitoring, and public safety. Diamond, with its excellent physicochemical properties (wide bandgap, high thermal conductivity, strong radiation resistance, and high resistivity), is considered an ideal semiconductor material for solar-blind ultraviolet detectors. To achieve ultraviolet imaging capabilities, diamond detectors must be integrated into pixel arrays. The key to improving imaging resolution lies in reducing the pixel unit size while maintaining excellent detection sensitivity and signal-to-noise ratio.

[0003] Currently, the fabrication of diamond pixel detectors mainly relies on metal electrodes or three-dimensional graphite electrodes, both of which have significant limitations. Three-dimensional graphite electrodes enhance pixel sensitivity by increasing the electric field distribution, thus allowing for a certain degree of reduction in the active area; however, their fabrication process is complex, and the electrode structure is large, making it difficult to achieve high-density pixel integration. While metal electrodes can be finely patterned through microfabrication techniques, which is beneficial for high-pixel array fabrication, their opaque nature blocks some incident ultraviolet light, leading to a reduction in the effective photosensitive area. Due to the inherently limited responsivity of diamond materials, an excessively small active area significantly weakens the ability to detect weak signals; therefore, the metal electrode approach faces a bottleneck in further reducing pixel size. Furthermore, as the pixel area shrinks, the distance between adjacent collecting electrodes shortens, causing signal crosstalk between different pixel units and affecting resolution.

[0004] In summary, existing electrode structures struggle to balance high pixel density and high detection performance, hindering the development of diamond solar-blind ultraviolet imaging devices towards higher resolution and better sensitivity. Therefore, there is an urgent need to develop a novel electrode scheme that can improve device responsivity and support further pixel miniaturization without sacrificing optical collection efficiency, while also avoiding signal crosstalk between adjacent pixel units. This would advance diamond solar-blind ultraviolet detectors towards high-performance imaging applications. Summary of the Invention

[0005] Therefore, the technical problem to be solved by the present invention is that existing metal or graphite electrodes are difficult to balance high density and high detection performance. They not only block deep ultraviolet light and reduce the photosensitive area, but also reduce the number of pixels, which weakens the detection capability and causes signal crosstalk, thus restricting high-resolution imaging.

[0006] The above-mentioned technical problems are solved by the following technical solutions: A transparent electrode pixel detector includes a substrate, an epitaxial wafer, and a transparent electrode assembly comprising a first electrode array, a second electrode array, interdigitated electrodes, a dielectric layer, and a bridging conductor.

[0007] In a preferred embodiment of the transparent electrode pixel detector of the present invention: an epitaxial wafer is disposed on a substrate layer, the epitaxial wafer has photoelectric conversion characteristics in the solar-blind ultraviolet band, and multiple epitaxial wafers are electrically isolated from each other; A transparent electrode assembly is disposed on the substrate and the top of the epitaxial wafer, and is electrically connected to the epitaxial wafer; The transparent electrode assembly includes a first electrode array and a second electrode array arranged in a cross pattern, with a dielectric layer and a bridging conductor at the intersection. The transparent electrode assembly further includes interdigitated electrodes, with each pair of interdigitated electrodes being disposed on an epitaxial wafer insulated from each other. One interdigitated electrode on the epitaxial wafer is connected to the first electrode array, and the other interdigitated electrode is connected to the second electrode array. The transparent electrode assembly has solar-blind ultraviolet light transmission characteristics.

[0008] In a preferred embodiment of the transparent electrode pixel detector of the present invention: the substrate layer is nitrogen-doped single-crystal diamond, and the nitrogen impurity concentration is not less than... The surface roughness is less than 10 nm.

[0009] In a preferred embodiment of the transparent electrode pixel detector of the present invention: the material of the epitaxial wafer is intrinsic diamond, the thickness of the epitaxial wafer is 100-5000 nm, and the impurity content is less than 10 ppb.

[0010] In a preferred embodiment of the transparent electrode pixel detector of the present invention: the plurality of epitaxial wafers are obtained by plasma etching of an intrinsic diamond epitaxial layer, the etching depth being greater than the thickness of the epitaxial wafer, and the pixel unit area corresponding to a single epitaxial wafer is not greater than [missing information]. .

[0011] In a preferred embodiment of the transparent electrode pixel detector of the present invention: the first electrode array, the second electrode array, and the interdigitated electrodes are made of boron-doped diamond, with a boron impurity concentration of not less than [missing information]. The thickness is 10-100nm; The transparent electrode assembly also includes lead points disposed at both ends of the first electrode array and the second electrode array, and the material of the lead points is also boron-doped diamond.

[0012] In a preferred embodiment of the transparent electrode pixel detector of the present invention: the first electrode array, the second electrode array, the lead point and the interdigitated electrode are obtained by plasma etching of boron-doped diamond, the etching depth is greater than the thickness of boron-doped diamond, and penetrates into the epitaxial wafer by 10-20 nm. The electrode strip width of the first and second electrode arrays is 5-50 μm, and the area of ​​the lead point is not less than... The width of the interdigitated electrodes is 1-10 μm, the spacing is 0.5-5 μm, and the photosensitive area of ​​the interdigitated electrodes does not exceed the corresponding epitaxial wafer area.

[0013] In a preferred embodiment of the transparent electrode pixel detector of the present invention: the length of the breakpoint at the intersection is a reference, the length of the dielectric layer is 1.5-3 times the length of the breakpoint, the width is 1.5-3 times the width of the electrode strip, the thickness is 150-300nm, and it is centrally located, and the dielectric layer material is silicon oxide.

[0014] In a preferred embodiment of the transparent electrode pixel detector of the present invention: the length of the bridging conductor is 1.5-2 times the length of the dielectric layer, and the width is 0.5-0.9 times the width of the electrode strip; the material of the bridging conductor includes one or more of Ti, W, Zr, and Au, and the thickness is 20-200 nm.

[0015] A method for fabricating a transparent electrode pixel detector includes growing an intrinsic diamond epitaxial layer on a substrate using MPCVD technology, and after passing through a photoresist mask, etching away the exposed intrinsic diamond epitaxial layer with plasma to form multiple electrically isolated epitaxial wafers. A layer of boron-doped diamond is grown on the sample surface using MPCVD technology. After the surface is treated with ultraviolet ozone, a photoresist mask is formed by photolithography. The exposed boron-doped diamond is etched away by plasma. A first electrode array, a second electrode array with breakpoints, and lead points are formed on the substrate surface. Interdigitated electrodes are formed on the epitaxial wafer. A layer of silicon oxide is deposited on the sample surface using PECVD. A photoresist mask is formed at the breakpoint using photolithography. The exposed silicon oxide is then etched clean with hydrofluoric acid and annealed in an oxygen atmosphere to form a dielectric layer. Using photolithography, sputtering, and lift-off processes, a bridging conductor is formed on the surface of the second electrode array at both ends of the dielectric layer and the breakpoint.

[0016] In a preferred embodiment of the transparent electrode pixel detector fabrication method of the present invention: the growth pressure of the intrinsic diamond epitaxial layer is 90-120 Torr, the methane flow rate is 5-20 sccm, the hydrogen flow rate is 400-500 sccm, and the temperature is 1000-1100℃. The growth pressure of the boron-doped diamond layer is 100-130 Torr, the hydrogen flow rate is 400-500 sccm, the methane flow rate is 2-10 sccm, the boron-to-carbon ratio is not less than 600 ppm, and the growth temperature is 850-1100℃. The annealing temperature is 300-600℃, and the time is 5-20 minutes.

[0017] The beneficial effects of this invention are as follows: by setting boron-doped diamond as a transparent electrode component and using nitrogen-doped single-crystal diamond with high resistivity and no response to deep ultraviolet light as a substrate layer, and at the same time using oxygen atmosphere annealing to passivate etching defects, the signal crosstalk between adjacent pixels is completely cut off without blocking incident light and increasing the effective photosensitive area, which greatly improves the sensitivity of the detector and supports further miniaturization of pixel size to meet the requirements of high-resolution solar-blind ultraviolet imaging. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings of the embodiments of the present invention will be briefly described below. Obviously, the drawings described below only relate to some embodiments of the present invention and are not intended to limit the present invention.

[0019] Figure 1 A schematic planar view of a transparent electrode pixel detector provided as an embodiment of the present invention; Figure 2 A cross-sectional view of the intersection of the horizontal and vertical electrodes of a transparent electrode pixel detector provided in one embodiment of the present invention; Figure 3 A pixel unit cross-sectional view of a transparent electrode pixel detector provided in one embodiment of the present invention; Figure 4 A deep ultraviolet imaging effect diagram of a transparent electrode pixel detector provided as an embodiment of the present invention; Figure 5 A flowchart illustrating a method for fabricating a transparent electrode pixel detector according to an embodiment of the present invention. Detailed Implementation

[0020] To enable those skilled in the art to better understand the present invention, the present invention will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0021] The terminology used in this invention is that which is currently widely used in the art in consideration of the function of the invention; however, these terms may vary according to the intent of those skilled in the art, precedent, or new technology in the art. Furthermore, specific terms may be chosen by the applicant, and in such cases, their detailed meanings will be described in the detailed description of the invention. Therefore, the terms used in this specification should not be construed as simple names, but rather based on their meanings and the overall description of the invention.

[0022] This embodiment provides a transparent electrode pixel detector, including: Substrate 1 is made of CVD-synthesized single-crystal diamond containing nitrogen impurities, with a nitrogen impurity concentration of [missing value]. ; Epitaxial wafer 2 is disposed on substrate 1, and is made of intrinsic diamond with a thickness of 500 nm. The pixel unit array, composed of multiple epitaxial wafers 2, is electrically isolated from each other, and the unit area is... ; Transparent electrode assembly 3 is disposed on top of substrate 1 and epitaxial wafer 2, and is made of a material with a thickness of 50 nm and a doping concentration of [missing information]. Boron-doped diamond; The transparent electrode assembly 3 includes a first electrode array 301 and a second electrode array 302 arranged in a cross pattern, both of which have an electrode strip width of 10 μm, and lead points 304 at both ends, with a size of 100 μm × 100 μm. The epitaxial wafer 2 is provided with interdigitated electrodes 303, which are 2μm wide, 2μm apart, and have 4 interdigitated fingers; Dielectric layer 4 is disposed at the breakpoint at the intersection of the first electrode array 301 and the second electrode array 302, with a breakpoint length of 20μm. The dielectric layer 4 is made of silicon oxide, with a thickness of 200 nm and a size of 30 μm × 15 μm. A bridging conductor 5 is disposed on the dielectric layer 4 to connect the breakpoint. It is made of Ti and has a length of 40 μm and a width of 9 μm.

[0023] like Figures 1 to 3 As shown, this reveals the specific spatial distribution and hierarchical relationship of the transparent electrode pixel detector. Combined with... Figure 1 A planar schematic diagram shows that the first electrode array 301 and the second electrode array 302 of the transparent electrode assembly 3 are arranged in a grid, with the epitaxial film 2 located within the grid as an independent photosensitive island, and interdigitated electrodes 303 positioned above it. Combined with... Figure 2 A cross-sectional view of the intersection point shows that at the intersection of the first electrode array 301 and the second electrode array 302, the dielectric layer 4 covers the first electrode array 301, and the bridging conductor 5 crosses the dielectric layer 4 to connect the disconnected second electrode array 302. Combined with... Figure 3 The pixel unit cross-sectional view shows that the epitaxial wafer 2 is isolated on the substrate layer 1, and the substrate layer 1 is exposed between adjacent epitaxial wafers 2 to form a physical isolation space. The interdigitated electrode 303 is attached to the top surface of the epitaxial wafer 2.

[0024] In one optional embodiment, a transparent electrode pixel detector includes: a substrate layer 1, made of nitrogen-doped single-crystal diamond, with a nitrogen impurity concentration of [missing information]. Surface roughness is less than 10 nm; Epitaxial wafer 2 is disposed on substrate layer 1, and is made of intrinsic diamond with a thickness of 1000 nm; The area of ​​the pixel unit corresponding to epitaxial film 2 is ; Transparent electrode assembly 3, made of a material with a thickness of 80 nm and a doping concentration of [missing information]. Boron-doped diamond; The electrode strip width of the first electrode array 301 and the second electrode array 302 is 15 μm; The area of ​​the lead point 304 is not less than ; The interdigitated electrodes 303 have a width of 1.5 μm and a spacing of 1.5 μm; Dielectric layer 4 is disposed at the intersection, and is made of silicon oxide with a thickness of 250 nm and a size of 40 μm × 20 μm. The bridging conductor 5 is made of W, with a thickness of 100 nm, a length of 50 μm, and a width of 12 μm.

[0025] Furthermore, combined Figure 5 The flowchart shown illustrates a method for fabricating a transparent electrode pixel detector, comprising the following steps: S1: The substrate selected is synthesized by CVD with a nitrogen doping concentration of [missing information]. A single-crystal diamond intrinsic diamond epitaxial layer 2 with a thickness of 500 nm was grown on a single-crystal diamond substrate 1 using MPCVD technology. The growth pressure was 100 Torr, the methane flow rate was 15 sccm, the hydrogen flow rate was 500 sccm, and the temperature was 1000℃. A 25×25 20μm×20μm photoresist mask pattern array was formed using photolithography. Then, a 520nm thick diamond layer was etched away using oxygen plasma. After resist removal, a diamond pixel unit array was formed, with a unit area of ​​[missing information]. ; S2: A 50nm thick layer with a doping concentration of [missing information] was grown on the sample surface using MPCVD technology. The boron-doped diamond was grown at a pressure of 100 Torr, a hydrogen flow rate of 500 sccm, a methane flow rate of 5 sccm, a boron-to-carbon ratio of 800 ppm, and a growth temperature of 950℃. After treating the surface with ultraviolet ozone, a photoresist mask pattern is formed using photolithography. Then, the 60nm thick boron-doped diamond is etched away with oxygen plasma. After removing the photoresist, a vertical electrode array 301, lead points 304, and a horizontal electrode array 302 with breakpoints are formed on the surface of the single crystal diamond substrate 1. Interdigitated electrodes 303 are formed on the intrinsic diamond epitaxial layer 2 of the pixel unit. Among them, the vertical electrode array 301 and the horizontal electrode array 302 are 10μm wide, the lead point 304 is 100μm×100μm in size, the break length of the horizontal electrode array 302 is 20μm, and the interdigitated electrode 303 is 2μm wide, 2μm apart, and has 4 interdigitated fingers. S3: A 200nm thick silicon oxide layer is deposited on the sample surface using PECVD. A 30μm×15μm rectangular photoresist mask is formed at the breakpoint using photolithography. Then, the exposed silicon oxide is etched clean with hydrofluoric acid and annealed at 600℃ for 5min in an oxygen atmosphere to form dielectric layer 4. S4: Using photolithography, sputtering, and lift-off processes, short metal lines 5 are formed on the surface of the dielectric layer 4 and the horizontal electrode array 302 at both ends of the breakpoint. The material is Ti, and the length is 40μm and the width is 9μm. Combination Figure 4 The deep ultraviolet imaging effect shown in the figure demonstrates that the diamond pixel detector fabricated in this embodiment, consisting of a diamond planar array of 625 pixel units, can clearly display the photocurrent imaging pattern of the letter "H" under 222nm deep ultraviolet irradiation. This directly verifies that the use of a high-resistivity nitrogen-doped substrate layer 1 combined with a completely disconnected epitaxial wafer 2 structure successfully isolates signal crosstalk between adjacent pixels, achieving high-resolution imaging.

[0026] In another embodiment, a method for fabricating a transparent electrode pixel detector is provided, comprising the following steps: S1: The substrate is nitrogen-doped single-crystal diamond, with a nitrogen doping concentration of [missing value]. ; An intrinsic diamond epitaxial layer 2 with a thickness of 1000 nm was grown on a single-crystal diamond substrate 1 using MPCVD technology. The growth pressure was 110 Torr, the methane flow rate was 10 sccm, the hydrogen flow rate was 450 sccm, and the temperature was 1050℃. A photoresist mask pattern array is formed using photolithography. A 1015nm thick diamond layer is then etched away using Cl plasma. After resist removal, a diamond pixel unit array is formed, with a unit area of ​​[missing information]. ; S2: A layer with a thickness of 80 nm and a doping concentration of [missing information] was grown on the sample surface using MPCVD technology. The boron-doped diamond was grown at a pressure of 120 Torr, a hydrogen flow rate of 450 sccm, a methane flow rate of 8 sccm, a boron-to-carbon ratio of 1000 ppm, and a growth temperature of 1000℃. After ultraviolet ozone treatment of the surface, a mask pattern is formed by photolithography. The 95nm thick boron-doped diamond is etched away with Cl plasma. After removing the resist, a vertical electrode array 301, a lead point 304 and a horizontal electrode array 302 with breakpoints are formed on the surface of the single crystal diamond substrate 1. Interdigitated electrodes 303 are formed on the intrinsic diamond epitaxial layer 2. The vertical electrode array 301 and the horizontal electrode array 302 have a width of 15 μm, and the lead point 304 has an area of ​​not less than [amount missing]. The horizontal electrode array 302 has a breakpoint length of 25 μm, and the interdigitated electrodes 303 have a width of 1.5 μm and a spacing of 1.5 μm. S3: A 250nm thick silicon oxide layer was deposited on the sample surface using PECVD. A 40μm×20μm rectangular mask was formed at the breakpoint by photolithography. The exposed silicon oxide was etched with hydrofluoric acid and annealed at 400℃ for 10min in an oxygen atmosphere to form dielectric layer 4. S4: Using photolithography, sputtering, and lift-off processes, short metal lines 5 are formed on the surfaces of dielectric layer 4 and both ends of the breakpoint. The material is W, the thickness is 100nm, the length is 50μm, and the width is 12μm.

[0027] In another alternative embodiment, a method for fabricating a transparent electrode pixel detector is provided, comprising the following steps: S1: The substrate is nitrogen-doped single-crystal diamond, with a nitrogen doping concentration of [missing value]. ; An intrinsic diamond epitaxial layer 2 with a thickness of 2000 nm was grown on a single-crystal diamond substrate 1 using MPCVD technology. The growth pressure was 120 Torr, the methane flow rate was 20 sccm, the hydrogen flow rate was 400 sccm, and the temperature was 1100℃. After photolithography, 2020nm thick diamond is etched away using Ar plasma to form a diamond pixel array with a unit area of ​​[missing information]. ; S2: A 100nm thick layer with a doping concentration of [missing information] was grown on the sample surface using MPCVD technology. The boron-doped diamond was grown at a pressure of 130 Torr, a hydrogen flow rate of 400 sccm, a methane flow rate of 10 sccm, a boron-to-carbon ratio of 1200 ppm, and a growth temperature of 1100℃. After the surface is treated with ultraviolet ozone and photolithography mask is applied, 120nm thick heavy boron doped diamond is etched away with Ar plasma to form a vertical electrode array 301, lead points 304, a horizontal electrode array 302 with breakpoints, and interdigitated electrodes 303. The width of the electrode strips in the vertical electrode array 301 and the horizontal electrode array 302 is 20 μm, the break length of the horizontal electrode array 302 is 30 μm, and the interdigitated electrodes 303 are 3 μm wide and 3 μm apart. S3: A 300nm thick silicon oxide layer is deposited using PECVD, photolithography is performed, and a 50μm×25μm mask is formed at the breakpoint. After being etched with hydrofluoric acid, it is annealed at 300℃ for 20min in an oxygen atmosphere to form dielectric layer 4. S4: Using photolithography, sputtering, and lift-off processes, short metal lines 5 are formed at the corresponding positions. The material is Au, with a thickness of 200nm, a length of 60μm, and a width of 15μm.

[0028] Finally, it should be noted that the preparation methods and equipment described in detail above are merely embodiments, and those skilled in the art can modify these embodiments in different ways as long as they do not depart from the scope of the present invention.

Claims

1. A transparent electrode pixel detector, characterized in that: include, An epitaxial wafer (2) is disposed on a substrate layer (1). The epitaxial wafer (2) has photoelectric conversion characteristics in the solar blind ultraviolet band, and multiple epitaxial wafers (2) are electrically isolated from each other. A transparent electrode assembly (3) is disposed on top of the substrate layer (1) and the epitaxial wafer (2) and is electrically connected to the epitaxial wafer (2); The transparent electrode assembly (3) includes a first electrode array (301) and a second electrode array (302) arranged in a cross pattern, with a dielectric layer (4) and a bridging conductor (5) provided at the intersection. The transparent electrode assembly (3) further includes interdigitated electrodes (303), each pair of interdigitated electrodes (303) being disposed on an epitaxial wafer (2) insulated from each other. One interdigitated electrode (303) on the epitaxial wafer (2) is connected to the first electrode array (301), and the other interdigitated electrode (303) is connected to the second electrode array (302). The transparent electrode assembly (3) has solar blind ultraviolet light transmission characteristics.

2. The transparent electrode pixel detector as described in claim 1, characterized in that: The substrate layer (1) is nitrogen-doped single-crystal diamond, and the nitrogen impurity concentration is not less than [missing information]. The surface roughness is less than 10 nm.

3. The transparent electrode pixel detector as described in claim 1, characterized in that: The material of the epitaxial wafer (2) is intrinsic diamond, the thickness of the epitaxial wafer (2) is 100-5000 nm, and the impurity content is less than 10 ppb.

4. The transparent electrode pixel detector as described in claim 1, characterized in that: Multiple epitaxial wafers (2) are obtained by plasma etching of intrinsic diamond epitaxial layers, with an etching depth greater than the thickness of the epitaxial wafers (2), and the pixel unit area corresponding to a single epitaxial wafer (2) is not greater than [missing information]. .

5. The transparent electrode pixel detector as described in claim 1, characterized in that: The first electrode array (301), the second electrode array (302), and the interdigitated electrode (303) are made of boron-doped diamond with a boron impurity concentration of not less than [missing information]. The thickness is 10-100nm; The transparent electrode assembly (3) also includes lead points (304) disposed at both ends of the first electrode array (301) and the second electrode array (302), and the material of the lead points (304) is also boron-doped diamond.

6. The transparent electrode pixel detector as described in claim 5, characterized in that: The first electrode array (301), the second electrode array (302), the interdigitated electrode (303) and the lead point (304) are obtained by plasma etching of boron-doped diamond, with an etching depth greater than the thickness of boron-doped diamond and penetrating 10-20 nm into the epitaxial wafer (2); The electrode strip width of the first electrode array (301) and the second electrode array (302) is 5-50 μm, and the area of ​​the lead point (304) is not less than The width of the interdigitated electrode (303) is 1-10 μm and the spacing is 0.5-5 μm. The photosensitive area of ​​the interdigitated electrode (303) does not exceed the corresponding epitaxial wafer (2) area.

7. The transparent electrode pixel detector as described in claim 1, characterized in that: Based on the length of the break at the intersection, the length of the dielectric layer (4) is 1.5-3 times the length of the break, the width is 1.5-3 times the width of the electrode strip, the thickness is 150-300nm, and it is centrally located. The material of the dielectric layer (4) is silicon oxide.

8. The transparent electrode pixel detector as described in claim 7, characterized in that: The length of the bridging conductor (5) is 1.5-2 times the length of the dielectric layer (4), and the width is 0.5-0.9 times the width of the electrode strip; the material of the bridging conductor (5) includes one or more of Ti, W, Zr, and Au, and the thickness is 20-200 nm.

9. A method for fabricating a transparent electrode pixel detector as described in any one of claims 1-8, characterized in that, include: An intrinsic diamond epitaxial layer is grown on a substrate (1) using MPCVD technology. After passing through a photoresist mask, the exposed intrinsic diamond epitaxial layer is etched away by plasma to form multiple electrically isolated epitaxial wafers (2). A layer of boron-doped diamond is grown on the sample surface using MPCVD technology. After the surface is treated with ultraviolet ozone, a photoresist mask is formed by photolithography. The exposed boron-doped diamond is etched away by plasma. A first electrode array (301), a second electrode array with breakpoints (302), and lead points (304) are formed on the surface of the substrate layer (1). Interdigitated electrodes (303) are formed on the epitaxial wafer (2). A layer of silicon oxide was deposited on the sample surface using PECVD. A photoresist mask was formed at the breakpoint using photolithography. The exposed silicon oxide was then etched clean with hydrofluoric acid and annealed in an oxygen atmosphere to form a dielectric layer (4). Using photolithography, sputtering, and stripping processes, a bridging conductor (5) is formed on the surface of the dielectric layer (4) and the second electrode array (302) at both ends of the break.

10. The method for fabricating a transparent electrode pixel detector as described in claim 9, characterized in that: The intrinsic diamond epitaxial layer is grown under a pressure of 90-120 Torr, a methane flow rate of 5-20 sccm, a hydrogen flow rate of 400-500 sccm, and a temperature of 1000-1100℃. The growth pressure of the boron-doped diamond layer is 100-130 Torr, the hydrogen flow rate is 400-500 sccm, the methane flow rate is 2-10 sccm, the boron-to-carbon ratio is not less than 600 ppm, and the growth temperature is 850-1100℃. The annealing temperature is 300-600℃, and the time is 5-20 minutes.

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