TOPCon cell with low breakage rate and preparation method thereof

Abstract

The application provides a TOPCon cell with low blistering rate and a preparation method thereof, and relates to the field of photovoltaics. The preparation method comprises the following steps: performing plasma cleaning on a silicon substrate under a mixed atmosphere of argon and oxygen to obtain a cleaned silicon substrate; setting a passivation layer on the surface of the cleaned silicon substrate by plasma treatment under a mixed atmosphere of ozone and NF3; alternately introducing trimethylaluminum and ozone, and setting an aluminum oxide layer on the surface of the passivation layer by an ALD process; and performing annealing to prepare the TOPCon cell with low blistering rate. In the process of plasma treatment, the ozone is introduced to activate the hydroxyl groups on the surface of the silicon substrate, form chemical bonding sites Si-O bonds, and reduce the adsorption and diffusion paths of hydrogen atoms in the subsequent deposition; and the NF3 is also introduced to react with silicon atoms to generate SiF x The protective layer blocks the hydrogen escape path and inhibits the generation of gaseous byproducts.

Description

Technical Field

[0001] This application relates to the photovoltaic field, and more particularly to a TOPCon cell with low burst film rate and its preparation method. Background Technology

[0002] During the high-temperature sintering process, the alumina film on the back of the TOPCon battery is prone to generating micron-sized bubbles due to residual hydrogen gas, a phenomenon known as film bursting. This phenomenon leads to decreased battery efficiency and reliability issues. In existing technologies, the deposition of alumina films mostly employs the ALD process, but this process has the following drawbacks: 1. Hydrogen residue problem: After the precursor trimethylaluminum decomposes, the residual hydrogen atoms form hydrogen gas at high temperature, which causes film blistering. 2. Insufficient control of the wrap-around plating process; the wrap-around plating range in the traditional process where water vapor and ozone are deposited alternately still needs to be optimized. 3. Poor process compatibility: Existing passivation layer structures with tunneling silicon oxide / polysilicon stacks are prone to reacting with metal pastes during high-temperature processes, leading to the risk of burn-through. Summary of the Invention

[0003] The purpose of this application is to provide a TOPCon battery with low bursting rate and a method for preparing the same, in order to solve the above-mentioned problems.

[0004] To achieve the above objectives, the first aspect of this application provides a method for preparing a TOPCon battery with a low bursting rate, comprising: The silicon substrate was plasma cleaned in a mixed atmosphere of argon and oxygen to obtain a cleaned silicon substrate. In a mixed atmosphere of ozone and NF3, a passivation layer is formed on the surface of the cleaned silicon substrate by plasma treatment. Trimethylaluminum and ozone are alternately introduced, and an aluminum oxide layer is formed on the surface of the passivation layer using the ALD process. Annealing was performed to prepare a TOPCon battery with a low bursting rate.

[0005] Optionally, the power of the plasma cleaning is 100-300W.

[0006] Optionally, the volume ratio of argon to oxygen is 1:3-5.

[0007] Optionally, in the mixed atmosphere of ozone and NF3, the concentration of ozone is 500ppm-800ppm and the concentration of NF3 is 10ppm-50ppm.

[0008] Optionally, the plasma treatment time is 30s-60s, and the temperature is 190℃-230℃.

[0009] Optionally, the method for preparing the TOPCon battery with low bursting rate satisfies at least one of the following conditions: A. When trimethylaluminum and ozone are alternately introduced, the pulse duration of trimethylaluminum is 0.1s-0.3s; the pulse duration of ozone is 0.2s-0.5s. B. When setting the alumina layer, the flow rate of the trimethylaluminum is 100 sccm-120 sccm, and the flow rate of the ozone is 500 sccm-700 sccm; C. Set the reaction temperature of the alumina layer to 120-150℃.

[0010] Optionally, the method for preparing the TOPCon battery with low bursting rate satisfies at least one of the following conditions: A. Hydrogen gas is also introduced during the ALD process; B. During the ALD process, water vapor is also introduced, and the ratio of water vapor to ozone is 1:0.5-2.

[0011] Optionally, the annealing includes a first annealing and a second annealing performed sequentially: The temperature of the first annealing is 300℃-400℃, and the time is 5min-15min; The second annealing temperature is 550℃-650℃, and the time is 20s-40s.

[0012] The second aspect of this application provides a TOPCon battery with low bursting rate, which is prepared by the method for preparing a TOPCon battery with low bursting rate.

[0013] Optionally, the TOPCon battery with low bursting rate satisfies at least one of the following conditions: A. The thickness of the passivation layer is 0.5nm-3nm; B. The thickness of the alumina layer is 4nm-6nm.

[0014] Compared with the prior art, the beneficial effects of this application include: The method for preparing a low-explosion-film-rate TOPCon battery provided in this application involves activating hydroxyl groups on the surface of a silicon substrate by introducing ozone during plasma treatment, forming Si-O bonds at chemical bonding sites, thereby reducing the adsorption and diffusion paths of hydrogen atoms in subsequent deposition; and also introducing NF3 to react with silicon atoms to generate SiF. x A protective layer blocks the escape path of hydrogen and inhibits the formation of gaseous byproducts.

[0015] The TOPCon battery with low bursting rate provided in this application can significantly reduce film defects caused by hydrogen diffusion during high-temperature sintering. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation on the scope of this application.

[0017] Figure 1 A physical image of the TOPCon battery with low bursting rate provided in Example 1. Detailed Implementation

[0018] As used in this article: "Prepared from" is synonymous with "comprising". The terms "comprising", "including", "having", "containing", or any other variations thereof as used herein are intended to cover non-exclusive inclusion. For example, a composition, step, method, article, or apparatus that includes the listed elements is not necessarily limited to those elements, but may include other elements not expressly listed or elements inherent to such composition, step, method, article, or apparatus.

[0019] The conjunction "composed of..." excludes any unspecified elements, steps, or components. If used in a claim, this phrase makes the claim closed, excluding materials other than those described, except for associated conventional impurities. When the phrase "composed of..." appears in a clause of the body of a claim rather than immediately following it, it limits only the elements described in that clause; other elements are not excluded from the claim as a whole.

[0020] When a quantity, concentration, or other value or parameter is expressed as a range, a preferred range, or a range defined by a series of upper and lower preferred values, this should be understood as specifically disclosing all ranges formed by any pair of any upper or preferred value with any lower or preferred value, regardless of whether the range is disclosed individually. For example, when the range “1–5” is disclosed, the described range should be interpreted as including ranges “1–4”, “1–3”, “1–2”, “1–2 and 4–5”, “1–3 and 5”, etc. When numerical ranges are described herein, unless otherwise stated, the range is intended to include its endpoints and all integers and fractions within that range.

[0021] In these embodiments, unless otherwise specified, the portions and percentages are all by weight.

[0022] "Parts by mass" refers to the basic unit of measurement that expresses the mass ratio of multiple components. One part can represent any unit mass, such as 1g or 2.689g. If we say that component A has "a" parts by mass and component B has "b" parts by mass, it means the ratio of the mass of component A to the mass of component B is a:b. Alternatively, it can mean that the mass of component A is aK and the mass of component B is bK (where K is any number representing a multiplier). It is important to understand that, unlike parts by mass, the sum of the mass parts of all components is not limited to 100 parts.

[0023] "And / or" is used to indicate that one or both of the described situations may occur, for example, A and / or B includes (A and B) and (A or B).

[0024] The first aspect of this application provides a method for preparing a TOPCon battery with a low bursting rate, comprising: The silicon substrate was plasma cleaned in a mixed atmosphere of argon and oxygen to obtain a cleaned silicon substrate. It should be noted that plasma cleaning can remove surface organic matter and oxides, reducing defects at the deposition interface; In a mixed atmosphere of ozone and NF3, a passivation layer is formed on the surface of the cleaned silicon substrate by plasma treatment. It is important to note that the synergistic effect of ozone and NF3 leads to the formation of Si-O and SiF. x The passivation layer inhibits hydrogen adsorption and diffusion during subsequent deposition; Trimethylaluminum and ozone are alternately introduced, and an aluminum oxide layer is formed on the surface of the passivation layer using the ALD process. It is important to note that the ALD process is carried out using an ALD reaction chamber. The ALD reaction chamber is equipped with an integrated ozone generator and plasma source, supports simultaneous injection and rapid switching of multiple gases, and is equipped with an online ellipsometer and infrared spectrometer to monitor the film thickness and hydrogen content in real time. Annealing was performed to prepare a TOPCon battery with a low bursting rate.

[0025] In some embodiments, the power of the plasma cleaning is 100-300W.

[0026] Optionally, the power of plasma cleaning can be 100W, 200W, 300W or any value between 100-300W.

[0027] In some embodiments, the volume ratio of argon to oxygen is 1:3-5.

[0028] Optionally, the volume ratio of argon to oxygen can be any value between 1:3, 1:4, 1:5, or 1:3-5.

[0029] In some embodiments, in the mixed atmosphere of ozone and NF3, the concentration of ozone is 500ppm-800ppm and the concentration of NF3 is 10ppm-50ppm.

[0030] Optionally, in the mixed atmosphere of ozone and NF3, the concentration of ozone can be any value between 500 ppm, 600 ppm, 700 ppm, 800 ppm or 500 ppm-800 ppm, and the concentration of NF3 can be any value between 10 ppm, 20 ppm, 30 ppm, 40 ppm, 50 ppm or 10 ppm-50 ppm.

[0031] In some embodiments, the plasma treatment time is 30s-60s and the temperature is 190℃-230℃.

[0032] Optionally, the plasma treatment time can be any value between 30s, 40s, 50s, 60s or 30s-60s, and the temperature can be any value between 190℃, 200℃, 210℃, 220℃, 230℃ or 190℃-230℃.

[0033] In some embodiments, the method for preparing the TOPCon battery with low bursting rate satisfies at least one of the following conditions: A. When trimethylaluminum and ozone are alternately introduced, the pulse duration of trimethylaluminum is 0.1s-0.3s; the pulse duration of ozone is 0.2s-0.5s. Optionally, the pulse duration of trimethylaluminum can be any value between 0.1s, 0.2s, 0.3s, or 0.1s-0.3s, and the pulse duration of ozone can be any value between 0.2s, 0.3s, 0.4s, 0.5s, or 0.2s-0.5s. B. When setting the alumina layer, the flow rate of the trimethylaluminum is 100 sccm-120 sccm, and the flow rate of the ozone is 500 sccm-700 sccm; Optionally, the flow rate of trimethylaluminum can be any value between 100 sccm, 110 sccm, 120 sccm or 100 sccm-120 sccm, and the flow rate of ozone can be any value between 500 sccm, 600 sccm, 700 sccm or 500 sccm-700 sccm. C. Set the reaction temperature of the alumina layer to 120-150℃.

[0034] Optionally, the reaction temperature for setting the alumina layer can be any value between 120℃, 130℃, 140℃, 150℃, or 120-150℃.

[0035] In some embodiments, the method for preparing the TOPCon battery with low bursting rate satisfies at least one of the following conditions: A. Hydrogen gas is also introduced during the ALD process; In some embodiments, the concentration of hydrogen is less than 1 wt%; the introduction of hydrogen can regulate the reaction rate. B. During the ALD process, water vapor is also introduced, and the ratio of water vapor to ozone is 1:0.5-2.

[0036] Optionally, the ratio of water vapor to ozone can be any value between 1:0.5, 1:1, 1:1.5, 1:2, or 1:0.5-2.

[0037] It is important to note that ozone, as an oxygen source, participates in the ALD deposition reaction, providing oxygen atoms to form the Al2O3 film. Its concentration directly affects the deposition rate and film density. Water vapor, as an auxiliary reaction gas, regulates the reaction activity. Water vapor can promote the hydroxylation (Al-OH) of Al2O3, but excessive amounts can lead to a porous film or increased water absorption. The ratio of ozone to water vapor directly affects the stoichiometry of Al2O3. When a fixed ratio is used throughout the process, film performance is easily unstable due to process fluctuations (temperature, pressure changes). In some embodiments, dynamic adjustment of the ozone-to-water vapor ratio (i.e., non-fixed ratio), combined with pulsed gas switching technology, is used to control the coating area to ≤5mm, reducing edge trimming steps and improving yield. For example, the thickness of the alumina layer is fed back in real time through a PID algorithm to ensure uniformity. Dynamic adjustment can adapt to different substrate roughness or precursor activity differences, improving process versatility. Therefore, by combining water vapor ratio adjustment, the density and permeability of the Al2O3 film are balanced, making it suitable for high-k media applications.

[0038] In some embodiments, the annealing includes a first annealing and a second annealing performed sequentially: The temperature of the first annealing is 300℃-400℃, and the time is 5min-15min; Optionally, the temperature of the first annealing can be any value between 300℃, 350℃, 400℃ or 300℃-400℃, and the time can be any value between 5min, 10min, 15min or 5min-15min. It should be noted that the first annealing is a low-temperature annealing, used to desorb residual organic matter at a low temperature; The second annealing temperature is 550℃-650℃, and the time is 20s-40s.

[0039] Optionally, the temperature of the second annealing can be any value between 550℃, 600℃, 650℃ or 550℃-650℃, and the time can be any value between 20s, 30s, 40s or 20s-40s.

[0040] It should be noted that the second annealing is a high-temperature annealing, which is used to rapidly crystallize and suppress hydrogen accumulation, improve the stability of the film's electrical properties, increase crystallinity, and reduce leakage current caused by grain boundary defects.

[0041] The second aspect of this application provides a TOPCon battery with low bursting rate, which is prepared by the method for preparing a TOPCon battery with low bursting rate.

[0042] In some embodiments, the TOPCon battery with low bursting rate satisfies at least one of the following conditions: A. The thickness of the passivation layer is 0.5nm-3nm; Optionally, the thickness of the passivation layer can be any value between 0.5nm, 1nm, 2nm, 3nm, or 0.5nm-3nm; B. The thickness of the alumina layer is 4nm-6nm.

[0043] Optionally, the thickness of the alumina layer can be any value between 4nm, 5nm, 6nm, or 4nm-6nm.

[0044] The implementation schemes of this application will be described in detail below with reference to specific embodiments. However, those skilled in the art will understand that the following embodiments are only for illustrating this application and should not be regarded as limiting the scope of this application. Unless otherwise specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Reagents or instruments used without specified manufacturers are all conventional products that can be purchased commercially.

[0045] Example 1 This embodiment provides a method for preparing a TOPCon battery with a low bursting rate, the specific steps of which are as follows: S1: The silicon wafer will be cleaned and texturized to obtain a texturized silicon substrate. Ar and O2 will be introduced into the plasma cleaning chamber of the ALD reaction chamber to perform plasma cleaning on the texturized silicon substrate (power 200W, volume ratio of Ar to O2 is 1:4, duration is 30s) to obtain a cleaned silicon substrate. S2: Switch to a mixed gas of ozone (650ppm) and NF3 (30ppm), with a total volume ratio of ozone to NF3 of 10:1. Increase the power to 250W and perform plasma treatment on the cleaned silicon substrate for 45 seconds at a temperature of 210°C to form a surface passivation layer with a thickness of approximately 0.8nm. XPS detection shows that the Si 2p binding energy shifts to 102.3eV. S3: Trimethylaluminum and ozone are alternately introduced to deposit an aluminum oxide layer on the passivation layer surface using the ALD process; the ALD process (reaction chamber pressure of 1.5 Torr) involves alternating introduction of trimethylaluminum and ozone for deposition, specifically following the steps in sequence: First deposition cycle: Trimethylaluminum (TMA) as precursor, pulse time 0.2 seconds, purge time 10 seconds, substrate temperature 120°C; The second deposition cycle: Ozone (O3) was used as the oxygen source, with a pulse duration of 0.3 seconds and a purge time of 15 seconds. Simultaneous injection of H2 gas with a concentration ≤1% was used to regulate the reaction rate. The molar ratio of water vapor (H2O) to ozone was controlled within the range of 1:0.5-2, specifically: Initial stage: The O3 to H2O infusion time ratio is set to 1:1, and the O3 to H2O is synchronously injected into the reaction chamber at a constant flow rate (O3: 50 sccm, H2O: 100 sccm); Real-time monitoring: The film thickness is detected by an ellipsometer every 10 seconds, and the standard deviation of the thickness σ is calculated; Dynamic adjustment: When σ > 5%, the proportional adjustment mechanism is triggered: If the O3 flux is insufficient and the thickness is too low, the O3 infusion time ratio is increased to 60% (i.e., O3:H2O time ratio 1.2:1), while the H2O infusion time ratio is reduced to 40%; If the H2O is excessive and the thickness is too high, the H2O infusion time ratio is increased to 60% (i.e., O3:H2O time ratio 0.8:1), while the O3 infusion time ratio is reduced to 40%; Feedback control: After adjustment, the new ratio is maintained for 2 cycles (20 seconds), and the film thickness is re-detected until σ ≤ 3%, entering the stable deposition stage. The substrate temperature of the second deposition cycle is 150℃; S4: After step S3, annealing is carried out using a stepped annealing process. The temperature is held at 350℃ for 10 minutes, and then raised to 600℃ and held for 30 seconds to obtain a TOPCon battery with a low burst rate.

[0046] The relevant settings and configurations for the above experiment are as follows: a plasma cleaning chamber (power range 100-300W, frequency 13.56MHz) is used, equipped with an Ar / O2 mixed gas flow controller (accuracy ±1%), an ozone generator (concentration 500-800ppm, purity 99.999%), and an NF3 gas injection module (concentration 10-50ppm, precisely controlled by MFC).

[0047] After annealing, the hydrogen depth distribution peak was detected by D-SIMS (depth profile secondary ion mass spectrometry) and found to be <1nm (compared to 3nm in conventional processes).

[0048] The actual product of this low-explosion-rate TOPCon battery is shown below. Figure 1 As shown.

[0049] Example 2 The difference from Example 1 is that the plasma cleaning power is 100W and the volume ratio of Ar to O2 is 1:3.

[0050] Example 3 The difference from Example 1 is as follows: First deposition cycle: Trimethylaluminum (TMA) is used as a precursor, the introduction time is 0.3 seconds, and the reaction temperature is 150°C; Second deposition cycle: Ozone (O3) is used as an oxygen source, the introduction time is 0.5 seconds, and H2 (concentration ≤1%) is injected simultaneously to adjust the reaction rate. In addition, the introduction ratio of water vapor and ozone is controlled to be 1:2.

[0051] Comparative Example 1 The difference from Example 1 is that plasma cleaning in step S1 is not performed.

[0052] Comparative Example 2 The difference from Example 1 is that ozone is not introduced during the plasma treatment in step S2.

[0053] Comparative Example 3 The difference from Example 1 is that ozone is replaced with oxygen during the plasma treatment in step S2.

[0054] Comparative Example 4 The difference from Example 1 is that the temperature is 300°C during the plasma treatment in step S2.

[0055] Comparative Example 5 The difference from Example 1 is that NF3 is not introduced during the plasma treatment in step S2.

[0056] Comparative Example 6 The difference from Example 1 is that hydrogen gas is not introduced during step S3.

[0057] Comparative Example 7 The difference from Example 1 is that the ratio of water vapor to ozone introduced in step S3 is 1:5.

[0058] Comparative Example 8 The difference from Example 1 is that it uses a conventional process, and the specific method is as follows: S1: Texturing process is performed on the silicon wafer; S2: Boron diffusion treatment is performed on the front side of the silicon wafer. The boron diffusion process includes four steps: pre-oxidation, deposition, advancement, and post-oxidation. S3: Remove BSG from the back and edge of the silicon wafer; S4: A tunneling oxide layer is prepared on the back side of a silicon wafer using an LPCVD device; the tunneling layer is a silicon oxide layer with a thickness of 2 nm.

[0059] S5: Poly-Si layer is formed by LPCVD on the back side, using a deposition pressure of 20 Pa, a temperature of 620 °C, a silane flow rate of 1500 SCCM, and a deposition time of 24 min; S6: The silicon wafer in S7 is phosphorus-doped with phosphorus oxychloride at a flow rate of 1500 sccm / min, oxygen at a flow rate of 650 sccm / min, pressure of 160 mbar, time of 18 min, and temperature of 795℃; then the silicon wafer is heated to 885℃ and pushed forward for 25 min. S7: The silicon wafer from S8 is passed through a chain HF process with the front side facing down, and the HF concentration is controlled at 9% to remove the front PSG; then the silicon wafer is washed with 75wt% KOH alkaline solution to remove poly. S8: Deposit ALD 3.5nm on the silicon wafer, TMA 50sccm, ozone 100sccm, 30 cycles, and then heat to 820℃ for annealing. S9: 76nm silicon nitride on the front and 80nm silicon nitride on the back, printed and sintered (sintering temperature 810℃, time 50S). S10: Perform electrical performance testing on the finished TOPCon battery.

[0060] The TOPCon batteries prepared in the above embodiments and comparative examples were subjected to performance tests, and the specific test results are shown in Table 1.

[0061] Table 1 Performance Tests

[0062] analyze: The results above show that Examples 1-3 of this application significantly reduce the TOPCon battery film explosion rate through refined process parameters, dynamic gas ratio adjustment, and stepped annealing design. Comparative Examples 1-7 are all outside the parameter range of this application, and their effects are significantly lower than those of Example 1. Comparative Example 8 uses a conventional process and has a relatively high film explosion rate.

[0063] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

[0064] Furthermore, those skilled in the art will understand that although some embodiments herein include certain features included in other embodiments but not others, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the foregoing claims, any of the claimed embodiments can be used in any combination. The information disclosed in this background section is intended only to enhance the understanding of the general background of this application and should not be construed as an admission or in any way implying that such information constitutes prior art known to those skilled in the art.

Claims

1. A method for preparing a TOPCon battery with low burst film rate, characterized in that, include: The silicon substrate was plasma cleaned in a mixed atmosphere of argon and oxygen to obtain a cleaned silicon substrate. In a mixed atmosphere of ozone and NF3, a passivation layer is formed on the surface of the cleaned silicon substrate by plasma treatment. Trimethylaluminum and ozone are alternately introduced, and an aluminum oxide layer is formed on the surface of the passivation layer using the ALD process. Annealing was performed to prepare a TOPCon battery with a low bursting rate.

2. The method for preparing a TOPCon battery with low burst film rate according to claim 1, characterized in that, The power of the plasma cleaning is 100-300W.

3. The method for preparing a TOPCon battery with low bursting film rate according to claim 1, characterized in that, The volume ratio of argon to oxygen is 1:3-5.

4. The method for preparing a TOPCon battery with low burst film rate according to claim 1, characterized in that, In the mixed atmosphere of ozone and NF3, the concentration of ozone is 500ppm-800ppm and the concentration of NF3 is 10ppm-50ppm.

5. The method for preparing a TOPCon battery with low bursting film rate according to claim 1, characterized in that, The plasma treatment time is 30s-60s, and the temperature is 190℃-230℃.

6. The method for preparing a TOPCon battery with low burst film rate according to claim 1, characterized in that, At least one of the following conditions must be met: A. When trimethylaluminum and ozone are alternately introduced, the pulse duration of trimethylaluminum is 0.1s-0.3s; the pulse duration of ozone is 0.2s-0.5s. B. When setting the alumina layer, the flow rate of the trimethylaluminum is 100 sccm-120 sccm, and the flow rate of the ozone is 500 sccm-700 sccm; C. Set the reaction temperature of the alumina layer to 120-150℃.

7. The method for preparing a TOPCon battery with low burst film rate according to claim 1, characterized in that, At least one of the following conditions must be met: A. Hydrogen gas is also introduced during the ALD process; B. During the ALD process, water vapor is also introduced, and the ratio of water vapor to ozone is 1:0.5-2.

8. The method for preparing a TOPCon battery with low burst film rate according to any one of claims 1-7, characterized in that, The annealing includes a first annealing and a second annealing performed sequentially: The temperature of the first annealing is 300℃-400℃, and the time is 5min-15min; The second annealing temperature is 550℃-650℃, and the time is 20s-40s.

9. A TOPCon battery with a low bursting rate, characterized in that, It is prepared by the method for preparing a TOPCon battery with low bursting film rate according to any one of claims 1-8.

10. The TOPCon battery with low bursting rate according to claim 9, characterized in that, At least one of the following conditions must be met: A. The thickness of the passivation layer is 0.5nm-3nm; B. The thickness of the alumina layer is 4nm-6nm.

Images