A method for preparing a sputtering hybrid semiconductor thin film-based light detector

Abstract

The application relates to the technical field of semiconductor photoelectric devices and thin film manufacturing, and particularly discloses a preparation method of a light detector based on a sputtering hybrid semiconductor thin film. The prepared light detector comprises, from bottom to top, a transparent conductive substrate, a bottom charge transport layer, a hybrid semiconductor light absorption layer, a top charge transport layer and a metal electrode. The hybrid semiconductor light absorption layer is prepared by using a magnetron sputtering process based on target self-heating. The thermal electron emission effect of the target self-heating is used to excite high-density plasma at a low working voltage, to rapidly and lowly damage the target for sputtering, and to form a dense and pure-phase hybrid semiconductor thin film. The application uses a multi-dimensional method of adjusting the cathode surface magnetic flux, adjusting the working voltage and target self-heating to improve the plasma density in the chamber. While realizing high-speed deposition of 30-500 nm / min, the hybrid semiconductor thin film defect density is reduced and the photoelectric performance of the light absorption layer is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic devices and thin film manufacturing technology, and in particular to a method for fabricating a photodetector based on sputtered hybrid semiconductor thin films. Background Technology

[0002] Organic-inorganic hybrid semiconductor materials are key photosensitive materials for fabricating high-performance photodetectors. Due to their excellent light absorption and charge transport properties, these materials, as the light absorption layer of a photodetector, can efficiently convert incident light into electrical signals, thus exhibiting superior device performance in this field. However, the commercial fabrication of photodetectors based on organic-inorganic hybrid semiconductor materials still faces significant technological bottlenecks.

[0003] Existing methods for preparing hybrid semiconductor thin films are mainly divided into wet and dry processes. While wet processes (such as solution spin coating) are widely used in laboratories, the complex solution crystallization kinetics of the film formation process lead to poor process repeatability and difficulty in achieving uniform coating over large areas, making them unsuitable for large-scale industrial production. In contrast, vacuum dry processes offer advantages such as high film uniformity, good process repeatability, and ease of large-area scaling. However, in existing dry processes, the commonly used thermal evaporation method has significant limitations when processing hybrid semiconductors: because hybrid materials contain heat-sensitive and easily decomposed organic components, the heating temperature of the evaporation source must be strictly limited to avoid pyrolysis of the organic matter at high temperatures. This compromise results in a decrease in the overall film deposition rate and excessively long production time, failing to meet the requirements of industrial mass production.

[0004] To address the issues of poor repeatability and insufficient large-area uniformity in solution spin coating, and the low deposition rate in thermal evaporation, existing technologies have explored magnetron sputtering to prepare organic-inorganic hybrid semiconductor thin films for use as light-absorbing layers in photodetectors. Magnetron sputtering, as a mature physical vapor deposition technique, offers advantages such as large deposition area, strong process controllability, easily adjustable film thickness, and good compatibility with existing vacuum deposition equipment, theoretically making it suitable for the large-scale preparation of hybrid semiconductor thin films. However, because hybrid semiconductor materials typically contain thermally unstable organic components and weakly interacting soft lattice structures, they are susceptible to high-energy particle bombardment, electron irradiation, and localized thermal effects in a plasma environment, leading to the decomposition, volatilization, or loss of organic components, thus affecting the quality and performance of the thin film.

[0005] Furthermore, conventional magnetron sputtering technology, when applied to the fabrication of hybrid semiconductor thin films, inherently suffers from the difficulty of simultaneously achieving high deposition rates and low-damage film formation. Increasing the deposition rate typically requires increasing the discharge power or plasma intensity, but this further increases the energy input to the target and the deposited film, leading to the decomposition, volatilization, or loss of thermally unstable organic components in the hybrid material. This results in deviations in the film's stoichiometry, reduced crystal phase purity, and an increase in defect states, ultimately causing increased dark current and decreased responsivity in the fabricated photodetector. Conversely, reducing the sputtering power to minimize plasma damage to organic components significantly decreases the deposition rate and throughput, making it difficult to meet the requirements for large-area industrial fabrication. Therefore, existing magnetron sputtering technology still struggles to achieve a balance between high deposition rates, low damage, and high-quality films when used to fabricate organic-inorganic hybrid semiconductor thin films required for photodetectors. Summary of the Invention

[0006] To address the challenge of achieving both high deposition rates and low-damage film formation when conventional magnetron sputtering technology is applied to the fabrication of hybrid semiconductor thin films, this application provides a method for fabricating a photodetector based on sputtered hybrid semiconductor thin films.

[0007] The method for fabricating a photodetector based on sputtered hybrid semiconductor thin films provided in this application adopts the following technical solution: A method for fabricating a photodetector based on sputtered hybrid semiconductor thin films includes the following steps: A bottom charge transport layer is fabricated on a transparent conductive substrate; A hybrid semiconductor light-absorbing layer is deposited on the bottom charge transport layer using a magnetron sputtering process. A top charge transport layer and a metal electrode are sequentially fabricated on the hybrid semiconductor light-absorbing layer to form a photodiode-type device structure; The magnetron sputtering process includes: A hybrid semiconductor material target is provided and mounted on a target base in a sputtering chamber. Thermal isolation is used to partially block the heat conduction path between the target and the target base cooling system. After the sputtering chamber is evacuated, a working gas is introduced, and a working voltage is applied to initiate a ignition discharge. The discharge heat generated by the plasma bombarding the target material is accumulated, allowing the target material to achieve self-heating. Under the self-heating state of the target material, the enhanced electron emission effect caused by the increase in target material temperature is used to excite high-density plasma. The target material is sputtered rapidly under low operating voltage conditions, so that the sputtered particles are deposited on the bottom charge transport layer to form a hybrid semiconductor light absorption layer.

[0008] In the magnetron sputtering process for preparing the hybrid semiconductor light-absorbing layer in this application, thermal isolation is used to block the heat conduction path between the target and the cooling system, allowing the discharge heat generated by plasma bombardment during sputtering to accumulate on the target, achieving self-heating of the target. After self-heating, the thermionic emission on the target surface is significantly enhanced, thereby exciting high-density plasma at low operating voltage and achieving high-throughput sputtering of the target. This method improves the contradiction of "high voltage causing damage to organic components and low voltage resulting in slow deposition rate" in traditional sputtering. It achieves a high deposition rate under mild conditions of low voltage and low ion bombardment energy, reducing the decomposition and destruction of organic components in the hybrid material by high-energy particles, achieving low-damage, high-rate deposition, and obtaining a dense, pure-phase film with few defects, thereby improving the photoelectric performance of the light-absorbing layer in the photodetector.

[0009] Furthermore, the thermal isolation means include: removing the thermally conductive metal connector between the target material and the target base, and / or adding a thermal insulation medium layer between the target material and the target base.

[0010] By removing the thermally conductive metal connectors and / or adding a thermal insulation layer between the target and the target base, the loss of heat from the target to the cooling system can be effectively blocked, localizing the heat generated by bombardment to the target surface and promoting rapid self-heating of the target. This thermal isolation method is simple and easy to implement, requires no complex modifications to the magnetron sputtering equipment, and is low in cost and highly compatible.

[0011] Furthermore, the thermal isolation method includes: using several point-contact thermally insulating and conductive connectors to connect the target material to the target base, thereby achieving a conductive connection between the target material and the target base, and partially blocking the thermal conduction path between the target material and the target base.

[0012] By employing several point-contact thermally conductive connectors (such as carbon-based connectors), an electrical connection is achieved between the target material and the target base, while the low thermal conductivity of carbon material partially blocks the heat conduction path. This structure ensures that the operating voltage required for discharge can be applied normally to the target material, while effectively suppressing the transfer of heat from the target material to the cooling system.

[0013] Furthermore, in the magnetron sputtering process, the maximum magnetic flux parallel to the target surface is 40 to 100 mT, and the average operating voltage is -300 to -1500 V.

[0014] Furthermore, in the magnetron sputtering process, the plasma density in the sputtering chamber is adjusted by controlling the magnetic flux and / or the operating voltage, thereby controlling the deposition rate of the thin film to be between 30 and 500 nm / min.

[0015] Because the electron emission capability of the target material is significantly enhanced after self-heating, the plasma density is sensitive to changes in magnetic flux and operating voltage. By adjusting the magnetic flux and / or operating voltage, the thin film deposition rate can be precisely controlled over a wide rate range of 30–500 nm / min. This satisfies both the laboratory's need for precise control of nanoscale thin films and the industrial-scale large-area continuous deposition requirements for high throughput, providing excellent process flexibility.

[0016] Furthermore, in the magnetron sputtering process, the single sputtering time is controlled within 3 to 20 minutes.

[0017] A single sputtering time of 3–20 minutes can ensure the required film thickness for optoelectronic devices while preventing thermal stress fracture or thermal decomposition of components in the target material due to prolonged heat accumulation. This time window, matched with a high deposition rate, achieves an optimal balance between high-speed film formation and target thermal protection.

[0018] Furthermore, in the magnetron sputtering process, the maximum self-heating temperature of the target material does not exceed 200°C.

[0019] Limiting the maximum self-heating temperature of the target material to no more than 200℃ can both excite sufficient thermionic emission to achieve low-voltage high-density sputtering and prevent the organic components in the hybrid semiconductor material from decomposing and volatilizing due to excessively high temperatures, thus avoiding thermal damage to the target material.

[0020] Furthermore, the hybrid semiconductor light-absorbing layer is an organic-inorganic hybrid semiconductor thin film formed by chemical bonding or physical interaction between organic and inorganic components at the molecular or nanoscale.

[0021] Furthermore, the material system of the organic-inorganic hybrid semiconductor thin film is selected from any one of organic-inorganic hybrid perovskite materials, conductive metal-organic framework materials, low-dimensional hybrid metal halide materials with non-perovskite structures, and organic-inorganic hybrid chalcogenide materials.

[0022] Furthermore, the preparation methods of the bottom charge transport layer and the top charge transport layer are selected from any one of solution spin coating, vacuum evaporation, or magnetron sputtering; the preparation method of the metal top electrode is selected from any one of vacuum evaporation, magnetron sputtering, or atomic layer deposition.

[0023] In summary, this application includes the following beneficial technical effects: In this application, when preparing hybrid semiconductor thin films using magnetron sputtering, thermal isolation is introduced between the target and the target-substrate cooling system to partially block the heat conduction path from the target to the cooling system. This prevents the sputtering heat and discharge heat generated by ion bombardment during sputtering from being rapidly dissipated, resulting in heat accumulation inside the target and rapid self-heating of the target surface. As the target temperature increases, its surface thermionic emission capability is significantly enhanced. Under these conditions, only a relatively low sputtering operating voltage is needed to generate high-density plasma above the target, achieving high-throughput etching of the target.

[0024] Based on the above mechanism, this application effectively addresses the contradiction of "high voltage causing damage and low voltage resulting in slow deposition rates" in conventional magnetron sputtering technology. Utilizing the electron emission effect enhanced by the self-heating of the target material, high-throughput sputtering can be achieved at low operating voltages, with deposition rates meeting mass production requirements, while bombardment energy remains consistently at a low damage level. The resulting thin film is dense, pure-phase, and free of large particle defects, reducing the decomposition and destruction of organic components in the hybrid material by high-energy particles, significantly suppressing the formation of organic vacancy defects and micropores, and ensuring the accuracy of the film's stoichiometry and low defect density. Using the prepared hybrid semiconductor thin film as the light-absorbing layer of a photodetector yields excellent device performance.

[0025] The magnetron sputtering process described in this application is based on conventional magnetron sputtering equipment, requiring only simple modifications to the target mounting method. It offers high process repeatability and excellent film uniformity, making it particularly suitable for large-area, low-cost mass production of organic-inorganic hybrid semiconductor materials. This application replaces traditional dry thermal evaporation with magnetron sputtering technology and overcomes the physical limitation of traditional evaporation methods, which sacrifice deposition rate to protect easily decomposable organic components, by effectively increasing the plasma density within the chamber. This method allows for adjustable deposition rates of hybrid semiconductor thin films between 30 and 500 nm / min, meeting the demands of large-area, high-throughput industrial production.

[0026] Furthermore, this application provides three independent yet combinable plasma enhancement schemes: adjusting the magnetic flux to 40–100 mT, adjusting the voltage to -300–-1500 V, and target self-heating. This allows the sputtering process to flexibly combine and select the optimal control methods based on the thermal stability of different hybrid targets and specific equipment configurations, in order to generate high-density plasma and achieve rapid etching.

[0027] This application provides a hybrid semiconductor light-absorbing layer for a photodetector that encompasses a variety of materials, including hybrid perovskite materials, conductive MOFs, low-dimensional metal halides, and hybrid chalcogenides. Simultaneously, the device's charge transport layer and electrodes support various mainstream semiconductor processes such as spin coating, evaporation, magnetron sputtering, and atomic layer deposition, enabling it to meet the needs of research in laboratory environments as well as be integrated into large-scale wafer fabrication using all-vacuum dry manufacturing processes. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the structure of a photodetector based on a sputtered hybrid semiconductor thin film prepared according to an embodiment of this application; Figure 2 These are schematic diagrams of target installation (thermal sputtering) in embodiments 1-3 of this application; Figure 3 This is a schematic diagram of the target installation (cold sputtering) in Comparative Example 1 of this application. Figure 4 This is a graph showing the photoresponse current-voltage characteristic of the photodetector prepared in Example 1 of this application; Figure 5 This is a dynamic current-time curve of the photodetector prepared in Example 1 of this application; Figure 6 This is a comparison chart of the responsivity results of the photodetectors prepared in Example 1 and Comparative Example 1 of this application. Detailed Implementation

[0029] The following is in conjunction with the appendix Figures 1-6 This application will be described in further detail.

[0030] Example 1: Upright FAPbI3 photodetector based on target self-heating sputtering The structure of a photodetector is as follows Figure 1 As shown, it includes a transparent conductive substrate, a bottom charge transport layer, a hybrid semiconductor light absorption layer, a top charge transport layer, and a metal electrode arranged sequentially from bottom to top.

[0031] The photodetector structure prepared in this embodiment is FTO / TiO2 / FAPbI3 / Spiro-OMeTAD / Ag; wherein the hybrid semiconductor light-absorbing layer FAPbI3 is prepared by a magnetron sputtering process based on target self-heating.

[0032] The fabrication method of a photodetector includes the following steps: Step 1: Prepare a bottom charge transport layer on a transparent conductive substrate. The specific method is as follows: The FTO conductive glass substrate was treated with a standard ultrasonic cleaning process, followed by oxygen plasma cleaning. A titanium diisopropanol / diacetylacetone solution was dissolved in anhydrous ethanol and spin-coated onto the FTO surface at 4000 rpm for 30 seconds using a dynamic spin-coating method. The substrate was then placed in a muffle furnace and sintered at 450°C for 30 minutes. After natural cooling, a dense, non-porous titanium dioxide (c-TiO2) bottom charge transport layer (electron transport layer) with a thickness of approximately 25 nm was formed.

[0033] Step 2: Using magnetron sputtering, a hybrid semiconductor light-absorbing layer is sputtered and deposited on the bottom charge transport layer. The specific method is as follows: The FAPbI3 hybrid perovskite precursor mineral target is placed on the cathode target base, such as... Figure 2 As shown, several point-contact carbon-based conductive connectors are provided between the target material and the target base to achieve conductive connection between the target material and the target base, and to block the heat conduction path between the target material and the target base cooling system.

[0034] Adjust the maximum parallel magnetic flux on the cathode surface to 50 mT, introduce argon gas into the chamber to maintain the working pressure, and apply a working voltage of -450 V to initiate ignition discharge.

[0035] Because the heat-conducting medium between the target and the target substrate is removed, the plasma discharge heat accumulates on the target surface, causing the target surface to heat up to 190-200℃. As the target surface temperature increases, the electron emission on the target surface is significantly enhanced by thermal excitation. Under a relatively low sputtering operating voltage, the enhanced electron emission effect is used to excite a high-density plasma above the target. Under mild bombardment conditions that maintain low ion kinetic energy (low damage), the plasma rapidly sputters and etches the target, achieving a hybrid semiconductor thin film deposition rate of 40 nm / min. After the target thickness is reached, the film is removed to obtain the FAPbI3 light-absorbing layer.

[0036] Step 3: On the hybrid semiconductor light-absorbing layer, a top charge transport layer and a metal electrode are sequentially fabricated to form a photodiode-type device structure. The specific method is as follows: In a glove box, 72.3 mg of Spiro-OMeTAD powder was weighed and dissolved in 1 mL of chlorobenzene. Then, 28.8 μL of 4-tert-butylpyridine (tBP) and 17.5 μL of lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI) acetonitrile solution (520 mg / mL) were added sequentially as dopants. The well-mixed solution was spin-coated onto the FAPbI3 light-absorbing layer at 3000 rpm for 30 seconds. The sample was then placed in dry air for 12 hours to oxidize and improve its conductivity, forming the top charge transport layer (hole transport layer).

[0037] Finally, a layer of Ag with a thickness of approximately 100 nm was deposited as a metal electrode using a vacuum evaporation process.

[0038] Example 2: Inverted MAPbI3 Photodetector Based on Target Self-Heating Thermosputtering The photodetector structure prepared in this embodiment is ITO / NiO. x / MAPbI3 / PCBM / Ag, wherein the hybrid semiconductor light-absorbing layer MAPbI3 is prepared by a magnetron sputtering process based on target self-heating.

[0039] The fabrication method of a photodetector includes the following steps: Step 1: Prepare a bottom charge transport layer on a transparent conductive substrate. The specific method is as follows: The ITO conductive glass with the electrode pattern engraved was ultrasonically cleaned sequentially in deionized water, acetone, and isopropanol for 15 minutes each. After drying with nitrogen, it was treated in a UV ozone cleaner for 15 minutes to enhance surface hydrophilicity. Nickel oxide (NiO) was then prepared. x A precursor solution (a solution of nickel nitrate hexahydrate and ethylenediamine dissolved in ethylene glycol) was spin-coated onto an ITO substrate at 3000 rpm for 30 seconds. The substrate was then placed on an air heating stage and annealed at 300°C for 60 minutes to allow thermal decomposition and crystallization, forming a dense NiO layer approximately 30 nm thick. x Bottom charge transport layer (hole transport layer).

[0040] Step 2: Using magnetron sputtering, a hybrid semiconductor light-absorbing layer is sputtered and deposited on the bottom charge transport layer. The specific method is as follows: The MAPbI3 hybrid perovskite precursor target was mounted on the cathode of the magnetron sputtering chamber. The mounting method of the target was the same as in Example 1. Thermal isolation was used to partially block the heat conduction path between the target and the target base cooling system.

[0041] The maximum parallel magnetic flux on the cathode surface was adjusted to 60 mT, argon gas was introduced into the chamber to maintain the working pressure, and a working voltage of -500 V was applied to initiate the ignition discharge. The target material was self-heated by the heat accumulation of the plasma discharge, and high-density plasma was excited to rapidly etch the target material. The film deposition rate was controlled at 100 nm / min. After the target thickness was reached, the film was removed to obtain the MAPbI3 light-absorbing layer.

[0042] Step 3: On the hybrid semiconductor light-absorbing layer, a top charge transport layer and a metal electrode are sequentially fabricated to form a photodiode-type device structure. The specific method is as follows: The sample with the deposited light-absorbing layer was transferred to a nitrogen glove box. Methyl [6,6]-phenyl-C61-butyrate (PCBM) powder was weighed and dissolved in chlorobenzene to prepare a solution with a concentration of 20 mg / mL. This solution was spin-coated onto the surface of the MAPbI3 light-absorbing layer at 2000 rpm for 45 seconds, and then slightly annealed at 100°C for 10 minutes to evaporate the residual solvent, forming a top charge transport layer (electron transport layer) with a thickness of approximately 40 nm.

[0043] Finally, a layer of Ag with a thickness of approximately 100 nm was deposited as a metal electrode using a vacuum evaporation process.

[0044] Example 3: Upright FAPbI3 photodetector based on strong magnetic field and self-heating sputtering of target material The photodetector structure prepared in this embodiment is ITO / SnO2 / FAPbI3 / PTAA / Au, wherein the hybrid semiconductor light-absorbing layer FAPbI3 is prepared by a magnetron sputtering process based on target self-heating.

[0045] The fabrication method of a photodetector includes the following steps: Step 1: Prepare a bottom charge transport layer on a transparent conductive substrate. The specific method is as follows: After cleaning the ITO glass substrate, a 15% (w / w) tin dioxide (SnO2) colloidal dispersion was diluted with deionized water to a concentration of 2.67%. The diluted SnO2 solution was spin-coated onto the ITO surface at 3000 rpm for 30 seconds, and then annealed at 150°C in air for 30 minutes to remove surfactants and enhance crystallization, resulting in the bottom charge transport layer (electron transport layer).

[0046] Step 2: Using magnetron sputtering, a hybrid semiconductor light-absorbing layer is sputtered and deposited on the bottom charge transport layer. The specific method is as follows: The FAPbI3 hybrid perovskite precursor target was mounted on the cathode of the magnetron sputtering chamber. The target mounting method was the same as in Example 1. Thermal isolation was used to partially block the heat conduction path between the target and the target base cooling system.

[0047] The maximum parallel magnetic flux on the cathode surface was adjusted to 55 mT, argon gas was introduced into the chamber to maintain the working pressure, and a working voltage of -800 V was applied to initiate the ignition discharge. The target material was self-heated by the heat accumulation of the plasma discharge, which excited high-density plasma to rapidly etch the target material. The film deposition rate was controlled at 400 nm / min, and the film was removed after the target thickness was reached.

[0048] Step 3: On the hybrid semiconductor light-absorbing layer, a top charge transport layer and a metal electrode are sequentially fabricated to form a photodiode-type device structure. The specific method is as follows: A 10 mg / mL polytriarylamine (PTAA) toluene solution was prepared, and appropriate amounts of Li-TFSI and tBP were added for conductive doping. In a glove box, the PTAA solution was spin-coated onto the sputtered FAPbI3 surface at 3000 rpm for 30 seconds, followed by annealing at 100°C for 10 minutes to form the top charge transport layer (hole transport layer).

[0049] Finally, an 80 nm thick Au layer was deposited as the metal electrode using a vacuum evaporation process.

[0050] Comparative Example 1 The photodetector structure and composition of each layer in Comparative Example 1 are the same as those in Example 1. The difference is that the hybrid semiconductor light-absorbing layer FAPbI3 in Comparative Example 1 is prepared by high-pressure cold sputtering process.

[0051] In traditional magnetron sputtering equipment, a highly thermally conductive metal backplate or thermally conductive silicone is typically used to connect the target to the target base, such as... Figure 3 As shown, the heat of the target material is conducted through the target base and then carried away by the water cooling system to prevent the target material from overheating.

[0052] In step 2 of Comparative Example 1, the conventional target mounting method described above is used, i.e., the target and target base are connected by a metal heat-conducting component to ensure that the target is forcibly cooled by circulating water during sputtering, preventing temperature rise and maintaining the target temperature at 20~30℃. To obtain a deposition rate similar to that of Example 1, in step 2 of Comparative Example 1, the sputtering operating voltage is increased to approximately -800 V for ignition discharge, and the sputtering rate is 40 nm / min. Other steps are the same as in Example 1.

[0053] The performance of the photodetectors prepared in Example 1 and Comparative Example 1 was tested, and the results are as follows: like Figure 4 As shown, the photodetector prepared in Example 1 exhibits different currents under different optical powers, demonstrating a good response to changes in light intensity. In particular, when the light intensity changes proportionally, its photocurrent also changes proportionally, exhibiting good linear response characteristics.

[0054] Figure 5 The photocurrent response of the photodetector prepared in Example 1 under pulsed light irradiation is shown, indicating that the device can reflect the waveform signal of light intensity well.

[0055] Figure 6The responsivity results of the photodetectors prepared in Example 1 and Comparative Example 1 are shown. Compared with Comparative Example 1, the photodetector prepared in Example 1 has better device performance and responsivity. Because a higher operating voltage was applied in Comparative Example 1, high-energy argon ions violently bombarded the target and substrate, causing the fragile organic components to undergo pyrolysis and volatilization. This reduced the quality of the deposited hybrid semiconductor film, making it unsuitable as a light-absorbing layer for preparing high-performance optoelectronic devices.

[0056] The above are all preferred embodiments of this application, and are not intended to limit the scope of protection of this application. Therefore, all equivalent changes made in accordance with the structure, shape and principle of this application should be covered within the scope of protection of this application.

Claims

1. A method for fabricating a photodetector based on sputtered hybrid semiconductor thin films, characterized in that: Includes the following steps: A bottom charge transport layer is fabricated on a transparent conductive substrate; A hybrid semiconductor light-absorbing layer is deposited on the bottom charge transport layer using a magnetron sputtering process. A top charge transport layer and a metal electrode are sequentially fabricated on the hybrid semiconductor light-absorbing layer to form a photodiode-type device structure; The magnetron sputtering process includes: A hybrid semiconductor material target is provided and mounted on a target base in a sputtering chamber. Thermal isolation is used to partially block the heat conduction path between the target and the target base cooling system. After the sputtering chamber is evacuated, a working gas is introduced, and a working voltage is applied to initiate a ignition discharge. The discharge heat generated by the plasma bombarding the target material is accumulated, allowing the target material to achieve self-heating. Under the self-heating state of the target material, the enhanced electron emission effect caused by the increase in target material temperature is used to excite high-density plasma. The target material is sputtered rapidly under low operating voltage conditions, so that the sputtered particles are deposited on the bottom charge transport layer to form a hybrid semiconductor light absorption layer.

2. The method for fabricating a photodetector based on sputtered hybrid semiconductor thin films according to claim 1, characterized in that: The thermal isolation methods include: removing the thermally conductive metal connector between the target material and the target base, and / or adding a thermal insulation medium layer between the target material and the target base.

3. The method for fabricating a photodetector based on sputtered hybrid semiconductor thin films according to claim 2, characterized in that: The thermal isolation method includes: using several point-contact thermally insulating and conductive connectors to connect the target material to the target base, thereby achieving a conductive connection between the target material and the target base, and partially blocking the thermal conduction path between the target material and the target base.

4. The method for fabricating a photodetector based on sputtered hybrid semiconductor thin films according to claim 1, characterized in that: In the magnetron sputtering process, the maximum magnetic flux parallel to the target surface is 40 to 100 mT, and the average operating voltage is -300 to -1500 V.

5. A method for fabricating a photodetector based on a sputtered hybrid semiconductor thin film according to claim 4, characterized in that: In the magnetron sputtering process, the plasma density in the sputtering chamber is adjusted by controlling the magnetic flux and / or the operating voltage, thereby controlling the deposition rate of the thin film to be between 30 and 500 nm / min.

6. A method for fabricating a photodetector based on a sputtered hybrid semiconductor thin film according to claim 5, characterized in that: In the magnetron sputtering process, the single sputtering time is controlled within 3 to 20 minutes.

7. The method for fabricating a photodetector based on sputtered hybrid semiconductor thin films according to claim 6, characterized in that: In the magnetron sputtering process, the maximum self-heating temperature of the target material does not exceed 200°C.

8. The method for fabricating a photodetector based on sputtered hybrid semiconductor thin films according to claim 1, characterized in that: The hybrid semiconductor light-absorbing layer is an organic-inorganic hybrid semiconductor thin film formed by chemical bonding or physical interaction between organic and inorganic components at the molecular or nanoscale.

9. The method for fabricating a photodetector based on sputtered hybrid semiconductor thin films according to claim 8, characterized in that: The material system of the organic-inorganic hybrid semiconductor thin film is selected from any one of organic-inorganic hybrid perovskite materials, conductive metal-organic framework materials, low-dimensional hybrid metal halide materials with non-perovskite structures, and organic-inorganic hybrid chalcogenide materials.

10. The method for fabricating a photodetector based on sputtered hybrid semiconductor thin films according to claim 1, characterized in that: The preparation methods of the bottom charge transport layer and the top charge transport layer are selected from any one of solution spin coating, vacuum evaporation, or magnetron sputtering; the preparation method of the metal top electrode is selected from any one of vacuum evaporation, magnetron sputtering, or atomic layer deposition.

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