Gas inlet structure for wafer processing and semiconductor processing apparatus

Abstract

The application relates to the technical field of wafer processing equipment, in particular to a gas inlet structure for wafer processing and a semiconductor processing equipment, which comprises a gas inlet mechanism, a center gas guide part and an edge gas guide part; the gas inlet mechanism is arranged at the top of a reaction chamber; the center gas guide part is arranged at the gas inlet mechanism and has an air outlet end facing the center area of a wafer, so as to guide the generated plasma to the center area after being connected with a first gas source; the edge gas guide part is arranged at the gas inlet mechanism and has an air outlet end arranged outside the air outlet end of the center gas guide part and facing the edge area of the wafer, so as to guide the generated plasma to the edge area after being connected with a second gas source; the application aims at the pain points that the existing center gas inlet structure has limited flow field regulation and control capability, it is difficult to balance the etching uniformity of the center area and the edge area of the wafer, and it is unable to adapt to long-term stable operation of high-power and high-temperature processes.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and in particular to an air intake structure for wafer processing and semiconductor processing equipment. Background Technology

[0002] In the process implementation of semiconductor dry etching equipment, the flow field uniformity and temperature resistance of the air intake system are the core factors affecting the etching rate and morphology consistency. The current mainstream central air intake structure has limited ability to control the flow field distribution, making it difficult to adapt to the uniformity requirements of the central and edge regions of high-precision etching. It cannot support long-term stable operation in high-power and high-temperature process scenarios, which greatly restricts the expansion of the etching process window and the improvement of equipment maintenance efficiency. Summary of the Invention

[0003] This invention relates to an air intake structure for wafer processing and a semiconductor processing device. The purpose is to improve the uniformity of the etching surface, expand the process window, and ensure the long-term reliable operation of the equipment by differentially controlling the plasma flow rate in the central and edge regions of the wafer through a zoned independent center and edge gas guide design.

[0004] To achieve the above objectives, the present invention provides an air intake structure for wafer processing, comprising: An air intake mechanism is located at the top of the reaction chamber. The orthographic projection structure of the air intake mechanism on the inner bottom wall of the reaction chamber covers the orthographic projection structure of the hot stage located inside the reaction chamber and the wafer on its top on the inner bottom wall of the reaction chamber. A central gas guide is provided on the gas inlet mechanism with its outlet facing the central region of the wafer, so that the plasma generated after being connected to the external first gas source will be guided to the central region. An edge gas guide is provided on the gas inlet mechanism, and its gas outlet is arranged around the outside of the gas outlet of the central gas guide and facing the edge region of the wafer, so that the plasma generated after being connected to the external second gas source is guided to the edge region.

[0005] Optionally, the air intake mechanism includes a heating element, a first ceramic element, a second ceramic element, and a third ceramic element; The heating element is located at the top of the reaction chamber, and a window is provided through it along the axial direction. The inner sidewall of the window is recessed with a support groove extending circumferentially near its air inlet end. The first ceramic component is disposed within the support groove and blocks the air inlet of the window; The second ceramic component is disposed on top of the first ceramic component, and there is a gap between the bottom of the second ceramic component and the top of the heating component, so that the heat generated by the heating component can be conducted to the second ceramic component through the first ceramic component. The third ceramic component is disposed on top of the second ceramic component.

[0006] Optionally, the central air guide includes a first guide channel, a central groove one, a central groove two, a plurality of second guide channels arranged at intervals along the circumference, and a plurality of central axial holes arranged at intervals along the circumference. The first guide channel is axially disposed on the third ceramic component, and its air inlet end is connected to the first gas source; The central groove extends circumferentially and is connected to the first guide channel on the third ceramic component; The second central groove extends circumferentially and is disposed on the second ceramic component; Each of the second guide channels extends axially onto the second ceramic component, with its air inlet end and air outlet end connected to the first central groove and the second central groove, respectively. Each of the central axial holes extends axially in the first ceramic component, and its air inlet and air outlet are respectively connected to the central groove and the reaction chamber.

[0007] Optionally, the edge air guide includes a third guide channel, an edge groove one, an edge groove two, a plurality of fourth guide channels arranged at intervals along the circumference, and a plurality of edge axial holes arranged at intervals along the circumference. The third guide channel is axially disposed on the third ceramic component, and its air inlet end is connected to the second gas source. The edge groove extends circumferentially and is connected to the third guide channel on the third ceramic component; The second edge groove extends circumferentially and is provided on the second ceramic part; Each of the fourth guide channels is disposed on the second ceramic component, and its air inlet end and air outlet end are respectively connected to the first edge groove and the second edge groove; Each of the aforementioned edge axial holes extends axially on the first ceramic component, with its air inlet and air outlet connected to the edge groove and the reaction chamber, respectively.

[0008] Optionally, the air intake structure for wafer processing further includes a shielding member disposed in the edge groove II. The shielding member includes a plurality of shielding portions arranged circumferentially and a plurality of radial driving portions corresponding to each of the shielding portions. The bottom of each of the shielding parts is slidably connected to the top of the first ceramic part, and a shielding axial hole with a matching diameter is provided on it for connecting the edge groove and each of the edge axial holes. Each of the radial driving parts is connected to each of the shielding parts to drive the shielding parts to move radially and adjust the shielding axial hole to intermittently connect with the multiple edge axial holes on the same radial line.

[0009] Optionally, each of the shielding portions is provided with a plurality of shielding axial holes on the same radial line, and the radial distance between two adjacent shielding axial holes is consistent with the radial distance between two adjacent edge axial holes on the same radial line, so that the radial movement of the shielding portion can simultaneously connect the plurality of shielding axial holes on the same radial line and the plurality of edge axial holes on the same radial line. And / or, each of the shielding portions is provided with a plurality of shielding axial holes on the same circumferential line, and the circumferential distance between two adjacent shielding axial holes is consistent with the circumferential distance between two adjacent edge axial holes on the same circumferential line, so that the radial movement of the shielding portion causes the plurality of shielding axial holes on the same circumferential line and the plurality of edge axial holes on the same circumferential line to connect simultaneously.

[0010] Optionally, each of the shielding portions is provided with a plurality of shielding axial holes on the same circumferential line and the same radial line, and the circumferential distance between two adjacent shielding axial holes on the same circumferential line and the radial distance between two adjacent shielding axial holes on the same radial line are both greater than the diameter of the edge axial hole.

[0011] Optionally, each of the radial driving units includes a first driving unit, an elastic connector, and a plurality of second driving units arranged radially at intervals; The first driving part is disposed on the shielding part, and a plurality of second driving parts are disposed on the top of the first ceramic part. The first driving part and the plurality of second driving parts are respectively connected to an independent power supply. By controlling the power on and off of each second driving part, the first driving part is attracted to drive the shielding part to move radially. One end of the elastic connector is fixed to the shielding part, and the other end extends radially and is fixed to the inner wall of the edge groove, so as to lengthen or shorten with the radial movement of the shielding part.

[0012] Optionally, the air intake structure for wafer processing further includes a plurality of flow regulating components disposed in the edge groove II and corresponding one-to-one with the shielding portion, and each of the flow regulating components includes an axial driving portion, a connecting portion and a blocking portion. At least a portion of the blocking part extends from the air inlet end into the blocking axial hole, so that a flow passage is formed between the circumferential outer wall of the blocking part and the circumferential inner wall of the blocking axial hole, and the blocking area of ​​the blocking part decreases toward the air outlet end closer to the blocking axial hole. The axial drive unit is located on the shielding part and is connected to the blocking part through the connecting part. By controlling the movement of the blocking part toward or away from the outlet end of the shielding axial hole, the gas flow rate through the flow channel is adjusted.

[0013] Optionally, the air intake structure for wafer processing further includes a first sealing element and a second sealing element, wherein the first sealing element extends circumferentially and is disposed in the gap between the second ceramic element and the heating element for sealing the gap; The second seal extends circumferentially between the bottom of the heating element and the top of the reaction chamber for sealing the area between the bottom of the heating element and the top of the reaction chamber.

[0014] Optionally, the air intake structure for wafer processing further includes an inner liner; the inner liner extends circumferentially at the bottom of the heating element and surrounds the window, the heating stage, and the wafer on it.

[0015] Optionally, the air intake structure for wafer processing further includes process parameter detection components and temperature detection components; The air intake mechanism has a detection hole that runs through it along the axial direction and is connected to the reaction chamber. The process parameter detection device is located on the outside of the air intake mechanism with its detection end facing the wafer to detect the process level of the wafer. The temperature detection device is located inside the detection hole to detect the temperature on the air intake mechanism in real time.

[0016] To achieve the above objectives, the present invention also provides a semiconductor processing apparatus, including a reaction chamber, an induction coil, and the aforementioned wafer processing air intake structure, wherein the wafer processing air intake structure is disposed at the top of the reaction chamber, and the induction coil is arranged around the outside of the reaction chamber.

[0017] The beneficial effects of this invention are as follows: This invention addresses the shortcomings of existing center-inlet structures, such as limited flow field control capabilities, difficulty in achieving uniform etching between the wafer's central and edge regions, and inability to adapt to long-term stable operation of high-power, high-temperature processes. By setting up an inlet mechanism covering the hot stage and the wafer projection area, and combining it with a center gas guide that independently connects the first and second gas sources and an outer-circling edge gas guide, the plasma injection rate in the wafer's central and edge regions can be differentially controlled, effectively solving the problems of poor etching rate and morphology consistency on the wafer's upper surface caused by traditional inlet structures. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device in some embodiments of the present invention; Figure 2 for Figure 1 An enlarged schematic diagram of the structure at position A in the diagram.

[0019] Explanation of reference numerals in the attached figures: 1. Reaction chamber; 2. Heating platform; 3. Liner; 4. Air inlet mechanism; 41. Heating element; 42. First ceramic component; 43. Second ceramic component; 44. Third ceramic component; 5. Central air guide; 51. First guide channel; 52. Central groove one; 53. Second guide channel; 54. Central groove two; 55. Central axial hole; 6. Edge air guide; 61. Third guide channel; 62. Edge groove one; 63. Fourth guide channel; 64. Edge groove two; 65. 7. Edge axial hole; 8. First seal; 9. Second seal; 10. Process parameter detection component; 11. Temperature detection component; 12. Detection hole; 13. Shielding component; 14. Shielding part; 15. Shielding axial hole; 16. Radial drive part; 17. First drive part; 18. Second drive part; 19. Elastic connector; 10. Flow regulating component; 11. Axial drive part; 12. Connecting part; 13. Blocking part. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0021] This invention relates to an air intake structure for wafer processing and a semiconductor processing device. The purpose is to improve the uniformity of the etching surface, expand the process window, and ensure the long-term reliable operation of the equipment by differentially controlling the plasma flow rate in the central and edge regions of the wafer through a zoned independent center and edge gas guide design.

[0022] To address the problems existing in the prior art, embodiments of the present invention provide an air intake structure for wafer processing, such as... Figure 1 The gas intake structure for wafer processing includes a gas intake mechanism 4, a central gas guide 5, and an edge gas guide 6.

[0023] In some embodiments, such as Figure 1As shown, the air intake mechanism 4 is located at the top of the reaction chamber 1. The orthographic projection of the air intake mechanism 4 on the inner bottom wall of the reaction chamber 1 covers the orthographic projection of the hot stage 2 located inside the reaction chamber 1 and the wafer on its top on the inner bottom wall of the reaction chamber 1. This structurally ensures that the introduced plasma can cover the entire wafer surface without any blind spots, avoiding the problem of insufficient gas supply to the wafer edge area due to insufficient air intake range.

[0024] In some embodiments, such as Figure 1 As shown, the central gas guide 5 is disposed on the gas inlet mechanism 4 and its outlet end faces the central region of the wafer, so that the plasma generated after being connected to the external first gas source is guided to the central region; the edge gas guide 6 is disposed on the gas inlet mechanism 4 and its outlet end is arranged around the outside of the outlet end of the central gas guide 5 and faces the edge region of the wafer, so that the plasma generated after being connected to the external second gas source is guided to the edge region.

[0025] This configuration enables independent and differentiated plasma supply to the wafer's central and edge regions, allowing for targeted matching of the different reaction requirements of these regions during etching or deposition processes. On one hand, it allows for independent adjustment of the plasma flow rate and composition ratio in the central and edge regions, effectively correcting issues such as uneven etching or deposition rates and morphology deviations on the wafer's surface caused by traditional single-path gas intake, thus improving process consistency. On the other hand, the independent conduction design of the central gas guide 5 and the edge gas guide 6 can control interference from premature mixing of the two process gases. Furthermore, it allows for flexible adjustment of gas parameters in the central and edge gas guides according to the process stage, significantly expanding the process window and adapting to the stringent requirements of high-precision processes for uniformity across the entire wafer surface.

[0026] In some embodiments, such as Figure 1 As shown, the air intake mechanism 4 includes a heating element 41, a first ceramic element 42, a second ceramic element 43, and a third ceramic element 44.

[0027] In some embodiments, such as Figure 1 As shown, the heating element 41 is located at the top of the reaction chamber 1, and a window is provided through it along the axial direction. The inner sidewall of the window is recessed with a support groove extending circumferentially near its air inlet end. The heating element 41 provides a heating base for the entire air inlet mechanism 4.

[0028] In some embodiments, the heating element 41 can be a ring-shaped resistance heating structure surrounding the window, or a ceramic heating body with embedded heating wire. Its heating temperature can be precisely controlled according to process requirements, providing a uniform and stable heat source for the air intake mechanism 4, avoiding gas pre-reaction or condensation caused by local temperature differences, and adapting to the requirements of different processes on the top thermal field of the reaction chamber 1. At the same time, the structural design of the heating element 41 cooperates with the support groove and the window, achieving stable installation without obstructing the axial flow of gas, balancing the heating function and the integrity of the air intake channel, and ensuring the long-term reliable operation of the air intake structure under high-temperature process scenarios.

[0029] In some embodiments, such as Figure 1 As shown, the first ceramic component 42 is disposed in the support groove and blocks the air inlet end of the window.

[0030] In some embodiments, such as Figure 1 As shown, the second ceramic component 43 is disposed on top of the first ceramic component 42, and there is a gap between the bottom of the second ceramic component 43 and the top of the heating component 41, so that the heat generated by the heating component 41 is conducted to the second ceramic component 43 through the first ceramic component 42.

[0031] By reserving a gap between the second ceramic component 43 and the top of the heating component 41, a stepped heat conduction path is constructed, allowing the heat from the heating component 41 to first pass through the first ceramic component 42 and then be transferred to the second ceramic component 43. This avoids the high temperature of the heating component 41 directly concentrating on the second ceramic component 43, which could cause uneven heating and cracking, thus extending the service life of the ceramic component.

[0032] In some embodiments, such as Figure 1 As shown, the third ceramic component 44 is disposed on top of the second ceramic component 43.

[0033] In some embodiments, the first ceramic component 42, the second ceramic component 43, and the third ceramic component 44 are preferably circular plate structures adapted to the window and the support groove. When the three are coaxially stacked, they can form a complete and regular air intake channel carrier, which can closely match the annular installation space at the top of the reaction chamber 1 and ensure the assembly stability of the overall structure.

[0034] In some embodiments, such as Figure 1 As shown, the central air guide 5 includes a first guide channel 51, a central groove 1 52, a central groove 2 54, a plurality of second guide channels 53 arranged at intervals along the circumference, and a plurality of central axial holes 55 arranged at intervals along the circumference.

[0035] In some embodiments, such as Figure 1As shown, the first guide channel 51 is axially disposed on the third ceramic component 44, and its air inlet end is connected to the first gas source. The first guide channel 51 is preferably a through hole.

[0036] In some embodiments, such as Figure 1 As shown, the first central groove 52 extends circumferentially and is connected to the first guide channel 51 on the third ceramic component 44; the cavity of the first central groove 52 is preferably annular, and the radial distance of the cavity of the first central groove 52 is greater than the inner diameter of the first guide channel 51. The second central groove 54 extends circumferentially on the second ceramic component 43; the cavity of the second central groove 54 is preferably annular. Each second guide channel 53 extends axially on the second ceramic component 43, and its inlet and outlet ends are respectively connected to the first central groove 52 and the second central groove 54; the inner diameter of each second guide channel 53 is smaller than the radial distance of the cavities of the first central groove 52 and the second central groove 54. Each central axial hole 55 extends axially on the first ceramic component 42, and its inlet and outlet ends are respectively connected to the second central groove 54 and the reaction chamber 1.

[0037] Through a multi-stage flow distribution structure consisting of a first guide channel 51, an annular central groove 52, a circumferentially distributed second guide channel 53, an annular central groove 54, and circumferentially distributed central axial holes 55, the gas input from a single point is first buffered and pressure-equalized by the wide-diameter central groove 52 to eliminate flow velocity fluctuations at the inlet. Then, the gas is uniformly transported downwards through the second guide channel 53 to the central groove 54 for secondary pressure stabilization. Finally, the gas is synchronously ejected into the central region of the wafer through each central axial hole 55. This avoids the problems of uneven gas distribution and excessively high local flow velocity in the central region caused by a single direct-flow gas guide. Furthermore, the pressure stabilization and buffering of the two-stage annular groove cavity ensures that the gas flow rate and pressure of all central axial holes 55 are consistent, greatly improving the uniformity of gas coverage in the central region of the wafer and providing a reliable flow field basis for the consistency of the wafer surface during etching, deposition, and other processes.

[0038] In some embodiments, such as Figure 1 As shown, the edge air guide 6 includes a third guide channel 61, an edge groove 1 62, an edge groove 2 64, a plurality of fourth guide channels 63 arranged at intervals along the circumference, and a plurality of edge axial holes 65 arranged at intervals along the circumference.

[0039] In some embodiments, such as Figure 1 As shown, the third guide channel 61 is axially disposed on the third ceramic component 44, and its air inlet end is connected to the second gas source.

[0040] In some embodiments, such as Figure 1As shown, the first edge groove 62 extends circumferentially and is connected to the third guide channel 61 on the third ceramic component 44; the cavity of the first edge groove 62 is preferably annular; and the radial distance of the cavity of the first edge groove 62 is greater than the inner diameter of the third guide channel 61. The second edge groove 64 extends circumferentially on the second ceramic component 43, and the cavity of the second edge groove 64 is preferably annular. Each of the fourth guide channels 63 is located on the second ceramic component 43, and its inlet and outlet ends are respectively connected to the first edge groove 62 and the second edge groove 64; the inner diameter of each of the fourth guide channels 63 is smaller than the radial distance of the cavities of the first edge groove 62 and the second edge groove 64. Each of the axial edge holes 65 extends axially on the first ceramic component 42, and its inlet and outlet ends are respectively connected to the second edge groove 64 and the reaction chamber 1.

[0041] Through a graded flow distribution structure consisting of "third guide channel 61, wide-diameter annular edge groove 62, multiple sets of fourth guide channels 63, wide-diameter annular edge groove 64, and circumferentially distributed edge axial holes 65", the edge air intake is first buffered and stabilized circumferentially by the edge groove 62, whose radial dimension is larger than the inner diameter of the third guide channel 61, eliminating flow rate fluctuations and pressure unevenness at single-point air intake. Then, the gas is uniformly delivered downward to the edge groove 64 by the fourth guide channel 63, whose inner diameter is smaller than the groove cavity, for secondary pressure stabilization. Finally, the gas is uniformly injected into the wafer edge region synchronously by each edge axial hole 65. This not only avoids the problem of excessive local flow and uneven distribution caused by direct gas flow in the edge region, but also ensures that the gas flow rate and pressure of all edge axial holes 65 are consistent through the buffering and stabilization of the two-stage wide groove cavity and the multi-stage flow distribution design, which greatly improves the gas coverage uniformity of the wafer edge region and effectively corrects the deviation of wafer edge etching and deposition rate.

[0042] In some embodiments, such as Figure 2 As shown, the air intake structure for wafer processing also includes a shielding member 12 disposed in the edge groove 64. The shielding member 12 includes a plurality of shielding portions 121 arranged circumferentially and a plurality of radial driving portions 123 disposed in a one-to-one correspondence with each of the shielding portions 121.

[0043] In some embodiments, such as Figure 2 As shown, the bottom of each of the shielding parts 121 is slidably connected to the top of the first ceramic part 42, and a shielding axial hole 122 with a matching diameter is provided on it for connecting the edge groove 64 and each of the edge axial holes 65. Each of the radial driving parts 123 is connected to each of the shielding parts 121 to drive the shielding part 121 to move radially and adjust the shielding axial hole 122 to intermittently communicate with the multiple edge axial holes 65 on the same radial line.

[0044] This embodiment allows for flexible adjustment of the overlap between the shielding axial hole 122 and the edge axial hole 65 by radially sliding the shielding part 121 on the top of the first ceramic part 42. This enables dynamic control of gas flow and interruption at different radial positions on the wafer edge. On one hand, it can selectively open or close the edge axial hole 65 in specific radial areas based on etching or deposition uniformity deviations in the wafer edge region during actual processes. This precisely corrects local process differences in the edge region, adapting to the differentiated needs of wafers of different sizes and different process steps without requiring hardware replacement. On the other hand, the intermittent connection design allows for fine-tuning of local abnormal areas while ensuring basic gas supply across the entire edge region. This avoids process fluctuations in the central region caused by overall gas parameter adjustments, significantly improving the precision and flexibility of process control in the edge region.

[0045] In some embodiments, the shape of the shielding part 121 is preferably an arc-shaped plate structure adapted to the annular structure of the edge groove 64. Its curvature is consistent with the groove curvature of the edge groove 64 at the location. It can always fit the top of the first ceramic part 42 during the sliding process, which not only ensures the sealing between it and the edge groove 64 and prevents gas from leaking from the gap, but also does not affect the smoothness of sliding due to the interference of the edges.

[0046] In some embodiments, each of the shielding portions 121 is provided with a plurality of shielding axial holes 122 on the same radial line, and the radial distance between two adjacent shielding axial holes 122 is consistent with the radial distance between two adjacent edge axial holes 65 on the same radial line, so that the radial movement of the shielding portion 121 causes the plurality of shielding axial holes 122 on the same radial line and the plurality of edge axial holes 65 on the same radial line to communicate simultaneously.

[0047] The precise matching of the radial spacing between the shielding axial holes 122 and the edge axial holes 65 allows multiple shielding axial holes 122 on the same radial line to be synchronously aligned and connected or staggered and cut off with the corresponding multiple edge axial holes 65 when the shielding part 121 moves radially. This avoids the adjustment deviation and alignment failure problems that are easy to occur when aligning a single hole, and can also complete the synchronous on / off control of multiple edge axial holes 65 on the same radial line at one time, which greatly improves the efficiency and accuracy of radial flow regulation in the edge region. At the same time, the design of synchronous matching of multiple apertures can ensure that the wafer region at the same radial position receives uniform gas supply, avoid uneven etching or deposition caused by local gas shortage or over-gas, and make the process correction in the edge region more regular and predictable. It can quickly match the requirements of different processes for edge radial gas distribution without repeated debugging.

[0048] In some embodiments, each of the shielding portions 121 is provided with a plurality of shielding axial holes 122 on the same circumferential line, and the circumferential distance between two adjacent shielding axial holes 122 is consistent with the circumferential distance between two adjacent edge axial holes 65 on the same circumferential line, so that the radial movement of the shielding portion 121 causes the plurality of shielding axial holes 122 on the same circumferential line and the plurality of edge axial holes 65 on the same circumferential line to communicate simultaneously.

[0049] By precisely matching the circumferential spacing of the shielding axial holes 122 and the edge axial holes 65, multiple shielding axial holes 122 on the same circumferential line can be synchronously aligned and connected or staggered and cut off with the corresponding multiple edge axial holes 65 when the shielding part 121 moves radially. This avoids the deviation risk of single hole alignment and can simultaneously complete the synchronous on / off control of multiple axial holes on the same circumferential ring, greatly improving the efficiency and consistency of circumferential flow regulation in the edge region. This design can ensure that the gas supply at the same circumferential position in the wafer edge region is uniform and stable, effectively eliminating the problems of uneven circumferential airflow and local process deviation that are easy to occur in traditional regulation methods. It allows the etching or deposition rate in the edge region to remain highly consistent on the same ring. At the same time, in conjunction with the radial adjustment function, it can realize fine airflow control in the two dimensions of "radial and circumferential" in the edge region.

[0050] In some embodiments, each of the shielding portions 121 is provided with a plurality of shielding axial holes 122 on the same circumferential line and the same radial line, and the circumferential distance between two adjacent shielding axial holes 122 on the same circumferential line and the radial distance between two adjacent shielding axial holes 122 on the same radial line are both greater than the diameter of the edge axial hole 65.

[0051] Multiple sets of circumferential and radial blocking axial holes 122 are simultaneously arranged on the blocking part 121, and the spacing between adjacent blocking axial holes 122 is greater than the diameter of the edge axial holes 65, which can realize array-type matching adjustment of "multiple holes to multiple holes". On the one hand, when the blocking part 121 moves radially, it can simultaneously control the connection state of multiple axial holes on the same radial line, and simultaneously cover the connection state of multiple axial holes on the same circumferential line, realizing the linkage adjustment of the "radial and circumferential" two-dimensional dimension of the edge region, which greatly improves the ability to correct the deviation of complex flow field in the edge region. On the other hand, the hole spacing design that is greater than the diameter of the edge axial holes 65 allows the blocking part 121 to switch between three states of complete misalignment, partial overlap and complete connection between the blocking axial holes 122 and the edge axial holes 65 when moving radially with a small stroke. This not only improves the control accuracy of flow regulation, but also avoids mutual interference between adjacent axial holes, ensuring that there will be no sudden increase or interruption of airflow during the adjustment process, making the gradient adjustment of edge airflow smoother and more controllable.

[0052] In some embodiments, such as Figure 2 As shown, each of the radial driving parts 123 includes a first driving part 1231, an elastic connector 1233, and a plurality of second driving parts 1232 arranged radially at intervals; the plurality of second driving parts 1232 are preferably arranged radially at equal intervals. The first driving part 1231 is disposed on the shielding part 121, and the plurality of second driving parts 1232 are disposed on the top of the first ceramic part 42. The first driving part 1231 and the plurality of second driving parts 1232 are respectively connected to an independent power supply. By controlling the on and off of power to each of the second driving parts 1232, the first driving part 1231 is attracted to move the shielding part 121 radially. One end of the elastic connector 1233 is fixed to the shielding part 121, and the other end extends radially and is fixed to the inner sidewall of the edge groove 64, so as to lengthen or shorten with the radial movement of the shielding part 121.

[0053] This embodiment achieves precise radial displacement of the shielding part 121 through electromagnetic adsorption between the first driving unit 1231 and multiple radially spaced second driving units 1232. This eliminates the need for complex mechanical transmission structures, avoiding the problems of jamming and failure of traditional mechanical transmission components in high-temperature and plasma corrosion environments, significantly improving the reliability and environmental adaptability of the driving structure. The independent power-on / off control of the multiple second driving units 1232 allows for flexible adjustment of the adsorption force's position, enabling step-by-step precise positioning of the shielding part 121 to meet different adjustment accuracy requirements. Simultaneously, the elastic connector 1233 provides a reset force when power is off, ensuring the shielding part 121 returns to its initial position. It also buffers the adsorption impact during movement, preventing hard collision damage between the shielding part 121 and the edge groove 64. Combined with non-contact electromagnetic drive, this further reduces motion wear and particle generation, meeting the high cleanliness requirements of semiconductor processes and ensuring long-term stable and controllable edge airflow regulation.

[0054] In some embodiments, the elastic connector 1233 may be a high-temperature resistant spring steel sheet or a beryllium copper alloy spring sheet, or it may be a non-magnetized ceramic fiber elastic element.

[0055] It is worth noting that the radial adjustment amplitudes of the radial drive units 123 on the shielding units 121 can be consistent or inconsistent; this differentiated adjustment design can flexibly adapt to the uniformity deviation characteristics of different regions at the edge of the wafer. When there is a uniformity shift in the plasma as a whole in the edge region, all shielding units 121 can be controlled to move synchronously to achieve unified calibration of the flow rate across the entire edge region; when only a local area (such as a certain circumferential section or a specific radial position) experiences a process anomaly, the shielding unit 121 at the corresponding position can be adjusted individually to specifically correct the local deviation, avoiding unnecessary disturbances caused by "global adjustment", and further improving the flexibility and accuracy of flow field control in the edge region.

[0056] In some embodiments, such as Figure 2 As shown, the air intake structure for wafer processing also includes a plurality of flow regulating components 13 disposed within the edge groove 64 and corresponding one-to-one with the shielding portion 121, and each of the flow regulating components 13 includes an axial drive portion 131, a connecting portion 132, and a blocking portion 133. The axial drive portion 131 is preferably a miniature linear stepper motor, but a piezoelectric ceramic driver or a magnetostrictive driver can also be used.

[0057] In some embodiments, such as Figure 2 As shown, at least a portion of the blocking portion 133 extends from the air inlet end into the blocking axial hole 122, so that a flow channel is formed between the circumferential outer wall of the blocking portion 133 and the circumferential inner wall of the blocking axial hole 122, and the blocking area of ​​the blocking portion 133 decreases towards the air outlet end of the blocking axial hole 122. The structure of the blocking portion 133 is preferably a frustum-shaped cone with a gradually decreasing cross-sectional area from top to bottom.

[0058] In some embodiments, such as Figure 2 As shown, the axial drive unit 131 is provided on the shielding part 121 and is connected to the blocking part 133 through the connecting part 132, so as to adjust the gas flow rate through the flow channel by controlling the blocking part 133 to move toward or away from the gas outlet end of the shielding axial hole 122.

[0059] The axial drive unit 131 is integrated on the shielding unit 121 and can move synchronously with the radial adjustment of the shielding unit 121, realizing two-dimensional coordinated control of "radial positioning and axial adjustment". There is no need to set up a separate displacement structure for flow regulation, which simplifies the overall layout and ensures that the flow regulation always acts on the currently selected edge area, making the control more targeted. Through the micron-level displacement of the blocking unit 133 along the axial direction, the ventilation cross section of the flow channel can be continuously changed, realizing stepless and precise adjustment of gas flux. Compared with the traditional on / off control, it can more delicately correct local process deviations in the edge area and avoid process fluctuations caused by sudden changes in flow.

[0060] In some embodiments, such as Figure 1 As shown, the gas intake structure for wafer processing also includes a first sealing element 7 and a second sealing element 8. The first sealing element 7 extends circumferentially within the gap between the second ceramic element 43 and the heating element 41 to seal the gap. The second sealing element 8 extends circumferentially between the bottom of the heating element 41 and the top of the reaction chamber 1 to seal the space between the bottom of the heating element 41 and the top of the reaction chamber 1.

[0061] The first sealing element 7 seals the gap between the second ceramic component 43 and the heating element 41, blocking the path of process gas leakage to non-circulation areas and preventing gas from entering the assembly gap between the heating element 41 and the second ceramic component 43, causing residue, corrosion, or pre-reaction. It also prevents external impurities from entering and contaminating the reaction chamber through the gap, while reducing heat loss within the gap and ensuring the uniformity of the thermal field of the air intake mechanism 4. The second sealing element 8 achieves a reliable seal between the heating element 41 and the top of the reaction chamber 1, preventing process gas and plasma in the reaction chamber 1 from overflowing to the outside of the equipment. At the same time, it isolates the high temperature and corrosive atmosphere in the reaction chamber 1 from eroding the top mounting structure. The dual sealing structures work together to ensure the airtightness and process cleanliness of the air intake system, while extending the service life of the heating element 41 and its supporting structures, providing reliable sealing protection for the stable operation of high temperature and high pressure processes.

[0062] In some embodiments, both the first seal 7 and the second seal 8 are preferably annular in shape.

[0063] In some embodiments, such as Figure 1 As shown, the gas inlet structure for wafer processing also includes an inner liner 3; the inner liner 3 extends circumferentially at the bottom of the heating element 41 and surrounds the window, the heating stage 2, and the outer side of the wafer on it. It is noteworthy that the orthographic projection of the heating stage 2 onto the inner wall of the reaction chamber 1 partially overlaps with the orthographic projection of the inner liner 3 onto the inner wall of the reaction chamber 1.

[0064] The inner liner 3, with its design, forms a ring-shaped protective barrier around the window, the heating stage 2, and the wafer. On the one hand, it can prevent plasma and process byproducts in the reaction chamber 1 from being directly sputtered and deposited on the bottom of the heating element 41 and the inner wall of the reaction chamber 1, thus avoiding corrosion or scaling of critical components, significantly reducing the frequency of cleaning and maintenance, and extending the service life of components. On the other hand, its circumferential structure can optimize the flow field and heat field distribution in the cavity, reduce gas turbulence in the edge area, and prevent excessive heat loss from the wafer edge, ensuring the temperature stability of the process. In addition, as a replaceable consumable, the inner liner 3 can be replaced only when the surface is damaged, without disassembling and repairing the core air intake mechanism 4 and the heating element 41, which significantly reduces the equipment's operation and maintenance costs and downtime.

[0065] In some embodiments, such as Figure 1As shown, the wafer processing air intake structure further includes a process parameter detection element 9 and a temperature detection element 10. The air intake mechanism 4 has an axially extending detection hole 11 connected to the reaction chamber 1. The process parameter detection element 9 is located on the outside of the air intake mechanism 4, with its detection end facing the wafer, for detecting the wafer's processing level. The temperature detection element 10 is located inside the detection hole 11 for real-time temperature detection on the air intake mechanism 4. A control module is also included. The process parameter detection element 9, the temperature detection element 10, the first gas source, the second gas source, the radial drive unit 123, and the axial drive unit 131 are all connected to the control module. The control module controls the first gas source, the second gas source, the radial drive unit 123, and the axial drive unit 131 based on the information collected by the process parameter detection element 9 and the temperature detection element 10.

[0066] The process parameter detection device 9 monitors the wafer etching or deposition progress in real time, and the temperature detection device 10 synchronously feeds back the temperature status of the gas intake mechanism 4. The control module dynamically adjusts the gas supply parameters of the first gas source and the second gas source based on these two types of real-time data, and at the same time precisely controls the actions of the radial drive unit 123 and the axial drive unit 131. This not only compensates for gas flow in a timely manner when the temperature fluctuates and ensures process stability, but also automatically adjusts the gas distribution in the edge area according to the actual process uniformity deviation of the wafer. The entire process of "detection, feedback and adjustment" can be automated without manual intervention. This design greatly reduces human operation error, improves process repeatability and consistency, can quickly adapt to the process requirements of different processes and wafers of different specifications, and can also trigger adjustment strategies in a timely manner under abnormal operating conditions to reduce the generation of defective products, further improving the intelligence level and production efficiency of the equipment.

[0067] In some embodiments, the process parameter detection device 9 is preferably an optical emission spectrometer, a laser interferometer, or an endpoint detection sensor. Its detection end faces the upper surface of the wafer through the detection hole 11. It can collect the reactive emission spectrum, film thickness change, or etching endpoint signal of the wafer surface in real time without contacting the wafer or interfering with the process environment in the reaction chamber 1, and accurately feedback the process progress and uniformity of etching or deposition.

[0068] In some embodiments, the temperature sensing element 10 is preferably a thermocouple or a fiber optic temperature sensor, both of which have the characteristics of high temperature resistance and plasma corrosion resistance, and can be stably embedded in the detection hole 11 to monitor the temperature distribution of the air intake mechanism 4 in real time.

[0069] To address the problems existing in the prior art, embodiments of the present invention also provide a semiconductor processing apparatus, such as... Figure 1As shown, the semiconductor processing equipment includes a reaction chamber 1, an induction coil, and the aforementioned wafer processing air intake structure. The wafer processing air intake structure is located at the top of the reaction chamber 1, and the induction coil is arranged around the outside of the reaction chamber 1.

[0070] In some embodiments, the semiconductor processing equipment includes mainstream process equipment such as etching equipment and deposition equipment. Specifically, the aforementioned gas inlet structure for wafer processing can be adapted for use in scenarios where precise gas distribution is required at the top of the reaction chamber, such as capacitively coupled plasma etching machines, inductively coupled plasma etching machines, atomic layer deposition equipment, and chemical vapor deposition equipment. With its independent gas guiding design with center and edge partitions, dynamically adjustable edge flow control mechanism, and heating and sealing structure adapted to high-temperature processes, the gas inlet structure can effectively solve industry pain points commonly found in such equipment, such as poor uniformity of in-wafer etching or deposition, narrow process window, and unstable operation under high-power conditions.

[0071] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. An air intake structure for wafer processing, characterized in that, include: An air intake mechanism is located at the top of the reaction chamber. The orthographic projection structure of the air intake mechanism on the inner bottom wall of the reaction chamber covers the orthographic projection structure of the hot stage located inside the reaction chamber and the wafer on its top on the inner bottom wall of the reaction chamber. A central gas guide is provided on the gas inlet mechanism with its outlet facing the central region of the wafer, so that the plasma generated after being connected to the external first gas source will be guided to the central region. An edge gas guide is provided on the gas inlet mechanism, and its gas outlet is arranged around the outside of the gas outlet of the central gas guide and facing the edge region of the wafer, so that the plasma generated after being connected to the external second gas source is guided to the edge region.

2. The gas inlet structure for wafer processing according to claim 1, characterized in that, The air intake mechanism includes a heating element, a first ceramic element, a second ceramic element, and a third ceramic element; The heating element is located at the top of the reaction chamber, and a window is provided through it along the axial direction. The inner sidewall of the window is recessed with a support groove extending circumferentially near its air inlet end. The first ceramic component is disposed within the support groove and blocks the air inlet of the window; The second ceramic component is disposed on top of the first ceramic component, and there is a gap between the bottom of the second ceramic component and the top of the heating component, so that the heat generated by the heating component can be conducted to the second ceramic component through the first ceramic component. The third ceramic component is disposed on top of the second ceramic component.

3. The gas inlet structure for wafer processing according to claim 2, characterized in that, The central air guide includes a first guide channel, a central groove one, a central groove two, a number of second guide channels arranged at intervals along the circumference, and a number of central axial holes arranged at intervals along the circumference. The first guide channel is axially disposed on the third ceramic component, and its air inlet end is connected to the first gas source; The central groove extends circumferentially and is connected to the first guide channel on the third ceramic component; The second central groove extends circumferentially and is disposed on the second ceramic component; Each of the second guide channels extends axially onto the second ceramic component, with its air inlet end and air outlet end connected to the first central groove and the second central groove, respectively. Each of the central axial holes extends axially in the first ceramic component, and its air inlet and air outlet are respectively connected to the central groove and the reaction chamber.

4. The gas inlet structure for wafer processing according to claim 2, characterized in that, The edge air guide includes a third guide channel, an edge groove one, an edge groove two, a number of fourth guide channels arranged at intervals along the circumference, and a number of edge axial holes arranged at intervals along the circumference. The third guide channel is axially disposed on the third ceramic component, and its air inlet end is connected to the second gas source. The edge groove extends circumferentially and is connected to the third guide channel on the third ceramic component; The second edge groove extends circumferentially and is provided on the second ceramic part; Each of the fourth guide channels is disposed on the second ceramic component, and its air inlet end and air outlet end are respectively connected to the first edge groove and the second edge groove; Each of the aforementioned edge axial holes extends axially on the first ceramic component, with its air inlet and air outlet connected to the edge groove and the reaction chamber, respectively.

5. The gas inlet structure for wafer processing according to claim 4, characterized in that, It also includes a blocking member disposed in the second edge groove, the blocking member comprising a plurality of blocking parts arranged circumferentially and a plurality of radial driving parts corresponding one-to-one with each of the blocking parts; The bottom of each of the shielding parts is slidably connected to the top of the first ceramic part, and a shielding axial hole with a matching diameter is provided on it for connecting the edge groove and each of the edge axial holes. Each of the radial driving parts is connected to each of the shielding parts to drive the shielding parts to move radially and adjust the shielding axial hole to intermittently connect with the multiple edge axial holes on the same radial line.

6. The gas inlet structure for wafer processing according to claim 5, characterized in that, Each of the shielding parts is provided with a plurality of shielding axial holes on the same radial line. The radial distance between two adjacent shielding axial holes is the same as the radial distance between two adjacent edge axial holes on the same radial line, so that the radial movement of the shielding part can simultaneously connect the plurality of shielding axial holes on the same radial line and the plurality of edge axial holes on the same radial line. And / or, each of the shielding portions is provided with a plurality of shielding axial holes on the same circumferential line, and the circumferential distance between two adjacent shielding axial holes is consistent with the circumferential distance between two adjacent edge axial holes on the same circumferential line, so that the radial movement of the shielding portion causes the plurality of shielding axial holes on the same circumferential line and the plurality of edge axial holes on the same circumferential line to connect simultaneously.

7. The gas inlet structure for wafer processing according to claim 5, characterized in that, Each of the aforementioned shielding portions is provided with a plurality of shielding axial holes on the same circumferential line and the same radial line, and the circumferential distance between two adjacent shielding axial holes on the same circumferential line and the radial distance between two adjacent shielding axial holes on the same radial line are both greater than the diameter of the edge axial holes.

8. The gas inlet structure for wafer processing according to claim 5, characterized in that, Each of the radial drive units includes a first drive unit, an elastic connector, and a plurality of second drive units arranged radially at intervals; The first driving part is disposed on the shielding part, and a plurality of second driving parts are disposed on the top of the first ceramic part. The first driving part and the plurality of second driving parts are respectively connected to an independent power supply. By controlling the power on and off of each second driving part, the first driving part is attracted to drive the shielding part to move radially. One end of the elastic connector is fixed to the shielding part, and the other end extends radially and is fixed to the inner wall of the edge groove, so as to lengthen or shorten with the radial movement of the shielding part.

9. The gas inlet structure for wafer processing according to claim 5, characterized in that, It also includes a plurality of flow regulating components disposed in the edge groove II and corresponding one-to-one with the blocking part, and each of the flow regulating components includes an axial driving part, a connecting part and a blocking part; At least a portion of the blocking part extends from the air inlet end into the blocking axial hole, so that a flow passage is formed between the circumferential outer wall of the blocking part and the circumferential inner wall of the blocking axial hole, and the blocking area of ​​the blocking part decreases toward the air outlet end closer to the blocking axial hole. The axial drive unit is located on the shielding part and is connected to the blocking part through the connecting part. By controlling the movement of the blocking part toward or away from the outlet end of the shielding axial hole, the gas flow rate through the flow channel is adjusted.

10. The gas inlet structure for wafer processing according to claim 2, characterized in that, It also includes a first seal and a second seal, wherein the first seal extends circumferentially and is disposed in the gap between the second ceramic element and the heating element for sealing the gap; The second seal extends circumferentially between the bottom of the heating element and the top of the reaction chamber for sealing the area between the bottom of the heating element and the top of the reaction chamber.

11. The gas inlet structure for wafer processing according to claim 2, characterized in that, It also includes an inner liner; the inner liner extends circumferentially at the bottom of the heating element and surrounds the window and the heating stage and the wafer thereon.

12. The gas inlet structure for wafer processing according to claim 1, characterized in that, It also includes process parameter detection components and temperature detection components; The air intake mechanism has a detection hole that runs through it along the axial direction and is connected to the reaction chamber. The process parameter detection device is located on the outside of the air intake mechanism with its detection end facing the wafer to detect the process level of the wafer. The temperature detection device is located inside the detection hole to detect the temperature on the air intake mechanism in real time.

13. A semiconductor processing apparatus, characterized in that, The device includes a reaction chamber, an induction coil, and a wafer processing air intake structure as described in any one of claims 1 to 12, wherein the wafer processing air intake structure is disposed at the top of the reaction chamber, and the induction coil is disposed around the outside of the reaction chamber.

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