Cooling rate adjustment system to reduce particle impact and wafer staging apparatus

Abstract

This invention provides a cooling rate adjustment system and wafer temporary storage device to reduce the impact of particles. Both the contact temperature detection module and the non-contact temperature detection module include a sealed housing, a light-transmitting element, a cleaning element, and at least one temperature detection element. The temperature detection element is disposed inside the sealed housing, and the cleaning element is disposed outside the sealed housing for cleaning the light-transmitting element. The light-transmitting element protects the temperature detection element, and the cleaning element cleans the light-transmitting element. This reduces interference from particles during temperature detection. If the actual temperature difference between the contact area and the non-contact area is greater than a preset temperature difference, it indicates a very large actual temperature difference and a high probability of wafer fragmentation. Continuing to cool at the current rate will increase the actual temperature difference. Reducing the cooling rate of the wafer can reduce the actual temperature difference and decrease the probability of fragmentation. This reduces interference from particles on temperature detection and improves the accuracy of adjusting the cooling rate based on the actual temperature difference.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a cooling rate regulation system and wafer temporary storage device for reducing the impact of particles. Background Technology

[0002] In semiconductor manufacturing, some processes (such as chemical vapor deposition and resist removal) require heating the wafer to high temperatures. However, the processed wafers cannot be directly stored in wafer cassettes due to their excessively high temperature. Therefore, a separate chamber is needed to store and cool the high-temperature wafers to improve processing efficiency.

[0003] Currently, the wafer storage cavity is equipped with layers of aluminum plates. The wafer is placed on these aluminum plates, and the heat from the wafer surface is transferred through these aluminum plates to the bottom of the wafer storage cavity, where it is carried away by circulating cooling water. However, the aluminum plates in the wafer storage cavity need to have a certain amount of space to accommodate the shape of the robotic arm, i.e., the wafer pick-and-place port. Therefore, the aluminum plates cannot achieve complete contact with the wafer, resulting in contact and non-contact surfaces.

[0004] During wafer cooling, because the aluminum plate cannot fully contact the back side of the wafer, the cooling rates of the contact and non-contact surfaces of the wafer and aluminum plate differ under the same conditions, resulting in temperature differences between the contact and non-contact surfaces. Furthermore, as cooling progresses, the temperature difference between the contact and non-contact surfaces of the wafer and aluminum plate continuously increases, significantly increasing the probability of fragmentation.

[0005] The current mainstream temperature measurement method is indirect estimation, which involves using the surface temperatures of the heater and electrostatic chuck, combined with the transfer time and thermal conduction model, to infer the wafer temperature. However, this method suffers from problems such as large model errors, difficulty in calibration, and poor timeliness, and cannot effectively reduce the probability of fragmentation.

[0006] Therefore, it is necessary to provide a novel cooling rate regulation system and wafer temporary storage device that reduces the impact of particles in order to solve the above-mentioned problems existing in the prior art. Summary of the Invention

[0007] The purpose of this invention is to provide a cooling rate adjustment system and wafer storage device that reduce the influence of particles. This system can reduce the interference of particles in the wafer storage cavity on temperature detection, thereby improving the accuracy of temperature detection. By determining whether the cooling rate needs to be adjusted based on the temperature, the accuracy of cooling rate adjustment can be greatly improved. In turn, while ensuring the cooling rate, the probability of fragmentation caused by differences in cooling rate can be reduced.

[0008] To achieve the above objective, the cooling rate regulation system for reducing the impact of particles according to the present invention includes: Cooling rate adjustment unit, used to adjust the cooling rate of the wafer temporary storage cavity to the wafer; A temperature detection unit includes at least one contact temperature detection module and at least one non-contact temperature detection module. Both the contact and non-contact temperature detection modules include a sealed housing, a light-transmitting element, a cleaning element, and at least one temperature detection element. The sealed housing has a detection port on the side facing the wafer carrier. The light-transmitting element is disposed within the detection port. The temperature detection element is disposed within the sealed housing. The cleaning element is disposed near the detection port to clean the light-transmitting element. The temperature detection element of the contact temperature detection module is used to detect the temperature of the contact area where the wafer contacts the wafer carrier to obtain the contact temperature. The temperature detection element of the non-contact temperature detection module is used to detect the temperature of the non-contact area where the wafer does not contact the wafer carrier to obtain the non-contact temperature. The control unit, electrically connected to the cooling rate adjustment unit and all the temperature sensors, is used to obtain the actual temperature difference between the contact area and the non-contact area, compare the actual temperature difference with a preset temperature difference, and if the actual temperature difference is greater than the preset temperature difference, drive the cooling rate adjustment unit to reduce the cooling rate of the wafer temporary storage cavity to the wafer.

[0009] Optionally, the cleaning component includes a sealing isolation part and a cleaning part. The sealing isolation part is fixedly connected to the sealing housing around the detection port and forms an isolation cleaning cavity between the sealing housing and the sealing housing. The sealing isolation part controls the communication or isolation between the isolation cleaning cavity and the wafer temporary storage cavity. The cleaning part is at least partially disposed in the isolation cleaning cavity for cleaning the light-transmitting component.

[0010] Optionally, the cleaning unit includes a cleaning mechanism and a first driving mechanism. The cleaning mechanism includes a cleaning head and a reset strip. The cleaning head is made of a flexible polymer material. In its natural state, the cleaning head is flat and elongated. In its natural state, the reset strip is curled. The reset strip is disposed inside the cleaning head and is arranged along the length of the cleaning head, causing the cleaning head to curl. An air passage extending along the length of the cleaning head is provided inside the cleaning head. The first driving mechanism is connected to the air passage and is used to inflate or degas the air passage. When the first driving mechanism inflates the air passage, the air passage expands, and the force exerted by the air passage on the cleaning head is greater than the force exerted by the reset strip on the cleaning head, causing the cleaning head to straighten. When the first driving mechanism degassing the air passage, the air passage contracts, and the force exerted by the reset strip on the cleaning head is greater than the force exerted by the air passage on the cleaning head, causing the cleaning head to curl.

[0011] Optionally, the cleaning unit further includes a collection mechanism, which includes a collection head, a double telescopic sleeve, and a driver. The collection head is trumpet-shaped. The double telescopic sleeve includes a first collection tube, a second collection tube, a first power tube, a second power tube, and a first connecting rod. The two ends of the first connecting rod are fixedly connected to one end of the first collection tube and one end of the first power tube, respectively. The first collection tube and the first power tube are arranged parallel to each other. One end of the second collection tube is sleeved on the outside of the other end of the first collection tube to form a sliding seal connection. The other end of the second collection tube is connected to the driver. One end of the first collection tube communicates with the small opening of the collection head. The other end of the first power tube is sleeved on one end of the second power tube to form a sliding seal connection. One end of the first power tube is sealed. The other end of the second power tube is connected to the driver. The driver is used to generate negative or positive pressure in the first power tube and the second power tube to cause relative sliding between the first power tube and the second power tube, and to generate negative pressure in the first collection tube and the second collection tube.

[0012] Optionally, the cleaning unit includes a blowing mechanism, a power mechanism, a telescopic mechanism, and a second drive mechanism. The blowing mechanism includes a blowing head, a first connecting pipe, a second connecting pipe, a first blowing pipe, and a second blowing pipe. The blowing head is duckbill-shaped. The second connecting pipe is sleeved outside the first connecting pipe to form a sliding seal connection. Both ends of the first connecting pipe and both ends of the second connecting pipe are sealed. The first connecting pipe has a first air inlet and a first air outlet distributed along its circumference on its wall. The second connecting pipe has a movable opening and a connecting opening distributed along its circumference on its wall. One end of the first blowing pipe is sleeved outside one end of the second blowing pipe to form a sliding seal connection. The other end of the first purge tube is connected to the second drive mechanism. The other end of the second purge tube passes through the movable port and communicates with the first air inlet. The first air outlet communicates with the small opening of the purge head. The power mechanism is connected to the second purge tube and the purge head. The telescopic mechanism is connected to the other end of the second purge tube and the second drive mechanism. The second drive mechanism is used to generate positive pressure in the first purge tube and the second purge tube. Under the action of positive pressure, the power mechanism drives the purge head to swing around the axis of the first connecting tube within a preset position range. The telescopic mechanism also causes the second purge tube and the first purge tube to slide relative to each other.

[0013] Optionally, the power mechanism includes a wind turbine box, a first transmission rod, a second transmission rod, a third transmission rod, and a fourth transmission rod. One end of the first transmission rod is rotatably connected to one end of the second transmission rod and the center of the sealing surface of one end of the second connecting pipe via a first pin. The other end of the second transmission rod is rotatably connected to one end of the third transmission rod via a second pin. The other end of the second transmission rod is fixedly connected to the wind turbine box via the second pin. The other end of the third transmission rod is rotatably connected to one end of the fourth transmission rod via a third pin. The other end of the fourth transmission rod is connected to the other end of the first transmission rod and the purging head via a... The second transmission rod is fixedly mounted on one side of the second purge pipe via a fourth pin shaft. The impeller box is mounted on the second purge pipe and is used to convert the force of the gas flow in the second purge pipe into the force of the rotation of the second pin shaft. The length of the third transmission rod is less than the length of the first transmission rod, the length of the second transmission rod, and the length of the fourth transmission rod. The length of the fourth transmission rod is greater than the length of the first transmission rod, the length of the second transmission rod, and the length of the third transmission rod. The sum of the lengths of the third transmission rod and the fourth transmission rod is less than or equal to the sum of the lengths of the first transmission rod and the second transmission rod.

[0014] Optionally, the second purge pipe includes a first sub-pipe and a second sub-pipe. The impeller box includes a box body, a partition, and an impeller. A power chamber is provided inside the box body. The partition is disposed in the power chamber, dividing the power chamber into a collection chamber and an impeller chamber. A second air inlet and a second air outlet are provided on the box body, which communicate with the collection chamber. The second air inlet is connected to one end of the first sub-pipe, and the second air outlet is connected to one end of the second sub-pipe. A receiving hole is provided on the partition. The impeller includes a main shaft and blades. The blades are fixedly disposed on the main shaft, and the main shaft is rotatably fixed in the receiving hole.

[0015] Optionally, the telescopic mechanism includes a third power pipe, a fourth power pipe, and a second connecting rod. The two ends of the second connecting rod are respectively connected to one end of the third power pipe and the other end of the second purge pipe. The third power pipe is arranged parallel to the second purge pipe. The other end of the third power pipe is sleeved with one end of the fourth power pipe to form a sliding seal connection. The other end of the fourth power pipe is connected to the second driving mechanism. The second driving mechanism is used to generate negative or positive pressure in the third power pipe and the fourth power pipe so that relative sliding occurs between the third power pipe and the fourth power pipe.

[0016] Optionally, the sealing and isolation part is provided with a light-collecting port, and both the light-collecting port and the detection port are located in the optical path of the temperature detection element. The light-collecting port is provided with a sealing mechanism for sealing the light-collecting port.

[0017] The present invention also provides a wafer storage device, including a wafer storage cavity and any of the described cooling rate regulation systems for reducing particle effects.

[0018] The beneficial effects of this invention are as follows: Both the contact temperature detection module and the non-contact temperature detection module include a sealed housing, a light-transmitting element, a cleaning element, and at least one temperature detection element. The sealed housing has a detection port on the side facing the wafer carrier. The light-transmitting element is disposed within the detection port, the temperature detection element is disposed within the sealed housing, and the cleaning element is disposed outside the sealed housing for cleaning the light-transmitting element. The temperature detection element of the contact temperature detection module is used to detect the temperature of the contact area to obtain the contact temperature. The temperature detection element of the non-contact temperature detection module is used to detect the temperature of the non-contact area to obtain the non-contact temperature. The light-transmitting element can protect the temperature detection element, and the cleaning element can clean the light-transmitting element, reducing interference from particulate matter in the wafer temporary storage cavity during temperature detection. The control unit acquires the actual temperature difference between the contact area and the non-contact area. The actual temperature difference is compared with the preset temperature difference. If the actual temperature difference is greater than the preset temperature difference, it means that the actual temperature difference between the contact area and the non-contact area is already very large, and the probability of wafer fragmentation is very high. If the wafer continues to be cooled at the current cooling rate, the actual temperature difference between the contact area and the non-contact area will further increase. After determining that the actual temperature difference between the contact area and the non-contact area is greater than the preset temperature difference, the control unit drives the cooling rate adjustment unit to reduce the cooling rate of the wafer temporary storage cavity to the wafer, which can reduce the actual temperature difference between the contact area and the non-contact area, thereby reducing the probability of wafer fragmentation. Furthermore, since the interference of particles in the wafer temporary storage cavity on temperature detection is reduced, and the accuracy of adjusting the cooling rate is greatly improved by judging whether the cooling rate needs to be adjusted based on temperature, the probability of fragmentation caused by the difference in cooling rate can be reduced while ensuring the cooling rate. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of the wafer temporary storage device in some embodiments of the present invention; Figure 2 This is a schematic diagram of the contact temperature detection module in some embodiments of the present invention; Figure 3 This is a schematic diagram of the curled structure of the cleaning head in some embodiments of the present invention; Figure 4 This is a schematic diagram of the extended structure of the cleaning head in some embodiments of the present invention; Figure 5 This is a schematic diagram of the collection mechanism in some embodiments of the present invention; Figure 6 This is a schematic diagram of the cleaning section in some embodiments of the present invention; Figure 7 This is a schematic diagram of the combined structure of the first connecting pipe and the second connecting pipe in some embodiments of the present invention; Figure 8 This is a schematic diagram of the wind turbine box structure in some embodiments of the present invention; Figure 9 This is a schematic diagram of the contact temperature detection module in some embodiments of the present invention; Figure 10 This is a schematic diagram of the contact temperature detection module in some other embodiments of the present invention; Figure 11 This is a schematic diagram of the contact head structure in some embodiments of the present invention; Figure 12 This is a schematic diagram of the connection structure between the sliding block and the rotating plate in some embodiments of the present invention; Figure 13 This is a schematic diagram showing the positions of temperature measuring points on the contact and non-contact areas of the wafer in some embodiments of the present invention; Figure 14 This is a schematic diagram showing the positions of temperature measuring points on the contact and non-contact areas of the wafer in some embodiments of the present invention.

[0020] Explanation of reference numerals in the attached figures 10. Wafer temporary storage cavity; 20. Wafer carrier plate; 30. Wafer; 41. Cooling rate adjustment unit; 42. Contact temperature detection module; 43. Non-contact temperature detection module; 44. Control unit; 421. Sealed housing; 422. Light-transmitting element; 423. Temperature detection element; 424. Detection port; 425. Sealed isolation part; 4251. Light-collecting port; 4252. Sealing mechanism; 426. Isolation cleaning chamber; 427. Cleaning head; 428. Reset strip; 429. Gas 431. Collection head; 432. First collection pipe; 433. Second collection pipe; 434. First power pipe; 435. Second power pipe; 436. First connecting rod; 4311. Purge head; 4312. First connecting pipe; 4313. Second connecting pipe; 4314. First purge pipe; 43141. First sub-pipe; 43142. Second sub-pipe; 4315. Second purge pipe; 4316. First air inlet; 4317. First air outlet; 4318. Activity 4319. Connecting port; 4321. Wind turbine box; 43211. Box body; 43212. Partition plate; 43213. Receiving hole; 43214. Main shaft; 43215. Blade; 43216. Collection chamber; 43217. Wind turbine chamber; 43218. Second air inlet; 43219. Second air outlet; 4322. First transmission rod; 4323. Second transmission rod; 4324. Third transmission rod; 4325. Fourth transmission rod; 4326. First pin; 4327, Second pin; 4328, Third pin; 4329, Fourth pin; 4331, Third power pipe; 4332, Fourth power pipe; 4333, Second connecting rod; 451, Drive motor; 452, Rotating plate; 4521, Connector; 4522, Circular conductive contact plate; 453, Contact head; 454, Sliding block; 4541, Slide groove; 4542, Inner concave edge; 4543, Outer convex edge; 4544, Electrical connection part; 455, Detector conductive contact plate. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0022] To address the problems existing in the prior art, this invention provides a cooling rate regulation system for reducing the impact of particle interference in wafer temporary storage devices. (Refer to...) Figure 1 The wafer temporary storage device includes a wafer temporary storage cavity 10, at least one wafer carrier plate 20, a cooling rate adjustment system to reduce particle impact, and a cooling unit. The wafer carrier plate 20 is disposed within the wafer temporary storage cavity 10 and is used to support the wafer 30. The cooling unit is partially disposed within the wafer temporary storage cavity 10 and is used to cool the wafer. The wafer carrier plate 20 is made of aluminum. The cooling unit includes a chiller and cooling pipes. The cooling pipes are connected to the chiller and are partially located within the wafer temporary storage cavity 10 and in contact with the wafer carrier plate. The chiller cools the cooling medium within the cooling pipes. The cooling pipes carry away heat from the wafer carrier plate 20 through the flow of the medium, thereby removing heat from the wafer.

[0023] Reference Figure 1 The cooling rate adjustment system for reducing particle impact includes a cooling rate adjustment unit 41, a temperature detection unit, and a control unit 44. The cooling rate adjustment unit 41 adjusts the cooling rate of the wafer storage cavity 10 on the wafer 30. The temperature detection unit includes at least one contact temperature detection module 42 and at least one non-contact temperature detection module 43. The contact temperature detection module 42 detects the temperature of the contact area to obtain the contact temperature, and the non-contact temperature detection module 43 detects the temperature of the non-contact area to obtain the non-contact temperature. The control unit 44 is electrically connected to the cooling rate adjustment unit 41 and all the temperature detection elements, and is used to obtain the actual temperature difference between the contact area and the non-contact area, compare the actual temperature difference with a preset temperature difference, and if the actual temperature difference is greater than the preset temperature difference, drive the cooling rate adjustment unit 41 to reduce the cooling rate of the wafer storage cavity 10 on the wafer 30.

[0024] In some embodiments, the preset temperature difference is 3~10℃. Specifically, the preset temperature difference is 3℃, 4℃, 5℃, 6℃, 7℃, 8℃, 9℃ or 10℃.

[0025] Reference Figure 1 and Figure 2Both the contact temperature detection module 42 and the non-contact temperature detection module 43 include a sealed housing 421, a light-transmitting element 422, a cleaning element, and at least one temperature detection element 423. The sealed housing 421 has a detection port 424 on the side facing the wafer carrier. The light-transmitting element 422 is disposed within the detection port 424. The temperature detection element 423 is disposed within the sealed housing 421. The cleaning element is disposed outside the sealed housing 421 and close to the detection port to clean the light-transmitting element 422. The temperature detection element 423 of the contact temperature detection module 42 is used to detect the temperature of the contact area where the wafer contacts the wafer carrier to obtain the contact temperature. The temperature detection element 423 of the non-contact temperature detection module 43 is used to detect the temperature of the non-contact area where the wafer does not contact the wafer carrier to obtain the non-contact temperature.

[0026] In this application, both the contact temperature detection module and the non-contact temperature detection module include a sealed housing, a light-transmitting element, a cleaning element, and at least one temperature detection element. The sealed housing has a detection port on the side facing the wafer carrier. The light-transmitting element is disposed within the detection port, the temperature detection element is disposed within the sealed housing, and the cleaning element is disposed outside the sealed housing for cleaning the light-transmitting element. The temperature detection element of the contact temperature detection module is used to detect the temperature of the contact area to obtain the contact temperature. The temperature detection element of the non-contact temperature detection module is used to detect the temperature of the non-contact area to obtain the non-contact temperature. The light-transmitting element can protect the temperature detection element, and the cleaning element can clean the light-transmitting element, reducing interference from particulate matter in the wafer temporary storage cavity during temperature detection. The control unit acquires the actual temperature difference between the contact area and the non-contact area and... The actual temperature difference is compared with the preset temperature difference. If the actual temperature difference is greater than the preset temperature difference, it means that the temperature difference between the contact area and the non-contact area is already very large, and the probability of wafer fragmentation is very high. If the wafer continues to be cooled at the current cooling rate, the actual temperature difference between the contact area and the non-contact area will further increase. After determining that the actual temperature difference between the contact area and the non-contact area is greater than the preset temperature difference, the control unit drives the cooling rate adjustment unit to reduce the cooling rate of the wafer temporary storage cavity to the wafer, which can reduce the actual temperature difference between the contact area and the non-contact area, thereby reducing the probability of wafer fragmentation. Furthermore, since the interference of particles in the wafer temporary storage cavity on temperature detection is reduced, and the accuracy of adjusting the cooling rate is greatly improved by judging whether the cooling rate needs to be adjusted based on temperature, the probability of fragmentation caused by the difference in cooling rate can be reduced while ensuring the cooling rate.

[0027] Reference Figure 2 The cleaning component includes a sealing isolation part 425 and a cleaning part. The sealing isolation part 425 is fixedly connected to the sealing housing 421 around the detection port 424, and forms an isolation cleaning cavity 426 between the sealing housing 421 and the sealing isolation part 425. The sealing isolation part 425 controls the communication or isolation between the isolation cleaning cavity 426 and the wafer temporary storage cavity. The cleaning part is at least partially disposed in the isolation cleaning cavity 426 for cleaning the light-transmitting component 422.

[0028] Reference Figure 2 , Figure 3 and Figure 4 The cleaning unit includes a cleaning mechanism and a first driving mechanism. The cleaning mechanism includes a cleaning head 427 and a reset strip 428. The cleaning head 427 is made of a flexible polymer material. In its natural state, the cleaning head 427 is flat and elongated. In its natural state, the reset strip 428 is curled. The reset strip 428 is disposed inside the cleaning head 427 and is arranged along the length of the cleaning head 427, causing the cleaning head 427 to curl. An air passage 429 extending along the length of the cleaning head 427 is formed inside the cleaning head 427. The first driving mechanism is connected to the air passage 429. The first driving mechanism is used to inflate or degas the air passage 429. When the first driving mechanism inflates the air passage 429, the air passage 429 expands, and the force exerted by the air passage 429 on the cleaning head 427 is greater than the force exerted by the reset bar 428 on the cleaning head 427, causing the cleaning head 427 to straighten. When the first driving mechanism degasses the air passage 429, the air passage 429 contracts, and the force exerted by the reset bar 428 on the cleaning head 427 is greater than the force exerted by the air passage 429 on the cleaning head 427, causing the cleaning head 427 to curl. During the straightening and curling process, the cleaning head 427 comes into contact with the light-transmitting element 422 and sweeps across the lower surface of the light-transmitting element 422, thereby cleaning the light-transmitting element 422.

[0029] Reference Figure 4 The end of the cleaning head 427 away from the first drive mechanism is arc-shaped to avoid sharp shapes that could scratch the light-transmitting element.

[0030] In some embodiments, the cleaning head 427 is made of any one of polyimide, perfluoroether rubber, polytetrafluoroethylene, etc. The reset strip is made of an elastic material, such as high carbon steel, alloy spring steel, etc.

[0031] Reference Figure 5The cleaning unit further includes a collection mechanism, which comprises a collection head 431, a double telescopic sleeve, and a driver. The collection head 431 is trumpet-shaped. The double telescopic sleeve includes a first collection tube 432, a second collection tube 433, a first power tube 434, a second power tube 435, and a first connecting rod 436. The two ends of the first connecting rod 436 are fixedly connected to one end of the first collection tube 432 and one end of the first power tube 434, respectively. The first collection tube 432 and the first power tube 434 are arranged parallel to each other. One end of the second collection tube 433 is sleeved on the outside of the other end of the first collection tube 432 to form a sliding seal connection. The other end of the collecting tube 433 is connected to the driver. One end of the first collecting tube 432 is connected to the small opening of the collecting head 431. The other end of the first power tube 434 is sleeved with one end of the second power tube 435 to form a sliding seal connection. One end of the first power tube 434 is sealed, and the other end of the second power tube 435 is connected to the driver. The driver is used to generate negative or positive pressure in the first power tube 434 and the second power tube 435 so that relative sliding occurs between the first power tube 434 and the second power tube 435, and to generate negative pressure in the first collecting tube 432 and the second collecting tube 433.

[0032] In some embodiments, a sealing ring is provided at the other end of the first collecting tube to further ensure the seal between the first collecting tube and the second collecting tube.

[0033] In some other embodiments, reference is made to Figure 6 and Figure 7The cleaning unit includes a blowing mechanism, a power mechanism, a telescopic mechanism, and a second drive mechanism. The blowing mechanism includes a blowing head 4311, a first connecting pipe 4312, a second connecting pipe 4313, a first blowing pipe 4314, and a second blowing pipe 4315. The blowing head 4311 is duckbill-shaped. The second connecting pipe 4313 is sleeved on the outside of the first connecting pipe 4312 to form a sliding seal connection. Both ends of the first connecting pipe 4312 and both ends of the second connecting pipe 4313 are sealed. The first connecting pipe 4312 has a first air inlet 4316 and a first air outlet 4317 distributed along its circumference on its pipe wall. The second connecting pipe 4313 has a movable opening 4318 and a connecting opening 4319 distributed along its circumference on its pipe wall. One end of the first blowing pipe 4314 is sleeved on the outside of one end of the second blowing pipe 4315 to form a sliding seal connection. The other end of the first purge pipe 4314 is connected to the second drive mechanism, and the other end of the second purge pipe 4315 passes through the movable port 4318 and communicates with the first air inlet 4316. The first air outlet 4317 communicates with the small opening of the purge head 4311. The power mechanism is connected to the second purge pipe 4315 and the purge head 4311. The telescopic mechanism is connected to the other end of the second purge pipe 4315 and the second drive mechanism. The second drive mechanism is used to generate positive pressure in the first purge pipe 4314 and the second purge pipe 4315. Under the action of positive pressure, the power mechanism drives the purge head 4311 to swing around the axis of the first connecting pipe 4312 within a preset position range, and the telescopic mechanism causes the second purge pipe 4315 and the first purge pipe 4314 to slide relative to each other.

[0034] In some embodiments, the area of ​​the movable port 4318 is larger than the cross-sectional area of ​​the second purge tube 4315, such that the second purge tube 4315 rotates around the axis of the first connecting tube 4312 within the movable port 4318, and the area of ​​the first air outlet 4317 is larger than the area of ​​the connecting port 4319, such that when the second connecting tube 4313 rotates around the first connecting tube 4312, the connecting port 4319 can always correspond to the first air outlet 4317.

[0035] In some embodiments, the first driving mechanism includes a vacuum pump and a pressure pump. The vacuum pump is a device that can extract gas, such as a turbomolecular pump or a dry pump, which can also be understood as a vacuum pump. The pressure pump is a device that can compress gas, such as a compressor, a gas booster pump, or a vacuum pressure gauge, which can also be understood as a gas filling device.

[0036] Reference Figure 6 and Figure 8The power mechanism includes a wind turbine box 4321, a first transmission rod 4322, a second transmission rod 4323, a third transmission rod 4324, and a fourth transmission rod 4325. One end of the first transmission rod 4322 is rotatably connected to one end of the second transmission rod 4323 and the center of the sealing surface of one end of the second connecting pipe 4313 via a first pin 4326. The other end of the second transmission rod 4323 is rotatably connected to one end of the third transmission rod 4324 via a second pin 4327. The other end of the second transmission rod 4323 is fixedly connected to the wind turbine box 4321 via the second pin 4327. The other end of the third transmission rod 4324 is rotatably connected to one end of the fourth transmission rod 4325 via a third pin 4328. The other end of the fourth transmission rod 4325 is connected to the other end of the first transmission rod 4322 and the blowing head. 4311 is rotatably connected via the fourth pin 4329. The second transmission rod 4323 is fixedly disposed on one side of the second purge pipe 4315. The impeller box 4321 is disposed on the second purge pipe and is used to convert the force of the gas flow in the second purge pipe 4315 into the force of the rotation of the second pin 4327. The length of the third transmission rod 4324 is less than the length of the first transmission rod 4322, the length of the second transmission rod 4323 and the length of the fourth transmission rod 4325. The length of the fourth transmission rod 4325 is greater than the length of the first transmission rod 4322, the length of the second transmission rod 4323 and the length of the third transmission rod 4324. The sum of the lengths of the third transmission rod 4324 and the fourth transmission rod 4325 is less than or equal to the sum of the lengths of the first transmission rod 4322 and the second transmission rod 4323.

[0037] Reference Figure 8 The second purge pipe 4315 includes a first sub-pipe 43141 and a second sub-pipe 43142. The impeller box 4321 includes a box body 43211, a partition 43212, and an impeller. A power chamber is formed inside the box body 43211. The partition 43212 is disposed within the power chamber, dividing it into a collection chamber 43216 and an impeller chamber 43217. A second air inlet 43218 and a second air outlet 43219 communicating with the collection chamber 43216 are provided on the box body 43211. The second air inlet 43218 is connected to one end of the first sub-tube 43141, and the second air outlet 43219 is connected to one end of the second sub-tube 43142. The partition plate 43212 is provided with a receiving hole 43213. The impeller includes a main shaft 43214 and blades 43215. The blades 43215 are fixedly mounted on the main shaft 43214. The main shaft 43214 is rotatably fixed in the receiving hole 43213. The main shaft 43214 is fixedly connected to the second pin 4327.

[0038] Reference Figure 8 The impeller cavity 43217 has only one opening, namely the receiving hole 43213. The impeller cavity 43217 serves to accommodate part of the main shaft 43214 and provide space for the blades 43215 to rotate around the main shaft 43214. The area of ​​the second air inlet 43218, the area of ​​the second air outlet 43219, and the cross-sectional area of ​​the collection cavity 43216 are all smaller than the cross-sectional areas of the first sub-tube 43141 and the second sub-tube 43142. This allows for energy concentration, making the gas flow velocity in the collection cavity 43216 greater than the gas flow velocity in the first sub-tube 43141 and the second sub-tube 43142. This, in turn, can drive the blades 43215 to rotate around the main shaft 43214, thereby converting the force of the gas flow into the force of the rotation of the main shaft 43214, ultimately driving the second pin 4327 to rotate.

[0039] Reference Figure 6 The telescopic mechanism includes a third power pipe 4331, a fourth power pipe 4332, and a second connecting rod 4333. The two ends of the second connecting rod 4333 are respectively connected to one end of the third power pipe 4331 and the other end of the second purge pipe 4315. The third power pipe 4331 and the second purge pipe 4315 are arranged parallel to each other. The other end of the third power pipe 4331 is sleeved with one end of the fourth power pipe 4332 to form a sliding seal connection. The other end of the fourth power pipe 4332 is connected to the second driving mechanism. The second driving mechanism is used to generate negative or positive pressure in the third power pipe 4331 and the fourth power pipe 4332 so that the third power pipe 4331 and the fourth power pipe 4332 slide relative to each other.

[0040] In some embodiments, the other end of the third power tube 4331 is sleeved on the outside of one end of the fourth power tube 4332, or one end of the fourth power tube 4332 is sleeved on the outside of the other end of the third power tube 4331.

[0041] In some embodiments, when the other end of the third power pipe 4331 is sleeved on the outside of one end of the fourth power pipe 4332, a sealing ring may be provided at one end of the fourth power pipe 4332 to further ensure the seal between the third power pipe 4331 and the fourth power pipe 4332; when one end of the fourth power pipe 4332 is sleeved on the outside of the other end of the third power pipe 4331, a sealing ring may be provided at the other end of the third power pipe 4331 to further ensure the seal between the third power pipe 4331 and the fourth power pipe 4332.

[0042] Reference Figure 2 The sealing and isolation part 425 has a light-collecting port 4251. The light-collecting port 4251 and the detection port are both located in the optical path of the temperature detection element. The light-collecting port 4251 is provided with a sealing mechanism 4252, which is used to seal the light-collecting port 4251.

[0043] In some embodiments, the closing mechanism 4252 may be an isolation gate, an interlocking door, or a sliding plate, as long as it can close and open the light-collecting opening 4251. No specific limitation is made here.

[0044] Reference Figure 1 and Figure 9 Both the contact temperature detection module 42 and the non-contact temperature detection module 43 include a sealed housing 421, a movable component, and at least one temperature detection element 423. The sealed housing 421 has a detection port 424 on the side facing the wafer carrier. The movable component is fixedly disposed on the inner wall of the sealed housing 421. The temperature detection elements 423 are all fixedly disposed on the movable component. The movable component is used to drive the temperature detection elements 423 to move on a plane parallel to the wafer carrier. The temperature detection element 423 of the contact temperature detection module 42 is used to detect the temperature of the contact area to obtain the contact temperature. The temperature detection element 423 of the non-contact temperature detection module 43 is used to detect the temperature of the non-contact area to obtain the non-contact temperature.

[0045] In some embodiments, reference is made to Figure 9 The movable component includes a drive motor 451, a rotating plate 452, and several contact heads 453. A connector 4521 is fixedly mounted on one side of the rotating plate 452, and the connector 4521 is fixedly connected to the shaft of the drive motor 451. Several annular conductive contact plates 4522 with different radii are arranged around the connector 4521 on one side of the rotating plate 452, and the connector 4521 is located at the center of the annular conductive contact plates 4522. The temperature sensing elements are all fixedly mounted on the rotating plate. On the other side of 452, the rotating plate 452 has several wire holes that pass through it. The electrical connection part of the temperature detection element passes through the corresponding wire holes and connects to the side of the annular conductive contact plate 4522 facing the rotating plate 452. The contact head 453 is fixedly disposed on the sealing housing, and one end of the contact head 453 is slidably connected to the side of the annular conductive contact plate 4522 facing away from the rotating plate 452. The other end of the contact head 453 is electrically connected to the control unit.

[0046] In some other embodiments, reference is made to Figure 10 and Figure 12The movable component includes a drive motor 451, a plurality of sliding blocks 454, a rotating plate 452, and a plurality of contact heads 453. A connector 4521 is fixedly mounted on one side of the rotating plate 452, and the connector 4521 is fixedly connected to the shaft of the drive motor 451. A plurality of annular conductive contact plates 4522 with different radii are arranged around the connector 4521 on one side of the rotating plate 452, and the connector 4521 is located at the center of the annular conductive contact plates 4522. A plurality of sliding blocks 454 are disposed on the other side of the rotating plate 452, and the sliding blocks 454 are slidably connected to the rotating plate 452. A plurality of detection conductive contact plates 453 are arranged along the sliding direction of the sliding blocks 454 on the other side of the rotating plate 452. 55, and the conductive contact plates 455 of the detection elements do not contact each other. The temperature detection element 423 is disposed on the sliding block 454, and the electrical connection part 4544 of the temperature detection element 423 is slidably connected to the corresponding conductive contact plate 455 of the detection element. The rotating plate 452 has a plurality of wire holes penetrating the rotating plate 452. The conductive contact plate 455 of the detection element is connected to the side of the corresponding annular conductive contact plate 4522 facing the rotating plate 452 through the wire holes. The contact head 453 is fixedly disposed on the sealing housing 421, and one end of the contact head 453 is slidably connected to the side of the annular conductive contact plate 4522 facing away from the rotating plate 452. The other end of the contact head 453 is electrically connected to the control unit.

[0047] Reference Figure 11 The contact head 453 is made of conductive metal and is elastic. One side of the contact head 453 is bent, which can reduce the friction between the contact head 453 and the annular conductive contact plate 4522. The elasticity of the contact head 453 can make the contact head 453 fit tightly against the annular conductive contact plate 4522, thus avoiding poor contact between the annular conductive contact plate 4522 and the contact head 453.

[0048] Reference Figure 12 The other side of the rotating plate 452 is provided with a plurality of sliding grooves 4541. The edge of the sliding groove 4541 is provided with an inner concave edge 4542. The conductive contact plate 455 of the detection element is disposed in the sliding groove 4541. The sliding block 454 is provided with an outer convex edge 4543. The sliding block 454 is partially disposed in the sliding groove 4541. The outer convex edge 4543 and the inner concave edge 4542 block each other to prevent the sliding block 454 from falling out of the sliding groove 4541.

[0049] In some embodiments, an insulating material layer is provided between the annular conductive contact plate 4522 and the rotating plate 452, and an insulating material layer is provided between the detection element conductive contact plate 455 and the slide groove 4541.

[0050] Reference Figure 1 , Figure 9 and Figure 10 The contact temperature detection module 42 and the non-contact temperature detection module 43 both include a light-transmitting element 422, which is disposed inside the detection port 424, and the surface of the light-transmitting element 422 is parallel to the upper surface of the wafer carrier plate 20.

[0051] In some embodiments, the light-transmitting element is infrared glass or a quartz sheet, and the light-transmitting element is sheet-shaped. Specifically, the infrared glass is germanium glass with a transmittance of 95%.

[0052] In some embodiments, the cooling rate adjustment system for reducing particle impact further includes a drive motor control module. This drive motor control module is electrically connected to the control unit and the drive motor. The drive motor control module drives the drive motor to rotate the rotating plate after the control unit determines that the actual temperature difference between the contact area and the non-contact area is less than or equal to a preset temperature difference. The rotating plate can be rotated at a preset angle, such as 5° or 10°, or it can be rotated at a random angle to increase the randomness of detection and avoid missed detections that might occur with a fixed rotation angle.

[0053] In some embodiments, the drive motor includes any one of a servo motor, a stepper motor, a closed-loop stepper motor, and a servo motor, and the drive motor control module is the corresponding controller.

[0054] In some embodiments, the cooling rate adjustment unit includes a pressure control module electrically connected to the control unit. The pressure control module is used to extract gas from the wafer storage cavity under the drive of the control unit, thereby reducing the gas pressure in the wafer storage cavity and reducing the cooling rate of the wafer to the wafer.

[0055] In some embodiments, the pressure control module is a vacuum pump, and the cooling rate adjustment unit further includes a pressure sensor. The pressure sensor is disposed in the wafer temporary storage cavity, and the vacuum pump, in conjunction with the pressure sensor, realizes pressure control in the wafer temporary storage cavity.

[0056] In some embodiments, the gas pressure control module is further configured to fill the wafer temporary storage cavity with gas under the drive of the control unit, thereby increasing the gas pressure in the wafer temporary storage cavity and thus increasing the cooling rate of the wafer by the wafer temporary storage cavity.

[0057] In some other embodiments, the air pressure control module is a bidirectional airflow pump or a dual-function pump, and the cooling rate adjustment unit further includes a pressure sensor. The pressure sensor is disposed in the wafer temporary storage cavity, and the bidirectional airflow pump, in conjunction with the pressure sensor, realizes air pressure control in the wafer temporary storage cavity.

[0058] In some embodiments, at high gas pressure, the gas molecule density is high and the number of molecules is large. Gas molecules surrounding the wafer absorb heat from the wafer, causing the hot gas molecules to rise. However, a large number of new, cold gas molecules immediately rush in to fill the gap and continue absorbing heat from the wafer, thus increasing the cooling rate of the wafer. Correspondingly, the heat transfer between the hot gas molecules and the water in the cooling pipes also accelerates.

[0059] At low air pressure, gas molecules have low density and are few in number. Gas molecules surrounding the wafer absorb heat from the wafer, causing hot gas molecules to rise. However, a lack of new, cool gas molecules to fill the gaps means that the wafer continues to absorb heat, thus reducing its cooling rate. Correspondingly, the rate of heat transfer between hot gas molecules and the water in the cooling pipes also decreases.

[0060] In some embodiments, it is also possible to... Figure 9 or Figure 10 Based on this, the cleaning component is added.

[0061] In some embodiments, the cooling rate adjustment system for reducing particle impact further includes an acquisition unit electrically connected to the control unit. The acquisition unit acquires the cooling rate of the wafer storage cavity on the wafer under several gas pressures to obtain several cooling rates, and fits the several gas pressures and several cooling rates to obtain the relationship between the cooling rate and the gas pressure. The gas pressure control module, driven by the control unit, extracts gas from the wafer storage cavity according to the relationship between the cooling rate and the gas pressure, reducing the gas pressure in the wafer storage cavity to decrease the cooling rate of the wafer from the wafer storage cavity. Reducing or increasing the gas pressure in the wafer storage cavity based on the relationship between the cooling rate and the gas pressure significantly improves accuracy compared to the prior art's time-fuzzy estimation, thereby reducing the probability of wafer fragmentation.

[0062] In some embodiments, the cooling rate is divided into several levels, and the air pressure control module only increases or decreases the cooling rate by one level each time it adjusts the air pressure in the wafer temporary storage cavity.

[0063] In some embodiments, the temperature detection device is an infrared temperature sensor. The cooling rate adjustment system for reducing particle influence further includes an emissivity calibration unit. The emissivity calibration unit includes a hot stage, a temperature detector, a calibration infrared temperature sensor, an initial emissivity setting module, an actual emissivity acquisition module, and an application module. The temperature detector and the calibration infrared temperature sensor are disposed on the hot stage. The initial emissivity setting module is electrically connected to the calibration infrared temperature sensor. The initial emissivity setting module is used to determine the initial emissivity of the wafer according to a material emissivity table and apply the initial emissivity to the calibration infrared temperature sensor. The actual emissivity acquisition module is electrically connected to the temperature detector and the calibration infrared temperature sensor. The actual emissivity acquisition module is used to perform dynamic target testing or static target testing on the wafer through the temperature detector and the calibration infrared temperature sensor to obtain the actual emissivity of the wafer. The application module is electrically connected to the actual emissivity acquisition module and the temperature detection device. The application module is used to apply the actual emissivity of the wafer to the temperature detection device.

[0064] The infrared temperature sensor operates on the principle that the total radiant power per unit area is proportional to the fourth power of the temperature, expressed by the formula E = ε * σ * T⁴. Here, ε represents the emissivity of the surface of the object being measured (ranging from 0 to 1), σ represents the Boltzmann constant, T represents the temperature of the surface of the object being measured, and E represents the total radiant power collected by the infrared temperature measurement system.

[0065] In some embodiments, the actual emissivity acquisition module includes a temperature acquisition device, an adjusted emissivity acquisition device, and a first actual emissivity acquisition device. The temperature acquisition device is electrically connected to the hot stage, the temperature detector, and the calibration infrared temperature sensor. The temperature acquisition device is used to heat the wafer through the hot stage and measure the temperature of the wafer through the temperature detector and the calibration infrared temperature sensor to obtain the true temperature and the apparent temperature, respectively. The adjusted emissivity acquisition device is electrically connected to the temperature detector and the calibration infrared temperature sensor. The adjusted emissivity acquisition device is used to adjust the emissivity of the infrared temperature sensor of the hot stage at each moment until the difference between the apparent temperature and the true temperature is less than or equal to a preset correction temperature difference to obtain several adjusted emissivity values. The first actual emissivity acquisition device is electrically connected to the adjusted emissivity acquisition device. The first actual emissivity acquisition device is used to calculate the average of several adjusted emissivity values ​​to obtain the actual emissivity of the wafer.

[0066] In some embodiments, the actual emissivity acquisition module includes a heating controller, an emissivity adjustment device, and a second actual emissivity acquisition device. The heating controller is electrically connected to the hot stage and the temperature detector. The heating controller heats the wafer via the hot stage and detects the actual temperature of the wafer via the temperature detector of the hot stage until the actual temperature of the wafer reaches the target temperature. The emissivity adjustment device is electrically connected to the temperature detector and the calibration infrared temperature sensor. The emissivity adjustment device detects the apparent temperature of the wafer via the infrared temperature sensor of the hot stage and adjusts the emissivity of the infrared temperature sensor of the hot stage. The second actual emissivity acquisition device is electrically connected to the emissivity adjustment device and the calibration infrared temperature sensor. The second actual emissivity acquisition device calculates the difference between the apparent temperature of the wafer and the target temperature until the difference between the apparent temperature of the wafer and the target temperature is less than or equal to a preset correction temperature difference to obtain the adjusted emissivity. The adjusted emissivity is then used as the actual emissivity of the wafer.

[0067] In some embodiments, the actual emissivity of the obtained bare silicon wafer is 95%, the actual emissivity of the obtained silicon wafer with a layer of silicon dioxide deposited is 72.5%, and the actual emissivity of the obtained sapphire material is 85%.

[0068] In some embodiments, the temperature detection unit includes a contact temperature detection module and a non-contact temperature detection module, each of which includes a temperature sensing element. (Refer to...) Figure 13 Temperature measuring point A is located in the contact area of ​​the wafer, and temperature measuring point B is located in the non-contact area of ​​the wafer, with temperature measuring point B being the center of the wafer. Taking a preset temperature difference of 5℃ as an example, the temperature of temperature measuring point A is 100℃, and the temperature of temperature measuring point B is 107℃. That is, the contact temperature is 100℃, and the non-contact temperature is 107℃. The actual temperature difference between temperature measuring points A and B is 7℃, which means that the actual temperature difference between the contact area and the non-contact area is 7℃. This indicates that the cooling rate of the contact area is greater than the cooling rate of the non-contact area. Since 7℃ is greater than 5℃, it is determined that the actual temperature difference between the contact area and the non-contact area is greater than the preset temperature difference, which means that the probability of wafer fragmentation is already very high. If the current cooling rate of the contact area and the non-contact area is continued to be used for cooling, the actual temperature difference between the contact area and the non-contact area will further increase, and the probability of wafer fragmentation will further increase. In order to reduce the probability of wafer fragmentation, the control unit drives the cooling rate adjustment unit to reduce the cooling rate of the wafer temporary storage cavity on the wafer.

[0069] In some embodiments, both the contact temperature detection module and the non-contact temperature detection module include at least two temperature sensors. The temperature sensors of the contact temperature detection module are used to detect the temperature of the contact area to obtain the contact temperature, and the temperature sensors of the non-contact temperature detection module are used to detect the temperature of the non-contact area to obtain the non-contact temperature. The control unit includes a first sorting module, a first difference module, a first comparison module, and a first driving module. The first sorting module is used to obtain the maximum value of the contact temperature and the minimum value of the non-contact temperature, or to obtain the minimum value of the contact temperature and the maximum value of the non-contact temperature. The first difference module is used to calculate the difference between the maximum value of the contact temperature and the minimum value of the non-contact temperature, or to calculate the difference between the minimum value of the contact temperature and the maximum value of the non-contact temperature, so as to obtain the actual temperature difference between the contact area and the non-contact area; the first comparison module is used to compare the actual temperature difference between the contact area and the non-contact area with the preset temperature difference; the first driving module is used to drive the cooling rate adjustment unit to reduce the cooling rate of the wafer temporary storage cavity to the wafer after the first comparison module determines that the actual temperature difference between the contact area and the non-contact area is greater than the preset temperature difference.

[0070] Reference Figure 14 Temperature measuring points A and C are located in the contact area of ​​the wafer, while temperature measuring points B, D, and E are located in the non-contact area of ​​the wafer, with temperature measuring point B being the center of the wafer. The temperatures at temperature measuring points A, B, C, D, and E are 100°C, 107°C, 102°C, 106°C, and 104°C, respectively. Taking a preset temperature difference of 5°C as an example, the maximum temperature at the contact points is 102°C, the minimum temperature at the non-contact points is 104°C, and the actual temperature difference between the contact area and the non-contact area is 2°C. The first comparison module determines that the actual temperature difference between the contact area and the non-contact area is less than the preset temperature difference. Taking the preset temperature difference of 5℃ as an example, the minimum value of the contact temperature is 100℃, the maximum value of the non-contact temperature is 107℃, and the actual temperature difference between the contact area and the non-contact area is 7℃. The first comparison module determines that the actual temperature difference between the contact area and the non-contact area is greater than the preset temperature difference, and the first driving module drives the cooling rate adjustment unit to reduce the cooling rate of the wafer temporary storage cavity on the wafer.

[0071] In some embodiments, both the contact temperature detection module and the non-contact temperature detection module include at least two temperature sensors. The temperature sensors of the contact temperature detection module are used to detect the temperature of the contact area to obtain the contact temperature, and the temperature sensors of the non-contact temperature detection module are used to detect the temperature of the non-contact area to obtain the non-contact temperature. The control unit includes a second sorting module, a second difference module, a second comparison module, and a second driving module. The second sorting module is used to obtain the maximum and minimum values ​​of the contact temperatures, and the maximum and minimum values ​​of the non-contact temperatures. The second difference module is used to calculate the difference between the maximum value of the contact temperature and the minimum value of the non-contact temperature. The difference between the minimum values ​​of the contact temperatures is used to obtain a first difference value, and the difference between the minimum value of the contact temperature and the maximum value of the non-contact temperature is used to obtain a second difference value. The maximum value of the first difference and the second difference is used as the actual temperature difference between the contact area and the non-contact area. The second comparison module is used to compare the actual temperature difference between the contact area and the non-contact area with the preset temperature difference. The second driving module is used to drive the cooling rate adjustment unit to reduce the cooling rate of the wafer temporary storage cavity to the wafer after the second comparison module determines that the actual temperature difference between the contact area and the non-contact area is greater than the preset temperature difference.

[0072] Reference Figure 14 Temperature measuring points A and C are located in the contact area of ​​the wafer, while temperature measuring points B, D, and E are located in the non-contact area of ​​the wafer. Temperature measuring point B is the center of the wafer. The temperature of temperature measuring point A is 100°C, the temperature of temperature measuring point B is 107°C, the temperature of temperature measuring point C is 102°C, the temperature of temperature measuring point D is 106°C, and the temperature of temperature measuring point E is 104°C. Taking the preset temperature difference of 5℃ as an example, the maximum value of the contact temperature is 102℃, the minimum value of the contact temperature is 100℃, the maximum value of the non-contact temperature is 107℃, the minimum value of the non-contact temperature is 104℃, the first difference is 2℃, the second difference is 7℃, and the second difference is greater than the first difference. Therefore, the actual temperature difference between the contact area and the non-contact area is 7℃. The second comparison module determines that the actual temperature difference between the contact area and the non-contact area is greater than the preset temperature difference, and the second driving module drives the cooling rate adjustment unit to reduce the cooling rate of the wafer temporary storage cavity on the wafer.

[0073] In some embodiments, both the contact temperature detection module and the non-contact temperature detection module include at least two temperature sensors. The temperature sensors of the contact temperature detection module are used to detect the temperature of the contact area to obtain the contact temperature, and the temperature sensors of the non-contact temperature detection module are used to detect the temperature of the non-contact area to obtain the non-contact temperature. The control unit further includes a third sorting module, a third difference module, a third comparison module, and a third driving module. The third sorting module is used to obtain the maximum and minimum values ​​of the contact temperatures, and the maximum and minimum values ​​of the non-contact temperatures. The third difference module is used to calculate the difference between the maximum and minimum values ​​of the contact temperatures to obtain a third difference value, and to calculate the difference between the maximum and minimum values ​​of the non-contact temperatures to obtain a fourth difference value; the third comparison module is used to compare the third difference value with the preset temperature difference, and to compare the fourth difference value with the preset temperature difference; the third drive module is used to drive the cooling rate adjustment unit to reduce the cooling rate of the wafer temporary storage cavity to the wafer after the third comparison module determines that the third difference value is greater than the preset temperature difference or the fourth difference value is greater than the preset temperature difference.

[0074] Reference Figure 14 Temperature measuring points A and C are located in the contact area of ​​the wafer, while temperature measuring points B, D, and E are located in the non-contact area of ​​the wafer, with temperature measuring point B being the center of the wafer. The temperatures at temperature measuring points A, B, C, D, and E are 100°C, 107°C, 102°C, 106°C, and 104°C, respectively. Taking a preset temperature difference of 5°C as an example, the maximum value of the contact temperature is 102°C, the minimum value is 100°C, the maximum value of the non-contact temperature is 111°C, and the minimum value is 104°C. The third difference is 2°C, and the fourth difference is 7°C. The third comparison module determines that the fourth difference is greater than the preset temperature difference, and the third driving module drives the cooling rate adjustment unit to reduce the cooling rate of the wafer from the wafer temporary storage cavity.

[0075] In some embodiments, the first comparison unit, the second comparison unit, or the third comparison unit compares the maximum value of the contact temperatures with the target cooling temperature, and compares the maximum value of the non-contact temperatures with the target cooling temperature. When both the maximum value of the contact temperatures and the maximum value of the non-contact temperatures are less than the target cooling temperature, the cooling of the wafer ends.

[0076] It is important to note that the constructions and arrangements of this application shown in several different exemplary embodiments are merely illustrative. Although only a few embodiments are described in detail in this disclosure, those who consult this disclosure will readily understand that many modifications are possible (e.g., changes in the size, dimensions, structure, shape, and proportions of various elements, as well as parameter values ​​(e.g., temperature, pressure, etc.), mounting arrangements, use of materials, color, orientation, etc.) without substantially departing from the novel teachings and advantages of the subject matter described in this application). For example, an element shown as integrally formed may be composed of multiple parts or elements, the position of elements may be inverted or otherwise altered, and the nature or number or position of discrete elements may be changed or altered. Therefore, all such modifications are intended to be included within the scope of the invention. The order or sequence of any process or method steps may be changed or rearranged according to alternative embodiments. In the specification, any term “device plus function” is intended to cover the structure described herein that performs the function, and not only structurally equivalent but also equivalent in structure. Other substitutions, modifications, alterations, and omissions may be made in the design, operation, and arrangement of the exemplary embodiments without departing from the scope of the invention.

[0077] Furthermore, in order to provide a concise description of exemplary embodiments, not all features of actual embodiments (i.e., those features that are not relevant to the best mode of carrying out the invention as currently considered, or those features that are not relevant to implementing the invention) may be omitted.

[0078] It should be understood that numerous specific implementation decisions can be made during the development of any practical implementation, such as in any engineering or design project. Such development efforts may be complex and time-consuming, but for those skilled in the art who benefit from this disclosure, the development effort will be a routine work of design, manufacturing, and production without requiring much experimentation.

[0079] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.

Claims

1. A cooling rate regulation system for reducing the impact of particles, characterized in that, include: Cooling rate adjustment unit, used to adjust the cooling rate of the wafer temporary storage cavity to the wafer; A temperature detection unit includes at least one contact temperature detection module and at least one non-contact temperature detection module. Both the contact temperature detection module and the non-contact temperature detection module include a sealed housing, a light-transmitting element, a cleaning element, and at least one temperature detection element. The sealed housing has a detection port on the side facing the wafer carrier. The light-transmitting element is disposed within the detection port. The temperature detection element is disposed within the sealed housing. The cleaning element is disposed near the detection port to clean the light-transmitting element. The temperature detection element of the contact temperature detection module is used to detect the temperature of the contact area where the wafer contacts the wafer carrier to obtain the contact temperature. The temperature detection element of the non-contact temperature detection module is used to detect the temperature of the non-contact area where the wafer does not contact the wafer carrier to obtain the non-contact temperature. as well as, The control unit, electrically connected to the cooling rate adjustment unit and all the temperature sensors, is used to obtain the actual temperature difference between the contact area and the non-contact area, compare the actual temperature difference with a preset temperature difference, and if the actual temperature difference is greater than the preset temperature difference, drive the cooling rate adjustment unit to reduce the cooling rate of the wafer temporary storage cavity to the wafer.

2. The cooling rate regulation system for reducing the impact of particles according to claim 1, characterized in that, The cleaning component includes a sealing and isolation section and a cleaning section. The sealing and isolation section is fixedly connected to the sealing housing around the detection port and forms an isolation cleaning cavity between the sealing and isolation section and the sealing housing. The sealing and isolation section controls the communication or isolation between the isolation cleaning cavity and the wafer temporary storage cavity. The cleaning section is at least partially disposed in the isolation cleaning cavity and is used to clean the light-transmitting component.

3. The cooling rate regulation system for reducing the impact of particles according to claim 2, characterized in that, The cleaning unit includes a cleaning mechanism and a first driving mechanism. The cleaning mechanism includes a cleaning head and a reset strip. The cleaning head is made of a flexible polymer material. In its natural state, the cleaning head is flat and elongated. In its natural state, the reset strip is curled. The reset strip is disposed inside the cleaning head and is arranged along the length of the cleaning head, causing the cleaning head to curl. An air passage extending along the length of the cleaning head is opened inside the cleaning head. The first driving mechanism is connected to the air passage and is used to inflate or depress the air passage. When the first driving mechanism inflates the air passage, the air passage expands, and the force exerted by the air passage on the cleaning head is greater than the force exerted by the reset strip on the cleaning head, causing the cleaning head to straighten. When the first driving mechanism depresses the air passage, the air passage contracts, and the force exerted by the reset strip on the cleaning head is greater than the force exerted by the air passage on the cleaning head, causing the cleaning head to curl.

4. The cooling rate regulation system for reducing the impact of particles according to claim 3, characterized in that, The cleaning unit further includes a collection mechanism, which comprises a collection head, a double telescopic sleeve, and a driver. The collection head is trumpet-shaped. The double telescopic sleeve includes a first collection tube, a second collection tube, a first power tube, a second power tube, and a first connecting rod. The two ends of the first connecting rod are fixedly connected to one end of the first collection tube and one end of the first power tube, respectively. The first collection tube and the first power tube are arranged parallel to each other. One end of the second collection tube is sleeved on the outside of the other end of the first collection tube to form a sliding seal connection. The other end of the second collection tube is connected to the driver. One end of the first collection tube communicates with the small opening of the collection head. The other end of the first power tube is sleeved on one end of the second power tube to form a sliding seal connection. One end of the first power tube is sealed. The other end of the second power tube is connected to the driver. The driver is used to generate negative or positive pressure in the first and second power tubes to cause relative sliding between the first and second power tubes, and to generate negative pressure in the first and second collection tubes.

5. The cooling rate regulation system for reducing the impact of particles according to claim 2, characterized in that, The cleaning unit includes a blowing mechanism, a power mechanism, a telescopic mechanism, and a second drive mechanism. The blowing mechanism includes a blowing head, a first connecting tube, a second connecting tube, a first blowing tube, and a second blowing tube. The blowing head is duckbill-shaped. The second connecting tube is sleeved outside the first connecting tube to form a sliding seal connection. Both ends of the first connecting tube and both ends of the second connecting tube are sealed. The first connecting tube has a first air inlet and a first air outlet distributed along its circumference on its wall. The second connecting tube has a movable opening and a connecting opening distributed along its circumference on its wall. One end of the first blowing tube is sleeved outside one end of the second blowing tube to form a sliding seal connection. The other end of the purge tube is connected to the second drive mechanism, and the other end of the second purge tube passes through the movable port and communicates with the first air inlet. The first air outlet communicates with the small opening of the purge head. The power mechanism is connected to the second purge tube and the purge head. The telescopic mechanism is connected to the other end of the second purge tube and the second drive mechanism. The second drive mechanism is used to generate positive pressure in the first purge tube and the second purge tube. Under the action of positive pressure, the power mechanism drives the purge head to swing around the axis of the first connecting tube within a preset position range, and the telescopic mechanism causes the second purge tube and the first purge tube to slide relative to each other.

6. The cooling rate regulation system for reducing the impact of particles according to claim 5, characterized in that, The power mechanism includes a wind turbine box, a first transmission rod, a second transmission rod, a third transmission rod, and a fourth transmission rod. One end of the first transmission rod is rotatably connected to one end of the second transmission rod and the center of the sealing surface of one end of the second connecting pipe via a first pin. The other end of the second transmission rod is rotatably connected to one end of the third transmission rod via a second pin. The other end of the second transmission rod is fixedly connected to the wind turbine box via the second pin. The other end of the third transmission rod is rotatably connected to one end of the fourth transmission rod via a third pin. The other end of the fourth transmission rod is rotatably connected to the other end of the first transmission rod and the purging head via a fourth pin. The second transmission rod is fixedly disposed on one side of the second purging pipe. The wind turbine box is disposed on the second purging pipe and is used to convert the force of the gas flow in the second purging pipe into the force of the rotation of the second pin. The length of the third transmission rod is less than the length of the first transmission rod, the length of the second transmission rod, and the length of the fourth transmission rod. The length of the fourth transmission rod is greater than the length of the first transmission rod, the length of the second transmission rod, and the length of the third transmission rod. The sum of the lengths of the third transmission rod and the fourth transmission rod is less than or equal to the sum of the lengths of the first transmission rod and the second transmission rod.

7. The cooling rate regulation system for reducing the impact of particles according to claim 6, characterized in that, The second purging pipe includes a first sub-pipe and a second sub-pipe. The impeller box includes a box body, a partition, and an impeller. The box body has a power chamber inside. The partition is disposed in the power chamber, dividing the power chamber into a collection chamber and an impeller chamber. The box body has a second air inlet and a second air outlet that communicate with the collection chamber. The second air inlet is connected to one end of the first sub-pipe, and the second air outlet is connected to one end of the second sub-pipe. The partition has a receiving hole. The impeller includes a main shaft and blades. The blades are fixedly disposed on the main shaft, and the main shaft is rotatably fixed in the receiving hole.

8. The cooling rate regulation system for reducing the impact of particles according to claim 5, characterized in that, The telescopic mechanism includes a third power pipe, a fourth power pipe, and a second connecting rod. The two ends of the second connecting rod are respectively connected to one end of the third power pipe and the other end of the second purge pipe. The third power pipe is arranged parallel to the second purge pipe. The other end of the third power pipe is sleeved with one end of the fourth power pipe to form a sliding seal connection. The other end of the fourth power pipe is connected to the second driving mechanism. The second driving mechanism is used to generate negative or positive pressure in the third and fourth power pipes so that the third and fourth power pipes slide relative to each other.

9. The cooling rate regulation system for reducing the influence of particles according to any one of claims 2 to 8, characterized in that, The sealing and isolation part has a light-collecting port, and both the light-collecting port and the detection port are located in the optical path of the temperature detection element. The light-collecting port is provided with a sealing mechanism, which is used to close the light-collecting port.

10. A wafer temporary storage device, characterized in that, It includes a wafer temporary storage cavity and a cooling rate regulation system for reducing particle effects as described in any one of claims 1-9.

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