Silicon wafer vertical face type detection method, device, equipment, system and storage medium

Abstract

The application relates to the field of semiconductors and discloses a silicon wafer vertical surface type detection method, device, equipment, system and storage medium, which comprises the following steps: S11, controlling emitted laser to irradiate a target reflecting surface of a multi-surface mirror; the reflected laser irradiates a starting end of a starting detection path; S12, fixing a movable platform and rotating the multi-surface mirror, so that the reflected laser moves from the starting end to an ending end; S13, controlling a laser receiving end to receive laser reflected by a silicon wafer to be detected; S14, when the starting detection path detection ends, controlling the movable platform to move to a next detection path, controlling the laser to irradiate a next target reflecting surface; taking the next detection path as a new starting detection path and taking the next target reflecting surface as a new target reflecting surface, and entering S12 until all the detection paths are detected; and S15, determining surface type information of the silicon wafer to be detected according to the received laser, so as to avoid errors caused by movement of the movable platform during scanning and improve detection precision.

Description

Technical Field

[0001] This application relates to the semiconductor field, and in particular to a method, apparatus, electronic device, system, and computer-readable storage medium for detecting the vertical surface shape of a silicon wafer. Background Technology

[0002] The vertical profile of a silicon wafer is crucial for vertical control during exposure, and consequently, for the accuracy of vertical control in the product. Currently, a leveling sensor (LS) can be used to scan the vertical profile of the silicon wafer. The wafer is placed on a stage, and during scanning, the leveling sensor remains stationary while the stage moves vertically along a plane, scanning one column of exposure fields on the wafer. Once that column is scanned, the stage moves to the next column to be scanned, and so on, repeating this process until the entire vertical profile of the wafer is scanned. However, the movement of the stage inevitably introduces positioning and scanning errors due to its mechanical motion, affecting the accuracy of the wafer profile results.

[0003] Therefore, how to solve the above-mentioned technical problems should be a key focus for those skilled in the art. Summary of the Invention

[0004] The purpose of this application is to provide a method, apparatus, electronic device, system, and computer-readable storage medium for detecting the vertical surface profile of silicon wafers, so as to improve the accuracy of silicon wafer vertical surface profile detection.

[0005] To address the aforementioned technical problems, this application provides a method for detecting the vertical surface shape of a silicon wafer, comprising:

[0006] Step S11: Control the laser emitted by the laser emitting end to irradiate the target reflective surface of the multi-faceted reflector; the laser reflected from the target reflective surface irradiates the starting end of the starting detection path on the silicon wafer under test, and the silicon wafer under test is placed on a movable platform;

[0007] Step S12: Fix the movable platform and rotate the multi-faceted reflector so that the reflected laser moves from the starting end to the ending end of the starting detection path after reflection, until the reflected laser reaches the ending end of the starting detection path; before the detection of the starting detection path ends, the laser continues to irradiate the target reflective surface;

[0008] Step S13: Control the laser receiver to receive the laser reflected by the silicon wafer under test;

[0009] Step S14: When the initial detection path detection is completed, control the movable platform to move towards the next detection path on the silicon wafer to be inspected, and control the laser emitted by the laser emitting end to irradiate the next target reflecting surface of the multi-faceted mirror; take the next detection path as the new initial detection path, take the next target reflecting surface as the new target reflecting surface, and proceed to step S12 until all detection paths are completely detected.

[0010] Step S15: Determine the vertical surface profile information of the silicon wafer under test based on the laser received by the laser receiver.

[0011] Optionally, the length of the initial detection path is greater than or equal to the diameter of the silicon wafer to be inspected.

[0012] Optionally, when the multifaceted reflector is a six-sided reflector, the rotational speed of the multifaceted reflector includes 60° / second.

[0013] Optionally, the detection path is located at the center line of each column of exposure fields.

[0014] This application also provides a silicon wafer vertical surface shape inspection device, including:

[0015] The first control module is used to execute step S11, controlling the laser emitted by the laser emitting end to irradiate the target reflective surface of the multi-faceted reflector; the laser reflected by the target reflective surface irradiates the starting end of the starting detection path on the silicon wafer under test, and the silicon wafer under test is placed on a movable platform;

[0016] The fixing and rotating module is used to perform step S12, fixing the movable platform and rotating the multi-faceted reflector, so that the reflected laser moves from the starting end to the ending end of the starting detection path after reflection, until the reflected laser reaches the ending end of the starting detection path; before the detection of the starting detection path ends, the laser continues to irradiate the target reflective surface;

[0017] The second control module is used in step S13 to control the laser receiver to receive the laser reflected by the silicon wafer under test;

[0018] The control and repeat module is used to execute step S14: when the initial detection path detection is completed, control the movable platform to move towards the next detection path on the silicon wafer to be inspected, and control the laser emitted by the laser emitting end to irradiate the next target reflecting surface of the multi-faceted mirror; take the next detection path as the new initial detection path, take the next target reflecting surface as the new target reflecting surface, and proceed to step S12 until all detection paths are completely detected.

[0019] The determination module is used to perform step S15, determining the vertical surface profile information of the silicon wafer under test based on the laser received by the laser receiver.

[0020] Optionally, when the multifaceted reflector is a six-sided reflector, the rotational speed at which the fixing and rotating module rotates the multifaceted reflector includes 60° / second.

[0021] This application also provides an electronic device, including:

[0022] Memory, used to store computer programs;

[0023] A processor is used to execute the computer program to implement the steps of any of the above-described silicon wafer vertical surface shape detection methods.

[0024] This application also provides a silicon wafer vertical surface shape inspection system, including:

[0025] The system comprises a multifaceted reflector, a movable platform, a laser emitter, a laser receiver, and a drive motor; the drive motor is connected to the center of the multifaceted reflector, and the electronic equipment is connected to the movable platform, the laser emitter, the laser receiver, and the drive motor, respectively.

[0026] Optionally, the multi-faceted reflector includes any one of a three-faced reflector, a four-faced reflector, a five-faced reflector, or a six-faced reflector.

[0027] This application also provides a computer-readable storage medium storing a computer program, which, when executed by a processor, implements the steps of any of the above-described silicon wafer vertical surface shape detection methods.

[0028] This application provides a method for detecting the vertical surface shape of a silicon wafer, comprising: step S11, controlling a laser emitted from a laser emitting end to irradiate a target reflective surface of a multifaceted reflector; the laser reflected from the target reflective surface irradiates the starting end of a starting detection path on the silicon wafer to be inspected, the silicon wafer to be inspected being placed on a movable platform; step S12, fixing the movable platform and rotating the multifaceted reflector, so that the reflected laser moves from the starting end to the ending end of the starting detection path, until the reflected laser reaches the ending end of the starting detection path; before the detection of the starting detection path ends, the laser continues to irradiate the target reflective surface. Step S13: Control the laser receiver to receive the laser reflected by the silicon wafer under test; Step S14: When the initial detection path detection ends, control the movable platform to move towards the next detection path on the silicon wafer under test, and control the laser emitted by the laser emitter to irradiate the next target reflecting surface of the multi-faceted mirror; take the next detection path as the new initial detection path, take the next target reflecting surface as the new target reflecting surface, and proceed to step S12 until all detection paths are completely detected; Step S15: Determine the vertical surface type information of the silicon wafer under test based on the laser received by the laser receiver.

[0029] As can be seen, in this application, when inspecting the vertical surface profile of a silicon wafer, a multi-faceted reflector reflects the laser so that the reflected laser illuminates the beginning of the initial inspection path of the wafer. While the movable platform and the wafer remain stationary, the multi-faceted reflector rotates, causing the reflected laser to move along the initial inspection path. After the initial inspection path is completed, the movable platform moves the wafer towards the next inspection path. The process for the next inspection path is the same as the initial inspection path, until all inspection paths are completed. Therefore, during the inspection and scanning process of each inspection path, the movable platform remains stationary, only needing to move towards the next inspection path after each path is completed. Furthermore, no scanning is required during this stepping motion, which greatly minimizes positioning and scanning errors caused by the movement of the movable platform during scanning. This improves the accuracy of the vertical surface profile inspection results for the wafer, thus enabling more precise vertical control during the exposure process.

[0030] In addition, this application also provides an apparatus, electronic device, system, and computer-readable storage medium having the above advantages. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This is a schematic diagram of the existing technology for detecting the vertical surface shape of a silicon wafer;

[0033] Figure 2 This is a schematic diagram of the detection path when detecting the vertical surface shape of a silicon wafer in the prior art;

[0034] Figure 3 This is a schematic diagram of the detection path error when detecting the vertical surface shape of a silicon wafer in the prior art;

[0035] Figure 4 A flowchart illustrating a method for detecting the vertical surface shape of a silicon wafer provided in an embodiment of this application;

[0036] Figure 5 This is a schematic diagram of the initial detection path distribution during silicon wafer vertical surface shape detection, provided in an embodiment of this application.

[0037] Figure 6 and Figure 7This is a schematic diagram of the surface shape detection at the starting and ending ends of the starting detection path according to an embodiment of this application;

[0038] Figure 8 This is a schematic diagram illustrating the movement to a second detection path during silicon wafer vertical surface shape detection, as provided in an embodiment of this application.

[0039] Figure 9 and Figure 10 This is a schematic diagram of the surface shape detection at the start and end of the second detection path according to an embodiment of this application;

[0040] Figure 11 This is a schematic diagram showing the distribution of the detection path during the vertical surface inspection of a silicon wafer, provided in an embodiment of this application.

[0041] Figure 12 This is a schematic diagram of the initial end face shape detection on the fourth detection path according to an embodiment of this application;

[0042] Figure 13 This is a structural block diagram of the silicon wafer vertical surface shape detection device provided in the embodiments of this application;

[0043] Figure 14 A structural block diagram of an electronic device provided in an embodiment of this application;

[0044] Figure 15 A structural block diagram of a silicon wafer vertical surface shape detection system provided in this application embodiment;

[0045] In the figure, 1. silicon wafer to be inspected, 2. workpiece stage, 3. laser emitter, 4. laser receiver, 5. movable platform, 6. multi-faceted mirror, 7. drive motor, and 8. electronic equipment. Detailed Implementation

[0046] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0047] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0048] Currently, when inspecting the vertical surface shape of a silicon wafer, the schematic diagram of the positions of the vertical sensor (laser emitter 3 and laser receiver 4), the workpiece stage 2, and the silicon wafer 1 to be inspected is shown below. Figure 1 As shown, the scan path is as follows Figure 2 As shown. The silicon wafer 1 to be inspected is placed on the workpiece stage 2. The position of the vertical sensor is fixed. The workpiece stage 2 carries the silicon wafer 1 and performs stepping and scanning movements in the horizontal and vertical directions. This will introduce scanning motion errors and positioning errors caused by the mechanical movement of the workpiece stage 2, such as... Figure 3 As shown, this affects the accuracy of the silicon wafer surface profile results.

[0049] In view of this, this application provides a method for detecting the vertical surface shape of a silicon wafer, please refer to... Figure 4 The method may include:

[0050] Step S11: Control the laser emitted by the laser emitting end to irradiate the target reflective surface of the multi-faceted reflector; the laser reflected by the target reflective surface irradiates the starting end of the starting detection path on the silicon wafer to be inspected, and the silicon wafer to be inspected is placed on a movable platform.

[0051] The position of the laser emitter is fixed.

[0052] The target reflecting surface is any one of the reflecting surfaces of the multi-faceted mirror.

[0053] Please refer to Figure 5 The silicon wafer 1 to be inspected has multiple exposure fields 11 distributed on it. In one possible implementation, the detection path is located at the center line of each column of exposure fields to achieve uniform detection of the surface of the silicon wafer to be inspected. However, this application does not limit this. In other embodiments, each detection path may also be located to the left of the center line of each column of exposure fields, or each detection path may also be located to the right of the center line of each column of exposure fields.

[0054] To ensure the continuity of the testing process, the initial testing path is at one end of the silicon wafer 1 to be tested, such as... Figure 5 The initial detection path is located on the far left of the silicon wafer 1 to be inspected, i.e. Figure 5 In the AB path, after each detection path is completed, the movable platform can move to the right with the silicon wafer to be tested.

[0055] In one embodiment of this application, to ensure the integrity of the detection, the length of the initial detection path is greater than or equal to the diameter of the silicon wafer to be inspected. For example, when the diameter of the silicon wafer to be inspected is 300 mm, the length of the initial detection path can be 350 mm.

[0056] All detection paths can be of equal length and larger than the diameter of the silicon wafer being inspected, such as... Figure 11 The detection paths AB, CD, EF, and GH are shown in the diagram.

[0057] Step S12: Fix the movable platform and rotate the multi-faceted reflector so that the reflected laser moves from the starting end to the ending end of the starting detection path after reflection, until the reflected laser reaches the ending end of the starting detection path; before the detection of the starting detection path ends, the laser continues to irradiate the target reflective surface.

[0058] When a multifaceted mirror rotates, it rotates around its centerline as an axis.

[0059] The silicon wafer to be inspected is located on a movable platform, and fixing the movable platform means fixing the position of the silicon wafer to be inspected.

[0060] Please refer to Figures 6 to 7 The laser emitted by laser emitter 3 illuminates point A1 on the target reflective surface of multifaceted mirror 6. The target reflective surface is surface 1 of the multifaceted mirror in the figure. After being reflected by the target reflective mirror, the laser illuminates the starting end a of the initial detection path on the silicon wafer 1 under test. Laser emitter 3 and silicon wafer 1 under test are fixed. As multifaceted mirror 6 rotates, the laser illuminating the silicon wafer 1 under test gradually moves from the starting end to the ending end b. When the laser emitted by laser emitter 3 illuminates point B1 on the target reflective surface, the laser illuminates the ending end b of the initial detection path on the silicon wafer 1 under test.

[0061] The start and end points of the initial detection path can be located at the edges of the silicon wafer 1 to be inspected, such as... Figure 5 The ab lines in the diagram, or the start and end points can be located on the edge of the silicon wafer, away from the side of the wafer under test, such as... Figure 5 The AB line in the diagram.

[0062] If, before the initial detection path detection ends, the laser emitted by the laser emitter shines from the target reflecting surface onto an adjacent reflecting surface, the reflected laser may not illuminate the initial detection path, or a portion of the detection path may not be illuminated by the laser. Therefore, ensuring that the laser continues to illuminate the target reflecting surface before the initial detection path detection ends guarantees continuous laser illumination of the initial detection path.

[0063] The length of the reflective surface of the multi-faceted mirror is fixed. Rotating one reflective surface corresponds to scanning one detection path. For scanning paths of different lengths, the rotation speed of the multi-faceted mirror can be adjusted.

[0064] As one possible implementation, when the multifaceted reflector is a six-sided reflector, the rotational speed of the multifaceted reflector includes 60° / second.

[0065] Step S13: Control the laser receiver to receive the laser reflected by the silicon wafer under test.

[0066] The laser receiver continuously receives the laser light reflected from the silicon wafer under test.

[0067] In this application, the position of the laser receiver can be fixed, and the receiving area of ​​the laser receiver to receive reflected laser light can be set to be larger to ensure that all laser light reflected by the silicon wafer under test can be received.

[0068] Step S14: When the initial detection path detection is completed, control the movable platform to move towards the next detection path on the silicon wafer to be inspected, and control the laser emitted by the laser emitting end to irradiate the next target reflecting surface of the multi-faceted mirror; take the next detection path as the new initial detection path, take the next target reflecting surface as the new target reflecting surface, and proceed to step S12 until all detection paths are completed.

[0069] The distance the movable platform moves in the direction of the next detection path is equal to the distance between the two adjacent detection paths in the X direction.

[0070] Please refer to Figures 8 to 10 For the second detection path CD, the laser emitted by the laser emitter 3 illuminates the next reflective surface, i.e., surface 2 in the figure. When the laser emitted by the laser emitter 3 illuminates point C1 on surface 2, after being reflected by the target reflector 6, it illuminates the starting end C of the second detection path on the silicon wafer 1 under test. The laser emitter 3 and the silicon wafer 1 under test are fixed. As the multi-faceted reflector 6 rotates, the laser illuminating the silicon wafer 1 under test gradually moves from the starting end to the ending end D. When the laser emitted by the laser emitter 3 illuminates point D1 on surface 2, the laser illuminates the ending end D of the second detection path on the silicon wafer 1 under test.

[0071] like Figure 11 and Figure 12 As shown, after the second detection path is completed, the movable platform 5, carrying the silicon wafer 1 to be tested, continues to move in the X direction to the third detection path EF. After the third detection path is completed, the movable platform 5, carrying the silicon wafer 1 to be tested, continues to move in the X direction to the fourth detection path GH. When detecting the fourth detection path GH, the detection process is the same as the other detection paths. The laser emitted by the laser emitter 3 illuminates point G1 on the surface of the multifaceted mirror 6. After reflection, the laser illuminates point G of the fourth detection path. As the multifaceted mirror 6 rotates, the reflected laser gradually moves towards the end H.

[0072] Depend on Figure 11 It is understood that in this application, during detection, the detection path can be performed according to the set path, avoiding positioning errors and scanning motion errors during the scanning process, compared to... Figure 3 The accuracy of detection has been improved in this application.

[0073] Step S15: Determine the vertical surface profile information of the silicon wafer under test based on the laser received by the laser receiver.

[0074] The method of obtaining vertical surface shape information based on the laser reflected from the silicon wafer under test can be found in relevant technologies, which will not be elaborated here.

[0075] In this embodiment, when detecting the vertical surface profile of a silicon wafer, a multi-faceted reflector reflects laser light, causing the reflected laser to illuminate the starting end of the initial detection path on the wafer. While the movable platform and the wafer remain stationary, the multi-faceted reflector rotates, allowing the reflected laser to move along the initial detection path. After the initial detection path is completed, the movable platform moves the wafer towards the next detection path. The process for the next detection path is the same as the initial detection path, until all detection paths are completed. Therefore, during the scanning process of each detection path, the movable platform remains stationary, only needing to move towards the next detection path after each path is completed. Furthermore, no scanning is required during this stepping motion, which greatly minimizes positioning and scanning errors caused by the movement of the movable platform during scanning. This improves the accuracy of the vertical surface profile detection results for the wafer, thus enabling more precise vertical control during the exposure process.

[0076] The silicon wafer vertical surface shape detection device provided in the embodiments of this application will be described below. The silicon wafer vertical surface shape detection device described below can be referred to in correspondence with the silicon wafer vertical surface shape detection method described above.

[0077] Figure 13 The structural block diagram of the silicon wafer vertical surface profile detection device provided in the embodiments of this application may include:

[0078] The first control module 100 is used to execute step S11, controlling the laser emitted by the laser emitting end to irradiate the target reflective surface of the multi-faceted reflector; the laser reflected by the target reflective surface irradiates the starting end of the starting detection path on the silicon wafer under test, and the silicon wafer under test is placed on a movable platform;

[0079] The fixing and rotating module 200 is used to perform step S12, fixing the movable platform and rotating the multi-faceted reflector, so that the reflected laser moves from the starting end to the ending end of the starting detection path after reflection, until the reflected laser reaches the ending end of the starting detection path; before the detection of the starting detection path ends, the laser continues to irradiate the target reflective surface;

[0080] The second control module 300 is used in step S13 to control the laser receiver to receive the laser reflected by the silicon wafer under test;

[0081] The control and repeat module 400 is used to execute step S14: when the initial detection path detection is completed, control the movable platform to move towards the next detection path on the silicon wafer to be inspected, and control the laser emitted by the laser emitting end to irradiate the next target reflecting surface of the multi-faceted mirror; take the next detection path as the new initial detection path, take the next target reflecting surface as the new target reflecting surface, and proceed to step S12 until all detection paths are completely detected.

[0082] The determination module 500 is used to execute step S15, which determines the vertical surface profile information of the silicon wafer under test based on the laser received by the laser receiver.

[0083] The silicon wafer vertical surface shape detection device of this embodiment is used to implement the aforementioned silicon wafer vertical surface shape detection method. Therefore, the specific implementation of the silicon wafer vertical surface shape detection device can be found in the embodiment section of the silicon wafer vertical surface shape detection method above. For example, the first control module 100, the fixing and rotating module 200, the second control module 300, the control and repeating module 400, and the determining module 500 are respectively used to implement steps S101, S102, S103, S104, and S105 in the above-mentioned silicon wafer vertical surface shape detection method. Therefore, its specific implementation can be referred to the description of the corresponding embodiments, which will not be repeated here.

[0084] As one possible implementation, when the multifaceted reflector is a six-sided reflector, the rotational speed of the fixing and rotating module for rotating the multifaceted reflector includes 60° / second.

[0085] The electronic device provided in the embodiments of this application is described below. The electronic device described below can be referred to in correspondence with the silicon wafer vertical surface shape detection method described above.

[0086] Figure 14 A structural block diagram of an electronic device provided in this application embodiment may include:

[0087] Memory 81 is used to store computer programs;

[0088] The processor 82 is used to implement the steps of the silicon wafer vertical surface shape detection method described in any of the above embodiments when executing the computer program.

[0089] This application also provides a silicon wafer vertical surface shape inspection system, such as Figure 15 As shown, it may include:

[0090] The system includes a multifaceted reflector 6, a movable platform 5, a laser emitter 3, a laser receiver 4, a drive motor 7, and the electronic device 8 described in the above embodiments; the drive motor 7 is connected to the center of the multifaceted reflector 6, and the electronic device 8 is connected to the movable platform 5, the laser emitter 3, the laser receiver 4, and the drive motor 7 respectively.

[0091] In this embodiment, the number of reflecting surfaces of the multi-faceted mirror 6 is not limited and can be set by the user. For example, the multi-faceted mirror 6 includes, but is not limited to, any one of three-faced mirrors, four-faced mirrors, five-faced mirrors, and six-faced mirrors.

[0092] The following describes the computer-readable storage medium provided in the embodiments of this application. The computer-readable storage medium described below can be referred to in correspondence with the silicon wafer vertical surface shape detection method described above.

[0093] A computer-readable storage medium storing a computer program, which, when executed by a processor, implements the steps of the silicon wafer vertical profile detection method described in any of the above embodiments.

[0094] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0095] The above provides a detailed description of the silicon wafer vertical surface shape detection method, apparatus, electronic device, system, and storage medium provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are merely for the purpose of helping to understand the solution and core ideas of this application. It should be noted that those skilled in the art can make various improvements and modifications to this application without departing from its principles, and these improvements and modifications also fall within the protection scope of this application.

Claims

1. A method for detecting a vertical face of a silicon wafer, characterized by, include: Step S11: Control the laser emitted by the laser emitter to illuminate the target reflective surface of the multifaceted mirror; The laser reflected from the target reflective surface illuminates the starting end of the initial detection path on the silicon wafer under test, which is placed on a movable platform. Step S12: Fix the movable platform and rotate the multi-faceted reflector so that the reflected laser moves from the starting end to the ending end of the starting detection path after reflection, until the reflected laser reaches the ending end of the starting detection path; before the detection of the starting detection path ends, the laser continues to irradiate the target reflective surface; Step S13: Control the laser receiver to receive the laser reflected by the silicon wafer under test; Step S14: When the initial detection path detection is completed, control the movable platform to move towards the next detection path on the silicon wafer to be inspected, and control the laser emitted by the laser emitting end to irradiate the next target reflecting surface of the multi-faceted mirror; take the next detection path as the new initial detection path, take the next target reflecting surface as the new target reflecting surface, and proceed to step S12 until all detection paths are completely detected. Step S15: Determine the vertical surface profile information of the silicon wafer under test based on the laser received by the laser receiver.

2. The silicon wafer vertical surface shape detection method as described in claim 1, characterized in that, The length of the initial detection path is greater than or equal to the diameter of the silicon wafer to be inspected.

3. The silicon wafer vertical surface shape detection method as described in claim 1, characterized in that, When the multifaceted reflector is a six-sided reflector, the rotational speed of the multifaceted reflector includes 60° / second.

4. The silicon wafer vertical surface shape detection method according to any one of claims 1 to 3, characterized in that, The detection path is located at the center line of each exposure field.

5. A silicon wafer vertical surface shape detection device, characterized in that, include: The first control module is used to execute step S11, controlling the laser emitted by the laser emitting end to irradiate the target reflective surface of the multifaceted reflector; The laser reflected from the target reflective surface illuminates the starting end of the initial detection path on the silicon wafer under test, which is placed on a movable platform. The fixing and rotating module is used to perform step S12, fixing the movable platform and rotating the multi-faceted reflector, so that the reflected laser moves from the starting end to the ending end of the starting detection path after reflection, until the reflected laser reaches the ending end of the starting detection path; before the detection of the starting detection path ends, the laser continues to irradiate the target reflective surface; The second control module is used in step S13 to control the laser receiver to receive the laser reflected by the silicon wafer under test; The control and repeat module is used to execute step S14: when the initial detection path detection is completed, control the movable platform to move towards the next detection path on the silicon wafer to be inspected, and control the laser emitted by the laser emitting end to irradiate the next target reflecting surface of the multi-faceted mirror; take the next detection path as the new initial detection path, take the next target reflecting surface as the new target reflecting surface, and proceed to step S12 until all detection paths are completely detected. The determination module is used to perform step S15, determining the vertical surface profile information of the silicon wafer under test based on the laser received by the laser receiver.

6. The silicon wafer vertical surface shape detection device as described in claim 5, characterized in that, When the multifaceted reflector is a six-sided reflector, the rotation speed of the fixing and rotating module for rotating the multifaceted reflector includes 60° / second.

7. An electronic device, characterized in that, include: Memory, used to store computer programs; A processor, configured to execute the computer program to implement the steps of the silicon wafer vertical profile detection method as described in any one of claims 1 to 4.

8. A silicon wafer vertical surface shape detection system, characterized in that, include: The system comprises a multifaceted reflector, a movable platform, a laser emitter, a laser receiver, and a drive motor; the drive motor is connected to the center of the multifaceted reflector, and the electronic equipment is connected to the movable platform, the laser emitter, the laser receiver, and the drive motor, respectively.

9. The silicon wafer vertical surface profile inspection system as described in claim 5, characterized in that, The multi-faceted reflector includes any one of a three-faced reflector, a four-faced reflector, a five-faced reflector, or a six-faced reflector.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, implements the steps of the silicon wafer vertical surface shape detection method as described in any one of claims 1 to 4.

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