Film layer on-line detection system, wafer conveying device and on-line detection method

Abstract

The application provides a film layer online detection system, a wafer conveying device and an online detection method. An online temperature detection unit obtains the starting temperature of a qualified film layer of a standard wafer and the cooling time of the qualified film layer to a target temperature, obtains the starting temperature of a film layer of a process wafer in a conveying process and the cooling time of the film layer to the target temperature, the higher the surface roughness of the film layer is, the lower the reflectivity is, which leads to deviation of infrared temperature detection, the starting temperature of the film layer of the process wafer deviates from the starting temperature of the qualified film layer of the standard wafer, a comparison unit judges whether the film layer quality of the process wafer meets the process requirement according to the starting temperature of the film layer of the process wafer and the starting temperature of the qualified film layer of the standard wafer, judges whether a cooling system is abnormal according to the cooling time of the film layer of the process wafer to the target temperature and the cooling time of the qualified film layer of the standard wafer to the target temperature, and real-time online detection is realized.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to an online film layer inspection system, wafer transfer equipment, and online inspection method. Background Technology

[0002] In typical chemical vapor deposition processes, such as plasma-enhanced chemical vapor deposition and tungsten chemical vapor deposition, the surface roughness of the dielectric or metal film is a very critical process parameter.

[0003] Existing chemical vapor deposition systems cannot perform real-time or online detection of the surface roughness of the film during the deposition process. Current technologies typically use atomic force microscopy (AFM) for offline detection.

[0004] The method of detecting the surface roughness of a membrane offline has the following drawbacks: (1) It is impossible to achieve 100% detection; it can only be detected by sampling, and it is impossible to detect 100% of defective products. (2) Atomic force microscopy is expensive; (3) Offline testing may have an adverse effect on the product and increase costs.

[0005] Therefore, it is necessary to provide a novel online film inspection system, wafer transfer equipment, and online inspection method to solve the above-mentioned problems existing in the prior art. Summary of the Invention

[0006] The purpose of this invention is to provide an online film inspection system, a wafer transfer device, and an online inspection method to achieve online inspection and avoid the drawbacks of offline inspection.

[0007] To achieve the above objectives, the online film inspection system of the present invention is applied to a wafer transfer device, the wafer transfer device including an infrared temperature measurement system and a cooling system, and the online film inspection system includes: An online temperature measurement unit is used to drive the wafer transfer device to transfer a standard wafer during the calibration phase, and to drive the cooling system to cool the standard wafer. The unit also uses the infrared temperature measurement system to obtain the temperature of the qualified film layer of the standard wafer during the transfer process, thereby obtaining the standard initial temperature of the qualified film layer and the standard cooling time to the target temperature. During the actual measurement phase, the unit drives the wafer transfer device to transfer a process wafer, and to drive the cooling system to cool the process wafer. The unit also uses the infrared temperature measurement system to obtain the temperature of the film layer of the process wafer during the transfer process, thereby obtaining the measured initial temperature of the film layer and the measured cooling time to the target temperature. The comparison unit is used to determine whether the film quality of the process wafer meets the process requirements based on the standard starting temperature and the measured starting temperature during the film quality judgment stage, and to determine whether the cooling system is normal and / or whether the process wafer has been cooled completely during the cooling judgment stage based on the standard cooling time and the measured cooling time.

[0008] Optionally, the online film detection system further includes an infrared temperature measurement system setting unit, which is electrically connected to the infrared temperature measurement system. The infrared temperature measurement system setting unit is used to calibrate the emissivity of the qualified film layer of the standard wafer before the online temperature measurement unit calibrates the temperature of the qualified film layer of the standard wafer, so as to obtain a standard emissivity, and apply the standard emissivity to the infrared temperature measurement system.

[0009] Optionally, the infrared temperature measurement system setting unit includes a heating drive module, an emissivity acquisition module, and an emissivity application module. The emissivity acquisition module is electrically connected to the heating drive module and the emissivity application module. The heating drive module is used to drive the heating unit to heat the standard wafer to heat the qualified film layer of the standard wafer to a preset calibration temperature. The emissivity acquisition module is used to adjust the emissivity in the infrared temperature measurement unit and detect the temperature of the qualified film layer of the standard wafer through the infrared temperature measurement unit until the detected temperature is the same as the preset calibration temperature to obtain the standard emissivity. The emissivity application module is used to apply the standard emissivity to the infrared temperature measurement system, wherein the infrared temperature measurement unit has the same configuration as the infrared temperature measurement system.

[0010] Optionally, the online temperature measurement unit includes a temperature calibration unit, which includes a cooling drive module, a temperature measurement drive module, and a cooling time acquisition module. The cooling drive module is used to drive the wafer transfer device to transfer a standard wafer heated to the calibration temperature, and to drive the cooling system to cool the standard wafer. The temperature measurement drive module is used to drive the infrared temperature measurement system to continuously detect the temperature of the qualified film layer of the standard wafer and obtain the initial temperature of the qualified film layer of the standard wafer. The cooling time acquisition module is used to obtain the cooling time for the qualified film layer of the standard wafer to cool to the target temperature based on the temperature of the qualified film layer of the standard wafer detected by the infrared temperature measurement system.

[0011] Optionally, the comparison unit includes a first judgment unit, which includes a first difference module and a first comparison module. The first difference module is electrically connected to the online temperature measurement unit and the first comparison module, respectively. The first difference module is used to calculate the difference between the starting temperature of the film layer of the process wafer and the starting temperature of the qualified film layer of the standard wafer to obtain the temperature difference. The first comparison module is used to compare the temperature difference with a preset temperature difference. If the temperature difference is less than or equal to the preset temperature difference, the film layer quality of the process wafer is determined to meet the process requirements.

[0012] Optionally, the first comparison module is further configured to determine that the film quality of the process wafer does not meet the process requirements when the temperature difference is greater than the preset temperature difference.

[0013] Optionally, the comparison unit includes a second judgment unit, which includes a second difference module and a second comparison module. The second difference module is electrically connected to the online temperature measurement unit and the second comparison module, respectively. The second difference module is used to calculate the difference between the cooling time of the film layer of the process wafer to the target temperature and the cooling time of the qualified film layer of the standard wafer to the target temperature, so as to obtain the cooling time difference. The second comparison module is used to compare the cooling time difference with a preset cooling time difference. If the cooling time difference is less than or equal to the preset cooling time difference, the cooling system is judged to be normal. If the cooling time difference is greater than the preset cooling time difference, the cooling system is judged to be abnormal.

[0014] Optionally, the second judgment unit further includes a third comparison module, which is electrically connected to the online temperature measurement unit and the second comparison module respectively. The third comparison module is used to compare the cooling time of the film layer of the process wafer to the target temperature with the cooling time of the qualified film layer of the standard wafer to the target temperature. If the cooling time of the film layer of the process wafer to the target temperature is greater than the cooling time of the qualified film layer of the standard wafer to the target temperature, and the second comparison module determines that the cooling system is abnormal, then it is determined that the process wafer has not been cooled completely.

[0015] The present invention also provides a wafer transfer device, including an infrared temperature measurement system, a cooling system, and any one of the aforementioned film layer online detection systems.

[0016] The present invention also provides an online detection method based on any of the above-described online film detection systems, comprising: During the calibration phase, the online temperature measurement unit drives the wafer transfer device to transfer the standard wafer and drives the cooling system to cool the standard wafer. It also obtains the temperature of the qualified film layer of the standard wafer during the transfer process through the infrared temperature measurement system, so as to obtain the standard starting temperature of the qualified film layer of the standard wafer and the standard cooling time to cool to the target temperature. During the actual measurement phase, the online temperature measurement unit drives the wafer transfer equipment to transfer the process wafer and drives the cooling system to cool the process wafer. It also obtains the temperature of the film layer of the process wafer during the transfer process through the infrared temperature measurement system, so as to obtain the actual measured starting temperature of the film layer of the process wafer and the actual measured cooling time to cool to the target temperature. In the film quality judgment stage, the comparison unit determines whether the film quality of the process wafer meets the process requirements based on the standard starting temperature and the measured starting temperature. In the cooling judgment stage, it determines whether the cooling system is normal and / or whether the process wafer has been cooled completely based on the standard cooling time and the measured cooling time.

[0017] The beneficial effects of this invention are as follows: The online temperature measurement unit acquires the standard starting temperature of the qualified film layer on the standard wafer and the standard cooling time to the target temperature. If the surface roughness of the film layer on the process wafer is high, the reflectivity of the film layer on the process wafer will be very low, resulting in a large deviation in the temperature detection of the film layer on the process wafer during the transfer process. The starting temperature of the film layer on the process wafer will also deviate from the starting temperature of the qualified film layer on the standard wafer. Therefore, the comparison unit can determine whether the surface roughness of the film layer on the process wafer meets the process requirements based on the starting temperature of the film layer on the process wafer and the starting temperature of the qualified film layer on the standard wafer. This achieves real-time online detection without the need for offline detection, avoiding the drawbacks of offline detection. The comparison unit can also determine whether the cooling system is normal and whether the process wafer has been completely cooled during the transfer process based on the cooling time of the film layer on the process wafer to the target temperature and the cooling time of the qualified film layer on the standard wafer to the target temperature. This greatly avoids the drawbacks caused by incomplete cooling of the process wafer during the transfer process due to abnormal cooling system conditions. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the wafer transfer device structure in some embodiments of the present invention; Figure 2 This is a structural block diagram of the online membrane detection system in some embodiments of the present invention; Figure 3 This is a flowchart of an online detection method in some embodiments of the present invention.

[0019] Explanation of reference numerals in the attached figures 10. Infrared temperature measurement system; 20. Online film detection system; 201. Temperature calibration unit; 2011. Cooling drive module; 2012. Temperature measurement drive module; 2013. Cooling time acquisition module; 202. Acquisition unit; 203. First judgment unit; 2031. First difference module; 2032. First comparison module; 204. Second judgment unit; 2041. Second difference module; 2042. Second comparison module; 2043. Third comparison module; 205. Infrared temperature measurement system setting unit; 2051. Heating drive module; 2052. Emissivity acquisition module; 2053. Emissivity application module; 30. Infrared temperature measurement optical path; 40. Cooling gas inlet system; 50. Pressure gauge; 60. Cooling chamber outer wall; 70. Wafer cooling plate; 80. Air extraction hole; 90. Heating unit; 91. Infrared temperature measurement unit. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0021] To address the problems existing in the prior art, embodiments of the present invention provide an online film layer inspection system applied to wafer transfer equipment. (Refer to...) Figure 1 The wafer transfer device includes an infrared temperature measurement system 10, a cooling system, an online film layer detection system 20, an infrared temperature measurement optical path 30, a pressure gauge 50, and an evacuation port 80. The cooling system includes a cooling gas inlet system 40, a cooling chamber outer wall 60, and a wafer cooling plate 70. The structure and installation position of the infrared temperature measurement optical path 30, the cooling gas inlet system 40, the pressure gauge 50, the cooling chamber outer wall 60, the wafer cooling plate 70, and the evacuation port 80 are all existing technologies in the art and will not be described in detail here.

[0022] Reference Figure 1The online film layer inspection system includes an online temperature measurement unit and a comparison unit. The online temperature measurement unit is used to drive the wafer transfer device to transfer a standard wafer during the calibration phase, and to drive the cooling system to cool the standard wafer. It also uses the infrared temperature measurement system 10 to obtain the temperature of the qualified film layer of the standard wafer during transfer, thus obtaining the standard starting temperature of the qualified film layer and the standard cooling time to the target temperature. During the actual measurement phase, it drives the wafer transfer device to transfer a process wafer, and to drive the cooling system to cool the process wafer. It also uses the infrared temperature measurement system 10 to obtain the temperature of the film layer of the process wafer during transfer, thus obtaining the measured starting temperature of the film layer and the measured cooling time to the target temperature. The comparison unit is used to determine whether the film layer quality of the process wafer meets the process requirements based on the standard starting temperature and the measured starting temperature during the film layer quality judgment phase. Furthermore, during the cooling judgment phase, it determines whether the cooling system is functioning normally and / or whether the process wafer has completed cooling based on the standard cooling time and the measured cooling time.

[0023] In some embodiments, surface roughness is a criterion for judging the quality of a film layer. The standard wafer is a wafer that meets the process requirements, and a qualified film layer is a film layer that meets the process requirements, that is, the surface roughness of the film layer meets the process requirements.

[0024] In some embodiments, the infrared temperature measurement principle of the infrared temperature measurement system is as follows: the total radiant power per unit area is proportional to the fourth power of the temperature, expressed by the formula E=ε*σ*T⁴. Here, ε represents the emissivity of the surface of the object being measured (ranging from 0 to 1), σ represents the Boltzmann constant, T represents the temperature of the surface of the object being measured, and E represents the total radiant power collected by the infrared temperature measurement system. Emissivity depends on the type of material (e.g., metals, ceramics, organic materials, etc.) and surface roughness. The smoother the material surface and the lower the surface roughness, the higher the reflectivity and the lower the emissivity. Therefore, the surface roughness of the material significantly affects the accuracy of the infrared temperature measurement system.

[0025] In this application, the online temperature measurement unit acquires the standard starting temperature of the qualified film layer on the standard wafer and the standard cooling time to the target temperature. If the surface roughness of the film layer on the process wafer is high, the reflectivity of the film layer on the process wafer will be very low, resulting in a large deviation in the temperature detection of the film layer on the process wafer during the transfer process. The starting temperature of the film layer on the process wafer will then deviate from the starting temperature of the qualified film layer on the standard wafer. Therefore, the comparison unit can determine whether the surface roughness of the film layer on the process wafer meets the process requirements based on the starting temperature of the film layer on the process wafer and the starting temperature of the qualified film layer on the standard wafer. This achieves real-time online detection without the need for offline detection, avoiding the drawbacks of offline detection. The comparison unit can also determine whether the cooling system is normal and whether the process wafer has been completely cooled during the transfer process based on the cooling time of the film layer on the process wafer to the target temperature and the cooling time of the qualified film layer on the standard wafer to the target temperature. This greatly avoids the drawbacks caused by incomplete cooling of the process wafer during the transfer process due to abnormal cooling system conditions.

[0026] Reference Figure 1 The online film layer detection system further includes an infrared temperature measurement system setting unit 205, which is electrically connected to the infrared temperature measurement system 10. This unit 205 is used to calibrate the emissivity of the qualified film layer on the standard wafer before the online temperature measurement unit calibrates the temperature of the qualified film layer on the standard wafer, thereby obtaining a standard emissivity, which is then applied to the infrared temperature measurement system 10. The preset emissivity in the infrared temperature measurement system 10 may differ significantly from the actual emissivity of the qualified film layer on the standard wafer. Calibrating the emissivity of the qualified film layer on the standard wafer yields a standard emissivity that is closer to the actual emissivity of the qualified film layer. Applying this standard emissivity to the infrared temperature measurement system 10 can greatly improve the accuracy of the infrared temperature measurement system 10 in detecting the temperature of the qualified film layer on the standard wafer.

[0027] Reference Figure 1The infrared temperature measurement system setting unit 205 includes a heating drive module 2051, an emissivity acquisition module 2052, and an emissivity application module 2053. The emissivity acquisition module 2052 is electrically connected to the heating drive module 2051 and the emissivity application module 2053. The heating drive module 2051 is used to drive the heating unit 90 to heat the standard wafer to heat the qualified film layer of the standard wafer to a preset calibration temperature. The emissivity acquisition module 2052 is used to adjust the emissivity in the infrared temperature measurement unit and detect the temperature of the qualified film layer of the standard wafer through the infrared temperature measurement unit until the detected temperature is the same as the preset calibration temperature to obtain the standard emissivity. The emissivity application module 2053 is used to apply the standard emissivity to the infrared temperature measurement system 10, wherein the infrared temperature measurement unit has the same configuration as the infrared temperature measurement system 10. Specifically, the heating unit 90 can be a heating plate with a contact temperature detector in the reaction chamber. The contact temperature detector detects the temperature of the qualified film layer of the standard wafer to ensure that the qualified film layer of the standard wafer is heated to the preset calibration temperature.

[0028] In some embodiments, taking the deposition of tungsten metal as an example, the process temperature for depositing tungsten metal needs to reach 400~425°C. The standard wafer is a standard tungsten wafer. The standard tungsten wafer is heated to 425°C. After the heated standard tungsten wafer is transferred to the chemical vapor deposition reaction chamber, the emissivity in the infrared temperature measurement system in the wafer transfer equipment is adjusted, and the temperature of the qualified film layer of the standard wafer is detected by the infrared temperature measurement system in the wafer transfer equipment until the detected temperature reaches 425°C. At this time, the adjusted emissivity is the emissivity of the film layer of the standard tungsten wafer.

[0029] Reference Figure 1The online temperature measurement unit includes a temperature calibration unit 201 and an acquisition unit 202. The acquisition unit 202 is used to drive the wafer transfer equipment to transfer the process wafer and drive the cooling system to cool the process wafer during the actual measurement stage. It acquires the temperature of the film layer of the process wafer during the transfer process through the infrared temperature measurement system to obtain the measured initial temperature of the film layer of the process wafer and the measured cooling time to the target temperature. The temperature calibration unit 201 includes a cooling drive module 2011, a temperature measurement drive module 2012, and a cooling time acquisition module. Block 2013, the cooling drive module 2011 is used to drive the wafer transfer device to transfer the standard wafer heated to the calibration temperature and drive the cooling system to cool the standard wafer; the temperature measurement drive module 2012 is used to drive the infrared temperature measurement system 10 to continuously detect the temperature of the qualified film layer of the standard wafer and obtain the initial temperature of the qualified film layer of the standard wafer; the cooling time acquisition module 2013 is used to obtain the cooling time for the qualified film layer of the standard wafer to cool to the target temperature based on the temperature of the qualified film layer of the standard wafer detected by the infrared temperature measurement system 10.

[0030] Reference Figure 1 The comparison unit includes a first judgment unit 203, which includes a first difference module 2031 and a first comparison module 2032. The first difference module 2031 is electrically connected to the temperature calibration unit 201, the acquisition unit 202, and the first comparison module 2032. The first difference module 2031 is used to calculate the difference between the starting temperature of the film layer of the process wafer and the starting temperature of the qualified film layer of the standard wafer to obtain the temperature difference. The first comparison module 2032 is used to compare the temperature difference with a preset temperature difference. If the temperature difference is less than or equal to the preset temperature difference, the film layer quality of the process wafer is determined to meet the process requirements. The first comparison module 2032 is also used to determine that the film layer quality of the process wafer does not meet the process requirements when the temperature difference is greater than the preset temperature difference.

[0031] In some embodiments, the preset temperature difference is 0℃~5℃. For example, if the preset temperature difference is 5℃, the starting temperature of the qualified film layer on the standard wafer is 425℃, and the starting temperature of the film layer on the process wafer is 421℃, then the temperature difference is 4℃. Since 4℃ < 5℃, it is determined that the surface roughness of the film layer on the process wafer meets the process requirements. As another example, if the starting temperature of the qualified film layer on the standard wafer is 425℃, and the starting temperature of the qualified film layer on the process wafer is 428℃, then the temperature difference is 3℃. Since 3℃ < 5℃, it is determined that the surface roughness of the film layer on the process wafer meets the process requirements.

[0032] In some embodiments, the preset temperature difference is 0℃~5℃. For example, if the preset temperature difference is 5℃, the starting temperature of the qualified film layer on the standard wafer is 425℃, and the starting temperature of the film layer on the process wafer is 419℃, then the temperature difference is 6℃. Since 6℃ > 5℃, it is determined that the surface roughness of the film layer on the process wafer does not meet the process requirements. Alternatively, if the starting temperature of the qualified film layer on the standard wafer is 425℃, and the starting temperature of the film layer on the process wafer is 432℃, then the temperature difference is 7℃. Since 7℃ > 5℃, it is determined that the surface roughness of the film layer on the process wafer does not meet the process requirements.

[0033] Reference Figure 1 The second judgment unit 204 includes a second difference module 2041 and a second comparison module 2042. The second difference module 2041 is electrically connected to the temperature calibration unit 201, the acquisition unit 202, and the second comparison module 2042, respectively. The second difference module 2041 is used to calculate the difference between the cooling time of the film layer of the process wafer to the target temperature and the cooling time of the qualified film layer of the standard wafer to the target temperature, so as to obtain the cooling time difference. The second comparison module 2042 is used to compare the cooling time difference with a preset cooling time difference. If the cooling time difference is less than or equal to the preset cooling time difference, the cooling system is judged to be normal. If the cooling time difference is greater than the preset cooling time difference, the cooling system is judged to be abnormal.

[0034] In some embodiments, the preset time difference is 0 to 3 seconds. For example, if the preset time difference is 3 seconds, and the cooling time for a qualified film layer on a standard wafer to cool to the target temperature is 10 seconds, while the cooling time for a film layer on a process wafer to cool to the target temperature is 9 seconds, then the cooling time difference is 1 second. Since 1 second < 3 seconds, the cooling system is considered normal. As another example, if the cooling time for a qualified film layer on a standard wafer to cool to the target temperature is 10 seconds, while the cooling time for a film layer on a process wafer to cool to the target temperature is 12 seconds, then the cooling time difference is 2 seconds. Since 2 seconds < 3 seconds, the cooling system is considered normal.

[0035] In some embodiments, the preset time difference is 0 to 3 seconds. For example, if the preset time difference is 3 seconds, and the cooling time for a qualified film layer on a standard wafer to cool to the target temperature is 10 seconds, while the cooling time for a film layer on a process wafer to cool to the target temperature is 6 seconds, then the cooling time difference is 4 seconds. Since 4 seconds > 3 seconds, the cooling system is determined to be abnormal. As another example, if the cooling time for a qualified film layer on a standard wafer to cool to the target temperature is 10 seconds, while the cooling time for a film layer on a process wafer to cool to the target temperature is 15 seconds, then the cooling time difference is 5 seconds. Since 5 seconds > 3 seconds, the cooling system is determined to be abnormal.

[0036] Reference Figure 1The second judgment unit 204 further includes a third comparison module 2043, which is electrically connected to the online temperature measurement unit and the second comparison module 2042 respectively. It is used to compare the cooling time of the film layer of the process wafer to the target temperature with the cooling time of the qualified film layer of the standard wafer to the target temperature. If the cooling time of the film layer of the process wafer to the target temperature is greater than the cooling time of the qualified film layer of the standard wafer to the target temperature, and the second comparison module 2042 determines that the cooling system is abnormal, then it is determined that the process wafer has not been cooled completely. If the cooling time of the film layer of the process wafer to the target temperature is less than or equal to the cooling time of the film layer of the standard wafer to the target temperature, then it is determined that the process wafer has been cooled completely.

[0037] In some embodiments, the preset time difference is 0 to 3 seconds. For example, if the preset time difference is 3 seconds, the cooling time for the qualified film layer of a standard wafer to cool to the target temperature is 10 seconds, and the cooling time for the film layer of a process wafer to cool to the target temperature is 15 seconds. If 15 seconds > 10 seconds, and the cooling time difference is 5 seconds, and 5 seconds > 3 seconds, then it is determined that the process wafer has not been cooled completely.

[0038] In some embodiments, the online film detection system further includes a consistency judgment unit, which compares the cooling times of film layers from different process wafers to determine the consistency of surface roughness of the film layers on the process wafers. If the difference in cooling time between film layers from different process wafers is within 0 to 3 seconds, the consistency of surface roughness of the film layers on the process wafers is considered good, indicating good stability of the preceding processes of the film layers on the process wafers. If the difference in cooling time between film layers from different process wafers is greater than 0 to 3 seconds, the consistency of surface roughness of the film layers on the process wafers is considered poor, indicating poor stability of the preceding processes of the film layers on the process wafers.

[0039] This invention also provides an online detection method based on the aforementioned online membrane detection system. (Refer to...) Figure 3 The online detection method includes the following steps: S1: During the calibration phase, the online temperature measurement unit drives the wafer transfer device to transfer the standard wafer and drives the cooling system to cool the standard wafer. It also obtains the temperature of the qualified film layer of the standard wafer during the transfer process through the infrared temperature measurement system, so as to obtain the standard starting temperature of the qualified film layer of the standard wafer and the standard cooling time to cool to the target temperature. S2: During the actual measurement phase, the online temperature measurement unit drives the wafer transfer equipment to transfer the process wafer and drives the cooling system to cool the process wafer. The infrared temperature measurement system is used to obtain the temperature of the film layer of the process wafer during the transfer process, so as to obtain the actual starting temperature of the film layer of the process wafer and the actual cooling time to cool to the target temperature. S3: In the film quality judgment stage, the comparison unit judges whether the film quality of the process wafer meets the process requirements based on the standard starting temperature and the measured starting temperature. In the cooling judgment stage, it judges whether the cooling system is normal and / or whether the process wafer has been cooled completely based on the standard cooling time and the measured cooling time.

[0040] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. An online film layer inspection system, applied to a wafer transfer device, the wafer transfer device comprising an infrared temperature measurement system and a cooling system, characterized in that, The online membrane detection system includes: An online temperature measurement unit is used to drive the wafer transfer device to transfer a standard wafer during the calibration phase, and to drive the cooling system to cool the standard wafer. The unit also uses the infrared temperature measurement system to obtain the temperature of the qualified film layer of the standard wafer during the transfer process, thereby obtaining the standard initial temperature of the qualified film layer and the standard cooling time to the target temperature. During the actual measurement phase, the unit drives the wafer transfer device to transfer a process wafer, and to drive the cooling system to cool the process wafer. The unit also uses the infrared temperature measurement system to obtain the temperature of the film layer of the process wafer during the transfer process, thereby obtaining the measured initial temperature of the film layer and the measured cooling time to the target temperature. The comparison unit is used to determine whether the film quality of the process wafer meets the process requirements based on the standard starting temperature and the measured starting temperature during the film quality judgment stage, and to determine whether the cooling system is normal and / or whether the process wafer has been cooled completely during the cooling judgment stage based on the standard cooling time and the measured cooling time.

2. The online membrane detection system according to claim 1, characterized in that, It also includes an infrared temperature measurement system setting unit, which is electrically connected to the infrared temperature measurement system. The infrared temperature measurement system setting unit is used to calibrate the emissivity of the qualified film layer of the standard wafer before the online temperature measurement unit calibrates the temperature of the qualified film layer of the standard wafer, so as to obtain a standard emissivity and apply the standard emissivity to the infrared temperature measurement system.

3. The online membrane detection system according to claim 2, characterized in that, The infrared temperature measurement system setting unit includes a heating drive module, an emissivity acquisition module, and an emissivity application module. The emissivity acquisition module is electrically connected to the heating drive module and the emissivity application module. The heating drive module is used to drive the heating unit to heat the standard wafer to heat the qualified film layer of the standard wafer to a preset calibration temperature. The emissivity acquisition module is used to adjust the emissivity in the infrared temperature measurement unit and detect the temperature of the qualified film layer of the standard wafer through the infrared temperature measurement unit until the detected temperature is the same as the preset calibration temperature to obtain the standard emissivity. The emissivity application module is used to apply the standard emissivity to the infrared temperature measurement system, wherein the infrared temperature measurement unit has the same configuration as the infrared temperature measurement system.

4. The online membrane detection system according to claim 3, characterized in that, The online temperature measurement unit includes a temperature calibration unit, which comprises a cooling drive module, a temperature measurement drive module, and a cooling time acquisition module. The cooling drive module is used to drive the wafer transfer device to transfer a standard wafer heated to the calibration temperature, and to drive the cooling system to cool the standard wafer. The temperature measurement drive module is used to drive the infrared temperature measurement system to continuously detect the temperature of the qualified film layer of the standard wafer and obtain the initial temperature of the qualified film layer of the standard wafer. The cooling time acquisition module is used to obtain the cooling time for the qualified film layer of the standard wafer to cool to the target temperature based on the temperature of the qualified film layer of the standard wafer detected by the infrared temperature measurement system.

5. The online membrane detection system according to claim 1, characterized in that, The comparison unit includes a first judgment unit, which includes a first difference module and a first comparison module. The first difference module is electrically connected to the online temperature measurement unit and the first comparison module, respectively. The first difference module is used to calculate the difference between the starting temperature of the film layer of the process wafer and the starting temperature of the qualified film layer of the standard wafer to obtain the temperature difference. The first comparison module is used to compare the temperature difference with a preset temperature difference. If the temperature difference is less than or equal to the preset temperature difference, the film layer quality of the process wafer is judged to meet the process requirements.

6. The online membrane detection system according to claim 5, characterized in that, The first comparison module is also used to determine that the film quality of the process wafer does not meet the process requirements when the temperature difference is greater than the preset temperature difference.

7. The online membrane detection system according to claim 1, characterized in that, The comparison unit includes a second judgment unit, which includes a second difference module and a second comparison module. The second difference module is electrically connected to the online temperature measurement unit and the second comparison module, respectively. The second difference module is used to calculate the difference between the cooling time of the film layer of the process wafer to the target temperature and the cooling time of the qualified film layer of the standard wafer to the target temperature, so as to obtain the cooling time difference. The second comparison module is used to compare the cooling time difference with a preset cooling time difference. If the cooling time difference is less than or equal to the preset cooling time difference, the cooling system is judged to be normal. If the cooling time difference is greater than the preset cooling time difference, the cooling system is judged to be abnormal.

8. The online membrane detection system according to claim 7, characterized in that, The second judgment unit further includes a third comparison module, which is electrically connected to the online temperature measurement unit and the second comparison module respectively. It is used to compare the cooling time of the film layer of the process wafer to the target temperature with the cooling time of the qualified film layer of the standard wafer to the target temperature. If the cooling time of the film layer of the process wafer to the target temperature is greater than the cooling time of the qualified film layer of the standard wafer to the target temperature, and the second comparison module determines that the cooling system is abnormal, then it is determined that the process wafer has not been cooled completely.

9. A wafer transfer device, characterized in that, It includes an infrared temperature measurement system, a cooling system, and an online film detection system as described in any one of claims 1-8.

10. An online detection method based on the online film detection system according to any one of claims 1-8, characterized in that, include: During the calibration phase, the online temperature measurement unit drives the wafer transfer device to transfer the standard wafer and drives the cooling system to cool the standard wafer. It also obtains the temperature of the qualified film layer of the standard wafer during the transfer process through the infrared temperature measurement system, so as to obtain the standard starting temperature of the qualified film layer of the standard wafer and the standard cooling time to cool to the target temperature. During the actual measurement phase, the online temperature measurement unit drives the wafer transfer equipment to transfer the process wafer and drives the cooling system to cool the process wafer. It also obtains the temperature of the film layer of the process wafer during the transfer process through the infrared temperature measurement system, so as to obtain the actual measured starting temperature of the film layer of the process wafer and the actual measured cooling time to cool to the target temperature. In the film quality judgment stage, the comparison unit determines whether the film quality of the process wafer meets the process requirements based on the standard starting temperature and the measured starting temperature. In the cooling judgment stage, it determines whether the cooling system is normal and / or whether the process wafer has been cooled completely based on the standard cooling time and the measured cooling time.

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