Manufacturing method of packaging structure, packaging structure and electronic device

Abstract

The application provides a packaging structure manufacturing method, a packaging structure and an electronic device, and relates to the technical field of semiconductors. The method comprises the following steps: providing a packaging plate, the packaging plate comprising a first surface and a second surface arranged oppositely; the packaging plate comprising a plurality of packaging areas and a plurality of to-be-cut areas arranged around the packaging areas; forming a first insulating layer on the first surface, the first insulating layer comprising first through holes located in the packaging areas; the thickness of the first insulating layer located in the to-be-cut areas is smaller than the thickness of the first insulating layer located in the packaging areas; forming a first wiring layer on the side of the first insulating layer away from the first surface, at least part of the first wiring layer filling the first through holes; and cutting the packaging plate and the first insulating layer based on the to-be-cut areas to form a plurality of packaging structures. In this way, the concentration of cutting stress in the to-be-cut areas can be reduced, and the problem of film layer cracking and falling off at the edges of the packaging structures after cutting can be avoided.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically, to a method for manufacturing a packaging structure, a packaging structure, and an electronic device. Background Technology

[0002] Currently, in the packaging structure manufacturing process, it is usually necessary to complete the fabrication of each film layer on the packaging board before cutting along the area to be cut to separate individual packaging structures. However, in the existing process, the film layer thickness in the area to be cut is equal to the thickness of the packaging area. During the cutting process, stress is easily concentrated in the area to be cut, leading to problems such as film layer cracking and peeling at the edges of the packaged structure after cutting, which affects the product yield and reliability of the packaging structure. Summary of the Invention

[0003] In order to at least overcome the above-mentioned deficiencies in the prior art, the purpose of this application is to provide a method for manufacturing a packaging structure, a packaging structure, and an electronic device.

[0004] In a first aspect, embodiments of this application provide a method for manufacturing a packaging structure, the method comprising: A packaging board is provided, the packaging board including a first surface and a second surface disposed opposite to each other; the packaging board includes a plurality of packaging areas and a plurality of areas to be cut around the packaging areas; A first insulating layer is formed on the first surface, the first insulating layer including a first through-hole located in the encapsulation region; the thickness of the first insulating layer located in the area to be cut is less than the thickness of the first insulating layer located in the encapsulation region. A first trace layer is formed on the side of the first insulating layer away from the first surface, and the first trace layer at least partially fills the first via. The encapsulation board and the first insulating layer are cut based on the area to be cut to form multiple encapsulation structures.

[0005] In one possible implementation, the step of forming a first insulating layer on the first surface includes: A first insulating material layer is formed on the first surface; The first insulating material layer is exposed and developed to form a first through-hole in the packaging area and a first groove in the area to be cut, thus obtaining the first insulating layer.

[0006] In one possible implementation, the step of exposing and developing the first insulating material layer to form a first through-hole in the encapsulation region and a first groove in the region to be cut, thereby obtaining the first insulating layer, includes: The first insulating material layer located in the packaging area is exposed using a full exposure method, and the first insulating material layer located in the area to be cut is exposed using a half exposure method. The first insulating material layer after exposure treatment is developed to form a first through hole in the packaging area and a first groove in the area to be cut, thus obtaining the first insulating layer.

[0007] In one possible implementation, after the step of forming a first trace layer on the side of the first insulating layer away from the first surface, the method further includes: A second insulating layer is formed on the side of the first trace layer away from the first surface, the second insulating layer including a second via located in the packaging region; the thickness of the second insulating layer located in the area to be cut is less than the thickness of the second insulating layer located in the packaging region; A second trace layer is formed on the side of the second insulating layer away from the first surface. The second trace layer at least partially fills the second via and is electrically connected to the first trace layer.

[0008] In one possible implementation, after the step of forming a second wiring layer on the side of the second insulating layer away from the first surface, the method further includes: A third insulating layer is formed on the second surface, wherein the thickness of the third insulating layer located in the area to be cut is greater than the thickness of the second insulating layer located in the encapsulation area.

[0009] In one possible implementation, the step of forming a third insulating layer on the second surface includes: A second insulating material layer is formed on the second surface; The second insulating material layer is exposed and developed to form a second groove located in the encapsulation area, thus obtaining a third insulating layer.

[0010] In one possible implementation, the step of forming a first trace layer on the side of the first insulating layer away from the first surface includes: A seed layer is formed on the side of the first insulating layer away from the encapsulation board, and at least a portion of the seed layer is located within the first through-hole; A conductive material layer is formed on the side of the seed layer away from the encapsulation plate; The first trace layer is obtained by patterning the conductive material layer.

[0011] In one possible implementation, the material of the first insulating layer is polyimide.

[0012] Secondly, embodiments of this application also provide a packaging structure, which is manufactured using the packaging structure manufacturing method described in any of the above aspects.

[0013] Thirdly, embodiments of this application also provide an electronic device, which includes the packaging structure described in any of the above aspects.

[0014] Based on any of the above aspects, the packaging structure manufacturing method, packaging structure and electronic device provided in the embodiments of this application can reduce the concentration of cutting stress in the area to be cut by setting the thickness of the first insulating layer in the area to be cut to be less than the thickness of the first insulating layer in the packaging area, thereby avoiding the problem of film layer cracking and peeling at the edge of the packaging structure after cutting, and improving the reliability of the packaging structure. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings required in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is one of the flowcharts illustrating the method for fabricating the packaging structure provided in this embodiment; Figure 2 This is a schematic diagram of the packaging board provided in this embodiment; Figure 3 This is a schematic diagram of the sub-steps of step S120 provided in this embodiment; Figure 4 This is one of the process diagrams for manufacturing the packaging structure provided in this embodiment; Figure 5 This is a process diagram illustrating the fabrication technology of packaging structures in existing technologies. Figure 6 This is a schematic diagram of the sub-steps of step S122 provided in this embodiment; Figure 7 This is the second process diagram of the manufacturing process of the packaging structure provided in this embodiment; Figure 8 This is the second flowchart illustrating the method for fabricating the packaging structure provided in this embodiment; Figure 9 This is the third process diagram illustrating the manufacturing process of the packaging structure provided in this embodiment; Figure 10 This is the fourth diagram illustrating the manufacturing process of the packaging structure provided in this embodiment; Figure 11 This is the third flowchart illustrating the method for fabricating the packaging structure provided in this embodiment; Figure 12 This is the fifth diagram illustrating the manufacturing process of the packaging structure provided in this embodiment; Figure 13 This is a schematic diagram of a sub-step of step S130 provided in this embodiment.

[0017] Icons: 100 - Packaging board; 110', 110 - Packaging area; 120', 120 - Area to be cut; 210 - First insulating material layer; 220', 220 - First insulating layer; 221 - First through hole; 222 - First groove; 310', 310 - Seed layer; 320 - First wiring layer; 330 - Second wiring layer; 400 - Mask; 410 - Light-shielding area; 420 - Light-transmitting area; 430 - Semi-transparent area; 500 - Second insulating layer; 510 - Second through hole; 610 - Second insulating material layer; 620 - Third insulating layer. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0019] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0020] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0021] In the description of this application, it should be noted that the terms "upper," "lower," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0022] It should be noted that, where there is no conflict, different features in the embodiments of this application can be combined with each other.

[0023] The specific embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0024] Please refer to Figure 1 , Figure 1 This is a flowchart illustrating the method for fabricating the packaging structure provided in this embodiment. The method for fabricating the packaging structure may include the following steps.

[0025] Step S110: A packaging plate 100 is provided, the packaging plate 100 includes a first surface and a second surface disposed opposite to each other; the packaging plate 100 includes a plurality of packaging areas 110 and a plurality of cutting areas 120 disposed around the packaging areas 110.

[0026] In this embodiment, please refer to Figure 2 Multiple packaging areas 110 are arranged in an array. Multiple areas to be cut 120 may include multiple horizontally arranged areas to be cut 120 and multiple vertically arranged areas to be cut 120. The multiple horizontally arranged areas to be cut 120 and the multiple horizontally arranged areas to be cut 120 intersect each other. The horizontally arranged areas to be cut 120 may be located between two adjacent rows of packaging areas 110, and the vertically arranged areas to be cut may be located between two adjacent columns of packaging areas 110. That is, multiple areas to be cut 120 are arranged around the packaging area 110. The areas to be cut 120 are the interval areas between adjacent packaging areas 110. The subsequent cutting process can separate the overall packaging structure into multiple independent packaging structures by cutting along the areas to be cut 120.

[0027] The packaging board 100 can be in the shape of a cuboid, and can be a glass substrate, a chip, etc., which can be selected according to actual needs, and no specific limitation is made here.

[0028] Step S120: A first insulating layer 220 is formed on the first surface. The first insulating layer 220 includes a first through-hole 221 located in the encapsulation region 110. The thickness of the first insulating layer 220 located in the area to be cut 120 is less than the thickness of the first insulating layer 220 located in the encapsulation region 110.

[0029] In this embodiment, a first insulating layer 220 can be formed on the first surface of the encapsulation board 100. The thickness of the first insulating layer 220 located in the cutting area 120 is less than the thickness of the first insulating layer 220 located in the encapsulation area 110. This reduces the concentration of cutting stress in the cutting area 120 and avoids the problem of film cracking and peeling at the edge of the encapsulation structure after cutting. The thinning thickness of the first insulating layer 220 in the cutting area 120 can be adjusted according to actual needs and is not specifically limited here.

[0030] The first insulating layer 220 has a uniform thickness and a flat surface in the encapsulation area 110, which facilitates the subsequent formation of the first wiring layer 320 and ensures that the electrical connection performance of the first wiring layer 320 is stable and reliable.

[0031] Additionally, the first insulating layer 220 may also include a first through-hole 221 located in the encapsulation region 110. The first through-hole 221 exposes the first surface of the encapsulation board 100. The shape of the first through-hole 221 may be cylindrical, and the depth of the first through-hole 221 is equal to the thickness of the first insulating layer 220 located in the encapsulation region 110. Each encapsulation region 110 is provided with one or more first through-holes 221. In some examples, the number of first through-holes 221 provided in different encapsulation regions 110 is equal, which facilitates the subsequent formation of multiple identical encapsulation structures and improves process efficiency.

[0032] In step S130, a first wiring layer 320 is formed on the side of the first insulating layer 220 away from the first surface, and at least a portion of the first wiring layer 320 fills the first through-hole 221.

[0033] In this embodiment, a first wiring layer 320 can be formed on the side of the first insulating layer 220 away from the first surface. The first wiring layer 320 can cover a portion of the surface of the first insulating layer 220 and fill the first via 221. The first wiring layer 320 is located in the packaging region 110, eliminating the need to form the first wiring layer 320 in the region to be cut 120. In some examples, the material of the first wiring layer 320 can be a metallic material, such as copper (Cu), to facilitate signal transmission.

[0034] Step S140: The encapsulation board 100 and the first insulating layer 220 are cut based on the area to be cut 120 to form multiple encapsulation structures.

[0035] In this embodiment, the packaging board 100 and the first insulating layer 220 can be cut based on the area to be cut 120 to form multiple identical packaging structures. Since the thickness of the first insulating layer 220 in the area to be cut 120 is small, the cutting stress can be effectively dispersed during the cutting process, avoiding stress concentration that could cause the first insulating layer 220 at the edge of the packaging structure to crack or fall off. This effectively improves the yield of individual packaging structures after cutting and ensures the reliability of the packaging structure.

[0036] In the above design, by setting the thickness of the first insulating layer 220 located in the area to be cut 120 to be less than the thickness of the first insulating layer 220 located in the encapsulation area 110, the concentration of cutting stress in the area to be cut 120 can be reduced, avoiding the problem of film cracking and peeling at the edge of the encapsulation structure after cutting, and improving the reliability of the encapsulation structure.

[0037] In one possible implementation, please refer to Figure 3 Step S120 may include the following sub-steps.

[0038] Step S121: A first insulating material layer 210 is formed on the first surface.

[0039] Step S122: Exposure and development process is performed on the first insulating material layer 210 to form a first through hole 221 located in the encapsulation region 110 and a first groove 222 located in the cutting region 120, thereby obtaining the first insulating layer 220.

[0040] In this embodiment, please refer to Figure 4 An insulating material can be coated on the first surface of the encapsulation board 100 to form a first insulating material layer 210 with uniform thickness. Then, a first through hole 221 can be formed in the encapsulation area 110 through an exposure and development process, and a first groove 222 for thinning the thickness can be formed in the area to be cut 120. The thickness of the first groove 222 is less than the thickness of the first insulating material layer 210. The first insulating material layer 210 can form a transition area in the area to be cut 120.

[0041] In existing technologies, please refer to Figure 5 Typically, the first insulating layer 220' of the entire area to be cut 120' is directly removed, resulting in a large discontinuity between the first insulating layer 220' and the area to be cut 120', causing the subsequently formed seed layer 310' to have problems of breakage and discontinuity.

[0042] Compared with the prior art, this embodiment can form a transition zone in the area to be cut 120. The first insulating layer 220 in the area to be cut 120 and the first insulating layer 220 in the packaging area 110 are continuously arranged to ensure the continuity of the seed layer 310 formed subsequently, avoid the seed layer 310 from breaking due to the cliff drop, and at the same time, no copper plating nodules will be generated, ensuring the overall process stability of the first trace layer 320.

[0043] In one possible implementation, please refer to Figure 6 Step S122 may include the following sub-steps.

[0044] In step S122a, the first insulating material layer 210 located in the encapsulation region 110 is exposed using a full exposure method, and the first insulating material layer 210 located in the cutting region 120 is exposed using a half exposure method.

[0045] Step S122b involves developing the first insulating material layer 210 after exposure treatment to form a first through hole 221 in the encapsulation region 110 and a first groove 222 in the cutting region 120, thereby obtaining the first insulating layer 220.

[0046] In this embodiment, please refer to Figure 7 The first insulating material layer 210 can be exposed through the photomask 400. The photomask 400 is a light-transmitting area 420 corresponding to the first through hole 221 of the encapsulation area 110, and the other areas of the encapsulation area 110 except for the first through hole 221 are light-shielding areas 410. Therefore, the first insulating material layer 210 at the position of the first through hole 221 of the encapsulation area 110 can be fully exposed, that is, it is processed by full exposure. The photomask 400 is a semi-transparent area 430 corresponding to the area to be cut 120. Therefore, the first insulating material layer 210 in the area to be cut 120 can only receive partial exposure, that is, it is processed by half exposure. The first insulating material layer 210 can be a positive photosensitive material. After exposure, the first insulating material layer 210 can react with the developer, so that the first insulating material layer 210 at the fully exposed first through hole 221 position is completely developed and removed, thereby forming the first through hole 221 penetrating the first insulating material layer 210; the first insulating material layer 210 of the half-exposed cutting area 120 will only have part of its thickness removed, thereby forming the first groove 222.

[0047] It should be noted that the depth of the first groove 222 can be controlled by adjusting the light transmittance of the semi-transparent area 430 of the mask 400, thereby adjusting the final thickness of the first insulating layer 220 of the area to be cut 120, so as to adapt to different cutting process requirements and effectively reduce process complexity.

[0048] In one possible implementation, please refer to Figure 8 After the first wiring layer 320 is formed on the side of the first insulating layer 220 away from the first surface, the method of manufacturing the package structure may further include the following steps.

[0049] In step S210, a second insulating layer 500 is formed on the side of the first wiring layer 320 away from the first surface. The second insulating layer 500 includes a second through-hole 510 located in the packaging region 110. The thickness of the second insulating layer 500 located in the cutting region 120 is less than the thickness of the second insulating layer 500 located in the packaging region 110.

[0050] In this embodiment, please refer to Figure 9 A second insulating layer 500 can be formed on the side of the first wiring layer 320 away from the first surface. The thickness of the second insulating layer 500 located in the cutting area 120 is less than the thickness of the second insulating layer 500 located in the packaging area 110. The second insulating layer 500 may also include a second via 510 located in the packaging area 110. The second via 510 can expose part of the first wiring layer 320, thus facilitating the electrical connection between the second wiring layer 330 and the first wiring layer 320. The shape of the second via 510 can be cylindrical, and the depth of the second via 510 is equal to the thickness of the first insulating layer 220 located in the packaging area 110. Each packaging area 110 is provided with one or more second vias 510. In some examples, the number of second vias 510 provided in different packaging areas 110 is equal, thus facilitating the subsequent formation of multiple identical packaging structures and improving process efficiency.

[0051] The second insulating layer 500 has the same process as the first insulating layer 220. It can simultaneously form the second via 510 and the thinned structure of the area to be cut 120 through exposure and development processes. The second insulating layer 500 with a certain thickness is retained in the area to be cut 120 to form a smooth transition. This can reduce the concentration of cutting stress and avoid the edge of the package structure from cracking and falling off after cutting. It can also ensure the continuity of the second wiring layer 330 formed later, without the occurrence of broken lines or copper nodules, and ensure the stable electrical connection performance of the second wiring layer 330.

[0052] In step S220, a second wiring layer 330 is formed on the side of the second insulating layer 500 away from the first surface. At least a portion of the second wiring layer 330 fills the second through-hole 510 and is electrically connected to the first wiring layer 320.

[0053] In this embodiment, please refer again. Figure 9A second wiring layer 330 can be formed on the side of the second insulating layer 500 away from the first surface. The second wiring layer 330 fills the second via 510 and contacts the first wiring layer 320, realizing the electrical connection between the two wiring layers. The second wiring layer 330 is located in the packaging region 110, and there is no need to form wiring in the region to be cut 120. In some examples, the material of the first wiring layer 320 can be a metallic material, such as copper (Cu), to meet the conductivity requirements of signal transmission. Since the second insulating layer 500 in the region to be cut 120 retains a portion of its thickness, compared to directly and completely removing the second insulating layer 500 in the region to be cut 120 to form a cliff-like discontinuity, in this embodiment, the transition from the packaging region 110 to the region to be cut 120 of the second insulating layer 500 is gradual. This ensures the continuous formation of the seed layer 310 of the second wiring layer 330, avoiding defects such as broken wires and copper nodules, and ensuring the process yield and conductivity stability of the second wiring layer 330. A seed layer 310 is provided after the second wiring layer 330 and the second insulating layer 500. The seed layer 310 covers at least part of the sidewalls and bottom surface of the second insulating layer 500 and the second through hole 510.

[0054] It should be noted that after forming the second wiring layer 330, more insulating layers and wiring layers can be formed on the side of the second wiring layer 330 away from the package board 100. The number of insulating layers and wiring layers can be set according to the actual wiring requirements of the package structure, and no specific limitation is made here. In addition, the process technology of other insulating layers on the side of the second wiring layer 330 away from the package board 100 is the same as that of the first insulating layer 220 and the second insulating layer 500. After all the insulating layers and wiring layers are fabricated, pins can be provided on the side of the wiring layer away from the package board 100 for electrical connection with other electronic devices.

[0055] In one possible implementation, please refer to Figure 10 After the insulation layer and wiring layer of the first surface are completed, a third insulation layer 620 can be formed on the second surface. The thickness of the third insulation layer 620 located in the cutting area 120 is greater than the thickness of the second insulation layer 500 located in the packaging area 110.

[0056] In this embodiment, after forming the insulating layer and wiring layer on the first surface of the packaging board 100, asymmetric warping is easily caused. Therefore, a third insulating layer 620 can be provided on the second surface of the packaging board 100 to improve the warping problem of the packaging board 100, improve the flatness of the overall structure, facilitate subsequent cutting processes, and improve the stability of the packaging structure. The thickness of the third insulating layer 620 located in the cutting area 120 is greater than the thickness of the second insulating layer 500 located in the packaging area 110, which can compensate for the thickness of the cutting area 120 and avoid warping caused by uneven insulation layer thickness on the first surface.

[0057] In addition, to further improve the warpage problem, the thickness of the third insulating layer 620 can be set to be greater than the thickness of the first insulating layer 220, thereby improving the structural stability of the packaging structure.

[0058] It should be noted that after forming the third insulating layer 620, more insulating layers can be formed on the side of the third insulating layer 620 away from the encapsulation board 100. The number of insulating layers can be set according to actual needs and is not specifically limited here. The process of other insulating layers located on the side of the third insulating layer 620 away from the encapsulation board 100 is the same as the process of the third insulating layer 620. After all the insulating layers are made, the overall structure is cut along the area to be cut 120 to separate individual encapsulation structures.

[0059] In one possible implementation, please refer to Figure 11 When forming the third insulating layer 620 on the second surface, the method for fabricating the encapsulation structure may further include the following steps.

[0060] Step S310: A second insulating material layer 610 is formed on the second surface.

[0061] In step S320, the second insulating material layer 610 is exposed and developed to form a second groove located in the encapsulation region 110, thereby obtaining the third insulating layer 620.

[0062] In this embodiment, please refer to Figure 12 An insulating material can be first coated on the second surface of the encapsulation board 100 to form a uniform second insulating material layer 610. Then, a second groove is formed in the encapsulation area 110 through an exposure and development process, making the thickness of the second groove less than the thickness of the second insulating material layer 610. This can compensate for the overall thickness difference caused by the thinner insulating layer in the cutting area 120 of the first surface, further improving the warping problem of the encapsulation board 100 caused by uneven thickness on both sides. At the same time, the depth of the second groove can be controlled by adjusting the exposure parameters, thereby adjusting the final thickness of the third insulating layer 620 in the encapsulation area 110 to adapt to different structural requirements.

[0063] In one possible implementation, please refer to Figure 13 Step S130 may include the following sub-steps.

[0064] In step S131, a seed layer 310 is formed on the side of the first insulating layer 220 away from the encapsulation plate 100, and at least a portion of the seed layer 310 is located within the first through hole 221.

[0065] Step S132: A conductive material layer is formed on the side of the seed layer 310 away from the encapsulation plate 100.

[0066] Step S133: Pattern the conductive material layer to obtain the first trace layer 320.

[0067] In this embodiment, a seed layer 310 can be formed first on the side of the first insulating layer 220 away from the packaging board 100 by electroplating. The seed layer 310 can cover at least part of the bottom surface and sidewall of the first insulating layer 220 and the first through hole 221. Then, a conductive material layer is formed on the side of the seed layer 310 away from the packaging board 100, and the conductive material layer is patterned to obtain the first wiring layer 320. The first wiring layer 320 can cover the seed layer 310.

[0068] In one possible implementation, the first insulating layer 220, the second insulating layer 500, and the third insulating layer 620 are made of the same material, namely polyimide (PI).

[0069] This application also provides a packaging structure, which can be manufactured using the packaging structure manufacturing method provided in this embodiment.

[0070] This application also provides an electronic device, which may include the packaging structure provided in this embodiment.

[0071] In summary, this embodiment provides a method for manufacturing a packaging structure, a packaging structure, and an electronic device. By setting the thickness of the first insulating layer in the area to be cut to be less than the thickness of the first insulating layer in the packaging area, the concentration of cutting stress in the area to be cut can be reduced, avoiding the problem of film layer cracking and peeling at the edge of the packaging structure after cutting, and improving the reliability of the packaging structure.

[0072] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0073] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for manufacturing an encapsulation structure, characterized in that, The method includes: A packaging board is provided, the packaging board including a first surface and a second surface disposed opposite to each other; the packaging board includes a plurality of packaging areas and a plurality of areas to be cut around the packaging areas; A first insulating layer is formed on the first surface, the first insulating layer including a first through-hole located in the encapsulation region; the thickness of the first insulating layer located in the area to be cut is less than the thickness of the first insulating layer located in the encapsulation region. A first trace layer is formed on the side of the first insulating layer away from the first surface, and the first trace layer at least partially fills the first via. The encapsulation board and the first insulating layer are cut based on the area to be cut to form multiple encapsulation structures.

2. The method for manufacturing the packaging structure according to claim 1, characterized in that, The step of forming a first insulating layer on the first surface includes: A first insulating material layer is formed on the first surface; The first insulating material layer is exposed and developed to form a first through-hole in the packaging area and a first groove in the area to be cut, thus obtaining the first insulating layer.

3. The method for manufacturing the packaging structure according to claim 2, characterized in that, The step of performing exposure and development treatment on the first insulating material layer to form a first through-hole located in the packaging area and a first groove located in the area to be cut, thereby obtaining the first insulating layer, includes: The first insulating material layer located in the packaging area is exposed using a full exposure method, and the first insulating material layer located in the area to be cut is exposed using a half exposure method. The first insulating material layer after exposure treatment is developed to form a first through hole in the packaging area and a first groove in the area to be cut, thus obtaining the first insulating layer.

4. The method for manufacturing the packaging structure according to claim 1, characterized in that, After the step of forming a first trace layer on the side of the first insulating layer away from the first surface, the method further includes: A second insulating layer is formed on the side of the first trace layer away from the first surface, the second insulating layer including a second via located in the packaging region; the thickness of the second insulating layer located in the area to be cut is less than the thickness of the second insulating layer located in the packaging region; A second trace layer is formed on the side of the second insulating layer away from the first surface. The second trace layer at least partially fills the second via and is electrically connected to the first trace layer.

5. The method for manufacturing the packaging structure according to claim 4, characterized in that, After the step of forming a second wiring layer on the side of the second insulating layer away from the first surface, the method further includes: A third insulating layer is formed on the second surface, wherein the thickness of the third insulating layer located in the area to be cut is greater than the thickness of the second insulating layer located in the encapsulation area.

6. The method for manufacturing the packaging structure according to claim 5, characterized in that, The step of forming a third insulating layer on the second surface includes: A second insulating material layer is formed on the second surface; The second insulating material layer is exposed and developed to form a second groove located in the encapsulation area, thus obtaining a third insulating layer.

7. The method for manufacturing the packaging structure according to claim 1, characterized in that, The step of forming a first trace layer on the side of the first insulating layer away from the first surface includes: A seed layer is formed on the side of the first insulating layer away from the encapsulation board, and at least a portion of the seed layer is located within the first through-hole; A conductive material layer is formed on the side of the seed layer away from the encapsulation plate; The first trace layer is obtained by patterning the conductive material layer.

8. The method for manufacturing the packaging structure according to claim 1, characterized in that, The material of the first insulating layer is polyimide.

9. A packaging structure, characterized in that, The encapsulation structure is manufactured by the method for manufacturing the encapsulation structure according to any one of claims 1-8.

10. An electronic device, characterized in that, The electronic device includes the packaging structure of claim 9.

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