Apparatus for manipulating guided modes on a nanoscale using electro-optic effect

Abstract

An optical apparatus and device for manipulating and controlling a guided mode using an electro-optic effect in an electromagnetic waveguide. The electromagnetic waveguide includes a first semiconductor layer, an electro-optic material layer, a metal layer adjacent to the electro-optic material layer, and a second semiconductor layer. The optical apparatus is configured to transmit light in the electro-optic material layer, the electromagnetic waveguide is configured to generate a coupled plasmonic mode in the electro-optic material layer, and wherein the electro-optic material layer is configured to modulate the light based on a voltage applied across a thickness of the electro-optic material layer.

Description

[0001] Cross-references to related applications

[0002] This application claims and enjoys priority to and the benefits thereof in U.S. Provisional Patent Application No. 63 / 603,881, filed November 29, 2023, entitled “Apparatus To Manipulate Guided Modes On A Nanoscale Using Electro-optic Effects,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] The systems and methods disclosed herein relate to devices, systems, and methods for controlling and driving electromagnetic fields in localized / guided modes at the nanoscale using the electro-optic effect. Background Technology

[0004] Surface plasmon polaritons (SPPs) are a class of localized electromagnetic waves that propagate along the interface between a metal and a dielectric. These waves are generated by the coupling between the collective oscillations of free electrons in the metal and optical-electromagnetic-dielectric modes. Summary of the Invention

[0005] According to at least one embodiment of this disclosure, an electromagnetic waveguide includes a first layer assembly comprising a first semiconductor layer and an electro-optic material layer, and a second layer assembly comprising a metal layer and a second semiconductor layer. The electro-optic material layer is adjacent to the metal layer, the electromagnetic waveguide is configured to generate a coupled plasmonic mode in the electro-optic material layer, and the electro-optic material layer is configured to modulate light in the coupled plasmonic mode based on a voltage applied across the thickness of the electro-optic material layer.

[0006] According to embodiments of this disclosure, the first semiconductor layer is adjacent to the electro-optic material layer, and the second semiconductor layer is adjacent to the metal layer.

[0007] According to embodiments of the present disclosure, the electro-optic material layer is configured to be phase-dependent based on voltage-modulated coupled plasmon resonance mode, wherein the phase is shifted by a first phase shift value in response to a first voltage value, and the phase is shifted by a second phase shift value in response to a second voltage value.

[0008] According to embodiments of this disclosure, the thickness of the electro-optic material layer is less than the thickness of each of the first semiconductor layer and the second semiconductor layer, and the ratio of the thickness of the metal layer to the wavelength of the light in the coupled plasmon resonance mode is less than 0.1.

[0009] According to embodiments of this disclosure, the thickness of the metal layer is less than the thickness of each of the first semiconductor layer and the second semiconductor layer.

[0010] According to embodiments of this disclosure, the thicknesses of the electro-optic material layer and the metal layer are each less than the width of the electromagnetic waveguide.

[0011] According to embodiments of this disclosure, the thicknesses of the electro-optic material layer and the metal layer are each on the order of tens of nanometers.

[0012] According to embodiments of the present disclosure, the electro-optic material layer includes a crystal lattice configured to generate an electro-optic effect, wherein the electro-optic effect includes changing the refractive index of the electro-optic material layer in response to a voltage applied across the thickness of the electro-optic material layer.

[0013] According to embodiments of the present disclosure, a metal layer is configured to provide an electrical contact portion, which is formed to apply a voltage across the thickness of the electro-optic material layer.

[0014] According to embodiments of this disclosure, the electromagnetic waveguide further includes a second metal layer in contact with the first semiconductor layer, wherein the second metal layer is coupled to a second electrical contact, the second electrical contact being configured to provide a voltage across the thickness of the electro-optic material layer.

[0015] According to embodiments of the present disclosure, the electromagnetic waveguide is a coupled hybrid plasmon polariton waveguide (CHPW) configured to transmit light from a first end to a second end of the electromagnetic waveguide in an electro-optic material layer, wherein the length of the CHPW from the first end to the second end is on the order of tens or hundreds of micrometers.

[0016] According to embodiments of this disclosure, the refractive index of the first semiconductor layer is greater than the refractive index of the electro-optic material layer.

[0017] According to embodiments of this disclosure, the electromagnetic waveguide further includes a third semiconductor layer on the second semiconductor layer, wherein the refractive index of the second semiconductor layer is less than the refractive index of the third semiconductor layer. The second layer assembly may include the third semiconductor layer on the second semiconductor layer.

[0018] According to embodiments of the present disclosure, the second layer assembly includes a second electro-optic material layer that is in contact with a metal layer, wherein the first electro-optic material layer and the second electro-optic material layer are in contact with the metal layer on corresponding sides and surfaces of the metal layer.

[0019] According to embodiments of this disclosure, the electro-optic material layer may include lithium niobate (LiNbO3) or other electro-optic materials.

[0020] According to embodiments of the present disclosure, at least one of the first semiconductor layer and the second semiconductor layer comprises silicon (Si).

[0021] According to embodiments of this disclosure, the width of the electromagnetic waveguide is on the order of tens or hundreds of nanometers.

[0022] According to another embodiment of this disclosure, an optical device includes: a substrate, a first semiconductor layer on the substrate, an electro-optic material layer on the first semiconductor layer, a metal layer on the electro-optic material layer, and a second semiconductor layer on the metal layer, wherein the optical device is configured to focus light in the electro-optic material layer, and wherein the electro-optic material layer is configured to modulate light based on a voltage applied across the thickness of the electro-optic material layer.

[0023] According to embodiments of the present disclosure, the optical device further includes a second metal layer in contact with the first semiconductor layer, wherein the metal layer is in electrical contact with the second metal layer to apply a voltage difference across the thickness of the electro-optic material layer.

[0024] According to embodiments of this disclosure, the optical device further includes a resonant element optically coupled to the electro-optic material layer.

[0025] According to embodiments of this disclosure, the resonant element is a ring resonator adjacent to the electro-optic material layer.

[0026] According to an embodiment of this disclosure, the resonant element is an optical cavity, wherein an electro-optic material layer is disposed within the optical cavity.

[0027] According to embodiments of this disclosure, the optical device is a coupler coupled to a plurality of transceivers.

[0028] According to another embodiment of this disclosure, the transceiver device includes an electro-optic CHPW, which comprises: an electro-optic material layer, a semiconductor layer adjacent to a first surface of the electro-optic material layer, and a metal layer adjacent to a second surface of the electro-optic material layer, wherein the electro-optic CHPW is configured to focus light in the electro-optic material layer. The electro-optic CHPW is configured to generate coupled plasmon resonance modes in the electro-optic material layer, and the electro-optic material layer is configured to modulate the light in the coupled plasmon resonance modes based on a voltage applied across the thickness of the electro-optic material layer.

[0029] According to embodiments of this disclosure, the thickness of the electro-optic material layer is less than the width of the electro-optic CHPW.

[0030] According to embodiments of this disclosure, the thickness of the metal layer is less than the width of the electro-optical CHPW.

[0031] According to embodiments of this disclosure, the transceiver device further includes a light source optically coupled to an electro-optical CHPW, wherein the electro-optical CHPW is used to modulate light and contributes to the output of the transmitter.

[0032] According to embodiments of this disclosure, the transceiver device further includes a photodetector.

[0033] According to embodiments of this disclosure, the transceiver device further includes control circuitry coupled to the electro-optical CHPW, wherein the control circuitry is configured to control the voltage applied across the thickness of the electro-optical material layer.

[0034] According to embodiments of this disclosure, the transceiver device further includes a plurality of photodetectors, wherein the electro-optical CHPW is optically coupled to one or more optical paths leading to the corresponding photodetector.

[0035] According to embodiments of this disclosure, the transceiver device further includes a plurality of waveguides or optical fibers coupled to an electro-optical CHPW and respectively coupled to a photodetector.

[0036] According to embodiments of this disclosure, the transceiver device further includes a plurality of light sources, wherein an electro-optical CHPW is optically coupled to one or more optical paths of the light sources.

[0037] According to embodiments of this disclosure, the transceiver device further includes a plurality of waveguides or optical fibers respectively coupled to the electro-optical CHPW and the light source.

[0038] According to embodiments of this disclosure, the transceiver device further includes a plurality of photodetectors and corresponding light sources, wherein the electro-optical CHPW is optically coupled to one or more optical paths of the photodetectors and the light sources.

[0039] According to embodiments of this disclosure, the transceiver device further includes a plurality of waveguides or optical fibers coupled to the electro-optical CHPW and respectively coupled to a photodetector and a corresponding light source. Attached Figure Description

[0040] The disclosed aspects will now be described in conjunction with the accompanying drawings, which are intended to illustrate and not limit the disclosed aspects, wherein the same reference numerals denote the same elements.

[0041] Figure 1 An exemplary electro-optical CHPW according to some embodiments is illustrated.

[0042] Figure 2 The illustration shows another exemplary electro-optical CHPW according to some embodiments.

[0043] Figure 3A The illustration shows another exemplary electro-optical CHPW according to some embodiments.

[0044] Figure 3B and Figure 3C The illustration shows schematic field distributions of antisymmetric and symmetric modes in an electro-optical CHPW according to some embodiments.

[0045] Figure 4 An exemplary optical device including an electro-optical CHPW is illustrated according to some embodiments.

[0046] Figure 5 Another exemplary optical device including an electro-optical CHPW is illustrated according to some embodiments.

[0047] Figure 6 An exemplary integrated optoelectronic platform including an electro-optical CHPW is illustrated according to some embodiments.

[0048] Figure 7 The illustration shows another exemplary integrated optoelectronic platform including an electro-optical CHPW according to some embodiments.

[0049] Figure 8 The illustration shows another exemplary integrated optoelectronic platform including an electro-optical CHPW according to some embodiments. Detailed Implementation

[0050] First, it should be understood that although illustrative implementations of one or more embodiments are provided below, the disclosed systems, apparatuses, and / or methods can be implemented using any number of currently known or existing techniques. This disclosure should in no way be limited to the illustrative embodiments, drawings, and techniques shown below, including the exemplary designs and implementations shown and described herein, but modifications should be made within the scope of the appended claims and all their equivalents.

[0051] SPP has attracted considerable attention due to its ability to confine such waves to subwavelength dimensions. Therefore, SPP can be used in micro-photonic devices, optical sensors, and applications such as data communication at the nanoscale. The various embodiments described herein fully utilize SPP to enable improvements in communication device size, power consumption, data transmission rates, and more.

[0052] Designing subwavelength optical devices, such as nanoscale optical devices, using SPP (Solid Polymer Propagation) faces challenges including inherent losses due to metals. SPP waves, also known as plasmon modes, can suffer energy loss over relatively short propagation lengths, such as those below one micrometer. This limits the application of SPP in integrated photonic circuits. To overcome the limitations associated with plasmon modes, an electromagnetic waveguide, referred to herein as a coupled hybrid plasmon waveguide (CHPW), is proposed for designing microphotonic devices, such as those at the submicrometer or nanometer scale. The CHPW described herein combines a dielectric waveguide with a metal-dielectric interface to achieve a balance between mode confinement and propagation loss in plasmon modes. By configuring the CHPW's material type, doping, layer refractive index, and lateral (e.g., width) and vertical (e.g., height) dimensions to support plasmon mode confinement, plasmon mode losses can be reduced compared to other configurations, allowing for more efficient and effective utilization of the mode confinement properties of SPP in nanoscale photonic devices.

[0053] Compared to other types of photonic circuits, such as photonic devices based on total internal reflection in silicon, CHPW enables the establishment of plasmon modes with higher mode confinement by including a metal layer in the waveguide structure. This provides a waveguide that enables the establishment and / or transmission of waveguides with higher mode confinement (e.g., CHPW), reducing the size requirements of photonic devices to match the size requirements of electronic components, which in turn allows for better integration of photonic and electronic devices on the same platform (e.g., integrated circuits, chips, sets of chips). The reduced size requirements of CHPW also allow for increased package density of CHPW-based devices compared to other types of photonic devices. This is useful for modern high-speed integrated electronic circuits, such as increasing the package density of transceivers with multi-core optical fibers on a single chip, or for coherent transceivers with high symbol rates for terabits per second (Tbps) communication links. Other advantages of using CHPW-based devices in integrated photonic and electronic circuits include enhanced bandwidth, improved thermally free operation, and reduced power consumption.

[0054] In the examples and embodiments of this disclosure, an optical device (e.g., a CHPW) is configured to generate coupled plasmon modes in its electro-optic material layer. As explained above, the CHPW described herein enables the realization of plasmon modes with higher mode confinement and lower optical losses. For example, when the CHPW is coupled to a light source, transversely antisymmetric and symmetric modes (i.e., coupled plasmon modes) are formed. Some modes correspond to in-phase coupling of two HPW modes, resulting in a stronger field strength overlapping in the metallic region and thus significant propagation losses. Conversely, other modes correspond to destructive interference of two HPW modes, which reduces ohmic losses and enables longer propagation distances.

[0055] According to various examples and embodiments of this disclosure, the CHPW is also configured to provide an electro-optic effect for manipulating plasmon modes and thus modulating electromagnetic waves of light propagating in the electro-optic CHPW, also referred to herein as waveguides. The CHPW includes an electro-optic material, also referred to herein as an electro-optic CHPW, which can be controlled to manipulate plasmon modes and modulate the waveguide. The electro-optic material can be coupled to an adjustable voltage source that can apply a voltage to the electro-optic material to change (e.g., based on the electro-optic effect) the optical properties of the electro-optic material, such as its refractive index. Accordingly, the optical properties of the electro-optic material can be changed by controlling the applied voltage, which enables manipulation of the coupled plasmon modes in a specific manner. For example, the electro-optic effect produces a phase change in the coupled plasmon modes (e.g., as a function of voltage bias), which can be used to implement high-speed modulation schemes (e.g., phase modulation). In a more specific example, the coupled plasmon modes are manipulated to modulate waves propagating in the waveguide to perform specific functions of a photonic device. Such photonic devices can be integrated on platforms compatible with conventional electronics. For example, electro-optical CHPW can be used to integrate photonic circuits and devices in modern high-speed integrated circuits to overcome or mitigate challenges related to interconnect density, latency, and power consumption.

[0056] In addition to these advantages of CHPW, electro-optic CHPW also provides electro-optic effects, which allow for level-of-control modulation, such as manipulating coupled plasmon modes and thus modulating guided modes in photonic devices by adjusting the applied voltage. This control can be used to provide dynamic and adaptive photonic devices, such as transmitters, receivers, and interconnects for data communications. Interconnects in optical communications are components designed to process data transmission using light (typically via fiber optic cables or waveguides). Such interconnects can be used in high-speed data networks (e.g., gigabit or terabit rates), telecommunications, and data centers. Examples of interconnects in optical communications include: optical fibers, optical waveguides, optical connectors, optical transceivers, optical amplifiers, optical switches, optical splitters and combiners, optical add-drop multiplexers, and other optical communication devices.

[0057] In some embodiments, using a symmetrical mode as the signal carrier for the above-described modulation based on the electro-optic effect can reduce losses (e.g., insertion loss) in the CHPW. In a specific example, insertion loss can be reduced by manipulating the CHPW parameters to establish electric field symmetry for the symmetrical mode.

[0058] The design of CHPW enables enhanced or maximum overlap between electromagnetic (EM) modes and electro-optic material layers, thereby reducing the voltage required to obtain a certain amount of EM field modulation in that layer.

[0059] In at least some embodiments of this disclosure, an electro-optic material is disposed in the CHPW to achieve or otherwise maximize the electro-optic effect, thereby reducing the electrical power or applied voltage required to modulate the light. The CHPW also includes a semiconductor layer and a metal layer, both in contact with the electro-optic material layer. Figure 1 A cross-sectional view of an exemplary electromagnetic waveguide 100 according to an embodiment of the present disclosure is illustrated. The electromagnetic waveguide 100 is an electro-optic CHPW, comprising a first semiconductor layer 110 and an electro-optic material layer 120 disposed on the first semiconductor layer 110. The electromagnetic waveguide 100 also includes a metal layer 130 on the electro-optic material layer 120 and a second semiconductor layer 140 on the metal layer 130. Both the first semiconductor layer 110 and the metal layer 130 are in contact with the electro-optic material layer 120 on corresponding sides and surfaces. In other embodiments, the metal layer 130 may be disposed between the electro-optic material layer 120 and the first semiconductor layer 110, and the second semiconductor layer 140 may be disposed on top of the electro-optic material layer 120. Figure 1 Compared to the layer arrangement shown, this alternative layer arrangement does not alter the electro-optic effect or electro-optic characteristics of the electromagnetic waveguide 100 used for manipulating and modulating the guided waves. These layers can be formed using semiconductor chip fabrication and manufacturing techniques, such as using complementary metal-oxide-semiconductor (CMOS), or other suitable manufacturing processes for semiconductor devices.

[0060] In some embodiments, the electro-optic material of the electro-optic material layer 120 is a crystalline material configured to achieve the electro-optic effect, such as through doping. Examples of such crystalline materials include semiconductor materials, such as silicon, lithium niobate, indium phosphide, or other suitable materials. According to the electro-optic effect, the refractive index characteristics of the electro-optic material can be changed in a specific direction based on the amount of voltage applied by the first semiconductor layer 110 and the metal layer 130. For example, as... Figure 1As shown, the contacts connected to the metal layer 130 can be used to apply a voltage (V), and the contacts connected to the first semiconductor layer 110 can be used as ground (G). In another example, the contacts can be interchanged, i.e., the V contact can be connected to the first semiconductor layer 110, and the G contact can be connected to the metal layer 130. The electro-optic material can be configured such that the refractive index of the electro-optic material is based on the thickness across the electro-optic material layer 120 (e.g., in...). Figure 1 The refractive index changes with the applied voltage (either in the vertical or y-direction). Depending on the manufacturing process, the molecules of the electro-optic material can be oriented to promote a change in refractive index according to the direction of the applied voltage (e.g., the y-direction). As explained above, in response to the change in the refractive index of the electro-optic material, light passing through the electro-optic material can undergo a phase shift, thereby enabling modulation of the voltage applied across the thickness of the electro-optic material layer 120.

[0061] Electro-optic effects can be linear electro-optic effects, also known as the Pockels effect, where an electric field applied to an electro-optic material (e.g., via an applied voltage) induces a linear change in the refractive index proportional to the strength of the electric field. The applied electric field induces dipole moments in the molecules of the electro-optic material that align with the electric field. This rearrangement and induced polarization alters how the electro-optic material interacts with light, which is reflected in the change in the refractive index value. In the absence of an electric field, the molecules return to their original symmetry state, and the refractive index of the material also returns to its initial value. The strength of the electric field, which can be based on the amount of voltage applied, determines the change in refractive index relative to its initial value. In some embodiments, the electro-optic effect can include a second-order electro-optic effect, also known as the Kerr effect, where the refractive index changes at a faster rate in response to a change in the electric field than in the Pockels effect, and can match the higher response rate requirements of high-speed interconnects such as those used for Tbps communication links.

[0062] In some embodiments, the electro-optic material of the electro-optic material layer 120 may be a semiconductor material configured with quantum dots to generate an electro-optic effect. In other embodiments, the electro-optic material is a crystalline material, and the electro-optic effect is caused by a crystal lattice in the arrangement of the material molecules. In other embodiments, the electro-optic material may be other materials, such as optical crystals, polymers, dielectrics, organic materials, nanocomposite materials, or metamaterials.

[0063] In the electromagnetic waveguide 100, an electro-optic material layer 120 and a metal layer 130 are configured to confine the plasmon resonance modes of the guided wave in the electromagnetic waveguide 100 along its length (e.g., the z-direction). The electro-optic material layer 120 and the metal layer 130 form the core layer of the electromagnetic waveguide 100, within which the guided wave propagates. A first semiconductor layer 110 and a second semiconductor layer 140 effectively form a cladding that confines the guided wave propagating in the thickness direction (e.g., the y-direction) of the electromagnetic waveguide 100. Accordingly, the refractive index of the electro-optic material layer 120 is less than the respective refractive indices of the first semiconductor layer 110 and the second semiconductor layer 140.

[0064] In some embodiments, the electromagnetic waveguide 100 is configured to facilitate the propagation of guided waves at a specific frequency or frequency range within the visible or near-infrared spectral range. The respective widths and thicknesses of the first semiconductor layer 110, the electro-optic material layer 120, the metal layer 130, and the second semiconductor layer 140 can be configured to allow the guided waves to propagate within a specific frequency range, such as 1.2 and 1.8 micrometers (µm). It propagates in the near-infrared range between [the specified frequencies]. The thickness of the layers can be set according to the frequency range. The widths of the layers can be the same or different. For example, the cross-section of the electromagnetic waveguide 100 can be a rectangle with a certain width across the layers. In another example, at least one of the two sidewalls of the cross-section of the electromagnetic waveguide 100 can be tapered by changing the width of the layers in the electromagnetic waveguide 100.

[0065] In an embodiment, such as Figure 1 As shown, the thickness of the electro-optic material layer 120 is less than the respective thicknesses of the first semiconductor layer 110 and the second semiconductor layer 140. In some examples, the ratio of the thickness of the metal layer 130 to the wavelength of light in the coupled plasmon mode (e.g., in the electro-optic material layer 120) is less than about 0.1. That is, the wavelength of light in the coupled plasmon mode is at least ten times the thickness of the metal layer 130. Furthermore, the thickness of the metal layer 130 is also less than the respective thicknesses of the first semiconductor layer 110 and the second semiconductor layer 140. In some embodiments, the respective thicknesses of the electro-optic material layer 120 and the metal layer 130 are less than the width of the electromagnetic waveguide 100. For example, the respective thicknesses of the electro-optic material layer 120 and the metal layer 130 can be on the order of tens of nanometers, and the width of the electromagnetic waveguide 100 can be on the order of hundreds of nanometers. The thickness of the electro-optic material layer 120 can also be greater than the thickness of the metal layer 130. Figure 1 In the example shown, the width of the electromagnetic waveguide 100 across each layer is greater than the thickness of each layer. In this example, the width of the electromagnetic waveguide 100 can be approximately 800 nanometers (nm) or less. Furthermore, the overall thickness of the electromagnetic waveguide 100 can be approximately several hundred nanometers. In the example, the thicknesses of the electro-optic material layer 120, the metal layer 130, the first semiconductor layer 110, and the second semiconductor layer 140 are approximately 20 nm, 10 nm, 200 nm, and 180 nm, respectively. In the example, both the first semiconductor layer 110 and the second semiconductor layer 140 are Si layers, the metal layer 130 is an aluminum (Al) layer, and the electro-optic material layer 120 is an electro-optic layer (bulk, interface, or stress-induced), which may include lithium niobate (LiNbO3), crystalline silicon, or doped silicon oxide (SiO2) layers.

[0066] In some embodiments, the metal layer 130 is connected to a contact portion configured to apply a voltage across the thickness direction (e.g., the y-direction) of the electro-optic material layer 120. The electromagnetic waveguide 100 further includes a second metal layer ( Figure 1 (Not shown in the diagram), the second metal layer is connected to the first semiconductor layer 110, such as through vias or fin structures in the electro-optic material layer 120, and to a second contact to apply a voltage bias across the electro-optic material layer 120. In other embodiments, the electromagnetic waveguide 100 may include a contact (i.e., metal layer 130) where voltage can be biased at different ends.

[0067] In some embodiments, Figure 1 The electromagnetic waveguide 100 can be summarized as including a first layer assembly comprising a first semiconductor layer 110 and an electro-optic material layer 120, and a second layer assembly comprising a metal layer 130 and a second semiconductor layer 140. The electro-optic material layer 120 and the metal layer 130 are adjacent to each other. However, the first semiconductor layer 110 may not necessarily be directly adjacent to the electro-optic material layer 120, and the metal layer 130 may not necessarily be directly adjacent to the second semiconductor layer 140. For example, one or more intermediate layers may exist between the first semiconductor layer 110 and the electro-optic material layer 120, or between the metal layer 130 and the second semiconductor layer 140, without departing from the scope of this disclosure.

[0068] Figure 2 A cross-sectional view of an exemplary electromagnetic waveguide 200 according to an embodiment of the present disclosure is illustrated. The electromagnetic waveguide 200 is an electro-optic CHPW, comprising a substrate 205, a first semiconductor layer 210 on the substrate 205, and an electro-optic material layer 220 disposed on the first semiconductor layer 210. The electromagnetic waveguide 200 also includes a metal layer 230 on the electro-optic material layer 220, a second semiconductor layer 240 on the metal layer 230, and a third semiconductor layer 250. Both the electro-optic material layer 220 and the second semiconductor layer 240 are in contact with the metal layer 230 on corresponding sides and surfaces. The layers of the electromagnetic waveguide 200 can be formed using semiconductor chip fabrication techniques, such as those used for CMOS.

[0069] In electromagnetic waveguide 200, the first semiconductor layer 210 and the electro-optic material layer 220 can be configured similarly to the first semiconductor layer 110 and the electro-optic material layer 120 of electromagnetic waveguide 100, respectively. The third semiconductor layer 250 can also be configured similarly to the second semiconductor layer 140. The electro-optic material layer 220, the metal layer 230, and the second semiconductor layer 240 form the core layer of electromagnetic waveguide 200, within which guided waves propagate along the length (e.g., the z-direction) of electromagnetic waveguide 200. The first semiconductor layer 210 and the third semiconductor layer 250 form a cladding layer, which constrains the guided waves propagating in the thickness direction (e.g., the y-direction) of electromagnetic waveguide 200. Accordingly, the refractive indices of the electro-optic material layer 220 and the second semiconductor layer 240 are lower than the refractive indices of the first semiconductor layer 210 and the third semiconductor layer 250, respectively. The substrate 205 can provide mechanical support for the other layers of electromagnetic waveguide 200 and can also be used to bond the layers to a circuit board for integrating photonic and electronic components onto an optoelectronic platform. The substrate 205 can be composed of a suitable material for CMOS or other semiconductor chip processing and manufacturing technologies. For example, the substrate 205 can be composed of polysilicon (poly-Si). Voltage can also be applied through corresponding contacts connected to the first semiconductor layer 210 and the metal layer 230. For example, as... Figure 2 As shown, the contact connected to the metal layer 230 can be used to apply a voltage (V), and the contact connected to the first semiconductor layer 210 can be used as ground (G). In another example, the contacts can be interchanged, i.e., the V contact can be connected to the first semiconductor layer 210 and the G contact can be connected to the metal layer 230.

[0070] In other embodiments, the electromagnetic waveguide configured as an electro-optic CHPW includes more than one electro-optic material layer in contact with a metal layer at the core of the electromagnetic waveguide. For example, a first electro-optic material layer and a second electro-optic material layer may be formed to contact the metal layer on corresponding sides and surfaces of the metal layer. The first and second electro-optic material layers may include the same or different electro-optic materials. For example, the first electro-optic material layer may be configured to provide a Pockels effect, and the second electro-optic material layer may be configured to provide a Kerr effect. Furthermore, the first and second electro-optic material layers may be biased by the same applied voltage, or may be biased by different voltages to control the corresponding electro-optic effects. In some examples, the electromagnetic waveguide may include two additional contact layers to combine with the metal layer to provide corresponding voltages to the first and second electro-optic materials.

[0071] Figure 3A The illustration shows a three-dimensional (3D) cross-sectional view of an exemplary electromagnetic waveguide 300 according to an embodiment of the present disclosure. Figure 3B and Figure 3CSimulated field distributions of antisymmetric and symmetric modes formed in waveguide 300 are illustrated. This electromagnetic waveguide 300 is an electro-optic CHPW, comprising a first semiconductor layer 310 and an electro-optic material layer 320 disposed on the first semiconductor layer 310. The electromagnetic waveguide 300 also includes a metal layer 330 on the electro-optic material layer 320 and a second semiconductor layer 340 on the metal layer 330. Both the first semiconductor layer 310 and the metal layer 330 are in contact with the electro-optic material layer 320 on corresponding sides and surfaces. These layers can be formed using semiconductor chip fabrication techniques, such as CMOS or other suitable manufacturing processes for semiconductor devices.

[0072] The layers of electromagnetic waveguide 300 can be configured similarly to the corresponding layers of electromagnetic waveguide 100. A metal layer 330 is connected to a first contact portion configured to apply a voltage across the thickness direction y of the electro-optic material layer 320. Electromagnetic waveguide 300 also includes a first metal contact portion 345 connected to a first semiconductor layer 310 and a second metal contact portion 375 connected to the metal layer 330. The first metal contact portion 345 and the second metal contact portion 375 can be composed of the same metal as the metal layer 330 and are configured as voltage contacts and ground contacts to apply a voltage across the thickness of the electro-optic material layer 320.

[0073] In an embodiment, the first metal contact 345 may include a first portion 350, which forms a metal layer over the layer of the electromagnetic waveguide 300. The first metal contact 345 also includes a second portion 360, which may be as follows: Figure 3A The fin-shaped portion 360 is embedded through the layers of the electromagnetic waveguide 300. The second portion 360 contacts the first semiconductor layer 310, while the first metal contact 345 is insulated from the remaining layers of the electromagnetic waveguide 300. For example, the electromagnetic waveguide 300 may also include a fin 370 formed of an electrically insulating material through the layers of the electromagnetic waveguide 300 to isolate the first portion 350 and the second portion 360 of the first metal contact 345 from the second semiconductor layer 340, the metal layer 330, and the electro-optic material layer 320, as shown. Figure 3A As shown.

[0074] The second metal contact 375 also includes a first portion 380 located above the layers of the electromagnetic waveguide 300, and a second portion 390, which may be fin-shaped and embedded through the layers of the electromagnetic waveguide 300. The second portion 390 contacts the metal layer 330, while the second metal contact 375 is insulated from the remaining layers of the electromagnetic waveguide 300. For example, the electromagnetic waveguide 300 may also include a first fin 395 formed of an electrically insulating material through the layers of the electromagnetic waveguide 300 to isolate the first portion 380 and the second portion 390 of the second metal contact 375 from the second semiconductor layer 340, and a second fin 397 of electrically insulating material to isolate the second portion 390 from the electro-optic material layer 320 and the first semiconductor layer 310, such as... Figure 3A As shown.

[0075] The first metal contact 345 is a second contact configured to cooperate with the metal layer 330 to apply a voltage across the thickness of the electro-optic material layer 320. For example, the metal layer 330 can be configured as a power contact, and the second metal layer of the first metal contact 345 (i.e., the first portion 350), which contacts the first semiconductor layer 310, can be configured as a ground contact. In some embodiments, the voltage can vary from a minimum to a maximum value to achieve a corresponding desired range from minimum to maximum refractive index in the electro-optic material layer 320. In the example, the minimum voltage value is set to zero to obtain the initial refractive index value of the electro-optic material.

[0076] In electromagnetic waveguides 100, 200, and 300, the layer arrangement prioritizes optical modes within electro-optic material layers 120, 220, and 320. This helps maximize the overlap between the mode and the electro-optic material layers 120, 220, and 320, thereby reducing the voltage difference required for optical modulation (e.g., within the electro-optic material layers). Confining the coupling mode within electro-optic material layers 120, 220, and 320 reduces insertion loss in devices using any of the electromagnetic waveguides 100, 200, and 300, and also reduces switching power consumption. Figure 3A In the exemplary waveguide 300, optical mode overlap results in a higher proportion of mode intensity in the electro-optic material layer 320 compared to the case of a conventional non-plasma modulator using electro-optic materials.

[0077] In some embodiments, an electro-optical CHPW (e.g., any one of electromagnetic waveguides 100, 200, or 300) can be used as part of the optical components in a photonic device, such as in conjunction with one or more light sources, photodetectors, resonant elements, optical waveguides, or combinations thereof. Such a photonic device can be integrated with electronic components on the same platform, such as a circuit board or chip. Examples of such integrated optoelectronic platforms include interconnect chips or circuit boards for connecting electronic devices such as switches, routers, and servers, for example, using optical fibers. Electro-optical CHPWs can also be used for coupling between any suitable device or integrated optoelectronic platform in the general sense, including interconnect devices, electronic devices, photonic devices. For example, a transceiver can be combined with a photonic device on the same or different layers of a platform stack. Components in the same platform layer can also be optically coupled via electro-optical CHPWs, for example, in combination with non-electro-optical CHPWs or other types of optical waveguides. In other embodiments, a photonic device including an electro-optical CHPW can be coupled to a separate device or platform via optical fiber.

[0078] Figure 4 An exemplary optical device 400 including an electro-optical CHPW 405 is illustrated according to some embodiments. The optical device 400 may be part of a photonic device or an integrated optoelectronic platform that includes both photonic and electronic components. In the example, the integrated optoelectronic platform including the optical device 400 may be an interconnect device for enabling communication between electronic devices using optical fibers. The interconnect device is configured to convert optical communication signals on an optical link into electrical signals for processing by the electronic components. The optical communication signals may be data signals optically modulated at modern communication data rates such as Tbps or tens of Tbps.

[0079] The electro-optic CHPW 405 includes a first semiconductor layer 410, an electro-optic material layer 420 on the first semiconductor layer 410, a metal layer 430 on the electro-optic material layer 420, and a second semiconductor layer 440 on the metal layer 430. The layers of the electro-optic CHPW 405 can be configured similarly to the corresponding layers of the electromagnetic waveguide 100. In other embodiments (not shown)... Figure 4 As shown in the diagram, the electro-optic CHPW 405 may further include additional layers, such as a third semiconductor layer 250 of the second electromagnetic waveguide 200. The electro-optic CHPW 405 may also include a second contact layer in addition to the metal layer 430. In some embodiments, the electro-optic CHPW 405 may include a second electro-optic material layer in contact with the metal layer 430. Furthermore, the layers of the electro-optic CHPW 405 may be supported by a substrate, such as by the substrate 205 of the electromagnetic waveguide 300.

[0080] The optical device 400 also includes a second optical waveguide 450, which is optically coupled to the electro-optic CHPW 405 via a ring resonator 460. The second optical waveguide 450 can be any type of optical waveguide including a core layer and two cladding layers on opposite sides and surfaces of the core layer. The core layer guides the propagation of light waves along the length of the second optical waveguide 450 (e.g., the z-direction), and the cladding layers constrain the guided wave in directions orthogonal to the propagation direction (e.g., the x and y directions). The second optical waveguide 450 may not include a metal layer and may not support plasmon mode confinement. In other embodiments, the second optical waveguide 450 may be a non-electro-optic CHPW that includes a metal layer and is configured to support plasmon mode confinement but does not include an electro-optic material.

[0081] A ring resonator 460 is a resonant element that serves as a ring optical waveguide for light of a specific frequency or frequency range. The dimensions of the ring resonator 460 allow light waves of a specific frequency within a frequency range to be guided within a ring optical path. By placing the electro-optical CHPW 405 and the second optical waveguide 450 at a sufficiently close distance from the ring resonator 460, light waves can be transmitted between the electro-optical CHPW 405 and the second optical waveguide 450 via the ring resonator 460. The optical device 400 can be used to transmit and redirect light waves between adjacent waveguides, such as transmitting light waves from any other type of optical waveguide to the electro-optical waveguide, to manipulate or modulate light waves of a specific frequency within a frequency range.

[0082] Figure 5 The illustration shows another exemplary optical device 500 including an electro-optical CHPW 505 according to some embodiments. The optical device 500 can be part of a photonic device or an integrated optoelectronic platform, including both photonic and electronic components, such as high-speed interconnect chips or circuit boards. For example, the interconnect device can be an optoelectronic switch for an optical link with a Tbps data rate. The electro-optical CHPW 505 is a CHPW waveguide that supports the confinement of plasmon modes and includes an electro-optic layer configured to manipulate plasmon modes and modulate the guided wave. As described above, a voltage can be applied to the electro-optic layer to achieve a phase shift in the coupled plasmon modes therein, thereby enabling a modulation scheme. For example, the electro-optic layer can modulate the phase of the coupled plasmon modes therein based on a voltage applied across the thickness of the electro-optic layer. In response to a first voltage value, the phase can be shifted by a first phase shift value; in response to a second voltage value, the phase can be shifted by a second phase shift value. The above description is merely illustrative, and the embodiments described herein are not necessarily limited to implementing only two phase shift amounts. In some implementations, the electro-optical CHPW 505 is configured similarly to any of the electromagnetic waveguides 100, 200, or 300.

[0083] The optical device 500 further includes an optical cavity 590 formed by two reflective layers 590a and 590b. Figure 5 As shown, reflective layers 590a and 590b are oriented parallel to each other and have corresponding surfaces facing the ends of the electro-optical CHPW 505. The optical cavity is a resonant element configured to transmit specific frequencies or narrow bandwidths (e.g., a narrow frequency range with sharp peaks) separated by equal frequency intervals. The transmitted frequencies or narrow bandwidths may correspond to optical communication channels. The corresponding surfaces of reflective layers 590a and 590b are configured as optical reflectors for reflecting light emitted from the electro-optical CHPW 505. Light can be transmitted to the electro-optical CHPW 505 using other optical elements.

[0084] For example, optical device 500 may also include a ring resonator optically coupled to both the electro-optical CHPW 505 and the second waveguide, configured similarly to optical device 400. Reflective layers 590a and 590b may be configured based on selected materials and thicknesses to reflect and travel multiple times between two corresponding surfaces of the reflective layers 590a and 590b, the two corresponding surfaces being located at opposite ends and facing the electro-optical CHPW 505. Simultaneously, reflective layers 590a and 590b allow light of a specific frequency or narrow band to propagate through and away from the electro-optical CHPW 505. In this example, optical device 500 may function as part of an optical switch or optical multiplexer, controlled by the amount of voltage applied to the electro-optical CHPW 505 to modulate the wave of the operating frequency or band of the respective optical channel.

[0085] In some embodiments, the aforementioned electro-optical CHPW and the corresponding photonic device may be part of an integrated optoelectronic platform (e.g., a chip circuit board), such as for interconnect devices. Figure 6An exemplary integrated optoelectronic platform 600 including an electro-optical CHPW is illustrated according to some embodiments. The integrated optoelectronic platform 600 includes a transceiver 610 coupled to an optical link via an optical fiber 630. The transceiver 610 includes a light source 615 coupled to the optical fiber 630 via an electro-optical CHPW (EO-CHPW) 620. The light source 615 may be a light-emitting diode (LED) or a collection of LEDs having a wider emission spectrum than a single LED. In other embodiments, the light source 615 may include one or more laser devices coupled to the integrated optoelectronic platform 600 via an optical fiber. The EO-CHPW 620 may be controlled by a voltage from a power supply (not shown) to modulate the light transmitted from the light source 615 to the optical fiber 630. The transceiver 610 also includes a photodetector 640 coupled to the same optical fiber 630. The photodetector 640 may be a photodiode or a collection of photodiodes having a wider detection spectrum than a single photodiode.

[0086] like Figure 6 As shown, the components of transceiver 610 are optically coupled via optical waveguides forming optical paths in transceiver 610. In some embodiments, transceiver 610 may further include one or more ring resonators for redirecting light waves between optical paths or optical waveguides. For example, the ring resonator 625 in transceiver 610 can be coupled via a corresponding waveguide (such as... Figure 6 (As shown) Optically coupled to fiber 630 and EO-CHPW 620. Accordingly, ring resonator 625 can guide light waves on a first optical path from light source 615 to fiber 630. In other embodiments, ring resonator 625 can be directly optically coupled to EO-CHPW 620, which is configured similarly to optical device 400. In another embodiment, a second ring resonator (not shown) is optically coupled to fiber 630 and EO-CHPW 620. Figure 6 (As shown in the diagram) Optical coupling can be achieved through corresponding waveguides to fiber 630 and photodetector 640. The second ring resonator can guide the light wave along a second optical path from fiber 630 to photodetector 640.

[0087] In some embodiments, the ring resonator 625 may also be optically coupled to other optical paths or waveguides. For example, the transceiver 610 may include multiple light sources and multiple photodetectors having corresponding EO-CHPWs, which are located on corresponding optical paths and optically coupled to the fiber optic 630 via the ring resonator 625. In some embodiments, the EO-CHPW 620 may be disposed in a corresponding optical cavity, for example, in a configuration similar to that of the optical device 500. In another embodiment, the integrated optoelectronic platform 600 may include an optical waveguide instead of the fiber optic 630.

[0088] Figure 7The illustration shows another exemplary integrated optoelectronic platform 700 including an EO-CHPW according to some embodiments. The integrated optoelectronic platform 700 includes a transceiver 710 that can be coupled to an optical link via an optical fiber 730. The transceiver 710 includes a light source 715 and a corresponding photodetector 740. The light source 715 is optically coupled to the optical fiber 730 via an EO-CHPW 720, which can be controlled by a voltage from a power supply to modulate light propagating from the light source 715 to the optical fiber 730. The optical fiber 730 may include one or more optical fibers, optical waveguides, or a combination of both.

[0089] The EO-CHPW 720 can be optically coupled to the light source 715 via a first optical waveguide 725 in a first optical path of the transceiver 710, and optically coupled to the optical fiber 730 via a second optical waveguide 735. The photodetector 740 can be coupled to the optical fiber 730 via a third optical waveguide 747, a fourth optical waveguide 749, and a ring resonator 745 for redirecting light between the third and fourth optical waveguides 747 and 749 in a second optical path. The second optical path is used to transmit light from the optical fiber 730 to the photodetector 740. In another embodiment, the EO-CHPW 720 is directly coupled to or coupled via an optical waveguide to a common ring resonator, which is optically coupled to the light source 715 via a corresponding optical waveguide.

[0090] The transceiver 710 also includes a control circuit 750 electrically coupled to the EO-CHPW 720. The control circuit 750 controls and regulates the voltage applied to the EO-CHPW 720 to modulate light waves in a first optical path of the light source 715. The control circuit 750 may also be electrically coupled to the light source 715 and the photodetector 740, and control the operation of the light source 715 and the photodetector 740. In some embodiments, the transceiver 710 includes a plurality of light sources 715 and corresponding photodetectors 740. The plurality of light sources 715 can be coupled to an optical fiber 730 via corresponding and separate EO-CHPWs 720. Each EO-CHPW 720 can be electrically coupled to the control circuit 750 to regulate a corresponding voltage for each EO-CHPW 720. In other embodiments, the same EO-CHPW 720 can be coupled to a plurality of light sources 715.

[0091] In some embodiments, multiple transceivers, such as transceivers similar to transceiver 610 or 710, can be coupled to an optical link via a corresponding EO-CHPW 720. Figure 8 The illustration shows an integrated optoelectronic platform 800 including an EO-CHPW according to some embodiments. Figure 8The configuration of the integrated optoelectronic platform 800 connects multiple transceivers, which can correspond to different optical channels and allow modulation of optical carriers transmitted between different transceivers and the platform.

[0092] The integrated optoelectronic platform 800 includes multiple first transceivers 810, which are coupled to multiple second transceivers 812 via a shared optical link. The optical link may include one or more optical fibers, optical waveguides, or a combination of both. For example, as... Figure 8 As shown, the optical link includes a first optical fiber 830 optically coupled to a first transceiver 810, and a second optical fiber 832 optically coupled to a second transceiver 812 and the first optical fiber 830. The first transceiver 810 and the second transceiver 812 may include corresponding light sources and photodetectors, configured similarly to transceivers 610 or 710. The first transceiver 810 is coupled in parallel to the first optical fiber 830 via a corresponding first EO-CHPW 820. Each first EO-CHPW 820 is optically coupled to a corresponding light source 811 in the first transceiver 810 and the first optical fiber 830 via an optical waveguide on a corresponding optical path. Figure 8 As shown, the first transceiver 810 includes a photodetector 813, which is coupled to the first optical fiber 830 via a corresponding waveguide in the absence of an EO-CHPW. Either the light source 811 or the photodetector 813 can also be coupled to a corresponding resonator along a corresponding optical path.

[0093] For example, in the first optical path, the first EO-CHPW 820 is coupled to the light source 811 in the first transceiver 810a via a corresponding optical waveguide 825, and to the first optical fiber 830 via optical waveguide 835. The first EO-CHPW 820 may be electrically coupled to a control circuit 845 for controlling and adjusting the voltage applied to the first EO-CHPW 820 to modulate the light waves in the first optical path of the first transceiver 810a. The optical path of the light source 811 may also include a ring resonator. For example, in the second optical path, the second EO-CHPW 840 is coupled to the corresponding light source 811 of the first transceiver 810b via optical waveguides 827 / 828 and a ring resonator 829, and to the first optical fiber 830 via optical waveguide 837.

[0094] The second transceiver 812 can also be coupled to a corresponding second EO-CHPW 840 along a corresponding optical path leading to the second optical fiber 832. For example, the second transceiver 812a is coupled to the second optical fiber 832 along a corresponding optical path via the corresponding second EO-CHPW 840 and an optical waveguide. The second EO-CHPW 840 of the second transceiver 812a is also coupled to a corresponding control circuit 850. The second transceiver 812 also includes a photodetector 814, which is coupled to the second optical fiber 832 via a corresponding waveguide in the absence of an EO-CHPW.

[0095] In other embodiments, aspects of the design and components of the EO-CHPW, optical devices, transceivers, and integrated optoelectronic platforms can be combined in any suitable manner to develop optical devices and systems for transmitting optical and electrical signals. These components can be integrated on the same platform stack, on different stacks of the same platform, or on different platforms such as those using fiber optic electrical coupling or optical coupling.

[0096] In this written disclosure and claims, the terms “comprising” and “including” (and variations thereof) are used in an open-ended manner and should therefore be understood as “including but not limited to”. Unless otherwise stated, the use of “or” throughout this document is not required to be mutually exclusive, and the singular forms “a,” “an,” and “the” are intended to cover the plural forms unless the context clearly indicates otherwise.

[0097] It should be noted that the terms “coupled,” “coupled,” “being coupled,” or other variations thereof, as used herein, can refer to an indirect connection or a direct connection. For example, if a first component is “coupled” to a second component, the first component may be indirectly connected to the second component via another component, or it may be directly connected to the second component.

[0098] In this document, the term "multiple" means two or more. For example, "multiple components" means two or more components.

[0099] The phrase “based on” does not mean “based on only” unless otherwise explicitly stated. In other words, the word “based on” includes both “based on only” and “based on at least”.

[0100] In this document, the term “exemplary” means “used as an example, instance or illustration” and does not necessarily imply that the example has priority or superiority over any other configuration or implementation.

[0101] In this document, the term “and / or” covers any combination of the listed items. For example, “A, B and / or C” includes the following groups of elements: A only, B only, C only, A and B without C, A and C without B, B and C without A, and all of A, B and C.

[0102] The description of various embodiments in this disclosure is intended for illustrative purposes and is not intended to be exhaustive or limited to the disclosed embodiments. The description of the disclosed embodiments is intended to enable those skilled in the art to implement or utilize this disclosure. The terminology used herein is chosen to best explain the principles, practical application, or technical improvements relative to existing market technology of the various embodiments, or to facilitate understanding of the disclosed embodiments by those skilled in the art. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. For example, those skilled in the art will recognize that several corresponding alternative and equivalent structural details may be employed. Therefore, this disclosure is not intended to be limited to the embodiments shown herein, but should be given the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. An optical device, comprising: Electromagnetic waveguide, the electromagnetic waveguide comprising: The first layer set includes: First semiconductor layer; and Electro-optic material layer; The second-level set includes: Metal layer; and Second semiconductor layer, The electro-optic material layer is adjacent to the metal layer. The electromagnetic waveguide is configured to generate coupled plasmon polariton modes in the electro-optic material layer, and The electro-optic material layer is configured to modulate light in the coupled plasmon resonance mode based on a voltage applied across the thickness of the electro-optic material layer.

2. The optical device according to claim 1, wherein, The first semiconductor layer is adjacent to the electro-optic material layer, and the second semiconductor layer is adjacent to the metal layer.

3. The optical device according to claim 1, wherein, The electro-optic material layer is configured to modulate the phase of the coupled plasmon resonance mode based on the voltage, wherein, in response to the voltage being a first voltage value, the phase is shifted by a first phase shift value, and wherein, in response to the voltage being a second voltage value, the phase is shifted by a second phase shift value.

4. The optical device according to claim 1, wherein, The thickness of the electro-optic material layer is less than the thickness of each of the first semiconductor layer and the second semiconductor layer, and wherein the ratio of the thickness of the metal layer to the wavelength of the light in the coupled plasmon resonance mode is less than 0.

1.

5. The optical device according to claim 4, wherein, The thickness of the metal layer is less than the thickness of each of the first semiconductor layer and the second semiconductor layer.

6. The optical device according to claim 5, wherein, The thickness of the electro-optic material layer and the metal layer is less than the width of the electromagnetic waveguide.

7. The optical device according to claim 5, wherein, The thicknesses of the electro-optic material layer and the metal layer are each on the order of tens of nanometers.

8. The optical device according to claim 1, wherein, The electro-optic material layer includes a crystal lattice configured to produce an electro-optic effect, wherein the electro-optic effect includes changing the refractive index of the electro-optic material layer in response to a voltage applied across the thickness of the electro-optic material layer.

9. The optical device according to claim 1, wherein, The metal layer is coupled to a contact portion, which is configured to apply the voltage across the thickness of the electro-optic material layer.

10. The optical device according to claim 9, wherein, The electromagnetic waveguide further includes a second metal layer in contact with the first semiconductor layer, wherein the second metal layer is coupled to a second contact portion, the second contact portion being configured to apply the voltage across the thickness of the electro-optic material layer.

11. The optical device according to claim 1, wherein, The refractive index of the first semiconductor layer is greater than the refractive index of the electro-optic material layer.

12. The optical device according to claim 1, wherein, The second layer assembly includes a third semiconductor layer on the second semiconductor layer, wherein the refractive index of the second semiconductor layer is less than the refractive index of the third semiconductor layer.

13. The optical device according to claim 1, wherein, The second layer assembly includes a second electro-optic material layer that is in contact with the metal layer, wherein the first electro-optic material layer and the second electro-optic material layer are in contact with the metal layer on corresponding sides and surfaces of the metal layer.

14. The optical device according to claim 1, wherein, The electro-optic material layer includes lithium niobate (LiNbO3), and at least one of the first semiconductor layer and the second semiconductor layer includes silicon (Si) or doped silicon oxide (SiO2).

15. The optical device of claim 1, further comprising a resonant element optically coupled to the electro-optic material layer, wherein, The resonant element is: a) a ring resonator adjacent to the electro-optic material layer, or b) an optical cavity, wherein the electro-optic material layer is disposed within the optical cavity.

16. A transceiver device, comprising: An electro-optic coupled hybrid plasmon waveguide (CHPW), comprising: Electro-optic material layer; A semiconductor layer adjacent to the first surface of the electro-optic material layer; and A metal layer adjacent to the second surface of the electro-optic material layer. The electro-optical CHPW is configured as the transmission light. The electro-optic CHPW is configured to generate coupled plasmon polariton modes in the electro-optic material layer, and The electro-optic material layer is configured to modulate the light in the coupled plasmon resonance mode based on a voltage applied across the thickness of the electro-optic material layer.

17. The transceiver device of claim 16, further comprising one or more light sources optically coupled to the electro-optical CHPW, wherein, The electro-optical CHPW is optically coupled to one or more optical paths of the light source, and the electro-optical CHPW is an emitter modulator.

18. The transceiver device of claim 16, further comprising a control circuit coupled to the electro-optical CHPW, wherein, The control circuit is configured to control the voltage applied across the thickness of the electro-optic material layer.

19. The transceiver device of claim 16, further comprising one or more photodetectors, wherein, The electro-optical CHPW is optically coupled to one or more optical paths of the photodetector.

20. The transceiver device of claim 16 further includes one or more waveguides or optical fibers, said one or more waveguides or optical fibers being coupled to the electro-optical CHPW and respectively coupled to the photodetector.

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