Method of determining operational data, computer program and lithographic apparatus

Abstract

Disclosed herein is a computer system configured to perform a method of determining operational data for a control system of a lithographic apparatus, the method comprising: determining initial operational data for performing an exposure process on a substrate; repeatedly changing the initial operational data and determining one or more performance metrics for the changed operational data in order to determine a change to the initial operational data that improves one or more of the performance metrics; and using the operational data with the applied change in order to improve one or more of the performance metrics; wherein: the operational data comprises a route for the substrate to follow for performing the exposure process and movement of the substrate along the route; and the applied change to the operational data comprises a change to the route and / or a change to acceleration of the substrate along a portion of the route.

Description

Cross-references to related applications

[0001] This application claims priority to EP application 24152597.1, filed January 18, 2024; EP application 24173146.2, filed April 29, 2024; EP application 24178480.0, filed May 28, 2024; and EP application 24199612.3, filed September 10, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This invention relates to a method for determining operational data for controlling substrate movement during an exposure process. For a given defect rate performance, embodiments include using a model to determine changes to the operational data to improve yield. Embodiments also include using the model to determine changes to the operational data to improve defect rate performance. Background Technology

[0003] A lithography apparatus is a machine configured to apply a desired pattern to a substrate. For example, lithography apparatus can be used to manufacture integrated circuits (ICs). For instance, a lithography apparatus projects a pattern (often referred to as a “design layout” or “design”) from a patterning apparatus (such as a mask) onto a layer of radiation-sensitive material (resist) disposed on a substrate (such as a wafer). Known lithography apparatuses include: so-called steppers, in which each target portion is irradiated by exposing the entire pattern to the target portion at once; and so-called scanners, in which each target portion is irradiated by scanning the pattern via a radiation beam in a given direction (“scanning” direction) while simultaneously scanning the substrate parallel to or antiparallel to this direction.

[0004] As semiconductor manufacturing processes continue to advance, the size of circuit elements has been continuously shrinking, while the number of functional elements (such as transistors) in each device has been steadily increasing for decades, following a trend often referred to as "Moore's Law." To keep pace with Moore's Law, the semiconductor industry has been pursuing technologies capable of creating increasingly smaller features. To project patterns onto a substrate, photolithography equipment uses electromagnetic radiation. The wavelength of this radiation determines the minimum size of the features that can be patterned on the substrate. Typical wavelengths currently used are 365 nanometers (i-line), 248 nanometers, 193 nanometers, and 13.5 nanometers.

[0005] Further improvements in resolution for smaller features can be achieved by providing an immersion liquid (such as water) with a relatively high refractive index on the substrate during exposure. The effect of the immersion liquid is that it enables imaging of smaller features because the exposure radiation will have a shorter wavelength in the liquid compared to in the gas. The effect of the immersion liquid can also be viewed as increasing the effective numerical aperture (NA) of the system and also increasing the depth of focus.

[0006] The immersion liquid can be confined by a fluid handling structure to a localized area between the projection system of the lithography apparatus and the substrate.

[0007] The photolithography process usually needs to be improved. Summary of the Invention

[0008] In immersion lithography, defects can occur in the printed pattern due to bubbles in the immersion liquid and / or droplets left on the substrate surface. Many methods have been proposed to minimize the formation of these bubbles and droplets and mitigate their effects, such as providing a CO2 environment near the immersion liquid; applying special coatings to the substrate and substrate support; extracting gas and liquid from the edge of the substrate and the gap between the substrate support; and altering the scan path and speed. However, it has been impossible to completely eliminate the occurrence of bubbles and droplets and the defects they cause to date.

[0009] In many cases, the defect rate can be reduced (yield increased) by slowing down the scanning speed or by modifying other alternatives at the cost of reducing the yield of the lithography process.

[0010] The embodiments provide techniques for increasing achievable yield given an acceptable defect rate. The embodiments also provide techniques for reducing the defect rate without significantly reducing yield.

[0011] According to a first aspect of the invention, a computer system is provided, the computer system being configured to perform a method for determining operational data of a control system for a lithography apparatus, the method comprising: determining initial operational data for performing an exposure process on a substrate; repeatedly changing the initial operational data and determining one or more performance metrics of the changed operational data to determine changes to the initial operational data for improving the one or more performance metrics; and using the operational data having the applied changes to improve one or more of the performance metrics; wherein: the operational data includes a path of the substrate for performing the exposure process and movement of the substrate along the path; the one or more performance metrics include the total time required for the exposure process, the defect rate of the exposure process, and / or the sustainability of the exposure process; and the applied changes to the operational data include changes to the path and / or changes to the acceleration of a portion of the substrate along the path.

[0012] According to a second aspect of the invention, a method for determining operating data for controlling a photolithography apparatus is provided, the method comprising: determining initial operating data for performing an exposure process on a substrate; repeatedly changing the initial operating data and determining one or more performance metrics of the changed operating data to determine changes to the initial operating data that improve the one or more performance metrics; and using the operating data having the applied changes to improve the one or more performance metrics; wherein: the operating data includes a path of the substrate for performing the exposure process and movement of the substrate along the path; the one or more performance metrics include the total time required for the exposure process, the defect rate of the exposure process, and / or the sustainability of the exposure process; and the applied changes to the operating data include changes to the path and / or changes to the acceleration of the substrate along a portion of the path.

[0013] According to a third aspect of the invention, a method for improving operational data, the operational data being a configuration for an exposure process, the method comprising: providing a configuration for exposing a substrate during the exposure process; based on the configuration, determining a first motion plan having a first duration having a minimum exposure time during the exposure process, the first motion plan including multiple movements along adjacent regions on a first portion of the substrate; determining, according to the first motion plan, a set of locations on the substrate having a defect risk during the exposure process; based on the set of locations, determining a second motion plan having a second duration to reduce the defect risk during the exposure process, the second motion plan including at least one movement along at least two spaced regions on a second portion of the substrate, and the second duration being longer than the first duration; calculating a time difference between the first duration and the second duration; and based on the time difference, modifying the timing of the second motion plan of the exposure process to minimize the time difference, such that the exposure process according to the second motion plan and the exposure process according to the first motion plan are completed substantially simultaneously.

[0014] According to a fourth aspect of the present invention, a method for manufacturing a device using an immersion lithography apparatus is provided, the method comprising performing an exposure process based on operating data determined according to any one of the second and third aspects.

[0015] According to a fifth aspect of the invention, a computer program including computer-interpretable code is provided, which, when executed by the control system of an immersion lithography apparatus, causes the immersion lithography apparatus to perform an exposure process based on operating data determined by either the second or third aspect.

[0016] According to a sixth aspect of the present invention, an immersion lithography apparatus is provided, comprising: a liquid confinement structure; a positioner; a projection system for projecting a radiation beam onto a substrate held by the positioner; and a controller configured to control the positioner and the projection system to perform an exposure process according to operating data determined as in either the second or third aspect.

[0017] According to a seventh aspect of the invention, a computer system is provided, the computer system being configured to perform a method for determining operational data of a control system for a lithography apparatus, the method comprising: obtaining risk level data for each of a plurality of performance metrics for each of a plurality of regions on a surface of a movable structure holding a substrate during a scanning process; and determining operational data to be used during the scanning process when an exposure field of view is over each region, based on the obtained risk level data; wherein the risk level data depends on the nature of the particular product being manufactured and / or user preference data.

[0018] According to an eighth aspect of the invention, a method is provided for determining operational data for controlling a lithography apparatus, the method comprising: obtaining risk level data for each of a plurality of performance metrics for each of a plurality of regions on a surface holding a movable structure of a substrate during a scanning process; and determining operational data to be used during the scanning process when an exposure field of view is over each region, based on the obtained risk level data; wherein the risk level data depends on the nature of the particular product being manufactured and / or user preference data.

[0019] According to a ninth aspect of the invention, a computer program including computer-interpretable code is provided, which, when executed by a control system of an immersion lithography apparatus, causes the immersion lithography apparatus to perform an exposure process according to operating data as determined in the eighth aspect.

[0020] According to a tenth aspect of the present invention, an immersion lithography apparatus is provided, comprising: a liquid confinement structure; a positioner; a projection system for projecting a radiation beam onto a substrate held by the positioner; and a controller configured to control the positioner and the projection system to perform an exposure process according to operating data determined as in the eighth aspect.

[0021] According to an eleventh aspect of the present invention, a computer system is provided, the computer system being configured to perform a method for determining the position of a substrate on a substrate support, the method comprising: obtaining properties of the substrate; obtaining properties of the substrate support; obtaining one or more performance measures of the substrate when it is mounted on the substrate support; and determining the position of the substrate on the substrate support based on the properties of the substrate, the properties of the substrate support, and the one or more performance measures.

[0022] According to a twelfth aspect of the present invention, a method for determining the position of a substrate on a substrate support is provided, the method comprising: obtaining properties of the substrate; obtaining properties of the substrate support; obtaining one or more performance measures of the substrate when mounted on the substrate support; and determining the position of the substrate on the substrate support based on the properties of the substrate, the properties of the substrate support, and the one or more performance measures.

[0023] Other embodiments, features, and advantages of the present invention are described in detail below with reference to the accompanying drawings, as well as the structure and operation of various embodiments, features, and advantages of the present invention. Attached Figure Description

[0024] Embodiments of the invention will now be described by way of example only with reference to the accompanying drawings, in which corresponding reference numerals indicate corresponding parts, and in the drawings: Figure 1 A schematic schematic diagram of a photolithography apparatus is depicted; Figure 2 and Figure 3 Two different versions of a fluid handling system for a photolithography projection device are depicted in cross-section; Figure 4 This is a diagram illustrating an exemplary route for production exposure of a substrate; Figure 5 The method performed within the model according to an embodiment is shown; Figure 6 A substrate mounted on a substrate support is shown schematically; Figure 7 The movement of the substrate positioner 900 relative to the exposure field of view during the scanning process is schematically shown in a plan view; Figure 8 Different regions on the surface of the substrate positioner 900 are shown; Figure 9 This illustrates the actions performed when the exposure field of view is above different regions on the surface of the substrate locator 900; and Figure 10A portion of the fluid processing structure 1101 and a portion of the gap 1102 between the substrate W and the substrate support WT are shown schematically in a plan view.

[0025] The features shown in the accompanying drawings are not necessarily drawn to scale, and the sizes and / or arrangements depicted are not limiting. It should be understood that the drawings include optional features that may not be essential to the invention. Furthermore, not all features of the device are depicted in each drawing, and these drawings may only show some parts relevant to describing a particular feature. Detailed Implementation

[0026] In this document, the terms “radiation” and “beam” are used to cover all types of electromagnetic radiation, including ultraviolet radiation (e.g., with wavelengths of 365 nm, 248 nm, 193 nm, 157 nm, or 126 nm).

[0027] As used herein, the terms “mask,” “mask,” or “patterning apparatus” can be broadly interpreted to refer to a general patterning apparatus that can be used to impart a patterned cross-section to an incident radiation beam, the patterned cross-section corresponding to a pattern to be created in a target portion of a substrate. The term “optical valve” can also be used in this context. Examples of other such patterning apparatuses, besides classic masks (transmissive or reflective masks, binary masks, phase-shifting masks, hybrid masks, etc.), include programmable mirror arrays and programmable LCD arrays.

[0028] Figure 1 A lithography apparatus is schematically depicted. The lithography apparatus includes: an irradiation system (also referred to as an irradiator) IL, configured to modulate a radiation beam B (e.g., UV radiation or DUV radiation); a mask support (e.g., a mask stage) MT, configured to support a pattern forming apparatus (e.g., a mask) MA and connected to a first positioning device PM configured to accurately position the pattern forming apparatus MA according to certain parameters; a substrate support (e.g., a substrate stage) WT, configured to hold a substrate (e.g., a wafer coated with resist) W and connected to a second positioning device PW configured to accurately position the substrate support WT according to certain parameters; and a projection system (e.g., a refractive projection lens system) PS, configured to project a pattern imparted by the pattern forming apparatus MA to the radiation beam B onto a target portion C (e.g., comprising one or more dies) of the substrate W.

[0029] In operation, the irradiation system IL receives a radiation beam B from the radiation source SO, for example, via a beam transmission system BD. The irradiation system IL may include various types of optical components for guiding, shaping, and / or controlling the radiation, such as refractive, reflective, magnetic, electromagnetic, electrostatic, and / or other types of optical components or any combination thereof. The irradiator IL can be used to adjust the radiation beam B to have the desired spatial and angular intensity distribution in its cross-section at the plane of the pattern forming apparatus MA.

[0030] The term “projection system” as used herein should be interpreted broadly to encompass all types of projection systems, including refractive, reflective, refractive-reflective, variable, magnetic, electromagnetic, and / or electrostatic optical systems, or any combination thereof, as appropriate, depending on the exposure radiation used, and / or other factors such as the use of immersion liquids or vacuum. Any use of the term “projection lens” herein may be considered synonymous with the more general term “projection system.”

[0031] The lithography apparatus belongs to the type in which at least a portion of the substrate W can be covered by an immersion liquid (e.g., water) with a relatively high refractive index to fill the immersion space 11 between the projection system PS and the substrate W; this is also known as immersion lithography. Further information on immersion techniques is given in US 6,952,253, which is incorporated herein by reference.

[0032] Photolithography equipment can be of the type having two or more substrate supports WT (also known as "dual platforms"). In such a "multi-platform" machine, substrate supports WT can be used in parallel, and / or a subsequent exposure step preparing substrate W can be performed on a substrate W located on one of the substrate supports WT, while another substrate W on another substrate support WT is used to expose a pattern on the other substrate W.

[0033] In addition to the substrate support WT, the lithography apparatus may include a measurement platform (not depicted in the figures). The measurement platform is arranged to hold sensors and / or cleaning devices. The sensors may be arranged to measure the properties of the projection system PS or the properties of the radiation beam B. The measurement platform may hold multiple sensors. The cleaning devices may be arranged to clean a part of the lithography apparatus, such as a part of the projection system PS or a part of a system providing immersion liquid. The measurement platform may be movable below the projection system PS as the substrate support WT moves away from the projection system PS.

[0034] In operation, a radiation beam B is incident on a pattern forming apparatus (e.g., a mask MA) held on a mask support MT and patterned by a pattern (design layout) present on the pattern forming apparatus MA. Having passed through the mask MA, the radiation beam B is passed through a projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of a second positioning device PW and a position measurement system IF, the substrate support WT can be accurately moved, for example, to position different target portions C in the path of the radiation beam B at a focused and aligned position. Similarly, a first positioning device PM and possibly another position sensor (the other position sensor is not in...) Figure 1 (As explicitly depicted) the pattern forming apparatus MA can be accurately positioned relative to the path of the radiation beam B. The pattern forming apparatus MA and the substrate W can be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks P1, P2 occupy dedicated target portions as illustrated, they can also be located in the space between target portions. When the substrate alignment marks P1, P2 are located between target portions C, they are referred to as scribing alignment marks.

[0035] To clearly illustrate the invention, a Cartesian coordinate system is used. A Cartesian coordinate system has three axes: the x-axis, the y-axis, and the z-axis. Each of these three axes is orthogonal to the other two axes. A rotation about the x-axis is called an Rx rotation. A rotation about the y-axis is called an Ry rotation. A rotation about the z-axis is called an Rz rotation. The x-axis and y-axis define a horizontal plane, while the z-axis is in the vertical direction. The Cartesian coordinate system is not limiting of the invention but is used for illustration only. Alternatively, another coordinate system (such as a cylindrical coordinate system) can be used to illustrate the invention. The orientation of the Cartesian coordinate system can be different, for example, such that the z-axis has a component along the horizontal plane.

[0036] Immersion lithography has been introduced into photolithography systems to achieve improved resolution for smaller features. In an immersion lithography apparatus, a liquid layer of immersion fluid with a relatively high refractive index is inserted into the immersion space 11 between the apparatus's projection system PS (through which a patterned beam is projected onto the substrate W) and the substrate W. The immersion fluid covers at least a portion of the substrate W beneath the final element of the projection system PS. Thus, at least the portion of the substrate W undergoing exposure is immersed in the immersion fluid.

[0037] In commercial immersion lithography, the immersion liquid is water. Typically, the water is high-purity distilled water, such as ultrapure water (UPW) commonly used in semiconductor manufacturing plants. In immersion systems, UPW is often purified, and it may undergo additional processing steps before being supplied to the immersion space 11 as the immersion liquid. Besides water, other liquids with high refractive indices can also be used as the immersion liquid, such as hydrocarbons (e.g., fluorinated hydrocarbons); and / or aqueous solutions. Furthermore, the use of fluids other than liquids in immersion lithography has been envisioned.

[0038] In this specification, localized immersion will be referred to as such, in which the immersion liquid is confined in use within the immersion space 11 between the final element and the surface facing the final element. The facing surface is the surface of the substrate W, or the surface of the support platform (or substrate support WT) coplanar with the surface of the substrate W. (Note that references to the surface of the substrate W below also, alternatively, refer to the surface of the substrate support WT, unless otherwise explicitly stated, and vice versa). The fluid handling structure IH between the projection system PS and the substrate support WT is used to confine the immersion liquid within the immersion space 11. The immersion space 11, filled with the immersion liquid, is smaller in planar plane than the top surface of the substrate W, and the immersion space 11 remains substantially stationary relative to the projection system PS while the substrate W and the substrate support WT move below.

[0039] Other immersion systems have been envisioned, such as unrestricted immersion systems (so-called "fully wetted") and bath-type immersion systems. In an unrestricted immersion system, the immersion liquid covers an area greater than the surface beneath the final component. The liquid outside the immersion space 11 exists as a thin liquid film. The liquid can cover the entire surface of the substrate W, or even the substrate W and the substrate support WT coplanar with the substrate W. In a bath-type system, the substrate W is completely immersed in a bath of immersion liquid.

[0040] A fluid handling structure IH is a structure that supplies immersion liquid to, removes from, and thereby confines immersion liquid within an immersion space 11. The fluid handling structure IH includes several features as part of a fluid supply system. An arrangement disclosed in PCT patent application publication number WO99 / 49504 is an earlier fluid handling structure that includes conduits that supply or recover immersion liquid from the immersion space 11, and these conduits operate dependent on the relative movement of a platform below the projection system PS. In more recent designs, the fluid handling structure IH extends along at least a portion of the boundary of the immersion space 11 between the final element of the projection system PS and the substrate support WT or substrate W, in order to partially define the immersion space 11.

[0041] A fluid handling structure (IH) can have a range of different functions. Each function can originate from a corresponding feature that enables the fluid handling structure IH to perform that function. A fluid handling structure IH can be referred to by many different terms, each referring to a function, such as a barrier member, a sealing member, a fluid supply system, a fluid removal system, a liquid confinement structure, and so on.

[0042] An immersion liquid can be used as an immersion fluid. In this case, the fluid handling structure IH can be a liquid handling system. Referring to the foregoing description, references to features defined relative to a fluid in this paragraph can be understood to include features defined relative to a liquid.

[0043] The photolithography apparatus has a projection system PS. During exposure of the substrate W, the projection system PS projects a patterned radiation beam onto the substrate W. To reach the substrate W, the path of the radiation beam B from the projection system PS passes through an immersion liquid, which is confined between the projection system PS and the substrate W by a fluid handling structure IH. The projection system PS has a lens element in contact with the immersion liquid, which is the last element in the beam's path. This lens element in contact with the immersion liquid can be referred to as the "last lens element" or "final element." The final element is at least partially surrounded by the fluid handling structure IH. The fluid handling structure IH can confine the immersion liquid below the final element and above the facing surface.

[0044] like Figure 1 As shown, the photolithography equipment includes a controller or control system 500. The controller or control system 500 is configured to control a substrate support WT.

[0045] Figure 2 A localized liquid supply system or fluid handling system is schematically depicted. The liquid supply system includes a fluid handling structure IH (or liquid confinement structure) extending at least a portion of the boundary of the immersion space 11 between the last element of the projection system PS and the substrate support WT or substrate W. The fluid handling structure IH is substantially stationary relative to the projection system PS in the XY plane, but some relative motion may exist in the Z direction (direction of the optical axis). In the example, a seal is formed between the fluid handling structure IH and the surface of the substrate W, and can be a non-contact seal, such as a gas seal (such a system with a gas seal is disclosed in EP1,420,298) or a liquid seal.

[0046] The fluid handling structure IH at least partially confines the immersion liquid within an immersion space 11 between the final element of the projection system PS and the substrate W. The immersion space 11 is at least partially formed by the fluid handling structure IH located below and surrounding the final element of the projection system PS. The immersion liquid is introduced into the immersion space 11 below the projection system PS and within the fluid handling structure IH through one of the liquid openings 13. The immersion liquid can be removed through the other liquid opening 13. The immersion liquid can enter the immersion space 11 through at least two liquid openings 13. Which of the liquid openings 13 is used to supply the immersion liquid and, optionally, to remove the immersion liquid can depend on the direction of movement of the substrate support WT.

[0047] The immersion liquid can be confined within the immersion space 11 by a non-contact seal, such as a gas seal 16 formed during use between the bottom of the fluid processing structure IH and the surface of the substrate W. Gas in the gas seal 16 is supplied under pressure to the gap between the fluid processing structure IH and the substrate W via inlet 15. The gas is extracted via outlet 14. The overpressure at gas inlet 15, the vacuum level at outlet 14, and the geometry of the gap are arranged such that a high-speed inward gas flow is present to confine the immersion liquid. Such a system is disclosed in US2004 / 0207824, the entire contents of which are incorporated herein by reference. In this example, the fluid processing structure IH does not have a gas seal 16.

[0048] Figure 3 It is a side view sectional view depicting another liquid supply system or fluid handling system. Figure 3 The arrangements shown and described below can be applied to the above and Figure 1 The lithography apparatus shown. The liquid supply system is provided with a fluid handling structure IH (or liquid confinement structure) that extends at least a portion of the boundary of the immersion space 11 between the last element of the projection system PS and the substrate support WT or the substrate W.

[0049] The fluid handling structure IH at least partially confines the immersion liquid within an immersion space 11 between the final element of the projection system PS and the substrate W. The immersion space 11 is formed at least partially by the fluid handling structure IH located below and surrounding the final element of the projection system PS. In an example, the fluid handling structure IH includes a body member 53 and a porous member 33. The porous member 33 is plate-shaped and has a plurality of holes (i.e., openings or apertures). The porous member 33 may be a mesh plate in which a plurality of small holes 84 are formed. Such a system is disclosed in US2010 / 0045949 A1, the entire contents of which are incorporated herein by reference.

[0050] The main component 53 includes a supply port 72 for supplying immersion liquid to the immersion space 11 and a recovery port 73 for recovering immersion liquid from the immersion space 11. The supply port 72 is connected to a liquid supply device 75 via a passage 74. The liquid supply device 75 supplies immersion liquid to the supply port 72 through the corresponding passage 74. The recovery port 73 recovers immersion liquid from the immersion space 11. The recovery port 73 is connected to a liquid recovery device 80 via a passage 79. The liquid recovery device 80 recovers the immersion liquid recovered via the recovery port 73 through passage 29. A porous component 33 is disposed in the recovery port 73. The immersion space 11 is formed between the projection system PS and the fluid processing structure IH on one side and the substrate W on the other side, using the supply port 72 for liquid supply operations and the porous component 33 for liquid recovery operations.

[0051] Figure 4 An exemplary route R40 is depicted for exposing target portions C001 to C107 on substrate W. Route R40 illustrates the relative movement between substrate W and fluid processing structure IH. This relative movement can be provided by moving substrate W via substrate support WT while fluid processing structure IH remains stationary. Substrate support WT can be referred to as a scanner. The route exemplified by R40 can be referred to as a scanner exposure route.

[0052] exist Figure 4 In this process, target portions are exposed sequentially by number. Target portions depicted with dense shading (e.g., C104) are edge target portions exposed at a low speed. Target portions depicted with sparse shading (e.g., C085) are edge target portions exposed at a low speed, but faster than the target portions with dense shading. Edge target portions are exposed, but the exposure motion only covers the portion of the target portion that overlaps with the substrate W, not the entire length of the edge target portion. Route R40 has been calculated by attempting to optimize yield and includes long diagonal movements R41, R42. Diagonal movements R41, R42 are transfer movements between the exposure of a target portion at the end of a row and the exposure of a target portion at the beginning of the next row. Diagonal movement R41 occurs after the exposure of edge target portion C104 and repositions the substrate for the exposure of edge target portion C105. Diagonal movement R42 occurs after the exposure of edge target portion C003 and repositions the substrate W for the exposure of edge target portion C004.

[0053] As can be seen, this production route mainly consists of linear motion in the scanning (+ / -Y) direction or the lateral (+ / -X) direction. This measurement, together with the speed variation of the selected edge section described, can effectively reduce defects caused by immersion liquid loss (watermark) or air bubbles entrained in the immersion liquid. Other measurements and other routes can be designed, but there will always be a trade-off to be determined between the defect rate (the ratio of defects) and the output.

[0054] The moving speed along the scanner exposure path is known to be determined by the model. The model can determine the moving speed along the scanner exposure path based on the assessment of the defect occurrence risk. Therefore, the model can attempt to determine the maximum usable moving speed along the scanner exposure path for the expected defect rate.

[0055] The limitations of known models used to determine scanner exposure paths include that the models only attempt to optimize movement speed. Known models do not attempt to optimize exposure trajectory features such as exposure sequence, exposure direction, and detours within the path. Known models also do not determine complex movement controls such as acceleration control, jerk control (which is the rate of change of acceleration), and snap control (which is the rate of change of jerk intensity).

[0056] Another limitation of known techniques is determining the expected defect rate. Known techniques do not include all factors that may contribute to defects, such as the properties of the resist and the specific details of the substrate support WT and the fluid handling structure IH.

[0057] The embodiments provide an improved model for determining the scanner exposure path, the movement speed on the scanner exposure path, and / or the expected defect rate.

[0058] The model according to the embodiments can determine improvements to the scanner exposure path based on more features than known techniques. For example, the model can determine improvements based on the exposure layout, resist type / process, substrate support WT properties, and fluid handling structure IH properties. The model can iteratively determine improvements to the scanner exposure path.

[0059] The embodiments provide model-based predictive feedforward control. This model can be physical-based or heuristic / user-based. Therefore, the model can be based on a combination of physical and heuristic / user-based approaches. Heuristic / user-based inputs to the model include user-defined exposure process parameters, such as resist contact angle, exposure field layout, etc. Model inputs may also include the properties of the substrate support WT, the fluid handling structure IH, the movement and trajectory profile of the substrate stage, and any other physical parameters related to the exposure process.

[0060] The model's output is determined by analyzing the scanning exposure path (e.g., the sequence of exposures, scanning direction, movement speed, acceleration, jerkiness, and / or jerk-jerk) to identify operational data that the model has attempted to optimize for yield and / or defect rate.

[0061] This model can be used to predetermine the scanner exposure path and its properties before the exposure process begins. When used in this way, the model can be referred to as an external scanner model or an offline model. The model can also be used to determine changes to the scanner exposure path during the exposure process and the properties of the scanner exposure path. When used in this way, the model can be referred to as an on-screen scanner model or an inline model.

[0062] The model according to the embodiments is described in more detail below.

[0063] The model's input data may include physical data regarding one or more of the process, the fluid handling structure IH, the substrate support WT, and the substrate stage. Physical data regarding the process may include one or more of the following: substrate W properties, resist contact angle, leaching properties, and resist type (e.g., negative or positive development). Physical data regarding the fluid handling structure IH may include data regarding the properties of the fluid flow, the shape of the fluid handling structure IH, and the flight altitude of the fluid handling structure IH. Physical data regarding the substrate support WT may include data regarding one or more of the following: the fluid extraction system, the annular structure of the substrate support WT radially outward from the substrate W, the properties of the fluid flow in the fluid extraction system, the shape and dimensions of the fluid extraction system, and the gap between the annular structure and the substrate W. Physical data regarding the substrate stage may include data regarding the path, the maximum available accelerometer, movement constraints (e.g., maintaining the substrate W throughout the exposure process), and the movement required to set up the first exposure process.

[0064] The model's input data may also include heuristic data and / or user-based data. This can include data from user observations, such as defects that might not be easily predicted from previous use cases. Input data may also include user data on advantageous techniques already identified from previous use cases. For example, input data may include data on techniques that are particularly effective for a particular application. Input heuristic data and / or user-based data may also include user-defined parameters of the exposure process, such as resist contact angle, exposure field layout, the order of fields to be (partially or fully) exposed, forced scan direction (e.g., if a particular combination of parameters is known to be unfavorable, a more favorable combination of parameters can be predetermined), starting state, etc.

[0065] The model's input data may include any other data related to the performance of the exposure process and / or the movement of the substrate W. The model's input data can be generated within a portion of the scanning process performed by the lithography apparatus.

[0066] The model determines the expected defect rate at all exposure locations and any other relevant locations on the substrate W based on the received input. The model determines operational data. Operational data may include the order in which regions on the substrate W are exposed, the scanner exposure path, the scanning direction, and the movement of the substrate W and / or any other relevant properties of the exposure process. The model may attempt to determine operational data that maximizes the yield of the exposure process while ensuring the expected defect rate does not exceed a predetermined threshold and / or the operational data appears close to optimal.

[0067] The operational data determined by the model can be output from the model as optional or sub-optional schemes, making them executable.

[0068] This model uses an iterative process to determine operational data. It can initially determine operational data that ensures the expected defect rate meets user-defined specifications. During iteration, the model can repeatedly modify the initially determined operational data to attempt to determine new operational data that improves performance metrics while still meeting user-defined specifications for the expected defect rate. For example, a performance metric could be production volume (i.e., the time required for all exposure processes). For instance, the iterative process could attempt to determine new operational data that increases production volume while still meeting user-defined specifications for the expected defect rate. Alternatively, the iterative process could attempt to determine new operational data that reduces the expected defect rate without significantly reducing production volume.

[0069] Figure 5 A method for iteratively improving operational data, performed within a model according to an embodiment, is illustrated.

[0070] The model may include a first determining block 501, a second determining block 502, a third determining block 503, and a fourth determining block 504. The model can receive data from the first input unit 601, the second input unit 602, the third input unit 603, and the fourth input unit 604. The model can output data through the data output unit 701.

[0071] The first determining block 501 may receive an exposure configuration scheme from the first input unit 601. The exposure configuration scheme may be determined based on user requirements. The exposure configuration scheme may define the exposure area of ​​the substrate W and the exposure conditions at each exposure area. The first determining block 501 may determine initial operating data based on the exposure configuration scheme. The initial operating data may define the exposure sequence, scan direction, and movement speed / acceleration / jump / jerk. The first determining block 501 may attempt to determine the operating data to maximize performance metrics (such as yield). The first determining block 501 may provide the determined initial operating data to the second determining block 502.

[0072] The second determining block 502 can receive heuristic data / user-based data from the second input unit 602. The heuristic data / user-based data can be the aforementioned heuristic data / user-based data. The second determining block 502 can also receive physical data from the third input unit 603. The physical data can be the aforementioned physical data.

[0073] The second determining block 502 can determine the defect rate risk of the received operational data based on heuristic data / user-based data and physical data. If the determined defect rate risk exceeds a predetermined threshold (which may be a user-defined threshold), the operational data is determined to be improveable (i.e., NOK). The operational data can be sent to the fourth determining block 504 so that the operational data can be modified. If the determined defect rate risk does not exceed the predetermined threshold (which may be a user-defined threshold), the operational data is determined to be usable (i.e., OK). The operational data can be output from the model through the data output unit 701.

[0074] The fourth determining block 504 can receive operating data that has been determined by the second determining block 502 to be improvable. The fourth determining block 504 can also receive exposure path change data from the fourth input unit 604. The exposure path change data may include heuristic data and other data related to how the operating data can be modified.

[0075] Based on the received data, the fourth determining block 504 can determine conditions such as constraints on scan speed, preparation move speed, preparation area, exposure sequence, scan direction, stabilization time constraints, and any other relevant aspects of the operating data. The fourth determining block 504 can output the determined conditions and operating data to the third determining block 503.

[0076] The third determining block 503 can determine and apply changes to the operation data based on the conditions determined by the fourth determining block 504.

[0077] The third determining block 503 can output the modified operating data to the second determining block 502. The second determining block 502 can repeat the process of determining the defect rate risk using the operating data received from the third determining block 503. If the determined defect rate risk exceeds a predetermined threshold (which may be a user-defined threshold), the operating data is determined to be improveable (i.e., NOK). Alternatively or additionally, determining that the operating data is improveable can be based on the detection of defects formed in a persistent pattern on the substrate W and / or the detection of a fingerprint of the substrate W. The operating data can be sent to the fourth determining block 504 so that the operating data can be modified. If the determined defect rate risk does not exceed a predetermined threshold (which may be a user-defined threshold), the operating data is determined to be usable (i.e., OK). The operating data can be output from the model through the data output unit 701.

[0078] The process of changing the operation data by transferring it from the second determining block 502 to the fourth determining block 504, then to the third determining block 503, and then back to the second determining block 502 can be repeated in the loop, at least until the second determining block 502 determines that the determined changes to the initial operation data are available. Therefore, the model can iteratively improve the operation data with each execution of the loop. The operation data determined to be available can be output via the data output unit 701. The output operation data can be executed by the control system 500 of the substrate support WT and / or any other part of the lithography apparatus controlled to provide relative movement between the substrate W and the fluid processing structure IH during exposure.

[0079] The embodiment includes executing a model for modifying operational data using operational data that has already been determined to be available. This can determine further improved operational data that can be output by the data output unit 701.

[0080] The model in this embodiment can be used to predetermine operational data before the exposure process begins. When used in this way, the model can be referred to as an external scanner model or an offline model. The model can also be used to determine changes to the operational data during the exposure process. When used in this way, the model can be referred to as an on-scanner model or an inline model.

[0081] The following describes examples of changes to operational data that can be determined by the model according to the embodiments.

[0082] The implementation includes identifying and applying changes to operational data to reduce the expected defect rate without decreasing output. This allows for faster speeds as long as the identified defect rate risk does not exceed a predetermined threshold.

[0083] For example, a possible defect is the formation of large bubbles. Large bubbles form because the fluid processing structure IH crosses a notch in the substrate W, where a large gap (which can be approximately 500 μm) exists between the edge of the substrate W and the edge of the substrate support WT. When the substrate notch crosses this gap, large bubble formation can be avoided or reduced by controlling the acceleration or jerk of the substrate W to a constant value. This control over the acceleration or jerk of the substrate W by varying the operating data can reduce the expected defect rate without decreasing yield.

[0084] Defects may also increase due to the long linear relative motion between the substrate W and the fluid processing structure IH. For example, reference Figure 4 The route can sequentially include target portions C106, C100, C090, C079, C067, C054, C041, C029, C018, C008, and C002. This is a long linear route, and the risk of defects due to water loss is high. To reduce the defect rate risk, the model according to the embodiment can determine and apply changes to the operating data such that the sequence of target portions does not include such a long linear movement. For example, the model can determine that an alternative order for exposing the target portions is C106, C100, C099, C107, C090, C079, C091, etc. This change in the route can reduce the expected defect rate. If the modified route reduces yield, the model can determine other changes that can be made to the operating data to increase the yield of a particular type of lithography equipment. Therefore, the embodiment can determine changes to the operating data that reduce the defect rate without significantly reducing yield. The embodiment can be similarly used to determine how to increase yield without increasing the defect rate.

[0085] In a preferred embodiment, the model is used to improve operational data as a configuration scheme for the exposure process. The model can receive a configuration scheme for exposing substrate W during the exposure process. Based on the configuration scheme, the model can determine a first motion plan with a first duration that minimizes the exposure time during the exposure process. The first motion plan can include multiple movements along adjacent regions on a first portion of substrate W. The model can then determine a set of locations on substrate W at risk of defects during the exposure process based on the first motion plan. Based on the determined set of locations at risk of defects, the model can determine a second motion plan with a second duration to reduce the risk of defects during the exposure process. The second motion plan can include at least one movement along at least two spaced regions on a second portion of substrate, and the second duration can be longer than the first duration. The model can calculate the time difference between the first duration and the second duration and determine how to modify the timing of the second motion plan of the exposure process to minimize the time difference. As a result of the determined modification of the second motion plan, the exposure process according to the second motion plan can be completed in substantially the same time as the time according to the first motion plan.

[0086] The embodiments also include models for determining other changes to operational data and / or for improving other performance metrics besides defect rate and yield.

[0087] Improving the sustainability of the photolithography process is often necessary. Examples of ways to improve sustainability include reducing carbon dioxide usage and lowering power consumption.

[0088] In immersion lithography, carbon dioxide is supplied to the air knife within the fluid handling structure (IH). The use of the air knife reduces immersion-related defects. Carbon dioxide is specifically chosen because it dissolves rapidly in water. The carbon dioxide is supplied to the IH via a mass flow controller (MFC). In known technologies, carbon dioxide is continuously supplied to the air knife during both production and non-production periods of the lithography apparatus. The carbon dioxide consumption of the lithography apparatus due to the air knife alone can be approximately 10 kg of carbon dioxide per hour.

[0089] The total power consumption of a lithography device can be about 80kW, depending on how the power is generated, which can result in 40kg of carbon dioxide being released into the atmosphere per hour.

[0090] Examples include using models to determine variations in the lithography process to improve sustainability. Specifically, the model can be used to determine changes in process operating data to reduce carbon dioxide consumption and / or power consumption of the lithography equipment. For example, when the lithography equipment is in production mode, carbon dioxide may be used only in the air knife, and the use of carbon dioxide needs to meet a required defect rate. Whenever the lithography equipment is in a non-production mode, i.e., when no lithography process is being performed, the supply of carbon dioxide to the fluid processing structure IH can be stopped. The supply of carbon dioxide to the fluid processing structure IH can also be stopped whenever the lithography equipment is in a transition mode, i.e., when it changes between production and non-production modes, and vice versa. If the lithography equipment needs to supply carbon dioxide to the fluid processing structure IH when it is in a transition mode, the examples include models to determine variations in the time required to reduce the transition mode, thereby reducing total carbon dioxide consumption.

[0091] The model can receive user-defined instructions regarding the relative importance of throughput, defect rate, accuracy (i.e., overlap performance), and the sustainability of the performed process. The model can then determine operational data to improve the performed process given the user-defined instructions and specific conditions (such as those defined by exposure matching scheme, substrate W properties, etc.).

[0092] In the first example of user-defined instructions, a minimum achievable defect rate is required. The model can then attempt to determine the fastest achievable route and operating conditions that also provide the minimum achievable defect rate. This might involve slowing down the relative motion between the substrate W and the fluid processing structure IH at specific locations and supplying carbon dioxide only to the air knife.

[0093] In the second example of the user-defined instructions, the defect rate does not need to be as low as possible, and improving process sustainability is preferred. The model can determine that the gas supply to the air knife can be extremely clean dry air (XCDA) instead of carbon dioxide. The model can then attempt to determine the fastest achievable route and operating conditions that also provide the specified defect rate.

[0094] In all cases, the model determines that the air knife should be shut down to avoid unnecessary carbon dioxide use when the lithography equipment is idle or performing actions that are not critical to the defect rate (such as adjustment movements). Adjustment movements are movements performed to maintain appropriate operating temperatures when the lithography equipment is not in production. The model can also determine actions to reduce the total power consumption of the lithography equipment without significantly degrading the performance of the lithography process.

[0095] The embodiments include a model for determining the applied spacing distance (i.e., flight altitude) between the fluid processing structure IH and the substrate W. The spacing distance can be defined as the minimum distance between the fluid processing structure IH and the substrate W in a direction orthogonal to the plane in which the substrate W moves. A spacing distance is required to prevent the fluid processing structure IH and the substrate W from contacting each other.

[0096] Photolithography equipment can be configured such that the spacing can be changed by any amount at any time. Given user requirements and specific conditions, the model can appropriately determine and apply a variable spacing to maximize performance.

[0097] The performance of the photolithography process depends on the spacing between the fluid processing structure IH and the substrate W. When a relatively large spacing is used, the forces experienced by the substrate W are relatively low, reducing the likelihood of defects of any kind that could result from such forces. However, a relatively large spacing reduces the permissible relative movement speed between the fluid processing structure IH and the substrate W. If the relative movement speed is too high for a given spacing, significant water loss and / or water marks may occur. Water loss and / or water marks can lead to defects due to imaging errors and thermal effects.

[0098] To increase output without significantly increasing the defect rate, the model can determine, for example, to use a relatively large constant spacing distance and a slower relative movement speed during critical moves (such as each scan move along the scan path during an exposure process). However, during non-critical moves (such as during a preparation move to move the substrate W to a position where a new scan move can begin), a lower spacing distance and a faster relative movement speed can be used. A lower spacing distance increases the forces experienced by the substrate W. However, this may not significantly degrade performance because no critical move is performed. Therefore, output can be increased due to the faster available relative movement speed of the substrate W and the fluid handling structure IH during each preparation move. For a given spacing distance and use case, there exists a maximum relative movement speed that can be used without a significant performance degradation. The maximum relative movement speed can vary between different use cases. Implementations include determining the relationship between the maximum relative movement speed and the spacing distance for each use case. This relationship can be stored (such as encoded) in a lookup table. The lookup table can include data on available flight altitudes and can be referenced to attempt to optimize performance.

[0099] The embodiments also include a model for determining the spacing distance so that substrates W with different thicknesses can be used appropriately without significantly increasing the risk of collision.

[0100] Therefore, the operational data determined by the model according to the embodiment may include the applied interval distance. Different interval distances may be used at different times. The interval distance may be determined based on heuristic data / user-based data and / or physical data.

[0101] The embodiments also include a model for determining the usage location of the substrate W on the substrate support WT.

[0102] Figure 6 A substrate 801 mounted on a substrate support 800 is schematically shown. Substrate 801 may be the same as the previously described substrate W. Substrate support 800 may be the same as the previously described substrate support WT. Substrate support 800 includes a ring 802a and a body 802b. Ring 802a may have a circular shape or any other suitable shape (such as a square). Substrate 801 may have a conventional circular shape or any other suitable shape.

[0103] When substrate 801 is mounted on substrate support 800, substrate 801 can be supported by body 802b and surrounded by ring 802a in the plane of substrate 801. Annular gaps 803a and 803b may exist between substrate 801 and ring 802a. Gap 803a and 803b are needed to avoid direct physical contact between substrate 801 and ring 802a. Any contact between substrate 801 and ring 802a may increase the defect rate by damaging substrate 801 and / or deforming substrate 801.

[0104] During the relative movement of the fluid processing structure IH between the substrate 801 and / or the substrate support 800, as the fluid processing structure IH crosses gaps 803a and 803b, interactions may occur between the fluid processing structure IH and the gaps 803a and 803b. For example, fluid flow may occur through the gaps 803a and 803b, which could lead to performance degradation. Smaller gaps 803a and 803b may be desirable to reduce fluid flow through them.

[0105] Traditionally, substrate 801 is always positioned as close as possible to the center of ring 802a. Assuming that the circular substrate 801 and ring 802a have no roundness error, the dimensions of gaps 803a and 803b are constant around the circumference of the centrally positioned substrate 801. Therefore, at radially opposite positions 803a and 803b, gaps 803a and 803b are identical.

[0106] It has been recognized that the central positioning of substrate 801 within ring 802a is not necessarily the preferred position of substrate 801 within ring 802a. The design of products or devices manufactured on substrate 801 may result in a varying tolerable defect rate across different regions of substrate 801. Regions with lower tolerable defect rates on substrate 801 may be asymmetrically located on substrate 801. That is, for example, a feature manufactured near gap 803a may have a lower defect rate than a feature manufactured near gap 803b.

[0107] The embodiment includes a model for determining the eccentric position of substrate 801 within ring 802a. The eccentric position of substrate 801 precisely causes variations in gaps 803a, 803b around the circumference of substrate 801. At locations where gap 803a is smaller, fluid flow through gap 803a decreases, which can reduce the defect rate. At locations where gap 803b is larger, fluid flow through gap 803b increases, which may increase the defect rate.

[0108] For many different types of applications (i.e., use cases), performance at off-center locations of substrate W can be calibrated and stored, for example, encoded in a lookup table. The lookup table can include data on the available locations of substrate 801 on substrate support 800 and can be referenced when attempting to optimize performance.

[0109] For example, for specific types of applications, the model can be determined using a lookup table, and overall performance can be improved by eccentrically positioning the substrate 801 such that gap 803a is smaller than gap 803b. This positioning of substrate 801 can improve overall performance. For example, although the defect rate of features fabricated near gap 803b may increase, this would be acceptable if the increased defect rate in that region is tolerable.

[0110] The embodiments also include a model for determining the eccentric position of substrate 801 within ring 802a to improve fluid flow properties. When substrate 801 is centrally positioned within ring 802a, fluid flow through gaps 803a, 803b may be non-uniform around the circumference of substrate 801. This non-uniform fluid flow may be caused by the implementation of the fluid extraction system and / or other conditions. The model according to the embodiments can determine the eccentric position of substrate 801, resulting in more uniform fluid flow through gaps 803a, 803b.

[0111] Therefore, the eccentric position of substrate 801 within ring 802a can be appropriately determined according to the model of the embodiment to maximize performance given user requirements and specific conditions.

[0112] Therefore, the operational data determined by the model according to the embodiment may include the position of the substrate 801 on the substrate supports 802a, 802b. The position of the substrate 801 on the substrate support 800 may be determined based on heuristic data / user-based data and / or physical data.

[0113] To improve overall performance by utilizing the eccentric positioning of substrate 801 within ring 802a, the effective dimensions of gaps 803a, 803b at all locations surrounding substrate 801 must be known when substrate 801 is mounted on substrate support 800. Uncertainty regarding the determined effective dimensions of gaps 803a, 803b may reduce the accuracy of operating parameters used to improve overall performance.

[0114] The actual dimensions and variations of gaps 803a and 803b can be determined by capturing images of gaps 803a and 803b using a camera. However, there is no existing camera for this purpose in the lithography apparatus, and introducing a new camera to measure the position of substrate 801 on substrate support 800 would increase costs. Integrating a new camera within the lithography apparatus is also complex and could compromise the performance of some other processes.

[0115] The embodiments include alternatively using a model to determine the effective dimensions of gaps 803a, 803b of the substrate 801 on the substrate support 800. Advantageously, new hardware can be used to determine the effective dimensions of gaps 803a, 803b. The embodiments also include controlling the process based on the determined effective dimensions of gaps 803a, 803b. This can improve the performed process, thereby increasing yield and / or throughput.

[0116] The embodiment models the effective dimensions of the gaps 803a and 803b of the substrate 801 around the substrate support 800 based on the properties of the substrate 801, the properties of the substrate support 800, and the performance of the substrate 801 and the substrate support 800.

[0117] The properties of substrate 801 may be measurable and / or known. The properties of substrate 801 used in the model may include the thickness, shape, warpage, and diameter of substrate 801. The properties of substrate 801 may be determined, at least in part, based on measurements taken when substrate 801 is mounted on substrate support 800. The properties of substrate 801 may also include data known prior to substrate 801 being mounted on substrate support 800.

[0118] The properties of the substrate support 800 can be measurable and / or known. The properties of the substrate support 800 used by the model can include the shape of the substrate support 800, particularly the shape of the ring 802a. The model can also use measurements or estimates of the static and dynamic load properties of the substrate support 800. Static load properties are physical properties specific to each substrate support 800. Dynamic load properties are the physical responses of the substrate 801 and the substrate support 800 when the substrate 801 is loaded onto the substrate support 800. The properties of the substrate support 800 can be determined, at least in part, based on measurements taken when the substrate 801 is loaded onto the substrate support 800. The properties of the substrate support 800 can also include data known prior to the substrate 801 being loaded onto the substrate support 800.

[0119] When substrate 801 is mounted on substrate support 800, the performance of substrate 801 and substrate support 800 can be measured. For example, performance measurements used by the model can include measurements of the properties of fluid flow through gaps 803a and 803b. For example, changes in fluid flow velocity through gaps 803a and 803b can be measured at different locations within gaps 803a and 803b in response to a predetermined fluid flow. The changes in fluid flow velocity can then be used as performance measurement results.

[0120] The properties of the fluid flow through gaps 803a and 803b depend on the properties of the substrate 801, the substrate support 800, and the properties of the effective gaps 803a and 803b. Therefore, given the determined properties of the substrate 801 and the substrate support 800, the model can determine the effective gaps 803a and 803b by determining the gaps 803a and 803b that provide the measured fluid flow properties.

[0121] Therefore, the embodiments provide a model for determining the dimensions and variations of effective gaps 803a, 803b between substrate 801 and ring 802a. Determining the effective gaps 803a, 803b is determining the position of substrate 801 on substrate support 800. The embodiments also include determining operating data and / or corrections to the operating data over time based on the determined effective gaps 803a, 803b to improve performance. The embodiments can determine changes to the effective gaps 803a, 803b made over time to improve performance. The required changes can be determined based on operating data and / or data about the product being manufactured. Further measurements of fluid flow rate variations can be used to determine the actual changes made to the effective gaps 803a, 803b.

[0122] The embodiments include using a model to determine the effective gaps 803a, 803b of each individual substrate 801 when mounted on a substrate support 800, and determining operating data and / or corrections to the operating data over time based on each determined effective gap 803a, 803b.

[0123] The embodiments also include models for dynamically determining exposure strategies to attempt to optimize performance under specific conditions, given acceptable production risks. This includes dynamically determining operating conditions such as scanner exposure path, movement speed along the scanner exposure path, focus, and other factors that affect productivity, defect rate, and sustainability.

[0124] Figure 7 The planar view schematically illustrates the movement of the substrate locator 900 relative to the exposure field of view (FOV) during the single-layer scanning process in product manufacturing. The substrate locator 900 is a movable structure supporting the substrate 905. The substrate locator 900 can be configured to hold the previously described substrate support WT of the substrate 905 as a separate component or integrated with the substrate support WT. The substrate 905 can be the same as the previously described substrate W.

[0125] The substrate locator 900 also includes regions 901, 902, 903, and 904 that can be used for calibration and / or measurement purposes. For example, in order to perform alignment measurements of a pattern forming apparatus (i.e., a mask), the scanning process can move the substrate locator 900 such that the exposure FOV is above one of regions 901, 902, 903, and 904.

[0126] The path of the substrate positioner 900 relative to the exposure FOV includes an initial path 906 of the scanning process. On the initial path 906, the substrate positioner 900 moves relative to the exposure FOV such that the exposure FOV is above regions 901, 902, and a portion of the substrate 905. The path of the substrate positioner 900 relative to the exposure FOV also includes a final path 907 of the scanning process. On the final path 907, the substrate positioner 900 moves relative to the exposure FOV such that the substrate 905 moves away from the exposure FOV. Figure 7 The path of the substrate positioner 900 relative to the exposure FOV during the main part of the scanning process, which occurs between the initial path 906 and the final path 907, is not shown.

[0127] like Figure 8 As shown, different regions on the surfaces of substrate locator 900 and substrate 905 can be identified. Figure 8Six regions, labeled Z1, Z2, Z3, Z4, Z5, and Z6, are shown. It should be understood that any number of regions can exist, and each region can cover the substrate positioner 900 and the substrate 905, and... Figure 8 The different regions are shown. The combined area of ​​all regions can cover the entire surface of substrate locator 900 and substrate 905. Each region can partially overlap with one or more other regions.

[0128] Figure 9 The diagram illustrates the actions that can be performed when the field of view (FOV) is exposed above each area. It should be noted that... Figure 9 It demonstrates performing different actions in different zones over a period of time, and Figure 9 The time periods in the figure are not shown to scale.

[0129] The top row 1001 shows the different actions, and the bottom row 1002 shows the area of ​​the exposure FOV above the substrate locator 900 and substrate 905 when each action is performed.

[0130] Action 1003 can be an exchange operation, which requires moving the substrate positioner 900 so that the exposure FOV is above the portions of Z1 and Z2.

[0131] Actions 1004, 1005, and 1006 can be measurements and / or calibrations (such as mask alignment measurements), during which the exposure FOV is only above Z2 of the substrate locator 900.

[0132] Action 1007 can be moved to the first exposure operation, which requires moving the substrate locator 900 so that the exposure FOV is above the portions of Z2 and Z3.

[0133] Action 1008 may include the main part of the scanning process and requires moving the substrate positioner 900 so that the exposure FOV is above the portions of Z3, Z4 and Z5.

[0134] Action 1009 can be the end sequence of the scanning process and requires moving the substrate positioner 900 so that the exposure FOV is above the portions of Z4 and Z6.

[0135] The embodiments determine the risk level associated with the process performed in each zone during the scanning process. Each risk level may define the risk associated with the extent to which errors and / or manufacturing defects may occur.

[0136] Table 1 shows the risk matrix, which includes all risk levels associated with the procedures performed in each zone during the scanning process. Table 1

[0137] Each column in Table 1 represents a different performance metric. Performance metrics can include focusing, overlap, sensor stability, defect rate, machine material damage control (MMDC), and many other performance metrics. The rows in Table 1 correspond to different zones, namely Z1 to Z6.

[0138] Each risk level is an entry. , where k=1 to K, n=1 to N, where K is the total number of regions, and N is the total number of performance metrics.

[0139] Each risk level Based on the operating conditions, these operating conditions can be alternatively referred to as the operating data upon which the operating conditions depend. Therefore, It is based on the following risk level: v = velocity t = time a = acceleration j = urgency

[0140] Each risk level It can be limited by additional and / or alternative operating conditions such as speed, time, acceleration, and jerk.

[0141] The risk levels in Table 1 provide the expected risk for a performance metric at a specific location under given operating conditions. The total risk level P(layer) of the layers manufactured during the scanning process can be calculated as:

[0142] The total risk level P (layer) should be less than or equal to the predetermined total risk level, i.e. The predetermined total risk level is a total risk level that has been defined as acceptable to the user.

[0143] For each performance metric in each zone, the acceptable risk for the user can be determined based on the nature of the specific product being manufactured and the user's preferences (i.e., user preference data). For example, given the nature of the specific product being manufactured, focusing accuracy might be of low importance in Z2, but highly important in Z4. Therefore, the acceptable risk level for focusing might be higher in Z2 and lower in Z4. Operating conditions (e.g., speed, time, acceleration, and jerk) can be determined differently for Z2 and Z4, while still being determined to meet the acceptable levels in Z2 and Z4. Then, the risk of focusing error occurring in Z2 might be relatively high, while the risk of focusing error occurring in Z4 might be relatively low. The acceptable risk level can also depend on user preferences. For example, a user might prefer high productivity with an increased defect rate, or alternatively, lower productivity with a reduced defect rate. The acceptable risk level can be adjusted accordingly based on this user preference.

[0144] Given the nature of the specific product being manufactured and the user's preferences, the model based on the embodiment can determine the acceptable predetermined total risk level and performance metric for each zone. Default values ​​can be used for any risk level that cannot be determined from the nature of the specific product being manufactured and / or specific user preferences.

[0145] The model can then attempt to optimize all operating conditions by adjusting all operating conditions across all zones to determine an exposure strategy that attempts to optimize performance while maintaining all defined acceptable risk levels for each performance metric in each zone. For example, the exposure strategy according to the embodiment may provide higher total yield, lower total defect rate, and / or improved sustainability compared to an exposure strategy determined according to known techniques.

[0146] This embodiment may differ from previous embodiments in that the model may determine the exposure strategy without using an iterative process. The exposure strategy can be determined directly based on information / data regarding acceptable risk levels and any other required data.

[0147] The embodiments also include the use of models to mitigate bubble formation and / or water loss, as well as defects caused by bubble formation and / or water loss. Alternatively or additionally, the model may be used to determine the total time required for the process to reduce the defect rate caused by a given bubble formation and / or water loss.

[0148] In known models used to mitigate the generation of bubbles and / or water loss and defects caused by bubbles and / or water loss, fields on the substrate W that may result in defects due to bubble formation and water loss are predicted. A predicted field is considered large if its area is greater than a threshold level, and small if its area is less than the threshold level (which may be the same). Larger predicted fields are associated with an increased risk of defect occurrence. To reduce the predicted degree of defect occurrence, the relative movement speed between the substrate W and the fluid processing structure IH can be reduced in each larger predicted field. Smaller predicted fields are associated with a lower risk of defect occurrence, and therefore the relative movement speed between the substrate W and the fluid processing structure IH can be reduced to a smaller extent.

[0149] The limitation of the above model is that the magnitude of the predicted field on the substrate W that may lead to defects is not necessarily related to the actual risk level of defect occurrence. Specifically, the model may determine that a larger field carries a risk of water loss and bubble formation, but the actual risk level of that larger field may be low. In this case, slowing down the relative movement speed of the substrate W and the fluid processing structure IH in response to determining that the larger field carries a risk may unnecessarily reduce the speed of the performed process. Similarly, the model may determine that a smaller field carries a lower risk of water loss and bubble formation, but the actual risk level of that smaller field may be high. In this case, even though the determined field is small, it is necessary to slow down the relative movement speed of the substrate W and the fluid processing structure IH to prevent an increase in the defect rate.

[0150] This embodiment improves the above model by identifying the risks associated with predicted fields that may be defective due to bubble formation and / or water loss.

[0151] Figure 10 A portion of the fluid processing structure 1101 and a portion of the gap 1102 between the substrate W and the substrate support WT are schematically shown in a plan view. The fluid processing structure 1101 may be the same as the previously described fluid processing structure IH. The gap 1102 may correspond to... Figure 6 The gaps 803a and 803b are in the middle, and the overall shape can be annular.

[0152] As referenced above Figure 6 As described, when the substrate W is mounted on the substrate support WT, a ring 802a of the substrate support WT surrounds the substrate W in the plane of the substrate W. Annular gaps 803a and 803b exist between the substrate W and the ring 802a (i.e., the surrounding portion of the substrate support WT). These gaps 803a and 803b are necessary to avoid direct physical contact between the substrate W and the ring 802a. Figure 10In this design, gap 1102 is approximately linear. The actual gap 1102 will have a slight curvature that decreases with increasing radius of substrate W. The angle relative to a portion of gap 1102 can be defined as the angle relative to the tangent of the curvature at that portion of gap 1102.

[0153] When the fluid processing structure 1101 traverses the gap 1102 with relative movement between the fluid processing structure 1101 and the substrate support WT, an interaction may occur between the fluid processing structure 1101 and the gap 1102. For example, fluid flow may occur through the gap 1102, and this could be a major cause of water loss and bubble formation. An angle exists between the edge 1104 of the fluid processing structure 1101 and the gap 1102. This is also the angle between the edge 1104 of the fluid processing structure 1101 and the direction of movement 1103 of the fluid processing structure 1101 relative to the substrate support WT. .angle and It depends on the path of the substrate W / substrate support WT during the exposure process and the orientation of the substrate W / substrate support WT along the path.

[0154] It has been recognized that the amount of water loss and / or bubble generation that occurs when the fluid handling structure 1101 crosses the gap 1102 depends on the angle. and . When the angle When the angle is smaller, the fluid extraction orifice in the fluid processing structure 1101 is more aligned with the gap 1102 as it passes over it. This reduces the stability of the meniscus and increases the risk of defects caused by water loss and bubble formation on the substrate W. The risk of defects can vary with the angle. Increase and decrease, and when the angle For approximately 45 o It reaches its minimum value at that time. Greater than approximately 45 o At that time, the risk of defects can remain essentially unchanged.

[0155] The duration of crossing gap 1102 depends on the angle. For a given relative moving speed between the substrate W and the fluid processing structure IH, the risk of defects can be reduced as the duration of crossing the gap 1102 decreases. Therefore, the risk of defects caused by water loss and bubble formation on the substrate W also depends on the angle. .

[0156] The risk of defects caused by water loss and bubble formation on the substrate W also depends on the dimensions of the portion of the fluid handling structure 1101 that extends beyond the gap 1102. The dimensions of the gap 1102 include its width and curvature. The width of the portion of the fluid handling structure 1101 that extends beyond the gap 1102 can be determined by specifying where the substrate W is positioned on the substrate support WT. However, the curvature of the gap 1102 is a fixed operating parameter defined by the dimensions of the surrounding portions of the substrate W and the substrate support WT.

[0157] By according to angle and To determine the risk of defects, the following can be determined more precisely: whether it is necessary to slow down the relative movement speed of the substrate W and the fluid processing structure IH, including the number of decelerations required for each defect, and / or the degree of deceleration required for each deceleration.

[0158] This embodiment provides a path for attempting to optimize the substrate W / substrate support WT, and the angles along the path. and The model determines the angle along the route during crossing gap 1102 at each angle. and The associated defect risk is then identified. The model can then attempt to determine an improved route and / or the orientation of the substrate W / substrate support WT along the improved route to reduce the risk of defects. The improved route can reduce water loss and bubble-related defects for a given yield, or increase yield for a given defect rate. The model can iteratively determine improvements to the route.

[0159] The model in this embodiment can be an independent model implemented in a computer system for controlling the operation in a lithography device.

[0160] Alternatively, the model in this embodiment can be implemented using the model described above for predicting the fields where defects are expected to occur on the substrate W.

[0161] Alternatively, the model in this embodiment can be implemented together with the model in the above embodiments to iteratively improve the determination of the scanner exposure path, the moving speed / acceleration on the scanner exposure path, and / or the determination of operational data for reducing the defect rate. Specifically, the determined changes to the operational data include changing the angle. and / or angle .

[0162] The embodiments also include determining the nature of the exposure process to reduce the degree of defects caused by edge water loss. In particular, the scanner exposure path and / or the movement speed on the scanner exposure path can be determined in a manner that attempts to minimize the degree of edge water loss.

[0163] As previously described, in an immersion lithography apparatus, there exists an immersion space 11 filled with an immersion liquid (typically water). The immersion space 11 remains substantially stationary relative to the projection system PS, while the substrate W and substrate support WT move beneath it. A fluid processing structure IH both supplies the immersion liquid to and removes the immersion liquid from the immersion space 11. Thus, the fluid processing structure IH essentially confines the immersion liquid to the immersion space 11, where the immersion liquid has a meniscus between the fluid processing structure IH and the substrate W.

[0164] Edge water loss is an effect that can lead to the loss of immersion liquid in the immersion space 11. Edge water loss can occur at the edges of the substrate W. For example, thin film traction can cause edge water loss. The movement of the substrate W relative to the fluid processing structure IH has a drag effect on the meniscus of the immersion liquid. The resistance experienced during relative motion, particularly at the trailing edge (i.e., the retreating edge) of the fluid processing structure IH, can cause droplets of immersion liquid on the surface of the substrate W. Such droplets (typically water droplets) can reduce yield. In particular, droplets can cause watermarks when they expand. Furthermore, when there is a collision between the leading edge (i.e., the advancing edge) of the fluid processing structure IH and the droplet, the droplet can cause large bubble formation and subsequent imaging defects.

[0165] As referenced above Figure 6 and 10 As described, when the substrate W is mounted on the substrate support WT, a ring 802a of the substrate support WT surrounds the substrate W in the plane of the substrate W. Annular gaps 803a, 803b, and 1102 exist between the substrate W and the ring 802a (i.e., the surrounding portion of the substrate support WT). These gaps 803a, 803b, and 1102 are necessary to avoid direct physical contact between the substrate W and the ring 802a. The location where the fluid handling structure IH crosses these gaps 803a, 803b, and 1102 may be associated with an increased risk of edge water loss.

[0166] A known technique for reducing edge water loss effects is to reduce the travel speed on one or more sections of the scanner's exposure path. This deceleration can be achieved through manual or automatic control. Automatic control can use layout information to predict the exposure path, determine potential edge water loss along the path, calculate the alignment of the trailing edge of the fluid handling structure IH during crossing gaps 803a, 803b, and 1102, determine a slower travel speed based on the alignment, and reduce the actual travel speed to the determined slower speed at crossing gaps 803a, 803b, and 1102.

[0167] It has been found that, in some cases, known techniques for reducing the movement speed on one or more portions of the scanner exposure path can actually increase the edge water loss effect. Therefore, the overall defect rate and / or extent caused by edge water loss may increase. The increase in the edge water loss effect may be caused by changes in the movement speed and / or trajectory / path of the substrate support WT, and / or the exposure path, thereby reducing control over the immersion liquid in the immersion space 11. The altered movement speed may also increase the edge water loss effect due to changes in the resulting exposure path, the length of the exposure path, the position crossing gaps 803a, 803b, 1102, and / or the direction of movement after crossing gaps 803a, 803b, 1102.

[0168] It has been found that the scanner exposure path (also referred to as the exposure path in this paper) may have a greater impact on the occurrence of edge water loss than the movement speed. Therefore, the effect of edge water loss can be reduced by improving the determination of all properties of the exposure process, including the exposure path.

[0169] The embodiments attempt to optimize the exposure path determination results in order to reduce the edge water loss effect. The exposure path determination results according to the embodiments are explained below.

[0170] In the embodiments, an optimal scenario exposure process can be determined for a specific product. The optimal scenario exposure process provides a preferred edge water loss performance level where the defect rate / degree due to edge water loss is acceptable given user specifications. During the optimal scenario exposure process, the edge water loss performance level is determined to be good and preferably close to optimal. For the optimal scenario exposure process, contact linear velocity profiles across gaps 803a, 803b, and 1102 can be determined for each edge water loss movement at the trailing edge of the fluid handling structure IH. The contact linear velocity profiles provide movement speeds across gaps 803a, 803b, and 1102 that are expected to minimize the occurrence of edge water loss effects.

[0171] Contact linear velocity profiles can be used to attempt to optimize the determination of the properties of exposure processes that differ from optimal scenarios. Given user-imposed constraints and other requirements, each exposure process can be determined to match the contact linear velocity as closely as possible to the optimal scenario.

[0172] The following equation can be used to try optimizing the exposure path: in: N = Total number of exposure fields F = Exposure Field k = Edge water loss movement C = Contact Linear Velocity Curve J = a function that is minimized in an attempt to determine the optimal properties of the exposure process.

[0173] The embodiments include, for each edge water loss movement (k), the optimal scenario (C) opt ) and new circumstances (C new The function J is minimized on the difference between the contact velocity curves (C) of the exposure field F. Minimization attempts to determine the optimal properties of the exposure field F. For example, the input parameters for each exposure field F may include preparation speed, scan speed, and other properties. The minimization process can determine changes to the input parameters in order to attempt to determine the properties of each exposure field F, thereby minimizing the occurrence of edge water loss.

[0174] Each contact linear velocity profile can depend on the exposure field that crosses specific gaps 803a, 803b, and 1102. and the exposure fields before and after crossing gaps 803a, 803b, and 1102, respectively. and This is given in the following equation:

[0175] An embodiment provides a method for determining the nature of an exposure process. The method includes obtaining a first set of contact linear velocity profiles for a first exposure process that provide preferred edge water loss performance. Each contact linear velocity profile in the first set defines the travel speed at which the trailing edge of the fluid processing structure IH, or only the fluid processing structure IH, can cross the gap between the substrate W and the substrate support WT, provided that edge water loss performance is achieved.

[0176] The embodiment includes determining a second set of contact velocity profiles for a second exposure process that differs from the first exposure process. Each contact velocity profile in the second set defines the movement speed of the fluid processing structure IH or the trailing edge of the fluid processing structure IH across the gaps 803a, 803b, 1102 between the substrate W and the substrate support WT.

[0177] The embodiments then determine the nature of the second exposure process in order to minimize the total difference between the first set of contact velocity curves and the second set of contact velocity curves.

[0178] The embodiments also include using models to determine the nature of the exposure process in order to reduce the degree of defects caused by edge water loss.

[0179] Therefore, the embodiments allow for improved determination of the exposure process (in particular the scanner exposure path and the speed of movement on the scanner exposure path) to reduce the degree of defects caused by edge water loss.

[0180] The embodiments include many modifications and variations of the above-described techniques.

[0181] For example, embodiments have been described with reference to a model. Embodiments include using tools other than the model to perform the described processes for improving operational data. The model according to the embodiments can be executed by a computer system. The computer system can be the same as or separate from the controller or control system 500 of the lithography equipment.

[0182] The methods of the embodiments can be encoded in a computer program that includes instructions for executing the embodiments, for example, autonomously or under the instruction of the lithography apparatus. The computer program can be provided as an upgrade (e.g., a software upgrade) to existing lithography equipment. The computer program can be incorporated into the lithography apparatus during its manufacture.

[0183] In an embodiment, the second determining block 502 can determine the defect rate risk of the received operational data based on heuristic data / user-based data and physical data. The embodiment also includes a second determining block 502 for improving other performance metrics, such as reducing dynamic interactions (e.g., dynamic interactions between the substrate support WT and the fluid handling structure IH), and improving imaging / focusing.

[0184] The embodiments may provide a lithography apparatus. This lithography apparatus may have any / all other features or components of a lithography apparatus as described above. For example, the lithography apparatus may optionally include at least one or more of a source SO, an irradiation system IL, a projection system PS, a substrate support WT, etc.

[0185] Specifically, the lithography apparatus may include a projection system PS configured to project a radiation beam B toward a region of the surface of a substrate W. The lithography apparatus may also include a substrate support WT as described in any of the above embodiments and variations.

[0186] While this article specifically mentions the use of photolithography equipment in IC manufacturing, it should be understood that the photolithography equipment described herein can have other applications. Possible other applications include manufacturing integrated optical systems, guiding and probing modes for magnetic domain memory, flat panel displays, liquid crystal displays (LCDs), thin-film magnetic heads, and so on.

[0187] Where circumstances permit, embodiments of the invention may be implemented using hardware, firmware, software, or any combination thereof. Embodiments of the invention may also be implemented by instructions stored on a machine-readable medium, which may be read and executed by one or more processors. A machine-readable medium may include any means for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include read-only memory (ROM); random access memory (RAM); magnetic storage media; optical storage media; flash memory devices; electrical, optical, acoustic, or other forms of propagation signals (e.g., carrier waves, infrared signals, digital signals, etc.), and so on. Furthermore, firmware, software, routines, and instructions may be described in this invention as performing certain actions. However, it should be understood that such descriptions are merely for convenience, and these actions are in fact produced by a computing device, processor, controller, or other means of executing firmware, software, routines, instructions, etc., and performing such operations enables actuators or other devices to interact with the physical world.

[0188] Although embodiments of the invention may be specifically mentioned in the context of lithography equipment herein, embodiments of the invention may be used in other equipment.

[0189] Embodiments of the invention are further described in the following numbered entries: 1. A computer system configured to perform a method of determining operational data of a control system for a lithography apparatus, the method comprising: determining initial operational data for performing an exposure process on a substrate; repeatedly changing the initial operational data and determining one or more performance metrics of the changed operational data to determine changes to the initial operational data for improving the one or more performance metrics; and using the operational data with the applied changes to improve one or more of the performance metrics; wherein: the operational data includes a path of the substrate for performing the exposure process and movement of the substrate along the path; the one or more performance metrics include the total time required for the exposure process, the defect rate of the exposure process, and / or the sustainability of the exposure process; and the applied changes to the operational data include changes to the path and / or changes to the acceleration of a portion of the substrate along the path. 2. The computer system according to claim 1 further includes receiving data related to the exposure process; and determining initial operating data based on the received data. 3. The computer system according to clause 2, wherein the received data related to the exposure process includes physical data and heuristic / user-based data. 4. The computer system according to clause 3, wherein the physical data includes: physical data relating to one or more of the process executed for the exposure process, the fluid handling structure, the substrate support, and the substrate stage; wherein: the physical data relating to the process executed includes one or more of the substrate properties, resist contact angle, leaching properties, and resist type; the physical data relating to the fluid handling structure includes: data relating to one or more of the properties of the fluid flow, the shape of the fluid handling structure, and the available flight altitude of the fluid handling structure; the physical data relating to the substrate support includes: data relating to one or more of the fluid extraction system, the ring structure of the substrate support radially outward from the substrate, the properties of the fluid flow in the fluid extraction system, the shape and size of the fluid extraction system, the permissible clearance size between the ring structure and the substrate, and the available positions of the substrate on the substrate support; and the physical data relating to the substrate stage includes: data relating to one or more of the path required for setting the first exposure process, the maximum available accelerometer, movement constraints, and movement. 5. The computer system according to clause 3 or 4, wherein the heuristic data / user-based data includes user observation data from previous use cases and user-defined parameters of the exposure process. 6. The computer system according to any one of the preceding clauses, wherein the method is performed by the model. 7. The computer system according to item 6, wherein the model iteratively changes the operating data in order to determine an improvement in one or more performance metrics of the operating data. 8. The computer system according to any one of the preceding clauses, wherein the change applied to the operational data includes reducing the length of one or more linear movements along the route. 9. The computer system according to any one of the preceding clauses, wherein the change applied to the operating data includes one or more of the following: using a different gas in the gas knife of the lithography apparatus; reducing the power consumption of the lithography apparatus; changing the flight altitude of the fluid processing structure; changing the determination of the position for positioning the substrate on the substrate support; changing the angle of the gap between the edge of the fluid processing structure and the surrounding portion of the substrate and the substrate support; and changing the orientation of the fluid processing structure relative to the direction of movement of the fluid processing structure. 10. The computer system according to any one of the preceding clauses, wherein the change applied to the operating data comprises: arranging the acceleration or rate of change of acceleration or the rate of change of the rate of change of acceleration to be substantially constant as the fluid processing structure passes over the notch of the substrate. 11. The computer system according to any one of the preceding clauses, wherein the method determines the operational data before starting the exposure process that will use the operational data. 12. The computer system according to any one of the preceding clauses, wherein the method determines changes to the operating data during the execution of the exposure process based on the operating data. 13. The computer system according to any one of the preceding clauses, wherein the lithography apparatus is an immersion lithography apparatus. 14. A method for determining operating data for controlling a photolithography apparatus, the method comprising: determining initial operating data for performing an exposure process on a substrate; repeatedly changing the initial operating data and determining one or more performance metrics of the changed operating data to determine changes to the initial operating data for improving the one or more performance metrics; and using the operating data having the applied changes to improve the one or more performance metrics; wherein: the operating data includes a path of a substrate for performing the exposure process and movement of the substrate along the path; the one or more performance metrics include: the total time required for the exposure process, the defect rate of the exposure process, and / or the sustainability of the exposure process; and the applied changes to the operating data include changes to the path and / or changes to the acceleration of the substrate along a portion of the path. 15. The method according to clause 14 further includes receiving data related to the exposure process; and determining the initial operating data based on the received data. 16. The method according to clause 15, wherein the received data related to the exposure process includes physical data and heuristic / user-based data. 17. The method according to clause 16, wherein the physical data includes: physical data regarding one or more of the processes performed for the exposure process, the fluid handling structure, the substrate support, and the substrate stage; wherein: the physical data regarding the processes performed includes one or more of the substrate properties, resist contact angle, leaching properties, and resist type; the physical data regarding the fluid handling structure includes data regarding one or more of the properties of the fluid flow, the shape of the fluid handling structure, and the available flight altitude of the fluid handling structure; the physical data regarding the substrate support includes data regarding one or more of the fluid extraction system, the ring structure of the substrate support radially outward from the substrate, the properties of the fluid flow in the fluid extraction system, the shape and size of the fluid extraction system, the permissible clearance size between the ring structure and the substrate, and the available positions of the substrate on the substrate support; and the physical data regarding the substrate stage includes data regarding one or more of the paths required for setting the first exposure process, the maximum available accelerometer, movement constraints, and movement. 18. The method according to clause 15 or 16, wherein the heuristic data / user-based data includes data from user observations in previous use cases and user-defined parameters of the exposure process. 19. The method according to any one of clauses 14 to 18, wherein the method is performed by a model. 20. The method according to clause 19, wherein the model iteratively changes the operational data to determine an improvement in one or more performance metrics of the operational data. 21. The method according to any one of clauses 14 to 20, wherein the modification applied to the operational data includes reducing the length of one or more linear movements along the route. 22. The method according to any one of clauses 14 to 21, wherein the changes applied to the operating data include one or more of the following: using a different gas in the gas knife of the lithography apparatus; reducing the power consumption of the lithography apparatus; changing the flight altitude of the fluid processing structure; changing the determination of the position for positioning the substrate on the substrate support; changing the angle of the gap between the edge of the fluid processing structure and the surrounding portion of the substrate and the substrate support; and changing the orientation of the fluid processing structure relative to the direction of movement of the fluid processing structure. 23. The method according to any one of clauses 14 to 22, wherein the change applied to the operating data comprises: arranging the acceleration or rate of change of acceleration or the rate of change of the rate of change of acceleration to be substantially constant as the fluid processing structure passes over the notch of the substrate. 24. The method according to any one of clauses 14 to 23, wherein the method determines the operating data before starting the exposure process that will use the operating data. 25. The method according to any one of clauses 14 to 24, wherein the method determines changes to the operating data during the performance of the exposure process based on the operating data. 26. The method according to any one of clauses 14 to 25, wherein the lithography apparatus is an immersion lithography apparatus. 27. A method for improving operational data, the operational data being a configuration for an exposure process, the method comprising: providing a configuration for exposing a substrate during the exposure process; based on the configuration, determining a first motion plan having a first duration having a minimum exposure time during the exposure process, the first motion plan including multiple movements along adjacent regions on a first portion of the substrate; determining, according to the first motion plan, a set of locations on the substrate at risk of defects during the exposure process; based on the set of locations, determining a second motion plan having a second duration to reduce the risk of defects during the exposure process, the second motion plan including at least one movement along at least two spaced regions on a second portion of the substrate, and the second duration being longer than the first duration; calculating a time difference between the first duration and the second duration; and based on the time difference, modifying the timing of the second motion plan of the exposure process to minimize the time difference, such that the exposure process according to the second motion plan and the exposure process according to the first motion plan are completed substantially simultaneously. 28. A method of manufacturing a device using an immersion lithography apparatus, the method comprising performing an exposure process based on operating data determined according to any one of items 14 to 27. 29. A computer program including computer-interpretable code, which, when executed by a control system of an immersion lithography apparatus, causes the immersion lithography apparatus to perform an exposure process based on operating data determined as in any one of items 14 to 27. 30. An immersion lithography apparatus comprising: a liquid confinement structure; a positioner; a projection system for projecting a radiation beam onto a substrate held by the positioner; and a controller configured to control the positioner and the projection system to perform an exposure process according to operating data determined as specified in any one of items 14 to 27. 31. A computer system configured to perform a method for determining operational data of a control system for a lithography apparatus, the method comprising: obtaining risk level data for each of a plurality of regions on a surface of a movable structure holding a substrate during a scanning process; and determining operational data to be used during the scanning process when an exposure field of view is over each region, based on the obtained risk level data; wherein the risk level data depends on the nature of the particular product being manufactured and / or user preference data. 32. A method for determining operational data for controlling a lithography apparatus, the method comprising: obtaining risk level data for each of a plurality of regions on a surface of a movable structure holding a substrate during a scanning process; and determining operational data to be used during the scanning process when an exposure field of view is over each region, based on the obtained risk level data; wherein the risk level data depends on the nature of the particular product being manufactured and / or user preference data. 33. A computer program including computer-interpretable code, which, when executed by a control system of an immersion lithography apparatus, causes the immersion lithography apparatus to perform an exposure process according to operating data as determined in clause 32. 34. An immersion lithography apparatus, comprising: a liquid confinement structure; a positioner; a projection system for projecting a radiation beam onto a substrate held by the positioner; and a controller configured to control the positioner and the projection system to perform an exposure process according to operating data determined as specified in clause 32. 35. A method for determining the nature of an exposure process, the method comprising: obtaining a first set of contact linear velocity profiles for a first exposure process, the first set of contact linear velocity profiles providing preferred edge water loss performance, wherein each contact linear velocity profile in the first set of contact linear velocity profiles defines a movement speed at which the trailing edge of a fluidized structure can cross a gap between a substrate and a substrate support while achieving the preferred edge water loss performance; determining a second set of contact linear velocity profiles for a second exposure process different from the first exposure process, wherein each contact linear velocity profile in the second set of contact linear velocity profiles defines a movement speed at which the trailing edge of a fluidized structure crosses the gap between the substrate and the substrate support; and determining the nature of the second exposure process to minimize the total difference between the first set of contact linear velocity profiles and the second set of contact linear velocity profiles. 36. A computer program including computer-interpretable code, which, when executed by a control system of an immersion lithography apparatus, causes the immersion lithography apparatus to perform an exposure process determined according to the method described in clause 35. 37. An immersion lithography apparatus comprising: a liquid confinement structure; a positioner; a projection system for projecting a radiation beam onto a substrate held by the positioner; and a controller configured to control the positioner and the projection system to perform an exposure process determined according to the method described in claim 35. 38. A computer system configured to perform a method for determining the position of a substrate on a substrate support, the method comprising: Obtain the properties of the substrate; Obtain the properties of the substrate support; To obtain one or more performance measures of the substrate when it is mounted on the substrate support; and The position of the substrate on the substrate support is determined based on the properties of the substrate, the properties of the substrate support, and one or more performance measures. 39. The computer system according to clause 38, wherein the properties of the substrate, the properties of the substrate support, and the one or more performance measures are measured and / or known data. 40. The computer system according to clause 38 or 39 further includes using a model to determine the position of the substrate on the substrate support based on the properties of the substrate, the properties of the substrate support, and the one or more performance measures. 41. The computer system according to any one of clauses 38 to 40, wherein determining the position of the substrate on the substrate support includes determining the size and variation of the effective gap between the substrate and the ring of the substrate support. 42. A method for determining the position of a substrate on a substrate support, the method comprising: Obtain the properties of the substrate; Obtain the properties of the substrate support; To obtain one or more performance measures of the substrate when it is mounted on the substrate support; and The position of the substrate on the substrate support is determined based on the properties of the substrate, the properties of the substrate support, and one or more performance measures. 43. The method according to clause 42, wherein the properties of the substrate, the properties of the substrate support, and the one or more performance measures are measured and / or known data. 44. The method according to clause 42 or 43 further includes using a model to determine the position of the substrate on the substrate support based on the properties of the substrate, the properties of the substrate support, and the one or more performance measures. 45. The method according to any one of clauses 42 to 44, wherein determining the position of the substrate on the substrate support includes determining the size and variation of the effective gap between the substrate and the ring of the substrate support.

[0190] Although the use of embodiments of the present invention in the context of optical lithography may have been specifically mentioned above, it should be understood that the present invention is not limited to optical lithography where the context permits.

[0191] While specific embodiments of the invention have been described above, it should be understood that the invention can be practiced in other ways than those described. The above description is intended to be illustrative and not restrictive. Therefore, those skilled in the art will understand that modifications can be made to the described invention without departing from the scope of the claims set forth below.

Claims

1. A computer system configured to perform a method for determining operational data of a control system for a lithography apparatus, the method comprising: Determine the initial operating data used to perform the exposure process on the substrate; Repeatedly change the initial operating data and determine one or more performance metrics of the changed operating data in order to determine changes to the initial operating data that improve the one or more performance metrics; as well as Use operational data with the applied changes to improve one or more of the performance metrics; in: The operational data includes the path of the substrate for performing the exposure process and the movement of the substrate along the path; The one or more performance metrics include the total time required for the exposure process, the defect rate of the exposure process, and / or the sustainability of the exposure process; and The changes applied to the operating data include: changes to the path and / or changes to the acceleration of the substrate along a portion of the path.

2. The computer system of claim 1, further comprising receiving data related to the exposure process; and The initial operating data is determined based on the received data, wherein the received data related to the exposure process is expected to include physical data and heuristic / user-based data.

3. The computer system according to claim 2, wherein the physical data includes: Physical data relating to one or more of the processes performed for the exposure process, fluid handling structures, substrate supports, and substrate stages; in: Physical data regarding the performed process includes one or more of the following: substrate properties, resist contact angle, leaching properties, and resist type; Physical data regarding the fluid processing structure includes: data on the properties of the fluid flow, the shape of the fluid processing structure, and one or more of the available flight altitudes of the fluid processing structure; Physical data regarding the substrate support includes: data regarding the fluid extraction system, the ring structure of the substrate support located radially outward from the substrate, the nature of the fluid flow in the fluid extraction system, the shape and dimensions of the fluid extraction system, the permissible clearance dimensions between the ring structure and the substrate, and one or more of the available locations of the substrate on the substrate support; and The physical data regarding the substrate stage includes: data regarding the path required to set up the first exposure process, the maximum available accelerometer, movement constraints, and one or more of the movement, and / or The heuristic data / user-based data mentioned therein includes user observations from previous use cases and user-defined parameters of the exposure process.

4. The computer system according to any one of the preceding claims, wherein the method is performed by a model, wherein the model iteratively changes the operational data in order to determine an improvement in one or more performance metrics of the operational data.

5. The computer system according to any one of the preceding claims, wherein the changes applied to the operational data include: Reduce the length of one or more linear movements along the said route, and / or The changes applied to the operational data include one or more of the following: Different gases are used in the gas knife of the lithography equipment; Reduce the power consumption of the photolithography equipment; Change the flight altitude of the fluid processing structure; Change the determination of the position where the substrate is positioned on the substrate support; Change the angle of the gap between the edge of the fluid processing structure and the surrounding portion of the substrate and the substrate support; as well as The orientation of the fluid processing structure relative to the direction of movement of the fluid processing structure is changed.

6. The computer system according to any one of the preceding claims, wherein the change applied to the operational data comprises: The acceleration or rate of change of acceleration or the rate of change of the rate of change of acceleration is arranged to be substantially constant as the fluid processing structure passes over the notch of the substrate, and / or the method determines the operating data before starting the exposure process that will use the operating data, and / or the method determines changes to the operating data during the exposure process based on the operating data, and / or the lithography apparatus is an immersion lithography apparatus.

7. A method for determining operating data for controlling a photolithography apparatus, the method comprising: Determine the initial operating data used to perform the exposure process on the substrate; Repeatedly change the initial operating data and determine one or more performance metrics of the changed operating data in order to determine changes to the initial operating data that improve the one or more performance metrics; as well as Use operational data with the applied changes to improve one or more performance metrics; in: The operational data includes the path of the substrate for performing the exposure process and the movement of the substrate along the path; The one or more performance metrics include: the total time required for the exposure process, the defect rate of the exposure process, and / or the sustainability of the exposure process; and The applied changes to the operational data include changes to the path and / or changes to the acceleration of the substrate along a portion of the path.

8. The method according to claim 7, further comprising: Receive data related to the exposure process; as well as The initial operating data is determined based on the received data, which preferably includes physical data and heuristic / user-based data related to the exposure process.

9. The method of claim 8, wherein the physical data comprises: Physical data relating to one or more of the processes performed for the exposure process, fluid handling structures, substrate supports, and substrate stages; in: Physical data regarding the performed process includes one or more of the following: substrate properties, resist contact angle, leaching properties, and resist type; Physical data regarding the fluid processing structure includes: data on the properties of the fluid flow, the shape of the fluid processing structure, and one or more of the available flight altitudes of the fluid processing structure; Physical data regarding the substrate support includes: data regarding the fluid extraction system, the ring structure of the substrate support located radially outward from the substrate, the nature of the fluid flow in the fluid extraction system, the shape and dimensions of the fluid extraction system, the permissible clearance dimensions between the ring structure and the substrate, and one or more of the available locations of the substrate on the substrate support; and The physical data regarding the substrate stage includes: data regarding the path required to set up the first exposure process, the maximum available accelerometer, movement constraints, and one or more of the movement, and / or The heuristic data / user-based data mentioned therein includes user observations from previous use cases and user-defined parameters of the exposure process.

10. The method according to any one of claims 7-9, wherein the method is performed by a model, and preferably, wherein the model iteratively changes the operational data to determine an improvement in one or more performance metrics of the operational data.

11. The method according to any one of claims 7-10, wherein the modification applied to the operational data includes: Reduce the length of one or more linear movements along the said route, and / or The changes applied to the operational data include one or more of the following: Different gases are used in the gas knife of the lithography equipment; Reduce the power consumption of the photolithography equipment; Change the flight altitude of the fluid processing structure; Change the determination of the position where the substrate is positioned on the substrate support; Change the angle of the gap between the edge of the fluid processing structure and the surrounding portion of the substrate and the substrate support; as well as The orientation of the fluid processing structure relative to the direction of movement of the fluid processing structure is changed.

12. The method according to any one of claims 7-11, wherein the change applied to the operational data comprises: The acceleration or rate of change of acceleration or the rate of change of the rate of change of acceleration is arranged to be substantially constant as the fluid processing structure passes over the notch of the substrate, and / or the method determines the operating data before starting the exposure process that will use the operating data, and / or the method determines changes to the operating data during the exposure process based on the operating data, and / or the lithography apparatus is an immersion lithography apparatus.

13. A method of manufacturing a device using an immersion lithography apparatus, the method comprising performing an exposure process according to operating data determined according to any one of claims 7-12.

14. A computer program including computer-interpretable code, which, when executed by a control system of an immersion lithography apparatus, causes the immersion lithography apparatus to perform an exposure process according to operating data determined in any one of claims 7-12.

15. An immersion lithography apparatus, comprising: Liquid confinement structure; Positioner; A projection system for projecting a radiation beam onto a substrate held by the positioner; as well as A controller configured to control the positioner and the projection system to perform an exposure process based on operational data determined in any one of claims 7-12.

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