Disturbance compensation for charged particle beam devices

Abstract

A charged particle beam device, e.g. for repair tasks, can be subject to disturbances. For example, when performing a steering pattern for repairing a defect on a lithography mask, sensor output of one or more sensors is used to compensate for the disturbances.

Description

Technical Field

[0001] Various embodiments of the present invention generally relate to a charged particle beam device and a method of operating the charged particle beam device. The various embodiments specifically relate to disturbance compensation during operation of the charged particle beam device. Background Technology

[0002] Charged particle beam devices can be used for microscopy or manipulation of structures such as semiconductors. Charged particles that can be used in charged particle beam devices include electrons, positrons, muons, and ions. Examples of charged particle beam devices include scanning electron microscopes (SEMs), focused ion beam (FIB) devices, and SEMs containing multiple beams, sometimes referred to as multi-SEMs.

[0003] For example, JP2004-079334 discloses an electron beam apparatus having a semiconductor electron beam detector for detecting electron beams, such as an electron microscope and an electron beam lithography apparatus. Multiple electron beam sensors are arranged on opposite sides of a mounting substrate, allowing for easy replacement of the semiconductor electron beam detector when it is replaced.

[0004] Images of the object can be recorded using a particle microscope. This allows for the analysis of surface structure (inspection mode), for example. Furthermore, the sample can be modified, for example, by removing material or by depositing material (manipulation mode). For example, a charged particle beam device can be used to modify / manipulate a photolithographic mask. This charged particle beam device is then sometimes referred to as a repair device. Examples of such repair devices are disclosed in US20200912914, the contents of which are incorporated herein by reference.

[0005] US2018 / 0277361 A1 discloses a method for depositing material on a sample, the method comprising guiding a beam of charged particles to a substrate to induce deposition from a precursor gas of a protective layer above a region of interest. The protective layer may be a composite mixture of materials having a dot array substantially matching the dot array of the substrate.

[0006] Typically, disturbances can cause irregular operation of charged particle beam devices. For example, external disturbances such as varying temperature, pressure, and vibration often affect the beam positioning of the particle beam relative to the sample stage.

[0007] Closed-loop control for compensating for beam deflection is not always possible because measuring the beam deflection of the charged particle beam is impossible or only possible to a limited extent during operation in inspection or manipulation modes. Positive compensation for individual disturbances is known in the prior art. This is explained below.

[0008] For example, JP2003173755 discloses a charged particle beam device comprising an active magnetic field source configured to eliminate disturbances caused by an external magnetic field. However, it has been observed that the technique disclosed in JP 2003173755 only achieves insufficient compensation for placement offset.

[0009] US3842272 discloses a scanning charged particle microprobe system. The beam scans a sample in a predetermined pattern. Stray external electric and magnetic fields can be compensated for by applying a beam correction signal to the beam scanning device. Again, using techniques such as those disclosed in US3842272 only achieves insufficient compensation for placement offsets caused by these stray external electric and magnetic fields.

[0010] US6,043,490 discloses a charged particle beam apparatus comprising components for individually detecting the x and y components of mechanical vibration, and components for correcting the x-scan and y-scan signals to eliminate the effects of mechanical vibration. The technology employed in US6,043,590 provides only limited capability to compensate for beam placement misalignment of the charged particle beam apparatus due to disturbances.

[0011] US9,601,310 discloses a charged particle microscope including a barometric pressure sensor. A control program is used to compensate for relative positional errors between the charged particle beam and the sample holder based on sensor signals from the barometric pressure sensor. The technique disclosed in US9,601,310 can only achieve limited accuracy in compensating for placement offsets caused by disturbances.

[0012] US4,698,503 discloses a refocusing device for a transmission electron microscope, operable to process electron beam sensor output signals at discrete illumination angles. Summary of the Invention

[0013] Therefore, advanced technologies are needed to compensate for beam shift of the charged particle beam device on the sample stage caused by multiple perturbations. Consequently, with the increasing demands for resolution, advanced technologies are required to compensate for beam aberrations such as beam blurring of the charged particle beam device caused by multiple perturbations.

[0014] This objective can be achieved through the features of the independent claims, while the features of the dependent claims define the specific embodiments.

[0015] According to the example, the charged particle beam device includes a beam source, at least one beam deflection unit, and a sample stage.

[0016] In some instances, charged particle beam devices implement charged particle beam repair devices, in which case the charged particle beam repair device also includes a precursor gas source. This precursor gas source includes a gas supplier, a supply valve, and a supply nozzle located near the sample stage. Sometimes, the charged particle beam repair device may include multiple precursor gas sources to supply different types of precursor gases.

[0017] Each of at least one beam deflection unit is configured to deflect a beam of charged particles (e.g., electrons or ions) to position the beam on the sample stage.

[0018] The charged particle beam repair device includes multiple sensors configured to measure multiple perturbations of multiple physical quantities, all of which affect the beam offset of the beam on the sample stage.

[0019] The charged particle beam repair device also includes at least one control unit, such as a microprocessor or processor configured to execute program code loaded from memory. Embedded electronics can be used. Field programmable gate arrays (FPGAs) can be used to implement the control unit.

[0020] The at least one control unit has various tasks of beam control and processing control.

[0021] The at least one control unit can also process sensor outputs provided by multiple sensors to determine one or more compensation signals to counteract beam deflection.

[0022] In some instances, such as when performing a manipulation mode to complete a sample repair task, the at least one control unit is also configured to provide control signals to the beam source, the at least one beam deflection unit, and the precursor gas source to perform electron beam sensing manipulation of the sample mounted on the sample stage.

[0023] The at least one control unit is configured, for example, during manipulation of the electron beam sensing or when operating in imaging mode, to provide one or more compensation signals to at least one of the beam source, the at least one beam deflection unit, the sample stage of the charged particle beam repair device, or one or more compensator modules, or to be disposed therearound.

[0024] This technology can reduce or completely compensate for disturbances during the operation of charged particle beam devices, such as when operating in imaging or manipulation modes. For example, a semiconductor mask or other object to be repaired may undergo one or more repair tasks in manipulation mode. By reducing or compensating for disturbances during manipulation, damage to the mask can be avoided.

[0025] This document discloses a method for manipulating a sample mounted on a sample stage of a charged particle beam repair apparatus. The charged particle beam repair apparatus includes a beam source, at least one beam deflection unit, a precursor gas source, and the sample stage. The at least one beam deflection unit is configured to deflect a charged particle beam originating from the beam source to position the beam on the sample stage. The method includes obtaining sensor outputs from a plurality of sensors of the charged particle beam repair apparatus. The plurality of sensors measure a plurality of perturbations of a plurality of physical quantities, wherein each physical quantity affects a beam offset of the beam on the sample stage. The method further includes determining one or more compensation signals to counteract the beam offset based on the sensor outputs of the plurality of sensors. The method further includes providing control signals to the beam source, the at least one beam deflection unit, and the precursor gas source to perform electron beam-induced manipulation of the sample. The method further includes providing one or more compensation signals to at least one of the beam source, the at least one beam deflection unit, the sample stage, or the one or more compensator modules during electron beam-induced manipulation. A computer program or computer program product or computer-readable storage medium includes program code. The program code can be loaded and executed by at least one processor. The at least one processor is configured to perform the method of this manipulation sample when the program code is loaded and executed.

[0026] In some instances, the charged particle beam apparatus includes a beam source, at least one beam deflection unit, and a sample stage. The at least one beam deflection unit is configured to deflect a beam originating from the beam source to position the beam on the sample stage. The charged particle beam apparatus includes multiple sensors configured to measure multiple perturbations of multiple physical quantities, each physical quantity affecting beam offset on the sample stage. The at least one control unit is configured to determine, based on the sensor outputs of the multiple sensors, metadata indicating one or more compensation operations to counteract beam offset in imaging data acquired by the charged particle beam restoration apparatus operating in imaging mode. This metadata may be stored in association with the image data.

[0027] This document discloses a method for post-processing image data acquired by a charged particle beam apparatus. The charged particle beam apparatus includes a beam source, at least one beam deflection unit, and a sample stage. The at least one beam deflection unit is configured to deflect a beam originating from the beam source to position the beam on the sample stage. The method includes obtaining sensor outputs from multiple sensors of the charged particle beam apparatus. The multiple sensors measure multiple perturbations of multiple physical quantities, each physical quantity affecting beam offset on the sample stage. The method also includes determining metadata based on the sensor outputs of the multiple sensors. This metadata indicates one or more compensation operations for compensating for beam offset in the image data. Image data is acquired by the charged particle beam apparatus when it is operating in imaging mode. The method also includes post-processing the image data based on the metadata and according to one or more compensation operations.

[0028] Multiple sensors may include one or more laser interferometers, for example, configured to measure the position of the sample stage relative to the vacuum chamber; and / or configured to measure the position of the platform sample relative to the particle beam column of the charged particle beam repair device. Spatial resolution may be no worse than 10 nm, and selectivity no worse than 2 nm.

[0029] Multiple sensors may include one or more linear encoders, for example, configured to measure the position of the sample stage relative to the vacuum chamber; and / or configured to measure the position of the platform sample relative to the particle beam column of the charged particle beam repair apparatus. Spatial resolution may be no worse than 10 nm, and selectivity no worse than 2 nm.

[0030] Multiple sensors may include one or more accelerometers.

[0031] Multiple sensors may include one or more sound sensors.

[0032] Multiple sensors can be configured to sense one or more components of the magnetic field.

[0033] Multiple sensors can be configured to sense one or more components of the magnetic field.

[0034] The plurality of sensors may include one or more sensors configured to provide a signal synchronized with the AC main voltage.

[0035] At least one of the plurality of sensors may be configured within the vacuum chamber of the charged particle beam repair device.

[0036] At least one of the plurality of sensors may be configured outside the vacuum chamber of the charged particle beam repair device.

[0037] The control unit can be configured to provide the one or more compensation signals in real time; that is, the processing stack from acquiring the sensor outputs of multiple sensors to providing the corresponding one or more compensation signals can operate with a delay of less than one millisecond or even less than one microsecond. The computer program, computer program product, or computer-readable storage medium includes program code. The program code can be loaded and executed by at least one processor. The at least one processor is configured to perform a method for subsequently processing image data when the program code is loaded and executed.

[0038] This technology can reduce or completely compensate for disturbances in the post-processing of imaging data acquired by charged particle beam devices, such as when operating in imaging mode.

[0039] The beam deflection unit disclosed in this paper can be an electrostatic or magnetic / magnetic-static beam deflection unit. Specifically, the beam deflection unit can be an electrostatic deflection system configured behind the final lens (octet lens) of an electron microscope. This type of electrostatic or magnetic compensation is unaffected by mechanical inertia and can therefore actively counteract rapid vibrations up to the kHz range.

[0040] For example, a first beam deflection unit may deflect an electron beam for electron beam-induced manipulation or imaging; a second beam deflection unit may be controlled to compensate for disturbances. Thus, the first beam deflection unit can be dedicated to electron beam-induced manipulation or imaging, while the second beam deflection unit can be dedicated to electron beam-induced disturbance compensation. For example, the first beam deflection unit may be located upstream or downstream of the electron beam relative to the second beam deflection unit. The first beam deflection unit is configured to apply a first beam deflection to the electron beam, and the second beam deflection unit is configured to apply a second beam deflection to the electron beam. The resulting total deflection may be a superposition of the first and second deflections. By providing dedicated beam deflection units for both imaging or manipulation and compensation, the control of the beam deflection units can be simplified.

[0041] Furthermore, the hardware of the first and second beam deflection units can be adapted to their respective operations.

[0042] If multiple beam deflection units are available, their operating bandwidths may vary. In other words, if multiple beam deflection units are available, they may be relatively fast or relatively slow in deflecting charged particle beams. For example, a magnetostatic beam deflection unit can have an operating bandwidth in the range of kilohertz to tens of kilohertz. Therefore, a magnetostatic beam deflection unit may be relatively slow. Typically, such a magnetostatic beam deflection unit is used for imaging samples. This is because a relatively long dwell time is required anyway, so there is no need to scan the charged particle beam particularly quickly. On the other hand, an electrostatic beam deflection unit can have a relatively large operating bandwidth in the range of megahertz to tens of megahertz. Therefore, the operating bandwidth of an electrostatic beam deflection unit is larger than that of a magnetostatic beam deflection unit. Typically, an electrostatic beam deflection unit is used for manipulation work because a relatively small dose of charged particle exposure is required.

[0043] If multiple beam deflection units are available, their deflection ranges may differ. The deflection range represents the maximum beam deflection that can be applied. For example, a magnetostatic beam deflection unit may have a larger deflection range, while an electrostatic beam deflection unit may have a smaller deflection range.

[0044] This invention discloses a charged particle beam device, including a beam source, a plurality of beam deflection units, and a sample stage. Each of the plurality of beam deflection units is configured to deflect a beam of charged particles. The charged particles originate from the beam source. The deflection is intended to position the beam on the platform. The charged particle beam device includes at least one sensor. The at least one sensor is configured to measure at least one perturbation of at least one physical quantity. Each of the at least one physical quantity affects the beam offset of the beam on the platform. The charged particle beam device also includes at least one control unit. The at least one control unit is configured to determine one or more compensation signals based on the sensor output of the at least one sensor to counteract the beam offset. The at least one control unit is configured to provide control signals to the beam source and a first of the plurality of beam deflection units to perform imaging of a sample mounted on the sample stage. The at least one control unit is further configured to provide one or more compensation signals to a second of the plurality of beam deflection units during imaging.

[0045] For example, the first of the plurality of beam deflection units is a magnetic beam deflection unit; the second of the plurality of beam deflection units may be an electrostatic beam deflection unit.

[0046] The first of the plurality of beam deflection units may have a first operating bandwidth, while the second of the plurality of beam deflection units may have a second operating bandwidth, wherein the second operating bandwidth may be greater than the first operating bandwidth. In other words, imaging can be performed using a relatively slow magnetostatic beam deflection unit, and compensated for using a relatively fast electrostatic beam deflection unit.

[0047] This invention discloses a method for imaging a sample mounted on a sample stage of a charged particle beam apparatus. The charged particle beam apparatus includes a beam source, a plurality of beam deflection units, and a sample stage. Each of the plurality of beam deflection units is configured to deflect a beam of charged particles originating from the beam source to position the beam on the sample stage. The method includes providing a control signal to a first of the plurality of beam deflection units to perform imaging of the sample. The method further includes obtaining sensor outputs from one or more sensors of the charged particle beam apparatus. The one or more sensors measure one or more disturbances of one or more physical quantities, each affecting a beam offset of the beam on the sample stage. The method further includes determining one or more compensation signals based on the sensor outputs of the one or more sensors to compensate for the beam offset. The method further includes providing the one or more compensation signals to a second of the plurality of beam deflection units.

[0048] It should be understood that the features mentioned above and those to be explained below can be used not only in the corresponding combinations indicated, but also in other combinations or alone, without departing from the scope of the invention. Attached Figure Description

[0049] Figure 1 The illustrations illustrate the placement offset of charged particle beams according to various examples.

[0050] Figure 2 illustrative examples based on various instances Figure 1 Compensation for placement offset in the process.

[0051] Figure 3 illustrative examples based on various instances Figure 1 Compensation for placement offset in the process.

[0052] Figure 4 The illustrations illustrate the focus shift and corresponding compensation of charged particle beams according to various examples.

[0053] Figure 5 The illustrations demonstrate focus offset and corresponding compensation for various instances.

[0054] Figure 6 The schematic illustrations illustrate charged particle beam devices according to various examples.

[0055] Figure 7 The flowchart shows the methods based on various instances.

[0056] Figure 8 The flowchart shows the methods based on various instances.

[0057] Figure 9 The illustrations depict characteristic finger-like ripples in time-series data and corresponding physical quantity disturbances from sensor outputs for various examples.

[0058] Figure 10 The flowchart shows the methods based on various instances.

[0059] Figure 11 The illustrations illustrate the implementation of charged particle beam devices through repair devices based on various examples.

[0060] Figure 12 illustrative examples based on various instances regarding Figure 11 Sensor placement in the repair device.

[0061] Figure 13 illustrative examples based on various instances, such as Figure 11 Sensor placement in the repair device.

[0062] Figure 14 The illustrations illustrate defects in photomasks based on various examples.

[0063] Figure 15 The illustrations illustrate repaired defects in photomasks based on various examples.

[0064] Figure 16 The schematic illustrations illustrate charged particle beam devices according to various examples.

[0065] Figure 17 The schematic illustrations illustrate charged particle beam devices according to various examples. Detailed Implementation

[0066] Some examples of the present invention typically provide multiple circuits or other electrical devices. All references to circuits and other electrical devices and the functions provided by each device are not intended to be limited to what is illustrated and described herein. While specific labels may be designated for the various circuits or other electrical devices disclosed, such labels are not intended to limit the scope of operation of the circuits and other electrical devices. These circuits and other electrical devices may be combined and / or separated from each other in any manner based on a particular type of desired electrical implementation. It should be understood that any circuit or other electronic device disclosed herein may include any number of microcontrollers, graphics processing units (GPUs), integrated circuits, memory devices (e.g., flash memory, random access memory (RAM), read-only memory (ROM), electrically programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or other suitable variations thereof), and software that cooperates with each other to perform the operations disclosed herein. Additionally, any one or more of the electrical devices may be configured to execute program code specifically implemented in a non-transitory computer-readable medium, which is written to perform any number of functions as described in this invention.

[0067] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the following description of the specific embodiments should not be considered as limiting. The scope of the present invention is not intended to be limited to the specific embodiments or drawings described below, which are merely illustrative.

[0068] The accompanying drawings are to be considered schematic representations, and the elements illustrated in the drawings are not necessarily shown to scale. Rather, the various elements are shown to enable those skilled in the art to understand their function and general purpose. Any connection or coupling between functional blocks, devices, components, or other entities or functional units shown in the drawings or described herein may also be implemented via indirect connection or coupling. Coupling between components may also be established via wireless connection. Functional blocks may be implemented using hardware, firmware, software, or a combination thereof.

[0069] The following discloses techniques related to particle beam devices. In particular, techniques related to charged particle beam devices are disclosed. The charged particles that can be used in such devices are electrons and / or ions. In other instances, uncharged particles, such as photons, can be used. However, for illustrative purposes, several techniques will be disclosed below in the context of charged particle beam devices.

[0070] Examples of charged particle beam devices include: SEMs; aberration-corrected SEMs (typically with relatively large detector apertures, resulting in a smaller focal depth range); FIB devices; multi-SEMs; cross-beam devices, including SEM and FIB optics; and SEMs or FIBs with precursor gas sources for repair / circuit editing tasks in manipulation modes (also known as repair devices; as will be combined below). Figure 11 (Further detailed explanation).

[0071] Repair tasks involve modifying structures on semiconductor masks used for photolithography. Repair tasks are achieved through electron beam-induced manipulation of the sample based on the interaction of one or more precursor gases with the electron beam. Alternatively or additionally, ions can be used for repair or editing tasks. In some instances, repair tasks are used to modify semiconductor devices, such as circuitry on a wafer. Specifically, charged particles—such as electrons or ions like helium or neon—are used to alter this structure. For example, a charged particle beam interacts with one or more precursor gases selectively supplied to the sample stage. One or more components of the one or more precursor gases are then deposited onto the structure. In some instances, a focused ion beam, for example, can be used to remove material. Repair tasks are typically associated with manipulation modes of charged particle beam devices that manipulate the sample / sample. Specifically, in mask repair work using low-energy electron beams (200 V – 2 kV), it is necessary to address and repair structural precision in the nanometer range (deposition and etching processes). For this purpose, a stationary platform (sample) and a undisturbed relative motion between the platform (sample) and the electron beam are particularly important. Such relative motion can be caused by external disturbances such as sound effects, electromagnetic interference, and mechanical vibrations. Specifically, platform vibration (detected by a Michelson interferometer in our case) can lead to relative motion between the platform and the electron beam, thereby compromising restoration accuracy (minimum restoration accuracy). Typically, restoration tasks involve using appropriate control signals to control the beam source, beam deflection unit, and precursor gas source, thereby implementing electron beam-induced manipulation of the sample. Examples of manipulation include electron beam-induced deposition (EBID) and electron beam-induced etching (EBIE). These will be discussed later. Figure 14 and Figure 15 A more detailed explanation of the exemplary repair task follows.

[0072] The various techniques revealed in this paper are based on this finding: as the typical size of the studied or modified structure (typically, the critical size that marks the smallest structural size that needs to be processed) continues to decrease, the operation of charged particle beam devices increases. For example, a typical critical size can be less than 7 nanometers or even less than 5 nanometers.

[0073] The following discloses techniques that enable charged particle beam devices to operate with high precision in inspection and / or manipulation modes, in order to handle structures with small critical dimensions (e.g., critical dimensions below 7 nanometers or even below 5 nanometers).

[0074] This is achieved by providing one or more compensation signals to compensate for the beam offset. Details regarding this beam offset and related compensation will be revealed in conjunction with the following diagram.

[0075] Figure 1The diagram schematically illustrates a charged particle beam 91, such as an electron beam or an ion beam, like a helium ion beam. The charged particle beam 91 is focused onto a specific position 85 on the sample stage 113 of the charged particle beam apparatus by the optical devices of the beam deflection unit 112. However, due to one or more perturbations, beam offset occurs, specifically a placement offset 81, which moves the charged particle beam 91 to another position 86 on the sample stage 113. This is a displacement along the x-direction. Similarly, a displacement along the y-direction is also possible. Furthermore, in addition to this placement offset 81, perturbations may introduce other aberrations that lead to reduced accuracy.

[0076] Typically, the accuracy of charged particle beam apparatus depends on the resolution of the charged particle beam and its placement on the sample stage. Typical resolution is defined by the beam diameter, usually in the range of 3 to 5 nanometers or even lower (for aberration-corrected instruments, the beam diameter is less than 1 nanometer). On the other hand, the placement of the charged particle beam on the sample stage is typically affected by multiple perturbations of several physical quantities that influence beam offset, including the combination mentioned above. Figure 1 The description refers to the placement offset. Another type of beam offset is focus offset, which will be discussed later. Figure 4 and Figure 5 Explain it.

[0077] This relatively random placement offset, which reduces beam placement accuracy, is particularly important for the operation of charged particle beam devices because the specifications imposed on the placement accuracy of the charged particle beam on the sample stage are often even higher than the specifications for beam diameter / resolution. One reason for this is that, for example, related to the manipulation mode, certain structures need to be generated or repaired with an accuracy of less than 3 nanometers, with selectivity less than 2 nanometers, or even less than 1 nanometer. Furthermore, while placement offsets during operation in inspection mode may degrade the overall image quality of the acquired images, placement offsets caused by perturbations during operation can lead to damage to expensive semiconductor structures or even photomasks.

[0078] Therefore, a technique has been revealed to facilitate compensation for placement offset and focus offset by providing one or more compensation signals when the charged particle beam device is operating in manipulation mode.

[0079] According to various examples, charged particle beam devices include multiple sensors for measuring multiple perturbations of multiple physical quantities. These multiple physical quantities all affect the beam deflection of the beam on the sample stage. The charged particle beam device also includes a control unit configured to determine one or more compensation signals based on the sensor outputs of the multiple sensors to compensate for the beam deflection. The control unit is configured to provide one or more compensation signals to at least one of the beam source of the charged particle beam device, the beam deflection unit of the charged particle beam device, the sample stage, or one or more compensator modules.

[0080] Typically, beam offset can include placement offset (in Figure 1 Along the X or Y direction, i.e., along the plane of the sample stage 113) or focus offset (in Figure 1 At least one of the following: along the Z direction of the beam; or in a plane perpendicular to the sample stage 113.

[0081] Comprehensive compensation for beam offset is achieved by considering disturbances originating from multiple physical quantities. Specifically, more accurate compensation is achieved compared to existing techniques that consider only physical quantities such as temperature, pressure, vibration, or acoustic vibration (i.e., sound waves). Cross-correlation between different pairs of physical quantities can be considered, thus enabling more accurate compensation for beam offset. For example, nonlinear effects caused by cross-correlation can be taken into account.

[0082] Typically, depending on the instance, various physical quantities are considered for compensation. These physical quantities are selected from the following groups: acoustic vibration, vibration, pressure, humidity, laminar airflow, turbulent airflow, differential components, temperature, rate of change (i.e., the rate of change defined as changing with time), differential components, vectors (e.g., electric field, magnetic field) or scalars (e.g., temperature, pressure).

[0083] A differential component describes a spatial gradient of a corresponding quantity, such as a temperature gradient or a pressure gradient. Typically, this differential component imposes stress or strain on the material, thus causing a disturbance. Further examples include laminar or turbulent airflow.

[0084] In some instances, acoustic vibrations include external acoustic vibrations, such as those originating from objects moving around the charged particle beam device. Passive damping systems are known in the art to attempt to decouple the charged particle beam device from its surrounding environment. However, this passive damping typically cannot absorb all acoustic vibrations, thus active compensation as described herein may be desirable. Acoustic vibrations may have residual components from movable parts within the charged particle beam device. These internal parts may be excited by external acoustic vibrations via mechanical contact (e.g., via a floor or support wire) or by sound.

[0085] In some instances, pressure varies as a function of time. Compared to, for example, acoustic vibrations, pressure changes can occur over relatively long timeframes. Pressure stabilization systems are known to passively compensate for this; however, this passive compensation has limitations in accuracy. Coolant or ambient air pressure can also change. Changes in ambient air pressure alter the forces applied to the vacuum housing of the charged particle beam device, leading to changes in hardware configuration.

[0086] In some instances, temperature changes are compensated to some extent by passive temperature control, such as using a stable temperature storage device or an external air conditioning system. Active control, using the techniques disclosed herein, can more accurately compensate for even small temperature disturbances. For example, in various instances, a properly positioned temperature sensor is used to measure changes in the coolant temperature. In further instances, the coolant temperature is measured. In other instances, temperature changes in electronic control units or measuring devices are measured and compensated. According to examples, the temperature difference / gradient between two or more parts of a charged particle beam device is measured. For example, the temperature gradient between different measurement points in a fluid flow (e.g., coolant) is measured, and the corresponding disturbances are compensated.

[0087] Another physical property that could cause disturbances is the electric field. Existing systems typically employ appropriate shielding. However, while this shielding may be effective to some extent against external electric fields, it may not be easy to shield internal electric fields, such as those generated by current or induced current or capacitor charging, using external shielding. Charged particle beams can cause unwanted particles within the column to become charged. On the other hand, using the techniques described herein, in some instances, such as inside the vacuum cavity of a charged particle beam device, the electric field is measured using sensors close to the optical equipment, and then this electric field is compensated. Similar observations apply to magnetic fields.

[0088] As can be seen from the above, some perturbations (such as magnetic or electric fields) directly affect the charged particle beam by deflecting charged particles propagating along it. For example, an electric or magnetic field exerts a force on electrons or ions, causing these particles to deflect. These are direct perturbations. Perturbations can also indirectly affect the charged particle beam by influencing one or more parts of the charged particle beam apparatus. For example, acoustic vibrations cause a positional shift in the optical equipment of the beam deflection unit of the charged particle beam apparatus, and this positional shift then causes a beam deflection. An electric or magnetic field alters the analog supply current or voltage of the beam source or optical equipment of the beam deflection unit of the charged particle beam apparatus; this then affects the placement offset. These are indirect perturbations. Both direct and indirect perturbations can be compensated for according to the techniques disclosed herein.

[0089] For example, such as Figure 1 The placement offset shown, or more generally, beam offset, can occur in the imaging mode of a scanning electron microscope. Movement of magnetic materials such as iron, cobalt, nickel, and steel can alter the magnetic field at the location of the charged particle beam. This can be caused by movement around the charged particle beam device, for example, due to elevators, cranes, doors, crane trucks, moving people, cell phones, keys, etc.

[0090] Similar considerations apply to focused ion beam (FIB) devices. Using a focused ion beam, material can be removed from a sample in manipulated mode. If perturbation affects the ion beam, material from unwanted areas of the sample will be removed. Therefore, using the technique disclosed herein, the ion beam is stabilized separately on the sample and the sample stage. This helps avoid sample damage and achieves higher precision, for example, in the preparation of transmission electron microscopy sections or the study of 3D tomographic samples.

[0091] Similarly, for mask repair processing in manipulation tasks, structures on the photomask are repaired by using electron or ion beam-induced treatment of deposited material; and / or material is locally removed from the photomask. By using the techniques disclosed herein, any beam offset of the electron or ion beam relative to the photomask and the sample stage, respectively, is reduced, resulting in higher accuracy in manipulation tasks.

[0092] Typically, various options are available for compensating for beam offset, based on the disclosed examples. According to the examples, different options for compensating for beam offset are employed for different root causes of the disturbance. For example, as described above, different options for compensating for beam offset are employed for direct and indirect disturbances, respectively. For example, a compensation signal is applied to the optics of the beam deflection unit to redirect the beam in the direction opposite to the placement offset. For example, a compensation signal is applied to the focusing optics of the beam deflection unit to change the focal length, thereby compensating for the focal offset caused by the corresponding disturbance. In some examples, alternatively or additionally, the sample stage is repositioned to compensate for beam offset. In yet further examples, compensation is specifically provided for, for example, external coils applying a magnetic field or electric field plates applying an electric field. For example, compensation for a DC magnetic field or a slowly varying magnetic field is achieved using Helmholtz coil pairs, one pair for each spatial direction. This coil pair is positioned outside the housing of the charged particle beam device. According to further examples, active cooling or heating is used. For example, heating or cooling elements are provided in thermal contact with a coolant, and active temperature control is possible. In some examples, active damping is controlled to suppress vibrations. In some instances, the pressure is actively controlled. Hereinafter, devices or units that indirectly compensate for beam deflection (i.e., those that do not directly apply force to the charged particle beam by applying a magnetic or electric field, or do not move the sample stage relative to the charged particle beam) are referred to as compensator modules. These compensator modules are controlled by their respective compensation signals.

[0093] The following explanation focuses on applying a compensation signal to the beam deflection unit and / or the sample stage. Several example options for offsetting beam offset in this manner will then be explained.

[0094] Figure 2 Example of offsetting Figure 1 Place the aspect offset by 81 in the middle. For example... Figure 2As shown, the additional beam offset 82 that cancels the placement offset 81 is achieved by providing a control signal to the beam deflection unit 112. For example, an additional voltage is applied to the corresponding electronic lens.

[0095] Figure 3 Schematic example of offset Figure 1 The placement offset is 81. Figure 3 In this case, a compensation signal is applied to the control motor of the sample stage 113 to offset the stage shift 83 caused by the placement offset 81.

[0096] like Figure 3 Such techniques, as illustrated, could be particularly helpful for closed-loop control of the motorized platform 113. For example, interferometric trestles are known to achieve nanometer-level positioning accuracy.

[0097] The above has revealed the scenario of placement offset being affected by multiple perturbations. Alternatively or additionally, perturbations can affect the focus offset of the charged particle beam, in addition to affecting placement offset. This is in Figure 4 The explanation is as follows.

[0098] exist Figure 4 In the diagram, beam 91, unaffected by any disturbance, is illustrated. Furthermore, two disturbed beams 93 and 94, subjected to relative focus shifts 71 and 72, are illustrated. Focus shifts 71 and 72 can be compensated by applying additional defocus to these beams. The beam deflection unit 112 can thus be controlled accordingly. Defocus 75 for compensating focus shift 71 is illustrated here, and defocus 76 for compensating focus shift 72 is illustrated. In an alternative, such as... Figure 5 As shown, corresponding vertical stage shifts 77 and 78 can also be applied.

[0099] Based on various examples, focus shift compensation is applied to aberration-corrected SEMs. Typically, aberration-corrected SEMs have a relatively large numerical aperture, resulting in a shallow depth of focus. This aberration-corrected SEM can be used for manipulation tasks, where the thickness of the structure to be manipulated may be the same as or even smaller than the depth of focus. In this case, focus shift compensation is particularly important for obtaining good manipulation results.

[0100] Various techniques are based on this finding: perturbations can occur on different timescales. On the one hand, there may be slowly varying perturbations caused by factors such as DC magnetic fields, temperature, or pressure changes. Typically, the techniques disclosed herein can be used to compensate for these slowly varying perturbations, for example, by applying one or more compensation signals to counteract beam offset. In this paper, compensation is achieved by applying an additional voltage to the beam optics; see [link to relevant documentation]. Figure 2 or Figure 4 Compared to providing compensation based on stage displacement, it typically offers a shorter response time; see [link / reference]. Figure 3 and Figure 5This is because the movement of the stage typically requires a relatively long duration due to the limited speed of the motor. Operation of charged particle beam devices, such as imaging or manipulation modes, does not require pausing for this compensation; compensation can be applied during ongoing operation.

[0101] On the other hand, some perturbations may change on rapid timescales, such as within seconds or even in the sub-second range. Examples involve physical quantities such as acoustic or seismic vibrations, such as vibrations caused by the vibration of a building's foundation. To also compensate for this rapid perturbation, techniques for determining the predictive components of beam offset will be disclosed below. Alternatively or additionally, in a further example, information about this perturbation is stored, determined based on sensor outputs (e.g., together with imaging data acquired in imaging mode). In other words, according to the example, based on the sensor outputs of multiple sensors, metadata indicating one or more compensation operations is determined to counteract beam offset in image data acquired by a charged particle beam device operating in imaging mode, and the metadata is then associated with and stored with the image data. The acquired image data is then digitally post-processed to compensate for such perturbations based on the metadata after acquisition.

[0102] In some instances, disturbances were detected that caused the charged particle beam device to suspend operation. For example, the charged particle beam could be blanked. Imaging or operational modes were interrupted until the disturbance was resolved. This is particularly helpful in manipulation mode to avoid damaging the manipulated sample.

[0103] Figure 6 A charged particle beam apparatus 100 is schematically illustrated according to various examples. For example, the charged particle beam apparatus 100 may be a charged particle beam repair apparatus. The charged particle beam apparatus 100 includes a vacuum chamber 110. A beam source 111, a beam deflection unit 112 (generally, multiple beam deflection units may be used, for example, a first beam deflection unit for imaging and / or manipulation, and a second beam deflection unit for compensating for disturbances) and a sample stage 113 are disposed within the vacuum chamber 110. An embedded control unit 119 controls the beam source 111, the beam deflection unit 112, and the sample stage 113. The control unit 119 may also control other components of the charged particle beam apparatus 100, such as the control valve of the precursor gas source (…). Figure 6 (Not shown in the image).

[0104] The control unit 119 may be implemented using hardware and / or software. For example, the control unit 119 may include a proportional control module, such as one implemented in hardware. This proportional control module may be part of a closed-loop control system for compensating for disturbances and performs proportional calculations of the compensation signal based on one or more sensor signals. The proportional control module may determine the compensation signal by multiplying the input signal by a gain and adding it to an offset. This proportional control module may be a proportional-integral (PI) control module, a proportional-derivative (PD) control module, a proportional-integral-derivative (PID) control module, or a proportional-delay (PT) control module.

[0105] Two sensors 121 and 122 are also illustrated for measuring disturbances in physical quantities, each of which affects the beam offset of the charged particle beam 90 on the sample stage 113.

[0106] Although Figure 6 In this scenario, two sensors 121 and 122 are illustrated, but typically, only a single sensor or more than two sensors may be used.

[0107] In some instances, at least one of the multiple sensors is configured inside the vacuum chamber 110. Alternatively or additionally, at least one sensor is configured outside the vacuum chamber 110.

[0108] For example, sensors that measure the same physical quantity (e.g., temperature) are located at multiple locations. Thus, differential physical quantities, such as temperature or pressure difference, are measured.

[0109] By placing the sensor outside the vacuum chamber, physical quantities that vary slowly as a function of position, such as external electric or magnetic fields, can be measured. Simultaneously, the influence of sensor manipulation on the particle beam can be avoided. In some instances, the sensor is still placed closer to the beam path at 90°, for example, for physical quantities exhibiting strong position dependence.

[0110] Also illustrated is control unit 130. In some instances, control unit 130 is implemented by a computer. Control unit 130 communicates with embedded control unit 119 and sensors 121, 122. Although in Figure 6 The example illustrates a scenario where control unit 130 communicates directly with sensors 121 and 122, but in other instances this communication is performed via embedded control unit 119.

[0111] In any case, the control unit 130 obtains sensor signals 161, 162 (i.e., sensor outputs) from sensors 121, 122. Based on this, the control unit 130 provides one or more compensation signals 165 to one or more components of the charged particle beam device 100 to compensate for placement misalignment.

[0112] The control unit 130 includes a processor 132 coupled to memory 133. The processor 132 also communicates via a communication interface 131. The processor loads program code from memory 133 and executes the program code. While executing the program code, the processor 132 performs the techniques disclosed herein for compensating for multiple perturbations of various physical quantities that affect beam offset.

[0113] The control unit 130 also includes a human-machine interface (HMI) 134, such as a display, web interface, mouse, keyboard, etc. User input is received or information is output via the HMI 134. For example, an indication of a disturbance event at a specific location is obtained from the user via the HMI 134. In some instances, a warning is output to the user via the HMI 134.

[0114] While the following describes the context of beam offset compensation-related logic residing at control unit 130, in other instances, at least a portion of this logic resides at embedded control unit 119.

[0115] Figure 7 The flowchart shows the methods based on various instances. Figure 7 Examples such as Figure 6 Multiple stages of operation of the charged particle beam device 100. Figure 7 The method can be performed by control unit 130 and / or embedded control unit 119.

[0116] Step 6005 corresponds to the calibration phase. During the calibration phase, one or more transfer functions are established between the sensor outputs of multiple sensors measuring multiple physical quantities and compensating for signal disturbances. Training data for training machine learning algorithms can be obtained.

[0117] Therefore, this transfer function links the values ​​of multiple physical quantities (represented by sensor signals 161 and 162) to beam offset compensation (represented by compensation signal 165).

[0118] Therefore, step 6010 corresponds to the operation phase. During the operation phase, the charged particle beam device operates in either imaging or manipulation mode. For example, in part of the imaging mode, the control unit of the charged particle beam device may provide control signals to the beam source and beam deflection unit of the charged particle beam device to perform imaging of a sample mounted on the sample stage of the charged particle beam device. In part of the manipulation mode, the control unit of the charged particle beam device provides control signals to the beam source, beam deflection unit, and precursor gas source (e.g., including a gas tank or reservoir and a corresponding nozzle located near the sample stage; details will be combined with...). Figure 11(A) To implement electron beam-induced manipulation of a sample mounted on a sample stage. In this paper, a precursor gas supplied via a precursor gas source interacts with the electrons of the electron beam. The material can be deposited or locally etched.

[0119] During the operation phase, compensation is employed for multiple perturbations of various physical quantities, each of which affects the beam offset of the charged particle beam device relative to the sample stage. For example, the control unit uses the transfer function obtained from step 6005, based on the sensor outputs of multiple sensors, to determine one or more compensation signals to address any beam offset, and then provides one or more compensation signals to one or more parts of the charged particle beam device.

[0120] Figure 7 The text also illustrates a selective post-processing stage associated with step 6015. In this text, metadata acquired from the sensor outputs of multiple sensors is used to apply one or more compensation operations to counteract beam offset by post-processing the corresponding image data. In some instances, such compensation operations include applying imaging shifts, for example, shifting image pixels included in the image data by a specific image offset. Furthermore, rotation or tilt operations are used in further instances. In some instances, complex image artifacts are compensated for. Examples of image artifacts include artificially repetitive contrast. To compensate for this, a neural network, for example, that acquires configuration information in the form of metadata, can be used to implement the compensation operations.

[0121] like Figure 7 As shown by the dashed line, the calibration mode of step 6005 can be re-executed at any time. This allows for the capture of location-specific disturbances, i.e., events dependent on the specific deployment side of the charged particle beam device. This will be explained in more detail later.

[0122] Next, combined Figure 8 Details regarding the calibration phase of step 6005 are revealed.

[0123] Figure 8 The flowchart shows the methods based on various instances. Figure 8 Details of the calibration phase in step 6005 are illustrated.

[0124] For example, the calibration phase in step 6005 can be re-executed at any time, such as consecutively. The calibration phase can be performed each time a repair operation is scheduled. The calibration phase may also be performed by the manufacturer of the charged particle beam repair device.

[0125] Calibration allows for the determination of multiple parameter values ​​for the transfer function to fit the real dynamic system. This can be accomplished using known mathematical methods. Typically, a known perturbation is applied to the system, and the system's response is measured. The system's response is measured by rapidly and sequentially capturing images of the structure on a sample and determining the displacement of the imaged object as a function of time. This object can be a photomask or a sample specifically mounted in the system for this purpose. Sensor measurements are recorded simultaneously with image capture, allowing for a time-dependent relationship with the displacement.

[0126] Initially, at step 6105, one or more perturbations are applied; this is done by modifying one or more physical quantities. Some examples are: applying a perturbing electric or magnetic field (e.g., using a Helmholtz coil around a charged particle beam device), changing the ambient temperature (e.g., in a temperature-stable environment), changing the ambient pressure, etc., where the corresponding magnitude of the perturbation is known when one or more perturbations are actively applied.

[0127] As will be clear from the above, a "customized" perturbation event is thus triggered for calibration purposes.

[0128] Generally, the disturbance applied in step 6105 may originate from various sources: from naturally occurring disturbances in the system environment (background noise, ground vibration, electromagnetic radiation, etc.); or from actuators used for calibration purposes or permanently connected to the system. Examples include speakers, vibrators, antennas, and so on.

[0129] Typically, this active application of some kind of perturbation is optional. In other scenarios, at step 6110, naturally occurring perturbations, such as location-specific perturbations, are measured. In other words, in some scenarios, a perturbation event is actively triggered at step 6105; while in other scenarios, environmental perturbation events are monitored and characterized at step 6110.

[0130] Then, at step 6115, the beam offset can be measured.

[0131] This beam offset can be generated by a corresponding custom perturbation actively applied at step 6105; alternatively, the beam offset can be caused by naturally occurring perturbations (e.g., by environmental disturbance events). For example, the system's response can be measured by rapidly and continuously capturing images of structures on the sample and determining the displacement of the imaged object as a function of time. For example, measuring beam placement offset and / or focus offset. This can be achieved, for example, using a test pattern sample and a corresponding inspection task. For example, an image of the test pattern obtained by a charged particle device operating in imaging mode with the presence of perturbation is compared with ground truth knowledge about the test pattern. Conclusions about the beam offset are drawn based on the deviation between the image appearance of the test pattern and the ground truth of the test pattern. For example, image shift between the true location of certain features of the test pattern and the location depicted in the image can be determined. For example, image blur can be quantified to determine focus offset. For example, a marker structure (e.g., a drift marker or alignment marker) attached to a sample (e.g., the same sample for which a restoration work is scheduled) can be used, where the basic facts about the sample's position and / or relative alignment are known. The appearance of the marked structure can be determined based on images obtained from charged particle imaging; and the difference between its appearance and the actual situation can be determined. This difference can be used to determine beam offset. In step 6116, it can be determined whether the beam offset measured in step 6115 exceeds a certain threshold, i.e., is too large. If so, then step 6117 can be executed. Here, a warning or error message can be output. A fault mode can be actuated. Furthermore, at step 6120, a transfer function between the disturbance and the beam offset is determined. This transfer function is then stored for later use during compensation mode (see [link to documentation]). Figure 7 Step 6010).

[0132] Next, we will discuss various instances of determining the transfer function at step 6120.

[0133] In one example, a lookup table linking the sensor output to one or more compensation signals is used to determine these signals. In other words, for multiple disturbance intensities, such as multiple values ​​of various physical quantities, the associated beam offset and therefore the compensation signal required for compensation are determined. The corresponding value pairs are then stored in the lookup table. Linear interpolation can be optionally used during the operational phase to improve accuracy.

[0134] Lookup tables can be device-specific, meaning different charged particle beam devices can have different lookup tables. Location-specific perturbations can be used to populate such device-specific lookup tables. Lookup tables can also be stored in the cloud, allowing for retrieval via the network. This enables centralized maintenance and management of perturbation compensation for multiple charged particle beam devices.

[0135] Table 1 below provides an example lookup table:

[0136] +0.2K +0.3V +0.4K +0.58V +0.6K +0.88V

[0137] Table 1: An exemplary lookup table linking to temperature perturbations within the applied offset voltage at the beam optics of the beam deflection unit of a charged particle device.

[0138] The advantage of this lookup table is that it eliminates the need to model the dependency between the sensor output and the compensation signal using a predefined function, directly capturing nonlinear dependencies. On the other hand, this lookup table can be very large. This can lead to a delay in finding the appropriate compensation signal, which can be problematic, especially with rapidly changing disturbances.

[0139] In another instance, (pre-parameterized) functional dependencies are used to determine one or more compensation signals.

[0140] This type of functional dependence is described for the linear case. Linear functional dependence can be implemented using the proportional control module of the control unit (e.g., PI, PD, PID, or PT control module). For example, for a scalar physical quantity (e.g., temperature), this linear functional dependence can be defined as follows:

[0141] ,

[0142] In this article, This represents temperature disturbances (e.g., defined with respect to a reference temperature) and is derived from the sensor output. This indicates the x-component for offset compensation. This indicates the placement of the y-component for offset compensation, and This represents compensation for focus shift. Then, the linear (proportional) function dependency is determined by the parameters. These are given and determined during calibration (pre-parameterization). The placement offset defines one or more compensation signals.

[0143] For example, for vector physical quantities (such as electric fields), this linear functional dependence can be defined as follows:

[0144] ,

[0145] in It is a 3x3 matrix, where the matrix elements are determined during calibration. This represents the components of the disturbed electric field. Calculate these measurements. , , A linear combination. In the above scenario, known physical quantities (such as temperature, electric field, etc.) will affect beam offset. The effects of different physical quantities on beam offset can be superimposed. Linear or nonlinear combinations are considered. This can also be called a multiple-input multiple-output (MIMO) transfer function. In some scenarios, different physical quantities can be considered to be independent of each other, that is, the mixed effect between the effects of different physical quantities on beam offset can be ignored.

[0146] In some cases, it is necessary to consider the interactive dependencies between multiple perturbations related to different physical quantities. MIMO transfer functions can be considered.

[0147] For example, one instance is the cross-dependency between temperature and pressure, as described below:

[0148] ,

[0149] The 2x3 matrix It has non-zero, off-diagonal elements, defining the cross-dependency between pressure and temperature perturbations.

[0150] The above has revealed the dependence of linear functions, but it can also include nonlinear terms, such as quadratic and cubic terms.

[0151] Beyond the functional dependency illustrated above, another example uses a model to determine one or more compensation signals. For instance, a trained neural network or another machine learning algorithm, or typically a pre-trained algorithm, is used to determine compensation for positioning and focus shift. The trained neural network receives a vector as input, which includes sensor outputs from multiple sensors, such as temperature, pressure, multiple components of an electric field, multiple components of a magnetic field, etc. The neural network then outputs one or more compensation signals, or determines the beam shift of one or more compensation signals. This neural network is trained using ground-based real-world labels obtained during calibration mode; that is, the beam shift measured at step 6115 is combined with the input vector determined at step 6105 or step 6110.

[0152] This is an example of a data-driven model. In other instances, analytical models can also be used. For instance, changes in pressure have been shown to cause distortion of the beam optics column. This results in a displacement of the focus on a circle tilted relative to the sample stage surface, i.e., a displacement with x, y, and z components. Focus shifts in the +z or -z directions may occur. An analytical model is determined based on the example, which uses the pressure gradient to determine the torque applied to the optics column. For example, this analytical model has the advantage of reducing parameterization lead time compared to the verbose calibration of the transfer function. In some instances, this model can be extended to also cover placement offsets based on other perturbations, such as magnetic fields.

[0153] The above has revealed the scenario for instantaneous compensation of disturbances. Such techniques are generally applicable to slowly changing disturbances, such as those at or below kHz. For rapidly changing disturbances, higher accuracy can be achieved by considering the temporal resolution characteristics of the disturbance. This is explained further below.

[0154] Based on various examples, the predicted component of beam offset is determined based on the sensor outputs of multiple sensors, and one or more compensation signals are determined based on the predicted component of beam offset. In other words, a disturbance is expected within a certain look-ahead time.

[0155] This type of technology is based on the finding that certain perturbation events are repetitive. Specifically, location-specific perturbation events may recur over time. For example, stray magnetic fields might be caused by the movement of an office chair between two tables in a laboratory or at the deployment site of a charged particle beam device. Vibrations, for example, might be caused by trains entering or leaving a nearby train station, or delivery trucks arriving at or leaving a loading dock. In another instance, stray magnetic fields might be caused by the operation of equipment in a wafer fab, such as the opening or closing of loading locks, the decompression of a vacuum chamber, or temperature changes as a function of daylight / solar altitude. These are just some examples of typical recurring location-specific perturbation events.

[0156] To make this prediction, in some instances, the sensor output of at least one of multiple sensors includes the corresponding time-series data. In other words, sensor readings over a specific observation duration are considered (e.g., along with relative timestamps). The predictive component is then determined based on analysis of the time-series data.

[0157] Several options are available for performing this type of time series data analysis. One option involves finding finger-like patterns in the time series data representing one or more predetermined perturbation events. These finger-like patterns include characteristic temporal dependencies in the sensor outputs of at least one corresponding sensor. Figure 9 The explanation is as follows.

[0158] Figure 9 An illustrative example is used to illustrate the perturbation of the x-component of the electric field that affects the beam deflection of a charged particle beam over time. The time-series data 310 of the x-component of the electric field is obtained from the corresponding electric field sensor.

[0159] For example, a disturbance event 311 is illustrated, caused by a bus arriving at a bus stop near the deployment site of the charged particle beam device. The corresponding disturbance duration 313 is also illustrated here. For example, the disturbance duration 313 may be in the range of seconds or minutes.

[0160] Disturbance event 311 exhibits characteristic finger-like ripples 312 detected in the time-series data of the electric field sensor (in this context: a large rise followed by a small drop in the average value of the time-series data 310 preceding the disturbance event). Once these finger-like ripples 312 are identified, the future behavior of the disturbance can be predicted, i.e., the predicted component of the beam offset can be determined (under the assumption of the repetitive nature of the disturbance). Thus, the disturbance behavior during the remaining disturbance duration 313 can be predicted.

[0161] When operating during the calibration phase of step 6005 (see...) Figure 7 In some instances, the repository is filled with finger-like ripples representing multiple disturbance events. Several options are conceivable for locating these finger-like ripples. One option is to identify the repetition of the finger-like ripples. For example, during calibration mode, the sensor output of at least one corresponding sensor is monitored over an extended duration (e.g., hours, days, or even weeks), and the repetition of the finger-like ripples is then detected. In a further option, user input data indicating a corresponding event among one or more disturbance events is obtained. For example, referencing... Figure 9 The user labels / annotates time-series data to identify the duration of the disturbance 313. The user can do this using domain knowledge; for example, in the discussed example, the user knows that a bus has arrived at the bus stop. Another option involves training a predictive model to look for finger-like ripples based on time-series data measured during calibration mode. The predictive model (e.g., a recurrent neural network such as a Long Short-Term Memory (LSTM) neural network) is then enabled to determine the predicted component of the beam offset. This allows for a response to disturbance events with high-bandwidth signal components. In other words, disturbance events with rapid temporal dynamics, such as sub-millisecond or even microsecond disturbance events, can be compensated for. This is because a compensation signal can be proactively emitted once finger-like ripples are detected.

[0162] Figure 10 This is a flowchart of an exemplary method. Figure 10 Schematic display Figure 7 The operation in step 6010 of the operation phase.

[0163] At step 6205, multiple sensors of the charged particle beam apparatus measure multiple perturbations of multiple physical quantities, each physical quantity affecting the beam offset of the charged particle beam on the sample stage, such as placement offset and / or focus offset. Corresponding sensor outputs, including multiple sensor signals provided by the multiple sensors, are provided here. The sensor outputs indicate the values ​​of the physical quantities. That is, the sensor outputs are related to the perturbations. These perturbations may be superimposed or correlated with each other.

[0164] Typically, different placements of multiple sensors are conceivable. Exemplary placements will be combined later. Figure 12 and Figure 13 Let's have a discussion.

[0165] Next, at step 6210, one or more compensation signals are determined to counteract this beam offset. This is based on the sensor outputs of multiple sensors. More specifically, the disturbance is estimated from the sensor outputs and converted into one or more compensation signals.

[0166] One or more compensation signals can be used to control the beam deflection unit. For example, the beam deflection unit can be controlled to not deflect the beam during imaging or manipulation. Conversely, the deflection of the beam used for imaging or manipulating the sample can be achieved by a separate beam deflection unit.

[0167] The examples above have been shown to help identify such compensation signals, for example, using transfer functions that can be implemented through lookup tables, models (e.g., data-driven models using machine learning or analytics models), functional dependencies, machine learning algorithms / models (e.g., deep neural networks), etc. Training data can be obtained during the calibration phase.

[0168] It can also determine the predicted component of beam offset, thereby reducing waiting time and applying compensation signals to provide more accurate compensation.

[0169] In some contexts, as an alternative or additional step to determining a compensation signal to actively compensate for beam offset during operation of a charged particle beam device (e.g., in imaging or manipulation modes), metadata indicating one or more compensation operations is determined to counteract beam offset in the imaging data. This enables post-processing of the imaging data (see...). Figure 7 (Step 6015). In this document, when digitally post-processing imaging data acquired using a charged particle beam device, beam offset compensation is implemented; alternatively or additionally, at least one portion of the beam offset during the compensation operation is compensated.

[0170] The reliability of the corresponding image data can be determined. Log archives can be generated to store disturbances or specifically store one or more compensation signals. Log archive entries can be created based on schedules and / or event triggers and / or continuously. Multiple sensors can be used to detect vibrations and other disturbances (such as the aforementioned magnetic fields, acoustic effects, etc.) to record and / or display the current health status of the system. This health status can be permanently recorded (at fixed time intervals or when one or more thresholds are exceeded).

[0171] At step 6211, selectivity may be used to predict the operational accuracy of the charged particle beam device during the predicted duration, based on the sensor output and / or one or more compensation signals determined at step 6210. This is equivalent to predicting the degree of perturbation. For example, recurrent neural networks or LSTMs are used to make such predictions. Furthermore, this prediction may be based on the characteristic finger-like ripples of repetitive perturbation events, such as in combination with... Figure 9 The discussion is different from the combination. Figure 9 As explained, the prediction of this level of accuracy may not directly affect the compensation signal. Sometimes, the prediction may not accurately determine the predicted components of one or more compensation signals. In such cases, accuracy can still be predicted. In some instances, this accuracy is output to the user via the HMI. The user can then determine whether to abort the operation. In other instances, the accuracy prediction is used in the scenario of step 6215.

[0172] Sometimes, a disturbance occurs that exceeds or is expected to exceed (see step 6211) a predetermined threshold. If the disturbance exceeds the predetermined threshold, it is considered that the disturbance cannot be compensated.

[0173] Therefore, at step 6215, it is checked whether one or more predetermined events are detected in the sensor outputs of the multiple sensors. In some instances, these one or more predetermined events are associated with at least one of a plurality of disturbances exceeding a certain predetermined threshold; this corresponds to the sensor output exceeding the corresponding threshold. In a further instance, it is checked whether one or more compensation signals exceed a specific threshold. An alternative example of these one or more predetermined events is detecting anomalies in the sensor outputs. In some instances, an anomaly detector algorithm is used: examples include clustered anomaly detection or autoencoder neural networks. This anomaly detector algorithm can be trained in an unsupervised manner.

[0174] If no predetermined event is detected at step 6215, step 6205 is re-executed, i.e., the disturbance is measured again and a compensation signal is further applied. Conversely, if an excessive disturbance is detected at step 6215, the beam is blanked at step 6220. For example, the inspection or operating mode is aborted. Alternatively or additionally, a warning message is output via the HMI. In some instances, the corresponding sensor output that caused step 6220 to be executed is recorded. According to some instances, a safety mode that can be manually exited by the user is entered.

[0175] Beam blanking can be performed with relatively low latency to avoid damage to manipulated samples. For example, determining one or more compensation signals typically takes a significant amount of time, such as performing a lookup operation or calculating the compensation signals. Therefore, in some instances, beam blanking is performed with a lower latency than determining one or more compensation signals. After beam blanking is performed, any disturbance source can be resolved; and repair work can continue at a later point in time after the disturbance has been reduced.

[0176] Typically, according to some examples, the decision at step 6215 is based on sensor signals other than those considered in the logic at step 6210. For example, the following physical quantities have been found to be particularly suitable for detecting excessive disturbances at step 6215: acoustic vibration, vibration, ambient pressure, and changes in ambient pressure. On the other hand, the following physical quantities have been found to be particularly suitable for determining one or more compensation signals to counteract beam deflection: magnetic field, ambient temperature, ambient pressure, and changes in ambient pressure.

[0177] Figure 11 An exemplary embodiment of a charged particle beam device, such as the charged particle beam device 100 described above, is illustrated schematically. Figure 11 The scenario involves a charged particle beam repair device (or simply repair device). Figure 11 A schematic cross-sectional view of some key components of an example of a repair apparatus 11120 that can be used to identify and repair defects 11160 in a photomask (as an example of a repair object). A sample 11405 may be configured, for example, in the form of a photomask 11110 on a sample stage 11402 (corresponding to sample stage 113). The photomask may have one or more defects 11160 in the form of excess material (“dark defects”) and / or missing material (“bright defects”). Figure 11 Defects in the photolithographic mask cannot be reproduced. Defects, such as excess or missing material, or general defects, can be scanned and analyzed using a charged particle beam. Furthermore, defects can be corrected using a particle beam-induced process. For this purpose, the repair apparatus 11120 includes a scanning electron microscope (SEM) 11410. Additionally, defects with excess material can be repaired using the measuring tip of a scanning probe microscope 11480. Therefore, the repair apparatus 11120 includes one or more scanning probe microscopes 11480, typically in the form of an atomic force microscope (AFM) 11480.

[0178] exist Figure 11 In the SEM 11410, the electron gun implementing the beam source 11412 generates an electron beam 11415, wherein the imaging element (the beam deflection unit) is disposed in the electron column 11417, and the imaging element is not in Figure 11 As shown, a focused electron beam 11415 guides / deflects an electron beam onto a sample 11405 at position 11422, which (as explained) may contain a photomask. The sample 11405 is disposed on a sample stage 11402. The sample stage 11402 is also referred to in the art as a "stage". Figure 11 As indicated by the arrows, the positioning unit 11407 can move the sample stage 11402 about six axes relative to the column 11417 of the SEM 11410. The movement of the sample stage 11402 by the positioning unit 11407 can be achieved by, for example... Figure 11This is achieved using a micromanipulator not shown in the diagram.

[0179] At processing position 11422, particle beam 11415 strikes sample 11405. Therefore, positioning unit 11407, by means of the displacement of sample stage 11402 perpendicular to the beam axis of electron beam 11415, allows for the analysis of mask defects (inspection task) by generating an image of the defects. For this purpose, the imaging element of column 11417 of SEM 11410 can scan electron beam 11415 on sample 11405. The tilting and / or rotation of the sixth axis sample stage 11402 allows for the inspection of one or more defects from different angles or viewpoints. The corresponding positions of the various axes of sample stage 11402 can be measured by interferometry. Figure 11 (Not reproduced in the original text). The positioning unit 11407 is controlled by signals from the control unit 11425. The control unit 11425 may be part of the computer system 11430 of the repair device 11120. In some instances, the control unit 11425 implements the control unit 119 or the control unit 130 (see [link to original text]). Figure 6 ).

[0180] The repair device 11120 may further include one or more sensors that enable it to characterize the current state of the SEM 410 and the processing environment (e.g., a vacuum environment) using the SEM 11410. For example, vibration, temperature, pressure, and their respective differences or rates of change (over time) may be measured.

[0181] Furthermore, the electron beam 11415 can also be used to induce particle beam-induced processing to correct identified defects, such as removing dark defects in electron beam-induced etching (EBIE) and / or correcting bright defects in electron beam-induced deposition (EBID). Additionally, in Figure 11 In the repair device 11120, the electron beam 11415 can be used to analyze the repair position of the mask.

[0182] Electrons backscattered from electron beam 11415 by sample 11405 and secondary electrons generated by electron beam 11415 within sample 11405 are recorded by detector 11420. If sample 11405 contains a photomask, detector 11420 identifies secondary electrons emitted during scanning of absorber strips disposed on the mask for photolithography. Detector 11420 disposed in electron column 11417 is referred to as a “lens detector.” In various embodiments, detector 11420 may be mounted in column 11417. Detector 11420 may also be used to detect electrons backscattered from one or more defects 11160 of mask 11110. Detector 11420 is controlled by control unit 11425 of computer system 11430 of device 120. For example, computer system 11430 may implement control unit 130. Embedded control unit 119 may be implemented by control unit 11425.

[0183] The repair device 11120 may include a second detector 11445. The second detector 11445 is designed to detect electromagnetic radiation, particularly in the X-ray region. Therefore, the second detector 11445 enables analysis of the material composition of the sample, such as the photomask (i.e., its substrate), absorber strips, and / or one or more defects. The detector 11445 is also controlled by the control unit 11425.

[0184] The control unit 11425 of the computer system 430 (which may also be detached from the computer system 430) can set the parameters of the electron beam 11415 to induce a deposition process for removing visible defects and / or an EBIE process for etching dark defects.

[0185] Furthermore, the computer system 11430 includes an evaluation unit 11435. The evaluation unit 11435 receives measurement data from detectors(s) 11420 and 11445. Based on the measurement data, such as secondary electron contrast data, the evaluation unit 11435 generates an image displayed on a monitor 11432 in grayscale or grayscale value representation. Additionally, the computer system 11430 includes an interface 11437 through which it can transmit data to another processing device. Furthermore, the computer system 11430 of the repair device 11120 can receive one or more processed or evaluated images and / or one or more superimposed images from the evaluation device.

[0186] As explained above, the modified electron beam 11415 of SEM 11410 can be used to induce electron beam-induced processing / manipulation. Similarly, as explained above, defects in sample 11405 can be corrected through electron beam-induced manipulation. To perform these processes, Figure 11The exemplary scanning electron microscope 11410 of the repair device 11120 has three different supply containers 11450, 11460 and 11470.

[0187] The first supply container 11450 stores a first precursor gas in the form of a deposition gas, such as a metal carbonyl, like chromium hexacarbonyl (Cr(CO)6), or a carbon-containing precursor gas, such as pyrene. Using the precursor gas stored in the first supply container 11450, material can be deposited on the sample 11405 or mask in a localized chemical reaction, wherein the electron beam 11415 of the SEM 11410 acts as an energy supplier to convert the precursor gas stored in the first supply container 11450, preferably at the intended deposition site of the material (i.e., at the site of obvious defects), into chromium atoms and carbon monoxide molecules. This means that by combining the supply of the electron beam 11415 and the precursor gas, an EBID process for correcting mask defects can be performed. The modified SEM 11410, combined with the first supply container 11450 or the deposition gas stored therein, forms a repair device 11120.

[0188] exist Figure 11 In the illustrated repair apparatus 11120, a second supply container 11460 stores a precursor gas in the form of an etching gas, which enables the performance of a localized electron beam induced etching (EBIE) process. Here, the EBIE process can be used to remove defects or dark defects of excess material from the photomask 11110 (or another sample, such as a semiconductor wafer). The precursor gas in the form of an etching gas may include, for example, xenon difluoride (XeF2), chlorine (Cl2), oxygen (O2), ozone (O3), water vapor (H2O), hydrogen peroxide (H2O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), nitric acid (HNO3), ammonia (NH3), or sulfur hexafluoride (SF6), or combinations thereof. Therefore, the modified SEM 11410, combined with the second supply container 11460 or the precursor gas stored therein, forms the repair apparatus 11120.

[0189] The additive gas can be stored in a third supply container 11470, which can be added, if necessary, to the etching gas 920 kept available in a second supply container 11460, or to the deposition gas stored in a first supply container 11450. Alternatively, the third supply container 11470 can store a precursor gas in the form of a second etching gas or a second deposition gas.

[0190] exist Figure 11In the illustrated scanning electron microscope 11410, each supply container 11450, 11460, and 11470 has its own control valves 11452, 11462, and 11472 to monitor or control the amount of the corresponding gas supplied per unit time, i.e., the gas volumetric flow rate at the incident position 11422 of the electron beam 11415 on the sample 11405. Control valves 11452, 11462, and 11472 are controlled and monitored by control unit 11425. This device allows the partial pressure conditions of one or more gases supplied at processing position 11422 to be set during operation (see [reference]). Figure 7 Step 6010) performs EBID and / or EBIE processing within a wide range.

[0191] In addition, Figure 11 In the exemplary SEM 11410, each supply container 11450, 11460 and 11470 has its own gas feed system 11454, 11464 and 11474, the ends of which are nozzles 11456, 11466 and 11476 located near the incident point of the electron beam 11415 on the sample 11405 (i.e., the processing position 11422).

[0192] Supply containers 11450, 11460, and 11470 may have their own temperature setting and / or control elements, which allow for cooling and heating of the corresponding supply containers 11450, 11460, and 11470. This allows for the storage, and in particular the supply of, precursor gases for deposition and / or etching gases at their respective optimal temperatures. Figure 11 (Not shown in the image). Control unit 11425 can control the temperature setting elements and temperature control elements of supply containers 11450, 11460 and 11470. During EBID and EBIE processing, the temperature setting elements of supply containers 11450, 11460 and 11470 can be further used to set the vapor pressure of the processing gas stored therein by appropriate temperature selection.

[0193] Apparatus 11400 may include one or more supply containers 740 for storing precursor gases for two or more deposition gases. Furthermore, apparatus 400 may include one or more supply containers 11460 for storing precursor gases for two or more etching gases.

[0194] Figure 11 The scanning electron microscope 11410 illustrated herein can operate in an atmospheric environment or within a vacuum chamber 11442. Performing EBID and EBIE processing requires a negative pressure relative to ambient pressure within the vacuum chamber 11442. For this purpose, Figure 11The SEM11410 includes a pump system 11444 for generating and maintaining the required negative pressure in the vacuum chamber 11442. A pressure <10⁻⁶ is achieved in the vacuum chamber 11442 using shut-off control valves 11452, 11462, and 11472. -4 The residual gas pressure is Pa. Pump system 11444 may include a separate pump system ( Figure 11 (Not shown in the image), used for the upper half of vacuum chamber 11442 to provide the electron beam 11415 for SEM 11410; and for the lower half or reaction chamber 11448. Pressure sensors may be provided to monitor the pressure inside and outside vacuum chamber 11442. This allows for pressure differential monitoring.

[0195] Figure 11 The SEM 11410 presented by the repair device 11120 has a single electron beam 11415. However, the SEM 11410 may also have a second particle beam source. The second particle beam may include a photon beam and / or an ion beam ( Figure 11 (Not shown in the image). Furthermore, the SEM 11410 may have two or more electron beams 11415 to enable the parallel execution of two or more particle beam induced processing procedures, or two or more analytical processing procedures for two or more defects.

[0196] Additionally, Figure 11 The exemplary repair apparatus 11120 illustrated includes a scanning probe microscope 11480, which is implemented in the repair apparatus 11120 in the form of a scanning force microscope (SFM) 11480 or an atomic force microscope (AFM) 11480. The scanning probe microscope 11480 can be used to scan one or more defects 11160 of the sample 11405 or the photomask 11110. Furthermore, the scanning probe microscope 11480 can be used to repair defects with excess material. For this purpose, the scanning probe microscope 11480 may include a first measuring tip for analyzing the sample 11405 and a second measuring tip for treating one or more defects.

[0197] Only the measuring head 11485 of the scanning probe microscope 11480 is present. Figure 11 The repair device 11120 is shown. Figure 11 In one example, the measuring head 11485 includes a fixing device 11487. The measuring head 11485 is secured by the fixing device 11487 ( Figure 11 (Not shown) is fixed to the frame of the repair device 11120. This allows the free end of the piezoelectric actuator 11490 to move in three spatial directions ( Figure 11A piezoelectric actuator (not shown) is attached to a fixing device 11487 of a measuring head 11485. A probe 11492, containing a cantilever 11494 or lever arm 11494 and a measuring tip 11495, is fixed to the free end of the piezoelectric actuator 11490. The free end of the cantilever 11494 of the probe 11492 has a measuring tip 11495.

[0198] Next, combined Figure 12 and Figure 13 This will reveal options for positioning sensor 800, which can be used to measure disturbances in physical quantities, each affecting the beam offset of beam 11415 of repair device 11120. If compared to Figure 11 and Figure 12 and Figure 13 The repair device 11120 is only schematically illustrated at a higher level of abstraction. Besides... Figure 11 In addition to what is revealed in the text, Figure 12 and Figure 13 Also disclosed is a beam blanker 11801 that can be used for blanking beam 11415, as well as an aperture 11802 and electrical coils 11803 and 11804 for deflecting the beam (i.e., optical devices forming beam deflection unit 112).

[0199] exist Figure 12 In this case, sensor 800 is positioned outside the vacuum chamber 11442 of the repair device 11120. Figure 13 In this case, sensor 800 is disposed inside vacuum chamber 11442 of repair device 11120. Combinations are possible, that is, some sensors may be disposed inside vacuum chamber, while others may be disposed outside vacuum chamber.

[0200] Figure 14 and Figure 15 The repair apparatus 11120 shown in the aforementioned diagram illustrates that high-precision mask repair operations can be achieved. Figure 14 In the first step shown, the mask defect 1471.1 in the absorber line 1453 on the substrate layer 1451 of the mask is determined with high precision. Using an inspection mode, the precise extent of the defect 1471.1 is determined, including at least the tilt angle 1473.1 of the defect 1471.1. The location, deviation from the target range 1475 of the edge location, and the extent of the defect can be determined with an accuracy of less than 1 nm, preferably even less than 0.5 nm. The amount of missing material to be deposited in the repair operation can be determined with high precision. In the repair step (manipulation mode), material from a precursor gas supplied by a gas supply device is deposited using, for example, a low-energy electron beam, and the defect 1471.1 is filled using, for example, chromium to form the repaired defect 1477. This is in Figure 15The process is explained below. Then, the performance of the repair operation is verified using the equipment in inspection mode. This allows for high-precision acquisition of the edge position of the obtained line 1453 and the tilt angle 1473.2 of the line edge. Therefore, it can be considered that the repair operation performs very well within the mask specifications, including the stringent requirements for EUV masks with edge positions below 0.5 nm or even smaller. The repair and verification steps can also be repeated. This operation is not limited to missing material in the mask layer, but can also be applied to removing excess material from the mask layer. Furthermore, the manipulation is not limited to mask repair, but also to circuit repair operations on the processed wafer. In both examples, layer material is removed by electron beam induced etching, or layer material is deposited by electron beam induced deposition, and high-precision processing endpoints are required.

[0201] Figure 16 An exemplary embodiment of a charged particle beam device, such as the charged particle beam device 100 described above, is illustrated schematically.

[0202] Figure 16The charged particle device 161001 described herein is a low-energy corrected electron microscope with reduced aberrations, as described in German patent application DE 10 2019 214 936 filed on September 27, 2019, which is incorporated herein by reference. Typically, low-energy corrected electron microscopes include correction elements for chromatic aberration (CC), spherical aberration (CS), and selective field curvature (FC). The low-energy corrected single-beam charged particle microscope 161001 includes a small beam generator 161301 for generating a single primary charged particle small beam 161003, and an object illumination unit 161100 for illuminating an image subfield on the surface of a sample 11110 (e.g., a photolithographic mask or a semiconductor wafer including a semiconductor structure) disposed within an object plane 16101, thus generating a secondary electron small beam 161009 emitted from the focal point 161605 of the primary small beam 161003 within the image subfield during use. The subfield typically has a lateral extension of at least 5 μm, preferably 8 μm, 12 μm or more. The object illumination unit 161100 further includes first to third electrostatic or magnetic lenses 161403, 161405 and 161407 and an objective lens 161102. The charged particle microscope 161001 further includes a detection unit 161200 for acquiring digital images of the image subfield on the sample surface during use. The detection unit 161200 includes an electronic sensor 161207 and multiple optional electrostatic or electromagnetic deflection elements 161205. The charged particle microscope 161001 further includes an electromagnetic beam splitting system 161400 for guiding a primary small beam 161003 along a primary beam path (solid line 161013) and guiding a secondary small beam 161009 along a secondary beam path (dashed line 161011). The secondary small beam 161009, focused by objective lens 161102, propagates relative to the primary small beam 161003, and is therefore separated from the primary small beam 161003 by magnetic beam splitting system 161400. The charged particle microscope 161001 further includes a long-path grating scanner 161110. The grating scanner 161110 (forming a beam deflection unit) includes at least one first set of deflection electrodes 161111. The charged particle microscope 161001 further includes a control unit 16800 (implementing control unit 119 or control unit 130). The charged particle microscope 161001 further includes at least one first corrector 161601 for correcting the primary charged particle small beam 161003. The charged particle system 161001 further includes a correction system 161052 having a second optical axis 161050 forming an angle with optical axis 16105. The beam splitter system 161400 guides a primary beam along the direction of the second optical axis 161050 to the correction system 161052. The correction system includes an electrostatic mirror 161414, which reflects the primary beam back to the beam splitter system 161400.In one example, a second corrector 161602 is configured in the correction system 161052 and has a correction electrode 161612. Using a low-energy corrected single-beam charged particle microscope 161001, electron imaging with kinetic energies below 400 eV, preferably below 300 eV, even more preferably below 200 eV, or even more preferably below 150 eV can be performed, and high resolution below 2 nm, preferably below 1.5 nm, or even more preferably below 1 nm can be achieved by utilizing the correction device of a low-impact primary electron microscope and a low-energy electron microscope.

[0203] The charged particle beam was repositioned in the vacuum chamber. Figure 16 (Not shown). The sensor can be configured inside and / or outside the vacuum chamber, as previously combined. Figure 14 and Figure 15 The discussion.

[0204] Figure 17 An exemplary charged particle beam device 20000 is shown. The charged particle beam device 20000 corresponds to... Figure 6 The charged particle beam device 100 is shown. For example, the charged particle beam device 20000 can be a charged particle beam repair device.

[0205] The figure shows optical column 20101 (including beam source, beam deflection unit, detector, etc.) and mask 20099 currently being repaired. Laser interferometric stage 20003, providing multiple degrees of freedom such as lateral translation and rotation, is also shown. An additional beam deflection unit 20102 is also illustrated, provided here as an external modification to optical column 20101. Beam deflection unit 20102 can be an electrostatic or magnetic beam deflection unit. Active damping system 20200 is also shown.

[0206] Therefore, the charged particle beam device 20000 includes two beam deflection units: a first beam deflection unit located in the optical column 20101 and a second beam deflection unit 20102 attached thereto. The two beam deflection units may handle different tasks. The first beam deflection unit can deflect the beam according to imaging or manipulation. Typically, an electrostatic beam deflection unit is used for imaging, while a magnetic beam deflection unit is used for manipulation. That is, the corresponding control signals can be predefined before the imaging or manipulation operation begins. The second deflection unit 20102 can be controlled to compensate for disturbances.

[0207] For example, a combination of electrostatic and magnetostatic beam deflection units can be used. Furthermore, a control unit 20501 configurable for real-time signal processing is also shown. The control unit 20501 is configured to acquire multiple sensor signals from multiple 3-axis accelerometer sensors 20001, 20002. These 3-axis accelerometer sensors 20001, 20002 can be positioned outside a vacuum chamber where the optical column 20101 is configured. Sensor signals (e.g., including the position of the damping system, the velocity of the damping system, or other signals) can be selectively acquired from the laser interferometer stage 20003 and / or the damping system 20200.

[0208] Based on these multi-sensor signals, compensation signals can then be determined, for example, using machine-trained transfer functions or transfer functions with specified proportional dependence and / or MIMO transfer functions.

[0209] The compensation signal 165 is then provided to the beam deflection unit 20102. The control unit 20501 also provides a control signal 166 to the optical column 20101, thereby controlling the beam deflection unit and the optical column 20101 to perform imaging and / or manipulation operations, i.e., to perform electron beam induced manipulation on a sample such as a mask.

[0210] Another example is a graphical user interface 20502, implemented, for example on a display. It can output current information determined based on the outputs of one or more sensors, such as health information of a charged particle beam device 2000.

[0211] A further example is the data storage device 20503. A log file, which can be maintained and updated based on sensor output, is stored in the data storage device 20503. For example, such a log file can be updated periodically. Event-triggered updates to the log file can be performed. For example, the log file can indicate one or more disturbance amplitudes determined based on sensor output. Detected vibration intensities can be stored in the log file.

[0212] In summary, techniques have been disclosed that facilitate compensation for multiple perturbations caused by various physical quantities affecting the beam offset of a charged particle beam apparatus. This compensation is performed during imaging or manipulation modes, for example, for mask repair or circuitry addition. In particular, this compensation is possible when the perturbation / beam offset is within a predetermined range. Additionally, if the perturbation cannot be compensated, the imaging or manipulation mode is stopped, for example, by blanking the beam and / or by shutting off the precursor gas supply valve. A warning is output according to the example. Once the perturbation is resolved, operation restarts at the point where the stoppage occurred. Using the techniques disclosed herein, the quality of imaging or manipulation tasks can be improved. The risk of damaging expensive lithography masks or semiconductor devices subjected to operation can be reduced.

[0213] One disclosed active system can detect disturbance signals (e.g., mechanical, acoustic, and electromagnetic disturbance signals) via a real-time computer (and / or an FPGA-based controller), determine one or more compensation signals, and use the beam deflection unit to adjust the electron beam during the correction phase.

[0214] Furthermore, techniques have been revealed that facilitate the use of sensor outputs from multiple sensors to predict the future behavior of charged particle beam devices. For example, sensor outputs can be stored in a data repository, and multiple time series can be correlated with each other. Correlation can then be discovered, and recurring finger-like patterns can be identified. This can be used to predict the future behavior of charged particle beam devices. Predictive maintenance information can be determined, for example, by using microphones to acquire acoustic spectra and / or acoustic noise pressures; for instance, a continuously increasing noise level at certain frequencies in the acoustic spectrum can be detected, indicating a failure of one or more components of the charged particle beam device, such as a pump. Understanding the vibration state (or the effects of external disturbances such as magnetic fields and acoustics) at a specific timestamp is crucial for improving service activities and subsequent troubleshooting. Such information can be provided as part of predictive maintenance information, or more generally, as a log archive determined based on sensor outputs. Continuous or event-triggered log entries can build a database to predict possible future service events (predictive maintenance).

[0215] In various examples, machine learning algorithms such as deep neural networks are used to analyze sensor output. Training can be repeated periodically based on training data acquired during calibration. In this way, accuracy can be continuously improved. Furthermore, location-specific training can be performed based on location-specific calibration.

[0216] In summary, at least the various instances defined by the following terms have been revealed.

[0217] Clause 1: A charged particle beam device includes a beam source, at least one beam deflection unit, and a sample stage, the at least one beam deflection unit being configured to deflect a charged particle beam originating from the beam source to position the beam on the sample stage, the charged particle beam device comprising:

[0218] - One or more sensors configured to measure one or more disturbances to one or more physical quantities, each physical quantity affecting the beam offset of the sample stage.

[0219] - At least one control unit configured to determine one or more compensation signals to counteract the beam offset based on the sensor outputs of the one or more sensors.

[0220] The at least one control unit is configured to provide one or more compensation signals to at least one of the beam source, the at least one beam deflection unit, the sample stage, or one or more compensator modules.

[0221] Clause 2: Charged particle beam devices as described in Clause 1,

[0222] The at least one control unit is configured to determine a predicted component of the beam offset based on the sensor outputs of the one or more sensors, and to determine the one or more compensation signals based on the predicted component of the beam offset.

[0223] Clause 3: Charged particle beam devices as described in Clause 2,

[0224] The sensor output of at least one of the one or more sensors includes its respective time series data.

[0225] The at least one control unit is configured to determine the predictive component based on the time-series data output from at least one of the one or more sensors.

[0226] Clause 4: Charged particle beam devices as described in Clause 3,

[0227] The analysis of the time series data includes finding finger-like ripples of one or more predetermined perturbation events in the time series data, and / or applying a recurrent neural network, such as a long short-term memory network.

[0228] Clause 5: Charged particle beam devices as described in Clause 4,

[0229] The at least one control unit is configured to selectively initiate the calibration phase.

[0230] When operating during the calibration phase, the at least one control unit is configured to fill a storage library with the finger patterns of the one or more disturbance events, for example, based on identifying the corresponding repetition of the finger patterns in the time series or acquiring at least one of user input data indicating the corresponding one of the one or more disturbance events.

[0231] Clause 6: Charged particle beam devices as described in Clause 4 or 5,

[0232] The at least one control unit is configured to selectively initiate the calibration phase.

[0233] When operating during the calibration phase, the at least one control unit is configured to train a prediction model based on the time-series data measured during the calibration phase to find the finger ripples and thereby enable the prediction model to determine the prediction component.

[0234] Clause 7: Charged particle beam device as described in any of the preceding clauses,

[0235] The at least one control unit is further configured to predict the operational accuracy of the charged particle beam device during the predicted duration based on the sensor output or at least one of the one or more compensation signals.

[0236] Clause 8: Charged particle beam devices as described in Clause 7,

[0237] The at least one control unit is further configured to selectively terminate the operation of the charged particle beam device based on the accuracy of the operation, for example by blanking the beam.

[0238] Clause 9: The charged particle beam device as described in any of the preceding clauses,

[0239] The one or more disturbances contain multiple disturbances.

[0240] The at least one control unit is configured to determine the one or more compensation signals based on the interactive dependence among the plurality of disturbances.

[0241] Clause 10: Charged particle beam devices as described in Clause 9,

[0242] The at least one control unit is configured to determine the one or more compensation signals based on the interactive dependence between temperature-induced disturbances and pressure-induced disturbances.

[0243] Clause 11: The charged particle beam device as described in any of the preceding clauses,

[0244] The at least one control unit is configured to determine the one or more compensation signals based on a pre-trained algorithm.

[0245] Clause 12: Charged particle beam devices as described in Clause 11,

[0246] The pre-training algorithm includes deep neural networks, such as convolutional neural networks.

[0247] Clause 13: Charged particle beam devices as described in Clause 11,

[0248] The pre-training algorithm includes machine learning algorithms.

[0249] Clause 14: Charged particle beam device as described in any of the preceding clauses,

[0250] The at least one control unit is configured to determine the one or more compensation signals based on pre-parameterized functional dependencies.

[0251] Clause 15: The charged particle beam device as described in any of the preceding clauses,

[0252] The at least one control unit is configured to use a lookup table that links the sensor output to the one or more compensation signals to determine the one or more compensation signals.

[0253] Clause 16: Charged particle beam devices as described in Clause 15,

[0254] The lookup table is retrieved from a device-specific repository associated with the charged particle beam device.

[0255] Clause 17: Charged particle beam devices as described in Clause 15,

[0256] The lookup table is retrieved from a cloud-based repository associated with multiple charged particle beam devices.

[0257] Clause 18: The charged particle beam device as described in any of the preceding clauses,

[0258] The plurality of physical quantities are selected from the group consisting of: acoustic vibration, vibration, pressure, humidity, temperature, laminar airflow, turbulent airflow, differential components, rate of change of physical quantities, vector, and scalar.

[0259] Clause 19: Charged particle beam device as described in any of the preceding clauses,

[0260] The one or more sensors include at least one sensor for measuring the temperature or pressure of the coolant.

[0261] Clause 20: Charged particle beam device as described in any of the preceding clauses,

[0262] At least one of the one or more sensors is configured in a vacuum chamber of the charged particle beam repair apparatus.

[0263] Clause 21: The charged particle beam device as described in any of the preceding clauses,

[0264] At least one of the one or more sensors is configured outside a vacuum chamber of the charged particle beam repair device.

[0265] Clause 22: Charged particle beam device as described in any of the preceding clauses,

[0266] The one or more sensors include at least one sensor for measuring the pressure difference or temperature difference between two or more parts of the charged particle beam repair device.

[0267] Clause 23: Charged particle beam device as described in any of the preceding clauses,

[0268] The one or more disturbances are selected from the group consisting of: direct disturbances that affect the beam deflection by deflecting the beam; and indirect disturbances that affect the beam deflection by impacting one or more parts of the charged particle beam device.

[0269] Clause 24: Charged particle beam device as described in any of the preceding clauses,

[0270] The beam offset includes at least one of the beam placement offset or focus offset.

[0271] Clause 25: Charged particle beam device as described in any of the preceding clauses,

[0272] The at least one control unit is configured to monitor the sensor output of at least one of the one or more sensors or the sensor output of at least one other sensor, and to selectively blank the beam based on the monitoring.

[0273] Clause 26: Charged particle beam devices as described in Clause 25,

[0274] In this case, compared to determining one or more compensation signals, the at least one control unit is configured to selectively blank the beam with a lower waiting time.

[0275] Clause 27: Charged particle beam device as described in any of the preceding clauses,

[0276] The at least one control unit is configured to provide one or more compensation signals by operating the charged particle beam device in a manipulation mode such as an electron beam induced etching or deposition mode, the manipulation mode including repairing or patching semiconductor devices on a wafer mounted on the sample stage.

[0277] Clause 28: Charged particle beam device as described in any of the preceding clauses,

[0278] The charged particle beam device is a charged particle beam repair device.

[0279] Clause 29: Charged particle beam device as described in any of the preceding clauses,

[0280] The charged particle is an electron or an ion, such as a helium ion or a neon ion.

[0281] Clause 30: Charged particle beam device as described in any of the preceding clauses,

[0282] The charged particle beam device is a combination of a focused ion beam and an electron microscope interactive beam.

[0283] Clause 31: The charged particle beam device as described in any of the preceding clauses,

[0284] The charged particle beam device is a charged particle beam repair device.

[0285] The charged particle beam repair device further includes a precursor gas source.

[0286] The at least one control unit is configured to provide control signals to the beam source, the at least one beam deflection unit, and the precursor gas source to perform electron beam-induced manipulation of the sample mounted on the sample stage.

[0287] The at least one control unit is configured to provide one or more compensation signals during the electron beam-induced manipulation.

[0288] Clause 32: Charged particle beam device as described in any of the preceding clauses,

[0289] The at least one control unit is configured to provide one or more compensation signals when the charged particle beam device is operating in an imaging mode, the imaging mode including the imaging structure of the sample mounted on the sample stage.

[0290] Clause 33: Charged particle beam device as described in any of the preceding clauses,

[0291] The at least one control unit determines the one or more compensation signals based on the linear or nonlinear dependence of the sensor output by the one or more compensation signals.

[0292] Clause 34: Charged particle beam device as described in any of the preceding clauses,

[0293] The one or more disturbances contain multiple disturbances.

[0294] The one or more physical quantities include multiple physical quantities.

[0295] Clause 35: Charged particle beam device as described in any of the preceding clauses,

[0296] The one or more compensator modules are selected from the group consisting of: external coils (i.e., outside the vacuum chamber or housing of the charged particle beam device) for applying a magnetic field; external electric field plates for applying an electric field; Helmholtz coil pairs; active cooling or heating elements; active damping elements; and pressure control elements, such as pumps.

[0297] Clause 36: A charged particle beam device comprising a beam source, at least one beam deflection unit, and a sample stage, the at least one beam deflection unit being configured to deflect a beam originating from the beam source to position the beam on the sample stage, the charged particle beam device comprising:

[0298] - One or more sensors configured to measure one or more disturbances to one or more physical quantities, each physical quantity affecting the beam offset of the sample stage; and

[0299] - At least one control unit configured to determine, based on the sensor output of the one or more sensors, metadata indicating one or more compensation operations to counteract beam offset in imaging data acquired by the charged particle beam device operating in imaging mode, and to store the metadata in association with the image data.

[0300] Clause 37: Charged particle beam devices as described in Clause 36,

[0301] The one or more compensation operations are selected from the group including: image shift; rotation; tilt; contrast enhancement; blur reduction.

[0302] Clause 38: A method comprising:

[0303] - Monitor the physical quantities that cause disturbances to the beam of the charged particle beam device.

[0304] - Based on this monitoring, compensate for the disturbance.

[0305] Clause 39: As described in Clause 38,

[0306] The compensation for the disturbance includes an electro-optical device that applies voltage or current to at least one beam deflection unit of the charged particle beam device to move the beam in the opposite direction to the beam deflection caused by the disturbance.

[0307] Clause 40: As described in Clauses 38 or 39,

[0308] The compensation or reduction of disturbance includes moving the sample stage of the charged particle beam device in the direction of the beam deflection caused by the disturbance.

[0309] Clause 41: The method as described in any one of Clauses 38 to 40,

[0310] The time delay between the monitoring and the compensation or reduction is less than 50 milliseconds, the selectivity is less than 500 milliseconds, and the further selectivity is less than 5 seconds.

[0311] Clause 42: The method as described in any one of Clauses 38 to 41,

[0312] The compensation or reduction is performed when the charged particle beam device is operated in a manipulation mode, which includes electron beam-induced etching or deposition of material from or onto a wafer mask.

[0313] Clause 43: The method as described in any one of Clauses 38 to 42 further includes:

[0314] Based on this monitoring, the operation of the charged particle beam device is selectively suspended.

[0315] Clause 44: As described in Clause 43,

[0316] The selective termination of the operation of the charged particle beam device includes blanking the beam.

[0317] Clause 45: The method described in Clause 43 or 44 further comprises:

[0318] Based on this monitoring, a choice is made between performing the disturbance compensation and performing the abort operation.

[0319] Clause 46: A method for manipulating or imaging a sample mounted on a sample stage of a charged particle beam apparatus, the charged particle beam apparatus comprising a beam source, at least one beam deflection unit, and the sample stage, the at least one beam deflection unit being configured to deflect a beam of charged particles originating from the beam source to position the beam on the sample stage.

[0320] This method includes:

[0321] - Obtain the sensor outputs of one or more sensors of the charged particle beam device, which measure one or more disturbances of one or more physical quantities, each of which affects the beam offset of the beam on the sample stage.

[0322] - Based on the output of the one or more sensors, determine one or more compensation signals to counteract the beam offset.

[0323] - Provide one or more compensation signals to at least one of the beam source, the at least one beam deflection unit, the sample stage, or one or more compensator modules.

[0324] Clause 47: The method as described in Clause 46, wherein the method is performed by the control unit of the charged particle beam device as described in Clause 1.

[0325] Clause 48: A method for post-processing image data acquired by a charged particle beam device, the charged particle beam device comprising a beam source, at least one beam deflection unit, and a sample stage, the at least one beam deflection unit being configured to deflect a charged particle beam originating from the beam source to position the beam on the sample stage.

[0326] This method includes:

[0327] - Sensor outputs are obtained from one or more sensors of the charged particle beam device, which measure one or more perturbations of one or more physical quantities, each of which affects the beam offset on the sample stage.

[0328] - Based on the sensor outputs of the one or more sensors, determine metadata indicating one or more compensation operations to counteract beam offset in imaging data acquired by the charged particle beam repair device operating in imaging mode; and

[0329] - Based on the metadata and according to one or more compensation operations, the image data is post-processed.

[0330] Clause 49: The method as described in Clause 48, wherein the method is performed at least in part by the control unit of the charged particle beam device as described in Clause 36.

[0331] Furthermore, further examples, as defined in the cases listed below, are also disclosed. These further examples can be combined with the examples disclosed above to form further examples.

[0332] Case 1: A charged particle beam repair device (100, 11120, 11410, 161001, 20000), comprising a beam source (111, 11412), at least one beam deflection unit (112, 11417, 20102), a precursor gas source (11456, 11466, 11476, 11450, 11460, 11470, 11452, 11462, 11472), and a sample stage (114, 11402, 20100). 003), the at least one of the beam deflection units (112, 11417, 20102) is configured to deflect a beam (90, 91, 92, 93, 94, 95, 11415, 161003, 161009) of a plurality of charged particles originating from the beam source, so as to position the beam on the sample stage (113, 11402, 20003), the charged particle beam repair device (100, 11120, 11410, 161001, 20000) includes:

[0333] Multiple sensors (121, 122, 800) are configured to measure multiple disturbances of multiple physical quantities, each of which affects the beam offset (71, 72, 81) of the beam (90, 91, 92, 93, 94, 95) on the sample stage (114, 11402, 20003).

[0334] At least one control unit (119, 130, 11425, 16800, 20501) is configured to determine one or more compensation signals (165) to counteract the beam deflection (71, 72, 81) based on the sensor outputs (161, 162) of the plurality of sensors (121, 122, 800).

[0335] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide control signals (166) to the beam source (111, 11412), the at least one beam deflection unit (112, 11417, 20102), and the precursor gas source (11456, 11466, 11476, 11450, 11460, 11470, 11452, 11462, 11472) to perform electron beam-induced manipulation of the samples (11110, 20099) mounted on the sample stage (113, 11402, 20003).

[0336] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide one or more compensation signals (165) to at least one of the beam source (111, 11412), the at least one beam deflection unit (112, 11417, 20102), the sample stage (114, 11402, 20003), or one or more compensator modules during the electron beam induced manipulation.

[0337] Case 2: Charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in Case 1.

[0338] One of the plurality of sensors is selected from the group comprising: one or more laser interferometers; one or more linear encoders; one or more accelerometers; one or more acoustic sensors; one or more sensors configured to sense one or more components of a magnetic field; one or more sensors configured to sense one or more components of an electric field; one or more sensors configured to provide a signal synchronized with the AC main voltage; one or more multi-axis accelerometers; and one or more actuators of an active damping system.

[0339] Case 3: Charged particle beam repair device as described in Case 1 or 2,

[0340] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to determine the one or more compensation signals based on a predefined multiple-input multiple-output transfer function.

[0341] Case 4: A charged particle beam repair device as described in any of the preceding cases.

[0342] The at least one control unit (119, 130, 11425, 16800, 20501) includes a proportional control module configured to determine the one or more compensation signals.

[0343] Case 5: Charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding cases.

[0344] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to determine the one or more compensation signals based on a machine learning algorithm.

[0345] Case 6: Charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding cases.

[0346] The at least one beam deflection unit (112, 11417, 20102) includes a first beam deflection unit and a second beam deflection unit.

[0347] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide the control signal (166) to the second beam deflection unit to implement the electron beam-induced manipulation of the sample.

[0348] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide one or more compensation signals (165) to the first beam deflection unit.

[0349] Case 7: Charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in Case 6.

[0350] The second beam deflection unit is an electrostatic beam deflection unit.

[0351] The first beam deflection unit is a static magnetic beam offset unit.

[0352] Case 8: Charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in Case 6 or 7.

[0353] The second beam deflection unit has a higher operating bandwidth than the first beam deflection unit.

[0354] Case 9: Charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding cases.

[0355] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to maintain a log archive based on the sensor output.

[0356] Case 10: Charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding cases.

[0357] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to determine predictive maintenance information based on the sensor output.

[0358] Case 11: Charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding cases.

[0359] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to selectively actuate the calibration phase (6005).

[0360] During the calibration phase (6005), the at least one control unit (119, 130, 11425, 16800, 20501) is configured to measure the beam offset based on the appearance of the frontal marker structure in the image obtained using the charged particle beam repair device (100, 11120, 11410, 161001, 20000).

[0361] The marker structure is selectively selected from the following groups: drift markers; alignment markers.

[0362] Case 12: Charged particle beam repair devices (100, 11120, 11410, 161001, 20000) as described in Case 11 above.

[0363] The marker structure is attached to the sample.

[0364] Case 13: Charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in Case 11 or 12 above.

[0365] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to output (6117) a warning and / or actuate a fault mode if the beam offset exceeds a predetermined threshold.

[0366] Case 14: Charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding Cases 11 to 13.

[0367] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to actuate the calibration phase (6005) in response to scheduling a repair task for the sample (11110, 20099).

[0368] Case 15: Charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding cases.

[0369] At least one of the plurality of sensors (121, 122, 800) is disposed outside the vacuum chamber (110) of the charged particle beam repair device (100, 11120, 11410, 161001, 20000).

[0370] Case 16: A charged particle beam device (100, 11120, 11410, 161001, 20000) includes a beam source (111, 11412), at least one beam deflection unit (112, 11417, 20102), and a sample stage (114, 11402, 20003). The at least one beam deflection unit (112, 11417, 20102) is configured to deflect a beam (90, 91, 92, 93, 94, 95, 11415, 161003, 161009) of multiple charged particles originating from the beam source, to position the beam on the sample stage (113, 11402, 20003). The charged particle beam repair device (100, 11120, 11410, 161001, 20000) includes:

[0371] Multiple sensors (121, 122, 800) are configured to measure multiple disturbances to multiple physical quantities, each of which affects the beam offset (71, 72, 81) of the beam (90, 91, 92, 93, 94, 95) on the sample stage (114, 11402, 20003), and...

[0372] At least one control unit (119, 130, 11425, 16800, 20501) is configured to determine metadata indicating one or more compensation operations to counteract the beam offset in imaging data acquired by the charged particle beam device in imaging mode based on the sensor outputs (161, 162) of the plurality of sensors (121, 122, 800), and to store the metadata in association with the image data.

[0373] Case 17: Charged particle beam devices (100, 11120, 11410, 161001, 20000) as described in Clause 16,

[0374] This metadata is predictive maintenance information.

[0375] Case 18: Charged particle beam devices (100, 11120, 11410, 161001, 20000) as described in Clauses 16 or 17.

[0376] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to trigger events and / or continuously update the metadata.

[0377] Case 19: A method for manipulating a sample (11110, 20099) on a sample stage mounted to a charged particle beam repair apparatus (100, 11120, 11410, 161001), the charged particle beam repair apparatus comprising a beam source, at least one beam deflection unit, and the sample stage, the at least one beam deflection unit being configured to deflect a charged particle beam originating from the beam source to position the beam on the sample stage.

[0378] This method includes:

[0379] The sensor outputs of multiple sensors in the charged particle beam repair device are obtained. These sensors measure multiple perturbations of multiple physical quantities, each of which affects the beam offset on the sample stage.

[0380] Based on the output of the plurality of sensors, one or more compensation signals are determined to counteract the beam offset.

[0381] Control signals are provided to the beam source, the at least one beam deflection unit, and the precursor gas source to perform electron beam-induced manipulation of the sample.

[0382] During the electron beam induced manipulation, one or more compensation signals are provided to at least one of the beam source, the at least one beam deflection unit, the sample stage, or one or more compensator modules.

[0383] Case 20: The method as described in Case 19, wherein the method is performed by the control unit of the charged particle beam repair apparatus described in Case 1.

[0384] Case 21: A post-processing method for image data acquired by a charged particle beam device, the charged particle beam device comprising a beam source, at least one beam deflection unit, and a sample stage, the at least one beam deflection unit being configured to deflect a charged particle beam originating from the beam source to position the beam on the sample stage.

[0385] This method includes:

[0386] Sensor outputs are obtained from multiple sensors in the charged particle beam repair device. These sensors measure multiple perturbations of multiple physical quantities, each of which affects the beam offset on the sample stage.

[0387] Based on the sensor outputs of the plurality of sensors, determine metadata indicating one or more compensation operations to counteract beam offset in imaging data acquired by the charged particle beam repair device operating in imaging mode; and

[0388] The image data is post-processed based on the metadata and according to one or more compensation operations.

[0389] Case 22: A charged particle beam device (100, 11120, 11410, 161001, 20000) includes a beam source (111, 11412), multiple beam deflection units (112, 11417, 20102), and a sample stage (114, 11402, 20003), wherein each of the beam deflection units (112, 11417, 20102)... One is configured to deflect a beam of multiple charged particles originating from the beam source (90, 91, 92, 93, 94, 95, 11415, 161003, 161009) to position the beam on the sample stage (113, 11402, 20003). The charged particle beam repair device (100, 11120, 11410, 161001, 20000) includes:

[0390] At least one sensor (121, 122, 800) is configured to measure at least one disturbance of at least one physical quantity that affects the beam offset (71, 72, 81) of the beam (90, 91, 92, 93, 94, 95) on the sample stage (114, 11402, 20003).

[0391] At least one control unit (119, 130, 11425, 16800, 20501) is configured to determine one or more compensation signals (165) to counteract the beam deflection (71, 72, 81) based on the sensor output (161, 162) of the at least one sensor (121, 122, 800).

[0392] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide a control signal (166) to a first of the beam source (111, 11412) and the plurality of beam deflection units (112, 11417, 20102) to perform imaging of the sample (11110, 20099) mounted on the sample stage (113, 11402, 20003).

[0393] The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide the one or more compensation signals (165) to a second of the plurality of beam deflection units (112, 11417, 20102) during the imaging process.

[0394] Case 23: Charged particle beam devices (100, 11120, 11410, 161001, 20000) as described in Case 22.

[0395] Among these multiple beam deflection units, the first one is a magnetostatic beam deflection unit.

[0396] Among the plurality of beam deflection units, the second one is an electrostatic beam deflection unit.

[0397] Case 24: Charged particle beam devices (100, 11120, 11410, 161001, 20000) as described in Case 22 or 23.

[0398] Among the plurality of beam deflection units, the first one has a first operating bandwidth.

[0399] Among the plurality of beam deflection units, the second one has a second working bandwidth, which is greater than the first working bandwidth.

[0400] Case 25: A method for imaging a sample mounted on a sample stage of a charged particle beam apparatus, the charged particle beam apparatus comprising a beam source, a plurality of beam deflection units, and the sample stage, each of the plurality of beam deflection units being configured to deflect a beam of charged particles originating from the beam source to position the beam on the sample stage.

[0401] This method includes:

[0402] A control signal is provided to the first of the plurality of beam deflection units to perform imaging of the sample;

[0403] Obtain the sensor outputs of one or more sensors of the charged particle beam device, wherein the one or more sensors measure one or more disturbances of one or more physical quantities, each of which affects the beam offset of the beam on the sample stage.

[0404] Based on the output of the one or more sensors, determine one or more compensation signals to counteract the beam offset; and

[0405] Provide one or more compensation signals to the second of the plurality of beam deflection units.

[0406] Although the invention has been shown and described with reference to certain preferred embodiments, equivalents and modifications will occur to those skilled in the art upon reading and understanding this specification. The invention includes all such equivalents and modifications and is limited only by the scope of the appended claims.

[0407] For illustration, the aforementioned provisions have been disclosed in the context of charged particle beam repair apparatuses, which use electron beam-induced sample manipulation (i.e., EBID and / or EBIE) to perform repair tasks. Typically, repair tasks can also be accomplished using the physical action of ions, i.e., FIB etching. Furthermore, the techniques disclosed herein are not limited to charged particle beam repair apparatuses but can also be used to compensate for disturbances during circuit repair operations on semiconductor wafers or during inspection or measurement tasks during operation in the imaging mode of a corresponding charged particle beam imaging apparatus.

[0408] To illustrate, the various examples described above have been disclosed in the context of charged particle beam devices employing charged particles such as electrons or ions. Similarly, the techniques disclosed herein can be applied to uncharged particle beam devices, such as those used in photon-based microscopes. In this paper, perturbations can be caused by physical quantities such as changes in seismic activity, sound, pressure, wind speed, humidity, and temperature. Corresponding beam devices can be, for example, lasers, X-ray survey tools, etc. Compensation can be achieved by moving the sample stage to counteract beam deviation, such as in conjunction with... Figures 1 to 5 The explanation.

[0409] Furthermore, techniques for actively compensating for beam deviation caused by physical disturbances have been revealed. Such techniques can be applied in conjunction with passive shielding. For example, acoustic vibrations, thermal drift, and laminar or turbulent airflow can be reduced by encapsulating beam-related components of a charged particle beam device within a housing. Noise-absorbing materials can be attached to the housing. Passive or active vibration damping systems can be used to support the housing on a floor.

Claims

1. A charged particle beam repair device (100, 11120, 11410, 161001, 20000), comprising a beam source (111, 11412), at least one beam deflection unit (112, 11417, 20102), a precursor gas source (11456, 11466, 11476, 11450, 11460, 11470, 11452, 11462, 11472), and a sample stage (114, 11402, 20000). 0003), the at least one beam deflection unit (112, 11417, 20102) is configured to deflect a beam (90, 91, 92, 93, 94, 95, 11415, 161003, 161009) of charged particles originating from the beam source, to position the beam on the sample stage (113, 11402, 20003), the charged particle beam repair device (100, 11120, 11410, 161001, 20000) includes: Multiple sensors (121, 122, 800) are configured to measure multiple disturbances of multiple physical quantities, each of which affects the beam offset (71, 72, 81) of the beam (90, 91, 92, 93, 94, 95) on the sample stage (114, 11402, 20003). At least one control unit (119, 130, 11425, 16800, 20501) is configured to determine one or more compensation signals (165) to counteract the beam deflection (71, 72, 81) based on the sensor outputs (161, 162) of the plurality of sensors (121, 122, 800). in, The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide control signals (166) to the beam source (111, 11412), the at least one beam deflection unit (112, 11417, 20102), and the precursor gas source (11456, 11466, 11476, 11450, 11460, 11470, 11452, 11462, 11472) to perform electron beam-induced manipulation of the samples (11110, 20099) mounted on the sample stage (113, 11402, 20003). The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide one or more compensation signals (165) to at least one of the beam source (111, 11412), the at least one beam deflection unit (112, 11417, 20102), the sample stage (114, 11402, 20003), or one or more compensator modules during the electron beam induced manipulation. The at least one control unit (119, 130, 11425, 16800, 20501) is configured to selectively actuate the calibration phase (6005). During the calibration phase (6005), the at least one control unit (119, 130, 11425, 16800, 20501) is configured to measure the beam offset based on the appearance of the marked structure in the image obtained using the charged particle beam repair device (100, 11120, 11410, 161001, 20000).

2. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in claim 1. in, One or more of the plurality of sensors are selected from the group comprising: one or more laser interferometers; one or more linear encoders; one or more accelerometers; one or more acoustic sensors; one or more sensors configured to sense one or more components of a magnetic field; one or more sensors configured to sense one or more components of an electric field; one or more sensors configured to provide a signal synchronized with the AC main voltage; one or more multi-axis accelerometers; And one or more actuators of an active damping system.

3. The charged particle beam repair device as described in claim 1 or 2, in, The at least one control unit (119, 130, 11425, 16800, 20501) is configured to determine the one or more compensation signals based on a predefined multiple-input multiple-output transfer function.

4. The charged particle beam repair device as described in any of the preceding claims, in, The at least one control unit (119, 130, 11425, 16800, 20501) includes a proportional control module configured to determine the one or more compensation signals.

5. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding claims. in, The at least one control unit (119, 130, 11425, 16800, 20501) is configured to determine the one or more compensation signals (165) based on a machine learning algorithm.

6. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding claims. in, The at least one beam deflection unit (112, 11417, 20102) includes a first beam deflection unit and a second beam deflection unit. The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide the control signal (166) to the second beam deflection unit to implement the electron beam-induced manipulation of the sample. The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide one or more compensation signals (165) to the first beam deflection unit.

7. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in claim 6. in, The second beam deflection unit is an electrostatic beam deflection unit. The first beam deflection unit is a static magnetic beam offset unit.

8. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in claim 6 or 7. in, The second beam deflection unit has a higher operating bandwidth than the first beam deflection unit.

9. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding claims. in, The at least one control unit (119, 130, 11425, 16800, 20501) is configured to maintain a log archive based on the sensor output.

10. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding claims. in, The at least one control unit (119, 130, 11425, 16800, 20501) is configured to determine predictive maintenance information based on the sensor output.

11. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding claims. in, The marking structure is at least one of a drift mark or an alignment mark.

12. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding claims. in, The marker structure is attached to the sample.

13. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding claims. in, The at least one control unit (119, 130, 11425, 16800, 20501) is configured to output (6117) a warning and / or actuate a fault mode if the beam deflection exceeds a predetermined threshold.

14. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding claims. in, The at least one control unit (119, 130, 11425, 16800, 20501) is configured to initiate a calibration phase (6005) in response to scheduling a repair operation for the sample (11110, 20099).

15. The charged particle beam repair device (100, 11120, 11410, 161001, 20000) as described in any of the preceding claims. in, At least one of the plurality of sensors (121, 122, 800) is disposed outside the vacuum chamber (110) of the charged particle beam repair device (100, 11120, 11410, 161001, 20000).

16. A charged particle beam device (100, 11120, 11410, 161001, 20000) comprising a beam source (111, 11412), a plurality of beam deflection units (112, 11417, 20102), and a sample stage (114, 11402, 20003), each of the beam deflection units (112, 11417, 20102) being configured to deflect a beam (90, 91, 92, 93, 94, 95, 11415, 161003, 161009) of charged particles originating from the beam source, to position the beam on the sample stage (113, 11402, 20003), the charged particle beam repair device (100, 11120, 11410, 161001, 20000) comprising: At least one sensor (121, 122, 800) is configured to measure at least one disturbance of at least one physical quantity that affects the beam offset (71, 72, 81) of the beam (90, 91, 92, 93, 94, 95) on the sample stage (114, 11402, 20003). At least one control unit (119, 130, 11425, 16800, 20501) is configured to determine one or more compensation signals (165) to counteract the beam deflection (71, 72, 81) based on the sensor output (161, 162) of the at least one sensor (121, 122, 800). in, The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide control signals (166) to the first of the beam source (111, 11412) and the plurality of beam deflection units (112, 11417, 20102) to perform imaging of samples (11110, 20099) mounted on the sample stage (113, 11402, 20003). The at least one control unit (119, 130, 11425, 16800, 20501) is configured to provide the one or more compensation signals (165) to a second of the plurality of beam deflection units (112, 11417, 20102) during the imaging process.

17. The charged particle beam device (100, 11120, 11410, 161001, 20000) as described in claim 16. in, The first of the multiple beam deflection units is a magnetostatic beam deflection unit. The second of these multiple beam deflection units is an electrostatic beam deflection unit.

18. The charged particle beam device (100, 11120, 11410, 161001, 20000) as described in claim 16 or 17. in, The first of the plurality of beam deflection units has a first operating bandwidth. Among them, the second of the plurality of beam deflection units has a second working bandwidth, which is greater than the first working bandwidth.

19. A method for imaging a sample mounted on a sample stage of a charged particle beam apparatus, the charged particle beam apparatus comprising a beam source, a plurality of beam deflection units, and the sample stage, each of the plurality of beam deflection units being configured to deflect a beam of charged particles originating from the beam source to position the beam on the sample stage. in, The method includes: A control signal is provided to the first of the plurality of beam deflection units to perform imaging of the sample; Obtain the sensor outputs of one or more sensors of the charged particle beam device, wherein the one or more sensors measure one or more disturbances of one or more physical quantities, each of which affects the beam offset of the beam on the sample stage. Based on the output of the one or more sensors, determine one or more compensation signals to counteract the beam offset; as well as Provide one or more compensation signals to the second of the plurality of beam deflection units.

Images