Wireless characteristic measurement

Abstract

Embodiments disclosed herein include apparatuses for sensing plasma conditions within a chamber. In one embodiment, the apparatus includes a housing having a plasma sensor on a surface of the housing. In one embodiment, the apparatus further includes a computing system within the housing and electrically coupled to the plasma sensor. In one embodiment, the computing system includes a battery, a board, a processing unit on the board, and a memory coupled to the processing unit. In one embodiment, a wireless communication module can be coupled to the processing unit.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. Patent Application No. 18 / 436,423, filed February 8, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The implementation relates to the field of semiconductor manufacturing, and more particularly to the characterization of wireless measurement devices in a chamber environment.

[0004] Related technical descriptions

[0005] Plasma processing operations are used throughout the fabrication of semiconductor devices. However, monitoring plasma characteristics is challenging. For example, characteristics such as electron density, ion flux, and / or ion energy distribution are useful for determining the performance of a given processing operation. Process optimization is easier when the plasma characteristics of a given process are well-known.

[0006] Currently, plasma characteristics are determined using devices such as retarding field energy analyzers (RFEAs). RFEAs consist of a series of conductive shields applied in a stack. These shields are each maintained at a different voltage to allow ions with specific energies to reach the collector plate. The current generated in the collector plate can be used to determine one or more of the characteristics of the plasma under investigation. However, the RFEA solution has significant limitations. One limitation is that the RFEA must be manually inserted into the plasma chamber. Summary of the Invention

[0007] The embodiments disclosed herein include a device for sensing plasma conditions within a chamber. In one embodiment, the device includes a housing with a plasma sensor on its surface. In another embodiment, the device further includes a computing system within the housing and electrically coupled to the plasma sensor. In one embodiment, the computing system includes a battery, a board, a processing unit on the board, and memory coupled to the processing unit. In one embodiment, a wireless communication module may be coupled to the processing unit.

[0008] The implementation may further include a method for characterizing the plasma within the chamber. In one embodiment, the method includes delivering a sensor device into the chamber without venting the chamber. In one embodiment, the sensor device includes a housing and a plasma sensor on the housing. The sensor device may also include a computing system within the housing, the computing system including a battery, a processor, and a wireless communication system. In one embodiment, the method may further include measuring the plasma characteristics within the chamber using the sensor device and removing the sensor device from the chamber without venting the chamber.

[0009] The embodiments disclosed herein may further include a semiconductor processing tool. In one embodiment, the semiconductor processing tool may include a factory interface, a transfer chamber, a load lock coupled between the factory interface and the transfer chamber, and a processing chamber coupled to the transfer chamber. In one embodiment, the processing chamber includes a base for supporting a substrate, an exhaust line for removing gas from the processing chamber, a plasma source opposite the base, and an antenna within the processing chamber, wherein the antenna has a wired connection to the outside of the processing chamber. Attached Figure Description

[0010] Figure 1 This is a plan view illustration of a semiconductor processing tool compatible with a sensor device according to one embodiment, which can be transferred throughout the processing tool using a wafer transfer robot.

[0011] Figure 2A The image is a perspective view of a sensor device according to one embodiment, which has a housing with a top surface including a plurality of plasma sensors.

[0012] Figure 2B This is a perspective view of a sensor device according to one embodiment, with the cover removed to show the internal components of the sensor device.

[0013] Figure 2C This is a plan view of a plate within a sensor device according to one embodiment, which schematically shows the electrical components used to operate the sensor device.

[0014] Figure 3 This is a cross-sectional view of a plasma sensor according to one embodiment.

[0015] Figure 4A The diagram shows a plan view of a plasma sensor according to one embodiment, which has a set of holes through a housing located at the center of the top surface of the plasma sensor.

[0016] Figure 4B The diagram shows a plan view of a plasma sensor according to one embodiment, which has a set of holes through a housing, the holes being offset from the center of the top surface of the plasma sensor.

[0017] Figure 4C This is a plan view of a sensor device according to one embodiment, which has a plasma sensor array distributed on the top surface of the sensor device.

[0018] Figures 5A to 5CThe diagram illustrates a plan view of a sensor device according to one embodiment, which rotates around several positions to read plasma characteristics across the entire surface of a substrate.

[0019] Figure 5D This is a plan view illustration of a sensor device having an alternative sensor layout pattern according to one embodiment.

[0020] Figure 6 This is a cross-sectional view of a plasma chamber according to one embodiment, which has an integrated antenna for housing a sensor device with wireless communication capabilities.

[0021] Figure 7 This is a process flow diagram of a process for measuring plasma characteristics in a chamber without venting, according to one embodiment.

[0022] Figure 8 This is a process flow diagram of a wireless wake-up sensor device according to one embodiment, and a process for measuring plasma characteristics in a cavity.

[0023] Figure 9 This is a process flow diagram of a process for measuring plasma characteristics in a chamber and stopping the plasma process when the temperature of the sensor device is too high, according to one embodiment.

[0024] Figure 10 A block diagram of an exemplary computer system that can be used in conjunction with a processing tool according to one embodiment is shown. Detailed Implementation

[0025] The embodiments described herein include the characterization of a chamber environment using a wireless measurement device. Numerous specific details are set forth in the following description to provide a thorough understanding of the embodiments. It will be apparent to those skilled in the art that the embodiments can be practiced without such specific details. In other instances, well-known aspects have not been described in detail to avoid unnecessarily obscuring the embodiments. Furthermore, it should be understood that the various embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0026] This document describes various embodiments or aspects of the present disclosure. In some embodiments, different embodiments are implemented independently. However, the embodiments are not limited to isolated implementations. For example, two or more different embodiments may be combined together to be implemented as a single device, process, structure, or the like. In some cases, various embodiments may be combined as a whole. In other cases, a portion of a first embodiment may be combined with portions of one or more different embodiments. For example, a portion of a first embodiment may be combined with a portion of a second embodiment, or a portion of a first embodiment may be combined with portions of a second embodiment and a portion of a third embodiment.

[0027] To explain some of the basic principles of this disclosure, embodiments illustrated and discussed herein with reference to the accompanying drawings are provided. However, the scope of this disclosure covers all related, potential, and / or possible embodiments, even those different from the ideal and / or illustrative examples presented. This disclosure even covers embodiments that incorporate and / or utilize modern, future, and / or unknown components, devices, systems, etc., as alternatives to functionally equivalent, similar, and / or analogous components, devices, systems, etc., used for purposes of explanation, illustration, and example in the embodiments illustrated and / or discussed herein.

[0028] As described above, plasma characterization information is used for process development, process tuning, and / or chamber matching between two or more processes. Existing processes for determining plasma characterization include the use of a decelerating field energy analyzer (RFEA). The RFEA measures the current in the current collector, which is caused by the impact of plasma ions.

[0029] The RFEA is manually inserted into the plasma chamber. This typically requires chamber venting. That is, the vacuum in the chamber is released in order to open it and insert the RFEA. Chamber venting is a costly process. Venting leaves the chamber offline for extended periods. For example, venting and re-seasoning the chamber after a measurement process can take a day or more. Furthermore, the venting process disrupts the chamber's operating conditions. Therefore, measurements may not accurately reflect the adequate seasoning conditions used during chamber operation.

[0030] Furthermore, existing RFEA devices include wired communication systems. This requires wiring through vacuum ports within the chamber to communicate with external devices. Wired solutions are currently favored because the plasma chamber is essentially a Faraday cage, and transmitting radio electromagnetic communication outside the plasma chamber is difficult.

[0031] Therefore, the embodiments disclosed herein address several limitations of RFEA solutions, such as: 1) the need to manually insert the measuring device into the processing chamber; and 2) the need for the RFEA cable to pass through a port within the processing chamber to transmit data to external devices. Avoiding manual insertion of the RFEA into the chamber eliminates the need for venting the processing chamber. A wireless protocol, combined with a receiving antenna configuration within the processing chamber, allows for wireless communication with devices outside the processing chamber.

[0032] Therefore, the embodiments disclosed herein include sensor devices capable of being inserted into a plasma chamber via existing wafer transfer operations. That is, the sensor device may have a form factor and weight comparable to a semiconductor wafer (e.g., a silicon wafer). For example, the sensor device may have a diameter of a standard wafer size (e.g., 200 mm, 300 mm, 450 mm, etc.) and a thickness of less than approximately 10 mm, or approximately 6 mm or less. The mass of the sensor device may be approximately 1000 grams or less, or approximately 500 grams or less. Therefore, the sensor device can be manipulated by a transfer robot within a semiconductor processing tool, and the sensor device can be assembled through ports, doors, load locks, and / or the like within the semiconductor processing tool.

[0033] The ability to transfer data within the sensor device without venting offers significant benefits. For example, chamber downtime is significantly reduced. In some implementations, the sensor device can perform measurements in less than one hour, less than half an hour, or less than fifteen minutes without venting. Furthermore, no re-quartzing or alteration of any other process parameters is required. This makes the measurement process more similar (if not identical) to the current online performance of the chamber. The combination of reduced measurement time and improved similarity to online performance makes information from the sensor device more useful for process development, process control, chamber matching, and / or the like.

[0034] The sensor device described herein may also include wireless communication capabilities. In one embodiment, the sensor device includes an RF antenna that allows frequency modulation to transmit data in and out of the chamber. Other embodiments may include an integrated antenna and communication protocol, such as Bluetooth. However, instead of transmitting signals from the sensor device directly to the outside of the chamber, embodiments may include an intermediate antenna integrated into the chamber (e.g., in an exhaust duct, on a base, etc.). The intermediate antenna may include a wired connection to devices outside the chamber.

[0035] The embodiments disclosed herein include architectures and systems that allow multiple components to be integrated into the small form factor required for such portable device sensors. For example, battery solutions, circuit systems / components, and / or similar architectural and design improvements can be used to meet the form factor requirements of such portable device sensors.

[0036] The embodiments disclosed herein also include system protection and / or battery life improvement features. Since the sensor device will be exposed to the plasma environment, system temperature control helps prevent overheating of the sensor device. For example, when the temperature sensor within the sensor device indicates that the maximum temperature has been reached, the sensor device can send an alarm signal to the controller of the plasma chamber to stop the plasma process. This interlocking feature prevents damage to components of the sensor device, such as the battery.

[0037] Regarding improvements to battery life, the sensor device can be transported in a sleep state. Once inside the chamber, a wake-up signal can be transmitted to the sensor device. Upon receiving the wake-up signal, the sensor device can begin plasma measurements. After the plasma process, a sleep signal can be transmitted to the sensor device to return it to a sleep state.

[0038] The embodiments disclosed herein include sensor devices incorporating RFEA sensors. Such sensors (sometimes referred to as “buttons”) may include stacks of conductive shielding elements maintained at different voltages. The shielding elements and the applied voltage allow certain ions to travel to the current collector. The current within the current collector may be associated with different plasma characteristics. Although RFEA sensors are described in more detail herein, it should be understood that many different sensor types are compatible with the embodiments disclosed herein. For example, the sensor may include one or more of RFEA, Faraday cup, ion angle measurement sensors, or radical sensors. Embodiments may also include sensor devices having multiple sensors for detecting conditions or characteristics within the chamber other than plasma characteristics. For example, temperature, pressure, electromagnetic radiation intensity and / or frequency and / or the like may also be measured using sensor devices according to the embodiments disclosed herein.

[0039] In one embodiment, the sensor may have holes extending through the housing, centered on the top surface of the sensor housing. In other embodiments, the sensor may include holes offset from the center of the housing. For example, the set of holes may be provided towards the edge of the top surface of the sensor housing. This may be advantageous when the sensor is positioned near the edge of a sensor device to measure plasma characteristics up to the edge of the substrate.

[0040] Now see Figure 1The illustration shows a plan view of a semiconductor processing tool 100 according to one embodiment. In one embodiment, the semiconductor processing tool 100 may sometimes be referred to as a cluster tool, an inline tool, or a similar tool because multiple chambers 150 are coupled to a single system. The multiple chambers 150 may all comprise the same type of chamber, or the multiple chambers 150 may comprise two or more different types of chambers. Although four chambers 150 are illustrated, it should be understood that the embodiments disclosed herein are compatible with semiconductor processing tools 100 that include one or more chambers 150. In one embodiment, the chambers 150 may include one or more of the following: a deposition chamber, an etching chamber, a resist deposition (e.g., spin coating) chamber, an annealing chamber, an exposure chamber (e.g., an ultraviolet exposure tool, such as a deep ultraviolet (DUV) exposure tool, an extreme ultraviolet (EUV) exposure tool, etc.), a resist development chamber, or a similar chamber.

[0041] In one embodiment, two or more chambers 150 may be coupled to a transfer chamber 114. The transfer chamber 114 may include a wafer transfer robot 115. The wafer transfer robot 115 may be a multi-axis robotic device. The wafer transfer robot 115 may include an end effector 116 or the like for securing and transporting wafers or sensor devices 135 between the chambers 150. In one embodiment, the transfer chamber 114 may be maintained at a pressure below atmospheric pressure, such as a vacuum.

[0042] In one embodiment, load lock 113 couples transfer chamber 114 to factory interface (FI) 110. FI 110 may be coupled to one or more front-opening unified pods (FOUPs) 112. A robot (not shown) within FI 110 may transfer wafers (or sensor devices 135) between FOUP 112 and load lock 113. Load lock 113 may provide a transition between atmospheric pressure (e.g., in FI 110) and vacuum pressure (e.g., in transfer chamber 114).

[0043] In one embodiment, one or more sensor devices 135 may be transported within the semiconductor processing tool 100 and the rest of the semiconductor foundry using a robotic system. For example, the sensor device 135 is shown supported from a load lock 113 on a base 152 (e.g., an electrostatic chuck; ESC) within a first chamber 150. This sensor device 135 may have initially been transferred to the semiconductor processing tool 100 in FOUP 112. FOUP 112 may have been removed by a robot in FI 110, passed through load lock 113, and moved from load lock 113 to chamber 150 by a wafer transfer robot 115.

[0044] In one embodiment, sensor device 135 may have a similar form factor and weight to typical wafers delivered by semiconductor processing tool 100 (e.g., 200 mm wafers, 300 mm wafers, 450 mm wafers, etc.). The components of sensor device 135 and how sensor device 135 is packaged into this form factor will be described in more detail below. Typically, sensor device 135 may include one or more sensors 136. Sensor 136 may include plasma sensors. In a particular embodiment, the plasma sensor is an RFEA sensor, similar to those sensors described in more detail herein. However, it should be understood that other types of sensors, including sensors for detecting non-plasma-related characteristics, may be included on sensor device 135.

[0045] In one embodiment, sensor device 135 may be a battery-operated device. Therefore, sensor device 135 can be charged after use or after any suitable duration of use. In some embodiments, charging of sensor device 135 may be performed at docking station 130. Docking station 130 may include structures for coupling to a battery in sensor device 135 for charging the battery. Such structures may include a plug or wireless power delivery solution (e.g., an induction coil, etc.). Docking station 130 may also include data connectivity capabilities (e.g., wireless or wired) for transmitting data to and / or from sensor device 135. In one embodiment, docking station 130 may be a stationary, fixed device. In other embodiments, docking station 130 may be part of FOUP 112 or other transport equipment.

[0046] Now see Figures 2A to 2C The illustration shows a series of diagrams illustrating the structure of sensor device 235 according to one embodiment. Figure 2A This is a perspective view of the entire housing of sensor device 235. Figure 2B This is a perspective view of sensor device 235, with its cover removed to show the internal components. Figure 2CThis is a plan view of a board inside a sensor device, which houses electronic components, a processor, a circuit system, and / or the like.

[0047] Now see Figure 2A The illustration shows a perspective view of a sensor device 235 according to one embodiment. In one embodiment, the sensor device 235 may include a housing. In the illustrated embodiment, the housing includes a lower housing 231 and a cover 232. The lower housing 231 and the cover 232 may be coupled together using any suitable one or more fasteners (e.g., clamps, screws, magnets, etc.). In one embodiment, the seal between the lower housing 231 and the cover 232 may be an airtight seal. However, in some embodiments, a more permeable seal may also be used. In some embodiments, an O-ring, gasket, or the like may be provided between the lower housing 231 and the cover 232 (in... Figure 2A (Not visible in the middle). Although in Figure 2A The illustrations depict specific enclosure configurations, but it should be understood that enclosures may include any structure that provides the robustness necessary for transport within a semiconductor manufacturing (or semiconductor foundry) environment.

[0048] In one embodiment, the lower housing 231 and / or cover 232 may comprise any suitable material. For example, aluminum, aluminum nitride, sintered aluminum nitride powder, ceramics, light metal alloys, machinable glass, or the like may be used for the lower housing 231 and / or cover 232. In some embodiments, the lower housing 231 and / or cover 232 may be anodized or sputter-coated. Anodizing or sputter-coating the lower housing 231 and / or cover 232 may be beneficial for arc protection. Embodiments may include the use of materials with high thermal conductivity to improve temperature control.

[0049] In one embodiment, the lower housing 231 may include one or more ports 234. Ports 234 provide access to internal components (not shown). For example, port 234 may allow a power cable or the like to be coupled to a battery within the housing. Port 234 may be a full opening through the lower housing 231. In other embodiments, port 234 may be a plug interface that still maintains a seal between the interior and exterior of the sensor device 235. Port 234 may also be a window for wireless communication such as Bluetooth.

[0050] In one embodiment, one or more sensors 236 may be distributed across the entire top surface of the cover 232. In the illustrated embodiment, as an example, nine sensors 236 are provided in a cross configuration. The sensors 236 may include any suitable sensor device. In some embodiments, the sensors 236 are used for plasma monitoring. For example, the sensors 236 may include an RFEA device. The sensors 236 may be disposed in a recess in the cover 232 such that the top surface of the sensors 236 is substantially coplanar with the top surface of the cover 232. In one embodiment, the sensors 236 may be held in the recess using any coupling device, such as screws, magnets, adhesives, retaining arms or components or the like. In some embodiments, electrical contact with the bottom of the sensors 236 may be provided by a contact solution with a loaded spring.

[0051] In one embodiment, one or more windows 233 may also be provided on the surface of the cover 232. The windows 233 may be made of a dielectric material that allows electromagnetic radiation to be transmitted out of the housing. For example, an antenna (not visible) may be provided below each window 233. The dielectric material may include ceramic materials or the like.

[0052] In one embodiment, sensor device 235 may include an outline size similar to that of a standard wafer (e.g., a silicon wafer). For example, sensor device 235 may have a diameter of approximately 200 mm, approximately 300 mm, approximately 450 mm, or similar. Furthermore, the thickness of sensor device 235 may be approximately 10 mm or less, or approximately 6 mm or less. To accommodate transport by wafer-handling robots, sensor device 235 may have a weight of approximately 1000 grams or less, or approximately 500 grams or less. As used herein, "approximately" may indicate a value range within ten percent of said value. For example, approximately 10 mm may refer to a value range from 9 mm to 11 mm.

[0053] Now see Figure 2B The illustration shows a perspective view of a sensor device 235 with its cover 232 removed according to one embodiment. Removal of the cover 232 exposes internal components that may be present within the sensor device 235. In one embodiment, the sensor device 235 may include a board 237. The board 237 may be a printed circuit board (PCB) or the like. (The last sentence appears to be incomplete and possibly refers to a different embodiment.) Figure 2B A more detailed description may be provided on board 237 for electrical components, wiring and / or the like.

[0054] In one embodiment, multiple additional components may be electrically coupled to board 237 via cable 241, wires, and / or other electrical interconnection solutions. In one embodiment, one or more antennas 238 may be coupled to board 237. Antennas 238 may be RF antennas that transmit (and / or receive) electromagnetic radiation to / from sensor device 235 for wireless communication. Antennas 238 used in some sensor devices 235 may be adapted for frequency modulation and / or amplitude modulation. Such modulation techniques may allow for enhanced ability to transmit and receive information across plasma chamber walls.

[0055] In one embodiment, one or more of the additional components may include battery 240. Battery 240 may be a rechargeable battery, such as a solid-state battery. Suitable solid-state batteries may include any solid electrolyte. For example, in some embodiments, solid electrolytes such as ceramic or glass may be used. In one embodiment, battery 240 is compatible with the typical temperatures of vacuum and plasma processing environments. For example, battery 240 can withstand temperatures up to about 80°C, up to about 120°C, up to about 150°C, or up to about 200°C. Battery 240 may also have an energy density capable of providing up to about 1 hour of scan operation or up to about 30 minutes of scan operation (scans are performed at intervals of once per second, once every 10 seconds, once every 30 seconds, or once per minute). However, other scan frequencies may be used in some embodiments.

[0056] Battery 240 can be charged by connecting a cable to battery 240 via port 234. Battery 240 may be combined with an induction coil and / or the like to enable wireless charging. In other embodiments, battery 240 may be replaced periodically. An associated charging circuitry (not shown) may be included around battery 240 within sensor device 235 (e.g., on board 237) and / or on battery 240.

[0057] In one embodiment, an expansion slot 239 may also be provided within the sensor device 235. The expansion slot 239 may be used to include an additional battery 240, an antenna 238, and / or the like. This may enable the sensor device 235 to achieve enhanced scan time, improved wireless performance, redundancy, or other benefits.

[0058] Now see Figure 2CThe illustration shows a plan view of a board 237 within a sensor device 235 according to one embodiment. In one embodiment, board 237 may include a processor 243. In one embodiment, processor 243 may include a central processing unit (CPU), an application-specific integrated circuit (ASIC), or the like. Processor 243 may implement software instructions for initiating, controlling, and / or stopping scanning of sensor 236. Processor 243 may also control data collection, data processing, and / or the like. Processor 243 may control data transmission, battery control, and / or the like. In one embodiment, processor 243 may implement any process or method (or part of a process or method) described in more detail herein. Memory 245 may be coupled to processor 243. Memory 245 may be any suitable non-transitory computer-readable medium. Memory 245 may be configured to store instructions for operating processor 243. Memory 245 may also be configured to store data acquired from sensor 236.

[0059] In one embodiment, board 237 may include any number of components for processing or otherwise handling data received from sensor 236. For example, analog-to-digital converter (ADC) 242 may convert analog signals from sensor 236 into digital signals that can be processed by processor 243.

[0060] In one embodiment, plate 237 may also include a pressure sensor 247. The pressure sensor 247 can be used to determine when the sensor device 235 is in a vacuum environment. This may be useful because the RFEA sensor 236 may be susceptible to arcing and / or other damage if operated under atmospheric conditions.

[0061] In one embodiment, board 237 may also include a temperature sensor 246. The temperature sensor 246 can be used to protect sensor device 235 from excessively high temperatures. For example, if the temperature sensor 246 reads a temperature exceeding a maximum threshold, processor 243 may be configured to send an alarm to an external device controlling the plasma chamber. This alarm may cause the plasma process to stop. When the temperature sensor 246 detects a high temperature, sensor device 235 may also be sent to a cooling chamber of the semiconductor processing tool to reduce the temperature of sensor device 235.

[0062] In one embodiment, board 237 may also include a wireless communication module 244. The wireless communication module 244 may include one or more antennas and / or transceiver lines and circuitry for transmitting and receiving wireless signals. In one embodiment, the wireless communication module 244 may operate at approximately 2.4 GHz. For example, the wireless communication module 244 may operate according to a suitable communication protocol, such as Bluetooth and / or the like. Using such a wireless protocol allows for increased data transmission speeds compared to frequency modulation techniques. For example, such a wireless protocol may have transmission speeds one or more orders of magnitude faster than using frequency modulation. As will be described in more detail herein, this embodiment allows transmission from the plasma chamber to the outside via an intermediate antenna integrated into the plasma chamber. In one embodiment, the electrical characteristics of the wireless communication module 244 may be selected for one or more of high breakdown voltage, high switching frequency, or high current capability. Transistor technologies that can satisfy one or more of these design parameters may include those formed using gallium arsenide (GaAs) material systems. In some embodiments, a monolithic microwave integrated circuit (MMIC) system may also be used. In one embodiment, one or more of the components on plate 237 (or any electronic components within sensor device 235) may include a coating to prevent degassing (e.g., paraxylene).

[0063] Now see Figure 3 The diagram shows a cross-sectional view of a sensor 336 according to one embodiment. In one embodiment, the sensor 336 may be an RFEA sensor 336. The RFEA sensor 336 may include a housing 321 having one or more holes 328. The holes 328 may allow species from plasma (not shown) to enter the interior of the sensor 336. In one embodiment, the interior of the RFEA sensor 336 may include a plurality of conductive shields 322, 323, 324, 325 arranged in a stack. These shields may each be maintained at different voltages V1 to V4. A current collector 326 may be provided at the bottom of the shield stack, and the current collector 326 may be maintained at voltage V5. The shields 322 to 325 and the current collector 326 may be spaced apart from each other through an electrical insulating layer 327.

[0064] In one embodiment, the top shield 322 can be used to prevent plasma formation within the RFEA sensor 336. The next shield 323 can be an electron repulsion shield. Shield 323 repels electrons by having a negative voltage V2. The next shield 324 can be a discriminator shield that controls the flow of electrons to the current collector 326. In some embodiments, a third voltage V3 can be scanned within a range to control the ion flow through the RFEA sensor 336. The bottom shield 325 can be an auxiliary electron suppression shield. Voltage V4 can be negatively biased relative to voltage V5 of the current collector 326 to generate a decelerating potential for repelling auxiliary electrons generated by the impact of ions with the current collector 326.

[0065] exist Figure 3 In the illustrated embodiment, the holes passing through shields 322 to 325 are generally vertical. This is useful for measuring ions entering hole 328 via a vertical path. However, not all ions have a vertical path, and there may be a certain percentage of angled ions. In some embodiments, one or more shields with holes of different angles may be added to the RFEA sensor 336 to also measure the ion angular distribution.

[0066] exist Figure 3 In this document, the RFEA sensor 336 is described in detail as a type of sensor that can be integrated into the sensor device described herein. However, it should be understood that other types of sensors, such as Faraday cups, ion angle measurement sensors, or free radical sensors, can be used in the sensor device. Embodiments may also include sensor devices with sensors for detecting conditions or characteristics within a chamber other than plasma characteristics. For example, temperature, pressure, electromagnetic radiation intensity and / or frequency, and / or the like, can also be measured using the sensor device according to the embodiments disclosed herein.

[0067] Now see Figures 4A to 4C The illustration shows a display sensor 436 according to one embodiment. Figure 4A and 4B ) and sensor device 435 ( Figure 4C A series of planar diagrams are shown. The difference in sensor 436 lies in the position of the group 420 of holes 428. Figure 4C An example is shown of how different sensor layouts 436 can be used within a single sensor device 435 to improve sensing coverage.

[0068] Now see Figure 4AThe illustration shows a plan view of an RFEA sensor 436 according to one embodiment. In one embodiment, the RFEA sensor 436 may include a top housing 421. In one embodiment, a group 420 of holes 428 may be provided on the housing 421 (e.g., the top surface of the housing 421). In the illustrated embodiment, the group 420 is generally centered at the center point of the top surface of the housing 421. This type of sensor 436 may be referred to as a symmetrical sensor 436.

[0069] Now see Figure 4B The illustration shows a plan view of an RFEA sensor 436 according to one embodiment. In one embodiment, the RFEA sensor 436 may include a top housing 421. In one embodiment, a group 420 of holes 428 may be provided on the housing 421 (e.g., the top surface of the housing 421). In the illustrated embodiment, the group 420 is substantially offset from the center point of the top surface of the housing 421. This type of sensor 436 may be referred to as an asymmetric sensor 436. As shown, the group 420 includes holes 428 near the outer edge of the sensor 436. This allows for improved edge detection, which will be described in more detail below.

[0070] Now see Figure 4C The illustration shows a plan view of a sensor device 435 according to one embodiment. In one embodiment, the sensor device 435 is similar to any sensor device described in more detail herein. In one embodiment, the sensor device 435 may include a plurality of RFEA sensors 436 distributed across a cover 432 of the sensor device 435. The sensors 436 may include a symmetrical sensor 436A and an asymmetrical sensor 436B. The symmetrical sensor 436A may have a group of holes 420 (not shown separately) located at the center of the symmetrical sensor 436A. The asymmetrical sensor 436B may have a group of holes 420 located at the outer edge of the asymmetrical sensor 436B. Furthermore, the asymmetrical sensor 436B is oriented such that the group of holes 420 is close to the outer edge of the cover 432. This allows plasma characteristics to be sensed closer to the edge of the sensor device 435. This is particularly useful because edge effects are often difficult to control and predict, and information about plasma processes near the wafer edge can be especially beneficial.

[0071] exist Figure 4C In the illustrated embodiment, sensors 436 are distributed in a cross pattern to provide edge-to-edge information in at least two directions. However, this sensor coverage can also be achieved using a smaller number of sensors. Figures 5A to 5C An example of this process is illustrated.

[0072] Now see Figure 5AThe illustration shows a plan view of a sensor device 535 according to one embodiment. In one embodiment, the sensor device 535 may be similar to any sensor device described in more detail herein. In one embodiment, the sensor device 535 may include a cover 532 on which a sensor 536 is embedded and / or placed. In the illustrated embodiment, the sensors 536 are aligned in a row across the width of the sensor device 535. In one embodiment, the sensor 536 may be an RFEA sensor 536 and / or any sensor similar to those described in more detail herein. Although in Figures 5A to 5C The diagram illustrates three sensors 536 arranged in a row across the diameter of the cover 532; however, it should be understood that, according to various embodiments, any arrangement of sensors 536 distributed across the surface of the cover 532 can be used (with appropriate rotation). For example, Figure 5D An illustration is provided of three sensors 536 located between the center and the edge of sensor device 535. This sensor device 535 can also be rotated to provide full-surface measurements.

[0073] In this embodiment, sensor device 535 provides edge-to-edge plasma diagnostics in one direction. However, if sensor device 535 is rotated, additional information can be provided. For example, Figure 5B The illustration shows sensor device 535 rotated approximately 45°, while Figure 5C The illustration shows a sensor device 535 rotated approximately 90°. This rotation can be provided by an alignment device coupled to a plasma chamber (not shown). Since the sensor device 535 can enter and exit the chamber without venting the chamber, performing this rotation is simpler than existing solutions and does not require significant downtime.

[0074] The embodiments disclosed herein may include sensor devices compatible with a wide variety of different types of chambers, tools, systems, and / or the like. In some embodiments, the chamber may be expanded to include an intermediate antenna, which may be used to improve wireless communication between the sensor device and external components, such as servers, controllers, and / or the like. Figure 6 An example of this type of chamber is illustrated.

[0075] Now see Figure 6The illustration shows a cross-sectional view of a tool chamber 650 according to one embodiment. In one embodiment, chamber 650 may be a tool compatible with sensor device 635, such as those chambers described in more detail herein. For example, chamber 650 may include a chamber body 651 capable of supporting a vacuum environment. Spacer 653 may support spray head 654, and housing 655 or cover may cover spray head 654. Plasma source 656 may be coupled to housing 655. Plasma source 656 may be a remote plasma source (RPS), inductively coupled plasma (ICP), capacitively coupled plasma (CCP), microwave plasma source, or any other suitable plasma source. The plasma can operate at any suitable frequency. For example, plasma frequencies of approximately 2 MHz, approximately 13 MHz, approximately 27 MHz, approximately 40 MHz, or similar values ​​may be used. In some embodiments, power values ​​between approximately 100 W and 10 kW may be suitable for RF applications, while power values ​​between approximately 100 W and 50 kW or greater may be suitable for DC applications. However, in other embodiments, any frequency or power can be used. In one embodiment, offset 657 may be coupled between base 652 and ground 658. In one embodiment, chamber 650 may be suitable for sputtering, deposition (e.g., plasma-enhanced chemical vapor deposition, plasma-enhanced atomic layer deposition, etc.), etching processes (e.g., conductor etching, dielectric etching, etc.), plasma implantation processes, plasma processing processes, or any other plasma process.

[0076] In one embodiment, sensor device 635 may include wireless communication module 644. Wireless communication module 644 may be similar to any of the modules described in more detail herein. For example, wireless communication module 644 may include a Bluetooth-compatible wireless system. In one embodiment, wireless communication module 644 may be communicatively coupled (via wireless connection) to an intermediate antenna within chamber 650. For example, intermediate antenna 661 may be provided within exhaust duct 659, and intermediate antenna 661 may be provided on (or in) base 652.

[0077] It should be understood that the intermediate antenna can be provided in any location within the chamber body 651 that will not significantly affect the intermediate antenna from the plasma environment (e.g., due to excessive interference, harsh environmental conditions, or chemicals and / or the like). For example, the base 652 is a good location because the intermediate antenna 662 can be masked from plasma effects by concealing it under the base 652, providing it along the sidewall of the base 652, or embedding it within the base 652. Similarly, placing the intermediate antenna 661 within the exhaust line 659 will shield the intermediate antenna 661 from plasma effects.

[0078] A wireless link 665 is provided between the communication module 644 and the intermediate antenna 661, and a wireless link 663 is provided between the communication module 644 and the intermediate antenna 662. Although two intermediate antennas 661 and 662 are shown, it should be understood that embodiments may include a single intermediate antenna. As shown, wireless links 663 and 665 do not pass through the chamber body 651 of the chamber 650. Therefore, the generation of a Faraday cage around the sensor device 635 will not be a problem.

[0079] To transmit signals out of chamber 650, intermediate antennas 661 and / or 662 can be physically connected to external component 660 via wires 666 and / or 667. Since intermediate antennas 661 and 662 do not move between chambers (as sensor device 635 typically moves), the hard-wired configuration does not cause significant problems for chamber 650. External component 660 can be a server, computing system, and / or the like. External component 660 can control the operation of chamber 650, larger tools including chamber 650, the entire manufacturing facility, sensor device 635, or one or more of the like.

[0080] Now see Figure 7 The illustration shows a process flow diagram of a process 770 for measuring plasma characteristics in a chamber according to one embodiment. In one embodiment, process 770 may begin with operation 771, which includes delivering a sensor device into the chamber without venting the chamber. In one embodiment, the sensor device may be similar to any sensor device described in more detail herein. For example, the sensor device may include one or more RFEA sensors having a wafer-like form factor. The sensor device may include a wireless communication module, such as those described in more detail herein. In one embodiment, the sensor device may be delivered into the chamber using a wafer-transfer robot that traverses the sensor device through larger tools, such as swarm tools.

[0081] In one embodiment, process 770 can proceed to operation 772, which includes measuring plasma characteristics within the chamber using a sensor device. In one embodiment, an RFEA sensor can record currents associated with specific plasma characteristics. The sensor device can process and / or store the digital recordings of the currents. In some embodiments, a wireless communication module (e.g., via Bluetooth, frequency modulation, etc.) can be used to wirelessly transmit plasma characteristic data to the outside of the chamber. In some cases, an intermediate antenna, similar to those described more specifically herein, can be used to complete data transmission from the sensor device to the outside of the chamber.

[0082] In one embodiment, process 770 may proceed to operation 773, which includes removing the sensor device from the chamber without venting the chamber. In one embodiment, a wafer robotic transfer device or similar device may be used to remove the sensor device. After removal from the chamber, the sensor device may be sent to a docking station for charging, data download / upload, storage, cooling, or any other suitable purpose.

[0083] Process 770 and its associated sensor device overcome several existing problems with RFEA solutions, which are often voluminous and unsuitable for seamless data collection. Specifically, existing RFEA solutions require the plasma chamber to be taken offline when a measurement is needed. This involves evacuating the chamber (i.e., releasing the vacuum within the chamber) and opening the chamber lid. The RFEA device is then inserted into the chamber, and the lid is closed. The vacuum chamber is then evacuated again and re-quaternized. Measurements can then be performed. The evacuation process is repeated to remove the RFEA device, and the chamber needs to be quaternized to resume production. This process can take a day or longer. Therefore, measurements can only be performed occasionally, and the flexibility to adapt to a given plasma process is limited. In contrast, Process 770 allows the sensor device to be inserted into or removed from the chamber using existing wafer transfer robots. This eliminates the need for chamber evacuation. Furthermore, wireless communication included in some embodiments of Process 770 allows the elimination of wired connections to the sensor device. This further enhances the portability of the sensor device and reduces the burden of performing measurements.

[0084] Now see Figure 8 The diagram illustrates a process flow diagram of process 880 according to an additional embodiment. Process 880 is used to improve the battery utilization of a sensor device. Specifically, since the sensor device is battery-operated, embodiments of process 880 may include a series of operations for starting the sensor device and putting the sensor device into sleep mode.

[0085] In one embodiment, process 880 may begin with operation 881, which includes providing a sensor device in a plasma chamber. In one embodiment, the sensor device may include a wireless communication system capable of communicating with systems outside the chamber. In one embodiment, the sensor device may be similar to any sensor device described in more detail herein.

[0086] In one embodiment, process 880 may continue to operation 882, which includes receiving a wake-up signal from a system outside the chamber at the sensor device. Prior to receiving the wake-up signal, the sensor device may be in a "sleep" state. That is, the sensor device may not be fully operational, and one or more systems may be temporarily disabled or not drawing significant power. When in "sleep" mode, the sensor device may be powered on to detect and / or receive the wake-up signal. The wake-up signal may be a command to initiate one or more processes on the sensor device. For example, as shown in operation 883, the wake-up signal may initiate a data recording communication period on the sensor device, causing the sensor to begin scanning and recording data related to plasma characteristics in the chamber. For example, operation 883 may include measuring plasma characteristics within the chamber using the sensor device. After measuring plasma characteristics for any suitable duration, the sensor device may return to sleep mode. Returning to sleep mode may be initiated by the elapsed time period or by receiving another signal instructing the sensor device to return to sleep mode.

[0087] Now see Figure 9 The illustration shows a process flow diagram of process 990 for protecting a sensor device from overheating according to one embodiment. In one embodiment, process 990 may begin with operation 991, which includes providing the sensor device in a plasma chamber. In one embodiment, the sensor device may be similar to any sensor device described in more detail herein. For example, the sensor device may include a wireless communication system capable of communicating with systems outside the chamber.

[0088] In one embodiment, process 990 may proceed to operation 992, which includes measuring plasma characteristics within the chamber using a sensor device. For example, an RFEA sensor may measure one or more of the plasma's ion density, ion flux, and / or ion energy distribution.

[0089] In one embodiment, process 990 may proceed to operation 993, which includes sending a temperature alarm to a system outside the chamber when a critical temperature limit of the sensor device is reached. In one embodiment, the sensor device may include a temperature sensor capable of monitoring the temperature of the sensor device. When the temperature sensor measures a temperature at or above a critical temperature limit (e.g., 100°C or higher, 120°C or higher, 150°C or higher, or 200°C or higher), the sensor device may send an alarm.

[0090] In some embodiments, the system outside the chamber may be equipped with an interlocking device that shuts down plasma processing within the chamber in response to a temperature alarm. This prevents the sensor device's temperature from significantly rising above a critical limit. In some cases, the system outside the chamber may also instruct a wafer transfer device coupled to the chamber to retrieve the sensor device from the chamber. The wafer transfer device may also transfer the sensor device to a cooling chamber for more rapid temperature reduction.

[0091] Now see Figure 10 This diagram illustrates a block diagram of an exemplary computer system 1000 of a processing tool according to one embodiment. In one embodiment, the computer system 1000 is coupled to and controls processing within the processing tool. The computer system 1000 may be connected (e.g., networked) to other machines in a Local Area Network (LAN), an internal network, an external network, or the Internet. The computer system 1000 may operate as a server or client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 1000 may be a personal computer (PC), tablet PC, set-top box (STB), personal digital assistant (PDA), cellular phone, web device, server, network router, switch, or bridge, or any machine capable of executing a set of instructions (sequentially or otherwise) specifying the actions to be taken by the machine. Furthermore, although computer system 1000 shows only a single machine, the term "machine" should also be understood to include any collection of machines (e.g., computers) that individually or jointly execute a set (or more) of instructions to perform any one or more of the methods described herein.

[0092] Computer system 1000 may include computer program product or software 1022 having a non-transitory machine-readable medium storing instructions that can be used to program computer system 1000 (or other electronic components) to perform a process according to an embodiment. Machine-readable medium includes any mechanism for storing or transmitting information in a machine-readable (e.g., computer-readable) form. For example, machine-readable (e.g., computer-readable) media include machine-readable (e.g., computer-readable) storage media (e.g., read-only memory (“ROM”), random access memory (“RAM”), disk storage media, optical storage media, flash memory devices, etc.), machine-readable (e.g., computer-readable) transmission media (electrical, optical, acoustic, or other forms of propagation signals (e.g., infrared signals, digital signals, etc.)), etc.

[0093] In one embodiment, the computer system 1000 includes a system processor 1002, main memory 1004 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) (such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM)), static memory 1006 (e.g., flash memory, static random access memory (SRAM)), and auxiliary memory 1018 (e.g., a data storage device), all of which communicate with each other via a bus 1030.

[0094] System processor 1002 represents one or more general-purpose processing devices, such as microsystem processors, central processing units, or the like. More specifically, the system processor may be a complex instruction set computing (CISC) microsystem processor, a reduced instruction set computing (RISC) microsystem processor, a very long instruction word (VLIW) microsystem processor, a system processor implementing other instruction sets, or a system processor implementing combinations of instruction sets. System processor 1002 may also be one or more special-purpose processing devices, such as application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), digital signal system processors (DSPs), network system processors, or the like. System processor 1002 is configured to execute processing logic 1026 for performing the operations described herein.

[0095] The computer system 1000 may further include a system network interface device 1008 for communicating with other devices or machines. The computer system 1000 may also include a video display unit 1010 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 1012 (e.g., a keyboard), a cursor control device 1014 (e.g., a mouse), and a signal generation device 1016 (e.g., a speaker).

[0096] Auxiliary memory 1018 may include machine-accessible storage medium 1031 (or more specifically, computer-readable storage medium) on which one or more instruction sets (e.g., software 1022) are stored, embodying any one or more methods or functions described herein. During execution by computer system 1000, software 1022 may also reside wholly or at least partially within main memory 1004 and / or system processor 1002, which also constitute machine-readable storage media. Software 1022 may be further transmitted or received on network 1061 via system network interface device 1008. In one embodiment, network interface device 1008 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0097] Although the machine-accessible storage medium 1031 illustrated in one exemplary embodiment is a single medium, the term "machine-readable storage medium" should be understood to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated cache memory and server) that store one or more instruction sets. The term "machine-readable storage medium" should also be considered to include any medium capable of storing or encoding a set of instructions executable by a machine and enabling the machine to perform one or more methods. Therefore, the term "machine-readable storage medium" should be understood to include, but is not limited to, solid-state memory and optical and magnetic media.

[0098] Specific exemplary embodiments have been described in the foregoing specification. It is obvious that various modifications can be made thereto without departing from the scope of the appended claims. Therefore, the specification and drawings should be considered illustrative rather than restrictive.

Claims

1. An apparatus, the apparatus comprising: shell; A plasma sensor, the plasma sensor being located on the surface of the housing; and A computing system, located within the housing and electrically coupled to the plasma sensor, wherein the computing system comprises: Battery; plate; Processing unit, the processing unit being on the board; Memory, said memory being coupled to said processing unit; and A wireless communication module, which is coupled to the processing unit.

2. The device of claim 1, wherein the wireless communication module includes an RF antenna.

3. The device of claim 2, wherein the housing includes a ceramic inlay on the RF antenna.

4. The device of claim 1, wherein the wireless communication module is electrically coupled to the board, and wherein the wireless communication module operates according to a Bluetooth protocol having one or more antennas.

5. The device of claim 1, wherein the computing system further includes a temperature sensor.

6. The device of claim 1, wherein the thickness of the housing is less than 10 mm.

7. The device of claim 1, wherein the weight of the device is less than 1000 grams.

8. The device of claim 1, wherein the plasma sensor comprises one or more of a decelerating field energy analyzer (RFEA), a Faraday cup, an ion angle measurement sensor, or a free radical sensor.

9. The device of claim 8, wherein the RFEA includes a set of holes through the outer surface of the RFEA, and wherein the set of holes is offset from the center point of the RFEA.

10. The device of claim 1, wherein the housing comprises aluminum, aluminum nitride, sintered aluminum nitride powder, ceramic, light metal alloy, or machinable glass.

11. A method for characterizing plasma within a chamber, the method comprising: The sensor device is delivered to the chamber without venting, wherein the sensor device comprises: shell; Plasma sensor, the plasma sensor being mounted on the housing; and A computing system, located within the housing, wherein the computing system includes a battery, a processor, and a wireless communication system; The plasma characteristics within the chamber are measured using the sensor device; and The sensor device is removed from the chamber without venting the chamber.

12. The method of claim 11, further comprising: A device for transmitting data related to the plasma characteristics to the outside of the cavity using the wireless communication system.

13. The method of claim 11, further comprising: The sensor device is activated in response to a wake-up signal from an external device and / or data is transmitted between the sensor device and the external device.

14. The method of claim 11, further comprising: When the sensor device determines that the temperature is higher than the critical temperature limit, a temperature alarm is transmitted from the sensor device to an external device. and In response to the temperature alarm, plasma processing within the chamber is stopped.

15. The method of claim 14, wherein the critical temperature is 80°C or higher.

16. The method of claim 14, wherein the sensor device is delivered to a cooling chamber after the plasma processing is stopped.

17. A semiconductor processing tool, the tool comprising: Factory interface; Transfer chamber; Load locking, wherein the load locking is coupled between the plant interface and the transfer chamber; and A processing chamber coupled to the transfer chamber, wherein the processing chamber comprises: A base for supporting a substrate; An exhaust line for removing gas from the processing chamber; A plasma source, said plasma source being opposite to said base; and An antenna is located within the processing chamber, wherein the antenna has a wired connection to the outside of the processing chamber.

18. The semiconductor processing tool of claim 17, wherein the antenna is located within the exhaust line.

19. The semiconductor processing tool of claim 17, wherein the antenna is on or inside the base, and / or wherein the antenna is away from the plasma source.

20. The semiconductor tool of claim 17, wherein the base includes an electrostatic chuck with thermal control configured to limit the temperature of the sensor device.

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