A method for cleaning and degreasing a grid-like semiconductor silicon component

Abstract

The application discloses a kind of grid type semiconductor silicon components' degreasing cleaning method, belong to semiconductor device manufacturing technical field.The method includes the following steps: S1: in the first cleaning tank, first bubble cleaning is carried out;S2: in the second cleaning tank, flushing is carried out;S3: in the third cleaning tank, second bubble cleaning is carried out;S4: in the second cleaning tank, flushing is carried out;S5: in the fourth cleaning tank, third bubble cleaning is carried out;S6: in the fifth cleaning tank, flushing is carried out;S7 drying;Wherein, S1 step, S3 step and S5 step, the front and back of silicon component are cleaned respectively, and the first cleaning tank, third cleaning tank, fourth cleaning tank all have circulation filtering function.The method of the application is easy to operate, equipment is simple, cleaning agent cost is low, and cleaning effect is good, cleanliness is high, can effectively guarantee the consistency and yield of grid type semiconductor silicon component.

Description

Technical Field

[0001] This application relates to the field of semiconductor device manufacturing technology, and in particular to a degreasing and cleaning method for grid-type semiconductor silicon components. Background Technology

[0002] Silicon components are widely used in semiconductor manufacturing. They are susceptible to contamination during manufacturing, use, and transfer. However, semiconductor manufacturing demands high overall cleanliness from these components, making thorough cleaning crucial. Cleaning methods vary depending on the shape of the silicon component. For grid-type silicon components, alkaline cleaning agents combined with ultrasonic cleaning are currently the primary method. However, this method requires multiple cleaning steps, frequent agent changes, and a cumbersome overall process. Furthermore, ultrasonic cleaning can easily cause hidden damage and cracks to grid-type semiconductor silicon components. Therefore, there is an urgent need to develop a simple, low-cost cleaning method for grid-type semiconductor silicon components that offers high cleaning efficiency and yields high-quality products. Summary of the Invention

[0003] This application provides a degreasing and cleaning method for grid-type semiconductor silicon components, which has the advantages of being easy to operate, having simple equipment, and using low-cost cleaning agents. At the same time, it has good cleaning effect and high cleanliness, which can effectively ensure the consistency and yield of grid-type semiconductor silicon components.

[0004] This application provides a degreasing and cleaning method for a grid-type semiconductor silicon component, comprising the following steps: S1: placing the grid-type semiconductor silicon component in a first cleaning tank and performing a first bubbling cleaning in water; S2: placing the grid-type semiconductor silicon component treated in S1 in a second cleaning tank and rinsing it with water; S3: placing the grid-type semiconductor silicon component treated in S2 in a third cleaning tank and performing a second bubbling cleaning in a mixed solvent; S4: placing the grid-type semiconductor silicon component treated in S3 back into the second cleaning tank and rinsing it with water. S5: Place the grid-type semiconductor silicon component processed in S4 into the fourth cleaning tank and perform a third bubbling cleaning in water; S6: Place the grid-type semiconductor silicon component processed in S5 into the fifth cleaning tank and rinse with water; S7: Dry the grid-type semiconductor silicon component processed in S6; wherein, in steps S1, S3 and S5, the front side of the grid-type semiconductor silicon component is cleaned, and the back side of the grid-type semiconductor silicon component is cleaned; the first cleaning tank, the third cleaning tank and the fourth cleaning tank all have a circulating filtration function.

[0005] In the above technical solution, by setting up a process flow of alternating bubbling cleaning and rinsing, and performing front-side and back-side flipping cleaning of the grid-type semiconductor silicon components in steps S1, S3, and S5, the cleaning solvent can fully contact and penetrate into every dead corner area of ​​the grid structure, effectively removing particles, grease, and residues from the manufacturing process hidden in the trenches and countersunk holes. Simultaneously, the first, third, and fourth cleaning tanks have a circulating filtration function, which can filter out contaminants shed during the cleaning process, keeping the liquid in the tanks clean, significantly extending the service life of the cleaning solvent and water, reducing the frequency of liquid changes and cleaning costs, and effectively ensuring the consistency and yield of the grid-type semiconductor silicon components while maintaining high cleanliness.

[0006] In some embodiments, at least one of the following conditions is met in step S1: (1) The water temperature is 85-90℃; (2) The compressed air input pressure for bubbling is 0.1-0.3 MPa; (3) The front cleaning time is 10-20 minutes; (4) The reverse side cleaning time is 10-20 minutes; (5) Change the water every 20 grid-type semiconductor silicon components cleaned.

[0007] In the above technical solution, the impact of high-temperature water and compressed air bubbles can initially clean and remove serious contaminants such as grease, wax, glue, and process materials attached to the surface of grid-type semiconductor silicon components. Sufficient cleaning time on both the front and back sides ensures that all parts of the grid are thoroughly cleaned, and a reasonable water change frequency reduces water consumption and energy consumption while ensuring cleanliness and yield.

[0008] In some embodiments, the water temperature is 60-70°C in steps S2 and S4; and the water temperature is 45-60°C in step S6.

[0009] In the above technical solution, hot water can quickly rinse away most of the contaminants remaining on the surface of the grid-type semiconductor silicon component after the first bubbling cleaning, most of the solvent remaining on the surface after the second bubbling cleaning, and the remaining solvent residue on the surface after the third bubbling cleaning. While ensuring high cleanliness, it effectively ensures the consistency and yield of the grid-type semiconductor silicon component.

[0010] In some embodiments, in step S3, the mixed solvent satisfies at least one of the following conditions: (1) The mixed solvent includes cleaning agent and water; the cleaning agent includes sodium metasilicate, sulfonate, carbonate, phosphate and surfactant; the volume ratio of cleaning agent to water is 1:400; (2) The pH value of the mixed solvent is 9-10, and the temperature is 85-90℃; (3) Replace the mixed solvent every 100 grid-type semiconductor silicon components cleaned.

[0011] In the above technical solution, by controlling the formulation and temperature of the mixed solvent, the activity of the cleaning agent can be fully activated, enabling it to effectively remove stubborn organic oil stains, suspended dust and organic process substances from the surface of grid-type semiconductor silicon components, while avoiding corrosion of the grid-type semiconductor silicon components. Under the premise of ensuring high cleanliness and yield, the consumption of mixed solvent is greatly reduced.

[0012] In some embodiments, at least one of the following conditions is met in step S3: (1) The compressed air input pressure for bubbling is 0.1-0.3 MPa; (2) The front cleaning time is 5-10 minutes; (3) The reverse side cleaning time is 5-10 minutes.

[0013] In the above technical solution, the impact of compressed air bubbles combined with sufficient cleaning time on both the front and back sides can effectively remove dirt from various characteristic dead corners of grid-type semiconductor silicon components, such as grid grooves and countersunk holes, ensuring that all parts of the grid are thoroughly cleaned. While ensuring high cleanliness, this effectively guarantees the consistency and yield of grid-type semiconductor silicon components.

[0014] In some embodiments, at least one of the following conditions is met in step S5: (1) The water temperature is 45-60℃; (2) The compressed air input pressure for bubbling is 0.1-0.3 MPa; (3) The front cleaning time is 5-15 minutes; (4) The reverse side cleaning time is 5-15 minutes; (5) Change the water every 10 grid-type semiconductor silicon components cleaned.

[0015] In the above technical solution, the impact of water and compressed air bubbles can dilute and clean the small amount of cleaning agent remaining on the surface of grid-type semiconductor silicon components, thereby reducing water consumption and energy consumption while ensuring high cleanliness and yield.

[0016] In some embodiments, in step S7, the drying temperature is 80-100°C and the time is 20-40 min.

[0017] The above technical solution can quickly dry the water stains remaining on the characteristic surfaces such as the grid of the grid-type semiconductor silicon device, ensuring high cleanliness while effectively guaranteeing the consistency and yield of the grid-type semiconductor silicon device.

[0018] In some embodiments, in steps S1, S3 and S5, a first tooling is used to support the grid-type semiconductor silicon component; preferably, the inclined support block of the first tooling forms a point-line contact support with the lower surface or the outer diameter of the lower surface of the grid-type semiconductor silicon component.

[0019] The above technical solution can effectively avoid the formation of irremovable marks due to contact between the grid-type semiconductor silicon component and the tooling surface. While ensuring high cleanliness, it can effectively guarantee the consistency and yield of the grid-type semiconductor silicon component.

[0020] In some embodiments, in steps S2, S4 and S6, a second tooling is used to support the grid-like semiconductor silicon component; preferably, the second tooling has a V-shaped structure.

[0021] The above technical solution can ensure the stable vertical placement of grid-type semiconductor silicon components during the rinsing process, while minimizing the obstruction of the grid-type semiconductor silicon component surface by the tooling. This improves rinsing efficiency and uniformity, and effectively guarantees the overall cleanliness, consistency and yield of the grid-type semiconductor silicon components.

[0022] In some embodiments, steps S1 to S6 are performed in the five-tank cleaning device. The five-tank cleaning device includes a first cleaning tank, a second cleaning tank, a third cleaning tank, a fourth cleaning tank, and a fifth cleaning tank. The first cleaning tank has a first main cleaning tank and a first auxiliary cleaning tank. The bottom of the first main cleaning tank is equipped with a compressed air bubbling pipe, and the first auxiliary cleaning tank is connected to the first main cleaning tank via a water pump and a filter tank. The third cleaning tank has a third main cleaning tank and a third auxiliary cleaning tank. The bottom of the third main cleaning tank is equipped with a compressed air bubbling pipe, and the third auxiliary cleaning tank is connected to the third main cleaning tank via a water pump and a filter tank. The fourth cleaning tank has a fourth main cleaning tank and a fourth auxiliary cleaning tank. The bottom of the fourth main cleaning tank is equipped with a compressed air bubbling pipe, and the fourth auxiliary cleaning tank is connected to the fourth main cleaning tank via a water pump and a filter tank. The filter tank contains a filter element. The second cleaning tank has a second main cleaning tank and a second auxiliary cleaning tank, and the second auxiliary cleaning tank is connected to a rinsing water gun. The fifth cleaning tank has a fifth main cleaning tank and a fifth auxiliary cleaning tank, and the fifth auxiliary cleaning tank is connected to a rinsing water gun and a compressed air gun.

[0023] In the above technical solution, the entire cleaning process can be completed using a single-function five-tank cleaning device. The cleaning equipment is simple and effectively reduces the cost of equipment use.

[0024] This application has the following beneficial effects: 1. The entire cleaning process can be completed using a single-function five-tank cleaning device, which simplifies the cleaning equipment and effectively reduces equipment operating costs.

[0025] 2. The total cleaning time for a single grid-type semiconductor silicon component is approximately 85-135 minutes. The overall cleaning process is simple and convenient, effectively improving cleaning efficiency.

[0026] 3. Through effective cleaning agent formulation and circulating filtration function, the replacement frequency of mixed solvent can be controlled to ≥100 pieces / time, which greatly reduces the amount of cleaning agent and water used.

[0027] 4. The use of first and second tooling avoids large-area contact between the grid-type semiconductor silicon components and the tooling surface, thus preventing the formation of indelible marks and ensuring the consistency and yield of the grid-type semiconductor silicon components.

[0028] 5. The timed flipping and bubbling cleaning method is used instead of ultrasonic cleaning, which avoids the formation of hidden damage and cracks caused by ultrasonic cleaning. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 A flowchart of a degreasing and cleaning method for a grid-type semiconductor silicon device is provided in this application; Figure 2 A schematic diagram of the structure of the first tooling provided in this application; Figure 3 A schematic diagram of the structure of the second tooling provided in this application.

[0031] Explanation of reference numerals in the attached drawings: 1. First tooling; 11. Inclined support block; 2. Second tooling; 21. Support rod; 22. Side plate. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0033] In existing technologies, the cleaning of grid-type semiconductor silicon components often uses alkaline cleaning agents supplemented by ultrasonic cleaning, which can easily cause hidden damage or cracks to precision silicon components, affecting the yield and reliability of grid-type semiconductor silicon components. In addition, the cleaning agent needs to be changed frequently, resulting in a large consumption of cleaning agent.

[0034] To address the aforementioned technical problems, this application proposes a degreasing and cleaning method for grid-type semiconductor silicon components, employing a process that alternates between multiple bubbling cleaning and intermediate rinsing, such as... Figure 1 As shown, by combining a circulating filtration function and an optimized cleaning agent formulation, simple cleaning equipment can effectively remove dirt from the dead corners of the grid, reducing cleaning agent and water consumption. While ensuring high cleanliness, it effectively guarantees the consistency and yield of grid-type semiconductor silicon components. Specifically, the degreasing and cleaning method for grid-type semiconductor silicon components of this application includes the following steps: S1: Place the grid-type semiconductor silicon component in the first cleaning tank and perform the first bubbling cleaning in water.

[0035] Specifically, in this step, a first fixture is used to support the grid-type semiconductor silicon component during the first bubbling cleaning process; preferably, the inclined support block of the first fixture forms a point-line contact support with the lower surface or the outer diameter of the lower surface of the grid-type semiconductor silicon component; during the first bubbling cleaning, the water level is above the first fixture.

[0036] like Figure 2 As shown, the first fixture 1 is provided with at least two inclined support blocks 11. For example, the first fixture is provided with 6 inclined support blocks to form a regular hexagon. When the grid-type semiconductor silicon component is placed on the first fixture, the inclined support blocks of the first fixture form point-line contact support with the lower surface or the outer diameter of the lower surface of the grid-type semiconductor silicon component. This can effectively prevent the grid-type semiconductor silicon component from contacting the surface of the first fixture and producing indelible marks. While ensuring high cleanliness, it effectively ensures the consistency and yield of the grid-type semiconductor silicon component.

[0037] In some embodiments of this application, the water temperature during the first bubbling cleaning is 85-90°C, for example, it can be a value within the range of 85°C, 86°C, 87°C, 88°C, 89°C, 90°C, or any two of these ranges. When the water temperature during the first bubbling cleaning meets the above range, it can effectively soften and peel off stubborn contaminants such as grease, wax, adhesive, and organic process substances adhering to the surface of the grid-type semiconductor silicon device, laying a good foundation for subsequent cleaning.

[0038] In some embodiments of this application, the compressed air input pressure during the first bubbling cleaning is 0.1-0.3 MPa, for example, it can be a value within the range of 0.1 MPa, 0.2 MPa, 0.3 MPa, or any two of these. When the compressed air input pressure during the first bubbling cleaning meets the above range, sufficient impact force can be generated to initially clean and remove severe contaminants such as grease, wax, adhesive, and process residues adhering to the surface of the grid-type semiconductor silicon device, while avoiding damage to the silicon device.

[0039] In addition, in some embodiments of this application, the first bubbling cleaning also includes front cleaning of the front side of the grid-type semiconductor silicon component and back cleaning of the back side of the grid-type semiconductor silicon component.

[0040] In some embodiments of this application, the front-side cleaning time of the first bubbling cleaning is 10-20 minutes, for example, it can be a value within the range of 10 minutes, 12 minutes, 14 minutes, 16 minutes, 18 minutes, 20 minutes, or any two of these. When the front-side cleaning time of the first bubbling cleaning meets the above range, contaminants on the front side and within the grid of the gate-type semiconductor silicon device can be sufficiently removed.

[0041] In some embodiments of this application, the reverse cleaning time of the first bubbling cleaning is 10-20 minutes; for example, it can be a value within the range of 10 minutes, 12 minutes, 14 minutes, 16 minutes, 18 minutes, 20 minutes, or any two of these. When the reverse cleaning time of the first bubbling cleaning meets the above range, contaminants on the reverse side and within the grid of the gate-type semiconductor silicon device can be sufficiently removed.

[0042] In some embodiments of this application, in order to reduce water consumption and energy consumption while ensuring cleanliness and yield during the first bubbling cleaning, the water is replaced every 20 grid-type semiconductor silicon components cleaned.

[0043] S2: Place the grid-type semiconductor silicon component processed in S1 into the second cleaning tank and rinse it with water.

[0044] Specifically, in this step, a second fixture is used to support the grid-type semiconductor silicon component during the rinsing process; preferably, the second fixture has a V-shaped structure.

[0045] like Figure 3As shown, the second fixture 2 is provided with a support rod 21 and a side plate 22, with both ends of the support rod 21 fixed to the side plate 22; the second fixture is provided with at least two support rods, for example, the second fixture is provided with four support rods, of which two support rods 21 are provided at the lower part of the second fixture 2 and two support rods 21 are provided at the upper part of the second fixture 2; the distance between the two support rods 21 located at the upper part is greater than the distance between the support rods 21 located at the lower part, so that the support rods 21 and the side plate 22 form a V-shaped structure. When the grid-type semiconductor silicon component is placed on the second fixture with the V-shaped structure, the shielding of the grid-type semiconductor silicon component surface by the second fixture can be minimized. While improving the rinsing efficiency and uniformity, it effectively ensures the overall cleanliness, consistency and yield of the grid-type semiconductor silicon component.

[0046] In some embodiments of this application, the water temperature during rinsing is 60-70°C, for example, it can be a value within the range of 60°C, 62°C, 64°C, 66°C, 68°C, 70°C, or any two of these. When the water temperature meets the above range, most of the contaminants remaining on the surface of the grid-type semiconductor silicon component after the first bubbling cleaning can be quickly rinsed away.

[0047] S3: Place the grid-type semiconductor silicon component treated in S2 into the third cleaning tank and perform a second bubbling cleaning in a mixed solvent.

[0048] Specifically, in this step, the first fixture is used to support the grid-type semiconductor silicon device during the second bubbling cleaning process. Preferably, the inclined support block of the first fixture forms a point-line contact support with the lower surface or outer diameter of the lower surface of the grid-type semiconductor silicon device. When the grid-type semiconductor silicon device is placed on the first fixture, it can effectively avoid contact between the grid-type semiconductor silicon device and the surface of the first fixture, thus preventing the generation of indelible marks. While ensuring high cleanliness, it effectively guarantees the consistency and yield of the grid-type semiconductor silicon device. During the second bubbling cleaning, the liquid level of the mixed solvent exceeds the first fixture.

[0049] In some embodiments of this application, in order to achieve the best cleaning effect and cover most contaminant cleaning scenarios, the mixed solvent used in the second bubbling cleaning includes a cleaning agent and water; the cleaning agent includes sodium metasilicate, sulfonate, carbonate, phosphate and surfactant; the volume ratio of cleaning agent to water is 1:400; the liquid level of the mixed solvent is above the first tooling.

[0050] In some embodiments of this application, in order to prevent corrosion of lattice-type semiconductor silicon components, the pH value of the mixed solvent is 9-10, for example, it can be a value within the range of 9, 9.5, 10 or any two thereof.

[0051] In some embodiments of this application, in order to fully activate the activity of the cleaning agent, the temperature of the mixed solvent is 85-90°C, for example, it can be a value within the range of 85°C, 86°C, 87°C, 88°C, 89°C, 90°C or any two of them.

[0052] In some embodiments of this application, in order to greatly reduce the consumption of mixed solvent while ensuring high cleanliness and yield, the mixed solvent is replaced every 100 grid-type semiconductor silicon components cleaned.

[0053] In some embodiments of this application, the compressed air input pressure during the second bubbling cleaning is 0.1-0.3 MPa, for example, it can be a value within the range of 0.1 MPa, 0.2 MPa, 0.3 MPa, or any two thereof. When the compressed air input pressure during the second bubbling cleaning meets the above range, stubborn contaminants adhering to the surface of the grid-type semiconductor silicon device can be further cleaned and removed, while avoiding damage to the silicon device.

[0054] In addition, in some embodiments of this application, the second bubbling cleaning also performs front cleaning on the front side of the grid-type semiconductor silicon component and back cleaning on the back side of the grid-type semiconductor silicon component.

[0055] In some embodiments of this application, the front cleaning time of the second bubbling cleaning is 5-10 minutes, for example, it can be a value within the range of 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, or any two of these. When the front cleaning time of the second bubbling cleaning meets the above range, it can effectively remove dirt from various feature dead corners of grid-type semiconductor silicon components, such as grid grooves and countersunk holes.

[0056] In some embodiments of this application, the reverse cleaning time of the second bubbling cleaning is 5-10 minutes, for example, it can be a value within the range of 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, or any two of these. When the reverse cleaning time of the second bubbling cleaning meets the above range, dirt in various feature dead corners of grid-type semiconductor silicon components, such as grid grooves and countersunk holes, can be effectively removed.

[0057] S4: Place the grid-type semiconductor silicon component processed in S3 back into the second cleaning tank and rinse it with water.

[0058] Specifically, in this step, a second fixture is used to support the grid-type semiconductor silicon component during the rinsing process; preferably, the second fixture has a V-shaped structure. When the grid-type semiconductor silicon component is placed on the V-shaped second fixture, the shading of the grid-type semiconductor silicon component surface by the second fixture can be minimized, thereby improving rinsing efficiency and uniformity while effectively ensuring the overall cleanliness, consistency, and yield of the grid-type semiconductor silicon component.

[0059] In some embodiments of this application, the water temperature during rinsing is 60-70°C, for example, it can be a value within the range of 60°C, 62°C, 64°C, 66°C, 68°C, 70°C, or any two of these. When the water temperature meets the above range, most of the solvent remaining on the surface of the gate-type semiconductor silicon component after the second bubbling cleaning can be quickly rinsed away.

[0060] S5: Place the grid-type semiconductor silicon component processed in S4 into the fourth cleaning tank and perform a third bubbling cleaning in water.

[0061] Specifically, in this step, the first fixture is used to support the grid-type semiconductor silicon device during the third bubbling cleaning process. Preferably, the inclined support block of the first fixture forms a point-line contact support with the lower surface or outer diameter of the lower surface of the grid-type semiconductor silicon device. When the grid-type semiconductor silicon device is placed on the first fixture, it can effectively avoid contact between the grid-type semiconductor silicon device and the surface of the first fixture, thus preventing the generation of indelible marks. While ensuring high cleanliness, it effectively guarantees the consistency and yield of the grid-type semiconductor silicon device. During the third bubbling cleaning, the water level exceeds the first fixture.

[0062] In some embodiments of this application, the water temperature during the third bubbling rinse is 45-60°C, for example, it can be a value within the range of 45°C, 46°C, 48°C, 50°C, 52°C, 54°C, 56°C, 58°C, 60°C, or any two of these ranges. When the water temperature during the third bubbling rinse meets the above range, it can effectively dilute and remove the small amount of cleaning agent remaining from the previous steps.

[0063] In some embodiments of this application, the compressed air input pressure during the third bubbling cleaning is 0.1-0.3 MPa, for example, it can be a value within the range of 0.1 MPa, 0.2 MPa, 0.3 MPa, or any two thereof. When the compressed air input pressure during the third bubbling cleaning meets the above range, sufficient impact force can be generated to dilute and clean the small amount of cleaning agent remaining on the surface of the grid-type semiconductor silicon device, while avoiding damage to the silicon device.

[0064] In addition, in some embodiments of this application, the third bubbling cleaning also performs front cleaning on the front side of the grid-type semiconductor silicon component and back cleaning on the back side of the grid-type semiconductor silicon component.

[0065] In some embodiments of this application, the front-side cleaning time of the third bubbling cleaning is 5-15 minutes, for example, it can be a value within the range of 5 minutes, 6 minutes, 8 minutes, 10 minutes, 12 minutes, 15 minutes, or any two of these. When the front-side cleaning time of the third bubbling cleaning meets the above range, it can ensure that the trace amounts of cleaning agent remaining in the front-side grid of the grid-type semiconductor silicon device are fully rinsed.

[0066] In some embodiments of this application, the reverse cleaning time of the third bubbling cleaning is 5-15 minutes, for example, it can be a value within the range of 5 minutes, 6 minutes, 8 minutes, 10 minutes, 12 minutes, 15 minutes, or any two of these. When the reverse cleaning time of the third bubbling cleaning meets the above range, it can ensure that the trace amounts of cleaning agent remaining in the reverse grid of the grid-type semiconductor silicon device are fully rinsed.

[0067] In some embodiments of this application, in order to ensure the cleanliness of the water during the third bubbling cleaning, the water is changed once every 10 grid-type semiconductor silicon components are cleaned.

[0068] S6: Place the grid-type semiconductor silicon component processed in S5 into the fifth cleaning tank and rinse it with water.

[0069] Specifically, in this step, a second fixture is used to support the grid-type semiconductor silicon component during the rinsing process; preferably, the second fixture has a V-shaped structure. When the grid-type semiconductor silicon component is placed on the V-shaped second fixture, the shading of the grid-type semiconductor silicon component surface by the second fixture can be minimized, thereby improving rinsing efficiency and uniformity while effectively ensuring the overall cleanliness, consistency, and yield of the grid-type semiconductor silicon component.

[0070] In some embodiments of this application, the water temperature during rinsing is 45-60°C, for example, it can be a value within the range of 45°C, 46°C, 48°C, 50°C, 52°C, 54°C, 56°C, 58°C, 60°C, or any combination thereof. When the water temperature meets the above range, the remaining cleaning agent remaining on the surface of the grid-type semiconductor silicon device after the third bubbling cleaning can be quickly rinsed away.

[0071] In some embodiments of this application, in order to remove most of the residual moisture on the surface of the grid-type semiconductor silicon component, shorten the subsequent drying time and prevent water stains, after rinsing, an air gun is used to blow away most of the moisture on the surface of the silicon component.

[0072] S7: Dry the grid-type semiconductor silicon components processed in S6.

[0073] In this step, an oven is used, with nitrogen-assisted drying. During drying, the grid-type semiconductor silicon components are placed perpendicular to the air convection direction of the oven to ensure that the convective air can effectively pass through the grid grooves and quickly dry any residual water stains on the grid and other feature surfaces of the silicon components.

[0074] In some embodiments of this application, the drying temperature is 80-100°C, for example, it can be a value within the range of 80°C, 85°C, 90°C, 95°C, 100°C, or any two of these. When the drying temperature meets the above range, it can ensure that moisture on the surface and in the dead corners of the grid-type semiconductor silicon device evaporates quickly.

[0075] In some embodiments of this application, the drying time is 20-40 minutes, which can be a value within the range of 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes, or any two of these. When the drying time meets the above range, it can be ensured that water stains inside and on the surface of the grid-type semiconductor silicon device are sufficiently removed.

[0076] It should be noted that the entire cleaning process of this application is carried out in a Class 1000 cleanroom; steps S1 to S6 are all performed in a five-tank cleaning device, each tank having a clearly defined function to avoid cross-contamination and achieve a highly efficient and clean cleaning process. This five-tank cleaning device includes a first cleaning tank, a second cleaning tank, a third cleaning tank, a fourth cleaning tank, and a fifth cleaning tank; each tank is made of 304 stainless steel.

[0077] The first cleaning tank is equipped with a first main cleaning tank and a first auxiliary cleaning tank, both of which have heating functions. The bottom of the first main cleaning tank is equipped with a compressed air bubbling pipeline, which can perform compressed air bubbling. The first auxiliary cleaning tank is connected to the first main cleaning tank through a water pump and a filter tank. The filter tank is equipped with a 10μm filter element.

[0078] The second cleaning tank is equipped with a second main cleaning tank and a second auxiliary cleaning tank. The second auxiliary cleaning tank has a heating function and is connected to a rinsing water gun, which can rinse grid-type semiconductor silicon components.

[0079] The third cleaning tank is equipped with a third main cleaning tank and a third auxiliary cleaning tank, both of which have heating functions; the bottom of the third main cleaning tank is equipped with a compressed air bubbling pipeline, which can perform compressed air bubbling; the third auxiliary cleaning tank is connected to the third main cleaning tank through a water pump and a filter tank; the filter tank is equipped with a 10μm filter element.

[0080] The fourth cleaning tank is equipped with a fourth main cleaning tank and a fourth auxiliary cleaning tank, both of which have heating functions; the bottom of the fourth main cleaning tank is equipped with a compressed air bubbling pipeline, which can perform compressed air bubbling; the fourth auxiliary cleaning tank is connected to the fourth main cleaning tank through a water pump and a filter tank; the filter tank is equipped with 1-5μm filter elements.

[0081] The fifth cleaning tank is equipped with a fifth main cleaning tank and a fifth auxiliary cleaning tank. The fifth auxiliary cleaning tank has a heating function and is connected to a rinsing water gun and a compressed air gun, which can rinse and blow grid-type semiconductor silicon components.

[0082] The first, third, and fourth cleaning tanks all have a circulating filtration function.

[0083] Taking the first cleaning tank as an example, during the cleaning process, the first main cleaning tank is filled with water, and the water level is higher than the overflow port. The water in the upper layer of the first main cleaning tank flows naturally into the first auxiliary cleaning tank through the overflow port, carrying away the detached contaminants. The water pump in the first auxiliary cleaning tank draws the water containing contaminants and sends it to the filter tank. The 10μm-level filter element in the filter tank intercepts particles larger than 10μm. The filtered clean water returns to the first main cleaning tank, forming a circulation loop of "first main cleaning tank → first auxiliary cleaning tank → filtration → first main cleaning tank", thereby realizing online water filtration and recycling. During the cleaning process, this circulation continues to ensure that the water in the first main cleaning tank always maintains a high level of cleanliness, thereby extending the water replacement cycle and reducing water consumption.

[0084] Taking the third cleaning tank as an example, during the cleaning process, the main third cleaning tank contains a mixed solvent, with the solvent level higher than the overflow port. The upper layer of mixed solvent in the main third cleaning tank flows naturally into the auxiliary third cleaning tank through the overflow port, simultaneously carrying away the detached contaminants. A pump in the auxiliary third cleaning tank extracts the mixed solvent containing contaminants and sends it to a filter tank. The 10μm-level filter element in the filter tank intercepts particles larger than 10μm. The filtered clean mixed solvent returns to the main third cleaning tank, forming a loop of "main third cleaning tank → auxiliary third cleaning tank → filtration → main third cleaning tank," thus achieving online filtration and recycling of the mixed solvent. This loop continues throughout the cleaning process, ensuring that the mixed solvent in the main third cleaning tank maintains a high level of cleanliness, thereby extending the solvent replacement cycle and reducing cleaning agent consumption.

[0085] The fourth cleaning tank's circulating filtration function works in the same way as the first cleaning tank. During the cleaning process, the fourth main cleaning tank is filled with water, with the water level higher than the overflow port. The upper layer of water in the fourth main cleaning tank flows naturally into the fourth auxiliary cleaning tank through the overflow port, carrying away the detached contaminants. The water pump in the fourth auxiliary cleaning tank draws the water containing contaminants and sends it to the filter tank. The 1-5μm filter cartridges in the filter tank intercept particles larger than 5μm. The filtered clean water returns to the fourth main cleaning tank, forming a circulation loop of "fourth main cleaning tank → fourth auxiliary cleaning tank → filtration → fourth main cleaning tank," thus achieving online water filtration and recycling. This circulation continues throughout the cleaning process, ensuring that the water in the fourth main cleaning tank always maintains a high level of cleanliness.

[0086] The present application will be further described in detail below with reference to the embodiments.

[0087] Example 1 The degreasing and cleaning method for the grid-type semiconductor silicon component in this embodiment includes the following steps: S1: Place the grid-type semiconductor silicon component face up on the first fixture and put it in the first cleaning tank. The tank is filled with deionized water, the liquid level is above the fixture, the water temperature is 88℃, the compressed air input pressure for bubbling is 0.2MPa, the front side is cleaned for 15 minutes, and the back side is cleaned for 15 minutes. S2: Transfer the grid-type semiconductor silicon component processed in S1 to the second cleaning tank, support it with the second tooling, and rinse it with deionized water at 65°C. S3: Place the grid-type semiconductor silicon component treated in S2 flat on the first fixture and place it in the third cleaning tank. The tank is filled with a mixed solvent (cleaning agent: deionized water = 1:400, the cleaning agent contains sodium metasilicate, sulfonate, carbonate, phosphate and surfactant, pH value 9.5), the liquid level is above the fixture, the temperature of the mixed solvent is 85℃, the input pressure of the bubbling compressed air is 0.2MPa, the front side is cleaned for 8 minutes, and the back side is cleaned for 8 minutes. S4: Place the grid-type semiconductor silicon component processed in S3 back into the second cleaning tank, support it with the second tooling, and rinse it with deionized water at 65°C. S5: Place the grid-type semiconductor silicon component processed in S4 flat on the first fixture and place it in the fourth cleaning tank. The tank is filled with deionized water, the liquid level is above the fixture, the water temperature is 55℃, the compressed air input pressure for bubbling is 0.2MPa, the front side is cleaned for 10 minutes, and the back side is cleaned for 10 minutes. S6: Place the grid-type semiconductor silicon component processed in S5 into the fifth cleaning tank, support it with the second tooling, rinse it with 55°C deionized water, and then blow away the surface moisture with a compressed air gun. S7: Place the grid-type semiconductor silicon component processed in S6 into an oven and dry it with nitrogen assistance. The grid-type semiconductor silicon component is placed perpendicular to the air convection direction. The drying temperature is 90℃ and the time is 30min.

[0088] Example 2 The difference from Example 1 is as follows: S1: Water temperature 85℃; S2: Rinse water temperature 60℃; S3: Mixed solvent temperature 85℃; S4: Rinse water temperature 60℃; S5: Water temperature 45℃; S6: Rinse water temperature 45℃.

[0089] Example 3 The difference from Example 1 is as follows: S1: Water temperature 90℃; S2: Rinse water temperature 70℃; S3: Mixed solvent temperature 90℃; S4: Rinse water temperature 70℃; S5: Water temperature 60℃; S6: Rinse water temperature 60℃.

[0090] Example 4 The difference from Example 1 is as follows: S1: Clean the front side for 10 minutes, then clean the back side for 10 minutes; S3: Clean the front side for 5 minutes, then clean the back side for 5 minutes; S5: Clean the front side for 5 minutes, then clean the back side for 5 minutes.

[0091] Example 5 The difference from Example 1 is as follows: S1: Clean the front side for 20 minutes, then clean the back side for 20 minutes; S3: Clean the front side for 10 minutes, then clean the back side for 10 minutes; S5: Clean the front side for 15 minutes, then clean the back side for 15 minutes.

[0092] Example 6 The difference from Example 1 is as follows: S1: The compressed air input pressure for bubbling is 0.1 MPa; S3: The compressed air input pressure for bubbling is 0.1 MPa; S5: The compressed air input pressure for bubbling is 0.1 MPa.

[0093] Example 7 S1: The input pressure of the bubbling compressed air is 0.3 MPa; S3: The input pressure of the bubbling compressed air is 0.3 MPa; S5: The input pressure of the bubbling compressed air is 0.3 MPa.

[0094] Comparative Example 1 The difference from Example 1 is as follows: Only perform the S1 step (the first bubbling cleaning) once, omit the S3 step and the S5 step, and then directly dry after rinsing through the S2, S4, and S6 steps. The other parameters are the same as those in Example 1.

[0095] Comparative Example 2 The difference from Example 1 is as follows: In the S1 step, the S3 step, and the S5 step, the input pressure of the bubbling compressed air is 0 MPa, that is, the compressed air bubbling function is not turned on, and only static immersion is performed.

[0096] Comparative Example 3 The difference from Example 1 is as follows: In the S1 step, the S3 step, and the S5 step, a planar contact type tooling is adopted, and the grid-like semiconductor silicon component has a large-area contact with the tooling surface.

[0097] Performance Test Cleanliness Test: Visual Inspection: Place the cleaned and dried grid-like semiconductor silicon component under daylight conditions with an illuminance of 800 - 1300 LUX and a color temperature of 6500 K ± 500 K, and visually observe whether there are visible dirt, residues, or water stains on the surface and inside the grid of the grid-like semiconductor silicon component. If there is no obvious dirt, no residue, and no water stain visually, it is considered qualified.

[0098] Particle Detection: Use a dust particle detector to detect the number of particles with a particle size greater than 0.5 μm on the cleaned and dried grid-like semiconductor silicon component. If the number of particles with a particle size greater than 0.5 μm per cubic foot is less than 100, it is considered qualified.

[0099] Surface and Internal Defect Detection: Surface Crack Detection: Place the cleaned and dried grid-like semiconductor silicon component under daylight conditions with an illuminance of 800 - 1300 LUX and a color temperature of 6500 K ± 500 K, and visually observe whether there are cracks, chipped edges, or other surface defects on the grid-like semiconductor silicon component. If there are no cracks, no chipped edges, and no obvious mechanical damage on the surface, it is considered qualified.

[0100] Internal Hidden Damage Detection: Use a short-wave infrared detector to detect whether there are hidden cracks, micro-cracks, voids, or other hidden damages inside the cleaned and dried grid-like semiconductor silicon component. If there are no hidden damages, no cracks, and no voids inside, it is considered qualified.

[0101] The test results of Examples 1 to 7 and Comparative Examples 1 to 3 are shown in Table 1.

[0102] Table 1 Test results for each embodiment and comparative example

[0103] As can be seen from the comparison of Examples 1-7 and Comparative Examples 1-3, the cleaning method of this application can effectively remove dirt from the surface of grid-type semiconductor silicon components and the grid grooves, while avoiding the risk of microcracks and dark damage caused by ultrasonic cleaning, and preventing cleaning marks caused by tooling plane contact. It has the advantages of simple operation, simple equipment, and low cleaning agent cost. At the same time, the cleaning effect is good and the cleanliness is high, which can effectively ensure the consistency and yield of grid-type semiconductor silicon components.

[0104] The comparison between Example 1 and Comparative Example 1 shows that the multi-stage bubbling cleaning and rinsing alternating cleaning process can effectively remove dirt in the dead corners of the grid, with good cleaning effect and high cleanliness, which can effectively ensure the consistency and yield of grid-type semiconductor silicon components.

[0105] The comparison between Example 1 and Comparative Example 2 shows that the impact of compressed air can effectively remove dirt from the surface and various feature dead corners of grid-type semiconductor silicon components, such as grid grooves and countersunk holes, ensuring that all parts of the grid are thoroughly cleaned. While ensuring high cleanliness, it effectively guarantees the consistency and yield of grid-type semiconductor silicon components.

[0106] A comparison of Example 1 and Comparative Example 3 shows that the first tooling using the point-line contact support of this application can effectively prevent the grid-type semiconductor silicon component from contacting the tooling surface and generating indelible marks. While ensuring high cleanliness, it effectively guarantees the consistency and yield of the grid-type semiconductor silicon component.

[0107] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for degreasing and cleaning a grid-type semiconductor silicon component, characterized in that, Includes the following steps: S1: Place the grid-type semiconductor silicon component in the first cleaning tank and perform the first bubbling cleaning in water; S2: Place the grid-type semiconductor silicon component processed in S1 into a second cleaning tank and rinse it with water; S3: Place the grid-type semiconductor silicon component processed in S2 into a third cleaning tank and perform a second bubbling cleaning in a mixed solvent; S4: Place the grid-type semiconductor silicon component processed in S3 back into the second cleaning tank and rinse it with water; S5: Place the grid-type semiconductor silicon component processed in S4 into the fourth cleaning tank and perform a third bubbling cleaning in water; S6: Place the grid-type semiconductor silicon component processed in S5 into the fifth cleaning tank and rinse it with water; S7: Dry the grid-type semiconductor silicon component after processing in S6; Specifically, in steps S1, S3, and S5, the front side of the grid-type semiconductor silicon component is cleaned, and the back side of the grid-type semiconductor silicon component is cleaned. The first cleaning tank, the third cleaning tank, and the fourth cleaning tank all have a circulating filtration function.

2. The cleaning method according to claim 1, characterized in that, In step S1, at least one of the following conditions must be met: (1) The temperature of the water is 85-90℃; (2) The compressed air input pressure for the bubbling is 0.1-0.3 MPa; (3) The front cleaning time is 10-20 minutes; (4) The reverse cleaning time is 10-20 min; (5) Replace the water once every 20 grid-type semiconductor silicon components are cleaned.

3. The cleaning method according to claim 1, characterized in that, In steps S2 and S4, the temperature of the water is 60-70°C; In step S6, the temperature of the water is 45-60°C.

4. The cleaning method according to claim 1, characterized in that, In step S3, the mixed solvent satisfies at least one of the following conditions: (1) The mixed solvent includes cleaning agent and water; The cleaning agent includes sodium metasilicate, sulfonate, carbonate, phosphate and surfactant; The volume ratio of the cleaning agent to the water is 1:400; (2) The pH value of the mixed solvent is 9-10, and the temperature is 85-90℃; (3) Replace the mixed solvent once for every 100 grid-type semiconductor silicon components cleaned.

5. The cleaning method according to claim 1, characterized in that, In step S3, at least one of the following conditions must be met: (1) The compressed air input pressure for the bubbling is 0.1-0.3 MPa; (2) The front cleaning time is 5-10 minutes; (3) The reverse cleaning time is 5-10 min.

6. The cleaning method according to claim 1, characterized in that, In step S5, at least one of the following conditions must be met: (1) The temperature of the water is 45-60℃; (2) The compressed air input pressure for the bubbling is 0.1-0.3 MPa; (3) The front cleaning time is 5-15 minutes; (4) The reverse cleaning time is 5-15 minutes; (5) Replace the water once every 10 grid-type semiconductor silicon components are cleaned.

7. The cleaning method according to claim 1, characterized in that, In step S7, the drying temperature is 80-100℃ and the time is 20-40 minutes.

8. The cleaning method according to claim 1, characterized in that, In steps S1, S3 and S5, a first tooling is used to support the grid-type semiconductor silicon component. Preferably, the inclined support block of the first tooling forms a point-to-line contact support with the lower surface or the outer diameter of the lower surface of the grid-like semiconductor silicon component.

9. The cleaning method according to claim 1, characterized in that, In steps S2, S4 and S6, a second tooling is used to support the grid-type semiconductor silicon component; Preferably, the second tooling has a V-shaped structure.

10. The cleaning method according to claim 1, characterized in that, In the five-tank cleaning device, steps S1 to S6 are performed; The five-tank cleaning device includes a first cleaning tank, a second cleaning tank, a third cleaning tank, a fourth cleaning tank, and a fifth cleaning tank. The first cleaning tank is provided with a first main cleaning tank and a first auxiliary cleaning tank. The bottom of the first main cleaning tank is provided with a compressed air bubbling pipeline. The first auxiliary cleaning tank is connected to the first main cleaning tank through a water pump and a filter tank. The third cleaning tank is provided with a third main cleaning tank and a third auxiliary cleaning tank. The bottom of the third main cleaning tank is provided with a compressed air bubbling pipeline. The third auxiliary cleaning tank is connected to the third main cleaning tank through a water pump and a filter tank. The fourth cleaning tank is provided with a fourth main cleaning tank and a fourth auxiliary cleaning tank. The bottom of the fourth main cleaning tank is provided with a compressed air bubbling pipeline. The fourth auxiliary cleaning tank is connected to the fourth main cleaning tank through a water pump and a filter tank. The filter canister is equipped with a filter element; The second cleaning tank is provided with a second main cleaning tank and a second auxiliary cleaning tank, and the second auxiliary cleaning tank is connected to a rinsing water gun; The fifth cleaning tank is provided with a fifth main cleaning tank and a fifth auxiliary cleaning tank. The fifth auxiliary cleaning tank is connected to a rinsing water gun and a compressed air gun.

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