A thinning apparatus

Abstract

The application discloses a kind of thinning equipment, comprising: equipment front end module is used to realize the in and out of wafer, the equipment front end module is arranged at the front end of the thinning equipment;Grinding module is used to at least two wafers simultaneously rough grinding and / or precision grinding, the grinding module is arranged at the end of the thinning equipment;Polishing module is used to at least two wafers simultaneously chemical mechanical polishing after grinding is completed, the polishing module is adjacent to the grinding module arrangement;Two symmetrical distribution cleaning modules are located between polishing module and equipment front end module;Two symmetrical distribution transmission modules are located at the two sides of polishing module respectively.

Description

[0001] This application is a divisional application of the invention patent application filed on March 16, 2023, with application number 2023102532172. Technical Field

[0002] This invention relates to the field of wafer ultra-precision grinding technology, and more particularly to a thinning device. Background Technology

[0003] Currently, the semiconductor industry manufactures semiconductor chips by forming electronic circuits such as ICs (Integrated Circuits) or LSIs (Large Scale Integrations) on the surface of semiconductor wafers. Before the wafer is diced into semiconductor chips, the back side of the wafer, which is the opposite side of the device side where the electronic circuits are formed, is ground by a grinding and thinning processing device, thereby thinning the wafer to a predetermined thickness.

[0004] In existing wafer thinning equipment, the commonly used wafer processing flow is that a single wafer is processed sequentially through rough grinding, fine grinding, chemical mechanical polishing, and cleaning. During these steps, the wafer can only be fabricated serially and cannot be processed in parallel; therefore, the efficiency of this process has a limit and cannot be further improved. Summary of the Invention

[0005] This invention provides a thinning device that aims to at least solve one of the technical problems existing in the prior art.

[0006] This invention provides a thinning device, comprising:

[0007] A front-end module for implementing wafer loading and unloading is provided at the front end of the thinning equipment.

[0008] A grinding module for simultaneously performing rough grinding and / or fine grinding on at least two wafers, the grinding module being disposed at the end of the thinning equipment;

[0009] A polishing module is used to simultaneously perform chemical mechanical polishing on at least two wafers after grinding is completed, and the polishing module is disposed adjacent to the grinding module;

[0010] Two symmetrically distributed cleaning modules are located between the polishing module and the front-end module of the equipment;

[0011] Two symmetrically distributed transmission modules are located on either side of the polishing module.

[0012] In one embodiment, the grinding module includes a base, a worktable mounted on the base, six fixtures evenly distributed on the worktable, and four grinding components.

[0013] In one embodiment, two of the grinding elements are used to perform rough grinding, and the other two grinding elements are used to perform fine grinding.

[0014] In one embodiment, the support for mounting the grinding element is located in the edge region of the grinding module, or the support for mounting the grinding element is located in the central region of the grinding module.

[0015] In one embodiment, the polishing module includes two wafer storage sections, a polishing disk, a polishing pad adhered to the polishing disk, two carrier heads that adsorb wafers and drive the wafers to rotate, a dresser for dressing the polishing pad, and a liquid supply section for supplying polishing fluid to the surface of the polishing pad.

[0016] In one embodiment, the two transmission modules are located at the edge of the thinning device and arranged parallel to each other along the length of the device.

[0017] In one embodiment, the transmission module includes a first transmission component and a second transmission component. The first transmission component is located near the device front-end module, and the second transmission component is located near the grinding module. The first transmission component is used to transmit wafers between the second transmission component, the polishing module, the cleaning module, and the device front-end module, and the second transmission component is used to transmit wafers between the grinding module, the polishing module, and the first transmission component.

[0018] In one embodiment, the first transmission component includes a front-end robotic arm and a buffer unit.

[0019] In one embodiment, the second transmission component includes a back-end robotic arm.

[0020] In one embodiment, the cleaning module includes a brushing device and a drying device arranged adjacent to each other along the width direction of the thinning device.

[0021] The beneficial effects of the embodiments of the present invention include: enabling parallel chip fabrication and improving production efficiency. Attached Figure Description

[0022] The advantages of the present invention will become clearer and easier to understand through the following detailed description in conjunction with the accompanying drawings, but these drawings are merely illustrative and do not limit the scope of protection of the present invention, wherein:

[0023] Figure 1 A thinning device according to an embodiment of the present invention is shown;

[0024] Figure 2 It shows Figure 1 The working process of the thinning equipment;

[0025] Figure 3A thinning device according to another embodiment of the present invention is shown;

[0026] Figure 4 It shows Figure 3 The working process of the thinning equipment. Detailed Implementation

[0027] The technical solutions of the present invention will be described in detail below with reference to specific embodiments and accompanying drawings. The embodiments described herein are specific implementations of the present invention, used to illustrate the concept of the present invention; these descriptions are explanatory and exemplary, and should not be construed as limiting the implementation methods and scope of protection of the present invention. It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions based on the content disclosed in the claims and specification of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein. It should be understood that, unless specifically stated otherwise, for ease of understanding, the following description of specific embodiments of the present invention is based on the premise that the relevant equipment, devices, components, etc., are in their original static state and are not given external control signals or driving forces.

[0028] Furthermore, it should be noted that the terms used in this application to indicate orientation, such as front, back, up, down, left, right, top, bottom, front, back, horizontal, and vertical, are merely for illustrative purposes and to aid in the understanding of relative positions or directions, and are not intended to limit the orientation of any device or structure.

[0029] To illustrate the technical solution described in this invention, the following description will be provided with reference to the accompanying drawings and embodiments.

[0030] In this application, chemical mechanical polishing is also called chemical mechanical planarization, and wafer is also called wafer, silicon wafer, substrate, etc., with the same meaning and actual function.

[0031] With the rapid development of semiconductor and integrated circuit technologies, the demands on production capacity in semiconductor and integrated circuit manufacturing processes are becoming increasingly stringent. Wafer thinning is a crucial step in semiconductor and integrated circuit manufacturing. Thinning removes excess material from the wafer to improve its mechanical, electrical, and heat dissipation properties, thereby reducing resistance. Simultaneously, thinning facilitates subsequent processes such as dicing, cleaving, and packaging. However, traditional thinning equipment's chemical mechanical polishing (CMP) section can only process one wafer at a time. Even after other processing sections have completed their wafer processing, they must wait for the CMP section to finish before the next wafer can be fed in or received. Since the process sequence for each wafer is fixed, the overall output per unit time becomes a bottleneck during the time-consuming CMP process, resulting in low equipment capacity and low equipment utilization.

[0032] Therefore, such as Figures 1 to 4 As shown, the present invention proposes a thinning device, comprising:

[0033] Equipment front-end module 1 is used to realize the entry and exit of wafers. Equipment front-end module 1 is located at the front end of the thinning equipment. Equipment front-end module 1 is a transition module that realizes the transfer of wafers from the outside to the inside of the equipment, so as to realize the "dry entry and dry exit" of wafers.

[0034] Grinding module 5 is used to simultaneously perform rough grinding and / or fine grinding on at least two wafers. Grinding module 5 is located at the end of the thinning equipment.

[0035] Polishing module 3 is used to simultaneously perform chemical mechanical polishing on at least two wafers after grinding is completed. Polishing module 3 is located adjacent to grinding module 5. Grinding as referred to here means rough grinding and / or fine grinding.

[0036] Two symmetrically distributed cleaning modules 2 are used to clean and dry wafers that have undergone chemical mechanical polishing. The cleaning modules 2 are located between the polishing module 3 and the front-end module 1 of the equipment. The two cleaning modules 2 can clean or dry at least two wafers simultaneously, and the number of wafers that can be cleaned in parallel depends on the number of enclosures set up in the cleaning modules 2.

[0037] Two symmetrically distributed transmission modules 4 are used to transfer wafers between the equipment front-end module 1, grinding module 5, polishing module 3 and cleaning module 2. The two transmission modules 4 are located on both sides of the polishing module 3.

[0038] Understandable Figures 1 to 4 The thinning device shown is merely an example. In other implementations, the grinding module 5 may also include multiple grinding passes, such as 3, 4, or 5 passes. Any such modified embodiments that achieve the parallel wafer fabrication function described in the independent claim should fall within the scope of this application.

[0039] The composition and structure of each module and unit are described in detail below.

[0040] Device front-end module 1:

[0041] The device front-end module 1 includes a wafer storage unit and a first transmission unit (not shown).

[0042] The wafer storage unit is mainly used to store wafers and wafers exchanged between the outside and inside of the thinning equipment. It can be composed of multiple front-opening unified pods (FOUPs), specifically two, three, etc.

[0043] The first transmission unit is mainly used for transferring wafers between the wafer storage unit and other modules, units, and devices, and may include a wafer pick-and-place robot. The wafer pick-and-place robot retrieves wafers to be processed from the wafer storage unit and sends them to the next stage; it can also receive processed wafers and place them into the wafer storage unit. For example, the wafer pick-and-place robot retrieves wafers to be processed from the wafer storage unit and sends them to the transmission module 4; the wafer pick-and-place robot receives processed wafers from the cleaning module 2.

[0044] Grinding Module 5:

[0045] like Figure 1 or Figure 3 As shown, the grinding module 5 includes a base, a worktable 50 mounted on the base, a workstation set on the worktable 50, and a rough grinding unit 51 and / or a fine grinding unit 52 corresponding to the workstation position.

[0046] like Figure 1 or Figure 3 As shown, the worktable 50 can rotate about its vertical central axis. In one embodiment, the surface of the worktable 50 is configured with 6 stations, which are, in sequence along the rotation direction, at least one or more loading and unloading stations, at least one or more rough grinding stations, and at least one or more fine grinding stations; a rough grinding unit 51 and a fine grinding unit 52 are respectively arranged above the rough grinding station and the fine grinding station.

[0047] The various workstations on the worktable 50 are evenly distributed on the turntable. In the 6-workstation scheme provided in this embodiment, the line connecting the center of two adjacent workstations to the center of the worktable 50 forms a 60° angle. Above the rough grinding station and the fine grinding station are corresponding rough grinding unit 51 and fine grinding unit 52, respectively. The rough grinding unit 51 and fine grinding unit 52 are used to perform rough grinding and fine grinding on the surface of the wafer to be ground, respectively. The loading and unloading station is used for loading, unloading, and cleaning of the wafer. By rotating the worktable 50, the wafer enters different workstations to perform different processes. The wafer moves cyclically in the order of loading and unloading station—rough grinding station—fine grinding station—loading and unloading station to be ground one by one, realizing continuous wafer thinning operation.

[0048] like Figure 1 or Figure 3 As shown, specifically, these six stations may include two loading / unloading stations, two rough grinding stations, and two fine grinding stations. The loading / unloading stations are located close to the polishing module 3 to facilitate wafer exchange between the loading / unloading stations and the polishing module 3. Correspondingly, there are two rough grinding units 51 and two fine grinding units 52. This enables the grinding module 5 to process six wafers simultaneously, with each pair of wafers undergoing the same process concurrently, doubling the wafer processing efficiency.

[0049] Each workstation is equipped with six fixtures to hold and rotate the wafer. These fixtures can rotate between the rough grinding, fine grinding, and loading / unloading stations. The fixtures can be implemented using chucks. Each rough grinding unit 51 and each fine grinding unit 52 includes one grinding element, for a total of four grinding elements, performing rough grinding and fine grinding respectively. It is understandable that... Figure 1 or Figure 3 This is just one example; the number of fasteners and grinding parts can also be other natural numbers.

[0050] In one embodiment, the grinding element may include a grinding wheel and a spindle assembly drivenly connected to the grinding wheel, the spindle assembly being used to drive the grinding wheel to rotate and / or move in the vertical direction. The grinding element is mounted on a support.

[0051] In one embodiment, two grinding elements are used to perform rough grinding, and two grinding elements are used to perform fine grinding. These elements can be arranged side-by-side or spaced apart. For example,... Figure 1 or Figure 3 As shown, two grinding parts for rough grinding are arranged adjacent to each other, and two grinding parts for fine grinding are arranged adjacent to each other. Alternatively, one grinding part for fine grinding can be placed between the two grinding parts for rough grinding, that is, each grinding part for rough grinding is adjacent to one grinding part for fine grinding.

[0052] like Figure 1 As shown, in one embodiment, the support base for mounting the grinding parts is located in the edge region of the grinding module 5, that is, the support base is located at the edge of the base, at the end of the thinning device. Multiple grinding parts are located on one side of the support base, extending inwards towards the fixing component. In this embodiment, the support base can be mounted on the base, occupying a large space; therefore, the support base can be designed to be large in volume and mass, which is beneficial for providing a more stable support structure.

[0053] like Figure 3As shown, in another embodiment, the support base for mounting the grinding components is located in the central area of ​​the grinding module 5, that is, the support base is located in the center of the worktable 50, and the various fixing components for adsorbing wafers surround the support base. In this embodiment, each grinding component extends outward around the support base, and the grinding components are exposed with less obstruction, which facilitates the maintenance and repair of the grinding components and provides a large operating space.

[0054] Polishing Module 3:

[0055] like Figure 1 or Figure 3 As shown, the polishing module 3 includes two wafer storage sections 33, a polishing disk 31, a polishing pad adhered to the polishing disk 31, two carrier heads 32 that adsorb wafers and drive the wafers to rotate, a dressing device 34 for dressing the polishing pad, and a liquid supply section 35 for supplying polishing fluid to the surface of the polishing pad.

[0056] like Figure 1 As shown, in one embodiment, the two wafer storage sections 33 and the two carrier heads 32 are symmetrically distributed along the diameter of the polishing disk 31. The two wafer storage sections 33 are adjacent to the grinding module 5 and the transfer module 4. Correspondingly, the dresser 34 and the liquid supply section 35 are located on the other side near the cleaning module 2. Figure 3 As shown, in another embodiment, two chip storage sections 33 and two carrier heads 32 are centrally symmetrically distributed along the central axis of the polishing disk 31. One chip storage section 33 is adjacent to the grinding module 5 and the transmission module 4, respectively, and the other chip storage section 33 is adjacent to the cleaning module 2 and the transmission module 4, respectively. The dresser 34 and the liquid supply section 35 are located circumferentially between different chip storage sections 33.

[0057] This embodiment uses a polishing module 3 with two bearing heads 32, which allows the two bearing heads 32 to work simultaneously, improving the working efficiency of the polishing module 3, reducing the waiting time inside the equipment, and increasing production.

[0058] Before polishing begins, the transfer module 4 transports two wafers to two separate storage sections 33. Two carrier heads 32 load wafers from the storage sections 33 and move radially above the polishing disk 31. During chemical mechanical polishing (CMP), the two carrier heads 32 simultaneously press the wafers onto a polishing pad covering the surface of the polishing disk 31. The polishing pad is larger than the wafer to be polished, for example, 1.2 times or more, ensuring uniform polishing. The two carrier heads 32 can simultaneously rotate and reciprocate radially along the polishing disk 31, gradually removing surface imperfections from the wafers in contact with the polishing pad. Simultaneously, the polishing disk 31 rotates, and the liquid supply section 35 sprays polishing fluid onto the polishing pad surface, enabling simultaneous polishing of two wafers and increasing throughput per unit time. After polishing, the two carrier heads 32 respectively adsorb the wafer and place it on the corresponding wafer storage section 33. The transfer module 4 takes the wafer from the wafer storage section 33 and transports the wafer to the cleaning module 2.

[0059] In one embodiment, the two carrier heads 32 can be the same or different in size. For example, the bottom diameter of one carrier head 32 is larger than the bottom diameter of the other carrier head 32. One carrier head 32 is suitable for 12-inch wafer polishing, and the other carrier head 32 is suitable for 8-inch wafer polishing. This embodiment has two carrier heads 32 of different sizes, enabling the polishing of two wafer sizes and increasing the applicability of the thinning equipment.

[0060] Cleaning module 2:

[0061] like Figure 1 or Figure 3 As shown, the thinning device has two symmetrically distributed cleaning modules 2, both located between the polishing module 3 and the front-end module 1. These two cleaning modules 2 are symmetrically distributed along the length of the thinning device.

[0062] like Figure 1 or Figure 3 As shown, in one embodiment, each cleaning module 2 may include multiple cleaning devices. The cleaning devices can be implemented in various ways, including brushed cleaning and brushless cleaning, and can be vertical or horizontal cleaning. The accompanying drawings of this application exemplarily illustrate one implementation of the cleaning module 2 including a brushing device 21 and a drying device 22, which are arranged adjacent to each other along the width direction of the thinning device. Alternatively, each cleaning module 2 may also include at least one of the brushing device 21 and the drying device 22, and the specific number is not limited.

[0063] In this embodiment, the two cleaning modules 2 can independently complete the post-processing of the wafer, effectively improving the fault tolerance of the cleaning module 2; at the same time, configuring the independently operating cleaning module 2 is also conducive to enhancing the mutual cooperation between polishing and cleaning.

[0064] Transmission module 4:

[0065] like Figure 1 or Figure 3 As shown, the thinning device has two symmetrically distributed transmission modules 4, which are located on both sides of the polishing module 3 and on the edge of the thinning device, arranged parallel to each other along the length of the device.

[0066] like Figure 1 or Figure 3 As shown, in one embodiment, the transmission module 4 includes a first transmission component and a second transmission component, which are arranged adjacent to each other along the length of the device. The first transmission component is located near the front-end module 1 of the device, and the second transmission component is located near the grinding module 5. The first transmission component is used to transmit wafers between the second transmission component, the polishing module 3, the cleaning module 2, and the front-end module 1 of the device, and the second transmission component is used to transmit wafers between the grinding module 5, the polishing module 3, and the first transmission component.

[0067] The first transfer component includes a front-end robot arm 41 and a buffer unit 42. The front-end robot arm 41 is positioned adjacent to the front-end module 1 of the device and is used to transfer wafers between the buffer unit 42, the polishing module 3, the cleaning module 2, and the front-end module 1 of the device. The buffer unit 42 is arranged along the length of the device and can move bidirectionally.

[0068] The second transfer component includes a back-end robot 43 for transferring wafers between the grinding module 5, the polishing module 3, and the buffer section 42.

[0069] The working process of the thinning device in each embodiment is described below.

[0070] like Figure 2 As shown, the wafer processing procedure in the thinning equipment provided in Embodiment 1 specifically includes:

[0071] When the wafer starts to be loaded, it is taken out from the front-end module 1 of the equipment and placed in the left and right transfer modules 4. The wafer is then transferred to the grinding module 5 through the front-end robot 41, the buffer 42 and the rear-end robot 43 in sequence.

[0072] Two wafers are placed at two separate loading / unloading stations, where they are vacuum-adsorbed and fixed by suction cups. The worktable 50 rotates 120°, and the two wafers simultaneously enter the rough grinding station, where they undergo rough grinding by the rough grinding unit 51. At the same time, two new wafers are loaded from the front module 1 of the equipment to the loading / unloading station. The worktable 50 rotates 120° again, and the two wafers simultaneously enter the fine grinding station, where they undergo fine grinding by the fine grinding unit 52. At the same time, two other wafers undergo rough grinding at the rough grinding station, and two new wafers are loaded to the loading / unloading station. The worktable 50 rotates another 120°, and the two wafers simultaneously return to the loading / unloading station.

[0073] The back-end robotic arm 43 takes out the wafers from the loading and unloading station and places them into the two wafer storage sections 33 of the polishing module 3. The two carrier heads 32 take the wafers from the wafer storage sections 33 and transport them to the polishing pad 31 for polishing. The polishing process of the two wafers is carried out simultaneously. After polishing is completed, the carrier head 32 puts the wafers into the wafer storage section 33.

[0074] The back-end robot 43 takes the wafer from the storage section 33 and places it in the cache section 42. The cache section 42 moves to the side closer to the front-end robot 41. The front-end robot 41 takes the wafer from the cache section 42 and transfers it to the cleaning module 2 for cleaning and drying.

[0075] The wafers that have been cleaned and dried in cleaning module 2 are sent back to the front-end module 1 of the equipment.

[0076] like Figure 4 As shown, in the wafer thinning equipment provided in Embodiment 2, the wafer processing procedure specifically includes:

[0077] When the wafer starts to be loaded, it is taken out from the front-end module 1 of the equipment and placed in the left and right transfer modules 4. The wafer is then transferred to the grinding module 5 through the front-end robot 41, the buffer 42 and the rear-end robot 43 in sequence.

[0078] Two wafers are placed at two separate loading / unloading stations, where they are vacuum-adsorbed and fixed by suction cups. The worktable 50 rotates 120°, and the two wafers simultaneously enter the rough grinding station, where they undergo rough grinding by the rough grinding unit 51. At the same time, two new wafers are loaded from the front module 1 of the equipment to the loading / unloading station. The worktable 50 rotates 120° again, and the two wafers simultaneously enter the fine grinding station, where they undergo fine grinding by the fine grinding unit 52. At the same time, two other wafers undergo rough grinding at the rough grinding station, and two new wafers are loaded to the loading / unloading station. The worktable 50 rotates another 120°, and the two wafers simultaneously return to the loading / unloading station.

[0079] A wafer is taken from the loading and unloading station by the back-end robot 43 and placed in a wafer storage section 33 near the grinding module 5. Then it is polished. After polishing, the wafer is returned to the wafer storage section 33. The back-end robot 43 takes the wafer from the wafer storage section 33 and places it in the buffer section 42. The buffer section 42 moves to the side near the front-end robot 41. The front-end robot 41 takes the wafer from the buffer section 42 and transfers it to the cleaning module 2 for cleaning and drying.

[0080] Another wafer is taken out from the loading and unloading station by the back-end robot 43 and placed in the buffer section 42. The buffer section 42 moves to the side close to the front-end robot 41. The front-end robot 41 takes the wafer from the buffer section 42 and places it in another wafer storage section 33 close to the cleaning module 2. Then it is polished and returned to this wafer storage section 33 after polishing. The front-end robot 41 takes this wafer from the wafer storage section 33 and transfers it to the cleaning module 2 for cleaning and drying.

[0081] The wafers that have been cleaned and dried in cleaning module 2 are sent back to the front-end module 1 of the equipment.

[0082] In summary, the thinning equipment provided in this application can process two wafers simultaneously, doubling the processing efficiency. There are no limitations on the wafer size; it can be used to process 300mm wafers or 200mm wafers. The thinning equipment in this application employs an optimized structural layout, resulting in significantly lower cost and size compared to using two existing layout machines.

[0083] The accompanying drawings in this specification are schematic diagrams used to illustrate the concept of the invention and to schematically show the shapes of the various parts and their interrelationships. It should be understood that, in order to clearly show the structure of the various components of the embodiments of the invention, the drawings are not drawn to the same scale, and the same reference numerals are used to indicate the same parts in the drawings.

[0084] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0085] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A grinding module for a thinning device, characterized in that, The grinding module includes: Base; The worktable is rotatably mounted on the base; Six fasteners are evenly distributed on the worktable, each of which is used to hold a wafer and drive the wafer to rotate. Four grinding elements are mounted on the base, two of which are used to perform rough grinding and the other two are used to perform fine grinding; The grinding module is configured to process six wafers simultaneously, with each pair of wafers undergoing the same process at the same time.

2. The grinding module according to claim 1, characterized in that, Two grinding elements for performing rough grinding are arranged adjacent to each other, and two grinding elements for performing fine grinding are arranged adjacent to each other.

3. The grinding module according to claim 1, characterized in that, At least one grinding element for performing fine grinding is disposed between the two grinding elements for performing rough grinding.

4. The grinding module according to claim 1, characterized in that, The support base for mounting the four grinding parts is located in the edge region of the grinding module, and the four grinding parts are all located on the same side of the support base and extend inward toward the fixing member.

5. The grinding module according to claim 1, characterized in that, The support base for mounting the four grinding parts is located in the central area of ​​the grinding module, and the six fasteners are distributed around the support base.

6. The grinding module according to claim 1, characterized in that, The worktable is configured to rotate 60° each time so that every two wafers can be moved from one workstation to the next.

7. The grinding module according to claim 1, characterized in that, The six fasteners are evenly distributed along the circumference of the workbench, and the line connecting the center of two adjacent fasteners to the center of the workbench forms a 60° angle.

8. The grinding module according to claim 1, characterized in that, The fixing component is a suction cup.

9. The grinding module according to claim 1, characterized in that, The grinding component includes a grinding wheel and a spindle assembly that is drively connected to the grinding wheel.

10. A thinning device, characterized in that, include: The front-end module of the equipment is used to realize the loading and unloading of wafers; The grinding module as described in any one of claims 1-9; A polishing module, disposed adjacent to the grinding module, is used to perform chemical mechanical polishing on the wafer after grinding; A cleaning module is disposed between the polishing module and the front-end module of the equipment, and is used to clean the polished wafer; A transmission module is used to transmit wafers between the device front-end module, the grinding module, the polishing module, and the cleaning module.

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