Etchant composition for etching metal nitride layer and method of forming pattern using the same

Abstract

The present invention relates to an etchant composition for etching a metal nitride layer and a method of forming a pattern using the same. The etchant composition includes an oxidizing agent, a fluorine-containing compound, an additive containing a carbonate-based compound, and the rest of water. The method of forming a pattern includes forming a metal pattern on a substrate, forming a barrier layer containing a metal nitride and covering the metal pattern on the substrate, and etching the barrier layer using the etchant composition.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2025-0022090, filed on February 20, 2025, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] This invention relates to an etchant composition for etching metal nitride layers and a method for forming patterns using the same. More specifically, this invention relates to an etchant composition for etching metal nitride layers containing oxide components and a method for forming patterns using the same. Background Technology

[0004] For example, in semiconductor devices such as DRAM, NAND flash memory, and logic devices, or in semiconductor devices / wiring included in display devices, there has been ongoing development to achieve high-speed operation while significantly reducing the critical size (CD).

[0005] Conductive patterns (such as gate electrodes, contacts, and wiring) can be formed in semiconductor devices using low-resistance metals (e.g., Co, W, Cu, and Al). Metal nitride layers can be temporarily formed as protective or barrier layers to protect the conductive patterns.

[0006] Therefore, selective etching processes for metal nitride layers can be included in semiconductor device manufacturing. However, if the semiconductor substrate, insulating layer (e.g., silicon oxide layer), and conductive patterns are damaged during the etching of the metal nitride layer, the operational reliability of the semiconductor device can be reduced. Summary of the Invention

[0007] According to one aspect of the invention, an etchant composition for etching metal nitride layers is provided, which provides enhanced etching stability and selectivity.

[0008] According to one aspect of the present invention, a method for forming a pattern using an etchant composition is provided.

[0009] (1) An etchant composition for etching a metal nitride layer, comprising: an oxidant; a fluorinated compound; an additive containing a carbonate-based compound; and the remainder water.

[0010] (2) The etchant composition according to (1) above, wherein the oxidant comprises at least one selected from the group consisting of: hydrogen peroxide, FeCl3, Sr(NO3)2, potassium peroxymonosulfate (2KHSO5·HSO4·K2SO4), periodic acid, iodic acid, vanadium oxide, ammonium vanadate, ammonium peroxymonosulfate, ammonium chlorite (NH4ClO2), ammonium chlorate (NH4ClO3), ammonium iodate (NH4IO3), ammonium nitrate (NH4NO3), ammonium perborate (NH4BO3), ammonium perchlorate (NH4ClO4), ammonium periodate (NH4IO4), ammonium persulfate ((NH4)2S2O8), ammonium hypochlorite (NH4ClO), ammonium tungstate ((NH4)2S2O8), ammonium hypochlorite (NH4ClO), ammonium tungstate ((NH4)2S2O8). 10 H2(W2O7)), sodium persulfate (Na2S2O8), sodium hypochlorite (NaClO), sodium perborate, potassium iodate (KIO3), potassium permanganate (KMnO4), potassium persulfate, nitric acid (HNO3), potassium persulfate (K2S2O8), potassium hypochlorite (KClO), tetramethylammonium chlorite ((N(CH3)4)ClO2), tetramethylammonium chlorate ((N(CH3)4)ClO3), tetramethylammonium iodate ((N(CH3)4)IO3), tetramethylammonium perborate ((N(CH3)4)BO3), tetramethylammonium perchlorate ((N(CH3)4)BO3), 4) ClO4), tetramethylammonium periodate ((N(CH3)4)IO4), tetramethylammonium persulfate ((N(CH3)4)S2O8), tetrabutylammonium peroxymonosulfate, peroxymonosulfuric acid, sulfuric acid, methanesulfonic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, 10-camphorsulfonic acid, ferric nitrate (Fe(NO3)3), hydrogen peroxide of urea ((CO(NH2)2)H2O2), peracetic acid (CH3(CO)OOH), 1,4-benzoquinone, toluenequinone, dimethyl-1,4-benzoquinone, chloroquinone, alloxan, N-methylmorpholine N-oxide and trimethylamine N-oxide.

[0011] (3) The etchant composition according to (1) above, wherein the content of the oxidant is from 0.0001% by weight to 10% by weight based on the total weight of the composition.

[0012] (4) The etchant composition according to (1) above, wherein the content of the oxidant is from 0.001% by weight to 5% by weight based on the total weight of the composition.

[0013] (5) The etchant composition according to (1) above, wherein the fluorinated compound comprises at least one selected from the group consisting of: H2ZrF6, hexafluorotitanic acid (H2TiF6), hydrofluoric acid, tetrafluoroboric acid, hexafluorophosphate, hexafluorosilicic acid, ammonium hexafluorosilicate, ammonium hexafluorotitanic acid, ammonium fluoride, methylammonium fluoride, dimethylammonium fluoride, trimethylammonium fluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride, and tetrapentylammonium fluoride.

[0014] (6) The etchant composition according to (1) above, wherein the content of the fluorinated compound is from 0.001% by weight to 10% by weight based on the total weight of the composition.

[0015] (7) The etchant composition according to (1) above, wherein the content of the fluorinated compound is from 0.01% by weight to 5% by weight based on the total weight of the composition.

[0016] (8) The etchant composition according to (1) above, wherein the carbonate-based compound comprises at least one selected from the group consisting of carbonic acid, carbonate, bicarbonate and methyl carbonate.

[0017] (9) The etchant composition according to (8) above, wherein the carbonate, the bicarbonate and the methyl carbonate each comprise a salt selected from at least one of the following: ammonium, tetramethylammonium, tetraethylammonium, tetrapropylammonium, tetrabutylammonium, butyltrimethylammonium, tetrapentylammonium, hexyltrimethylammonium, heptyltrimethylammonium, octyltrimethylammonium, octylammonium, nonyltrimethylammonium, decyltrimethylammonium, undecyltrimethylammonium, dodecyltrimethylammonium, dodecylammonium, tridecyltrimethylammonium, tetradecyltrimethylammonium, pentadecyltrimethylammonium, hexadecyltrimethylammonium, heptadecanyltrimethylammonium, octadecylammonium, octadecyltrimethylammonium and trimethylstearylammonium.

[0018] (10) The etchant composition according to (1) above, wherein the content of the carbonate-based compound is from 0.01% by weight to 20% by weight based on the total weight of the composition.

[0019] (11) The etchant composition according to (1) above, wherein the content of the carbonate-based compound is from 0.1% to 10% by weight based on the total weight of the composition.

[0020] (12) A method of forming a pattern, comprising: forming a metal pattern on a substrate; forming a barrier layer on the substrate comprising a metal nitride and covering the metal pattern; and etching the barrier layer using the above-described etchant composition.

[0021] (13) The method according to (12) above further includes heat-treating the barrier layer and the metal pattern before etching the barrier layer.

[0022] (14) According to the method described in (12) above, wherein the metal pattern comprises molybdenum (Mo) or tungsten (W), and the barrier layer comprises titanium nitride (TiN).

[0023] According to embodiments of the present invention, the etchant composition for the metal nitride layer may include a metal protectant comprising a carbonate-based compound. This metal protectant can protect the metal layer or a metal pattern including molybdenum (Mo), tungsten (W), etc., and can selectively etch the metal nitride layer.

[0024] In an example implementation, a barrier layer comprising titanium nitride (TiN) can be formed on the conductive pattern, followed by an annealing process. Thereafter, an etchant composition can be used to selectively remove the barrier layer while suppressing etch damage to the conductive pattern.

[0025] Therefore, etchant compositions can be used to form conductive patterns for semiconductor devices with high reliability, such as wiring, gate electrodes, contacts, etc. Attached Figure Description

[0026] Figures 1 to 4 This is a schematic cross-sectional view illustrating a method for forming a pattern according to an exemplary embodiment. Detailed Implementation

[0027] Embodiments of the present invention provide an etchant composition comprising an oxidizing etchant and a metal protectant in the form of a metal nitride layer. Furthermore, embodiments of the present invention provide a method for forming a pattern using the etchant composition.

[0028] Etching compositions for metal nitride layers can be used in selective etching processes of barrier layers including metal nitrides during device processes such as forming gate electrodes and wiring in semiconductor devices or image display devices.

[0029] In an example implementation, the etchant composition for the metal nitride layer can be used for selective etching of the titanium nitride (TiN) layer.

[0030] Embodiments of the present invention will be described in detail below. However, these embodiments are provided by way of example only, and this disclosure is not limited to the specific embodiments described herein.

[0031] <Etching Composition for Metal Nitride Layers>

[0032] An etchant composition for a metal nitride layer according to an example embodiment (hereinafter, it may be abbreviated as "etchant composition") may include an oxidant, a fluorinated compound and a carbonate-based compound, and may also include residual water.

[0033] The oxidant can be used as a primary etchant for metal nitrides (e.g., TiN). For example, the oxidant may include a fluorine-free oxidizing compound.

[0034] For example, the oxidizing agent may include hydrogen peroxide, FeCl3, Sr(NO3)2, potassium peroxymonosulfate (2KHSO5·HSO4·K2SO4), periodic acid, iodic acid, vanadium oxide, ammonium vanadate, ammonium peroxymonosulfate, ammonium chlorite (NH4ClO2), ammonium chlorate (NH4ClO3), ammonium iodate (NH4IO3), ammonium nitrate (NH4NO3), ammonium perborate (NH4BO3), ammonium perchlorate (NH4ClO4), ammonium periodate (NH4IO4), ammonium persulfate ((NH4)2S2O8), ammonium hypochlorite (NH4ClO), and ammonium tungstate ((NH4)2S2O8). 10 H2(W2O7)), sodium persulfate (Na2S2O8), sodium hypochlorite (NaClO), sodium perborate, potassium iodate (KIO3), potassium permanganate (KMnO4), potassium persulfate, nitric acid (HNO3), potassium persulfate (K2S2O8), potassium hypochlorite (KClO), tetramethylammonium chlorite ((N(CH3)4)ClO2), tetramethylammonium chlorate ((N(CH3)4)ClO3), tetramethylammonium iodate ((N(CH3)4)IO3), tetramethylammonium perborate ((N(CH3)4)BO3), tetramethylammonium perchlorate ((N(CH3)4)BO3), 4) ClO4), tetramethylammonium periodate ((N(CH3)4)IO4), tetramethylammonium persulfate ((N(CH3)4)S2O8), tetrabutylammonium peroxymonosulfate, peroxymonosulfuric acid, sulfuric acid, methanesulfonic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, 10-camphorsulfonic acid, ferric nitrate (Fe(NO3)3), hydrogen peroxide of urea ((CO(NH2)2)H2O2), peracetic acid (CH3(CO)OOH), 1,4-benzoquinone, toluenequinone, dimethyl-1,4-benzoquinone, chloroquinone, alloxan, N-methylmorpholine N-oxide, trimethylamine N-oxide, etc. These can be used alone or in combination of two or more.

[0035] In some embodiments, the oxidant may include hydrogen peroxide, periodic acid, ammonium persulfate, hypochlorous acid, ammonium iodate, ammonium periodate, nitric acid, N-methylmorpholine N-oxide, sulfuric acid, methanesulfonic acid, and / or benzenesulfonic acid. These may be used alone or in combination of two or more.

[0036] In an example embodiment, the content of the oxidant can be from 0.0001% by weight to 10% by weight, based on the total weight of the etchant composition. Within this range, a sufficient etching rate for the metal nitride layer can be achieved while maintaining an appropriate oxidation rate.

[0037] In a preferred embodiment, the content of the oxidant can be from 0.001% by weight to 5% by weight. Within this range, the etching rate of the TiN layer can be increased more effectively while inhibiting the etching of the metal layer.

[0038] Fluorine-containing compounds can be used together with oxidants as etchants for metal nitride layers (e.g., TiN layers). Fluorine-containing compounds can include hydrofluoric acid or other fluorine-containing compounds.

[0039] In exemplary embodiments, fluorinated compounds may include H₂ZrF₆, hexafluorotitanic acid (H₂TiF₆), hydrofluoric acid, tetrafluoroboric acid, hexafluorophosphate, hexafluorosilicic acid, ammonium hexafluorosilicate, ammonium hexafluorotitanic acid, ammonium fluoride, methylammonium fluoride, dimethylammonium fluoride, trimethylammonium fluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride, tetrapentylammonium fluoride, etc. These may be used alone or in combination of two or more.

[0040] In an example embodiment, the content of the fluorinated compound can be from 0.001% by weight to 10% by weight, based on the total weight of the etchant composition. Within this range, a sufficient etching rate for the metal nitride layer can be achieved while preventing damage to other layers such as SiO2, SiN, and CoSi.

[0041] In a preferred embodiment, the content of the fluorine-containing compound can be from 0.01% to 5% by weight, more preferably from 0.01% to 0.5% by weight. Within the above range, the etching rate of the TiN layer can be increased more effectively while inhibiting the etching of the metal layer.

[0042] In an example embodiment, the etchant composition may include a carbonate-based compound as an additive. The carbonate-based compound may act as a protectant or corrosion inhibitor for metal layers or metal patterns containing molybdenum (Mo), tungsten (W), etc. The carbonate-based compound can inhibit etching of the metal layer while improving the etching selectivity of the metal nitride layer (e.g., a TiN layer).

[0043] Carbonate-based compounds may include carbonic acid, carbonates, bicarbonates (hydrogen carbonate), and / or methyl carbonates.

[0044] In an example embodiment, carbonates, bicarbonates, and methyl carbonates may include carbonates, bicarbonates, and methyl carbonates of ammonium, tetramethylammonium, tetraethylammonium, tetrapropylammonium, tetrabutylammonium, butyltrimethylammonium, tetrapentylammonium, hexyltrimethylammonium, heptyltrimethylammonium, octyltrimethylammonium, octylammonium, nonyltrimethylammonium, decyltrimethylammonium, undecyltrimethylammonium, dodecyltrimethylammonium, dodecylammonium, tridecyltrimethylammonium, tetradecyltrimethylammonium, pentadecyltrimethylammonium, hexadecyltrimethylammonium, heptadecanyltrimethylammonium, octadecylammonium, octadecyltrimethylammonium, and trimethylstearylammonium, etc.

[0045] In an example embodiment, the content of the carbonate-based compound can be from 0.01% to 20% by weight, based on the total weight of the etchant composition. Within this range, etching of the metal layer can be sufficiently suppressed while improving the etching uniformity of the metal nitride layer. For example, if the content of the carbonate-based compound is excessively increased, etching uniformity may deteriorate due to adsorption with the metal nitride layer.

[0046] Preferably, the content of the carbonate-based compound can be from 0.1% to 10% by weight, more preferably from 0.1% to 5% by weight.

[0047] The etchant composition may include residual or surplus water. For example, deionized water used in semiconductor processing can be used.

[0048] As used herein, the terms “remaining” or “surplus” are used in a variable / open sense to mean the amount remaining after excluding the aforementioned components, or the amount remaining after further excluding additional components.

[0049] The etchant composition may also contain additives, within a range that does not impede the effects of the oxidants, fluorinated compounds and carbonate-based compounds as described above.

[0050] For example, the etchant composition may also include pH adjusters, surfactants, auxiliary oxidants, etc., which are widely used in the field of etchants.

[0051] pH adjusters can include acidic or basic compounds. Examples of acidic compounds include inorganic acids such as nitric acid or its salts, or organic acids such as acetic acid, lactic acid, oxalic acid, tartaric acid, citric acid, etc., or their salts. Examples of basic compounds include compounds with ammonia or ammonium groups.

[0052] Examples of surfactants include cationic surfactants, anionic surfactants, or amphoteric surfactants.

[0053] Examples of auxiliary oxidants include peroxides, inorganic acid salts, persulfate, and persulfates.

[0054] In some embodiments, the etchant composition may not include chelating compounds such as ethylenediaminetetraacetic acid (EDTA), EDTA-2NH3 (ethylenediaminetetraacetic acid diammonium salt), (1,2-hexamethylenediamine)tetraacetic acid (CDTA), diethylenetriaminepentaacetic acid (DTPA), 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA), etc. In some embodiments, the etchant composition may not contain organic solvents other than water, such as alcohol-based solvents. For example, chelating agents and organic solvents can interact with each other to reduce the etching rate of the TiN layer.

[0055] In some embodiments, at 60°C and 400 rpm, the etchant composition can provide the TiN layer with an etching rate of about 40 Å / min or higher, preferably about 50 Å / min or higher, more preferably about 60 Å / min.

[0056] In some embodiments, at 60°C and 400 rpm, the etchant composition can provide 20 or more, preferably 30 or more, and more preferably 40 or more, etch selectivity to the TiN layer relative to the Mo or W layer.

[0057] <Methods for forming patterns>

[0058] Figures 1 to 4 This is a schematic cross-sectional view illustrating a method for forming a pattern according to an embodiment.

[0059] See Figure 1 An insulating layer 110 and a metal layer 120 can be formed on the substrate 100.

[0060] The substrate 100 may contain semiconductor materials, such as monocrystalline silicon or monocrystalline germanium, and may also be formed to include polycrystalline silicon.

[0061] The insulating layer 110 can be formed to contain an insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, polysiloxane, etc. For example, the insulating layer 110 can be formed by chemical vapor deposition (CVD), sputtering, physical vapor deposition (PVD), atomic layer deposition (ALD), etc.

[0062] The metal layer 120 may be formed on the insulating layer 110. In an example embodiment, the metal layer 120 may be formed by a sputtering process or a PVD process to include a metal such as molybdenum (Mo) or tungsten (W).

[0063] See Figure 2 The metal layer 120 and the insulating layer 110 can be etched to form a metal pattern 125 and an insulating pattern 115. The metal layer 120 and the insulating layer 110 can be etched together by dry etching or sequentially by wet etching using different etchant solutions.

[0064] In an example implementation, the insulating pattern 115 can be used as the gate insulating pattern of a semiconductor device, and the metal pattern 125 can be used as the gate electrode of a semiconductor device.

[0065] See Figure 3 A barrier layer 130 covering a metal pattern 125 and an insulating pattern 115 can be formed on the substrate 100. The barrier layer 130 can be formed by a sputtering process or a PVD process to include a metal nitride such as TiN.

[0066] Subsequently, a heat treatment or annealing process can be performed to stabilize the crystal structure of the metal pattern 125. During the heat treatment or annealing process, the barrier layer 130 can block the diffusion of the metal components.

[0067] See Figure 4 The barrier layer 130 can be etched using the etchant composition according to the above embodiments of the present invention. Therefore, the barrier layer 130 can be substantially removed. For example, the barrier layer 130 can be removed by spraying and / or immersion in the above-described etchant composition.

[0068] As described above, the barrier layer 130 can be etched through the interaction of the oxidant and the fluorine-containing compound, and the carbonate-based compound can act as a metal protectant or corrosion inhibitor, thereby suppressing etching damage to the metal pattern 125. Furthermore, the carbonate-based compound can also suppress etching damage to the insulating pattern 115 and the substrate 100. Additionally, uniform etching can be performed on the barrier layer 130 to prevent metal nitride residues.

[0069] In the following description, embodiments of the present disclosure will be further described with reference to specific experimental examples. The examples and comparative examples included in the experimental examples are provided only to facilitate understanding of the present disclosure and are not intended to limit the scope of the appended claims. It will be apparent to those skilled in the art that various changes and modifications can be made to the embodiments within the scope and spirit of the present disclosure, and that such changes and modifications fall within the scope of the appended claims.

[0070] Examples and Comparative Examples

[0071] The compounds described in Table 3 below are mixed in the corresponding amounts (wt%) shown in Table 1 (Examples) and Table 2 (Comparative Examples), and generally include the remaining water, to prepare the etchant compositions for the Examples and Comparative Examples.

[0072] [Table 1]

[0073]

[0074]

[0075] [Table 2]

[0076]

[0077] [Table 3]

[0078]

[0079]

[0080] Experimental Example

[0081] (1) Evaluation of etching characteristics of TiN, SiO2, SiN, CoSi, Mo and W

[0082] Wafers comprising TiN, SiO2, SiN, CoSi, Mo, and W layers, each with a thickness of 2,000 Å, were cut into 1.5 cm × 1.5 cm pieces to prepare samples. The samples were immersed in each of the etchant compositions of the examples and comparative examples at 60 °C and 400 rpm. Samples containing TiN, W, and Mo layers were immersed for 1 minute, while samples containing SiO2, SiN, and CoSi layers were immersed for 5,000 seconds.

[0083] Each sample was removed, rinsed with water, and dried. The thickness of each layer was then measured using XRF or an ellipsometry. Variations in layer thickness were used to calculate the etching rates of the TiN, Mo, and W layers.

[0084] The etching rate of the TiN layer was evaluated according to Table 4 below. Selectivity (Ti / metal) was calculated as the ratio of the etching rate of the TiN layer to the etching rates of the Mo and W layers, and was evaluated as shown in Table 5 below.

[0085] [Table 4]

[0086]

[0087] [Table 5]

[0088]

[0089] The etching rates of samples including SiO2, SiN and CoSi layers were measured to assess etching damage, as shown in Table 6 below.

[0090] [Table 6]

[0091]

[0092] (2) Evaluation of TiN surface properties

[0093] Wafers with 2,000 Å thick Mo and W layers deposited respectively were cut into 1.5 cm × 1.5 cm pieces to prepare samples. The samples were immersed in the etchant compositions of the examples and comparative examples at 60 °C and 400 rpm for 1 minute. The samples were then removed, rinsed with water, and air-dried. Surface roughness was subsequently measured using AFM and evaluated as shown in Table 7 below.

[0094] [Table 7]

[0095]

[0096] The evaluation results are shown in Tables 8 and 9 below.

[0097] [Table 8]

[0098]

[0099]

[0100] [Table 9]

[0101]

[0102] Referring to Tables 8 and 9, in the examples using oxidants, fluorinated compounds, and carbonate-based compounds, a sufficient etching rate for the TiN layer was achieved while suppressing etching damage to the metal layer and other inorganic layers.

[0103] In Comparative Examples 1, 2, 4 and 5, carbonate-based compounds were included, but oxidants or fluorine-containing compounds were omitted, resulting in a decrease in the etching rate and etching selectivity of TiN.

[0104] In Comparative Examples 3 and 6, the carbonate-based compound was omitted, which increased etch damage to the metal layer and other inorganic layers and resulted in reduced etch selectivity.

[0105] In Comparative Examples 7 and 8, the use of ammonium salts instead of carbonates significantly increased etch damage to the metal and other inorganic layers.

[0106] In Example 50, the chelating agent was used in conjunction with a carbonate-based compound, which relatively reduced the etching rate and etching uniformity of the TiN layer.

Claims

1. An etchant composition for etching metal nitride layers, comprising: Oxidizing agent; Fluorine-containing compounds; Additives containing carbonate-based compounds; as well as The remaining water.

2. The etchant composition according to claim 1, wherein, The oxidizing agent includes at least one selected from the group consisting of: hydrogen peroxide, FeCl3, Sr(NO3)2, potassium peroxymonosulfate (2KHSO5·HSO4·K2SO4), periodic acid, iodic acid, vanadium oxide, ammonium vanadate, ammonium peroxymonosulfate, ammonium chlorite (NH4ClO2), ammonium chlorate (NH4ClO3), ammonium iodate (NH4IO3), ammonium nitrate (NH4NO3), ammonium perborate (NH4BO3), ammonium perchlorate (NH4ClO4), ammonium periodate (NH4IO4), ammonium persulfate ((NH4)2S2O8), ammonium hypochlorite (NH4ClO), and ammonium tungstate ((NH4) 10 H2(W2O7)), sodium persulfate (Na2S2O8), sodium hypochlorite (NaClO), sodium perborate, potassium iodate (KIO3), potassium permanganate (KMnO4), potassium persulfate, nitric acid (HNO3), potassium persulfate (K2S2O8), potassium hypochlorite (KClO), tetramethylammonium chlorite ((N(CH3)4)ClO2), tetramethylammonium chlorate ((N(CH3)4)ClO3), tetramethylammonium iodate ((N(CH3)4)IO3), tetramethylammonium perborate ((N(CH3)4)BO3), tetramethylammonium perchlorate ((N(CH3)4)BO3), 4) ClO4), tetramethylammonium periodate ((N(CH3)4)IO4), tetramethylammonium persulfate ((N(CH3)4)S2O8), tetrabutylammonium peroxymonosulfate, peroxymonosulfuric acid, sulfuric acid, methanesulfonic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, 10-camphorsulfonic acid, ferric nitrate (Fe(NO3)3), hydrogen peroxide of urea ((CO(NH2)2)H2O2), peracetic acid (CH3(CO)OOH), 1,4-benzoquinone, toluenequinone, dimethyl-1,4-benzoquinone, chloroquinone, alloxan, N-methylmorpholine N-oxide and trimethylamine N-oxide.

3. The etchant composition according to claim 1, wherein, The content of the oxidant is from 0.0001% by weight to 10% by weight, based on the total weight of the composition.

4. The etchant composition according to claim 1, wherein, The content of the oxidant is from 0.001% by weight to 5% by weight, based on the total weight of the composition.

5. The etchant composition according to claim 1, wherein, The fluorinated compound includes at least one selected from the group consisting of: H2ZrF6, hexafluorotitanic acid (H2TiF6), hydrofluoric acid, tetrafluoroboric acid, hexafluorophosphate, hexafluorosilicic acid, ammonium hexafluorosilicate, ammonium hexafluorotitanic acid, ammonium fluoride, methylammonium fluoride, dimethylammonium fluoride, trimethylammonium fluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride, and tetrapentylammonium fluoride.

6. The etchant composition according to claim 1, wherein, Based on the total weight of the composition, the content of the fluorinated compound is from 0.001% by weight to 10% by weight.

7. The etchant composition according to claim 1, wherein, Based on the total weight of the composition, the content of the fluorinated compound is from 0.01% by weight to 5% by weight.

8. The etchant composition according to claim 1, wherein, The carbonate-based compound includes at least one selected from the group consisting of carbonic acid, carbonate, bicarbonate and methyl carbonate.

9. The etchant composition according to claim 8, wherein, The carbonate, the bicarbonate, and the methyl carbonate each comprise a salt selected from at least one of the following: ammonium, tetramethylammonium, tetraethylammonium, tetrapropylammonium, tetrabutylammonium, butyltrimethylammonium, tetrapentylammonium, hexyltrimethylammonium, heptyltrimethylammonium, octyltrimethylammonium, octylammonium, nonyltrimethylammonium, decyltrimethylammonium, undecyltrimethylammonium, dodecyltrimethylammonium, dodecylammonium, tridecyltrimethylammonium, tetradecyltrimethylammonium, pentadecyltrimethylammonium, hexadecyltrimethylammonium, heptadecanyltrimethylammonium, octadecylammonium, octadecyltrimethylammonium, and trimethylstearylammonium.

10. The etchant composition according to claim 1, wherein, Based on the total weight of the composition, the content of the carbonate-based compound is from 0.01% by weight to 20% by weight.

11. The etchant composition according to claim 1, wherein, Based on the total weight of the composition, the content of the carbonate-based compound is from 0.1% to 10% by weight.

12. A method for forming a pattern, comprising: Forming a metallic pattern on the substrate; A barrier layer comprising a metal nitride and covering the metal pattern is formed on the substrate; as well as The barrier layer is etched using the etchant composition according to any one of claims 1-11.

13. The method of claim 12, further comprising heat-treating the barrier layer and the metal pattern prior to etching the barrier layer.

14. The method according to claim 12, wherein, The metal pattern comprises molybdenum (Mo) or tungsten (W), and the barrier layer comprises titanium nitride (TiN).

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