Wafer growth control method and control apparatus

Abstract

The application relates to a wafer growth control method and a control device, and relates to the field of crystal growth. The method comprises the following steps: judging whether an abnormal position exists on a solid-liquid interface ring based on the temperature distribution of each position on the solid-liquid interface ring, the outer diameter of each position, the inner diameter of each position and the curvature of each position; judging whether a temperature abnormal area exists on a melt surface based on the temperature of the melt surface; if the abnormal position and the temperature abnormal area exist, determining the correlation degree between the temperature abnormal area and the abnormal position; determining the heating position of a temperature compensator based on the position of the temperature abnormal area, the abnormal position and the correlation degree; determining the operation temperature of the temperature compensator based on the temperature of the temperature abnormal area and the temperature distribution of the abnormal position; and controlling the compensation unit corresponding to the heating position to perform temperature compensation according to the operation temperature. The application can accurately determine the abnormal position on the solid-liquid interface ring and reduce the negative influence of the abnormal position on the solid-liquid interface ring on crystal growth.

Description

Technical Field

[0001] This application relates to the field of crystal growth, and in particular to a wafer growth control method and control equipment. Background Technology

[0002] In wafer manufacturing, the preparation and production of silicon rods is a very important step. The production of silicon rods is mainly accomplished by the Czochralski method: First, high-purity polycrystalline silicon is heated to melt in a quartz crucible, and under the protection of an inert gas, a seed crystal is used to contact the surface of the melt and slowly pulled upwards, so that the melt crystallizes along the seed crystal to form a single crystal silicon rod.

[0003] During the Czochralski process of single-crystal silicon growth, blackbody radiation is generated on the surface of the molten silicon. A strong radiation band forms at the interface edge with the largest temperature gradient. Furthermore, due to the surface tension of the molten silicon, a meniscus structure forms at the interface between the molten silicon and the silicon rod. This meniscus structure amplifies the visual effect of light refraction, creating a luminescent ring, or solid-liquid interface ring. The morphology of the solid-liquid interface ring reflects the quality of wafer growth. Anomalies on the solid-liquid interface ring can affect the growth of the silicon rod, leading to a decrease in rod quality. Therefore, accurately identifying the locations of anomalies on the solid-liquid interface ring and minimizing their negative impact on crystal growth is a crucial issue. Summary of the Invention

[0004] In order to accurately determine the abnormal position on the solid-liquid interface ring and reduce the negative impact of the abnormal position on crystal growth, this application provides a wafer growth control method and control device.

[0005] In a first aspect, this application provides a wafer growth control method, which adopts the following technical solution: A wafer growth control method, comprising: The infrared image of the solid-liquid interface ring and the temperature of the molten surface are obtained. The solid-liquid interface ring is a ring-shaped structure at the junction of the silicon rod and the molten liquid. The infrared image is an infrared image collected by four cameras evenly arranged along the circumference. Based on the infrared image, the temperature distribution, outer diameter, inner diameter, and curvature of each position of the solid-liquid interface ring are determined. The temperature distribution includes the temperature gradient change at each position from the outer radial direction to the inner diameter direction. Based on the temperature distribution at each location, the outer diameter at each location, the inner diameter at each location, and the curvature at each location, it is determined whether there are abnormal locations on the solid-liquid interface ring, and based on the temperature of the molten surface, it is determined whether there are abnormal temperature regions on the molten surface. If there are abnormal locations and abnormal temperature areas, then determine the correlation between the abnormal temperature areas and the abnormal locations; The heating position of the temperature compensator is determined based on the location of the temperature anomaly area, the anomaly location, and the correlation. The operating temperature of the temperature compensator is determined based on the temperature of the temperature anomaly area and the temperature distribution at the anomaly location. The temperature compensator includes multiple compensation units. The compensation unit corresponding to the heating position is controlled to perform temperature compensation according to the operating temperature.

[0006] By employing the above technical solution, obtaining an infrared image of the solid-liquid interface ring facilitates understanding its specific characteristics. Obtaining the molten surface temperature allows for assessment of the temperature characteristics of the molten silicon within the crucible. Based on the infrared image of the solid-liquid interface ring, the temperature distribution, outer and inner diameters, and curvature at each location on the ring can be determined. Based on the temperature distribution, outer diameter, inner diameter, and curvature, the presence of abnormal locations on the solid-liquid interface ring can be accurately determined. Similarly, the presence of temperature anomalies in the molten surface can be determined. If both temperature anomalies and abnormal locations exist, the temperature anomalies will affect the abnormal locations on the solid-liquid interface ring; that is, temperature anomalies will lead to abnormal locations on the solid-liquid interface ring. Determining the correlation between temperature anomaly regions and locations, and then implementing temperature compensation intervention, requires accurately determining the heating position for temperature compensation intervention based on the location of the temperature anomaly region, the anomaly location, and the correlation between the two. The operating temperature of the temperature compensator is then determined based on the temperature distribution of the temperature anomaly region and the anomaly location. Finally, the compensation unit corresponding to the heating position on the temperature compensator is controlled to perform temperature compensation according to the determined operating temperature. This temperature compensation eliminates the anomaly location on the solid-liquid interface ring, making the silicon rod growth process less susceptible to the influence of the anomaly location on the solid-liquid interface ring. Ultimately, this achieves accurate determination of the anomaly location on the solid-liquid interface ring and reduces the negative impact of the anomaly location on crystal growth.

[0007] In another possible implementation, determining whether there are abnormal locations on the solid-liquid interface ring based on the temperature distribution at each location, the outer diameter at each location, the inner diameter at each location, and the curvature at each location includes: Based on the temperature distribution at each location, determine the temperature change curve at each location, and determine the slope difference between the temperature change curve and the preset temperature change curve. The average temperature at each location is determined based on the temperature distribution at each location, and a first difference between the average temperature and a first preset temperature is determined. Based on the slope difference and the first difference, a first characteristic value with respect to temperature is determined for each position on the solid-liquid boundary ring, wherein the first characteristic value is the first product of the slope difference and the first difference; The width of the solid-liquid interface ring at each location is determined based on the outer diameter and the inner diameter at each location, and a second difference between the width and the preset width is determined. A third difference between the curvature and the preset curvature is determined, and a second characteristic value of the structure is determined for each position on the solid-liquid boundary ring based on the second difference and the third difference; Determine whether there is an abnormal position on the solid-liquid interface ring based on the first feature value and the second feature value.

[0008] In another possible implementation, determining whether there is an abnormal location on the solid-liquid interface ring based on the first feature value and the second feature value includes: Anomaly score is determined for each position on the solid-liquid interface ring based on the first feature value, the second feature value, and their respective weights. If there is a position where an abnormal score reaches a preset score threshold, then the position that reaches the preset score threshold is determined as the abnormal position.

[0009] In another possible implementation, determining the correlation between the temperature anomaly region and the anomaly location includes: Determine the average temperature of the temperature anomaly region and the first temperature of the nearest point on the edge of the temperature anomaly region to the anomaly location. The average temperature at the abnormal location is determined based on the temperature distribution at the abnormal location, and a fourth difference between the average temperature at the abnormal location and the average temperature of the abnormal temperature region is determined. Determine the distance from the temperature anomaly area to the anomaly location; Determine the second temperature at the abnormal location on the outer diameter, and determine the fifth difference between the second temperature and the first temperature; The correlation degree is determined based on the fourth difference, distance, fifth difference, and their respective coefficients.

[0010] In another possible implementation, the heating position of the temperature compensator is determined based on the location of the temperature anomaly region, the anomaly location, and the correlation, including: Draw a line connecting the abnormal location to the location of the temperature abnormality area; Determine the second product of the anomaly score and the correlation degree of the anomaly location; The length ratio corresponding to the line is determined based on the second product, and the target point on the line is determined based on the length ratio and the length of the line. The target point is the heating position.

[0011] In another possible implementation, determining the operating temperature of the temperature compensator based on the temperature of the temperature anomaly region and the temperature distribution at the anomaly location includes: Determine the sixth difference between the temperature at the outer diameter of the abnormal location and the second preset temperature; Determine the area of ​​the temperature anomaly region, and determine the seventh difference between the average temperature of the temperature anomaly region and the temperature at other locations on the melt surface; The operating temperature of the temperature compensator is determined based on the sixth difference, area, seventh difference, and preset temperature calculation function.

[0012] In another possible implementation, the method further includes: The fitted annular shape of the solid-liquid interface ring is obtained by fitting the outer diameter and the inner diameter at each position. Calculate the difference in outer diameter and inner diameter at each position on the fitted annular pattern and the preset annular pattern, and calculate the sum of the difference in outer diameter and inner diameter at each position; Determine the average sum based on the sums at all locations; Determine the roundness of the fitted annular pattern and calculate the ratio of the sum average value to the roundness, the ratio representing the characteristic value of the solid-liquid interface ring at the real-time height during silicon rod growth; If a target solid-liquid interface ring exists with a ratio that reaches a preset ratio threshold, then the position of the target solid-liquid interface ring on the silicon rod is determined and stored.

[0013] Secondly, this application provides a wafer growth control device, which adopts the following technical solution: A wafer growth control device, comprising: Growth furnace; The crucible is placed inside the growth furnace; A temperature compensator is disposed on the outside of the crucible. The temperature compensator is ring-shaped and includes a controller and multiple arc-shaped compensation units. The controller and the multiple compensation units are electrically connected. An electronic device for performing a wafer growth control method as described in any of the first aspects above, wherein the electronic device is electrically connected to the controller.

[0014] By adopting the above technical solution, the electronic device sends a signal to the controller. After receiving the signal, the controller knows which compensation unit needs to be temperature compensated. The controller sends a signal to the compensation unit corresponding to the heating position so that the compensation unit corresponding to the heating position can perform temperature compensation, thereby eliminating the influence of abnormal positions on the solid-liquid interface ring on the growth of silicon rods. The electronic device determines the abnormal position on the solid-liquid interface ring and the heating position for temperature compensation intervention to eliminate the abnormal position according to the method described in the first aspect above, and controls the temperature compensator to perform temperature compensation intervention on the heating position. Finally, it accurately determines the abnormal position on the solid-liquid interface ring and reduces the negative impact of the abnormal position on the solid-liquid interface ring on crystal growth.

[0015] In another possible implementation, the angle of each compensation unit is 20°.

[0016] By adopting the above technical solution, the angle of the arc-shaped compensation unit is 20°, which makes the temperature compensation position more accurate.

[0017] In another possible implementation, multiple temperature compensators are arranged in the vertical direction.

[0018] By adopting the above technical solution, multiple temperature compensators can be set vertically so that the heating position that needs temperature compensation can be effectively compensated when the liquid level in the crucible is at different heights.

[0019] Thirdly, this application provides an electronic device that adopts the following technical solution: An electronic device comprising: At least one processor; Memory; At least one application, wherein the at least one application is stored in memory and configured to be executed by at least one processor, the at least one configuration being for: executing a wafer growth control method as shown in any possible implementation of the first aspect.

[0020] Fourthly, this application provides a computer-readable storage medium, which adopts the following technical solution: A computer-readable storage medium that, when the computer program is executed in a computer, causes the computer to perform a wafer growth control method as described in any one of the first aspects.

[0021] In summary, this application includes at least one of the following beneficial technical effects: Obtaining infrared images of the solid-liquid interface ring facilitates understanding its specific characteristics. Acquiring the molten surface temperature reveals the temperature characteristics of the molten silicon within the crucible. Based on the infrared image of the solid-liquid interface ring, the temperature distribution, outer and inner diameters, and curvature at each location can be determined. These parameters allow for accurate identification of any abnormal locations on the solid-liquid interface ring. Similarly, the molten surface temperature indicates the presence of temperature anomalies. If both temperature anomalies and abnormal locations exist, the temperature anomalies will influence the abnormal locations on the solid-liquid interface ring; that is, temperature anomalies will cause abnormal locations to appear on the solid-liquid interface ring. Therefore, determining the temperature anomalies... To determine the correlation between normal and abnormal locations, temperature compensation intervention requires accurately identifying the heating position based on the location of the abnormal temperature region, the abnormal location, and the correlation between the two. Then, the operating temperature of the temperature compensator is determined based on the temperature of the abnormal region and the temperature distribution at the abnormal location. Finally, the compensation unit corresponding to the heating position on the temperature compensator performs temperature compensation according to the determined operating temperature. This temperature compensation eliminates abnormal locations on the solid-liquid interface ring, making the silicon rod growth process less susceptible to the influence of abnormal locations on the solid-liquid interface ring. Ultimately, this achieves accurate identification of abnormal locations on the solid-liquid interface ring and reduces the negative impact of abnormal locations on crystal growth. Attached Figure Description

[0022] Figure 1 This is a schematic flowchart of a wafer growth control method according to an embodiment of this application.

[0023] Figure 2 This is a schematic diagram of the solid-liquid interface ring in an embodiment of this application.

[0024] Figure 3 This is a schematic diagram of the structure of a wafer growth control device according to an embodiment of this application.

[0025] Figure 4 This is another structural schematic diagram of a wafer growth control device according to an embodiment of this application.

[0026] Figure 5 This is a schematic diagram of the structure of the temperature compensator according to an embodiment of this application.

[0027] Figure 6 This is a schematic diagram of the structure of an electronic device according to an embodiment of this application.

[0028] Reference numerals: 10, silicon rod; 100, solid-liquid interface; 11, growth furnace; 111, infrared camera device; 12, crucible; 2, temperature compensator; 21, controller; 22, compensation unit; 3, electronic equipment; 31, processor; 32, bus; 33, memory; 34, transceiver. Detailed Implementation

[0029] The present application will be further described in detail below with reference to the accompanying drawings.

[0030] After reading this specification, those skilled in the art may make modifications to this embodiment without contributing any inventive step, but such modifications are protected by patent law as long as they fall within the scope of the claims of this application.

[0031] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0032] Furthermore, the term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this article, unless otherwise specified, generally indicates that the preceding and following related objects have an "or" relationship.

[0033] The embodiments of this application will now be described in further detail with reference to the accompanying drawings.

[0034] This application provides a wafer growth control method executed by an electronic device, which can be a server or a terminal device. The server can be a standalone physical server, a server cluster or distributed system composed of multiple physical servers, or a cloud server providing cloud computing services. The terminal device can be a smartphone, tablet, laptop, desktop computer, etc., but is not limited to these. The terminal device and the server can be directly or indirectly connected via wired or wireless communication. This application does not impose any limitations on this. Figure 1 As shown, the method includes steps S101, S102, S103, S104, S105, and S106, wherein, S101, acquire infrared images of the solid-liquid interface ring and the temperature of the molten surface.

[0035] Among them, the solid-liquid interface ring is a ring-shaped structure that appears at the junction of the silicon rod and the molten liquid, and the infrared image is an infrared image collected by four camera devices that are evenly arranged along the circumference.

[0036] For the embodiments of this application, such as Figure 2 As shown, the solid-liquid interface ring 100 is located at the junction of the silicon rod 10 and the molten surface. The solid-liquid interface ring 100 is generally annular, with its side interfaces being arc-shaped and concave inward. (Refer to...) Figure 3 and Figure 4 Four infrared camera devices 111 can be installed on the inner wall of the growth furnace 11. These four infrared camera devices 111 are evenly spaced along the circumference of the growth furnace 11, i.e., one infrared camera device 111 is installed every 90°, thereby acquiring infrared images of the solid-liquid interface ring 100. Each infrared camera device 111 captures images of the solid-liquid interface ring 100 within a 90° region. The temperature of the molten surface can also be obtained by the infrared camera devices 111. The electronic device 3 is connected to the infrared camera devices 111 to obtain infrared images of the solid-liquid interface ring 100.

[0037] S102, based on infrared images, determines the temperature distribution, outer diameter, inner diameter, and curvature of each position of the solid-liquid interface ring.

[0038] The temperature distribution includes the temperature gradient variation at each location along the outer radial and inner diameter directions.

[0039] In this embodiment, the electronic device can divide the solid-liquid interface ring into multiple positions according to a preset angle, for example, dividing it into 360 positions at 1° intervals or 72 positions at 5° intervals. The temperature distribution gradually increases from the outer radial direction to the inner diameter direction at each position, and the temperature distribution is proportional to the outer radial direction to the inner diameter. The electronic device approximates the solid-liquid interface ring into a circular shape based on the infrared image of the ring, and then determines the outer diameter and inner diameter of each position on the circular shape. Due to the surface tension of the melt, the side cross-section of the solid-liquid interface ring is an inwardly concave arc shape, so the electronic device determines the curvature of the side cross-section at each position.

[0040] S103 determines whether there are abnormal positions on the solid-liquid interface ring based on the temperature distribution, outer diameter, inner diameter and curvature of each position, and determines whether there are abnormal temperature areas on the melt surface based on the temperature of the melt surface.

[0041] In the embodiments of this application, the temperature distribution at each location affects the growth of the silicon rod at the corresponding location. That is, the temperature distribution at each location, to a certain extent, indicates whether it is an abnormal location. The outer diameter and inner diameter at each location indicate the morphology of the solid-liquid interface ring, and an abnormal morphology indicates whether it is an abnormal location. Curvature also indicates the morphology of the solid-liquid interface ring, and an abnormal curvature also indicates whether it is an abnormal location. That is, temperature distribution, outer diameter, inner diameter, and curvature are all key factors affecting whether each location is an abnormal location. By comprehensively considering the above four factors, including temperature distribution, the electronic device can accurately determine whether there is an abnormal location on the solid-liquid interface ring.

[0042] Electronic devices can determine areas below the set melt temperature by comparing the temperature at various points on the melt surface with the set melt temperature, i.e., temperature anomaly areas.

[0043] S104, if there are abnormal locations and abnormal temperature areas, determine the correlation between the abnormal temperature areas and the abnormal locations.

[0044] In the embodiments of this application, if there are abnormal locations and abnormal temperature regions, it means that the abnormal temperature regions will affect the abnormal locations. The abnormal temperature regions cause abnormal locations to appear on the solid-liquid interface ring. Therefore, the electronic device determines the correlation between the abnormal temperature regions and the abnormal locations.

[0045] S105, determine the heating position of the temperature compensator based on the location of the temperature anomaly area, the anomaly location, and the correlation, and determine the operating temperature of the temperature compensator based on the temperature of the temperature anomaly area and the temperature distribution at the anomaly location.

[0046] The temperature compensator includes multiple compensation units.

[0047] It's important to understand that if there are no abnormal temperature areas but only abnormal locations, the electronic device will not determine the correlation and will directly determine the heating position of the temperature compensator based on the abnormal location. Specifically, the electronic device determines the distance from the temperature compensator to the abnormal location based on the degree of abnormality at the abnormal location, and thus determines the heating position.

[0048] In this embodiment, after identifying the abnormal location, temperature compensation intervention is required to ensure that the temperature at the abnormal location reaches the required level. The electronic device determines the heating position for temperature compensation intervention based on a comprehensive analysis of the location of the temperature anomaly area, the abnormal location itself, and the correlation between the two. The temperature distribution at the abnormal location and the temperature of the abnormal area are related to the required operating temperature of the temperature compensator; therefore, the electronic device determines the accurate operating temperature of the temperature compensator based on a comprehensive analysis of the temperatures of the abnormal area and the abnormal location.

[0049] S106, control the compensation unit corresponding to the heating position to perform temperature compensation according to the operating temperature.

[0050] For the embodiments of this application, refer to Figure 3 and Figure 5 The temperature compensator 2 includes a controller 21 and multiple arc-shaped compensation units 22, each of which is electrically connected to the controller 21. The electronic device 3 is electrically connected to the controller 31 of the temperature compensator 2. The electronic device 3 can determine the heating position based on the image captured by the infrared camera device 111 in step S101. Then, it determines the nearest compensation unit 22 based on the heating position. The electronic device generates a control signal based on the heating position and operating temperature and sends the control signal to the temperature compensator 2. Upon receiving the control signal, the temperature compensator 2 can control the nearest compensation unit 22 to perform temperature compensation at the heating position via the controller 21. After temperature compensation intervention, abnormal areas can be effectively eliminated, making them normal, thereby reducing the negative impact of abnormal positions on the solid-liquid interface ring on crystal growth. Since the crucible 12 is rotating, the melt in the crucible 12 is also rotating, and therefore the heating position is also rotating. The temperature compensator 2 rotates with the crucible 12, so the determined compensation unit 22 can continuously perform temperature compensation at the heating position.

[0051] One possible implementation of this application embodiment involves determining whether there are abnormal locations on the solid-liquid interface ring in step S103 based on the temperature distribution, outer diameter, inner diameter, and curvature of each location. Specifically, this includes steps S1031 (not shown in the figure), S1032 (not shown in the figure), S1033 (not shown in the figure), S1034 (not shown in the figure), S1035 (not shown in the figure), and S1036 (not shown in the figure). S1031, determine the temperature change curve for each location based on the temperature distribution at each location, and determine the slope difference between the temperature change curve and the preset temperature change curve.

[0052] In this embodiment, the temperature change curve is a curve showing the change in temperature with location. The electronic device can map the temperature distribution at each location to a preset coordinate system, where the horizontal axis represents the distance from the outer diameter to the inner diameter, and the vertical axis represents temperature. After mapping to the preset coordinate system, connecting the temperature points yields a line graph of the temperature distribution at each location. The line graph is then linearly fitted using the Origin plugin to obtain a linear function of the temperature distribution at each location. The preset temperature change curve represents the temperature distribution at the solid-liquid interface ring under standard normal conditions. The electronic device processes the temperature distribution under standard normal conditions in the same way to obtain the preset temperature change curve, i.e., a linear function under standard normal conditions. After determining these two linear functions, the electronic device obtains their corresponding slopes. The slope represents the degree of change in the temperature gradient. The electronic device calculates the difference between the two slopes and takes the absolute value to obtain the slope difference value. A larger slope difference value at a certain location indicates a greater difference in temperature gradient compared to the standard normal conditions, and a greater likelihood of being at an abnormal location. The slope difference value more accurately represents the difference between the temperature distribution at each location and the temperature distribution under standard normal conditions.

[0053] S1032, determine the average temperature of each location based on the temperature distribution at each location, and determine the first difference between the average temperature and the first preset temperature.

[0054] In this embodiment of the application, the electronic device calculates the average temperature of each location using an average value calculation formula, and uses the average temperature to represent the overall temperature level of each location. The first preset temperature is the temperature level of the solid-liquid interface ring under standard normal conditions. Due to uneven heating, the temperature at some locations on the solid-liquid interface ring may be lower than the first preset temperature. The electronic device calculates the difference between the average temperature and the first preset temperature and takes the absolute value of the difference to obtain the first difference value. The first difference value represents the difference between the overall temperature level of each location and the temperature level under standard conditions. The larger the first difference value at a location, the greater the possibility that the location is an abnormal location.

[0055] S1033, determine the first characteristic value of temperature at each position on the solid-liquid boundary ring based on the slope difference and the first difference.

[0056] The first characteristic value is the first product of the slope difference and the first difference.

[0057] In the embodiments of this application, both the slope difference and the first difference are features representing whether each location belongs to an abnormal location in terms of temperature, and both are proportional to the probability of belonging to an abnormal location. The electronic device multiplies the slope difference and the first difference for each location to obtain a first product, which is the first feature value for each location. The first feature value comprehensively considers the superimposed effects of both temperature distribution and overall distribution, making the accuracy of the first feature value in representing an abnormal location in terms of temperature higher.

[0058] S1034, determine the width of the solid-liquid interface ring at each location based on the outer diameter and the inner diameter at each location, and determine a second difference between the width and the preset width.

[0059] In the embodiments of this application, the electronic device can obtain the width of the solid-liquid interface ring at each position by subtracting the inner diameter from the outer diameter at each position. The preset width is the width of the solid-liquid interface ring under standard normal conditions. Therefore, the electronic device obtains the difference by subtracting the preset width from the width of the solid-liquid interface ring at each position and takes the absolute value of the difference to obtain the second difference value. The larger the second difference value, the greater the difference between the solid-liquid interface ring at each position and the solid-liquid interface ring under standard conditions, and the higher the possibility of it being an abnormal position.

[0060] S1035, determine the third difference between the curvature and the preset curvature, and determine the second characteristic value of the structure at each position on the solid-liquid boundary ring based on the second difference and the third difference.

[0061] In this embodiment, the preset curvature is used as the curvature of the solid-liquid interface ring under standard normal conditions. The electronic device subtracts the preset curvature from the curvature at each location to obtain a curvature difference, and takes the absolute value of the curvature difference to obtain a third difference. The larger the third difference at a certain location, the higher the probability that the location belongs to an abnormal location. The second and third differences are key features representing abnormal locations at each location on the solid-liquid interface ring. Therefore, the electronic device can normalize the second and third differences respectively to obtain their normalized values. Then, the electronic device multiplies the normalized value of the second difference by the normalized value of the third difference to obtain the second feature value. The normalization operation eliminates the influence of different dimensions. The second feature value comprehensively considers the superimposed influence of the width and curvature of the solid-liquid interface ring, making the accuracy of the second feature value in representing abnormal locations in terms of the solid-liquid interface ring morphology higher. The second and third differences can be values ​​obtained by taking absolute values.

[0062] S1036, determine whether there is an abnormal position on the solid-liquid interface ring based on the first characteristic value and the second characteristic value.

[0063] In summary, the first and second characteristic values ​​are key factors that characterize each location as an abnormal location from the aspects of temperature and morphology at each position on the solid-liquid interface ring, respectively. Therefore, electronic devices can accurately determine whether there are abnormal locations on the solid-liquid interface ring by comprehensively considering the first and second characteristic values.

[0064] It should be noted that the preset temperature change curve, first preset temperature, preset width, and preset curvature are different for different silicon rod preparation sizes and preparation conditions. The embodiments in this application are only examples of a certain preparation size and preparation conditions.

[0065] One possible implementation of this application embodiment is that step S1036, which determines whether there is an abnormal position on the solid-liquid interface ring based on the first feature value and the second feature value, specifically includes steps one and two, wherein... Step 1: Determine the anomaly score for each position on the solid-liquid interface ring based on the first feature value, the second feature value, and their respective weights.

[0066] Step 2: If there is a position where the score reaches the preset score threshold, then the position that reaches the preset score threshold is determined to be an abnormal position.

[0067] In this embodiment, the first feature value represents an abnormality in terms of temperature, and the second feature value represents an abnormality in terms of morphology. The two feature values ​​have different degrees of influence on the location of the abnormality. The operator assigns corresponding weights to the first and second feature values ​​and stores them in the electronic device. The electronic device normalizes the first and second feature values ​​and then uses their respective weights to perform a weighted calculation to obtain the abnormality score for each location. A preset score threshold serves as the boundary point for excessively high abnormality scores. The electronic device compares the abnormality score for each location with the preset score threshold to determine whether there are any abnormal locations that reach the preset score threshold. Locations that reach the preset score threshold are considered abnormal locations. By assigning different weights to the first and second feature values ​​for analysis and calculation, the abnormality locations can be determined more accurately.

[0068] One possible implementation of this application embodiment involves determining the correlation between the temperature anomaly region and the anomaly location in step S104, specifically including steps S1041 (not shown in the figure), S1042 (not shown in the figure), S1043 (not shown in the figure), S1044 (not shown in the figure), and S1045 (not shown in the figure), wherein... S1041, determine the average temperature of the temperature anomaly region and the first temperature of the nearest point on the edge of the temperature anomaly region to the anomaly location.

[0069] In this embodiment, the electronic device divides the temperature anomaly region into multiple sub-regions and calculates the average temperature within each sub-region. Then, by averaging the average temperatures across all sub-regions, the average temperature of the entire temperature anomaly region is obtained. The electronic device calculates the distance from each point on the edge of the temperature anomaly region to the anomaly location using a two-point distance formula, compares the distances to determine the nearest point, and then determines the first temperature of the nearest point on the edge of the temperature anomaly region. The average temperature characterizes the overall temperature level of the temperature anomaly region, and the first temperature of the nearest point on the edge is the temperature value that has the greatest impact on the anomaly location. If multiple anomaly locations exist, the electronic device uses the nearest anomaly location within each temperature anomaly region for the calculations described in this embodiment.

[0070] S1042, determine the average temperature of the abnormal location based on the temperature distribution at the abnormal location, and determine the fourth difference between the average temperature of the abnormal location and the average temperature of the temperature abnormal area.

[0071] In this embodiment of the application, the electronic device can determine the average temperature of the abnormal location using the method described in step S1032. The average temperature represents the overall temperature level of the abnormal location. Then, the electronic device subtracts the average temperature of the abnormal temperature area from the average temperature to obtain a difference, and takes the absolute value of this difference to obtain a fourth difference. The smaller the fourth difference, the closer the temperature level of the abnormal location is to the temperature level of the abnormal temperature area, and the higher the possibility that the abnormal temperature area will affect the abnormal location, thus the higher the correlation.

[0072] S1043, determine the distance from the temperature anomaly area to the anomaly location.

[0073] In the embodiments of this application, the electronic device can extract the contour point set of the temperature anomaly region and calculate the average value of the coordinates in the contour point set to obtain the center point coordinates. Using the center point coordinates to characterize the location of the temperature anomaly region is more accurate. Then, the electronic device uses the distance formula between two points to calculate the distance from the anomaly location to the temperature anomaly region. The smaller the distance, the greater the correlation between the temperature anomaly region and the anomaly location.

[0074] S1044, determine the second temperature at the abnormal location on the outer diameter, and determine the fifth difference between the second temperature and the first temperature.

[0075] In this embodiment of the application, the electronic device determines the second temperature on the outer diameter from the temperature distribution at the abnormal location, then calculates the difference between the second temperature and the first temperature and takes the absolute value to obtain a fifth difference value. The smaller the fifth difference value, the smaller the temperature difference between the outer diameter at the abnormal location and the temperature at the closest point to the abnormal location in the temperature anomaly region, and the greater the correlation between the temperature anomaly region and the abnormal location.

[0076] S1045, the correlation degree is determined based on the fourth difference, distance, fifth difference and their respective coefficients.

[0077] In summary, the fourth difference, distance, and fifth difference are all key factors influencing the correlation between temperature anomaly areas and anomaly locations, and their influence varies. Since the fourth difference, distance, and fifth difference are all inversely proportional to the correlation, the electronic device can take the reciprocals of these three factors, normalize them, and then use their respective coefficients to weightedly calculate a score. A higher score indicates a higher correlation. The corresponding coefficients can be set and stored in the electronic device by staff. Determining the correlation based on the temperature relationship and distance between the temperature anomaly area and the anomaly location is more accurate.

[0078] One possible implementation of this application embodiment is that step S105 determines the heating position of the temperature compensator based on the location of the temperature anomaly region, the anomaly location, and the correlation, specifically including steps S1051 (not shown in the figure), S1052 (not shown in the figure), and S1053 (not shown in the figure), wherein... S1051, connect the abnormal location with the location of the temperature abnormal area.

[0079] In this embodiment of the application, since the abnormal location is a fan-shaped area with a certain curvature, the electronic device can determine the center point of each abnormal location using the method described in step S1043. The electronic device can then connect the center point of the abnormal location with the center point of the temperature anomaly region.

[0080] S1052, determine the second product of the anomaly score and the correlation degree of the anomaly location.

[0081] In the embodiments of this application, a higher anomaly score indicates a greater impact of the abnormal location on silicon rod growth, requiring temperature compensation intervention to be closer to the abnormal location. A higher correlation indicates a greater negative impact of the temperature anomaly region on the abnormal location, requiring temperature compensation intervention to be closer to the abnormal location. Therefore, the electronic device can obtain a second product by multiplying the anomaly score of the abnormal location by the correlation, which integrates the effects of both the anomaly score and the correlation.

[0082] S1053, determine the length proportion on the connecting line based on the second product, and determine the target point on the connecting line based on the length proportion and the length of the connecting line.

[0083] The target point is the heating location.

[0084] In this embodiment, the operator can obtain a function for calculating the proportion using the second product through extensive experiments and calculations. Multiplying the proportion by the length of the line connecting the abnormal location and the temperature anomaly region yields the target point, i.e., the heating position. A larger second product requires the temperature compensation intervention position to be closer to the abnormal location, thus enabling rapid elimination of the abnormality. The electronic device substitutes the second product into the set function to obtain a proportion, then multiplies this proportion by the length of the line to obtain a length value. Using the temperature anomaly region as the starting point and the determined length value as the target point, the temperature compensation position, i.e., the heating position of the temperature compensator, is obtained. If no temperature anomaly location exists, the electronic device directly determines the proportion based on the anomaly score of the abnormal location, determines the length from the abnormal location to the crucible edge, and then uses the proportion and length to determine the target point, thus determining the heating position.

[0085] One possible implementation of this application embodiment is that step S105 determines the operating temperature of the temperature compensator based on the temperature of the temperature anomaly area and the temperature distribution at the anomaly location. Specifically, this includes steps S1054 (not shown in the figure), S1055 (not shown in the figure), and S1056 (not shown in the figure). S1054, determine the sixth difference between the temperature at the outer diameter of the abnormal location and the second preset temperature.

[0086] In this embodiment, the second preset temperature is the temperature at the outer diameter of the solid-liquid interface ring under standard normal conditions. The electronic device subtracts the second preset temperature from the temperature at the outer diameter of the abnormal location and takes the absolute value to obtain the sixth difference. The smaller the second difference, the smaller the temperature difference from the outer diameter under standard normal conditions, and the lower the temperature at which temperature compensation intervention is required.

[0087] S1055, determine the area of ​​the temperature anomaly region and determine the seventh difference between the average temperature of the temperature anomaly region and the temperature at other locations on the melt surface.

[0088] In this embodiment, the electronic device determines the outline of the temperature anomaly region and the number of pixels within the outline. The number of pixels can be used to characterize the area of ​​the temperature anomaly region. The larger the area of ​​the temperature anomaly region, the higher the temperature that requires temperature compensation intervention, so that the temperature of the temperature anomaly region can more quickly reach the set temperature of the molten surface. The electronic device determines a seventh difference between the average temperature of the temperature anomaly region and the temperature of other locations on the molten surface. The larger the seventh difference, the lower the temperature level of the temperature anomaly region, and the higher the temperature compensation intervention required to quickly raise the temperature of the temperature anomaly region to the same level as other locations on the molten surface.

[0089] S1056 determines the operating temperature of the temperature compensator based on the sixth difference, area, seventh difference, and a preset temperature calculation function.

[0090] In summary, the sixth difference, area, and seventh difference are all key factors affecting the operating temperature of the temperature compensator. Operators can pre-set a preset temperature calculation function based on numerous experiments and calculations. This preset function calculates the operating temperature based on the sixth, area, and seventh differences. The electronic device then substitutes the determined sixth, area, and seventh differences into the preset temperature calculation function to determine the operating temperature of the temperature compensator. A more accurate operating temperature is obtained by comprehensively analyzing the sixth difference between the temperature at the outer diameter and the standard temperature, the area of ​​the temperature anomaly region, and the seventh difference between the temperature of the temperature anomaly region and the temperature at other molten locations. Alternatively, the electronic device can input the sixth, area, and seventh differences into a trained neural network model for operating temperature calculation; this neural network model can be a convolutional neural network. Furthermore, the electronic device may store the correlation between the sixth, area, and seventh differences and the operating temperature, allowing it to find the corresponding operating temperature based on these values.

[0091] One possible implementation of this application embodiment includes steps Sa (not shown in the figure), Sb (not shown in the figure), Sc (not shown in the figure), Sd (not shown in the figure), and Se (not shown in the figure), wherein... Sa, based on the outer diameter and inner diameter at each position, obtains the fitted annular shape of the solid-liquid interface ring.

[0092] In the embodiments of this application, the electronic device can obtain a fitted circular ring pattern of the solid-liquid interface ring by sequentially connecting the outer diameter and inner diameter at continuous and adjacent positions.

[0093] Sb calculates the difference in outer diameter and inner diameter at each position on the fitted annular shape and the preset annular shape, and calculates the sum of the difference in outer diameter and inner diameter at each position.

[0094] In this embodiment, the preset annular pattern is a standard solid-liquid interface ring pattern. The electronic device calculates the outer diameter difference by subtracting the outer diameter at each position from the corresponding outer diameter on the preset annular pattern, and similarly calculates the inner diameter difference. Then, the outer diameter difference and inner diameter difference at each position are summed to obtain a total. The larger the total at a certain position, the greater the difference between the outer diameter and inner diameter at that position and the outer diameter and inner diameter at the corresponding position on the solid-liquid interface ring, indicating that the solid-liquid interface ring at that position is more likely to have an impact on the growth of the silicon rod.

[0095] Sc determines the average sum based on the sums at all locations.

[0096] In the embodiments of this application, the electronic device calculates the sum average value at all locations using the average value calculation formula. The larger the sum average value, the greater the difference between the solid-liquid interface ring and the standard solid-liquid interface ring. In this case, the solid-liquid interface ring is more likely to affect the growth of the silicon rod at this moment.

[0097] Sd determines the roundness of the fitted torus and calculates the ratio of the summation mean to the roundness.

[0098] The ratio represents the characteristic value of the solid-liquid interface ring at the real-time height during silicon rod growth.

[0099] In the embodiments of this application, roundness refers to the maximum deviation of the actual contour from the ideal circle. It can be obtained by subtracting the minimum outer diameter from the maximum outer diameter of the fitted annular shape, dividing by the outer diameter of the preset annular shape, and then multiplying by 100%. Similarly, the roundness of the inner diameter is obtained by subtracting the minimum inner diameter from the maximum inner diameter of the fitted annular shape, dividing by the inner diameter of the preset annular shape, and then multiplying by 100%. The average of the roundness with respect to the outer diameter and the roundness with respect to the inner diameter is then used to obtain the roundness of the fitted annular shape. A larger roundness of the solid-liquid interface ring at a certain point indicates a more standard solid-liquid interface ring and a smaller impact on silicon rod growth at that point. Therefore, electronic devices use the sum-of-the-parts average divided by the roundness to obtain the ratio. With the sum-of-the-parts average as the numerator and the roundness as the denominator, a larger ratio indicates a greater impact on silicon rod growth, and vice versa.

[0100] Se, if there is a target solid-liquid interface ring with a ratio that reaches a preset ratio threshold, then the position of the target solid-liquid interface ring on the silicon rod is determined and stored.

[0101] In this embodiment of the application, a preset ratio threshold is used as a critical point for whether the ratio is too large. If the ratio reaches the preset ratio threshold, it indicates that a target solid-liquid interface ring exists. The target solid-liquid interface ring differs too much from the solid-liquid interface ring under the standard normal state, and the silicon rod at this location needs to be focused on for testing. Therefore, the electronic device records the current growth height of the silicon rod, i.e. the position of the target interface ring. The electronic device stores the position of the target interface ring in a cloud server or local storage medium so that subsequent staff can retrieve the positions on these silicon rods that need to be focused on for testing.

[0102] The above embodiments describe a wafer growth control method from the perspective of process flow. The following embodiments describe a wafer growth control device, and details are provided in the following embodiments.

[0103] This application provides a wafer growth control device, such as... Figure 3 and Figure 4As shown, a wafer growth control device may specifically include a growth furnace 11, a crucible 12 disposed within the growth furnace 11, a temperature compensator 2 disposed on a support of the crucible 12, and electronic equipment 3. The crucible 12 may be a quartz crucible 12, see reference 12. Figure 5 The temperature compensator 2 includes a controller 21 and multiple arc-shaped compensation units 22. The compensation units 22 can be made of high-temperature resistant material and may contain heating wires (not shown) for temperature compensation. The heating wires are located at the end of the compensation unit 22 that contacts the outer wall of the crucible 12. Preferably, the arc angle of each compensation unit 22 is 20°, therefore the temperature compensator 2 consists of 18 compensation units 22. In other embodiments, the angle of the compensation units 22 can also be 15°, 30°, 40°, 45°, etc.

[0104] Reference Figure 3 and Figure 4 To acquire infrared images of the solid-liquid interface ring, four infrared camera devices 111 can be installed inside the growth furnace 11. The electronic device 3 is signal-connected to the infrared camera devices 111. Through the above method embodiment, the electronic device 3 can accurately determine the abnormal position on the solid-liquid interface ring and the heating position for temperature compensation intervention, ultimately achieving the effect of accurately determining the abnormal position on the solid-liquid interface ring and reducing the negative impact of the abnormal position on crystal growth. The electronic device 3 is electrically connected to the controller 21 of the temperature compensator 2. After determining the heating position, the electronic device 3 can know the actual position of the heating position in the crucible 12 through the infrared camera devices 111. Then, the electronic device 3 can calculate the nearest compensation unit 22 to the heating position using the coordinates of the heating position and the coordinates of each compensation unit 22 through the distance formula between two points. The electronic device 3 then generates a control signal based on the nearest compensation unit 22 and sends it to the controller 21. After receiving the control signal, the controller 21 can control the nearest compensation unit 22 to operate, thereby performing temperature compensation on the heating position according to the operating temperature. Since the molten metal rotates with the crucible 12, the heating position changes. However, the temperature compensator 2 rotates synchronously with the crucible 12 through its connection to the support of the crucible 12. Therefore, the determined compensation unit 22 can continuously compensate for the temperature of the heating position. As the liquid level of the molten metal in the crucible 12 decreases during the growth of the silicon rod, multiple temperature compensators 2 can be vertically arranged to provide effective and continuous temperature compensation for different liquid levels.

[0105] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the wafer growth control equipment described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0106] This application provides an electronic device, such as... Figure 6As shown, Figure 6 The illustrated electronic device 3 includes a processor 31 and a memory 33. The processor 31 and the memory 33 are connected, for example, via a bus 32. Optionally, the electronic device 3 may also include a transceiver 34. It should be noted that in practical applications, the transceiver 34 is not limited to one type, and the structure of this electronic device 3 does not constitute a limitation on the embodiments of this application.

[0107] Processor 31 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It can implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the disclosure of this application. Processor 31 may also be a combination that implements computational functions, such as including one or more microprocessor combinations, a combination of a DSP and a microprocessor, etc.

[0108] Bus 32 may include a pathway for transmitting information between the aforementioned components. Bus 32 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus, etc. Bus 32 can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 6 The symbol is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.

[0109] The memory 33 may be a ROM (Read Only Memory) or other type of static storage device capable of storing static information and instructions, RAM (Random Access Memory) or other type of dynamic storage device capable of storing information and instructions, or EEPROM (Electrically Erasable Programmable Read Only Memory), CD-ROM (Compact Disc Read Only Memory) or other optical disc storage, optical disc storage (including compressed optical discs, laser discs, optical discs, digital universal optical discs, Blu-ray discs, etc.), magnetic disk storage media or other magnetic storage devices, or any other medium capable of carrying or storing desired program code in the form of instructions or data structures and accessible by a computer, but not limited thereto.

[0110] The memory 33 is used to store application code that executes the solution of this application, and its execution is controlled by the processor 31. The processor 31 is used to execute the application code stored in the memory 33 to implement the content shown in the foregoing method embodiments.

[0111] Electronic devices include, but are not limited to: mobile terminals such as mobile phones, laptops, digital radio receivers, PDAs (personal digital assistants), PADs (tablet computers), PMPs (portable multimedia players), and in-vehicle terminals (such as in-vehicle navigation terminals), as well as fixed terminals such as digital TVs and desktop computers. Servers can also be included. Figure 6 The electronic device shown is merely an example and should not impose any limitation on the functionality and scope of use of the embodiments of this application.

[0112] This application provides a computer-readable storage medium storing a computer program that, when run on a computer, enables the computer to execute the corresponding content in the aforementioned method embodiments.

[0113] Compared with related technologies, the infrared image of the solid-liquid interface ring obtained in this application embodiment facilitates understanding the specific characteristics of the solid-liquid interface ring. Obtaining the surface temperature of the molten silicon facilitates understanding the temperature characteristics of the molten silicon in the crucible. Based on the infrared image of the solid-liquid interface ring, the temperature distribution, outer diameter, inner diameter, and curvature at each location on the solid-liquid interface ring can be determined. Based on the temperature distribution, outer diameter, inner diameter, and curvature, it is possible to accurately determine whether there are abnormal locations on the solid-liquid interface ring. Based on the surface temperature of the molten silicon, it is possible to determine whether there are abnormal temperature regions in the molten silicon. If abnormal temperature regions and abnormal locations exist, the abnormal temperature regions will affect the abnormal locations on the solid-liquid interface ring; that is, abnormal temperature regions will cause abnormal locations to appear on the solid-liquid interface ring. Therefore, determining the correlation between temperature anomaly regions and anomaly locations, and then implementing temperature compensation intervention, requires comprehensively and accurately determining the heating position for temperature compensation intervention based on the location of the temperature anomaly region, the anomaly location, and the correlation between the two. The operating temperature of the temperature compensator is then determined based on the temperature distribution of the temperature anomaly region and the anomaly location. Finally, the compensation unit corresponding to the heating position on the temperature compensator is controlled to perform temperature compensation according to the determined operating temperature. This temperature compensation eliminates the anomaly location on the solid-liquid interface ring, making the silicon rod growth process less susceptible to the influence of the anomaly location on the solid-liquid interface ring. Ultimately, this achieves accurate determination of the anomaly location on the solid-liquid interface ring and reduces the negative impact of the anomaly location on crystal growth.

[0114] It should be understood that although the steps in the flowcharts of the accompanying figures are shown sequentially as indicated by the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the accompanying figures may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily completed at the same time, but can be executed at different times, and their execution order is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the sub-steps or stages of other steps.

[0115] The above are only some embodiments of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A method for controlling wafer growth, characterized in that, include: The infrared image of the solid-liquid interface ring and the temperature of the molten surface are obtained. The solid-liquid interface ring is a ring-shaped structure at the junction of the silicon rod and the molten liquid. The infrared image is an infrared image collected by four cameras evenly arranged along the circumference. Based on the infrared image, the temperature distribution, outer diameter, inner diameter, and curvature of each position of the solid-liquid interface ring are determined. The temperature distribution includes the temperature gradient change at each position from the outer radial direction to the inner diameter direction. Based on the temperature distribution at each location, the outer diameter at each location, the inner diameter at each location, and the curvature at each location, it is determined whether there are abnormal locations on the solid-liquid interface ring, and based on the temperature of the molten surface, it is determined whether there are abnormal temperature regions on the molten surface. If there are abnormal locations and abnormal temperature areas, then determine the correlation between the abnormal temperature areas and the abnormal locations; The heating position of the temperature compensator is determined based on the location of the temperature anomaly area, the anomaly location, and the correlation. The operating temperature of the temperature compensator is determined based on the temperature of the temperature anomaly area and the temperature distribution at the anomaly location. The temperature compensator includes multiple compensation units. The compensation unit corresponding to the heating position is controlled to perform temperature compensation according to the operating temperature.

2. The wafer growth control method according to claim 1, characterized in that, The determination of whether there are abnormal locations on the solid-liquid interface ring based on the temperature distribution, outer diameter, inner diameter, and curvature at each location includes: Based on the temperature distribution at each location, determine the temperature change curve at each location, and determine the slope difference between the temperature change curve and the preset temperature change curve. The average temperature at each location is determined based on the temperature distribution at each location, and a first difference between the average temperature and a first preset temperature is determined. Based on the slope difference and the first difference, a first characteristic value with respect to temperature is determined for each position on the solid-liquid boundary ring, wherein the first characteristic value is the first product of the slope difference and the first difference; The width of the solid-liquid interface ring at each location is determined based on the outer diameter and the inner diameter at each location, and a second difference between the width and the preset width is determined. A third difference between the curvature and the preset curvature is determined, and a second characteristic value of the structure is determined for each position on the solid-liquid boundary ring based on the second difference and the third difference; Determine whether there is an abnormal position on the solid-liquid interface ring based on the first feature value and the second feature value.

3. The wafer growth control method according to claim 2, characterized in that, The step of determining whether there is an abnormal location on the solid-liquid interface ring based on the first feature value and the second feature value includes: Anomaly score is determined for each position on the solid-liquid interface ring based on the first feature value, the second feature value, and their respective weights. If there is a position where an abnormal score reaches a preset score threshold, then the position that reaches the preset score threshold is determined as the abnormal position.

4. The wafer growth control method according to claim 1, characterized in that, Determining the correlation between the temperature anomaly region and the anomaly location includes: Determine the average temperature of the temperature anomaly region and the first temperature of the nearest point on the edge of the temperature anomaly region to the anomaly location. The average temperature at the abnormal location is determined based on the temperature distribution at the abnormal location, and a fourth difference between the average temperature at the abnormal location and the average temperature of the abnormal temperature region is determined. Determine the distance from the temperature anomaly area to the anomaly location; Determine the second temperature at the abnormal location on the outer diameter, and determine the fifth difference between the second temperature and the first temperature; The correlation degree is determined based on the fourth difference, distance, fifth difference, and their respective coefficients.

5. The wafer growth control method according to claim 3, characterized in that, The heating position of the temperature compensator is determined based on the location of the temperature anomaly region, the anomaly location, and the correlation, including: Draw a line connecting the abnormal location to the location of the temperature abnormality area; Determine the second product of the anomaly score and the correlation degree of the anomaly location; The length ratio corresponding to the line is determined based on the second product, and the target point on the line is determined based on the length ratio and the length of the line. The target point is the heating position.

6. The wafer growth control method according to claim 1, characterized in that, Determining the operating temperature of the temperature compensator based on the temperature of the abnormal temperature region and the temperature distribution at the abnormal location includes: Determine the sixth difference between the temperature at the outer diameter of the abnormal location and the second preset temperature; Determine the area of ​​the temperature anomaly region, and determine the seventh difference between the average temperature of the temperature anomaly region and the temperature at other locations on the melt surface; The operating temperature of the temperature compensator is determined based on the sixth difference, area, seventh difference, and preset temperature calculation function.

7. The wafer growth control method according to claim 1, characterized in that, The method further includes: The fitted annular shape of the solid-liquid interface ring is obtained by fitting the outer diameter and the inner diameter at each position. Calculate the difference in outer diameter and inner diameter at each position on the fitted annular pattern and the preset annular pattern, and calculate the sum of the difference in outer diameter and inner diameter at each position; Determine the average sum based on the sums at all locations; Determine the roundness of the fitted annular pattern and calculate the ratio of the sum average value to the roundness, the ratio representing the characteristic value of the solid-liquid interface ring at the real-time height during silicon rod growth; If a target solid-liquid interface ring exists with a ratio that reaches a preset ratio threshold, then the position of the target solid-liquid interface ring on the silicon rod is determined and stored.

8. A wafer growth control device, characterized in that, include: Growth furnace; The crucible is placed inside the growth furnace; A temperature compensator is disposed on the outside of the crucible. The temperature compensator is ring-shaped and includes a controller and multiple arc-shaped compensation units. The controller and the multiple compensation units are electrically connected. An electronic device for performing a wafer growth control method according to any one of claims 1 to 7, wherein the electronic device is electrically connected to the controller.

9. A wafer growth control device according to claim 8, characterized in that: The angle of each compensation unit is 20°.

10. A wafer growth control device according to claim 8, characterized in that, Multiple temperature compensators are installed in the vertical direction.

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