A reflective laser direct writing system

Abstract

The application relates to the technical field of semiconductor manufacturing, and discloses a reflective laser direct writing system which comprises a laser light source, a first mirror module, a second mirror module, a micro mirror array, a mask plate and a workbench. The first mirror module is arranged between the laser light source and the mask plate, and comprises a plurality of first mirrors. The micro mirror array is arranged between any two first mirrors, and is used for forming a point light source array from a laser beam. The mask plate is provided with a plurality of hollow regions, and the first mirror module and the micro mirror array are used for cooperating to reflect the point light source array to the hollow regions. The second mirror module is arranged between the mask plate and the workbench, the workbench is used for placing a device to be processed, the surface of the device is coated with photoresist, and the second mirror module is used for reflecting the point light source array reflected by the mask plate to the photoresist of the device. The above-mentioned reflective laser direct writing system can be used for processing micro-nano size patterns.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a reflective laser direct writing system. Background Technology

[0002] Laser direct writing is an important technology in semiconductor manufacturing. When the laser wavelength is short, it can be used for high-precision mask manufacturing or wafer fabrication. For laser wavelengths less than 100nm, reflective optical elements are typically required due to the high optical loss of transmissive optical components. However, there is currently no mature reflective laser direct writing system applicable to wavelengths less than 100nm. Summary of the Invention

[0003] This application provides a reflective laser direct writing system that can improve the accuracy of laser direct writing, so as to facilitate its application to the processing of micro-nano-sized patterns.

[0004] This application provides a reflective laser direct writing system, including a laser source, a first reflector module, a second reflector module, a micro-reflector array, a mask, and a worktable;

[0005] The first reflector module is disposed between the laser source and the mask plate. The first reflector module includes a plurality of first reflectors, which are respectively used to reflect the laser beam emitted by the laser source.

[0006] The micromirror array is disposed between two of the first mirrors, and the micromirror array is used to form the laser beam into a point source array.

[0007] The mask plate has multiple hollow areas, and the first reflector module and the micro reflector array are used to work together to reflect the point light source array to each of the hollow areas.

[0008] The second reflector module is disposed between the mask and the worktable. The worktable is used to place the device to be processed. The surface of the device is coated with photoresist. The second reflector module is used to reflect the point light source array reflected by the mask onto the photoresist of the device.

[0009] The reflective laser direct writing system provided in this application comprises a first reflector module, a second reflector module, and a micro-mirror array. The laser beam emitted from the laser source forms a point light source array when passing through the micro-mirror array. After reflection by the first reflector, the point light source array illuminates the cutout area of ​​a photomask. The photomask then reflects the point light source array, and finally, after reflection by the second reflector module, it illuminates the surface of a device placed on a worktable, exposing the photoresist on the device surface to determine the location and shape to be etched. Due to the low loss of the reflectors, the laser beam loss during propagation is reduced, thereby improving the exposure accuracy of the laser beam. Furthermore, due to the characteristics of the micro-mirror array, the laser beam can be exposed on the photoresist in the form of a point light source array, ensuring precise identification of the location to be etched, thus improving manufacturing accuracy. Therefore, the reflective laser direct writing system provided in this application can improve the accuracy of laser direct writing and facilitate the processing of micro- and nano-sized patterns.

[0010] In some possible implementations, the micromirror array includes a plurality of micromirrors, which are either convex or concave mirrors.

[0011] In some possible implementations, when the reflector is a convex mirror, the micromirror includes a first substrate, a compensation layer and a first reflective layer stacked sequentially, wherein the contact surface between any two adjacent structures of the first substrate, the compensation layer and the first reflective layer is a convex surface curved toward the first substrate, and the side surface of the first reflective layer away from the compensation layer is a convex surface curved toward the first substrate.

[0012] In some possible implementations, when the reflector is a concave mirror, the micro-reflector includes a first substrate, a compensation layer and a first reflective layer stacked sequentially, wherein the surface in contact between any two adjacent structures of the first substrate, the compensation layer and the first reflective layer is a concave surface that is bent away from the first substrate, and the side surface of the first reflective layer away from the compensation layer is a concave surface that is bent away from the first substrate.

[0013] In some possible implementations, the first reflector closest to the laser source is a laser collimator.

[0014] In some possible implementations, the mask includes a second substrate, a second reflective layer, and an absorption layer stacked sequentially, wherein the absorption layer is used to absorb the laser beam;

[0015] The hollowed-out area is disposed on the absorbent layer, and the hollowed-out area penetrates the absorbent layer along the direction from the absorbent layer toward the second substrate.

[0016] In some possible implementations, the orthographic projection of each of the cutout regions onto the second reflective layer includes at least two different shapes.

[0017] In some possible implementations, the first reflector includes a stacked third substrate and a third reflective layer;

[0018] Wherein, the surface in contact between the third substrate and the third reflective layer is a concave surface that bends toward the third reflective layer, and the surface of the third reflective layer away from the third substrate is a concave surface that bends away from the third substrate.

[0019] In some possible implementations, the first reflector includes a third substrate, a third emitting layer, and a protective layer stacked sequentially;

[0020] Wherein, the surface in contact between any two adjacent structures of the third substrate, the third emission layer and the protective layer is a concave surface that bends away from the third substrate, and the side surface of the protective layer that is away from the third substrate is a concave surface that bends away from the third substrate.

[0021] In some possible implementations, the second reflector module includes a convex reflector and a concave reflector, with the concave reflector located between the convex reflector and the worktable along the propagation path of the laser beam.

[0022] In some possible implementations, the convex reflector is a Schwarz reflector, and / or the concave reflector is a Schwarz reflector. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of a reflective laser direct writing system in one embodiment of this application;

[0024] Figure 2 This is another structural schematic diagram of the reflective laser direct writing system in the embodiments of this application;

[0025] Figure 3 This is a schematic diagram of a micromirror array in one embodiment of this application;

[0026] Figure 4 for Figure 3 A schematic diagram of a cross-sectional structure of a micro-mirror;

[0027] Figure 5 This is another structural schematic diagram of the reflective laser direct writing system in the embodiments of this application;

[0028] Figure 6 This is another structural schematic diagram of the reflective laser direct writing system in the embodiments of this application;

[0029] Figure 7This is a schematic diagram of another structure of the micro-mirror array in the embodiments of this application;

[0030] Figure 8 for Figure 7 A schematic diagram of a cross-sectional structure of a micro-mirror;

[0031] Figure 9 This is a schematic diagram of a multilayer film structure of the first reflective layer in an embodiment of this application;

[0032] Figure 10 This is a schematic cross-sectional view of a mask plate in an embodiment of this application;

[0033] Figure 11 This is a top view of the mask plate in an embodiment of this application;

[0034] Figure 12 This is a cross-sectional structural diagram of the first reflecting mirror in an embodiment of this application.

[0035] In the picture:

[0036] 100 - Laser source; 200 - First reflector module; 210, 210a, 210b - First reflector; 211 - Third substrate; 212 - Third reflective layer; 213 - Protective layer; 300 - Micro-mirror array; 310 - Substrate; 320 - Micro-mirror; 321 - First substrate; 322 - Compensation layer; 323 - First reflective layer; 3231 - Film A; 3232 - Film B; 400 - Mask; 401 - Hollowed-out area; 410 - Second substrate; 420 - Second reflective layer; 430 - Absorption layer; 500 - Second reflector module; 510 - Convex reflector; 520 - Concave reflector; 600 - Worktable. Detailed Implementation

[0037] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0038] refer to Figure 1 The reflective laser direct writing system in this embodiment may include a laser source 100, a first reflector module 200, a micro-reflector array 300, a mask 400, a second reflector module 500, and a worktable 600. The first reflector module 200 is disposed between the laser source 100 and the mask 400, and the second reflector module 500 is disposed between the mask 400 and the worktable 600.

[0039] Specifically, the laser source 100 is used to emit a laser beam, and the first reflector module 200 includes multiple first reflectors 210, each of which can reflect the laser beam so that the laser beam can propagate along a preset path.

[0040] A micromirror array 300 can be positioned between two adjacent first mirrors 210. After the laser beam reflected by the first mirrors 210 illuminates the micromirror array 300, the micromirror array 300 can form a point light source array. The point light source array is reflected by subsequent first mirrors 210 and then illuminates a mask 400. After being reflected by the mask 400, the point light source array is reflected by the second mirror module 500 to the stage 600. The stage 600 holds the device to be processed, and the surface of the device is coated with photoresist. The point light source array can illuminate the photoresist, thereby performing exposure.

[0041] The device to be processed is, for example, a wafer. The surface of the wafer can be spin-coated with photoresist. When a point light source array shines on the wafer, it can show the specific exposure position, which facilitates subsequent etching for wafer manufacturing.

[0042] The stage 600 is also movable. When it is necessary to adjust the position of the photoresist exposure on the wafer, the stage 600 can be moved to the preset position to adjust the exposure position.

[0043] Additionally, a photomask can be placed on the stage 600, and photoresist can be spin-coated onto the surface of the photomask, allowing the laser beam to expose the photoresist. It is understood that the reflective laser direct writing system in this embodiment can be used not only for wafer fabrication but also for photomask fabrication.

[0044] In this embodiment, reference is also made to Figure 1 and Figure 2 The micromirror array 300 may include a substrate 310 and a plurality of micromirrors 320 disposed on the substrate 310, which may be arranged in an array. As an optional implementation, the plurality of micromirrors 320 may be arranged in a one-to-one correspondence with the cutout areas 401 disposed on the mask 400; that is, the number of micromirrors 320 is equal to the number of cutout areas 401, and the arrangement of the plurality of micromirrors 320 is the same as the arrangement of the cutout areas 401. Thus, when a laser beam passes through the micromirror array 300 and forms a point light source array, when reflected onto the mask 400, each point light source can illuminate its corresponding cutout area 401, thereby accurately determining the position of each exposure and improving the accuracy of subsequent wafer fabrication.

[0045] Of course, in some other embodiments, the number of micromirrors 320 may differ from the number of hollow areas 401. For example, the number of micromirrors 320 may be greater than the number of hollow areas 401. In this case, it is only necessary to ensure that the laser beam reflected by a portion of the multiple micromirrors 320 can illuminate each hollow area 401.

[0046] It is worth mentioning that each micromirror 320 in the micromirror array 300 of this embodiment can be deflected within a certain angle range, so that the laser beam is deflected in a certain direction by the reflection of the micromirror 320. Specifically, when the micromirror 320 is deflected to a certain angle, the micromirror 320 can be regarded as an open state, and the laser reflected by the micromirror 320 can illuminate the cutout area 401 of the mask 400. When the micromirror 320 is deflected to other angles, the micromirror 320 can be regarded as a closed state, and the laser reflected by the micromirror 320 cannot illuminate the cutout area 401 of the mask 400.

[0047] Refer again Figure 1 Along the laser propagation path, the last first reflector 210a can be located below the mask 400, and the first reflector 210a is inclined to the mask 400, with its reflective surface located on the side facing the mask 400. When the laser is reflected to the first reflector 210a, the laser can be reflected into the cutout area 401 of the mask 400. Specifically, when setting the position of the first reflector 210a, it can be set on the left side of the mask 400 (the side away from the micro-mirror array 300). At this time, the first reflector 210b adjacent to the first reflector 210a can have a certain distance between it and the mask 400, and the reflective surface of the first reflector 210b is set opposite to the reflective surface of the first reflector 210a so that the first reflector 210b can reflect the laser onto the first reflector 210a.

[0048] Or, refer to Figure 2 When the position of the first reflector 210a is set, the first reflector 210a can be located on the right side of the mask plate 400 (the side closer to the micro-mirror array 300), and the reflecting surface of the first reflector 210a faces the mask plate 400. At this time, the first reflector 210b can be set close to the mask plate 400, and the first reflector 210b is located above the mask plate 400. The reflecting surface of the first reflector 210b is set opposite to the reflecting surface of the first reflector 210a, so that the first reflector 210b can reflect the laser onto the first reflector 210a.

[0049] Furthermore, the micromirror 320 in this embodiment can be as follows: Figure 3The convex mirror shown or such Figure 7 The concave mirror shown is used to facilitate refractive imaging.

[0050] refer to Figure 4 When the micromirror 320 is a convex mirror, it may include a first substrate 321, a compensation layer 322, and a first reflective layer 323 stacked sequentially. The bottom surface of the first substrate 321 facing away from the compensation layer 322 is flat, so as to facilitate the assembly and fixation of the micromirror 320 to the substrate 310. The contact surfaces between any two adjacent structures of the first substrate 321, the compensation layer 322, and the first reflective layer 323 are all convex. That is, the side of the first substrate 321 facing the compensation layer 322 is convex, the two opposite surfaces of the compensation layer 322 are convex, and the surface of the first reflective layer 323 facing the compensation layer 322 is convex. In addition, the surface of the first reflective layer 323 facing away from the compensation layer 322 is also convex. The bending direction of each of the above convex surfaces is the same. Taking the first reflective layer 323 as an example, the convex surface of the first reflective layer 323 bends toward the first substrate 321, so that the middle part of the first reflective layer 323 is higher than the edge of the first reflective layer 323.

[0051] Please refer to the above. Figures 5 to 8 When the micromirror 320 is a concave mirror, it may include a first substrate 321, a compensation layer 322, and a first reflective layer 323 stacked sequentially. The bottom surface of the first substrate 321 facing away from the compensation layer 322 is planar. The surfaces in contact between any two adjacent structures of the first substrate 321, compensation layer 322, and first reflective layer 323 are all concave. That is, the side of the first substrate 321 facing the compensation layer 322 is concave, the two opposite surfaces of the compensation layer 322 are concave, and the surface of the first reflective layer 323 facing the compensation layer 322 is concave. Additionally, the surface of the first reflective layer 323 facing away from the compensation layer 322 is also concave. The bending direction of each concave surface is the same. Taking the first reflective layer 323 as an example, the concave surface of the first reflective layer 323 bends away from the first substrate 321, causing the middle of the first reflective layer 323 to be lower than its edge.

[0052] In this embodiment, since the first reflective layer 323 is not a planar structure but has a certain degree of curvature, a compensation layer 322 is provided between the first reflective layer 323 and the first substrate 321. The compensation layer 322 can compensate for the stress between the first substrate 321 and the first reflective layer 323. Thus, the compensation layer 322 can ensure that the first reflective layer 323 will not undergo huge deformation due to stress, so as to ensure that the reflectivity of the first reflective layer 323 will not decrease significantly, thereby reducing the loss of laser light when reflected by the micromirror 320.

[0053] The first reflective layer 323 can be a single-layer structure, in which case it can be a single-layer dielectric or metal film layer. Alternatively, the first reflective layer 323 can be a multi-layer film structure to achieve Bragg reflection. (Refer to...) Figure 9 The first reflective layer 323 may include, for example, multiple film layers A3231 and multiple film layers B3232, with film layers A3231 and B3232 arranged alternately to form a multilayer film structure for the first reflective layer 323. The materials of film layers A3231 and B3232 may be different oxide materials to facilitate the reflection of laser beams.

[0054] In some embodiments, reference is also made to Figure 1 and Figure 10 The mask 400 may include a second substrate 410, a second reflective layer 420, and an absorption layer 430 stacked sequentially. A cutout region 401 is disposed in the absorption layer 430, and the cutout region 401 extends through the absorption layer 430 in a direction pointing from the absorption layer 430 to the second substrate 410, thereby exposing the portion of the second reflective layer 420 corresponding to the cutout region 401. When the point light source array of the micromirror array 300 illuminates the mask 400, the point light source array can illuminate the cutout region 401, and is reflected by the second reflective layer 420. When the laser beam illuminates the absorption layer 430, the absorption layer 430 can completely absorb the laser beam, thereby ensuring that the laser beam is not reflected outside the cutout region 401, thus improving the manufacturing accuracy.

[0055] In this embodiment, the material of the absorption layer 430 can be a dielectric material, and the material of the absorption layer 430 can be determined according to the laser wavelength. In specific implementation, the material of the absorption layer 430 can be an alloy material.

[0056] The second reflective layer 420 can be a single-layer dielectric or a metal film. Alternatively, the second reflective layer 420 can be a multilayer film structure. In this case, the specific configuration of the second reflective layer 420 can be similar to that of the first reflective layer 323, which will not be described in detail here.

[0057] Refer again Figure 1 or Figure 5 The second reflector module 500 may include a convex reflector 510 and a concave reflector 520. Along the propagation path of the laser beam, the concave reflector 520 is located between the convex reflector 510 and the stage 600. That is, the laser beam reflected by the second reflective layer 420 of the mask 400 irradiates the convex reflector 510, and after being reflected by the convex reflector 510, it irradiates the concave reflector 520, and finally is reflected by the concave reflector 520 to the stage 600, thereby exposing the photoresist on the wafer surface placed on the stage 600.

[0058] The convex reflector 510 can be a Schwarz reflector, and the concave reflector 520 can also be a Schwarz reflector. In specific implementations, one of the convex reflector 510 and the concave reflector 520 can be designed as a Schwarz reflector, or both can be designed as Schwarz reflectors. Because Schwarz reflectors have extremely high reflectivity and no residual transmittance, when reflecting the laser beam reflected by the mask 400, light loss can be further reduced, thereby facilitating improved manufacturing precision.

[0059] Further, refer to Figure 11 Each hollow area 401 has at least two different shapes in its orthographic projection onto the second reflective layer 420. For example, the orthographic projection shape of the hollow area 401 onto the second reflective layer 420 can be a circle, an ellipse, a square, a polygon, an irregular shape, etc.

[0060] It should be noted that when the manufactured wafer needs to form circular apertures, the laser beam reflected by the mask 400, after being reflected by the convex mirror 510 and the concave mirror 520, will result in a circular projection shape of the cutout area 401. Due to the proximity effect, the laser beam will be distorted during subsequent exposure imaging, leading to a non-circular final exposure pattern. To correct the optical proximity effect and ensure a circular final exposure pattern, the projection shape of the cutout area 401 can be designed by reverse calculation based on the positional relationship between each exposure point and the convex mirror 510 and the concave mirror 520. The projection shape of the cutout area 401 can be designed to be circular or non-circular, thereby ensuring a circular final exposure pattern and improving the precision of wafer manufacturing.

[0061] In specific implementation, the shape of each hollow area 401 can be designed according to the position of the corresponding laser beam irradiating the photoresist on the wafer surface. This embodiment does not limit this.

[0062] Continue to refer to Figure 1 In some embodiments, the first reflector 210 adjacent to the micro-mirror array 300 can be a laser collimator. When the laser beam passes through the laser collimator, the laser collimator can collimate the laser beam, thereby making the laser beam irradiating the micro-mirror array 300 collimated, thereby improving the accuracy of the laser beam during refraction.

[0063] In this embodiment, it is not limited to designing only the first reflector 210 adjacent to the micro-reflector array 300 as a laser collimator. In actual applications, some of the multiple first reflectors 210 can be designed as laser collimators, or all of them can be designed as laser collimators. The specific design can be based on actual needs.

[0064] refer to Figure 12 In this embodiment, the first reflecting mirror 210 can be a concave mirror. In this case, the first reflecting mirror 210 may include a stacked third substrate 211 and a third reflecting layer 212. The bottom surface of the third substrate 211 facing away from the third reflecting layer 212 is flat, and the surface of the third substrate 211 facing the third reflecting layer 212 is concave. Both opposite sides of the third reflecting layer 212 are concave. The bending direction of the above concave surfaces is the same. Taking the third reflecting layer 212 as an example, the third reflecting layer 212 is bent away from the third substrate 211, so that the middle part of the third reflecting layer 212 is lower than the edge of the third reflecting layer 212.

[0065] It is worth noting that in this embodiment, when describing the middle part of the third reflective layer 212 as being lower than the edge of the third reflective layer 212, the description is based on the state when the third substrate 211 is placed flat with the bottom as the base.

[0066] Alternatively, continue to refer to Figure 12 The first reflector 210 may include a third substrate 211, a third reflective layer 212, and a protective layer 213 stacked sequentially. The bottom surface of the third substrate 211 facing away from the third reflective layer 212 is planar. The surfaces in contact between any two adjacent structures of the third substrate 211, the third reflective layer 212, and the protective layer 213 are all concave. That is, the surface of the third substrate 211 facing the third reflective layer 212 is concave, the two opposite surfaces of the third reflective layer 212 are concave, and the surface of the protective layer 213 facing the third reflective layer 212 is concave. Additionally, the surface of the protective layer 213 facing away from the third reflective layer 212 is also concave.

[0067] The protective layer 213 can be made of, for example, an oxide material. By providing the protective layer 213 on the surface of the third reflective layer 212, the third reflective layer 212 can be protected from contamination or corrosion by other components in the system, thereby ensuring that the reflectivity of the third reflective layer 212 is not affected. Of course, when there is no source of contamination or corrosion in the system, the protective layer 213 may not be provided.

[0068] In this embodiment, the third reflective layer 212 can be a single-layer dielectric or a metal film. Alternatively, the second reflective layer 420 can be a multilayer film structure. In this case, the specific configuration of the third reflective layer 212 can be similar to that of the first reflective layer 323, which will not be described in detail here.

[0069] Furthermore, the number of first reflectors 210 in the first reflector module 200 is unlimited, and this number can be practically designed according to the actual application scenario. It is worth noting that, to a certain extent, the fewer the number of first reflectors 210, the lower the loss of the laser beam during propagation. Therefore, the number of first reflectors 210 can be minimized while still meeting the requirements for laser beam reflection.

[0070] Obviously, those skilled in the art can make various modifications and variations to the embodiments of the present invention without departing from the spirit and scope of the invention. Therefore, if these modifications and variations fall within the scope of the claims of the present invention and their equivalents, the present invention also intends to include these modifications and variations.

Claims

1. A reflective laser direct writing system, characterized in that, It includes a laser source, a first reflector module, a second reflector module, a micro-reflector array, a mask, and a worktable; The first reflector module is disposed between the laser source and the mask plate. The first reflector module includes a plurality of first reflectors, which are respectively used to reflect the laser beam emitted by the laser source. The micromirror array is disposed between two of the first mirrors, and the micromirror array is used to form the laser beam into a point source array. The mask plate has multiple hollow areas, and the first reflector module and the micro reflector array are used to work together to reflect the point light source array to each of the hollow areas. The second reflector module is disposed between the mask and the worktable. The worktable is used to place the device to be processed. The surface of the device is coated with photoresist. The second reflector module is used to reflect the point light source array reflected by the mask onto the photoresist of the device.

2. The reflective laser direct writing system according to claim 1, characterized in that, The micromirror array includes multiple micromirrors, which are either convex or concave mirrors.

3. The reflective laser direct writing system according to claim 2, characterized in that, When the reflector is a convex mirror, the micro-reflector includes a first substrate, a compensation layer and a first reflective layer stacked in sequence. The contact surface between any two adjacent structures of the first substrate, the compensation layer and the first reflective layer is a convex surface that is bent toward the first substrate, and the side surface of the first reflective layer away from the compensation layer is a convex surface that is bent toward the first substrate.

4. The reflective laser direct writing system according to claim 2, characterized in that, When the reflector is a concave mirror, the micro-reflector includes a first substrate, a compensation layer and a first reflective layer stacked in sequence. The surface in contact between any two adjacent structures of the first substrate, the compensation layer and the first reflective layer is a concave surface that is bent away from the first substrate, and the side surface of the first reflective layer away from the compensation layer is a concave surface that is bent away from the first substrate.

5. The reflective laser direct writing system according to claim 1, characterized in that, The first reflector adjacent to the micro-mirror array is a laser collimator, which is used to collimate the laser beam into collimated light and irradiate the micro-mirror array.

6. The reflective laser direct writing system according to claim 1, characterized in that, The mask includes a second substrate, a second reflective layer, and an absorption layer stacked sequentially, wherein the absorption layer is used to absorb the laser beam; The hollowed-out area is disposed on the absorbent layer, and the hollowed-out area penetrates the absorbent layer along the direction from the absorbent layer toward the second substrate.

7. The reflective laser direct writing system according to claim 6, characterized in that, The orthographic projection of each of the hollowed-out areas onto the second reflective layer includes at least two different shapes.

8. The reflective laser direct writing system according to claim 1, characterized in that, The first reflector includes a third substrate and a third reflective layer stacked together; Wherein, the surface in contact between the third substrate and the third reflective layer is a concave surface that bends toward the third reflective layer, and the surface of the third reflective layer away from the third substrate is a concave surface that bends away from the third substrate.

9. The reflective laser direct writing system according to claim 1, characterized in that, The first reflector includes a third substrate, a third emitting layer, and a protective layer stacked sequentially; Wherein, the surface in contact between any two adjacent structures of the third substrate, the third emission layer and the protective layer is a concave surface that bends away from the third substrate, and the side surface of the protective layer that is away from the third substrate is a concave surface that bends away from the third substrate.

10. The reflective laser direct writing system according to claim 1, characterized in that, The second reflector module includes a convex reflector and a concave reflector, with the concave reflector located between the convex reflector and the worktable along the propagation path of the laser beam.

11. The reflective laser direct writing system according to claim 10, characterized in that, The convex reflector is a Schwarz reflector, and / or the concave reflector is a Schwarz reflector.

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