Carbon ceramic resistor high-energy pulse physical field simulation method, system, device and medium

Abstract

The application relates to the technical field of electronic component simulation, and discloses a carbon ceramic resistor high-energy pulse physical field simulation method, system, equipment and medium. The method comprises the following steps: an equivalent cross-section model of a carbon ceramic resistor is established, a resistor main body region is divided into multiple microstructure blocks according to microstructure distribution, material parameter calibration is carried out on each microstructure block in combination with actually measured electrical performance information, thermal-electric-force coupling simulation is carried out through time-varying impact voltage input, a failure risk block is determined through a current density field, a temperature field and a stress field, and material parameters are corrected to form a degradation partition model when the failure risk block meets ablation degradation criteria, the degradation partition model is subjected to secondary impact simulation, and differences between initial impact and secondary impact results are compared, and a high-energy pulse response evaluation result of the carbon ceramic resistor sample is output, so that more accurate simulation basis is provided for impact resistance performance evaluation, structure optimization and failure mechanism analysis of the carbon ceramic resistor.

Description

Technical Field

[0001] This invention relates to the field of electronic component simulation technology, and in particular to a method, system, device and medium for simulating the physical field of a high-energy pulse on a carbon ceramic resistor. Background Technology

[0002] Carbon ceramic resistors are a type of composite resistive material composed of a carbon-phase conductive network and a ceramic matrix. They typically possess good high-temperature resistance, impact resistance, and energy absorption capabilities, making them suitable for applications such as high-energy pulse absorption, surge suppression, pulsed power devices, impulse current discharge, and high-voltage electrical protection. In these applications, carbon ceramic resistors often need to withstand high-amplitude impulse voltages or currents for extremely short periods. When high-energy pulse energy is injected into a carbon ceramic resistor, a series of coupled physical processes occur within the resistor, including current distribution, potential distribution, Joule heating, heat conduction, thermal radiation, thermal expansion, localized stress concentration, and material ablation and degradation.

[0003] The conductivity of carbon ceramic resistors is not perfectly uniform. Due to the uneven distribution of carbon elements within the material, regions with higher carbon phase content typically exhibit higher conductivity, while regions with lower carbon phase content have relatively lower conductivity. Therefore, under the same applied voltage, different micro-regions within the carbon ceramic resistor will form different current density distributions. Regions with higher current density will generate more Joule heating, causing local temperature increases and potentially forming local hot spots. These local hot spots further induce thermal expansion, changes in contact state, and local stress concentration, thereby affecting the stability of the conductive path. If energy injection continues to increase or repeated impacts occur, local areas may experience ablation, melting, carbon chain breakage, ceramic matrix crack propagation, or interface failure, ultimately leading to a decrease in resistive performance or even breakdown failure.

[0004] Therefore, evaluating the impact resistance of carbon ceramic resistors solely based on macroscopic resistance, macroscopic temperature rise, or overall average conductivity is insufficient. While existing analytical methods for carbon ceramic resistors or similar composite resistive materials can simulate their impact response to some extent, they still struggle to achieve highly accurate simulations, leading to inaccurate resistance performance assessments. Summary of the Invention

[0005] In view of this, in order to solve the above-mentioned technical problems, the present invention provides a method, system, device and medium for simulating the physical field of high-energy pulses in carbon ceramic resistors.

[0006] The first aspect of this invention provides a method for simulating the physical field of a high-energy pulse on a carbon ceramic resistor, the method comprising:

[0007] Obtain the structural parameters, microstructure distribution information, measured electrical performance information, and impact test conditions of the carbon ceramic resistor sample to be simulated;

[0008] Based on the structural parameters, an equivalent cross-sectional model corresponding to the carbon ceramic resistor sample is established, and based on the microstructure distribution information, the main resistor region in the equivalent cross-sectional model is divided into multiple microstructure blocks;

[0009] Based on the microstructure distribution information and measured electrical performance information corresponding to each microstructure block, the material parameters of each microstructure block are calibrated to obtain a partitioned simulation model with heterogeneous conductivity distribution.

[0010] Based on the impact test conditions, a time-varying impact voltage input is established, and the impact voltage input is applied to the high potential boundary of the partitioned simulation model. The thermo-electric-mechanical coupling simulation analysis is performed on the partitioned simulation model to obtain the current density field, temperature field and stress field corresponding to each microstructure block under the initial impact.

[0011] Based on the current density field, the temperature field, and the stress field, the failure risk blocks in the carbon ceramic resistor sample are determined, and when the failure risk blocks meet the preset ablation degradation criteria, the material parameters of the failure risk blocks are corrected to obtain a degradation partitioning model.

[0012] The deteriorated partition model is subjected to a second impact simulation, and the high-energy pulse response evaluation results of the carbon ceramic resistor sample are output based on the difference between the initial impact simulation results and the second impact simulation results.

[0013] In one example, the equivalent cross-sectional model corresponding to the carbon ceramic resistor sample is established based on the structural parameters, and the main resistor region in the equivalent cross-sectional model is divided into multiple microstructure blocks based on the microstructure distribution information, including:

[0014] The geometry of the carbon ceramic resistor sample is determined based on its inner diameter, outer diameter, and thickness.

[0015] When the carbon ceramic resistor sample is a coaxial cylindrical structure, and the impact current flows through the carbon ceramic resistor sample along the thickness direction, a local vertical section of the carbon ceramic resistor sample along the thickness direction is selected as the equivalent object, and the local vertical section is converted into a two-dimensional calculation region.

[0016] In the two-dimensional calculation region, a resistor body region representing the carbon ceramic resistor body is determined, and clamping regions are respectively set on opposite sides of the resistor body region along the thickness direction to obtain the equivalent cross-sectional model; wherein, the equivalent cross-sectional model is used to characterize the impact current transmission path of the carbon ceramic resistor sample in the thickness direction in the form of a two-dimensional cross-section, and the clamping regions are used to simulate the clamping and voltage loading effect of the electrode clamps on the carbon ceramic resistor sample in the impact test;

[0017] Based on the differences in carbon content distribution of the carbon ceramic resistor samples, the main body region of the resistor is divided into blocks to obtain multiple local regions with different carbon content characteristics, and each local region is converted into a polygonal microstructure block.

[0018] In one example, the step of calibrating the material parameters of each microstructure block based on the microstructure distribution information and the measured electrical performance information to obtain a partitioned simulation model with a heterogeneous conductivity distribution includes:

[0019] Based on the relationship between the carbon content of each microstructure block, the electrical conductivity levels of each microstructure block are sorted.

[0020] Based on the rated resistance range of the carbon ceramic resistor sample, determine the overall conductivity calibration range of the carbon ceramic resistor sample;

[0021] Under the constraint of the overall conductivity calibration range, material parameters are configured for microstructure blocks with different conductivity levels, so that the conductivity of microstructure blocks with higher carbon content is higher than that of microstructure blocks with lower carbon content, thus obtaining a partitioned simulation model with heterogeneous conductivity distribution.

[0022] In one example, the impact voltage input, which varies with time according to the impact test conditions, is established and applied to the high-potential boundary of the partitioned simulation model. A thermo-electric-mechanical coupling simulation analysis is then performed on the partitioned simulation model to obtain the current density field, temperature field, and stress field corresponding to each microstructure block under the initial impact, including:

[0023] Based on the equivalent resistance, equivalent inductance, and energy storage capacitor in the impact test conditions, a transient response model of an RLC series second-order circuit is established.

[0024] Based on the transient response model of the RLC series second-order circuit, the impulse voltage waveform across the carbon ceramic resistor sample is fitted to obtain the impulse voltage function that varies with time, and the impulse voltage function is used as the impulse voltage input.

[0025] The impulse voltage input is applied to the fixture region of the partitioned simulation model, and the low-potential fixture region is set as the ground boundary;

[0026] Based on the potential difference formed between the potentials at both ends of the fixture region, the potential distribution and current density field are solved in the partitioned simulation model.

[0027] The amount of Joule heat generated in each of the microstructure blocks is calculated based on the current density field.

[0028] Based on the Joule heat generation and the thermal properties of each microstructure block, the temperature field in the partitioned simulation model is solved;

[0029] The thermal expansion response of each microstructure block is calculated based on the temperature field, and the stress field in the partitioned simulation model is solved based on the thermal expansion response.

[0030] In one example, determining the failure risk blocks in the carbon ceramic resistor sample based on the current density field, the temperature field, and the stress field includes:

[0031] Using each of the microstructure blocks as an evaluation unit, the peak current density, average current density, and high current density continuous path distribution information corresponding to each of the microstructure blocks are extracted from the current density field.

[0032] Based on the current density peak value, the current density average value, and the high current density continuous path distribution information, current density concentration blocks are determined, and Joule heat accumulation blocks are determined based on the resistivity corresponding to the current density concentration blocks.

[0033] The local maximum temperature, temperature rise rate, temperature gradient, and hot spot duration corresponding to each microstructure block are extracted from the temperature field, and local hot spot blocks are determined in the Joule heat accumulation block based on the local maximum temperature, the temperature rise rate, the temperature gradient, and the hot spot duration.

[0034] The thermal expansion response of each microstructure block is determined based on the temperature field, and the equivalent stress, maximum principal stress and stress concentration location corresponding to each microstructure block are extracted by combining the stress field, thereby determining the stress concentration block caused by the thermal expansion response of the local hot spot block.

[0035] When the same microstructure block belongs to both the local hot spot block and the stress concentration block, or when the local hot spot block and the stress concentration block have a spatial relationship at adjacent contact interfaces, the microstructure block is identified as the failure risk block.

[0036] In one example, when the failure risk block meets a preset ablation degradation criterion, the material parameters of the failure risk block are modified to obtain a degradation partitioning model, including:

[0037] The failure risk blocks that meet the above ablation degradation criteria are identified as ablation degradation blocks;

[0038] The electrical conductivity of the ablation and degradation block is reduced, and at least one of the thermal conductivity, specific heat capacity, density, coefficient of thermal expansion, elastic modulus and contact resistance of the ablation and degradation block is corrected to characterize the changes in the conductive network, thermal conductivity or mechanical properties after local ablation and degradation.

[0039] The corrected material parameters are written back into the partition simulation model to obtain the deteriorated partition model.

[0040] In one example, the process of performing a second impact simulation on the deteriorated partition model and outputting the high-energy pulse response evaluation result of the carbon ceramic resistor sample based on the difference between the initial impact simulation result and the second impact simulation result includes:

[0041] Under the same impact voltage condition as the initial impact, the degradation partition model is re-applied with the impact voltage input, and a thermo-electric-mechanical coupling simulation analysis is performed to obtain the current density field, temperature field and stress field under the second impact.

[0042] The current density field, temperature field, and stress field under the second impact were compared with those under the first impact to determine the changes in current density distribution, temperature distribution, local hot spots, and stress concentration of the carbon ceramic resistor sample before and after ablation and degradation.

[0043] Based on the changes in current density distribution, temperature distribution, local hot spots, and stress concentration, the changes in the conductivity path, Joule heat accumulation, temperature uniformity, and material failure risk of the carbon ceramic resistor sample are output as the evaluation results of the high-energy pulse response.

[0044] Secondly, the present invention also provides a high-energy pulse physical field simulation system for carbon ceramic resistors, the system comprising:

[0045] The data acquisition module is used to acquire the structural parameters, microstructure distribution information, measured electrical performance information, and impact test conditions of the carbon ceramic resistor sample to be simulated.

[0046] The block division module is used to establish an equivalent cross-sectional model corresponding to the carbon ceramic resistor sample based on the structural parameters, and to divide the main resistor region in the equivalent cross-sectional model into multiple microstructure blocks based on the microstructure distribution information.

[0047] The partitioned simulation module is used to calibrate the material parameters of each microstructure block according to the microstructure distribution information and the measured electrical performance information, so as to obtain a partitioned simulation model with a heterogeneous conductivity distribution.

[0048] The multiphysics simulation module is used to establish a time-varying impact voltage input based on the impact test conditions, apply the impact voltage input to the high potential boundary of the partitioned simulation model, and perform thermo-electric-mechanical coupling simulation analysis on the partitioned simulation model to obtain the current density field, temperature field and stress field corresponding to each microstructure block under the initial impact.

[0049] The degradation partitioning determination module is used to determine the failure risk blocks in the carbon ceramic resistor sample based on the current density field, the temperature field and the stress field, and to correct the material parameters of the failure risk blocks when the failure risk blocks meet the preset ablation degradation criteria, so as to obtain the degradation partitioning model.

[0050] The response evaluation module is used to perform a second impact simulation on the deteriorated partition model, and output the high-energy pulse response evaluation result of the carbon ceramic resistor sample based on the difference between the initial impact simulation result and the second impact simulation result.

[0051] Thirdly, the present invention also provides an electronic device, the electronic device including a memory and a processor, the memory storing a computer program, the computer program being executed by the processor causing the processor to perform the steps of the carbon ceramic resistor high-energy pulse physical field simulation method as described in the first aspect.

[0052] Fourthly, the present invention also provides a computer-readable storage medium having a computer program stored thereon, which, when executed, implements the steps of the carbon ceramic resistor high-energy pulse physical field simulation method as described in the first aspect.

[0053] As can be seen from the above technical solutions, this invention, after obtaining the structural parameters, microstructure distribution information, measured electrical performance information, and impact test conditions of the carbon ceramic resistor sample, first establishes an equivalent cross-sectional model corresponding to the sample's geometry and current transmission direction. Then, according to the microstructure distribution, the main resistor region is divided into multiple microstructure blocks, allowing the local conductivity differences caused by uneven carbon element distribution to be expressed in the simulation model. Next, combined with the measured electrical performance information, material parameters are calibrated for each microstructure block, resulting in a partitioned simulation model with a heterogeneous conductivity distribution. This ensures that the model both conforms to the overall electrical performance of the sample and reflects the conductivity differences in different micro-regions. Based on this, through... Thermo-electro-mechanical coupling simulation using time-varying impact voltage input continuously obtains the current density field, temperature field, and stress field under the initial impact, allowing analysis of the correlation between current concentration, Joule heat accumulation, local temperature rise, and thermal stress concentration. Furthermore, failure risk blocks are identified using the current density field, temperature field, and stress field. When these blocks meet the ablation degradation criteria, material parameters are modified to form a degradation zoning model, enabling the simulation to represent the state after local ablation, conductive network damage, or changes in material properties. Finally, the degradation zoning model undergoes a second impact simulation, and the differences between the initial and second impact results are compared, thus outputting the high-energy pulse response evaluation results of the carbon ceramic resistor sample. Therefore, this scheme improves the precision of high-energy pulse response simulation of carbon ceramic resistors, locates microstructural regions prone to hot spots, stress concentration, and ablation degradation, and evaluates changes in current distribution, temperature distribution, and failure risk before and after degradation, providing more accurate simulation basis for impact resistance assessment, structural optimization, and failure mechanism analysis of carbon ceramic resistors. Attached Figure Description

[0054] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0055] Figure 1 This is an application environment diagram of a high-energy pulse physical field simulation method for carbon ceramic resistors provided in an embodiment of the present invention;

[0056] Figure 2 A flowchart illustrating a high-energy pulse physical field simulation method for carbon ceramic resistors provided in this embodiment of the invention;

[0057] Figure 3 This is a schematic diagram of block division based on carbon element distribution in a modeling process.

[0058] Figure 4This is a schematic diagram showing the order of electrical conductivity from highest to lowest.

[0059] Figure 5 This is a schematic diagram of the voltage surge simulation waveform;

[0060] Figure 6 This is a current density distribution diagram;

[0061] Figure 7a For a moment Schematic diagram of temperature field distribution;

[0062] Figure 7b For time 2 Schematic diagram of temperature field distribution;

[0063] Figure 7c For time 3 Schematic diagram of temperature field distribution;

[0064] Figure 7d For a moment Schematic diagram of temperature field distribution;

[0065] Figure 8 This is a three-dimensional schematic diagram of the temperature distribution;

[0066] Figure 9 This is a simulation diagram of the stress field distribution inside the resistor;

[0067] Figure 10 This is a simulation diagram of the current density distribution inside the resistor after localized ablation and degradation.

[0068] Figure 11 Three-dimensional images of temperature distribution at different times after localized ablation and degradation;

[0069] Figure 12 A schematic diagram of the structure of a high-energy pulsed physical field simulation system for carbon ceramic resistors provided in an embodiment of the present invention;

[0070] Figure 13 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0071] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0072] The carbon ceramic resistor high-energy pulse physical field simulation method provided in this application embodiment can be applied to, for example... Figure 1 In the application environment shown, terminal 101 communicates with server 102 via a network. A data storage system can store the data that server 102 needs to process. The data storage system can be integrated onto server 102 or placed on a cloud or other network server. Terminal 101 or server 102 executes a high-energy pulse physical field simulation method for carbon ceramic resistors. This method includes: acquiring the structural parameters, microstructure distribution information, measured electrical performance information, and impact test conditions of the carbon ceramic resistor sample to be simulated; establishing an equivalent cross-sectional model corresponding to the carbon ceramic resistor sample based on the structural parameters, and dividing the main resistor region in the equivalent cross-sectional model into multiple microstructure blocks based on the microstructure distribution information; calibrating the material parameters of each microstructure block according to the microstructure distribution information and measured electrical performance information corresponding to each microstructure block to obtain a partitioned simulation model with a heterogeneous conductivity distribution; and establishing a time-varying impact electrical field simulation model based on the impact test conditions. An impact voltage input is applied to the high-potential boundary of the partitioned simulation model, and a thermo-electric-mechanical coupling simulation analysis is performed on the partitioned simulation model to obtain the current density field, temperature field, and stress field corresponding to each microstructure block under the initial impact. Based on the current density field, temperature field, and stress field, the failure risk blocks in the carbon ceramic resistor sample are determined. When the failure risk blocks meet the preset ablation degradation criteria, the material parameters of the failure risk blocks are corrected to obtain the degradation partitioned model. The degradation partitioned model is subjected to a second impact simulation, and the high-energy pulse response evaluation results of the carbon ceramic resistor sample are output based on the difference between the initial impact simulation results and the second impact simulation results.

[0073] Terminal 101 can be, but is not limited to, various personal computers, laptops, smartphones, and tablets.

[0074] Server 102 can be a standalone physical server, a server cluster or distributed system consisting of multiple physical servers, or a cloud server that provides cloud computing services.

[0075] like Figure 2 As shown in the embodiments of this application, a method for simulating the physical field of a high-energy pulse on a carbon ceramic resistor is provided, which is then applied to... Figure 1 Taking terminal 101 or server 102 as an example, the explanation includes the following steps S1 to S6. Wherein:

[0076] Step S1: Obtain the structural parameters, microstructure distribution information, measured electrical performance information, and impact test conditions of the carbon ceramic resistor sample to be simulated.

[0077] In this step, structural parameters are used to establish the geometric basis of the carbon ceramic resistor sample, and may include at least the sample inner diameter d, sample outer diameter D, sample thickness L, sample shape, sample clamping method, and impact current direction. Microstructure distribution information is used to characterize the differences in carbon phase distribution within the carbon ceramic resistor, and may include at least a carbon element distribution map, local carbon content distribution, material composition information, and the regional distribution relationship between the carbon phase and the ceramic matrix. Measured electrical performance information is used to match the macroscopic electrical performance of the simulation model with the real sample, and may include at least the actual resistance value R or the actual resistance range of the sample. Impact test conditions are used to establish the simulation input conditions, and may include at least the impact voltage amplitude, impact current direction, equivalent resistance, equivalent inductance, energy storage capacitance, ambient temperature, and heat transfer conditions.

[0078] In one example, the carbon ceramic resistor sample to be simulated is a coaxial cylindrical structure with an inner diameter d of 20 mm, an outer diameter D of 50 mm, and a thickness L of 25 mm. During the experiment, the current flows through the sample along the thickness direction. The actual resistance of the sample can fluctuate between 5.9 Ω and 6.5 Ω. This actual resistance range can be used for subsequent overall conductivity calibration, so that the partitioned simulation model can reflect the local microstructure differences without deviating from the macroscopic measured electrical performance of the sample.

[0079] Carbon distribution maps can be obtained through material cross-sectional characterization, elemental distribution testing, or other methods that reflect the spatial distribution of carbon content. The color intensity, grayscale values, or elemental content values ​​in the carbon distribution map can be used to determine the relative carbon content in different regions. Generally, regions with higher carbon content correspond to higher electrical conductivity, and regions with lower carbon content correspond to lower electrical conductivity.

[0080] Step S2: Establish the equivalent cross-sectional model corresponding to the carbon ceramic resistor sample based on the structural parameters, and divide the main resistor region in the equivalent cross-sectional model into multiple microstructure blocks based on the microstructure distribution information.

[0081] In this step, the equivalent cross-sectional model refers to converting the local cross-sections related to the impact current transmission in the three-dimensional sample structure into a two-dimensional cross-sectional model that can be used for finite element solution, based on the main current transmission direction of the carbon ceramic resistor sample.

[0082] Taking a coaxial cylindrical carbon ceramic resistor sample as an example, since the impact current mainly flows along the thickness direction of the sample, a local vertical section along the thickness direction can be selected as the equivalent object, and this local vertical section can be converted into a two-dimensional computational region. This two-dimensional computational region can retain the potential difference, current path, temperature diffusion, and thermal expansion response along the thickness direction, while reducing the computational load of the three-dimensional model.

[0083] After establishing the equivalent cross-sectional model, instead of directly setting the main resistive region as a homogeneous material region, the main resistive region is divided into blocks based on the carbon element distribution map. This allows the complex carbon phase distribution inside the real material to be transformed into a finite element partition model that can be calculated, assigned values, and solved.

[0084] The computational complexity is reduced by using an equivalent cross-section model, and the local conductivity differences caused by uneven carbon phase distribution are preserved by dividing the microstructure into blocks. This enables subsequent simulations to identify high current density paths, low conductivity obstruction regions, current flow around regions, and the starting points of local hot spots that are difficult to find in homogeneous models.

[0085] Step S3: Based on the microstructure distribution information and measured electrical performance information corresponding to each microstructure block, the material parameters of each microstructure block are calibrated to obtain a partitioned simulation model with heterogeneous conductivity distribution.

[0086] In this step, material parameter calibration refers to configuring different material parameters for different microstructure blocks based on the differences in carbon content reflected in the carbon element distribution map and the actual resistance range of the samples. Since carbon phase content is closely related to conductivity, the conductivity levels of each microstructure block can be sorted according to the relative carbon content. Microstructure blocks with higher carbon content correspond to higher conductivity levels, and microstructure blocks with lower carbon content correspond to lower conductivity levels. Unmarked areas or areas with the lowest carbon content can be used as the lowest conductivity level.

[0087] In one implementation, multiple material grades can be set, for example, eight material groups with different material parameters. Each material group corresponds to a conductivity grade, and parameters such as conductivity, thermal conductivity, specific heat capacity, density, coefficient of thermal expansion, elastic modulus, and Poisson's ratio are configured for each. The clamping area can be made of copper to reflect the high conductivity and good thermal conductivity of copper electrode clamps. Each microstructure block in the resistor body area is matched to a corresponding material group according to its carbon content grade.

[0088] Step S4: Establish the impact voltage input that varies with time according to the impact test conditions, apply the impact voltage input to the high potential boundary of the partitioned simulation model, and perform thermo-electric-mechanical coupling simulation analysis on the partitioned simulation model to obtain the current density field, temperature field and stress field corresponding to each microstructure block under the initial impact.

[0089] In this step, the impulse voltage input is used to simulate the transient voltage applied across the carbon ceramic resistor sample during a high-energy pulse test. The impulse voltage waveform can be fitted according to the transient response model of an RLC series second-order circuit. The RLC series second-order circuit includes an equivalent resistance R, an equivalent inductance L, and an energy storage capacitor C. The equivalent resistance R can include the resistance of the carbon ceramic resistor sample and the additional equivalent resistance in the test circuit, the equivalent inductance L can be the equivalent inductance of the test circuit, and the energy storage capacitor C can be the energy storage capacitor in the test circuit.

[0090] During the simulation loading process, an impulse voltage is applied to the high-potential clamp region of the partitioned simulation model, while the low-potential clamp region is set as the ground boundary. This creates a potential difference along the thickness direction between the high-potential and low-potential clamp regions. The impulse current enters the main resistive region through the high-potential clamp region and then flows out through the low-potential clamp region, thus simulating the current loading path in an actual test.

[0091] By continuously coupling the impulse voltage input, current density solution, Joule heat calculation, temperature field solution, and thermal expansion stress analysis, the simulation process can reflect the continuous physical process of non-uniform current density distribution—Joule heat accumulation—temperature rise—thermal expansion—stress concentration, rather than just giving a single temperature rise result or a single current distribution result.

[0092] Step S5: Based on the current density field, temperature field, and stress field, determine the failure risk blocks in the carbon ceramic resistor sample, and when the failure risk blocks meet the preset ablation degradation criteria, modify the material parameters of the failure risk blocks to obtain the degradation partitioning model.

[0093] In this context, the failure risk block refers to a microstructure block that, during the initial high-energy pulse impact, has a high risk of ablation, crack propagation, interface failure, or damage to the conductive network due to concentrated current density, Joule heat accumulation, localized temperature rise, thermal expansion, and stress concentration. To avoid treating failure risk blocks as isolated evaluation objects, this embodiment uses each microstructure block as an evaluation unit and identifies them according to the physical progression relationship between the current density field, temperature field, and stress field.

[0094] After identifying the failure risk block, it is further determined whether it meets the preset ablation degradation criteria. The ablation degradation criteria may include one or more of the following: local maximum temperature exceeds a preset temperature threshold; local temperature rise rate exceeds a preset temperature rise rate threshold; local equivalent stress exceeds a material strength threshold; local energy density exceeds a material energy tolerance threshold; local current density continuously exceeds a preset current density threshold; local hot spot duration exceeds a preset time threshold; local temperature gradient exceeds a preset temperature gradient threshold. When a failure risk block meets any one or a combination of the above conditions, it is identified as an ablation degradation block.

[0095] Ablation degradation is used to describe the state of irreversible damage that occurs in a localized area after a high-energy pulse impact. This state can correspond to phenomena such as the breakage of the carbon phase conductive network, local carbon chain disruption, crack propagation in the ceramic matrix, local melting, interface debonding, increased porosity, altered contact conditions, or localized structural damage to the material. Because these irreversible damages alter the electrical conductivity, thermal conductivity, and mechanical properties of the affected area, it is necessary to correct the material parameters of that region.

[0096] Step S6: Perform a second impact simulation on the deteriorated partition model, and output the high-energy pulse response evaluation results of the carbon ceramic resistor sample based on the difference between the initial impact simulation results and the second impact simulation results.

[0097] In this step, the re-impact simulation is used to model the response changes of carbon ceramic resistor samples under the same or new impact conditions after experiencing an initial high-energy pulse and subsequent localized ablation degradation. The input voltage for the re-impact simulation can be the same as the initial impact, or it can be set to a higher voltage or a different energy level according to the requirements of continuous impact testing. During the re-impact process, the degradation zone model is also solved using thermo-electric-mechanical coupling to obtain the current density field, temperature field, and stress field under the re-impact.

[0098] After completing the second impact simulation, the results of the second impact simulation are compared with the results of the first impact simulation. The comparison can include the maximum and minimum current density, the uniformity of current density distribution, the highest temperature, the lowest temperature, the temperature difference between the highest and lowest temperatures, the location of local hot spots, the duration of local hot spots, the location of stress concentration, and the location of ablation and deterioration blocks.

[0099] The high-energy pulse response evaluation results can include current density distribution map, temperature field distribution map, curve of maximum temperature change over time, curve of minimum temperature change over time, difference between maximum and minimum temperature, location of local hot spot area, duration of local hot spot, stress field distribution map, location of maximum equivalent stress, location of ablation and degradation area, difference in current density before and after degradation, difference in maximum temperature before and after degradation, change in temperature uniformity before and after degradation, trend of energy change required for re-impact, and material failure risk evaluation results.

[0100] It should be noted that, in this embodiment, after obtaining the structural parameters, microstructure distribution information, measured electrical performance information, and impact test conditions of the carbon ceramic resistor sample, an equivalent cross-sectional model corresponding to the sample's geometry and current transmission direction is first established. The main body of the resistor is then divided into multiple microstructure blocks according to the microstructure distribution, allowing the local conductivity differences caused by uneven carbon element distribution to be expressed in the simulation model. Next, the material parameters of each microstructure block are calibrated using the measured electrical performance information, resulting in a partitioned simulation model with a heterogeneous conductivity distribution. This ensures that the model both conforms to the overall electrical performance of the sample and reflects the conductivity differences in different micro-regions. Based on this, by... A time-varying impact voltage input is used for thermo-electric-mechanical coupling simulation, which continuously obtains the current density field, temperature field, and stress field under the initial impact. This allows for the analysis of the correlation between current concentration, Joule heat accumulation, local temperature rise, and thermal stress concentration. Furthermore, failure risk blocks are identified using the current density field, temperature field, and stress field. When these blocks meet the ablation degradation criteria, material parameters are modified to form a degradation zoning model, enabling the simulation to represent the state after local ablation, conductive network damage, or changes in material properties. Finally, the degradation zoning model is subjected to a second impact simulation, and the differences between the initial and second impact results are compared, thus outputting the high-energy pulse response evaluation results of the carbon ceramic resistor sample. Therefore, this scheme can improve the precision of high-energy pulse response simulation of carbon ceramic resistors, locate microstructural regions prone to hot spots, stress concentration, and ablation degradation, and evaluate changes in current distribution, temperature distribution, and failure risk before and after degradation. This provides a more accurate simulation basis for the impact resistance assessment, structural optimization, and failure mechanism analysis of carbon ceramic resistors.

[0101] In some embodiments, an equivalent cross-sectional model corresponding to the carbon ceramic resistor sample is established based on structural parameters, and the resistor body region in the equivalent cross-sectional model is divided into multiple microstructure blocks based on microstructure distribution information. This includes: determining the geometric shape of the carbon ceramic resistor sample based on its inner diameter, outer diameter, and thickness; when the carbon ceramic resistor sample is a coaxial cylindrical structure and the impact current flows through the carbon ceramic resistor sample along its thickness direction, a local vertical cross-section of the carbon ceramic resistor sample along its thickness direction is selected as the equivalent object, and the local vertical cross-section is converted into a two-dimensional calculation region; and within the two-dimensional calculation region, a... The resistor body region is used to represent the main body of the carbon ceramic resistor. Fixture regions are set on opposite sides of the resistor body region along the thickness direction to obtain an equivalent cross-sectional model. The equivalent cross-sectional model is used to characterize the impact current transmission path of the carbon ceramic resistor sample in the thickness direction in a two-dimensional cross-sectional form. The fixture regions are used to simulate the clamping and voltage loading effect of the electrode fixtures on the carbon ceramic resistor sample in the impact test. According to the difference in carbon content distribution of the carbon ceramic resistor sample, the resistor body region is divided into blocks to obtain multiple local regions with different carbon content characteristics. Each local region is then converted into a polygonal microstructure block.

[0102] Since the carbon ceramic resistor sample has a coaxial cylindrical structure, the current mainly flows through the sample along the thickness direction during the experiment. Therefore, it can be equivalent to a two-dimensional model with a vertical cross-section. Taking the example, the sample has an inner / outer diameter of 20 / 50 mm and a thickness of 25 mm. A 10 mm × 10 mm two-dimensional model is built in the simulation platform, with the upper edge set as the high potential input terminal and the lower edge set as the low potential terminal or ground terminal.

[0103] In a specific example, a 10mm × 10mm two-dimensional computational region can be established in the finite element simulation platform to represent a local cross-section of the carbon ceramic resistor along its thickness. The upper boundary of the two-dimensional computational region represents the high-potential input terminal, and the lower boundary represents the low-potential terminal or grounding terminal. To simulate the clamping and voltage loading effect of the electrode clamps on the resistor sample in actual impact tests, copper clamping regions can be set at the upper and lower ends of the two-dimensional model, for example, copper clamping regions with a width of 10mm and a height of 0.5mm can be set at the upper and lower ends respectively. The upper copper clamping region is used to receive the impact voltage input, and the lower copper clamping region is used for grounding or as a low-potential boundary, thereby forming a potential difference and current path along the thickness direction within the main body region of the carbon ceramic resistor.

[0104] After establishing the equivalent cross-sectional model, instead of directly setting the main resistive region as a homogeneous material region, the main resistive region is divided into blocks based on the carbon element distribution map. Specifically, local regions can be formed based on areas with similar carbon content in the carbon element distribution map, and each local region is converted into a polygonal microstructure block. Each polygonal microstructure block represents a local region inside the carbon ceramic resistor with similar carbon content and similar material properties, and the common boundary between adjacent polygonal microstructure blocks represents the contact interface or material transition interface between adjacent local regions.

[0105] For example, in a two-dimensional computational region, the main body of the resistor can be divided into multiple irregular polygonal blocks according to the carbon content, carbon interconnection status, and boundary changes in the carbon element distribution map. Each polygonal block represents a microscopic local region inside the carbon ceramic resistor. The common edge between polygonal blocks represents the interface or contact surface between adjacent local regions. The model size is set to 10 mm × 10 mm, and areas with a width of 10 mm and a height of 0.5 mm are set at the top and bottom ends to represent copper clamps. When modeling the resistor in COMSOL (COMSOL Multiphysics), two-dimensional geometry drawing is required first, the local blocks of the carbon ceramic resistor are divided based on the carbon element distribution map of the sample, and then two-dimensional modeling is performed in COMSOL according to this division, such as... Figure 3 As shown.

[0106] In this model, regions with high carbon content and interconnected structures can form potentially high-conductivity pathways, while regions with low carbon content can form relatively low-conductivity regions. This polygonal microstructure block representation method allows the complex carbon phase distribution within real materials to be transformed into a calculable, assignable, and solvable finite element partitioning model.

[0107] In some embodiments, based on the microstructure distribution information and measured electrical performance information corresponding to each microstructure block, material parameters are calibrated for each microstructure block to obtain a partitioned simulation model with heterogeneous conductivity distribution. This includes: sorting the conductivity levels of each microstructure block according to the carbon content of each microstructure block; determining the overall conductivity calibration range of the carbon ceramic resistor sample based on the rated resistance range of the carbon ceramic resistor sample; and configuring material parameters for microstructure blocks with different conductivity levels under the constraint of the overall conductivity calibration range, so that the conductivity of the microstructure block with higher carbon content is higher than that of the microstructure block with lower carbon content, thereby obtaining a partitioned simulation model with heterogeneous conductivity distribution.

[0108] In one implementation, multiple material grades can be set, for example, eight material groups with different material parameters. Each material group corresponds to a conductivity grade, and parameters such as conductivity, thermal conductivity, specific heat capacity, density, coefficient of thermal expansion, elastic modulus, and Poisson's ratio are configured for each. The clamping area can be made of copper to reflect the high conductivity and good thermal conductivity of copper electrode clamps. Each microstructure block in the resistor body area is matched to a corresponding material group according to its carbon content grade.

[0109] To ensure the overall electrical performance of the partitioned simulation model matches that of the actual sample, the overall conductivity can be calibrated based on the actual resistance range of the sample. For a coaxial cylindrical sample, the overall conductivity can be estimated according to the following relationship:

[0110] ;

[0111] Where σ is the overall conductivity of the carbon ceramic resistor sample, L is the sample thickness, R is the actual resistance of the sample, D is the outer diameter of the sample, and d is the inner diameter of the sample. If the actual resistance of the sample ranges from 5.9Ω to 6.5Ω, the calibration range of the overall conductivity can be obtained according to the above formula. Under the constraint of this calibration range, the conductivity of each microstructure block can be adjusted to match the overall resistance of the model with the measured resistance range.

[0112] In one example, the pre-divided blocks are sorted by conductivity, based on their carbon content, such as... Figure 4 As shown in the figure, the conductivity from high to low is indicated by the numbers in the figure, and the remaining unlabeled parts are the blocks with the lowest conductivity.

[0113] Will Figure 4 The corresponding blocks are set to the appropriate materials, and the clamps on both sides are set to copper. In the simulation model, the low-voltage clamp is grounded, and the experimental circuit described in Chapter 2 is solved to obtain an approximate voltage function across the resistor sample. The voltage function at the potential terminal is set and injected into the simulation model through the copper clamp at the high-voltage terminal. To approximate the actual environment, the ambient temperature is set to 25 ℃. During energy injection, the resistor generates Joule heat as current flows through it, and its temperature rises. It exchanges energy with the outside world through radiation and convection. The computational domain of the model primarily uses a triangular mesh.

[0114] Considering the potential for low resistance fluctuations in carbon ceramic resistors under high voltage conditions, the conductivity of the high-carbon content region can be set to 4.8 S / m, and the conductivity of the low-carbon content region can be set to 1.1 S / m. Other conductivity levels can be set in between these two ranges according to carbon content, but must still meet the overall conductivity calibration range. In addition to conductivity, parameters such as thermal conductivity, specific heat capacity, density, coefficient of thermal expansion, and elastic modulus can be configured with reference to the parameter ranges of carbon ceramic materials or silicon carbide-based ceramic materials, and adjusted based on the actual sample material composition.

[0115] By constraining the material parameters of the partitions by the measured resistance range, model deviations caused by subjective assignment based solely on the carbon element distribution map can be avoided. By sorting the conductivity levels and classifying the material parameters, the partition simulation model can simultaneously meet the two requirements of consistent macroscopic electrical performance and expressible microscopic heterogeneity.

[0116] In some embodiments, an impact voltage input varying with time is established based on impact test conditions. This impact voltage input is applied to the high-potential boundary of the partitioned simulation model, and a thermo-electric-mechanical coupling simulation analysis is performed on the partitioned simulation model to obtain the current density field, temperature field, and stress field corresponding to each microstructure block under the initial impact. This includes: establishing a transient response model of an RLC series second-order circuit based on the equivalent resistance, equivalent inductance, and energy storage capacitance in the impact test conditions; and fitting the impact voltage waveform across the carbon ceramic resistor sample based on the RLC series second-order circuit transient response model to obtain the impact voltage varying with time. The voltage function is used as the impulse voltage input; the impulse voltage input is applied to the fixture region of the partitioned simulation model, and the low-potential fixture region is set as the ground boundary; based on the potential difference formed between the potentials at both ends of the fixture region, the potential distribution and current density field are solved in the partitioned simulation model; the Joule heat generation in each microstructure block is calculated based on the current density field; the temperature field in the partitioned simulation model is solved based on the Joule heat generation and the thermophysical parameters of each microstructure block; the thermal expansion response of each microstructure block is calculated based on the temperature field, and the stress field in the partitioned simulation model is solved based on the thermal expansion response.

[0117] The impulse voltage input is used to simulate the transient voltage applied across the carbon ceramic resistor sample during a high-energy pulse test. The impulse voltage waveform can be fitted using the transient response model of a second-order RLC series circuit.

[0118] In one example, the impulse voltage waveform is referenced to the solution of the differential equation of a second-order RLC series circuit, and can be set as follows:

[0119] ;

[0120] The impulse voltage waveform can be fitted using the transient response equation of a second-order RLC series circuit. The RLC circuit includes a resistor R, an inductor L, and a capacitor C. Specifically, the second-order RLC series circuit includes an equivalent resistance R, an equivalent inductance L, and a storage capacitor C. The equivalent resistance R can include the sample resistance of the carbon ceramic resistor and the additional equivalent resistance in the test circuit. The equivalent inductance L can be the equivalent inductance of the test circuit, and the storage capacitor C can be the storage capacitor in the test circuit.

[0121] L = 4×10 -5 H;

[0122] C = 15 × 10 -3 C;

[0123] The input impulse voltage waveform equation is:

[0124] ;

[0125] in, Let be the impulse voltage applied to the high potential boundary at time t. Here, 'a' represents the impulse voltage amplitude coefficient, and 'b' represents the attenuation coefficients determined by R, L, and C. In one example, when the impulse voltage amplitude is 1300V, the impulse voltage input can be represented in an approximate double-exponential form, for example, 'a' and 'b' represent the attenuation coefficients determined by R, L, and C. In one example, when the impulse voltage amplitude is 1300V, the impulse voltage input can be represented in an approximate double-exponential form, for example... The input waveform of the impulse voltage is Figure 5 As shown, the waveform is fitted to the experimental waveform using the transient response equation of the RLC circuit. This waveform effectively represents the transient characteristics of the impulse voltage gradually decaying after a rapid rise.

[0126] During the energy injection process, the resistance heats up. In the simulation, energy is exchanged with the outside through convection. The convection coefficient is set to 10, which corresponds to the natural convection environment under normal temperature and pressure, consistent with the open environment of the experimental platform. The following simulation will be performed on the sample using step voltage impact and continuous impact in the simulation software.

[0127] During the simulation loading process, an impulse voltage function is applied to the high-potential clamp region of the partitioned simulation model, while the low-potential clamp region is set as the ground boundary. This creates a potential difference along the thickness direction between the high-potential and low-potential clamp regions. The impulse current enters the main resistive region through the high-potential clamp region and then flows out through the low-potential clamp region, thus simulating the current loading path in an actual experiment.

[0128] By integrating the heat conduction equation and the thermoelectric coupling equation, this paper constructs a comprehensive simulation model to simulate the thermoelectric response behavior of carbon ceramic resistors under high-energy pulse impact. This model fully considers the coupling effect between current and heat within the material and can dynamically track current density distribution, temperature field evolution, and changes in material structure.

[0129] In thermoelectric coupling, the injection of current induces Joule heating, which diffuses to other parts of the material via the heat conduction equation. The thermoelectric coupling equation describes the effect of non-uniform current density distribution and local temperature variations on the thermal response of the resistance. By solving this equation, the temperature rise caused by the current and its feedback effect on the heat flow distribution within the material can be traced. The heat conduction equation describes how heat propagates within the material and models the thermal stress and thermal expansion effects in localized areas.

[0130] In solving for the electric field, the electric field strength and current density can be determined based on the potential distribution. If φ represents the electric potential, σ... e Let E represent the local conductivity, then the electric field strength E can be expressed as:

[0131] E=- φ;

[0132] The current density J can be expressed as:

[0133] J=σ e E = -σ e φ;

[0134] Where J represents the current density. Since different microstructure blocks have different conductivities, the current density in each microstructure block is not the same under the same applied voltage. Blocks with high conductivities are usually more likely to form high current density paths.

[0135] In the Joule heating calculation process, the local Joule heating amount Q can be expressed as:

[0136] ;

[0137] For global or approximate ensemble analysis, Q=I can also be used. 2 Rt estimates the Joule heat over a certain time period, where Q is the Joule heat, I is the current, R is the resistance, and t is the duration of current flow. Since Joule heat is related to the square of the current, regions with high current density may experience stronger local heat accumulation even with relatively low resistivity due to current concentration.

[0138] In solving the temperature field, the diffusion process of heat within the material can be described based on the heat conduction equation:

[0139] ;

[0140] Where ρm is the material density, Cp is the specific heat capacity, T is the temperature, t is the time, k is the thermal conductivity, and qJ is the Joule heat source term. To approximate a real open environment, the ambient temperature can be set to 25℃, and convective and radiative heat transfer conditions can be set at the outer boundary of the model. For example, the convective heat transfer boundary can be:

[0141] -q·n = h(T-Tamb);

[0142] Where q is the heat flux density, n is the boundary normal, h is the convective heat transfer coefficient, and Tamb is the ambient temperature. In one example, the convective heat transfer coefficient can be set to 10 to simulate a natural convection environment at ambient temperature and pressure.

[0143] Under high-temperature conditions, in addition to vibrational energy, higher-frequency electromagnetic radiation also participates in energy transfer; this process is called photon conduction. Based on the blackbody radiation theory, at temperature T, the radiant energy Er per unit volume can be calculated using the following formula:

[0144] ;

[0145] Radiation-related volumetric specific heat C r It can be written as:

[0146] ;

[0147] Where σ is the Stefan-Boltzmann constant, n is the refractive index, v is the speed of light, and ET is the radiant energy per unit surface area.

[0148] For dielectric solids like ceramics, phonon thermal conductivity can also be used to describe the heat transfer process caused by lattice vibrations, for example:

[0149] ;

[0150] Where, k w Let be the phonon thermal conductivity, c(ω) be the specific heat contribution corresponding to frequency ω, v(ω) be the corresponding lattice wave propagation velocity, and l(ω) be the attenuation length. These relationships illustrate that under high-energy pulse action, heat not only originates from Joule heating but also transfers within the material and between the material and its environment through conduction, convection, and radiation.

[0151] During the thermal expansion and stress field solution process, the thermal strain of each microstructure block can be calculated based on the temperature field results:

[0152] ε th =α(T-T0);

[0153] Where, ε thLet α be the thermal strain, α be the coefficient of thermal expansion, T be the local temperature, and T0 be the initial ambient temperature. Then, by combining the material's elastic modulus, Poisson's ratio, the constraint relationship between adjacent microstructure blocks, and the fixture boundary constraints, the equivalent stress, maximum principal stress, and stress concentration location of each microstructure block are solved. Since the temperature rise and material parameters differ among different microstructure blocks, the amount of thermal expansion will also differ, and the deformation incoordination between adjacent blocks will further lead to local stress concentration.

[0154] In some embodiments, determining failure risk blocks in carbon ceramic resistor samples based on current density field, temperature field, and stress field includes: using each microstructure block as an evaluation unit, extracting the peak current density, average current density, and high current density continuous path distribution information corresponding to each microstructure block from the current density field; determining current density concentration blocks based on the peak current density, average current density, and high current density continuous path distribution information, and determining Joule heat accumulation blocks based on the resistivity corresponding to the current density concentration blocks; and extracting the local maximum temperature, temperature rise rate, and temperature gradient corresponding to each microstructure block from the temperature field. Based on the duration of hot spots, and considering the local maximum temperature, temperature rise rate, temperature gradient, and hot spot duration, local hot spot blocks are identified within the Joule heat accumulation block. The thermal expansion response of each microstructure block is determined based on the temperature field, and the equivalent stress, maximum principal stress, and stress concentration location corresponding to each microstructure block are extracted using the stress field to identify stress concentration blocks caused by the thermal expansion response of local hot spot blocks. When the same microstructure block simultaneously belongs to both a local hot spot block and a stress concentration block, or when a local hot spot block and a stress concentration block have a spatial correlation at adjacent contact interfaces, the microstructure block is identified as a failure risk block.

[0155] Specifically, the peak current density, average current density, and distribution information of high-current-density continuous pathways for each microstructure block are first extracted from the current density field. If the current density of a certain block is significantly higher than that of the surrounding blocks, or if multiple adjacent blocks form a high-current-density continuous pathway that runs through the upper and lower potential boundaries, then that block or the continuous pathway is identified as a current density concentration block. Since local current density is closely related to carbon element distribution and conductivity level, this step can reveal the impact of carbon content differences on current transport paths.

[0156] For example, in a simulation result, during the energy injection process into a carbon ceramic resistor, the current density distribution during the simulation process is captured as follows: Figure 6 As shown, the highest current density can reach 82 A / cm². 2 However, in some areas the current density is only 12.2 A / cm². 2The maximum and minimum values ​​differ by approximately seven times. This result indicates that regions with higher carbon content are more likely to form high current density pathways due to their higher conductivity, while regions with lower carbon content may form current-passing or low current density regions due to their lower conductivity. Therefore, the current density field can be used to preliminarily determine the locations where local Joule heat accumulation may occur.

[0157] Uneven distribution of current density can induce a Joule heating effect. According to the formula... Because regions with higher current density have lower resistivity, although there is an inverse relationship between current and resistance, the square of the current term has a significant impact on heat generation, leading to greater heat accumulation in regions with higher current density. In other words, regions with higher current density generate more Joule heat, which means a higher concentration of heat and further promotes an increase in local temperature.

[0158] Therefore, based on the Joule heating calculations and temperature field results, local hotspot blocks are further identified within the current density concentration areas. Specifically, the local maximum temperature, temperature rise rate, temperature gradient, and hotspot duration corresponding to each microstructure block can be extracted from the temperature field. If a block not only has a high current density but also a high local temperature, a fast temperature rise rate, a large temperature gradient, or a long hotspot duration, then that block is identified as a local hotspot block.

[0159] In one example, under an energy injection condition of approximately 12 kJ, Joule heat accumulates in the carbon ceramic resistor over time, causing the maximum temperature to approach 250°C. During this process, heat accumulation and current density distribution exhibit a clear spatial correlation. Differences in carbon content lead to differences in conductivity, which in turn results in uneven current distribution. This uneven current distribution further causes uneven temperature rise, ultimately forming hotspots in localized areas. Local hotspot identification indicators can include: the difference between the local temperature and the surrounding area temperature, the degree to which the local temperature rise rate exceeds the average temperature rise rate, the magnitude of the local temperature gradient, the spatial overlap between the local hotspot and the high current density area, the duration of the local hotspot, and the peak temperature of the local hotspot.

[0160] To further analyze the evolution of temperature distribution, Figures 7a-7d The simulation results at different times are shown respectively. The temperature field distribution of ). According to Figure 8 As a result, with an energy injection of approximately 12 kJ, the Joule heat in the resistor accumulated over time, causing the temperature to rise continuously, reaching a maximum of nearly 250 °C. During this process, there was a strong correlation between heat accumulation and current density distribution. Differences in carbon phase content led to variations in conductivity, resulting in uneven current distribution, which in turn caused uneven heat distribution and temperature rise.

[0161] As the temperature in the localized area increases, the solid-state thermal expansion effect within the carbon ceramic resistor becomes more pronounced. The increased regional pressure from thermal expansion, coupled with a decrease in contact resistance, further enhances the formation of high-current-density pathways, leading to increased heat accumulation and temperature rise. This positive feedback mechanism causes a continuous increase in localized thermal stress, further exacerbating the degradation process of the resistor material. Long-term heat accumulation and current concentration not only cause ablation and melting of the localized structure but may also trigger resistor breakdown failure, severely impacting the performance stability of the carbon ceramic resistor.

[0162] Next, the thermal expansion response of each microstructure block is calculated based on the temperature field, and stress concentration blocks are determined in conjunction with the stress field. For example... Figure 9 As shown in the simulation results, the stress level inside the carbon ceramic resistor has reached [a certain value]. The stress is mainly distributed near areas with high resistivity, as indicated by the Pa value. This suggests that the localized high-resistivity regions experience significant thermal stress, and that the thermal expansion and contact resistance changes caused by temperature increases have a significant impact on the material's stability. However, it is worth noting that this simulation only reflects the thermal expansion effect of the material caused by temperature rise and the resulting change in contact resistance; it cannot fully reflect the irreversible damage caused when the applied energy exceeds the material's tolerance.

[0163] Specifically, when the energy input exceeds the material's tolerance limit, the stress caused by thermal expansion will no longer be limited to the reversible range. Irreversible damage such as plastic deformation, microstructural failure (e.g., carbon chain breakage, ceramic matrix crack propagation), or interface failure may occur in localized areas. These changes can lead to permanent breakage or thermal failure of conductive paths, further exacerbating local heat accumulation and current density concentration, creating a vicious cycle that ultimately leads to resistor breakdown or failure. Therefore, existing simulation models fail to consider irreversible damage to materials under extreme conditions, such as the breakage and ablation of conductive networks and localized melting of materials. Further model expansion is needed to incorporate effects such as mechanical damage, chemical reactions, and phase transitions to achieve a more comprehensive thermo-electric-mechanical coupling analysis and accurately assess the failure mechanism of materials under high-energy impacts.

[0164] If the temperature rise in a local hotspot causes its thermal expansion to be significantly greater than that of the surrounding hotspots, and the adjacent hotspots or fixture boundaries constrain its deformation, a local stress concentration will form at that hotspot or adjacent contact interface. The stress field results can include the equivalent stress distribution, the distribution of the maximum principal stress, the location of stress concentration, and the stress variation process over time.

[0165] When the same microstructural block simultaneously belongs to both a local hotspot block and a stress concentration block, or when a local hotspot block and a stress concentration block have a spatial correlation at adjacent contact interfaces, the corresponding microstructural block can be identified as a failure risk block. This spatial correlation can be understood as follows: the thermal expansion generated by the local hotspot block will transmit deformation constraints through adjacent interfaces, forming stress concentrations in adjacent high resistivity blocks, contact interface regions, or regions with abrupt changes in material parameters. Therefore, a failure risk block can be not only the hotspot itself, but also an interface block adjacent to the hotspot and subjected to significant thermal stress.

[0166] In some embodiments, when a failure risk block meets a preset ablation degradation criterion, the material parameters of the failure risk block are modified to obtain a degradation partitioning model, including: identifying the failure risk block that meets the ablation degradation criterion as an ablation degradation block; reducing the electrical conductivity of the ablation degradation block, and modifying at least one of the thermal conductivity, specific heat capacity, density, coefficient of thermal expansion, elastic modulus, and contact resistance of the ablation degradation block to characterize the changes in the conductive network, thermal conductivity, or mechanical properties after local ablation degradation; and writing the modified material parameters back into the partitioning simulation model to obtain a degradation partitioning model.

[0167] The criteria for ablation degradation may include one or more of the following: local maximum temperature exceeds a preset temperature threshold; local temperature rise rate exceeds a preset temperature rise rate threshold; local equivalent stress exceeds a material strength threshold; local energy density exceeds a material energy tolerance threshold; local current density continuously exceeds a preset current density threshold; local hot spot duration exceeds a preset time threshold; and local temperature gradient exceeds a preset temperature gradient threshold. When a failure risk block meets any one or a combination of the above conditions, it is identified as an ablation degradation block.

[0168] Ablation degradation is used to describe the irreversible damage that occurs in a localized area after a high-energy pulse impact. Ablation degradation may correspond to the following physical phenomena: breakage of the carbon phase conductive network, local carbon chain destruction, crack propagation in the ceramic matrix, local melting, interface debonding, increased porosity, altered contact state, and local structural damage to the material.

[0169] After identifying the ablation-damaged area, the material parameters of that area are adjusted. The adjusted parameters represent the state of structural damage or alteration of the conductive network in that region after the first impact. Specifically, the electrical conductivity of the ablation-damaged area can be reduced to indicate a decrease in conductivity due to conductive network disruption or carbon chain breakage; the thermal conductivity can be adjusted to indicate changes in thermal conductivity after material structural damage; the specific heat capacity can be adjusted to indicate changes in material phase or structural state; the density can be adjusted to indicate increased porosity or ablation loss; the coefficient of thermal expansion can be adjusted to indicate changes in material expansion properties after degradation; the contact resistance can be adjusted to indicate changes in local interface contact state; and the elastic modulus and strength parameters can be adjusted to indicate a decrease in material mechanical properties.

[0170] In one implementation, it can be assumed that the conductivity of the ablation-degraded region decreases significantly, and other material parameters are adjusted accordingly. The corrected material parameters are then written back into the original partition simulation model to obtain the degraded partition model. This degraded partition model is used to represent the state in which the local microstructure of a carbon ceramic resistor sample has undergone irreversible changes after the initial high-energy pulse impact.

[0171] In some embodiments, a second impact simulation is performed on the deteriorated partition model, and the high-energy pulse response evaluation results of the carbon ceramic resistor sample are output based on the difference between the initial impact simulation results and the second impact simulation results. This includes: applying the impact voltage input to the deteriorated partition model again under the same impact voltage condition as the initial impact, and performing thermo-electric-mechanical coupling simulation analysis to obtain the current density field, temperature field, and stress field under the second impact; comparing the current density field, temperature field, and stress field under the second impact with the current density field, temperature field, and stress field under the initial impact to determine the changes in current density distribution, temperature distribution, local hot spot changes, and stress concentration changes of the carbon ceramic resistor sample before and after ablation and deterioration; and outputting the changes in the conductive path, Joule heat accumulation, temperature uniformity, and material failure risk of the carbon ceramic resistor sample as the high-energy pulse response evaluation results based on the changes in current density distribution, temperature distribution, local hot spot changes, and stress concentration changes.

[0172] In one example, after localized ablation degradation, the maximum current surface density in the re-simulated data still reached over 80 A / cm², but the high current surface density region was significantly reduced, and the difference between the maximum and minimum current densities decreased from approximately 7 times before degradation to approximately 4 times. This indicates that the high current pathway changes after ablation degradation, the degree of local current accumulation decreases, the current density distribution tends to be more uniform, and the overall Joule heat accumulation effect is reduced.

[0173] Furthermore, by resimulating the degradation zone model at the same voltage level and extracting the temperature distribution at the same time, it was found that the highest temperature at the same time decreased by 13℃ and 20℃, respectively. Before degradation, the temperature difference between the highest and lowest temperatures at the corresponding time was 69.7℃ and 83℃, while after degradation, the temperature difference decreased to 55.2℃ and 56℃. This result indicates that the effect of local hot spots is weakened after ablation degradation, and the overall temperature distribution is more uniform. If the second impact needs to achieve the same temperature rise as the first impact, it may be necessary to increase the impact voltage or energy level, indicating that the conductive path and thermal response characteristics of the carbon ceramic resistor have changed after the first impact.

[0174] like Figure 10 As shown, the maximum current surface density in the re-simulation after the ablation and degradation phenomenon still reaches 80 A / cm. 2 However, the areas with high current surface density are significantly reduced, and the difference between the maximum and minimum current surface density has decreased from 7 times to 4 times. Comparing the current density distribution diagrams before degradation with the same voltage applied for the same duration, the current surface density distribution is more uniform after local block ablation degradation, and as shown in the diagram, the distribution area of ​​high current surface density is significantly reduced, theoretically leading to a decrease in the overall Joule heat accumulation effect.

[0175] Simulations were performed on the degraded resistor model at the same voltage level, and... Figure 8 and Figure 11 At the same moment, the highest temperature dropped by 20 ℃, indicating a significant decrease in the local hotspot effect caused by local heat accumulation. This aligns with the weakening of the local heat accumulation effect predicted by the significant reduction in high current surface density areas. Furthermore, the temperature difference between the highest and lowest temperatures at these two moments before degradation was 83 ℃, while after degradation, the difference was only 56 ℃, a significant decrease of 27 ℃ compared to before ablation degradation. This phenomenon suggests that after ablation degradation, not only does the local highest temperature decrease significantly, but the overall temperature distribution also becomes more uniform. In fact, a direct visual examination of the two sets of three-dimensional temperature rise graphs reveals that the latter set is noticeably smoother. In the simulation of a second impact at the same voltage (energy) level after the initial impact degradation, a decrease in the local highest temperature was observed. This indicates that to achieve the same temperature rise, it is necessary to increase the voltage (energy) level, thereby increasing the current surface density and thus enhancing local Joule heat accumulation and temperature rise.

[0176] By comparing the results of the initial impact simulation with those of the subsequent impact simulation, we can determine which microstructure regions in carbon ceramic resistors are prone to forming high current density paths, which regions are prone to forming local hot spots, which regions are prone to thermal stress concentration, and which regions may be the first to undergo ablation degradation. Furthermore, we can evaluate the impact of ablation degradation on conductive paths, Joule heat accumulation, temperature distribution uniformity, and material failure risk, thereby providing a basis for microstructure optimization, impact resistance improvement, and life assessment of carbon ceramic resistors.

[0177] Based on the same inventive concept, this application also provides a carbon ceramic resistor high-energy pulse physical field simulation system for implementing the carbon ceramic resistor high-energy pulse physical field simulation method mentioned above.

[0178] The solution provided by this system is similar to the solution described in the above method. Therefore, the specific limitations of one or more embodiments of the carbon ceramic resistor high-energy pulse physical field simulation system provided below can be found in the limitations of the carbon ceramic resistor high-energy pulse physical field simulation method above, and will not be repeated here.

[0179] like Figure 12 As shown, the present invention also provides a high-energy pulse physical field simulation system for carbon ceramic resistors, the system comprising:

[0180] The data acquisition module 100 is used to acquire the structural parameters, microstructure distribution information, measured electrical performance information and impact test conditions of the carbon ceramic resistor sample to be simulated.

[0181] The block division module 200 is used to establish the equivalent cross-sectional model corresponding to the carbon ceramic resistor sample based on the structural parameters, and to divide the main resistor region in the equivalent cross-sectional model into multiple microstructure blocks based on the microstructure distribution information.

[0182] The partitioned simulation module 300 is used to calibrate the material parameters of each microstructure block based on the microstructure distribution information and measured electrical performance information corresponding to each microstructure block, so as to obtain a partitioned simulation model with heterogeneous conductivity distribution.

[0183] The multiphysics simulation module 400 is used to establish the time-varying impact voltage input based on the impact test conditions, apply the impact voltage input to the high potential boundary of the partitioned simulation model, and perform thermo-electric-mechanical coupling simulation analysis on the partitioned simulation model to obtain the current density field, temperature field and stress field corresponding to each microstructure block under the initial impact.

[0184] The degradation partitioning determination module 500 is used to determine the failure risk blocks in the carbon ceramic resistor sample based on the current density field, temperature field and stress field, and to correct the material parameters of the failure risk blocks when the failure risk blocks meet the preset ablation degradation criteria, so as to obtain the degradation partitioning model.

[0185] The response evaluation module 600 is used to perform a second impact simulation on the deteriorated partition model, and output the high-energy pulse response evaluation results of the carbon ceramic resistor sample based on the difference between the initial impact simulation results and the second impact simulation results.

[0186] In some embodiments, the block partitioning module 200 is used for:

[0187] The geometry of the carbon ceramic resistor sample is determined based on its inner diameter, outer diameter, and thickness.

[0188] When the carbon ceramic resistor sample is a coaxial cylindrical structure and the impact current flows through the carbon ceramic resistor sample along the thickness direction, a local vertical section of the carbon ceramic resistor sample along the thickness direction is selected as the equivalent object, and the local vertical section is converted into a two-dimensional calculation area.

[0189] In the two-dimensional calculation region, a resistor body region is determined to represent the carbon ceramic resistor body, and clamping regions are set on opposite sides of the resistor body region along the thickness direction to obtain an equivalent cross-sectional model. The equivalent cross-sectional model is used to characterize the impact current transmission path of the carbon ceramic resistor sample in the thickness direction in the form of a two-dimensional cross-section, and the clamping regions are used to simulate the clamping and voltage loading effect of the electrode clamps on the carbon ceramic resistor sample in the impact test.

[0190] Based on the differences in carbon content distribution among the carbon ceramic resistor samples, the main body of the resistor is divided into blocks to obtain multiple local regions with different carbon content characteristics, and each local region is converted into a polygonal microstructure block.

[0191] In some embodiments, the partition simulation module 300 is used for:

[0192] Based on the relationship between the carbon content of each microstructure block, the electrical conductivity levels of each microstructure block are ranked.

[0193] Based on the rated resistance range of the carbon ceramic resistor sample, determine the overall conductivity calibration range of the carbon ceramic resistor sample.

[0194] Under the constraint of the overall conductivity calibration range, material parameters are configured for microstructure blocks with different conductivity levels, so that the conductivity of microstructure blocks with higher carbon content is higher than that of microstructure blocks with lower carbon content, thus obtaining a partitioned simulation model with heterogeneous conductivity distribution.

[0195] In some embodiments, the multiphysics simulation module 400 is used for:

[0196] Based on the equivalent resistance, equivalent inductance, and energy storage capacitance in the impact test conditions, a transient response model of an RLC series second-order circuit is established.

[0197] Based on the transient response model of RLC series second-order circuit, the impulse voltage waveform across the carbon ceramic resistor sample is fitted to obtain the impulse voltage function that varies with time, and the impulse voltage function is used as the impulse voltage input.

[0198] An impulse voltage input is applied to the fixture region of the partitioned simulation model, and the low-potential fixture region is set as the ground boundary;

[0199] Based on the potential difference formed between the potentials at both ends of the fixture region, the potential distribution and current density field are solved in the partitioned simulation model.

[0200] The amount of Joule heat generated in each microstructure block is calculated based on the current density field.

[0201] Based on the Joule heat generation and the thermal properties of each microstructure block, the temperature field in the partitioned simulation model is solved;

[0202] The thermal expansion response of each microstructure block is calculated based on the temperature field, and the stress field in the partitioned simulation model is solved based on the thermal expansion response.

[0203] In some embodiments, the degradation partition determination module 500 is used for:

[0204] Using each microstructure block as an evaluation unit, the peak current density, average current density, and high current density continuous path distribution information of each microstructure block are extracted from the current density field.

[0205] Based on the peak current density, average current density, and distribution information of high current density continuous paths, current density concentration blocks are identified, and Joule heat accumulation blocks are identified based on the resistivity corresponding to the current density concentration blocks.

[0206] The local maximum temperature, temperature rise rate, temperature gradient, and hot spot duration corresponding to each microstructure block are extracted from the temperature field. Based on the local maximum temperature, temperature rise rate, temperature gradient, and hot spot duration, local hot spot blocks are determined in the Joule thermal accumulation block.

[0207] The thermal expansion response of each microstructure block is determined based on the temperature field, and the equivalent stress, maximum principal stress and stress concentration location of each microstructure block are extracted by combining the stress field, so as to determine the stress concentration block caused by the thermal expansion response of the local hot spot block.

[0208] When the same microstructure block belongs to both a local hot spot block and a stress concentration block, or when the local hot spot block and the stress concentration block have a spatial relationship at adjacent contact interfaces, the microstructure block is identified as a failure risk block.

[0209] In some embodiments, the degradation partition determination module 500 is used for:

[0210] Failure risk blocks that meet the ablation degradation criteria are identified as ablation degradation blocks;

[0211] Reduce the electrical conductivity of the ablation-deteriorated block and modify at least one of the thermal conductivity, specific heat capacity, density, coefficient of thermal expansion, elastic modulus and contact resistance of the ablation-deteriorated block to characterize the changes in the conductive network, thermal conductivity or mechanical properties after local ablation-deterioration.

[0212] The corrected material parameters are written back into the partitioned simulation model to obtain the deteriorated partitioned model.

[0213] In some embodiments, the response evaluation module 600 is used for:

[0214] Under the same impact voltage condition as the initial impact, the impact voltage input was reapplied to the deterioration partition model, and a thermo-electric-mechanical coupling simulation analysis was performed to obtain the current density field, temperature field and stress field under the second impact.

[0215] The current density field, temperature field, and stress field under the second impact were compared with those under the first impact to determine the changes in current density distribution, temperature distribution, local hot spots, and stress concentration of the carbon ceramic resistor sample before and after ablation and degradation.

[0216] Based on changes in current density distribution, temperature distribution, local hot spots, and stress concentration, the changes in the conductive path, Joule heat accumulation, temperature uniformity, and material failure risk of the carbon ceramic resistor sample are output as the high-energy pulse response evaluation results.

[0217] like Figure 13 As shown, this application provides an electronic device. The electronic device 10 includes a memory 20 and a processor 30. The memory 20 stores a computer program. When the computer program is executed by the processor 30, the processor 30 performs the steps of the carbon ceramic resistor high-energy pulse physical field simulation method as described in the above embodiment.

[0218] This application provides a computer-readable storage medium storing a computer program thereon, which, when executed, implements the steps of the carbon ceramic resistor high-energy pulse physical field simulation method as described in the above embodiments.

[0219] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, electronic devices, and computer storage media described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0220] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design that is described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design. Specifically, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0221] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0222] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0223] In the embodiments provided by this invention, it should be understood that the disclosed systems, electronic devices, computer storage media, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection between devices or units through some interfaces, and may be electrical, mechanical, or other forms.

[0224] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0225] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0226] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for executing all or part of the steps of the methods described in the various embodiments of the present invention through a computer device (which may be a personal computer, a server, or a network device, etc.). The aforementioned storage medium includes: USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, optical disks, and other media capable of storing program code.

[0227] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for simulating the physical field of a high-energy pulse in a carbon ceramic resistor, characterized in that, The method includes: Obtain the structural parameters, microstructure distribution information, measured electrical performance information, and impact test conditions of the carbon ceramic resistor sample to be simulated; Based on the structural parameters, an equivalent cross-sectional model corresponding to the carbon ceramic resistor sample is established, and based on the microstructure distribution information, the main resistor region in the equivalent cross-sectional model is divided into multiple microstructure blocks; Based on the microstructure distribution information and measured electrical performance information corresponding to each microstructure block, the material parameters of each microstructure block are calibrated to obtain a partitioned simulation model with heterogeneous conductivity distribution. Based on the impact test conditions, a time-varying impact voltage input is established, and the impact voltage input is applied to the high potential boundary of the partitioned simulation model. The thermo-electric-mechanical coupling simulation analysis is performed on the partitioned simulation model to obtain the current density field, temperature field and stress field corresponding to each microstructure block under the initial impact. Based on the current density field, the temperature field, and the stress field, the failure risk blocks in the carbon ceramic resistor sample are determined, and when the failure risk blocks meet the preset ablation degradation criteria, the material parameters of the failure risk blocks are corrected to obtain a degradation partitioning model. The deteriorated partition model is subjected to a second impact simulation, and the high-energy pulse response evaluation results of the carbon ceramic resistor sample are output based on the difference between the initial impact simulation results and the second impact simulation results.

2. The high-energy pulse physical field simulation method for carbon ceramic resistors according to claim 1, characterized in that, The equivalent cross-sectional model corresponding to the carbon ceramic resistor sample is established based on the structural parameters, and the main resistor region in the equivalent cross-sectional model is divided into multiple microstructure blocks based on the microstructure distribution information, including: The geometry of the carbon ceramic resistor sample is determined based on its inner diameter, outer diameter, and thickness. When the carbon ceramic resistor sample is a coaxial cylindrical structure, and the impact current flows through the carbon ceramic resistor sample along the thickness direction, a local vertical section of the carbon ceramic resistor sample along the thickness direction is selected as the equivalent object, and the local vertical section is converted into a two-dimensional calculation region. In the two-dimensional calculation region, a resistor body region representing the carbon ceramic resistor body is determined, and clamping regions are respectively set on opposite sides of the resistor body region along the thickness direction to obtain the equivalent cross-sectional model; wherein, the equivalent cross-sectional model is used to characterize the impact current transmission path of the carbon ceramic resistor sample in the thickness direction in the form of a two-dimensional cross-section, and the clamping regions are used to simulate the clamping and voltage loading effect of the electrode clamps on the carbon ceramic resistor sample in the impact test; Based on the differences in carbon content distribution of the carbon ceramic resistor samples, the main body region of the resistor is divided into blocks to obtain multiple local regions with different carbon content characteristics, and each local region is converted into a polygonal microstructure block.

3. The high-energy pulse physical field simulation method for carbon ceramic resistors according to claim 1, characterized in that, The step involves calibrating the material parameters of each microstructure block based on its microstructure distribution information and measured electrical performance information, resulting in a partitioned simulation model with heterogeneous conductivity distribution. Based on the relationship between the carbon content of each microstructure block, the electrical conductivity levels of each microstructure block are sorted. Based on the rated resistance range of the carbon ceramic resistor sample, determine the overall conductivity calibration range of the carbon ceramic resistor sample; Under the constraint of the overall conductivity calibration range, material parameters are configured for microstructure blocks with different conductivity levels, so that the conductivity of microstructure blocks with higher carbon content is higher than that of microstructure blocks with lower carbon content, thus obtaining a partitioned simulation model with heterogeneous conductivity distribution.

4. The high-energy pulse physical field simulation method for carbon ceramic resistors according to claim 2, characterized in that, The impact voltage input, which varies with time according to the impact test conditions, is established and applied to the high-potential boundary of the partitioned simulation model. A thermo-electric-mechanical coupling simulation analysis is then performed on the partitioned simulation model to obtain the current density field, temperature field, and stress field corresponding to each microstructure block under the initial impact, including: Based on the equivalent resistance, equivalent inductance, and energy storage capacitor in the impact test conditions, a transient response model of an RLC series second-order circuit is established. Based on the transient response model of the RLC series second-order circuit, the impulse voltage waveform across the carbon ceramic resistor sample is fitted to obtain the impulse voltage function that varies with time, and the impulse voltage function is used as the impulse voltage input. The impulse voltage input is applied to the fixture region of the partitioned simulation model, and the low-potential fixture region is set as the ground boundary; Based on the potential difference formed between the potentials at both ends of the fixture region, the potential distribution and current density field are solved in the partitioned simulation model. The amount of Joule heat generated in each of the microstructure blocks is calculated based on the current density field. Based on the Joule heat generation and the thermal properties of each microstructure block, the temperature field in the partitioned simulation model is solved; The thermal expansion response of each microstructure block is calculated based on the temperature field, and the stress field in the partitioned simulation model is solved based on the thermal expansion response.

5. The high-energy pulse physical field simulation method for carbon ceramic resistors according to claim 1, characterized in that, The process of determining the failure risk blocks in the carbon ceramic resistor sample based on the current density field, the temperature field, and the stress field includes: Using each of the microstructure blocks as an evaluation unit, the peak current density, average current density, and high current density continuous path distribution information corresponding to each of the microstructure blocks are extracted from the current density field. Based on the current density peak value, the current density average value, and the high current density continuous path distribution information, current density concentration blocks are determined, and Joule heat accumulation blocks are determined based on the resistivity corresponding to the current density concentration blocks. The local maximum temperature, temperature rise rate, temperature gradient, and hot spot duration corresponding to each microstructure block are extracted from the temperature field, and local hot spot blocks are determined in the Joule heat accumulation block based on the local maximum temperature, the temperature rise rate, the temperature gradient, and the hot spot duration. The thermal expansion response of each microstructure block is determined based on the temperature field, and the equivalent stress, maximum principal stress and stress concentration location corresponding to each microstructure block are extracted by combining the stress field, thereby determining the stress concentration block caused by the thermal expansion response of the local hot spot block. When the same microstructure block belongs to both the local hot spot block and the stress concentration block, or when the local hot spot block and the stress concentration block have a spatial relationship at adjacent contact interfaces, the microstructure block is identified as the failure risk block.

6. The high-energy pulse physical field simulation method for carbon ceramic resistors according to claim 1, characterized in that, When the failure risk block meets the preset ablation degradation criterion, the material parameters of the failure risk block are modified to obtain a degradation partitioning model, including: The failure risk blocks that meet the above ablation degradation criteria are identified as ablation degradation blocks; The electrical conductivity of the ablation and degradation block is reduced, and at least one of the thermal conductivity, specific heat capacity, density, coefficient of thermal expansion, elastic modulus and contact resistance of the ablation and degradation block is corrected to characterize the changes in the conductive network, thermal conductivity or mechanical properties after local ablation and degradation. The corrected material parameters are written back into the partition simulation model to obtain the deteriorated partition model.

7. The high-energy pulse physical field simulation method for carbon ceramic resistors according to claim 1, characterized in that, The process of performing a second impact simulation on the deteriorated partition model, and outputting the high-energy pulse response evaluation results of the carbon ceramic resistor sample based on the difference between the initial impact simulation results and the second impact simulation results, includes: Under the same impact voltage condition as the initial impact, the degradation partition model is re-applied with the impact voltage input, and a thermo-electric-mechanical coupling simulation analysis is performed to obtain the current density field, temperature field and stress field under the second impact. The current density field, temperature field, and stress field under the second impact were compared with those under the first impact to determine the changes in current density distribution, temperature distribution, local hot spots, and stress concentration of the carbon ceramic resistor sample before and after ablation and degradation. Based on the changes in current density distribution, temperature distribution, local hot spots, and stress concentration, the changes in the conductivity path, Joule heat accumulation, temperature uniformity, and material failure risk of the carbon ceramic resistor sample are output as the evaluation results of the high-energy pulse response.

8. A high-energy pulsed physical field simulation system for carbon ceramic resistors, characterized in that, The system includes: The data acquisition module is used to acquire the structural parameters, microstructure distribution information, measured electrical performance information, and impact test conditions of the carbon ceramic resistor sample to be simulated. The block division module is used to establish an equivalent cross-sectional model corresponding to the carbon ceramic resistor sample based on the structural parameters, and to divide the main resistor region in the equivalent cross-sectional model into multiple microstructure blocks based on the microstructure distribution information. The partitioned simulation module is used to calibrate the material parameters of each microstructure block according to the microstructure distribution information and the measured electrical performance information, so as to obtain a partitioned simulation model with a heterogeneous conductivity distribution. The multiphysics simulation module is used to establish a time-varying impact voltage input based on the impact test conditions, apply the impact voltage input to the high potential boundary of the partitioned simulation model, and perform thermo-electric-mechanical coupling simulation analysis on the partitioned simulation model to obtain the current density field, temperature field and stress field corresponding to each microstructure block under the initial impact. The degradation partitioning determination module is used to determine the failure risk blocks in the carbon ceramic resistor sample based on the current density field, the temperature field and the stress field, and to correct the material parameters of the failure risk blocks when the failure risk blocks meet the preset ablation degradation criteria, so as to obtain the degradation partitioning model. The response evaluation module is used to perform a second impact simulation on the deteriorated partition model, and output the high-energy pulse response evaluation result of the carbon ceramic resistor sample based on the difference between the initial impact simulation result and the second impact simulation result.

9. An electronic device, characterized in that, The electronic device includes a memory and a processor. The memory stores a computer program. When the computer program is executed by the processor, the processor performs the steps of the carbon ceramic resistor high-energy pulse physical field simulation method as described in any one of claims 1-7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed, it implements the steps of the high-energy pulse physical field simulation method for carbon ceramic resistors as described in any one of claims 1-7.

Images